Pulse generation module, module group and pulse generation method based on high-voltage fast thyristor

Abstract

The invention discloses a pulse generation module based on a high-voltage fast thyristor, a module group and a pulse generation method, and solves the problems that a pulse generation module adopting an IGBT switch is low in single-tube power density, complex in synchronous control, easy to interfere and relatively complex in driving, and the pulse generation module specifically comprises a charging unit, a fast thyristor K, a driving circuit D, a PFN unit and an output unit; the charging unit comprises a charging port INA, a charging isolation diode DC, a charging port INB and a charging current-limiting resistor RC; the charging isolation diode DC and the charging current-limiting resistor RC are connected with the PFN unit through a fast thyristor K, and the fast thyristor K is also connected with a driving circuit D; the PFN unit comprises a PFN0, a PFN1 and a fly-wheel diode DS; the output unit comprises an output port OUTA and an output port OUTB; the output port OUTA is connected with the c end of the PFN1; and the output port OUTB is connected with the d end of the PFN0. Compared with an IGBT (Insulated Gate Bipolar Transistor), the high-voltage fast thyristor has the advantages of high single-tube power density, simplicity in driving, strong anti-interference capability and the like.

Description

Technical Field

[0001] The present invention relates to a pulse generation module, and particularly to a pulse generation module, a module and a pulse generation method based on a high-voltage fast thyristor. Background Art

[0002] In pulse power, switches are needed to achieve pulse compression and modulation. In high-power pulse generation devices, fast switch technologies mostly adopt gas switches. Gas switches have a short lifespan and poor stability. Implementing an ns-level synchronous synthesis system is complex and has poor practicability, and it is difficult to improve the overall volume power density. With the rapid development of semiconductor solid-state switch technologies, power semiconductor switches, such as insulated gate bipolar transistors (IGBTs) and thyristors, have gradually been applied to pulse generation modules. However, the pulse generation module with IGBT switches has a low single-tube power density, complex synchronous control, is vulnerable to interference, and has a complex drive, making it difficult to achieve large-scale modular applications, power superposition, or synthesis. Summary of the Invention

[0003] The object of the present invention is to provide a pulse generation module, a module and a pulse generation method based on a high-voltage fast thyristor to solve the technical problems that the pulse generation module with IGBT switches has a low single-tube power density, complex synchronous control, is vulnerable to interference, and has a complex drive, making it difficult to achieve large-scale modular applications, power superposition, or synthesis.

[0004] To achieve the above object, the present invention adopts the following technical solutions:

[0005] A pulse generation module based on a high-voltage fast thyristor, characterized in that:

[0006] It includes a charging unit, a fast thyristor K, a drive circuit D, a PFN unit, and an output unit;

[0007] The charging unit includes a charging port IN_A, a charging isolation diode D C , a charging port IN_B, and a charging current-limiting resistor R C ; the charging port IN_A is connected to the positive electrode of the charging isolation diode D C ; the charging isolation diode D C is used to isolate the discharge pulse to protect the charging power supply; the charging port IN_B is connected to one end of the charging current-limiting resistor R C ; the charging current-limiting resistor R C is used to prevent the charging current from being too large;

[0008] The fast thyristor K includes a high-voltage terminal K1, a trigger terminal K2, and a low-voltage terminal K3; its high-voltage terminal K1 is connected to the charging isolation diode D Cis connected to the negative electrode, its trigger terminal K2 is connected to the drive circuit D for providing an opening trigger signal, and its low-voltage terminal K3 is connected to the charging current-limiting resistor R C The other end is connected;

[0009] The PFN unit includes PFN_0, PFN_1 and a freewheeling diode D S ; The a terminal of the PFN_0 is connected to the high-voltage terminal K1 of the fast thyristor K, its b terminal is connected to the low-voltage terminal K3 of the fast thyristor K, its c terminal is connected to the d terminal of the PFN_1, and its d terminal is connected to the freewheeling diode D S is connected to the negative electrode; the c terminal of the PFN_1 is connected to the positive electrode of the freewheeling diode D S is connected;

[0010] The output unit includes an output port OUT_A and an output port OUT_B; the output port OUT_A is connected to the c terminal of the PFN_1; the output port OUT_B is connected to the d terminal of the PFN_0.

[0011] Further, the PFN_0 includes m sections of topological structure networks connected in series, m≥3; each section of the topological structure network includes a section capacitor C0 and two section inductors L0. One end of the two section inductors L0 is respectively connected to both ends of the section capacitor C0, and the other end of the two section inductors L0 is respectively connected to both ends of the section capacitor C0 of the adjacent section topological structure network; one end of the two section inductors L0 of the first section topological structure network is respectively the a terminal and the b terminal of the PFN_0, and the other end of the two section inductors L0 in the mth section topological structure network is respectively the c terminal and the d terminal of the PFN_0;

[0012] The PFN_1 includes m sections of topological structure networks connected in series. Each section of the topological structure network includes a section capacitor C1 and two section inductors L1. One end of the two section inductors L1 is respectively connected to both ends of the section capacitor C1, and the other end of the two section inductors L1 is respectively connected to both ends of the section capacitor C1 of the adjacent section topological structure network; one end of the two section inductors L1 of the first section topological structure network is respectively the c terminal and the d terminal of the PFN_1, and the other end of the two section inductors L1 in the mth section topological structure network is respectively the a terminal and the b terminal of the PFN_1.

[0013] Further, both the section capacitor C0 and the section capacitor C1 are high-voltage multilayer ceramic capacitors;

[0014] Both the section inductor L0 and the section inductor L1 are realized by PCB copper cladding;

[0015] The charging current-limiting resistor R C has a resistance value of 1 kΩ to 10 kΩ;

[0016] The fast thyristor K is a high-voltage and high-current solid-state pulse switch, and its trigger input high level is 24V;

[0017] The values of the section capacitors C0 and C1 are the same or different;

[0018] The values of the section inductors L0 and L1 are the same or different.

[0019] Furthermore, it further includes a printed circuit board PCB;

[0020] The printed circuit board PCB is a carrier for the charging unit, the fast thyristor K, the drive circuit D, the PFN unit, and the output unit, and its material is FR4.

[0021] A pulse generation module based on a high-voltage fast thyristor is characterized in that it includes N pulse generation modules based on high-voltage fast thyristors connected in series in sequence as described above, where N≥2;

[0022] The output port OUT_B of the previous pulse generation module is connected to the output port OUT_A of the next adjacent pulse generation module;

[0023] The output port OUT_A of the first pulse generation module and the output port OUT_B of the Nth pulse generation module are the output ports of this pulse generation module.

[0024] Furthermore, adjacent pulse generation modules are connected by a double-board connector S;

[0025] The material of the double-board connector S is a conductive metal, preferably copper;

[0026] One end of the double-board connector S is connected to the output port OUT_B of the previous pulse generation module, and the other end is connected to the output port OUT_A of the next adjacent pulse generation module.

[0027] A pulse generation module based on a high-voltage fast thyristor is characterized in that it includes K pulse generation modules based on high-voltage fast thyristors connected in parallel in sequence as described above, where K≥2;

[0028] The output port OUT_A of the previous pulse generation module is connected to the output port OUT_A of the next adjacent pulse generation module; the output port OUT_B of the previous pulse generation module is connected to the output port OUT_B of the next adjacent pulse generation module;

[0029] The output port OUT_A and the output port OUT_B of any one of the pulse generation modules are the output ports of this pulse generation module.

[0030] Furthermore, adjacent pulse generation modules are connected by two double-board connectors S;

[0031] One of the double-board connectors S is connected to the output port OUT_A of the previous pulse generation module at one end and to the output port OUT_A of the next adjacent pulse generation module at the other end; the other double-board connector S is connected to the output port OUT_B of the previous pulse generation module at one end and to the output port OUT_B of the next adjacent pulse generation module at the other end.

[0032] A pulse generation module based on a high-voltage fast thyristor is characterized in that it includes F pulse generation sub-modules connected in series in sequence, where F ≥ 2;

[0033] Each of the pulse generation sub-modules includes N pulse generation modules based on high-voltage fast thyristors connected in parallel in sequence as described above;

[0034] The output port OUT_A of the previous pulse generation module is connected to the output port OUT_A of the next adjacent pulse generation module; the output port OUT_B of the previous pulse generation module is connected to the output port OUT_B of the next adjacent pulse generation module; the output port OUT_A and the output port OUT_B of any one pulse generation module are the output ports of this pulse generation sub-module;

[0035] The output port OUT_A of the previous pulse generation sub-module is connected to the output port OUT_B of the next adjacent pulse generation sub-module;

[0036] The output port OUT_B of the first pulse generation sub-module and the output port OUT_A of the Fth pulse generation sub-module are the output ports of this pulse generation module.

[0037] A pulse generation method based on a high-voltage fast thyristor, using the above-mentioned pulse generation module based on a high-voltage fast thyristor, is characterized by including the following steps:

[0038] Step 1: The charging power supply charges the PFN unit to a preset voltage value Uin through the charging port IN_A, the charging port IN_B, and via the charging protection circuit C; where, PFN_0 directly forms a loop with the charging ports IN_A and IN_B, and PFN_1 forms a loop with the charging ports IN_A and IN_B directly after passing through the freewheeling diode D S and then.

[0039] Step 2: The drive circuit D controls the fast thyristor K to conduct, the voltage polarity of PFN_0 is reversed, and after being superimposed with PFN_1, a pulse with a voltage amplitude of Uout is generated between the output ports OUT_A and OUT_B; when the impedances of PFN_0 and PFN_1 match the load, Uout = Uin.

[0040] The beneficial effects of the present invention:

[0041] 1. A pulse generation module, module group and pulse generation method based on a high-voltage fast thyristor provided by the present invention. Compared with IGBTs, high-voltage fast thyristors have the advantages of high single-tube power density, simple drive, and strong anti-interference ability. They are easy to achieve large-scale modular applications, power superposition / synthesis, etc., and can achieve low-cost large-scale applications.

[0042] 2. The high-voltage large-current solid-state pulse switch of the present invention using fast thyristors has high di / dt performance, good switch synchronization under strong triggering, and also has the advantages of high peak power and strong anti-electromagnetic interference. It works stably and reliably in a harsh electromagnetic radiation environment. Through precise synchronization control, large-scale module synthesis can be achieved, with controllable consistency, stable operation, and long service life. It has irreplaceable advantages over traditional switches such as gas switches and hydrogen thyratrons. It is suitable for constructing a modular, high-power density, quasi-square wave electric pulse source with a pulse width of nearly 100 ns or wider.

[0043] 3. The pulse generation module provided by the present invention has scalability and flexibility in use, and can be realized by flexible series and parallel connections according to the voltage and current requirements of the actual output pulse. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 is a schematic structural diagram of Embodiment 1 of a pulse generation module based on a high-voltage fast thyristor of the present invention;

[0045] Figure 2 is a schematic diagram of the pins of the fast thyristor K in Embodiment 1 of the present invention;

[0046] Figure 3 is a schematic principle diagram of Embodiment 1 of a pulse generation module based on a high-voltage fast thyristor of the present invention;

[0047] Figure 4 is a schematic diagram of the networking of the PFN unit in the present invention, where (a) is a schematic diagram of the networking of PFN_0 and (b) is a schematic diagram of the networking of PFN_1;

[0048] Figure 5 is a schematic circuit structure diagram of Embodiment 1 of a pulse generation module based on a high-voltage fast thyristor of the present invention;

[0049] Figure 6 is a schematic structural diagram of Embodiment 2 of a pulse generation module group based on a high-voltage fast thyristor of the present invention, where (a) is a front side view and (b) is a rear side view;

[0050] Figure 7 is a schematic circuit structure diagram of Embodiment 2 of a pulse generation module group based on a high-voltage fast thyristor of the present invention;

[0051] Figure 8 FIG.

[0051] is a schematic structural diagram of the third embodiment of a pulse generation module based on a high-voltage fast thyristor of the present invention, where (a) is a front side view and (b) is a rear side view;

[0052] Figure 9 FIG. is a schematic circuit diagram of the third embodiment of a pulse generation module based on a high-voltage fast thyristor of the present invention;

[0053] Figure 10 FIG. is a schematic structural diagram of two in series and two in parallel of four printed circuit boards (PCBs) in the fourth embodiment of the present invention, where (a) is a front side view and (b) is a rear side view;

[0054] Figure 11 FIG. is a schematic circuit diagram of two in series and two in parallel of four printed circuit boards (PCBs) in the fourth embodiment of the present invention. Detailed Embodiments

[0055] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0056] Embodiment 1:

[0057] As Figure 1 shown, a pulse generation module based on a high-voltage fast thyristor provided in this embodiment includes a charging unit, a PFN unit, a fast thyristor K, a driving circuit D, an output unit, and a printed circuit board (PCB).

[0058] The charging unit includes a charging port IN_A, a charging port IN_B, and a charging protection circuit C, where the charging port IN_A and the charging port IN_B are connected to the charging protection circuit C; as Figure 3 shown, the charging protection circuit C consists of a charging isolation diode D C and a charging current-limiting resistor R C wherein the charging isolation diode D C is used to isolate the discharge pulse and protect the charging power supply, and its breakdown voltage needs to be designed according to the charging voltage. The charging current-limiting resistor R C is used to prevent the charging current to the PFN unit from being too large, and its resistance value is 1 kΩ - 10 kΩ.

[0059] The fast thyristor K is a high-voltage and high-current solid-state pulse switch, which has a higher withstand voltage value and current-carrying capacity, avoiding problems such as voltage sharing, current sharing, and reduction of output pulse quality caused by large-scale series and parallel connections; the trigger input high level of this high-voltage and high-current solid-state pulse switch is 24V, which is relatively common and simplifies the drive circuit; as Figure 2 shown, this high-voltage and high-current solid-state pulse switch has three electrode terminals, namely the high-voltage terminal K1, the trigger terminal K2, and the low-voltage terminal K3.

[0060] The drive circuit D is connected to the trigger terminal K2 of the fast thyristor K to provide an opening trigger signal for the fast thyristor K; the output unit includes an output port OUT_A and an output port OUT_B; the output port OUT_A is connected to the c terminal of PFN_1, and the output port OUT_B is connected to the d terminal of PFN_0.

[0061] The PFN unit consists of 1 PFN_0, 1 PFN_1, and a freewheeling diode D S and. As Figure 4 (a) of shows, where PFN_0 includes a 12-section topological structure network in which a plurality of section capacitors C0 and section inductors L0 are connected in series in sequence. Each section of the topological structure network includes a capacitor C0 and two inductors L0. One end of the two section inductors L0 is respectively connected to both ends of the section capacitor C0, and the other end of the two section inductors L0 is respectively connected to both ends of the section capacitor C0 of the adjacent section topological structure network; one end of the two section inductors L0 of the first section topological structure network is respectively the a terminal and the b terminal of PFN_0, and the other end of the two section inductors L0 in the 12th section topological structure network is respectively the c terminal and the d terminal of PFN_0; among them, the section capacitor C0 is a high-voltage multi-layer ceramic capacitor, and the section inductor L0 is realized by PCB copper cladding. Similarly, as Figure 4 (b) of shows, PFN_1 includes a 12-section topological structure network in which a plurality of section capacitors C1 and section inductors L1 are connected in series in sequence. Each section of the topological structure network includes a capacitor C1 and two inductors L1. One end of the two section inductors L1 is respectively connected to both ends of the section capacitor C1, and the other end of the two section inductors L1 is respectively connected to both ends of the section capacitor C1 of the adjacent section topological structure network; one end of the two section inductors L1 of the first section topological structure network is respectively the c terminal and the d terminal of PFN_1, and the other end of the two section inductors L1 in the 12th section topological structure network is respectively the a terminal and the b terminal of PFN_1. Among them, the section capacitor C1 is a high-voltage multi-layer ceramic capacitor, and the section inductor L1 is realized by PCB copper cladding. The values of the section capacitor C0, section inductor L0 in PFN_0, and the section capacitor C1 and section inductor L1 in PFN_1 can be different.

[0062] As Figure 5 shown, the a terminal of PFN_0 is connected to the high-voltage terminal K1 of the fast thyristor K, its b terminal is connected to the low-voltage terminal K3 of the fast thyristor K, its c terminal is connected to the d terminal of PFN_1, and its d terminal is connected to the freewheeling diode DS is connected to the negative electrode; the c terminal of PFN_1 is connected to the freewheeling diode D S is connected to the positive electrode. The reverse voltage withstand value and forward current-carrying capacity of the freewheeling diode D S need to be designed according to the output pulse voltage and current.

[0063] The printed circuit board PCB is the carrier of the above-mentioned pulse generation module. The connections between the above-mentioned units are all realized by wiring on the PCB, and its material is FR4.

[0064] The output pulse voltage Uout of the pulse generation module based on the high-voltage fast thyristor is equal to the charging voltage Uin, and Uout = 5 kV. Its output pulse width τ = 48 ns, and the matching impedance is Z = 4 Ω. The calculation is as follows:

[0065]

[0066]

[0067] To simplify this simulation, in this embodiment, L1 = L0 and C1 = C0. According to the formula calculation, it is obtained that: C1 = C0 = 1 nF, L1 = L0 = 2 nH. In this embodiment, the R in the charging protection circuit C C has a resistance value of 10 kΩ, and m is the number of sections of the PFN.

[0068] The specific implementation steps are as follows:

[0069] Step 1: The charging power supply passes through the charging port IN_A and the charging port IN_B, and charges the PFN unit to the preset voltage value of 5 kV through the charging protection circuit C;

[0070] Step 2: The drive circuit D controls the fast thyristor K to conduct. The voltage polarity of PFN_0 is reversed, and after being superimposed with PFN_1, a high-voltage pulse with a voltage amplitude of 5 kV and a pulse width of 48 ns is output between the output port OUT_A and the output port OUT_B.

[0071] Embodiment 2:

[0072] This embodiment provides a pulse generation module based on a high-voltage fast thyristor, including 2 pulse generation modules based on the high-voltage fast thyristor provided in Embodiment 1 connected in series in sequence. This pulse generation module improves the overall output pulse voltage by the way of module series connection.

[0073] Such as Figure 6As shown, in this embodiment, the printed circuit board (PCB) in one of the pulse generation modules is denoted as PCB1, and the PCB in the other pulse generation module is denoted as PCB2. PCB1 is placed upright, and PCB2 is placed upside down. The output port OUT_B of PCB1 is connected to the output port OUT_A of PCB2 through a double-board connector S. Then, the pulse output ports of this module are the output port OUT_A of PCB1 and the output port OUT_B of PCB2. The specific circuit structure is as Figure 7 shown.

[0074] Embodiment 3:

[0075] This embodiment provides another pulse generation module based on a high-voltage fast thyristor, which includes 2 pulse generation modules based on high-voltage fast thyristors provided in Embodiment 1 connected in parallel in sequence. This pulse generation module improves the overall output pulse current through the module parallel connection method.

[0076] Similarly, as Figure 8 shown, in this embodiment, the printed circuit board (PCB) in one of the pulse generation modules is denoted as PCB1, and the PCB in the other pulse generation module is denoted as PCB2. Both PCB1 and PCB2 are placed upright. The output port OUT_A of PCB1 is connected to the output port OUT_A of PCB2, and the output port OUT_B of PCB1 is connected to the output port OUT_B of PCB2 through a double-board connector S. The output ports of any pulse generation module in this pulse generation module are OUT_A and OUT_B, and the pulse output ports of this module. The circuit structure is as Figure 9 shown.

[0077] Embodiment 4:

[0078] Based on the series connection in Embodiment 2 and the parallel connection method in Embodiment 3 above, it can be flexibly adjusted according to the requirements of the output pulse voltage Uset and current Iset. To ensure the superposition efficiency of the output pulses after multi-module series-parallel connection, the synchronization accuracy Dn of each module drive circuit D is ≤ 1 ns. In this embodiment, the simulated output voltage of a single module is 5 kV, and the matching impedance is 4 Ω.

[0079] The output current Iout is:

[0080] I out = U out / Z

[0081] Calculated, we can get: Iout = 1.25 kA.

[0082] The simulated demand output pulse voltage Uset is 10 kV, and the output pulse current Iset is 2.5 kA. According to the calculation, four modules are required to be connected in two series and two parallel to achieve the output of a 10 kV, 2.5 kA pulse.

[0083] The four printed circuit boards PCB are connected in two series and two parallel as Figure 10 shown, and the implementation is carried out in the way of first parallel connection and then series connection; in this embodiment, the printed circuit boards PCB in the four pulse generation modules are respectively represented by PCB1, PCB2, PCB3 and PCB4.

[0084] Both PCB1 and PCB2 are placed in the positive direction. The output port OUT_A of PCB1 is connected to the output port OUT_A of PCB2, and the output port OUT_B of PCB1 is connected to the output port OUT_B of PCB2 through the double-board connector S; both PCB3 and PCB4 are placed in the inverted direction. The output port OUT_A of PCB3 is connected to the output port OUT_A of PCB4, and the output port OUT_B of PCB3 is connected to the output port OUT_B of PCB4 through the double-board connector S; the output port OUT_B of PCB2 is connected to the output port OUT_A of PCB3 through the double-board connector S. The pulse output ports after the four printed circuit boards PCB are connected in two series and two parallel are OUT_A of PCB1 and OUT_B of PCB4; the circuit structure of the four printed circuit boards PCB connected in two series and two parallel is as Figure 11 shown.

[0085] The specific implementation steps are as follows:

[0086] Step 1: The charging power supply charges the PFN units in each module to the preset voltage value of 5 kV through the charging ports IN_A and IN_B of PCB1, PCB2, PCB3 and PCB4 and through the charging protection circuit C.

[0087] Step 2: The drive circuit D in each module controls the corresponding fast thyristor K to conduct synchronously. The voltage polarity of PFN_0 on each printed circuit board PCB is reversed, and after being superimposed with the corresponding PFN_1, a high-voltage pulse of 5 kV / 1.25 kA is generated, and a high-voltage pulse of 10 kV / 2.5 kA is output after the four printed circuit boards PCB are connected in two series and two parallel.

[0088] As described above, it is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any change or replacement within the technical scope disclosed by the present invention should be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims

1. A pulse generation module based on a high-voltage fast thyristor, characterized in that: It includes a charging unit, a fast thyristor K, a drive circuit D, a PFN unit, and an output unit; The charging unit includes a charging port IN_A, a charging isolation diode D C , a charging port IN_B, and a charging current-limiting resistor R C ; the charging port IN_A is connected to the positive electrode of the charging isolation diode D C ; the charging isolation diode D C is used to isolate the discharge pulse to protect the charging power supply; the charging port IN_B is connected to one end of the charging current-limiting resistor R C ; the charging current-limiting resistor R C is used to prevent the charging current from being too large; The fast thyristor K includes a high-voltage terminal K1, a trigger terminal K2, and a low-voltage terminal K3; its high-voltage terminal K1 is connected to the negative electrode of the charging isolation diode D C ; its trigger terminal K2 is connected to the drive circuit D for providing an opening trigger signal, and its low-voltage terminal K3 is connected to the other end of the charging current-limiting resistor R C ; The PFN unit includes PFN_0, PFN_1 and a freewheeling diode D S ; The a terminal of PFN_0 is connected to the high-voltage terminal K1 of the fast thyristor K, its b terminal is connected to the low-voltage terminal K3 of the fast thyristor K, its c terminal is connected to the d terminal of PFN_1, and its d terminal is connected to the freewheeling diode D S 's negative electrode; The c terminal of PFN_1 is connected to the freewheeling diode D S 's positive electrode; The output unit includes an output port OUT_A and an output port OUT_B; the output port OUT_A is connected to the c terminal of PFN_1; the output port OUT_B is connected to the d terminal of PFN_0.

2. The pulse generation module based on a high-voltage fast thyristor according to claim 1, characterized in that: The PFN_0 includes m sections of topological structure networks connected in series in sequence, m≥3; each section of the topological structure network includes a section capacitor C0 and two section inductors L0. One end of the two section inductors L0 is respectively connected to both ends of the section capacitor C0, and the other end of the two section inductors L0 is respectively connected to both ends of the section capacitor C0 of the adjacent section topological structure network; one end of the two section inductors L0 of the first section topological structure network is respectively the a terminal and the b terminal of PFN_0, and the other end of the two section inductors L0 in the mth section topological structure network is respectively the c terminal and the d terminal of PFN_0; The PFN_1 includes m sections of topological structure networks connected in series in sequence. Each section of the topological structure network includes a section capacitor C1 and two section inductors L1. One end of the two section inductors L1 is respectively connected to both ends of the section capacitor C1, and the other end of the two section inductors L1 is respectively connected to both ends of the section capacitor C1 of the adjacent section topological structure network; one end of the two section inductors L1 of the first section topological structure network is respectively the c terminal and the d terminal of PFN_1, and the other end of the two section inductors L1 in the mth section topological structure network is respectively the a terminal and the b terminal of PFN_1.

3. The pulse generation module based on a high-voltage fast thyristor according to claim 2, characterized in that: Both the section capacitor C0 and the section capacitor C1 are high-voltage multi-layer ceramic capacitors; Both the section inductor L0 and the section inductor L1 are realized by PCB copper cladding; The charging current limiting resistor R C has a resistance value of 1 kΩ to 10 kΩ; The fast thyristor K is a high-voltage high-current solid-state pulse switch, and its trigger input high level is 24V; The values of the section capacitor C0 and the section capacitor C1 are different; The values of the section inductor L0 and the section inductor L1 are different.

4. The pulse generation module based on a high-voltage fast thyristor according to claim 3, characterized in that: It further includes a printed circuit board PCB; The printed circuit board PCB is a carrier for the charging unit, the fast thyristor K, the drive circuit D, the PFN unit, and the output unit, and its material is FR4.

5. A pulse generation module based on a high-voltage fast thyristor, characterized in that: It includes N pulse generation modules based on a high-voltage fast thyristor connected in series in sequence and as described in any one of claims 1-4, N≥2; The output port OUT_B of the previous pulse generation module is connected to the output port OUT_A of the next adjacent pulse generation module; The output port OUT_A of the first pulse generation module and the output port OUT_B of the Nth pulse generation module are the output ports of this pulse generation module group.

6. The pulse generation module group based on a high-voltage fast thyristor according to claim 5, characterized in that: Adjacent pulse generation modules are connected by a double-board connector S; The material of the double-board connector S is conductive metal; One end of the double-board connector S is connected to the output port OUT_B of the previous pulse generation module, and the other end is connected to the output port OUT_A of the next adjacent pulse generation module.

7. A pulse generation module based on a high-voltage fast thyristor, characterized in that: It includes K pulse generation modules based on high-voltage fast thyristors that are connected in parallel in sequence and as described in any one of claims 1-4, where K≥2; The output port OUT_A of the previous pulse generation module is connected to the output port OUT_A of the next adjacent pulse generation module; the output port OUT_B of the previous pulse generation module is connected to the output port OUT_B of the next adjacent pulse generation module; The output port OUT_A and the output port OUT_B of any one pulse generation module are the output ports of this pulse generation module group.

8. The pulse generation module group based on high-voltage fast thyristors according to claim 7, characterized in that: Adjacent pulse generation modules are connected by two double-board connectors S; One end of one of the double-board connectors S is connected to the output port OUT_A of the previous pulse generation module, and the other end is connected to the output port OUT_A of the next adjacent pulse generation module; one end of the other double-board connector S is connected to the output port OUT_B of the previous pulse generation module, and the other end is connected to the output port OUT_B of the next adjacent pulse generation module.

9. A pulse generation module based on a high-voltage fast thyristor, characterized in that: It includes F pulse generation sub-modules connected in series in sequence, where F≥2; Each of the pulse generation sub-modules includes N pulse generation modules based on high-voltage fast thyristors that are connected in parallel in sequence and as described in any one of claims 1-4; The output port OUT_A of the previous pulse generation module is connected to the output port OUT_A of the next adjacent pulse generation module; the output port OUT_B of the previous pulse generation module is connected to the output port OUT_B of the next adjacent pulse generation module; the output port OUT_A and the output port OUT_B of any one pulse generation module are the output ports of this pulse generation sub-module; The output port OUT_A of the previous pulse generation sub-module is connected to the output port OUT_B of the next adjacent pulse generation sub-module; The output port OUT_B of the first pulse generation sub-module and the output port OUT_A of the Fth pulse generation sub-module are the output ports of this pulse generation module group.

10. A pulse generation method based on a high-voltage fast thyristor, which uses the pulse generation module based on a high-voltage fast thyristor described in any one of claims 1-4, characterized in that, It includes the following steps: Step 1: The charging power supply charges the PFN unit to a preset voltage value Uin through the charging ports IN_A and IN_B and via the charging protection circuit C. Among them, PFN_0 directly forms a loop with the charging ports IN_A and IN_B, and PFN_1 forms a loop with the charging ports IN_A and IN_B directly after passing through the freewheeling diode D S ; Step 2: The drive circuit D controls the fast thyristor K to conduct, the voltage polarity of PFN_0 is reversed, and after being superimposed with PFN_1, a pulse with a voltage amplitude of Uout is generated between the output ports OUT_A and OUT_B.

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