Radio frequency front-end module, communication system and electronic equipment

Abstract

The invention provides a radio frequency front-end module, a communication system and communication equipment, and relates to the technical field of radio frequency front-ends, and the radio frequency front-end module comprises an amplification circuit and a matching circuit. The amplification circuit inputs a power supply voltage, inputs a first signal, and obtains a second signal based on the first signal. The matching circuit amplifies the second signal to form a target signal, the target signal is an output signal of the radio frequency front-end module, the matching circuit comprises a balun structure and an impedance matching adjusting unit, the balun structure comprises a primary winding and a secondary winding, the primary winding is electrically connected with the amplifying circuit, and the primary winding is also grounded; the secondary winding is electrically connected with the impedance matching adjusting unit, and the secondary winding is also electrically connected with the output end through the impedance matching adjusting unit. The radio frequency front-end module can adapt to different power supply voltages based on the capacitance value of the impedance matching adjusting unit, and the power supply voltage is inversely proportional to the capacitance value of the impedance matching adjusting unit, so that the power supply voltage of the radio frequency front-end module can be regulated and controlled.

Description

Technical Field

[0001] The present application relates to the technical field of radio frequency front-ends, and particularly to a radio frequency front-end module, a communication system, and an electronic device. Background Art

[0002] The radio frequency front-end plays a very important role in the field of wireless communication and is an important component of wireless communication devices. In a communication device, the power supply of a traditional radio frequency front-end is to boost the standard voltage of a PMIC (Power Management IC) to a required high voltage (such as 3.4V, etc.) through a boost power supply (also known as a bulk power supply) to meet the high output power requirements of the radio frequency front-end module.

[0003] However, nowadays, in order to reduce costs, the bulk power supply is omitted. For example, directly supplying power to the radio frequency front-end with a 3.4V voltage to support high-power output has become a relatively novel approach. But this also results in that the radio frequency front-end can only be applicable to a set voltage (such as 3.4V), and cannot be applicable to application scenarios of other voltages, thereby leading to poor compatibility of the radio frequency front-end. Different communication devices need to be separately designed and developed with corresponding radio frequency front-ends, which also makes the design and development of communication devices more complicated. Summary of the Invention

[0004] In view of this, the present application provides a radio frequency front-end module, a communication system, and a communication device, and the solutions are as follows:

[0005] A radio frequency front-end module includes:

[0006] An amplifying circuit, the amplifying circuit inputs a power supply voltage, and the power supply voltage supplies power to the radio frequency front-end module; the amplifying circuit is also electrically connected to an input end, inputs a first signal, and obtains a second signal based on the first signal;

[0007] A matching circuit, the matching circuit amplifies the second signal to form a target signal, and the target signal is the output signal of the radio frequency front-end module;

[0008] The matching circuit includes a balun structure and an impedance matching adjustment unit. The balun structure includes a primary winding and a secondary winding. The primary winding is electrically connected to the amplifying circuit, the primary winding is also grounded, the secondary winding is electrically connected to the impedance matching adjustment unit, and the secondary winding is also electrically connected to an output end through the impedance matching adjustment unit; the input end and the output end are respectively the input end and the output end of the radio frequency front-end module;

[0009] Wherein, the RF front-end module adapts different supply voltages based on the capacitance value of the impedance matching adjustment unit, and the supply voltage adapted by the RF front-end module is inversely proportional to the capacitance value of the impedance matching adjustment unit.

[0010] Optionally, the amplification circuit includes a first transistor and a second transistor, the input end includes a first input end and a second input end, and the first signal includes a first sub-signal and a second sub-signal;

[0011] The first end of the first transistor is electrically connected to the first input end for inputting the first sub-signal, the second end of the first transistor inputs the supply voltage adapted by the RF front-end module, the second end of the first transistor is also electrically connected to one end of the primary winding, and the third end of the first transistor is grounded;

[0012] The first end of the second transistor is electrically connected to the second input end for inputting the second sub-signal, the second end of the second transistor inputs the supply voltage adapted by the RF front-end module, the second end of the second transistor is also electrically connected to the other end of the primary winding, and the third end of the second transistor is grounded.

[0013] Optionally, the impedance matching adjustment unit includes at least one first capacitor and at least one second capacitor, and at least one first switch corresponding to the first capacitor and at least one second switch corresponding to the second capacitor;

[0014] The first end of the secondary winding is electrically connected to the output end, the first plate of the first capacitor is electrically connected to the first end of the secondary winding, and the first plate of the first capacitor is also electrically connected to the output end, the second plate of the first capacitor is electrically connected to the first switch, and the first switch is grounded;

[0015] The first plate of the second capacitor is electrically connected to the second end of the secondary winding, the second plate of the second capacitor is electrically connected to the second switch, and the second switch is grounded;

[0016] The impedance matching adjustment unit changes its capacitance value based on the opening and closing of the first switch and the second switch.

[0017] Optionally, the impedance matching adjustment unit includes a first capacitor and a second capacitor, and a first switch corresponding to the first capacitor and a second switch corresponding to the second capacitor;

[0018] The first switch and the second switch are open, the capacitance value of the impedance matching adjustment unit is a first capacitance value, and the power supply voltage adapted by the RF front-end module is a first voltage value; one of the first switch and the second switch is open and the other is closed, the capacitance value of the impedance matching adjustment unit is a second capacitance value, and the power supply voltage adapted by the RF front-end module is a second voltage value; the first switch and the second switch are closed, the capacitance value of the impedance matching adjustment unit is a third capacitance value, and the power supply voltage adapted by the RF front-end module is a third voltage value;

[0019] Among them, the first capacitance value is greater than the second capacitance value, the second capacitance value is greater than the third capacitance value, the first voltage value is less than the second voltage value, and the second voltage value is less than the third voltage value.

[0020] Optionally, the impedance matching adjustment unit includes at least two first capacitors and at least two second capacitors, and at least two first switches corresponding to the first capacitors one by one, and at least two second switches corresponding to the second capacitors one by one;

[0021] The first switch and the second switch are open, the capacitance value of the impedance matching adjustment unit is a fourth capacitance value, and the power supply voltage adapted by the RF front-end module is a fourth voltage value; at least one of the at least two first switches is closed, and at least one of the at least two second switches is closed, the capacitance value of the impedance matching adjustment unit is a fifth capacitance value, and the power supply voltage adapted by the RF front-end module is a fifth voltage value;

[0022] Among them, the fourth capacitance value is greater than the fourth capacitance value, the fourth voltage value is less than the fifth voltage value, and the fifth voltage value increases as the number of closed first switches and second switches increases.

[0023] Optionally, the impedance matching adjustment unit includes at least one third capacitor and at least one fourth capacitor, and the third capacitor and the fourth capacitor are adjustable capacitors with adjustable capacitance values;

[0024] The first end of the secondary winding is electrically connected to the output end, the first electrode plate of the third capacitor is electrically connected to the first end of the secondary winding, and the first electrode plate of the third capacitor is also electrically connected to the output end, and the second electrode plate of the third capacitor is grounded;

[0025] The first electrode plate of the fourth capacitor is electrically connected to the second end of the secondary winding, and the second electrode plate of the fourth capacitor is grounded;

[0026] The capacitance value of the impedance matching adjustment unit changes based on the capacitance values of the third capacitor and the fourth capacitor.

[0027] Optionally, the first transistor is a heterojunction bipolar transistor, and the second transistor is a heterojunction bipolar transistor;

[0028] The base of the first transistor is electrically connected to the first input terminal, the collector of the first transistor inputs the supply voltage adapted to the RF front-end module, the collector of the first transistor is also electrically connected to one end of the primary winding, and the emitter of the first transistor is grounded;

[0029] The base of the second transistor is electrically connected to the second input terminal, the collector of the second transistor inputs the supply voltage adapted to the RF front-end module, the collector of the second transistor is also electrically connected to the other end of the primary winding, and the emitter of the second transistor is grounded.

[0030] Optionally, the amplifier circuit further includes a first inductor, a second inductor, a fifth capacitor, and a sixth capacitor;

[0031] The first inductor is located between the first transistor and the first node, one end of the first inductor is electrically connected to the second terminal of the first transistor, and the other end of the first inductor is electrically connected to the first node;

[0032] The second inductor is located between the second transistor and the first node, one end of the second inductor is electrically connected to the second terminal of the second transistor, and the other end of the second inductor is electrically connected to the first node; the second terminals of the first transistor and the second transistor input the supply voltage adapted to the RF front-end module through the first node;

[0033] The fifth capacitor is located between the first transistor and the primary winding, the first plate of the fifth capacitor is electrically connected to the second terminal of the first transistor, and the second plate of the fifth capacitor is electrically connected to the primary winding;

[0034] The sixth capacitor is located between the second transistor and the primary winding, the first plate of the sixth capacitor is electrically connected to the second terminal of the second transistor, and the second plate of the sixth capacitor is electrically connected to the primary winding.

[0035] A communication system includes the RF front-end module described in any one of the above.

[0036] A communication device includes the above communication system.

[0037] Compared with the related art, the beneficial effects of the technical solution of the present application are as follows:

[0038] The RF front-end module includes: an amplifying circuit and a matching circuit. The amplifying circuit inputs a supply voltage and a first signal, and obtains a second signal based on the first signal. The matching circuit amplifies the second signal to form a target signal, which is the output signal of the RF front-end module. The matching circuit includes a balun structure and an impedance matching adjustment unit. The balun structure includes a primary winding and a secondary winding. The primary winding is electrically connected to the amplifying circuit and is also grounded. The secondary winding is electrically connected to the impedance matching adjustment unit, and the secondary winding is also electrically connected to the output terminal through the impedance matching adjustment unit. Among them, the RF front-end module can adapt to different supply voltages based on the capacitance value of the impedance matching adjustment unit, and the supply voltage adapted by the RF front-end module is inversely proportional to the capacitance value of the impedance matching adjustment unit. It can be seen that the RF front-end module can adapt to different supply voltages by changing the capacitance value of the impedance matching adjustment unit. That is to say, the supply voltage adapted by the RF front-end module can be regulated, so that the RF front-end module can match multiple voltage environments, that is, the RF front-end module can be applied to different communication devices, greatly simplifying the research and design of communication devices. At the same time, for users of the RF front-end module, it also greatly simplifies material control and has strong practical value. Description of the Drawings

[0039] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained according to the provided drawings.

[0040] The structures, ratios, sizes, etc. shown in the drawings of this specification are only used to cooperate with the content disclosed in the specification for those who are familiar with this technology to understand and read, and are not used to limit the limited conditions that can be implemented by the present application. Therefore, they do not have technical substance. Any modification of the structure, change of the proportional relationship, or adjustment of the size, without affecting the effects that the present application can produce and the purposes that can be achieved, should still fall within the scope that can be covered by the technical content disclosed in the present application.

[0041] Figure 1 It is a schematic circuit diagram of a RF front-end module provided by the present application;

[0042] Figure 2 It is another schematic circuit diagram of a RF front-end module provided by the present application;

[0043] Figure 3 It is a comparison diagram of the switch states of the first switch and the second switch and the supply voltage;

[0044] Figure 4It is a comparison diagram of the power supply voltage and the impedance at the output end of the amplifier circuit;

[0045] Figure 5 It is a schematic circuit diagram of another radio frequency front-end module provided by the present application;

[0046] Figure 6 It is a schematic circuit diagram of another radio frequency front-end module provided by the present application. Specific embodiments

[0047] Next, the embodiments in the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without making creative efforts belong to the scope of protection of the present application.

[0048] To make the above objects, features, and advantages of the present application more obvious and understandable, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0049] As described in the background art section, although directly powering the radio frequency module with a 3.4V voltage can save one bulk power supply and thus reduce costs, it also results in poor compatibility of the radio frequency front-end, which in turn makes the design and development of communication devices more complex.

[0050] For example, when directly powering the radio frequency front-end with a 3.4V voltage, this radio frequency front-end cannot be applied to low-voltage platforms such as mobile phones, and similarly cannot be applied to high-voltage platforms such as the Internet of Things platform. A corresponding radio frequency front-end needs to be designed separately, resulting in more complex design and development of communication devices.

[0051] Based on the above, the present application provides a radio frequency front-end module, as Figure 1 shown Figure 1 It is a schematic circuit diagram of a radio frequency front-end module provided by the present application. The radio frequency front-end module includes:

[0052] An amplifier circuit PA, the amplifier circuit PA inputs a power supply voltage VCC, and the power supply voltage VCC powers the radio frequency front-end module. The amplifier circuit PA is also electrically connected to the input end RFin, inputs a first signal, and obtains a second signal based on the first signal, that is, the amplifier circuit PA can amplify the first signal and then obtain the second signal.

[0053] The matching circuit 100 amplifies the second signal to form a target signal, which is the output signal of the RF front-end module. Specifically, after the RF front-end module inputs the first signal, the input signal is processed by the amplifier circuit PA and the matching circuit 100 in sequence to obtain the target signal, and the target signal is output.

[0054] The above-mentioned matching circuit 100 includes a balun structure 110 and an impedance matching adjustment unit 120. The balun structure 110 includes a primary winding 111 and a secondary winding 112. The primary winding 111 is electrically connected to the amplifier circuit PA, and the primary winding 111 is also grounded. The secondary winding 112 is electrically connected to the impedance matching adjustment unit 120, and the secondary winding 112 is also electrically connected to the output terminal RF-out through the impedance matching adjustment unit 120. It should be noted that the above input terminal RFin and output terminal RF-out are the input terminal and output terminal of the RF front-end module respectively.

[0055] It should be noted that the RF front-end module provided in this application can adapt to different supply voltages VCC based on the capacitance value of the impedance matching adjustment unit 120, and the supply voltage VCC adapted by the RF front-end module is inversely proportional to the capacitance value of the impedance matching adjustment unit 120. Among them, the supply voltage VCC adapted by the above-mentioned RF front-end module can be provided to the RF front-end module by electrically connecting an external power supply or the like.

[0056] As can be seen from the above, the impedance matching adjustment unit 120 is connected to one side of the secondary winding 112 of the balun structure 110. Therefore, when the capacitance value of the impedance matching adjustment unit 120 changes, the impedance on the side where the primary winding 111 of the matching circuit 100 is located remains unchanged, while the impedance on the side where the secondary winding 112 and the impedance matching adjustment unit 120 are located changes, which changes the impedance matching between the input terminal and the output terminal of the balun structure 110, and can be equivalent to a change in the turns ratio of the primary winding 111 and the secondary winding 112 of the balun structure 110. Furthermore, this leads to a change in the amplification factor of the matching circuit 100 for the second signal.

[0057] It should be noted that the power of the target signal is usually a known target value, and thus the impedance of the target signal is also a known value, which is determined by the power value of the target signal. Therefore, when the amplification factor of the matching circuit 100 for the second signal changes due to the capacitance value change of the impedance matching adjustment unit 120, for example, when the amplification factor of the matching circuit 100 for the second signal becomes larger due to the capacitance value change of the impedance matching adjustment unit 120, that is, when the amplification ability of the matching circuit 100 for the second signal is stronger, then the power of the second signal can be smaller, and the impedance of the second signal can be smaller. The target signal can be obtained by amplifying the above-mentioned smaller second signal through the matching circuit 100 with stronger amplification ability. When the power of the second signal can be smaller, the difference between the first signal and the second signal can be smaller, so that the amplification ability of the amplifier circuit PA can be smaller. Since the amplification ability of the amplifier circuit PA is related to its voltage value, the voltage value of the amplifier circuit PA can be smaller, that is, at this time, the RF front-end module can be adapted to a lower supply voltage VCC.

[0058] Similarly, when the amplification factor of the matching circuit 100 for the second signal becomes smaller due to the capacitance value change of the impedance matching adjustment unit 120, that is, when the amplification ability of the matching circuit 100 for the second signal is weaker, then the power of the second signal needs to be larger, and the impedance of the second signal is larger, so that the matching circuit 100 can amplify the second signal to obtain the above-mentioned target signal. When the power of the second signal is larger, the difference between the first signal and the second signal is also larger, and the amplifier circuit PA needs to amplify the first signal to a greater extent, so that the voltage value of the amplifier circuit PA is required to be larger. At this time, the RF front-end module can be adapted to a higher supply voltage VCC.

[0059] Based on the above, the RF front-end module provided by the present application can change the amplification ability of the matching circuit 100 for the second signal by changing the capacitance value of the impedance matching adjustment unit 120, and further the supply voltage VCC of the RF front-end module. That is to say, the supply voltage VCC adapted by the RF front-end module can be regulated. Thus, the RF front-end module can match multiple voltage environments, that is, the RF front-end module can be applied to different communication devices, greatly simplifying the research and design of communication devices. At the same time, for users of the RF front-end module, it also greatly simplifies material management and has strong practical value.

[0060] It should be noted that the change in the amplification ability of the above-mentioned matching circuit 100 specifically means that the amplification ability of the matching circuit 100 changes on the basis of the amplification ability of the balun structure 110. For example, it becomes larger on the basis of the amplification ability of the balun structure 110, or becomes smaller on the basis of the amplification ability of the balun structure 110, or the amplification ability of the balun structure 110 is equal to the amplification ability of the matching circuit 100.

[0061] In one embodiment of the present application, as Figure 1 shown, the amplifier circuit PA can be a differential amplifier circuit. The amplifier circuit PA can include a first transistor PA-P and a second transistor PA-N. The input terminal RFin includes a first input terminal RFin-P and a second input terminal RFin-N. The first signal includes a first sub-signal and a second sub-signal.

[0062] The first end of the first transistor PA-P is electrically connected to the first input terminal RFin-P for inputting the first sub-signal. The second end of the first transistor PA-P inputs the power supply voltage VCC adapted to the RF front-end module. The second end of the first transistor PA-P is also electrically connected to one end of the primary winding 111. The third end of the first transistor PA-P is grounded (not shown in the figure).

[0063] The first end of the second transistor PA-N is electrically connected to the second input terminal RFin-N for inputting the second sub-signal. The second end of the second transistor PA-N inputs the power supply voltage VCC adapted to the RF front-end module. The second end of the second transistor PA-N is also electrically connected to the other end of the primary winding 111. The third end of the second transistor PA-N is grounded (not shown in the figure).

[0064] As can be seen from the above, in a specific embodiment of the present application, the amplifier circuit PA can be a differential amplifier circuit, including two transistors, namely the first transistor PA-P and the second transistor PA-N. And these two transistors respectively input the power supply voltage VCC adapted to the RF front-end module to amplify the first signal to obtain a second signal. At the same time, these two transistors are also respectively electrically connected to both ends of the primary winding 111 to transmit the second signal to the matching circuit 100, so that the matching circuit 100 amplifies the second signal to obtain a target signal.

[0065] In one embodiment of the present application, as Figure 2 shown, Figure 2 is a schematic circuit diagram of a RF front-end module provided by the present application. The impedance matching adjustment unit 120 includes at least one first capacitor C1 and at least one second capacitor C2, and at least one first switch SW1 corresponding to the first capacitor C1, and at least one second switch SW2 corresponding to the second capacitor C2.

[0066] The first end of the secondary winding 112 is electrically connected to the output terminal RF-out. The first plate of the first capacitor C1 is electrically connected to the first end of the secondary winding 112, and the second plate of the first capacitor C1 is electrically connected to the first switch SW1, and the first switch SW1 is also grounded.

[0067] The first electrode of the second capacitor C2 is electrically connected to the second end of the secondary winding 112, and the second electrode of the second capacitor C2 is electrically connected to the second switch SW2, and the second switch SW2 is also grounded.

[0068] Wherein, the impedance matching adjustment unit 120 can change its capacitance value based on the opening and closing of the first switch SW1 and the second switch SW2, and further change the magnification of the matching circuit 100. It should be noted that the first end and the second end of the secondary winding 112 are respectively the two ends of the secondary winding 112.

[0069] Specifically, when the first switch SW1 is open, the capacitance value of the first capacitor C1 can be relatively large, or in other words, the capacitance value of the first capacitor C1 does not decrease, so that the impedance at the output end of the matching circuit 100 is larger. That is, the first capacitor C1 can participate in the impedance matching between the input end and the output end of the matching circuit 100, and further affect the magnification of the matching circuit 100, making the magnification of the matching circuit 100 relatively large. It should be noted that the input end of the matching circuit 100 refers to the side where the primary winding 111 of the balun structure 110 is located, and the output end refers to the side where the secondary winding 112 of the balun structure 110 is located. Then, when the first switch SW1 is open, the impedance matching of the balun structure 110 is changed, which is equivalent to the first capacitor C1 changing the turns ratio of the balun structure 110, and further changing the magnification of the matching circuit 100 for the second signal.

[0070] When the first switch SW1 is closed, the first capacitor C1 is grounded, and the capacitance value of the first capacitor C1 will be reduced to 0 due to grounding, so as not to affect the impedance at the output end of the matching circuit 100, and thus not participate in the impedance matching between the input end and the output end of the matching circuit 100, and the magnification of the matching circuit 100 is relatively small.

[0071] Similarly, when the second switch SW2 is open, the capacitance value of the second capacitor C2 is relatively large, and the magnification of the matching circuit 100 is relatively large. When the second switch SW2 is closed, the capacitance value of the second capacitor C2 is 0, and the magnification of the matching circuit 100 is relatively small.

[0072] In addition, the two ends of the secondary winding 112 of the radio frequency front-end module are respectively electrically connected to the first capacitor C1 and the second capacitor C2. Thus, the secondary winding 112 and the first capacitor C1 and the second capacitor C2 located at its two ends form a T-shaped impedance matching network, and further the bandwidth of the radio frequency front-end module can be wider, that is, the bandwidth of the radio frequency front-end module is improved, and the working performance of the radio frequency front-end module is improved. For example, the transmission speed can be faster and the anti-interference ability can be stronger, etc.

[0073] In an embodiment of the present application, as Figure 2As shown, the impedance matching adjustment unit 120 includes a first capacitor C1, a second capacitor C2, a first switch SW1 corresponding to the first capacitor C1, and a second switch SW2 corresponding to the second capacitor C2.

[0074] The first switch SW1 and the second switch SW2 are turned off. At this time, the capacitance value of the impedance matching adjustment unit 120 can be the first capacitance value. Based on the first capacitance value, the supply voltage VCC adapted by the RF front-end module can be the first voltage value. It should be noted that the capacitance value of the impedance matching adjustment unit 120 being the first capacitance value means that the capacitance value of the impedance matching adjustment unit 120 is the first capacitance value based on the capacitance values of the first capacitor C1 and the second capacitor C2.

[0075] One of the first switch SW1 and the second switch SW2 is turned off and the other is turned on, that is, the first switch SW1 is turned off and the second switch SW2 is turned on, or the first switch SW1 is turned on and the second switch SW2 is turned off. At this time, the capacitance value of the impedance matching adjustment unit 120 can be the second capacitance value. Based on the second capacitance value, the supply voltage VCC adapted by the RF front-end module can be the second voltage value.

[0076] The first switch SW1 and the second switch SW2 are turned on. The capacitance value of the impedance matching adjustment unit 120 can be the third capacitance value. Based on the third capacitance value, the supply voltage VCC adapted by the RF front-end module can be the third voltage value.

[0077] It should be noted that the first capacitance value is greater than the second capacitance value, the second capacitance value is greater than the third capacitance value, the first voltage value is less than the second voltage value, and the second voltage value is less than the third voltage value.

[0078] As can be seen from the above, the supply voltage VCC adapted by the RF front-end module provided in this application can be regulated based on the impedance matching adjustment unit 120, so that there can be multiple supply voltages VCC adapted by the RF front-end module. Therefore, when it is applied to a communication device, different supply voltages VCC can be adapted based on different requirements of the communication device, that is, the RF front-end module can match multiple communication devices, which has strong practicability.

[0079] Specifically, in an embodiment of this application, as Figure 3 and Figure 4 shown, Figure 3 is a comparison diagram of different states of the first switch SW1 and the second switch SW2 and the supply voltage VCC adapted by the RF front-end module. Figure 3 In it, ON represents that the switch is in the closed state, OFF represents that the switch is in the open state, Mode represents the supply voltage VCC adapted by the RF front-end module, that is, represents the working mode of the RF front-end module. According to Figure 3It can be known that the first voltage value can be 3.4V, the second voltage value can be 3.8V, and the third voltage value can be 4.5V. Figure 4 It is a comparison diagram of the supply voltage VCC adapted for the RF front-end module and the output impedance of the amplifier circuit PA. Figure 4 In it, the red line is the output impedance of the amplifier circuit PA when the supply voltage VCC adapted for the RF front-end module is 3.4V, the blue line is the output impedance of the amplifier circuit PA when the supply voltage VCC adapted for the RF front-end module is 3.8V, and the pink line is the output impedance of the amplifier circuit PA when the supply voltage VCC adapted for the RF front-end module is 4.5V. According to Figure 4 It can be known that the smaller the output impedance of the amplifier circuit PA, the larger the supply voltage VCC adapted for the RF front-end module. That is to say, the opening and closing of the first switch SW1 and the second switch SW2 can affect the capacitance value of the impedance matching adjustment unit 120, and further affect the amplification factor of the matching circuit 100. According to the different amplification factors of the matching circuit 100, the power of the second signal can be different, and the amplification factor of the amplifier circuit PA for the first signal can also be different, so that the voltage value of the amplifier circuit PA can also be different. Therefore, the supply voltage VCC adapted for the RF front-end module can be different, and the supply voltage VCC adapted for the RF front-end module is inversely proportional to the capacitance value of the impedance matching adjustment unit 120.

[0080] It should be noted that for the above, it can be understood that the output impedance of the balun structure 110 can be, for example, 50 ohms. When both the first switch SW1 and the second switch SW2 are open, the output impedance of the amplifier circuit PA can be, for example, 5 ohms. The input impedance of the balun structure 110 is the output impedance of the amplifier circuit PA, which is 5 ohms. At this time, the impedance matching on both sides of the input and output of the balun structure 110 is 1:10, and the amplification factor of the matching circuit 100 is 10 times. At this time, the amplification ability of the matching circuit 100 is relatively strong. When obtaining the target signal, it is not necessary for the amplifier circuit PA to amplify the first signal to a large extent, so that the supply voltage VCC adapted for the RF front-end module can be relatively low. When at least one of the first switch SW1 and the second switch SW2 is closed, the output impedance of the amplifier circuit PA will increase. For example, when one of the first switch SW1 and the second switch SW2 is closed, the output impedance of the amplifier circuit PA can be 10 ohms. At this time, the impedance matching on both sides of the input and output of the balun structure 110 is 1:5, and the amplification factor of the matching circuit 100 is 5 times. The amplification ability of the matching circuit 100 is relatively weak. In order to obtain the target signal, the amplifier circuit PA needs to amplify the second signal to a sufficient extent, so that the supply voltage VCC adapted for the RF front-end module needs to be relatively high.

[0081] In an embodiment of the present application, as Figure 5 shown Figure 5Schematic diagram of the circuit structure of a radio frequency front-end module provided by this application. The impedance matching adjustment unit 120 may include at least two first capacitors C1 and at least two second capacitors C2, and at least two first switches SW1 corresponding to the first capacitors C1 one by one, and at least two second switches SW2 corresponding to the second capacitors C2 one by one.

[0082] The first switch SW1 and the second switch SW2 are turned off, that is, at least two first switches SW1 and at least two second switches SW2 are both turned off. At this time, the capacitance value of the impedance matching adjustment unit 120 can be the fourth capacitance value, and the supply voltage VCC adapted by the radio frequency front-end module can be the fourth voltage value. At least one of the first switches SW1 in the first switch SW1 is closed, and at least one of the first switches SW2 in the second switch SW2 is closed. At this time, the capacitance value of the impedance matching adjustment unit 120 can be the fifth capacitance value, and the supply voltage VCC adapted by the radio frequency front-end module can be the fifth voltage value.

[0083] It should be noted that the fourth capacitance value is greater than the fifth capacitance value, the fourth voltage value is less than the fifth voltage value, and the fifth voltage value increases as the number of closed switches in the first switch and the second switch increases. The difference between this embodiment and the above embodiment is that the number of the first capacitor C1 and the second capacitor C2 in the impedance matching adjustment unit 120 can be multiple, so that the magnification of the matching circuit 100 can vary in a larger range based on the impedance matching adjustment unit 120, and the magnification of the matching circuit 100 can be more finely adjusted. Furthermore, the supply voltage VCC adapted by the radio frequency front-end module can be more finely adjusted to apply to more voltage scenarios, which has high practical value.

[0084] It should be noted that when the impedance matching adjustment unit 120 includes multiple first capacitors C1 and multiple second capacitors C2, the opening and closing of the first switch SW1 and the second switch SW2 do not affect each other. For example, when multiple first switches SW1 are all turned off or closed, multiple second switches SW2 can all be turned off, or all be closed, or at least one can be closed. Similarly, when multiple second switches SW2 are all turned off or closed, multiple first switches SW1 can all be turned off, or all be closed, or at least one can be closed, etc. There are multiple situations. In short, they do not affect each other. Specifically, according to actual needs, the opening and closing of the above multiple first switches SW1 and multiple second switches SW2 can be set. This application does not limit this.

[0085] In an embodiment of this application, as Figure 6 shown, Figure 6A schematic circuit diagram of a radio frequency front-end module provided by this application. The impedance matching adjustment unit 120 includes at least one third capacitor C3 and at least one fourth capacitor C4. The third capacitor C3 and the fourth capacitor C4 are adjustable capacitors with adjustable capacitance values.

[0086] The first end of the secondary winding 112 is electrically connected to the output terminal RF-out. The first electrode plate of the third capacitor C3 is electrically connected to the first end of the secondary winding 112, and the first electrode plate of the third capacitor C3 is also electrically connected to the output terminal RF-out. The second electrode plate of the third capacitor C3 is grounded.

[0087] The first electrode plate of the fourth capacitor C4 is electrically connected to the second end of the secondary winding 112. The second electrode plate of the fourth capacitor C4 is grounded.

[0088] It should be noted that the capacitance value of the impedance matching adjustment unit 120 changes based on the capacitance values of the third capacitor C3 and the fourth capacitor C4.

[0089] The difference between this embodiment and the above embodiment is that the third capacitor C3 and the fourth capacitor C4 are capacitors with adjustable capacitance values. Instead of changing the capacitance value of the impedance matching adjustment unit 120 by disconnecting and combining switches, it is achieved by directly changing the capacitance values of the third capacitor C3 and the fourth capacitor C4. However, the specific working principle of changing the supply voltage VCC adapted by the radio frequency front-end module is the same as that of the above embodiment and will not be elaborated here.

[0090] Similarly, both ends of the secondary winding 112 of the radio frequency front-end module are also electrically connected to the third capacitor C3 and the fourth capacitor C4 respectively. Thus, the secondary winding 112 and the third capacitor C3 and the fourth capacitor C4 located at its two ends can also form a T-type impedance matching network, enabling the bandwidth of the radio frequency front-end module to be wider, improving the bandwidth of the radio frequency front-end module, and improving its working performance. For example, the transmission speed can be faster and the anti-interference ability can be stronger, etc.

[0091] In an embodiment of this application, the first transistor PA-P can be a heterojunction bipolar transistor, and the second transistor PA-N can be a heterojunction bipolar transistor.

[0092] Based on the above, the base of the first transistor PA-P is electrically connected to the first input terminal RFin-P. The collector of the first transistor PA-P inputs the supply voltage VCC adapted by the radio frequency front-end module. The collector of the first transistor PA-P is also electrically connected to one end of the primary winding 111. The emitter of the first transistor PA-P is grounded.

[0093] The base of the second transistor PA-N is electrically connected to the second input terminal RFin-N. The collector of the second transistor PA-N receives the supply voltage VCC adapted to the radio frequency front-end module. The collector of the second transistor PA-N is also electrically connected to the other end of the primary winding 111, and the emitter of the second transistor PA-N is grounded.

[0094] In the above embodiment, the first transistor PA-P may be a heterojunction bipolar transistor, and the second transistor PA-N may be a heterojunction bipolar transistor, but the present application does not limit this, and it depends on the specific situation.

[0095] In an embodiment of the present application, as Figure 1 shown, the amplifier circuit PA further includes a first inductor L1 and a second inductor L2, as well as a fifth capacitor C5 and a sixth capacitor C6.

[0096] The first inductor L1 is located between the first transistor PA-P and the first node 1. One end of the first inductor L1 is electrically connected to the second end of the first transistor PA-P, and the other end of the first inductor L1 is electrically connected to the first node 1.

[0097] The second inductor L2 is located between the second transistor PA-N and the first node 1. One end of the second inductor L2 is electrically connected to the second end of the second transistor PA-N, and the other end of the second inductor L2 is electrically connected to the first node 1.

[0098] The fifth capacitor C5 is located between the first transistor PA-P and the primary winding 111. The first plate of the fifth capacitor C5 is electrically connected to the second end of the first transistor PA-P, and the second plate of the fifth capacitor C5 is electrically connected to the primary winding 111.

[0099] The sixth capacitor C6 is located between the second transistor PA-N and the primary winding 111. The first plate of the sixth capacitor C6 is electrically connected to the second end of the second transistor PA-N, and the second plate of the sixth capacitor C6 is electrically connected to the primary winding 111.

[0100] In this embodiment, the first inductor L1 and the second inductor L2 are used to block alternating current to suppress the mutual interference between the power supply VCC and the amplifier circuit PA, and the fifth capacitor C5 and the sixth capacitor C6 are used to block direct current to suppress the mutual interference between the amplifier circuit PA and the balun structure 110.

[0101] Based on the radio frequency front-end module described in any of the above embodiments, the present application further provides a communication system, which includes the radio frequency front-end module described in any of the above embodiments.

[0102] Based on the above communication system, the present application provides a communication device, which includes the above communication system.

[0103] In summary, the present application provides a radio frequency front-end module, a communication system, and a communication device. The radio frequency front-end module includes: an amplification circuit and a matching circuit. The amplification circuit inputs a supply voltage and a first signal, and obtains a second signal based on the first signal. The matching circuit amplifies the second signal to form a target signal, which is the output signal of the radio frequency front-end module. The matching circuit includes a balun structure and an impedance matching adjustment unit. The balun structure includes a primary winding and a secondary winding. The primary winding is electrically connected to the amplification circuit and is also grounded. The secondary winding is electrically connected to the impedance matching adjustment unit, and the secondary winding is also electrically connected to the output terminal through the impedance matching adjustment unit. Among them, the radio frequency front-end module can adapt to different supply voltages based on the capacitance value of the impedance matching adjustment unit, and the supply voltage adapted by the radio frequency front-end module is inversely proportional to the capacitance value of the impedance matching adjustment unit. It can be seen that the radio frequency front-end module can adapt to different supply voltages by changing the capacitance value of the impedance matching adjustment unit. That is to say, the supply voltage adapted by the radio frequency front-end module can be regulated. Thus, the radio frequency front-end module can match multiple voltage environments, that is, the radio frequency front-end module can be applied to different communication devices, greatly simplifying the research and design of communication devices. At the same time, for users of the radio frequency front-end module, it also greatly simplifies material management and has strong practical value.

[0104] In the present specification, the various embodiments are described in a progressive, or parallel, or a combination of progressive and parallel manners. Each embodiment focuses on the differences from other embodiments. The same or similar parts among the various embodiments can be referred to each other. For the devices disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the description is relatively simple, and the relevant parts can be referred to the description of the method part.

[0105] It should be noted that in the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present application. When a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be intermediate components present.

[0106] It should also be noted that in this text, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that an article or device comprising a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such article or device. Without further limitation, an element defined by the statement "comprising an..." does not exclude the presence of additional identical elements in the article or device comprising the above element.

[0107] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be obvious to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A radio frequency front-end module, characterized in that, Comprising: An amplifier circuit, which inputs a supply voltage, and the supply voltage powers the radio frequency front-end module; the amplifier circuit is also electrically connected to an input terminal, inputs a first signal, and obtains a second signal based on the first signal; A matching circuit, which amplifies the second signal to form a target signal, and the target signal is the output signal of the radio frequency front-end module; The matching circuit includes a balun structure and an impedance matching adjustment unit. The balun structure includes a primary winding and a secondary winding. The primary winding is electrically connected to the amplifier circuit, and the primary winding is also grounded. The secondary winding is electrically connected to the impedance matching adjustment unit, and the secondary winding is also electrically connected to an output terminal through the impedance matching adjustment unit; the input terminal and the output terminal are respectively the input terminal and the output terminal of the radio frequency front-end module; Wherein, the radio frequency front-end module adapts different supply voltages based on the capacitance value of the impedance matching adjustment unit, and the supply voltage adapted by the radio frequency front-end module is inversely proportional to the capacitance value of the impedance matching adjustment unit.

2. The radio frequency front-end module according to claim 1, wherein The amplifier circuit includes a first transistor and a second transistor, the input terminal includes a first input terminal and a second input terminal, and the first signal includes a first sub-signal and a second sub-signal; The first end of the first transistor is electrically connected to the first input terminal for inputting the first sub-signal. The second end of the first transistor inputs the supply voltage adapted by the radio frequency front-end module. The second end of the first transistor is also electrically connected to one end of the primary winding, and the third end of the first transistor is grounded; The first end of the second transistor is electrically connected to the second input terminal for inputting the second sub-signal. The second end of the second transistor inputs the supply voltage adapted by the radio frequency front-end module. The second end of the second transistor is also electrically connected to the other end of the primary winding, and the third end of the second transistor is grounded.

3. The radio frequency front-end module according to claim 2, wherein The impedance matching adjustment unit includes at least one first capacitor and at least one second capacitor, and at least one first switch corresponding to the first capacitor and at least one second switch corresponding to the second capacitor; The first end of the secondary winding is electrically connected to the output terminal. The first electrode plate of the first capacitor is electrically connected to the first end of the secondary winding, and the first electrode plate of the first capacitor is also electrically connected to the output terminal. The second electrode plate of the first capacitor is electrically connected to the first switch, and the first switch is grounded; The first electrode plate of the second capacitor is electrically connected to the second end of the secondary winding. The second electrode plate of the second capacitor is electrically connected to the second switch, and the second switch is grounded; The impedance matching adjustment unit changes its capacitance value based on the opening and closing of the first switch and the second switch.

4. The RF front-end module according to claim 3, wherein, The impedance matching adjustment unit includes a first capacitor and a second capacitor, and a first switch corresponding to the first capacitor and a second switch corresponding to the second capacitor; The first switch and the second switch are open, the capacitance value of the impedance matching adjustment unit is a first capacitance value, and the power supply voltage adapted by the RF front-end module is a first voltage value; one of the first switch and the second switch is open and the other is closed, the capacitance value of the impedance matching adjustment unit is a second capacitance value, and the power supply voltage adapted by the RF front-end module is a second voltage value; the first switch and the second switch are closed, the capacitance value of the impedance matching adjustment unit is a third capacitance value, and the power supply voltage adapted by the RF front-end module is a third voltage value; Wherein, the first capacitance value is greater than the second capacitance value, the second capacitance value is greater than the third capacitance value, the first voltage value is less than the second voltage value, and the second voltage value is less than the third voltage value.

5. The radio frequency front-end module according to claim 3, wherein The impedance matching adjustment unit includes at least two first capacitors and at least two second capacitors, as well as at least two first switches corresponding to the first capacitors one by one and at least two second switches corresponding to the second capacitors one by one; The first switch and the second switch are open, the capacitance value of the impedance matching adjustment unit is a fourth capacitance value, and the power supply voltage adapted by the RF front-end module is a fourth voltage value; At least one of the at least two first switches is closed, and at least one of the at least two second switches is closed. The capacitance value of the impedance matching adjustment unit is a fifth capacitance value, and the power supply voltage adapted by the RF front-end module is a fifth voltage value; Wherein, the fourth capacitance value is greater than the fourth capacitance value, the fourth voltage value is less than the fifth voltage value, and the fifth voltage value increases as the number of closed first switches and second switches increases.

6. The RF front-end module according to claim 2, wherein The impedance matching adjustment unit includes at least one third capacitor and at least one fourth capacitor, and the third capacitor and the fourth capacitor are adjustable capacitors with adjustable capacitance values; The first end of the secondary winding is electrically connected to the output end. The first electrode plate of the third capacitor is electrically connected to the first end of the secondary winding, and the first electrode plate of the third capacitor is also electrically connected to the output end. The second electrode plate of the third capacitor is grounded; The first electrode plate of the fourth capacitor is electrically connected to the second end of the secondary winding, and the second electrode plate of the fourth capacitor is grounded; The capacitance value of the impedance matching adjustment unit changes based on the capacitance value changes of the third capacitor and the fourth capacitor.

7. The radio frequency front-end module according to claim 2, wherein The first transistor is a heterojunction bipolar transistor, and the second transistor is a heterojunction bipolar transistor; The base of the first transistor is electrically connected to the first input end, the collector of the first transistor inputs the power supply voltage adapted by the RF front-end module, the collector of the first transistor is also electrically connected to one end of the primary winding, and the emitter of the first transistor is grounded; The base of the second transistor is electrically connected to the second input end, the collector of the second transistor inputs the power supply voltage adapted by the RF front-end module, the collector of the second transistor is also electrically connected to the other end of the primary winding, and the emitter of the second transistor is grounded.

8. The RF front-end module according to claim 2, wherein, The amplifier circuit further includes a first inductor, a second inductor, a fifth capacitor, and a sixth capacitor; The first inductor is located between the first transistor and the first node. One end of the first inductor is electrically connected to the second end of the first transistor, and the other end of the first inductor is electrically connected to the first node; The second inductor is located between the second transistor and the first node. One end of the second inductor is electrically connected to the second end of the second transistor, and the other end of the second inductor is electrically connected to the first node; the second ends of the first transistor and the second transistor input the supply voltage adapted to the RF front-end module through the first node; The fifth capacitor is located between the first transistor and the primary winding. The first plate of the fifth capacitor is electrically connected to the second end of the first transistor, and the second plate of the fifth capacitor is electrically connected to the primary winding; The sixth capacitor is located between the second transistor and the primary winding. The first plate of the sixth capacitor is electrically connected to the second end of the second transistor, and the second plate of the sixth capacitor is electrically connected to the primary winding.

9. A communication system, characterized in that, Comprising the RF front-end module according to any one of claims 1-8.

10. A communication device, characterized in that, Comprising the communication system according to claim 9.

Images