Mini-LED wafer testing method, sorting method, electronic equipment and storage medium

Abstract

The invention relates to the technical field of LED production, and particularly discloses a Mini-LED wafer testing method, a sorting method, electronic equipment and a storage medium. The test method comprises the following steps: S1, acquiring position information of Mini-LED crystal grains; s2, generating a plurality of initial test groups according to the position information and probe arrangement information of the multi-channel probe group; s3, taking the position information of any to-be-tested Mini-LED crystal grain in the initial test group as a reference, and generating first test coordinate information of the to-be-tested Mini-LED crystal grain; s4, taking any initial test group as a target test group, and judging whether the position information of the to-be-tested Mini-LED crystal grain is the same as the first test coordinate information or not; s5, if yes, driving the multi-channel probe group to test according to the first test coordinate information; after the test is completed, taking another initial test group as a new target test group, and entering the step S4; and S6, skipping the target test group when judging that the initial test group is different from the target test group, taking another initial test group as a new target test group, and entering the step S4. According to the invention, the test efficiency and the product yield can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of LED production, and particularly to a Mini-LED wafer testing method, a sorting method, an electronic device, and a storage medium. Background Art

[0002] In the field of Mini-LED wafer manufacturing, each Mini-LED chip on the wafer is tested to obtain basic electrical characteristic data of each chip, such as forward voltage (VF), luminance (LOP), wavelength (WLD), etc. Then, sorting is performed according to the test data. Traditional testing equipment is generally single-channel, that is, one chip is tested at a time. However, as the chip size becomes increasingly smaller and the number of chips on each wafer gradually increases, it is necessary to improve the testing efficiency. Therefore, multi-channel testing equipment has been developed in the prior art, such as four-channel testing equipment, which generally arranges several probe groups closely along the X direction or the Y direction to form multiple channels. However, the multi-channel testing equipment has high requirements for the arrangement position of the chips. If the chips are skewed (such as Figure 1 ), it will cause the probe to pierce at the edge of the electrode or even miss the electrode ( Figure 2 ), which will result in abnormal electrical data and even a large range of abnormal chips (such as Figure 3 , purple is abnormal), and repeated testing and correction are required in the later stage, which greatly affects the product yield.

[0003] On the other hand, during the production process of Mini-LED chips, processes such as laser scribing and dicing are required. Since they act on different surfaces, film flipping is often required before testing, that is, the wafer diced into small chips (one side attached with a carrier film) is bonded to another blue film or white film, and then its original carrier film is removed. This process easily causes problems such as skewing and tilting of the chips. During traditional testing, generally, the incoming wafer is first expanded, and this expansion will further increase the skewing degree of the originally skewed chips, making subsequent correction difficult. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a testing method for Mini-LED wafers, which can greatly improve the testing efficiency and product yield.

[0005] Another technical problem to be solved by the present invention is to provide a sorting method for Mini-LED wafers, which has high sorting efficiency and high product yield.

[0006] Another technical problem to be solved by the present invention is to provide a testing system for Mini-LED wafers.

[0007] Another technical problem to be solved by the present invention is to provide an electronic device.

[0008] Another technical problem to be solved by the present invention is to provide a storage medium.

[0009] To solve the above problems, the present invention discloses a method for testing a Mini-LED wafer, which includes the following steps:

[0010] S1. Obtain the position information of Mini-LED chips on the Mini-LED wafer;

[0011] S2. Generate a plurality of initial test groups according to the position information of the Mini-LED chips and the probe arrangement information of the multi-channel probe group;

[0012] S3. Taking the position information of any Mini-LED chip to be tested in the initial test group as a reference, generate the first test coordinate information of the Mini-LED chips to be tested in the initial test group;

[0013] S4. Taking any initial test group as the target test group, determine whether the position information of the Mini-LED chips to be tested in the target test group is the same as its first test coordinate information;

[0014] S5. When it is determined to be the same, drive the multi-channel probe group to test the Mini-LED chips to be tested in the target test group according to the first test coordinate information; after the test is completed, take another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are completed;

[0015] S6. When it is determined to be different, skip the target test group, take another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are completed.

[0016] As an improvement of the above technical solution, step S6 includes:

[0017] S61. When it is determined to be different, determine whether the centers of at least two Mini-LED chips to be tested in the target test group are located on the same straight line;

[0018] S62. When it is determined to exist, drive the multi-channel probe group to test the first Mini-LED chips located on the same straight line in the target test group; after the test is completed, take another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are completed;

[0019] S63. When it is determined to not exist, skip the target test group, take another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are completed.

[0020] As an improvement of the above technical solution, step S62 includes:

[0021] S621. When it is determined that there is a situation, taking the position information of any first Mini-LED chip on the same straight line as a reference, generating second test coordinate information of the first Mini-LED chips on the same straight line;

[0022] S622. Driving a multi-channel probe group to test the first Mini-LED chips according to the second test coordinate information; after the test is completed, taking another initial test group as the new target test group, and entering step S4 until all the initial test groups on the Mini-LED wafer are tested.

[0023] As an improvement of the above technical solution, step S6 includes:

[0024] S61. When it is determined that they are different, obtaining the deviation between the position information of each Mini-LED chip to be tested in the target test group and the first test coordinate information, and rotating the Mini-LED wafer according to the deviation;

[0025] S62. Obtaining the updated position information of each Mini-LED chip to be tested in the target test group on the rotated Mini-LED wafer;

[0026] S63. Judging whether the updated position information of the Mini-LED chip to be tested is the same as the first test coordinate information;

[0027] S64. When it is determined that they are the same, driving the multi-channel probe group to test the Mini-LED chips to be tested in the target test group according to the first test coordinate information; after the test is completed, taking another initial test group as the new target test group, and entering step S4 until all the initial test groups on the Mini-LED wafer are tested;

[0028] S65. When it is determined that they are different, skipping the target test group, taking another initial test group as the new target test group, and entering step S4 until all the initial test groups on the Mini-LED wafer are tested.

[0029] As an improvement of the above technical solution, in step S61, the rotation angle is calculated according to the following formula:

[0030] α = arctan(Y i -y i ) / (X i -x i )

[0031] In the formula, (X i, Y i ) is the first test coordinate information of the i-th Mini-LED die to be tested in the target test group, (x i , y i ) is the position information of the i-th Mini-LED die to be tested in the target initial test group.

[0032] As an improvement of the above technical solution, step S63 includes:

[0033] S631. When it is determined that there is none, obtain the deviation between the position information and the first test coordinate information of each Mini-LED die to be tested in the target test group, and rotate the Mini-LED wafer according to the deviation;

[0034] S632. Obtain the updated position information of each Mini-LED die to be tested in the target test group on the rotated Mini-LED wafer;

[0035] S633. Determine whether the updated position information of the Mini-LED die to be tested is the same as its first test coordinate information;

[0036] S634. When it is determined that they are the same, drive the multi-channel probe group to test the Mini-LED die to be tested in the target test group according to the test coordinate information; after the test is completed, use another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are completed;

[0037] S635. When it is determined that they are different, skip the target test group, use another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are completed.

[0038] Correspondingly, the present invention also discloses a sorting method for a Mini-LED wafer, which includes the following steps:

[0039] S1. Obtain the position information of the Mini-LED dies on the Mini-LED wafer;

[0040] S2. Generate a plurality of initial test groups according to the position information of the Mini-LED dies and the probe arrangement information of the multi-channel probe group;

[0041] S3. Take the position information of any Mini-LED die to be tested in the initial test group as a reference to generate the first test coordinate information of the Mini-LED dies to be tested in the initial test group;

[0042] S4. Take any initial test group as the target test group, and determine whether the position information of the Mini-LED dies to be tested in the target test group is the same as its first test coordinate information;

[0043] S5. When it is determined to be the same, drive the multi-channel probe group to test the Mini-LED dies to be tested in the target test group according to the first test coordinate information; after the test is completed, take another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are tested;

[0044] S6. When it is determined to be different, skip the target test group, take another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are tested;

[0045] S7. Expand the Mini-LED wafer;

[0046] S8. Sort the tested Mini-LED dies;

[0047] S9. Perform spot testing on the untested Mini-LED wafer using a single-channel probe, and then sort it.

[0048] Correspondingly, the present invention also discloses a detection system for a Mini-LED wafer, which includes:

[0049] A scanning module for scanning the Mini-LED wafer to obtain the position information of the Mini-LED dies;

[0050] A partitioning module for generating a plurality of initial test groups according to the position information of the Mini-LED dies to be tested and the probe arrangement information of the multi-channel probe group, and generating the first test coordinate information of the Mini-LED dies to be tested in the initial test groups;

[0051] A judgment module for judging whether the position information of the Mini-LED dies to be tested in the target test group is the same as its first test coordinate information;

[0052] A moving module for driving the multi-channel probe group to move according to the first test coordinate information; and

[0053] A testing module for testing the Mini-LED dies to be tested.

[0054] Correspondingly, the present invention also discloses an electronic device, including a memory and a processor, where the memory stores a computer program, and when the processor executes the computer program, the steps of the above-mentioned testing method for the Mini-LED wafer are implemented.

[0055] Accordingly, the present invention also discloses a storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps of the above-mentioned testing method for Mini-LED wafers are implemented.

[0056] Implementing the present invention has the following beneficial effects:

[0057] In the testing method for Mini-LED wafers in an embodiment of the present invention, the position information of the Mini-LED die to be tested is compared with its first test coordinate information (theoretical position information). When the comparison is the same, a multi-channel probe group is used for testing, and when the comparison is different, no testing is performed. This prevents the probe group from being misaligned, resulting in abnormal needle marks, affecting the production quality and yield. Further, in the testing method of the present invention, the position of the Mini-LED die to be tested is corrected according to the skew situation, and its angle is adjusted, which greatly improves the product yield and realizes high output and high yield. Description of the Drawings

[0058] Figure 1 is a real-shot picture of the skew of Mini-LED dies in the prior art;

[0059] Figure 2 is a real-shot picture of the needle marks of Mini-LED dies after testing in the prior art;

[0060] Figure 3 is an abnormal state diagram of a Mini-LED wafer after testing in the prior art;

[0061] Figure 4 is a flowchart of the testing method for Mini-LED wafers in Embodiment 1 of the present invention;

[0062] Figure 5 is a flowchart of step S6 in Embodiment 2 of the present invention;

[0063] Figure 6 is a flowchart of step S6 in Embodiment 3 of the present invention;

[0064] Figure 7 Schematic diagram of the landing points of the probes in Embodiment 3 of the present invention. Detailed Embodiments

[0065] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0066] Example 1

[0067] Refer to Figure 4 , this example provides a method for testing Mini-LED wafers, which includes the following steps:

[0068] S1: Obtain the position information of Mini-LED chips on the Mini-LED wafer;

[0069] Specifically, load the Mini-LED wafer into the test equipment, scan the wafer through a camera, accurately obtain the coordinate data of each Mini-LED chip, and ensure that the position information of each Mini-LED chip is accurately stored in the storage medium of the equipment. This step provides a reliable data basis for subsequent tests and avoids test deviations caused by position information errors.

[0070] Preferably, in some embodiments, before scanning, it can be calibrated, such as correcting its internal and external parameters, lens distortion, etc. After scanning, an image recognition algorithm can be further used to optimize the scanning results and improve the accuracy of the position information.

[0071] S2: Generate a plurality of initial test groups according to the position information of the Mini-LED chips and the probe arrangement information of the multi-channel probe group;

[0072] Specifically, the probe arrangement information of the multi-channel probe group includes the number of channels and the arrangement direction of the probes. For example, in some embodiments, the multi-channel probe group can be a four-channel probe group, that is, a total of four probe groups are set, and they are arranged in parallel along the horizontal or vertical direction. It should be noted that a set of probe groups includes two probes, which respectively correspond to the N electrode and P electrode of the Mini-LED chip.

[0073] Specifically, in step S2, according to the obtained position information of the Mini-LED chips, combined with the probe arrangement information, generate a plurality of initial test groups in any direction (such as the X direction or Y direction). In addition, the generation of the initial test groups also needs to consider the movement path and speed of the probe groups to optimize the test efficiency.

[0074] Exemplarily, when using a four-channel probe group and taking the Y direction as the test direction, each column of Mini-LED chips in the Y direction is allocated in groups of 4 to form a plurality of initial test groups. For the Mini-LED chips in the edge area, if there are less than four, they are grouped separately to ensure comprehensive test coverage.

[0075] S3: Based on the position information of any Mini-LED chip to be tested in the initial test group, generate the first test coordinate information of the Mini-LED chips to be tested in the initial test group;

[0076] Specifically, the coordinates of the first Mini-LED die in the initial test group can be selected as the reference point, and combined with the arrangement information of each probe group, the first test coordinate information of the remaining Mini-LED dies is generated, but not limited to this. The first test coordinate information is the coordinate position when each Mini-LED die to be tested in the initial test group is accurately docked with its corresponding probe group. By determining this position, it is possible to accurately judge whether the Mini-LED die to be tested is skewed in the subsequent process.

[0077] S4: Use any initial test group as the target test group, and judge whether the position information of the Mini-LED dies to be tested in the target test group is the same as its first test coordinate information;

[0078] Specifically, compare the position information (i.e., its actual position) of each Mini-LED die to be tested in the target test group with the first test coordinate information (i.e., the test position where it should be theoretically) to judge whether they are the same. It should be noted that the "same" here does not mean absolute coincidence, but a certain range of deviation is allowed as long as it ensures that the probe group can be accurately docked. If the deviation exceeds the set range, they are different.

[0079] S5: When it is judged to be the same, drive the multi-channel probe group to test the Mini-LED dies to be tested in the target test group according to the first test coordinate information; after the test is completed, use another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are tested;

[0080] Specifically, when it is determined that the position information of the Mini-LED die to be tested is the same as the first test coordinate information, control the multi-channel probe group to move to the corresponding position (the first test coordinate) along a predetermined path and energize for testing. Collect test data and record the performance parameters of each Mini-LED die.

[0081] Preferably, in some embodiments, before the multi-channel probe group moves to the new target test group, the probe group is pre-tested self, and then the Mini-LED die is tested. After the test, analyze the collected test data to judge whether each Mini-LED die in the initial test group meets the grading criteria.

[0082] S6: When it is judged to be different, skip the target test group, use another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are tested.

[0083] Specifically, when it is determined that they are different, it indicates that the position deviation of the Mini-LED chips in the target test group is too large to accurately dock with the probe group. Therefore, this group is skipped, and the position comparison and testing are continued for the next initial test group to ensure the overall test efficiency and accuracy.

[0084] In summary, in the test method of the Mini-LED wafer in this embodiment, by accurately comparing the position information of the Mini-LED with the first test coordinates, the accurate docking of the probe group is ensured, the test accuracy is improved, and the Mini-LED chips are prevented from being damaged by the probes. At the same time, this method effectively reduces the repeated operations in the test process, improves the overall test efficiency, and guarantees the quality and reliability of the Mini-LED wafer.

[0085] Embodiment 2

[0086] This embodiment provides a test method for a Mini-LED wafer, which is different from Embodiment 1 in that: Refer to Figure 5 , step S6 includes:

[0087] S61. When it is determined that they are different, determine whether the centers of at least two Mini-LED chips to be tested in the target test group are on the same straight line;

[0088] Specifically, the center coordinates are calculated through the position information of the Mini-LED chips to be tested, and then it is determined whether the centers of at least two Mini-LED chips to be tested are on the same straight line.

[0089] S62. When it is determined that there are, drive the multi-channel probe group to test the first Mini-LED chips on the same straight line in the target test group; after the test is completed, use another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are tested;

[0090] Specifically, when testing the first Mini-LED chips on the same straight line, only the probe group corresponding to the first Mini-LED chips in the multi-channel probe group is powered on, and the rest of the probe groups remain powered off.

[0091] S63. When it is determined that there are not, skip the target test group, use another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are tested.

[0092] Through this refined test strategy, the utilization efficiency of the multi-channel probe group is optimized, and the test accuracy and speed are further improved.

[0093] Embodiment 3

[0094] This embodiment provides a method for testing a Mini-LED wafer, which is different from Embodiment 1 in that: Refer to Figure 7 , step S6 includes:

[0095] S61. When it is judged to be different, obtain the deviation between the position information of each Mini-LED die to be tested in the target test group and the first test coordinate information, and rotate the Mini-LED wafer according to the deviation;

[0096] Specifically, the deviation of each Mini-LED die to be tested is calculated, and its specific calculation method is as follows:

[0097] △x i = X i - x i

[0098] △y i = Y i - y i .

[0099] Among them, △x i is the deviation of the i-th Mini-LED die to be tested in the x direction in the target test group, and △y i is the deviation of the i-th Mini-LED die to be tested in the y direction in the target test group, (X i , Y i ) is the first test coordinate information of the i-th Mini-LED die to be tested in the target test group, (x i , y i ) is the position information of the i-th Mini-LED die to be tested in the target test group.

[0100] Specifically, after obtaining the deviation, the Mini-LED wafer can be rotated and translated according to the deviation to adjust the position of the Mini-LED die to be tested, but it is not limited to this.

[0101] Preferably, in some embodiments, the position of the Mini-LED wafer to be tested in the initial test group is adjusted by rotating the Mini-LED wafer, and the rotation angle is calculated according to the following formula:

[0102] α = arctan(Y i - y i ) / (X i - x i )

[0103] In the formula, (X i , Y i ) is the first test coordinate information of the i-th Mini-LED die to be tested in the target test group, (x i , y i) is the position information of the i-th Mini-LED die to be tested in the target test group.

[0104] S62. Obtain the updated position information of each Mini-LED die to be tested in the target test group on the rotated Mini-LED wafer;

[0105] Specifically, the updated position information is obtained by re-scanning the Mini-LED wafer, or can be obtained by calculation, but is not limited thereto.

[0106] S63. Determine whether the updated position information of the Mini-LED die to be tested is the same as the first test coordinate information;

[0107] Specifically, compare the updated position information (i.e., its actual position) of the Mini-LED die to be tested in the target test group with the first test coordinate information (i.e., the test position where it should theoretically be). It should be noted that the sameness here does not mean absolute coincidence, but allows a deviation within a certain range, as long as it ensures that the probe group can be accurately docked. If the deviation exceeds the set range, it is considered different.

[0108] S64. When it is determined to be the same, drive the multi-channel probe group to test the Mini-LED die to be tested in the target test group according to the first test coordinate information; after the test is completed, use another initial test group as the new target test group, and enter step S4 until all initial test groups on the Mini-LED wafer are tested;

[0109] Specifically, when it is determined that the updated position information of the Mini-LED die to be tested is the same as the first test coordinate information, control the multi-channel probe group to move to the corresponding position (the first test coordinate) along a predetermined path and energize for testing. Collect test data and record the performance parameters of each Mini-LED die.

[0110] S65. When it is determined to be different, skip the target test group, use another initial test group as the new target test group, and enter step S4 until all initial test groups on the Mini-LED wafer are tested.

[0111] Specifically, when it is determined to be different, it means that there is still a problem of excessive position deviation for the Mini-LED die in the target test group even after rotation correction, and it cannot be accurately docked with the probe group. Therefore, skip this group and continue to compare the position and test the next initial test group to ensure the overall test efficiency and accuracy. Specifically, after this adjustment, the probe landing points are as Figure 7 shown.

[0112] Embodiment 4

[0113] This embodiment provides a method for testing a Mini-LED wafer, which is different from that of Embodiment 2 in that: Step S63 includes:

[0114] S631. When it is determined that there is none, obtain the deviation between the position information of each Mini-LED die to be tested in the target test group and the first test coordinate information, and rotate the Mini-LED wafer according to the deviation;

[0115] Specifically, the deviation of each Mini-LED die to be tested is calculated, and its specific calculation method is as follows:

[0116] △x i =X i -x i

[0117] △y i =Y i -y i 。

[0118] Wherein, △x i is the deviation of the i-th Mini-LED die to be tested in the target test group in the x direction, and △y i is the deviation of the i-th Mini-LED die to be tested in the target test group in the y direction, (X i , Y i ) is the first test coordinate information of the i-th Mini-LED die to be tested in the target test group, and (x i , y i ) is the position information of the i-th Mini-LED die to be tested in the target test group.

[0119] Specifically, after obtaining the deviation, the Mini-LED wafer can be rotated and translated according to the deviation to adjust the position of the Mini-LED die to be tested, but it is not limited to this.

[0120] Preferably, in some embodiments, the position of the Mini-LED wafer to be tested in the initial test group is adjusted by rotating the Mini-LED wafer, and the rotation angle is calculated according to the following formula:

[0121] α=arctan(Y i -y i ) / (X i -x i )

[0122] In the formula, (X i , Y i ) is the first test coordinate information of the i-th Mini-LED die to be tested in the target test group, and (x i , y i) is the position information of the i-th Mini-LED die to be tested in the target test group.

[0123] S632. Obtain the updated position information of each Mini-LED die to be tested in the target test group on the rotated Mini-LED wafer;

[0124] Specifically, the updated position information is obtained by re-scanning the Mini-LED wafer, or can be obtained by calculation, but is not limited thereto.

[0125] S633. Determine whether the updated position information of the Mini-LED die to be tested is the same as its first test coordinate information;

[0126] Specifically, compare the updated position information (i.e., its actual position) of the Mini-LED die to be tested in the target test group with the first test coordinate information (i.e., the test position where it should theoretically be), and determine whether they are the same. It should be noted that the "same" here does not mean absolute coincidence, but allows a certain range of deviation, as long as it ensures that the probe group can be accurately docked. If the deviation exceeds the set range, they are different.

[0127] S634. When it is determined to be the same, drive the multi-channel probe group to test the Mini-LED die to be tested in the target test group according to the test coordinate information; after the test is completed, use another initial test group as the new target test group, and enter step S4 until all initial test groups on the Mini-LED wafer are completed;

[0128] Specifically, when it is determined that the updated position information of the Mini-LED die to be tested is the same as the first test coordinate information, control the multi-channel probe group to move to the corresponding position (the first test coordinate) along a predetermined path and energize for testing. Conduct test data acquisition and record the performance parameters of each Mini-LED die.

[0129] S635. When it is determined to be different, skip the target test group, use another initial test group as the new target test group, and enter step S4 until all initial test groups on the Mini-LED wafer are completed.

[0130] Specifically, when it is determined to be different, it means that there is still a problem of excessive position deviation in the Mini-LED die in the target test group even after rotation correction, and it cannot be accurately docked with the probe group. Therefore, skip this group and continue to compare the position and test the next initial test group to ensure the overall test efficiency and accuracy.

[0131] Embodiment 5

[0132] This embodiment provides a sorting method for a Mini-LED wafer, which includes the following steps:

[0133] S1: Obtain the position information of Mini-LED dies on the Mini-LED wafer;

[0134] S2: Generate a plurality of initial test groups according to the position information of the Mini-LED dies and the probe arrangement information of the multi-channel probe group;

[0135] S3: Taking the position information of any Mini-LED die to be tested in the initial test group as a reference, generate the first test coordinate information of the Mini-LED dies to be tested in the initial test group;

[0136] S4: Taking any initial test group as the target test group, determine whether the position information of the Mini-LED dies to be tested in the target test group is the same as its first test coordinate information;

[0137] S5: When it is determined to be the same, drive the multi-channel probe group to test the Mini-LED dies to be tested in the target test group according to the first test coordinate information; after the test is completed, take another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are tested;

[0138] S6: When it is determined to be different, skip the target test group, take another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are tested;

[0139] S7: Expand the Mini-LED wafer;

[0140] S8: Sort the tested Mini-LED dies;

[0141] S9: Perform spot testing on the untested Mini-LED wafer using a single-channel probe, and then sort.

[0142] In this embodiment, the Mini-LED wafer is tested using a multi-channel probe group before the wafer expansion process, which improves the testing efficiency. At the same time, since the deviation (skew, tilt, etc.) of each Mini-LED die is relatively small before the wafer expansion process, it can be corrected by the methods of Embodiment 2 to Embodiment 5 of the present application, realizing high-efficiency testing. Further, in order to prevent the deviation of some Mini-LED dies from being too large, the remaining Mini-LED dies after sorting are spot-tested using a single-channel probe and then sorted.

[0143] Embodiment 6

[0144] This embodiment provides a detection system for a Mini-LED wafer, which includes:

[0145] A scanning module, a dividing module, a judging module, a moving module, and a testing module. Among them, the scanning module is used to scan the Mini-LED wafer to obtain the position information of the Mini-LED chips; the dividing module is used to generate a plurality of initial test groups according to the position information of the Mini-LED chips to be tested and the probe arrangement information of the multi-channel probe group, and generate the first test coordinate information of the Mini-LED chips to be tested in the initial test groups; the judging module is used to judge whether the position information of the Mini-LED chips to be tested in the target test group is the same as its first test coordinate information; the moving module is used to drive the multi-channel probe group to move according to the first test coordinate information; the testing module is used to test the Mini-LED chips to be tested.

[0146] In the description of this specification, the descriptions referring to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0147] Although the embodiments of the present application have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and purposes of the present application, and the scope of the present application is defined by the claims and their equivalents.

Claims

1. A testing method for Mini-LED wafers, characterized in that, It includes the following steps: S1. Obtain the position information of Mini-LED chips on the Mini-LED wafer; S2. Generate a plurality of initial test groups according to the position information of the Mini-LED chips and the probe arrangement information of the multi-channel probe group; S3. Taking the position information of any Mini-LED chip to be tested in the initial test group as a reference, generate the first test coordinate information of the Mini-LED chips to be tested in the initial test group; S4. Taking any initial test group as the target test group, determine whether the position information of the Mini-LED chips to be tested in the target test group is the same as its first test coordinate information; S5. When it is determined to be the same, drive the multi-channel probe group to test the Mini-LED chips to be tested in the target test group according to the first test coordinate information; after the test is completed, take another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are completed; S6. When it is determined to be different, skip the target test group, take another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are completed.

2. The test method of the Mini-LED wafer according to claim 1, wherein, Step S6 includes: S61. When it is determined to be different, determine whether the centers of at least two Mini-LED chips to be tested in the target test group are on the same straight line; S62. When it is determined to exist, drive the multi-channel probe group to test the first Mini-LED chips on the same straight line in the target test group; after the test is completed, take another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are completed; S63. When it is determined not to exist, skip the target test group, take another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are completed.

3. The test method for the Mini-LED wafer according to claim 2, wherein, Step S62 includes: S621. When it is determined to exist, taking the position information of any first Mini-LED chip on the same straight line as a reference, generate the second test coordinate information of the first Mini-LED chips on the same straight line; S622. Drive the multi-channel probe group to test the first Mini-LED chips according to the second test coordinate information; after the test is completed, take another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are completed.

4. The test method of the Mini-LED wafer according to claim 1, wherein, Step S6 includes: S61. When it is determined to be different, obtain the deviation between the position information of each Mini-LED chip to be tested in the target test group and the first test coordinate information, and rotate the Mini-LED wafer according to the deviation; S62. Obtain the updated position information of each Mini-LED chip to be tested in the target test group on the rotated Mini-LED wafer; S63. Determine whether the updated position information of the Mini-LED die to be tested is the same as the first test coordinate information; S64. When it is determined to be the same, drive the multi-channel probe group to test the Mini-LED die to be tested in the target test group according to the first test coordinate information; after the test is completed, use another initial test group as the new target test group, and enter step S4 until all initial test groups on the Mini-LED wafer are tested; S65. When it is determined to be different, skip the target test group, use another initial test group as the new target test group, and enter step S4 until all initial test groups on the Mini-LED wafer are tested.

5. The test method of the Mini-LED wafer according to claim 1, characterized in that In step S61, the rotation angle is calculated according to the following formula: α = arctan(Y i -y i ) / (X i -x i ) Wherein, (X i , Y i ) is the first test coordinate information of the i-th Mini-LED die to be tested in the target test group, and (x i , y i ) is the position information of the i-th Mini-LED die to be tested in the target initial test group.

6. The test method of the Mini-LED wafer according to claim 2, wherein Step S63 includes: S631. When it is determined to be non-existent, obtain the deviation between the position information of each Mini-LED die to be tested in the target test group and the first test coordinate information, and rotate the Mini-LED wafer according to the deviation; S632. Obtain the updated position information of each Mini-LED die to be tested in the target test group on the rotated Mini-LED wafer; S633. Determine whether the updated position information of the Mini-LED die to be tested is the same as its first test coordinate information; S634. When it is determined to be the same, drive the multi-channel probe group to test the Mini-LED die to be tested in the target test group according to the test coordinate information; after the test is completed, use another initial test group as the new target test group, and enter step S4 until all initial test groups on the Mini-LED wafer are tested; S635. When it is determined to be different, skip the target test group, use another initial test group as the new target test group, and enter step S4 until all initial test groups on the Mini-LED wafer are tested.

7. A sorting method for Mini-LED wafers, characterized in that, It includes the following steps: S1. Obtain the position information of the Mini-LED die on the Mini-LED wafer; S2. Generate a plurality of initial test groups according to the position information of the Mini-LED die and the probe arrangement information of the multi-channel probe group; S3. Generate the first test coordinate information of the Mini-LED die to be tested in the initial test group based on the position information of any Mini-LED die to be tested in the initial test group; S4. Use any initial test group as the target test group, and determine whether the position information of the Mini-LED die to be tested in the target test group is the same as its first test coordinate information; S5. When it is determined to be the same, drive the multi-channel probe group to test the Mini-LED die to be tested in the target test group according to the first test coordinate information; after the test is completed, use another initial test group as the new target test group, and enter step S4 until all initial test groups on the Mini-LED wafer are tested; S6. When it is judged to be different, skip the target test group, use another initial test group as the new target test group, and enter step S4 until all the initial test groups on the Mini-LED wafer are completed for testing; S7. Perform an expansion process on the Mini-LED wafer; S8. Perform a sorting process on the tested Mini-LED chips; S9. Perform spot testing on the untested Mini-LED wafer using a single-channel probe, and then sort it.

8. A detection system for Mini-LED wafers, characterized in that, Including: A scanning module for scanning the Mini-LED wafer to obtain the position information of the Mini-LED chips; A dividing module for generating a plurality of initial test groups according to the position information of the Mini-LED chips to be tested and the probe arrangement information of the multi-channel probe group, and generating the first test coordinate information of the Mini-LED chips to be tested in the initial test group; A judging module for judging whether the position information of the Mini-LED chips to be tested in the target test group is the same as its first test coordinate information; A moving module for driving the multi-channel probe group to move according to the first test coordinate information; And A testing module for testing the Mini-LED chips to be tested.

9. An electronic device, comprising a memory and a processor, the memory storing a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the testing method for the Mini-LED wafer according to any one of claims 1 to 6.

10. A storage medium, on which a computer program is stored, characterized in that, When the computer program is executed by the processor, it implements the steps of the testing method for the Mini-LED wafer according to any one of claims 1 to 6.

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