Micro-display chip and preparation method thereof

Abstract

The invention provides a micro-display chip and a preparation method thereof, and belongs to the technical field of micro-display chips. According to the micro-display chip, a first substrate is arranged in a light-emitting element and is arranged between a light-emitting unit and a light conversion unit, so that the overall structural strength of the light-emitting element is remarkably improved. On one hand, the first substrate provides mechanical support for the light-emitting unit and the light conversion unit to reduce stress damage in the mass transfer process, and on the other hand, the influence of thermal stress on the stacking structure is reduced by optimizing interface bonding. Therefore, the pressure resistance and reliability of the light-emitting element are greatly improved, and the preparation yield of the micro-display chip is improved. Meanwhile, due to the introduction of the first substrate, photo-thermal crosstalk of the light emitting unit and the light conversion unit can be isolated, the light conversion efficiency and the color consistency are enhanced, and finally the high-stability and high-resolution micro-display chip performance is achieved.

Description

Technical Field

[0001] This application relates to the technical field of microdisplay chips, and particularly to a microdisplay chip and a method for manufacturing the same. Background Art

[0002] In recent years, Micro-LED (Micro-Light Emitting Diode) microdisplay chips have shown great application potential in fields such as AR / VR and wearable devices due to their advantages of high brightness, high contrast, and low power consumption. However, the interface structure of existing Micro-LED microdisplay chips is weak, and problems such as fracture and delamination are likely to occur due to mechanical stress during the mass transfer or packaging process. Eventually, it leads to a low device yield and limited lifespan, restricting the high-density integration and large-scale application of microdisplay chips. Summary of the Invention

[0003] Object of the Invention: Embodiments of this application provide a microdisplay chip and a method for manufacturing the same, aiming to solve the technical problem of the weak interface structure of existing microdisplay chips.

[0004] Technical Solution: In a first aspect, embodiments of this application provide a microdisplay chip, including:

[0005] A driving substrate;

[0006] A plurality of transfer components, arranged in an array on the driving substrate, each transfer component includes at least one light-emitting element, the light-emitting element includes a light-emitting unit, a first substrate disposed on the light-emitting unit, and a light conversion unit disposed on the first substrate, and each light-emitting unit can be independently driven by the driving substrate and emit first-color light.

[0007] In some embodiments, the light-emitting element further includes a second substrate, and the second substrate is disposed on the light conversion unit.

[0008] In some embodiments, each transfer component includes a plurality of the light-emitting elements, and the plurality of light-emitting elements are spaced apart from each other.

[0009] In some embodiments, each transfer component includes a plurality of the light-emitting elements, and the first substrates of the plurality of light-emitting elements are an integral structure, and the second substrates are an integral structure.

[0010] In some embodiments, the microdisplay chip further includes:

[0011] An anti-crosstalk layer, at least a part of the anti-crosstalk layer is located in the gap between adjacent transfer components to isolate adjacent transfer components.

[0012] In some embodiments, the light-emitting element further includes a light-shielding fence, and the light-shielding fence is disposed around the light conversion unit.

[0013] In some embodiments, each of the transfer components includes a plurality of the light-emitting elements. The light conversion units of some of the light-emitting elements are first wavelength conversion units, and the light conversion units of some of the light-emitting elements are second wavelength conversion units. The first wavelength conversion unit is configured to convert the first color light into second color light, and the second wavelength conversion unit is configured to convert the first color light into third color light.

[0014] In some embodiments, each of the transfer components further includes:

[0015] An optical layer is disposed on the light conversion unit, and the optical layer is configured to transmit only the light converted by the light conversion unit.

[0016] In some embodiments, the optical layer includes a first light filtering unit configured to transmit the second color light and filter other color lights, and a second light filtering unit configured to transmit the third color light and filter other color lights; or,

[0017] The optical layer includes a first transmission and reflection unit configured to transmit the second color light and reflect the first color light, and a second transmission and reflection unit configured to transmit the second color light and reflect the first color light.

[0018] In some embodiments, in each of the transfer components, the light conversion units of some of the light-emitting elements are third wavelength conversion units, and the third wavelength conversion units are configured to convert the first color light into fourth color light; or,

[0019] In each of the transfer components, the light conversion units of some of the light-emitting elements are transparent units, and the transparent units are configured to transmit the first color light.

[0020] In a second aspect, an embodiment of the present application provides a method for manufacturing a microdisplay chip, including:

[0021] Providing a driving substrate;

[0022] Forming a plurality of transfer components arranged in an array on the driving substrate by mass transfer. Each of the transfer components includes at least one light-emitting element. The light-emitting element includes a light-emitting unit, a first substrate disposed on the light-emitting unit, and a light conversion unit disposed on the first substrate. Each of the light-emitting units can be independently driven by the driving substrate and emits first color light.

[0023] In some embodiments, forming a plurality of the transfer components arranged in an array on the driving substrate by mass transfer includes:

[0024] Form a plurality of the light-emitting units spaced apart from each other on the first substrate, the first substrate having a first surface facing away from the light-emitting units;

[0025] Form a plurality of the light conversion units spaced apart from each other on the second substrate;

[0026] Bond the first surface to a side of the light conversion unit facing away from the second substrate to form a bonding structure, in the bonding structure, each of the light-emitting units is correspondingly arranged with one of the light conversion units;

[0027] Cut the bonding structure, and transfer the cut structure in a large quantity onto the driving substrate to form a plurality of the transferred components arranged in an array on the driving substrate.

[0028] In some embodiments, after forming a plurality of the light conversion units spaced apart from each other on the second substrate, it further includes:

[0029] Form a plurality of light-blocking fences on the second substrate, and arrange the light-blocking fences to surround the light conversion units.

[0030] In some embodiments, forming a plurality of the light conversion units spaced apart from each other on the second substrate includes:

[0031] First, form an optical layer on the second substrate, and then form a plurality of the light conversion units, such that the optical layer is disposed between a part of the light conversion units and the second substrate, and the optical layer is used for transmitting only the light converted by the light conversion units.

[0032] Advantageous effects: The microdisplay chip according to the embodiments of the present application significantly improves the overall structural strength of the light-emitting element by providing a first substrate in the light-emitting element and placing it between the light-emitting unit and the light conversion unit. On the one hand, the first substrate provides mechanical support for the light-emitting unit and the light conversion unit, reduces stress damage during the mass transfer process, and on the other hand, reduces the influence of thermal stress on the stacked structure by optimizing the interface bonding. Thereby, the compressive resistance and reliability of the light-emitting element are greatly improved, thereby improving the manufacturing yield of the microdisplay chip; at the same time, the introduction of the first substrate can also isolate the optical and thermal crosstalk between the light-emitting unit and the light conversion unit, enhance the light conversion efficiency and color consistency, and finally achieve the performance of the microdisplay chip with high stability and high resolution. Description of the Drawings

[0033] To more clearly illustrate the technical solutions in this application, the following will briefly introduce the accompanying drawings required for the description of the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of this application. For those skilled in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.

[0034] Figure 1 Schematic diagram of the front view structure of the microdisplay chip provided by some embodiments of this application;

[0035] Figure 2 For Figure 1 Schematic diagram of the sectional view of the microdisplay chip in along line A-A;

[0036] Figure 3 For Figure 1 Schematic diagram of the sectional view of the microdisplay chip in along line B-B;

[0037] Figure 4 For Figure 1 Schematic diagram of the sectional view of the microdisplay chip in along line C-C;

[0038] Figure 5 Schematic diagram of the front view structure of the microdisplay chip provided by some other embodiments of this application;

[0039] Figure 6 For Figure 5 Schematic diagram of a sectional view of the microdisplay chip in along line D-D;

[0040] Figure 7 For Figure 5 Schematic diagram of another sectional view of the microdisplay chip in along line D-D;

[0041] Figure 8 Schematic diagram of the front view structure of the microdisplay chip provided by some other embodiments of this application;

[0042] Figure 9 For Figure 8 Schematic diagram of the sectional view of the microdisplay chip in along line E-E;

[0043] Figure 10 Schematic diagram of the first structure of the microdisplay chip provided by the embodiments of this application during the preparation process;

[0044] Figure 11 Schematic diagram of the second structure of the microdisplay chip provided by the embodiments of this application during the preparation process;

[0045] Figure 12 Schematic diagram of the third structure of the microdisplay chip provided by the embodiments of this application during the preparation process;

[0046] Figure 13 The fourth schematic structural diagram of the microdisplay chip provided by the embodiment of the present application during the manufacturing process;

[0047] Figure 14 The fifth schematic structural diagram of the microdisplay chip provided by the embodiment of the present application during the manufacturing process;

[0048] Figure 15 The sixth schematic structural diagram of the microdisplay chip provided by the embodiment of the present application during the manufacturing process;

[0049] Figure 16 The seventh schematic structural diagram of the microdisplay chip provided by the embodiment of the present application during the manufacturing process;

[0050] Figure 17 The eighth schematic structural diagram of the microdisplay chip provided by the embodiment of the present application during the manufacturing process;

[0051] Figure 18 The ninth schematic structural diagram of the microdisplay chip provided by the embodiment of the present application during the manufacturing process;

[0052] Figure 19 A schematic diagram of a cutting method of the microdisplay chip provided by the embodiment of the present application during the manufacturing process;

[0053] Figure 20 Another schematic diagram of a cutting method of the microdisplay chip provided by the embodiment of the present application during the manufacturing process;

[0054] Figure 21 A schematic diagram of a partial cross-sectional structure of the microdisplay chip provided by another embodiment of the present application;

[0055] Reference numerals: 100 - driving substrate; 110 - control module; 111 - control circuit; 1111 - first terminal; 1112 - second terminal; 1113 - first welding part; 1114 - second welding part; 200 - transfer component; 210 - light-emitting element; 211 - light-emitting unit; 212 - first substrate; 2121 - first surface; 213 - light conversion unit; 2131 - first wavelength conversion unit; 2132 - second wavelength conversion unit; 2133 - third wavelength conversion unit; 2134 - transparent unit; 214 - second substrate; 215 - light-blocking fence; 216 - first filter unit; 217 - second filter unit; 218 - first transmission-reflection unit; 219 - second transmission-reflection unit; 220 - light-emitting material layer; 221 - intermediate; 2110 - step structure; 2113 - first doped semiconductor layer; 2114 - active layer; 2115 - second doped semiconductor layer; 2116 - light-emitting surface; 230 - anti-crosstalk material; 240 - bonding structure; 250 - optical layer; 300 - anti-crosstalk layer. Detailed implementation manners

[0056] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part rather than all of the embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts shall fall within the protection scope of the present application.

[0057] In the description of the present application, it should be understood that the orientation or positional relationship indicated by terms such as "thickness", "upper", "lower", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application. In the description of the present application, "a plurality of" means two or more, and "at least one" means one, two or more, unless otherwise specifically defined.

[0058] In the description of the present application, the meanings of "on", "above" and "over" should be interpreted in the broadest sense, so that "on" not only means "directly on something", but also means "on something" including intermediate components or layers therebetween, and "above" or "over" not only means "above" or "over" something, but also includes "above" or "over" something without intermediate components or layers therebetween.

[0059] In addition, for the convenience of description, the present application may also use spatial relative terms such as "under", "below", "lower part", "above", "upper part", etc. to describe the relationship between one element or component and another element or component shown in the drawings. In addition to the orientation described in the drawings, the spatial relative terms are also intended to cover different orientations during the use or operation of the device. The device may be oriented in other ways, rotated 90° or in other orientations, and the spatial relative descriptive terms used in the present application may be interpreted accordingly in the same way.

[0060] As used herein, the term "layer" refers to a portion of a material that includes a region having a certain thickness. A layer may extend over the entire underlying or overlying structure, or may have a scope smaller than that of the underlying or overlying structure. In addition, a layer may be a region of a homogeneous or heterogeneous continuous structure, the thickness of which is less than the thickness of the continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure or between any pair of horizontal planes therebetween. A layer may extend horizontally, vertically, and / or along a conical surface. A layer may include a plurality of layers. For example, a semiconductor layer may include one or more doped or undoped semiconductor layers and may have the same or different materials.

[0061] As a prelude to this application, a Micro-LED microdisplay chip is first introduced. It adopts a scheme of integrating a light-emitting unit and a driving substrate. The interface structure between the light-emitting unit and the light conversion layer is weak, and problems such as fracture and delamination are likely to occur due to mechanical stress during the mass transfer or packaging process. In addition, the stacking of the light conversion unit and the light-emitting unit lacks effective support, which not only affects the structural stability of the chip, but also causes reliability risks due to the mismatch of the thermal expansion coefficients, ultimately resulting in a low device yield and limited lifespan, restricting the high-density integration and large-scale application of the microdisplay chip.

[0062] In view of this, embodiments of this application provide a microdisplay chip and a method for manufacturing the same, aiming to solve at least one of the above technical problems. The microdisplay chip of the embodiments of this application can be one of LED, Mini-LED, and Micro-LED.

[0063] Please refer to Figure 1 , a microdisplay chip according to an embodiment of this application includes: a driving substrate 100 and a plurality of transfer components 200. The plurality of transfer components 200 are arranged in an array on the driving substrate 100, and each transfer component 200 includes at least one light-emitting element 210. Figure 1 In the illustrated embodiment, each transfer component 200 includes three light-emitting elements 210, which are arranged in a triangle and are respectively of three colors: R, G, and B. In other embodiments, each transfer component 200 may further include four light-emitting elements 210, which are respectively R, G, G, and B. In addition, the full-color pixel arrangement may also be horizontal RGB, diagonal RGB, triangular RGB, not limited to one arrangement combination. Or, in some embodiments, each transfer component 200 includes only one light-emitting element 210, and full-color display is achieved through the light-emitting elements 210 of the plurality of transfer components 200.

[0064] Please refer to Figure 2, the light-emitting element 210 includes a light-emitting unit 211, a first substrate 212 disposed on the light-emitting unit 211, and a light conversion unit 213 disposed on the first substrate 212. Each light-emitting unit 211 can be individually driven by the driving substrate 100 and emit first-color light.

[0065] In some embodiments, the driving substrate 100 may include semiconductor materials such as silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, and cobalt phosphide; or it may be made of non-conductive materials such as glass, plastic, or a sapphire wafer. The driving substrate 100 may be a CMOS (Complementary Metal Oxide Semiconductor) backplane or a TFT glass substrate. A first terminal 1111 and a second terminal 1112 may be disposed thereon for connecting to the light-emitting unit 211 to individually drive the light-emitting unit 211.

[0066] In some embodiments, the light-emitting unit 211 is a Micro-LED unit. Please refer to Figure 12 As shown, the Micro-LED unit has a stepped structure 2110. The stepped structure 2110 includes a first doped semiconductor layer 2113, an active layer 2114, and a second doped semiconductor layer 2115. The active layer 2114 is disposed between the first doped semiconductor layer 2113 and the second doped semiconductor layer 2115. The first doped semiconductor layer 2113 is provided with a first electrode 2111, and the first electrode 2111 is connected to the first terminal 1111 of the driving substrate 100 through a first welding portion 1113; the second doped semiconductor layer 2115 is provided with a second electrode 2112, and the second electrode 2112 is connected to the second terminal 1112 of the driving substrate 100 through a second welding portion 1114; thus, the light-emitting unit 211 can be individually driven by the driving substrate 100 and emit first-color light.

[0067] The first substrate 212 is an LED epitaxial substrate. The light-emitting unit 211 is formed on the first substrate 212. The first substrate 212 is connected between the light-emitting unit 211 and the light conversion unit 213, strengthening the interface structure between the light-emitting unit 211 and the light conversion unit 213 and providing mechanical support for the light-emitting unit 211 and the light conversion unit 213. The first substrate 212 is transferred together with the light-emitting unit 211 and the light conversion unit 213, which can reduce stress damage during the transfer process. Optionally, the first substrate 212 can be made of sapphire substrate material, optimizing the material selection and interface bonding, reducing the influence of thermal stress on the stacked structure of the light-emitting unit 211 and the light conversion unit 213, thereby greatly improving the compressive resistance and reliability of the light-emitting element 210 and enhancing the preparation yield of the microdisplay chip. In addition, the first substrate 212 can also isolate the optical and thermal crosstalk between the light-emitting unit 211 and the light conversion unit 213, enhance the light conversion efficiency and color consistency, and finally achieve the performance of a microdisplay chip with high stability and high resolution.

[0068] In Figure 1 In an exemplary embodiment shown, each transfer component 200 includes three light-emitting elements 210, arranged in a triangular pattern, which are light-emitting elements 210 of three colors, namely R, G, and B. Figure 2 , Figure 3 , Figure 4 Respectively show cross-sectional views along different line segments in Figure 1 . It can be seen that the light conversion unit 213 of one of the light-emitting elements 210 is the first wavelength conversion unit 2131, and the light conversion unit 213 of another light-emitting element 210 is the second wavelength conversion unit 2132. The first wavelength conversion unit 2131 is used to convert the first color light into the second color light, and the second wavelength conversion unit 2132 is used to convert the first color light into the third color light. The light conversion unit 213 of the remaining one of the three light-emitting elements 210 can be the third wavelength conversion unit 2133, or can be a transparent unit 2134 as shown in Figure 21 .

[0069] Optionally, when the first color light can be white light or ultraviolet light, one of the second color light and the third color light is red light, and the other is green light. The light conversion unit 213 of the remaining one of the three light-emitting elements 210 is the third wavelength conversion unit 2133, and the third wavelength conversion unit 2133 is used to convert the first color light into the fourth color light, and the fourth color light is blue light.

[0070] Optionally, the light-emitting unit 211 can be made of a blue light-emitting material, that is, the first color light is blue light. One of the second color light and the third color light is red light, and the other is green light. The light conversion unit 213 of the remaining one of the three light-emitting elements 210 is a transparent unit 2134, and the transparent unit 2134 can transmit the first color light, that is, transmit blue light. Thus, the three light-emitting elements 210 in each transfer component 200 can emit R, G, and B three-color light, realizing full-color display of a single transfer component 200.

[0071] In addition, please refer to Figure 2 , each transfer component 200 further includes an optical layer 250, and the optical layer 250 is disposed on the light conversion unit 213. The optical layer 250 is used to transmit only the light converted by the light conversion unit 213. Thereby, the light efficiency is further improved and the display effect is enhanced.

[0072] As Figure 2 shown, the optical layer 250 includes a first filter unit 216 for transmitting the second color light and filtering other color lights, and a second filter unit 217 for transmitting the third color light and filtering other color lights. Specifically, the first filter unit 216 and the second filter unit 217 can adopt color filters.

[0073] In Figure 5 an exemplary embodiment shown, each transfer component 200 includes three light-emitting elements 210, which are arranged in a straight line and are R, G, and B three-color light-emitting elements 210 respectively. Please refer to Figure 6 and Figure 21 , wherein the light conversion unit 213 in each light-emitting element 210 can be arranged in the same manner as in the above embodiment and will not be described herein again, and full-color display of a single transfer component 200 can also be realized. In this embodiment, the optical layer 250 includes a first transmission and reflection unit 218 for transmitting the second color light and reflecting the first color light, and a second transmission and reflection unit 219 for transmitting the second color light and reflecting the first color light. Specifically, the first transmission and reflection unit 218 and the second transmission and reflection unit 219 can adopt DBR (Distributed Bragg Reflector).

[0074] It can be understood that although not shown in the figure, in some other embodiments, each transfer component 200 may include four light-emitting elements 210, which may be arranged in a straight line or a rectangle and are R, G, G, and B light-emitting elements 210 respectively.

[0075] As Figure 1 and Figure 5As shown, in some embodiments, the driving substrate 100 includes a plurality of control modules 110 arranged in an array, and each control module 110 is provided with a plurality of control circuits 111. Each control module 110 is correspondingly arranged with a transfer component 200, and each light-emitting element 210 of the transfer component 200 is electrically connected to the control module 110 through a control circuit 111. Thus, each control module 110 can control a plurality of light-emitting elements 210 in a transfer component 200, realizing full-color display with independent control of a single light-emitting element 210 in the transfer component 200, and further improving the display effect.

[0076] Optionally, the light-emitting element 210 further includes a second substrate 214, and the second substrate 214 is disposed on the light conversion unit 213. The second substrate 214 can be a glass sheet, sapphire or high-transparency material substrate structure used when preparing the light conversion unit 213. Transferring it together with the light conversion unit 213 can further improve the structural strength of the light-emitting element 210, and improve stability and reliability.

[0077] Please refer to again Figure 2 、 Figure 3 、 Figure 4 and Figure 6 In some embodiments, a plurality of light-emitting elements 210 in each transfer component 200 are arranged at intervals. That is to say, in each transfer component 200, the light-emitting units 211 of two adjacent light-emitting elements 210 are spaced apart from each other, the first substrates 212 are spaced apart from each other, the light conversion units 213 are spaced apart from each other, and the second substrates 214 are spaced apart from each other. By arranging the light-emitting elements 210 in a spaced-apart structure, during the manufacturing process, when pixel cutting is performed, it can be divided into single light-emitting elements 210, and then the massive transfer technology can be adapted to different color single light-emitting elements 210. Such an arrangement makes it easier for pixels to be arranged in the required layout form, improving the display effect.

[0078] Please refer to Figure 7 In some embodiments, the first substrates 212 of a plurality of light-emitting elements 210 in each transfer component 200 are of an integral structure, and the second substrates 214 are of an integral structure. That is to say, in each transfer component 200, two adjacent light-emitting elements 210 share the entire first substrate 212 and the second substrate 214. On the one hand, this can improve the integrity of the structure, thereby further improving the strength and stability of the structure. On the other hand, during the manufacturing process, multiple light-emitting elements 210 can be cut and transferred together, improving production efficiency.

[0079] Please refer to Figure 8 and Figure 9In some embodiments, the micro display chip further includes an anti-crosstalk layer 300, at least part of which is located in the gap between adjacent transfer components 200 to isolate adjacent transfer components 200. By setting the anti-crosstalk layer 300, it is possible to prevent cross-color between pixels and improve the display effect. The anti-crosstalk layer 300 can be a Grid metal grid provided by the drive substrate 100, or it can be a photolithography-filled anti-cross-light material prepared as a whole after mass transfer.

[0080] See also Figure 9 In some embodiments, the light emitting element 210 further includes a light blocking fence 215, and the light blocking fence 215 is arranged around the light conversion unit 213. By setting the light blocking fence 215, the anti-cross-light effect of the light emitting element 210 is further improved, the light effect is improved, and the display effect is enhanced.

[0081] like Figure 2 As shown, in some embodiments, the light emitting unit 211 has a light emitting surface 2116, and the orthographic projection of the light conversion unit 213 on the light emitting unit 211 covers the light emitting surface 2116. In other words, the size L1 of the light conversion unit 213 is larger than the size L2 of the light emitting unit 211, which ensures the light conversion efficiency and enhances the display effect.

[0082] Accordingly, an embodiment of the present application provides a method for preparing a micro display chip, comprising:

[0083] Providing a driving substrate 100;

[0084] A plurality of transfer components 200 arranged in an array are formed on the driving substrate 100 through mass transfer, each transfer component 200 includes at least one light-emitting element 210, the light-emitting element 210 includes a light-emitting unit 211, a first substrate 212 arranged on the light-emitting unit 211, and a light conversion unit 213 arranged on the first substrate 212, each light-emitting unit 211 can be driven individually by the driving substrate 100 and emit a first color light.

[0085] This preparation method can be used to prepare a single full-color display LED, and by setting a suitable alignment accuracy, the size of the light-emitting element 210 can be controlled to the micron level of Micro-LED.

[0086] Specifically, the preparation method can adopt QD process + LED process + mass transfer process.

[0087] The plurality of transfer components 200 arranged in an array are formed on the driving substrate 100 by mass transfer, including:

[0088] A plurality of light emitting units 211 spaced apart from each other are formed on a first substrate 212 , and the first substrate 212 has a first surface 2121 facing away from the light emitting units 211 ;

[0089] Form a plurality of light conversion units 213 spaced apart from each other on the second substrate 214;

[0090] Bond the first surface 2121 to the side of the light conversion unit 213 facing away from the second substrate 214 to form a bonding structure 240. In the bonding structure 240, each light-emitting unit 211 is correspondingly arranged with a light conversion unit 213;

[0091] Cut the bonding structure 240 and transfer the cut structure in a large quantity to the driving substrate 100 to form a plurality of transfer components 200 arranged in an array on the driving substrate 100.

[0092] In an exemplary embodiment, forming a plurality of light-emitting units 211 spaced apart from each other on the first substrate 212 specifically adopts a flip-chip LED process to form an LED structure, including:

[0093] As Figure 10 shown, form a light-emitting material layer 220 on the first substrate 212 made of sapphire. The light-emitting material layer 220 can be formed by using a blue light-emitting material. As Figure 11 and Figure 12 shown, prepare an intermediate 221 on the light-emitting material layer 220 by photolithography, and then form a step structure 2110 on the intermediate 221. As Figure 13 , in the formed LED light-emitting unit 211, both the first electrode 2111 and the second electrode 2112 are arranged facing the same side. They can be in the same plane, or when in different planes, the second electrode 2112 can be integrally connected together.

[0094] Forming a plurality of light conversion units 213 spaced apart from each other on the second substrate 214 includes:

[0095] As Figure 14 shown, first use a glass sheet, sapphire or high-transparency material as the second substrate 214, and form an optical layer 250 on the second substrate 214. The optical layer 250 is used to only transmit the light converted by the light conversion unit 213. Specifically, form the above optical layer 250 by forming a first filter unit 216 and a second filter unit 217 spaced apart from each other on the second substrate 214.

[0096] As Figure 15As shown, a plurality of mutually spaced light conversion units 213 are then formed. Some of the light conversion units 213 are disposed on the optical layer 250, and the other part is directly disposed on the second substrate 214. Among the light conversion units 213, some are first wavelength conversion units 2131, some are second wavelength conversion units 2132, and the remaining part is third wavelength conversion units 2133 or transparent units 2134 (which can be selected according to the situation of the first color light emitted by the light emitting unit 211).

[0097] As Figure 16 and Figure 17 shown, a crosstalk prevention material 230 is covered on the light conversion units 213, and then a plurality of light blocking fences 215 are formed by means such as photolithography, so that each light blocking fence 215 surrounds a light conversion unit 213.

[0098] Alternatively, a plurality of light blocking fences 215 can be prepared first, and then light conversion units 213 can be prepared within each light blocking fence 215.

[0099] As Figure 18 shown, the LED and QD patterns are aligned and bonded to achieve light emission of different colors. That is, the first surface 2121 of the first substrate 212 is bonded to the side of the light conversion unit 213 facing away from the second substrate 214 to form a bonding structure 240. In the bonding structure 240, each light emitting unit 211 is correspondingly disposed with a light conversion unit 213.

[0100] As Figure 19 and Figure 20 , different dicing methods are used to perform pixel cutting on the whole. The cutting methods used include diamond knife cutting and laser cutting, and among them, laser cutting can be combined with a fixed separator for pixel separation. The cutting can be performed by single-piece cutting or multi-piece cutting together.

[0101] As Figure 19 shown, the bonding structure 240 is cut into a plurality of independent transfer components 200. Each transfer component 200 includes a plurality of light emitting elements 210. The plurality of independent transfer components 200 are transferred in a large amount onto the driving substrate 100 so that they are arranged in an array on the driving substrate 100 to form Figure 5 the microdisplay chip structure shown.

[0102] As Figure 20 shown, the bonding structure 240 is cut into a plurality of mutually independent light emitting elements 210. The plurality of mutually independent light emitting elements 210 are transferred in a large amount onto the driving substrate 100 to form a plurality of transfer components 200 arranged in an array on the driving substrate 100, forming Figure 1 the microdisplay chip structure shown.

[0103] In some embodiments, after forming a plurality of transfer components 200 arranged in an array on the driving substrate 100 through massive transfer, the method further includes: forming a crosstalk prevention layer 300, and disposing at least a part of the crosstalk prevention layer 300 in the gap between adjacent transfer components 200 to isolate the adjacent transfer components 200.

[0104] In the above embodiments, the descriptions of the respective embodiments have their own emphases. For parts not detailed in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.

[0105] The above has introduced in detail the microdisplay chip and its manufacturing method provided by the embodiments of the present application, and specific examples have been used to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the technical solution and its core idea of the present application; those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A microdisplay chip, characterized in that, Comprising: A driving substrate; A plurality of transfer components, arranged in an array on the driving substrate, each of the transfer components including at least one light-emitting element, the light-emitting element including a light-emitting unit, a first substrate disposed on the light-emitting unit, and a light conversion unit disposed on the first substrate, each of the light-emitting units being capable of being individually driven by the driving substrate and emitting a first color light.

2. The microdisplay chip according to claim 1, wherein The light-emitting element further includes a second substrate, the second substrate being disposed on the light conversion unit.

3. The microdisplay chip according to claim 2, characterized in that, Each of the transfer components includes a plurality of the light-emitting elements, and the plurality of light-emitting elements are spaced apart from each other.

4. The microdisplay chip according to claim 2, wherein Each of the transfer components includes a plurality of the light-emitting elements, and the first substrates of the plurality of light-emitting elements are an integral structure, and the second substrates are an integral structure.

5. The microdisplay chip according to claim 1, characterized in that, The microdisplay chip further includes: An anti-crosstalk layer, at least a part of the anti-crosstalk layer being located in a gap between adjacent transfer components to isolate adjacent transfer components.

6. The microdisplay chip according to claim 1, characterized in that, The light-emitting element further includes a light-blocking fence, the light-blocking fence being disposed around the light conversion unit.

7. The microdisplay chip according to claim 1, characterized in that, Each of the transfer components includes a plurality of the light-emitting elements, the light conversion units of some of the light-emitting elements being a first wavelength conversion unit, and the light conversion units of some of the light-emitting elements being a second wavelength conversion unit, the first wavelength conversion unit being configured to convert the first color light into a second color light, and the second wavelength conversion unit being configured to convert the first color light into a third color light.

8. The microdisplay chip according to claim 7, characterized in that, Each of the transfer components further includes: An optical layer, disposed on the light conversion unit, the optical layer being configured to transmit only the light converted by the light conversion unit.

9. The microdisplay chip according to claim 8, characterized in that, The optical layer includes a first light filtering unit configured to transmit the second color light and filter other color lights, and a second light filtering unit configured to transmit the third color light and filter other color lights; Alternatively, the optical layer includes a first transmission-reflection unit configured to transmit the second color light and reflect the first color light, and a second transmission-reflection unit configured to transmit the second color light and reflect the first color light.

10. The microdisplay chip according to claim 7, wherein, In each of the transfer components, the light conversion units of some of the light-emitting elements are a third wavelength conversion unit, the third wavelength conversion unit being configured to convert the first color light into a fourth color light; Alternatively, in each of the transfer components, the light conversion units of some of the light-emitting elements are transparent units, the transparent units being configured to transmit the first color light.

11. A method for preparing a microdisplay chip, characterized in that, Comprising: Providing a driving substrate; Forming, by mass transfer, a plurality of transfer components arranged in an array on the driving substrate, each of the transfer components including at least one light-emitting element, the light-emitting element including a light-emitting unit, a first substrate disposed on the light-emitting unit, and a light conversion unit disposed on the first substrate, each of the light-emitting units being capable of being individually driven by the driving substrate and emitting a first color light.

12. The manufacturing method of the microdisplay chip according to claim 11, characterized in that, Forming, by mass transfer, a plurality of the transfer components arranged in an array on the driving substrate, including: Forming a plurality of the light-emitting units spaced apart from each other on the first substrate, the first substrate having a first surface facing away from the light-emitting units; Form a plurality of the light conversion units spaced apart from each other on the second substrate; Bond the first surface to a side of the light conversion unit facing away from the second substrate to form a bonding structure, in which each of the light emitting units is correspondingly arranged with one of the light conversion units; Cut the bonding structure and transfer the cut structure in a mass to the driving substrate to form a plurality of the transferred components arranged in an array on the driving substrate.

13. The manufacturing method of the microdisplay chip according to claim 12, wherein, After forming a plurality of the light conversion units spaced apart from each other on the second substrate, further comprising: Form a plurality of light blocking fences on the second substrate, and surround the light conversion units with the light blocking fences.

14. The method for manufacturing a microdisplay chip according to claim 12, wherein Form a plurality of the light conversion units spaced apart from each other on the second substrate, including: First form an optical layer on the second substrate, and then form a plurality of the light conversion units, such that the optical layer is disposed between a part of the light conversion units and the second substrate, and the optical layer is configured to transmit only the light converted by the light conversion units.

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