Silicon precursor compound having asymmetric structure, method for preparing same, and method for preparing silicon-containing thin film

Abstract

The present invention relates to a silicon precursor compound of an asymmetric structure containing an alkoxide capable of preparing a high-quality silicon-containing thin film, a method for preparing the same, and a method for preparing a silicon-containing thin film using the silicon precursor compound of an asymmetric structure containing an alkoxide.

Description

Technical Field

[0001] The present invention relates to a silicon precursor compound having an asymmetric structure containing an alkoxide, a method for preparing the same, and a method for preparing a silicon-containing thin film using the silicon precursor compound. Background Art

[0002] Silicon-containing thin films are used as semiconductor substrates, diffusion masks, antioxidant films, and dielectric films in semiconductor technology, for example, in microelectronic devices such as RAM (memory and logic chips), flat panel displays including thin film transistors (TFTs), and solar energy.

[0003] In particular, depending on the high integration of semiconductor devices, silicon-containing thin films with various properties are required. Since the aspect ratio increases as the high integration of semiconductor devices increases, there is a problem that depositing a silicon-containing thin film using a conventional precursor cannot satisfy the required properties.

[0004] For highly integrated semiconductor devices using a conventional precursor for thin film deposition, it is difficult to achieve excellent step coverage and thickness control. There is also a problem of containing impurities in the thin film.

[0005] Therefore, it is necessary to develop various silicon precursor compounds depending on physical and chemical properties as silicon precursors necessary for forming high-quality silicon-containing films.

[0006] [Prior Art Documents]

[0007] [Patent Documents]

[0008] Korean Patent Laid-Open Publication No. 2011-0017404 Summary of the Invention

[0009] Technical Problem

[0010] An object of the present invention is to provide a novel silicon precursor compound having an asymmetric structure containing an alkoxide and a method for preparing the same, which can prepare a silicon-containing thin film with excellent quality.

[0011] In addition, another object is to provide a method for preparing a silicon-containing thin film using the novel silicon precursor compound having an asymmetric structure containing an alkoxide.

[0012] Technical Solution

[0013] The silicon precursor compound of the present invention for achieving the above object is characterized in that it is represented by the following formula 1.

[0014] [Formula 1]

[0015]

[0016] In Formula 1, n is 1 or 2; R1 is selected from a linear or branched, saturated or unsaturated hydrocarbon group having 1 to 4 carbon atoms, its isomers, and NR 7 R 8 wherein any one of them; R 2 and R 3 are each independently selected from hydrogen (H), chlorine (Cl), methyl (Me), methoxy (MeO), ethoxy (EtO), n-propoxy, isopropoxy ( iso PrO), n-butoxy, isobutoxy ( iso BuO), sec-butoxy ( sec BuO), tert-butoxy ( tert BuO), and NR 7 R 8 wherein any one of them; R 4 is a linear or branched, saturated or unsaturated hydrocarbon group or its isomer; R 5 is selected from methyl (Me), ethyl (Et), isopropyl ( iso Pr), SiMe3, SiHMe2, SiH2Me, SiH3, SiHClMe, SiHCl2, SiMe2CH2CH3, SiMe2CH═CH2, and SiHMeCH═CH2; and in NR 7 R 8 the R 7 and R 8 are each independently selected from methyl (Me), ethyl (Et), and isopropyl ( iso Pr). In the silicon precursor compound of the present invention, R 4 and R 5 can be different from each other. Preferably, R 4 and R 5 are different from each other.

[0017] The silicon precursor compound of the present invention is preferably selected from the group consisting of the following compounds (1) to (56).

[0018]

[0019]

[0020]

[0021]

[0022] The method for preparing the silicon precursor compound of the present invention for achieving another purpose may include reacting an alkoxide compound with a secondary amine or reacting an alkoxide compound with an alkylaminosilane to prepare the silicon precursor compound represented by Formula 1.

[0023] The alkoxide compound is preferably a compound represented by the following formula 4.

[0024] [Formula 4]

[0025]

[0026] In formula 4, n is 1 or 2; R 1 is any one selected from linear or branched, saturated or unsaturated hydrocarbon groups having 1 to 4 carbon atoms and their isomers and NR 7 R 8 ; R 2 and R 3 are each independently selected from hydrogen (H), chlorine (Cl), methyl (Me), methoxy (MeO), ethoxy (EtO), n-propoxy, isopropoxy ( iso PrO), n-butoxy, isobutoxy ( iso BuO), sec-butoxy ( sec BuO), tert-butoxy ( tert BuO) and NR 7 R 8 . In NR 7 R 8 , R 7 and R 8 are each independently selected from methyl (Me), ethyl (Et) and isopropyl ( iso Pr).

[0027] In the method for preparing a silicon precursor compound, the reaction of an alkoxide compound with a secondary amine can prepare a silicon precursor compound represented by the following formula 8.

[0028] [Formula 8]

[0029]

[0030] In formula 8, R 1 is any one selected from linear or branched, saturated or unsaturated hydrocarbon groups having 1 to 4 carbon atoms and their isomers and NR 7 R 8 ; R 3 is selected from hydrogen (H), chlorine (Cl), methyl (Me), methoxy (MeO), ethoxy (EtO), n-propoxy, isopropoxy ( iso PrO), n-butoxy, isobutoxy ( iso BuO), sec-butoxy ( sec BuO), tert-butoxy ( tert BuO) and NR 7 R 8 ; R 4 is a linear or branched, saturated or unsaturated hydrocarbon group or its isomer; R5 is any one selected from methyl (Me), ethyl (Et), isopropyl ( iso Pr), SiMe3, SiHMe2, SiH2Me, SiH3, SiHClMe, SiHCl2, SiMe2CH2CH3, SiMe2CH═CH2, and SiHMeCH═CH2; and R in NR 7 R 8 in 7 and R 8 are each any one selected from methyl (Me), ethyl (Et), and isopropyl ( iso Pr).

[0031] In the method for preparing a silicon precursor compound, the reaction of an alkoxide compound with an alkylaminosilane can prepare a silicon precursor compound represented by the following formula 15 or formula 18.

[0032] [Formula 15]

[0033]

[0034] [Formula 18]

[0035]

[0036] In formula 15 or formula 18, R 1 is any one selected from linear or branched, saturated or unsaturated hydrocarbon groups having 1 to 4 carbon atoms, their isomers, and NR 7 R 8 ; R 2 , R 2' , R 3 , and R 3' are each any one selected from hydrogen (H), chlorine (Cl), methyl (Me), methoxy (MeO), ethoxy (EtO), n-propoxy, isopropoxy ( iso PrO), n-butoxy, isobutoxy ( iso BuO), sec-butoxy ( sec BuO), tert-butoxy ( tert BuO), and NR 7 R 8 ; R 0 is a linear or branched, saturated or unsaturated hydrocarbon group or its isomer; R 9 , R 10 , and R 11 are each any one selected from hydrogen (H), chlorine (Cl), methyl group (Me), ethyl group (CH2CH3), and vinyl group (CH═CH2); and R 7 R 8 in NR 7 and R8 Each is any one selected from methyl (Me), ethyl (Et), and isopropyl ( iso Pr).

[0037] The silicon precursor compound of Formula 1 prepared by the method for preparing a silicon precursor compound according to the present invention is at least one selected from Compounds (1) to (56).

[0038] To achieve another object, the method for preparing a silicon-containing thin film according to the present invention can use the silicon precursor compound represented by Formula 1 to form a silicon-containing thin film.

[0039] In the method for preparing a silicon-containing thin film according to the present invention, the silicon precursor compound is at least one selected from Compounds (1) to (56).

[0040] In the method for preparing a silicon-containing thin film according to the present invention, the silicon-containing thin film can be deposited by chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), or atomic layer deposition (ALD).

[0041] Advantages of the Present Invention

[0042] The silicon precursor compound of the present invention exhibits sufficient volatility and can be applied to all of atomic layer deposition (ALD), plasma-enhanced chemical vapor deposition (PECVD), and chemical vapor deposition (CVD) for preparing a silicon-containing thin film. In particular, deposition can be carried out at a high deposition rate even at high temperatures, so that a silicon-containing thin film with excellent quality can be prepared.

[0043] However, the effects of the present invention are not limited to the above effects. Description of the Drawings

[0044] Figure 1 Shows the hydrogen nuclear magnetic resonance ( 1 H-NMR) spectrum of the silicon precursor compound prepared in Example 1 according to the present invention.

[0045] Figure 2 Shows the hydrogen nuclear magnetic resonance ( 1 H-NMR) spectrum of the silicon precursor compound prepared in Example 2 according to the present invention.

[0046] Figure 3 Shows the hydrogen nuclear magnetic resonance ( 1 H-NMR) spectrum of the silicon precursor compound prepared in Example 3 according to the present invention.

[0047] Figure 4 Shows the hydrogen nuclear magnetic resonance ( 1 H-NMR) spectrum of the silicon precursor compound prepared in Example 4 according to the present invention.

[0048] Figure 5Shows the hydrogen nuclear magnetic resonance ( 1 H-NMR) spectrum of the silicon precursor compound prepared according to Example 5 of the present invention.

[0049] Figure 6 Shows the hydrogen nuclear magnetic resonance ( 1 H-NMR) spectrum of the silicon precursor compound prepared according to Example 6 of the present invention.

[0050] Figure 7 Is a graph showing the results of thermogravimetric analysis (TGA) of the silicon precursor compound prepared according to the examples of the present invention.

[0051] Figure 8 Is a graph showing the results of measuring the vapor pressure of the silicon precursor compounds prepared according to Examples 2, 3, 5, and 6 of the present invention.

[0052] Figure 9 Is a graph showing the sequence of each pulse in the deposition process of the silicon oxide film.

[0053] Figure 10 Is the result of AES (Auger electron spectroscopy) analysis of the composition of the silicon oxide film deposited according to the present invention.

[0054] Figures 11 to 13 Is an image of the silicon oxide film deposited according to the present invention observed using a transmission electron microscope (TEM). Detailed Description

[0055] Hereinafter, the silicon precursor compound according to the present invention and its preparation method will be described in detail.

[0056] In this specification, the term "about" is intended to cover ±5% of the defined number.

[0057] The silicon precursor compound having an asymmetric structure containing an alkoxide according to the present invention can be represented by the following formula 1.

[0058] [Formula 1]

[0059]

[0060] In formula 1, n is 1 or 2; R 1 Is selected from a straight-chain or branched-chain, saturated or unsaturated hydrocarbon group having 1 to 4 carbon atoms and its isomers and NR 7 R 8 Of any one; R 2 And R 3 Are each selected from hydrogen (H), chlorine (Cl), methyl (Me), methoxy (MeO), ethoxy (EtO), n-propoxy, isopropoxy ( iso PrO), n-butoxy, isobutoxy ( isoBuO), sec-butoxy ( sec BuO), tert-butoxy ( tert BuO) and NR 7 R 8 any one of; R 4 is a straight-chain or branched-chain, saturated or unsaturated hydrocarbon group (e.g., having 1 to 6 carbon atoms) or its isomer; and R 5 is selected from methyl (Me), ethyl (Et), isopropyl ( iso Pr), SiMe3, SiHMe2, SiH2Me, SiH3, SiHClMe, SiHCl2, SiMe2CH2CH3, SiMe2CH=CH2 and SiHMeCH=CH2 any one of.

[0061] In NR 7 R 8 the R in 7 and R 8 each is selected from methyl (Me), ethyl (Et) and isopropyl ( iso Pr) any one of.

[0062] In R 1 and R 4 the hydrocarbon groups in can each independently be selected from methyl group (Me), ethyl group (Et), n-propyl group (Pr), isopropyl group ( iso Pr), n-butyl group (Bu), sec-butyl group ( sec Bu), isobutyl group ( iso Bu), tert-butyl group ( tert Bu) and its isomers any one of.

[0063] In the present invention, R 4 and R 5 can be different from each other, preferably, R 4 and R 5 are different from each other.

[0064] The alkoxide in the present invention is a compound in which the hydrogen (H) in the hydroxyl group (OH) of the alcohol is replaced by a metal. It is a silane oxide in which silicon (Si) is the replacing metal.

[0065] The silicon precursor compound of the present invention can be prepared by the methods shown in Reaction Scheme 1 and Reaction Scheme 2 below.

[0066] [Reaction Scheme 1]

[0067]

[0068] In the method for preparing a silicon precursor according to Reaction Scheme 1, an alkoxide compound reacts with a secondary amine to prepare a silicon precursor compound represented by Formula 1. It proceeds through a first step of reacting a chlorosilane compound represented by Formula 2 with an alcohol compound represented by Formula 3 to form an alkoxide compound; and a second step of reacting the alkoxide compound with a secondary amine represented by Formula 5 to prepare a silicon precursor compound represented by Formula 1.

[0069] As a specific example of Reaction Scheme 1, when n is 1 and R 2 is hydrogen (H), the silicon compound represented by Formula 8 can be prepared as shown in Reaction Scheme 2 below.

[0070] [Reaction Scheme 2]

[0071]

[0072] In Reaction Schemes 1 and 2, n is 1 or 2; R 1 is selected from a linear or branched, saturated or unsaturated hydrocarbon group having 1 to 4 carbon atoms, its isomers, and NR 7 R 8 ; R 2 and R 3 are each independently selected from hydrogen (H), chlorine (Cl), methyl (Me), methoxy (MeO), ethoxy (EtO), n-propoxy, isopropoxy ( iso PrO), n-butoxy, isobutoxy ( iso BuO), sec-butoxy ( sec BuO), tert-butoxy ( tert BuO), and NR 7 R 8 ; R 4 is a linear or branched, saturated or unsaturated hydrocarbon group (e.g., having 1 to 6 carbon atoms) or its isomers; and R 5 is selected from methyl (Me), ethyl (Et), isopropyl ( iso Pr), SiMe3, SiHMe2, SiH2Me, SiH3, SiHClMe, SiHCl2, SiMe2CH2CH3, SiMe2CH═CH2, and SiHMeCH═CH2.

[0073] In the method for preparing a silicon precursor according to Reaction Schemes 1 and 2, in the first step, the chlorosilane compound is reacted with the alcohol compound in a non-polar solvent at a low temperature of about -40 °C to carry out a substitution reaction of Cl with the alcohol compound, and then filtered and distilled under reduced pressure to form an alkoxide compound.

[0074] In the second step, the alkoxide compound formed in the first step is reacted with a secondary amine represented by Formula 5, and then the product salt and unreacted substances of the reactants are removed by filtration and distillation under reduced pressure to obtain a silicon precursor compound.

[0075] The silicon precursor compound of the present invention can be prepared by another method as shown in Reaction Schemes 3 and 4 below.

[0076] [Reaction Scheme 3]

[0077]

[0078] [Reaction Scheme 4]

[0079]

[0080] In the method for preparing a silicon precursor according to Reaction Schemes 3 and 4, an alkoxide compound is reacted with an alkylaminosilane to prepare a silicon precursor compound.

[0081] As shown in Reaction Scheme 4, it proceeds through a first step of reacting a chlorosilane compound represented by Formula 11 with a primary amine represented by Formula 12 to form an alkylaminosilane represented by Formula 13; a second step of reacting the alkylaminosilane with an alkyllithium (alkyl-Li) to form a lithium-containing alkylaminosilane represented by Formula 14; and a third step of reacting the compound of Formula 14 with the alkoxide compound of Formula 10 to prepare a silicon precursor compound represented by Formula 15.

[0082] As shown in Reaction Scheme 3, the alkoxide compound represented by Formula 10 can be formed by reacting a chlorosilane compound represented by Formula 9 with an alcohol compound represented by Formula 3.

[0083] Another method for preparing a silicon precursor compound is carried out in the same manner as in Reaction Scheme 4, except that the alkoxide compound used in Reaction Scheme 4 is a compound of Formula 17 prepared according to Reaction Scheme 5 below to prepare a silicon precursor compound of Formula 18 as shown in Reaction Scheme 6.

[0084] [Reaction Scheme 5]

[0085]

[0086] [Reaction Scheme 6]

[0087]

[0088] In Reaction Schemes 3 to 6, R 1 is a straight-chain or branched-chain, saturated or unsaturated hydrocarbon group having 1 to 4 carbon atoms and its isomers and NR 7 R 8any one of; R 2 、R 2' 、R 3 and R 3' each is independently selected from hydrogen (H), chlorine (Cl), methyl (Me), methoxy (MeO), ethoxy (EtO), n-propoxy, isopropoxy ( iso PrO), n-butoxy, isobutoxy ( iso BuO), sec-butoxy ( sec BuO), tert-butoxy ( tert BuO) and NR 7 R 8 any one of; R 0 is a straight-chain or branched-chain, saturated or unsaturated hydrocarbon group (e.g., having 1 to 6 carbon atoms) or an isomer thereof; and R 9 、R 10 and R 11 each is independently selected from hydrogen (H), chlorine (Cl), methyl group (Me), ethyl group (CH2CH3) and vinyl group (CH=CH2).

[0089] In the method for preparing a silicon precursor according to Reaction Schemes 4 and 6, in the first step, a triorganochlorosilane, which is a chlorosilane compound, is reacted with a primary amine in a nonpolar solvent at a low temperature of about -40 °C to carry out a substitution reaction of Cl and the amine, and then filtered and distilled under reduced pressure to form an alkylaminosilane of Formula 13.

[0090] In the second step, the alkylaminosilane formed in the first step is reacted with an alkyllithium (alkyl-Li) in a nonpolar solvent at a low temperature of about -40 °C to carry out a Li substitution reaction to form a compound of Formula 14.

[0091] Here, the alkyllithium is a lithium salt containing an alkyl group having 1 to 10 carbon atoms. Examples thereof include methyllithium, ethyllithium, propyllithium, butyllithium and isobutyllithium.

[0092] In the third step, after the reaction with an alkoxide compound represented by Formula 10 or 17, the salt (LiCl) as a reaction product and unreacted substances are removed by filtration, and the silicon precursor compound is obtained by distillation under reduced pressure.

[0093] As the nonpolar solvent used in Reaction Schemes 1 to 6, hexane, n-pentane, etc. can be used, but are not limited thereto. Nonpolar solvents commonly used by those of ordinary skill in the art can be used.

[0094] The silicon precursor compound of the present invention may be selected from the group consisting of the following compounds (1) to (56).

[0095]

[0096]

[0097]

[0098]

[0099] In addition, in the method for preparing a silicon-containing thin film according to the present invention, a silicon-containing thin film can be formed by chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), or atomic layer deposition (ALD) using a silicon precursor compound represented by Formula 1, which is well-known to those of ordinary skill in the art. The silicon-containing thin film according to the present invention can be any one selected from a silicon oxide (SiO2) film, a silicon oxycarbide (SiOC) film, a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, a silicon carbonitride (SiCN) film, a silicon oxycarbonitride (SiOCN) film, and a silicon carbide (SiC) film, but is not limited thereto. The silicon-containing thin film according to the present invention is preferably a silicon oxide film (SiO2).

[0100] The silicon oxide film according to the present invention is preferably deposited by atomic layer deposition. Atomic layer deposition includes providing a substrate to a reactor; adding a silicon precursor compound to the reactor; purging the reactor with a purge gas; adding an oxygen source to the reactor to react with the silicon precursor compound to form a silicon oxide film; and purging the reactor with a purge gas. The purge gas is selected from nitrogen, helium, argon, and mixtures thereof, but is not limited thereto. The oxygen source is selected from oxygen, peroxide, oxygen plasma, water vapor, water vapor plasma, hydrogen peroxide, an ozone source, and mixtures thereof, but is not limited thereto. The oxygen source is preferably ozone (O3).

[0101] The step of forming the silicon oxide film can be carried out at a temperature of about 200°C to about 600°C, and preferably at a temperature of about 400°C.

[0102] Mode of the Invention

[0103] Hereinafter, the present invention will be described in detail with reference to the examples.

[0104] [Example 1]

[0105] In Example 1, the compound (1) diisopropyl dimethoxysilane amine was prepared as the silicon precursor compound.

[0106] In the first step, dichlorodiisopropylsilylamine (1,1-dichloro-N,N-diisopropylsilylamine) is prepared. A 5-liter flask under anhydrous and inert atmosphere is charged with 200 g (1.48 moles) of trichlorosilane (HSiCl3) and 1,279 g (17.72 moles) of n-pentane. While maintaining the temperature at -40°C, 306 g (3.03 moles) of diisopropylamine (((CH3)2CH)2NH) is slowly added, and then stirred for 3 hours. After the stirring is completed, diisopropylamine hydrochloride (((CH3)2CH)2NH2Cl) is removed by filtration, and 264.5 g (1.48 moles) of dichlorodiisopropylsilylamine (((CH3)2CH)2NSiHCl2) is obtained by purification under reduced pressure (yield: 89%).

[0107] 1 H-NMR (C6D6): δ 0.92 (d, 12H (N(CH(CH3)2)2)), 3.09 (m, 2H (N(CH(CH3)2)2)), 5.65 (s, 1H (-SiH))

[0108] In the second step, a 5-liter flask under anhydrous and inert atmosphere is charged with 161 g (1.11 moles) of dichlorodiisopropylsilylamine (((CH3)2CH)2NSiHCl2) prepared in the first step and 1,430 g (19.82 moles) of n-pentane. While maintaining the temperature at -40°C, 274 g (2.71 moles) of triethylamine (N(CH2CH3)3) is slowly added, and 109 ml (2.71 moles) of methanol (CH3OH) is slowly added. Then, the temperature is gradually raised to room temperature, and then stirred for 3 hours. After the stirring is completed, triethylamine salt (N(CH2CH3)3HCl) is removed by filtration, and then the solvent is removed under reduced pressure and distilled to obtain 156.8 g (1.32 moles) of diisopropyldimethoxysilylamine (((CH3)2CH)2NSiH(OCH3)2) as a silicon precursor compound (yield: 62.3%).

[0109] Figure 1 The hydrogen nuclear magnetic resonance ( 1 H-NMR) spectrum of the silicon precursor compound prepared according to Example 1 of the present invention is shown. As shown, it has been confirmed that the silicon precursor compound prepared in Example 1 is diisopropyldimethoxysilylamine.

[0110] 1 H-NMR (C6D6): δ 1.11 (d, 12H (N(CH(CH3)2)2)), 3.18 (m, 2H (N(CH(CH3)2)2)), 3.40 (s, 6H (OCH3)2), 4.63 (s, 1H (-SiH))

[0111] [Example 2]

[0112] In Example 2, the compound (2) ethoxymethylsilylisopropyltrimethylsilanamine was prepared as a silicon precursor compound.

[0113] First, chloro(ethoxy)(methyl)silane, a silane compound required for preparing the silicon precursor compound, was prepared. 250 g (2.17 mol) of dichloromethylsilane (CH3SiHCl2) and 1,568 g (21.73 mol) of n-pentane were charged into a 1 L flask under an anhydrous and inert atmosphere. While maintaining the temperature at -40 °C, 230 g (2.28 mol) of triethylamine (N(CH2CH3)3) was slowly added, and ethanol (CH3CH2OH) was slowly added over one hour. Then, the temperature of the reaction solution was gradually raised to room temperature and subsequently stirred for 3 hours. After completion of stirring, triethylamine hydrochloride (N(CH2CH3)3HCl) was removed by filtration, and 185 g (1.49 mol) of chloroethoxymethylsilane (CH3CH2OSiHMeCl) was obtained by purification under reduced pressure (yield: 69%).

[0114] 1 H-NMR (C6D6): δ 0.22 (d, 3H (-SiCH3)), 1.01 (t, 3H (-OCH2CH3)), 3.59 (m, 2H (-OCH2CH3)), 5.14 (m, 1H (-SiH))

[0115] In the first step of Example 2, isopropylaminotrimethylsilanamine was prepared. 220 g (2.03 mol) of trimethylchlorosilane ((CH3)3SiCl) and 2,190 g (30 mol) of n-pentane were charged into a 1 L flask under an anhydrous and inert atmosphere. While maintaining the temperature at -40 °C, 251 g (4.25 mol) of isopropylamine ((CH3)2CHNH2) was slowly added, and then stirred for 3 hours. After completion of stirring, isopropylamine hydrochloride ((CH3)2CHNH3Cl) was removed by filtration, and then the solvent was removed under reduced pressure and distilled to obtain 205 g (1.5 mol) of isopropylaminotrimethylsilanamine ((CH3)2CHNSiH(CH3)3) (yield: 77%).

[0116] 1 H-NMR (C6D6): δ 0.06 (s, 9H (SiCH3)3), 0.96 (d, 6H (NCH(CH3)2)), 2.92 (m, 1H (NCH(CH3)2))

[0117] In the second step of Example 2, 200 g (1.38 moles) of isopropylaminotrimethylsilylamine ((CH3)2CHNSiH(CH3)3) prepared in the first step and 1,186 g (13.76 moles) of hexane were charged into a 1-liter flask under anhydrous and inert atmosphere. While maintaining the temperature at -40 °C, 402 ml (1.45 moles) of 2.5 M n-butyllithium (n-BuLi) was slowly added. Then, the temperature was gradually raised to room temperature and subsequently stirred for 12 hours.

[0118] Next, in the third step of Example 2, while maintaining the mixed solution in the second step at -20 °C, 171.5 g (1.38 moles) of chloroethoxymethylsilane (CH3CH2OSiHMeCl) was slowly added thereto, and then stirred for 6 hours or longer. After completion of stirring, lithium chloride (LiCl) salt was removed by filtration. The solvent in the filtrate was removed under reduced pressure and then distilled to obtain 181 g (1.38 moles) of ethoxymethylsilylisopropyltrimethylsilanamine (CH3CH2OSiHMeNiPrSiMe3) as a silicon precursor compound (yield: 60%).

[0119] Figure 2 The hydrogen nuclear magnetic resonance ( 1 H-NMR) spectrum of the silicon precursor compound prepared according to Example 2 of the present invention is shown. As shown, it has been confirmed that the silicon precursor compound prepared in Example 2 is ethoxymethylsilylisopropyltrimethylsilanamine.

[0120] 1 H-NMR (C6D6): δ 0.18 (s, 9H (-Si(CH3)3)), 0.28 (d, 3H (-SiHCH3)), 1.15 (t, 3H (-O(CH2CH3))), 1.17 (m, 6H (-SiNCH(CH3)2)), 3.20 (m, 1H (-NCH(CH3)2)), 3.65 (m, 2H (-O(CH2CH3))), 4.95 (m, 1H (-SiH))

[0121] [Example 3]

[0122] In Example 3, compound (3) dimethylsilylethoxyisopropylmethylsilanamine was prepared as a silicon precursor compound.

[0123] In the first step of Example 3, isopropyldimethylsilylamine was prepared. 100 g (1.06 mol) of chlorodimethylsilane ((CH3)2SiHCl) and 1,143 g (15.0 mol) of n-pentane were charged into a 1-liter flask under anhydrous and inert atmosphere. While maintaining the temperature at -40 °C, 128 g (2.17 mol) of isopropylamine ((CH3)2CHNH2) was slowly added, and then stirred for 3 hours. After completion of stirring, isopropylamine hydrochloride ((CH3)2CHNH3Cl) was removed by filtration, and then purified under reduced pressure to obtain 101 g (1.06 mol) of isopropyldimethylsilylamine ((CH3)2CHNHSiH(CH3)2) (yield: 82%).

[0124] 1 H-NMR (C6D6): δ 0.08 (s, 6H (Si(CH3)2)), 0.96 (d, 6H (NCH(CH3)2)), 2.95 (m, 1H (NCH(CH3)2)), 4.71 (m, 1H (-SiH))

[0125] In the second step of Example 3, 100 g (0.85 mol) of isopropyldimethylsilylamine ((CH3)2CHNHSiH(CH3)2) prepared in the first step and 367 g (5.0 mol) of hexane were charged into a 1-liter flask under anhydrous and inert atmosphere. While maintaining the temperature at -40 °C, 257 ml (0.90 mol) of 2.5 M n-butyllithium (n-BuLi) was slowly added. Then, the temperature was gradually raised to room temperature, and then stirred for 12 hours.

[0126] Next, in the third step of Example 3, while maintaining the mixed solution in the second step at -20 °C, 177 g (0.85 mol) of chloroethoxymethylsilane (CH3CH2OSiHMeCl) was slowly added thereto, and then stirred for 6 hours or longer. After completion of stirring, lithium chloride (LiCl) salt was removed by filtration. The solvent in the filtrate was removed under reduced pressure, and then distilled to obtain 122 g of dimethylsilylethoxyisopropylmethylsilylamine (CH3CH2OSiHMeNiPrSiHMe2) as a silicon precursor compound (yield: 70%).

[0127] Figure 3 The hydrogen nuclear magnetic resonance ( 1 H-NMR) spectrum of the silicon precursor compound prepared according to Example 3 of the present invention is shown. As shown, it has been confirmed that the silicon precursor compound prepared in Example 3 is dimethylsilylethoxyisopropylmethylsilylamine.

[0128] 1H-NMR (C6D6): δ 0.20 (m, 6H (-SiH(CH3)2)), 1.14 (t, 3H (-O(CH2CH3)), 1.17 (m, 6H (-SiNCH2(CH3)2)), 3.27 (m, 1H (NCH(CH3)2)), 3.65 (m, 2H (-O(CH2CH3))), 4.75 (m, 1H (-SiH(CH3)2)), 4.88 (m, 1H (-SiH(CH3)2))

[0129] [Example 4]

[0130] In Example 4, the compound (25) diethylaminooxymethylsilylisopropyltrimethylsilanamine was prepared as a silicon precursor compound.

[0131] In the first step of Example 4, isopropylaminotrimethylsilanamine was prepared in the same manner as in Example 2.

[0132] In the second step of Example 4, (chloro(methyl)silyl)diethylhydroxylamine was prepared. A 1 L flask under anhydrous and inert atmosphere was charged with 100 g (0.86 mol) of dichloromethylsilane (CH3SiHCl2) and 1,140 g (13.04 mol) of n-pentane. While maintaining the temperature at -40 °C, 92.4 g (0.92 mol) of triethylamine ((CH3CH2)3N) was added, and 81.4 g (0.92 mol) of diethylhydroxylamine ((CH3CH2)2NOH) was slowly added over one hour. Then, the temperature was raised to room temperature and subsequently stirred for 3 hours. After completion of stirring, triethylamine hydrochloride ((CH3CH2)3NHCl) was removed by filtration, and then the solvent was removed under reduced pressure and distilled to obtain 132 g (0.78 mol) of (chloro(methyl)silyl)diethylhydroxylamine ((CH3CH2)2NOSiHMeCl) (yield: 90%).

[0133] 1 H-NMR (C6D6): δ 0.34 (d, 3H (SiCH3)), 0.83 (m, 6H –ON(CH2CH3)2), 2.66 (m, 4H (-ON(CH2CH3)2), 5.23 (m, 1H (-SiH))

[0134] In the third step of Example 4, 14 g (0.12 mol) of isopropylaminotrimethylsilylamine ((CH3)2CHNHSi(CH3)3) prepared in the first step and 74.2 g (0.86 mol) of hexane were charged into a 1-liter flask under anhydrous and inert atmosphere. While maintaining the temperature at -40 °C, 52 ml (0.13 mol) of 2.5 M n-butyllithium (n-BuLi) was slowly added. Then, the temperature was gradually raised to room temperature and subsequently stirred for 2 hours. Next, while maintaining the mixed solution at -20 °C, 30 g (0.12 mol) of (chloro(methyl)silyl)diethylhydroxylamine ((CH3CH2)2NOHSiCH3Cl) prepared in the second step was slowly added thereto, and then stirred at room temperature for 6 hours. After completion of stirring, lithium chloride (LiCl) salt was removed by filtration. The solvent in the filtrate was removed under reduced pressure and then purified to obtain 20 g of diethylaminooxymethylsilylisopropyltrimethylsilylamine ((CH3CH2)2NOCH3HSiNCH(CH3)2Si(CH3)3) as a silicon precursor compound (yield: 62%).

[0135] 1 H-NMR (C6D6): δ 0.12 (s, 9H (-Si(CH3)3)), 0.25 (d, 3H (-SiHCH3)), 1.07 (m, 6H (-ON(CH2CH3)2)), 1.20 (m, 6H (-NCH(CH3)2)), 2.76 (m, 4H (-ON(CH2CH3)2)), 3.29 (m, 1H (-NCH(CH3)2)), 4.69 (m, 1H (-SiH))

[0136] Figure 4 The hydrogen nuclear magnetic resonance ( 1 H-NMR) spectrum of the silicon precursor compound prepared according to Example 4 of the present invention is shown. As shown, it has been confirmed that the silicon precursor compound prepared in Example 4 is diethylaminooxymethylsilylisopropyltrimethylsilylamine.

[0137] [Example 5]

[0138] In Example 5, the compound (35) isopropylmethoxytetramethyltrimethylsilyldisilazane was prepared as a silicon precursor compound.

[0139] In the first step of Example 5, chloromethoxytetramethyldisilane was prepared. 193 g (1.03 moles) of dichlorotetramethyldisilane (Cl(CH3)2SiSi(CH3)2Cl) and 2,754 g (38.15 moles) of n-pentane were charged into a 1-liter flask under anhydrous and inert atmosphere. While maintaining the temperature at -40 °C, 99 g (0.98 moles) of triethylamine (N(CH2CH3)3) was slowly added, and 31 g (0.98 moles) of methanol (HOCH3) was slowly added. Then, the temperature was gradually raised to room temperature, followed by stirring for 16 hours. After the stirring was completed, the triethylamine salt (N(CH2CH3)3HCl) was removed by filtration, and then the solvent was removed under reduced pressure and distilled to obtain 119 g (0.65 moles) of chloromethoxytetramethyldisilane (CH3O(CH3)2SiSi(CH3)2Cl) (yield: 67%).

[0140] 1 H-NMR(CDCl3): δ 0.32(s, 6H(-Si(OCH3)(CH3)2)), 0.53(s, 6H(-SiCl(CH3)2)), 3.48(s, 3H(-OCH3))

[0141] In the second step of Example 5, 129 g (0.89 moles) of isopropyltrimethylsilylamine ((CH3)2CHNHSi(CH3)3) and 535 g (6.20 moles) of n-hexane were charged into a 1-liter flask under anhydrous and inert atmosphere. While maintaining the temperature at -15 °C, 372 ml (0.93 moles) of 2.5 M n-butyllithium (n-BuLi) was slowly added. Then, the temperature was gradually raised to room temperature, followed by stirring for 2 hours.

[0142] Next, in the third step of Example 5, while maintaining the mixed solution in the second step at -3 °C, 162 g (0.89 moles) of chloromethoxytetramethyldisilane (CH3O(CH3)2SiSi(CH3)2Cl) prepared in the first step was slowly added thereto, and then the temperature was raised to room temperature and stirred for 16 hours. After the stirring was completed, the lithium chloride (LiCl) salt was removed by filtration. The solvent in the filtrate was removed under reduced pressure, and then distilled to obtain 138 g (0.48 moles) of isopropylmethoxytetramethyltrimethylsilyldisilaneamine (CH3O(CH3)2SiSi(CH3)2N(CH(CH3)2)Si(CH3)3) as a silicon precursor compound (yield: 54%).

[0143] Figure 5 The hydrogen nuclear magnetic resonance of the silicon precursor compound prepared according to Example 5 of the present invention is shown 11H-NMR spectrum. As shown in the figure, it has been confirmed that the silicon precursor compound prepared in Example 5 is isopropylmethoxytetramethyltrimethylsilyldisilazane.

[0144] 1 1H-NMR (C6D6): δ 0.21 (s, 9H (-Si(CH3)3)), 0.26 (s, 6H (-Si(CH3)2N-)), 0.34 (s, 6H (CH3OSi(CH3)2Si-)), 1.18 (d, 6H (-NCH(CH3)2)), 3.29 (s, 3H (CH3O-)), 3.37 (m, 1H (-NCH(CH3)2))

[0145] [Example 6]

[0146] In Example 6, the compound (36) dimethylsilylisopropylmethoxytetramethyldisilazane was prepared as the silicon precursor compound.

[0147] In the first step of Example 6, chloromethoxytetramethyldisilane was prepared in the same manner as in Example 5.

[0148] In the second step of Example 6, 92 g (0.78 mol) of isopropyldimethylsilylamine ((CH3)2CHNHSiH(CH3)2) prepared in the first step of Example 3 and 472 g (5.48 mol) of n-hexane were charged into a 1 L flask under anhydrous and inert atmosphere. While maintaining the temperature at -15°C, 328 ml (0.82 mol) of 2.5 M n-butyllithium (n-BuLi) was slowly added. Then, the temperature was gradually raised to room temperature and stirred for 2 hours.

[0149] Next, in the third step of Example 6, while maintaining the mixed solution in the second step at -3°C, 162 g (0.89 mol) of chloromethoxytetramethyldisilane (CH3O(CH3)2SiSi(CH3)2Cl) was slowly added thereto, and then the temperature was raised to room temperature and stirred for 16 hours. After completion of stirring, lithium chloride (LiCl) salt was removed by filtration. The solvent in the filtrate was removed under reduced pressure and then distilled to obtain 108 g (0.41 mol) of dimethylsilylisopropylmethoxytetramethyldisilazane (CH3O(CH3)2SiSi(CH3)2N(CH(CH3)2)SiH(CH3)2) as the silicon precursor compound (yield: 52%).

[0150] Figure 6 The hydrogen nuclear magnetic resonance ([ 1 1H-NMR) spectrum of the silicon precursor compound prepared according to Example 6 of the present invention is shown. As shown in the figure, it has been confirmed that the silicon precursor compound prepared in Example 6 is dimethylsilylisopropylmethoxytetramethyldisilazane.

[0151] 1 H-NMR (C6D6): δ 0.22 (d, 6H (-SiH(CH3)2)), 0.27 (s, 6H (-Si(CH3)2N-)), 0.32 (s, 6H (CH3OSi(CH3)2Si-)), 1.16 (d, 6H (-NCH(CH3)2)), 3.28 (m, 1H (-NCH(CH3)2)), 3.30 (s, 3H (CH3O-)), 4.76 (m, 1H (-SiH(CH3)2))

[0152] Thermogravimetric analysis (TGA) was performed to analyze the thermal properties of the silicon precursor compounds prepared in Examples 1 to 6. The results are shown in Figure 7 .

[0153] As Figure 7 shown, the silicon precursor compounds of Examples 4, 5, and 6 showed volatility in various temperature ranges of 220 °C or lower, between 220 °C and 500 °C, and 500 °C or higher. In particular, the silicon precursor compounds of Examples 1, 2, and 3 showed volatility in temperature ranges of 170 °C or lower, between 170 °C and 500 °C, and 500 °C or higher, which were lower than those of the silicon precursor compounds of Examples 4, 5, and 6. Therefore, it is an excellent silicon precursor capable of forming a silicon-containing film in a wide temperature range.

[0154] The above results indicate that all the silicon precursor compounds prepared according to the embodiments of the present invention showed sufficient volatility for application in atomic layer deposition (ALD) or chemical vapor deposition (CVD).

[0155] To confirm that the silicon precursor compounds prepared according to Examples 2, 3, 5, and 6 had a vapor pressure suitable for preparing a silicon oxide film by a deposition method, their vapor pressures were measured. The results are shown in Figure 8 .

[0156] As Figure 8 shown, all the silicon precursor compounds of Examples 2, 3, 5, and 6 showed a high vapor pressure of 10 Torr or higher at about 100 °C. Among them, Example 3 showed a higher vapor pressure at a lower temperature compared to other examples.

[0157] The above vapor pressure results indicate that all the silicon precursor compounds prepared according to the embodiments of the present invention showed a high vapor pressure of 10 Torr or higher at a low temperature of about 100 °C or lower, indicating sufficient vapor pressure for application in atomic layer deposition (ALD) or chemical vapor deposition (CVD).

[0158] Preparation of silicon-containing thin film

[0159] Here, a silicon oxide film SiO2 is prepared and described as a representative example, but it is not limited thereto. A silicon-containing film known in the art, such as SiN, SiO2, and SiCN, can be formed.

[0160] An experiment of forming a silicon oxide film on a silicon substrate was conducted by using the silicon compound ethoxymethylsilylisopropyltrimethylsilylamine of Example 2 as a precursor and using atomic layer deposition (ALD). An ALD reactor was used, in which a dual showerhead was used to supply the precursor and the reaction gas (O3) separately in the vertical direction.

[0161] Table 1 and Figure 9 shows the specific conditions for silicon oxide film deposition.

[0162] [Table 1]

[0163]

[0164] The composition of the silicon oxide film of the film deposited in the above manner was analyzed by X-ray photoelectron spectroscopy through AES (Auger electron spectroscopy). The results are shown in Figure 10 .

[0165] As Figure 10 shown, the film deposited by using the silicon precursor compound prepared according to the present invention is a high-purity silicon oxide film.

[0166] In addition, as Figures 11 to 13 shown, the step coverage and thickness of the silicon oxide film were observed by using a transmission electron microscope (TEM).

[0167] The following Table 2 shows the results of analyzing the characteristics of a specific silicon oxide film.

[0168] [Table 2]

[0169]

[0170] As shown in Table 2, at a substrate temperature of 400 °C and a deposition rate of / cycle, a thick film with a thickness of was formed at a high deposition rate. The O / Si composition ratio of the formed film indicates that a high-purity silicon-containing film was formed.

[0171] As described above, the silicon precursor compound prepared according to the present invention is suitable for forming a high-purity silicon-containing film at a high deposition rate by atomic layer deposition (ALD).

[0172] The above embodiments are only for the purpose of describing the preferred embodiments of the present invention. The scope of the present invention is not limited to the described embodiments. Those skilled in the art can make various changes, modifications or substitutions within the technical idea and scope of the claims of the present invention. It should be understood that these embodiments fall within the scope of the present invention.

Claims

1. A silicon precursor compound represented by the following formula 1: [Formula 1] where n is 1 or 2; R 1 is selected from straight-chain or branched, saturated or unsaturated hydrocarbon groups having 1 to 4 carbon atoms, their isomers, and NR 7 R 8 any one of; R 2 and R 3 each is independently selected from hydrogen (H), chlorine (Cl), methyl (Me), methoxy (MeO), ethoxy (EtO), n-propoxy, isopropoxy ( iso PrO), n-butoxy, isobutoxy ( iso BuO), sec-butoxy ( sec BuO), tert-butoxy ( tert BuO), and NR 7 R 8 ; R 4 is a straight-chain or branched-chain, saturated or unsaturated hydrocarbon group or an isomer thereof; R 5 is any one selected from methyl (Me), ethyl (Et), isopropyl ( iso Pr), SiMe3, SiHMe2, SiH2Me, SiH3, SiHClMe, SiHCl2, SiMe2CH2CH3, SiMe2CH═CH2, and SiHMeCH═CH2; and In NR 7 R 8 and R 7 in 8 are each independently selected from methyl (Me), ethyl (Et), and isopropyl iso (Pr).

2. The silicon precursor compound according to claim 1, which is selected from the group consisting of the following compounds (1) to (56):

3. A method for preparing a silicon precursor compound, which comprises reacting an alkoxide compound with a secondary amine or reacting an alkoxide compound with an alkylaminosilane to prepare a silicon precursor compound represented by the following formula 1: [Formula 1] where n is 1 or 2; R 1 is selected from a straight-chain or branched, saturated or unsaturated hydrocarbon group having 1 to 4 carbon atoms, its isomers, and NR 7 R 8 any one of; R 2 and R 3 each independently is selected from any one of hydrogen (H), chlorine (Cl), methyl (Me), methoxy (MeO), ethoxy (EtO), n-propoxy, isopropoxy ( iso PrO), n-butoxy, isobutoxy ( iso BuO), sec-butoxy ( sec BuO), tert-butoxy ( tert BuO), and NR 7 R 8 ; R 4 is a straight-chain or branched-chain, saturated or unsaturated hydrocarbon group or its isomer; R 5 is any one selected from methyl (Me), ethyl (Et), isopropyl ( iso Pr), SiMe3, SiHMe2, SiH2Me, SiH3, SiHClMe, SiHCl2, SiMe2CH2CH3, SiMe2CH═CH2 and SiHMeCH═CH2; and In NR 7 R 8 R in 7 and R 8 each is independently selected from methyl (Me), ethyl (Et), and isopropyl ( iso Pr).

4. The method for preparing a silicon precursor compound according to claim 3, wherein the alkoxide compound is a compound represented by the following formula 4: [Formula 4] where n is 1 or 2; R 1 is selected from a straight-chain or branched, saturated or unsaturated hydrocarbon group having 1 to 4 carbon atoms, its isomers, and NR 7 R 8 any one of; R 2 and R 3 each independently is selected from any one of hydrogen (H), chlorine (Cl), methyl (Me), methoxy (MeO), ethoxy (EtO), n-propoxy, isopropoxy ( iso PrO), n-butoxy, isobutoxy ( iso BuO), sec-butoxy ( sec BuO), tert-butoxy ( tert BuO), and NR 7 R 8 ; and in NR 7 R 8 R in 7 and R 8 each is independently selected from methyl (Me), ethyl (Et), and isopropyl iso (Pr).

5. The method for preparing a silicon precursor compound according to claim 3, wherein the alkoxide compound is reacted with the secondary amine to prepare a silicon precursor compound represented by the following formula 8: [Formula 8] wherein R 1 is selected from a straight-chain or branched, saturated or unsaturated hydrocarbon group having 1 to 4 carbon atoms, its isomers, and NR 7 R 8 any one of; R 3 is any one selected from hydrogen (H), chlorine (Cl), methyl (Me), methoxy (MeO), ethoxy (EtO), n-propoxy, isopropoxy ( iso PrO), n-butoxy, isobutoxy ( iso BuO), sec-butoxy ( sec BuO), tert-butoxy ( tert BuO), and NR 7 R 8 ; R 4 is a straight-chain or branched-chain, saturated or unsaturated hydrocarbon group or an isomer thereof; R 5 is any one selected from methyl (Me), ethyl (Et), isopropyl ( iso Pr), SiMe3, SiHMe2, SiH2Me, SiH3, SiHClMe, SiHCl2, SiMe2CH2CH3, SiMe2CH=CH2, and SiHMeCH=CH2; and In NR 7 R 8 in R 7 and R 8 each is selected from any of methyl (Me), ethyl (Et), and isopropyl ( iso Pr).

6. The method for preparing a silicon precursor compound according to claim 3, wherein the alkoxide compound is reacted with the alkylaminosilane to prepare a silicon precursor compound represented by the following formula 15 or formula 18: [Formula 15] [Formula 18] wherein R 1 is selected from a straight-chain or branched, saturated or unsaturated hydrocarbon group having 1 to 4 carbon atoms, its isomers, and NR 7 R 8 any one of; R 2 、R 2' 、R 3 and R 3' are each independently selected from any one of hydrogen (H), chlorine (Cl), methyl (Me), methoxy (MeO), ethoxy (EtO), n-propoxy, isopropoxy ( iso PrO), n-butoxy, isobutoxy ( iso BuO), sec-butoxy ( sec BuO), tert-butoxy ( tert BuO) and NR 7 R 8 ; R 0 is a straight-chain or branched-chain, saturated or unsaturated hydrocarbon group or its isomer; R 9 、R 10 and R 11 each is any one selected from hydrogen (H), chlorine (Cl), methyl group (Me), ethyl group (CH2CH3), and vinyl group (CH=CH2); and In NR 7 R 8 in R 7 and R 8 each is independently selected from methyl (Me), ethyl (Et), and isopropyl ( iso Pr).

7. The method for preparing a silicon precursor compound according to claim 3, wherein the silicon precursor compound is selected from the group consisting of the following compounds (1) to (56):

8. A method for preparing a silicon-containing thin film, wherein the silicon-containing thin film is formed using a silicon precursor compound represented by the following formula 1: [Formula 1] where n is 1 or 2; R 1 is selected from a straight-chain or branched, saturated or unsaturated hydrocarbon group having 1 to 4 carbon atoms, its isomers, and NR 7 R 8 any one of; R 2 and R 3 each independently is selected from any one of hydrogen (H), chlorine (Cl), methyl (Me), methoxy (MeO), ethoxy (EtO), n-propoxy, isopropoxy ( iso PrO), n-butoxy, isobutoxy ( iso BuO), sec-butoxy ( sec BuO), tert-butoxy ( tert BuO), and NR 7 R 8 ; R 4 is a straight-chain or branched-chain, saturated or unsaturated hydrocarbon group or its isomer; R 5 is selected from any one of methyl (Me), ethyl (Et), isopropyl ( iso Pr), SiMe3, SiHMe2, SiH2Me, SiH3, SiHClMe, SiHCl2, SiMe2CH2CH3, SiMe2CH═CH2 and SiHMeCH═CH2; and In NR 7 R 8 and R 7 in 8 are each independently selected from any one of methyl (Me), ethyl (Et), and isopropyl ( iso Pr).

9. The method for preparing a silicon-containing thin film according to claim 8, wherein the silicon precursor compound is selected from the group consisting of the following compounds (1) to (56):

10. The method for preparing a silicon-containing thin film according to claim 8, wherein the silicon-containing thin film is deposited by chemical vapor deposition, plasma-enhanced chemical vapor deposition or atomic layer deposition.

11. The method for preparing a silicon-containing thin film according to claim 8, wherein the silicon-containing thin film is any one selected from the group consisting of a silicon oxide (SiO2) film, a silicon oxycarbide (SiOC) film, a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, a silicon carbonitride (SiCN) film, a silicon oxycarbonitride (SiOCN) film and a silicon carbide (SiC) film.

12. The method for preparing a silicon-containing thin film according to claim 10, wherein the silicon-containing thin film is a silicon oxide (SiO2) film, the silicon oxide film is deposited by atomic layer deposition, and the atomic layer deposition includes: providing a substrate to a reactor; adding the silicon precursor compound to the reactor; purging the reactor with a purge gas; adding an oxygen source to the reactor to react with the silicon precursor compound to form a silicon oxide film; and purging the reactor with a purge gas.

13. The method for preparing a silicon-containing thin film according to claim 12, wherein the purge gas is selected from the group consisting of nitrogen, helium, argon and mixtures thereof, and the oxygen source is selected from the group consisting of oxygen, peroxide, oxygen plasma, water vapor, water vapor plasma, hydrogen peroxide, ozone source and mixtures thereof.

14. The method for preparing a silicon-containing thin film according to claim 12, wherein the oxygen source is ozone (O3).

15. The method for preparing a silicon-containing thin film according to claim 12, wherein the step of forming the silicon oxide film is carried out at a temperature of about 200 °C to about 600 °C.

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