Plasma surface etching process detection device

Abstract

The invention relates to a plasma surface etching process detection device, which comprises a detection carrying platform used for detecting the plasma surface etching process state of an object to be detected; the detection hole is formed in any position of the detection carrying table, and the detection hole has a depth on the detection carrying table; the detector is arranged on at least one side edge in the detection hole; wherein when the detection carrying platform detects the surface etching process state of the object to be detected and the detection hole is aligned with the detected position of the object to be detected, the detector arranged in the detection hole is used for detecting the surface etching process state of the object to be detected.

Description

Technical Field

[0001] This case is about a plasma surface etching process detection device, especially capable of detecting the progress status of the wafer plasma surface etching process by a detector. Background Art

[0002] It is well-known that detecting the etching consistency status in the wafer plasma surface etching process is a very important task. In the semiconductor process or the wafer chip industry, due to the issue of plasma etching consistency, a large amount of manpower and material resources must be invested in detection.

[0003] Such as Figure 1 is a state diagram of etching non-uniformity in the conventional wafer plasma surface etching process. As shown in Figure 1 (a), it can be known that materials A and B have different spectral intensities and wavelength ranges, and Figure 1 (b) materials A and B have different etching depths in the wafer plasma surface etching process.

[0004] Such as the conventional Taiwan, China patent "TWI388243", a plasma reactor with the least DC coils for the tip, solenoid and mirror field for plasma uniformity and reducing component damage, a plasma reactor for processing a working component, which includes a vacuum chamber and a working component support pedestal. The vacuum chamber is defined by a side wall and a top cover. The working component support pedestal has a working component support surface located inside the chamber, facing the top cover and including a cathode electrode. An RF generator is coupled to the cathode electrode. By an external annular internal electromagnet located in the first plane covering the working component support surface, an external annular external electromagnet located in the second plane covering the working component support surface and having a diameter larger than that of the internal electromagnet, and an external annular bottom electromagnet located in the third plane covering the working component support surface, the distribution of the plasma can be controlled. A DC current supply is connected to each of the internal, external and bottom electromagnets.

[0005] In a conventional Taiwan, China patent "TW20223971", an apparatus and method according to the present invention provides a plasma etching apparatus for etching a semiconductor substrate. The plasma etching apparatus includes: a plasma chamber; a plasma generating device for maintaining a plasma in the plasma chamber; a substrate support disposed in the plasma chamber for supporting the semiconductor substrate, the substrate support including a conductive structure; a power supply for providing an RF electrical signal having an RF power to the conductive structure; and an annular dielectric ring structure including a back surface, the back surface including a conductive coating; wherein the conductive structure is spaced apart from the conductive coating and extends below the conductive coating, such that when RF power is provided to the conductive structure, the RF power is coupled to the conductive coating, as Figure 2A conventional RF drive to wafer edge distance diagram is shown in FIG.

[0006] In a known Taiwan Province of China patent "TW202127147", the present invention describes enhancing the target features of a pattern imaged onto a substrate. This may include adding one or more auxiliary features to one or more positions in a patterned device pattern adjacent to one or more target features in the patterned device pattern. Adding the one or more auxiliary features based on two or more different focusing positions in the substrate. This also includes shifting the patterned device pattern and / or a design layout based on the two or more different focusing positions and one or more newly added auxiliary features. This can be used to improve asymmetry across gaps. Adding the one or more auxiliary features to the pattern and shifting the pattern and / or the design layout enhances the target features by reducing a shift caused by asymmetry across a gap of a gap in a multi-focus lithography imaging device. This can reduce the shift across an entire imaging field.

[0007] The above-mentioned conventional technology and the previous patent are both unable to detect the surface etching process status of the wafer. In view of the above-mentioned shortcomings, the inventor feels that they are not perfect, so he has exhausted his mind to carefully study and overcome them. With his accumulated experience in this industry for many years, he has further developed a plasma surface etching process detection device, which uses a simple detector, which is placed on at least one side of the detection hole; wherein when the detection carrier detects the plasma surface etching process status, when the detection hole is aligned with the detection position, the surface etching process status of the plasma is detected by using the detector placed in the detection hole. Summary of the invention

[0008] In view of this, the present invention proposes a plasma surface etching process detection device, which includes: a detection stage, which is used to detect the plasma surface etching process state of the object to be detected; a detection hole, which is placed at any position of the detection stage and has a depth in the detection stage; and a detector, which is placed at least one side of the detection hole; wherein when the detection stage detects the surface etching process state of the object to be detected, when the detection hole is aligned with the position of the object to be detected, the detector placed in the detection hole is used to detect the surface etching process state of the object to be detected.

[0009] As in the above-mentioned plasma surface etching process detection device, the surface etching process state of the object to be detected is the plasma surface etching process state of the wafer.

[0010] As mentioned above, the plasma surface etching process detection device, wherein the detector is a micro-spectrometer.

[0011] As in the above-mentioned plasma surface etching process detection device, the depth of the detection hole is 0.1mm-100mm.

[0012] For the plasma surface etching process detection device as described above, the wavelength detection range of the micro spectrometer is 200nm - 1200nm.

[0013] For the plasma surface etching process detection device as described above, the spectral resolution detection range of the micro spectrometer is 0.1nm - 10nm.

[0014] For the plasma surface etching process detection device as described above, the etching depth detection range of the micro spectrometer is 0.1nm - 10μm.

[0015] For the plasma surface etching process detection device as described above, the micro spectrometer can detect the state of the etching surface uniformity in the wafer plasma surface etching process.

[0016] For the plasma surface etching process detection device as described above, the detection range of the etching surface uniformity of the micro spectrometer is 0.1nm - 10μm.

[0017] For the plasma surface etching process detection device as described above, the micro spectrometer can be placed on the side around the detection hole.

[0018] For the plasma surface etching process detection device as described above, the detection stage can be further applied in the semiconductor industry, chip industry, plasma etching industry or biochip industry.

[0019] For the plasma surface etching process detection device as described above, the object to be measured is a semiconductor, chip or wafer. Description of the Drawings

[0020] Figure 1 It is a state diagram of etching non - uniformity in the conventional wafer plasma surface etching process.

[0021] Figure 2 It is a diagram of the distance from RF drive to the wafer edge in the conventional technology.

[0022] Figure 3 It is a top view of the plasma surface etching process detection device according to the first specific embodiment of the present invention.

[0023] Figure 4 It is a side view of the plasma surface etching process detection device according to the embodiment of the present invention.

[0024] Figure 5 It is a top view of the detection hole of the plasma surface etching process detection device according to the present invention.

[0025] Figure 6 It is a top view of the detector of the plasma surface etching process detection device according to the present invention. Detailed Description of the Invention

[0026] To make it easier to understand the technical content, purpose and advantages of the present invention, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0027] Figure 3 FIG. 6 is a top view of the first specific embodiment of the plasma surface etching process detection device of the present invention. The plasma surface etching process detection device 100 of the present invention includes: a detection stage 10 for detecting the plasma surface etching process state of a test object; a detection hole 11 disposed at any position of the detection stage 10. The detection hole 11 has a depth D in the detection stage 10 as Figure 4 shown in FIG. 6, wherein the depth of the detection hole 11 is 10 mm. In the above embodiment, the depth range of the detection hole is between 0.1 mm and 100 mm, and a detector 20 is disposed on at least one side within the detection hole 11. In this embodiment, the detector 20 is a micro spectrometer. When the detection stage 10 detects the surface etching process state of the test object, when the detection hole 11 is aligned with the position of the test object to be detected, the detector 20 disposed within the detection hole 11 is used to detect the reflected spectrum of the test object, and the surface etching process state such as the plasma surface etching consistency state is measured by the reflected spectrum. In the above embodiment, the test object is a wafer, and the surface etching process state of the test object is the plasma surface etching process state of the wafer. The test object can be further replaced by a semiconductor, a chip or other plasma etching measurement objects. Continuing the above embodiment, the detection stage 10 can be further applied to the semiconductor industry, the chip industry, the plasma etching industry or the biochip industry.

[0028] Continuing the above embodiment, as Figure 4 FIG. 7 is a side view of the plasma surface etching process detection device according to an embodiment of the present invention. As Figure 4As shown in the figure, the detector 20 and an optical input unit 23 are placed on at least one side inside the detection hole 11. In this embodiment, the detector 20 is a micro spectrometer. The detection hole 11 has a depth D on the detection stage 10. In this embodiment, the depth of the detection hole 11 is 10 mm. The depth range of the detection hole in the above embodiment is between 0.1 mm and 100 mm. The detector 20 is a micro spectrometer and can be placed inside the depth of the detection hole 11 to measure the reflection spectrum of the object to be measured. The spectral wavelength detection range of the micro spectrometer is 200 nm. The wavelength detection range of the micro spectrometer in the above embodiment is between 200 nm and 1200 nm. The spectral resolution detection range of the micro spectrometer is 0.1 nm. Continuing from the above embodiment, the spectral resolution detection range of the micro spectrometer is between 0.1 nm and 10 nm. In addition, the etching depth detection range of the micro spectrometer is 0.1 nm. Continuing, the etching depth detection range of the micro spectrometer is between 0.1 nm and 10 μm. The micro spectrometer in this embodiment can detect the consistency state of the reflection spectrum on the etched surface in the wafer plasma surface etching process, and further understand the state of the wafer plasma surface etching and the current etching progress. In this embodiment, the detection range of the etching surface consistency of the micro spectrometer is 0.1 nm. Continuing from the above embodiment, the detection range of the etching surface consistency of the micro spectrometer is between 0.1 nm and 10 μm.

[0029] Continuing with the embodiments of this case, for example Figure 5 is a top view of the detection hole of the plasma surface etching process detection device of the present invention. Embodiments of this case, for example Figure 5 As shown in the figure, the detector 20 can be placed on the side around the detection hole 11. The detector 20 is a micro spectrometer, as Figure 5 As shown in the figure, it can be seen that there is a detector 20 and an optical input unit 23 on each side around the detection hole 11 where the detector 20 is placed, and the change in the reflection spectrum wavelength of the state of the wafer plasma surface etching is detected. In the embodiment, the wavelength detection range of the micro spectrometer of the detector 20 is between 200 nm and 1200 nm.

[0030] Continuing with the embodiments of this case, for example Figure 6 is a top view of the detector of the plasma surface etching process detection device of the present invention. Embodiments of this case, for example Figure 6As shown in [Figure 0], the detector 20 is a micro spectrometer. The micro spectrometer has an input unit 212, an image capturing element (not shown), a grating 213, and a waveguide unit 21. The structure of the micro spectrometer is composed of a waveguide unit 21, an adjustable reflection unit 22, and an optical input unit 23. The waveguide unit 21 has a first substrate 211, an input unit 212, a grating 213, a mirror 214, and a second substrate 216. The input unit 212 is formed on the first substrate 211. Through an optical input unit 23, an input unit 212, and a slit 215, it is used to receive an optical signal (such as the reflection spectrum of the object to be measured (not shown)); the grating 213 is formed on the first substrate 211 and can generate an output beam after splitting the optical signal; the mirror 214 is formed on the first substrate 211 and is used to reflect the output beam; the second substrate 216 is disposed on the input unit 212, the grating 213, and the mirror 214, and a waveguide space 21 is formed between it and the first substrate 211. The adjustable reflection unit 22 is disposed outside the waveguide unit 21 and is used to change the exit angle of the output beam and adjust the focal length of the output beam. The present invention uses the above micro spectrometer placed in the detection hole 11 to detect the reflection spectrum of the object to be measured, and further determines the surface etching process state of the object to be measured, such as measuring the consistency state of plasma surface etching.

[0031] Although the present invention has been disclosed as above by way of embodiments, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field to which the present invention pertains, without departing from the spirit and scope of the present invention, may make some changes and modifications, which shall fall within the scope of the rights claimed in this patent. Therefore, the protection scope of this patent shall be subject to that defined by the appended patent application scope.

Claims

1. A plasma surface etching process detection device, comprising: A detection stage for detecting the plasma surface etching process state of a to-be-detected object; A detection hole disposed at any position on the detection stage, the detection hole having a depth in the detection stage; and A detector disposed on at least one side within the detection hole; Wherein when the detection stage detects the surface etching process state of the to-be-detected object, when the detection hole is aligned with the position of the to-be-detected object to be detected, the detector disposed within the detection hole is used to detect the surface etching process state of the to-be-detected object.

2. The plasma surface etching process detection device according to claim 1, wherein the surface etching process state of the to-be-detected object is the plasma surface etching process state of a wafer.

3. The plasma surface etching process detection device according to claim 1 or 2, wherein the detector is a micro spectrometer.

4. The plasma surface etching process detection device according to claim 3, wherein the depth of the detection hole is 0.1 mm - 100 mm.

5. The plasma surface etching process detection device according to claim 3, wherein the wavelength detection range of the micro spectrometer is 200 nm - 1200 nm.

6. The plasma surface etching process detection device according to claim 3, wherein the spectral resolution detection range of the micro spectrometer is 0.1 nm - 10 nm.

7. The plasma surface etching process detection device according to claim 3, wherein the etching depth detection range of the micro spectrometer is 0.1 nm - 10 μm.

8. The plasma surface etching process detection device according to claim 3, wherein the micro spectrometer can detect the state of the etching surface uniformity in the plasma surface etching process of a wafer.

9. The plasma surface etching process detection device according to claim 8, wherein the detection range of the etching surface uniformity of the micro spectrometer is 0.1 nm - 10 μm.

10. The plasma surface etching process detection device according to claim 5, wherein the micro spectrometer can be disposed on the side around the detection hole.

11. The plasma surface etching process detection device according to claim 1, wherein the detection stage can be further applied in the semiconductor industry, the chip industry, the plasma etching industry or the biochip industry.

12. The plasma surface etching process detection device according to claim 1, wherein the to-be-detected object is a semiconductor, a chip or a wafer.

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