Semiconductor device

Abstract

Insulation between terminals can be maintained, and miniaturization of the semiconductor device can be realized. The housing exposes respective exposed regions of the first terminal (10), the second terminal (20), and the first insulating member (30), and fixes the first terminal (10), the second terminal (20), and the first insulating member (30). The second insulating member (40) covers second portions (31a2, 31c2) on the front surface of the exposed region of the second terminal (20), the second portions (31a2, 31c2) being a predetermined distance or less from terminal edge portions (11a, 11c) and terminal outer end portions (11d) of the exposed region of the first terminal (10). Second portions (31a2, 31c2) of the first insulating member (30) extend outward from terminal edge portions (11a, 11c) and a terminal outer end portion (11d) of the first terminal (10).

Description

Technical Field

[0001] The present invention relates to a semiconductor device. Background Art

[0002] The terminal portion of a semiconductor device includes external terminals, insulating sheets, and other external terminals that are stacked stepwise from the bottom up. The closer the back surface of the end portion along the outer side edge of the uppermost other external terminal is to the front end, the closer it is to the front side than the back surface other than the end portion. Thus, the electric field strength at the outer side end of the lowermost external terminal is alleviated (for example, refer to Patent Document 1). In addition, two main terminals included in the semiconductor device include protruding portions that protrude from the package resin body. Such main terminals are configured to cancel each other out the magnetic flux generated when the main current flows (for example, refer to Patent Document 2). Further, a conductive connection material including a resin composition sandwiched between metal foils is disposed between the terminals, heated, and the distance between the terminals is adjusted so that the resin composition is cured at a temperature lower than the melting point of the metal foil. Thereby, good electrical connection between the terminals and high insulation reliability between adjacent terminals can be obtained (for example, refer to Patent Document 3).

[0003] On the plate-shaped positive-side and negative-side external connection terminals included in the semiconductor device, positive-side and negative-side external electrodes are joined using the entire opposing surfaces. The positive-side and negative-side external connection terminals and the positive-side and negative-side external electrodes are parallel to each other, and are electrically connected in a state where an electrical insulation portion is disposed between the two external connection terminals and between the two external electrodes. Thereby, the resistance of the joint portion between the external connection terminals and the external electrodes is reduced, and insulation can be ensured even when the distances between the external connection terminals and between the external electrodes are small (for example, refer to Patent Document 4).

[0004] The semiconductor device includes a first terminal and a second terminal that protrude from the package in the same direction and are adjacent to each other with a space therebetween. The first terminal and the second terminal include a first exposed portion and a second exposed portion that are exposed to the outside from the package, and the package-side of the first exposed portion and the second exposed portion are respectively covered with a first covering portion and a second covering portion made of an insulating material. The distance from the front end portion of the second covering portion to the package is longer than the distance from the front end portion of the first covering portion to the package. Thereby, the insulation performance between the terminals can be ensured, and an increase in the size of the device and an increase in inductance can be suppressed (for example, refer to Patent Document 5).

[0005] For a stacked portion where three electrode lead-out terminals are stacked with an insulating resin sheet interposed therebetween, the end face position of the edge of one electrode lead-out terminal adjacent to the insulating resin sheet is arranged at a position closer to the inside than the end face position of the edge of the insulating resin sheet. Further, the end face position of the edge of the other electrode lead-out terminal adjacent to the insulating resin sheet coincides with the end face position of the edge of the insulating resin sheet or is arranged outside this position. Thereby, the creepage insulation distance between terminals can be sufficiently ensured (for example, refer to Patent Document 6).

[0006] The semiconductor device includes a laminated structure in which an anode conductor, an insulating sheet, and a cathode conductor are arranged in this order. An insulating cover is arranged between the anode conductor and the insulating sheet, and the insulating cover has a flange portion for obtaining a creepage distance and a barrier portion for ensuring a space distance. Thereby, since the effect of reducing the inductance can be increased and the surge voltage can be suppressed, a fuse and a buffer circuit can be omitted (for example, refer to Patent Document 7). Further, the semiconductor device uses a mica insulating member to sandwich different-polarity conductor plates and includes the ends of the respective conductor plates. In addition, a resin insulating material is filled between the mica through-hole insulating member and the connection through-hole. Further, mica sheets are also pasted on the front and back of the laminated conductor plate. Thereby, a laminated conductor plate that is not easily damaged by insulation is obtained (for example, refer to Patent Document 8).

[0007] Prior Art Documents

[0008] Patent Documents

[0009] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2022-125790

[0010] Patent Document 2: Japanese Unexamined Patent Application Publication No. 2019-207922

[0011] Patent Document 3: Japanese Unexamined Patent Application Publication No. 2011-165879

[0012] Patent Document 4: Japanese Unexamined Patent Application Publication No. 2007-234693

[0013] Patent Document 5: Japanese Unexamined Patent Application Publication No. 2021-180252

[0014] Patent Document 6: Japanese Unexamined Patent Application Publication No. 2010-157565

[0015] Patent Document 7: Japanese Unexamined Patent Application Publication No. 2005-065414

[0016] Patent Document 8: Japanese Unexamined Patent Application Publication No. 2005-130542 Summary of the Invention

[0017] Technical Problem

[0018] An object of the present invention is to provide a semiconductor device capable of maintaining insulation between terminals and achieving miniaturization.

[0019] Technical solution

[0020] According to one aspect of the present invention, there is provided a semiconductor device including: a first terminal, which is plate-shaped; a second terminal, which is plate-shaped and opposed to the first terminal; a first insulating member having a first portion sandwiched between the first terminal and the second terminal, and a second portion extending outward a predetermined distance from an end of a bottom surface of the first terminal parallel to the second terminal; a second insulating member, a part of which is disposed between the first terminal and the second terminal and is in contact with the first portion and the second portion of the first insulating member; and a housing that fixes the first terminal, the second insulating member, the first insulating member, and the second terminal.

[0021] In addition, the second insulating member may be disposed between the first terminal and the first insulating member.

[0022] In addition, the second insulating member may wrap and fix the first insulating member and the second terminal.

[0023] In addition, the second insulating member may be a heat shrinkable tube or epoxy resin.

[0024] In addition, an end portion of the first terminal on the side of the second insulating member may be chamfered, and the chamfered end portion may be separated from the second portion and extend outward.

[0025] In addition, the width of the first terminal may be the same as the width of the second terminal, and the second portion of the first insulating member may extend more outward than the end portion of the second terminal.

[0026] In addition, the second insulating member may have a slit on a surface opposite to the second terminal.

[0027] In addition, the second insulating member may be disposed between the first insulating member and the second terminal.

[0028] In addition, the second insulating member may wrap the second terminal, and the end portion of the first insulating member and the end portion of the second insulating member may be in the same plane.

[0029] In addition, the width of the second portion may be 0.5 mm or more.

[0030] In addition, the dielectric breakdown strength of the first insulating member may be higher than the dielectric breakdown strength of the second insulating member.

[0031] In addition, the Young's modulus of the first insulating member may be higher than that of the second insulating member.

[0032] In addition, the direction of current flow through the first terminal may be opposite to that of the second terminal.

[0033] In addition, the semiconductor device may include: a third terminal that is plate-shaped and faces a surface of the second terminal opposite to the first terminal; a third insulating member having a third portion sandwiched between the second terminal and the third terminal, and a fourth portion extending outward a predetermined distance from an end of a bottom surface of the second terminal parallel to the third terminal; and a fourth insulating member, a part of which is disposed between the second terminal and the third terminal and is in contact with the third portion and the fourth portion of the third insulating member, and the housing may further fix the third terminal, the third insulating member, and the fourth insulating member.

[0034] In addition, the fourth insulating member may wrap and fix the third insulating member and the third terminal.

[0035] In addition, the fourth insulating member may be a heat shrinkable tube or epoxy resin.

[0036] In addition, the fourth insulating member may be disposed between the second terminal and the third insulating member.

[0037] In addition, the width of the third portion may be 0.5 mm or more.

[0038] In addition, the direction of current flow through the third terminal may be opposite to that of the second terminal.

[0039] In addition, the fourth insulating member may wrap the third terminal, the fourth insulating member may be disposed between the third insulating member and the third terminal, and the end of the third insulating member may be in the same plane as the end of the fourth insulating member.

[0040] It should be noted that the above description of the invention does not list all the necessary features of the present invention. In addition, sub-combinations of these feature groups can also be inventions.

[0041] Technical Effects

[0042] According to the disclosed technology, the insulation between terminals can be maintained, the reduction in reliability can be suppressed, and miniaturization can be achieved.

[0043] The above and other objects, features, and advantages of the present invention will become apparent from the following description related to the drawings showing preferred embodiments of the present invention as examples. Description of the Drawings

[0044] Figure 1 is a perspective view of the semiconductor device of the first embodiment.

[0045] Figure 2 is a side view of the semiconductor device of the first embodiment.

[0046] Figure 3 is a top view of the semiconductor device of the first embodiment.

[0047] Figure 4 is a top view of the stacked terminal portion included in the semiconductor device of the first embodiment.

[0048] Figure 5 is a first cross-sectional view in the longitudinal direction of the stacked terminal portion included in the semiconductor device of the first embodiment.

[0049] Figure 6 is a second cross-sectional view in the longitudinal direction of the stacked terminal portion included in the semiconductor device of the first embodiment.

[0050] Figure 7 is a cross-sectional view in the short-side direction of the stacked terminal portion included in the semiconductor device of the first embodiment.

[0051] Figure 8 is a diagram for explaining the electric field strength of the stacked terminal portion of the first comparative example.

[0052] Figure 9 is a cross-sectional view in the short-side direction of the stacked terminal portion of the second comparative example.

[0053] Figure 10 is a cross-sectional view in the short-side direction of the stacked terminal portion included in the semiconductor device of the first embodiment (modification 1-1).

[0054] Figure 11 is a cross-sectional view in the short-side direction of the stacked terminal portion included in the semiconductor device of the first embodiment (modification 1-2).

[0055] Figure 12 is a cross-sectional view in the short-side direction of the stacked terminal portion included in the semiconductor device of the first embodiment (modification 1-3).

[0056] Figure 13 is a top view of the stacked terminal portion included in the semiconductor device of the second embodiment.

[0057] Figure 14 is a first cross-sectional view in the longitudinal direction of the stacked terminal portion included in the semiconductor device of the second embodiment.

[0058] Figure 15It is a cross-sectional view in the short side direction of the stacked terminal portion included in the semiconductor device of the second embodiment.

[0059] Figure 16 It is a side view of the semiconductor device of the third embodiment.

[0060] Figure 17 It is a top view of the semiconductor device of the third embodiment.

[0061] Figure 18 It is a cross-sectional view in the long side direction of the stacked terminal portion included in the semiconductor device of the third embodiment.

[0062] Figure 19 It is a cross-sectional view in the short side direction of the stacked terminal portion included in the semiconductor device of the third embodiment.

[0063] Figure 20 It is a cross-sectional view in the short side direction of the stacked terminal portion included in the semiconductor device of the third embodiment (modification 3-1).

[0064] Symbol Explanation

[0065] 1, 1a... Semiconductor device; 2... Housing; 2a to 2d... Sides; 2e... Top surface; 2f... Bottom surface; 3... Output terminal; 4... Control terminal; 5, 5a to 5c, 6, 6a... Stacked terminal portion; 7... External terminal; 10... First terminal; 11... Conductive portion; 11a, 11c... Terminal edge portion; 11d... Terminal outer end portion; 11e... Exposed area; 12... Connection portion; 13... Joint portion; 20... Second terminal; 21... Conductive portion; 21a, 21c... Terminal edge portion; 21d... Terminal outer end portion; 21e... Exposed area; 22... Connection portion; 23... Joint portion; 30... First insulating member; 31a, 31c... Insulating edge portion; 31a1... First part; 31a2, 31c2, 31d2... Second part; 31b... Insulating inner end portion; 31d... Insulating outer end portion; 40... Second insulating member; 41a, 41c... Insulating edge portion; 41b... Insulating inner end portion; 41d... Insulating outer end portion; 41e... Insulating upper portion; 41f... Insulating lower portion; 41g... Exposed area; 41h... Gap; 41i... Insulating middle portion; 50... Third terminal; 51... Conductive portion; 51a, 51c... Terminal edge portion; 51d... Terminal outer end portion; 51e... Exposed area; 60... Third insulating member; 61a, 61c... Insulating edge portion; 61a1... Third part; 61a2, 61c2, 61d2... Fourth part; 61d... Insulating outer end portion; 70... Fourth insulating member; 71a, 71c... Insulating edge portion; 71d... Insulating outer end portion; 71e... Insulating upper portion; 71f... Insulating lower portion; 71g... Exposed area Detailed Embodiment

[0066] Hereinafter, embodiments will be described with reference to the accompanying drawings. It should be noted that in the following description, "front" and "upper surface" refer to the X-Y plane facing the upper side (+Z direction) in the semiconductor devices 1 and 1a in the figures. Similarly, "up" refers to the direction of the upper side (+Z direction) in the semiconductor devices 1 and 1a in the figures. "Back" and "lower surface" refer to the X-Y plane facing the lower side (-Z direction) in the semiconductor devices 1 and 1a in the figures. Similarly, "down" refers to the direction of the lower side (-Z direction) in the semiconductor devices 1 and 1a in the figures. The same directionality also means the same in other accompanying drawings as needed. "Front", "upper surface", "up", "back", "lower surface", "down", and "side surface" are just expressions for facilitating the determination of relative positional relationships, and do not limit the technical idea of the present invention. For example, "up" and "down" do not necessarily mean the vertical direction with respect to the ground. That is to say, the directions of "up" and "down" are not limited to the direction of gravity. In addition, in the following description, "main component" means including 80 vol% or more. In addition, "substantially the same" is sufficient as long as it is within the range of ±10%. In addition, "vertical" and "parallel" are sufficient as long as they are within the range of ±10°. "Up" and "down" do not necessarily mean the vertical direction with respect to the ground. That is to say, the directions of "up" and "down" are not limited to the direction of gravity. In addition, in the following description, "main component" means including 80 vol% or more.

[0067] [First Embodiment]

[0068] Use Figures 1 to 3 to describe the semiconductor device 1 of the first embodiment. Figure 1 is a perspective view of the semiconductor device of the first embodiment, Figure 2 is a side view of the semiconductor device of the first embodiment, Figure 3 is a top view of the semiconductor device of the first embodiment. It should be noted that, Figure 2 is a side view of the semiconductor device 1 Figure 1 viewed along the +Y direction. Figure 3 is a top view of the semiconductor device 1 Figure 1 viewed along the -Z direction.

[0069] The semiconductor device 1 may at least include a housing 2, output terminals 3, control terminals 4, and a stacked terminal portion 5. The housing 2 encapsulates an insulating circuit board and a semiconductor chip (both not shown). Such a housing 2 may be formed mainly of a thermosetting resin. The thermosetting resin is, for example, an epoxy resin, a phenolic resin, a maleimide resin, or a polyester resin. Fillers may be further added to the thermosetting resin. The filler may be, for example, a ceramic. The ceramic has insulation and high thermal conductivity. The housing 2 is formed of a thermosetting resin into, for example, a cubic shape, and includes side surfaces 2a to 2d, a top surface 2e, and a bottom surface 2f. The housing 2 may be substantially cubic. The corners may be R-chamfered or C-chamfered. The top surface 2e and the bottom surface 2f are rectangular in plan view. The side surfaces 2a to 2d sequentially surround the four sides of the top surface 2e and the bottom surface 2f in plan view. The side surfaces 2a and 2c are parallel to the long side direction (±Y direction) (corresponding to the long side of the housing 2), and the side surfaces 2b and 2d are parallel to the short side direction (±X direction) of the housing 2 (similarly corresponding to the short side).

[0070] It should be noted that the insulating circuit board and the semiconductor chip encapsulated by the housing 2 will be described. The insulating circuit board includes an insulating board, a conductive pattern formed on the front surface of the insulating board, and a metal plate formed on the back surface of the insulating board. The insulating board and the metal plate are rectangular in plan view. In addition, the corners of the insulating board and the metal plate may also be R-chamfered or C-chamfered. The size of the metal plate is smaller than that of the insulating board in plan view and is formed inside the insulating board.

[0071] The insulating board has insulation and is made of a material with excellent thermal conductivity. Such an insulating board is made of a ceramic. The ceramic is, for example, alumina, aluminum nitride, or silicon nitride.

[0072] A plurality of conductive patterns are formed on the front surface of the insulating board. The plurality of conductive patterns are respectively in a predetermined shape. A semiconductor chip is mounted on any one of the plurality of conductive patterns, and a circuit for realizing the desired function of the semiconductor device 1 is constituted by the semiconductor chip and the plurality of conductive patterns. The conductive pattern is made of a metal with excellent conductivity. Such a metal is, for example, copper, aluminum, or an alloy mainly composed of at least one of these. In order to improve corrosion resistance, the surface of the conductive pattern may be subjected to a plating treatment. At this time, the plating material used is, for example, nickel, a nickel-phosphorus alloy, or a nickel-boron alloy.

[0073] Such a conductive pattern is formed on the front surface of the insulating board as follows. A metal layer is formed on the front surface of the insulating board, and the metal layer is etched or the like to obtain a plurality of conductive patterns in a predetermined shape. Alternatively, a plurality of conductive patterns cut out from the metal layer in advance may be pressed against the front surface of the insulating board. The corners of the plurality of conductive patterns may be R-chamfered or C-chamfered.

[0074] A metal plate is formed on the back surface of the insulating board. The metal plate is rectangular in shape. The area of the metal plate when viewed from above is smaller than the area of the insulating board and larger than the area of the region where a plurality of conductive patterns are formed. The corners of the metal plate can be chamfered with an R chamfer or a C chamfer. The size of the metal plate is smaller than the size of the insulating board and is formed on the entire surface of the insulating board except for the edge portion. The metal is, for example, copper, aluminum, or an alloy containing at least one of them. In order to improve the corrosion resistance, the surface of the metal plate can also be subjected to a plating treatment. At this time, the plating material used is, for example, nickel, nickel-phosphorus alloy, or nickel-boron alloy.

[0075] As an insulating circuit board having such a structure, for example, a DCB (Direct Copper Bonding) board or an AMB (Active Metal Brazed) board can be used.

[0076] The semiconductor chip includes a power device element made of silicon. The power device element is, for example, an RC (Reverse-Conducting)-IGBT (Insulated Gate Bipolar Transistor). The RC-IGBT has the functions of an IGBT as a switching element and an FWD (Free Wheeling Diode) as a diode element. A control electrode (gate electrode) and an output electrode (emitting electrode) as a main electrode are provided on the front surface of such a semiconductor chip. An input electrode (collecting electrode) as a main electrode is provided on the back surface of the semiconductor chip. It should be noted that the control electrode can be provided, for example, along one side (or the central portion of one side) of the front surface of the semiconductor chip. The output electrode can be provided at the central portion of the front surface of the semiconductor chip. The input electrode can be provided to include the central portion of the back surface of the semiconductor chip.

[0077] In addition, a semiconductor chip can use a set of switching elements and diode elements to replace the RC-IGBT. The switching elements are, for example, IGBTs, power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). Such a semiconductor chip, for example, has an input electrode (drain electrode or collector electrode) as the main electrode on the back surface, and a control electrode (gate electrode) and an output electrode (source electrode or emitter electrode) as the main electrode on the front surface. The diode elements are, for example, SBDs (Schottky Barrier Diodes), PiN (P-intrinsic-N) diodes, and these elements are used as the FWD. Such a semiconductor chip has an output electrode (cathode electrode) as the main electrode on the back surface, and an input electrode (anode electrode) as the main electrode on the front surface.

[0078] In addition, the semiconductor chip can include a power MOSFET as the switching element. In this semiconductor chip, the body diode of the power MOSFET can perform the same function as the FWD of the RC-IGBT. Such a semiconductor chip has a control electrode (gate electrode) and an output electrode (source electrode) as the main electrodes on the front surface respectively. The semiconductor chip has an input electrode (drain electrode) as the main electrode on the back surface. Such a semiconductor chip can preferably be made of silicon carbide.

[0079] The semiconductor chip is bonded to a predetermined conductive pattern of the insulating circuit board through a bonding component. In addition, the control electrode and the output electrode of the semiconductor chip can be connected to the predetermined conductive pattern through wires.

[0080] It should be noted that the bonding component can be solder or a metal sintered material. Lead-free solder is used for the solder. The lead-free solder is mainly composed of an alloy including at least two of tin, silver, copper, zinc, antimony, indium, and bismuth, for example. In addition, additives can also be contained in the solder. The additives are, for example, nickel, germanium, cobalt, or silicon. By containing the additives, the solder improves the wettability, gloss, and bonding strength, and can achieve improved reliability. The metal sintered material can be composed mainly of at least one of iron, copper, aluminum, titanium, nickel, tungsten, and molybdenum, for example.

[0081] The output terminal 3 is electrically connected to a predetermined conductive pattern of the insulating circuit board within the housing 2 and extends outward from the side surface 2b of the housing 2. At this time, the output terminal 3 extends perpendicularly (-X direction) with respect to the side surface 2b. It should be noted that this predetermined conductive pattern is electrically connected to the output electrode of the semiconductor chip. At least the portion of the output terminal 3 that extends outward from the side surface 2b of the housing 2 is in a flat plate shape. A through hole can be formed in the portion of the output terminal 3 that extends outward. Such an output terminal 3 is made of a metal with excellent conductivity. Such a metal is, for example, copper, aluminum, or an alloy having at least one of these as a main component. In order to improve corrosion resistance, the surface of the output terminal 3 can also be subjected to a plating treatment. At this time, the plating material used is, for example, nickel, nickel-phosphorus alloy, or nickel-boron alloy.

[0082] The control terminal 4 is electrically connected to a predetermined conductive pattern of the insulating circuit board within the housing 2 and extends outward perpendicularly (+Z direction) from the top surface 2e of the housing 2 with respect to the top surface 2e. This predetermined conductive pattern is electrically connected to the control electrode of the semiconductor chip. Additionally, this predetermined conductive pattern can be electrically connected to the output electrode of the semiconductor chip. In this case, the control terminal 4 electrically connected to this predetermined conductive pattern conducts the sense current flowing through the semiconductor chip.

[0083] Alternatively, a plurality of control terminals 4 can be provided along the side surface 2c on the side surface 2c side of the top surface 2e. The top surface 2e side of the control terminal 4 can be protected by a protection portion. In this case, the protection portion can be made of the same material as the housing 2. Such a control terminal 4 is made of a metal with excellent conductivity. Such a metal is, for example, copper, aluminum, or an alloy having at least one of these as a main component. In order to improve corrosion resistance, the surface of the control terminal 4 can also be subjected to a plating treatment. At this time, the plating material used is, for example, nickel, nickel-phosphorus alloy, or nickel-boron alloy.

[0084] The stacked terminal portion 5 is electrically connected to a predetermined conductive pattern of the insulating circuit board within the housing 2 and extends outward from the side surface 2d of the housing 2. At this time, the stacked terminal portion 5 extends perpendicularly (+X direction) with respect to the side surface 2d of the housing 2. The stacked terminal portion 5 is connected to the positive electrode and the negative electrode respectively from the outside. This predetermined conductive pattern is electrically connected to the output electrode and the input electrode of the semiconductor chip.

[0085] Use Figures 4 to 7 The detailed situation of such a stacked terminal portion 5 will be described. Figure 4 is a top view of the stacked terminal portion included in the semiconductor device of the first embodiment. Figure 5 is a first cross-sectional view in the long side direction of the stacked terminal portion included in the semiconductor device of the first embodiment, Figure 6 is a second cross-sectional view in the long side direction of the stacked terminal portion included in the semiconductor device of the first embodiment. Figure 7It is a cross-sectional view in the short side direction of the stacked terminal portion included in the semiconductor device of the first embodiment. It should be noted that in Figures 4 to 6 the part covered by the housing 2 is shown by a dashed line. Figure 5 and Figure 6 respectively show the cross-sectional views at the single-dot chain lines Y1-Y1 and Y2-Y2 of Figure 4 . Figure 7 shows the cross-sectional view at the single-dot chain line X-X of Figure 4 .

[0086] The stacked terminal portion 5 includes a first terminal 10, a second terminal 20, a first insulating member 30, and a second insulating member 40. The first terminal 10 integrally includes a conduction portion 11, a connection portion 12, and a bonding portion 13. The thickness of the first terminal 10 is substantially uniform as a whole. The first terminal 10 extends outward from the side surface 2d of the housing 2. In addition, a part of the first terminal 10 extends inward from the side surface 2d of the housing 2. A part of the first terminal 10 from the side surface 2d of the housing 2 inward is fixed to the housing 2. At this time, an exposed area of the first terminal 10 described later is exposed.

[0087] The conduction portion 11 is rectangular in plan view and is in a flat plate shape. The conduction portion 11 includes terminal edge portions 11a, 11c provided on the side portions of the front and back surfaces of the rectangular shape in plan view, and terminal outer end portions 11d provided on the front end portions of the front and back surfaces.

[0088] This side portion is a side portion parallel to the extending direction (+X direction) of the stacked terminal portion 5. That is, the terminal edge portions 11a, 11c are substantially parallel to the side surfaces 2a, 2c of the housing 2. In addition, this front end portion is the outermost end portion in the extending direction (+X direction) of the stacked terminal portion 5. That is, the terminal outer end portions 11d are substantially parallel to the side surfaces 2b, 2d of the housing 2. The portion of the front surface of the conduction portion 11 extending and exposed from the side surface 2d of the housing 2 is the exposed area 11e (refer to Figure 4 ). The exposed area 11e can be connected to a terminal (N terminal) of a negative electrode, for example, from the outside.

[0089] The connection portion 12 is formed on the side of the terminal edge portion 11c at the end portion of the conduction portion 11 on the side opposite to the terminal outer end portion 11d (-X direction). The width of the connection portion 12 in the ±Y direction can be 30% or more and 50% or less of the width of the conduction portion 11 in the same direction.

[0090] The joint portion 13 is rectangular in plan view and is in the shape of a flat plate. When viewed in the +Y direction, the joint portion 13 is located on the side closer to the bottom surface 2f of the housing 2 than the conduction portion 11. The joint portion 13 is integrally connected to the conduction portion 11 having different heights via the connecting portion 12. The joint portion 13 is joined to a predetermined conductive pattern of an insulating circuit board (not shown). It should be noted that the joining at this time can be the above-described joining member or ultrasonic joining.

[0091] The second terminal 20 integrally includes a conduction portion 21, a connecting portion 22, and a joint portion 23. The thickness of the second terminal 20 is substantially uniform as a whole. The conduction portion 21 is rectangular in plan view and is in the shape of a flat plate, and faces the conduction portion 11 of the first terminal 10. The conduction portion 21 includes terminal edge portions 21a, 21c provided on the side portions of the front and back surfaces of the rectangular shape in plan view, and terminal outer end portions 21d provided at the front end portions of the front and back surfaces.

[0092] This side portion is a side portion parallel to the extending direction (+X direction) of the stacked terminal portion 5. That is, the terminal edge portions 21a, 21c are substantially parallel to the side surfaces 2a, 2c of the housing 2 and the terminal edge portions 11a, 11c of the first terminal 10. In addition, in the first embodiment, the width of the conduction portion 21 in the ±Y direction is greater than the width of the conduction portion 11 of the first terminal 10 in the same direction. That is, the terminal edge portions 21a, 21c of the conduction portion 21 are located on the outer side in the ±Y direction relative to the terminal edge portions 11a, 11c of the conduction portion 11 of the first terminal 10.

[0093] In addition, this front end portion is the outermost end portion in the extending direction (+X direction) of the stacked terminal portion 5. That is, the terminal outer end portions 21d are substantially parallel to the side surfaces 2b, 2d of the housing 2 and the terminal outer end portions 11d of the first terminal 10. Further, the terminal outer end portions 21d are located on the outer side (+X direction) relative to the terminal outer end portions 11d of the first terminal 10. That is, the length of the conduction portion 21 in the ±X direction (the extending direction of the stacked terminal portion 5) is longer than the length of the conduction portion 11 of the first terminal 10 in the same direction. It should be noted that the end portion of the conduction portion 21 on the side opposite to the terminal outer end portion 21d and the end portion of the terminal outer end portion 11d of the first terminal 10 in the same direction may be in the same position in plan view. The portion of the front surface of such a conduction portion 21 that extends and is exposed from the housing 2 and the second insulating member 40 is an exposed area 21e (see Figure 4 ). The exposed area 21e can be connected to a terminal (P terminal) for connecting a positive electrode, for example, from the outside.

[0094] The connecting portion 22 is formed on the side of the terminal edge portion 21a of the end portion of the conducting portion 21 on the side opposite to the outer end portion 21d of the terminal (-X direction). The width of the connecting portion 22 in the ±Y direction may be 30% or more and 50% or less of the width of the conducting portion 21 in the same direction. However, the connecting portions 12 of the connecting portion 22 and the first terminal 10 may have widths such that they do not overlap in a top view, and are formed on the conducting portions 11 and 21 without overlapping.

[0095] The joint portion 23 is rectangular in a top view and is flat. When viewed in the +Y direction, the joint portion 23 is located on the side closer to the bottom surface 2f of the housing 2 than the conducting portion 21. The joint portion 23 is integrally connected to the conducting portion 21 with different heights via the connecting portion 22. The joint portion 23 is joined to a predetermined conductive pattern of an insulating circuit board (not shown). That is, the joint portion 23 may have the same height as the joint portion 13 of the first terminal 10. It should be noted that the joining at this time may also be the above-mentioned joining member or ultrasonic joining.

[0096] Such a first terminal 10 and a second terminal 20 are made of a metal with excellent conductivity. Such a metal is, for example, copper, aluminum, or an alloy mainly composed of at least one of these. In order to improve the corrosion resistance, the surfaces of the first terminal 10 and the second terminal 20 may be subjected to a plating treatment. At this time, the plating material used is, for example, nickel, nickel-phosphorus alloy, or nickel-boron alloy.

[0097] The first insulating member 30 is provided between the front surface of the conducting portion 21 of the second terminal 20 and the back surface of the conducting portion 11 of the first terminal 10. Specifically, the back surface of the conducting portion 11 of the first terminal 10 is provided above the front surface of the first insulating member 30 with the second insulating member 40 interposed therebetween. The first insulating member 30 is mainly composed of a material having insulating properties. Such a first insulating member 30 is a sheet-like (film-like) insulating paper, for example, aramid paper. Aramid paper is an insulating paper formed by weaving high-density aromatic polyamide fibers. Alternatively, it may also be an insulating paper made of mica.

[0098] The first insulating member 30 includes a first portion 31a1 and second portions 31a2, 31c2, 31d2. In addition, the first insulating member 30 is rectangular in a top view and includes an insulating edge portion 31a, an insulating inner end portion 31b, an insulating edge portion 31c, and an insulating outer end portion 31d surrounding the periphery. The insulating edge portions 31a and 31c are provided on the side portions of the first insulating member 30. The side portions are the side portions parallel to the extending direction (+X direction) of the stacked terminal portion 5. That is, the insulating edge portions 31a and 31c are substantially parallel to the side surfaces 2a and 2c of the housing 2, the terminal edge portions 11a and 11c of the first terminal 10, and the terminal edge portions 21a and 21c of the second terminal 20.

[0099] The first part 31a1 of the first insulating member 30 is the part clamped by the first terminal 10 and the second terminal 20. In the case of the first embodiment, the first part 31a1 corresponds to the conducting part 11 of the first terminal 10. Further, in the first embodiment, the width of the first insulating member 30 in the ±Y direction is substantially equal to the width of the conducting part 21 of the second terminal 20 in the same direction. That is, the insulating edge parts 31a, 31c of the first insulating member 30 are located at substantially the same positions as the terminal edge parts 21a, 21c of the conducting part 21 of the second terminal 20. Therefore, the width of the first insulating member 30 in the ±Y direction is longer than the width of the conducting part 11 of the first terminal 10 in the same direction. That is, the insulating edge parts 31a, 31c of the first insulating member 30 are located at positions more outward in the ±Y direction than the terminal edge parts 11a, 11c of the conducting part 11 of the first terminal 10. Thus, the parts of the insulating edge parts 31a, 31c of the first insulating member 30 that extend more outward (±Y direction) than the terminal edge parts 11a, 11c of the conducting part 11 of the first terminal 10 (for example, Figure 7 the region surrounded by the four sides of the dotted line) are the second parts 31a2, 31c2. It should be noted that the second parts 31a2, 31c2 of the first insulating member 30 extend outward (±Y direction) by a width W from the terminal edge parts 11a, 11c of the first terminal 10 (the ends of the bottom surface parallel to the second terminal 20).

[0100] The insulating inner end part 31b is the end part on the inner side in the -X direction of the first insulating member 30. That is, the insulating inner end part 31b is substantially orthogonal to the side surfaces 2b, 2d of the housing 2, the terminal outer end parts 11d of the first terminal 10, and the terminal outer end parts 21d of the second terminal 20. Further, the insulating inner end part 31b extends more in the -X direction than the ends on the opposite sides (-X direction) of the terminal outer end parts 11d of the first terminal 10 and the terminal outer end parts 21d of the second terminal 20, respectively.

[0101] The insulating outer end part 31d is the end part on the outer side in the +X direction of the first insulating member 30. That is, the insulating outer end part 31d is substantially parallel to the side surfaces 2b, 2d of the housing 2, the terminal outer end parts 11d of the first terminal 10, and the terminal outer end parts 21d of the second terminal 20. Further, the insulating outer end part 31d is located at a position more outward in the +X direction than the terminal outer end part 11d of the first terminal 10 and more inward in the -X direction than the terminal outer end part 21d of the second terminal 20. The part of the front surface of such a first insulating member 30 that is exposed from the housing 2 and the conducting part 11 of the first terminal 10 is the exposed area (reference numeral omitted). Thus, the part of the insulating outer end part 31d of the first insulating member 30 that extends more outward ( +X direction) than the terminal outer end part 11d of the conducting part 11 of the first terminal 10 (for example, Figure 5 , 6The region surrounded by the four sides of the dashed line) is also the second part 31d2. It should be noted that the front surface of the second part 31d2 of the first insulating member 30 is an exposed region (the reference numeral is omitted). The length of the second part 31d2 of the first insulating member 30 in the ±X direction only needs to be a length that maintains the insulation between the terminal outer end portion 11d of the first terminal 10 and the second terminal 20. This length is, for example, about 10 mm. Therefore, the second parts 31a2, 31c2, and 31d2 are respectively disposed on the -Y direction side, +Y direction side, and +X direction side of the first part 31a1 in a top view.

[0102] A part of the second insulating member 40 (the insulating upper part 41e) is disposed between the first terminal 10 and the second terminal 20. In addition, the insulating upper part 41e of the second insulating member 40 is in contact with the entire surfaces of the first part 31a1 of the first insulating member 30 and the second parts 31a2, 31c2, and 31d2.

[0103] Among them, in the first embodiment, the second insulating member 40 includes the insulating upper part 41e that is in contact with the upper surfaces of the first part 31a1 and the second parts 31a2, 31c2, and 31d2, and integrally includes the first insulating member 30 and the second terminal 20. As Figure 7 shown, such a second insulating member 40 integrally includes, when viewed along the -X direction: the insulating upper part 41e including the first insulating member 30 and the second terminal 20, and the insulating edge parts 41a, 41c, and the insulating lower part 41f.

[0104] The insulating upper part 41e of the second insulating member 40 covers the entire front surface of the first insulating member 30 in the ±Y direction. In addition, the insulating edge parts 41a and 41c of the second insulating member 40 cover the entire insulating edge parts 31a and 31c of the first insulating member 30 and the terminal edge parts 21a and 21c of the conduction part 21 of the second terminal 20 in the ±Z direction. Further, the insulating lower part 41f of the second insulating member 40 covers the entire back surface of the conduction part 21 of the second terminal 20 in the ±Y direction.

[0105] The length of the second insulating member 40 in the ±X direction is generally uniform as a whole. The insulating inner end part 41b in the -X direction of the second insulating member 40 is located at a position substantially the same as the end part of the first terminal 10 (conduction part 11) on the side opposite to the terminal outer end part 11d. The insulating inner end part 41b in the -X direction of the second insulating member 40 is located at a position substantially the same as the end part of the second terminal 20 (conduction part 21) on the side opposite to the terminal outer end part 21d. In addition, the insulating outer end part 41d of the second insulating member 40 is located at a position substantially the same as the insulating outer end part 31d of the first insulating member 40.

[0106] Such a second insulating member 40 is also mainly composed of an insulating material. Among them, the insulating property of the second insulating member 40 may be lower than that of the first insulating member 30. On the other hand, the flexibility of the second insulating member 40 needs to be higher than that of the first insulating member 30. That is, the dielectric breakdown strength of the second insulating member 40 is lower than that of the first insulating member 30. The Young's modulus of the second insulating member 40 is lower than that of the first insulating member 30. Such a second insulating member 40 can be, for example, a heat-shrinkable tube or an insulating tape. Such materials can be, for example, polyolefin or fluororesin (PTFE).

[0107] In the stacked terminal portion 5 formed in such a structure, a terminal of the negative electrode is connected to the exposed area 11e of the first terminal 10, and a terminal of the positive electrode is connected to the exposed area 21e of the second terminal 20. The current conduction direction of the first terminal 10 and the current conduction direction of the second terminal 20 are in opposite directions. A first insulating member 30 and a second insulating member 40 (insulating upper portion 41e) are provided between the first terminal 10 and the second terminal 20. Therefore, the stacked terminal portion 5 maintains the insulation between the first terminal 10 and the second terminal 20 and reduces the inductance.

[0108] It should be noted that such a semiconductor device 1 is manufactured in the following manner. First, prepare the components constituting the stacked terminal portion 5 (first terminal 30, second terminal 20, first insulating member 30, second insulating member 40). The first insulating member 30 is provided on the front surface of the conduction portion 21 of the second terminal 20 and the first insulating member 30 is included by the second insulating member 40. The first terminal 10 is provided on the second terminal 20 with the first insulating member 30 and the second insulating member 40 interposed therebetween. The semiconductor chip, the output terminal 3, the control terminal 4, and the stacked terminal portion 5 are respectively joined to the predetermined conductive patterns of the insulating circuit board. At this time, wiring is performed on the insulating circuit board and the semiconductor chip through bonding wires. The stacked terminal portion 5 provides the first insulating member 30 on the front surface of the conduction portion 21 of the second terminal 20 and includes the first insulating member 30 by the second insulating member 40. Therefore, the operability of the stacked terminal portion 5 is improved.

[0109] The joined insulating circuit board is arranged in a predetermined mold, and a packaging member is injected into the mold and the packaging member is cured. Therefore, in the mold, the insulating circuit board and the semiconductor chip are encapsulated, and the output terminal 3, the control terminal 4, and the stacked terminal portion 5 are fixed. By removing the mold, the semiconductor device 1 is manufactured.

[0110] Next, as a first comparative example of the stacked terminal portion 5 with respect to the first embodiment, Figure 8 The case where the second insulating member 40 is removed from the stacked terminal portion 5 will be described. Figure 8This is a diagram for explaining the electric field strength of the stacked terminal portion of the first comparative example. It should be noted that Figure 8 The following figure of Figure 8 corresponds to the cross-sectional view of the portion of the stacked terminal portion 150 of the first comparative example corresponding to the Figure 4 single dotted line X-X ([ Figure 7 Figure 7 ), and shows the side of the terminal edge portion 11c of the first terminal 10. The dotted lines parallel to the ±Y direction in this figure show the measurement positions of the electric field strength in the stacked terminal portion 150. The hatched lines in this figure respectively show the generation portions of the electric field strength. Figure 8 The upper figure of Figure 8 shows the electric field strength relative to the distance (position) in the ±Y direction of the stacked terminal portion 150. That is, the horizontal axis Y represents the position (mm) in the Y direction of the stacked terminal portion 150, and the vertical axis V represents the electric field strength (V / m). The origin (0 mm) of the horizontal axis Y corresponds to the position of the terminal edge portion 11c of the first terminal 10 included in the stacked terminal portion 150.

[0111] The first terminal 10 of the stacked terminal portion 150 of the first comparative example is disposed on the second terminal 20 with the first insulating member 30 interposed therebetween. The first insulating member 30 extends outward from the terminal edge portion 11c of the first terminal 10. The insulating edge portion 31c of the first insulating member 30 and the terminal edge portion 21c of the second terminal 20 are located at substantially the same position.

[0112] For such a stacked terminal portion 150, for example, the terminal of the negative electrode is connected to the first terminal 10 and the terminal of the positive electrode is connected to the second terminal 20 to energize. Then, it can be known that an electric field strength is generated in the portion of the first insulating member 30 overlapping with the first terminal 10 and the second terminal 20. In particular, it can be known that the electric field strength increases the most in the portion of the first insulating member 30 corresponding to the terminal edge portion 11c of the first terminal 10. In addition, as the distance from the terminal edge portion 11c of the first terminal 10 to the outside (+Y direction) increases, the electric field strength generated in the first insulating member 30 decreases, and if it exceeds 0.5 mm, almost no electric field strength is generated.

[0113] From the above, it can be known that the electric field strength significantly increases near the terminal edge portion 11c of the first terminal 10 in the stacked terminal portion 150. Therefore, the stacked terminal portion 150 cannot maintain the insulation between the terminal edge portion 11c of the first terminal 10 and the second terminal 20.

[0114] In addition, the case where the widths of the first terminal 10 and the second terminal 20 in the ±Y direction in the stacked terminal portion 150 are equal is studied. In this case, in order to ensure the creepage insulation distance between the first terminal 10 and the second terminal 20, the width of the first insulating member 30 in the ±Y direction needs to be sufficiently longer than the widths of the first terminal 10 and the second terminal 20 in the same direction. Therefore, the stacked terminal portion 150 requires a certain width, and there is a limit to miniaturization.

[0115] Next, as a second comparative example of the stacked terminal portion 150 with respect to the first comparative example, the case where the second insulating member 40 is provided will be described. Figure 9 This is a cross-sectional view of the second comparative example of the stacked terminal portion in the short side direction. It should be noted that Figure 9 this is a cross-sectional view of the position in the stacked terminal portion 150a corresponding to the single dotted line X-X of Figure 9 the Figure 4 .

[0116] For the stacked terminal portion 150a of the second comparative example, in order to achieve miniaturization of the stacked terminal portion 150 of the first comparative example, the widths of the first terminal 10, the second terminal 20, and the first insulating member 30 in the ±Y direction are made equal. In addition, the first insulating member 30 and the second terminal 20 are integrally included by the second insulating member 40, thereby achieving an improvement in insulation.

[0117] In such a stacked terminal portion 150a, the negative terminal is also connected to the first terminal 10 and the positive terminal is connected to the second terminal 20 to conduct electricity. As described above, the electric field strength is the largest at the terminal edge portions 11a and 11c of the first terminal 10 in the second insulating member 40. Therefore, the stacked terminal portion 150a may damage the region Figure 9 enclosed by the dotted line in the second insulating member 40. If this region is damaged, the possibility of not maintaining the insulation between the first terminal 10 and the second terminal 20 becomes high.

[0118] Therefore, in the semiconductor device 1 described above, it includes a first terminal 10, a second terminal 20, a first insulating member 30, a second insulating member 40, and a housing 2. The first terminal 10 and the second terminal 20 are plate-shaped, and the second terminal 20 faces the first terminal 10. The first insulating member 30 has a first portion 31a1 sandwiched between the first terminal 10 and the second terminal 20, and second portions 31a2, 31c2, 31d2 that extend a predetermined distance outward from the end of the bottom surface of the first terminal 10 parallel to the second terminal 20. A part of the second insulating member 40 is disposed between the first terminal 10 and the second terminal 20 and is in contact with the first portion 31a1 and the second portions 31a2, 31c2, 31d2 of the first terminal 10. The housing 2 fixes the first terminal 10, the second insulating member 40, the first insulating member 30, and the second terminal 20. Therefore, damage to the insulating edge portions 41a, 41c of the second portions 31a2, 31c2 included in the second insulating member 40 is prevented. In addition, the insulating property of the first insulating member 30 is higher than that of the second insulating member 40, and the first insulating member 30 and the second insulating member 40 are disposed between the first terminal 10 and the second terminal 20. Therefore, the distance between the first terminal 10 and the second terminal 20 can be maintained constant, and in addition, the electric field concentration between the second terminals 20 directly below the terminal edge portions 11a, 11c and the terminal outer end portion 11d of the first terminal 10 can be alleviated, maintaining the insulating property. Therefore, the stacked terminal portion 5 can ensure the creepage distance between the first terminal 10 and the second terminal 20 through such a structure, and can reduce the width of the first insulating member 30, enabling miniaturization. In addition, the electric field concentration between the first terminal 10 and the second terminal 20 can be alleviated. Therefore, the semiconductor device 1 including the stacked terminal portion 5 can maintain reliability and achieve miniaturization.

[0119] In such a semiconductor device 1, if based on Figure 8 the result, if the first portion 31a1 of the stacked terminal portion 5 extends from the first terminal 10 by 0.5 mm or more, the insulating property can be maintained more reliably. That is, the width by which the second portions 31a2, 31c2, 31d2 of the stacked terminal portion 5 extend is preferably 0.5 mm or more.

[0120] It should be noted that on the +X direction side of the stacked terminal portion 5, in order to connect the terminals for the positive electrode and the negative electrode respectively, exposed regions 11e, 21e are required. In addition to the second portion 31d2 of the first insulating member 30 extending from the terminal outer end portion 11d of the first terminal 10 by 0.5 mm or more, it is also necessary to ensure the creepage distance (in the ±X direction) for maintaining the insulating property of the exposed region 11e of the first terminal 10 and the exposed region 21e of the second terminal 20.

[0121] In addition, in the case where the thicknesses of the insulating edge portion 41a, the insulating upper portion 41e, the insulating edge portion 41c, and the insulating lower portion 41f of the second insulating member 40 of the first embodiment are substantially equal (refer to Figure 7 ). Without being limited to this case, in the second insulating member 40, the thicknesses of the insulating edge portions 41a and 41c may be greater than the thicknesses of the insulating upper portion 41e and the insulating lower portion 41f.

[0122] In addition, the stacked terminal portion 5 of the first embodiment includes a first terminal 10 and a second terminal 20. The second terminal 20 is included in the second insulating member 40 together with the first insulating member 30 on the back side of the first terminal 10. The inclusion object of the second insulating member 40 is not limited to this case. For example, when the width of the first terminal 10 in the ±Y direction is longer than the width of the second terminal 20 in the same direction, a first insulating member 30 having the same width as the first terminal 10 in the ±Y direction is provided on the back side of the first terminal 10, and the first terminal 10 and the first insulating member 30 are included by the second insulating member 40. Moreover, the second terminal 20 may be provided on the back side of the second insulating member 40 that includes the first terminal 10 and the first insulating member 30. It should be noted that, in this case, the terminal outer end portion 11d of the first terminal 10 included in the second insulating member 40 may extend more in the +X direction than the insulating outer end portion 41d, and the terminal outer end portion 21d of the second terminal 20 may extend more in the +X direction than the terminal outer end portion 11d of the first terminal 10.

[0123] Next, various modification examples of the stacked terminal portion 5 of the first embodiment will be described below with reference to the drawings. It should be noted that, in the following, unless otherwise specified, the first terminal 10, the second terminal 20, the first insulating member 30, and the second insulating member 40 may be made of the same material as in the first embodiment.

[0124] (Modification Example 1-1)

[0125] Use Figure 10 to describe the stacked terminal portion 5a of Modification Example 1-1. Figure 10 is a cross-sectional view in the short side direction of the stacked terminal portion included in the semiconductor device of the first embodiment (Modification Example 1-1). It should be noted that Figure 10 is a cross-sectional view of the portion in the stacked terminal portion 5a corresponding to the Figure 4 single dotted line X-X.

[0126] Regarding the stacked terminal portion 5a of Modification 1-1, in the stacked terminal portion 5 of the first embodiment, the widths of the first terminal 10, the second terminal 20, and the first insulating member 30 in the ±Y direction are substantially equal. However, the back sides (the ends (corners) on the second terminal 20 side of the conduction portion 11) of the terminal edge portions 11a and 11c of the first terminal 10 (conduction portion 11) of the stacked terminal portion 5a are chamfered along the terminal edge portions 11a and 11c (±X direction). The chamfering at this time can be either an R chamfer or a C chamfer.

[0127] Therefore, the insulating edge portions 31a and 31c of the first insulating member 30 extend outward by a width W from the chamfered ends on the ±Y direction sides of the back surface of the first terminal 10 (conduction portion 11). In other words, the terminal edge portions 11a and 11c of the first terminal 10 are separated from the second portions 31a2 and 31c2 of the first insulating member 30 and extend outward in the ±Y direction.

[0128] With such a structure, the stacked terminal portion 5a can, in the same manner as the first embodiment, ensure the creepage distance between the first terminal 10 and the second terminal 20, can reduce the width of the first insulating member 30, and can achieve miniaturization. In addition, the electric field concentration between the first terminal 10 and the second terminal 20 can be alleviated.

[0129] In addition, the back sides (the ends (corners) on the second terminal 20 side of the conduction portion 11) of the terminal edge portions 11a and 11c of the first terminal 10 (conduction portion 11) are chamfered along the terminal edge portions 11a and 11c (±X direction). Therefore, the cross-sectional area of the first terminal 10 is larger than that of the stacked terminal portion 5. Therefore, the current-carrying capacity of the stacked terminal portion 5a increases.

[0130] (Modification 1-2)

[0131] Use Figure 11 The stacked terminal portion 5b of Modification 1-2 will be described. Figure 11 It is a cross-sectional view in the short side direction of the stacked terminal portion included in the semiconductor device of the first embodiment (Modification 1-2). It should be noted that Figure 11 is in the stacked terminal portion 5b and corresponds to Figure 4 the cross-sectional view of the portion corresponding to the single dotted line X-X.

[0132] Regarding the stacked terminal portion 5b of Modification Examples 1-2, in the stacked terminal portion 5 of the first embodiment, the widths of the first terminal 10 and the second terminal 20 in the ±Y directions are substantially equal. The width of the first insulating member 30 in the ±Y directions is wider than the widths of the first terminal 10 and the second terminal 20 in the ±Y directions. That is, the second portions 31a2 and 31c2 of the first insulating member 30 extend outward (in the ±Y directions) from the terminal edge portions 11a and 11c of the first terminal 10 and the terminal edge portions 21a and 21c of the second terminal 20.

[0133] In addition, when the stacked terminal portion 5b of Modification Examples 1-2 is viewed in the -X direction, the entire periphery of the second terminal 20 and the first insulating member 30 disposed on the front surface of the second terminal 20 is surrounded by the second insulating member 40. Further, the second insulating member 40 of Modification Examples 1-2 is configured with a thermosetting resin as the main component. The thermosetting resin is as described above, but here it may be, for example, an epoxy resin. The first terminal 10 (conductive portion 11) is disposed opposite to the second terminal 20 (conductive portion 21) on the front surface of such a second insulating member 40. Therefore, the second insulating member 40 is not limited to a heat-shrinkable tube or an insulating tape. Even when an epoxy resin is used, the stacked terminal portion 5b can ensure the creepage distance between the first terminal 10 and the second terminal 20 and reduce the width of the first insulating member 30 to achieve miniaturization in the same manner as the first embodiment. In addition, the electric field concentration between the first terminal 10 and the second terminal 20 can be alleviated.

[0134] (Modification Example 1-3)

[0135] Use Figure 12 The stacked terminal portion 5c of Modification Example 1-3 will be described. Figure 12 It is a cross-sectional view in the short side direction of the stacked terminal portion included in the semiconductor device of the first embodiment (Modification Example 1-3). It should be noted that Figure 12 is in the stacked terminal portion 5c and corresponds to Figure 4 the cross-sectional view of the portion corresponding to the single-dot chain line X-X.

[0136] Regarding the stacked terminal portion 5c of Modifications 1-3, in the stacked terminal portion 5 of the first embodiment, when viewed in the -X direction, the second insulating member 40 includes the second terminal 20 and the entire periphery of the first insulating member 30 within the insulating edge portion 41a, the insulating upper portion 41e, the insulating edge portion 41c, and the insulating lower portion 41f. However, it does not include the entire periphery of the second terminal 20 and the first insulating member 30. A gap 41h is provided in the insulating lower portion 41f of the second insulating member 40. In other words, when viewed in the -X direction, the second insulating member 40 includes the entire periphery of the second terminal 20 and the first insulating member 30 and forms a slit (gap 41h) that crosses in the ±X directions of the insulating lower portion 41f (on the opposite side of the second terminal 20) covering the back surface of the second terminal 20. In this case, for example, the second insulating member 40 can be in a strip shape, with a gap 41h provided at the back of the second terminal 20 and including the periphery of the second terminal 20 and the first insulating member 30.

[0137] With such a structure for the stacked terminal portion 5c as well, similar to the first embodiment, it is possible to ensure the creepage insulation distance between the first terminal 10 and the second terminal 20, reduce the width of the first insulating member 30, and achieve miniaturization. In addition, it is possible to alleviate the electric field concentration between the first terminal 10 and the second terminal 20.

[0138] In addition, a gap 41h (slit) is formed in the insulating lower portion 41f covering the back surface of the second terminal 20. Therefore, it is possible to maintain the creepage insulation distance from the terminal edge portions 11a, 11c of the first terminal 10 to the back surface of the second insulating member 40. It should be noted that the width of the gap 41h of the insulating lower portion 41f included in the second insulating member 40 in the ±Y directions needs to be a width that can ensure this creepage insulation distance. Therefore, the width of the gap 41h of the insulating lower portion 41f in the ±Y directions is preferably as narrow as possible.

[0139] Furthermore, even for the back surface of the second insulating member 40 of the stacked terminal portion 5a of Modification 1-1 and the stacked terminal portion 5b of Modification 1-2, a gap 41h can be formed in the same manner as in Modification 1-3. In this case as well, it is possible to maintain the creepage insulation distance from the terminal edge portions 11a, 11c of the first terminal 10 to the back surface of the second insulating member 40.

[0140] [Second Embodiment]

[0141] Regarding the stacked terminal portion of the second embodiment, in the stacked terminal portion 5 of the first embodiment, the first insulating member 30 is provided on the front surface of the second insulating member 40. An explanation is given for Figures 13 to 15 such a stacked terminal portion.

[0142] Figure 13It is a top view of the stacked terminal portion included in the semiconductor device of the second embodiment. Figure 14 It is a first cross-sectional view in the long side direction of the stacked terminal portion included in the semiconductor device of the second embodiment, Figure 15 It is a cross-sectional view in the short side direction of the stacked terminal portion included in the semiconductor device of the second embodiment. It should be noted that, Figure 13 Corresponding to the stacked terminal portion 5d Figure 3 of the top view. Figure 14 is Figure 13 a cross-sectional view taken along the single-dot chain line Y-Y of Figure 15 is Figure 13 a cross-sectional view taken along the single-dot chain line X-X of

[0143] The stacked terminal portion 5d also includes a first terminal 10, a second terminal 20, a first insulating member 30, and a second insulating member 40. The first terminal 10, the second terminal 20, the first insulating member 30, and the second insulating member 40 are made of the same materials as those of the stacked terminal portion 5 of the first embodiment. In addition, the width of the first terminal 10 (conductive portion 11) in the ±Y direction is substantially equal to the width of the second terminal 20 (conductive portion 21) in the same direction.

[0144] In the stacked terminal portion 5d, when viewed in the -X direction, the second insulating member 40 includes the entire periphery of the second terminal 20. The first insulating member 30 and the first terminal 10 are sequentially stacked on the front surface of the insulating upper portion 41e of the second insulating member 40.

[0145] When viewed in the -X direction (refer to Figure 15 ), the second insulating member 40 integrally includes an insulating edge portion 41a, an insulating upper portion 41e, an insulating edge portion 41c, and an insulating lower portion 41f, and the insulating edge portion 41a, the insulating upper portion 41e, the insulating edge portion 41c, and the insulating lower portion 41f include the entire periphery of the second terminal 20.

[0146] The insulating upper portion 41e of the second insulating member 40 is disposed between the first terminal 10 and the second terminal 20. In addition, the insulating upper portion 41e of the second insulating member 40 is in contact with the entire lower surfaces of the first part 31a1 and the second parts 31a2, 31c2, 31d2 of the first insulating member 30. The insulating upper portion 41e of the second insulating member 40 covers the entire front surface of the second terminal 20 in the ±Y direction. In addition, the insulating edge portions 41a, 41c of the second insulating member 40 cover the entire terminal edge portions 21a, 21c of the conduction portion 21 of the second terminal 20 in the ±Z direction. Further, the insulating lower portion 41f of the second insulating member 40 covers the entire back surface of the conduction portion 21 of the second terminal 20 in the ±Y direction. The insulating edge portions 41a, 41c of the second insulating member 40 are located at positions more outside in the ±Y direction than the terminal edge portions 21a, 21c of the second terminal 20. That is, the width of the second insulating member 40 in the ±Y direction is wider than the width of the second terminal 20 in the same direction.

[0147] In addition, the length of the second insulating member 40 in the ±X direction is substantially uniform as a whole. The insulating inner end portion 41b of the second insulating member 40 in the -X direction is located at substantially the same position as the end portion of the first terminal 10 (conduction portion 11) on the side opposite to the terminal outer end portion 11d. The insulating inner end portion 41b of the second insulating member 40 in the -X direction is located at substantially the same position as the end portion of the second terminal 20 (conduction portion 21) on the side opposite to the terminal outer end portion 21d. In addition, the insulating outer end portion 41d of the second insulating member 40 extends to a position outside the insulating outer end portion 31d of the first insulating member 40 in the +X direction and inside the terminal outer end portion 21d of the second terminal 20 in the -X direction. It should be noted that the front surface of the portion of the second terminal 20 extending more outside (in the +X direction) than the insulating outer end portion 41d of the second insulating member 40 is the exposed area 21e.

[0148] The first insulating member 30 is disposed on the front surface of the insulating upper portion 41e of the second insulating member 40. The width of the first insulating member 30 in the ±Y direction is substantially the same as the length of the width of the second insulating member 40 in the same direction. That is, when viewed in the -X direction, the insulating edge portions 31a, 31c of the first insulating member 30 are located at the same positions as the insulating edge portions 41a, 41c of the second insulating member 40. The portions (for example, Figure 15 the area surrounded by the dotted four sides) of such a first insulating member 30 that extend outward in the ±Y direction by a width W from the terminal edge portions 11a, 11c of the first terminal 10 are the second parts 31a2, 31c2. It should be noted that in the second embodiment, the back surface sides of the second parts 31a2, 31c2 of the first insulating member 30 are covered by the insulating upper portion 41e of the second insulating member 40.

[0149] Further, the insulating inner end portion 31b of the first insulating member 30 extends further in the -X direction than the end portions on the opposite sides (-X direction) of the insulating inner end portion 31b of the second insulating member 40, the terminal outer end portion 11d of the first terminal 10, and the terminal outer end portion 21d of the second terminal 20, respectively.

[0150] The insulating outer end portion 31d of the first insulating member 30 is located at a position that is more outward (+X direction) than the terminal outer end portion 11d of the first terminal 10 and more inward (-X direction) than the insulating outer end portion 41d of the second insulating member 40. The portion of the first insulating member 30 that extends more outward (+X direction) than the terminal outer end portion 11d of the conduction portion 11 of the first terminal 10 (for example, Figure 14 the region surrounded by the four dotted lines) is also the second portion 31d2. That is, the second portion 31d2 of the first insulating member 30 is the portion exposed from the housing 2 and the conduction portion 11 of the first terminal 10, and its front surface is the exposed region (reference numeral omitted). It should be noted that the portion of the front surface of the second insulating member 40 exposed from the housing 2 and the first insulating member 30 is the exposed region 41g.

[0151] Here, the case where the insulating outer end portion 31d of the first insulating member 30 is located more inward (-X direction) than the insulating outer end portion 41d of the second insulating member 40 is illustrated in a top view. Without being limited to this case, the insulating outer end portion 31d of the first insulating member 30 may also be at the same position as the insulating outer end portion 41d of the second insulating member 40.

[0152] Therefore, in the stacked terminal portion 5d of the second embodiment, the second portions 31a2, 31c2, 31d2 of the first insulating member 30 extend outward from the terminal edge portions 11a, 11c and the terminal outer end portion 11d of the first terminal 10. In particular, when the second portions 31a2, 31c2, 31d2 extend from the first terminal 10 by 0.5 mm or more, the insulation between the first terminal 10 and the second terminal 20 can be more reliably maintained. In addition, the insulating property of the first insulating member 30 is higher than that of the second insulating member 40, and the first insulating member 30 and the second insulating member 40 are provided between the first terminal 10 and the second terminal 20. Therefore, the distance between the first terminal 10 and the second terminal 20 can be kept constant, and in addition, the electric field concentration between the second terminals 20 directly below the terminal edge portions 11a, 11c and the terminal outer end portion 11d of the first terminal 10 can be alleviated and the insulation can be maintained. Therefore, with such a structure, the stacked terminal portion 5d can ensure the creepage insulation distance between the first terminal 10 and the second terminal 20, and can reduce the width of the first insulating member 30, enabling miniaturization. In addition, the electric field concentration between the first terminal 10 and the second terminal 20 can be alleviated. Therefore, the semiconductor device 1 including the stacked terminal portion 5 can maintain reliability and achieve miniaturization.

[0153] In addition, the first terminal 10 of the stacked terminal portion 5d may be chamfered as in Modification 1-1. The second insulating member 40 of the stacked terminal portion 5d may be made of a thermosetting resin as in Modification 1-2. Further, a gap 41h may be formed on the back surface of the second insulating member 40 of the stacked terminal portion 5d as in Modification 1-3.

[0154] [Third Embodiment]

[0155] In the semiconductor device of the third embodiment, the stacked terminal portion 5 included in the semiconductor device 1 of the first embodiment further includes a third terminal. A description will be given of such a semiconductor device. Figures 16 to 19 A description will be given of such a semiconductor device. Figure 16 FIG. is a side view of the semiconductor device of the third embodiment, Figure 17 FIG. is a top view of the semiconductor device of the third embodiment. Figure 18 FIG. is a cross-sectional view of the stacked terminal portion included in the semiconductor device of the third embodiment in the longitudinal direction, Figure 19 FIG. is a cross-sectional view of the stacked terminal portion included in the semiconductor device of the third embodiment in the short-side direction. It should be noted that, Figure 16 FIG. is a side view of the semiconductor device 1a viewed along the +Y direction. Figure 17 FIG. is a top view of the semiconductor device 1a viewed along the -Z direction. In addition, Figure 18 FIG. is Figure 17 a cross-sectional view taken along the single-dot chain line Y-Y in FIG. Figure 19 FIG. is Figure 17 a cross-sectional view taken along the single-dot chain line X-X in FIG. It should be noted that the reference numerals corresponding to the structures of the first terminal 10, the second terminal 20, the first insulating member 30, and the second insulating member 40 may sometimes be omitted from Figures 16 to 19 . For these reference numerals, reference may be made to Figures 4 to 7 .

[0156] The semiconductor device 1a includes at least a housing 2, external terminals 7, control terminals 4, and a stacked terminal portion 6. The housing 2 and the control terminals 4 are as described in the first embodiment. It should be noted that, compared with the case of the semiconductor device 1, the control terminals 4 of the semiconductor device 1a are provided along the side surface 2d on the side surface 2d side of the top surface 2e of the housing 2.

[0157] The external terminals 7 are made of the same material as the output terminals 3 of the first embodiment. The external terminals 7 are electrically connected to a predetermined conductive pattern of the insulating circuit board within the housing 2 and extend outward from the side surface 2b of the housing 2 perpendicular to the side surface 2b (-X direction). The external terminals 7 are respectively connected to a positive terminal (P terminal) and a negative terminal (N terminal) from the outside.

[0158] The stacked terminal portion 6 is electrically connected to a predetermined conductive pattern of the insulating circuit board within the housing 2 and extends outward from the side surface 2d of the housing 2. At this time, the stacked terminal portion 6 extends perpendicularly (+X direction) with respect to the side surface 2d. The stacked terminal portion 6 includes three-phase output terminals (U terminal, V terminal, W terminal). Such a stacked terminal portion 6 further includes a third terminal 50, a third insulating member 60, and a fourth insulating member 70 on the back side of the second insulating member 40 of the stacked terminal portion 5 in the first embodiment. The first terminal 10 included in the stacked terminal portion 6 functions as the U terminal, the second terminal 20 functions as the V terminal, and the third terminal 50 functions as the W terminal.

[0159] The third terminal 50 also integrally includes a conduction portion 51 and a connection portion and a joining portion (not shown). The thickness of the third terminal 50 is substantially uniform as a whole. The stacked terminal portion 6 extends outward from the side surface 2d of the housing 2 in the +X direction. In addition, a part of the stacked terminal portion 6 extends inward (-X direction) from the side surface 2d of the housing 2. A part of the stacked terminal portion 6 that is inward from the side surface 2d is fixed to the housing 2. At this time, an exposed area of the stacked terminal portion 6 described later is exposed to the outside.

[0160] The conduction portion 51 is rectangular in plan view and is in a flat plate shape. The conduction portion 51 includes terminal edge portions 51a, 51c provided on the side portions of the front and back surfaces of the rectangular shape in plan view and terminal outer end portions 51d provided on the front end portions of the front and back surfaces. The side portions and the front end portions are as described in the first embodiment. The portion of the front surface of the conduction portion 51 that extends and is exposed from the side surface 2d of the housing 2 and the fourth insulating member 70 is the exposed area 51e (see Figure 17 ).

[0161] In addition, the width of the conduction portion 51 in the ±Y direction is larger than the width of the conduction portion 21 of the second terminal 20 in the same direction. That is, the terminal edge portions 51a, 51c of the conduction portion 51 are located at positions more outward in the ±Y direction than the terminal edge portions 21a, 21c of the second terminal 20.

[0162] The connection portion (not shown) is formed at the end portion of the conduction portion 51 on the side opposite to the terminal outer end portion 51d (-X direction). The joining portion (not shown) is rectangular in plan view and is in a flat plate shape. When viewed in the +Y direction, the joining portion is located on the side closer to the bottom surface 2f of the housing 2 than the conduction portion. The joining portion is integrally connected to the conduction portion with different heights via the connection portion. The joining portion is joined to a predetermined conductive pattern of the insulating circuit board (not shown). It should be noted that the joining at this time can be the above-mentioned joining member or ultrasonic joining.

[0163] It should be noted that these connecting portions and joining portions can be formed on the conduction portion 51 in such a manner that they do not overlap with the connecting portion 12 and the joining portion 13 of the first terminal 10 and the connecting portion 22 and the joining portion 23 of the second terminal 20 in a top view.

[0164] The third insulating member 60 is disposed between the front surface of the conduction portion 51 of the third terminal 50 and the back surface of the conduction portion 21 of the second terminal 20. Specifically, on the front surface of the third terminal 50 (conduction portion 51), the back surface of the conduction portion 21 of the second terminal 20 is disposed with the fourth insulating member 70 and the second insulating member 40 therebetween. The third insulating member 60 can be made of the same material as the first insulating member 30.

[0165] The third insulating member 60 includes a third portion 61a1 and fourth portions 61a2, 61c2, 61d2. In addition, the third insulating member 60 is rectangular in a top view and includes insulating edge portions 61a, insulating inner end portions (not shown), insulating edge portions 61c, and insulating outer end portions 61d that surround the front and back surfaces in a top view. The insulating edge portions 61a, 61c are disposed on the side portions of the third insulating member 60. This side portion refers to the side portion parallel to the extending direction (+X direction) of the stacked terminal portion 6. That is, the insulating edge portions 61a, 61c are substantially parallel to the side surfaces 2a, 2c of the housing 2, the terminal edge portions 11a, 11c of the first terminal 10, the terminal edge portions 21a, 21c of the second terminal 20, and the terminal edge portions 51a, 51c of the third terminal 50.

[0166] The third portion 61a1 of the third insulating member 60 is the portion sandwiched between the second terminal 20 and the third terminal 50. In the case of the third embodiment, the third portion 61a1 faces the lower surface of the conduction portion 21 of the second terminal 20. In addition, in the third embodiment, the width of the third insulating member 60 in the ±Y direction is substantially equal to the width of the conduction portion 51 of the third terminal 50 in the same direction. That is, the insulating edge portions 31a, 31c of the third insulating member 60 are located at the same positions as the terminal edge portions 51a, 51c of the conduction portion 51 of the third terminal 50. The width of the third insulating member 60 in the ±Y direction is wider than the width of the conduction portion 21 of the second terminal 20 in the same direction. The insulating edge portions 61a, 61c of the third insulating member 60 are located at positions more outward in the ±Y direction than the terminal edge portions 21a, 21c of the conduction portion 21 of the second terminal 20. Thus, the insulating edge portions 61a, 61c of the third insulating member 60 extend more outward in the ±Y direction than the terminal edge portions 21a, 21c of the conduction portion 21 of the second terminal 20 (for example, Figure 19The regions surrounded by the four dashed lines) are the fourth parts 61a2 and 61c2. It should be noted that the fourth parts 61a2 and 61c2 of the third insulating member 60 extend outward (±Y direction) by a width W from the terminal edge portions 21a and 21c of the second terminal 20 (the ends of the bottom surface parallel to the third terminal 50).

[0167] The insulating inner end (not shown) is the end on the -X direction inner side of the third insulating member 60. That is, the insulating inner end is substantially orthogonal to the side surfaces 2a and 2c of the housing 2, the terminal edge portions 21a and 21c of the second terminal 20, and the terminal edge portions 51a and 51c of the third terminal 50. In addition, the insulating inner end extends further in the -X direction than the ends on the opposite side (-X direction) of the terminal outer end portions 21d of the second terminal 20 and the terminal outer end portions 51d of the third terminal 50 respectively.

[0168] The insulating outer end 61d is the end on the +X direction outer side of the third insulating member 60. The insulating outer end 61d is substantially parallel to the side surfaces 2b and 2d of the housing 2, the terminal outer end portions 21d of the second terminal 20, and the terminal outer end portions 51d of the third terminal 50. The insulating outer end 61d is located at a position that is more on the +X direction outer side than the terminal outer end portion 21d of the second terminal 20 and more on the -X direction inner side than the terminal outer end portion 51d of the third terminal 50. The portion of the front surface of the third insulating member 60 exposed from the conduction portion 21 of the housing 2 and the second terminal 20 is the exposed region (reference numeral omitted). Thus, the portion of the insulating outer end 61d of the third insulating member 60 that extends further in the +X direction outer side than the terminal outer end portion 21d of the conduction portion 21 of the second terminal 20 (for example, Figure 18 the range surrounded by the dashed line shown) is also the fourth part 61d2. It should be noted that the front surface of the fourth part 61d2 of the third insulating member 60 corresponds to the exposed region (reference numeral omitted). The length of the fourth part 61d2 of the third insulating member 60 in the ±X direction only needs to be a length that maintains the insulation between the terminal outer end portion 21d of the second terminal 20 and the third terminal 50. This length is, for example, about 10 mm.

[0169] A part of the fourth insulating member 70 (the insulating upper part 71e) is disposed between the second terminal 20 and the third terminal 50. In addition, the insulating upper part 71e of the fourth insulating member 70 is in contact with the entire upper surfaces of the third part 61a1 and the fourth parts 61a2, 61c2, and 61d2 of the third insulating member 60. It should be noted that the fourth insulating member 70 can be made of the same material as the second insulating member 40 of the first embodiment.

[0170] Among them, in the third embodiment, the fourth insulating member 70 includes an insulating upper portion 71e that is in contact with the entire surfaces of the third portion 61a1 and the fourth portions 61a2, 61c2, and 61d2, and integrally includes the third insulating member 60 and the third terminal 50. As Figure 19 shown, such a fourth insulating member 70 integrally includes, when viewed in the -X direction: an insulating upper portion 71e that includes the third insulating member 60 and the third terminal 50, and insulating edge portions 71a, 71c, and an insulating lower portion 71f.

[0171] The insulating upper portion 71e of the fourth insulating member 70 covers the entire front surface of the third insulating member 60 in the ±Y direction. In addition, the insulating edge portions 71a and 71c of the fourth insulating member 70 cover the entire insulating edge portions 61a and 61c of the third insulating member 60 and the terminal edge portions 51a and 51c of the conduction portion 51 of the third terminal 50 in the ±Z direction. Further, the insulating lower portion 71f of the fourth insulating member 70 covers the entire back surface of the conduction portion 51 of the third terminal 50 in the ±Y direction.

[0172] The overall length of the fourth insulating member 70 in the ±X direction is substantially uniform. The end portion of the fourth insulating member 70 in the -X direction is located at a position substantially the same as the end portion of the second terminal 20 (conduction portion 21) on the side opposite to the terminal outer end portion 21d. The end portion of the fourth insulating member 70 in the -X direction is located at a position substantially the same as the end portion of the third terminal 50 (conduction portion 51) on the side opposite to the terminal outer end portion 51d. In addition, the insulating outer end portion 71d of the fourth insulating member 70 is located at a position substantially the same as the insulating outer end portion 61d of the third insulating member 60. It should be noted that the portion of the front surface of the fourth insulating member 70 that is exposed from the housing 2, the second insulating member 40, and the second terminal 20 is the exposed area 71g.

[0173] Therefore, in the semiconductor device 1a including such a stacked terminal portion 6, the fourth portions 61a2, 61c2, 61d2 of the third insulating member 60 also extend outward from the terminal edge portions 21a, 21c and the terminal outer end portion 21d of the second terminal 20. Moreover, the insulating upper portion 71e of the fourth insulating member 70 is in contact with the third portion 61a1 and the fourth portions 61a2, 61c2, 61d2 of the third insulating member 60. Therefore, damage to the insulating edge portions 71a, 71c of the fourth insulating member 70 is prevented. In addition, the insulating property of the third insulating member 60 is higher than that of the fourth insulating member 70, and the third insulating member 60 and the fourth insulating member 70 are provided between the second terminal 20 and the third terminal 50. Therefore, the distance between the second terminal 20 and the third terminal 50 can be maintained constant, and in addition, the electric field concentration between the third terminals 50 directly below the terminal edge portions 21a, 21c and the terminal outer end portion 21d of the second terminal 20 can be alleviated, and the insulation property can be maintained. Therefore, the stacked terminal portion 6 can ensure the creepage insulation distance between the second terminal 20 and the third terminal 50 through such a structure, reduce the width of the third insulating member 60, and can achieve miniaturization.

[0174] Next, various modification examples of the stacked terminal portion 6 of the third embodiment will be described below with reference to the drawings. It should be noted that in the following, unless otherwise specified, the first terminal 10, the second terminal 20, the first insulating member 30, the second insulating member 40, the third terminal 50, and the third insulating member 60 may be made of the same materials as those in the third embodiment.

[0175] (Modification Example 3-1)

[0176] Use Figure 20 to describe the stacked terminal portion 6a of Modification Example 3-1. Figure 20 is a cross-sectional view in the short side direction of the stacked terminal portion included in the semiconductor device of the third embodiment (Modification Example 3-1). It should be noted that Figure 20 is the cross-sectional view of the portion of the stacked terminal portion 6a corresponding to Figure 17 the single dotted line X-X.

[0177] Similar to Modification Example 1-2, the stacked terminal portion 6a of Modification Example 3-1 includes the first terminal 10, the second terminal 20, the first insulating member 30, the third terminal 50, and the third insulating member 60 of the stacked terminal portion 6 of the third embodiment by using the second insulating member 40.

[0178] It should be noted that in the stacked terminal portion 6a, the widths of the first terminal 10, the second terminal 20, and the third terminal 50 in the ±Y direction are equal. In addition, the widths of the first insulating member 30 and the third insulating member 60 in the ±Y direction are equal and wider than the widths of the first terminal 10, the second terminal 20, and the third terminal 50 in the same direction. It should be noted that the lengths of the first terminal 10, the second terminal 20, the first insulating member 30, the third terminal 50, and the second insulating member 60 in the ±X direction are the same as those of the stacked terminal portion 6.

[0179] When the second insulating member 40 is viewed in the -X direction, the entire periphery of the first insulating member 30, the second terminal 20, the third insulating member 60, and the third terminal 50 is surrounded by the insulating edge portion 41a, the insulating upper portion 41e, the insulating edge portion 41c, and the insulating lower portion 41f. In addition, when the second insulating member 40 is viewed in the -X direction, an insulating middle portion 41i (fourth insulating member) is disposed between the second terminal 20 and the third insulating member 60. The second insulating member 40 integrally includes the insulating edge portion 41a, the insulating upper portion 41e, the insulating edge portion 41c, the insulating lower portion 41f, and the insulating middle portion 41i. In addition, the second insulating member 40 is configured with the same material as the second insulating member 40 of the modified example 1-2 as the main component.

[0180] The second terminal 20 (conductive portion 21) and the third terminal 50 (conductive portion 21) are disposed opposite to each other on such a second insulating member 40. Therefore, the second insulating member 40 is not limited to a heat-shrinkable tube or an insulating tape. Even when epoxy resin is used, the stacked terminal portion 6a can ensure the creepage distance between the second terminal 20 and the third terminal 50 in the same manner as in the third embodiment, and can reduce the width of the third insulating member 60, enabling miniaturization. In addition, the electric field concentration between the second terminal 20 and the third terminal 50 can be alleviated.

[0181] It should be noted that the modified examples 1-1 and 1-3 of the first embodiment can also be applied to the stacked terminal portion 6 of the third embodiment. In addition, for the stacked terminal portion 5d of the second embodiment, the third terminal 50 included by the third insulating member 60 and the fourth insulating member 70 can be sequentially disposed on the back side of the second insulating member 40 as in the third embodiment.

[0182] Only the principle of the present invention is shown above. In addition, those skilled in the art can make various deformations and changes, and the present invention is not limited to the exact structures and application examples shown and described above. All corresponding modified examples and equivalents are regarded as being within the scope of the present invention defined by the appended claims and their equivalents.

Claims

1. A semiconductor device, characterized in that, Comprising: A first terminal, which is plate-shaped; A second terminal, which is opposite to the first terminal and is plate-shaped; A first insulating member, which has a first portion sandwiched between the first terminal and the second terminal, and a second portion extending outward a predetermined distance from an end of the bottom surface of the first terminal parallel to the second terminal; A second insulating member, a part of which is disposed between the first terminal and the second terminal and is in contact with the first portion and the second portion of the first insulating member; and A housing, which fixes the first terminal, the second insulating member, the first insulating member, and the second terminal.

2. The semiconductor device according to claim 1, wherein: The second insulating member is disposed between the first terminal and the first insulating member.

3. The semiconductor device according to claim 1 or 2, wherein: The second insulating member wraps and fixes the first insulating member and the second terminal.

4. The semiconductor device according to claim 3, wherein: The second insulating member is a heat shrinkable tube or epoxy resin.

5. The semiconductor device according to claim 1 or 2, wherein: An end of the first terminal on the side of the second insulating member is chamfered, and the chamfered end is separated from the second portion and extends outward.

6. The semiconductor device according to claim 1 or 2, wherein: The width of the first terminal is the same as the width of the second terminal, and the second portion of the first insulating member extends more outward than the end of the second terminal.

7. The semiconductor device according to claim 3, wherein: The second insulating member has a slit on a surface opposite to the second terminal.

8. The semiconductor device according to claim 1, wherein: The second insulating member is disposed between the first insulating member and the second terminal.

9. The semiconductor device according to claim 8, wherein: The second insulating member wraps the second terminal, An end of the first insulating member and an end of the second insulating member are in the same plane.

10. The semiconductor device according to claim 1 or 2, wherein: The width of the second portion is 0.5 mm or more.

11. The semiconductor device according to claim 1 or 2, wherein: The dielectric breakdown strength of the first insulating member is higher than that of the second insulating member.

12. The semiconductor device according to claim 1 or 2, wherein: The Young's modulus of the first insulating member is higher than that of the second insulating member.

13. The semiconductor device according to claim 1 or 2, wherein: The current flow direction of the first terminal is opposite to the current flow direction of the second terminal.

14. The semiconductor device according to claim 1 or 8, characterized in that, Comprising: A third terminal, which is opposite to a surface of the second terminal opposite to the first terminal and is plate-shaped; A third insulating member having a third portion sandwiched between the second terminal and the third terminal, and a fourth portion extending outward a predetermined distance from an end of a bottom surface of the second terminal parallel to the third terminal; and A fourth insulating member, a part of which is disposed between the second terminal and the third terminal and is in contact with the third portion and the fourth portion of the third insulating member, and the housing further fixes the third terminal, the third insulating member, and the fourth insulating member.

15. The semiconductor device according to claim 14, wherein: The fourth insulating member wraps and fixes the third insulating member and the third terminal.

16. The semiconductor device according to claim 15, wherein: The fourth insulating member is a heat shrinkable tube or epoxy resin.

17. The semiconductor device according to claim 14, wherein: The fourth insulating member is disposed between the second terminal and the third insulating member.

18. The semiconductor device according to claim 14, wherein: The width of the third portion is 0.5 mm or more.

19. The semiconductor device according to claim 14, wherein: The current flowing direction of the third terminal is opposite to the current flowing direction of the second terminal.

20. The semiconductor device according to claim 14, wherein: The fourth insulating member wraps the third terminal, The fourth insulating member is disposed between the third insulating member and the third terminal, and the end of the third insulating member and the end of the fourth insulating member are in the same plane.

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