Plasma processing apparatus and method for controlling plasma processing apparatus

Abstract

The purpose of the present invention is to provide a plasma processing apparatus capable of sufficiently confirming the state of plasma in a processing chamber with a simple configuration. A plasma processing device (1, 201) is provided with: at least one antenna (71-73); and a plurality of light receiving units (PD1-PD5) for detecting the light emission intensity of the plasma generation region, the plurality of light receiving units including a first light receiving unit (PD1) and a second light receiving unit (PD2), the first light receiving unit (PD1) and the second light receiving unit (PD2) being arranged along a first direction in which the at least one antenna extends.

Description

Technical Field

[0001] The present invention relates to a plasma processing apparatus and a control method for a plasma processing apparatus. Background Art

[0002] There is known a plasma processing apparatus that generates an inductively coupled plasma by passing a high-frequency current through an antenna provided in a processing chamber (vacuum container) to perform plasma processing on a substrate. Various methods for detecting the plasma state in the processing chamber have been proposed. For example, Patent Document 1 discloses a plasma processing apparatus that detects the light emission state of the plasma formed in the processing chamber by a plasma light emission state detection unit and adjusts the characteristics of the antenna circuit based on the detection information of the plasma light emission state detection unit.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2009-147301 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] Here, the plasma state detection unit of Patent Document 1 is provided at positions corresponding to the central portion and the edge portion of the substrate, and detects the plasma light emission states of the central portion and the edge portion of the substrate. In such a configuration, the plasma state detection unit cannot, for example, monitor the plasma light emission state in the direction along one side of the substrate. That is, in Patent Document 1, there are problems such as the in-plane distribution of the plasma in the processing chamber not being able to be sufficiently confirmed.

[0008] An object of an embodiment of the present invention is to provide a plasma processing apparatus that can sufficiently confirm the plasma state in the processing chamber with a simple structure.

[0009] Means for Solving the Problems

[0010] To solve the above problems, a plasma processing apparatus according to an embodiment of the present invention includes: at least one antenna that generates plasma in a vacuum container; and a plurality of light receiving units that detect the light emission intensity of a plasma generation region, the plurality of light receiving units including a first light receiving unit and a second light receiving unit, the first light receiving unit and the second light receiving unit being arranged along a first direction in which the at least one antenna extends.

[0011] To solve the above problems, a plasma processing apparatus according to an embodiment of the present invention includes: a first antenna and a second antenna that generate plasma in a vacuum chamber; and a plurality of light receiving units that detect the light emission intensity of a plasma generation region. The plurality of light receiving units include a third light receiving unit and a fourth light receiving unit. The third light receiving unit and the fourth light receiving unit are arranged along a second direction in which the first antenna and the second antenna are arranged, and respectively correspond to the first antenna and the second antenna.

[0012] To solve the above problems, a control method for a plasma processing apparatus according to an embodiment of the present invention is a method for controlling a plasma processing apparatus. The plasma processing apparatus includes: at least one antenna that generates plasma in a vacuum chamber; a plurality of light receiving units that detect the light emission intensity of a plasma generation region; and a ground side impedance adjustment unit that is connected to a ground side end of the antenna and has a variable impedance. The plurality of light receiving units include a first light receiving unit and a second light receiving unit. The first light receiving unit and the second light receiving unit are arranged along a first direction in which the antenna extends. The control method for the plasma processing apparatus includes: a first detection step of detecting a first light emission intensity of a plasma generation region corresponding to the first light receiving unit through the first light receiving unit; a second detection step of detecting a second light emission intensity of a plasma generation region corresponding to the second light receiving unit through the second light receiving unit; and a control step of controlling the impedance of the ground side impedance adjustment unit based on the first light emission intensity and the second light emission intensity.

[0013] To solve the above problems, a control method for a plasma processing apparatus according to an embodiment of the present invention is a method for controlling a plasma processing apparatus. The plasma processing apparatus includes: a first antenna and a second antenna that generate plasma in a vacuum chamber; and a plurality of light receiving units that detect the light emission intensity of a plasma generation region. The plurality of light receiving units include a third light receiving unit and a fourth light receiving unit. The third light receiving unit and the fourth light receiving unit are arranged along a second direction in which the first antenna and the second antenna are arranged, and respectively correspond to the first antenna and the second antenna. The control method for the plasma processing apparatus includes: a third detection step of detecting a third light emission intensity of a plasma generation region corresponding to the third light receiving unit through the third light receiving unit; a fourth detection step of detecting a fourth light emission intensity of a plasma generation region corresponding to the fourth light receiving unit through the fourth light receiving unit; and a control step of controlling the high-frequency power supplied to the first antenna and the second antenna respectively based on the third light emission intensity and the fourth light emission intensity.

[0014] Effects of the Invention

[0015] According to an embodiment of the present invention, the plasma state in the processing chamber can be sufficiently confirmed through a simple structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a front sectional view of a plasma processing apparatus according to an embodiment of the present invention.

[0017] Figure 2 is a side sectional view of the plasma processing apparatus.

[0018] Figure 3 is a top sectional view of the plasma processing apparatus.

[0019] Figure 4 is a functional block diagram showing the main part structure of a monitoring device of the plasma processing apparatus.

[0020] Figure 5 is a diagram schematically showing the arrangement relationship between a light receiving unit and an antenna circuit of the plasma processing apparatus.

[0021] Figure 6 is a flowchart showing an example of processing executed by the monitoring device.

[0022] Figure 7 is a flowchart showing another example of processing executed by the monitoring device.

[0023] Figure 8 is a flowchart showing still another example of processing executed by the monitoring device.

[0024] Figure 9 is a diagram schematically showing the arrangement relationship between a light receiving unit and an antenna circuit of a plasma processing apparatus according to another embodiment of the present invention.

[0025] Figure 10 is a flowchart showing an example of processing executed by the monitoring device. DETAILED DESCRIPTION OF THE INVENTION

[0026] [Embodiment 1]

[0027] Figure 1 is a front sectional view obtained by cutting the plasma processing apparatus 1 along a cross section including one antenna 7. Figure 2 is a side sectional view obtained by cutting the plasma processing apparatus 1 along a cross section perpendicular to the extending directions of a plurality of antennas 71 to 73. Figure 3 is a top sectional view obtained by cutting the plasma processing apparatus 1 along a cross section including the light receiving unit PD. In addition, in Figure 3 ​​​​​​​​​​Also hypothetically shown is the position of the stage 6 and multiple antennas 71 to 73 in the plasma processing apparatus 1 when the plasma processing apparatus 1 is viewed from above. First, the following will refer to Figures 1 to 3 to explain the schematic structure of the plasma processing apparatus 1.

[0028] <Structure of Plasma Processing Apparatus 1>

[0029] As Figure 1 shown, the plasma processing apparatus 1 includes a housing 2, a flange 3, a vacuum cover 4, an antenna cover 5, a stage 6, antennas 7, a high-frequency power supply 8, a light receiving unit PD, an impedance adjustment unit, and a monitoring device 10. In the plasma processing apparatus 1, a high-frequency voltage is applied from the high-frequency power supply 8 to the antennas 7, so that a high-frequency current flows through the antennas 7. Thereby, an induced electric field is generated in the housing 2, and an inductively coupled plasma is generated. The plasma processing apparatus 1 uses such an inductively coupled plasma to perform a predetermined plasma process on the substrate W disposed in the housing 2.

[0030] Here, the substrate W is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic electro-luminescence (EL) display, or a flexible substrate. In addition, the plasma process performed on the substrate W is, for example, film formation, etching, ashing, sputtering, etc. based on the plasma chemical vapor deposition (CVD) method.

[0031] In addition, the plasma processing apparatus 1 is also called a plasma CVD apparatus when performing film formation by the plasma CVD method, a plasma etching apparatus when performing etching, a plasma ashing apparatus when performing ashing, and a plasma sputtering apparatus when performing sputtering.

[0032] In addition, the plasma processing apparatus 1 can also perform a cleaning process for cleaning substances attached to the side wall of the housing 2 after performing plasma processing using an inductively coupled plasma.

[0033] As Figure 2 and Figure 3As shown, in the plasma processing apparatus 1, a plurality of antennas 71 to 73 (first antenna 71, second antenna 72, and third antenna 73) are arranged. Here, when it is not necessary to particularly distinguish the plurality of antennas 71 to 73, they are simply referred to as antenna 7. The vacuum chamber 4 and the antenna cover 5 described later are provided for each antenna 7. Hereinafter, in the plasma processing apparatus 1, the side where the antenna 7 is provided is referred to as the upper side, and the side where the stage 6 is provided is referred to as the lower side. In addition, the direction in which the plurality of antennas 7 extend is referred to as the left-right direction (first direction), and the direction in which the plurality of antennas 7 are arranged is referred to as the front-back direction (second direction). Further, in the present embodiment, an example in which three antennas, namely the first antenna 71, the second antenna 72, and the third antenna 73, are provided in the plasma processing apparatus 1 is shown, but the number of antennas 7 is not limited to this.

[0034] In addition, as Figure 3 shown, in the plasma processing apparatus 1, a plurality of light receiving portions PD1 to PD5 for detecting the light emission intensity of the plasma generation region HA are provided. Here, when it is not necessary to particularly distinguish the plurality of light receiving portions PD1 to PD5, they are simply referred to as the light receiving portion PD.

[0035] <Frame 2>

[0036] The frame 2 includes a frame main body 2a that forms a processing chamber for performing the specified plasma processing on the substrate W. The frame main body 2a is a box-shaped member that is open at the upper side.

[0037] A flange 3 having a plurality of openings is airtightly attached to the opening portion (frame opening portion 2b) of the frame main body 2a. The plurality of openings of the flange 3 are closed by the vacuum chamber 4. In other words, when the flange 3 and the vacuum chamber 4 are attached to the upper surface side of the frame 2, the frame opening portion 2b is closed by the flange 3 and the vacuum chamber 4. Thus, by airtightly attaching the flange 3 and the vacuum chamber 4 to the frame main body 2a and the flange 3, respectively, the frame 2 forms a vacuum container including the processing chamber.

[0038] In addition, by installing an antenna cover 5, which will be described later, inside the frame opening portion 2b, the internal space of the frame 2 is demarcated, and thus a plasma generation region HA is formed inside the frame main body 2a. The stage 6 and the substrate W supported by the stage 6 are arranged inside the plasma generation region HA, and the plasma generation region HA substantially forms the processing chamber. In other words, in the frame 2, the plasma generation region HA and the plasma non-generation region (antenna accommodation space AK, which will be described later) are separated from each other by the antenna cover 5.

[0039] In addition, as Figure 1As shown, in the housing 2, a vacuum pump PO is connected to the housing main body 2a. The inside of the plasma generation region HA is brought to a predetermined degree of vacuum by the vacuum pump PO at least during plasma processing.

[0040] In addition, the housing 2 may also include a processing gas supply unit (not shown), which introduces a processing gas corresponding to the predetermined plasma processing into the inside of the plasma generation region HA (processing chamber) that has reached a predetermined degree of vacuum. The plasma processing is performed in the environment of the processing gas. In addition, the processing gas is, for example, argon, hydrogen, nitrogen, silane, methane, oxygen, or nitrogen trifluoride.

[0041] <Flange 3>

[0042] The flange 3 includes, for example, a rectangular-shaped housing having two first side portions 3a facing each other ( Figure 2 ), and two second side portions 3b orthogonal to the first side portions 3a and facing each other ( Figure 1 ). In addition, the flange 3 includes, for example, a third side portion 3c and a fourth side portion 3d, which are provided inside the housing from one second side portion 3b to the other second side portion 3b. In other words, both ends of these third side portion 3c and fourth side portion 3d are continuously formed with the second side portion 3b. The third side portion 3c and the fourth side portion 3d may be formed between the two first side portions 3a in a manner parallel to the first side portions 3a.

[0043] In addition, the first side portion 3a, the second side portion 3b, the third side portion 3c, and the fourth side portion 3d may each have a protruding portion, which will be described later, protruding toward the opening 2b of the housing. Hereinafter, the first side portion 3a, the second side portion 3b, the third side portion 3c, and the fourth side portion 3d are collectively referred to as the side portion 3h.

[0044] <Vacuum cover 4>

[0045] In addition, in the plasma processing apparatus 1, a vacuum cover 4 that closes the housing opening 2b is configured to be detachably mounted on the housing opening 2b. Here, the flange 3 may have a protruding portion that is formed to gradually reduce the opening area of the housing opening 2b in the direction from the outside of the processing chamber toward the inside of the processing chamber. For example, each of the first side portion 3a, the third side portion 3c, and the fourth side portion 3d may have a first support portion that protrudes inside the housing opening 2b to engage with the peripheral edge portion of the vacuum cover 4. The first support portion may be a part of the protruding portion. In addition, the vacuum cover 4 is an example of an outer cover, abuts against the upper surface of the second side portion 3b, and abuts against and is supported by the upper surfaces of the first support portions of the first side portion 3a, the third side portion 3c, and the fourth side portion 3d. The vacuum cover 4 is, for example, made of metal.

[0046] <Antenna cover 5>

[0047] In addition, in the plasma processing apparatus 1, the antenna cover 5 is detachably supported by the flange 3 inside the opening 2b of the housing. Specifically, as Figure 1 and Figure 2 shown, the antenna cover 5 includes, for example, an antenna housing portion 5a configured to have a U-shaped cross section. In addition, the antenna cover 5 includes a cover support portion 5b and a cover opening portion 5c. The antenna cover 5 is made of a dielectric material such as alumina, for example, and forms an inner cover having dielectric properties.

[0048] The antenna housing portion 5a is formed to correspond to the shape of the antenna 7. The antenna housing portion 5a is configured to have a shape that covers a part of the outer peripheral surface of the antenna 7 in a state where the antenna 7 is mounted.

[0049] The cover support portion 5b is a flange portion that is continuously formed from both ends of the antenna housing portion 5a having a U-shaped cross section and is formed to protrude outward from the end of the antenna housing portion 5a. That is, the cover support portion 5b has an outward flange shape.

[0050] Here, for example, the edge portion 3h of the flange 3 may have a second support portion that protrudes inside the opening 2b of the housing to engage with the peripheral edge portion of the antenna cover 5. The second support portion is a part of the protruding portion and protrudes more toward the inside of the opening 2b of the housing (has a larger protruding length) than the first support portion. In a state where the antenna cover 5 is supported inside the opening 2b of the housing, the cover support portion 5b is supported by the edge portion 3h (the second support portion) of the flange 3.

[0051] The cover opening portion 5c is an opening formed by being surrounded by the antenna housing portion 5a. The cover opening portion 5c is provided to open on the side of the vacuum cover 4.

[0052] In addition, an antenna accommodation space AK surrounded by at least the vacuum cover 4 and the antenna cover 5 is formed in the housing 2. The antenna accommodation space AK is an example of an enclosed space and houses an antenna 7 for generating inductively coupled plasma. Among them, in the antenna accommodation space AK, since the size of the space is set to be unable to maintain the size of the plasma generated by the antenna 7, it functions as a plasma non-generation region.

[0053] <Antenna 7>

[0054] As Figure 1As shown, the antenna 7 has a long linear portion and bent portions that bend upward at both ends of the linear portion. The antenna 7 is configured, for example, in a cylindrical shape and is made of a metal material such as copper. In addition, one end and the other end of the antenna 7 are respectively provided in a state of being electrically insulated from the vacuum chamber 4 via the antenna insulating portions 41a and 41b, and are hermetically led out to the outside of the housing 2.

[0055] One end of the antenna 7 receives high-frequency power supplied from the high-frequency power supply 8. The other end of the antenna 7 is electrically grounded. Hereinafter, one end and the other end of the antenna 7 will be referred to as the power supply side end 7a (high-frequency power supply side end) and the ground side end 7b, respectively. A matching circuit 9 and a power supply side variable capacitor VCa (power supply side impedance adjustment unit) are connected to the power supply side end 7a of the antenna 7. A ground side variable capacitor VCb (ground side impedance adjustment unit) is connected to the ground side end 7b of the antenna 7. Hereinafter, the power supply side variable capacitor VCa and the ground side variable capacitor VCb will be collectively referred to as the variable capacitor VC. In addition, for one of the plurality of antennas 71 to 73, the power supply side variable capacitor VCa may not be connected. That is, in the present embodiment, it is sufficient that the power supply side variable capacitor VCa is connected to at least two of the three antennas 71 to 73. In addition, the variable capacitor VC is an example of an impedance adjustment unit whose impedance is variable, but is not limited thereto.

[0056] The high-frequency power supply 8 supplies high-frequency power of 13.56 MHz to the power supply side end 7a via the matching circuit 9 and the power supply side variable capacitor VCa, for example. In addition, the monitoring device 10 controls to efficiently supply high-frequency power to the antenna 7 by changing the capacitance of the ground side variable capacitor VCb.

[0057] <Optical Receiving Unit PD>

[0058] As Figure 1 shown, the optical receiving unit PD is disposed at a height position on the side surface of the housing main body 2a so as to be able to detect the light emission intensity of the plasma generation region HA. The optical receiving unit PD includes, for example, an imaging element such as a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS). The optical receiving unit PD detects the light emission intensity of the plasma generation region HA by receiving the light emission of the plasma from the plasma generation region HA via a viewport (through hole) formed on the side surface of the housing main body 2a using the imaging element.

[0059] As Figure 3As shown, the optical receiving unit PD includes a plurality of optical receiving units arranged along the left-right direction (the direction in which the plurality of antennas 71 to 73 extend respectively). In the present embodiment, the plurality of optical receiving units are two optical receiving units, namely the first optical receiving unit PD1 and the second optical receiving unit PD2. The first optical receiving unit PD1 and the second optical receiving unit PD2 are provided on the front and rear sides of the housing main body 2a. For example, the first optical receiving unit PD1 and the second optical receiving unit PD2 may also be respectively provided at positions corresponding to the left and right ends of the plurality of antennas 71 to 73 on the front and rear sides of the housing main body 2a. In this case, the first optical receiving unit PD1 and the second optical receiving unit PD2 respectively detect the light emission intensity of the plasma generation region HA including the positions corresponding to the left and right ends of the plurality of antennas 71 to 73 when viewed from above. In addition, the first optical receiving unit PD1 and the second optical receiving unit PD2 may be provided on the front and rear sides of the housing main body 2a at equal distances from the central position in the left-right direction of the plurality of antennas 71 to 73.

[0060] In addition, the optical receiving unit PD may also include a plurality of optical receiving units corresponding to the plurality of antennas and arranged along the front-rear direction (the direction in which the plurality of antennas 71 to 73 are arranged). In the present embodiment, the plurality of optical receiving units are three optical receiving units corresponding to the plurality of antennas 71 to 73 respectively, namely the third optical receiving unit PD3, the fourth optical receiving unit PD4, and the fifth optical receiving unit PD5. The third optical receiving unit PD3, the fourth optical receiving unit PD4, and the fifth optical receiving unit PD5 are provided on the left and right sides of the housing main body 2a. For example, the third optical receiving unit PD3, the fourth optical receiving unit PD4, and the fifth optical receiving unit PD5 may also be respectively provided at positions corresponding to the extension lines of the first antenna 71, the second antenna 72, and the third antenna 73 on the left and right sides of the housing main body 2a. In this case, the third optical receiving unit PD3, the fourth optical receiving unit PD4, and the fifth optical receiving unit PD5 respectively detect the light emission intensity of the plasma generation region HA including the positions along the first antenna 71, the second antenna 72, and the third antenna 73 when viewed from above.

[0061] According to the above structure, the optical receiving unit PD can detect the in-plane distribution of the plasma in the plasma generation region HA.

[0062] In particular, the light receiving unit PD includes a first light receiving unit PD1 and a second light receiving unit PD2, and can detect the distribution of plasma in the left-right direction extending respectively from multiple antennas 71 to 73 (hereinafter referred to as the plasma left-right distribution). As will be described later, the plasma left-right distribution can be controlled by adjusting the impedance of the ground-side impedance adjustment unit. That is, the light receiving unit PD can detect the plasma left-right distribution which is information for controlling the in-plane distribution of the plasma. Therefore, the plasma processing apparatus can sufficiently confirm the plasma state in the processing chamber through a simple structure such as arranging multiple light receiving units in the left-right direction.

[0063] In addition, the light receiving unit PD includes a third light receiving unit PD3, a fourth light receiving unit PD4, and a fifth light receiving unit PD5, and can detect the distribution of plasma in the front-back direction in which multiple antennas 71 to 73 are arranged (hereinafter referred to as the plasma front-back distribution). As will be described later, the plasma front-back distribution can be controlled by adjusting the impedance of the power supply-side impedance adjustment unit. That is, the light receiving unit PD can detect the plasma front-back distribution which is information for controlling the in-plane distribution of the plasma. Therefore, the plasma processing apparatus can sufficiently confirm the plasma state in the processing chamber through a simple structure such as arranging multiple light receiving units in the front-back direction.

[0064] In addition, in the present embodiment, an example in which the light receiving unit PD includes the first light receiving unit PD1 to the fifth light receiving unit PD5 is shown, and the structure of the light receiving unit PD is not limited thereto. For example, the light receiving unit PD may only include multiple light receiving units arranged in the left-right direction. In addition, the light receiving unit PD may only include multiple light receiving units arranged in the front-back direction. In addition, in the present embodiment, the number of multiple light receiving units arranged in the left-right direction is set to 2, but it is not limited thereto. In addition, in the present embodiment, the number of multiple light receiving units arranged in the front-back direction is set to 3 according to the number of antennas 7, but it is not limited thereto.

[0065] <Monitoring device 10>

[0066] Figure 4 is a block diagram showing the main part structure of the monitoring device 10. As Figure 4 shown, the monitoring device 10 includes an acquisition unit 11, a storage unit 12, and a control unit 13. The control unit 13 includes a calculation unit 131, a determination unit 132, and an adjustment control unit 133.

[0067] The acquisition unit 11 acquires spectral data (spectroscopic data) of the light received by the light receiving unit PD, which includes the emission spectrum of the plasma to be monitored. The acquisition unit 11 outputs the acquired spectral data to the calculation unit 131 of the control unit 13. The storage unit 12 stores various data used by the monitoring device 10.

[0068] The calculation unit 131 calculates the peak value or the integral value near the peak value of the wavelength spectrum in a specified wavelength band (i.e., the emission spectrum of the plasma to be monitored) as the emission intensity of the plasma based on the spectral data. Here, the emission intensities of the plasma to be monitored calculated by the calculation unit 131 based on the spectral data acquired from the first light receiving unit PD1 to the fifth light receiving unit PD5 are respectively referred to as the first emission intensity I1 to the fifth emission intensity I5 detected by the first light receiving unit PD1 to the fifth light receiving unit PD5.

[0069] When the plasma processing apparatus 1 performs the plasma processing, the emission spectrum of the plasma to be monitored becomes a wavelength spectrum corresponding to the material of the plasma processing. For example, when forming amorphous silicon on the substrate W, the calculation unit 131 calculates the peak value near the wavelength of 252 nm corresponding to silicon in the plasma state, or the integral value near the peak value.

[0070] When the plasma processing apparatus 1 performs the cleaning process, the emission spectrum of the plasma to be monitored becomes a wavelength spectrum corresponding to the gas caused by the substances attached to the processing chamber. For example, when silicon is attached to the wall surface of the processing chamber, nitrogen trifluoride is supplied to the processing chamber. The nitrogen trifluoride supplied to the processing chamber becomes a plasma state by the inductive electric field from the antenna 7, and the nitrogen trifluoride in the plasma state reacts with the silicon attached to the wall surface. As a result, a gas of silicon fluoride in the plasma state is generated as the gas caused by the substances attached to the processing chamber. The calculation unit 131 calculates the peak value near the wavelength of 441 nm corresponding to silicon fluoride in the plasma state, or the integral value near the peak value.

[0071] The determination unit 132 determines whether the in-plane distribution of the plasma is appropriate based on the first emission intensity I1 to the fifth emission intensity I5 detected by the first light receiving unit PD1 to the fifth light receiving unit PD5. When the plasma processing apparatus 1 performs the plasma processing, the determination unit 132 determines whether the in-plane distribution (generated plasma density) of the plasma is uniform. When the plasma processing apparatus 1 performs the cleaning process, the determination unit 132 determines the light receiving unit PD that detects a higher plasma emission intensity. Regarding the specific determination method performed by the determination unit 132, reference will be made to Figures 5 to 10 which will be described later.

[0072] The adjustment control unit 133 controls the capacitance of the variable capacitor VC based on the determination result of the determination unit 132. Specifically, the adjustment control unit 133 controls the capacitance of the grounded-side variable capacitor VCb (the impedance of the grounded-side impedance adjustment unit) based on the light emission intensities detected by the plurality of light receiving parts arranged in the left-right direction. In the present embodiment, the adjustment control unit 133 controls the capacitance of the grounded-side variable capacitor VCb based on the first light emission intensity I1 detected by the first light receiving part PD1 and the second light emission intensity I2 detected by the second light receiving part PD2. Here, it can be understood that by adjusting the capacitance of the grounded-side variable capacitor VCb, the distribution of the high-frequency current flowing through the antenna 7 in the longitudinal direction (left-right direction) can be controlled. Therefore, the plasma processing apparatus 1 can control at least the left-right distribution of the plasma by changing the capacitance of the grounded-side variable capacitor VCb.

[0073] In addition, the adjustment control unit 133 controls the capacitance of the power supply-side variable capacitor VCa (the impedance of the power supply-side impedance adjustment unit) based on the light emission intensities detected by the plurality of light receiving parts arranged in the front-rear direction. In the present embodiment, the adjustment control unit 133 controls the capacitance of the power supply-side variable capacitor VCa based on the third light emission intensity I3 detected by the third light receiving part PD3, the fourth light emission intensity I4 detected by the fourth light receiving part PD4, and the fifth light emission intensity I5 detected by the fifth light receiving part PD5. By adjusting at least the capacitance of the power supply-side variable capacitor VCa connected to the antennas 7 other than one antenna (that is, at least two of the three antennas 71 to 73 in the present embodiment), the high-frequency current flowing through each antenna 7 can be relatively controlled. The actual multiple antennas 7 may have individual differences. Therefore, even when there are differences in the plasma density generated when assuming the same magnitude of high-frequency current flowing through each antenna 7, the plasma processing apparatus 1 can control the front-rear distribution of the plasma by adjusting the capacitance of the power supply-side variable capacitor VCa. In addition, in the present embodiment, the case where the capacitance of the power supply-side variable capacitor VCa connected to the three antennas 71 to 73 is controlled based on the third light emission intensity I3 to the fifth light emission intensity I5 detected by the third light receiving part PD3 to the fifth light receiving part PD5 is described.

[0074] In addition, when the plasma processing apparatus 1 performs the plasma processing, the adjustment control unit 133 can also perform control in such a way as to reduce the deviation of the plasma density in the plasma generation region. Regarding the specific control method at this time, reference will be made to Figures 5 to 10 which will be described later.

[0075] In addition, when the plasma processing apparatus 1 performs the cleaning process, the adjustment control unit 133 may also perform control in such a manner that the plasma density generated in the plasma generation region corresponding to the light receiving unit PD that detects a higher plasma emission intensity becomes higher. For example, it is assumed that the emission intensity detected by a certain light receiving unit PDa among the plurality of light receiving units PD1 to PD5 is higher than the emission intensity detected by other light receiving units PDb among the plurality of light receiving units PD1 to PD5. In this case, the adjustment control unit 133 controls the variable capacitor VC in such a manner that the plasma density generated in the plasma generation region corresponding to a certain light receiving unit PDa increases, so that the plasma density is higher than the plasma density generated in the plasma generation region corresponding to other light receiving units PDb.

[0076] In addition, when the plasma processing apparatus 1 performs the cleaning process, the adjustment control unit 133 may also perform control in such a manner that the plasma density generated in the plasma generation region corresponding to the light receiving unit PD that detects a lower plasma emission intensity becomes lower. For example, it is assumed that the emission intensity detected by a certain light receiving unit PDa among the plurality of light receiving units PD1 to PD5 is lower than the emission intensity detected by other light receiving units PDb among the plurality of light receiving units PD1 to PD5. In this case, the adjustment control unit 133 controls the variable capacitor VC in such a manner that the plasma density generated in the plasma generation region corresponding to a certain light receiving unit PDa decreases, so that the plasma density is lower than the plasma density generated in the plasma generation region corresponding to other light receiving units PDb.

[0077] According to the above structure, the distribution of the generated plasma can be controlled based on the distribution of the adhesion amount in the processing chamber. Specifically, in a region where the adhesion amount in the processing chamber is large and high-intensity plasma is emitted, the plasma density can be increased. Similarly, in a region where the adhesion amount in the processing chamber is small and low-intensity plasma is emitted, the plasma density can be decreased. Therefore, the plasma processing apparatus 1 can perform the cleaning process efficiently. In addition, damage to the inner wall of the processing chamber after the cleaning is completed by the plasma can be suppressed.

[0078] In addition, among the components of the monitoring device 10 shown in Figure 4 the control unit 13 is not an essential component. The monitoring device 10 only needs to have at least a function of monitoring the plasma generated inside the housing 2 (that is, acquiring the spectral data detected by the light receiving unit PD). In this case, for example, the user can also adjust the impedance of the impedance adjustment unit based on the spectral data acquired by the monitoring device 10.

[0079] In addition, when the emission spectrum of the plasma to be monitored dominates the spectral data of the light detected by the light receiving unit PD, the acquisition unit 11 does not need to acquire the spectral data obtained by spectroscopically analyzing the light emitted from the plasma. In this case, the acquisition unit 11 acquires the emission intensity of the light detected by the light receiving unit PD as the emission intensity of the plasma.

[0080] <Example of the operation of the plasma processing apparatus 1>

[0081] Hereinafter, with reference to Figure 5 and Figure 6 a specific example of the operation of the plasma processing apparatus 1 according to the first embodiment will be described. Figure 5 FIG. schematically shows the arrangement relationship between the light receiving unit PD of the plasma processing apparatus 1 and the antenna circuit. Hereinafter, with reference to Figures 6 to 8 the various operation examples performed by the monitoring device 10 in the plasma processing apparatus 1 as shown in Figure 5 will be described. In addition, in the following description, a case where the plasma processing apparatus 1 performs the plasma processing will be described.

[0082] As Figure 5 shown, a k-th power supply side variable capacitor VCa k and a k-th ground side variable capacitor VCb k (k = 1, 2, 3) are respectively connected to the power supply side end 7a and the ground side end 7b of the k-th antenna. The first light receiving unit PD1 and the second light receiving unit PD2 are respectively provided at positions corresponding to the left and right ends of the plurality of antennas 71 to 73. The third light receiving unit PD3, the fourth light receiving unit PD4, and the fifth light receiving unit PD5 are respectively provided at positions corresponding to the extension lines of the first antenna 71, the second antenna 72, and the third antenna 73.

[0083] When starting the plasma processing, the plasma processing apparatus 1 applies a high-frequency voltage from the high-frequency power supply 8 to the antenna 7, so that a high-frequency current flows through the antenna 7. As a result, an induced electric field is generated in the processing chamber, and an inductively coupled plasma is generated. The monitoring device 10 monitors the first to fifth emission intensities I1 to I5 of the plasma respectively detected by the plurality of light receiving units PD1 to PD5. The monitoring device 10 controls the impedance (capacitance of the ground side variable capacitor VCb) of the ground side impedance adjustment unit based on the first emission intensity I1 and the second emission intensity I2. In addition, the monitoring device 10 controls the high-frequency power supplied to the first to third antennas 71 to 73 based on the third to fifth emission intensities I3 to I5. In the present embodiment, the monitoring device 10 controls the high-frequency power by controlling the impedance (capacitance of the power supply side variable capacitor VCa) of the power supply side impedance adjustment unit.

[0084] Figure 6This is a flowchart showing an example of the processing performed by the monitoring device 10. As Figure 6 shown, in S1, the determination unit 132 determines whether the following first condition is satisfied based on the detection result of the light receiving unit PD.

[0085] First condition: Max{I3 / Ave(I3, I4, I5), I4 / Ave(I3, I4, I5), I5 / Ave(I3, I4, I5)} > Max{I1 / Ave(I1, I2), I2 / Ave(I1, I2)}

[0086] When the first condition is satisfied (YES in S1), the process proceeds to S2. When the first condition is not satisfied (NO in S1), the process proceeds to S3. Here, "I3 / Ave(I3, I4, I5)" in the first condition is the value obtained by normalizing the third light emission intensity I3 using the average value of the third light emission intensity I3 to the fifth light emission intensity I5. In addition, for example, the third light emission intensity I3 can also be normalized using the reference light emission intensity stored in the storage unit 12. The same applies to other light emission intensities.

[0087] In S2 (control step), the adjustment control unit 133 controls the power supply side variable capacitor VCa so as to decrease Max(I3, I4, I5). For example, when Max(I3, I4, I5) = I3 (that is, when the third light emission intensity I3 is the largest among the third light emission intensity I3 to the fifth light emission intensity I5), the adjustment control unit 133 can adjust the capacitance of the first power supply side variable capacitor VCa1.

[0088] In S3 (control step), the adjustment control unit 133 controls the ground side variable capacitor VCb so as to decrease Max(I1, I2). For example, in the case where Max(I3, I4, I5) = I3, the adjustment control unit 133 can adjust the capacitance of the first ground side variable capacitor VCb1.

[0089] After the adjustment control unit 133 controls the variable capacitor VC, in S4, the determination unit 132 determines whether the following second condition is satisfied.

[0090] Second condition: σ 3,4,5 <5% and σ 1,2 <5%

[0091] When the second condition is satisfied (Yes in S4), the determination unit 132 confirms that the in-plane distribution of the plasma becomes uniform, and the process ends. When the second condition is not satisfied (No in S4), the process returns to S1. That is, the monitoring device 10 controls the variable capacitor VC until the second condition is satisfied. Here, σ in the second condition 3,4,5 is a value representing the deviation of the third light emission intensity I3 to the fifth light emission intensity I5, and is defined by, for example, the following formula. In addition, as a value representing the deviation of the third light emission intensity I3 to the fifth light emission intensity I5, it is not limited thereto, and for example, it may be the standard deviation of the third light emission intensity I3 to the fifth light emission intensity I5.

[0092] [Equation 1]

[0093]

[0094] Similarly, σ in the second condition 1,2 is a value representing the deviation of the first light emission intensity I1 and the second light emission intensity I2, and is defined by, for example, the following formula.

[0095] [Equation 2]

[0096]

[0097] Figure 7 is a flowchart showing another example of the process executed by the monitoring device 10. As Figure 7 shown, in S11, the deviation σ 3,4,5 of the light emission intensity calculated by the calculation unit 131 based on the detection result of the light receiving unit PD, the deviation σ 1,2 and the maximum light emission intensity I Max are stored in the storage unit 12. In addition, the maximum light emission intensity I Max is the maximum of any of Max{I3 / Ave(I3, I4, I5), I4 / Ave(I3, I4, I5), I5 / Ave(I3, I4, I5)} and Max{I1 / Ave(I1, I2), I2 / Ave(I1, I2)}.

[0098] In S12 (control step), the adjustment control unit 133 individually changes the capacitance or reactance of the six variable capacitors VCa1, VCa2, VCa3, VCb1, VCb2, VCb3 by a specified increase or decrease amount. For example, for the power supply side variable capacitor VCa, the specified increase or decrease amount is ±σ 3,4,5 / 2% of the maximum capacitance or the reactance at the maximum capacitance of the power supply side variable capacitor VCa. For example, for the ground side variable capacitor VCb, the specified increase or decrease amount is ±σ 1,2 / 2%. At this time, the adjustment control unit 133 determines the variable capacitor VC with the largest decrease in the maximum light emission intensity I Max . In addition, the specified increase / decrease range may also be a fixed value.

[0099] For example, when σ 1,2 = 10%, the specified increase / decrease range is ±σ 1,2 / 2% = ±5%. Therefore, when the capacitances of VCb1, VCb2, and VCb3 before the change are 500 pF, 600 pF, and 700 pF respectively, the adjustment control unit 133 changes the capacitance value of VCb1 to 475 pF and 525 pF, changes the capacitance value of VCb2 to 570 pF and 630 pF, and changes the capacitance value of VCb3 to 665 pF and 735 pF. Assume that when the capacitance value of VCb2 is changed (the capacitance values of other variable capacitors are kept) to 570 pF, the decrease in I Max is the largest (that is, in S12, the adjustment control unit 133 determines VCb2). In this case, in S13, the adjustment control unit 133 changes the capacitance value of VCb2 to 570 pF while keeping the capacitance values of other variable capacitors.

[0100] In S13, the adjustment control unit 133 changes the capacitance or reactance of the determined variable capacitor VC by the increase / decrease range.

[0101] In S14, after changing the capacitance or reactance of the variable capacitor VC, the deviation σ 3,4,5 of the light emission intensity and the deviation σ 1,2 are updated. That is, the calculation unit 131 calculates σ 3,4,5 and σ 1,2 based on the detection result of the light receiving unit PD after the change of the capacitance or reactance of the variable capacitor VC.

[0102] In S15, the determination unit 132 determines whether the updated σ 3,4,5 and σ 1,2 satisfy the second condition. When the second condition is satisfied (yes in S13), the process ends. When the second condition is not satisfied (no in S13), the process returns to S11. That is, the monitoring device 10 controls the variable capacitor VC until the second condition is satisfied.

[0103] Figure 8 is a flowchart showing another example of the process executed by the monitoring device 10. As Figure 8 shown, in S21, the determination unit 132 determines whether the following third condition is satisfied.

[0104] Third condition: σ 3,4,5 < 5%

[0105] When the third condition is satisfied (Yes in S21), the process proceeds to S23. When the third condition is not satisfied (No in S21), the process proceeds to S23 via S22.

[0106] In S22 (control step), similar to S2 Figure 6 above, the control unit 133 is adjusted to control the power supply side variable capacitor VCa in such a way that Max(I3, I4, I5) decreases.

[0107] After the control unit 133 controls the power supply side variable capacitor VCa, in S23, the determination unit 132 determines whether the following fourth condition is satisfied.

[0108] Fourth condition: σ 1,2 <5%

[0109] When the fourth condition is satisfied (Yes in S23), the process proceeds to S25. When the third condition is not satisfied (No in S23), the process proceeds to S25 via S24.

[0110] In S24 (control step), similar to S3 Figure 6 above, the control unit 133 is adjusted to control the ground side variable capacitor VCb in such a way that Max(I1, I2) decreases.

[0111] After the control unit 133 controls the ground side variable capacitor VCb, in S25, the determination unit 132 determines again whether the third condition is satisfied. When the third condition is satisfied (Yes in S25), the process ends. When the third condition is not satisfied (No in S25), the process returns to S21. That is, the monitoring device 10 controls the variable capacitor VC until both the third condition and the fourth condition are satisfied (i.e., until the second condition is satisfied).

[0112] As described above, the monitoring device 10 controls the variable capacitor VC until the second condition is satisfied. Thus, the monitoring device 10 can reduce the deviation of the plasma density in the processing chamber by adjusting the high-frequency currents flowing through the plurality of antennas 71 to 73 and the current distribution in the length direction of each antenna 7. That is, the in-plane distribution of the plasma in the processing chamber can be made closer to a uniform state.

[0113] In addition, the monitoring device 10 directly monitors the light emission from the plasma through the light receiving unit PD. Therefore, the monitoring device 10 can accurately monitor the plasma state in the processing chamber.

[0114] In addition, in the present embodiment, even when the number of antennas 7 is increased, it is not necessary to increase the number of light receiving units PD for detecting the left - right distribution of plasma. Therefore, in the present embodiment, an increase in the required number of light receiving units PD (detection units) due to an increase in the number of antennas can be suppressed.

[0115] 〔Embodiment 2〕

[0116] Hereinafter, another embodiment of the present invention will be described. In addition, for ease of explanation, components having the same functions as those described in the above - mentioned embodiment are denoted by the same reference numerals, and their descriptions will not be repeated.

[0117] Figure 9 FIG. is a diagram schematically showing the configuration relationship between the light receiving unit PD and the antenna circuit of the plasma processing apparatus 201 according to Embodiment 2. The plasma processing apparatus 201 according to Embodiment 2 is different from the plasma processing apparatus 1 according to Embodiment 1 in that a plurality of high - frequency power supplies (first high - frequency power supply 81, second high - frequency power supply 82, and third high - frequency power supply 83) for supplying high - frequency power to the first antenna 71, the second antenna 72, and the third antenna 73 are connected respectively. In addition, in the plasma processing apparatus 201 according to Embodiment 2, the power - supply - side variable capacitor VCa may also be absent.

[0118] In addition, the adjustment control unit 133 of Embodiment 2 controls the high - frequency power supplied by the plurality of high - frequency power supplies based on the light emission intensities detected by a plurality of light receiving units arranged along the front - rear direction. In the present embodiment, the adjustment control unit 133 controls the high - frequency power supplied by the first high - frequency power supply 81 to the third high - frequency power supply 83 based on the third light emission intensity I3 to the fifth light emission intensity I5.

[0119] Figure 10 is a flowchart showing an example of the process executed by the monitoring device 10 according to Embodiment 2. Hereinafter, with reference to Figure 10 for the case where the monitoring device 10 executes operations in the plasma processing apparatus 201 as shown in Figure 9 An example of an operation example will be described. In addition, in the following description, the case where the plasma processing apparatus 201 performs the plasma processing will be described.

[0120] As shown in Figure 10 , in S31, similar to S1 in Figure 6 , the determination unit 132 determines whether the first condition is satisfied based on the detection result of the light receiving unit PD. When the first condition is satisfied (Yes in S31), the process proceeds to S32. When the first condition is not satisfied (No in S31), the process proceeds to S33.

[0121] In S32 (control step), the control unit 133 is adjusted to control the first high-frequency power supply 81 to the third high-frequency power supply 83 in such a way that Max(I3, I4, I5) decreases. For example, when Max(I3, I4, I5) = I3, the control unit 133 is adjusted to reduce the high-frequency power supplied by the first high-frequency power supply 81.

[0122] In S33 (control step), in the same manner as S3 Figure 6 , the control unit 133 is adjusted to control the ground-side variable capacitor VCb in such a way that Max(I1, I2) decreases.

[0123] After the control unit 133 adjusts the control of the first high-frequency power supply 81 to the third high-frequency power supply 83 or the ground-side variable capacitor VCb, in S34, the determination unit 132 determines whether the second condition is satisfied. When the second condition is satisfied (Yes in S34), the process ends. When the second condition is not satisfied (No in S34), the process returns to S1. That is, the monitoring device 10 controls the first high-frequency power supply 81 to the third high-frequency power supply 83 or the ground-side variable capacitor VCb until the second condition is satisfied.

[0124] According to the above structure, the plasma processing apparatus 201 of the second embodiment exhibits the same effects as the plasma processing apparatus of the first embodiment.

[0125] 〔Software-based implementation example〕

[0126] The functions of the monitoring device 10 (hereinafter referred to as the "device") can be implemented by a program for causing a computer to function as the device, that is, a program for causing a computer to function as each control block (particularly each part included in the acquisition unit 11 and the control unit 13).

[0127] In this case, the device includes a computer having at least one control device (e.g., a processor) and at least one storage device (e.g., a memory) as hardware for executing the program. By executing the program by the control device and the storage device, the respective functions described in the above embodiments are realized.

[0128] The program may also be non-temporary and recorded on one or more computer-readable recording media. The recording medium may be included in the device or may not be included in the device. In the latter case, the program can be supplied to the device via any wired or wireless transmission medium.

[0129] In addition, part or all of the functions of each of the control blocks can also be implemented by a logic circuit. For example, an integrated circuit formed with a logic circuit that functions as each of the control blocks is also included in the scope of the present invention. In addition to this, for example, the functions of each of the control blocks can also be implemented by a quantum computer.

[0130] In addition, each process described in each of the above embodiments can also be executed by artificial intelligence (AI). In this case, the AI can operate through the control device or through other devices (for example, an edge computer or a cloud server, etc.).

[0131] (Summary)

[0132] To solve the above problems, the plasma processing apparatus according to Embodiment 1 of the present invention includes: at least one antenna that generates plasma in a vacuum chamber; and a plurality of light receiving units that detect the light emission intensity in a plasma generation region, where the plurality of light receiving units include a first light receiving unit and a second light receiving unit, and the first light receiving unit and the second light receiving unit are arranged along a first direction in which the at least one antenna extends.

[0133] The plasma processing apparatus according to Embodiment 2 of the present invention may further include, in Embodiment 1: a ground-side impedance adjustment unit connected to a ground-side end of the at least one antenna and having a variable impedance; and a control unit that controls the impedance of the ground-side impedance adjustment unit based on a first light emission intensity detected by the first light receiving unit and a second light emission intensity detected by the second light receiving unit.

[0134] The plasma processing apparatus according to Embodiment 3 of the present invention may be such that, in Embodiment 1 or 2, the at least one antenna includes a first antenna and a second antenna, the plurality of light receiving units further include a third light receiving unit and a fourth light receiving unit, the third light receiving unit and the fourth light receiving unit are arranged along a second direction in which the first antenna and the second antenna are arranged, and correspond to the first antenna and the second antenna respectively.

[0135] In the plasma processing apparatus according to Embodiment 4 of the present invention, in Embodiment 3, it may further include: a high-frequency power supply that supplies high-frequency power to the first antenna and the second antenna; a plurality of ground-side impedance adjustment units that are respectively connected to the ground-side ends of the first antenna and the second antenna and have variable impedance; a power supply-side impedance adjustment unit that is connected to the high-frequency power supply-side end of the first antenna or the second antenna and has variable impedance; and a control unit that (i) controls the impedance of the plurality of ground-side impedance adjustment units based on the first light emission intensity detected by the first light receiving unit and the second light emission intensity detected by the second light receiving unit, and (ii) controls the impedance of the power supply-side impedance adjustment unit based on the third light emission intensity detected by the third light receiving unit and the fourth light emission intensity detected by the fourth light receiving unit.

[0136] In the plasma processing apparatus according to Embodiment 5 of the present invention, in Embodiment 3, the plasma processing apparatus may further include: a first high-frequency power supply and a second high-frequency power supply that respectively supply high-frequency power to the first antenna and the second antenna; a plurality of ground-side impedance adjustment units that are respectively connected to the ground-side ends of the first antenna and the second antenna and have variable impedance; and a control unit that (i) controls the impedance of the plurality of ground-side impedance adjustment units based on the first light emission intensity detected by the first light receiving unit and the second light emission intensity detected by the second light receiving unit, and (ii) controls the high-frequency power supplied by the first high-frequency power supply or the second high-frequency power supply based on the third light emission intensity detected by the third light receiving unit and the fourth light emission intensity detected by the fourth light receiving unit.

[0137] In the plasma processing apparatus according to Embodiment 6 of the present invention, in any one of Embodiments 2, 4, and 5, the plurality of light receiving units may detect the light emission intensity of the gas caused by the substance attached to the vacuum chamber as the light emission intensity of the plasma generation region. When the light emission intensity detected by a certain light receiving unit among the plurality of light receiving units is higher than the light emission intensity detected by other light receiving units among the plurality of light receiving units, the control unit controls such that the plasma density generated in the plasma generation region corresponding to the certain light receiving unit is higher than the plasma density generated in the plasma generation region corresponding to the other light receiving units.

[0138] To solve the above problems, the plasma processing apparatus according to Embodiment 7 of the present invention includes: a first antenna and a second antenna that generate plasma in a vacuum chamber; and a plurality of light receiving units that detect the light emission intensity of the plasma generation region. The plurality of light receiving units include a third light receiving unit and a fourth light receiving unit. The third light receiving unit and the fourth light receiving unit are arranged along a second direction in which the first antenna and the second antenna are arranged and respectively correspond to the first antenna and the second antenna.

[0139] To solve the above problems, a control method for a plasma processing apparatus according to Embodiment 8 of the present invention is a method for controlling a plasma processing apparatus, the plasma processing apparatus including: at least one antenna that generates plasma in a vacuum chamber; a plurality of light receiving units that detect the light emission intensity of a plasma generation region; and a ground-side impedance adjustment unit that is connected to the ground-side end of the antenna and has a variable impedance. The plurality of light receiving units include a first light receiving unit and a second light receiving unit. The first light receiving unit and the second light receiving unit are arranged along a first direction in which the antenna extends. The control method for the plasma processing apparatus includes: a first detection step of detecting a first light emission intensity of a plasma generation region corresponding to the first light receiving unit by the first light receiving unit; a second detection step of detecting a second light emission intensity of a plasma generation region corresponding to the second light receiving unit by the second light receiving unit; and a control step of controlling the impedance of the ground-side impedance adjustment unit based on the first light emission intensity and the second light emission intensity.

[0140] To solve the above problems, a control method for a plasma processing apparatus according to Embodiment 9 of the present invention is a method for controlling a plasma processing apparatus, the plasma processing apparatus including: a first antenna and a second antenna that generate plasma in a vacuum chamber; and a plurality of light receiving units that detect the light emission intensity of a plasma generation region. The plurality of light receiving units include a third light receiving unit and a fourth light receiving unit. The third light receiving unit and the fourth light receiving unit are arranged along a second direction in which the first antenna and the second antenna are arranged and correspond to the first antenna and the second antenna, respectively. The control method for the plasma processing apparatus includes: a third detection step of detecting a third light emission intensity of a plasma generation region corresponding to the third light receiving unit by the third light receiving unit; a fourth detection step of detecting a fourth light emission intensity of a plasma generation region corresponding to the fourth light receiving unit by the fourth light receiving unit; and a control step of controlling the high-frequency power supplied to the first antenna and the second antenna, respectively, based on the third light emission intensity and the fourth light emission intensity.

[0141] The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope shown in the claims. Embodiments obtained by appropriately combining technical means disclosed in different embodiments are also included in the technical scope of the present invention.

[0142] Explanation of Reference Numerals

[0143] 1, 201: Plasma processing apparatus

[0144] 7: Antenna

[0145] 7a: Power supply side end (high-frequency power supply side end)

[0146] 7b: Ground side end

[0147] 8: High-frequency power supply

[0148] 10: Monitoring device

[0149] 13: Control unit

[0150] 71: First antenna

[0151] 72: Second antenna

[0152] 81: First high-frequency power supply

[0153] 82: Second high-frequency power supply

[0154] PD: Optical receiver

[0155] PD1: First optical receiver

[0156] PD2: Second optical receiver

[0157] PD3: Third optical receiver

[0158] PD4: Fourth optical receiver

[0159] VCa: Power supply side variable capacitor (power supply side impedance adjustment unit)

[0160] VCb: Ground side variable capacitor (ground side impedance adjustment unit)

Claims

1. A plasma processing apparatus, comprising: At least one antenna for generating plasma in a vacuum chamber; and a plurality of light receiving units for detecting the light emission intensity in a plasma generation region, wherein the plurality of light receiving units include a first light receiving unit and a second light receiving unit, and the first light receiving unit and the second light receiving unit are arranged along a first direction in which the at least one antenna extends.

2. The plasma processing apparatus according to claim 1 further comprises: A ground side impedance adjustment unit connected to a ground side end of the at least one antenna and having a variable impedance; and a control unit for controlling the impedance of the ground side impedance adjustment unit based on a first light emission intensity detected by the first light receiving unit and a second light emission intensity detected by the second light receiving unit.

3. The plasma processing apparatus according to claim 1, wherein, The at least one antenna includes a first antenna and a second antenna, and the plurality of light receiving units further include a third light receiving unit and a fourth light receiving unit, and the third light receiving unit and the fourth light receiving unit are arranged along a second direction in which the first antenna and the second antenna are arranged and correspond to the first antenna and the second antenna respectively.

4. The plasma processing apparatus according to claim 3, further comprising: a high-frequency power supply for supplying high-frequency power to the first antenna and the second antenna; a plurality of ground side impedance adjustment units respectively connected to ground side ends of the first antenna and the second antenna and having variable impedances; a power supply side impedance adjustment unit connected to a high-frequency power supply side end of the first antenna or the second antenna and having a variable impedance; and a control unit for (i) controlling the impedances of the plurality of ground side impedance adjustment units based on a first light emission intensity detected by the first light receiving unit and a second light emission intensity detected by the second light receiving unit, and (ii) controlling the impedance of the power supply side impedance adjustment unit based on a third light emission intensity detected by the third light receiving unit and a fourth light emission intensity detected by the fourth light receiving unit.

5. The plasma processing apparatus according to claim 3, further comprising: a first high-frequency power supply and a second high-frequency power supply for respectively supplying high-frequency power to the first antenna and the second antenna; a plurality of ground side impedance adjustment units respectively connected to ground side ends of the first antenna and the second antenna and having variable impedances; and a control unit for (i) controlling the impedances of the plurality of ground side impedance adjustment units based on a first light emission intensity detected by the first light receiving unit and a second light emission intensity detected by the second light receiving unit, and (ii) controlling the high-frequency power supplied by the first high-frequency power supply or the second high-frequency power supply based on a third light emission intensity detected by the third light receiving unit and a fourth light emission intensity detected by the fourth light receiving unit.

6. The plasma processing apparatus according to any one of claims 2, 4, and 5, wherein, The plurality of light receiving units detect the light emission intensity of a gas caused by substances adhering to the vacuum chamber as the light emission intensity in the plasma generation region. When the light emission intensity detected by a certain light receiving part among the plurality of light receiving parts is higher than the light emission intensity detected by the other light receiving parts among the plurality of light receiving parts, the control part controls so that the plasma density generated in the plasma generation region corresponding to the certain light receiving part is higher than the plasma density generated in the plasma generation region corresponding to the other light receiving parts.

7. A plasma processing apparatus, comprising: a first antenna and a second antenna that generate plasma in a vacuum chamber; and a plurality of light receiving parts that detect the light emission intensity of a plasma generation region, wherein the plurality of light receiving parts include a third light receiving part and a fourth light receiving part, the third light receiving part and the fourth light receiving part are arranged along a second direction in which the first antenna and the second antenna are arranged, and respectively correspond to the first antenna and the second antenna.

8. A control method for a plasma processing apparatus, the plasma processing apparatus comprising: at least one antenna that generates plasma in a vacuum chamber; a plurality of light receiving parts that detect the light emission intensity of a plasma generation region; and a ground side impedance adjustment part that is connected to a ground side end of the antenna and has a variable impedance, wherein the plurality of light receiving parts include a first light receiving part and a second light receiving part, the first light receiving part and the second light receiving part are arranged along a first direction in which the antenna extends, and the control method for the plasma processing apparatus includes: a first detection step of detecting a first light emission intensity of a plasma generation region corresponding to the first light receiving part through the first light receiving part; a second detection step of detecting a second light emission intensity of a plasma generation region corresponding to the second light receiving part through the second light receiving part; and a control step of controlling the impedance of the ground side impedance adjustment part based on the first light emission intensity and the second light emission intensity.

9. A control method for a plasma processing apparatus, the plasma processing apparatus comprising: a first antenna and a second antenna that generate plasma in a vacuum chamber; and a plurality of light receiving parts that detect the light emission intensity of a plasma generation region, wherein the plurality of light receiving parts include a third light receiving part and a fourth light receiving part, the third light receiving part and the fourth light receiving part are arranged along a second direction in which the first antenna and the second antenna are arranged, and respectively correspond to the first antenna and the second antenna, and the control method for the plasma processing apparatus includes: a third detection step of detecting a third light emission intensity of a plasma generation region corresponding to the third light receiving part through the third light receiving part; a fourth detection step of detecting a fourth light emission intensity of a plasma generation region corresponding to the fourth light receiving part through the fourth light receiving part; and a control step of controlling the high-frequency power supplied to the first antenna and the second antenna respectively based on the third light emission intensity and the fourth light emission intensity.

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