Luminescent material composition, ink, luminescent device and display device

Abstract

The invention discloses a luminescent material composition, ink, a luminescent device and a display device. The luminescent material composition comprises a host material and a polarity adjusting material, and the absolute value of the ratio of the zero field hole mobility to the zero field electron mobility of the host material is not equal to 1. The luminescent material composition provided by the invention can meet the requirements of products with high comprehensive performance.

Description

Technical Field

[0001] The present application relates to the technical field of luminescent materials, and particularly to a luminescent material composition, an ink, a light-emitting device, and a display device. Background Art

[0002] Organic Light Emitting Diodes (OLEDs) have advantages such as a wide color gamut, high color saturation and contrast, and active light emission. They are favored and widely used in display fields and lighting fields of different sizes. In future display and lighting technologies, organic light-emitting devices will become the mainstream with their absolute advantages.

[0003] A typical OLED device has a sandwich structure. Specifically, a stacked structure composed of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer is sandwiched between a positive electrode and a negative electrode. When a certain voltage is applied to the two electrodes of the OLED, positively charged carriers (holes) are injected from the anode and the hole injection layer into the light-emitting layer through the hole transport layer, and negatively charged carriers (electrons) are injected from the cathode and the electron injection layer into the light-emitting layer through the electron transport layer. The electrons and holes meet and recombine in the light-emitting layer to generate excitons, and the energy transition of the excitons generates photons, thereby emitting light of a certain wavelength.

[0004] Based on the non-contact Ink-jet Printing (IJP) technology, it is a patterning film-forming technology under normal pressure atmosphere without a high-precision mask. Due to its simple processing steps, low material loss, lower manufacturing cost, simpler structure, and more convenient patterning process, the IJP technology is extremely attractive for realizing light, thin, flexible, large-area, and low-cost flexible display devices.

[0005] However, currently, in the face of the product requirements of high comprehensive performance, there is still a large room for development for IJP OLEDs based on existing luminescent material compositions. Summary of the Invention

[0006] In view of this, the present application provides a luminescent material composition, an ink, a light-emitting device, and a display device.

[0007] The embodiments of the present application are implemented as follows:

[0008] In a first aspect, the present application provides a luminescent material composition, including a host material and a polarity adjustment material, wherein the absolute value of the ratio of the zero-field hole mobility to the zero-field electron mobility of the host material is not equal to 1.

[0009] In a second aspect, the present application further provides an ink, including a solvent and the above-mentioned luminescent material composition.

[0010] In a third aspect, the present application also provides a light-emitting device, including a light-emitting unit, and the material of the light-emitting unit includes the above-mentioned light-emitting material composition.

[0011] In a fourth aspect, the present application also provides a display device, including the above-mentioned light-emitting device.

[0012] The light-emitting material composition described in the present application includes the host material and the polarity regulating material, and can be applicable to the product requirements of high comprehensive performance. Description of the Drawings

[0013] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained according to these drawings.

[0014] Figure 1 It is a schematic structural diagram of a light-emitting device provided by an embodiment of the present application;

[0015] Figure 2 It is a schematic structural diagram of another light-emitting device provided by an embodiment of the present application.

[0016] Reference Signs:

[0017] Anode 10; Light-emitting layer 20; Cathode 30; Hole transport layer 40; Hole injection layer 50; Electron transport layer 60; Electron injection layer 70. Detailed Embodiments

[0018] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0019] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which this invention belongs. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0020] In this application, unless otherwise specified, the orientation terms such as "upper" and "lower" generally refer to the upper and lower directions in the actual use or working state of the device, specifically the drawing directions in the attached drawings; while "inner" and "outer" refer to the outline of the device. Additionally, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish an order.

[0021] In this application, "and / or" describes the association relationship of associated objects and indicates that three relationships can exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Here, A and B can be singular or plural.

[0022] In this application, "at least one" means one or more, and "multiple" means two or more. "One or more kinds", "at least one of the following (items)" or similar expressions refer to any combination of these items, including any combination of single items (pieces) or plural items (pieces). For example, "at least one of a, b, or c", or, "at least one of a, b, and c" can both represent: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0023] In this application, when forming another layer "on" a certain layer, the so-called "on" is a broad concept, which can mean that the formed another layer is adjacent to a certain layer, or there can be other spacer structure layers between another layer and a certain layer. For example, when forming a second electrode "on" the first carrier functional layer, the so-called "on" can mean that the formed second electrode is adjacent to the first carrier functional layer, or there can be other spacer structure layers between the second electrode and the first carrier functional layer, such as a light-emitting layer.

[0024] The various embodiments of this application can exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity and should not be construed as a rigid limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and individual values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and individual numbers within the range, such as 1, 2, 3, 4, 5, and 6, and this applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0025] In this invention, "substituted" means that a hydrogen atom in the substituent is replaced by a substituent.

[0026] In the present application, when the bonding site of a group is not specified, it means that any optional bonding site in the group can be used as the bonding site.

[0027] In the present invention, when the same substituent appears multiple times, it can be independently selected from different groups. For example, if the general formula contains multiple R1s, then each R1 can be independently selected from different groups.

[0028] In the present invention, "substituted or unsubstituted" means that the defined group can be substituted or unsubstituted. When the defined group is substituted, it should be understood that the defined group can be substituted by one or more substituents R, where R is selected from, but not limited to: deuterium atom, cyano group, isocyano group, nitro group or halogen, C1-30 alkyl group, heterocyclic group containing 3-20 ring atoms, aromatic group containing 6-20 ring atoms, heteroaromatic group containing 5-20 ring atoms, -NR’R”, silyl group, carbonyl group, alkoxycarbonyl group, aryloxycarbonyl group, carbamoyl group, halocarbonyl group, formyl group, isocyanate group, thiocyanate group, isothiocyanate group, hydroxyl group, trifluoromethyl group, and the above groups can also be further substituted by substituents acceptable in the art; it is understandable that R’ and R” in -NR’R” are each independently selected from, but not limited to: H, deuterium atom, cyano group, isocyano group, nitro group or halogen, C1-10 alkyl group, heterocyclic group containing 3-20 ring atoms, aromatic group containing 6-20 ring atoms, heteroaromatic group containing 5-20 ring atoms.

[0029] In the present invention, "number of ring atoms" refers to the number of atoms that form a ring structure by bonding atoms (for example, monocyclic compounds, fused-ring compounds, crosslinked compounds, carbocyclic compounds, heterocyclic compounds). When the ring is substituted by substituents, the atoms contained in the substituents are not included in the ring-forming atoms. The same applies to the "number of ring atoms" described below without special instructions. For example, the number of ring atoms in a benzene ring is 6, the number of ring atoms in a naphthalene ring is 10, and the number of ring atoms in a thiophenyl group is 5.

[0030] "Aryl or aromatic group" refers to an aromatic hydrocarbon group derived by removing one hydrogen atom from an aromatic ring compound, which can be a monocyclic aryl group, a fused-ring aryl group, or a polycyclic aryl group. For polycyclic ring species, at least one is an aromatic ring system. For example, "substituted or unsubstituted aryl group having 6 to 40 ring atoms" refers to an aryl group containing 6 to 40 ring atoms, preferably a substituted or unsubstituted aryl group having 6 to 30 ring atoms, more preferably a substituted or unsubstituted aryl group having 6 to 18 ring atoms, particularly preferably a substituted or unsubstituted aryl group having 6 to 14 ring atoms, and the aryl group is optionally further substituted; suitable examples include but are not limited to: phenyl, biphenyl, terphenyl, naphthyl, anthracenyl, phenanthryl, fluoranthenyl, triphenylenyl, pyrenyl, perylenyl, tetracenyl, fluorenyl, binaphthylenyl, acenaphthylenyl, and their derivatives. It can be understood that multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically such as acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, diaryl ether systems should also be included in the definition of aryl groups.

[0031] "Heteroaryl or heteroaromatic group" refers to a group in which at least one carbon atom in an aryl group is replaced by a non-carbon atom, and the non-carbon atom can be an N atom, an O atom, an S atom, etc. For example, "substituted or unsubstituted heteroaryl group having 5 to 40 ring atoms" refers to a heteroaryl group having 5 to 40 ring atoms, preferably a substituted or unsubstituted heteroaryl group having 6 to 30 ring atoms, more preferably a substituted or unsubstituted heteroaryl group having 6 to 18 ring atoms, particularly preferably a substituted or unsubstituted heteroaryl group having 6 to 14 ring atoms, and the heteroaryl group is optionally further substituted. Suitable examples include but are not limited to: thienyl, furyl, pyrrolyl, imidazolyl, triazolyl, imidazolyl, dioxazolyl, triazolyl, pyridyl, bipyridyl, pyrimidinyl, triazinyl, triazolyl, acridinyl, pyridazinyl, pyrazinyl, quinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridopyrimidinyl, pyridopyrazinyl, pyrazinopyrazinyl, isoquinolinyl, indolyl, carbazolyl, benzothienyl, benzofuryl, indolyl, carbazolyl, pyrrolopyrimidinyl, pyrrolopyrrolyl, thiophenopyrrolyl, thiophenothiophenyl, furanopyrrolyl, furanofuryl, thiophenofuryl, benzisoxazolyl, benzisothiazolyl, benzimidazolyl, quinolinyl, isoquinolinyl, phthalazinyl, quinoxalinyl, phenanthridinyl, peridinyl, quinazolinyl, quinazolinone, dibenzothiophenyl, dibenzofuryl, carbazolyl, and their derivatives.

[0032] In the present invention, "alkyl" may represent straight-chain or branched-chain alkyl. The number of carbon atoms in the alkyl may be 1 to 50, 1 to 30, 1 to 20, 1 to 10, or 1 to 6. Phrases containing this term, for example, "C1-9 alkyl" refers to an alkyl containing 1 to 9 carbon atoms, and each occurrence may independently be a C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, or C9 alkyl. Non-limiting examples of alkyl include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyl octyl, 2-hexyloctyl, 3,7-dimethyloctyl, n-nonyl, n-decyl, adamantyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl, n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, 2-ethylhexadecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, n-eicosyl, 2-ethyleicosyl, 2-butyleicosyl, 2-hexyleicosyl, 2-octyleicosyl, n-heneicosyl, n-docosyl, n-tricosyl, n-tetracosyl, n-pentacosyl, n-hexacosyl, n-heptacosyl, n-octacosyl, n-nonacosyl, n-triacontyl, adamantane, etc.

[0033] In the present application, "alkoxy" refers to a group having the structure "-O-alkyl", that is, the alkyl as defined above is connected to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to: methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), and tert-butoxy (-O-C(CH3)3 or -OtBu).

[0034] Current OLEDs are mainly prepared based on vacuum evaporation technology, which requires high-cost and high-energy-consuming equipment such as high-vacuum evaporation machines and high-cost consumables such as high-precision metal masks. There are still challenges in the low-cost, large-area, and energy-saving manufacturing of medium and large-sized display panels. The non-contact ink-jet printing technology (IJP) is a pattern-forming film technology under atmospheric pressure without a mask. Due to its simple processing steps, low material loss, lower manufacturing cost, simpler structure, and more convenient patterning process, the ink-jet printing technology is extremely attractive for realizing lightweight, thin, flexible, large-area, and low-cost flexible display devices. At present, in the face of the product requirements of high efficiency and long life, there is still a certain room for development for IJP OLED (printed OLED).

[0035] In an actual display panel, the materials of the hole functional layer and the electron functional layer remain fixed in terms of material and ratio according to the final panel performance requirements and mass production process technology, and only the thickness is adjusted. However, in fact, the charge balance required for each functional color R / G / B is different. Therefore, for actual display requirements, there will be certain trade-offs. Since the lifetime of the blue unit in the current IJP OLED panel is relatively the lowest, it is necessary to prevent color shift of the panel caused by the decay of the blue unit lifetime. Therefore, the current charge balance scheme is more inclined to ensure the device performance of the blue unit. Among the R / G / B three light-emitting units, the main material of green phosphorescence is currently a mixture of p-type material and n-type material, so the charge balance can be adjusted by changing the ratio of the main materials. The red phosphorescent material is a single main material. Under the unified evaporation structure, it is still difficult to adjust the charge balance, and the charge balance limits the comprehensive performance of the current red phosphorescent devices.

[0036] In solution-processed devices, the exciton recombination region is generally dispersed throughout the light-emitting layer. However, the recombination region is affected by the electron-hole balance. The device structure of solution processing is simplified compared with the evaporation method, eliminating the hole blocking layer and the electron blocking layer. At the same time, since a large number of exciton recombinations are close to the HT / EM interface, there is also a possibility of quenching, which may cause serious TTA (triplet-triplet annihilation upconversion) and TPQ (triplet-polaron annihilation). Serious TTA and TPQ will greatly reduce the performance and lifetime of the device, thus reducing the device performance in many aspects.

[0037] The technical solution of this application is as follows:

[0038] In a first aspect, an embodiment of this application provides a luminescent material composition, including a host material and a polarity regulating material, wherein the absolute value of the ratio of the zero-field hole mobility to the zero-field electron mobility of the host material is not equal to 1.

[0039] In some embodiments, the polarity regulating material includes an electron donor material and / or an electron acceptor material.

[0040] In some embodiments, the host material is a bipolar host material.

[0041] It should be noted that a bipolar host material refers to a host material that has both hole-transporting polarity and electron-transporting polarity. In other words, the bipolar host material refers to a host material that can accept both electrons and holes.

[0042] In some embodiments, the bipolar host material is a red host material (RH), i.e., a material that can interact with a red light-emitting dopant material to emit red light during the light-emitting process.

[0043] In some embodiments, the luminescent material composition further includes a dopant material, and the dopant material is a red dopant material (RD).

[0044] In some embodiments, the luminescent peak wavelength of the dopant material is 580 - 650 nm.

[0045] In the luminescent material composition, the content of the host material is 79.2 - 84.915 wt%, and the content of the dopant material is 1 - 15 wt%. As an example, the content of the host material can be 79.2 wt%, 80 wt%, 81 wt%, 82 wt%, 83 wt%, 84 wt%, 84.9 wt%, etc. As an example, the content of the dopant material can be 1 wt%, 3 wt%, 5 wt%, 6 wt%, 8 wt%, 10 wt%, 12 wt%, 13 wt%, 15 wt%, etc.

[0046] In the first embodiment of the present application, the host material includes a first host material, and the absolute value of the ratio of the zero-field hole mobility to the zero-field electron mobility of the first host material is less than 1, that is, the first host material is a bipolar N-type material. The luminescent material composition further includes a first polarity adjusting material, and the first polarity adjusting material includes a first electron donor material, or the first polarity adjusting material includes a mixed material of a first electron donor material and a first electron acceptor material.

[0047] It should be noted that in the present application, the zero-field hole mobility refers to the migration speed of holes in the material without an applied electric field. Correspondingly, the zero-field hole mobility of the first host material refers to the migration speed of holes in the first host material without an applied electric field.

[0048] It should be noted that in this application, the zero-field electron mobility refers to the migration speed of electrons in a material without an externally applied electric field. Correspondingly, the zero-field electron mobility of the first host material refers to the migration speed of electrons in the first host material without an externally applied electric field.

[0049] It should be noted that in this application, the bipolar N-type biased material refers to a host material that can both accept electrons and accept holes and has a higher ability to accept electrons than to accept holes.

[0050] In the luminescent material composition, the content of the first polarity regulating material is 0.085 to 19.8 wt%, for example, 0.1 wt%, 1 wt%, 2 wt%, 3 wt%, 5 wt%, 8 wt%, 10 wt%, 12 wt%, 13 wt%, 15 wt%, 16 wt%, 18 wt%, 19 wt%, etc.

[0051] When the first polarity regulating material includes a mixed material of a first electron donor material and a first electron acceptor material, the content of the first electron donor material in the first polarity regulating material is 80 to 95 wt%, for example, 80 wt%, 82 wt%, 83 wt%, 85 wt%, 88 wt%, 90 wt%, etc.; the content of the first electron acceptor material is 5 to 20 wt%, for example, 5 wt%, 8 wt%, 10 wt%, 13 wt%, 15 wt%, 18 wt%, 20 wt%, etc. Within the content range, the polarity of the luminescent material combination can be effectively adjusted to make the polarity of the luminescent material combination closer to or neutral. In addition, within the range, the efficiency of the first polarity regulating material to generate exciplexes can be very low, ensuring that the first polarity regulating material added at this time mainly regulates the carrier balance.

[0052] It can be understood that when the host material of the light-emitting layer of the light-emitting device is a bipolar N-type biased material, most of the exciton recombination regions are close to the hole functional layer side, resulting in a too narrow recombination region, phenomena such as triplet-triplet annihilation (TPQ) and interfacial quenching, and thus reducing the performance of the device such as efficiency and lifespan. However, in this application, by adding the first polarity regulating material to the luminescent material composition, the electron-hole injection balance of the device can be effectively adjusted, making the exciton recombination region far away from the HT / EM interface, promoting the charge balance of the device, avoiding the occurrence of phenomena such as a too narrow recombination region, triplet-triplet annihilation (TPQ) and interfacial quenching, and thus improving the performance of the device such as efficiency and lifespan.

[0053] In the second embodiment of the present application, the host material is a second host material, and the absolute value of the ratio of the zero-field hole mobility to the zero-field electron mobility of the second host material is greater than 1, that is, the second host material is a bipolar P-type biased material. The luminescent material composition further includes a second polarity regulating material, and the second polarity regulating material includes a second electron acceptor material, or the second polarity regulating material includes a mixed material of a second electron donor material and a second electron acceptor material.

[0054] It should be noted that in the present application, a bipolar P-type biased material refers to a host material that can accept both electrons and holes and has a higher ability to accept holes than to accept electrons.

[0055] In the luminescent material composition, the content of the second polarity regulating material is 0.085-19.8 wt%, for example, 0.1 wt%, 1 wt%, 2 wt%, 3 wt%, 5 wt%, 8 wt%, 10 wt%, 12 wt%, 13 wt%, 15 wt%, 16 wt%, 18 wt%, 19 wt%, etc.

[0056] When the second polarity regulating material includes a mixed material of a second electron donor material and a second electron acceptor material, in the second polarity regulating material, the content of the second electron donor material is 5-20 wt%, for example, 5 wt%, 8 wt%, 10 wt%, 13 wt%, 15 wt%, 18 wt%, 20 wt%, etc.; the content of the second electron acceptor material is 80-95 wt%, for example, 80 wt%, 82 wt%, 83 wt%, 85 wt%, 88 wt%, 90 wt%, etc. Within the content range, the polarity of the luminescent material combination can be effectively adjusted to make the polarity of the luminescent material combination closer to or neutral. In addition, when the second polarity regulating material is a green host material and includes both a second electron donor material and a second electron acceptor material at the same time, within the range, the efficiency of the second polarity regulating material to generate exciplexes can be very low, ensuring that the added second polarity regulating material mainly regulates the carrier balance at this time.

[0057] It can be understood that when the host material of the light-emitting layer of the light-emitting device is a bipolar P-type biased material, most of the exciton recombination regions are close to the electron functional layer side, resulting in a too narrow recombination region, phenomena such as triplet-triplet annihilation (TPQ) and interface quenching, thereby reducing the performance of the device such as efficiency and lifespan. However, in the present application, by adding the second polarity regulating material to the luminescent material composition, the electron-hole injection balance of the device can be effectively adjusted, so that the exciton recombination region is far from the ET / EM interface, promoting the charge balance of the device, avoiding the occurrence of phenomena such as a too narrow recombination region, triplet-triplet annihilation (TPQ) and interface quenching, and thereby improving the performance of the device such as efficiency and lifespan.

[0058] In the above two embodiments:

[0059] The highest occupied molecular orbital (HOMO) energy of the host material is E HOMO (RH), and the lowest unoccupied molecular orbital (LUMO) energy is E LUMO (RH).

[0060] The above first electron donor material and second electron donor material are collectively referred to as electron donor material (EDM). The highest occupied molecular orbital (HOMO) energy of EDM is E HOMO (D), and the lowest unoccupied molecular orbital (LUMO) energy is E LUMO (D).

[0061] The above first electron acceptor material and second electron acceptor material are collectively referred to as electron acceptor material (EAM). The highest occupied molecular orbital (HOMO) energy of EAM is E HOMO (A), and the lowest unoccupied molecular orbital (LUMO) energy is E LUMO (A).

[0062] In some embodiments, ∣E LUMO (D) - E LUMO (A)∣≥0.25 eV, ∣E HOMO (D) - E HOMO (A)∣≥0.25 eV. In other words, the absolute value of the difference between the LUMO energy levels of the electron donor material and the LUMO energy levels of the electron acceptor material is greater than or equal to 0.25 eV, and the absolute value of the difference between the HOMO energy levels of the electron donor material and the HOMO energy levels of the electron acceptor material is greater than or equal to 0.25 eV. In this way, it can ensure that a sufficient amount of exciplexes can be efficiently generated.

[0063] For the first embodiment described above, the absolute value of the difference between the LUMO energy level of the first electron donor material and the LUMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV, and the absolute value of the difference between the HOMO energy level of the first electron donor material and the HOMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV.

[0064] For the second embodiment described above, the absolute value of the difference between the LUMO energy level of the second electron donor material and the LUMO energy level of the second electron acceptor material is greater than or equal to 0.25 eV, and the absolute value of the difference between the HOMO energy level of the second electron donor material and the HOMO energy level of the second electron acceptor material is greater than or equal to 0.25 eV.

[0065] In some embodiments, ∣E HOMO (D) - E HOMO (RH)∣≤0.3 eV, ∣ELUMO (A)-E LUMO (RH)∣≤0.3eV. In this way, it can be ensured that there is no potential barrier hindrance to carrier injection.

[0066] For the first embodiment described above, the absolute value of the difference between the HOMO energy level of the first electron donor material and the HOMO energy level of the host material is less than or equal to 0.3 eV, and the absolute value of the difference between the LUMO energy level of the first electron acceptor material and the LUMO energy level of the host material is less than or equal to 0.3 eV.

[0067] For the second embodiment described above, the absolute value of the difference between the HOMO energy level of the second electron donor material and the HOMO energy level of the host material is less than or equal to 0.3 eV, and the absolute value of the difference between the LUMO energy level of the second electron acceptor material and the LUMO energy level of the host material is less than or equal to 0.3 eV.

[0068] In some embodiments, the triplet energy (T1D) of the EDM, the triplet energy (T1A) of the EAM, and the triplet energy (T1RH) of the RH are all required to be greater than the triplet energy (T1ph) of the guest material, that is, T1D>T1ph, T1A>T1ph, T1RH>T1ph. In this way, it can prevent the exciton of the guest material from transferring energy to the host triplet state and quenching.

[0069] For the first embodiment described above, the triplet energy of the first electron donor material, the triplet energy of the first electron acceptor material, and the triplet energy of the first host material are all greater than the triplet energy of the guest material.

[0070] For the second embodiment described above, the triplet energy of the second electron donor material, the triplet energy of the second electron acceptor material, and the triplet energy of the second host material are all greater than the triplet energy of the guest material.

[0071] The first electron donor material and the second electron donor material are each independently a structure represented by formula (I):

[0072]

[0073] Among them,

[0074] Ar1 is selected from a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, or a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms;

[0075] K is a hole transport unit;

[0076] m1 is selected from any integer from 1 to 6.

[0077] In some embodiments, K is selected from one or more of the following structures:

[0078]

[0079] Among them, Ar 11 is selected from a substituted or unsubstituted aromatic group having 6 to 40 carbon atoms, or a substituted or unsubstituted heteroaromatic group having 3 to 40 carbon atoms;

[0080] Y1 and Y2 are each independently selected from a single bond, N(R3), C(R3R4), Si(R3R4), O, S, C═N(R3), C═C(R3R4), or P(R3); wherein, R1, R2, R3, and R4 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

[0081] In at least some embodiments, the Ar1 and K are each independently selected from one or more of the following structures:

[0082]

[0083] Among them,

[0084] Y1 and Y2 are selected from a single bond, N(R3), C(R3R4), Si(R3R4), O, S, C═N(R3), C═C(R3R4), or P(R3);

[0085] R1, R3, and R4 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

[0086] It should be noted that any connectable site in the above groups can be used as a connection site.

[0087] As an example, in some embodiments, the first electron donor material and the second electron donor material include at least one of the compounds represented by the following structural formulas:

[0088]

[0089]

[0090] The first electron acceptor material and the second electron acceptor material are each independently a structure represented by formula (II):

[0091]

[0092] Wherein, Ar2 is selected from a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, or a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms;

[0093] A is an electron transport unit;

[0094] m2 is selected from integers from 1 to 6.

[0095] In some embodiments, the electron transport unit A in the general formula (II) is selected from one or more of F, cyano, or the following groups:

[0096]

[0097] Wherein,

[0098] a is 1, 2, or 3;

[0099] X 1 to X 8 are each independently selected from CR7 or N, and at least one of them is N;

[0100] M 1 、M 2 、M 3 each independently represents N(R7), C(R7R8), Si(R7R8), O, C═N(R7), C═C(R7R8), P(R7),

[0101] P(═O)R7, S, S═O, SO2, or none;

[0102] R5, R6, R7, and R8 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

[0103] It should be noted that "none" means that there is no such group, and the benzene rings are not connected.

[0104] In at least some embodiments, the electron transport unit A is selected from

[0105] It should be noted that any connectable site in the above groups can be used as a connection site.

[0106] As an example, in some embodiments, each of the first electron acceptor material and the second electron acceptor material independently includes at least one of the compounds represented by the following structural formulas:

[0107]

[0108]

[0109] One or more of the following groups are included in the host material:

[0110]

[0111] Wherein:

[0112] Each occurrence of v and n is independently an integer from 1 to 10;

[0113] Each occurrence of X1 is independently selected from C and N, and at least one ring having X1 is N;

[0114] Y is selected from a single bond, N(R9), C(R9R 10 ), Si(R9R 10 ), O, S, C=N(R9), C=C(R9R 10 ), or P(R9), wherein R9 and R 10 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms;

[0115] Ar 1 Ar 2 Ar 3 are each independently selected from a substituted or unsubstituted aromatic group or heteroaromatic group having 5 to 30 ring atoms, or a substituted or unsubstituted non-aromatic ring group having 5 to 30 ring atoms;

[0116] R is selected from hydrogen, deuterium, a halogen atom, a cyano group, an alkyl group, an alkoxy group, an amino group, an alkenyl group, an alkynyl group, an aralkyl group, a heteroalkyl group, an aryl group, or a heteroaryl group. The halogen atom is selected from F, Cl, Br, or I.

[0117] It should be noted that any connectable site in the above groups can be used as a connection site.

[0118] In some embodiments, one or more of the following groups are included in the first host material (bipolar N-type biased material):

[0119]

[0120] Wherein, X is selected from C and N, and at least one X is N;

[0121] When R 11 and R 12 each occur, they are independently selected from substituted or unsubstituted aromatic groups or heteroaromatic groups having 5 to 40 ring atoms, or aryloxy or heteroaryloxy groups having 5 to 40 ring atoms, or combinations of these systems. Adjacent R1 and R2 can be connected to each other to form a ring;

[0122] When R 13 and R 14 and R 15 and R 16 and R 17 and R 18 each occur, they are independently selected from H, or D, or straight-chain alkyl, alkoxy or thioalkoxy groups having 1 to 20 C atoms, or branched or cyclic alkyl, alkoxy or thioalkoxy groups having 3 to 20 C atoms, or silyl, or keto groups having 1 to 20 C atoms, or alkoxycarbonyl groups having 2 to 20 C atoms, or aryloxycarbonyl groups having 7 to 20 C atoms, CF3, Cl, Br, F, or substituted or unsubstituted aromatic groups or heteroaromatic groups having 5 to 40 ring atoms, or aryloxy or heteroaryloxy groups having 5 to 40 ring atoms, or combinations of these systems. Adjacent R 13 and R 14 and R 15 and R 16 and R 17 and R 18 can be connected to each other to form a ring.

[0123] Preferably, in some embodiments, the first host material has any one of the following structural formulas:

[0124]

[0125]

[0126] wherein the hydrogen atoms in the above structural formulas can be further substituted by any substituent.

[0127] The second host material contains the group shown in formula (III-1):

[0128]

[0129] wherein,

[0130] R 1 and R 2 and R 3 and R 4 and R 5 and R 6 and R 7 and R8 and R 9 each time it appears, is independently selected from H, or D, or a linear alkyl, alkoxy or thioalkoxy group having 1 to 20 C atoms, or a branched or cyclic alkyl, alkoxy or thioalkoxy group having 3 to 20 C atoms, or a silyl group, or a keto group having 1 to 20 C atoms, or an alkoxycarbonyl group having 2 to 20 C atoms, or an aryloxycarbonyl group having 7 to 20 C atoms, cyano (-CN), carbamoyl (-C(=O)NH2), halocarbonyl, formyl (-C(=O)-H), isocyano, isocyanate, thiocyanate or isothiocyanate, hydroxyl, nitro, CF3, Cl, Br, F, a crosslinkable group, or a substituted or unsubstituted aromatic group or heteroaromatic group having 5 to 40 ring atoms, or an aryloxy or heteroaryloxy group having 5 to 40 ring atoms, or a combination of these systems; adjacent R 1 and R 2 and R 3 and R 4 and R 5 and R 6 and R 7 and R 8 and R 9 may be connected to each other to form a ring, and R 1 and R 2 and R 3 and R 4 and R 5 and R 6 and R 7 and R 8 and R 9 at least one of them is selected from the structural formula (III-2);

[0131]

[0132] Ar3 and Ar4 are each independently selected from a substituted or unsubstituted aromatic group or heteroaromatic group having 5 to 30 ring atoms, or a substituted or unsubstituted non-aromatic cyclic group having 5 to 30 ring atoms;

[0133] L1 is selected from a single bond, a substituted or unsubstituted aryl or heteroaryl group having 5 to 30 ring atoms, or a substituted or unsubstituted non-aromatic cyclic group having 5 to 30 ring atoms;

[0134] Any two adjacent groups among Ar3, Ar4, and L1 may be connected to each other to form a ring.

[0135] In at least some embodiments, the second host material (bipolar p-type-biased material) may be selected from, but not limited to, any one of the following structures:

[0136]

[0137]

[0138] Among them, the hydrogen atoms in the above structure can be further substituted by any substituents.

[0139] The host material is selected from one or more of phosphorescent host materials, fluorescent host materials, and thermally activated delayed fluorescence host materials.

[0140] The phosphorescent host material can be selected from, but not limited to, one or more of iridium-containing phosphorescent host materials and platinum-containing phosphorescent host materials.

[0141] As an example, in some embodiments, the iridium-containing phosphorescent host material can be selected from, but not limited to, one or more of Ir(piq)2acac, Ir(hpiq)3, (pq)2Ir(acac), and (bpiq)2Ir(acac).

[0142] In a second aspect, an embodiment of the present application further provides an ink, including a solvent and the luminescent material composition described above.

[0143] In the ink, the mass percentage content of the luminescent material composition is 1 to 10%, for example, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, etc. Within this concentration range, the ink can have a good film-forming effect.

[0144] The solvent is selected from at least one of aromatic or heteroaromatic-based solvents, ester-based solvents, aromatic ketone-based solvents, aromatic ether-based solvents, aliphatic ketones, aliphatic ethers, alicyclic compounds, olefinic compounds, borate compounds, and phosphate compounds.

[0145] In at least one embodiment, the solvent is selected from aromatic or heteroaromatic-based solvents.

[0146] The aromatic or heteroaromatic-based solvent may be selected from, but not limited to, p-diisopropylbenzene, pentylbenzene, tetralin, cyclohexylbenzene, chloronaphthalene, 1,4-dimethylnaphthalene, 3-isopropylbiphenyl, p-methylcumene, dipentylbenzene, tripentylbenzene, amyltoluene, o-diethylbenzene, m-diethylbenzene, p-diethylbenzene, 1,2,3,4-tetramethylbenzene, 1,2,3,5-tetramethylbenzene, 1,2,4,5-tetramethylbenzene, butylbenzene, dodecylbenzene, dihexylbenzene, dibutylbenzene, p-diisopropylbenzene, cyclohexylbenzene, benzyl butylbenzene, dimethylnaphthalene, 3-isopropylbiphenyl, p-methylcumene, 1-methylnaphthalene, 1,2,4-trichlorobenzene, 4,4-difluorodiphenylmethane, 1,2-dimethoxy-4-(1-propenyl)benzene, diphenylmethane, 2-phenylpyridine, 3-phenylpyridine, N-methyldiphenylamine, 4-isopropylbiphenyl, α,α-dichlorodiphenylmethane, 4-(3-phenylpropyl)pyridine, benzyl benzoate, 1,1-bis(3,4-dimethylphenyl)ethane, 2-isopropylnaphthalene, quinoline, isoquinoline, methyl 2-furoate and ethyl 2-furoate, and at least one of them.

[0147] The ester-based solvent may be selected from, but not limited to, alkyl octanoate, alkyl sebacate, alkyl stearate, alkyl benzoate, alkyl phenylacetate, alkyl cinnamate, alkyl oxalate, alkyl maleate, alkanolide, alkyl oleate, etc. At least one of octyl octanoate, diethyl sebacate, diallyl phthalate and isononyl isononanoate is particularly preferred.

[0148] The aromatic ketone-based solvent may be selected from, but not limited to, 1-tetralone, 2-tetralone, 2-(phenyloxiranyl)tetralone, 6-(methoxy)tetralone, acetophenone, propiophenone, benzophenone, and their derivatives. Among them, as an example, the derivatives may be selected from, but not limited to, at least one of 4-methylacetophenone, 3-methylacetophenone, 2-methylacetophenone, 4-methylpropiophenone, 3-methylpropiophenone and 2-methylpropiophenone.

[0149] The aromatic ether-based solvent may be selected from, but not limited to, 3-phenoxytoluene, butoxybenzene, dimethyl acetal of p-anisaldehyde, tetrahydro-2-phenoxy-2H-pyran, 1,2-dimethoxy-4-(1-propenyl)benzene, 1,4-benzodioxane, 1,3-dipropylbenzene, 2,5-dimethoxytoluene, 4-ethylbenzyl methyl ether, 1,3-dipropoxybenzene, 1,2,4-trimethoxybenzene, 4-(1-propenyl)-1,2-dimethoxybenzene, 1,3-dimethoxybenzene, glycidyl phenyl ether, dibenzyl ether, 4-tert-butylanisole, trans-p-propenylanisole, 1,2-dimethoxybenzene, 1-methoxynaphthalene, diphenyl ether, 2-phenoxymethyl ether, 2-phenoxytetrahydrofuran and ethyl 2-naphthyl ether, and at least one of them.

[0150] The aliphatic ketone-based solvent may be selected from, but not limited to, 2-nonanone, 3-nonanone, 5-nonanone, 2-decanone, 2,5-hexanedione, 2,6,8-trimethyl-4-nonanone, fenchone, phorone, isophorone, di-n-amyl ketone, etc.; or aliphatic ethers, such as at least one of pentyl ether, hexyl ether, dioctyl ether, ethylene glycol dibutyl ether, diethylene glycol diethyl ether, diethylene glycol butyl methyl ether, diethylene glycol dibutyl ether, triethylene glycol dimethyl ether, triethylene glycol ethyl methyl ether, triethylene glycol butyl methyl ether, tripropylene glycol dimethyl ether, and tetraethylene glycol dimethyl ether.

[0151] It can be understood that the solvent can be used alone or as a mixed solvent of two or more solvents.

[0152] In some embodiments, the solvent suitable for this application is a solvent with a Hansen solubility parameter in the following range:

[0153] δd (dispersion force) is in the range of 17.0 - 23.2 MPa1 / 2, especially in the range of 18.5 - 21.0 MPa1 / 2;

[0154] δp (polar force) is in the range of 0.2 - 12.5 MPa1 / 2, especially in the range of 2.0 - 6.0 MPa1 / 2;

[0155] δh (hydrogen bond force) is in the range of 0.9 - 14.2 MPa1 / 2, especially in the range of 2.0 - 6.0 MPa1 / 2.

[0156] In some embodiments, for the composition of this application, the boiling point of the solvent needs to be considered when selecting the solvent. In at least some embodiments, the boiling point of the solvent ≥ 150 °C; preferably ≥ 180 °C; more preferably ≥ 200 °C; even more preferably ≥ 250 °C. Boiling points within these ranges are beneficial for preventing nozzle blockage of the inkjet print head.

[0157] It can be understood that the solvent can evaporate from the solvent system to form a thin film including the organic compound.

[0158] In some embodiments, the surface tension of the ink at 25 °C ranges from 19 dyne / cm to 60 dyne / cm, such as from 22 dyne / cm to 55 dyne / cm, or from 25 dyne / cm to 40 dyne / cm, or from 30 dyne / cm to 40 dyne / cm.

[0159] In some embodiments, the viscosity of the ink at 25 °C ranges from 1 cps to 100 cps, such as from 1 cps to 10 cps, from 1 cps to 50 cps, or from 1.5 cps to 20 cps, or from 2.0 cps to 15 cps.

[0160] In a third aspect, an embodiment of the present application further provides a light-emitting film, which includes the above-mentioned light-emitting material composition, or the light-emitting film is prepared from the above-mentioned ink through a film-forming process.

[0161] In at least one embodiment, the film-forming process is a solution method, and the solution method can be a spin coating method, a printing method, an inkjet printing method, a doctor blade method, a printing method, a dip coating method, a soaking method, a spraying method, a roll coating method, a casting method, a slot die coating method, a bar coating method, etc.

[0162] In a fourth aspect, an embodiment of the present application further provides a light-emitting device, which includes a light-emitting unit, and the material of the light-emitting unit includes the above-mentioned light-emitting material composition.

[0163] In some embodiments, the light-emitting unit is a red light-emitting unit.

[0164] In some embodiments, the light-emitting device includes a pixel region, and the pixel region includes the red light-emitting unit. It can be understood that the pixel region may further include one or more of a green light-emitting unit and a blue light-emitting unit.

[0165] It can be understood that the red light-emitting unit may be a red pixel unit, the green light-emitting unit may be a green pixel unit, and the blue light-emitting unit may be a blue pixel unit.

[0166] Please refer to Figure 1 , in some embodiments, an embodiment of the present application further provides a light-emitting device 100, which includes an anode 10, a light-emitting layer 20, and a cathode 30. The material of the light-emitting layer 20 includes the above-mentioned light-emitting material composition.

[0167] Please refer to Figure 2 , in one embodiment, the light-emitting device 100 further includes a hole transport layer 40 located between the anode 10 and the light-emitting layer 20. In other words, the light-emitting device 100 includes an anode 10, a hole transport layer 40, a light-emitting layer 20, and a cathode 30 stacked in sequence.

[0168] In one embodiment, the light-emitting device 100 further includes a hole injection layer 50 located between the anode 10 and the hole transport layer 40.

[0169] In one embodiment, the light-emitting device 100 further includes an electron transport layer 60 located between the light-emitting layer 20 and the cathode 30.

[0170] In one embodiment, the light-emitting device 100 further includes an electron injection layer 70 located between the electron transport layer 60 and the cathode 30.

[0171] The anode 10 and the cathode 30 are electrodes known in the art for light-emitting devices. For example, they can independently include, but are not limited to, doped metal oxide electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, elemental metal electrodes, or alloy electrodes. The materials of the doped metal oxide electrodes can include, but are not limited to, one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), aluminum-doped magnesium oxide (AMO), and cadmium-doped zinc oxide. The composite electrode is an electrode formed by laminating two or more layers of conductive materials, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / APC / ITO, IZO / Ag / IZO, IZO / APC / IZO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc., where " / " represents a laminated structure. For example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer, and an AZO layer laminated in sequence. The materials of the elemental metal electrodes can include, but are not limited to, one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg, and Ba. The alloy electrodes include, but are not limited to, Au:Mg alloy electrodes and Ag:Mg alloy electrodes.

[0172] In some embodiments, the anode is an electrode with a relatively high work function. For example, it can include, but is not limited to, a doped metal oxide electrode with a relatively high work function, an elemental metal electrode with a relatively high work function, and a carbon nanotube electrode. The elemental metal electrode with a relatively high work function can be selected from, but is not limited to, Ni, Pt, Au, Ag, Ir, etc.

[0173] In some embodiments, the cathode is an electrode with a relatively low work function. For example, it can include, but is not limited to, an elemental metal electrode with a relatively low work function, a composite electrode with a relatively low work function, and an alloy electrode with a relatively low work function. The elemental metal electrode with a relatively low work function can be Ca, Ba, Al, Mg, etc. The composite electrode with a relatively low work function can be Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. The alloy electrodes with a relatively low work function are Au:Mg and Ag:Mg, etc.

[0174] The material of the hole transport layer 40 can be a material known in the art for hole transport layers, and can also be a hole transport material sold by commercial companies. For example, it can be selected from, but not limited to, HTM014 (manufactured by Merck), HTM081 (manufactured by Merck), HTM163 (manufactured by Merck), HTM222 (manufactured by Merck), NHT-5 (manufactured by Novaled), NHT-18 (manufactured by Novaled), NHT-49 (manufactured by Novaled), NHT-51 (manufactured by Novaled), EL-301 (manufactured by Hodogaya), EL-22T (manufactured by Hodogaya), 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiro-NPB, poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',One or more of N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO.,

[0175] The material of the hole injection layer 50 can be a material known in the art for hole injection layers, and can also be a hole injection material sold by commercial companies. For example, it can be selected from, but not limited to, NDP-2 (manufactured by Novaled), NDP-9 (manufactured by Novaled), NHT-51 (manufactured by Novaled), F4-TCNQ, F6-TCNNQ, tetrafluorotetracyanoquinodimethane, 7,7,8,8-tetracyano-p-benzoquinodimethane, 4,4',4”-tris(2-naphthylphenylamino)triphenylamine (m-MTDATA), perylene tetracarboxylic dianhydride, pentacene, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3 (PEDOT:PSS:s-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetrafluorotetracyanoquinodimethane (F4-TCQN), copper phthalocyanine, copper hexadecafluorophthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide, or one or more of them.

[0176] The material of the electron transport layer 60 is a material known in the art for electron transport layers and can also be an electron transport material sold by commercial companies. For example, it can be selected from one or more of inorganic electron transport materials and organic electron transport materials. The inorganic electron transport materials include, but are not limited to, one or more of doped metal oxide particles, undoped metal oxide particles, ceramic semiconductor materials, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The metal oxides in the undoped metal oxide particles include, but are not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5. The metal oxides in the doped metal oxide include, but are not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, and the doping elements in the doped metal oxide include, but are not limited to, one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn. By way of example, the doped metal oxide can be aluminum-doped zinc oxide (AZO), lithium-doped zinc oxide (LZO), magnesium-doped zinc oxide (MZO), tin-doped zinc oxide (Sn-ZnO), etc. The ceramic semiconductor materials include, but are not limited to, barium titanate. The IIB-VIA group semiconductor materials include, but are not limited to, one or more of ZnS, ZnSe, CdS. The IIIA-VA group semiconductor materials include, but are not limited to, one or more of InP, GaP. The IB-IIIA-VIA group semiconductor materials include, but are not limited to, one or more of CuInS, CuGaS. The organic electron transport materials include, but are not limited to, one or more of NET-164 (manufactured by Novaled), NDN-87 (manufactured by Novaled), NDN-45 (manufactured by Novaled), NDN-18 (manufactured by Novaled), NDN-218 (manufactured by Novaled), ET093 (manufactured by Idemitsu Kosan), ETM020 (manufactured by Merck), ETM033 (manufactured by Merck), ETM034 (manufactured by Merck), ETM036 (manufactured by Merck), 4,6-bis(3,5-bis(pyridin-3-yl)phenyl)-2-methylpyrimidine, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-phenanthroline, 1,3,5-tris(1-phenyl-1H-benzoimidazol-2-yl)benzene, tris(8-hydroxyquinolinato)aluminum, lithium 8-hydroxyquinolate, bis(2-methyl-8-hydroxyquinolinato-N1,O8)-(1,1'-biphenyl-4-olato)aluminum, ionic conjugated polyelectrolytes.

[0177] The material of the electron injection layer 70 may be a material known in the art for electron injection layers, and may be selected from, for example, but not limited to, one or more of Yb (ytterbium), yttrium fluoride, Li, LiF, NaF, CsCO3, Cs, KBH4, and KH.

[0178] It can be understood that the light-emitting device 100 may further be provided with some functional layers that are conventionally used in light-emitting devices and are helpful for improving the performance of the light-emitting device, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc.

[0179] It can be understood that the materials of the respective layers of the light-emitting device 100 may be adjusted according to the light-emitting requirements of the light-emitting device 100.

[0180] In some embodiments, the light-emitting device 100 further includes a substrate, and the substrate is disposed on a side of the anode 10 away from the light-emitting layer 20, or the substrate is disposed on a side of the cathode 30 away from the light-emitting layer 20.

[0181] The substrate may be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate may include, but is not limited to, one or more of glass, silicon wafers, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0182] It can be understood that the light-emitting device 100 may be a normal light-emitting device or an inverted light-emitting device. The light-emitting device 100 may be an organic light-emitting device.

[0183] The light-emitting layer 20 of the light-emitting device 100 includes the light-emitting material composition described in the present application, and thus has a long lifespan.

[0184] In a fifth aspect, the present application further relates to a display device, and the display device includes the light-emitting device 100.

[0185] The display device may be any electronic product having a display function, and the electronic product includes, but is not limited to, a smart phone, a tablet computer, a laptop computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television, or an e-book reader. Among them, the smart wearable device may be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0186] The present application will be specifically described below through specific embodiments. The following embodiments are only partial embodiments of the present application and do not limit the present application. The raw materials used in the following embodiments are all commercially available products unless otherwise specified.

[0187] Example 1

[0188] Provide an ITO / Ag / ITO anode 10 with layer thicknesses of 7 nm / 110 nm / 10 nm respectively;

[0189] Deposit an NHT-51:NDP-9 hybrid material on the anode 10 and anneal it at 230 °C for 30 min to obtain a hole injection layer 50 with a thickness of 120 nm;

[0190] Deposit an NHT-51 material on the hole injection layer 50 and anneal it at 230 °C for 30 min to obtain a hole transport layer 40 with a thickness of 100 nm;

[0191] Deposit an ink on the hole transport layer 40 to obtain a light-emitting layer 20 with a thickness of 55 nm. The ink includes a light-emitting material composition and a solvent. The light-emitting material composition includes a red host material RH01, an electron donor material EDM1, and a red phosphorescent guest material Ir(btp)2(acac). The solvent is methyl benzoate; the content of RH01 in the light-emitting material composition is 80.5 wt%, the content of EDM1 is 9.5 wt%, and the content of the red phosphorescent guest material is 10 wt%;

[0192] Transfer the substrate to a vacuum chamber with a vacuum of 9*10 -7 torr, and deposit ETM036:LiQ on the light-emitting layer 20 to obtain an electron transport layer 60 with a thickness of 22 nm;

[0193] Evaporate Yb on the electron transport layer 60 to obtain an electron injection layer 70 with a thickness of 1 nm;

[0194] Evaporate Ag on the electron injection layer 70 to obtain a cathode 30 with a thickness of 18 nm;

[0195] Evaporate CPL008 (manufactured by Huari Optoelectronics) on the cathode 30 to form a light extraction layer with a thickness of 80 nm, obtaining a light-emitting device 100.

[0196] Example 2

[0197] This example is basically the same as Example 1, except that in this example, EDM3 is used to replace EDM1 in Example 1.

[0198] Example 3

[0199] This example is basically the same as Example 1, except that in this example, EDM5 is used to replace EDM1 in Example 1.

[0200] Example 4

[0201] This embodiment is basically the same as Embodiment 1, except that in this embodiment, EDM11 is used to replace EDM1 in Embodiment 1.

[0202] Embodiment 5

[0203] This embodiment is basically the same as Embodiment 1, except that in this embodiment, EDM15 is used to replace EDM1 in Embodiment 1.

[0204] Embodiment 6

[0205] This embodiment is basically the same as Embodiment 1, except that in this embodiment, EDM19 is used to replace EDM1 in Embodiment 1.

[0206] Embodiment 7

[0207] This embodiment is basically the same as Embodiment 1, except that in this embodiment, EDM21 is used to replace EDM1 in Embodiment 1.

[0208] Embodiment 8

[0209] This embodiment is basically the same as Embodiment 1, except that in this embodiment, EDM25 is used to replace EDM1 in Embodiment 1.

[0210] Embodiment 9

[0211] This embodiment is basically the same as Embodiment 1, except that in this embodiment, a composition of EDM1:EAM1 is used to replace EDM1 in Embodiment 1, and the mass ratio of EDM1 to EAM1 is 9.5:0.5.

[0212] Embodiment 10

[0213] This embodiment is basically the same as Embodiment 9, except that in this embodiment, the mass ratio of EDM1 to EAM1 is 9:1.

[0214] Embodiment 11

[0215] This embodiment is basically the same as Embodiment 9, except that in this embodiment, the mass ratio of EDM1 to EAM1 is 8:2.

[0216] Embodiment 12

[0217] This embodiment is basically the same as Embodiment 9, except that in this embodiment, a composition of EDM2:EAM3 is used to replace the composition of EDM1:EAM1 in Embodiment 9, and the mass ratio of EDM2 to EAM3 is 8:2.

[0218] Embodiment 13

[0219] This embodiment is basically the same as Embodiment 1, except that in this embodiment, the composition of EDM3:EAM5 is used to replace EDM1 in Embodiment 1, and the mass ratio of EDM3 to EAM5 is 8:2.

[0220] Embodiment 14

[0221] This embodiment is basically the same as Embodiment 1, except that in this embodiment, RH02 is used to replace RH01 in Embodiment 1.

[0222] Embodiment 15

[0223] This embodiment is basically the same as Embodiment 1, except that in this embodiment, RH07 is used to replace RH01 in Embodiment 1.

[0224] Embodiment 16

[0225] This embodiment is basically the same as Embodiment 1, except that in this embodiment, RH21 is used to replace RH01 in Embodiment 1.

[0226] Embodiment 17

[0227] This embodiment is basically the same as Embodiment 17, except that in this embodiment, RH22 is used to replace RH01 in Embodiment 17, and EAM1 is used to replace EDM1 in Embodiment 17.

[0228] Embodiment 18

[0229] This embodiment is basically the same as Embodiment 17, except that in this embodiment, EAM3 is used to replace EAM1 in Embodiment 17.

[0230] Embodiment 19

[0231] This embodiment is basically the same as Embodiment 17, except that in this embodiment, EAM5 is used to replace EAM1 in Embodiment 17.

[0232] Embodiment 20

[0233] This embodiment is basically the same as Embodiment 17, except that in this embodiment, EAM6 is used to replace EAM1 in Embodiment 17.

[0234] Embodiment 21

[0235] This embodiment is basically the same as Embodiment 17, except that in this embodiment, EAM11 is used to replace EAM1 in Embodiment 17.

[0236] Embodiment 22

[0237] This embodiment is basically the same as Embodiment 17, except that in this embodiment, EAM13 is used to replace EAM1 in Embodiment 17.

[0238] Example 23

[0239] This example is basically the same as Example 17, except that in this example, the composition of EDM1:EAM1 is used to replace EDM1 in Example 15, and the mass ratio of EDM1 to EAM1 is 0.5:9.5.

[0240] Example 24

[0241] This example is basically the same as Example 17, except that in this example, the composition of EDM1:EAM1 is used to replace EDM1 in Example 17, and the mass ratio of EDM1 to EAM1 is 1:9.

[0242] Example 25

[0243] This example is basically the same as Example 17, except that in this example, the composition of EDM1:EAM1 is used to replace EDM1 in Example 17, and the mass ratio of EDM1 to EAM1 is 2:8.

[0244] Example 26

[0245] This example is basically the same as Example 17, except that in this example, the composition of EDM6:EAM5 is used to replace the composition of EDM1:EAM1 in Example 17, and the mass ratio of EDM6 to EAM5 is 2:8.

[0246] Example 27

[0247] This example is basically the same as Example 17, except that in this example, the composition of EDM22:EAM6 is used to replace the composition of EDM1:EAM1 in Example 17, and the mass ratio of EDM22 to EAM6 is 2:8.

[0248] Example 28

[0249] This example is basically the same as Example 17, except that in this example, RH23 is used to replace RH22 in Example 17.

[0250] Example 29

[0251] This example is basically the same as Example 17, except that in this example, RH25 is used to replace RH22 in Example 17.

[0252] Example 30

[0253] This example is basically the same as Example 17, except that in this example, RH37 is used to replace RH22 in Example 17.

[0254] Comparative Example 1

[0255] Comparative Example 1 is basically the same as Example 1, except that the ink in this comparative example includes a luminescent material composition and a solvent. The luminescent material composition includes a red host material RH01 and a red phosphorescent guest material Ir(btp)2(acac). The solvent is methyl benzoate. In the luminescent material composition, the content of the red host material is 95 wt%, and the content of the red phosphorescent guest material is 5 wt%.

[0256] That is, the ink in this comparative example includes the red host material RH01 and does not include the electron donor material EDM1.

[0257] Comparative Example 2

[0258] This comparative example is basically the same as Comparative Example 1, except that this comparative example uses RH02 to replace RH01 in Comparative Example 1.

[0259] Comparative Example 3

[0260] This comparative example is basically the same as Comparative Example 1, except that this comparative example uses RH07 to replace RH01 in Comparative Example 1.

[0261] Comparative Example 4

[0262] This comparative example is basically the same as Comparative Example 1, except that this comparative example uses RH21 to replace RH01 in Comparative Example 1.

[0263] Comparative Example 5

[0264] This comparative example is basically the same as Comparative Example 1, except that this comparative example uses RH22 to replace RH01 in Comparative Example 1.

[0265] That is, the ink in this comparative example includes a green exciplex host material and does not include the red host material RH01.

[0266] In the above examples, the LUMO energy levels and HOMO energy levels of the host material, the first electron donor material, the second electron donor material, the first electron acceptor material, and the second electron acceptor material are shown in Table 1 below.

[0267] The method for determining the HOMO energy level and LUMO energy level in this application is as follows: Using TD-DFT (Time-Dependent Density Functional Theory) through Gaussian 09W (Gaussian Inc.), first optimize the molecular geometry structure with the semi-empirical method "Ground State / Semi-empirical / Default Spin / AM1" (Charge 0 / Spin Singlet), and then the energy structure of the organic molecule is calculated by the TD-DFT (Time-Dependent Density Functional Theory) method "TD-SCF / DFT / Default Spin / B3PW91" and the basis set "6-31G(d)" (Charge 0 / Spin Singlet). The HOMO and LUMO energy levels are calculated according to the following calibration formula:

[0268] HOMO (eV) = ((HOMO(G) × 27.212) - 0.9899) / 1.1206;

[0269] LUMO (eV) = ((LUMO(G) × 27.212) - 2.0041) / 1.385.

[0270] Among them, HOMO and LUMO are the direct calculation results of Gaussian 09W, and the unit is Hartree.

[0271] Table 1:

[0272]

[0273]

[0274] The color coordinates, current efficiency CE@1000nit, voltage at a current density of 10 mA / cm 2 (voltage@J10), and lifetime T95@1000nit of the light-emitting devices in Examples 1 to 30 and Comparative Examples 1 to 5 were tested, and the test results are shown in Table 2.

[0275] Among them, the current efficiency CE@1000nit uses the FushiDa FPD optical property measurement equipment, and through the efficiency test system built by controlling the QE PRO spectrometer, Keithley 2400, and Keithley 6485 with LabView, parameters such as voltage, current, brightness, and emission spectrum are measured, and the current efficiency is obtained through calculation.

[0276] The test method for the lifetime T95 is as follows: When the device is driven at a constant current density, the time required for the device brightness to decrease to a certain proportion of the maximum brightness. The time when the brightness drops to 95% of the maximum brightness is defined as T95, and this lifetime is the measured lifetime. To shorten the test cycle, the device lifetime test is usually carried out at high brightness by accelerating the device aging, and the lifetime at high brightness is obtained by fitting with an extended exponential decay brightness decay fitting formula. For example, the lifetime at 1000 nit is denoted as T95@1000 nit. The specific calculation formula is as follows:

[0277]

[0278] Where T95 L is the converted lifetime at 1000 nit, T95 H is the measured lifetime at a certain constant current density, L H is the actual brightness of the device at a certain constant current density, L L is 1000 nit, A is the acceleration factor. In this experiment, the lifetimes of several groups of red OLED devices were measured. Among them, the constant current density is 25 mA / cm 2 ², and the A value is 1.7.

[0279] Table 2:

[0280]

[0281]

[0282] It can be seen from Table 2 that:

[0283] Compared with the light-emitting devices of Comparative Examples 1-4, the light-emitting devices of Examples 1-16 have similar color coordinates, higher CE@1000 nit, and longer lifetimes. It can be seen that the light-emitting device using the light-emitting material composition of the present application as the light-emitting layer material can have a longer lifetime on the basis of ensuring better current efficiency and voltage@J10 of the light-emitting device. The reason may be that when the host material is a bipolar N-type biased material, adding the first polarity regulating material to the light-emitting material composition can effectively adjust the electron-hole injection balance inside the device, make the exciton recombination region far from the HT / EM interface, promote the charge balance of the device, avoid the occurrence of phenomena such as too narrow recombination region, triplet-triplet annihilation (TPQ), and interface quenching, thereby improving the efficiency and lifetime of the device and other performance;

[0284] Compared with the light-emitting devices of Comparative Example 5, the light-emitting devices of Examples 17 to 30 have similar color coordinates, higher CE@1000 nit, and longer lifetimes. It can be seen that the light-emitting devices using the light-emitting material composition of the present application as the light-emitting layer material can have a longer lifetime on the basis of ensuring good current efficiency and voltage@J10 of the light-emitting device. The reason may be that when the host material is a bipolar P-type material, adding the second polarity adjustment material to the light-emitting material composition can effectively adjust the electron-hole injection balance inside the device, move the exciton recombination region away from the ET / EM interface, promote the charge balance of the device, avoid the occurrence of phenomena such as too narrow recombination region, triplet-triplet annihilation (TPQ), and interface quenching, thereby improving the performance of the device such as efficiency and lifetime.

[0285] The technical solutions provided in the embodiments of the present application have been introduced in detail above. Specific examples are used in this article to elaborate on the principles and implementation manners of the present application. The descriptions of the above embodiments are only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manners and application scopes. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A luminescent material composition, characterized in that, It includes a host material and a polarity regulating material, wherein the absolute value of the ratio of the zero-field hole mobility to the zero-field electron mobility of the host material is not equal to 1.

2. The luminescent material composition according to claim 1, wherein the host material is a bipolar host material; and / or the polarity regulating material includes an electron donor material and / or an electron acceptor material; and / or the luminescent material composition further includes a guest material.

3. The luminescent material composition according to claim 2, wherein the host material includes a first host material, the absolute value of the ratio of the zero-field hole mobility to the zero-field electron mobility of the first host material is less than 1, the polarity regulating material includes a first polarity regulating material, the first polarity regulating material includes a first electron donor material, or the first polarity regulating material includes a mixed material of a first electron donor material and a first electron acceptor material; or the host material is a second host material, the absolute value of the ratio of the zero-field hole mobility to the zero-field electron mobility of the second host material is greater than 1, the polarity regulating material includes a second polarity regulating material, the second polarity regulating material includes a second electron acceptor material, or the second polarity regulating material includes a mixed material of a second electron donor material and a second electron acceptor material.

4. The luminescent material composition according to claim 3, wherein in the luminescent material composition, the content of the first host material is 79.2 to 84.915 wt%, the content of the guest material is 1 to 15 wt%, and the content of the first polarity regulating material is 0.085 to 19.8 wt%; or in the luminescent material composition, the content of the second host material is 79.2 to 84.915 wt%, the content of the guest material is 1 to 15 wt%, and the content of the second polarity regulating material is 0.085 to 19.8 wt%.

5. The luminescent material composition according to claim 3, wherein when the first polarity regulating material includes a mixed material of a first electron donor material and a first electron acceptor material, in the first polarity regulating material, the content of the first electron donor material is 80 to 95 wt%, and the content of the first electron acceptor material is 5 to 20 wt%; or when the second polarity regulating material includes a mixed material of a second electron donor material and a second electron acceptor material, in the second polarity regulating material, the content of the second electron donor material is 5 to 20 wt%, and the content of the second electron acceptor material is 80 to 95 wt%.

6. The luminescent material composition according to claim 3, wherein the absolute value of the difference between the LUMO energy level of the first electron donor material and the LUMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV, and the absolute value of the difference between the HOMO energy level of the first electron donor material and the HOMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV; or The absolute value of the difference between the LUMO energy level of the second electron donor material and the LUMO energy level of the second electron acceptor material is greater than or equal to 0.25 eV, and the absolute value of the difference between the HOMO energy level of the second electron donor material and the HOMO energy level of the second electron acceptor material is greater than or equal to 0.25 eV.

7. The luminescent material composition according to claim 3, wherein the absolute value of the difference between the HOMO energy level of the first electron donor material and the HOMO energy level of the host material is less than or equal to 0.3 eV, and the absolute value of the difference between the LUMO energy level of the first electron acceptor material and the LUMO energy level of the host material is less than or equal to 0.3 eV; or the absolute value of the difference between the HOMO energy level of the second electron donor material and the HOMO energy level of the host material is less than or equal to 0.3 eV, and the absolute value of the difference between the LUMO energy level of the second electron acceptor material and the LUMO energy level of the host material is less than or equal to 0.3 eV.

8. The luminescent material composition according to claim 3, wherein the triplet energy of the first electron donor material, the triplet energy of the first electron acceptor material, and the triplet energy of the first host material are all greater than the triplet energy of the guest material; or the triplet energy of the second electron donor material, the triplet energy of the second electron acceptor material, and the triplet energy of the second host material are all greater than the triplet energy of the guest material.

9. The luminescent material composition according to claim 3, characterized in that, The first electron donor material and the second electron donor material are each independently a structure represented by formula (I): Wherein, Ar1 is selected from a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, or a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms; K is a hole transport unit; m1 is selected from any integer from 1 to 6.

10. The luminescent material composition according to claim 9, wherein The K is selected from one or more of the following structures: Among them, Ar 11 is selected from a substituted or unsubstituted aromatic group having 6 to 40 carbon atoms, or a substituted or unsubstituted heteroaromatic group having 3 to 40 carbon atoms; Y1 and Y2 are each independently selected from a single bond, N(R3), C(R3R4), Si(R3R4), O, S, C=N(R3), C=C(R3R4), or P(R3); wherein, R1, R2, R3, and R4 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

11. The luminescent material composition according to claim 9, wherein The Ar1 and the K are each independently selected from one or more of the following structures: Wherein, Y1 and Y2 are selected from a single bond, N(R3), C(R3R4), Si(R3R4), O, S, C=N(R3), C=C(R3R4), or P(R3); Wherein, R1, R3, and R4 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

12. The luminescent material composition according to claim 3, wherein Each of the first electron donor material and the second electron donor material independently includes at least one of the compounds represented by the following structural formulas:

13. The luminescent material composition according to claim 3, wherein Each of the first electron acceptor material and the second electron acceptor material independently has the structure represented by formula (II): Wherein, Ar2 is selected from a substituted or unsubstituted aromatic group having 6 - 60 carbon atoms, or a substituted or unsubstituted heteroaromatic group having 3 - 60 carbon atoms; A is an electron transport unit; m2 is selected from an integer of 1 to 6.

14. The luminescent material composition according to claim 13, wherein A is selected from one or more of F, a cyano group, or the following groups: Wherein, a is 1, 2, or 3; X 1 to X 8 each independently selected from CR7 or N, and at least one is N; M 1 、M 2 、M 3 independently represent N(R7), C(R7R8), Si(R7R8), O, C=N(R7), C=C(R7R8), P(R7), respectively P(=O)R7, S, S=O, SO2, or none; R5, R6, R7, and R8 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

15. The luminescent material composition according to claim 3, characterized in that, Each of the first electron acceptor material and the second electron acceptor material independently includes at least one of the compounds represented by the following structural formulas:

16. The luminescent material composition according to claim 1, characterized in that The host material includes one or more of the following groups: Wherein: Each occurrence of v and n is independently an integer from 1 to 10; Each occurrence of X1 is independently selected from C and N, and at least one ring having X1 is N; Y is selected from a single bond, N(R9), C(R9R 10 ), Si(R9R 10 ), O, S, C═N(R9), C═C(R9R 10 ), or P(R9), where R9, R 10 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms; Ar 1 、Ar 2 、Ar 3 each independently selected from a substituted or unsubstituted aromatic group or heteroaromatic group having 5 to 30 ring atoms, or a substituted or unsubstituted non-aromatic cyclic group having 5 to 30 ring atoms; R is selected from hydrogen, deuterium, a halogen atom, a cyano group, an alkyl group, an alkoxy group, an amino group, an alkenyl group, an alkynyl group, an aralkyl group, a heteroalkyl group, an aryl group, or a heteroaryl group.

17. The luminescent material composition according to claim 3 or 16, characterized in that, The first host material contains one or more of the following groups: Wherein, X is selected from C and N, and at least one X is N; When R 11 and R 12 each occur, they are selected from substituted or unsubstituted aromatic or heteroaromatic groups having 5 to 40 ring atoms, or aryloxy or heteroaryloxy groups having 5 to 40 ring atoms, or combinations of these systems, and adjacent R1 and R2 may be joined to form a ring; When R 13 、R 14 、R 15 、R 16 、R 17 、R 18 appears each time, it is independently selected from H, or D, or a straight-chain alkyl, alkoxy or thioalkoxy group having 1 to 20 C atoms, or a branched or cyclic alkyl, alkoxy or thioalkoxy group having 3 to 20 C atoms, or a silyl group, or a keto group having 1 to 20 C atoms, or an alkoxycarbonyl group having 2 to 20 C atoms, or an aryloxycarbonyl group having 7 to 20 C atoms, CF3, Cl, Br, F, or a substituted or unsubstituted aromatic group or heteroaromatic group having 5 to 40 ring atoms, or an aryloxy or heteroaryloxy group having 5 to 40 ring atoms, or a combination of these systems, adjacent R 13 、R 14 、R 15 、R 16 、R 17 、R 18 may be joined to each other to form a ring.

18. The luminescent material composition according to claim 3, wherein The first host material has any one of the following structural formulas:

19. The luminescent material composition according to claim 3 or 16, characterized in that, The second host material contains the group represented by formula (III-1): Wherein, R 1 、R 2 、R 3 、R 4 、R 5 、R 6 、R 7 、R 8 、R 9 Each time it appears, it is independently selected from H, or D, or a straight-chain alkyl, alkoxy or thioalkoxy group having 1 to 20 C atoms, or a branched or cyclic alkyl, alkoxy or thioalkoxy group having 3 to 20 C atoms, or a silyl group, or a keto group having 1 to 20 C atoms, or an alkoxycarbonyl group having 2 to 20 C atoms, or an aryloxycarbonyl group having 7 to 20 C atoms, a cyano group, a carbamoyl group, a halocarbonyl group, a formyl group, an isocyano group, an isocyanate, a thiocyanate or an isothiocyanate, a hydroxyl group, a nitro group, CF3, Cl, Br, F, or a substituted or unsubstituted aromatic group or heteroaromatic group having 5 to 40 ring atoms, or an aryloxy or heteroaryloxy group having 5 to 40 ring atoms, or a combination of these systems; adjacent R 1 、R 2 、R 3 、R 4 、R 5 、R 6 、R 7 、R 8 、R 9 may be connected to each other to form a ring, and R 1 、R 2 、R 3 、R 4 、R 5 、R 6 、R 7 、R 8 、R 9 at least one of which is selected from the structural formula (III-2); Ar3 and Ar4 are each independently selected from a substituted or unsubstituted aromatic group or heteroaromatic group having 5 to 30 ring atoms, or a substituted or unsubstituted non-aromatic ring group having 5 to 30 ring atoms; L1 is selected from a single bond, a substituted or unsubstituted aryl group or heteroaryl group having 5 to 30 ring atoms, or a substituted or unsubstituted non-aromatic ring group having 5 to 30 ring atoms; Any two adjacent groups among Ar3, Ar4, and L1 can be connected to form a ring.

20. The luminescent material composition according to claim 3, wherein The second host material is selected from any one of the following structures:

21. The luminescent material composition according to claim 2, wherein The guest material is selected from a phosphorescent luminescent guest material, a fluorescent luminescent guest material, a thermally activated delayed fluorescence luminescent material; and / or The emission peak wavelength of the guest material is 580 - 650 nm.

22. An ink, characterized in that, comprising a solvent and the luminescent material composition according to any one of claims 1 to 21.

23. The ink according to claim 22, wherein in the ink, the mass percentage content of the luminescent material composition is 1 to 10%; and / or the solvent comprises one or more of aromatic hydrocarbon compounds, aromatic ester compounds, alkane compounds, aromatic hydrocarbon compounds, ether compounds, ketone compounds, and amine compounds.

24. A light-emitting device includes a light-emitting unit, characterized in that, The material of the light-emitting unit comprises the luminescent material composition according to any one of claims 1 to 21.

25. The light-emitting device according to claim 24, wherein The light-emitting unit is a red light-emitting unit, the red light-emitting unit comprises a light-emitting layer, and the material of the light-emitting layer comprises the luminescent material composition according to any one of claims 1 to 21.

26. The light-emitting device according to claim 25, wherein, The red light-emitting unit further comprises a cathode and an anode, the anode and the cathode each independently comprise a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal elemental electrode or an alloy electrode. The material of the doped metal oxide electrode comprises one or more of indium-doped tin oxide, zinc-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, and cadmium-doped zinc oxide. The composite electrode comprises AZO / Ag / AZO, AZO / APC / AZO, ITO / Ag / ITO, ITO / APC / ITO, IZO / Ag / IZO, IZO / APC / IZO, ZnO / Ag / ZnO, ZnO / APC / ZnO, TiO2 / Ag / TiO2, TiO2 / APC / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al or BaF2 / Ca / Al. The material of the metal elemental electrode comprises one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba. The alloy electrode comprises an Au:Mg alloy electrode or an Ag:Mg alloy electrode; and / or The red light-emitting unit further includes a hole transport layer, the hole transport layer is located between the anode and the light-emitting layer, and the materials of the hole transport layer include HTM014, HTM081, HTM163, HTM222, NHT-5, NHT-18, NHT-49, NHT-51, EL-301, EL-22T, 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiro-NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctoxy)-1,4-phenylene vinylene], 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or The red light-emitting unit further includes a hole injection layer, the hole injection layer is located between the anode and the light-emitting layer, and the material of the hole injection layer includes one or more of NDP-2, NDP-9, F4-TCNQ, F6-TCNNQ, tetracyanoquinodimethane, 7,7,8,8-tetracyano-p-benzoquinodimethane, 4,4',4”-tris(2-naphthylphenylamino)triphenylamine, perylene tetracarboxylic dianhydride, pentacene, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, copper hexadecafluorophthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide; and / or The red light-emitting unit further includes an electron transport layer, which is located between the light-emitting layer and the cathode. The material of the electron transport layer is selected from one or more of inorganic electron transport materials and organic electron transport materials. The inorganic electron transport materials include one or more of doped metal oxide particles, undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the doped metal oxide particles include one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS. The organic electron transport materials include one or more of NET-164, NDN-87, NDN-45, NDN-18, NDN-218, ET093, ETM020, ETM033, ETM034, ETM036, 4,6-bis(3,5-bis(pyridin-3-yl)phenyl)-2-methylpyrimidine, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-phenanthroline, 1,3,5-tris(1-phenyl-1H-benzoimidazol-2-yl)benzene, tris(8-hydroxyquinolinato)aluminum, lithium 8-hydroxyquinolate, bis(2-methyl-8-hydroxyquinolinato-N1,O8)-(1,1'-biphenyl-4-olato)aluminum, and ionic conjugated polyelectrolytes; and / or The red light-emitting unit further includes an electron injection layer, which is located between the electron transport layer and the cathode. The material of the electron injection layer includes one or more of Yb, yttrium fluoride, Li, LiF, NaF, CsCO3, Cs, KBH4, and KH.

27. A display device, characterized in that, The display device includes the light-emitting device according to any one of claims 24 to 26.

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