Adjustable hyperspectral chip

Abstract

The invention provides an adjustable hyperspectral chip, the adjustable hyperspectral chip comprises a plurality of spectrum modulation layers and an adjusting assembly, the plurality of spectrum modulation layers are stacked and arranged at intervals, each spectrum modulation layer comprises at least one light modulation unit, and at least part of the spectrum modulation layer comprises a plurality of light modulation units; the adjusting assembly is connected with at least part of the spectrum modulation layers and used for switching the corresponding light modulation units in the different spectrum modulation layers and / or adjusting the distance between the different spectrum modulation layers, so that superposition and switching of different light modulation effects are achieved, and optimal modulation presentation or multi-effect presentation is achieved. The adjustable hyperspectral chip provided by the invention not only can be used for single-point spectral modulation and is more suitable for hyperspectral imaging, but also can realize rapid switching of imaging wavebands through matching of different levels of spectral modulation layers, and is more beneficial to realizing multi-spectral image alignment and fusion.

Description

Technical Field

[0001] This application relates to the field of spectral imaging technology, and particularly to an adjustable hyperspectral chip. Background Art

[0002] Hyperspectral imaging technology is based on the combination of imaging technology and spectral technology. By detecting the two-dimensional geometric space and one-dimensional spectral information of the target, continuous and narrow-band image data with high spectral resolution can be obtained. Different from traditional grayscale (single-channel) or RGB (three-channel), hyperspectral images finely segment the absorption and reflection spectra of substances and have N channels in the spectral dimension. Therefore, what is obtained through a hyperspectral device is a data cube, which not only contains image information but also unfolds in the spectral dimension. As a result, not only the spectral data of each point on the image can be obtained, but also the image information of any spectral band can be obtained.

[0003] Currently, most hyperspectral imaging devices are based on dispersive, interferometric, filter-based, and computational reconstruction types. Most existing hyperspectral imaging devices have problems such as a single imaging band, a single modulation effect, and a conflict between imaging resolution and spatial resolution, and it is very difficult to modify and improve the modulation effect after the product is completed. This is mainly because the structure of existing hyperspectral imaging devices is not flexible. Although the tunable optical modulator based on traditional MEMS technology can perform spectral tunable operations within a small range, due to material property limitations, it still cannot break through the limitations between bands and cannot achieve real-time imaging and real-time data acquisition of a wide spectrum.

[0004] Therefore, there is an urgent need for a new hyperspectral chip solution. Summary of the Invention

[0005] In view of this, the purpose of this application is to propose an adjustable hyperspectral chip that can achieve the superposition and switching of different optical modulation effects.

[0006] To achieve the above purpose, an embodiment of this application discloses an adjustable hyperspectral chip, which includes:

[0007] A plurality of spectral modulation layers, the plurality of spectral modulation layers are stacked and spaced apart, each spectral modulation layer includes at least one optical modulation unit and at least some of the spectral modulation layers include a plurality of different optical modulation units; wherein, different optical modulation units have different micro-nano structures;

[0008] An adjustment component, the adjustment component is connected to at least some of the spectral modulation layers, and the adjustment component is used to switch the corresponding optical modulation units in different spectral modulation layers and / or adjust the distance between different spectral modulation layers.

[0009] In one embodiment, the adjustment component includes a central axis, and the central axis is connected to at least part of the spectral modulation layer; the central axis is used to drive the corresponding spectral modulation layer to rotate to switch the corresponding optical modulation unit; and / or, to drive the corresponding spectral modulation layer to move axially to adjust the distance between different spectral modulation layers.

[0010] In one embodiment, the adjustment component further includes a driving member, and the driving member is connected to the central axis to drive the central axis to rotate and / or move axially.

[0011] In one embodiment, at least part of the spectral modulation layer includes a plurality of different optical modulation units, and the plurality of different optical modulation units are distributed circumferentially along the central axis.

[0012] In one embodiment, the spectral modulation layer further includes a rotating disk, and the rotating disk is provided with openings. The optical modulation unit includes a substrate and micro-nano structures disposed on the substrate;

[0013] The optical modulation unit is disposed on the rotating disk, and the micro-nano structures are correspondingly disposed with the openings. At least part of the rotating disk is connected to the central axis and rotates and / or moves axially with the central axis.

[0014] In one embodiment, the optical modulation unit is connected to the rotating disk by means of slot limiting or gluing.

[0015] In one embodiment, the optical modulation unit is formed by one or more of thin film deposition, etching, direct writing, or 3D printing processes.

[0016] In one embodiment, the optical modulation unit includes one or more of an absorption filter layer, an interference filter layer, an induced transmission filter layer, a linear gradient filter layer, and a metasurface structure filter layer.

[0017] In one embodiment, the optical modulation unit includes micro-nano structures, and the micro-nano structures include one or more of metal / dielectric nanowire arrays, metal nanoparticle / nanopore arrays, FP interference cavities, waveguide layers, quantum dots, dyes, and metasurfaces.

[0018] Based on the same inventive concept, another embodiment of the present application discloses an adjustable hyperspectral chip, which includes:

[0019] A first spectral modulation layer and a second spectral modulation layer, the first spectral modulation layer and the second spectral modulation layer are stacked and spaced apart, the first spectral modulation layer at least includes a first light modulation unit and a second light modulation unit, and the second spectral modulation layer at least includes a third light modulation unit and a fourth light modulation unit; wherein, the first light modulation unit and the second light modulation unit have different micro-nano structures, and the third light modulation unit and the fourth light modulation unit have different micro-nano structures;

[0020] Wherein, the tunable hyperspectral chip includes a first state and a second state. In the first state, the first light modulation unit corresponds to the third light modulation unit, and the second light modulation unit corresponds to the fourth light modulation unit; in the second state, the first light modulation unit corresponds to the fourth light modulation unit, and the second light modulation unit corresponds to the third light modulation unit;

[0021] An adjustment component, the adjustment component is connected to the first spectral modulation layer and / or the second spectral modulation layer to switch the tunable hyperspectral chip between the first state and the second state; or, adjust the distance between the first spectral modulation layer and the second spectral modulation layer.

[0022] The tunable hyperspectral chip provided by the present application includes a plurality of spectral modulation layers and an adjustment component. The plurality of spectral modulation layers are stacked and spaced apart. Each spectral modulation layer includes at least one light modulation unit and at least some of the spectral modulation layers include a plurality of light modulation units; the adjustment component is connected to at least some of the spectral modulation layers for switching the corresponding light modulation units in different spectral modulation layers and / or adjusting the distance between different spectral modulation layers, so as to realize the superposition and switching of different light modulation effects, so as to achieve the optimal modulation presentation or multi-effect presentation.

[0023] The tunable hyperspectral chip provided by the present application can not only be used for single-point spectral modulation, but is more suitable for hyperspectral imaging. And through the matching of different hierarchical spectral modulation layers, the imaging band can be quickly switched, which is more conducive to realizing the alignment and fusion of multi-spectrum images. Description of the Drawings

[0024] Figure 1 It is a schematic structural diagram of a tunable hyperspectral chip provided by an embodiment of the present application;

[0025] Figure 2 It is a schematic structural diagram of a spectral modulation layer provided by an embodiment of the present application;

[0026] Figure 3 It is a schematic structural diagram of a rotating disk provided by an embodiment of the present application;

[0027] Figure 4Schematic diagram of the structure of the optical modulation unit provided by an embodiment of the present application;

[0028] Figure 5 Schematic diagram of the structure of the optical modulation unit provided by another embodiment of the present application;

[0029] Figure 6 Modulation effect diagram of the first modulator formed by the tunable hyperspectral chip provided by an embodiment of the present application;

[0030] Figure 7 Modulation effect diagram of the third modulator formed by the tunable hyperspectral chip provided by an embodiment of the present application;

[0031] Figure 8 Modulation effect diagram of the fourth modulator formed by the tunable hyperspectral chip provided by an embodiment of the present application.

[0032] Marking description:

[0033] M1, the first spectral modulation layer; M2, the second spectral modulation layer; N1, the first optical modulation unit; N2, the second optical modulation unit; N3, the third optical modulation unit; N4, the fourth optical modulation unit;

[0034] 10, spectral modulation layer; 11, optical modulation unit; 111, substrate; 112, micro-nano structure; 12, rotating sheet; 121, opening;

[0035] 20, adjustment component; 21, central axis. Specific embodiments

[0036] To make the objectives, technical solutions, and advantages of the present application clearer and more understandable, the following further elaborates on the present application in detail in conjunction with specific embodiments and with reference to the accompanying drawings.

[0037] It should be noted that unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present application should have the ordinary meaning understood by those with ordinary skills in the field to which the present application belongs. The "first", "second", and similar terms used in the embodiments of the present application do not indicate any sequence, quantity, or importance, but are only used to distinguish different components. The terms such as "including" or "comprising" mean that the elements or objects appearing before this word cover the elements or objects listed after this word and their equivalents, without excluding other elements or objects. The terms such as "connected" or "coupled" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The terms such as "upper", "lower", "left", "right", etc. are only used to represent relative positional relationships, and when the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0038] AsFigure 1 and 2 As shown in Figure 1 and 2 , an adjustable hyperspectral chip is provided in an embodiment of the present application. It includes a plurality of spectral modulation layers 10 and an adjustment component 20. The plurality of spectral modulation layers 10 are stacked and spaced apart. Each spectral modulation layer 10 includes at least one optical modulation unit 11, and at least some of the spectral modulation layers 10 include a plurality of different optical modulation units 11. Among them, different optical modulation units 11 have different micro-nano structures. The adjustment component 20 is connected to at least some of the spectral modulation layers 10, and the adjustment component 20 is used to switch the corresponding optical modulation units 11 in different spectral modulation layers 10 and / or adjust the distance between different spectral modulation layers 10.

[0039] The adjustable hyperspectral chip provided in this embodiment includes a plurality of spectral modulation layers 10 and an adjustment component 20. The plurality of spectral modulation layers 10 are stacked and spaced apart. Each spectral modulation layer 10 includes at least one optical modulation unit 11, and at least some of the spectral modulation layers 10 include a plurality of optical modulation units 11. The adjustment component 20 is connected to at least some of the spectral modulation layers 10 and is used to switch the corresponding optical modulation units 11 in different spectral modulation layers 10 and / or adjust the distance between different spectral modulation layers 10, so as to achieve the superposition and switching of different optical modulation effects, so as to achieve the optimal modulation presentation or multi-effect presentation.

[0040] The adjustable hyperspectral chip provided by the present application can not only be used for single-point spectral modulation, but is more suitable for hyperspectral imaging. And through the matching of different hierarchical spectral modulation layers 10, rapid switching of imaging bands can be realized, which is more conducive to realizing multi-spectrum image alignment and fusion.

[0041] Optionally, the optical modulation unit 11 is formed by one or more of the processes such as thin film deposition, etching, direct writing, or 3D printing.

[0042] Optionally, the optical modulation unit 11 includes one or more of an absorption filter layer, an interference filter layer, an induced transmission filter layer, a linear gradient filter layer, a metasurface structure filter layer, etc.

[0043] Optionally, the optical modulation unit 11 includes a micro-nano structure 112, and the micro-nano structure 112 includes one or more of a metal / dielectric nanowire array, a metal nanoparticle / nanopore array, an FP interference cavity, a waveguide layer, a quantum dot, a dye, a metasurface, etc.

[0044] Referring to Figure 1As shown, in a specific embodiment, the tunable hyperspectral chip includes a first spectral modulation layer M1, a second spectral modulation layer M2, and an adjustment component 20. The first spectral modulation layer M1 and the second spectral modulation layer M2 are stacked and spaced apart. The first spectral modulation layer M1 includes at least a first optical modulation unit N1 and a second optical modulation unit N2, and the second spectral modulation layer M2 includes at least a third optical modulation unit N3 and a fourth optical modulation unit N4. Among them, the first optical modulation unit N1 and the second optical modulation unit N2 have different micro-nano structures 112, and the third optical modulation unit N3 and the fourth optical modulation unit N4 have different micro-nano structures 112.

[0045] Among them, the tunable hyperspectral chip includes a first state and a second state. In the first state, the first optical modulation unit N1 corresponds to the third optical modulation unit N3, and the second optical modulation unit N2 corresponds to the fourth optical modulation unit N4. In the second state, the first optical modulation unit N1 corresponds to the fourth optical modulation unit N4, and the second optical modulation unit N2 corresponds to the third optical modulation unit N3.

[0046] Optionally, the adjustment component 20 is connected to one of the first spectral modulation layer M1 or the second spectral modulation layer M2, and the other of the first spectral modulation layer M1 or the second spectral modulation layer M2 remains stationary. The adjustment component 20 drives the first spectral modulation layer M1 to move, so as to switch the tunable hyperspectral chip between the first state and the second state; or, adjust the distance between the first spectral modulation layer M1 and the second spectral modulation layer M2.

[0047] Optionally, the adjustment component 20 is connected to both the first spectral modulation layer M1 and the second spectral modulation layer M2 at the same time. The adjustment component 20 drives the first spectral modulation layer M1 and the second spectral modulation layer M2 to move simultaneously, and the moving speeds of the first spectral modulation layer M1 and the second spectral modulation layer M2 are different, so as to switch the tunable hyperspectral chip between the first state and the second state; or, adjust the distance between the first spectral modulation layer M1 and the second spectral modulation layer M2.

[0048] In other embodiments, the tunable hyperspectral chip includes three, four or more spectral modulation layers 10, and each spectral modulation layer 10 includes two, three or more optical modulation units, so that the tunable hyperspectral chip has more states, and different modulation effects are achieved in each state, improving the modulation performance of the tunable hyperspectral chip.

[0049] Refer to Figure 1As shown, in one embodiment, the adjustment component 20 includes a central axis 21, and the central axis 21 is connected to at least a part of the spectral modulation layer 10; the central axis 21 is used to drive the corresponding spectral modulation layer 10 to rotate to switch the corresponding optical modulation unit 11; and / or, to drive the corresponding spectral modulation layer 10 to move axially to adjust the distance between different spectral modulation layers 10. Optionally, the central axis 21 is a stainless steel central axis with a diameter of 1-2 mm; such as 1 mm, 1.5 mm, 1.8 mm or 2 mm, etc., and there is no specific limitation.

[0050] Take the optical modulation unit 11 including the first spectral modulation layer M1 or the second spectral modulation layer M2 as an example. The first spectral modulation layer M1 includes the first optical modulation unit N1 and the second optical modulation unit N2, and the second spectral modulation layer M2 includes the third optical modulation unit N3 and the fourth optical modulation unit N4. The central axis 21 can be connected to the first spectral modulation layer M1 or the second spectral modulation layer M2. When the central axis 21 rotates, it drives the first spectral modulation layer M1 or the second spectral modulation layer M2 to rotate, switching the tunable hyperspectral chip between the first state and the second state. Or drive the first spectral modulation layer M1 or the second spectral modulation layer M2 to move axially to adjust the distance between the first spectral modulation layer M1 and the second spectral modulation layer M2.

[0051] In one embodiment, the adjustment component 20 further includes a driving member, and the driving member is connected to the central axis 21 to drive the central axis 21 to rotate and / or move axially. Optionally, the driving member includes a motor. The rotation of the motor drives the central axis 21 to rotate, and the motor can also drive the central axis 21 to move axially through a transmission structure. Among them, the transmission structure can be a rack and pinion or a lead screw and nut, etc. In other embodiments, the transmission structure can be a cylinder or an electric cylinder, etc.

[0052] In one embodiment, in the spectral modulation layer 10 including a plurality of different optical modulation units 11, the plurality of different optical modulation units 11 are evenly distributed along the circumferential direction of the central axis 21, ensuring that after the central axis 21 rotates a predetermined angle each time, the corresponding optical modulation unit 11 in different spectral modulation layers 10 can be switched. Exemplarily, the spectral modulation layer 10 includes three optical modulation units 11, and the three optical modulation units 11 are evenly distributed along the circumferential direction of the central axis 21. The adjacent two optical modulation units 11 differ by 120 degrees, and the central axis 21 can switch the corresponding optical modulation unit 11 in different spectral modulation layers 10 every time it rotates 120 degrees.

[0053] Refer to Figures 2-5As shown, in one embodiment, the spectral modulation layer 10 further includes a rotating sheet 12. An opening 121 is provided on the rotating sheet 12. The optical modulation unit 11 includes a substrate 111 and a micro-nano structure 112 disposed on the substrate 111. The optical modulation unit 11 is disposed on the rotating sheet 12, and the micro-nano structure 112 is correspondingly disposed with the opening 121. At least a part of the rotating sheet 12 is connected to the central axis 21 and rotates and / or moves axially along with the central axis 21. Among them, by disposing the optical modulation unit 11 on the rotating sheet 12, connecting the central axis 21 to the rotating sheet 12 and driving the rotating sheet 12 to rotate or move axially, the stability during the movement of the optical modulation unit 11 is ensured, and the stability and accuracy of the tunable hyperspectral chip structure are ensured.

[0054] Optionally, the optical modulation unit 11 is connected to the rotating sheet 12 by means of slot limiting or gluing to ensure the stability between the optical modulation unit 11 and the rotating sheet 12.

[0055] Optionally, the rotating sheet 12 is a circular acrylic rotating sheet with a thickness of 0.3 - 0.5 mm and a diameter of 1 - 2 cm. The center of the circular acrylic rotating sheet is an opening with a diameter of 1 - 2 mm for connecting to the central axis 21; and rectangular openings 121 facing the center are distributed on the circular acrylic rotating sheet, with a size of 9 - 81 mm 2 . Exemplarily, the thickness of the circular acrylic rotating sheet is 0.3 mm, 0.35 mm, 0.4 mm, 0.45 mm, 0.5 mm, etc.; the diameter is 1 cm, 1.2 cm, 1.5 cm, 1.8 cm, 2 cm, etc.; the diameter of the central opening is 1 cm, 1.2 cm, 1.5 cm, 1.8 cm, 2 cm, etc., and no specific limitation is made.

[0056] Among them, the optical modulation unit 11 is composed of materials corresponding to the application spectral bands. For example, within the visible and near-infrared bands (380 nm - 1100 nm), materials such as silica, silicon nitride, alumina, and various metals are used. Within the short-wave infrared - long-wave infrared bands (1100 nm - 12000 um), materials such as silicon, germanium, zinc sulfide, zinc selenide, and various metals are used. The structure of the optical modulation unit 11 is fabricated on different material substrates 111 according to the application bands. For example, within the visible and near-infrared bands, substrates such as silica and alumina are used. Within the short-wave infrared - long-wave infrared bands, substrates such as silicon, germanium, and chalcogenide glasses are used.

[0057] Among them, different micro-nano structures refer to at least one difference in materials, sizes, and arrangement methods to obtain different optical modulation effects. For example, in the first spectral modulation layer M1, the first optical modulation unit N1 is a metal thin film based on glass; the second optical modulation unit N2 is a stacked material of a metal thin film based on glass and an oxide.

[0058] Another embodiment of the present application provides a method for preparing an adjustable hyperspectral chip for preparing an adjustable hyperspectral chip as shown in Figures 1-5 and includes the following steps:

[0059] Step S10: Prepare the first optical modulation unit N1;

[0060] Specifically, a silver film region with an area of 6*6 mm is grown in the center of a glass substrate 111 with a thickness of 0.3 mm and a size of 7*7 mm by methods such as evaporation or magnetron sputtering, as shown in reference to Figure 4 . Among them, the silver film region forms a micro-nano structure 112.

[0061] Step S20: Prepare the third optical modulation unit N3;

[0062] Specifically, a silver film region with an area of 6*6 mm is grown in the center of a glass substrate 111 with a thickness of 0.3 mm and a size of 7*7 mm by methods such as evaporation or magnetron sputtering, as shown in reference to Figure 4 . Among them, the silver film region forms a micro-nano structure 112.

[0063] Step S30: Prepare the second optical modulation unit N2;

[0064] Specifically, a silver film region with an area of 6*6 mm is grown in the center of a glass substrate with a thickness of 0.3 mm and a size of 7*7 mm by methods such as evaporation or magnetron sputtering; the silver film region is divided into 4 regions of 3*3 mm, and silicon dioxide thin films with thicknesses of 40 nm, 80 nm, 120 nm, and 160 nm are sequentially grown on the silver film by methods such as evaporation or magnetron sputtering, as shown in reference to Figure 5 . Among them, the silver film and the silicon dioxide thin film form a micro-nano structure 112.

[0065] Step S40: Prepare the fourth optical modulation unit N4;

[0066] Specifically, a silver film region with an area of 6*6 mm is grown in the center of a glass substrate with a thickness of 0.3 mm and a size of 7*7 mm by methods such as evaporation or magnetron sputtering; the silver film region is divided into 4 regions of 3*3 mm, and silicon dioxide thin films with thicknesses of 40 nm, 80 nm, 120 nm, and 160 nm are sequentially grown on the silver film by methods such as evaporation or magnetron sputtering, as shown in reference to Figure 5 . Among them, the silver film and the silicon dioxide thin film form a micro-nano structure 112.

[0067] Step S50: A circular opening with a diameter of 2 mm is obtained by laser etching at the center of a first acrylic disc with a thickness of 0.3 mm and a diameter of 2 cm. Taking the center of the disc as the origin 0, with the coordinates (±0.5 mm, 0 mm) as the center of a rectangle, two rectangular openings 121 with a size of 6 mm * 6 mm are obtained by laser etching. The micro-nano structures 112 of the third light modulation unit N3 and the fourth light modulation unit N4 are respectively aligned with the two rectangular openings 121, and are fixed on the acrylic disc by means of gluing or slotting and fiber around, forming a first spectral modulation layer M1.

[0068] Step S60: A circular opening with a diameter of 2 mm is obtained by laser etching at the center of a second acrylic disc with a thickness of 0.3 mm and a diameter of 2 cm. Taking the center of the disc as the origin 0, with the coordinates (±0.5 mm, 0 mm) as the center of a rectangle, two rectangular openings 121 with a size of 6 mm * 6 mm are obtained by laser etching. The micro-nano structures 112 of the third light modulation unit N3 and the fourth light modulation unit N4 are respectively aligned with the two rectangular openings 121, and are fixed on the acrylic disc by means of gluing or slotting and limiting around, forming a second spectral modulation layer M2.

[0069] Step S70: The first spectral modulation layer M1 and the second spectral modulation layer M2 are connected in series through a stainless steel central axis 21. The first spectral modulation layer M1 is completely fixed on the stainless steel central axis 21 by gluing. The second spectral modulation layer M2 does not move with the stainless steel central axis, as Figure 1 shown. The end of the stainless steel central axis 21 is connected to a micromotor, and the micromotor controls the rotation and axial movement of the stainless steel central axis 21. At the same time, the first spectral modulation layer M1 also rotates and moves axially with the stainless steel central axis. The initial position distance between the first spectral modulation layer M1 and the second spectral modulation layer M2 is 1 um. The first light modulation unit N1 is completely aligned with the fourth light modulation unit N4, forming a first modulator. The first modulator is a spectral modulator including four channels. The second light modulation unit N2 is completely aligned with the third light modulation unit N3, forming a second modulator. The second modulator is a spectral modulator including four channels.

[0070] Specifically, the first optical modulation unit N1 and the fourth optical modulation unit N4 form a Fabry-Perot (F-P) array interference cavity with a spacing of 1 μm, which serves as the first modulator. The incident light enters the first optical modulation unit N1 and, after interacting with the fourth optical modulation unit N4, oscillates in the interference cavity and then exits from the fourth optical modulation unit N4 to complete the modulation. The second optical modulation unit N2 and the third optical modulation unit N3 form a Fabry-Perot (F-P) array interference cavity with a spacing of 1 μm, which serves as the second modulator. The incident light enters the second optical modulation unit N2 and, after interacting with the third optical modulation unit N3, oscillates in the interference cavity and then exits from the third optical modulation unit N3 to complete the modulation. In the initial state, the modulation effects of the first modulator and the second modulator are exactly the same, as Figure 6 shown.

[0071] When the micromotor rotates 180° and moves 0.5 μm in the axial direction, the first optical modulation unit N1 and the third optical modulation unit N3 are completely aligned to form a Fabry-Perot (F-P) array interference cavity with a spacing of 1.5 μm, which serves as the third modulator. The second optical modulation unit N2 and the fourth optical modulation unit N4 are completely aligned to form a Fabry-Perot (F-P) array interference cavity with a spacing of 1.5 μm, which serves as the fourth modulator. At this time, the third modulator and the fourth modulator have completely different modulation effects, as Figure 7 and Figure 8 shown.

[0072] It should be noted that "a certain body" and "a certain part" can be a part of the corresponding "component", that is, "a certain body" and "a certain part" are integrally formed with the "other parts of the component"; or they can be an independent component separable from the "other parts of the component", that is, "a certain body" and "a certain part" can be manufactured independently and then combined with the "other parts of the component" to form a whole. The expressions of "a certain body" and "a certain part" in this application are only one of the implementation manners for the convenience of reading, rather than a limitation on the protection scope of this application. As long as the above features are included and the functions are the same, it should be understood as an equivalent technical solution of this application.

[0073] It should be noted that some implementation manners of this application have been described above. Other implementation manners are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be executed in a different order from that in the above implementation manners and still achieve the desired results. In addition, the processes depicted in the drawings do not necessarily require the specific order or continuous order shown to achieve the desired results.

[0074] Those of ordinary skill in the art should understand that any discussion of the above embodiments is merely exemplary and is not intended to imply that the scope of the present application (including the claims) is limited to these examples; under the concept of the present application, the technical features in the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations in different aspects of the embodiments of the present application as described above, and they are not provided in detail for the sake of brevity.

[0075] The embodiments of the present application are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the embodiments of the present application shall be included within the protection scope of the present application.

Claims

1. An adjustable hyperspectral chip, characterized in that, Comprising: A plurality of spectral modulation layers, the plurality of spectral modulation layers being stacked and spaced apart, each spectral modulation layer including at least one optical modulation unit and at least some of the spectral modulation layers including a plurality of different optical modulation units; wherein, the different optical modulation units have different micro-nano structures; An adjustment component, the adjustment component being connected to at least some of the spectral modulation layers, the adjustment component being configured to switch the corresponding optical modulation units in different spectral modulation layers and / or adjust the distance between different spectral modulation layers.

2. The adjustable hyperspectral chip according to claim 1, wherein The adjustment component includes a central axis, the central axis being connected to at least some of the spectral modulation layers; the central axis is configured to drive the corresponding spectral modulation layer to rotate to switch the corresponding optical modulation unit; and / or, to drive the corresponding spectral modulation layer to move axially to adjust the distance between different spectral modulation layers.

3. The adjustable hyperspectral chip according to claim 2, wherein The adjustment component further includes a driving member, the driving member being connected to the central axis to drive the central axis to rotate and / or move axially.

4. The adjustable hyperspectral chip according to claim 2, wherein In the spectral modulation layer including a plurality of different optical modulation units, the plurality of different optical modulation units are uniformly distributed along the circumferential direction of the central axis.

5. The adjustable hyperspectral chip according to claim 2, characterized in that, The spectral modulation layer further includes a rotating disk, the rotating disk being provided with openings, and the optical modulation unit includes a substrate and a micro-nano structure disposed on the substrate; The optical modulation unit is disposed on the rotating disk, and the micro-nano structure is disposed corresponding to the opening, at least some of the rotating disk being connected to the central axis and rotating and / or moving axially with the central axis.

6. The adjustable hyperspectral chip according to claim 5, wherein The optical modulation unit is connected to the rotating disk by means of slot limiting or gluing.

7. The adjustable hyperspectral chip according to claim 1, wherein The optical modulation unit is formed by one or more of thin film deposition, etching, direct writing, or 3D printing processes.

8. The adjustable hyperspectral chip according to claim 1, wherein The optical modulation unit includes one or more of an absorption filter layer, an interference filter layer, an induced transmission filter layer, a linear gradient filter layer, a metasurface structure filter layer.

9. The adjustable hyperspectral chip according to claim 1, wherein The optical modulation unit includes a micro-nano structure, and the micro-nano structure includes one or more of a metal / dielectric nanowire array, a metal nanoparticle / nanopore array, an FP interference cavity, a waveguide layer, a quantum dot, a dye, a metasurface.

10. An adjustable hyperspectral chip, characterized in that, Comprising: A first spectral modulation layer and a second spectral modulation layer, the first spectral modulation layer and the second spectral modulation layer being stacked and spaced apart, the first spectral modulation layer including at least a first optical modulation unit and a second optical modulation unit, and the second spectral modulation layer including at least a third optical modulation unit and a fourth optical modulation unit; wherein, the first optical modulation unit and the second optical modulation unit have different micro-nano structures, and the third optical modulation unit and the fourth optical modulation unit have different micro-nano structures; Wherein, the tunable hyperspectral chip includes a first state and a second state. In the first state, the first optical modulation unit corresponds to the third optical modulation unit, and the second optical modulation unit corresponds to the fourth optical modulation unit; in the second state, the first optical modulation unit corresponds to the fourth optical modulation unit, and the second optical modulation unit corresponds to the third optical modulation unit; An adjustment component, the adjustment component is connected to the first spectral modulation layer and / or the second spectral modulation layer to switch the tunable hyperspectral chip between the first state and the second state; or, adjust the distance between the first spectral modulation layer and the second spectral modulation layer.

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