X-ray source

Abstract

The invention relates to the technical field of X-rays, and discloses an X-ray source which comprises a lamp filament, an X-ray metal target and a blocking part. A blocking part is arranged between the lamp filament and the X-ray metal target so as to prevent impurities generated by the X-ray metal target from polluting the lamp filament, and the blocking part penetrates through electron beams. The problem of sputtering pollution of the X-ray target in the prior art is solved. If the thickness of sputtering pollutants deposited on the blocking part is large, and transmission of electron beams is affected, the blocking part can be replaced at any time, and due to the fact that the blocking part is low in price, the service life of the lamp filament is prolonged to a great extent, and the cost of the expensive lamp filament is indirectly reduced. In addition, the metal vapor is prevented from being condensed and deposited on the surface of the insulating part in the vacuum system, and the working stability of the insulating part is guaranteed.

Description

Technical Field

[0001] The present invention relates to the field of X-ray technology, and more particularly to an X-ray source. Background Art

[0002] X-rays have the advantages of short wavelength and strong penetration ability. With the development of science and technology, they have been widely used in X-ray test instruments and X-ray imaging devices, such as X-ray photoelectron spectroscopy equipment. For common laboratory X-ray sources, an electron beam generated at a cathode filament and accelerated strikes an X-ray metal target, such as tungsten, copper, chromium, magnesium, aluminum, etc., to generate characteristic X-rays of the target material for X-ray analysis or imaging.

[0003] During the process of the electron beam bombarding the target material, since the vast majority (about 99%) of the electron beam power is finally deposited in the target material in the form of heat, if the electron beam power is too large, the target material will be locally melted, thereby generating vapors of the target material and other impurities. The vapors will diffuse in all directions in space, and a part of them will be deposited on the filament, causing filament contamination and affecting the electron emission characteristics of the filament. In severe cases, the filament will not be able to work properly, especially for low-melting-point target materials such as magnesium and aluminum. In addition, if there are surface-insulated measurement components in the vacuum system, they will also not be able to work properly due to the condensation deposition of metal vapors. Currently, there is no good solution to the sputtering contamination problem of such X-ray targets. Summary of the Invention

[0004] In view of this, the present invention provides an X-ray source to solve the sputtering contamination problem of the X-ray target in the prior art.

[0005] In a first aspect, the present invention provides an X-ray source, which includes: a filament, an X-ray metal target, and a blocking component;

[0006] A blocking component is arranged between the filament and the X-ray metal target to prevent impurities generated by the X-ray metal target from contaminating the filament, wherein the blocking component penetrates the electron beam.

[0007] The X-ray source proposed by the present invention is provided with a blocking component between the filament and the X-ray metal target. Due to the setting of the blocking component, the sputtering pollutants generated from the X-ray metal target will be blocked by the blocking component and will not be deposited on the filament, so the filament will not be contaminated, thereby prolonging the service life of the filament. Moreover, if the thickness of the sputtering pollutants deposited on the blocking component is too large, resulting in too low a transmittance of the electron beam, the blocking component can be replaced at any time. Since the price of the blocking component is low and the price of the filament is high, the cost of the expensive filament is indirectly reduced. In addition, it also prevents the metal vapor from condensing and depositing on the insulating surface of the measuring component in the vacuum system, ensuring the working stability of the insulating measuring component. And the main advantage of the X-ray source of the present invention is that the blocking component between the filament and the X-ray metal target hardly attenuates the high-energy electron beam and can block the sputtering impurity vapor generated at the X-ray metal target from contaminating the filament, that is, the X-ray source can effectively prevent the impurities sputtered from the X-ray metal target from contaminating the filament and prolong the service life of the filament while not reducing the intensity of the generated X-rays.

[0008] In an alternative embodiment, the blocking component includes: a fixing component and an electron beam penetration component;

[0009] The fixing component is provided with a hollowed-out area, and the electron beam penetration component is fixed in the hollowed-out area.

[0010] In an alternative embodiment, the fixing component is fixedly connected to the X-ray metal target; or,

[0011] The X-ray source further includes: a filament outer structure;

[0012] The fixing component is fixedly connected to the filament outer structure.

[0013] In an alternative embodiment, the electron beam penetration component is adhered to the hollowed-out area, or the electron beam penetration component is stuck in the hollowed-out area.

[0014] In an alternative embodiment, the fixing component includes: a fixing plate and a support member;

[0015] The fixing plate and the support member are connected, and the fixing plate is provided with a hollowed-out area;

[0016] The support member is connected to the filament outer structure, or the support member is connected to the X-ray metal target.

[0017] In an alternative embodiment, the fixing plate is provided with one or more hollowed-out areas.

[0018] In an alternative embodiment, the electron beam penetration component includes a base member and a thin film member. The thin film member is disposed on a window structure of the base member, and the window structure includes a single window structure and a multi-window structure.

[0019] In an alternative embodiment, a conductive layer is provided on an incident surface of the thin film member, and the thin film member is made of silicon nitride.

[0020] In an alternative embodiment, an area of the thin film member is larger than an area of an electron beam incident on a position of the thin film member.

[0021] In an alternative embodiment, a thickness of the thin film member is determined according to an electron energy incident on the thin film member. Description of the Drawings

[0022] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings required for the description of the specific embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0023] Figure 1 is a structural diagram of an X-ray source according to an embodiment of the present invention;

[0024] Figure 2 is a structural diagram of a blocking member in an X-ray source according to an embodiment of the present invention;

[0025] Figure 3 is a detailed structural diagram of a blocking member in an X-ray source according to an embodiment of the present invention.

[0026] Explanation of the Reference Numerals in the Drawings:

[0027] 1 - Filament; 2 - Structure outside the filament; 3 - Electron beam emitted from the filament; 4 - Blocking member; 5 - X-ray metal target; 6 - X-ray generated after the electron beam hits the target; 7 - Electron beam penetration component; 8 - Fixing component; 9 - Conductive layer; 10 - Thin film member; 11 - Base member. Detailed Embodiments

[0028] The following will clearly and completely describe the technical solutions of the present invention with reference to the drawings. Obviously, the described embodiments are some embodiments of the present invention, rather than all embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the protection scope of the present invention.

[0029] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present invention. In addition, the terms "first", "second", "third" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance.

[0030] In the description of the present invention, it should be noted that unless otherwise clearly specified and defined, the terms "installed", "connected", "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and can also be the communication inside two elements. It can be a wireless connection or a wired connection. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0031] In addition, the technical features involved in different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0032] X-rays have the advantages of short wavelength and strong penetration ability. With the development of science and technology, they have been widely used in X-ray testing instruments and X-ray imaging devices, such as X-ray photoelectron spectroscopy equipment. For common laboratory X-ray sources, an electron beam generated at the cathode filament and accelerated impacts an X-ray metal target, such as tungsten, copper, chromium, magnesium, aluminum, etc., to generate characteristic X-rays of the target material for X-ray analysis or imaging.

[0033] During the process of the electron beam bombarding the target material, since the vast majority (~99%) of the electron beam power is finally deposited in the target material in the form of heat, if the electron beam power is too large, the target material will be locally melted, thus generating vapors of the target material and other impurities. The vapors will diffuse everywhere in space, and a part of them will be deposited on the filament, causing filament contamination and affecting the electron emission characteristics of the filament. In severe cases, it will cause the filament to fail to work properly, especially for low-melting-point target materials such as magnesium and aluminum. In addition, if there are surface-insulated measurement components in the vacuum system, they will also fail to work properly due to the condensation and deposition of metal vapors. At present, there is no good solution to the sputtering contamination problem of this kind of X-ray target.

[0034] In response to this, in this embodiment, an X-ray source is provided, such as Figure 1 shown, the X-ray source includes: a filament 1, an X-ray metal target 5, and a blocking member 4;

[0035] A blocking component 4 is provided between the filament 1 and the X-ray metal target 5 to prevent the diffusion of impurities generated by the X-ray metal target 5, wherein the blocking component 4 penetrates the electron beam.

[0036] Specifically, referring to Figure 1 , 3 is the electron beam emitted by the filament, and 6 is the X-ray generated after the electron beam hits the target. After the electron beam 3 emitted by the filament passes through the blocking component 4, it is transmitted to the X-ray metal target 5 and output as the X-ray 6 generated after the electron beam hits the target.

[0037] Specifically, any target material can be selected for the X-ray metal target 5. It should be noted that due to the setting of the blocking component 4, even if a low-melting-point metal target material is selected for the X-ray metal target 5, there is no need to consider the problem that the low-melting-point metal target material is prone to sputtering. Thus, the material selection range of the X-ray metal target 5 is expanded.

[0038] For the X-ray source proposed by the present invention, by providing the blocking component 4 between the filament 1 and the X-ray metal target 5, due to the setting of the blocking component 4, the sputtering contaminants generated on the X-ray metal target 5 will be blocked by the blocking component 4 and will not be deposited on the filament 1, so the filament 1 will not be contaminated, thereby prolonging the service life of the cathode filament 1. And, if the thickness of the sputtering contaminants deposited on the blocking component 4 is large, resulting in a low transmittance of the electron beam, the blocking component 4 can be replaced at any time. Since the price of the blocking component 4 is low and the price of the filament is high, the cost of the expensive filament is indirectly reduced. In addition, it also prevents the metal vapor from condensing and depositing on the insulating surface of the measuring component in the vacuum system, ensuring the working stability of the insulating measuring component.

[0039] In addition, the main advantage of the X-ray source of the present invention is that the blocking component 4 between the filament 1 and the X-ray metal target 5 hardly attenuates the high-energy electron beam, and can block the sputtering impurity vapor generated at the X-ray metal target 5 from contaminating the filament, that is, the X-ray source can effectively prevent the impurities sputtered from the X-ray metal target 5 from contaminating the filament without reducing the intensity of the generated X-ray, and prolong the service life of the filament 1.

[0040] In some alternative embodiments, as Figure 2 shown, the blocking component 4 includes: a fixing component 8 and an electron beam penetration component 7;

[0041] The fixing component 8 is provided with a hollowed-out area, and the electron beam penetration component 7 is fixed in the hollowed-out area.

[0042] Specifically, the fixing component 8 is used to fix the electron beam penetration component 7. After the electron beam 3 emitted by the filament 1 penetrates the electron beam penetration component 7 in the hollow area, it is transmitted to the X-ray metal target 5 and output as the X-ray 6 generated after the electron beam hits the target. The electron beam penetration component 7 can penetrate the electron beam, but can block the sputtering contaminants generated on the X-ray metal target 5 and prevent the sputtering contaminants from depositing on the filament 1, thereby contaminating the filament 1. Furthermore, the lifespan of the filament 1 can be extended. Optionally, the electron beam penetration component 7 is a component that can penetrate the electron beam and block the sputtering contaminants generated on the X-ray metal target 5.

[0043] In some alternative embodiments, as Figure 1 shown, the fixing component 8 is fixedly connected to the X-ray metal target 5; or,

[0044] The X-ray source further includes: a structure outside the filament 2;

[0045] The fixing component 8 is fixedly connected to the structure outside the filament 2.

[0046] Specifically, the electron beam penetration component 7 is in a suspended state relative to the filament 1 and the X-ray metal target 5. When the fixing component 8 is fixed, it is fixed on the structure outside the filament 2 or the X-ray metal target 5, and can be specifically fixed by adhesion or screw connection.

[0047] Referring to Figure 1 , the structure outside the filament 2 is a concave structure, and the fixing component 8 is fixed at the edge area of the concave structure or can also be fixed in the recessed area of the structure outside the filament 2. Referring to Figure 1 , the X-ray metal target 5 is not parallel to the filament 1. It should be noted that the electron beam penetration component 7 can be parallel to the filament or parallel to the receiving surface of the X-ray metal target 5.

[0048] In some alternative embodiments, as Figure 2 shown, the electron beam penetration component 7 is adhered to the hollow area, or the electron beam penetration component 7 is clamped in the hollow area.

[0049] Specifically, the area of the electron beam penetration component 7 is larger than the hollow area of the fixing component 8. At this time, the edge of the electron beam penetration component 7 can be adhered to the hollow area, or can be fixed in the hollow area based on mechanical means such as screws. The electron beam penetration component 7 can also be clamped in the hollow area of the fixing component 8. Optionally, the electron beam penetration component 7 can also be fixed in the hollow area of the fixing component 8 by other fixing methods, which are not limited here.

[0050] In some alternative embodiments, as Figure 2 shown, the fixing component 8 includes: a fixing plate and a support member;

[0051] The fixed plate is connected to the support member, and the fixed plate is provided with a hollowed-out area;

[0052] The support member is connected to the outer structure 2 of the filament, or the support member is connected to the X-ray metal target 5.

[0053] Specifically, referring to Figure 2 , the fixed plate is used to fix the electron beam penetration component 7, and the support member is used to space the electron beam penetration component 7 from the filament 1 and the X-ray metal target 5 respectively. Optionally, referring to Figure 2 , the support member can be a support column, or the support member can also be a U-shaped support frame, or can also be a tripod, etc., which is not limited herein. The materials of the fixed plate and the support member can be metal.

[0054] It should be noted that, referring to Figure 2 , the fixing component 8 includes: a fixed plate and four support columns. The fixed plate is rectangular, and the tops of the four support columns are respectively arranged at the four corners of the fixed plate. The lower ends of the four support columns are connected to the outer structure 2 of the filament, or the lower ends of the four support columns are connected to the X-ray metal target 5. It should be understood that whether the support member is connected to the outer structure 2 of the filament or the support member is connected to the X-ray metal target 5, the surface of the electron beam penetration component 7 where the incident electron beam arrives is used as the incident surface of the electron beam penetration component 7. That is, when the support member is connected to the X-ray metal target 5, the surface of the fixed plate without the support member is used as the incident surface of the electron beam penetration component 7. When the support member is connected to the outer structure 2 of the filament, the surface of the fixed plate with the support member is used as the incident surface of the electron beam penetration component 7.

[0055] In order to make the electron beam penetration component 7 parallel to the filament 1, the four support columns can be set to different lengths, that is, specifically, the lengths of two of the four support columns are set to be slightly longer, and the lengths of the remaining two support columns are set to be slightly shorter. Of course, the four support columns can be set to the same length, so that the electron beam penetration component 7 is parallel to the X-ray metal target 5. The specific angle of the electron beam penetration component 7 is not limited herein and is changed according to actual applications.

[0056] In some optional embodiments, as Figure 2 shown, the fixed plate is provided with one or more hollowed-out areas.

[0057] Specifically, referring to Figure 2 , Figure 2Schematic diagram of a fixing plate provided with a single hollow area. The fixing plate can also be provided with multiple hollow areas, and an electron beam penetration component 7 is provided on each hollow area. Optionally, according to the range of the condensed deposition metal vapor generated by the X-ray metal target, the specific number of hollow areas is set. If the range of the condensed deposition metal vapor generated by the X-ray metal target is wide, multiple hollow areas can be set; if the range of the condensed deposition metal vapor generated by the X-ray metal target is narrow, a single hollow area can be set.

[0058] In some alternative embodiments, such as Figure 3 shown, the electron beam penetration component 7 includes a base member 11 and a thin film member 10. The thin film member 10 is disposed on the window structure of the base member 11, and the window structure includes a single window structure or a multi-window structure.

[0059] Specifically, the thin film member 10 is used to penetrate the electron beam. The thin film member 10 is disposed on the base member 11, and the base member 11 can specifically be a silicon substrate. The manner of disposing the thin film member 10 on the silicon substrate is not limited.

[0060] Optionally, referring to Figure 3 , the base member 11 can be a single window structure. After growing the thin film member 10 on the base member 11, the base member 11 at the single window position is etched away or removed by other means, and only the thin film member 10 is in the window. The electron beam passes through the thin film member 10 on the window. Of course, the single window structure can also be, as shown in Figure 3 shown, with the base member 11 only disposed around the thin film member 10.

[0061] Specifically, the window structure also includes a multi-window structure (not shown in the figure). After growing the thin film member 10 on the base member 11, the base member 11 at the multi-window position is etched away or removed by other means. The multi-window structure can be used for a thin film with a larger electron incident area to achieve a supporting effect.

[0062] In some alternative embodiments, such as Figure 3 shown, a conductive layer 9 is disposed on the incident surface of the thin film member 10, and the thin film member 10 is made of silicon nitride.

[0063] Specifically, the thin film member 10 can be a non-conductive thin film, such as made of silicon nitride. At this time, a conductive layer 9 is deposited on the non-conductive thin film. Optionally, the conductive layer 9 can be deposited by a spraying process, and the conductive layer can be made of gold, platinum or carbon.

[0064] In some alternative embodiments, the area of the thin film member 10 is larger than the area of the electron beam incident on the position of the thin film member 10.

[0065] Specifically, the area of the thin film member 10 can be determined by the size of the electron beam spot emitted from the filament 1 reaching the thin film member 10, and specifically can be determined by the distance between the thin film member 10 and the filament 1 and the range of diffusion of the electron beam emitted from the filament 1.

[0066] In some alternative embodiments, the thickness of the thin film member 10 is determined according to the electron energy incident on the thin film member 10.

[0067] Specifically, the thickness of the thin film member 10 is determined according to the electron energy incident on the upper surface of the thin film member 10 to ensure that a certain proportion of high-energy electrons can pass through the conductive layer 9 and the thin film member 10. It should be noted that if the thickness of the thin film member 10 is too thin, there is a risk that the thin film member 10 will break.

[0068] In the X-ray source proposed by the present invention, a thin film structure is added between the filament 1 and the X-ray metal target 5. By designing the parameters of the thin film, including size, thickness, structure, etc., it can be ensured that the vast majority of the electron beams emitted from the filament 1 pass through the thin film and then hit the X-ray metal target 5. When the impurity vapor generated at the X-ray metal target 5 diffuses and deposits around, it will be blocked by the thin film, and the filament will not be contaminated. If the thickness of the thin film of the X-ray metal target 5 material deposited on the thin film is large and affects the transmission of the electron beam, the thin film can be replaced. The thin film is inexpensive, thus extending the service life of the expensive filament. In addition, it also prevents the metal vapor from condensing and depositing on the insulating surface of the measuring component in the vacuum system, ensuring the working stability of the insulating measuring component. In addition, the main advantage of the X-ray source of the present invention is that the blocking component 4 between the filament 1 and the X-ray metal target 5 hardly attenuates the high-energy electron beam and can block the sputtering impurity vapor generated at the X-ray metal target 5 from contaminating the filament. That is, the X-ray source can effectively prevent the impurities sputtered from the X-ray metal target 5 from contaminating the filament and extend the service life of the filament 1 while not reducing the intensity of the generated X-rays.

[0069] Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art can make various modifications and variations without departing from the spirit and scope of the present invention, and such modifications and variations all fall within the scope defined by the appended claims.

Claims

1. An X-ray source, characterized in that, The X-ray source includes: a filament, an X-ray metal target, and a blocking component; A blocking component is arranged between the filament and the X-ray metal target to prevent impurities generated by the X-ray metal target from contaminating the filament, wherein the blocking component penetrates the electron beam.

2. The X-ray source according to claim 1, characterized in that, The blocking component includes: a fixing component and an electron beam penetration component; The fixing component is provided with a hollowed-out area, and the electron beam penetration component is fixed in the hollowed-out area.

3. The X-ray source according to claim 2, characterized in that, The fixing component is fixedly connected to the X-ray metal target; or The X-ray source further includes: a structure outside the filament; The fixing component is fixedly connected to the structure outside the filament.

4. The X-ray source according to claim 2, wherein, The electron beam penetration component is adhered to the hollowed-out area, or the electron beam penetration component is stuck in the hollowed-out area.

5. The X-ray source according to claim 3, characterized in that, The fixing component includes: a fixing plate and a support member; The fixing plate is connected to the support member, and the fixing plate is provided with a hollowed-out area; The support member is connected to the structure outside the filament, or the support member is connected to the X-ray metal target.

6. The X-ray source according to claim 5, wherein, The fixing plate is provided with one or more hollowed-out areas.

7. The X-ray source according to claim 2, characterized in that, The electron beam penetration component includes a base member and a thin film member, the thin film member is arranged on a window structure of the base member, and the window structure includes a single-window structure and a multi-window structure.

8. The X-ray source according to claim 7, characterized in that, A conductive layer is arranged on an incident surface of the thin film member, and the thin film member is made of silicon nitride.

9. The X-ray source according to claim 7, wherein, The area of the thin film member is larger than the area of the electron beam incident on the position of the thin film member.

10. The X-ray source according to claim 7, characterized in that, Determine the thickness of the thin film member according to the electron energy incident on the thin film member.

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