Semiconductor device and airflow generating package

Abstract

The invention provides a semiconductor device and an airflow generating package. The airflow generating package includes a substrate, a cover structure and a film structure. The membrane structure is disposed between the substrate and the cover structure and includes a pair of flaps including a first flap and a second flap. The pair of lobes operates at an ultrasonic frequency such that the airflow generating enclosure generates an airflow. A first air opening is formed on the cover structure.

Description

Technical Field

[0001] The present invention relates to a semiconductor device and an air flow generating package, and more particularly to a semiconductor device and an air flow generating package having improved heat dissipation performance. Background Art

[0002] In today's society, the thermal management of a device significantly affects the performance of the components in the device, making the performance of the device highly related to its thermal management. For example, in an electronic device (such as a smart phone, a tablet computer, etc.), which is actually a kind of device, with the miniaturization of the electronic device and the increasing complexity of its operations, the electronic device will consume more battery power. Moreover, artificial intelligence (AI) operations require more complex operations. Therefore, thermal management is crucial for the efficiency of operations (such as AI operations). Accordingly, thermal management becomes increasingly important for the future viability of electronic devices (such as palm-sized electronic devices or servers in data centers).

[0003] Therefore, it is necessary to improve the thermal management (such as heat dissipation performance) of the device to improve the performance of the device. Summary of the Invention

[0004] Accordingly, a main object of the present invention is to provide an electronic device, in which the heat dissipation performance of the electronic device is improved based on the presence of an element for generating a plurality of air pulses. In addition, the present invention also provides a related air flow generating package. In addition, the present invention also provides a semiconductor device, which is the above-mentioned electronic device.

[0005] An embodiment of the present invention discloses an air flow generating package, which includes a substrate, a covering structure and a film structure. The film structure is disposed between the substrate and the covering structure and includes a pair of flaps, and the pair of flaps includes a first flap and a second flap. The pair of flaps operates at an ultrasonic frequency such that the air flow generating package generates an air flow. A first air opening is formed on the covering structure.

[0006] An embodiment of the present invention discloses a semiconductor device, which includes an operating element and an air flow generating wafer. The operating element generates heat during operation, and the air flow generating wafer is disposed above, below or beside the operating element and is used for generating an air flow to dissipate the heat generated by the operating element.

[0007] An embodiment of the present invention discloses an airflow generating package, which includes a fin-type heat conducting element, a first airflow generating wafer, and a second airflow generating wafer. The fin-type heat conducting element is disposed on a heat source. The first airflow generating wafer is disposed on a first side of the fin-type heat conducting element and is configured to generate an airflow and direct the airflow inward. The second airflow generating wafer is disposed on a second side of the fin-type heat conducting element and is configured to generate an airflow and direct the airflow outward. The airflow flows through the fin-type heat conducting element, and the airflow is used to dissipate the heat of the heat source.

[0008] After reading the detailed description of the embodiments with various drawings shown hereinafter, the purpose of the present invention should be clear to those skilled in the art. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 The cross-sectional schematic diagram of an airflow generating wafer according to an embodiment of the present invention is shown.

[0010] Figure 2 The cross-sectional schematic diagram of the common mode movement and differential mode movement of an airflow generating wafer according to an embodiment of the present invention is shown.

[0011] Figure 3 The cross-sectional schematic diagram of a semiconductor element with an airflow generating wafer according to an embodiment of the present invention is shown.

[0012] Figure 4 The cross-sectional schematic diagram of a semiconductor element with an airflow generating wafer according to another embodiment of the present invention is shown.

[0013] Figure 5 The cross-sectional schematic diagrams of four designs of an airflow generating package with an airflow generating wafer according to some embodiments of the present invention are shown.

[0014] Figure 6 The cross-sectional schematic diagram of an example of the fourth design of an airflow generating package with an airflow generating wafer according to the present invention is shown.

[0015] Figure 7 The cross-sectional schematic diagram of another example of the fourth design of an airflow generating package with an airflow generating wafer according to the present invention is shown.

[0016] Figure 8 The cross-sectional schematic diagrams of multiple examples of the second design of an airflow generating package with an airflow generating wafer according to the present invention are shown.

[0017] Figure 9 The cross-sectional schematic diagram of another example of the second design of an airflow generating package with an airflow generating wafer according to the present invention is shown.

[0018] Figure 10 Shown is a cross-sectional schematic diagram of another example of a second design of an airflow generating package having an airflow generating wafer in the present invention.

[0019] Figure 11 Shown is a cross-sectional schematic diagram of a device having a heat source and an airflow generating wafer in the first embodiment of the present invention.

[0020] Figure 12 Shown is a cross-sectional schematic diagram of a device having a heat source and an airflow generating wafer in the second embodiment of the present invention.

[0021] Figure 13 Shown is a cross-sectional schematic diagram of a device having a heat source and an airflow generating wafer in the third embodiment of the present invention.

[0022] Figure 14 Shown is a cross-sectional schematic diagram of a device having a heat source and an airflow generating wafer in the fourth embodiment of the present invention.

[0023] Figure 15 Shown is a cross-sectional schematic diagram of a device having a heat source and an airflow generating wafer in the fifth embodiment of the present invention.

[0024] Figure 16 Shown is a cross-sectional schematic diagram of a device having a heat source and an airflow generating wafer in the sixth embodiment of the present invention.

[0025] Figure 17 Shown is a cross-sectional schematic diagram of a device having a heat source and an airflow generating wafer in the seventh embodiment of the present invention.

[0026] Figure 18 Shown is a cross-sectional schematic diagram of a device having a heat source and an airflow generating wafer in the eighth embodiment of the present invention.

[0027] Figure 19 Shown is a cross-sectional schematic diagram of an example of a device having a heat source and an airflow generating wafer in the eighth embodiment of the present invention.

[0028] Figure 20 Shown is a cross-sectional schematic diagram of a device having a heat source and an airflow generating wafer in the ninth embodiment of the present invention.

[0029] Figure 21 Shown is a cross-sectional schematic diagram of a device having a heat source and an airflow generating wafer in the tenth embodiment of the present invention.

[0030] Figure 22 Shown is a cross-sectional schematic diagram of a device having a heat source and an airflow generating wafer in the eleventh embodiment of the present invention.

[0031] Figure 23The following is a schematic cross-sectional view of the device with a heat source and an air-flow generating wafer in the twelfth embodiment of the present invention.

[0032] Figure 24 The following is a schematic view of the device in an embodiment of the present invention.

[0033] Figure 25 The following is a schematic view of the device in an embodiment of the present invention.

[0034] Figure 26 The following is a schematic view of the device in an embodiment of the present invention.

[0035] Figure 27 The following is a schematic view of the device in an embodiment of the present invention.

[0036] Figure 28 The following is a schematic view of the design of the covering structure in some embodiments of the present invention.

[0037] Among them, the reference numerals are explained as follows:

[0038] 100, 200, 300, 400, 500, 600, 700, 800, 800’, 900, 1000, 1100, 1110, 1200, 1300, DV: Device

[0039] 110: Heat source

[0040] 120: Heat conducting element

[0041] 120’: Fin-type heat conducting element

[0042] 121: Heat sink

[0043] 122: Space

[0044] 130: Outer shell

[0045] 132: First shell opening

[0046] 134: Second shell opening

[0047] 140: Spacer

[0048] 710: Plate body

[0049] 802: First device opening

[0050] 804: Second device opening

[0051] 806, 806’, AL: Air channel

[0052] 1400, 1500: Semiconductor device

[0053] 1600, CSV, CSV1, CSV2: Covering structure

[0054] AFC, AFC1, AFC2, AFC3, AFC4: Airflow Generating Chip

[0055] AR: Anchoring Structure

[0056] AT: Actuator

[0057] AT1: First Actuating Portion

[0058] AT2: Second Actuating Portion

[0059] BSP, BSP1, BSP2, BSS: Substrate

[0060] BSPw, CSVw: Side Wall

[0061] CB: Conductive Ball

[0062] CHB: Cavity

[0063] CM: Connection Structure

[0064] CP, CP1, CP2, CP3, CP4: Chip

[0065] CSVt: Top

[0066] CV: Conductive Structure

[0067] CY1, CY1_1, CY1_2, CY1_3, CY1_4: First Cavity

[0068] CY2, CY2_1, CY2_2: Second Cavity

[0069] DS1: First Design

[0070] DS2: Second Design

[0071] DS3: Third Design

[0072] DS4: Fourth Design

[0073] DSN1, DSN2: Design

[0074] EP: Empty Structure

[0075] FL: Flap

[0076] FL1: First Flap

[0077] FL2: Second Flap

[0078] FP: Flap Pair

[0079] FS: Membrane Structure

[0080] GP: Gap

[0081] ITP: Intermediate layer

[0082] OPP, OPP1, OPP2: Air openings

[0083] OPS1: First air opening

[0084] OPS2: Second air opening

[0085] OPV: Ventilation opening

[0086] PG, PG1, PG2, PG3, PG3’, PG4, PG5: Airflow generating packages

[0087] PH: Package housing

[0088] PU1, PU2: Package units

[0089] S1: Intermediate state

[0090] S2: Common - mode motion

[0091] S3: Differential - mode motion

[0092] SC, SC1, SC2: Semiconductor components

[0093] SF: Surface

[0094] SL: Slit

[0095] TP: Heat dissipation structure

[0096] TPP: Protrusion

[0097] X, Y, Z: Directions Detailed implementation manners

[0098] To enable those skilled in the art to further understand the present invention, the following will detail the preferred embodiments of the present invention, the typical materials or parameter ranges of key components, and illustrate the composition and the technical effects to be achieved of the present invention in conjunction with the marked drawings. It should be noted that the drawings are all simplified schematic diagrams, and based on the current technology, the material and parameter ranges of key components are illustrated. Therefore, only the components and combination relationships related to the present invention are shown to provide a clearer description of the basic architecture, implementation method, or operation of the present invention. The actual components and layouts may be more complex, and the material or parameter ranges used may change with the development of future technologies. Additionally, for the convenience of description, the components shown in the various drawings of the present invention may not be drawn in proportion to the actual number, shape, and size, and the details can be adjusted according to the design requirements.

[0099] In the following specification and claims, words such as "comprising", "containing", "having" and the like are open-ended terms, and thus should be construed to mean "including but not limited to...". Therefore, when the terms "comprising", "containing" and / or "having" are used in the description of the present invention, they specify the presence of the corresponding features, regions, steps, operations and / or components, but do not exclude the presence of one or more corresponding features, regions, steps, operations and / or components.

[0100] In the following specification and claims, when a component or film layer is referred to as "connected to" another component or film layer, it may be directly connected to this other component or film layer, or there may be an intervening component or film layer between the two. When a component is referred to as "directly connected to" another component or film layer, there is no intervening component or film layer between the two.

[0101] In the following specification and claims, when "component A1 is formed by B1", B1 is present in the formation of component A1 or B1 is used in the formation of component A1, and the presence and use of one or more other features, regions, steps, operations and / or components are not excluded in the formation of component A1.

[0102] In the following specification and claims, the term "cavity" refers to an object having an empty space inside it. In the following specification and claims, the term "hollow cavity" refers to the empty space within an object. For example, the hollow cavity of a cavity is the empty space existing within the cavity, and the cavity is the outer shell of this hollow cavity.

[0103] In the following specification and claims, the term "substantially" means that there may or may not be a minor deviation. For example, the terms "substantially parallel", "substantially along" mean that the angle between two components may be less than or equal to a specific angle threshold, such as 10 degrees, 5 degrees, 3 degrees or 1 degree. For example, the term "substantially aligned" means that the deviation between two components may be less than or equal to a specific difference threshold, such as 2 μm (micrometers) or 1 μm. For example, the term "substantially the same" means that the deviation is within a given value or a given range, such as within 10%, 5%, 3%, 2%, 1% or 0.5%.

[0104] In the following description and claims, the term "horizontal direction" refers to a direction parallel to the horizontal plane, the term "horizontal plane" refers to a plane parallel to directions X and Y in the drawings (i.e., directions X and Y of the present invention can be regarded as the horizontal direction), the terms "vertical direction" and "top view direction" refer to directions parallel to direction Z and perpendicular to the horizontal direction in the drawings, where directions X, Y, and Z are perpendicular to each other. In the following description and claims, the term "top view" refers to the viewing result along the vertical direction. In the following description and claims, the term "side view" refers to the viewing result along the horizontal direction. In the following description and claims, the term "cross-section" refers to the viewing result of a structure cut along the vertical direction and viewed from the horizontal direction.

[0105] The ordinal numbers used in the description and claims, such as "first", "second", etc., are used to modify elements. They do not themselves imply or represent any previous ordinal numbers of the element (or these elements), nor do they represent the order of one element and another element, or the order in the manufacturing method. The use of these ordinal numbers is only to clearly distinguish an element with a certain name from another element with the same name. The same terms may not be used in the claims and the description. Accordingly, the first component in the description may be the second component in the claims.

[0106] It should be noted that in the following embodiments, without departing from the concept of the present invention, the features in several different embodiments can be replaced, recombined, and mixed to complete other embodiments. As long as the features between the embodiments do not violate the inventive concept or conflict with each other, they can be arbitrarily mixed and used.

[0107] In the present invention, the airflow generating element is used to generate airflow, and heat dissipation can be achieved and / or improved through the airflow generated by the airflow generating element. In the present invention, the airflow generating element can be designed according to requirements, and the airflow generating element can be formed by any suitable method. In the following, some embodiments of the airflow generating element will be described.

[0108] For example, the airflow generating element can be an airflow generating wafer, and the airflow generating wafer can be formed by a semiconductor process. For example, the airflow generating wafer can be a micro electro mechanical system (MEMS) wafer and include MEMS structures, but it is not limited thereto.

[0109] Please refer to Figure 1 and Figure 2 , Figure 1 which shows a cross-sectional schematic diagram of an airflow generating wafer according to an embodiment of the present invention, Figure 2 which shows a cross-sectional schematic diagram of the common-mode motion and differential-mode motion of an airflow generating wafer according to an embodiment of the present invention, where Figure 1The airflow generating wafer AFC is shown in an intermediate state S1. Figure 1 and Figure 2 As shown, the airflow generating chip AFC is used to generate airflow. In some embodiments, the airflow generating chip AFC can be used to generate a plurality of air pulses, and the airflow can be composed of air pulses, wherein the airflow generating chip AFC can generate air pulses at any suitable pulse rate. For example, the airflow generating chip AFC can generate air pulses at an ultrasonic frequency (ultrasonic pulse rate) higher than the maximum audible frequency of humans (e.g., 16 kHz, 20 kHz, or 22 kHz), so that the user cannot hear the operation of the airflow generating chip AFC used to generate the airflow and / or air pulses, but the present invention is not limited thereto.

[0110] like Figure 1 As shown, the airflow generating chip AFC may include at least one anchoring structure AR and at least one membrane structure FS, wherein the membrane structure FS is anchored on the anchoring structure AR, wherein the anchoring structure AR may be arranged on the outside of the membrane structure FS. The membrane structure FS and the anchoring structure AR may include any suitable material. In some embodiments, the membrane structure FS and the anchoring structure AR may each include silicon (e.g., single crystal silicon or polycrystalline silicon), silicon compounds (e.g., silicon carbide, silicon oxide), germanium, germanium compounds, gallium, gallium compounds (e.g., gallium nitride, gallium arsenide), other suitable materials or combinations thereof, but are not limited thereto. In some embodiments, the membrane structure FS and the anchoring structure AR may have the same material.

[0111] During the operation of the airflow generating chip AFC, the membrane structure FS can be actuated to move, and the anchoring structure AR can be fixed. In other words, during the operation of the airflow generating chip AFC, the anchoring structure AR can be a fixed end (or a fixed edge) relative to the membrane structure FS. In some embodiments, the membrane structure FS can be actuated to move upward and downward, but is not limited to this. In the present invention, the terms "upward movement" and "downward movement" mean that the membrane structure FS substantially moves along the direction Z. In addition, "upward" can refer to the direction Z (i.e., the +Z direction), and "downward" can refer to the direction opposite to the direction Z (i.e., the -Z direction). In other words, the actuation direction of the membrane structure FS is parallel to the direction Z.

[0112] like Figure 1 As shown, the membrane structure FS of the airflow generating chip AFC includes at least one slit SL, and the membrane structure FS is divided into a plurality of petals FL by the slit SL (that is, the petals FL can be separated from each other by the slit SL, and the slit SL can be the boundary of the petals FL), wherein the number of petals FL can be designed according to requirements. Figure 1As shown, the membrane structure FS can be separated into a first flap FL1 and a second flap FL2 through a slit SL. The first flap FL1 and the second flap FL2 can be arranged opposite to each other, and at least one slit SL can be between the first flap FL1 and the second flap FL2. It should be noted that the first flap FL1 and the second flap FL2 opposite to each other can form a flap pair FP in the membrane structure FS.

[0113] In Figure 1 , the flap FL of the membrane structure FS has at least one anchoring edge (or anchoring end) and at least one free edge (free end). The anchoring edge is anchored on the anchoring structure AR, and the free edge is not permanently anchored on any element in the air flow generating wafer AFC. The anchoring edge and the free edge of each flap FL can be designed according to requirements. For example (as Figure 1 shown), the slit SL can define a free edge of the first flap FL1 and a free edge of the second flap FL2. This free edge of the first flap FL1 can be relative to the anchoring edge of the first flap FL1, and this free edge of the second flap FL2 can be relative to the anchoring edge of the second flap FL2, but not limited thereto.

[0114] In the present invention, the number of slits SL included in the membrane structure FS can be adjusted according to requirements, and the slit SL can be arranged at any suitable position in the membrane structure FS and have any suitable top view pattern. For example, the slit SL can be a straight slit, a curved slit, a combination of straight slits, a combination of curved slits, or a combination of straight slits and curved slits.

[0115] The air flow generating wafer AFC can include an actuator AT for actuating the membrane structure FS to generate an air flow and / or an air pulse. The actuator AT can be arranged at any suitable position, and the position of the actuator AT can be related to the actuation mode of the actuator AT. For example, in Figure 1 , the actuator AT can overlap the membrane structure FS in the Z direction, but not limited thereto. For example, in Figure 1 , the actuator AT can be arranged on the membrane structure FS, but not limited thereto. For example, in Figure 1 , the actuator AT can contact the membrane structure FS, but not limited thereto.

[0116] As Figure 1 shown, the actuator AT can include a plurality of actuating parts arranged on a plurality of flaps FL of the membrane structure FS. For example (as Figure 1 shown), the actuator AT includes a first actuating part AT1 arranged on the first flap FL1 and a second actuating part AT2 arranged on the second flap FL2.

[0117] The actuator AT has a monotonic electromechanical conversion function for the movement of the membrane structure FS in the direction Z. In some embodiments, the actuator AT may include a piezoelectric actuator, an electrostatic actuator, a nanoscopic - electrostatic - drive (NED) actuator, an electromagnetic actuator, or any other suitable actuator, but is not limited thereto. For example, in one embodiment, the actuator AT may include a piezoelectric actuator. The piezoelectric actuator may include, for example, two electrodes and a piezoelectric material layer disposed between the two electrodes (e.g., lead zirconate titanate (PZT)), where the piezoelectric material layer can actuate the membrane structure FS according to the drive signal received by the electrodes (e.g., drive voltage and / or drive voltage difference between the two electrodes), but is not limited thereto. For example, in another embodiment, the actuator AT may include an electromagnetic actuator (e.g., a planar coil), where the electromagnetic actuator can actuate the membrane structure FS according to the drive signal received (e.g., drive current) and the magnetic field (i.e., the membrane structure FS can be actuated by electromagnetic force), but is not limited thereto. For example, in another embodiment, the actuator AT may include an electrostatic actuator (e.g., a conductive plate) or an NED actuator, where the electrostatic actuator or the NED actuator can actuate the membrane structure FS according to the drive signal received (e.g., drive voltage) and the electric field (i.e., the membrane structure FS can be actuated by electrostatic force), but is not limited thereto. Hereinafter, the actuator AT may be, for example, a piezoelectric actuator.

[0118] For example, if the air - flow - generating wafer AFC is a MEMS wafer, the membrane structure FS, the anchoring structure AR, and the actuator AT may be MEMS structures in the MEMS wafer, but are not limited thereto. Additionally, since the air - flow - generating wafer AFC can generate an air flow and / or an air pulse by actuating the membrane structure FS with the actuator AT, the air - flow - generating wafer AFC may be a bladeless fan, but is not limited thereto.

[0119] In the present invention, the membrane structure FS (flap FL) can be actuated / controlled by an actuator AT to move upward or downward, such that an air ventilation opening OPV related to a slit SL is formed / opened or closed (i.e., the membrane structure FS is used to form / open the air ventilation opening OPV or close the air ventilation opening OPV), wherein the air ventilation opening OPV is formed between two opposite sidewalls of the slit SL (i.e., the air ventilation opening OPV is formed between a first flap FL1 and a second flap FL2). In other words, the air ventilation opening OPV is formed because of the slit SL. In the case of "the air ventilation opening OPV is closed / sealed", it is difficult for air to pass through the space between two opposite sidewalls of the slit SL, which means that the flow resistance of the air ventilation opening OPV is relatively large or greater than a threshold value. In the case of "the air ventilation opening OPV is formed / opened", air can easily pass through the space between two opposite sidewalls of the slit SL, which means that the flow resistance of the air ventilation opening OPV is relatively small or less than another threshold value.

[0120] In the present invention, an air flow generating wafer AFC can generate an air flow and / or an air pulse by any suitable air flow generating means. For example, Figure 1 Regarding Figure 2 the air flow generating means will be described below, and this air flow generating means can generate an air flow and / or an air pulse by changing the state of the air ventilation opening OPV and the air pressure on two opposite sides of the membrane structure FS.

[0121] As Figure 1 shown, in an intermediate state S1 of the air flow generating wafer AFC, the membrane structure FS (flap pair FP) can be actuated and maintained at a first position that is substantially horizontal (in cross-section) to temporarily close (or even temporarily seal) the air ventilation opening OPV, such that it is difficult for air to pass through the space between two opposite sidewalls of the slit SL. In Figure 1 this case, two opposite sidewalls of the slit SL (i.e., the free edges of the first flap FL1 and the free edges of the second flap FL2) partially overlap or completely overlap with each other in the horizontal direction (such as the gap GP of the slit SL shown in Figure 1 ), so as to close the air ventilation opening OPV and have a relatively large flow resistance.

[0122] In Figure 1In this case, since the size of the gap GP of the slit SL (or the width of the slit SL) should be small enough, due to the viscous forces / resistance along the walls of the gas flow path (which can be referred to as the in-field boundary layer effect of fluid mechanics), the gas flow through the gap GP (i.e., the narrow channel) can be highly damped. Therefore, in the intermediate state S1, the gas flow through the gap GP is small enough and can be ignored. In other words, when the wafer AFC is in the intermediate state S1 and the gas flow is generated, the ventilation opening OPV is closed or even sealed. The size of the gap GP of the slit SL (or the width of the slit SL) can be designed according to requirements. For example, the size of the gap GP of the slit SL (or the width of the slit SL) can be less than or equal to 5 micrometers (μm), less than or equal to 3 micrometers, less than or equal to 2 micrometers, or between 1 micrometer and 2 micrometers, but not limited thereto. It should be noted that the size of the ventilation opening OPV in the intermediate state S1 can be the same as the size of the gap GP.

[0123] In Figure 2 this case, the membrane structure FS (flap pair FP) can be actuated to perform a common-mode motion S2, such that the first flap FL1 and the second flap FL2 are simultaneously actuated in the same direction. For example, the first flap FL1 and the second flap FL2 can be simultaneously actuated to move upward or downward along the direction Z. For example, at the end of the common-mode motion S2, the distance between the first flap FL1 and the first position is the same as the distance between the second flap FL2 and the first position.

[0124] As Figure 2 shown, when the membrane structure FS (flap pair FP) is actuated to perform a common-mode motion S2, the ventilation opening OPV can be temporarily closed (or even temporarily sealed), making it difficult for air to pass through the space between the two opposite sidewalls of the slit SL. In Figure 2 this case, the two opposite sidewalls of the slit SL (i.e., the free edges of the first flap FL1 and the second flap FL2) partially overlap or completely overlap each other in the horizontal direction, so that the ventilation opening OPV is closed and has a large flow resistance.

[0125] When the membrane structure FS (flap pair FP) is actuated to perform a common-mode motion S2, since the ventilation opening OPV is temporarily closed and has a large flow resistance, the air pressures on the two opposite sides of the membrane structure FS will be different, resulting in a pressure difference. In other words, the membrane structure FS (flap pair FP) performs a common-mode motion S2 to form a pressure change.

[0126] In Figure 2In it, the membrane structure FS (flap pair FP) can be actuated to perform a differential-mode movement S3 such that the first flap FL1 and the second flap FL2 are simultaneously actuated in opposite directions. For example, the first flap FL1 can be actuated to move downward and the second flap FL2 can be actuated to move upward (as Figure 2 shown), or the first flap FL1 can be actuated to move upward and the second flap FL2 can be actuated to move downward. For example, at the end of the differential-mode movement S3, the distance between the first flap FL1 and the first position is the same as the distance between the second flap FL2 and the first position.

[0127] As Figure 2 shown, when the membrane structure FS (flap pair FP) is actuated to perform the differential-mode movement S3, the ventilation opening OPV can be temporarily opened so that air can easily pass through the space between the two opposite sidewalls of the slit SL. In Figure 2 it, the two opposite sidewalls of the slit SL (i.e., the free edges of the first flap FL1 and the second flap FL2) do not overlap with each other in the horizontal direction so that the ventilation opening OPV is opened with a small flow resistance.

[0128] When the membrane structure FS (flap pair FP) is actuated to perform the differential-mode movement S3, if there is a pressure difference between the two opposite sides of the membrane structure FS, air will naturally flow through the ventilation opening OPV based on this pressure difference and the small flow resistance of the ventilation opening OPV, so that an air flow and / or an air pulse can be generated.

[0129] Accordingly, the air flow generation method of this embodiment can generate an air flow and / or an air pulse by actuating the membrane structure FS (flap pair FP) to perform the common-mode movement S2 and the differential-mode movement S3. For example, a time period of the air flow generation method of this embodiment can include four steps, but is not limited thereto. The first step of the air flow generation method can actuate the membrane structure FS (flap pair FP) to perform the common-mode movement S2 so that a pressure difference exists between the two opposite sides of the membrane structure FS. The second step of the air flow generation method can actuate the membrane structure FS (flap pair FP) to return to the intermediate state S1. The third step of the air flow generation method can actuate the membrane structure FS (flap pair FP) to perform the differential-mode movement S3 so that air naturally flows through the ventilation opening OPV based on this pressure difference and the small flow resistance of the ventilation opening OPV, thereby generating an air flow and / or an air pulse. The fourth step of the air flow generation method can actuate the membrane structure FS (flap pair FP) to return to the intermediate state S1. By repeating the time period of the air flow generation method of this embodiment, air pulses can continuously form an air flow.

[0130] The frequency of the above time period can be designed according to the pulse rate of the air pulse, and the frequency of the time period can be synchronized with the pulse rate of the air pulse. In the present invention, for one frequency / ratio to be synchronized with another frequency / ratio means that this frequency / ratio is the other frequency / ratio multiplied by a rational number (i.e., N / M, where N and M represent integers). In some embodiments, the frequency of this time period can be the same as the pulse rate of the air pulse. In some embodiments, the membrane structure FS (flap pair FP) performs a common-mode motion S2 to form an air pressure change at a pressure change frequency synchronized with the frequency of this time period, and the membrane structure FS (flap pair FP) performs a differential-mode motion S3 to form a ventilation opening OPV at an opening frequency synchronized with the frequency of this time period and the pressure change frequency. For example, the frequency of this time period, the pulse rate of the air pulse, the pressure change frequency, and the opening frequency can be the same as each other. For example, if the air flow generating wafer AFC generates air pulses at an ultrasonic frequency, the pressure change frequency and the opening frequency are synchronized with this ultrasonic frequency.

[0131] The flow direction of the air flow and the flow direction of the air pulse can be determined by the direction of the common-mode motion S2 performed by the membrane structure FS (flap pair FP). When the membrane structure FS (flap pair FP) is actuated to move upward (or downward) to perform only one type of common-mode motion S2 in the first step of a plurality of time periods, the types of air pressure differences in the first step of these time periods are the same as each other, thereby making the flow directions of the air pulses generated in these time periods (the third step) the same. Therefore, the air flow generating wafer AFC can generate single-ended (SE) air pulses or quasi-single-ended air pulses. And, the air pulses are asymmetric.

[0132] In the present invention, the waveform of the single-ended air pulse or the waveform of the quasi-single-ended air pulse can mean that the waveform is (substantially) unipolar with respect to a certain level. For example, the single-ended air pulse or the quasi-single-ended air pulse can mean that the waveform is (substantially) unipolar with respect to the ambient pressure (such as 1 ATM). In other words, the single-ended air pulse or the quasi-single-ended air pulse constitutes a net air movement or a net air flow in a single direction.

[0133] The air flow generating method of the present invention is not limited to the above content. In a time period of the air flow generating method, the number of steps and the order of the actuation motions of the membrane structure FS (flap pair FP) can be designed according to requirements.

[0134] In another view, for any common-mode motion S2 of the flap pair FP, a pair of acoustic pressure waves is generated, one in the space on one side of the membrane structure FS and the other in the space on the opposite side of the membrane structure FS, and these two acoustic pressure waves have the same amplitude magnitude but opposite polarities. Therefore, when the ventilation opening OPV is opened, the air pressure difference between the two air masses near the ventilation opening OPV will cancel each other out. Accordingly, when the timing at which the differential-mode motion S3 reaches its peak (i.e., the timing at which the ventilation opening OPV reaches its maximum opening) aligns with the timing at which the acceleration of the common-mode motion S2 reaches its peak, it is expected that the acoustic pressure generated by the common-mode motion S2 should be suppressed or eliminated due to the opening of the ventilation opening OPV, resulting in an automatic neutralization between the two acoustic pressures on the two opposite sides of the membrane structure FS, where these two acoustic pressures have the same magnitude but opposite polarities. This means that when the ventilation opening OPV is opened, the air-flow generating wafer AFC will generate (near) net-zero air pressure. Therefore, when the opening period of the ventilation opening OPV overlaps with the period of one of the (two) polarities of the acceleration of the common-mode motion S2 of the flap pair FP, the air-flow generating wafer AFC will generate a single-ended air pulse or a quasi-single-ended air pulse.

[0135] Additionally, by aligning the opening timing of the ventilation opening OPV with the timing of the acceleration of the common-mode motion S2 of the flap pair FP, the air-flow generating wafer AFC can generate an asymmetric air pulse.

[0136] In some embodiments, the membrane structure FS (flap pair FP) can be actuated to simultaneously perform the common-mode motion S2 and the differential-mode motion S3, but not limited thereto. In some embodiments, the membrane structure FS can include other parts to enable the common-mode motion S2 and the differential-mode motion S3 to be simultaneously performed by the membrane structure FS, but not limited thereto.

[0137] In the present invention, the actuator AT can receive any suitable signal to actuate the membrane structure FS. In some embodiments, the membrane structure FS is actuated by modulating a driving signal (modulation-driving signal) SM to perform the common-mode motion S2 to form a pressure change, and the membrane structure FS is actuated by demodulating a driving signal (demodulation-driving signal) SV to perform the differential-mode motion S3 to form the ventilation opening OPV, where both the modulation driving signal SM and the demodulation driving signal SV are related to the output amplitude of the air pulse.

[0138] In addition, the modulation frequency of the modulation drive signal SM and the demodulation frequency of the demodulation drive signal SV may be related to the pulse rate of the air pulse. For example, the modulation frequency and the demodulation frequency may be synchronized with the pulse rate of the air pulse, such that the modulation frequency and the demodulation frequency may be synchronized with the pressure change frequency of the air pressure change, the opening frequency of the ventilation opening OPV, and the frequency of the aforementioned time period, but not limited thereto.

[0139] In some embodiments, the actuator AT may receive the modulation drive signal SM and the demodulation drive signal SV at different times, but not limited thereto. In some embodiments, the actuator AT may include a plurality of sub-parts in a top view, one sub-part may receive the modulation drive signal SM, and another sub-part may receive the demodulation drive signal SV, but not limited thereto. In some embodiments, the actuator AT may include a first electrode and a second electrode, the first electrode may receive the modulation drive signal SM, and the second electrode may receive the demodulation drive signal SV, but not limited thereto.

[0140] In addition, by controlling the modulation drive signal SM and / or the demodulation drive signal SV, the flow direction of the air flow (air pulse) generated by the air flow generating wafer AFC may be reversible. For details, reference may be made to U.S. Patent Application No. 18 / 624,105 filed by the same applicant. For the sake of brevity, it will not be described herein.

[0141] Details of the air flow generating MEMS device (i.e., the air flow generating wafer AFC) manufactured by semiconductor processes (such as structure, drive signal, and movement) and its design / operation principle may be referred to U.S. Patent No. 11,943,585, U.S. Patent Application No. 18 / 321,757, and U.S. Patent Application No. 18 / 624,105 filed by the same applicant. Therefore, these U.S. patents and U.S. patent applications are incorporated herein by reference.

[0142] In some embodiments of the present invention, the air flow generating element may be the above-mentioned air flow generating wafer AFC, or the air flow generating element may be an element including the above-mentioned air flow generating wafer AFC. For example, the air flow generating element may be a semiconductor element having the above-mentioned air flow generating wafer AFC, an air flow generating package having the above-mentioned air flow generating wafer AFC, or other elements having the above-mentioned air flow generating wafer AFC, but not limited thereto. Some embodiments of the semiconductor element SC having the above-mentioned air flow generating wafer AFC are illustrated in Figure 3 and Figure 4 Some embodiments of the air flow generating package PG having the above-mentioned air flow generating wafer AFC are illustrated in Figures 5 to 10 , but the semiconductor element and the air flow generating package are not limited to the following embodiments.

[0143] In other words, the air flow generating wafer AFC can be applied to the present application or various embodiments described below (e.g., air flow generating packages, semiconductor devices, electronic devices), and the features and characteristics of the air flow generating wafer AFC are included in the embodiments of the present application. It should be noted that a semiconductor device is a type of electronic device, and the semiconductor device can be or include a semiconductor element having the above-mentioned air flow generating wafer AFC, or the semiconductor device can be or include an air flow generating package having the above-mentioned air flow generating wafer AFC.

[0144] Please refer to Figure 3 , Figure 3 FIG. shows a cross-sectional schematic view of a semiconductor element having an air flow generating wafer in an embodiment of the present invention. As Figure 3 shown, the semiconductor element SC1 including the above-mentioned air flow generating wafer AFC can be formed by a semiconductor process. For example, the semiconductor element SC1 can be a 2.5-dimensional (2.5D) integrated circuit or a three-dimensional (3D) integrated circuit (e.g., Figure 3 the semiconductor element SC1 shown is a 2.5D integrated circuit), but not limited thereto. For example, the semiconductor device including the semiconductor element SC1 can be a 2.5D semiconductor package, a 3D semiconductor package, or a chip-on-wafer-on-substrate (CoWoS) package, or the semiconductor device including the semiconductor element SC1 can be disposed within a 2.5D semiconductor package, a 3D semiconductor package, or a CoWoS package.

[0145] In Figure 3 the semiconductor element SC1 shown, the air flow generating wafer AFC can be disposed on the substrate BSS of the semiconductor element SC1, where the substrate BSS of the semiconductor element SC1 can be a wafer or an interposer (e.g., a wafer layer). For example, the substrate BSS can include silicon, germanium, any other suitable semiconductor material, or a combination thereof. In Figure 3 , the substrate BSS can be an interposer (e.g., a silicon interposer), and a conductive structure CV (e.g., a through silicon via (TSV)) is disposed in the substrate BSS, and the conductive structure CV is used to electrically connect between two electronic components respectively disposed on two opposite sides of the substrate BSS, but not limited thereto.

[0146] In Figure 3 , the substrate BSS can have an upper surface parallel to directions X and Y (i.e., the upper surface of the substrate BSS can be a horizontal plane), and the normal direction of the upper surface of the substrate BSS can be parallel to direction Z.

[0147] The semiconductor component SC1 may further include at least one wafer CP, disposed on the substrate BSS and adjacent to the air flow generating wafer AFC. In Figure 3 , the semiconductor component SC1 may include four wafers CP1, CP2, CP3, CP4. The wafers CP1 and CP3 may be disposed on the substrate BSS. The wafer CP2 may be disposed (stacked) on the wafer CP1 and electrically connected to the wafer CP1 through at least one connection structure CM (such as solder or conductive balls). The wafer CP4 may be disposed (stacked) on the wafer CP3 and electrically connected to the wafer CP3 through at least one connection structure CM (such as solder or conductive balls), but not limited thereto. It should be noted that the air flow generating wafer AFC can be used to dissipate the heat generated by the wafer CP. It should be noted that this connection structure CM (such as solder or conductive balls) can help dissipate heat and improve the heat dissipation effect of the semiconductor component SC1 because it has a heat conduction effect (that is, the conductive balls can also be called heat conduction balls).

[0148] In the present invention, the semiconductor component SC1 may include at least one first air opening OPS1 and at least one second air opening OPS2. The air flow generated by the air flow generating wafer AFC can flow through the first air opening OPS1 and the second air opening OPS2. The air flow can flow into the semiconductor component SC1 through the first air opening OPS1 or the second air opening OPS2 (that is, one of the first air opening OPS1 and the second air opening OPS2 can be the air flow inlet), and the air flow can flow out of the semiconductor component SC1 through the first air opening OPS1 or the second air opening OPS2 (that is, the other of the first air opening OPS1 and the second air opening OPS2 can be the air flow outlet). In some embodiments, since the flow direction of the air flow (air pulse) generated by the air flow generating wafer AFC is reversible, when the air flow (air pulse) reverses, the air flow inlet and the air flow outlet will be interchanged.

[0149] The first air opening OPS1 and the second air opening OPS2 can be designed according to requirements. The number of the first air opening OPS1 and the number of the second air opening OPS2 can be designed according to requirements. For example, in Figure 3 , the semiconductor component SC1 may include one first air opening OPS1 and one second air opening OPS2. The substrate BSS may have the first air opening OPS1 overlapping the air flow generating wafer AFC (that is, the first air opening OPS1 is formed at the bottom of the air flow generating wafer AFC). The ventilation opening OPV (that is, the slit SL) of the air flow generating wafer AFC can be the second air opening OPS2 (that is, the second air opening OPS2 is formed at the top of the air flow generating wafer AFC), but not limited thereto.

[0150] Moreover, the designs of the first air opening OPS1 and the second air opening OPS2 can be related to the path of the airflow in the semiconductor element SC1. For example, the direction of the airflow passing through the first air opening OPS1 can be parallel or perpendicular to the direction of the airflow passing through the second air opening OPS2 (e.g., in Figure 3 the direction of the airflow passing through the first air opening OPS1 can be parallel to the direction of the airflow passing through the second air opening OPS2), but not limited thereto.

[0151] Please refer to Figure 4 , Figure 4 which shows a cross-sectional schematic view of a semiconductor element with an airflow generating wafer in another embodiment of the present invention. As Figure 4 shown, the difference between this embodiment and the semiconductor element SC1 shown in Figure 3 lies in the type of the semiconductor element SC2 of this embodiment. For example, in Figure 4 the semiconductor element SC2 can be a 3D integrated circuit, such that the substrate BSS on which the airflow generating wafer AFC is disposed (stacked) can be the wafer CP and / or the interposer ITP, and the airflow generating wafer AFC can be electrically connected to the wafer CP through at least one connection structure CM (e.g., solder or conductive balls), but not limited thereto. In Figure 4 the connection structure CM can be disposed between the airflow generating wafer AFC and the wafer CP.

[0152] In addition, the designs of the first air opening OPS1 and the second air opening OPS2 of this embodiment are different from those of the semiconductor element SC1 shown in Figure 3 For example, in Figure 4 the first air opening OPS1 can be the space created by the connection structure CM between the wafer CP (substrate BSS) and the airflow generating wafer AFC (e.g., the first air opening OPS1 is located behind the connection structure CM in Figure 4 ), the ventilation opening OPV (i.e., the slit SL) of the airflow generating wafer AFC can be the second air opening OPS2, and the direction of the airflow passing through the first air opening OPS1 can be perpendicular to the direction of the airflow passing through the second air opening OPS2, but not limited thereto. Similarly, the first air opening OPS1 is formed at the bottom of the airflow generating wafer AFC, and the second air opening OPS2 is formed at the top of the airflow generating wafer AFC.

[0153] Please refer to Figure 5 , Figure 5 which shows cross-sectional schematic views of four designs of an airflow generating package with an airflow generating wafer in some embodiments of the present invention. It should be noted that the airflow generating wafer AFC can be directly packaged in the airflow generating package PG (e.g., in Figure 5as shown), or the airflow generating wafer AFC can be a wafer of a semiconductor component SC (such as, Figure 3 the 2.5D integrated circuit shown or Figure 4 the 3D integrated circuit shown) encapsulated in the airflow generating package PG, where the airflow generating package PG can be a semiconductor device.

[0154] In the present invention, the airflow generating package PG can be any suitable package or applied to any suitable package to encapsulate the airflow generating wafer AFC or the semiconductor component SC having the airflow generating wafer AFC in any suitable manner. For example, the airflow generating package PG can be or applied in a chip scale package (CSP), a 2.5D semiconductor package, a 3D semiconductor package, a CoWoS package, a ball grid array (BGA) package or other suitable packages, and the structure of the airflow generating package PG and the components included in the airflow generating package PG can correspond to the type of the airflow generating package PG. For example (not shown in the figure), the airflow generating wafer AFC can be arranged in a flip-chip manner, but not limited thereto.

[0155] In Figure 5 the airflow generating package PG shown, the airflow generating package PG includes a package housing PH, and the airflow generating wafer AFC or the semiconductor component SC having the airflow generating wafer AFC is arranged in the package housing PH such that the airflow generating package PG is protected by the package housing PH. In other words, the airflow generating wafer AFC is encapsulated in the package housing PH. It should be noted that a first cavity CY1 and a second cavity CY2 exist in the package housing PH and are separated by the film structure FS of the airflow generating wafer AFC.

[0156] Such as Figure 5As shown, the encapsulation housing PH of the air flow generating package PG may include a substrate BSP, where the air flow generating wafer AFC may be disposed on the substrate BSP, and a first cavity CY1 may exist between the substrate BSP and the membrane structure FS of the air flow generating wafer AFC. The substrate BSP may be a rigid substrate or a flexible substrate, where the substrate BSP may include glass, plastic, quartz, sapphire, metal, polymer (e.g., polyimide (PI), polyethylene terephthalate (PET)), any suitable material, or a combination thereof. In one example, the substrate BSP may be a circuit board including a laminate (e.g., a copper clad laminate (CCL)), a land grid array board (LGA board), or any other suitable board including a conductive material, but not limited thereto.

[0157] In Figure 5 , the substrate BSP may have an upper surface parallel to directions X and Y (i.e., the upper surface of the substrate BSP may be a horizontal plane), and the normal direction of the upper surface of the substrate BSP may be parallel to direction Z.

[0158] In the present invention, the air flow generating wafer AFC or the semiconductor element SC having the air flow generating wafer AFC may be electrically connected to the conductive member in the substrate BSP through a connection structure having a conductive material. For example, the connection structure may be solder, conductive balls (such as the conductive balls used in BGA packages), or other structures, but not limited thereto. It should be noted that this connection structure (such as solder or conductive balls) can help dissipate heat due to its heat conduction effect, thereby improving the heat dissipation effect of the air flow generating package PG.

[0159] As Figure 5 shown, the encapsulation housing PH of the air flow generating package PG may include a covering structure CSV for covering and protecting the air flow generating wafer AFC or the semiconductor element SC having the air flow generating wafer AFC, where a second cavity CY2 may exist between the covering structure CSV and the membrane structure FS of the air flow generating wafer AFC. In Figure 5 , the covering structure CSV may be disposed on the substrate BSP, and the air flow generating wafer AFC may be disposed between the substrate BSP and the covering structure CSV. For example, the covering structure CSV may include glass, plastic, quartz, sapphire, metal, polymer, any suitable material, or a combination thereof (such as Figure 5 shown, the covering structure CSV may include metal), or the covering structure CSV may be a metal cover.

[0160] In Figure 5Among them, the covering structure CSV may include a top CSVt and at least one sidewall CSVw, where the sidewall CSVw is between the substrate BSP and the top CSVt. For example (as Figure 5 shown), the covering structure CSV including the top CSVt and the sidewall CSVw may be an integral structure (such as a lid), but is not limited thereto. For example (as Figure 5 shown), the substrate BSP and the top CSVt may be substantially parallel to each other, and the sidewall CSVw may surround the airflow generating wafer AFC, but is not limited thereto.

[0161] In the present invention, the package housing PH of the airflow generating package PG may have a plurality of air openings OPP, and the airflow generated by the airflow generating wafer AFC may flow through the air openings OPP. In some embodiments, the package housing PH may have at least one air opening OPP1 connected to the first cavity CY1 and at least one air opening OPP2 connected to the second cavity CY2, where the airflow may flow into the airflow generating package PG through the air opening OPP1 or the air opening OPP2 (i.e., one of the air opening OPP1 and the air opening OPP2 may be an airflow inlet), and the airflow may flow out of the airflow generating package PG through the air opening OPP1 or the air opening OPP2 (i.e., the other of the air opening OPP1 and the air opening OPP2 may be an airflow outlet). In some embodiments, since the flow direction of the airflow (air pulse) generated by the airflow generating wafer AFC is reversible, when the airflow (air pulse) reverses, the airflow inlet and the airflow outlet will be interchanged.

[0162] In some embodiments, the substrate BSP and the covering structure CSV may be formed of the same material. That is to say, the substrate BSP may be regarded as a part of the covering structure CSV, and vice versa. The substrate BSP and the covering structure CSV may both be regarded as parts of the package housing PH.

[0163] The air openings OPP may be formed on the top, bottom or sidewall of the package housing PH. In this embodiment, the air openings OPP1 and OPP2 may be designed according to requirements, and the number of the air openings OPP1 and the number of the air openings OPP2 may be designed according to requirements, where the design of the air openings OPP1 and OPP2 may be related to the path of the airflow in the airflow generating package PG. For example, the direction of the airflow flowing through the air opening OPP1 may be parallel or perpendicular to the direction of the airflow flowing through the air opening OPP2, but is not limited thereto. Four designs of the airflow generating package PG shown in Figure 5 will be described below.

[0164] In Figure 5In the first design DS1 of the airflow generating package PG shown, the substrate BSP may have an air opening OPP1 overlapping the airflow generating wafer AFC, and the top CSVt of the covering structure CSV may have an air opening OPP2 such that the direction of the airflow passing through the air opening OPP1 may be parallel to the direction of the airflow passing through the air opening OPP2, but not limited thereto.

[0165] In Figure 5 In the second design DS2 of the airflow generating package PG shown, the substrate BSP may have an air opening OPP1 overlapping the airflow generating wafer AFC, and the sidewall CSVw of the covering structure CSV may have an air opening OPP2 such that the direction of the airflow passing through the air opening OPP1 may be perpendicular to the direction of the airflow passing through the air opening OPP2, but not limited thereto.

[0166] In Figure 5 In the third design DS3 of the airflow generating package PG shown, the sidewall CSVw of the covering structure CSV may have an air opening OPP1, and the airflow generating wafer AFC (e.g., the anchoring structure AR of the airflow generating wafer AFC) may have an air channel AL, and the air channel AL is connected between the air opening OPP1 and the first cavity CY1, and the top CSVt of the covering structure CSV may have an air opening OPP2 such that the direction of the airflow passing through the air opening OPP1 may be perpendicular to the direction of the airflow passing through the air opening OPP2, but not limited thereto. It should be noted that the airflow passes through the air channel AL during the operation of the airflow generating package PG, and the flow direction of the airflow in the air channel AL is perpendicular to the direction Z (e.g., the normal direction of the substrate BSP or the normal direction of the film structure FS).

[0167] In Figure 5 In the fourth design DS4 of the airflow generating package PG shown, the side surface of the substrate BSP may have an air opening OPP1, and the substrate BSP may have an empty structure EP, and the empty structure EP is connected between the air opening OPP1 and the first cavity CY1, and the top CSVt of the covering structure CSV may have an air opening OPP2 such that the direction of the airflow passing through the air opening OPP1 may be perpendicular to the direction of the airflow passing through the air opening OPP2, but not limited thereto. For example, the empty structure EP may be an air channel (e.g., Figure 6 the structure shown), a cavity (e.g., Figure 7The structure shown) or other suitable structures, but not limited thereto. It should be noted that during the operation of generating the airflow generating package PG, the airflow passes through the air channel (i.e., an empty structure EP), and the flow direction of the airflow in the air channel is perpendicular to the direction Z (e.g., the normal direction of the substrate BSP or the normal direction of the film structure FS). It should be noted that during the operation of generating the airflow generating package PG, the airflow may or may not pass through the cavity (i.e., an empty structure EP).

[0168] In the present invention, the airflow generating package PG is not limited to Figure 5 the four designs shown. Figures 6 to 10 Some variation examples of the above four designs are illustrated.

[0169] In Figure 6 the airflow generating package PG1 shown (which is a variation example of the fourth design DS4), the empty structure EP of the substrate BSP can serve as the air channel AL and be connected between the air opening OPP1 and the first cavity CY1. Additionally, the top CSVt of the covering structure CSV may have multiple air openings OPP2, but not limited thereto. Furthermore, in Figure 6 it, the airflow generating wafer AFC may include multiple film structures FS, and each film structure FS may include multiple flap pairs FP (in Figure 6 one film structure FS shown, three flaps FL respectively belong to three different flap pairs FP) to enhance the airflow generated by the airflow generating wafer AFC, but not limited thereto.

[0170] In Figure 6 it, the airflow generating package PG1 can be disposed on the surface SF of a heat source or a heat sink and / or be in direct contact with the surface SF of the heat source or the heat sink to assist in the dissipation of the heat of the heat source / heat sink.

[0171] In Figure 7 the airflow generating package PG2 shown (which is another variation example of the fourth design DS4), the empty structure EP of the substrate BSP can serve as the cavity CHB and be connected between the air opening OPP1 and the first cavity CY1 to enhance the airflow generated by the airflow generating wafer AFC. For example, the substrate BSP can be an integral structure or can be formed by multiple sub-structures (such as multiple substrates). In Figure 7 it, the empty structure EP (i.e., the cavity) is formed on one side of the film structure FS, and the air opening OPP1 is formed on the sidewall BSPw of the substrate BSP.

[0172] In other words, due to the presence of the cavity CHB, the air flow generating package PG2 can have a relatively large back volume. By appropriately designing the size of the cavity CHB, Helmholtz resonance (HHR) can be formed within the cavity CHB (or the back volume of the air flow generating package PG2), and the air flow generating package PG2 can obtain ultrasonic acoustic characteristics therein, thus having more advantages in generating air flow.

[0173] In Figure 8 the air flow generating package PG3 shown (which is a variation example of the second design DS2), the air flow generating package PG3 can have a plurality of air flow generating wafers AFC1 and AFC2. Among them, the air flow generating wafer AFC1 can be connected to the substrate BSP, and the air flow generating wafer AFC2 can be connected to the covering structure CSV. For example, the air flow generating wafers AFC1 and AFC2 can overlap in the Z direction (e.g., the air flow generating wafers AFC1 and AFC2 can be stacked on top of each other), but this is not limiting. In Figure 8 it, a first cavity CY1_1 can exist between the substrate BSP and the air flow generating wafer AFC1, a first cavity CY1_2 can exist between the covering structure CSV and the air flow generating wafer AFC2, and a second cavity CY2 can exist between the two air flow generating wafers AFC1 and AFC2.

[0174] As Figure 8 shown, the encapsulation housing PH can have a plurality of air openings OPP1 and at least one air opening OPP2. The air opening OPP1 is connected to the first cavity CY1_1 and / or the first cavity CY1_2, and the air opening OPP2 is connected to the second cavity CY2. For example, in the air flow generating package PG3, the substrate BSP can have an air opening OPP1 that overlaps the air flow generating wafer AFC1 and is connected to the first cavity CY1_1. The top CSVt of the covering structure CSV can have another air opening OPP1 that overlaps the air flow generating wafer AFC2 and is connected to the first cavity CY1_2. The two side walls CSVw of the covering structure CSV can have two air openings OPP2 that are opposite to each other and are connected to the second cavity CY2, such that the direction of the air flow passing through the air opening OPP1 can be perpendicular to the direction of the air flow passing through the air opening OPP2, but this is not limiting.

[0175] In Figure 8 the air flow generating package PG3' shown (which is another variation example of the second design DS2), compared with the air flow generating package PG3, the side wall CSVw of the covering structure CSV of the air flow generating package PG3' can have an air opening OPP2, but this is not limiting.

[0176] In the air-flow generating package PG3 and the air-flow generating package PG3', the side wall CSVw of the covering structure CSV can be the side wall of the package housing PH, and the top CSVt and the base BSP of the covering structure CSV can be the top and the bottom of the package housing PH, respectively.

[0177] In the air-flow generating package PG3, the air-flow generating package PG3', or a variant thereof, the air-flow generating wafer AFC1 and / or the air-flow generating wafer AFC2 can be arranged in a flip-chip manner. For example, one of the air-flow generating wafers AFC1 and AFC2 is arranged in a flip-chip manner, but not limited thereto.

[0178] In Figure 8 stacking two or more air-flow generating wafers helps to increase the total amount of air flow generated by the air-flow generating package, and this design is also within the scope of the present invention.

[0179] In Figure 9 the air-flow generating package PG4 shown (which is a variant example of the second design DS2), the air-flow generating package PG4 can have a plurality of package units PU1 and PU2 connected to each other, where the package unit PU1 can include at least one air-flow generating wafer AFC (e.g., Figure 9 the two air-flow generating wafers AFC1 and AFC2 in Figure 9 ), a base BSP1, and a covering structure CSV1, and the package unit PU2 can include at least one air-flow generating wafer AFC (e.g., Figure 9 the two air-flow generating wafers AFC3 and AFC4 in

[0180] such as Figure 9As shown, the encapsulation housing PH may have a plurality of air openings OPP1 and a plurality of air openings OPP2. The air opening OPP1 is connected to one or more of the first cavities CY1_1, CY1_2, CY1_3, CY1_4, and the air opening OPP2 is connected to one of the second cavities CY2_1, CY2_2. For example, one air opening OPP1 may exist between two substrates BSP1, BSP2 and be connected to the first cavities CY1_1, CY1_3 (this air opening OPP1 is formed by thinning the two substrates BSP1, BSP2). The covering structure CSV1 may have another air opening OPP1 that overlaps the airflow generating wafer AFC2 and is connected to the first cavity CY1_2. The covering structure CSV2 may have yet another air opening OPP1 that overlaps the airflow generating wafer AFC4 and is connected to the first cavity CY1_4. The covering structure CSV1 may have an air opening OPP2 that is connected to the second cavity CY2_1. The covering structure CSV2 may have another air opening OPP2 that is connected to the second cavity CY2_2, such that the direction of the airflow passing through one of the air openings OPP1 may be parallel or perpendicular to the direction of the airflow passing through the air opening OPP2, but not limited thereto. Accordingly, in Figure 9 Since the number of airflow generating wafers AFC increases, the airflow generated by the airflow generating wafers AFC is enhanced.

[0181] In Figure 10 the airflow generating package PG5 shown (which is another variation example of the second design DS2), the airflow generating package PG5 may further include a heat dissipation structure TP, connected to the covering structure CSV, to enhance the heat dissipation effect caused by the airflow generating package PG5. In some embodiments, the heat dissipation structure TP may be disposed on the outer side or the inner side of the covering structure CSV (e.g., Figure 10 the heat dissipation structure TP shown may be disposed on the outer side of the covering structure CSV). For example, in Figure 10 the heat dissipation structure TP may have a plurality of heat dissipation units, distributed on the covering structure CSV, but not limited thereto. In some embodiments, the heat dissipation structure TP and / or the heat dissipation units of the heat dissipation structure TP may be notches or protrusions (or projections) of the covering structure CSV (e.g., Figure 28 the integrated structure shown includes the heat dissipation structure TP and the covering structure CSV), or the heat dissipation structure TP and / or the heat dissipation units of the heat dissipation structure TP may be adhered to the covering structure CSV (e.g., the heat dissipation structure TP and / or the heat dissipation units of the heat dissipation structure TP may be heat sinks, heat spreaders, etc.).

[0182] In the present invention, an airflow generating element (e.g., an airflow generating wafer AFC, a semiconductor element SC having the airflow generating wafer AFC, or an airflow generating package PG having the airflow generating wafer AFC) can be used in a device DV such that the airflow generated by the airflow generating element (i.e., the airflow generating wafer AFC) can dissipate the heat generated by the elements in this device DV. Therefore, the heat dissipation performance of the device DV can be improved by the airflow created by the airflow generating element. For example, the device DV can be an electronic device (such as a smart phone, a tablet computer, or other suitable electronic devices). Some embodiments of the device DV having an airflow generating element are illustrated in Figures 11 to 17 wherein Figures 11 to 17 the illustrated airflow generating element is an airflow generating package PG having the airflow generating wafer AFC, but the device DV is not limited to the following embodiments.

[0183] Please refer to Figure 11 , Figure 11 which shows a cross-sectional schematic view of a device having a heat source and an airflow generating wafer in the first embodiment of the present invention. In Figure 11 wherein Figure 11 the illustrated airflow generating package PG can be a variant embodiment belonging to the first design DS1 shown in Figure 5 wherein the substrate BSP can have an air opening OPP1, and the top CSVt of the covering structure CSV can have a plurality of air openings OPP2 such that the direction of the airflow passing through the air opening OPP1 can be parallel to the direction of the airflow passing through the air opening OPP2, but not limited thereto.

[0184] As Figure 11 shown, the device 100 includes a heat source (or operating element) 110, wherein the heat source (operating element) 110 generates heat during operation, and the airflow generating package PG in the device 100 is used to generate an airflow to dissipate the heat generated by the heat source 110. In the present invention, the heat source 110 can be any suitable element that can generate heat during operation. For example, the heat source 110 can be an operating element formed by a semiconductor process (i.e., the operating element can also be called a heat generating wafer), wherein the operating element can be a wafer, a 2.5D integrated circuit, a 3D integrated circuit, but not limited thereto. For example, the operating element can be or include an application processor (AP), a central processing unit (CPU), a graphic processing unit (GPU), a tensor processing unit (TPU), an XPU, or a memory, but not limited thereto. For example, the normal direction of the upper surface of the heat source 110 can be parallel to the direction Z, but not limited thereto.

[0185] In the present invention, the reference numeral "110" may be used to represent a heat source, a heat - generating wafer, and an operating element. The terms "heat source", "heat - generating wafer", and "operating element" may be used interchangeably.

[0186] As Figure 11 shown, the device 100 may include a heat - conducting element 120, which is disposed adjacent to the heat source 110 and is used to conduct the heat generated by the heat source 110. For example, the heat source 110 may be connected to the heat - conducting element 120 to improve the heat - dissipation effect (e.g., heat - dissipation efficiency). The heat - conducting element 120 may be any suitable element capable of conducting heat. For example, the heat - conducting element 120 may include a heat sink, a radiator, a thermal interface material, an interposer, a heat pipe, a vapor chamber, other suitable elements, or a combination thereof (e.g., Figure 11 as shown, the heat - conducting element 120 may be a radiator), but is not limited thereto.

[0187] As Figure 11 shown, an air - flow - generating package PG (i.e., an air - flow - generating element) may be disposed adjacent to the heat - conducting element 120, such that the heat generated by the heat source 110 can be dissipated through the heat - conducting element 120 and the air flow generated by the air - flow - generating package PG. In some embodiments, the air - flow - generating package PG may be disposed on the heat source 110 and / or the heat - conducting element 120, such that the membrane structure FS of the air - flow - generating package PG can generate an air flow to dissipate the heat of the heat source 110 and / or the heat - conducting element 120. For example, in Figure 11 , the air - flow - generating package PG may be disposed on the heat - conducting element 120 and overlap the heat - conducting element 120, but is not limited thereto. For example, in Figure 11 , the membrane structure FS of the air - flow - generating package PG may face the heat - conducting element 120. For example, in Figure 11 , the covering structure CSV of the air - flow - generating package PG may be disposed between the heat - conducting element 120 and the membrane structure FS, but is not limited thereto. For example, in Figure 11 , the heat source 110 and the air - flow - generating package PG may be disposed on the same side of the heat - conducting element 120.

[0188] In the present embodiment, the heat generated by the heat source 110 can first be conducted and dissipated through the heat - conducting element 120. Then, the air flow generated by the air - flow - generating package PG can cause cold air to flow into the device 100 and hot air to flow out of the device 100 to dissipate the heat of the heat - conducting element 120. In Figure 11 , the air - flow - generating package PG can be used to dissipate the heat of the part of the heat - conducting element 120 that overlaps the air - flow - generating package PG, but is not limited thereto.

[0189] AsFigure 11 As shown, the device 100 may include a housing 130. A heat source 110, a heat conducting element 120, and an air flow generating package PG (i.e., an air flow generating element) are disposed in the housing 130 such that the heat conducting element 120 and the air flow generating package PG can be protected by the housing 130. In Figure 11 , the housing 130 may be the outermost structure of the device 100.

[0190] In this embodiment, the heat conducting element 120 may be disposed in the housing 130 over a large area to improve the heat dissipation effect of the heat conducting element 120. Additionally, based on the presence of the heat conducting element 120, the positions of the heat source 110 and the air flow generating package PG can be elastically designed. For example, in Figure 11 , the heat source 110 and the air flow generating package PG may be disposed in different regions in the housing 130 and do not overlap in the Z direction (e.g., in Figure 11 , the heat source 110 and the air flow generating package PG may be separated from each other by a spacer 140), and the heat generated by the heat source 110 can still be dissipated through the air flow generating package PG due to the presence of the heat conducting element 120, but this is not limited thereto. It should be noted that the spacer 140 used to separate the air flow generating package PG and the heat source 110 can prevent the air flow (or the air flow direction) from being too diverse, which helps to improve the heat dissipation efficiency and technical effect. For example, in Figure 11 , the air flow generating package PG may be disposed beside the edge of the device 100 (or the air flow generating package PG is disposed adjacent to the edge of the device 100), and the heat conducting element 120 may extend from the heat source 110 towards the air flow generating package PG such that the air flow generated by the air flow generating package PG can flow through the heat conducting element 120.

[0191] In Figure 11 , the housing 130 may include at least one first housing opening 132 related to an air opening OPP1 and at least one second housing opening 134 related to an air opening OPP2. The air flow generated by the air flow generating wafer AFC in the air flow generating package PG can flow through the first housing opening 132 and the second housing opening 134. Among them, the air flow can flow into the device 100 through the first housing opening 132 or the second housing opening 134 (i.e., one of the first housing opening 132 and the second housing opening 134 can be the device air inlet), and the air flow can flow out of the device 100 through the first housing opening 132 or the second housing opening 134 (i.e., the other of the first housing opening 132 and the second housing opening 134 can be the device air outlet). The first housing opening 132 and the second housing opening 134 can be disposed beside the same edge or different edges of the device 100. Since the flow direction of the air flow generated by the air flow generating wafer AFC in the air flow generating package PG is reversible, when the air flow reverses, the device air inlet and the device air outlet will be interchanged.

[0192] In the first flow direction of the air flow of the device 100, the air flow sequentially passes through the first housing opening 132, the air opening OPP1, the film structure FS of the air flow generating wafer AFC, the air opening OPP2, and the second housing opening 134. In the second flow direction of the air flow of the device 100, the air flow sequentially passes through the second housing opening 134, the air opening OPP2, the film structure FS of the air flow generating wafer AFC, the air opening OPP1, and the first housing opening 132.

[0193] The first housing opening 132 and the second housing opening 134 can be designed according to requirements. The number of the first housing openings 132 and the number of the second housing openings 134 can be designed according to requirements, wherein the design of the first housing opening 132 and the second housing opening 134 can be related to the path of the air flow in the device 100. For example, the direction of the air flow passing through the first housing opening 132 can be parallel or perpendicular to the direction of the air flow passing through the second housing opening 134 (in Figure 11 the direction of the air flow passing through the first housing opening 132 can be parallel to the direction of the air flow passing through the second housing opening 134), but not limited thereto.

[0194] The direction of the air flow passing through the air opening OPP1, the direction of the air flow passing through the air opening OPP2, the direction of the air flow passing through the first housing opening 132, and the direction of the air flow passing through the second housing opening 134 can be designed according to requirements. For example, the direction of the air flow passing through the air opening OPP1 and the direction of the air flow passing through the air opening OPP2 can be perpendicular to the direction of the air flow passing through the first housing opening 132 and the direction of the air flow passing through the second housing opening 134, but not limited thereto.

[0195] Please refer to Figure 12 , Figure 12 which shows a cross-sectional schematic view of a device with a heat source and an air flow generating wafer in the second embodiment of the present invention, wherein Figure 12 the shown air flow generating package PG can be a variant embodiment belonging to Figure 5 the first design DS1 shown. As Figure 12 shown, the difference between this embodiment and the embodiment shown in Figure 11 is the type of the heat conducting element 120 of the device 200. In Figure 12 the heat conducting element 120 can be a heat pipe or a vapor chamber, wherein there is a space 122 filled with liquid and / or gas in the heat conducting element 120.

[0196] As Figure 12 shown, the difference between this embodiment and the embodiment shown in Figure 11Another difference in the illustrated embodiment lies in the position of the first housing opening 132. Accordingly, the directions of the airflows passing through the air openings OPP1, OPP2, and the first housing opening 132 may be perpendicular to the direction of the airflow passing through the second housing opening 134, but not limited thereto.

[0197] Please refer to Figure 13 , Figure 13 FIG. shows a cross-sectional schematic view of an apparatus having a heat source and an airflow generating wafer in the third embodiment of the present invention, where Figure 13 the illustrated airflow generating package PG may be a variant embodiment belonging to Figure 5 the second design DS2 shown. As Figure 13 shown, the difference between this embodiment and Figure 11 the illustrated embodiment lies in the position of the heat source 110 of the apparatus 300. In Figure 13 , the heat source 110, the heat conducting element 120, and the airflow generating package PG (i.e., the airflow generating element) may overlap in the Z direction, and the heat conducting element 120 may be disposed between the heat source 110 and the airflow generating package PG in the Z direction. Additionally, in Figure 13 , the substrate BSP of the airflow generating package PG may be disposed between the heat conducting element 120 and the membrane structure FS, but not limited thereto.

[0198] Please refer to Figure 14 , Figure 14 FIG. shows a cross-sectional schematic view of an apparatus having a heat source and an airflow generating wafer in the fourth embodiment of the present invention, where Figure 14 the illustrated airflow generating package PG may be a variant embodiment belonging to Figure 5 the second design DS2 shown. As Figure 14 shown, the difference between this embodiment and Figure 11 the illustrated embodiment lies in that the heat conducting element 120 of the apparatus 400 is connected to the covering structure CSV of the airflow generating package PG, such that the thermal energy of the heat conducting element 120 is directly conducted to the airflow generating package PG. For example (not shown in Figure 14 ), the heat conducting element 120 may be adhered to the covering structure CSV of the airflow generating package PG through a material with a high thermal conductivity (such as a thermal interface material), but not limited thereto. The thermal interface material may be or include thermal grease, thermal gel, thermal pad, phase change material (PCM), phase change metal alloy (PCMA), thermal conductive adhesive, but not limited thereto.

[0199] Please refer to Figure 15 , Figure 15 which is a schematic cross-sectional view of a device with a heat source and an air-flow generating wafer in the fifth embodiment of the present invention, wherein Figure 15 the shown air-flow generating package PG can be a variant embodiment belonging to Figure 5 the second design DS2 shown. As Figure 15 shown, the difference between this embodiment and Figure 14 the embodiment shown lies in the position of the heat source 110 of the device 500. In Figure 15 , the heat source 110, the heat conducting element 120 and the air-flow generating package PG (i.e., the air-flow generating element) can overlap in the Z direction, and the heat conducting element 120 can be arranged between the heat source 110 and the air-flow generating package PG in the Z direction.

[0200] As Figure 15 shown, another difference between this embodiment and Figure 14 the embodiment shown lies in the position of the first housing opening 132 of the device 500. Therefore, the directions of the air flows passing through the air opening OPP1, the air opening OPP2 and the first housing opening 132 can be perpendicular to the direction of the air flow passing through the second housing opening 134, but not limited thereto.

[0201] Please refer to Figure 16 , Figure 16 which is a schematic cross-sectional view of a device with a heat source and an air-flow generating wafer in the sixth embodiment of the present invention, wherein Figure 16 the shown air-flow generating package PG can be a variant embodiment belonging to Figure 5 the second design DS2 shown. As Figure 16 shown, the difference between this embodiment and Figure 15 the embodiment shown lies in that the air-flow generating package PG of the device 600 includes a heat dissipation structure TP connected to the covering structure CSV, wherein the heat dissipation structure TP is arranged within the covering structure CSV to enhance the heat dissipation effect caused by the air-flow generating package PG. For example, in Figure 16 , the heat dissipation structure TP can have a plurality of heat dissipation units distributed on the covering structure CSV, but not limited thereto.

[0202] Please refer to Figure 17 , Figure 17 which is a schematic cross-sectional view of a device with a heat source and an air-flow generating wafer in the seventh embodiment of the present invention, wherein Figure 17 the shown air-flow generating package PG can be a variant embodiment belonging to Figure 5 the second design DS2 shown. As Figure 17 shown, the difference between this embodiment and Figure 15The difference in the illustrated embodiments lies in the design of the heat-conducting element 120 of the device 700. In Figure 17 , the heat-conducting element 120 can completely overlap the airflow generating package PG in the Z direction, and the heat source 110 can be connected to the covering structure CSV of the airflow generating package PG through the heat-conducting element 120. For example, the heat-conducting element 120 can include a heat sink, a radiator, a thermal interface material, an interposer, or a combination thereof, but is not limited thereto. Additionally, in Figure 17 , the heat source 110 can be disposed on the plate body 710 (such as, a circuit board) such that the heat source 110 can be disposed between the plate body 710 and the heat-conducting element 120, but is not limited thereto.

[0203] A miniaturized device DV will be provided below. For example, the device DV below can be a semiconductor device, which is an electronic device, and the semiconductor device can be formed by a semiconductor process (the semiconductor process includes a packaging process), and the size of the semiconductor device can be similar to or the same as the size of the semiconductor packaging structure. Some embodiments of the device DV as a semiconductor device are illustrated in Figures 18 to 23 , but the device DV is not limited to the following embodiments.

[0204] Please refer to Figure 18 , Figure 18 which shows a cross-sectional schematic view of a device with a heat source and an airflow generating wafer in the eighth embodiment of the present invention, where the airflow generating element can be an airflow generating package PG having an airflow generating wafer AFC (for the detailed content of the airflow generating package PG, please refer to the above). In Figure 18 the illustrated device 800, the airflow generating package PG having the airflow generating wafer AFC can be disposed on and overlap the heat source 110 in the Z direction. It should be noted that the device 800 can be regarded as a semiconductor device, and the airflow generating wafer AFC and the operating element (heat source 110) can be manufactured by a semiconductor process. The operating element (heat source 110) can be or include an application processor (suitable for mobile devices such as smartphones and tablets), a central processing unit, a graphics processing unit, a tensor processing unit, or a memory, and the operating element generates heat during operation. The operating element can be regarded as a heat source 110.

[0205] Optionally, the device 800 may include a heat-conducting element 120 disposed between the airflow generating package PG and the heat source 110 to enhance the heat dissipation effect. For example, the heat-conducting element 120 may include a heat sink, a radiator, a thermal interface material, an interposer, or a combination thereof, but is not limited thereto. In some embodiments, the heat source 110 may be connected to the airflow generating package PG through the heat-conducting element 120 (e.g., the heat source 110, the heat-conducting element 120, and the airflow generating package PG (or the airflow generating wafer AFC) may overlap in the direction Z). For example, the heat source 110 may be adhered to the airflow generating package PG through the heat-conducting element 120, but is not limited thereto.

[0206] In Figure 18 it, the device 800 may have at least one first device opening 802 and at least one second device opening 804. In addition, an air channel 806 is formed between the operating element (heat source 110) and the airflow generating wafer AFC. The airflow generated by the airflow generating wafer AFC of the airflow generating package PG can flow through the air channel 806, the first device opening 802, and the second device opening 804, where the airflow can flow into the device 800 through the first device opening 802 or the second device opening 804 (i.e., one of the first device opening 802 and the second device opening 804 can be the device airflow inlet), and the airflow can flow out of the device 800 through the first device opening 802 or the second device opening 804 (i.e., the other of the first device opening 802 and the second device opening 804 can be the device airflow outlet) to dissipate the heat generated by the heat source 110 (operating element). Since the flow direction of the airflow generated by the airflow generating wafer AFC of the airflow generating package PG is reversible, when the airflow is reversed, the device airflow inlet and the device airflow outlet will be interchanged.

[0207] For example, the first device opening 802 may be the air opening OPP1 of the package housing PH of the airflow generating package PG, and the second device opening 804 may be the air opening OPP2 of the package housing PH of the airflow generating package PG, but is not limited thereto. For example, the first device opening 802 or the second device opening 804 may be located between the airflow generating package PG and the heat source 110 and does not belong to the airflow generating package PG, but is not limited thereto.

[0208] Belonging to Figure 18 A example of the device 800' of the design shown in Figure 19 is illustrated in Figure 19 wherein Figure 5 the airflow generating package PG shown is a variant embodiment of the second design DS2 belonging to Figure 19 shown. As Figure 19is omitted. Additionally, the base BSP may have a plurality of air openings OPP1 that overlap with the membrane structure FS of the air flow generating wafer AFC, and the side wall CSVw of the covering structure CSV may have an air opening OPP2 such that the direction of the air flow passing through the air opening OPP1 may be perpendicular to the direction of the air flow passing through the air opening OPP2. In Figure 19 , the first device opening 802 may be the air opening OPP1 of the air flow generating package PG, and the second device opening 804 may be the air opening OPP2 of the air flow generating package PG.

[0209] In Figure 19 , the covering structure CSV of the air flow generating package PG may be between the heat source 110 and the base BSP of the air flow generating package PG, and the heat source 110 may be connected to the covering structure CSV of the air flow generating package PG through a heat conducting element 120 (e.g., the heat conducting element 120 may directly contact the heat source 110 and the covering structure CSV).

[0210] Furthermore, the cavity surrounded by the covering structure CSV may form an air channel 806'. That is to say, the air channel 806' is formed between the operating element (heat source 110) and the air flow generating wafer AFC. Similarly, the air flow generated by the air flow generating wafer AFC may flow through the air channel 806' and the air openings OPP1, OPP2, and can dissipate the heat generated by the operating element (heat source 110).

[0211] Please refer to Figure 20 , Figure 20 shows a cross-sectional schematic view of a device with a heat source and an air flow generating wafer in the ninth embodiment of the present invention, where the device 900 is an air flow generating package or a semiconductor device serving as a package, and the air flow generating element is the air flow generating wafer AFC. In Figure 20 , the device 900 serving as an air flow generating package is similar to Figure 5 the second design DS2 of the air flow generating package PG shown (it should be noted that the device 900 may be similar to any of the above designs and / or examples of the air flow generating package PG), such that the base BSP has an air opening OPP1 that overlaps with the membrane structure FS of the air flow generating wafer AFC, and the side wall CSVw of the covering structure CSV has an air opening OPP2.

[0212] The positions of the air flow generating wafer AFC and the heat source 110 may be designed according to requirements, where the air flow generating wafer AFC may be disposed adjacent to the heat source 110 (i.e., the air flow generating wafer AFC may be disposed above, below, or beside the heat source 110). For example, in Figure 20In [the figure], the airflow generating wafer AFC and the heat source 110 can be respectively disposed on two opposite sides of the substrate BSP. Among them, the airflow generating wafer AFC can be between the substrate BSP and the covering structure CSV, but not limited thereto. For example, the airflow generating wafer AFC can overlap with the heat source 110 in the Z direction, but not limited thereto.

[0213] Optionally, the device 900 (i.e., the package) can include a fin-type heat conducting element 120' (a kind of heat conducting element 120), disposed at any suitable position to enhance the heat dissipation effect. For example, the fin-type heat conducting element 120' can include a heat sink, but not limited thereto. In some embodiments, the fin-type heat conducting element 120' can be disposed on the heat source 110 (e.g., the fin-type heat conducting element 120' can be connected to or in contact with the heat source 110) to obtain the heat generated by the heat source 110. The fin-type heat conducting element 120' can penetrate the substrate BSP so that the heat of the fin-type heat conducting element 120' can be dissipated through the airflow generated by the airflow generating wafer AFC (e.g., the airflow flows through the fin-type heat conducting element 120' and is used to dissipate the heat of the heat source 110).

[0214] It should be noted that the concept of "fin-type" is to increase the surface area to enhance the heat dissipation effect. The heat sink or heat conducting element with "fin-type" is only for illustrative purposes and not limited thereto. The fin-type heat conducting element 120' includes various heat sinks or heat conducting components with non-planar surfaces (e.g., heat sinks or heat conducting elements with protrusions in regular or irregular forms).

[0215] Please refer to Figure 21 , Figure 21 FIG. shows a cross-sectional schematic view of a device with a heat source and an airflow generating wafer in the tenth embodiment of the present invention. Among them, the device 1000 is an airflow generating package or a semiconductor device serving as a package, and the airflow generating element is the airflow generating wafer AFC. In Figure 21 In the device 1000 (i.e., the package) shown, the device 1000 is similar to Figure 5 the fourth design DS4 of the airflow generating package PG shown, such that the side surface of the substrate BSP has a plurality of air openings OPP1, and the top CSVt of the covering structure CSV has an air opening OPP2.

[0216] Similar to Figure 20 the embodiment shown, the airflow generating wafer AFC and the heat source 110 can be respectively disposed on two opposite sides of the substrate BSP. The airflow generating wafer AFC can be disposed between the substrate BSP and the covering structure CSV. The fin-type heat conducting element 120' can be disposed on the heat source 110 and penetrate the substrate BSP.

[0217] In Figure 21In the figure, the air flow generating wafer AFC, the fin-type heat conducting element 120', and the heat source 110 can overlap in the Z direction, and the fin-type heat conducting element 120' can be disposed between the air flow generating wafer AFC and the heat source 110. For example (as Figure 21 shown), the fin-type heat conducting element 120' can be the wall of the hollow structure EP, but is not limited thereto.

[0218] Please refer to Figure 22 , Figure 22 shown is a cross-sectional schematic view of a device with a heat source and an air flow generating wafer in the eleventh embodiment of the present invention, where the device 1100 is an air flow generating package or a semiconductor device serving as a package, and the air flow generating element is the air flow generating wafer AFC. In Figure 22 the device 1100 (i.e., the package) shown, the device 1100 can include a plurality of air flow generating wafers AFC1, AFC2 disposed on the substrate BSP, where the air flow generating wafer AFC1 can be disposed beside the air flow generating wafer AFC2. In Figure 22 the figure, the substrate BSP can have an air opening OPP1 overlapping the air flow generating wafer AFC1 and an air opening OPP2 overlapping the air flow generating wafer AFC2, such that the direction of the air flow passing through the air opening OPP1 can be parallel to the direction of the air flow passing through the air opening OPP2. It should be noted that the flow direction of the air flow generated by the air flow generating wafer AFC1 is opposite to the flow direction of the air flow generated by the air flow generating wafer AFC2.

[0219] Similar to Figure 20 the embodiment shown, the air flow generating wafer AFC and the heat source 110 can be respectively disposed on two opposite sides of the substrate BSP, the air flow generating wafer AFC can be disposed between the substrate BSP and the covering structure CSV, and the fin-type heat conducting element 120' can be disposed on the heat source 110 and pass through the substrate BSP. For example, the air flow generating wafer AFC may not overlap the heat source 110 in the Z direction, but is not limited thereto.

[0220] In Figure 22 the figure, the heat source 110 and the fin-type heat conducting element 120' can be disposed between the two air flow generating wafers AFC1, AFC2 in the horizontal direction (e.g., the X direction), but is not limited thereto. For example, the air flow generating wafer AFC1 can be disposed on the first side of the fin-type heat conducting element 120' to form an inflowing (inward) air flow, and the air flow generating wafer AFC2 can be disposed on the second side of the fin-type heat conducting element 120' to form an outflowing (outward) air flow, but is not limited thereto.

[0221] Please refer to Figure 23 , Figure 23The following is a cross-sectional schematic view of a device with a heat source and an air flow generating wafer in the twelfth embodiment of the present invention. In the device 1200, the air flow generating package or the semiconductor device as a package, and the air flow generating element is the air flow generating wafer AFC. In Figure 23 In the illustrated device 1200 (i.e., the package), the device 1200 may include a plurality of air flow generating wafers AFC and a plurality of heat sources 110. The air flow generating wafers AFC and the heat sources 110 may be disposed between a substrate BSP and a covering structure CSV. For example, in Figure 23 the heat sources 110 may overlap each other in the Z direction (e.g., one heat source 110 may be stacked on another heat source 110 to form a 3D integrated circuit), and the air flow generating wafers AFC may overlap each other in the Z direction (e.g., the air flow generating wafer AFC1 may be stacked on the air flow generating wafer AFC3, and the air flow generating wafer AFC2 may be stacked on the air flow generating wafer AFC4). In Figure 23 the air flow generating wafers AFC may overlap the heat sources 110 in the Z direction, but not limited thereto.

[0222] In Figure 23 the heat sources 110 and the fin-type heat conducting element 120' may be disposed in the horizontal direction (e.g., the X direction) between two adjacent air flow generating wafers AFC, but not limited thereto. For example, the stacked air flow generating wafers AFC1 and AFC3 may be disposed on the first side of the fin-type heat conducting element 120', and the stacked air flow generating wafers AFC2 and AFC4 may be disposed on the second side of the fin-type heat conducting element 120', but not limited thereto. In Figure 23 the fin-type heat conducting element 120' may be disposed on the heat source 110, but not limited thereto. In some embodiments, since the conductive structure CV (e.g., TSV) connected to the heat source 110 may have a heat conducting effect, the presence of the conductive structure CV can improve the heat dissipation effect.

[0223] In some embodiments, the semiconductor device may be a semiconductor element SC including at least one air flow generating wafer AFC and at least one heat source 110. For example, Figure 4 the semiconductor element SC2 may also be referred to as a semiconductor device, Figure 4 and the wafer CP in

[0224] It should be noted that the above embodiments are used to illustrate the concept of the present invention. Those skilled in the art can make corresponding modifications and changes, which are not limited herein. For example, in Figure 24In the schematic diagram of the device 1300 (semiconductor device) according to an embodiment of the present invention as shown, compared with the above embodiment, the device 1300 (semiconductor device) includes a plurality of thermally conductive balls CB (e.g., solder balls), and may selectively include a thermally conductive element 120. The conductive balls CB are disposed between the airflow generating wafer AFC and the operating element (heat source 110). It should be noted that the conductive balls CB have thermal conductivity in addition to electrical conductivity. The thermally conductive balls CB increase the contact surface area between the element and the air, and can be used to conduct the heat generated by the operating element (heat source 110). With the help of the airflow generated by the airflow generating wafer AFC, the heat generated by the operating element (heat source 110) can be effectively dissipated.

[0225] Figure 25 The schematic diagram of another embodiment of the semiconductor device 1400 of the present invention is shown. In the semiconductor device 1400, the airflow generating wafer AFC and / or the airflow generating package PG may be disposed beside the operating element (heat source 110). The heat generated by the operating element (heat source 110) (or the heat generated by the operating element in the semiconductor device 1400) can be conducted through the thermally conductive element 120 and / or the thermally conductive balls CB, and dissipated through the airflow generated by the airflow generating wafer AFC and / or the airflow generating package PG. It should be noted that Figure 25 The airflow generating package PG shown is a top-firing package (an opening is formed at the top of the covering structure), but it is not limited thereto. A side-firing airflow generating package (an opening is formed at the side wall of the covering structure) is also within the scope of the present invention.

[0226] Figure 26 The schematic diagram of another embodiment of the semiconductor device 1500 of the present invention is shown. The semiconductor device 1500 includes a plurality of airflow generating wafers AFC and a plurality of operating elements (heat sources 110), wherein the plurality of airflow generating wafers AFC and the plurality of operating elements (heat sources 110) are stacked on top of each other, which means that the plurality of airflow generating wafers AFC and the plurality of operating elements (heat sources 110) overlap in the normal direction of the substrate BSP (or substrate) (completely overlap or partially overlap). In addition, semiconductor devices such as the semiconductor device 1500 having the airflow generating wafers AFC and the operating elements (heat sources 110) stacked on top of each other can be applied in advanced packaging processes, such as 2.5D semiconductor packages, 3D semiconductor packages, or CoWoS packages.

[0227] In one embodiment, Figure 26 The airflow generating wafer AFC shown may also be encapsulated in an airflow generating package (e.g., the airflow generating package PG), wherein the airflow generating package may be stacked with the operating element (heat source 110), and this design is also within the scope of the present invention.

[0228] Figure 27FIG. 0 is a schematic diagram of an apparatus 1110 according to another embodiment of the present invention. The apparatus 1110 includes an air flow generating wafer AFC and / or an air flow generating package PG, which are disposed adjacent to a heat sink 121. In Figure 27 In the illustrated embodiment, the air flow generating wafer AFC and / or the air flow generating package PG are disposed beside the heat sink 121 and generate an air flow to dissipate the heat carried by the heat sink 121. In one embodiment, the heat sink 121 may be a finned heat sink and may be a kind of finned heat conducting element. Different from the apparatus 1100, the finned heat conducting element is disposed outside the air flow generating package PG, and this design is also within the scope of the present invention.

[0229] Figure 28 FIG. 6 is a schematic diagram of design DSN1 and DSN2 of a covering structure 1600 according to some embodiments of the present invention. In one embodiment, the covering structure 1600 may be a metal cover of the present invention for an air flow generating package. As Figure 28 shown, the covering structure 1600 includes a plurality of protrusions TPP disposed thereon. The protrusions TPP may be located on the outer side (e.g., design DSN1) or the inner side (e.g., design DSN2) of the covering structure 1600. The function of the protrusions TPP of the covering structure 1600 is similar to that of the foregoing heat dissipating structure TP (for increasing the surface area and enhancing the heat dissipation effect). The covering structure 1600 may be used to implement the (various) covering structures CSV for the air flow generating package in the present invention.

[0230] In one embodiment, the protrusions TPP may be disposed on the outer side or the inner side of the covering structure, and this design is also within the scope of the present invention.

[0231] In summary, through the design of the heat conducting element of the present invention, the heat dissipation effect of the apparatus is improved.

[0232] The above are only the preferred embodiments of the present invention. All equivalent changes and modifications made according to the claims of the present invention shall fall within the scope of the present invention.

Claims

1. An air flow generating package, comprising: a substrate and a covering structure; and a film structure disposed between the substrate and the covering structure and including a pair of flaps, the pair of flaps including a first flap and a second flap; wherein the pair of flaps operates at an ultrasonic frequency such that the air flow generating package generates an air flow; wherein a first air opening is formed in the covering structure.

2. The air flow generating package according to claim 1, wherein the first air opening is formed on a top of the covering structure.

3. The air flow generating package according to claim 1, wherein the first air opening is formed on a side wall of the covering structure.

4. The air flow generating package according to claim 1, wherein a second air opening is formed in the substrate.

5. The air flow generating package according to claim 1, wherein an air channel is formed in the air flow generating package, the air channel being connected to a second air opening; wherein the air flow passes through the air channel; wherein a flow direction of the air flow is perpendicular to a normal direction of the film structure.

6. The air flow generating package according to claim 1, further comprising: an anchoring structure; wherein the film structure is anchored to the anchoring structure; wherein an air channel is formed in the anchoring structure, the air channel being connected to a second air opening, and the air flow passes through the air channel in the anchoring structure.

7. The air flow generating package according to claim 1, wherein an air channel is formed in the substrate, the air channel being connected to a second air opening, and the air flow passes through the air channel in the substrate.

8. The air flow generating package according to claim 1, further comprising: a fin-type heat conducting element; wherein the fin-type heat conducting element contacts a heat source; wherein the air flow passes through the fin-type heat conducting element, and the air flow is used to dissipate heat of the heat source.

9. The air flow generating package according to claim 8, further comprising: a first air flow generating wafer disposed on a first side of the fin-type heat conducting element and configured to form the air flow and direct the air flow inward; and a second air flow generating wafer disposed on a second side of the fin-type heat conducting element and configured to form the air flow and direct the air flow outward.

10. The air flow generating package according to claim 8, further comprising: a first air flow generating wafer disposed on a first side of the fin-type heat conducting element; a second air flow generating wafer disposed on a second side of the fin-type heat conducting element; a third air flow generating wafer and a fourth air flow generating wafer; wherein the first air flow generating wafer and the third air flow generating wafer are stacked on top of each other, and the second air flow generating wafer and the fourth air flow generating wafer are stacked on top of each other.

11. The air flow generating package according to claim 1, wherein a flow direction of the air flow generated by the film structure is reversible.

12. The air flow generating package according to claim 1, wherein the air flow generating package is disposed adjacent to a fin-type heat sink; Wherein the airflow generating package generates the airflow to dissipate the heat of the finned heat sink.

13. A semiconductor device, comprising: An operating element, wherein the operating element generates heat during operation; And An airflow generating wafer, disposed above, below, or beside the operating element, and configured to generate an airflow to dissipate the heat generated by the operating element.

14. The semiconductor device according to claim 13, further comprising a plurality of thermally conductive balls disposed between the airflow generating wafer and the operating element.

15. The semiconductor device according to claim 13, further comprising a thermally conductive element disposed on the operating element.

16. The semiconductor device according to claim 13, wherein the operating element and the airflow generating wafer overlap in a normal direction of an upper surface of the operating element.

17. The semiconductor device according to claim 13, wherein the semiconductor device is disposed in a 2.5D or 3D semiconductor package, or in a wafer-on-wafer-on-substrate package.

18. The semiconductor device according to claim 13, wherein the operating element includes an application processor, a central processing unit, a graphics processing unit, a tensor processing unit, or a memory.

19. The semiconductor device according to claim 13, wherein the airflow generating wafer is a microelectromechanical system wafer and is manufactured by a semiconductor process.

20. The semiconductor device according to claim 13, wherein a flow direction of the airflow generated by the airflow generating wafer is reversible.

21. The semiconductor device according to claim 13, wherein an air channel is formed between the operating element and the airflow generating wafer.

22. The semiconductor device according to claim 13, wherein a first air opening is formed at the top of the airflow generating wafer, and a second air opening is formed at the bottom of the airflow generating wafer.

23. The semiconductor device according to claim 13, Wherein the airflow generating wafer includes a membrane structure configured to be actuated to generate a plurality of air pulses at an ultrasonic frequency, and the airflow is composed of the plurality of air pulses; Wherein the plurality of air pulses generate a net air movement or a net airflow in a single direction.

24. The semiconductor device according to claim 13, Wherein the airflow generating wafer includes a membrane structure, and the membrane structure includes a pair of flaps, and the pair of flaps includes a first flap and a second flap disposed opposite to each other.

25. The semiconductor device according to claim 13, Wherein the airflow generating wafer includes a membrane structure; Wherein the membrane structure is actuated by a modulation drive signal to perform a common-mode movement; Wherein the membrane structure is actuated by a demodulation drive signal to perform a differential-mode movement to form a ventilation opening.

26. The semiconductor device according to claim 13, Wherein the airflow generating wafer includes a membrane structure and an actuator configured to actuate the membrane structure; Wherein the actuator includes a first electrode and a second electrode, the first electrode receives a modulation drive signal, and the second electrode receives a demodulation drive signal.

27. An airflow generating package, comprising: A finned heat conducting element, wherein the finned heat conducting element is disposed on a heat source; A first airflow generating wafer, disposed on a first side of the finned heat conducting element and configured to generate an airflow and direct the airflow inwardly; and A second airflow generating wafer, disposed on a second side of the finned heat conducting element and configured to generate the airflow and direct the airflow outwardly; Wherein the airflow flows through the finned heat conducting element, and the airflow is used to dissipate the heat of the heat source.

28. The airflow generating package according to claim 27, further comprising: Wherein each of the first airflow generating wafers and the second airflow generating wafers includes a membrane structure, the membrane structure includes a pair of flaps, and the pair of flaps includes a first flap and a second flap disposed opposite to each other; Wherein the pair of flaps operates at an ultrasonic frequency to generate the airflow.

29. The airflow generating package according to claim 27, further comprising a covering structure, wherein a first air opening is formed on the covering structure.

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