Image sensor having nano-photon lens array and electronic device including same

Abstract

There is provided an image sensor including: a sensor substrate including a plurality of unit pixel patterns, the plurality of unit pixel patterns including a first pixel, a second pixel, a third pixel, and a fourth pixel; and a nano-photon lens array including a plurality of unit superpatterns, the plurality of unit superpatterns including a first super region, a second super region, a third super region, and a fourth super region, each of the first to fourth super regions including a plurality of nano-structures, the plurality of nanostructures are configured to color-separate light incident on each unit superpattern in the nano-photon lens array, and to converge the color-separated light onto the first to fourth pixels, and the plurality of nanostructures are arranged such that color separation and convergence of light occur independently in each unit superpattern without producing optical exchange between the plurality of unit superpatterns.

Description

Cross - reference to Related Applications

[0001] This application claims priority to Korean Patent Application No. 10 - 2024 - 0003123, filed with the Korean Intellectual Property Office on January 8, 2024, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] The present disclosure relates to an image sensor including a nano - photonic lens array and an electronic device including the image sensor. Background Art

[0003] An image sensor can sense the color of incident light by using color filters. However, since the color filters absorb light of colors other than the desired color light, the light utilization efficiency of the color filters may be low. For example, in the case of using red - green - blue (RGB) color filters, only 1 / 3 of the incident light passes through the color filters, and the other part of the incident light (i.e., 2 / 3 of the incident light) is absorbed. Therefore, the light utilization efficiency is only about 33%. Thus, in a color display device or a color image sensor, most of the light loss occurs in the color filters.

[0004] In addition, an image sensor according to the related art has a structure in which pixels that sense light of different colors are periodically arranged. Therefore, the same color information cannot be obtained from each area on the image sensor. As a result, a resolution decrease may occur due to undersampling, and artifacts may be generated during image processing for reconstructing the lost color information. Summary of the Invention

[0005] Provided is an image sensor including a nano - photonic lens array and having improved optical efficiency, and an electronic device including the image sensor.

[0006] Provided is an image sensor including a nano - photonic lens array configured not to require demosaicing during image processing, and an electronic device including the image sensor.

[0007] Additional aspects will be set forth in part in the following description, and in part will become apparent from the description, or may be learned by practice of the exemplary embodiments of the present disclosure.

[0008] According to an aspect of an example embodiment, an image sensor is provided, including: a sensor substrate including a plurality of unit pixel patterns, the plurality of unit pixel patterns including a first pixel, a second pixel, a third pixel, and a fourth pixel configured to sense light, the plurality of unit pixel patterns being two-dimensionally arranged in a first direction and a second direction; and a nanophotonic lens array including a plurality of unit superpatterns, the plurality of unit superpatterns including a first superregion, a second superregion, a third superregion, and a fourth superregion respectively corresponding to the first pixel, the second pixel, the third pixel, and the fourth pixel, the plurality of unit superpatterns being two-dimensionally arranged in the first direction and the second direction, wherein each of the first superregion, the second superregion, the third superregion, and the fourth superregion includes a plurality of nanostructures configured to perform color separation on light incident on each of the plurality of unit superpatterns included in the nanophotonic lens array and converge the color-separated light onto the first pixel, the second pixel, the third pixel, and the fourth pixel, wherein, in each of the plurality of unit superpatterns, a distribution of cross-sectional areas of the plurality of nanostructures is asymmetric with respect to a center of each of the plurality of unit superpatterns in the first direction, the second direction, a first diagonal direction, and a second diagonal direction, and wherein, in each of the plurality of unit superpatterns, a distribution of cross-sectional areas of the plurality of nanostructures in the first superregion and a distribution of cross-sectional areas of the plurality of nanostructures in the fourth superregion are rotationally symmetric with respect to a center of each of the plurality of unit superpatterns at an angle of 180°.

[0009] Heights, positions, and periods of the plurality of nanostructures included in the first superregion, the second superregion, the third superregion, and the fourth superregion may be equal to each other.

[0010] The distribution of cross-sectional areas of the plurality of nanostructures in the first superregion, the distribution of cross-sectional areas of the plurality of nanostructures in the second superregion, the distribution of cross-sectional areas of the plurality of nanostructures in the third superregion, and the distribution of cross-sectional areas of the plurality of nanostructures in the fourth superregion may be determined such that color separation and convergence of light occur independently in each of the plurality of unit superpatterns without light exchange between the plurality of unit superpatterns.

[0011] The distribution of cross-sectional areas of the plurality of nanostructures in the first superregion may be asymmetric with respect to a center of the first superregion in the first direction, the second direction, the first diagonal direction, and the second diagonal direction, and the distribution of cross-sectional areas of the plurality of nanostructures in the fourth superregion may be asymmetric with respect to a center of the fourth superregion in the first direction, the second direction, the first diagonal direction, and the second diagonal direction.

[0012] Among the plurality of nanostructures in the first super-region, the phase delay of the light transmitted by the nanostructures adjacent to the second super-region and the phase delay of the light transmitted by the nanostructures adjacent to the third super-region can be greater than the phase delay of the light transmitted by other nanostructures, and among the plurality of nanostructures in the fourth super-region, the phase delay of the light transmitted by the nanostructures adjacent to the second super-region and the phase delay of the light transmitted by the nanostructures adjacent to the third super-region can be greater than the phase delay of the light transmitted by other nanostructures.

[0013] Among the plurality of pairs of two nanostructures facing each other in the second direction with respect to the horizontal center line passing through the center of the first super-region in the first direction, the cross-sectional areas of at least one pair of nanostructures can be different from each other. Among the plurality of pairs of two nanostructures facing each other in the first direction with respect to the vertical center line passing through the center of the first super-region in the second direction, the cross-sectional areas of at least one pair of nanostructures can be different from each other. Among the plurality of pairs of two nanostructures facing each other with respect to the first diagonal line passing through the center of the first super-region, the cross-sectional areas of at least one pair of nanostructures can be different from each other. Among the plurality of pairs of two nanostructures facing each other with respect to the second diagonal line passing through the center of the first super-region, the cross-sectional areas of at least one pair of nanostructures can be different from each other, and the cross-sectional areas of two nanostructures adjacent to another unit super-pattern different from the unit super-pattern including the first super-region and facing each other based on the second diagonal line can be equal to each other.

[0014] Among the plurality of pairs of two nanostructures facing each other in the second direction with respect to the horizontal center line passing through the center of the fourth super-region in the first direction, the cross-sectional areas of at least one pair of nanostructures can be different from each other. Among the plurality of pairs of two nanostructures facing each other in the first direction with respect to the vertical center line passing through the center of the fourth super-region in the second direction, the cross-sectional areas of at least one pair of nanostructures can be different from each other. Among the plurality of pairs of two nanostructures facing each other with respect to the first diagonal line passing through the center of the fourth super-region, the cross-sectional areas of at least one pair of nanostructures can be different from each other, and among the plurality of pairs of two nanostructures facing each other with respect to the second diagonal line passing through the center of the fourth super-region, the cross-sectional areas of at least one pair of nanostructures can be different from each other.

[0015] The cross-sectional areas of two nanostructures adjacent to another unit super-pattern different from the unit super-pattern including the fourth super-region and facing each other based on the second diagonal line can be equal to each other.

[0016] In the second super-region, based on the center of the second super-region, the distribution of the cross-sectional areas of the plurality of nanostructures may be symmetric in the first diagonal direction and asymmetric in the first direction, the second direction, and the second diagonal direction, and in the third super-region, based on the center of the third super-region, the distribution of the cross-sectional areas of the plurality of nanostructures may be symmetric in the first diagonal direction and asymmetric in the first direction, the second direction, and the second diagonal direction.

[0017] Among the plurality of nanostructures in the second super-region, the phase delay of the light transmitted by the nanostructures adjacent to the first super-region and the phase delay of the light transmitted by the nanostructures adjacent to the fourth super-region may be greater than the phase delay of the light transmitted by the other nanostructures, and among the plurality of nanostructures in the third super-region, the phase delay of the light transmitted by the nanostructures adjacent to the first super-region and the phase delay of the light transmitted by the nanostructures adjacent to the fourth super-region may be greater than the phase delay of the light transmitted by the other nanostructures.

[0018] In the second super-region, the cross-sectional areas of two nanostructures facing each other with respect to the first diagonal passing through the center of the second super-region may be equal to each other.

[0019] Among the plurality of pairs of two nanostructures facing each other in the second direction with respect to the horizontal center line passing through the center of the second super-region in the first direction, the cross-sectional areas of at least one pair of nanostructures may be different from each other. Among the plurality of pairs of two nanostructures facing each other in the first direction with respect to the vertical center line passing through the center of the second super-region in the second direction, the cross-sectional areas of at least one pair of nanostructures may be different from each other, and among the plurality of pairs of two nanostructures facing each other with respect to the second diagonal passing through the center of the second super-region, the cross-sectional areas of at least one pair of nanostructures may be different from each other.

[0020] In the third super-region, the cross-sectional areas of two nanostructures facing each other with respect to the first diagonal passing through the center of the third super-region may be equal to each other. Among the plurality of pairs of two nanostructures facing each other in the second direction with respect to the horizontal center line passing through the center of the third super-region in the first direction, the cross-sectional areas of at least one pair of nanostructures may be different from each other. Among the plurality of pairs of two nanostructures facing each other in the first direction with respect to the vertical center line passing through the center of the third super-region in the second direction, the cross-sectional areas of at least one pair of nanostructures may be different from each other, and among the plurality of pairs of two nanostructures facing each other with respect to the second diagonal passing through the center of the third super-region, the cross-sectional areas of at least one pair of nanostructures may be different from each other.

[0021] In a unit superpattern, the phase delay of light transmitted by nanostructures at the central portion of the unit superpattern can be configured to be greater than the phase delay of light transmitted by nanostructures directly adjacent to another unit superpattern.

[0022] A plurality of nanostructures can be configured to perform color separation on light incident on each unit superpattern in a nanophotonic lens array, and converge light in a first band onto a first pixel and a fourth pixel, converge light in a second band onto a second pixel, and converge light in a third band onto a third pixel. In a unit pixel pattern, the second pixel and the third pixel can be arranged in a first diagonal direction, and the first pixel and the fourth pixel can be arranged in a second diagonal direction intersecting the first diagonal direction. In a unit superpattern, a second superregion and a third superregion can be arranged in the first diagonal direction, and a first superregion and a fourth superregion can be arranged in the second diagonal direction.

[0023] The image sensor may further include a plurality of isolation patterns on the upper surface of the nanophotonic lens array, wherein each of the plurality of isolation patterns faces a first superregion, a second superregion, a third superregion, and a fourth superregion included in a corresponding unit superpattern among the plurality of unit superpatterns.

[0024] Each of the plurality of isolation patterns can have a flat upper surface, an irregular and non-uniform upper surface, or a convex upper surface.

[0025] In each unit pixel pattern among the plurality of unit pixel patterns, the image sensor can be configured to: generate a luminance signal by summing outputs from the first pixel, the second pixel, the third pixel, and the fourth pixel, generate a first color signal by subtracting the outputs from the first pixel and the fourth pixel from the output from the third pixel, and generate a second color signal by subtracting the outputs from the first pixel and the fourth pixel from the output from the second pixel.

[0026] The image sensor may further be configured to: convert the luminance signal, the first color signal, and the second color signal into digital signals, selectively generate image data having one of a plurality of digital image formats based on the digitized luminance signal, first color signal, and second color signal, and output the image data to the outside of the image sensor.

[0027] According to another aspect of the exemplary embodiment, an electronic device is provided, including: a lens assembly configured to form an optical image of an object; an image sensor configured to convert the optical image formed by the lens assembly into an electrical signal; and a processor configured to process the electrical signal generated by the image sensor, wherein the image sensor includes: a sensor substrate including a plurality of unit pixel patterns, the plurality of unit pixel patterns including a first pixel, a second pixel, a third pixel, and a fourth pixel that sense light, the plurality of unit pixel patterns being two-dimensionally arranged in a first direction and a second direction; and a nanophotonic lens array including a plurality of unit superpatterns, the plurality of unit superpatterns including a first superregion, a second superregion, a third superregion, and a fourth superregion corresponding to the first pixel, the second pixel, the third pixel, and the fourth pixel, respectively, the plurality of unit superpatterns being two-dimensionally arranged in the first direction and the second direction, wherein each of the first superregion, the second superregion, the third superregion, and the fourth superregion includes a plurality of nanostructures configured to perform color separation on light incident on each of the plurality of unit superpatterns in the nanophotonic lens array and converge the color-separated light onto the first pixel, the second pixel, the third pixel, and the fourth pixel, wherein, in each of the plurality of unit superpatterns, the distribution of the cross-sectional areas of the plurality of nanostructures is asymmetric with respect to the center of each of the plurality of unit superpatterns in the first direction, the second direction, a first diagonal direction, and a second diagonal direction, and wherein, in each of the plurality of unit superpatterns, the distribution of the cross-sectional areas of the plurality of nanostructures in the first superregion and the distribution of the cross-sectional areas of the plurality of nanostructures in the fourth superregion are rotationally symmetric with respect to the center of each of the plurality of unit superpatterns at an angle of 180°.

[0028] According to another aspect of the exemplary embodiment, an image sensor is provided, including: a sensor substrate including a plurality of unit pixel patterns, the plurality of unit pixel patterns including a first pixel, a second pixel, a third pixel, and a fourth pixel configured to sense light, the plurality of unit pixel patterns being two-dimensionally arranged in a first direction and a second direction; and a nanophotonic lens array including a plurality of unit superpatterns, the plurality of unit superpatterns including a first superregion, a second superregion, a third superregion, and a fourth superregion respectively corresponding to the first pixel, the second pixel, the third pixel, and the fourth pixel, the plurality of unit superpatterns being two-dimensionally arranged in the first direction and the second direction, wherein each of the first superregion, the second superregion, the third superregion, and the fourth superregion includes a plurality of nanostructures configured to perform color separation on light incident on each of the plurality of unit superpatterns included in the nanophotonic lens array and converge the color-separated light onto the first pixel, the second pixel, the third pixel, and the fourth pixel, wherein, in each of the plurality of unit superpatterns, the distribution of the cross-sectional areas of the plurality of nanostructures is asymmetric with respect to the center of each of the plurality of unit superpatterns in the first direction, the second direction, a first diagonal direction, and a second diagonal direction, and wherein, based on the distribution of the cross-sectional areas of the plurality of nanostructures in the first superregion, the distribution of the cross-sectional areas of the plurality of nanostructures in the second superregion, the distribution of the cross-sectional areas of the plurality of nanostructures in the third superregion, and the distribution of the cross-sectional areas of the plurality of nanostructures in the fourth superregion, color separation and convergence of light occur independently in each of the plurality of unit superpatterns without light exchange between the plurality of unit superpatterns. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The above and other aspects, features, and advantages of the exemplary embodiments of the present disclosure will become more apparent from the following description in conjunction with the accompanying drawings, in which:

[0030] Figure 1 is a schematic block diagram of an image sensor according to an exemplary embodiment;

[0031] Figure 2 is a diagram showing an example of pixel arrangement in a pixel array of an image sensor;

[0032] Figure 3A and Figure 3B are cross-sectional views schematically showing the structure of a pixel array in an image sensor according to an exemplary embodiment;

[0033] Figure 4A schematically shows Figure 3A and Figure 3B a plan view of the pixel arrangement of a sensor substrate in a pixel array of

[0034] Figure 4B schematically shows Figure 3A and Figure 3B a plan view of another pixel arrangement of a sensor substrate in a pixel array of

[0035] Figure 5 shows Figure 3A and Figure 3B a plan view of an example of an arrangement of a plurality of nanostructures in a unit superpattern in a nanophotonic lens array of

[0036] Figure 6 is a diagram showing a plurality of different nanostructures indicated by reference numerals, which are arranged in a first super-region to a fourth super-region of a unit superpattern in a nanophotonic lens array;

[0037] Figure 7 is a distribution diagram showing the phase profile of blue light that has passed through a nanophotonic lens array;

[0038] Figure 8 shows along Figure 7 a graph of an example of the phase profile of blue light on a cross-section taken along line A1 - A1' of

[0039] Figure 9 is a distribution diagram showing an example of the phase profile of green light that has passed through a nanophotonic lens array;

[0040] Figure 10A shows along Figure 9 a graph of an example of the phase profile of green light on a cross-section taken along line A2 - A2' of

[0041] Figure 10B shows along Figure 9 a graph of an example of the phase profile of green light on a cross-section taken along line A3 - A3' of

[0042] Figure 11 is a distribution diagram showing the phase profile of red light that has passed through a nanophotonic lens array;

[0043] Figure 12 shows along Figure 11 a graph of an example of the phase profile of red light on a cross-section taken along line A4 - A4' of

[0044] Figure 13 is a graph showing the light utilization efficiency of an image sensor according to an embodiment and the light utilization efficiency of an image sensor according to a related example;

[0045] Figure 14is a plan view showing an example of the arrangement of a plurality of nanostructures in a unit superpattern of a nanophotonic lens array according to another exemplary embodiment;

[0046] Figure 15A and Figure 15B is a cross-sectional view schematically showing the structure of a pixel array in an image sensor according to another exemplary embodiment;

[0047] Figure 16 is a cross-sectional view schematically showing the structure of a pixel array in an image sensor according to another exemplary embodiment;

[0048] Figure 17 is a cross-sectional view schematically showing the structure of a pixel array in an image sensor according to another exemplary embodiment;

[0049] Figure 18 is a cross-sectional view schematically showing the structure of a pixel array in an image sensor according to another exemplary embodiment;

[0050] Figure 19 is a cross-sectional view schematically showing the structure of a pixel array in an image sensor according to another exemplary embodiment;

[0051] Figures 20 to 22 is a diagram showing an example of various pixel arrangements in a pixel array of an image sensor according to another exemplary embodiment;

[0052] Figure 23 is a flowchart schematically showing image processing according to an exemplary embodiment;

[0053] Figure 24 is a diagram showing Figure 23 an example of image processing performed by an image sensor in preprocessing;

[0054] Figure 25A 、 Figure 25B and Figure 25C is a diagram showing Figure 24 an example of an image format of;

[0055] Figure 26 is a diagram showing Figure 23 another example of image processing in preprocessing;

[0056] Figure 27 is a block diagram of an electronic device including an image sensor according to an exemplary embodiment;

[0057] Figure 28 is Figure 27 a block diagram of a camera module in;

[0058] Figure 29is a block diagram of an electronic device including a multi-camera module; and

[0059] Figure 30 is Figure 29 a detailed block diagram of the multi-camera module in the electronic device of Detailed Description of the Invention

[0060] Now, embodiments will be described in detail with reference to the accompanying drawings, in which like reference numerals refer to like elements throughout. In this regard, the exemplary embodiments may have different forms and should not be construed as limited to the descriptions set forth herein. Accordingly, the exemplary embodiments are described below only by referring to the drawings to explain various aspects. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Expressions such as "at least one of..." modify the entire list of elements when following the list of elements, rather than modifying individual elements in the list.

[0061] Hereinafter, an image sensor including a nanophotonic lens array and an electronic device including the image sensor will be described in detail with reference to the accompanying drawings. The exemplary embodiments of the present disclosure can be variously modified and can be embodied in many different forms. In the drawings, like reference numerals denote like components, and for ease of explanation, the sizes of the components in the drawings may be enlarged.

[0062] When a layer, film, region, or panel is referred to as being "on" another element, it can be directly on / under / left / right of another layer or substrate, or there may also be an intermediate layer.

[0063] It will be understood that although terms such as "first", "second", etc. may be used herein to describe various components, these components should not be limited by these terms. These terms are only used to distinguish components from each other. These terms do not limit the materials or structures of the components from being different from each other.

[0064] Expressions in the singular form encompass the plural form unless they have a clearly different meaning in the context. It will also be understood that when a part is referred to as "including" another component, the part may not exclude other components, but may further include other components, unless the context otherwise indicates.

[0065] In addition, terms such as "unit", "module", etc. provided herein indicate units that perform functions or operations, and can be implemented by hardware, software, or a combination of hardware and software.

[0066] The use of terms such as "above" and similar indicative terms can correspond to both the singular form and the plural form.

[0067] In addition, the steps of all the methods described herein may be executed in any suitable order, unless otherwise indicated herein or the context otherwise clearly dictates the contrary. Further, the use of all exemplary terms (e.g., etc.) is only for describing the technical spirit in detail, and the scope of the rights is not limited by these terms, unless the context is limited by the claims.

[0068] Figure 1 is a schematic block diagram of an image sensor 1000 according to an embodiment. Referring to Figure 1 , the image sensor 1000 may include a pixel array 1100, a timing controller (T / C) 1010, a row decoder 1020, and an output circuit 1030. The image sensor 1000 may be a charge-coupled device (CCD) image sensor or a complementary metal-oxide semiconductor (CMOS) image sensor.

[0069] The pixel array 1100 includes pixels two-dimensionally arranged in a plurality of rows and columns. The row decoder 1020 may select one row in the pixel array 1100 in response to a row address signal output from the timing controller 1010. The output circuit 1030 may output a photosensitive signal from a plurality of pixels arranged in the selected row in units of columns. To this end, the output circuit 1030 may include a column decoder and an analog-to-digital converter (ADC). For example, the output circuit 1030 may include a plurality of ADCs respectively arranged in multiple columns between the column decoder and the pixel array 1100, or one ADC provided at the output terminal of the column decoder. The timing controller 1010, the row decoder 1020, and the output circuit 1030 may be implemented as one chip, or implemented as separate chips. A processor for processing the image signal output from the output circuit 1030 may be implemented as one chip with the timing controller 1010, the row decoder 1020, and the output circuit 1030.

[0070] The pixel array 1100 may include a plurality of pixels that sense light of different wavelengths. The pixel arrangement may be implemented in various ways. Figure 2 is a diagram showing an example of the pixel arrangement in the pixel array of the image sensor 1000. Specifically, Figure 2 shows the arrangement of the Bayer pattern commonly used in the image sensor 1000.

[0071] Referring to Figure 2, a unit pixel pattern includes four quadrant regions, and the first quadrant to the fourth quadrant can be a blue pixel B, a green pixel G, a red pixel R, and a green pixel G respectively. The unit pixel pattern is two-dimensionally arranged repetitively along a first direction (X direction) and a second direction (Y direction) perpendicular to the first direction. For example, in a 2×2 array of unit pixel patterns, two green pixels G are arranged in one diagonal direction, and one blue pixel B and one red pixel R are arranged in the other diagonal direction. In the entire pixel arrangement, a first row in which a plurality of green pixels G and a plurality of blue pixels B are alternately arranged along the first direction and a second row in which a plurality of red pixels R and a plurality of green pixels G are alternately arranged along the first direction are repetitively arranged in the second direction. The pixel array 1100 can have various arrangement patterns other than the Bayer pattern. Hereinafter, an example in which the pixel array 1100 of the image sensor 1000 has Figure 2 the Bayer pattern structure shown is described.

[0072] Figure 3A and Figure 3B are cross-sectional views schematically showing the structure of the pixel array 1100 in the image sensor 1000 according to an exemplary embodiment. Figure 3A shows a cross-section of the pixel array 1100 taken along the first direction (X direction), and Figure 3B shows a cross-section of the pixel array 1100 taken along the first direction (X direction) at a position different from that of Figure 3A in the second direction (Y direction). Referring to Figure 3A and Figure 3B , the pixel array 1100 can include a sensor substrate 110, a spacer layer 120 on the sensor substrate 110, and a nanophotonic lens array 130 on the spacer layer 120.

[0073] Figure 4A is a plan view schematically showing the pixel arrangement of the sensor substrate 110 in Figure 3A and Figure 3B . Referring to Figure 4A , the sensor substrate 110 can include a plurality of pixels that sense incident light. For example, the sensor substrate 110 can include a plurality of first pixels 111, a plurality of second pixels 112, a plurality of third pixels 113, and a plurality of fourth pixels 114 that convert incident light into an electrical signal and generate an image signal.

[0074] One first pixel 111, one second pixel 112, one third pixel 113, and one fourth pixel 114 arranged in a group as a 2×2 array can form a unit pixel pattern. In the sensor substrate 110, a plurality of unit pixel patterns each including the first pixel 111, the second pixel 112, the third pixel 113, and the fourth pixel 114 can be periodically repeated and two-dimensionally arranged in a first direction (X direction) and a second direction (Y direction). For example, a plurality of first pixels 111 and a plurality of second pixels 112 can be alternately arranged in the first direction, and a plurality of third pixels 113 and a plurality of fourth pixels 114 can be alternately arranged in the first direction at different positions in a section perpendicular to the first direction in the second direction. In addition, a plurality of second pixels 112 and a plurality of third pixels 113 can be arranged in a first diagonal direction, and a plurality of first pixels 111 and a plurality of fourth pixels 114 can be arranged in a second diagonal direction intersecting the first diagonal direction. In the example, the first pixel 111 and the fourth pixel 114 can be green pixels that sense green light, the second pixel 112 can be a blue pixel that senses blue light, and the third pixel 113 can be a red pixel that senses red light.

[0075] In the example, each of the first to fourth pixels 111, 112, 113, and 114 can include a photosensitive unit. For example, each of the first to fourth pixels 111, 112, 113, and 114 can include a photodiode. In this case, each of the first to fourth photosensitive units 111, 112, 113, and 114 can output only one kind of signal.

[0076] Figure 4B schematically shows Figure 3A and Figure 3B a plan view of the sensor substrate 110 in the pixel array 1100 of. Refer to Figure 4B , in another example, each of the first to fourth pixels 111, 112, 113, and 114 can include a plurality of photosensitive units that independently sense incident light. In this case, each of the first to fourth pixels 111, 112, 113, and 114 can include a plurality of photodiodes. For example, each of the first to fourth pixels 111, 112, 113, and 114 can include first to fourth photosensitive units C1, C2, C3, and C4. The first to fourth photosensitive units C1, C2, C3, and C4 can be two-dimensionally arranged in the first direction and the second direction. For example, in each of the first to fourth pixels 111, 112, 113, and 114, the first to fourth photosensitive units C1, C2, C3, and C4 can be arranged as a 2×2 array.

[0077] In addition, each of the first to fourth pixels 111, 112, 113, and 114 may include an isolation DTI that electrically isolates a plurality of photosensitive units from each other. The isolation DTI may have, for example, a deep trench isolation structure. The deep trench may be filled with air or an electrically insulating material. The isolation DTI may extend in a first direction and a second direction so as to divide each of the first to fourth pixels 111, 112, 113, and 114 into four parts. The first to fourth photosensitive units C1, C2, C3, and C4 in each of the first to fourth pixels 111, 112, 113, and 114 may be isolated from each other by the isolation DTI. The isolation DTI extending in the first direction and the isolation DTI extending in the second direction may cross each other at the center of each of the first to fourth pixels 111, 112, 113, and 114.

[0078] In addition, the isolation DTI may be disposed between adjacent pixels among the first to fourth pixels 111, 112, 113, and 114 in the first direction and the second direction. Accordingly, the first to fourth pixels 111, 112, 113, and 114 may be isolated from each other due to the isolation DTI. The isolation DTI extending in the first direction and the isolation DTI extending in the second direction may cross each other at the center of a unit pixel pattern including the first to fourth pixels 111, 112, 113, and 114.

[0079] Figure 4B An example in which each of the first to fourth pixels 111, 112, 113, and 114 includes four photosensitive units is shown, but the embodiment is not limited thereto, and four or more independent photosensitive units may be grouped and two-dimensionally arranged. For example, each of the first to fourth pixels 111, 112, 113, and 114 may include a plurality of independent photosensitive units grouped and arranged in a 3×3 array or a 4×4 array. Hereinafter, for ease of description, an example in which each of the first to fourth pixels 111, 112, 113, and 114 includes photosensitive units arranged in a 2×2 array will be described.

[0080] When each of the first to fourth pixels 111, 112, 113, and 114 includes a plurality of photosensitive units, an autofocus signal can be obtained based on the difference between output signals from adjacent photosensitive units. For example, the autofocus signal in the first direction can be generated based on the difference between the output signals from the first photosensitive unit C1 and the second photosensitive unit C2, the difference between the output signals from the third photosensitive unit C3 and the fourth photosensitive unit C4, or the difference between the sum of the output signals from the first photosensitive unit C1 and the third photosensitive unit C3 and the sum of the output signals from the second photosensitive unit C2 and the fourth photosensitive unit C4. In addition, the autofocus signal in the second direction can be generated based on the difference between the output signals from the first photosensitive unit C1 and the third photosensitive unit C3, the difference between the output signals from the second photosensitive unit C2 and the fourth photosensitive unit C4, or the difference between the sum of the output signals from the first photosensitive unit C1 and the second photosensitive unit C2 and the sum of the output signals from the third photosensitive unit C3 and the fourth photosensitive unit C4.

[0081] A general RGB image signal can be obtained in two different ways. First, each of the first to fourth photosensitive units C1, C2, C3, and C4 of the first to fourth pixels 111, 112, 113, and 114 can be used as an independent channel. In this case, the first pixel 111 can include four independent green channels, the second pixel 112 can include four independent blue channels, the third pixel 113 can include four independent red channels, and the fourth pixel 114 can include four independent green channels. One unit pixel pattern can output 16 independent signals. During image signal processing, the processor can be configured to perform operations such as noise reduction, color correction, etc. by separately using the signals output from the plurality of photosensitive units, and generate a general RGB image. In an example, the processor can be included in the image sensor 1000, or can be a component included in an electronic device including the image sensor 1000.

[0082] According to another exemplary embodiment, a combining mode operation can be performed to increase sensitivity in low light environments. The combining mode is an image processing method in which the outputs from multiple independent photosensitive units are summed or the outputs from multiple pixels of the same color are summed. For example, an RGB image can be obtained by summing the output signals from the first photosensitive unit to the fourth photosensitive units C1, C2, C3, and C4 in the combining mode. For example, a first green image signal can be generated by summing the output signals from the first photosensitive unit to the fourth photosensitive units C1, C2, C3, and C4 of the first pixel 111, a blue image signal can be generated by summing the output signals from the first photosensitive unit to the fourth photosensitive units C1, C2, C3, and C4 of the second pixel 112, a red image signal can be generated by summing the output signals from the first photosensitive unit to the fourth photosensitive units C1, C2, C3, and C4 of the third pixel 113, and a second green image signal can be generated by summing the output signals from the first photosensitive unit to the fourth photosensitive units C1, C2, C3, and C4 of the fourth pixel 114. The processor can be configured to perform image signal processing on the summed image signals and generate an RGB image.

[0083] The combining mode can be performed in software using a processor or in hardware using the output circuit 1030 of the image sensor. For example, in the case of software, the output circuit 1030 of the image sensor 1000 can output the signals from multiple photosensitive units individually. The processor can be configured to perform calculations during image signal processing to sum the output signals from multiple photosensitive units in one pixel of one unit pixel pattern among the signals of the image sensor 1000. In the case of hardware, when the image sensor 1000 receives a combining mode instruction from the processor or other control circuit, the output circuit 1030 can be switched so that the output signals from the photosensitive units in one pixel of one unit pixel pattern are combined and output through one output line. In the normal mode, different from the combining mode, the output circuit 1030 of the image sensor 1000 can be switched to output the signals from multiple photosensitive units individually.

[0084] Return reference Figure 3A and Figure 3B, the image sensor 1000 may include a spacer layer 120 disposed on the sensor substrate 110. The spacer layer 120 is disposed between the sensor substrate 110 and the nanophotonic lens array 130 to maintain a constant distance between the sensor substrate 110 and the nanophotonic lens array 130. The spacer layer 120 may include a material transparent to visible light, such as a dielectric material (e.g., polymethyl methacrylate (PMMA), siloxane spin-on glass (SOG), silicon oxide (SiO2), silicon nitride (SiN4), aluminum oxide (Al2O3), etc.) having a refractive index lower than that of the nanostructure NP described later and a low absorption rate in the visible light band.

[0085] The nanophotonic lens array 130 may be disposed on the spacer layer 120. During the process of forming the nanophotonic lens array 130, an etch stop layer may also be disposed between the spacer layer 120 and the nanophotonic lens array 130 to protect the spacer layer 120. The nanophotonic lens array 130 may include a plurality of first super-regions 131 corresponding to the plurality of first pixels 111, a plurality of second super-regions 132 corresponding to the plurality of second pixels 112, a plurality of third super-regions 133 corresponding to the plurality of third pixels 113, and a plurality of fourth super-regions 134 corresponding to the plurality of fourth pixels 114. The first super-region 131 may be arranged to face the first pixel 111 in the third direction (Z direction), the second super-region 132 may be arranged to face the second pixel 112 in the third direction, the third super-region 133 may be arranged to face the third pixel 113 in the third direction, and the fourth super-region 134 may be arranged to face the fourth pixel 114 in the third direction.

[0086] Therefore, the first to fourth super-regions 131, 132, 133, and 134 may be two-dimensionally arranged in the same manner as the first to fourth pixels 111, 112, 113, and 114 described above with reference to Figure 4A For example, the plurality of first super-regions 131 and the plurality of second super-regions 132 may be alternately arranged in the first direction, and the plurality of third super-regions 133 and the plurality of fourth super-regions 134 may be alternately arranged in the first direction in another cross-section at different positions in the second direction perpendicular to the first direction. In addition, one first super-region 131, one second super-region 132, one third super-region 133, and one fourth super-region 134 arranged in a 2×2 array as a group may form a unit super-pattern.

[0087] According to an exemplary embodiment, the nanophotonic lens array 130 may be configured to perform color separation on incident light. For example, the nanophotonic lens array 130 may separate light in a first band (e.g., green light), light in a second band (e.g., blue light), and light in a third band (e.g., red light) from the incident light and allow the separated light to travel in different channels. Additionally, the nanophotonic lens array 130 may be configured to act as a lens that converges the light in the first band, the second band, and the third band after color separation onto pixels. For example, the nanophotonic lens array 130 may be configured to converge the light in the first band of the incident light onto the first pixel 111 and the fourth pixel 114, the light in the second band onto the second pixel 112, and the light in the third band onto the third pixel 113.

[0088] Furthermore, in the nanophotonic lens array 130 according to the exemplary embodiment, color separation and convergence of light may occur independently in each unit superpattern. For example, light incident on a unit superpattern is only color-separated within that unit superpattern and only converges onto the pixels corresponding to that unit superpattern, and each unit superpattern does not affect the color separation and convergence of light in another adjacent unit superpattern. For example, in the light incident on a unit superpattern, the light in the first band only converges onto the first pixel 111 and the fourth pixel 114 corresponding to the first superregion 131 and the fourth superregion 134 of that unit superpattern, respectively, and does not converge onto the first pixel and the fourth pixel corresponding to another adjacent unit superpattern. Similarly, in the light incident on a unit superpattern, the light in the second band only converges onto the second pixel 112 corresponding to the second superregion 132 of that unit superpattern and does not converge onto the second pixel corresponding to another adjacent unit superpattern, and the light in the third band only converges onto the third pixel 113 corresponding to the third superregion 133 of that unit superpattern and does not converge onto the third pixel corresponding to another adjacent unit superpattern. Therefore, adjacent unit superpatterns are optically isolated from each other, and no light exchange or energy exchange occurs between adjacent unit superpatterns.

[0089] To this end, the nanophotonic lens array 130 may include a plurality of nanostructures NP periodically arranged according to a certain rule. In addition, the nanophotonic lens array 130 may further include a dielectric layer DL filled between the plurality of nanostructures NP spaced apart from each other. In order for the nanophotonic lens array 130 to perform the above functions, the plurality of nanostructures NP of the nanophotonic lens array 130 may have various configurations. For example, the plurality of nanostructures NP may be arranged such that the phase of the light transmitted through the nanophotonic lens array 130 changes according to the position on the nanophotonic lens array 130. The phase profile of the transmitted light achieved by the nanophotonic lens array 130 may be determined according to the cross-sectional size (e.g., width or diameter), cross-sectional shape and height of each nanostructure NP, as well as the spacing, arrangement period (or pitch) and arrangement type of the plurality of nanostructures NP. In addition, the behavior of the light passing through the nanophotonic lens array 130 may be determined according to the phase profile of the transmitted light.

[0090] Each of the nanostructures NP may have a size smaller than the wavelength of visible light. The nanostructures NP may have a size smaller than, for example, the wavelength of blue light. For example, the cross-sectional width (or diameter) of the nanostructures NP may be less than 400 nm, 300 nm or 200 nm, and may be greater than about 80 nm. The height of the nanostructures NP may be from about 500 nm to about 1500 nm, and may be greater than the cross-sectional width of the nanostructures NP.

[0091] The nanostructures NP may include materials having a relatively high refractive index compared to the surrounding materials and a relatively low absorption rate in the visible light band. For example, the nanostructures NP may include c-Si, p-Si, a-Si and group III-V compound semiconductors (gallium phosphide (GaP), gallium nitride (GaN), gallium arsenide (GaAs), etc.), silicon carbide (SiC), titanium oxide (TiO2), SiN3, zinc sulfide (ZnS), zinc selenide (ZnSe), Si3N4, and / or combinations thereof. The periphery of the nanostructures NP may be filled with a dielectric layer DL having a relatively low refractive index compared to the nanostructures NP and a relatively low absorption rate in the visible light band. For example, the dielectric layer DL may be filled with PMMA, SOG, SiO2, Si3N4, Al2O3, air, etc.

[0092] The refractive index of the nanostructure NP with respect to light having a wavelength of about 630 nm can be about 2.0 or greater, and the refractive index of the dielectric layer DL with respect to light having a wavelength of about 630 nm can be about 1.0 to about 2.0 or less. Further, the difference between the refractive index of the nanostructure NP and the refractive index of the dielectric layer DL can be greater than or equal to about 0.5. The nanostructure NP having a refractive index difference from the refractive index of the surrounding material can change the phase of the light passing through the nanostructure NP. This is caused by the phase delay due to the sub-wavelength shape size of the nanostructure NP, and the degree of the phase delay can be determined by the detailed shape size and the arrangement shape of the nanostructure NP.

[0093] Figure 5 shows Figure 3A and Figure 3B an example of the arrangement of a plurality of nanostructures NP in a unit superpattern in the nanophotonic lens array 130, and Figure 6 is a diagram showing a plurality of different nanostructures indicated by reference numerals, and these nanostructures NP are arranged in the first to fourth superregions 131, 132, 133, and 134 of a unit superpattern in the nanophotonic lens array 130. Additionally, in Figure 5 and Figure 6 , grids indicated by dashed lines are provided in the first superregion 131, the second superregion 132, the third superregion 133, and the fourth superregion 134 to clearly indicate the positions of the nanostructures NP, which are not related to the actual structures of the first superregion 131, the second superregion 132, the third superregion 133, and the fourth superregion 134.

[0094] Refer to Figure 5 , a unit superpattern 130U in the nanophotonic lens array 130 can include a first superregion 131, a second superregion 132, a third superregion 133, and a fourth superregion 134 arranged in a 2×2 array as a group. In a unit superpattern 130U, the second superregion 132 and the third superregion 133 can be arranged in the first diagonal DG1 direction, and the first superregion 131 and the fourth superregion 134 can be arranged in the second diagonal DG2 direction. Figure 5 shows an example of a unit superpattern 130U, but the nanophotonic lens array 130 can include a plurality of unit superpatterns 130U arranged two-dimensionally and periodically in the first direction and the second direction. The plurality of unit superpatterns 130U can each correspond to one of the plurality of unit pixel patterns of the sensor substrate 110. The pattern period or lattice constant of the plurality of unit superpatterns 130U in the nanophotonic lens array 130 can be equal to the pattern period or lattice constant of the plurality of unit pixel patterns in the sensor substrate 110.

[0095] The first super-region 131, the second super-region 132, the third super-region 133, and the fourth super-region 134 may each include a plurality of nanostructures NP having different cross-sectional areas from each other. In Figure 5 the example of, each of the first super-region 131, the second super-region 132, the third super-region 133, and the fourth super-region 134 includes nine nanostructures NP arranged two-dimensionally as a 3×3 array, but is not limited thereto. For example, each of the first super-region 131, the second super-region 132, the third super-region 133, and the fourth super-region 134 may include a plurality of nanostructures NP arranged two-dimensionally as a 4×4 array, a 5×5 array, or a larger array.

[0096] In the first super-region 131, the second super-region 132, the third super-region 133, and the fourth super-region 134, the materials, cross-sectional shapes, heights, positions, periods, and arrangement types of the plurality of nanostructures NP are the same, but the cross-sectional areas of the nanostructures NP may be selected to be different from each other. For example, in the first super-region 131, the second super-region 132, the third super-region 133, and the fourth super-region 134, the distributions of the cross-sectional areas of the plurality of nanostructures NP may be different from each other. Figure 5 An example is shown in which the plurality of nanostructures NP have a circular cross-section in a plane parallel to the first direction and the second direction (i.e., the plurality of nanostructures NP have a cylindrical shape), but the embodiment is not limited thereto. In a plane parallel to the first direction and the second direction, the plurality of nanostructures NP may have a circular cross-section, an elliptical cross-section, or a polygonal cross-section (e.g., a rectangular cross-section). Hereinafter, the cross-sectional area of each of the plurality of nanostructures NP may be defined as the area of the cross-section of each of the plurality of nanostructures NP along a plane parallel to the first direction and the second direction.

[0097] In each of the first super-region 131, the second super-region 132, the third super-region 133, and the fourth super-region 134, the distribution of the cross-sectional areas of the plurality of nanostructures NP may be selected in consideration of the above-described phase delay function of the nanophotonic lens array 130. For example, the plurality of nanostructures NP may be arranged such that color separation and convergence of light can be independently performed in each unit super-pattern 130U without light exchange or energy exchange occurring between the plurality of unit super-patterns 130U. In particular, the distribution of the cross-sectional areas or the distribution of the phase delay of the plurality of nanostructures NP in each of the first super-region 131, the second super-region 132, the third super-region 133, and the fourth super-region 134 may be determined such that color separation and convergence of light can be independently performed in each unit super-pattern 130U without generating light exchange or energy exchange between the plurality of unit super-patterns 130U.

[0098] For example, the first super-region 131 may be configured to guide the light in the second wavelength band in the incident light in the +X direction to the second pixel 112 corresponding to the second super-region 132, and guide the light in the third wavelength band in the incident light in the -Y direction to the third pixel 113 corresponding to the third super-region 133. The first super-region 131 does not guide the incident light in the -X direction or the +Y direction. For this purpose, among the plurality of nanostructures NP in the first super-region 131, the phase delay of the light transmitted through the nanostructures NP closer to the second super-region 132 in the same unit super-pattern and the nanostructures NP closer to the third super-region 133 in the same unit super-pattern may be greater than the phase delay of the light transmitted through the other nanostructures NP in the same unit super-pattern.

[0099] Reference Figure 5 and Figure 6 , the first super-region 131 may include a first nanostructure NP1, a second nanostructure NP2, a third nanostructure NP3, a fourth nanostructure NP4, a fifth nanostructure NP5, a sixth nanostructure NP6, and a seventh nanostructure NP7. In Figure 6 , the nanostructures indicated by the same reference numerals may have the same cross-sectional area. The nanostructures indicated by different reference numerals are independent of each other and may have the same or different cross-sectional areas from each other according to the design. In the first super-region 131, the phase delay of the light transmitted through the first nanostructure NP1 at the center and the fifth nanostructure NP5, the sixth nanostructure NP6, and the seventh nanostructure NP7 adjacent to the second super-region 132 and the third super-region 133 in the same unit super-pattern may be greater than the phase delay of the light transmitted through the second nanostructure NP2, the third nanostructure NP3, and the fourth nanostructure NP4 adjacent to another unit super-pattern different from the unit super-pattern including the first super-region 131.

[0100] Figure 5An example is shown in which the cross-sectional areas of the first nanostructure NP1, the fifth nanostructure NP5, the sixth nanostructure NP6, and the seventh nanostructure NP7 are larger than the cross-sectional areas of the second nanostructure NP2, the third nanostructure NP3, and the fourth nanostructure NP4. However, the embodiments are not limited thereto. The phase delay is generally expressed as a value wrapped by 2π. For example, a phase delay greater than 2π can be expressed as the remaining value of 2π. For example, 2.5π can be equal to 0.5π, and 5π can be equal to π. Thus, within the range of 0 to 2π, the phase delay is proportional to the cross-sectional area of the nanostructure, but the phase delay of a nanostructure with a cross-sectional area larger than the cross-sectional area corresponding to 2π can be wrapped by 2π and can be less than 2π. When the cross-sectional areas of the second nanostructure NP2, the third nanostructure NP3, and / or the fourth nanostructure NP4 may be too small to achieve a predetermined phase delay and it may be difficult to fabricate the nanophotonic lens array 130, the cross-sectional areas of the second nanostructure NP2, the third nanostructure NP3, and / or the fourth nanostructure NP4 can be increased in order to achieve the phase delay obtained by adding 2π to the target phase delay. In this case, the cross-sectional areas of the second nanostructure NP2, the third nanostructure NP3, and the fourth nanostructure NP4 can be larger than the cross-sectional area of at least one of the first nanostructure NP1, the fifth nanostructure NP5, the sixth nanostructure NP6, and the seventh nanostructure NP7.

[0101] Since the first super-region 131 guides the light of the second wavelength band in the +X direction, guides the light of the third wavelength band in the -Y direction, and does not guide the light in the -X direction, the distribution of the cross-sectional areas or phase delays of the first to seventh nanostructures NP1 to NP7 in the first super-region 131 may not be symmetric in any direction with respect to the center of the first super-region 131. For example, the distribution of the cross-sectional areas or phase delays of the first to seventh nanostructures NP1 to NP7 in the first super-region 131 is not symmetric in all of the first direction, the second direction, the first diagonal DG1 direction, and the second diagonal DG2 direction with respect to the center of the first super-region 131. Therefore, in the first super-region 131, among a plurality of pairs of two nanostructures facing each other in the first direction based on the horizontal center line passing through the center of the first super-region 131, at least one pair of nanostructures may have different cross-sectional areas; among a plurality of pairs of two nanostructures facing each other in the second direction based on the vertical center line passing through the center of the first super-region 131, at least one pair of nanostructures may have different cross-sectional areas; among a plurality of pairs of two nanostructures facing each other with respect to the first diagonal DG1 passing through the center of the first super-region 131, at least one pair of nanostructures may have different cross-sectional areas; and among a plurality of pairs of two nanostructures facing each other with respect to the second diagonal DG2 passing through the center of the first super-region 131, at least one pair of nanostructures may have different cross-sectional areas.

[0102] For example, the third nanostructure NP3 and the sixth nanostructure NP6 that face each other in the second direction with respect to the first nanostructure NP1 may have different cross-sectional areas, and the fourth nanostructure NP4 and the seventh nanostructure NP7 that face each other in the second direction with respect to the fifth nanostructure NP5 may have different cross-sectional areas. In addition, the third nanostructure NP3 and the fifth nanostructure NP5 that face each other in the first direction with respect to the first nanostructure NP1 may have different cross-sectional areas, and the fourth nanostructure NP4 and the seventh nanostructure NP7 that face each other in the first direction with respect to the sixth nanostructure NP6 may have different cross-sectional areas. Further, the third nanostructure NP3 and the fifth nanostructure NP5, the second nanostructure NP2 and the seventh nanostructure NP7, and the third nanostructure NP3 and the sixth nanostructure NP6 that face each other based on the first diagonal DG1 may have different cross-sectional areas, and the fifth nanostructure NP5 and the sixth nanostructure NP6 that face each other based on the second diagonal DG2 may have different cross-sectional areas. However, two third nanostructures NP3 that are adjacent to another unit superpattern different from the unit superpattern including the first superregion 131 and face each other based on the second diagonal DG2 may have the same cross-sectional area, and two fourth nanostructures NP4 that are adjacent to another unit superpattern different from the unit superpattern including the first superregion 131 and face each other based on the second diagonal DG2 may have the same cross-sectional area.

[0103] The second superregion 132 may be configured to guide light in the first band of the incident light in the -X direction to the first pixel 111 corresponding to the first superregion 131, guide the light in the -Y direction to the fourth pixel 114 corresponding to the fourth superregion 134, and guide light in the third band in the -X direction and the -Y direction to the third pixel 113 corresponding to the third superregion 133. The second superregion 132 does not guide the incident light in the +X direction or the +Y direction. To this end, among the plurality of nanostructures NP in the second superregion 132, the nanostructures NP closer to the first superregion 131 in the same unit superpattern and the nanostructures NP closer to the fourth superregion 134 in the same unit superpattern may be formed to have a phase delay greater than that of other nanostructures NP.

[0104] Reference Figure 5 and Figure 6 , the second superregion 132 may include an eighth nanostructure NP8, a ninth nanostructure NP9, a tenth nanostructure NP 10 , an eleventh nanostructure NP 11 , a twelfth nanostructure NP 12 and a thirteenth nanostructure NP 13. In the second super-region 132, the eighth nanostructure NP8 at the center, and the twelfth nanostructure NP adjacent to the first super-region 131 and the fourth super-region 134 in the same unit super-pattern 12 and the thirteenth nanostructure NP 13 may have a phase delay greater than that of the ninth nanostructure NP9, the tenth nanostructure NP 10 and the eleventh nanostructure NP 11 adjacent to another unit super-pattern different from the unit super-pattern including the second super-region 132. Figure 5 An example is shown in which the cross-sectional areas of the eighth nanostructure NP8, the twelfth nanostructure NP 12 and the thirteenth nanostructure NP 13 are larger than those of the ninth nanostructure NP9, the tenth nanostructure NP 10 and the eleventh nanostructure NP 11 . However, as described above, when the cross-sectional areas of the ninth nanostructure NP9, the tenth nanostructure NP 10 and the eleventh nanostructure NP 11 are too small to achieve a phase delay and it is difficult to fabricate the nanophotonic lens array 130, the cross-sectional areas of the ninth nanostructure NP9, the tenth nanostructure NP 10 and the eleventh nanostructure NP 11 can be larger than the cross-sectional area of at least one of the eighth nanostructure NP8, the twelfth nanostructure NP 12 and the thirteenth nanostructure NP 13 .

[0105] Since the second super-region 132 guides light of the first band in the -X direction and the -Y direction and does not guide light in the +X direction and the +Y direction, the distribution of the cross-sectional areas or phase delays of the eighth nanostructure NP8 to the thirteenth nanostructure NP 13 is symmetric with respect to the first diagonal DG1 direction and asymmetric in other directions. For example, the eighth nanostructure NP8 to the thirteenth nanostructure NP in the second super-region 132 13The distribution of the cross-sectional area or phase delay may be asymmetric with respect to the center of the second super-region 132 in the first direction, the second direction, and the second diagonal DG2 direction. Thus, in the second super-region 132, among multiple pairs of two nanostructures that face each other in the second direction based on the horizontal center line passing through the center of the second super-region 132 in the first direction, at least one pair of nanostructures may have different cross-sectional areas. Among multiple pairs of two nanostructures that face each other in the first direction based on the vertical center line passing through the center of the second super-region 132 in the second direction, at least one pair of nanostructures may have different cross-sectional areas. Two nanostructures facing each other with respect to the first diagonal DG1 passing through the center of the second super-region 132 may have the same cross-sectional area, and among multiple pairs of two nanostructures that face each other with respect to the second diagonal DG2 passing through the center of the second super-region 132, at least one pair of nanostructures may have different cross-sectional areas.

[0106] For example, two tenth nanostructures NP facing each other based on the first diagonal DG1 10 may have the same cross-sectional area, two eleventh nanostructures NP 11 may have the same cross-sectional area, and two twelfth nanostructures NP 12 may have the same cross-sectional area. The tenth nanostructure NP 10 and the twelfth nanostructure NP 12 facing each other based on the second diagonal DG2, as well as the ninth nanostructure NP9 and the thirteenth nanostructure NP 13 may have different cross-sectional areas. In addition, the tenth nanostructure NP 10 and the twelfth nanostructure NP 12 facing each other in the second direction with respect to the eighth nanostructure NP8 may have different cross-sectional areas, and the eleventh nanostructure NP 12 and the thirteenth nanostructure NP 11 facing each other in the second direction with respect to the twelfth nanostructure NP 13 may have different cross-sectional areas. In addition, the twelfth nanostructure NP 12 and the tenth nanostructure NP 10 facing each other in the second direction with respect to the eighth nanostructure NP8 may have different cross-sectional areas, and the thirteenth nanostructure NP 12 and the eleventh nanostructure NP 13 facing each other in the first direction with respect to the twelfth nanostructure NP 11 may have different cross-sectional areas.

[0107] The third super-region 133 can be configured to direct light in a first wavelength band in the incident light in the +Y direction to the first pixel 111 corresponding to the first super-region 131, direct the light in the +X direction to the fourth pixel 114 corresponding to the fourth super-region 134, and direct light in a second wavelength band in the +X direction and the +Y direction to the second pixel 112 corresponding to the second super-region 132. The third super-region 133 does not direct the incident light in the -X direction or the -Y direction. To this end, among the plurality of nanostructures NP in the third super-region 133, the nanostructures NP closer to the first super-region 131 in the same unit super-pattern and the nanostructures NP closer to the fourth super-region 134 in the same unit super-pattern can be formed to achieve a phase delay greater than that of other nanostructures NP.

[0108] Reference Figure 5 and Figure 6 , the third super-region 133 may include a fourteenth nanostructure NP 14 , a fifteenth nanostructure NP 15 , a sixteenth nanostructure NP 16 , a seventeenth nanostructure NP 17 , an eighteenth nanostructure NP 18 and a nineteenth nanostructure NP 19 . In the third super-region 133, the fourteenth nanostructure NP 14 at the center, and the eighteenth nanostructure NP 18 and the nineteenth nanostructure NP 19 adjacent to the first super-region 131 and the fourth super-region 134 in the same unit super-pattern may have a phase delay greater than that of the fifteenth nanostructure NP 15 , the sixteenth nanostructure NP 16 and the seventeenth nanostructure NP 17 adjacent to another unit super-pattern different from the unit super-pattern including the third super-region 133. Figure 5 shows an example in which the cross-sectional areas of the fourteenth nanostructure NP 14 , the eighteenth nanostructure NP 18 and the nineteenth nanostructure NP 19 are larger than the cross-sectional areas of the fifteenth nanostructure NP 15 , the sixteenth nanostructure NP 16 and the seventeenth nanostructure NP 17 . However, as described above, when the cross-sectional areas of the fifteenth nanostructure NP 15 , the sixteenth nanostructure NP 16 and the seventeenth nanostructure NP 17 are too small to achieve a phase delay and it is difficult to fabricate the nanophotonic lens array 130, the fifteenth nanostructure NP 15, the sixteenth nanostructure NP 16 and the seventeenth nanostructure NP 17 may have a cross-sectional area greater than that of at least one of the fourteenth nanostructure NP 14 , the eighteenth nanostructure NP 18 and the nineteenth nanostructure NP 19 .

[0109] Since the third super-region 133 guides light of the first band in the +X direction and the +Y direction and does not guide light in the -X direction and the -Y direction, the cross-sectional area or the distribution of the phase delay of the fourteenth nanostructure NP 14 to the nineteenth nanostructure NP 19 in the third super-region 133 is symmetric with respect to the first diagonal DG1 direction and asymmetric in other directions. For example, the cross-sectional area or the distribution of the phase delay of the fourteenth nanostructure NP 14 to the nineteenth nanostructure NP 19 in the third super-region 133 may be asymmetric with respect to the center of the third super-region 133 in the first direction, the second direction, and the second diagonal DG2 direction. Therefore, in the third super-region 133, among multiple pairs of two nanostructures facing each other in the second direction based on the horizontal center line passing through the center of the third super-region 133 in the first direction, at least one pair of nanostructures may have different cross-sectional areas; among multiple pairs of two nanostructures facing each other in the first direction based on the vertical center line passing through the center of the third super-region 133 in the second direction, at least one pair of nanostructures may have different cross-sectional areas; two nanostructures facing each other with respect to the first diagonal DG1 passing through the center of the third super-region 133 may have the same cross-sectional area; and among multiple pairs of two nanostructures facing each other with respect to the second diagonal DG2 passing through the center of the third super-region 133, at least one pair of nanostructures may have different cross-sectional areas.

[0110] For example, two sixteenth nanostructure NPs 16 facing each other with respect to the first diagonal DG1 17 may have the same cross-sectional area, two seventeenth nanostructure NPs 18 may have the same cross-sectional area, and two eighteenth nanostructure NPs 16 and the eighteenth nanostructure NP 18 may have the same cross-sectional area. The sixteenth nanostructure NP 15 and the nineteenth nanostructure NP 19 facing each other with respect to the second diagonal DG2 may have different cross-sectional areas. In addition, with respect to the fourteenth nanostructure NP 14The sixteenth nanostructures NP facing each other in the second direction 16 and the eighteenth nanostructures NP 18 may have different cross-sectional areas, and relative to the eighteenth nanostructures NP 18 The seventeenth nanostructures NP facing each other in the second direction 17 and the nineteenth nanostructures NP 19 may have different cross-sectional areas. In addition, relative to the fourteenth nanostructures NP 14 The sixteenth nanostructures NP facing each other in the first direction 16 and the eighteenth nanostructures NP 18 may have different cross-sectional areas, and relative to the eighteenth nanostructures NP 18 The seventeenth nanostructures NP facing each other in the first direction 17 and the nineteenth nanostructures NP 19 may have different cross-sectional areas.

[0111] The fourth super-region 134 may be configured to guide the light in the second band of the incident light in the +Y direction to the second pixel 112 corresponding to the second super-region 132, and guide the light in the third band of the incident light in the -X direction to the third pixel 113 corresponding to the third super-region 133. The fourth super-region 134 does not guide the incident light in the +X direction or the -Y direction. For this purpose, among the plurality of nanostructures NP in the fourth super-region 134, the nanostructures NP closer to the second super-region 132 in the same unit super-pattern and the nanostructures NP closer to the third super-region 133 in the same unit super-pattern may be formed to have a phase delay greater than that of other nanostructures NP.

[0112] Reference Figure 5 and Figure 6 , the fourth super-region 134 may include the twentieth nanostructures NP 20 to the twenty-sixth nanostructures NP 26 . In the fourth super-region 134, the twentieth nanostructures NP at the center 20 , and the twenty-fourth nanostructures NP adjacent to the second super-region 132 and the third super-region 133 in the same unit super-pattern 24 , the twenty-fifth nanostructures NP 25 and the twenty-sixth nanostructures NP 26 may have a phase delay greater than that of the twenty-first nanostructures NP 21 , the twenty-second nanostructures NP 22 and the twenty-third nanostructures NP 23 adjacent to another unit super-pattern different from the unit super-pattern including the fourth super-region 134. Figure 5shows an example where the cross-sectional area of the twentieth nanostructure NP 20 , the twenty-fourth nanostructure NP 24 , the twenty-fifth nanostructure NP 25 and the twenty-sixth nanostructure NP 26 is larger than that of the twenty-first nanostructure NP 21 , the twenty-second nanostructure NP 22 and the twenty-third nanostructure NP 23 . However, as described above, when the cross-sectional areas of the twenty-first nanostructure NP 21 , the twenty-second nanostructure NP 22 and the twenty-third nanostructure NP 23 are too small to achieve phase delay and it is difficult to fabricate the nanophotonic lens array 130, the cross-sectional areas of the twenty-first nanostructure NP 21 , the twenty-second nanostructure NP 22 and the twenty-third nanostructure NP 23 can be larger than that of at least one of the twentieth nanostructure NP 20 , the twenty-fourth nanostructure NP 24 , the twenty-fifth nanostructure NP 25 and the twenty-sixth nanostructure NP 26 .

[0113] Since the fourth super-region 134 guides the light of the second band in the +Y direction, guides the light of the third band in the -X direction, and does not guide the light in the +X direction and the -Y direction, the distribution of the cross-sectional areas or phase delays of the twentieth nanostructure NP 20 to the twenty-sixth nanostructure NP 26 in the fourth super-region 134 may not be symmetric in any direction with respect to the center of the fourth super-region 134. For example, the twentieth nanostructure NP 20 to the twenty-sixth nanostructure NP 26The distribution of the cross-sectional area or phase delay is asymmetric with respect to the center of the fourth super-region 134 in all directions, namely the first direction, the second direction, the first diagonal direction DG1, and the second diagonal direction DG2. Therefore, in the fourth super-region 134, among multiple pairs of two nanostructures that face each other in the second direction based on the horizontal center line passing through the center of the fourth super-region 134 in the first direction, at least one pair of nanostructures can have different cross-sectional areas; among multiple pairs of two nanostructures that face each other in the first direction based on the vertical center line passing through the center of the fourth super-region 134 in the second direction, at least one pair of nanostructures can have different cross-sectional areas; among multiple pairs of two nanostructures that face each other with respect to the first diagonal DG1 passing through the center of the fourth super-region 134, at least one pair of nanostructures can have different cross-sectional areas; and among multiple pairs of two nanostructures that face each other with respect to the second diagonal DG2 passing through the center of the fourth super-region 134, at least one pair of nanostructures can have different cross-sectional areas.

[0114] For example, with respect to the twentieth nanostructure NP 20 the twenty-second nanostructure NP 22 and the twenty-fourth nanostructure NP 24 that face each other in the second direction can have different cross-sectional areas, and with respect to the twenty-fifth nanostructure NP 25 the twenty-third nanostructure NP 23 and the twenty-sixth nanostructure NP 26 that face each other in the second direction can have different cross-sectional areas. With respect to the twentieth nanostructure NP 20 the twenty-second nanostructure NP 22 and the twenty-fifth nanostructure NP 25 that face each other in the first direction can have different cross-sectional areas, and with respect to the twenty-fourth nanostructure NP 24 the twenty-third nanostructure NP 23 and the twenty-sixth nanostructure NP 26 that face each other in the first direction can have different cross-sectional areas. In addition, the twenty-second nanostructure NP 22 and the twenty-fourth nanostructure NP 24 the twenty-first nanostructure NP 21 and the twenty-sixth nanostructure NP 26 the twenty-second nanostructure NP 22 and the twenty-fifth nanostructure NP 25 that face each other based on the first diagonal DG1 can have different cross-sectional areas, and the twenty-fourth nanostructure NP 24and the twenty-fifth nanostructure NP 25 may have different cross-sectional areas. However, two twenty-second nanostructure NPs that are adjacent to another unit superpattern different from the unit superpattern including the fourth super-region 134 and face each other based on the second diagonal DG2 22 may have the same cross-sectional area, and two twenty-third nanostructure NPs that are adjacent to another unit superpattern different from the unit superpattern including the fourth super-region 134 and face each other based on the second diagonal DG2 23 may have the same cross-sectional area.

[0115] In a unit superpattern 130U, the nanostructure NPs arranged at the central part of the unit superpattern 130U may be formed to achieve a greater phase delay compared to the nanostructure NPs arranged at the edge (peripheral part) of the unit superpattern 130U. In particular, the nanostructure NPs directly adjacent to another unit superpattern 130U may be formed to achieve the minimum phase delay compared to other nanostructure NPs.

[0116] In addition, the first super-region 131 and the fourth super-region 134 may be asymmetric with respect to the first diagonal DG1 passing through the center of the unit superpattern 130U. For example, among multiple pairs of nanostructures in the first super-region 131 and the fourth super-region 134 that face each other with respect to the first diagonal DG1 passing through the center of the unit superpattern 130U, at least one pair of nanostructures may have different cross-sectional areas. In Figure 5 the example, the fifth nanostructure NP5 of the first super-region 131 and the twenty-fourth nanostructure NP of the fourth super-region 134 that face each other based on the first diagonal DG1 24 may have different cross-sectional areas, and the sixth nanostructure NP6 of the first super-region 131 and the twenty-fifth nanostructure NP of the fourth super-region 134 25 may have different cross-sectional areas. Other nanostructures in the first super-region 131 and other nanostructures in the fourth super-region 134 that face each other with respect to the first diagonal DG1 passing through the center of the unit superpattern 130U may have the same cross-sectional area. In the entire unit superpattern 130U, the distribution of the cross-sectional areas of the nanostructures arranged in the unit superpattern 130U may be asymmetric in all directions of the first direction, the second direction, the first diagonal DG1 direction, and the second diagonal DG2 direction with respect to the center of the unit superpattern 130U.

[0117] In addition, the first super-region 131 and the fourth super-region 134 may have a rotational symmetry relationship of 180° with respect to the center of the unit super-pattern 130U. Specifically, the distribution of the cross-sectional areas or phase delays of the plurality of nanostructures NP in the first super-region 131 and the distribution of the cross-sectional areas or phase delays of the plurality of nanostructures NP in the fourth super-region 134 may have a rotational symmetry relationship of 180° with respect to the center of the unit super-pattern 130U. For example, when the first super-region 131 or the fourth super-region 134 is rotated by 180° around the point where the vertex of the first super-region 131 meets the vertex of the fourth super-region 134, the shapes and cross-sectional areas of the nanostructures in the first super-region 131 and the shapes and cross-sectional areas of the nanostructures in the fourth super-region 134 may be the same as each other. In this case, in the Figure 5 example, the fifth nanostructure NP5 of the first super-region 131 and the twenty-fifth nanostructure NP of the fourth super-region 134 25 may have the same cross-sectional area, and the sixth nanostructure NP6 of the first super-region 131 and the twenty-fourth nanostructure NP of the fourth super-region 134 24 may have the same cross-sectional area.

[0118] Figure 7 is a distribution diagram showing the phase profile of the blue light that has passed through the nanophotonic lens array 130, and Figure 8 is a graph showing an example of the phase profile of the blue light on the cross-section taken along the line Figure 7 A1 - A1' of. Referring to Figure 7 and Figure 8 , the blue light that has passed through the nanophotonic lens array 130 may have a phase profile that is maximum at the center of the second super-region 132 and decreases away from the center of the second super-region 132. For example, at the position immediately after passing through the nanophotonic lens array 130, that is, on the lower surface of the nanophotonic lens array 130, the phase of the blue light is maximum at the center of the second super-region 132 and may decrease in the form of concentric circles away from the center of the second super-region 132. In addition, the phase profile of the blue light is continuous within one unit super-pattern, but may be discontinuous at the boundary between two adjacent unit super-patterns.

[0119] Then, in a unit superpattern, among the incident light on the second superregion 132 and the incident light on the first superregion 131, the third superregion 133, and the fourth superregion 134 surrounding the second superregion 132, blue light can converge onto the second pixel 112 corresponding to the second superregion 132. For example, the blue light incident on a unit superpattern can converge onto the second pixel 112 corresponding to the second superregion 132 of the unit superpattern. However, because the phase profile of the blue light is discontinuous at the boundary between two adjacent unit superpatterns, the blue light incident on a unit superpattern may not converge onto the second pixel 112 corresponding to another unit superpattern adjacent to the above unit superpattern.

[0120] Figure 9 is a distribution diagram showing an example of the phase profile of the green light that has passed through the nanophotonic lens array 130, Figure 10A is showing along Figure 9 a line graph showing an example of the phase profile of the green light on the cross-section taken along line A2 - A2', and Figure 10B is showing along Figure 9 a line graph showing an example of the phase profile of the green light on the cross-section taken along line A3 - A3'. Referring to Figure 9 , Figure 10A and Figure 10B , the green light that has passed through the nanophotonic lens array 130 can have a phase profile that is maximum at the centers of the first superregion 131 and the fourth superregion 134 and decreases away from the centers of the first superregion 131 and the fourth superregion 134. For example, at the position immediately after passing through the nanophotonic lens array 130, that is, on the lower surface of the nanophotonic lens array 130, the phase of the green light is maximum at the centers of the first superregion 131 and the fourth superregion 134, and can decrease in the form of concentric circles away from the centers of the first superregion 131 and the fourth superregion 134. In addition, the phase profile of the green light is continuous within a unit superpattern, but may be discontinuous at the boundary between two adjacent unit superpatterns.

[0121] Then, the green light incident on a unit superpattern can converge onto the first pixel 111 corresponding to the first superregion 131 of the unit superpattern and the fourth pixel 114 corresponding to the fourth superregion 134 of the unit superpattern. However, because the phase profile of the green light is discontinuous at the boundary between two adjacent unit superpatterns, the green light incident on a unit superpattern may not converge onto the first pixel 111 and the fourth pixel 114 corresponding to another unit superpattern adjacent to the above unit superpattern.

[0122] Figure 11is a distribution diagram showing the phase profile of red light that has passed through the nanophotonic lens array 130, and Figure 12 is a graph showing an example of the phase profile of red light on a cross section taken along Figure 11 line A4 - A4' of. Referring to Figure 11 and Figure 12 , the red light that has passed through the nanophotonic lens array 130 may have a phase profile that is maximum at the center of the third super region 133 and decreases away from the center of the third super region 133. For example, at a position immediately after passing through the nanophotonic lens array 130, that is, on the lower surface of the nanophotonic lens array 130, the phase of the red light is maximum at the center of the third super region 133 and may decrease in the form of concentric circles away from the center of the third super region 133. In addition, the phase profile of the red light is continuous within one unit super pattern, but may be discontinuous at the boundary between two adjacent unit super patterns.

[0123] Then, the red light incident on one unit super pattern may converge onto the third pixel 113 corresponding to the third super region 133 of that unit super pattern. However, because the phase profile of the red light is discontinuous at the boundary between two adjacent unit super patterns, the red light incident on one unit super pattern may not converge onto the third pixel 113 corresponding to another unit super pattern adjacent to the above unit super pattern.

[0124] Figure 13 is a graph showing the light utilization efficiency of the image sensor 1000 according to an embodiment and the light utilization efficiency of the image sensor according to a related example. In Figure 13 , the curves denoted as "POR R", "POR G", and "POR B" indicate the quantum efficiencies with respect to red light, green light, and blue light in an image sensor according to a related example (where a color filter and a microlens are arranged on a sensor substrate). In the related example, it is assumed that one microlens is arranged with respect to one unit pixel pattern of the sensor substrate. In addition, in Figure 13 , the curves denoted as "MP R", "MP G", and "MP B" indicate the quantum efficiencies with respect to red light, green light, and blue light in the image sensor 1000 according to an exemplary embodiment. Referring to Figure 13 , the nanophotonic lens array 130 performs color separation on the incident light and converges the color - separated light onto each pixel without absorbing or reflecting the incident light. Therefore, compared with the image sensor according to the related example, the image sensor 1000 according to the exemplary embodiment may have improved light utilization efficiency with respect to blue light, green light, and red light. Therefore, the size of one pixel of the image sensor 1000 or the size of the independent photosensitive units in the pixel may be reduced, and thus, an image sensor 1000 with a higher resolution may be provided.

[0125] In addition, according to the exemplary embodiment, there is no energy exchange or light exchange between adjacent unit super-patterns 130U in the nanophotonic lens array 130. Therefore, it is possible to reduce the degradation of spatial resolution while improving the light utilization efficiency. For example, the light that has undergone color separation and convergence in one unit super-pattern only includes the spatial information of the light incident on that unit super-pattern, and does not include the spatial information of the light incident on another adjacent unit super-pattern. Therefore, the mixing of light with different spatial information does not incident on one pixel, and thus, each pixel can output a signal with its respective spatial information.

[0126] In addition, the outputs from the pixels in the unit pixel pattern corresponding to one unit super-pattern of the nanophotonic lens array 130 can have the same spatial information regardless of color. For example, in the unit pixel pattern corresponding to one unit super-pattern, the green light signals output from the first pixel 111 and the fourth pixel 114, the blue light signal output from the second pixel 112, and the red light signal output from the third pixel 113 can have the same spatial information. In this case, all the signals of the green light signals, blue light signals, and red light signals output from all the pixels in the image sensor 1000 or the pixel array 1100 can have the spatial information related to the entire area of the image sensor 1000 or the pixel array 1100 without gaps. Therefore, in the image processing for generating an image by using the signals output from the image sensor 1000 according to the exemplary embodiment, operations such as color filter array interpolation or demosaicing for filling the empty spatial information between pixels of the same color in an image sensor having a Bayer pattern structure according to the related art can be omitted. Accordingly, the operation amount and power consumption of the image signal processor in the device including the image sensor 1000 or the processor in the image sensor 1000 can be reduced.

[0127] Figure 14 is a plan view showing an example of the arrangement of a plurality of nanostructures NP in one unit super-pattern of the nanophotonic lens array 130 according to another exemplary embodiment. Figure 14 The cross-sectional areas of the plurality of nanostructures NP in the unit super-pattern 130U' of Figure 5 can be different from the cross-sectional areas of the plurality of nanostructures NP in the unit super-pattern 130U of Figure 14 . However, the nanophotonic lens array 130 including Figures 7 to 12 the unit super-pattern 130U' can also achieve the phase profile as shown in

[0128] Even when the arrangement type or cross-sectional area distribution of the nanostructures NP changes, the conditions described above with reference to Figure 5 and Figure 6 can be satisfied. For example, in the first super-region 131 and the fourth super-region 134, the cross-sectional area distribution or phase delay distribution of the plurality of nanostructures NP may be asymmetric in the first direction, the second direction, the first diagonal DG1 direction, and the second diagonal DG2 direction with respect to the center of each super-region. In addition, the first super-region 131 and the fourth super-region 134 may have a 180° rotational symmetry relationship with respect to the center of the unit super-pattern 130U'. In the second super-region 132 and the third super-region 133, the cross-sectional area distribution or phase delay distribution of the plurality of nanostructures NP may be symmetric in the first diagonal DG1 direction with respect to the center of each super-region, and may be asymmetric in the first direction, the second direction, and the second diagonal DG2 direction.

[0129] Figure 15A and Figure 15B are cross-sectional views schematically showing the structure of a pixel array in an image sensor 1000 according to another exemplary embodiment. Referring to Figure 15A and Figure 15B , the pixel array 1100a according to another exemplary embodiment may further include a color filter array 140 disposed between the sensor substrate 110 and the spacer layer 120. The color filter array 140 may include a plurality of color filters, each of which transmits light of a specific wavelength band and absorbs light of different wavelength bands. For example, the color filter array 140 may include a first color filter 141 and a fourth color filter 144 that transmit light of a first wavelength band and absorb light of other wavelength bands, a second color filter 142 that transmits light of a second wavelength band different from the first wavelength band and absorbs light of other wavelength bands, and a third color filter 143 that transmits light of a third wavelength band different from the first wavelength band and the second wavelength band and absorbs light of other wavelength bands.

[0130] The first color filter 141 may be arranged to face the first pixel 111 in the third direction, the second color filter 142 may be arranged to face the second pixel 112 in the third direction, the third color filter 143 may be arranged to face the third pixel 113 in the third direction, and the fourth color filter 144 may be arranged to face the fourth pixel 114 in the third direction. Accordingly, the first pixel 111 may sense light of a first wavelength band passing through the corresponding first color filter 141. The second pixel 112 senses light of a second wavelength band passing through the corresponding second color filter 142, and the third pixel 113 senses light of a third wavelength band passing through the corresponding third color filter 143. The fourth pixel 114 may sense light of the first wavelength band passing through the corresponding fourth color filter 144. In an example, the first color filter 141 and the fourth color filter 144 may be green color filters that transmit green light, the second color filter 142 may be a blue color filter that transmits blue light, and the third color filter 143 may be a red color filter that transmits red light.

[0131] Since the incident light is color-separated by the nanophotonic lens array 130 to a certain extent, the absorption loss in the color filter array 140 can be relatively low even when the color filter array 140 is used. Since the nanophotonic lens array 130 and the color filter array 140 are used together, the color purity can be improved. If sufficient color separation can occur due to the nanophotonic lens array 130, the color filter array 140 can be omitted.

[0132] The first to fourth color filters 141, 142, 143, and 144 of the color filter array 140 may be formed of an organic polymer material. For example, the first to fourth color filters 141, 142, 143, and 144 may include a colorant, an adhesive resin, a polymer photoresist, etc. In this case, the spacer layer 120 may act as a planarization layer to provide a flat surface for forming the nanophotonic lens array 130 on the color filter array 140. In addition, the spacer layer 120 may include an organic polymer material suitable for stacking on the color filter array 140 formed of an organic material, and can easily form a flat surface. The organic polymer material forming the spacer layer 120 may be transparent to visible light. For example, the spacer layer 120 may include at least one organic polymer material such as epoxy resin, polyimide, polycarbonate, polyacrylate, and polymethyl methacrylate (PMMA). The spacer layer 120 may be formed on the color filter array 140 by, for example, a spin coating method, and may have a flat upper surface through heat treatment.

[0133] Figure 16 is a cross-sectional view schematically showing the structure of a pixel array in an image sensor 1000 according to another exemplary embodiment. Refer to Figure 16, the pixel array 1100b may further include a plurality of isolation patterns 151 disposed on the upper surface of the nanophotonic lens array 130 to improve optical isolation between the plurality of unit super patterns. Each of the plurality of isolation patterns 151 may be disposed on a corresponding unit super pattern among the plurality of unit super patterns of the nanophotonic lens array 130. For example, each of the plurality of isolation patterns 151 may be disposed to cover the first to fourth super regions 131, 132, 133, and 134 of the corresponding unit super pattern. Figure 16 The isolation pattern 151 covers the first super region 131 and the second super region 132, but the isolation pattern 151 may also be located in the second direction and Figure 16 The third super region 133 and the fourth super region 134 are covered on the cross section at different positions. In addition, each of the plurality of isolation patterns 151 may be isolated from an adjacent isolation pattern 151. The isolation pattern 151 may have a flat upper surface. The isolation pattern 151 may include a material having a refractive index lower than that of the nanostructure NP and transparent with respect to visible light. For example, the isolation pattern 151 may include PMMA, SOG, SiO2, Si3N4, Al2O3, etc. The thickness of each isolation pattern 151 in the third direction may be determined in consideration of the pixel size in the image sensor 1000, etc., so that sufficient optical separation may occur between the plurality of unit super patterns of the nanophotonic lens array 130.

[0134] Figure 17 is a cross-sectional view schematically showing a structure of a pixel array in an image sensor 1000 according to another example embodiment. Figure 17 According to another example embodiment, the pixel array 1100c may further include a plurality of isolation patterns 152 disposed on an upper surface of the nanophotonic lens array 130 to improve optical isolation between the plurality of unit super patterns. Figure 17 The arrangement and structure of the isolation pattern 152 may be Figure 16 The arrangement and structure of the isolation pattern 151 are the same. Figure 17 The isolation pattern 152 and Figure 16 The difference between the isolation patterns 151 and the isolation patterns 152 may be that the isolation patterns 152 may each have an irregular and non-uniform upper surface. For example, the isolation pattern 152 may be a diffusion pattern that scatters and diffuses light incident on the corresponding unit super pattern. Then, the consistency of spatial information between the signals output from the first to fourth pixels 111, 112, 113, and 114 corresponding to each unit super pattern may be improved.

[0135] Figure 18 is a cross-sectional view schematically showing a structure of a pixel array in an image sensor 1000 according to another example embodiment. Figure 18According to another example embodiment, the pixel array 1100d may further include a plurality of isolation patterns 153 disposed on an upper surface of the nanophotonic lens array 130 to improve optical isolation between the plurality of unit super patterns. Figure 18 The arrangement of the isolation pattern 153 may be Figure 16 The arrangement of the isolation patterns 151 is the same. Figure 18 The isolation pattern 153 may have a convex upper surface for converging incident light onto a corresponding unit pixel pattern among a plurality of unit pixel patterns of the sensor substrate 110. For example, the isolation pattern 153 may be a microlens converging incident light onto a corresponding unit super pattern.

[0136] Figure 19 is a cross-sectional view schematically showing a structure of a pixel array in an image sensor 1000 according to another example embodiment. Figure 19 , the pixel array 1100e may include an inorganic color filter array 140a instead of Figure 15A and Figure 15B The inorganic color filter array 140a may include a plurality of inorganic color filters having an inorganic lattice structure. Figure 19 Only the first inorganic color filter 141a corresponding to the first pixel 111 and the second inorganic color filter 142a corresponding to the second pixel 112 are shown, but the inorganic color filter array 140a can also be connected to the second pixel 112 in the second direction. Figure 19 The cross-sections at different positions include a third inorganic color filter corresponding to the third pixel 113 and a fourth inorganic color filter corresponding to the fourth pixel 114. When the pixel array 1100e includes the inorganic color filter array 140a, the spacer layer 120 may include a general transparent inorganic material (e.g., SOG, SiO2, Si3N4, Al2O3, etc.).

[0137] In addition, since the outputs from the first to fourth pixels 111, 112, 113, and 114 in one unit pixel pattern have the same spatial information, the image sensor 1000 according to the example embodiment does not need to have a pixel arrangement with a Bayer pattern structure. In the pixel arrangement of the Bayer pattern structure according to the related art, the lost spatial information is reconstructed by using the green pixel with the maximum number. However, there may be no substantial loss of spatial information in the image sensor 1000 according to the example embodiment. Therefore, the pixels may be arranged in various types according to the purpose and characteristics of the image sensor 1000 without limitation on the pixel arrangement. For example, Figures 20 to 22 is a diagram showing examples of various pixel arrangements in a pixel array of an image sensor 1000 according to another example embodiment.

[0138] refer to Figure 20, a unit pixel pattern in the pixel array may include two blue pixels B, one green pixel G, and one red pixel R. The two blue pixels B are arranged in the first diagonal direction, and the green pixel G and the red pixel R may be arranged in the second diagonal direction. The pixel array may include a plurality of unit pixel patterns having the above structure.

[0139] In this case, the two super-regions in the nanophotonic lens array 130 corresponding to the blue pixels B may follow the rules related to the cross-sectional area distribution or phase delay distribution of the nanostructures NP in the first super-region 131 and the fourth super-region 134 described above with reference to Figure 5 and Figure 6 For example, the cross-sectional area distribution of the nanostructures in the two super-regions in the nanophotonic lens array 130 corresponding to the blue pixels B may be asymmetric in all directions of the first direction, the second direction, the first diagonal direction, and the second diagonal direction. In addition, the two super-regions in the nanophotonic lens array 130 corresponding to the blue pixels B may have a 180° rotational symmetry relationship with respect to the center of the unit super-pattern.

[0140] The super-regions in the nanophotonic lens array 130 corresponding to the green pixel G and the red pixel R may follow the rules related to the cross-sectional area distribution or phase delay distribution of the nanostructures NP in the second super-region 132 and the third super-region 133 described above with reference to Figure 5 and Figure 6 For example, in the super-regions in the nanophotonic lens array 130 corresponding to the green pixel G and the red pixel R, the cross-sectional area distribution or phase delay distribution of the nanostructures may be symmetric with respect to the first diagonal direction and asymmetric in the first direction, the second direction, and the second diagonal direction with respect to the center of each super-region.

[0141] Referring to Figure 21 , a unit pixel pattern of the pixel array may include one green pixel G, one cyan pixel C, one blue pixel B, and one red pixel R. In this case, in all the super-regions in the nanophotonic lens array 130 corresponding to the green pixel G, the cyan pixel C, the blue pixel B, and the red pixel R respectively, the cross-sectional area distribution of the nanostructures may be asymmetric with respect to the first direction, the second direction, the first diagonal direction, and the second diagonal direction.

[0142] Referring to Figure 22, the pixel array may include a plurality of pixels each having a hexagonal shape. For example, a unit pixel pattern in the pixel array may include seven pixels each having a hexagonal shape. The white pixel W may be disposed at the center of the unit pixel pattern, and two green pixels G, two blue pixels B, and two red pixels R may be respectively disposed in contact with six sides of the white pixel W. For example, pixels of the same color may be disposed on two opposite sides among the six sides of the white pixel W. For example, two green pixels G may be disposed on two opposite sides of the white pixel W, two blue pixels B may be disposed on two other opposite sides of the white pixel W, and two red pixels R may be disposed on the remaining two opposite sides of the white pixel W.

[0143] As described above, the light that has undergone color separation and convergence in one unit superpattern may include only the spatial information of the light incident on the unit superpattern, and may not include the spatial information of the light incident on another adjacent unit superpattern. In addition, the color signals output from the pixels in one unit pixel pattern (e.g., one Bayer pattern) may represent the color of the entire unit pixel pattern. For example, the red light signal output from the red pixel in one unit pixel pattern may represent all the red light in the incident light incident on the unit pixel pattern. Similarly, the blue light signal output from the blue pixel may represent all the blue light in the incident light incident on the unit pixel pattern. The average value of the green light signals output from the two green pixels in one unit pixel pattern may represent all the green light in the incident light incident on the unit pixel pattern.

[0144] Therefore, even when there are positional differences between the red pixels, green pixels, and blue pixels, the red light signal, green light signal, and blue light signal may have the same spatial information. Since the spatial information is the same among the red light signal, green light signal, and blue light signal output from one unit pixel pattern, a higher-quality color image can be obtained during image processing using the output from the pixel array 1100 without performing a demosaicing process. Thus, by using the image sensor 1000 according to the exemplary embodiment, the image processing can be more simplified.

[0145] Figure 23 schematically shows a flowchart of image processing according to an exemplary embodiment. Refer to Figure 23, in operation S10, preprocessing may be performed on the image signal output from the pixel array 1100 (e.g., a Bayer pattern-based image signal). For example, in the preprocessing operation S10, black level compensation for compensating for the black level difference caused by dark current, defective pixel correction for compensating for signal loss caused by defective pixels such as dead pixels, white balance adjustment, etc. may be performed. Thereafter, digitized red image data, green image data, and blue image data may be generated. According to another exemplary embodiment, digital image data may be generated according to the image format required by another external device (e.g., a digital camera, a smart phone, a closed-circuit television (CCTV)) outside the image sensor 1000.

[0146] When the preprocessing operation (S10) is completed, in operation S11, noise may be removed from the digital image data. In the noise removal operation (S11), the original image may be estimated based on the digital image data after preprocessing, and the noise components included in the digital data may be removed.

[0147] After removing the noise, in operation S12, post-processing for improving the quality of the final image may be performed. For example, in the post-processing operation (S12), brightness adjustment for correcting over-bright or over-dark regions in the image (e.g., deblurring and high dynamic range (HDR) for removing blurred regions in the image), and color correction for adjusting colors according to the sensor characteristics of the camera to suit the characteristics of the human eye may be performed.

[0148] After generating the final image, in operation S13, the final image may be displayed on a display panel or the like, or the final image may be stored in a recording medium.

[0149] Figure 23 The preprocessing operation (S10) may be performed in a processor in the image sensor 1000. According to another exemplary embodiment, an additional image processor included in another device outside the image sensor 1000 may receive the raw image data from the image sensor 1000 and may be configured to perform the preprocessing operation (S10). In addition, the noise removal operation (S11) and the post-processing operation (S12) may be performed by an additional image processor included in another device outside the image sensor 1000.

[0150] Figure 24 is a diagram showing Figure 23 an example of the image processing performed by the image sensor 1000 in the preprocessing operation (S10). Referring to Figure 24 , analog merging may be performed on each unit pixel pattern in the pixel array 1100 to generate image data in various formats. In Figure 24In [description], a Bayer pattern as a unit pixel pattern in the pixel array 1100 having a Bayer pattern structure is indicated by bold squares. In a unit pixel pattern, the outputs from a red pixel (e.g., the third pixel 113), the outputs from two green pixels (e.g., the first pixel 111 and the fourth pixel 114), and the output from a blue pixel (e.g., the second pixel 112) are summed to generate a luminance signal Y. In addition, in a unit pixel pattern, the output from the two green pixels is subtracted from the output from the red pixel to generate a first color signal Cb, and the output from the two green pixels is subtracted from the output from the blue pixel to generate a second color signal Cr.

[0151] In Figure 24 [description], the height represents the height of a unit pixel pattern, and the width represents the width of a unit pixel pattern. In addition, in Figure 24 [description], height / 2 and width / 2 represent the height and width of each pixel, respectively. According to an exemplary embodiment, demosaicking is not performed on the outputs from the red pixel, the two green pixels, and the blue pixel, and the luminance signal Y, the first color signal Cb, and the second color signal Cr can be directly generated from the outputs from the pixels. In this case, one luminance signal Y, one first color signal Cb, and one second color signal Cr can be generated from a unit pixel pattern. Each of the luminance signal Y, the first color signal Cb, and the second color signal Cr may include spatial information related to a unit pixel pattern.

[0152] Then, the image sensor 1000 can convert the luminance signal Y, the first color signal Cb, and the second color signal Cr, which are analog signals, into digital signals, and can generate image data in various digital formats. For example, the image sensor 1000 can selectively generate image data having one of a plurality of different digital image formats (e.g., YCbCr 444 format, YCbCr 422 format, and YCbCr 420 format) according to a request from another external device including the image sensor 1000, and output the image data to the outside. Alternatively, when the external device uses only one format, the image sensor 1000 can generate image data having only a set of formats among the YCbCr 444 format, the YCbCr 422 format, and the YCbCr 420 format, and output the image data to the outside.

[0153] Referring to Figure 24The described image processing may be performed by an output circuit 1030 of, for example, an image sensor 1000. The output circuit 1030 may generate a luminance signal Y, a first color signal Cb, and a second color signal Cr as analog signals, and may convert the analog signals into digital signals. In addition, the output circuit 1030 may include a color formatter 1031 configured to selectively generate an image signal in YCbCr 4:4:4 format, YCbCr 4:2:2 format, or YCbCr 4:2:0 format by using the digitized luminance signal Y, the first color signal Cb, and the second color signal Cr.

[0154] Figure 25A , Figure 25B and Figure 25C are diagrams showing Figure 24 examples of the image formats of. Refer to Figure 25A , in the YCbCr 4:4:4 format, unit image data may include four luminance signals Y, four first color signals Cb, and four second color signals Cr. The four luminance signals Y, four first color signals Cb, and four second color signals Cr are obtained by combining the outputs from four adjacent unit pixel patterns. When the image sensor 1000 provides image data in YCbCr 4:4:4 format to an external electronic device, the external electronic device may perform additional processing on the YCbCr 4:4:4 format image data to make it suitable for use.

[0155] Refer to Figure 25B , in the YCbCr 4:2:2 format, unit image data may include four luminance signals Y, two first color signals Cb, and two second color signals Cr. In the case of the YCbCr 4:2:2 format, among the four first color signals Cb in Figure 25A the YCbCr 4:4:4 format of, two signals adjacent to each other in the horizontal direction are averaged to obtain two first color signals Cb. In addition, among the four second color signals Cr in the YCbCr 4:4:4 format, two signals adjacent to each other in the horizontal direction are averaged to obtain two second color signals Cr. The YCbCr 4:2:2 format may be mainly used for, for example, still images adopting the Joint Photographic Experts Group (JPEG) standard.

[0156] Refer to Figure 25C , in the YCbCr 4:2:0 format, unit image data may include four luminance signals Y, one first color signal Cb, and one second color signal Cr. In the case of the YCbCr 4:2:0 format, for Figure 25AThe four first color signals Cb in the YCbCr 444 format are averaged to obtain a first color signal Cb, and the four second color signals Cr in the YCbCr 444 format are averaged to obtain a second color signal Cr. The YCbCr 420 format can be mainly used, for example, in videos adopting the Moving Picture Experts Group (MPEG)-4 standard.

[0157] As described above, the image sensor 1000 can perform image processing without demosaicing. Therefore, the amount of operations for image processing can be reduced, the image processing speed can be increased, and the power consumption of the image sensor 1000 can be reduced. In addition, when the image sensor 1000 outputs image data in a specific image format through the above-described image processing, the amount of operations of the processor in an external device including the image sensor 1000 can also be reduced, and the operation speed of the external device can also be increased.

[0158] Figure 26 is a diagram showing Figure 23 another example of the image processing in the preprocessing of. In Figure 26 , the processing of generating the luminance signal Y, the first color signal Cb, and the second color signal Cr is the same as Figure 24 . Referring to Figure 26 , the output circuit 1030 may include a color converter 1032 configured to perform color conversion for generating a digitized RGB signal by using the digitized luminance signal Y, the first color signal Cb, and the second color signal Cr. Generally, the human eye has non-linear characteristics and is sensitive to luminance. Therefore, when directly converting the analog outputs from red pixels, green pixels, and blue pixels into digital signals, the colors of the generated image data may not match the colors perceived by the human eye. In addition, when generating the digitized RGB signal after converting the luminance signal Y, the first color signal Cb, and the second color signal Cr, the amount of data processing can be further reduced. The image sensor 1000 can selectively perform one of the Figure 24 and Figure 26 shown image processing according to a request from an external device. For example, when the external device requests a digitized RGB signal, the image sensor 1000 can perform the Figure 26 shown image processing.

[0159] The image sensor 1000 according to an exemplary embodiment can form a camera module together with a module lens having various functions and can be used in various electronic devices.

[0160] Figure 27 is a block diagram showing an example of an electronic device ED01 including the image sensor 1000. Referring to Figure 27, in a network environment ED00, an electronic device ED01 can communicate with another electronic device ED02 via a first network ED98 (such as a short-range wireless communication network), or can communicate with another electronic device ED04 and / or a server ED08 via a second network ED99 (such as a long-range wireless communication network). The electronic device ED01 can communicate with the electronic device ED04 via the server ED08. The electronic device ED01 may include a processor ED20, a memory ED30, an input device ED50, a sound output device ED55, a display device ED60, an audio module ED70, a sensor module ED76, an interface ED77, a haptic module ED79, a camera module ED80, a power management module ED88, a battery ED89, a communication module ED90, a subscriber identification module ED96, and / or an antenna module ED97. In the electronic device ED01, some components (such as the display device ED60) may be omitted, or other components may be added. Some components may be configured as an integrated circuit. For example, the sensor module ED76 (fingerprint sensor, iris sensor, illuminance sensor, etc.) may be embedded and implemented in the display device ED60 (display, etc.).

[0161] The processor ED20 can control one or more components (hardware, software components, etc.) of the electronic device ED01 connected to the processor ED20 by executing software (such as a program ED40), and can perform various data processing or operations. As part of the data processing or operations, the processor ED20 can load commands and / or data received from other components (such as the sensor module ED76, the communication module ED90, etc.) into the volatile memory ED32, process the commands and / or data stored in the volatile memory ED32, and store the resulting data in the non-volatile memory ED34. The non-volatile memory ED34 may include an internal memory ED36 and an external memory ED38. The processor ED20 may include a main processor ED21 (central processing unit, application processor, etc.), and an auxiliary processor ED23 (graphics processing unit, image signal processor, sensor hub processor, communication processor, etc.) that can operate independently of or together with the main processor ED21. The auxiliary processor ED23 can use less power than the main processor ED21 and can perform specific functions.

[0162] The auxiliary processor ED23 can control functions and / or states related to some components (display device ED60, sensor module ED76, communication module ED90, etc.) in the electronic device ED01 on behalf of the main processor ED21 while the main processor ED21 is in an inactive state (sleep state), or together with the main processor ED21 while the main processor ED21 is in an active state (application execution state). The auxiliary processor ED23 (image signal processor, communication processor, etc.) can be implemented as part of another component (camera module ED80, communication module ED90, etc.) related to its function.

[0163] The memory ED30 can store various data required by components of the electronic device ED01 (processor ED20, sensor module ED76, etc.). This data can include, for example, input data and / or output data related to software (program ED40, etc.) and related commands. The memory ED30 can include a volatile memory ED32 and / or a non-volatile memory ED34.

[0164] The program ED40 can be stored in the memory ED30 as software and can include an operating system ED42, middleware ED44, and / or an application ED46.

[0165] The input device ED50 can receive commands and / or data to be used in components of the electronic device ED01 (processor ED20, etc.) from the outside of the electronic device ED01 (user, etc.). The input device ED50 can include a microphone, a mouse, a keyboard, and / or a digital pen (stylus).

[0166] The sound output device ED55 can output a sound signal to the outside of the electronic device ED01. The sound output device ED55 can include a speaker and / or a receiver. The speaker can be used for general purposes such as multimedia reproduction or recording playback, and the receiver can be used to receive calls. The receiver can be coupled as part of the speaker or can be implemented as an independent device.

[0167] The display device ED60 can provide visual information to the outside of the electronic device ED01. The display device ED60 can include a display, a holographic device, or a projector, and a control circuit for controlling the corresponding device. The display device ED60 can include a touch circuit set to sense a touch and / or a sensor circuit (pressure sensor, etc.) set to measure the intensity of the force generated by the touch.

[0168] The audio module ED70 can convert sound into an electrical signal and vice versa. The audio module ED70 can obtain sound through the input device ED50, or can output sound via the sound output device ED55, and / or the microphone and / or earphone of another electronic device (such as electronic device ED02) directly or wirelessly connected to the electronic device ED01.

[0169] The sensor module ED76 can sense the operating state (power, temperature, etc.) of the electronic device ED01 or the external environmental state (user state, etc.), and can generate an electrical signal and / or data value corresponding to the sensed state. The sensor module ED76 can include a gesture sensor, a gyro sensor, a pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an infrared (IR) line sensor, a biosensor, a temperature sensor, a humidity sensor, and / or an illuminance sensor.

[0170] The interface ED77 can support one or more specified protocols that can be used to directly or wirelessly connect the electronic device ED01 to another electronic device (such as electronic device ED02). The interface ED77 can include a high-definition multimedia interface (HDMI), a universal serial bus (USB) interface, an SD card interface, and / or an audio interface.

[0171] The connection terminal ED78 can include a connector through which the electronic device ED01 can be physically connected to another electronic device (such as electronic device ED02). The connection terminal ED78 can include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (such as a headphone connector).

[0172] The haptic module ED79 can convert an electrical signal into a mechanical stimulus (vibration, movement, etc.) or an electrical stimulus that a user can sense through touch or kinesthesia. The haptic module ED79 can include a motor, a piezoelectric device, and / or an electrical stimulation device.

[0173] The camera module ED80 can capture still images and videos. The camera module ED80 can include a lens assembly having one or more lenses, Figure 1 an image sensor 1000, an image signal processor, and / or a flash. The lens assembly included in the camera module ED80 can collect light emitted from an object (i.e., the object to be captured).

[0174] The power management module ED88 can manage the power supplied to the electronic device ED01. The power management module ED88 can be implemented as part of a power management integrated circuit (PMIC).

[0175] The battery ED89 can supply power to the components of the electronic device ED01. The battery ED89 can include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0176] The communication module ED90 can support the establishment of a direct (wired) communication channel and / or a wireless communication channel between the electronic device ED01 and other electronic devices (such as the electronic device ED02, the electronic device ED04, the server ED08, etc.), and perform communication through the established communication channel. The communication module ED90 can operate independently of the processor ED20 (such as an application processor), and can include one or more communication processors that support direct communication and / or wireless communication. The communication module ED90 can include a wireless communication module ED92 (a cellular communication module, a short-range wireless communication module, a Global Navigation Satellite System (GNSS) communication module) and / or a wired communication module ED94 (a Local Area Network (LAN) communication module, a power line communication module, etc.). Among these communication modules, the corresponding communication module can communicate with other electronic devices via a first network ED98 (a short-range communication network such as Bluetooth, WiFi Direct, or Infrared Data Association (IrDA)) or a second network ED99 (a long-range communication network such as a cellular network, the Internet, or a computer network (LAN, WAN, etc.)). The various communication modules described above can be integrated into one element (a single chip, etc.), or can be implemented as multiple separate elements (multiple chips). The wireless communication module ED92 can identify and authenticate the electronic device ED01 in a communication network (for example, the first network ED98 and / or the second network ED99) by using the subscriber information (such as the International Mobile Subscriber Identity (IMSI)) stored in the subscriber identity module ED96.

[0177] The antenna module ED97 can send signals and / or power to the outside (such as another electronic device), or receive signals and / or power from the outside (such as another electronic device). The antenna can include a radiator formed as a conductive pattern formed on a substrate (such as a PCB). The antenna module ED97 can include one or more antennas. When the antenna module ED97 includes multiple antennas, an antenna suitable for the communication type used in the communication network (for example, the first network ED98 and / or the second network ED99) can be selected from the multiple antennas through the communication module ED90. The signals and / or power can be transmitted between the communication module ED90 and another electronic device via the selected antenna. Other components (such as an RFIC) other than the antenna can also be included as part of the antenna module ED97.

[0178] Some of these components may be connected to each other via communication methods between peripheral devices (bus, General-Purpose Input and Output (GPIO), Serial Peripheral Interface (SPI), Mobile Industry Processor Interface (MIPI), etc.), and may exchange signals (commands, data, etc.).

[0179] Commands or data may be sent or received between the electronic device ED01 and an external electronic device ED04 via a server ED08 connected to a second network ED99. The other electronic devices ED02 and ED04 may be devices of the same or different types as the electronic device ED01. All or some of the operations performed in the electronic device ED01 may be performed in one or more of the other electronic devices ED02, ED04, and ED08. For example, when the electronic device ED01 has to perform a certain function or service, the electronic device ED01 may request one or more other electronic devices to perform part or all of the function or service instead of performing the function or service itself. The one or more electronic devices that receive the request perform additional functions or services related to the request and may transmit the execution result to the electronic device ED01. For this purpose, for example, cloud computing, distributed computing, or client-server computing technologies may be used.

[0180] Figure 28 shows Figure 27 an example of a camera module ED80 included in the electronic device ED01. Refer to Figure 28 , the camera module ED80 may include a lens assembly 1110, a flash 1120, an image sensor 1000, an image stabilizer 1140, a memory 1150 (buffer memory, etc.) and / or an image signal processor 1160. The lens assembly 1110 may collect light emitted from an object to be captured. The camera module ED80 may include a plurality of lens assemblies 1110, and in this case, the camera module ED80 may include a dual camera module, a 360-degree camera, or a spherical camera. Some of the plurality of lens assemblies 1110 may have the same lens properties (viewing angle, focal length, autofocus, F-number, optical zoom, etc.) or different lens properties. The lens assembly 1110 may include a wide-angle lens or a telephoto lens.

[0181] The flash 1120 may emit light for enhancing the light emitted or reflected from the object. The flash 1120 may emit visible light or infrared light. The flash 1120 may include one or more light-emitting diodes (Red-Green-Blue (RGB) LED, white LED, infrared LED, ultraviolet LED, etc.) and / or a xenon lamp. The image sensor 1000 may be the image sensor described above with reference to Figure 1 and converts the light emitted or reflected from the object and transmitted through the lens assembly 1110 into an electrical signal to obtain an image corresponding to the object.

[0182] In response to the movement of the camera module ED80 or the electronic device ED01 including the camera module ED80, the image stabilizer 1140 moves one or more lenses or the image sensor 1000 included in the lens assembly 1110 in a specific direction, or controls the operating characteristics (such as adjusting the readout timing) of the image sensor 1000 to compensate for the negative impact of the movement. The image stabilizer 1140 can sense the movement of the camera module ED80 or the electronic device ED01 by using a gyro sensor (not shown) or an acceleration sensor (not shown) provided inside or outside the camera module ED80. The image stabilizer 1140 can be implemented as an optical type.

[0183] The memory 1150 can store some or all of the data of the images obtained by the image sensor 1000 for subsequent image processing operations. For example, when multiple images are obtained at high speed, the obtained raw data (such as Bayer pattern data, high-resolution data, etc.) is stored in the memory 1150, and only low-resolution images are displayed. Then, the raw data of the selected image (such as user selection, etc.) can be transmitted to the image signal processor 1160. The memory 1150 can be integrated with the memory ED30 of the electronic device ED01, or can include an additional memory that operates independently.

[0184] The image signal processor 1160 can obtain an image by using the electrical signal output from the image sensor 1000. For example, the image signal processor 1160 can directly perform Figures 23 to 26 some of the image processing shown together with the image sensor 1000. In addition, the image signal processor 1160 can request image data in a specific format from the image sensor 1000 according to the format of the required image data.

[0185] In addition, the image signal processor 1160 can perform additional image processing on the images obtained by the image sensor 1000 or the image data stored in the memory 1150. The image processing can include depth map generation, three-dimensional modeling, panoramic generation, feature extraction, image combination, and / or image compensation (such as noise reduction, resolution adjustment, brightness adjustment, blurring, sharpening, softening, etc.). The image signal processor 1160 can control the components (such as the image sensor 1000, etc.) included in the camera module ED80 (such as exposure time control, readout timing control, etc.).

[0186] The image processed by the image signal processor 1160 can be stored again in the memory 1150 for additional processing, or can be provided to external components of the camera module ED80 (e.g., the memory ED30, the display device ED60, the electronic device ED02, the electronic device ED04, the server ED08, etc.). The image signal processor 1160 can be integrated with the processor ED20, or can be configured as an additional processor that operates independently of the processor ED20. When the image signal processor 1160 is configured as an additional processor independent of the processor ED20, the image processed by the image signal processor 1160 undergoes additional image processing through the processor ED20, and then can be displayed on the display device ED60.

[0187] In addition, the image signal processor 1160 can independently receive two output signals from adjacent photosensitive units in each pixel or sub-pixel of the image sensor 1000, and can generate an autofocus signal based on the difference between the two output signals. The image signal processor 1160 can control the lens assembly 1110 based on the autofocus signal so that the focus of the lens assembly 1110 can be accurately formed on the surface of the image sensor 1000.

[0188] The electronic device ED01 may also include one or more camera modules having different properties or functions. The camera module may include elements similar to those of the camera module ED80 Figure 28 and the image sensor included in the camera module can be implemented as a CCD sensor and / or a CMOS sensor, and can include one or more sensors selected from image sensors having different properties (e.g., an RGB sensor, a black and white (BW) sensor, an IR sensor, or a UV sensor). In this case, one of the multiple camera modules ED80 may include a wide-angle camera, and another camera module ED80 may include a telephoto camera. Similarly, one of the multiple camera modules ED80 may include a front camera, and another camera module ED80 may include a rear camera.

[0189] Figure 29 is a block diagram of the electronic device 1200 including a multi-camera module, and Figure 30 is Figure 29 a detailed block diagram of the camera module in the electronic device shown.

[0190] Referring to Figure 29 , the electronic device 1200 may include a camera module group 1300, an application processor 1400, a power management integrated circuit (PMIC) 1500, an external memory 1600, and an image generator 1700.

[0191] The camera module group 1300 may include a plurality of camera modules 1300a, 1300b, and 1300c. Although the drawings illustrate an example in which three camera modules 1300a, 1300b, and 1300c are arranged, one or more embodiments are not limited thereto. In some embodiments, the camera module group 1300 may be modified to include only two camera modules. Additionally, in some embodiments, the camera module group 1300 may be modified to include n camera modules (n is a natural number of 4 or greater).

[0192] Hereinafter, with reference to Figure 30 a detailed configuration of a camera module 1300b will be described in detail, but according to an exemplary embodiment, the description provided below may also be applied to other camera modules 1300a and 1300c.

[0193] With reference to Figure 30 , the camera module 1300b may include a prism 1305, an optical path folding element (OPFE) 1310, an actuator 1330, an image sensing device 1340, and a storage unit 1350.

[0194] The prism 1305 may include a reflective surface 1307 having a light-reflective material and may deform the path of light L incident from the outside.

[0195] In some embodiments, the prism 1305 may change the path of light L incident in a first direction (X direction) to a second direction (Y direction) perpendicular to the first direction (X direction). Additionally, the prism 1305 may rotate the reflective surface 1307 having a light-reflective material about a central axis 1306 in direction A or in direction B such that the path of light L incident in the first direction (X direction) can be changed to a second direction (Y direction) perpendicular to the first direction (X direction). Here, the OPFE 1310 may also move in a third direction (Z direction) perpendicular to the first direction (X direction) and the second direction (Y direction).

[0196] In some embodiments, as shown in the figure, the maximum rotation angle of the prism 1305 in direction A is 15° or less in the positive A direction and greater than 15° in the negative A direction, but the embodiment is not limited thereto.

[0197] In some embodiments, the prism 1305 may move at an angle of about 20° in the positive B direction or the negative B direction, or at an angle between 10° and 20° or between 15° and 20°. Here, the movement angle is the same in the positive B direction or the negative B direction, or may be similar within a range of about 1°.

[0198] In some embodiments, the prism 1305 may move a reflective surface 1307 having a light-reflective material in a third direction (e.g., the Z direction) parallel to the direction in which the central axis 1306 extends.

[0199] The OPFE 1310 may include, for example, optical lenses formed into m groups (where m is a natural number). Here, the m lenses move in a second direction (the Y direction) and may change the optical zoom ratio of the camera module 1300b. For example, when the basic optical zoom ratio of the camera module 1300b is Z and the m optical lenses included in the OPFE 1310 move, the optical zoom ratio of the camera module 1300b may be changed to 3Z, 5Z, 10Z, or greater.

[0200] The actuator 1330 may move the OPFE 1310 or an optical lens (hereinafter referred to as the optical lens) to a specific position. For example, the actuator 1330 may adjust the position of the optical lens so that the image sensor 1342 may be located at the focal length of the optical lens for precise sensing operations.

[0201] The image sensing device 1340 may include an image sensor 1342, control logic 1344, and a memory 1346. The image sensor 1342 may sense an image of a sensing target by using light L provided through the optical lens. The control logic 1344 may control the overall operation of the camera module 1300b. For example, the control logic 1344 may control the operation of the camera module 1300b according to a control signal provided through a control signal line CSLb.

[0202] For example, the image sensor 1342 may include the above-described nanophotonic lens array (also referred to as a color separation lens array). The image sensor 1342 may receive more signals separated according to wavelengths in each pixel by using the nanostructure-based color separation lens array. Due to the above effects, the optical intensity required to generate a high-quality image with high resolution under low illumination may be ensured.

[0203] The memory 1346 may store information required for the operation of the camera module 1300b (e.g., calibration data 1347). The calibration data 1347 may include information required to generate image data by using light L provided from the outside through the camera module 1300b. The calibration data 1347 may include, for example, information related to the above-described degree of rotation, information related to the focal length, information related to the optical axis, etc. When the camera module 1300b is implemented in the form of a multi-state camera in which the focal length changes according to the position of the optical lens, the calibration data 1347 may include information related to the focal length value of the optical lens and autofocus according to each position (or state).

[0204] The storage unit 1350 may store image data sensed by the image sensor 1342. The storage unit 1350 may be disposed outside the image sensing device 1340 and may be stacked with a sensor chip included in the image sensing device 1340. In some embodiments, the storage unit 1350 may be implemented as an electrically erasable programmable read-only memory (EEPROM), but one or more embodiments are not limited thereto.

[0205] Reference Figure 29 and Figure 30 , in some embodiments, each of the plurality of camera modules 1300a, 1300b, and 1300c may include an actuator 1330. Accordingly, each of the plurality of camera modules 1300a, 1300b, and 1300c may include calibration data 1347 that is the same as or different from each other according to the operation of the actuator 1330 included therein.

[0206] In some embodiments, one of the plurality of camera modules 1300a, 1300b, and 1300c (e.g., 1300b) may be a folded lens type camera module including the prism 1305 and the OPFE 1310 as described above, and the other camera modules (e.g., 1300a and 1300c) may be vertical type camera modules that do not include the prism 1305 and the OPFE 1310. However, the present disclosure is not limited thereto.

[0207] In some embodiments, one of the plurality of camera modules 1300a, 1300b, and 1300c (e.g., 1300c) may be a vertical type depth camera that extracts depth information by using infrared rays (IR).

[0208] In some embodiments, at least two of the plurality of camera modules 1300a, 1300b, and 1300c (e.g., 1300a and 1300b) may have different fields of view. In this case, for example, the optical lenses of at least two of the plurality of camera modules 1300a, 1300b, and 1300c (e.g., 1300a and 1300b) may be different from each other, but one or more embodiments are not limited thereto.

[0209] Furthermore, in some embodiments, the plurality of camera modules 1300a, 1300b, and 1300c may have different fields of view from each other. In this case, the optical lenses respectively included in the plurality of camera modules 1300a, 1300b, and 1300c may be different from each other, but the inventive concept is not limited thereto.

[0210] In some embodiments, the multiple camera modules 1300a, 1300b, and 1300c may be physically isolated from each other. That is, the sensing area of one image sensor 1342 may not be divided and used by the multiple camera modules 1300a, 1300b, and 1300c, but the multiple camera modules 1300a, 1300b, and 1300c may each have an independent image sensor 1342 disposed therein.

[0211] Return reference Figure 29 , the application processor 1400 may include an image processing device 1410, a memory controller 1420, and an internal memory 1430. The application processor 1400 may be implemented separately from the multiple camera modules 1300a, 1300b, and 1300c. For example, the application processor 1400 and the multiple camera modules 1300a, 1300b, and 1300c may be implemented as separate semiconductor chips.

[0212] The image processing device 1410 may include multiple image processors 1411, 1412, and 1413 and a camera module controller 1414.

[0213] The image data generated by each of the camera modules 1300a, 1300b, and 1300c may be provided to the image processing device 1410 via separate image signal lines ISLa, ISLb, and ISLc, respectively. For example, the image data transfer may be performed by using a camera serial interface (CSI) based on the Mobile Industry Processor Interface (MIPI), but is not limited thereto.

[0214] The image data transmitted to the image processing device 1410 may be stored in the external memory 1600 before being transmitted to the image processors 1411 and 1412. The image data stored in the external memory 1600 may be provided to the image processor 1411 and / or the image processor 1412. The image processor 1411 may correct the image data to generate a video. The image processor 1412 may correct the image data to generate a still image. For example, the image processors 1411 and 1412 may perform preprocessing operations (e.g., color calibration, gamma calibration) on the image data.

[0215] The image processor 1411 may include sub-processors. When the number of sub-processors is equal to the number of camera modules 1300a, 1300b, and 1300c, each sub-processor may process the image data provided from one camera module. When the number of sub-processors is less than the number of camera modules 1300a, 1300b, and 1300c, at least one sub-processor may process the image data provided from multiple camera modules by using time-sharing processing. The image data processed by the image processor 1411 and / or the image processor 1412 may be stored in the external memory 1600 before being transmitted to the image processor 1413. The image data stored in the external memory 1600 may be transmitted to the image processor 1413. The image processor 1413 may perform post-processing operations (e.g., noise calibration, sharpness calibration, etc.) on the image data.

[0216] The image data processed in the image processor 1413 may be provided to the image generator 1700. The image generator 1700 may generate a final image by using the image data provided from the image processor 1413 according to the image generation information or the mode signal.

[0217] For example, the image generator 1700 may generate an output image by combining at least a part of the image data generated by the camera modules 1300a, 1300b, and 1300c having different fields of view according to the image generation information or the mode signal. In addition, the image generator 1700 may generate an output image by selecting one of the image data generated by the camera modules 1300a, 1300b, and 1300c having different fields of view according to the image generation information or the mode signal.

[0218] In some embodiments, the image generation information may include a zoom signal or a zoom factor. In addition, in some embodiments, the mode signal may be a signal based on a user-selected mode, for example.

[0219] When the image generation information is a zoom signal (zoom factor) and the camera modules 1300a, 1300b, and 1300c have different fields of view (angles of view) from each other, the image generator 1700 may perform different operations according to the type of the zoom signal. For example, when the zoom signal is a first signal, the image data output from the camera module 1300a is combined with the image data output from the camera module 1300c, and then, an output image may be generated by using the combined image signal and the image data output from the camera module 1300b and not used in the combination. When the zoom signal is a second signal different from the first signal, the image generator 1700 may not perform the image data combination, and then, an output image may be generated by selecting one of the image data output from the camera modules 1300a, 1300b, and 1300c, respectively. However, one or more embodiments are not limited thereto, and the method of processing the image data may be modified as needed.

[0220] The camera module controller 1414 may provide a control signal to each of the camera modules 1300a, 1300b, and 1300c. The control signal generated by the camera module controller 1414 may be provided to the corresponding camera modules 1300a, 1300b, and 1300c via separate control signal lines CSLa, CSLb, and CSLc.

[0221] In some embodiments, the control signal provided from the camera module controller 1414 to the plurality of camera modules 1300a, 1300b, and 1300c may include mode information according to a mode signal. The plurality of camera modules 1300a, 1300b, and 1300c may operate in a first operation mode and a second operation mode related to a sensing speed based on the mode information.

[0222] In the first operation mode, the plurality of camera modules 1300a, 1300b, and 1300c may generate an image signal at a first speed (for example, generate an image signal at a first frame rate), encode the image signal at a second speed faster than the first speed (for example, encode an image signal at a second frame rate greater than the first frame rate), and transmit the encoded image signal to the application processor 1400. Here, the second speed may be 30 times or less than the first speed.

[0223] The application processor 1400 may store the received image signal (i.e., the encoded image signal) in the memory 1430 provided inside thereof or the memory 1600 outside the application processor 1400, and thereafter, read and decode the encoded signal from the memory 1430 or the memory 1600, and may display the image data generated based on the decoded image signal. For example, the image processors 1411 and 1412 in the image processing device 1410 may perform decoding and may perform image processing on the decoded image signal.

[0224] In the second operation mode, the plurality of camera modules 1300a, 1300b, and 1300c generate image signals at a third speed slower than the first speed (e.g., generate image signals at a third frame rate lower than the first frame rate), and may transmit the image signals to the application processor 1400. The image signals provided to the application processor 1400 may be unencoded signals. The application processor 1400 may perform image processing on the received image signals or store the image signals in the memory 1430 or the memory 1600.

[0225] The PMIC 1500 may supply power (e.g., a power supply voltage) to each of the plurality of camera modules 1300a, 1300b, and 1300c. For example, under the control of the application processor 1400, the PMIC 1500 may supply first power to the camera module 1300a via the power signal line PSLa, supply second power to the camera module 1300b via the power signal line PSLb, and supply third power to the camera module 1300c via the power signal line PSLc.

[0226] The PMIC 1500 may generate power corresponding to each of the plurality of camera modules 1300a, 1300b, and 1300c in response to the power control signal PCON from the application processor 1400 and may adjust the power level. The power control signal PCON may include power adjustment signals for each operation mode of the plurality of camera modules 1300a, 1300b, and 1300c. For example, the operation mode may include a low power mode, and the power control signal PCON may include information related to the operation of the camera module in the low power mode and the set power level. The power levels provided to the plurality of camera modules 1300a, 1300b, and 1300c may be equal to or different from each other. In addition, the power level may be changed dynamically.

[0227] It should be understood that the embodiments described herein are to be considered in a descriptive sense only and not for purposes of limitation. The description of features or aspects in each embodiment should generally be regarded as available for other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those of ordinary skill in the art will understand that various changes in form and detail may be made without departing from the spirit and scope defined by the appended claims.

Claims

1. An image sensor, comprising: A sensor substrate including a plurality of unit pixel patterns, the plurality of unit pixel patterns including a first pixel, a second pixel, a third pixel, and a fourth pixel configured to sense light, the plurality of unit pixel patterns being two-dimensionally arranged in a first direction and a second direction; And A nanophotonic lens array including a plurality of unit superpatterns, the plurality of unit superpatterns including a first superregion, a second superregion, a third superregion, and a fourth superregion respectively corresponding to the first pixel, the second pixel, the third pixel, and the fourth pixel, the plurality of unit superpatterns being two-dimensionally arranged in the first direction and the second direction, Wherein each of the first superregion, the second superregion, the third superregion, and the fourth superregion includes a plurality of nanostructures configured to perform color separation on light incident on each of the plurality of unit superpatterns included in the nanophotonic lens array and converge the color-separated light onto the first pixel, the second pixel, the third pixel, and the fourth pixel, Wherein, in each of the plurality of unit superpatterns, the distribution of the cross-sectional areas of the plurality of nanostructures is asymmetric with respect to the center of each of the plurality of unit superpatterns in the first direction, the second direction, a first diagonal direction, and a second diagonal direction, and Wherein, in each of the plurality of unit superpatterns, the distribution of the cross-sectional areas of the plurality of nanostructures in the first superregion and the distribution of the cross-sectional areas of the plurality of nanostructures in the fourth superregion are rotationally symmetric with respect to the center of each of the plurality of unit superpatterns at an angle of 180°.

2. The image sensor according to claim 1, wherein, The heights, positions, and periods of the plurality of nanostructures included in the first superregion, the second superregion, the third superregion, and the fourth superregion are equal to each other.

3. The image sensor according to claim 1, wherein, The distribution of the cross-sectional areas of the plurality of nanostructures in the first superregion, the distribution of the cross-sectional areas of the plurality of nanostructures in the second superregion, the distribution of the cross-sectional areas of the plurality of nanostructures in the third superregion, and the distribution of the cross-sectional areas of the plurality of nanostructures in the fourth superregion are determined such that color separation and convergence of light occur independently in each of the plurality of unit superpatterns without light exchange between the plurality of unit superpatterns.

4. The image sensor according to claim 1, wherein The distribution of the cross-sectional areas of the plurality of nanostructures in the first superregion is asymmetric with respect to the center of the first superregion in the first direction, the second direction, the first diagonal direction, and the second diagonal direction, and Wherein the distribution of the cross-sectional areas of the plurality of nanostructures in the fourth superregion is asymmetric with respect to the center of the fourth superregion in the first direction, the second direction, the first diagonal direction, and the second diagonal direction.

5. The image sensor according to claim 4, wherein, Among the plurality of nanostructures in the first super-region, the phase delay of the light transmitted by the nanostructures adjacent to the second super-region and the phase delay of the light transmitted by the nanostructures adjacent to the third super-region are greater than the phase delay of the light transmitted by other nanostructures, and wherein, among the plurality of nanostructures in the fourth super-region, the phase delay of the light transmitted by the nanostructures adjacent to the second super-region and the phase delay of the light transmitted by the nanostructures adjacent to the third super-region are greater than the phase delay of the light transmitted by other nanostructures.

6. The image sensor according to claim 1, wherein, Among the plurality of pairs of two nanostructures facing each other in the second direction with respect to the horizontal center line passing through the center of the first super-region in the first direction, the cross-sectional areas of at least one pair of nanostructures are different from each other, wherein, among the plurality of pairs of two nanostructures facing each other in the first direction with respect to the vertical center line passing through the center of the first super-region in the second direction, the cross-sectional areas of at least one pair of nanostructures are different from each other, wherein, among the plurality of pairs of two nanostructures facing each other with respect to the first diagonal passing through the center of the first super-region, the cross-sectional areas of at least one pair of nanostructures are different from each other, wherein, among the plurality of pairs of two nanostructures facing each other with respect to the second diagonal passing through the center of the first super-region, the cross-sectional areas of at least one pair of nanostructures are different from each other, and wherein the cross-sectional areas of two nanostructures adjacent to another unit super-pattern different from the unit super-pattern including the first super-region and facing each other based on the second diagonal are equal to each other.

7. The image sensor according to claim 1, wherein, Among the plurality of pairs of two nanostructures facing each other in the second direction with respect to the horizontal center line passing through the center of the fourth super-region in the first direction, the cross-sectional areas of at least one pair of nanostructures are different from each other, wherein, among the plurality of pairs of two nanostructures facing each other in the first direction with respect to the vertical center line passing through the center of the fourth super-region in the second direction, the cross-sectional areas of at least one pair of nanostructures are different from each other, wherein, among the plurality of pairs of two nanostructures facing each other with respect to the first diagonal passing through the center of the fourth super-region, the cross-sectional areas of at least one pair of nanostructures are different from each other, and wherein, among the plurality of pairs of two nanostructures facing each other with respect to the second diagonal passing through the center of the fourth super-region, the cross-sectional areas of at least one pair of nanostructures are different from each other.

8. The image sensor according to claim 7, wherein, The cross-sectional areas of two nanostructures adjacent to another unit super-pattern different from the unit super-pattern including the fourth super-region and facing each other based on the second diagonal are equal to each other.

9. The image sensor according to claim 1, wherein, In the second super-region, based on the center of the second super-region, the distribution of the cross-sectional areas of the plurality of nanostructures is symmetric in the first diagonal direction and asymmetric in the first direction, the second direction, and the second diagonal direction, and Among them, in the third super-region, based on the center of the third super-region, the distribution of the cross-sectional areas of the plurality of nanostructures is symmetric in the first diagonal direction and asymmetric in the first direction, the second direction, and the second diagonal direction.

10. The image sensor according to claim 9, wherein, Among the plurality of nanostructures in the second super-region, the phase delay of the light transmitted by the nanostructures adjacent to the first super-region and the phase delay of the light transmitted by the nanostructures adjacent to the fourth super-region are greater than the phase delay of the light transmitted by other nanostructures, and Among them, among the plurality of nanostructures in the third super-region, the phase delay of the light transmitted by the nanostructures adjacent to the first super-region and the phase delay of the light transmitted by the nanostructures adjacent to the fourth super-region are greater than the phase delay of the light transmitted by other nanostructures.

11. The image sensor according to claim 1, wherein, In the second super-region, the cross-sectional areas of two nanostructures facing each other with respect to the first diagonal passing through the center of the second super-region are equal to each other.

12. The image sensor according to claim 11, wherein, Among a plurality of pairs of two nanostructures facing each other in the second direction with respect to the horizontal center line passing through the center of the second super-region in the first direction, the cross-sectional areas of at least one pair of nanostructures are different from each other. Among them, among a plurality of pairs of two nanostructures facing each other in the first direction with respect to the vertical center line passing through the center of the second super-region in the second direction, the cross-sectional areas of at least one pair of nanostructures are different from each other, and Among them, among a plurality of pairs of two nanostructures facing each other with respect to the second diagonal passing through the center of the second super-region, the cross-sectional areas of at least one pair of nanostructures are different from each other.

13. The image sensor according to claim 1, wherein, In the third super-region, the cross-sectional areas of two nanostructures facing each other with respect to the first diagonal passing through the center of the third super-region are equal to each other. Among them, among a plurality of pairs of two nanostructures facing each other in the second direction with respect to the horizontal center line passing through the center of the third super-region in the first direction, the cross-sectional areas of at least one pair of nanostructures are different from each other. Among them, among a plurality of pairs of two nanostructures facing each other in the first direction with respect to the vertical center line passing through the center of the third super-region in the second direction, the cross-sectional areas of at least one pair of nanostructures are different from each other, and Among them, among a plurality of pairs of two nanostructures facing each other with respect to the second diagonal passing through the center of the third super-region, the cross-sectional areas of at least one pair of nanostructures are different from each other.

14. The image sensor according to claim 1, wherein, In the unit super-pattern, the phase delay of the light transmitted by the nanostructures at the central portion of the unit super-pattern is configured to be greater than the phase delay of the light transmitted by the nanostructures directly adjacent to another unit super-pattern.

15. The image sensor according to claim 1, wherein, The plurality of nanostructures are configured to perform color separation on the light incident on each unit super-pattern in the nano-photonic lens array, and converge the light of the first band onto the first pixel and the fourth pixel, converge the light of the second band onto the second pixel, and converge the light of the third band onto the third pixel. Among them, in a unit pixel pattern, the second pixel and the third pixel are arranged in the first diagonal direction, and the first pixel and the fourth pixel are arranged in the second diagonal direction that intersects the first diagonal direction, and Among them, in a unit superpattern, the second superregion and the third superregion are arranged in the first diagonal direction, and the first superregion and the fourth superregion are arranged in the second diagonal direction.

16. The image sensor according to claim 1, further comprising: A plurality of isolation patterns on the upper surface of the nanophotonic lens array Among them, each of the plurality of isolation patterns faces the first superregion, the second superregion, the third superregion, and the fourth superregion included in the corresponding unit superpattern among the plurality of unit superpatterns, and Among them, each isolation pattern among the plurality of isolation patterns has a flat upper surface, an irregular and uneven upper surface, or a convex upper surface.

17. The image sensor according to claim 1, wherein, In each unit pixel pattern among the plurality of unit pixel patterns, the image sensor is configured to: Generate a luminance signal by summing the outputs from the first pixel, the output from the second pixel, the output from the third pixel, and the output from the fourth pixel; Generate a first color signal by subtracting the output from the first pixel and the output from the fourth pixel from the output from the third pixel; And Generate a second color signal by subtracting the output from the first pixel and the output from the fourth pixel from the output from the second pixel.

18. The image sensor according to claim 17, wherein, The image sensor is further configured to: Convert the luminance signal, the first color signal, and the second color signal into digital signals; Selectively generate image data having one of a plurality of digital image formats based on the digitized luminance signal, first color signal, and second color signal; and Output the image data to the outside of the image sensor.

19. An electronic device, comprising: A lens assembly configured to form an optical image of an object; An image sensor configured to convert the optical image formed by the lens assembly into an electrical signal; And A processor configured to process the electrical signal generated by the image sensor, Among them, the image sensor includes: A sensor substrate including a plurality of unit pixel patterns, the plurality of unit pixel patterns including a first pixel, a second pixel, a third pixel, and a fourth pixel configured to sense light, the plurality of unit pixel patterns being two-dimensionally arranged in a first direction and a second direction; and A nanophotonic lens array including a plurality of unit superpatterns, the plurality of unit superpatterns including a first superregion, a second superregion, a third superregion, and a fourth superregion corresponding to the first pixel, the second pixel, the third pixel, and the fourth pixel respectively, the plurality of unit superpatterns being two-dimensionally arranged in the first direction and the second direction Among them, each of the first super-region, the second super-region, the third super-region, and the fourth super-region includes a plurality of nanostructures configured to perform color separation on light incident on each unit super-pattern among the plurality of unit super-patterns in the nano-photonic lens array and converge the color-separated light onto the first pixel, the second pixel, the third pixel, and the fourth pixel. Among them, in each unit super-pattern among the plurality of unit super-patterns, the distribution of the cross-sectional areas of the plurality of nanostructures is asymmetric with respect to the center of each unit super-pattern among the plurality of unit super-patterns in the first direction, the second direction, the first diagonal direction, and the second diagonal direction, and Among them, in each unit super-pattern among the plurality of unit super-patterns, the distribution of the cross-sectional areas of the plurality of nanostructures in the first super-region and the distribution of the cross-sectional areas of the plurality of nanostructures in the fourth super-region are rotationally symmetric with respect to the center of each unit super-pattern among the plurality of unit super-patterns at an angle of 180°.

20. An image sensor, comprising: A sensor substrate including a plurality of unit pixel patterns, the plurality of unit pixel patterns including a first pixel, a second pixel, a third pixel, and a fourth pixel configured to sense light, the plurality of unit pixel patterns being two-dimensionally arranged in a first direction and a second direction; And A nano-photonic lens array including a plurality of unit super-patterns, the plurality of unit super-patterns including a first super-region, a second super-region, a third super-region, and a fourth super-region respectively corresponding to the first pixel, the second pixel, the third pixel, and the fourth pixel, the plurality of unit super-patterns being two-dimensionally arranged in the first direction and the second direction, Among them, each of the first super-region, the second super-region, the third super-region, and the fourth super-region includes a plurality of nanostructures configured to perform color separation on light incident on each unit super-pattern among the plurality of unit super-patterns included in the nano-photonic lens array and converge the color-separated light onto the first pixel, the second pixel, the third pixel, and the fourth pixel. Among them, in each unit super-pattern among the plurality of unit super-patterns, the distribution of the cross-sectional areas of the plurality of nanostructures is asymmetric with respect to the center of each unit super-pattern among the plurality of unit super-patterns in the first direction, the second direction, the first diagonal direction, and the second diagonal direction, and Among them, based on the distribution of the cross-sectional areas of the plurality of nanostructures in the first super-region, the distribution of the cross-sectional areas of the plurality of nanostructures in the second super-region, the distribution of the cross-sectional areas of the plurality of nanostructures in the third super-region, and the distribution of the cross-sectional areas of the plurality of nanostructures in the fourth super-region, color separation and convergence of light occur independently in each unit super-pattern among the plurality of unit super-patterns without light exchange occurring between the plurality of unit super-patterns.

Images