LED light-emitting device

Abstract

The invention provides an LED light-emitting device which comprises a support, a first light source and a second light source, the first light source and the second light source are arranged on the support, the first light source is provided with a first chip and a first fluorescent layer covering the first chip, the first chip is used for emitting blue light with the half-wave width larger than or equal to 30 nm, and the second chip is used for emitting blue light with the half-wave width larger than or equal to 30 nm. The first fluorescent layer is provided with at least one kind of red fluorescent powder and at least one kind of green fluorescent powder so as to be excited by the first chip to form white light; the second light source is provided with a second chip and a second fluorescent layer, the second fluorescent layer is provided with dark red fluorescent powder with the peak wavelength of the excitation spectrum larger than 690 nm, and the second fluorescent layer is excited by the second chip to form dark red light with the wave crest within the range of 630-830 nm. Therefore, the sunlight-like spectrum with beneficial red light can be simply and conveniently realized, the production difficulty and the production cost can be reduced, and the production efficiency can be improved.

Description

Technical Field

[0001] This application relates to the technical field of LED products, and particularly to an LED lighting device. Background Art

[0002] In the prior art, a sunlight-like spectrum is usually obtained by using multiple blue chips to excite phosphors. However, the light emission in the far red region is weak in this method. To improve this problem, gallium arsenide red chips are generally used to supplement the red light. However, since the half-wave width of the light emitted by the gallium arsenide red chips is very narrow, about 18 nm, multiple red chips with different wavelengths are required to fill the red light in a larger range. However, in this combination method, the multiple blue chips and multiple red chips are two types of independent light sources, and the light obtained after simultaneous operation is a mixed light, which is likely to cause problems of poor illumination uniformity, affecting the visual effect, and increasing the manufacturing difficulty. Summary of the Invention

[0003] In view of this, this application provides an LED lighting device with a simple structure, which is beneficial to reducing the processing cost and improving the processing efficiency.

[0004] To achieve the above object, this application provides the following technical solutions:

[0005] An LED lighting device includes a bracket, a first light source and a second light source arranged on the bracket. The first light source has a first chip and a first phosphor layer covering the first chip. The first chip is used to emit blue light with a half-wave width greater than or equal to 30 nm. The first phosphor layer has at least one red phosphor and at least one green phosphor to be excited by the first chip to form white light.

[0006] The second light source has a second chip and a second phosphor layer. The second phosphor layer has a deep red phosphor with a peak wavelength of the excitation spectrum greater than 690 nm to be excited by the second chip to form deep red light having a peak in the range of 630 - 830 nm.

[0007] Optionally, the mass ratio of the deep red phosphor to the second phosphor layer is 20% - 50%.

[0008] Optionally, the material of the deep red phosphor is GaTa04:0.5%Cr, GaTa04:0.5%Cr, 0.9%Yb, ScTa04:0.9%Cr, InTa04:1%Cr, Mg7Ga2GeO 12 :0.09Cr, Gd3Y 0.5 In 0.5 Ga40 12 、Gd3Zn2GaGe2012 :2%Cr 3+ ,0.2%Yb 3+ 、Gd3Zn 0.8 Ga 3.4 Ge 0.8 O 12 :1.5%Cr 3+ 、Sr3Ga2Ge40 14 :3%Cr / 15%Cr, Sr3Ga 1.98 I n 0.02 Ge4O 14 :3%Cr, Sr3Ga 1.98 I n 0.02 Ge40 14 :3%Cr,5%Yb,La3SnGa5O 14 :0.015Cr 3+ 、ZnTa2O6:0.05Cr 3+ 、Li ScGe04:0.1Cr 4+ 、La2MgHfO6:1%Cr 3+ / 0.5%Yb 3+ 、LaMg 0.5 Sn 0.5 O3:Cr 3+ Mg 14 5O 24 :0.25Cr 3+ / Cr 4+ and Ca3Y2Ge30 12 :Cr 3+ At least one of .

[0009] Optionally, the first fluorescent layer comprises red fluorescent powder, green fluorescent powder and cyan fluorescent powder, the mass ratio of the red fluorescent powder to the first fluorescent layer is 4%-7%, the mass ratio of the green fluorescent powder to the first fluorescent layer is 20%-24%, and the mass ratio of the cyan fluorescent powder to the first fluorescent layer is 20%-24%.

[0010] Optionally, the second chip is configured as a single blue light chip, configured to emit blue light with a main wavelength of 430-475 nm.

[0011] Optionally, the second chip is configured as a single red light chip for emitting red light with a peak wavelength of 620-670 nm.

[0012] Optionally, the second chip is used to emit blue light with a half-wave width greater than or equal to 30 nm, and the second chip is configured as a single wide-band chip or a plurality of narrow-band chips.

[0013] Optionally, the first chip is configured as a single wide-band chip or multiple narrow-band chips.

[0014] Optionally, the first chip is configured as three of the narrow-band chips.

[0015] Optionally, the spectrum of the wide-band chip has a main peak and a shoulder peak distributed within a wavelength range of 430 - 475 nm, and the peak wavelength of the shoulder peak is greater than the peak wavelength of the main peak.

[0016] Optionally, the spectra of the multiple narrow-band chips have a main peak and two shoulder peaks distributed within a wavelength range of 430 - 475 nm. The two shoulder peaks include a first shoulder peak and a second shoulder peak located on both sides of the main peak respectively. The peak wavelength of the first shoulder peak is less than the peak wavelength of the second shoulder peak, and the peak intensity of the first shoulder peak is greater than the peak intensity of the second shoulder peak.

[0017] Optionally, multiple first chips are arranged in parallel and are all covered by the first fluorescent layer; one second chip is provided and is in parallel with the multiple first chips.

[0018] In the LED lighting device provided by the present application, during use, the first chip with a half-width at half maximum of not less than 30 nm excites a second fluorescent layer including at least one red phosphor and at least one green phosphor to generate white light, and at the same time, the second chip excites the second fluorescent layer with a deep red phosphor to generate deep red light. Since the first light source and the second light source are arranged on the same bracket, the white light emitted by the first light source and the deep red light emitted by the second light source are mixed and emitted, so that the mixed light emitted by this LED lighting device has a red light gain, thereby enabling a simple realization of a solar-like spectrum with beneficial red light, which is beneficial to reducing the production difficulty and production cost and improving the production efficiency. Description of the Drawings

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on the provided drawings.

[0020] Figure 1 It is a schematic structural diagram of the LED lighting device shown in the first embodiment;

[0021] Figure 2 It is a schematic structural diagram of the LED lighting device shown in the second embodiment;

[0022] Figure 3 It is a circuit connection diagram of the first chip and the second chip shown in some embodiments;

[0023] Figure 4 Spectral schematic diagram of a wide-band chip shown for some embodiments;

[0024] Figure 5 Spectral schematic diagrams of multiple narrow-band chips shown for some embodiments;

[0025] Figure 6 Spectral comparison diagram of embodiments and comparative examples shown for some embodiments.

[0026] In the figure: 1, the first light source; 11, the first chip; 12, the first fluorescent layer; 2, the second light source; 21, the second chip; 22, the second fluorescent layer; 3, the bracket. Detailed implementation manners

[0027] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present application.

[0028] As Figures 1 - 6 shown, the embodiment of the present application provides an LED lighting device, including a bracket 3, a first light source 1 and a second light source 2. The bracket 3 can be set in the shape of a substrate or a bowl cup, and is used to provide a die-bonding area. Both the first light source 1 and the second light source 2 are arranged on the bracket 3, that is, both the first light source 1 and the second light source 2 are electrically connected to the die-bonding area on the bracket 3, so that the first light source 1 and the second light source 2 are connected to an electric current to emit light. The mixed light formed by the light emitted by the first light source 1 and the light emitted by the second light source 2 is the light emitted by the LED lighting device.

[0029] The first light source 1 includes a first chip 11 and a first fluorescent layer 12. The first chip 11 is electrically connected to the bracket 3 and is configured to emit blue light with a half-width greater than or equal to 30 nm. For example, the first chip is set as a blue light chip, and one or more such blue light chips can be provided. That is, the blue light with a half-width greater than or equal to 30 nm is emitted by all the blue light chips in the first light source 1. The first fluorescent layer 12 is connected to the bracket 3 and covers the side of the first chip 11 away from the bracket 3, so that the blue light emitted by the first chip 11 passes through the first fluorescent layer 12 and is emitted. Among them, the first fluorescent layer 12 has at least one red phosphor and at least one green phosphor, so that the first chip 11 excites the first fluorescent layer 12 to form white light, and this white light is emitted by the first light source 1. In this way, by using the first chip 11 with a half-width of not less than 30 nm to excite the second fluorescent layer 22 including at least one red phosphor and at least one green phosphor to generate white light, the continuity of the white light spectrum can be effectively improved, its similarity to the solar spectrum / visible light spectrum is increased, and then the light quality and eye protection effect of the artificial lighting LED light source are improved, and the visual fatigue caused by long-term use is alleviated.

[0030] The second light source 2 includes a second chip 21 and a second fluorescent layer 22. The second chip 21 is electrically connected to the bracket 3, and the second fluorescent layer 22 is connected to the bracket 3 and covers the side of the second chip 21 away from the bracket 3, so that the light emitted by the second chip 21 passes through the second fluorescent layer 22 and is emitted. Among them, the second fluorescent layer 22 has a dark red phosphor, and the peak wavelength of the excitation spectrum of this dark red phosphor is greater than 690 nm. The second chip 21 excites the second fluorescent layer 22 to form deep red light, and this deep red light has a peak in the range of 630 - 830 nm. In this way, by using the second chip 21 to excite the second fluorescent layer 22 with a dark red phosphor to generate deep red light, it is not necessary to use multiple blue light chips and multiple red light chips in cooperation, which is beneficial to simplifying the structure, reducing the production difficulty and production cost, and improving the production efficiency.

[0031] During use, the first chip 11 with a half-width of not less than 30 nm excites the second fluorescent layer 22 including at least one red phosphor and at least one green phosphor to generate white light. At the same time, the second chip 21 excites the second fluorescent layer 22 with a dark red phosphor to generate deep red light. Since the first light source 1 and the second light source 2 are arranged on the same bracket 3, the white light emitted by the first light source 1 and the deep red light emitted by the second light source 2 are mixed and emitted, so that the mixed light emitted by this LED lighting device has a red light gain, and thus a solar-like spectrum with beneficial red light can be simply realized, which is beneficial to reducing the production difficulty and production cost and improving the production efficiency.

[0032] In this solution, the mass ratio of the crimson phosphor to the second fluorescent layer 22 is 20%-50%. If the concentration of the crimson phosphor in the second fluorescent layer 22 is too high, it will affect the flow of the fluorescent glue and be inconvenient for processing and production. If the concentration of the crimson phosphor in the second fluorescent layer 22 is too low, it will affect the uniformity of the crimson phosphor in the second fluorescent layer 22, reducing the light-emitting effect. By controlling the mass ratio of the crimson phosphor to the second fluorescent layer 22, both the product quality and the processing efficiency can be improved. Here, the mass ratio of the crimson phosphor to the second fluorescent layer 22 is preferably 28.5%.

[0033] In some specific embodiments, the material of the deep red phosphor in the second phosphor layer 22 is GaTa04: 0.5% Cr, GaTa04: 0.5% Cr, 0.9% Yb, ScTa04: 0.9% Cr, InTa04: 1% Cr, Mg7Ga2GeO 12 :0.09Cr, Gd3Y 0.5 In 0.5 Ga40 12 、Gd3Zn2GaGe20 12 :2%Cr 3+ ,0.2%Yb 3+ 、Gd3Zn 0.8 Ga 3.4 Ge 0.8 O 12 :1.5%Cr 3+ 、Sr3Ga2Ge40 14 :3%Cr / 15%Cr, Sr3Ga 1.98 I n 0.02 Ge4O 14 :3%Cr, Sr3Ga 1.98 I n 0.02 Ge40 14 :3%Cr,5%Yb,La3SnGa5O 14 :0.015Cr 3+ 、ZnTa2O6:0.05Cr 3+ 、LiScGe04:0.1Cr 4+ 、La2MgHfO6:1%Cr 3+ / 0.5%Yb 3+ 、LaMg 0.5 Sn 0.5 O3:Cr 3+ Mg 14 5O 24 :0.25Cr 3+ / Cr 4+ and Ca3Y2Ge30 12 :Cr 3+at least one of

[0034] In some embodiments, the first fluorescent layer 12 has a red phosphor, a green phosphor, and a cyan phosphor. The red phosphor is used to emit red light with a peak wavelength of 650 nm to 660 nm, the green phosphor is used to emit green light with a peak wavelength of 525 nm to 540 nm, and the cyan phosphor is used to emit cyan light with a peak wavelength of 490 nm to 500 nm. Among them, the mass ratio of the red phosphor to the first fluorescent layer 12 is 4% - 7%, for example, it can be set to 5.5%. The mass ratio of the green phosphor to the first fluorescent layer 12 is 20% - 24%, for example, it can be set to 22%. The mass ratio of the cyan phosphor to the first fluorescent layer 12 is 20% - 24%, for example, it can be set to 22%.

[0035] In a specific embodiment, the red phosphor includes CaAlSiN:Eu 2+ , Sr2Si5N8:Eu 2+ , KSF:Mn 4+ , CaS:Eu 2+ , SrMoO4:Eu 3+ , Ca3WO6:Eu 3+ , SrAlSi4N7:Eu 2+ , SrLiAl3N4:Eu 2+ at least one of. The green phosphor includes SiAlON:Eu 2+ , LuAG:Ce 3+、 GaYAG:Ce 3+ , SrAl2O4:Eu 2+ , SrSc2O4:Eu 2+ , Sr2SiO4:Eu 2+ at least one of. The second green phosphor includes SiAlON:Eu 2+ , LuAG:Ce 3+ , GaYAG:Ce 3+ , SrAl2O4:Eu 2+ , SrSc2O4:Eu 2+ , Sr2SiO4:Eu 2+ at least one of. The first cyan phosphor includes SrSi2N2O2:Eu 2+ , Ca5(PO4)3Cl:Eu 2+ , Sr4Al 14 O 25 :Eu 2+ at least one of.

[0036] In this solution, there is one second chip 21, which can be set as a single blue light chip or a single red light chip. When the second chip 21 is set as a single blue light chip, the second chip 21 is used to emit blue light with a main wavelength of 430 - 475 nm, which excites the second fluorescent layer 22 to form the above-mentioned deep red light. When the second chip 21 is set as a single red light chip, the second chip 21 is used to emit red light with a peak wavelength of 620 - 670 nm, which excites the second fluorescent layer 22 to form the above-mentioned deep red light. In this way, there is only one second chip 21. Compared with the form of cooperation of multiple light-emitting chips, the structure of this solution is simple, easy to process, and is conducive to improving the processing efficiency and structural stability.

[0037] In addition, the second chip 21 can be used to emit blue light with a full width at half maximum (FWHM) greater than or equal to 30 nm. By using the light-emitting method of exciting the second fluorescent layer 22 with a broadband blue light source with an FWHM of not less than 30 nm, the continuity of the spectrum can be effectively improved, thereby improving the light quality and eye protection effect of artificial lighting and alleviating visual fatigue caused by long-term use.

[0038] Among them, the second chip 21 can be set as a single broadband chip, and this single broadband chip can emit blue light with a FWHM greater than or equal to 30 nm. The second chip 21 can also be set as multiple narrowband chips, and these multiple narrowband chips can combine to emit blue light with a FWHM greater than or equal to 30 nm.

[0039] In some embodiments, the structural forms of the first chip 11 and the second chip 21 can be the same. The first chip 11 can be set as a single broadband chip, and this single broadband chip can emit blue light with a FWHM greater than or equal to 30 nm. The first chip 11 can also be set as multiple narrowband chips, and these multiple narrowband chips can combine to emit blue light with a FWHM greater than or equal to 30 nm.

[0040] The above single broadband chip and multiple narrowband chips will be specifically described below.

[0041] As Figure 4 shown, the spectrum of a single broadband chip has a main peak and a shoulder peak distributed within the wavelength range of 430 - 475 nm, and the peak wavelength of the shoulder peak is greater than the peak wavelength of the main peak. It should be noted that a broadband chip refers to a chip with a FWHM of the spectral waveform diagram of the generated blue light source greater than or equal to 30 nm. The blue light source generated by such a broadband chip can be converted into white light with a high similarity to the solar spectrum / visible light spectrum after being excited by red and green phosphors in the fluorescent layer.

[0042] In a specific solution, the full width at half maximum (FWHM) in the spectral waveform diagram of the blue light source generated by the broadband chip is 30 - 45 nm. For example, the FWHM can be 30 nm, 31 nm, 32 nm, 33 nm, 34 nm, 35 nm, 36 nm, 37 nm, 38 nm, 39 nm, 40 nm, 41 nm, 42 nm, 43 nm, 44 nm, 45 nm. The peak intensity A1 of the main peak and the peak intensity B1 of the shoulder peak satisfy B1 / A1 = 20% - 90%. For example, the value of B1 / A1 can be 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%. Preferably, B1 / A1 = 65% - 85%. By regulating the peak intensity relationship between the main peak and the shoulder peak, the waveform of the mixed white light spectrum can be further improved, and its similarity to the solar spectrum / visible light spectrum can be further enhanced.

[0043] In a specific solution, the peak wavelength of the main peak is between 430 nm and 455 nm. For example, the peak wavelength of the main peak can be 430 nm, 431 nm, 432 nm, 433 nm, 434 nm, 435 nm, 436 nm, 437 nm, 438 nm, 439 nm, 440 nm, 441 nm, 442 nm, 443 nm, 444 nm, 445 nm, 446 nm, 447 nm, 448 nm, 449 nm, 450 nm, 451 nm, 452 nm, 453 nm, 454 nm, 455 nm. Preferably, the peak wavelength of the main peak is between 435 nm and 442.5 nm. The peak wavelength of the shoulder peak is between 447 nm and 475 nm. For example, the peak wavelength of the shoulder peak can be 460 nm, 461 nm, 462 nm, 463 nm, 464 nm, 465 nm, 466 nm, 467 nm, 468 nm, 469 nm, 470 nm, 471 nm, 472 nm, 473 nm, 474 nm, 475 nm.

[0044] Furthermore, the difference between the peak wavelength of the main peak and the peak wavelength of the shoulder peak is between 5 nm and 30 nm. For example, the difference between the peak wavelength of the main peak and the peak wavelength of the shoulder peak can be 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm, 27 nm, 28 nm, 29 nm, 30 nm. It should be noted that the peak wavelength refers to the wavelength position with the maximum radiation power in the output wavelength distribution curve, also known as the maximum power wavelength.

[0045] With such settings, by adjusting the peak wavelengths of the main peak and the shoulder peak in the spectral waveform diagram of the blue light source generated by the wide-band chip, the spectral waveform diagram of the wide-band blue light source can be further optimized, so that its similarity to the standard white light spectrum is better, and high color rendering index (Ra), high color protection index (Rg) and high color fidelity index (Rf) can be achieved without affecting the brightness of the light-emitting device, so as to accurately restore the color of the illuminated object, protect the vividness of the color or maintain the authenticity of the color, and further improve the light quality.

[0046] As Figure 5 shown, the spectra of multiple narrow-band chips have a main peak and two shoulder peaks distributed in the wavelength range of 430 - 475 nm. The two shoulder peaks include a first shoulder peak and a second shoulder peak located on both sides of the main peak respectively. The peak wavelength of the first shoulder peak is less than that of the second shoulder peak, and the peak intensity of the first shoulder peak is greater than that of the second shoulder peak. It should be noted that multiple narrow-band chips are used to generate multiple narrow-band blue light sources with different peak wavelengths and half-wave widths all less than 30 nm. After mixing multiple narrow-band blue light sources, a wide-band blue light source with a wide-band blue light spectral waveform diagram can be formed. This wide-band blue light source can also be converted into white light with a high similarity to the solar spectrum / visible light spectrum after being excited by the phosphor in the fluorescent glue layer.

[0047] In a specific solution, the half-wave width of the narrow-band chip is 10 - 25 nm. For example, the half-wave width of the narrow-band chip can be 10 nm, 15 nm, 18.5 nm, 19 nm, 20 nm, 23 nm, 24 nm, 25 nm.

[0048] In a specific solution, the peak intensity A2 of the main peak and the peak intensity B2 of the first shoulder peak satisfy B2 / A2 = 20% - 95%. For example, the value of B2 / A2 can be 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%. By adjusting the peak intensity relationship between the main peak and the first shoulder peak, the waveform of the mixed white light spectrum can be further improved, and its similarity to the solar spectrum / visible light spectrum can be further enhanced. Preferably, B2 / A2 = 75% - 95%. The peak intensity A2 of the main peak and the peak intensity C2 of the second shoulder peak satisfy C2 / A2 = 20% - 99%. For example, the value of C2 / A2 can be 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 91%, 92%, 93%, 94%, 95%, 96%, 97%, 98%, 99%. Preferably, C2 / A2 = 65% - 85%.

[0049] In a specific embodiment, the peak wavelength of the main peak is between 435 nm and 455 nm. For example, the peak wavelength of the main peak can be 435 nm, 436 nm, 437 nm, 438 nm, 439 nm, 440 nm, 441 nm, 442 nm, 443 nm, 444 nm, 445 nm, 446 nm, 447 nm, 448 nm, 449 nm, 450 nm, 451 nm, 452 nm, 453 nm, 454 nm, 455 nm. Preferably, the peak wavelength of the main peak is between 445 nm and 452.5 nm.

[0050] The peak wavelength of the first shoulder peak is between 410 nm and the peak wavelength of the main peak minus 5 nm; for example, when the peak wavelength of the main peak is 449 nm, the peak wavelength of the first shoulder peak is between 410 nm and 445 nm. Preferably, the peak wavelength of the first shoulder peak is between 410 nm and 444 nm. For example, the peak wavelength of the first shoulder peak can be 410 nm, 411 nm, 412 nm, 413 nm, 414 nm, 415 nm, 420 nm, 425 nm, 430 nm, 435 nm, 440 nm, 444 nm.

[0051] The peak wavelength of the second shoulder peak is between the peak wavelength of the main peak plus 10 nm and 490 nm; for example, when the peak wavelength of the main peak is 449 nm, the peak wavelength of the second shoulder peak is between 459 nm and 490 nm. Preferably, the peak wavelength of the second shoulder peak is between 459 nm and 490 nm. For example, the peak wavelength of the second shoulder peak can be 459 nm, 460 nm, 465 nm, 470 nm, 475 nm, 480 nm, 485 nm, 490 nm.

[0052] With such a setting, by regulating the peak wavelengths of the main peak and the shoulder peaks in the spectral waveform diagram of the hybrid blue light source generated by multiple narrow-band chips, the spectral waveform diagram of the wide-band blue light source can be further optimized, so that its similarity to the standard white light spectrum is better, and high color rendering index (Ra), high color protection index (Rg) and high color fidelity index (Rf) can be achieved without affecting the brightness of the light-emitting device, thereby accurately restoring the color of the illuminated object, protecting the color vividness or maintaining the color authenticity, and further improving the light quality.

[0053] In some embodiments, the first light source 1 has a plurality of first chips 11, the first fluorescent layer 12 covers the plurality of first chips 11 at the same time, and the connection mode of the first chips 11 can be in series or in parallel. Here, it is preferably that the plurality of first chips 11 are in parallel. In this way, the voltages of the plurality of first chips 11 can be kept consistent, which is beneficial to improving the consistency of the light output effect and can improve the stability of the structure.

[0054] There is one second chip 21 in the second light source 2. One second chip 21 can be connected in parallel or in series with multiple first chips 11. Here, it is preferably that one second chip 21 is connected in parallel with multiple first chips 11. In this way, the voltages of the first chip 11 and the second chip 21 can be kept the same, so as to ensure that the brightness among multiple first chips 11 and the brightness between the first chip 11 and the second chip 21 are stably consistent. Moreover, the circuit design of this solution at the client side is simple, only one output is needed, and the customer satisfaction is high.

[0055] As Figure 6 shown, it is the spectrogram of the embodiment and multiple comparative examples. Among them, the light of Embodiment 1 is the mixed light formed by the white light formed by the first light source 1 and the deep red light formed by the second light source 2, which is a solar-like spectrum with beneficial red light gain. Comparative Example 1 is the mixed light formed when the device with a solar-like spectrum obtained by the method of exciting phosphors with multiple blue LED chips and multiple red light devices work simultaneously, which is a solar-like spectrum with beneficial red light. Comparative Example 2 is the light emitted by the device with a solar-like spectrum obtained by the method of exciting phosphors with multiple blue LED chips, which is only close to the solar spectrum at 425 - 690 nm.

[0056] Referring to the following table, it can be seen that, compared with the comparative examples, the embodiment has higher color rendering index (Ra), color protection degree index (Rg) and color fidelity index (Rf), so that the color of the illuminated object can be accurately restored, the color vividness can be protected or the color authenticity can be maintained, which is beneficial to improving the light quality.

[0057] Serial number Ra Rf Rg Fitting coefficient Example 1 99.1 98.3 100.7 0.9967 Comparative Example 1 98.6 98 100.5 0.9906 Comparative Example 2 98.3 95 98.3 0.9864

[0058] The basic principle of the present application has been described above in combination with specific embodiments. However, it should be noted that the advantages, benefits, effects, etc. mentioned in the present application are only examples and not limitations. It cannot be considered that these advantages, benefits, effects, etc. are essential for each embodiment of the present application. In addition, the above disclosed specific details are only for the purposes of illustration and easy understanding, rather than limitations. The above details do not limit the present application to necessarily adopt the above specific details to implement.

[0059] The block diagrams of the devices, apparatuses, equipment, and systems involved in this application are only illustrative examples and are not intended to require or imply that they must be connected, arranged, and configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, equipment, and systems can be connected, arranged, and configured in any way. Words such as "including", "comprising", "having", etc. are open-ended terms, meaning "including but not limited to", and can be used interchangeably with each other. The words "or" and "and" used herein refer to the phrase "and / or", and can be used interchangeably with it, unless the context clearly indicates otherwise. The word "such as" used herein refers to the phrase "such as but not limited to", and can be used interchangeably with it.

[0060] It should also be noted that in the devices, equipment, and methods of this application, each component or each step can be decomposed and / or recombined. These decompositions and / or recombinations should be regarded as equivalent solutions of this application.

[0061] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to the broadest scope consistent with the principles and novel features disclosed herein.

[0062] It should be understood that the qualifiers "first", "second", "third", "fourth", "fifth", and "sixth" used in the description of the embodiments of this application are only for more clearly elaborating the technical solutions and cannot be used to limit the protection scope of this application.

[0063] The above description has been given for purposes of illustration and description. In addition, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although multiple example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, changes, additions, and sub-combinations thereof.

Claims

1. An LED lighting device, characterized in that, It includes a bracket, as well as a first light source and a second light source arranged on the bracket. The first light source has a first chip and a first fluorescent layer covering the first chip. The first chip is used to emit blue light with a half-wave width greater than or equal to 30 nm. The first fluorescent layer has at least one red phosphor and at least one green phosphor to be excited by the first chip to form white light. The second light source has a second chip and a second fluorescent layer. The second fluorescent layer has a deep red phosphor with an excitation spectrum peak wavelength greater than 690 nm to be excited by the second chip to form deep red light with a peak within the range of 630 - 830 nm.

2. The LED lighting device according to claim 1, wherein, The mass ratio of the deep red phosphor to the second fluorescent layer is 20% - 50%.

3. The LED lighting device according to claim 1, wherein The material of the dark red phosphor is at least one of GaTa04: 0.5% Cr, GaTa04: 0.5% Cr, 0.9% Yb, ScTa04: 0.9% Cr, InTa04: 1% Cr, Mg7Ga2GeO 12 : 0.09Cr, Gd3Y 0.5 In 0.5 Ga40 12 , Gd3Zn2GaGe20 12 : 2% Cr 3+ , 0.2% Yb 3+ , Gd3Zn 0.8 Ga 3.4 Ge 0.8 O 12 : 1.5% Cr 3+ , Sr3Ga2Ge40 14 : 3% Cr / 15% Cr, Sr3Ga 1.98 In 0.02 Ge4O 14 : 3% Cr, Sr3Ga 1.98 In 0.02 Ge40 14 : 3% Cr, 5% Yb, La3SnGa5O 14 : 0.015Cr 3+ , ZnTa2O6: 0.05Cr 3+ , LiScGe04: 0.1Cr 4+ , La2MgHfO6: 1% Cr 3+ / 0.5% Yb 3+ , LaMg 0.5 Sn 0.5 O3: Cr 3+ , Mg 14 Ge5O 24 : 0.25Cr 3+ / Cr 4+ , and Ca3Y2Ge30 12 : Cr 3+ among others.

4. The LED lighting device according to claim 1, wherein The first fluorescent layer has a red phosphor, a green phosphor, and a cyan phosphor. The mass ratio of the red phosphor to the first fluorescent layer is 4% - 7%. The mass ratio of the green phosphor to the first fluorescent layer is 20% - 24%. The mass ratio of the cyan phosphor to the first fluorescent layer is 20% - 24%.

5. The LED lighting device according to claim 1, characterized in that, The second chip is set as a single blue light chip for emitting blue light with a main wavelength of 430 - 475 nm.

6. The LED lighting device according to claim 1, characterized in that, The second chip is set as a single red light chip for emitting red light with a peak wavelength of 620 - 670 nm.

7. The LED lighting device according to claim 1, wherein The second chip is used to emit blue light with a half-wave width greater than or equal to 30 nm. The second chip is set as a single wide-band chip or multiple narrow-band chips.

8. The LED light-emitting device according to claim 1, characterized in that, The first chip is set as a single wide-band chip or multiple narrow-band chips.

9. The LED lighting device according to claim 8, characterized in that, The first chip is set as three of the narrow-band chips.

10. The LED lighting device according to claim 7 or 8, characterized in that, The spectrum of the wide-band chip has a main peak and a shoulder peak distributed within the wavelength range of 430 - 475 nm, and the peak wavelength of the shoulder peak is greater than the peak wavelength of the main peak.

11. The LED light-emitting device according to claim 7 or 8, characterized in that, The spectra of the multiple narrow-band chips have a main peak and two shoulder peaks distributed within the wavelength range of 430 - 475 nm. The two shoulder peaks include a first shoulder peak and a second shoulder peak located on both sides of the main peak respectively. The peak wavelength of the first shoulder peak is less than the peak wavelength of the second shoulder peak, and the peak intensity of the first shoulder peak is greater than the peak intensity of the second shoulder peak.

12. The LED lighting device according to claim 1, wherein A plurality of the first chips are arranged in parallel and are all covered by the first fluorescent layer; one second chip is arranged and is in parallel with the plurality of first chips.

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