Method and device for preparing perovskite thin film through gas heating
The preparation of perovskite films by gas heating method solves the problem of preparing high-quality perovskite films on a large scale, achieves uniformity and stability, simplifies the preparation process and reduces costs.
Patent Information
- Application Number
- CN202510226998.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-27
- Publication Date
- 2025-07-08
AI Technical Summary
The existing technology is difficult to achieve large-area high-quality perovskite films, and the existing methods are costly and complex in the process, and cannot meet the requirements of large-area uniformity.
Perovskite films are prepared by gas heating method. By mixing the perovskite raw material solution with hot inert gas, uniform heating is performed, and then coated on the substrate and heat treatment is performed, the preparation process is simplified and high temperature conditions and complex devices are avoided.
The uniformity and stability of a large-area perovskite film are achieved, the crystallinity and morphological uniformity of the film are improved, the preparation process is simplified, and the cost is reduced.
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Abstract
Description
Technical Field
[0001] The present disclosure belongs to the technical field of perovskite thin film preparation, and particularly relates to a method and device for preparing perovskite thin films by gas heating. Background Art
[0002] Due to their excellent optoelectronic properties, perovskite thin films are widely used in fields such as solar cells, LED lights, and photodetectors. The uniformity of large-area perovskite thin films is an important consideration during the preparation process. During coating, deposition, or crystallization, it is very challenging to maintain the uniformity of the material over the entire large area. Uneven coating or deposition can lead to local performance differences and affect the performance of the overall device. Therefore, a method for preparing high-quality perovskite thin films over a large area needs to be developed.
[0003] However, most of the current methods for preparing perovskite thin films involve mixing various raw materials and then heating them in a tube furnace, followed by high-temperature calcination treatment. This method has a long processing time,
[0004] a high temperature, and requires the use of devices such as tube furnaces during the preparation process, with high requirements for the device and its sealing. Secondly, there is also a method of mixing various raw materials to form a mixed solution, adding phenethylamine to form a mixed perovskite solution, and obtaining perovskite thin films through spin coating and heat treatment. The phenethylamine used in this method is an organic reagent, with a high cost, a complex preparation process, and it is impossible to achieve the large-area preparation of perovskite thin films.
[0005] Therefore, a simple and feasible method and device for preparing high-quality perovskite thin films over a large area need to be proposed. Summary of the Invention
[0006] The present disclosure aims to at least solve one of the technical problems existing in the prior art, and provides a method and device for preparing perovskite thin films by gas heating.
[0007] On the one hand, the present disclosure provides a method for preparing perovskite thin films by gas heating, the method comprising:
[0008] Mixing and dissolving a first component and a second component to form a solution containing perovskite raw materials;
[0009] Injecting a thermally inert gas into the solution containing perovskite raw materials, and heating the mixed solution by gas heating to obtain a perovskite solution;
[0010] Coating the perovskite solution on a substrate and performing heat treatment to obtain a perovskite thin film.
[0011] Optionally, the temperature for heating the mixed solution by gas heating is 40 - 50 °C, and the time is more than 120 minutes.
[0012] Optionally, the temperature of heating the mixed solution by the gas heating method is 40-60°C; and / or,
[0013] The temperature of the heat treatment is 100-200°C, and the treatment time is 10 min-12 h.
[0014] Optionally, the thermally inert gas is nitrogen.
[0015] Optionally, the first component is at least one of FAX, MAX, and CsX;
[0016] The second component is PbX, where X is I - , Br - , Cl - and at least one of them.
[0017] Optionally, the substrate is glass, a silicon wafer, or a flexible conductive substrate.
[0018] On the other hand, the present disclosure provides an apparatus for preparing a perovskite film by gas heating, the apparatus including a reaction vessel, a condenser, a condensation reflux pipe, a gas heating device, and a gas delivery pipe; wherein,
[0019] One end of the condenser is inserted into the reaction vessel, and the other end is connected to the condensation reflux pipe. The condensation reflux pipe is connected to one end of the gas heating device, the other end of the gas heating device is connected to one end of the gas delivery pipe, and the other end of the gas delivery pipe is connected to the reaction vessel.
[0020] Optionally, an exhaust port is provided at the top of the reaction vessel, and the condenser passes through the exhaust port;
[0021] An air inlet is provided in the solution reaction area of the reaction vessel, and the gas delivery pipe is connected to the air inlet.
[0022] Optionally, a temperature sensor is correspondingly provided at the solution reaction area of the reaction vessel.
[0023] Optionally, a selective permeable membrane is provided at the end of the gas delivery pipe facing the reaction vessel.
[0024] The present disclosure provides a method and apparatus for preparing perovskite thin films by gas heating. The method includes: mixing and dissolving a first component and a second component to form a solution containing perovskite raw materials; injecting a thermally inert gas into the solution containing perovskite raw materials, and heating the mixed solution by gas heating to obtain a perovskite solution; coating the perovskite solution on a substrate and performing heat treatment to obtain a perovskite thin film. The preparation method of the present invention is simple, does not require high-temperature conditions, does not require complex devices, and has the advantages of uniform heating of the perovskite solution and uniform dispersion of the colloid by the stirring of the gas flow. The prepared thin film has good crystallinity, uniform morphology and stable quality. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] Figure 1 FIG. is a schematic structural diagram of a method for preparing perovskite thin films by gas heating according to an embodiment of the present disclosure;
[0026] Figure 2 FIG. is a schematic structural diagram of an apparatus for preparing perovskite thin films by gas heating according to another embodiment of the present disclosure;
[0027] Figure 3 FIG. is a schematic structural diagram of an air supply pipe according to another embodiment of the present disclosure;
[0028] Figure 4 FIG. is a transmission electron microscope image of a perovskite thin film obtained in Example 1 of the present disclosure;
[0029] Figure 5 FIG. is a transmission electron microscope image of a perovskite thin film obtained in Comparative Example 1 of the present disclosure. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0030] To enable those skilled in the art to better understand the technical solutions of the present disclosure, the present disclosure will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present disclosure, and are part of the embodiments of the present disclosure, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present disclosure without creative efforts shall fall within the protection scope of the present disclosure.
[0031] As Figure 1 shown, on the one hand, the present disclosure provides a method S100 for preparing perovskite thin films by gas heating, which specifically includes the following steps S110 to S130:
[0032] S110. Mix and dissolve each raw material to form a solution containing perovskite raw materials.
[0033] Specifically, mix and dissolve a first component and a second component. The first component is at least one of FAX, MAX, and CsX; the second component is PbX, and X is I - 、Br- , Cl - at least one of
[0034] In some preferred embodiments, the second component is a solution formed by PbI2, PbBr2, and CsI, and the mass ratio of PbI2, PbBr2, and CsI is preferably (6 - 10):(1 - 3):1, more preferably (7 - 9):(1.5 - 2.5):1, and most preferably 8:2:1; and this solution needs to be prepared with DMSO and DMF solvents, where the volume ratio of DMSO and DMF in the mixed solvent is 1:(3 - 5), more preferably 1:(3.5 - 4.5), and most preferably 1:4.
[0035] As a further preferred option, the amount of the solvent is preferably such that the concentration of PbI2 in the solvent is 1.2 - 1.4 mol / L, more preferably 1.3 mol / L.
[0036] In some other preferred embodiments, the first component is a solution of formamidinium iodide FAI and MABr dissolved in isopropanol, where the mass ratio of FAI and MABr is preferably (5 - 7):1, more preferably (5.5 - 6.5):1, and most preferably 6:1.
[0037] As a further preferred option, the mass ratio of FAI and isopropanol is preferably (6 - 6.5):1, more preferably (6.1 - 6.4):1, and most preferably (6.2 - 6.3):1.
[0038] S120. Inject a thermally inert gas into the solution containing the perovskite raw materials, and heat the mixed solution by means of gas heating to obtain a perovskite solution.
[0039] Specifically, when heating the solution by means of gas heating, injecting the thermally inert gas into the solution makes the solution heat more evenly and improves the crystallinity of the solvent solution.
[0040] It should be noted that during the reaction process, the reaction uniformity and performance of the solution can be optimized by controlling parameters such as the temperature, speed, and time of gas treatment. For example, the range of injecting the inert gas for heating is between 40 - 50 °C, the time is more than 120 minutes, and the speed of injecting the inert gas is related to the required temperature and is a dynamic parameter, which can be specifically set according to the actual temperature.
[0041] In some preferred embodiments, the temperature of injecting the inert gas for heating is preferably 40 °C, 45 °C, 50 °C, etc., and the time is preferably 130 min, 140 min, 150 min, etc.
[0042] In some other preferred embodiments, the thermally inert gas is nitrogen, which can react to form NH4I, changing the crystallization reaction path and further improving the crystallization quality. Moreover, the stirring effect brought by the thermally inert gas flow can replace the rotor magnetic stirring, avoiding experimental errors caused by the rotor removing part of the solution when removed.
[0043] S130. Coating the perovskite solution on a substrate and performing heat treatment to obtain a perovskite thin film.
[0044] In some preferred embodiments, the coating is preferably carried out in a glove box filled with a protective gas. The protective gas is preferably nitrogen, and the heat treatment temperature range for the thin film crystallization is between 100°C and 200°C. For example, 100°C, 130°C, 150°C, 180°C, 200°C, etc. The treatment time is between 10 minutes and 12 hours. For example, 10 minutes, 30 minutes, 1 hour, 3 hours, 6 hours, 10 hours, 12 hours, etc.
[0045] In some other preferred embodiments, the substrate is glass, a silicon wafer, a flexible conductive substrate or other suitable supporting materials.
[0046] This embodiment further improves the crystallinity and stability of the thin film by coating and heat treating the thin film. Among them, the rotation speed of spin coating is preferably 2000 - 4000 rpm.
[0047] The preparation method of the present invention is simple, without high temperature conditions and complex devices. Moreover, due to the uniform heating of the perovskite solution and the stirring of the gas flow, the colloid has the advantage of uniform dispersion. The prepared thin film has good crystallinity, uniform morphology and stable quality. Therefore, the method of the present invention can greatly improve the performance of the perovskite thin film, contributing to the promotion of the mass production type perovskite thin film forming technology.
[0048] It should be understood that coating the perovskite solution on a substrate can prepare a perovskite solar cell. The specific process includes:
[0049] 1) The substrate is successively soaked and ultrasonically treated with distilled water, acetone, isopropyl alcohol, and ethanol, and an organic-inorganic hybrid hole transport layer is deposited on the substrate. Here, the substrate is preferably conductive glass, such as ITO glass or FTO glass, etc. The thickness of the glass is preferably 1 - 4 mm, more preferably 2 - 3 mm, and most preferably 2.5 mm. The thickness of ITO or FTO is preferably 50 - 200 nm, more preferably 100 - 150 nm, and most preferably 120 - 130 nm. Secondly, the thickness of the deposited thin film should be 20 - 40 nm, the annealing temperature is 100 - 140°C, and the time is 10 - 60 min.
[0050] 2) Clean the substrate and place it on a heating stage. Heat it, and spray pyrolytically deposit the isopropanol precursor solution of titanium acetylacetonate onto the substrate. Then, keep it warm for 30 min and then cool it down to obtain a TiO2 dense layer.
[0051] 3) Coating the perovskite solution described above on the substrate deposited with the hole transport layer to form a perovskite film. Among them, first prepare the solution. Preferably, spin-coat 50 - 70 μL of the solution prepared from the second component at a speed of 3000 rpm, place it at room temperature for 30 - 40 min, and let the solvent evaporate naturally. Then, spin and coat 1000 - 2000 μL of the solution prepared from the first component while raising the speed from 4 - 6 s to 3000 rpm. Heat it in a glove box at 80 - 120 °C for 30 min, and then raise the temperature to 130 - 170 °C and heat for 20 - 40 min to form perovskite.
[0052] 4) Prepare a slurry of titanium dioxide in an appropriate ratio with ethanol, prepare an isopropanol solution of titanium acetylacetonate with a volume ratio of (1 - 1.2):(10 - 11) as the precursor solution, place the substrate on a heating stage, and spray pyrolytically deposit the precursor solution onto the substrate to form an electron transport layer.
[0053] 5) Vacuum deposit the electrodes.
[0054] As Figure 2 shown, on the other hand, the present disclosure proposes a device 200 for preparing a perovskite film by gas heating. The device 200 includes a reaction vessel 210, a condenser 220, a condensation reflux pipe 230, a gas heating device 240, and a gas delivery pipe 250. Among them, the reaction vessel 210 is used to hold the reaction solution 300. One end of the condenser 220 is inserted into the reaction vessel 210, the other end of the condenser 220 is connected to the condensation reflux pipe 230, the condensation reflux pipe 230 is connected to one end of the gas heating device 240, the other end of the gas heating device 240 is connected to one end of the gas delivery pipe 250, and the other end of the gas delivery pipe 250 is connected to the reaction vessel 210.
[0055] In this embodiment, by connecting the gas heating device to the reaction vessel, injecting the thermally inert gas into the solution, the uniform heating of the reaction solution is realized. The stirring of the gas flow makes the colloid have the advantage of uniform dispersion. The prepared film has good crystallinity, uniform morphology, and stable quality. Moreover, the device has a simple structure, does not require complex devices, and has a low cost. Compared with using devices such as heating stages, in this embodiment, the thermally inert gas can be introduced into the reaction vessel, and a certain stirring effect can be achieved based on the flow of the thermally inert gas, without the need to separately set a stirring device, thus simplifying the device structure.
[0056] It should be noted that the reaction vessel in this embodiment can be a reaction flask, etc. A sealing cover is provided at the top of the reaction vessel, and the reaction vessel is used to hold the reaction solution.
[0057] In some preferred embodiments, as Figure 2 shown, an exhaust port is provided at the top of the reaction vessel 210, and the condenser tube 220 is inserted through the exhaust port so that the vapor generated after the reaction of the reaction solution is cooled and then refluxed into the gas heating device to form a thermally inert gas which is further injected into the reaction solution to improve the reaction efficiency.
[0058] In some other preferred embodiments, as Figure 2 shown, an air inlet is provided in the solution reaction area of the reaction vessel 210, and the air supply pipe 250 is connected to the air inlet. It should be understood that when the reaction solution is in the reaction vessel, it is generally located in the bottom area of the reaction vessel. Therefore, when the air inlet is located at a position corresponding to the solution reaction area, this reaction area is generally located in the bottom area close to the reaction vessel.
[0059] As a further preferred solution, as Figure 3 shown, the end of the air supply pipe 250 is provided with a selective permeable membrane, that is, a selective permeable membrane 251 is provided at the end where the air supply pipe 250 is connected to the reaction vessel 210, so that the thermally inert gas enters the reaction vessel 210, while the solvent molecules cannot pass through, ensuring that the solvent does not leak to the outside of the reaction vessel.
[0060] In some other preferred embodiments, as Figure 2 shown, a temperature sensor 260 is correspondingly provided in the solution reaction area of the reaction vessel 210 for measuring the temperature of the reaction solution to facilitate the control of the reaction temperature.
[0061] The perovskite solution prepared by using the device of the present invention has the advantages of uniform heating and uniform dispersion of the colloid by the stirring of the air flow. Moreover, based on this device, the reaction temperature for preparing the thin film is relatively low, no high-temperature environment is required, and the obtained thin film has good crystallinity, uniform morphology and stable quality.
[0062] The preparation method of the perovskite thin film will be further described below with specific examples:
[0063] Example 1
[0064] This example gives the preparation process of the perovskite solar cell, including:
[0065] S1. Soak the FTO conductive glass in distilled water, acetone, isopropanol and ethanol in ultrasound for 15 minutes in turn, and deposit an organic-inorganic hybrid hole transport layer on the FTO transparent conductive substrate; prepare a mixed solution of inorganic nickel oxide nanocrystals and organic tetrathiafulvalene derivatives, the solvent is a mixed solvent of DMF and deionized water, and the ratio of inorganic nickel oxide nanocrystals to organic tetrathiafulvalene derivatives is 3:1; spin and coat the solution at a speed of 3000 rpm, the thickness of the deposited film should be 30nm, the annealing temperature is 120℃, and the time is 30min; the glass thickness is 2.5mm; the FTO thickness is 130nm.
[0066] S2. First, blow the cleaned FTO conductive glass clean and place it in UV ozone treatment for 15 minutes. Prepare 9.9mL of isopropanol solution of titanium acetylacetonate with a volume ratio of 1:10 as a precursor solution, place the FTO conductive glass on a heating table, heat it to 500℃ for 20 minutes, and use the precursor solution spray to pyrolyze and deposit it on the substrate. Then keep it warm for 30 minutes and then cool it down to obtain a dense TiO2 layer.
[0067] A titanium dioxide slurry with an appropriate ratio was prepared with ethanol, and 60 μL was spin-coated on the dense layer at a speed of 5000 rpm for 20 seconds using a spin coater, and then annealed on a hot stage at 100° C. for 10 minutes.
[0068] S3. Use hot inert gas to heat and stir to dissolve the drugs uniformly, the heating temperature is 50℃: use a mixed solvent of DMSO and DMF in a ratio of 1:4 to prepare a solution of PbI2, PbBr2 and CsI in a mass ratio of 8:2:1, and then prepare a solution of formamidinium iodine FAI and CH3NH3Br (MABr) dissolved in isopropanol in a concentration ratio of 6:1, and the mass ratio of FAI to isopropanol is 6.2:1. In a glove box protected by N2, spin-coat 60μL of the PbI2 / PbBr2 / CsI solution at a speed of 3000rpm on the substrate where the hole transport layer has been deposited, and leave it at room temperature for 30-40min to allow the solvent to evaporate naturally. Then, the speed was increased to 3000 rpm for 5 seconds while spinning and coating 1500 μL of FAI, MAI / IPA (isopropyl alcohol) solution, heated at 100 °C for 30 min in a glove box, and then heated to 150 °C for 30 min to generate ternary cation perovskite. The color of the film gradually deepened from yellow to dark reddish brown or black perovskite crystals FAXMAYCs 1-x-y PcqI 3-z .
[0069] like Figure 4 As shown, the perovskite crystals prepared by the gas heating method in this embodiment are more uniform and the particle size is increased, indicating that this method improves the uniformity of solution stirring and heating, helps to optimize the uniformity and quality of film formation, and thus improves the photoelectric performance of the battery.
[0070] S4. Prepare the electron transport layer. Prepare a slurry of titanium dioxide in an appropriate ratio with ethanol. Prepare 9.9 mL of an isopropanol solution of titanium acetylacetonate with a volume ratio of 1:10 as the precursor solution. Place the substrate on a heating stage, heat it to 500 °C, and spray pyrolytically deposit the precursor solution onto the substrate. Then keep it warm for 20 min and then cool down. Then use a spin coater to spin coat 60 μL on the dense layer at a speed of 5000 rpm for 20 s, and then anneal it on the heating stage at 100 °C for 10 min.
[0071] S5. Finally, vacuum deposit Cu electrodes and Au electrodes with a thickness of
[0072] Furthermore, in this Example 1, a Newport Thermal Oriel 911921, 000W solar simulator is also used. The light intensity of the simulator is calibrated to one sun (100 mW / cm 2 ²) using a KG 5 silicon cell. A Keithley 2400 digital source meter is used to test the current density - voltage (J - V) characteristic curves of the PSCs; the voltage range for the forward and reverse scans of the cell is from -0.2 to 1.2 V, and the scan rate is 100 mV / s. The performance of the cell prepared in this Example 1, such as Voc (open - circuit voltage), Jsc (short - circuit current), FF (fill factor), and EFF (photovoltaic conversion efficiency), is detected, and the detection results are shown in Table 1 below.
[0073] As shown in Table 1, the short - circuit current of the cell prepared in this Example 1 is 1.324048 mA, the open - circuit voltage is 0.9923 V, the maximum power is 0.9514 mW, the maximum current is 1.219709 mA, the maximum voltage is 0.78 V, the photovoltaic conversion efficiency is 15.22197%, and the fill factor is 72.408%.
[0074] Comparative Example 1
[0075] The preparation process of this comparative example is the same as that of Example 1, except that the heating method in step S3 is changed. For example, a heating stage is used to configure the mixed solution and a rotor is used for stirring. The obtained perovskite thin film is as Figure 5 shown. The perovskite crystals prepared in this comparative example have poor uniformity and small particle size, and this kind of crystal is not conducive to improving the film - forming uniformity and quality.
[0076] Furthermore, in this Comparative Example 1, the performance of the prepared cell, such as Voc (open - circuit voltage), Jsc (short - circuit current), FF (fill factor), and EFF (photovoltaic conversion efficiency), is also detected, and the detection results are shown in Table 1 below.
[0077] As shown in Table 1, the short-circuit current of the battery prepared in Comparative Example 1 is 1.304909 mA, the open-circuit voltage is 0.990351 V, the maximum power is 0.935555 mW, the maximum current is 1.19943 mA, the maximum voltage is 0.78 V, the photoelectric conversion efficiency is 14.96888%, and the fill factor is 72.39354%.
[0078] Example 2
[0079] The preparation process of this example is the same as that of Example 1, except that the conditions in step S3 are changed. For example, a solution of PbI2, PbBr2, CsI, and FAI with a mass ratio of 8:2:1:10 is prepared using a mixed solvent of DMSO and DMF at a ratio of 1:4, and heated and stirred with a thermally inert gas to dissolve the drugs evenly, with the heating temperature at 50°C. In a glove box under N2 protection, the mixed solution is spin-coated on the substrate on which the hole transport layer has been deposited at a speed of 3000 rpm, heated in the glove box at 100°C for 30 min, and then heated to 150°C for 30 min, and the color of the film gradually deepens, finally changing from yellow to dark red-brown or black perovskite crystals FAxMAyCs1-x-yPbIzBr3-z.
[0080] Furthermore, the Voc (open-circuit voltage), Jsc (short-circuit current), FF (fill factor), and EFF (photoelectric conversion efficiency) performance of the battery prepared in this Example 2 were also detected, and the detection results are shown in Table 1 below.
[0081] As shown in Table 1, the short-circuit current of the battery prepared in this Example 2 is 1.330222 mA, the open-circuit voltage is 0.999563 V, the maximum power is 0.950574 mW, the maximum current is 1.218684 mA, the maximum voltage is 0.78 V, the photoelectric conversion efficiency is 15.20918%, and the fill factor is 71.49099%.
[0082] Comparative Example 2
[0083] The preparation process of this comparative example is the same as that of Example 2, except that the heating method in step S3 is changed. For example, a heating stage is used to prepare the mixed solution and a rotor is used for stirring.
[0084] Furthermore, the Voc (open-circuit voltage), Jsc (short-circuit current), FF (fill factor), and EFF (photoelectric conversion efficiency) performance of the battery prepared in this Comparative Example 2 were also detected, and the detection results are shown in Table 1 below.
[0085] As shown in Table 1, the short-circuit current of the battery prepared in Comparative Example 2 is 1.300974 mA, the open-circuit voltage is 0.993301 V, the maximum power is 0.909353 mW, the maximum current is 1.165837 mA, the maximum voltage is 0.78 V, the photoelectric conversion efficiency is 14.54964%, and the fill factor is 71.08484%.
[0086] Table 1 Detection Results of Battery Performance of Each Example and Comparative Example
[0087]
[0088] In summary, it can be seen from Example 1 and Comparative Example 1 that the values of the short-circuit current, open-circuit voltage, short-circuit current, photoelectric conversion efficiency, etc. of Example 1 are all larger. It can be seen from Example 2 and Comparative Example 2 that the values of the short-circuit current, open-circuit voltage, short-circuit current, photoelectric conversion efficiency, etc. of Example 2 are all larger, and the performance is more prominent. That is to say, under the condition of heating and stirring with a thermally inert gas to dissolve the medicine evenly, the thin-film crystallization quality is higher, and the obtained battery has a higher open-circuit voltage, short-circuit current, photoelectric conversion efficiency and fill factor, and the battery performance is better.
[0089] It can be understood that the above embodiments are merely exemplary embodiments adopted to illustrate the principle of the present disclosure. However, the present disclosure is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present disclosure, and these modifications and improvements are also regarded as the protection scope of the present disclosure.
Claims
1. A method for preparing perovskite thin films by gas heating, characterized in that, The method includes: Mixing and dissolving a first component and a second component to form a solution containing perovskite raw materials; Injecting a thermally inert gas into the solution containing perovskite raw materials, and heating the mixed solution by means of gas heating to obtain a perovskite solution; Coating the perovskite solution on a substrate, and performing heat treatment to obtain a perovskite thin film.
2. The method according to claim 1, wherein When heating the mixed solution by means of gas heating, the temperature is 40-50 °C and the time is more than 120 minutes.
3. The method according to claim 1, wherein The temperature of the heat treatment is 100-200 °C and the treatment time is 10 min-12 h.
4. The method according to claim 1, wherein The thermally inert gas is nitrogen.
5. The method according to claim 1, wherein The first component is at least one of FAX, MAX, and CsX, where X is I - , Br - or Cl - ; The second component is PbX, where X is I - , Br - or Cl - .
6. The method according to claim 1, wherein The substrate is glass, a silicon wafer or a flexible conductive substrate.
7. An apparatus for preparing perovskite thin films by gas heating, characterized in that, The device includes a reaction vessel, a condenser, a condensation reflux pipe, a gas heating device, and a gas delivery pipe; wherein, One end of the condenser is inserted into the reaction vessel, the other end is connected to the condensation reflux pipe, the condensation reflux pipe is connected to one end of the gas heating device, the other end of the gas heating device is connected to one end of the gas delivery pipe, and the other end of the gas delivery pipe is connected to the reaction vessel.
8. The device according to claim 7, characterized in that, An exhaust port is provided at the top of the reaction vessel, and the condenser passes through the exhaust port; An air inlet is provided in the solution reaction area of the reaction vessel, and the gas delivery pipe is connected to the air inlet.
9. The device according to claim 7, characterized in that, A temperature sensor is correspondingly provided at the solution reaction area of the reaction vessel.
10. The device according to claim 7, characterized in that, A selective permeable membrane is provided at one end of the gas delivery pipe facing the reaction vessel.