Plasma processing apparatus

Abstract

A plasma processing apparatus (1) is provided with: a vacuum container (2) in which a workpiece (W) is accommodated; a high-frequency window (WR) that introduces a high-frequency magnetic field into the vacuum container (2); an antenna (7) that is provided so as to face the high-frequency window (WR) and generates a high-frequency magnetic field; and a rotary table (3) on which the workpiece (W) is placed and rotated. Furthermore, the plasma processing apparatus (1) is provided with a shielding plate (4) which is provided inside the vacuum container (2) so as to face the high-frequency window (WR) above the rotary table (3), shields the plasma, and divides the inside of the vacuum container (2) into a plasma processing region (PA) and a cooling region (CA). A through hole (4b1) allowing a workpiece (W) placed on the rotary table (3) to pass through is formed in the rotary table (3).

Description

Technical Field

[0001] The present disclosure relates to a plasma processing apparatus. Background Art

[0002] There is known a plasma processing apparatus that generates plasma inside a vacuum chamber using an antenna. Depending on its type, the plasma processing apparatus performs a prescribed plasma process on an object to be processed using the generated plasma. Specifically, as for the plasma processing apparatus, there is known a device that performs a film removal process, which is a plasma process, for example, of removing (peeling off) a film from the surface of the object to be processed.

[0003] In addition, for example, Patent Document 1 discloses a film stripping device that irradiates an ion stream onto a coated material with a film attached thereto to strip the film from the coated material. The conventional film stripping device performs film stripping of the coated material by disposing the coated material to be covered at an ion stream concentration portion where two or more ion streams overlap and irradiating the coated material with an ion stream.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: International Publication No. 2016 / 163278 Summary of the Invention

[0007] Problems to be Solved by the Invention

[0008] However, in the prior art as described above, there is a problem that the film removal process of the object to be processed cannot be performed efficiently.

[0009] In view of the above problems, the present disclosure aims to provide a plasma processing apparatus capable of efficiently processing an object to be processed.

[0010] Means for Solving the Problems

[0011] To solve the above problems, a plasma processing apparatus according to one aspect of the present disclosure includes: a vacuum chamber that houses an object to be processed therein; a high-frequency window that introduces a high-frequency magnetic field for generating plasma inside the vacuum chamber into the vacuum chamber; an antenna that is disposed outside the vacuum chamber so as to face the high-frequency window and generates the high-frequency magnetic field; a rotating table on which the object to be processed is placed and that rotates inside the vacuum chamber; and a shielding plate that is disposed inside the vacuum chamber above the rotating table so as to face the high-frequency window, shields plasma, divides the inside of the vacuum chamber into a plasma processing region and a cooling region, and is formed with a through-hole that allows the object to be processed placed on the rotating table to pass through.

[0012] Effect of the Invention

[0013] According to an embodiment of the present disclosure, a plasma processing apparatus capable of efficiently processing an object to be processed can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 is a diagram showing the main part structure of the plasma processing apparatus according to Embodiment 1 of the present disclosure.

[0015] Figure 2 is a top view showing the main part structure of the plasma processing apparatus.

[0016] Figure 3 is to illustrate Figure 1 a structural example of the shown holder.

[0017] Figure 4 is a graph showing an example of the relationship between the electron density of the plasma and the sheath thickness in the plasma processing apparatus.

[0018] Figure 5 is a diagram showing an example of the relationship between the workpiece and the sheath in the film removal process.

[0019] Figure 6 is to illustrate Figure 1 the shielding plate shown and the plasma processing region and the cooling region formed thereby in the plasma processing apparatus.

[0020] Figure 7 is to show Figure 1 an example of the relationship between the rotation angle of the shown rotary table and the electron density of the plasma.

[0021] Figure 8 is a top view showing the main part structure of the plasma processing apparatus according to Embodiment 2 of the present disclosure.

[0022] Figure 9 is a diagram showing the main part structure of the plasma processing apparatus according to Embodiment 3 of the present disclosure.

[0023] Figure 10 is a diagram showing the main part structure of the plasma processing apparatus according to Embodiment 4 of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0024] 〔Embodiment 1〕

[0025] Hereinafter, Figures 1 to 3 Embodiment 1 of the present disclosure will be described in detail. Figure 1 ​​​​​​​​​​This is a diagram showing the main structure of the plasma processing apparatus 1 according to Embodiment 1 of the present disclosure. Figure 2 This is a top view showing the main structure of the plasma processing apparatus 1. Figure 3 This is an explanation of Figure 1 a diagram showing a structural example of the holder H shown.

[0026] In addition, in the following description, the plasma processing apparatus 1 will be exemplified. The plasma processing apparatus 1 performs the following film removal process as a prescribed plasma process: using inductively coupled plasma to remove a film from the surface of the workpiece W so as to regenerate the surface of the workpiece W as the object to be processed.

[0027] However, the present disclosure can be applied to a plasma processing apparatus that performs, for example, carburizing treatment, nitriding treatment, ashing treatment, or etching treatment on the surface of the workpiece W as a prescribed plasma process, which are metal surface treatments. In addition, the present disclosure can be applied to a plasma processing apparatus that performs the following film formation process as a prescribed plasma process, that is, a film formation process of forming a prescribed film on the surface of the workpiece W by plasma chemical vapor deposition (CVD) method or sputtering method.

[0028] <Structure of Plasma Processing Apparatus 1>

[0029] As Figure 1 shown, the plasma processing apparatus 1 according to Embodiment 1 includes a vacuum chamber 2, a rotary table 3, a shielding plate 4, a high-frequency window WR, and an antenna 7. In addition, the plasma processing apparatus 1 includes a cooling mechanism CM and an application mechanism SM. Further, in the plasma processing apparatus 1, the workpiece W is carried into / out of the inside of the vacuum chamber 2 (not shown) through a door provided in the vacuum chamber 2 by a transfer mechanism, for example. In addition to the above description, it may also be configured to open the vacuum chamber 2 and replace the workpiece W one by one or replace the workpiece W together with the rotary table 3.

[0030] The workpiece W may be, for example, a drill for metal processing made of a metal material such as tungsten carbide or high-speed tool steel. In addition, the workpiece W may be a tool other than a drill, such as an end mill, a mold, or a special tool, or a special part for an automobile or an airplane. The plasma processing apparatus 1 removes a film such as a diamond-like carbon film formed on the surface of the workpiece W by the prescribed plasma process.

[0031] <Vacuum Chamber 2>

[0032] The vacuum chamber 2 is made of a metal material, for example, and includes a chamber body 2a that constitutes a processing chamber for performing the prescribed plasma process on the workpiece W. In addition, asFigure 1 and Figure 2 As shown in Figure 2 , the container body 2a is configured in a cylindrical shape, for example. Further, an upper lid and a lower lid (not shown) are hermetically attached to the upper and lower openings of the container body 2a, and the vacuum container 2 is configured to reach a specified degree of vacuum by a vacuum pump (not shown) with a workpiece W accommodated therein. In addition, the vacuum container 2 is grounded via a ground wire (not shown), and a specified processing gas such as argon can be appropriately introduced into the interior of the vacuum container 2.

[0033] <Rotary table 3>

[0034] The rotary table 3 is made of a metal material, for example, and includes a disk-shaped table body 3a and a rotary shaft 3b provided at the central portion of the table body 3a. In addition, the rotary table 3 constitutes an application path for applying a specified bias voltage based on an application mechanism SM, and applies the bias voltage to the workpiece W. Further, in the rotary table 3, the rotary shaft 3b is hermetically attached to the lower lid of the vacuum container 2 so as to be rotatable, and a drive mechanism (not shown) is connected to the rotary shaft 3b. Moreover, in the rotary table 3, the rotary shaft 3b rotates in the R1 direction as shown in Figure 1 , whereby the table body 3a is configured to revolve (rotate) in the R1 direction inside the vacuum container 2. Figure 1 As shown in Figure 1 , the table body 3a revolves (rotates) in the R1 direction inside the vacuum container 2.

[0035] On the table body 3a, a plurality of holders H for supporting the workpiece W are provided, for example, and specified plasma processing for the workpiece W is sequentially performed inside a plasma processing region PA described later. In other words, the table body 3a rotates at a specified rotational speed (e.g., 10 rpm), and the film removal processing for each workpiece W is completed, for example, by rotating the table body 3a several times. In addition, in terms of effectively utilizing the high-density plasma inside the plasma processing region PA, it is preferable that the diameter of the table body 3a is as close as possible to the inner diameter of the container body 2a.

[0036] <Shielding plate 4>

[0037] The shielding plate 4 is made of a conductive material such as a metal material, for example, and is provided inside the vacuum container 2 above the rotary table 3 so as to face the high-frequency window WR. As Figure 2 shown in Figure 2 , the shielding plate 4 includes a shielding plate main body 4a that is V-shaped in plan view. As described later in Figure 6 Figure 6As shown, the shielding plate main body 4a is disposed inside the container main body 2a of the vacuum container 2 in a manner that is symmetric with respect to its central portion in the left - right direction and the respective left - and right - hand end portions are expanded by a prescribed angle centering around the central portion. Further, in the shielding plate 4, the shielding plate main body 4a shields the space between itself and the high - frequency window WR, causing the said space to function as a plasma processing region PA for performing the prescribed plasma processing on the workpiece W. In other words, the shielding plate 4 is configured such that the plasma generated by the high - frequency magnetic field from the high - frequency window WR is enclosed as much as possible inside the plasma processing region PA by the shielding plate main body 4a. That is, the shielding plate 4 has the function of shielding the plasma and dividing the interior of the vacuum container 2 into the plasma processing region PA and the cooling region CA described later.

[0038] Through - holes 4b1 and 4b2 are formed in the shielding plate main body 4a, and the workpiece W placed on the rotary table 3 and the holder H supporting it are allowed to pass through the through - holes 4b1 and 4b2. Thus, when the table main body 3a revolves, the workpiece W and the holder H can enter and exit the plasma processing region PA via the through - holes 4b1 and 4b2.

[0039] In addition, in the shielding plate 4, the potential of the shielding plate main body 4a is set to be floating (floating potential). Specifically, the respective left - and right - hand end portions of the shielding plate main body 4a are mounted on the inner wall surface 2b of the container main body 2a via insulators 4c ( Figure 2 ) containing a dielectric material. Thereby, even when the shielding plate 4 encloses the plasma in the plasma processing region PA, since the shielding plate 4 is not grounded, the shielding plate main body 4a can be made to have the plasma potential. As a result, in the shielding plate 4, disappearance of the plasma in the shielding plate main body 4a can be suppressed, and at the same time, the plasma can be efficiently enclosed in the plasma processing region PA, and the electron density of the plasma can be increased.

[0040] In addition to the above description, for example, the structure may also be such that the shielding plate main body 4a is mounted on the upper lid of the vacuum container 2. Further, for example, a dielectric material such as glass may be used to form the shielding plate 4. In this case, the setting of the insulator 4c can be omitted.

[0041] <High - frequency window WR>

[0042] The high - frequency window WR includes a metal plate 5 and a dielectric plate 6, and is configured to introduce the high - frequency magnetic field that generates plasma inside the container main body 2a of the vacuum container 2 into the interior of the container main body 2a. Specifically, a plurality of slits are provided in the metal plate 5, and the metal plate 5 is mounted on the container main body 2a so as to block the opening 2b1 provided in the inner wall surface 2b of the container main body 2a. Further, the dielectric plate 6 is mounted on the metal plate 5 so as to cover at least the said slits.

[0043] <Antenna 7>

[0044] The antenna 7 is configured to be linear, for example, and is made of a metal material such as copper. Further, the antenna 7 is arranged to face the high-frequency window WR outside the container body 2a along the vertical direction. Furthermore, the antenna 7 generates a high-frequency magnetic field using high-frequency power from the power supply 8 and introduces the high-frequency magnetic field into the interior of the container body 2a via the high-frequency window WR.

[0045] Specifically, one end of the antenna 7 is electrically connected to the power supply 8 via an impedance adjustment unit (not shown) having a matching circuit. In addition, the other end of the antenna 7 is electrically grounded via a variable capacitor (not shown). The power supply 8 supplies high-frequency power of 13.56 MHz to one end of the antenna 7 via the impedance adjustment unit, for example. In the plasma processing apparatus 1, a control unit (not shown) controls in such a manner that high-frequency power is efficiently supplied to the antenna 7 by changing the capacitance of the variable capacitor.

[0046] <Cooling mechanism CM>

[0047] The cooling mechanism CM is provided in a cooling region CA provided inside the container body 2a. The cooling region CA is constituted by the following space, that is, the space inside the container body 2a separated by the shielding plate 4 excluding the plasma processing region PA. In other words, the cooling region CA is the region on the side of the shielding plate 4 opposite to the antenna 7 inside the container body 2a. In addition, the cooling mechanism CM includes a cooling plate CM1 disposed in the cooling region CA, and the workpiece W is cooled using the cooling plate CM1.

[0048] Specifically, the cooling mechanism CM includes, for example, a cooling plate CM1 formed in an arc shape using a metal material and a pipe CM2. The pipe CM2 is provided on the inner wall surface 2b side of the container body 2a of the cooling plate CM1 and is used to circulate a cooling medium such as water. In addition, the cooling mechanism CM is provided inside the container body 2a such that the surface of the cooling plate CM1 contacts the holder H. Thus, in the first embodiment, the workpiece W can be cooled at a higher speed, and the processing rate of the workpiece W can be further increased. In addition, as described above, in the first embodiment, since the workpiece W can be cooled, the temperature rise of the workpiece W accompanying the plasma processing can be suppressed, and the damage to the workpiece W caused by the thermal load due to the temperature rise can be significantly suppressed. Furthermore, in the first embodiment, the cooling plate CM1 does not directly contact the workpiece W but contacts the holder H to cool the workpiece W, so that the workpiece W can be reliably cooled without being damaged.

[0049] <Applying mechanism SM>

[0050] The application mechanism SM includes a power source SM1 disposed outside the container body 2a, and applies a predetermined bias voltage from the power source SM1 to the workpiece W via the rotary table 3. In other words, in the plasma processing apparatus 1, for the workpiece W, a predetermined plasma processing is performed inside the plasma processing region PA in a state where a bias voltage from the application mechanism SM is applied. Further, the power source SM1 is constituted by, for example, a DC power source, a pulse power source, or an AC power source. In the application mechanism SM, the control unit is configured to change the bias voltage from the power source SM1 according to the content of the plasma processing for the workpiece W and the electron density of the plasma in the plasma processing region PA, etc., so as to appropriately perform the plasma processing.

[0051] Further, the application mechanism SM has: a plurality of the holders H, and the plurality of the holders H are provided at a predetermined interval along the circumference of the table body 3a of the rotary table 3. Each of the plurality of holders H is used to hold the workpiece W on the table body 3a. In the first embodiment, as described above, by the revolution of the table body 3a, a predetermined plasma processing is sequentially performed on the plurality of workpieces W.

[0052] Further, as Figure 3 shown, the holder H includes a support member H1 configured as a cylindrical shape, a support member H2, and an application member H3 configured as a cylindrical shape. The support members H1 and H2 are made of, for example, a dielectric material. The support member H2 and the application member H3 are provided on the table body 3a of the rotary table 3. The support member H1 is rotatably supported by the support member H2, the application member H3, and the table body 3a. The application member H3 is electrically connected to the table body 3a and the workpiece W supported by the support member H1, and applies the bias voltage to the workpiece W supported by the support member H1.

[0053] Further, in the holder H, the support member H1 is configured to contact the cooling plate CM1. Thus, in the first embodiment, the support member H1 contacts the cooling plate CM1 as the table body 3a revolves, whereby the support member H1 (holder H) rotates (self-rotates) in the Figure 2 shown R2 direction. As a result, in the first embodiment, in the plasma processing region PA, the workpiece W rotates together with the holder H, so that the facing surface of the workpiece W with respect to the high-frequency window WR can be changed according to the self-rotation. Therefore, in the first embodiment, it is possible to reliably perform more uniform processing on the workpiece W.

[0054] The plasma processing apparatus 1 of Embodiment 1 configured as described above includes: a vacuum chamber 2 that houses a workpiece W therein; a high-frequency window WR that introduces a high-frequency magnetic field into the interior of the vacuum chamber 2; and an antenna 7 that is disposed opposite to the high-frequency window WR and generates a high-frequency magnetic field. Further, the plasma processing apparatus 1 includes: a rotary table 3 on which the workpiece W is placed and rotated; and an application mechanism SM that applies a predetermined bias voltage to the workpiece W from a power source SM1 via the rotary table 3. The plasma processing apparatus 1 includes a shielding plate 4 that is disposed inside the vacuum chamber 2 above the rotary table 3 and opposite to the high-frequency window WR, shields the space between it and the high-frequency window WR, and is formed with through-holes 4b1 and 4b2 that allow the workpiece W placed on the rotary table 3 to pass through.

[0055] According to the above structure, in Embodiment 1, a plasma processing apparatus 1 that can efficiently process the workpiece W can be configured. Specifically, in Embodiment 1, the interior of the vacuum chamber 2 is partitioned into a plasma processing region PA by the shielding plate 4, so that the electron density of the plasma in the plasma processing region PA can be increased, and the film removal rate (processing rate) for the workpiece W can be increased. Thus, in Embodiment 1, the workpiece W can be efficiently processed. Further, in Embodiment 1, as Figure 1 and Figure 2 shown, a single plasma source having one antenna 7 and one high-frequency window WR can be used to sequentially perform a predetermined plasma process on a plurality of workpieces W. Thus, in Embodiment 1, a low-cost plasma processing apparatus 1 that can also perform plasma processing on a plurality of workpieces W can be configured.

[0056] Hereinafter, with reference to Figures 4 to 7 , the effects of the plasma processing apparatus 1 of Embodiment 1 will be specifically described. Figure 4 is a graph showing an example of the relationship between the electron density of the plasma in the plasma processing apparatus 1 and the sheath thickness. Figure 5 is a diagram illustrating an example of the relationship between the workpiece W and the sheath SA during the film removal process. Figure 6 is an illustration of Figure 1 the shielding plate 4 shown and the plasma processing region PA and the cooling region CA formed thereby in the plasma processing apparatus 1. Figure 7 is a graph showing an example of the relationship between the rotation angle of the rotary table 3 shown in Figure 1 and the electron density of the plasma. Further, in Figure 6 , the illustration of the power source 8, the power source SM1, and the pipe CM2 is omitted.

[0057] As Figure 4As shown, in the plasma processing apparatus 1 of the present Embodiment 1, for example, when the control unit changes the supply power (high-frequency power) supplied to the antenna 7 by controlling the power supply 8, the electron density of the plasma generated in the plasma processing region PA changes as shown in the horizontal axis of Figure 4 . Further, in the plasma processing apparatus 1 of the present Embodiment 1, for example, when the control unit changes the bias voltage by controlling the power supply SM1, the sheath thickness of the sheath SA ( Figure 5 ) generated around the workpiece W in the plasma processing region PA changes according to the electron density of the plasma at each bias voltage. Here, as is well known, the sheath SA is a shielding layer that is generated by the bias voltage so as to surround the workpiece W and hinders the ions of the plasma from approaching the workpiece W.

[0058] Specifically, when the bias voltage is, for example, -100 V, the sheath thickness changes according to the electron density of the plasma as shown by the curve 71 of Figure 4 . Further, when the bias voltage is, for example, -250 V, the sheath thickness changes according to the electron density of the plasma as shown by the curve 72 of Figure 4 . Further, when the bias voltage is, for example, -500 V, the sheath thickness changes according to the electron density of the plasma as shown by the curve 73 of Figure 4 . In other words, as is clear from the curves 71 to 73 of Figure 4 , the greater the electron density of the plasma in the plasma processing region PA and the smaller the absolute value of the bias voltage applied to the workpiece W, the smaller the sheath thickness, and the plasma processing of the workpiece W can be performed with good accuracy.

[0059] Further, as shown by 501 of Figure 5 , when the workpiece W is the drill bit, as shown by 502 and 503 of Figure 5 , in the cross-sectional observation of the workpiece W, the sheath thickness around the workpiece W is different according to the electron density of the plasma. Specifically, when the electron density of the plasma is small, as shown by 502 of Figure 5 , the thickness of the sheath SA becomes large. Therefore, the ions P1 of the plasma are hindered from approaching the surface of the workpiece W by the relatively thick sheath SA. As a result, when the electron density of the plasma is small and the sheath thickness is large, it is difficult to uniformly perform the film removal process on the workpiece W.

[0060] On the other hand, as in the plasma processing apparatus 1 of the present Embodiment 1, when the electron density of the plasma can be increased, as shown by 503 of Figure 5 , the thickness of the sheath SA can be made the same as that of Figure 5is reduced as compared with the thickness shown in 502. Therefore, in the plasma processing apparatus 1 of the present Embodiment 1, the ions P1 of the plasma are hindered from approaching the surface of the workpiece W by the thinner sheath layer SA. In other words, in the plasma processing apparatus 1 of the present Embodiment 1, the ions P1 of the plasma can easily approach the surface of the workpiece W, and a uniform film removal process can be performed.

[0061] As Figure 6 shown, in the plasma processing apparatus 1 of the present Embodiment 1, the inside of the container main body 2a of the vacuum container 2 is divided by the shielding plate 4 into a plasma processing region PA on the plasma source side and a cooling region CA on the side opposite to the plasma source. Specifically, the shielding plate 4 is provided inside the container main body 2a such that the central portion of the shielding plate main body 4a is located, for example, at the center C1 of the rotation axis 3b of the rotary table 3. In addition, as the specified angle θ of the deployment angles of the left and right end portions of the shielding plate main body 4a, an angle of 120°, for example, is set. Moreover, in the plasma processing apparatus 1, a plasma processing region PA can be appropriately formed in which the electron density of the plasma becomes dense by the shielding plate 4; and a cooling region CA in which the diffusion of the plasma is suppressed by substantially shielding the plasma source by the shielding plate 4, thereby temporarily stopping the plasma processing of the workpiece W, and thus suppressing the temperature rise of the workpiece W caused by performing the plasma processing. In addition, in the plasma processing apparatus 1, the specified plasma processing can be performed more efficiently in the plasma processing region PA.

[0062] More specifically, in the plasma processing apparatus 1 of the present Embodiment 1, when generating a plasma having, for example, an electron density of 1E+17 / m 3 as a reference electron density, in the plasma processing region PA, as Figure 7 indicated by the upward arrow in, the electron density of the plasma can be set to a value greater than the reference electron density. As a result, in the plasma processing apparatus 1, in the plasma processing region PA, the plasma processing of the workpiece W can be efficiently performed. In addition, the so-called Figure 7 rotation angle of the horizontal axis is the rotation angle of the rotary table 3 with respect to the center C1, and the case where an arbitrary reference position of the rotary table 3 faces the antenna 7 is set to 0°.

[0063] In addition, in the cooling region CA, as Figure 7As shown by the downward arrow in the figure, the electron density of the plasma can be set to a value less than the reference electron density. As a result, in the cooling region CA, since the execution of the plasma treatment can be suppressed, for the workpiece W, the temperature rise of the workpiece W due to the plasma treatment can be suppressed, and the temperature of the workpiece W can be easily reduced. Further, in the plasma processing apparatus 1, since the workpiece W is cooled by the cooling plate CM1 of the cooling mechanism CM, the temperature rise of the workpiece W can be significantly suppressed. As a result, in the plasma processing apparatus 1, the generation of damage and the like in the workpiece W can be significantly reduced.

[0064] In addition, in the above description, the following case has been described: the shielding plate 4 is arranged inside the container body 2a such that the central portion of the shielding plate body 4a is located at the center C1 of the rotation axis 3b of the rotary table 3. However, the present embodiment is not limited thereto. For example, the structure may be such that the central portion of the shielding plate body 4a is arranged at a position closer to the high-frequency window WR side than the center C1. In this case, it is preferable in terms of making the electron density of the plasma a larger value.

[0065] 〔Embodiment 2〕

[0066] Use Figure 8 to specifically describe Embodiment 2 of the present disclosure. Figure 8 is a top view showing the main part structure of the plasma processing apparatus 1 according to Embodiment 2 of the present disclosure. In addition, for the sake of convenience of explanation, components having the same functions as those described in the above Embodiment 1 are assigned the same reference numerals, and their descriptions are not repeated. Further, in Figure 8 the illustration of the power source 8, the power source SM1, and the pipe CM2 is omitted.

[0067] The main difference between the present Embodiment 2 and the above Embodiment 1 is that a contact member 2c is provided, and the contact member 2c rotates the support member H1 according to the rotation of the rotary table 3.

[0068] As Figure 8 shown, in the plasma processing apparatus 1 of the present Embodiment 2, the contact member 2c is provided on the inner wall surface 2b of the vacuum container 2. The contact member 2c is formed, for example, in a rod shape using a metal material. At one end of the contact member 2c, it is mounted on the inner wall surface 2b so as to protrude from the inner wall surface 2b toward the inside of the container body 2a. Further, at the other end (the protruding end) of the contact member 2c, it is configured to be able to contact the support member H1 of the holder H.

[0069] Further, in the plasma processing apparatus 1 of the second embodiment, when the support member H1 of the rotary holder H of the rotary table 3 contacts the other end of the contact member 2c, the support member H1 is pressed (pushed) by the other end of the contact member 2c according to the rotation. Thus, in the holder H, the support member H1 rotates (self-rotates) in a state of supporting the workpiece W according to the rotation of the rotary table 3.

[0070] According to the above structure, the plasma processing apparatus 1 of the second embodiment exhibits the same effects as those of the first embodiment.

[0071] In addition, in the plasma processing apparatus 1 of the second embodiment, based on the self-rotation due to contact with the cooling plate CM1, the support member H1 of the holder H is caused to self-rotate by contact with the contact member 2c. Therefore, the workpiece W can be processed more reliably and more uniformly. However, for example, in the case where the cooling mechanism CM is omitted, the support member H1 can be caused to self-rotate only by contact with the contact member 2c.

[0072] Furthermore, in the description of the first and second embodiments, a structure in which the support member H1 of the holder H is rotated by contact with the cooling plate CM1 and / or the contact member 2c has been described. However, the present embodiment is not limited thereto. For example, a rotation mechanism such as the following gear may be provided: connected to the holder H and using the rotational force from a drive mechanism that drives the rotation shaft 3b of the rotary table 3 to rotate the support member H1 of the holder H.

[0073] 〔Embodiment 3〕

[0074] Use Figure 9 to specifically describe the third embodiment of the present disclosure. Figure 9 is a diagram showing the main part structure of the plasma processing apparatus 1 of the third embodiment of the present disclosure. In addition, for ease of explanation, components having the same functions as those described in the first embodiment are assigned the same reference numerals, and their descriptions are not repeated. In addition, in Figure 9 the illustration of the cooling mechanism CM is omitted.

[0075] The main difference between the third embodiment and the first embodiment is that a plurality of workpieces W are arranged along the extending direction of the antenna 7.

[0076] As Figure 9As shown, in the plasma processing apparatus 1 of the present Embodiment 3, along the extending direction of the antenna 7, a plurality of, for example, two rows of groups of holders H each arranged in an arc shape are provided. Specifically, the lower group of holders H in the vertical direction is mounted on the table body 3a of the rotary table 3 in the same manner as in Embodiment 1. In addition, the upper group of holders H in the vertical direction is mounted on the table body 3a via a support bar 15 provided at one end on the table body 3a. Further, the support bar 15 rotatably supports a support member H1 that supports the workpiece W.

[0077] In addition, in the plasma processing apparatus 1 of the present Embodiment 3, the interior of the container body 2a is partitioned into a plasma processing region PA and a cooling region CA by a shielding plate 14 having a shielding plate body 14a. As Figure 9 illustrated, through holes 14b1 are provided in the shielding plate 14, and the through holes 14b1 allow the upper group and the lower group of holders H in the vertical direction to pass through. Thus, in the present Embodiment 3, according to the rotation of the rotary table 3, the workpiece W held by each holder H of the upper group and the workpiece W held by each holder H of the lower group can be moved between the plasma processing region PA and the cooling region CA.

[0078] According to the above structure, the plasma processing apparatus 1 of the present Embodiment 3 exhibits the same effects as those of Embodiment 1.

[0079] In addition, in the plasma processing apparatus 1 of the present Embodiment 3, workpieces W supported by groups of two rows of holders H are provided along the extending direction of the antenna 7, so that the number of workpieces W processed per unit time can be easily increased.

[0080] In addition, in the above description, the case where a plurality of workpieces W are provided along the extending direction of the antenna 7 using the support bar 15 has been described. However, the present embodiment is not limited thereto. For example, it may be configured such that two rotary tables facing each other are provided inside the container body 2a, and a plurality of holders H are provided on each rotary table.

[0081] 〔Embodiment 4〕

[0082] Use Figure 10 to specifically describe Embodiment 4 of the present disclosure. Figure 10 is a diagram showing the main part structure of the plasma processing apparatus 1 of Embodiment 4 of the present disclosure. In addition, for ease of explanation, components having the same functions as those described in the above Embodiment 1 are denoted by the same reference numerals, and their descriptions are not repeated.

[0083] The main difference between the fourth embodiment and the first embodiment is that a specified plasma treatment is performed on a relatively large workpiece W0.

[0084] As Figure 10 shown, in the plasma processing apparatus 1 of the fourth embodiment, for example, a cylindrically shaped workpiece W0 is placed on the table body 3a of the rotary table 3. Further, the workpiece W0 is disposed above the rotation axis 3b, which is the rotation center of the rotary table 3. In addition, in the plasma processing apparatus 1 of the fourth embodiment, the inside of the container body 2a is partitioned into a plasma processing region PA and a cooling region CA by a shielding plate 24 having a shielding plate body 24a. As Figure 10 shown, the shielding plate 24 is provided with a through hole 24b through which the workpiece W0 that rotates along with the rotation of the rotary table 3 passes. Thus, in the fourth embodiment, according to the rotation of the rotary table 3, the facing surface of the workpiece W0 with respect to the high-frequency window WR can be changed. As a result, in the fourth embodiment, a part of the workpiece W0 can be sequentially moved to the plasma processing region PA and the cooling region CA.

[0085] According to the above structure, the plasma processing apparatus 1 of the fourth embodiment exhibits the same effects as those of the first embodiment.

[0086] 〔Summary〕

[0087] To solve the above problems, a plasma processing apparatus according to a first aspect of the present disclosure includes: a vacuum container that houses an object to be processed therein; a high-frequency window that introduces a high-frequency magnetic field that generates plasma inside the vacuum container into the inside of the vacuum container; an antenna that is provided to face the high-frequency window outside the vacuum container and generates the high-frequency magnetic field; a rotary table on which the object to be processed is placed and that rotates inside the vacuum container; and a shielding plate that is provided inside the vacuum container above the rotary table so as to face the high-frequency window, shields plasma, divides the inside of the vacuum container into a plasma processing region and a cooling region, and is formed with a through hole that allows the object to be processed placed on the rotary table to pass through.

[0088] According to the above structure, a plasma processing apparatus that can efficiently process an object to be processed can be provided.

[0089] According to a second aspect of the present disclosure, in the plasma processing apparatus according to the first aspect, it is possible that, when viewed from the upper surface of the vacuum container, the shielding plate is provided inside the vacuum container in a manner that is symmetric with respect to its central portion in the left-right direction and that the left and right end portions are spread at a specified angle with respect to the central portion as the center.

[0090] According to the said structure, a plasma processing region can be appropriately formed inside the vacuum container by the shielding plate, and plasma processing can be carried out more efficiently.

[0091] The third aspect of the present disclosure is based on the plasma processing apparatus of the first aspect or the second aspect, wherein the potential of the shielding plate can be floating.

[0092] According to the said structure, the disappearance of plasma can be suppressed, and the plasma density can be maintained higher.

[0093] The fourth aspect of the present disclosure is based on the plasma processing apparatus of any one of the first aspect to the third aspect, and may further include an application mechanism. The application mechanism includes a power supply provided outside the vacuum container, and applies a prescribed bias voltage from the power supply to the object to be processed via the rotary table. The application mechanism has a holder provided on the rotary table to hold the object to be processed. The holder includes: a support member provided on the rotary table and supporting the object to be processed so as to be rotatable; and an application member electrically connected to the rotary table and the object to be processed supported by the support member, and applying the bias voltage to the object to be processed supported by the support member.

[0094] According to the said structure, more uniform processing can be reliably performed on the object to be processed.

[0095] The fifth aspect of the present disclosure is based on the plasma processing apparatus of the fourth aspect, wherein a contact member can be provided inside the vacuum container. The contact member contacts the support member of the holder, and rotates the support member according to the rotation of the rotary table.

[0096] According to the said structure, more uniform processing can be more reliably performed on the object to be processed.

[0097] In the sixth aspect of the present disclosure, in the plasma processing apparatus of any one of the fourth aspect or the fifth aspect, a cooling mechanism can be provided inside the vacuum container. The cooling mechanism includes a cooling plate disposed in a region of the shielding plate opposite to the antenna side, and cools the object to be processed using the cooling plate.

[0098] According to the said structure, the object to be processed can be cooled at a higher speed, and thus the processing rate can be further increased.

[0099] The seventh aspect of the present disclosure is based on the plasma processing apparatus of the sixth aspect, wherein the cooling plate can contact the holder.

[0100] According to the said structure, cooling can be reliably performed without damaging the object to be processed.

[0101] The eighth aspect of the present disclosure is a plasma processing apparatus according to any one of the first to seventh aspects, wherein a plurality of workpieces to be processed are provided inside the vacuum chamber along the extending direction of the antenna.

[0102] According to the above structure, the number of workpieces to be processed per unit time can be easily increased.

[0103] The present disclosure is not limited to the above-described embodiments, and various modifications can be made within the scope defined by the claims. Embodiments obtained by appropriately combining technical means disclosed in different embodiments are also included in the technical scope of the present disclosure.

[0104] Explanation of reference numerals

[0105] 1: Plasma processing apparatus

[0106] 2: Vacuum chamber

[0107] 2c: Contact member

[0108] 3: Rotary table

[0109] 3b: Rotation shaft

[0110] 4, 14, 24: Shielding plate

[0111] 4b1, 4b2, 14b1, 24b: Through hole

[0112] 5: Metal plate (high-frequency window)

[0113] 6: Dielectric plate (high-frequency window)

[0114] 7: Antenna

[0115] W, W0: Workpiece (workpiece to be processed)

[0116] SM: Application mechanism

[0117] SM1: Power supply

[0118] H: Holder

[0119] H1, H2: Support member

[0120] H3: Application member

[0121] CM: Cooling mechanism

[0122] CM1: Cooling plate

[0123] WR: High-frequency window

[0124] PA: Plasma processing area

[0125] CA: Cooling Area

Claims

1. A plasma processing apparatus, comprising: a vacuum chamber that houses an object to be processed therein; a high-frequency window that introduces a high-frequency magnetic field, which generates plasma inside the vacuum chamber, into the vacuum chamber; an antenna disposed to face the high-frequency window outside the vacuum chamber and generating the high-frequency magnetic field; a rotary table on which the object to be processed is placed and rotates inside the vacuum chamber; and a shielding plate disposed inside the vacuum chamber above the rotary table and facing the high-frequency window, shielding plasma, dividing the interior of the vacuum chamber into a plasma processing region and a cooling region, and formed with a through-hole allowing the object to be processed placed on the rotary table to pass through.

2. The plasma processing apparatus according to claim 1, wherein, When viewed from the upper surface of the vacuum chamber, the shielding plate is disposed inside the vacuum chamber in a manner that is symmetric about its central portion in the left-right direction and the respective left and right end portions are unfolded by a predetermined angle with the central portion as the center.

3. The plasma processing apparatus according to claim 1, wherein, The potential of the shielding plate is floating.

4. The plasma processing apparatus according to claim 1, further comprising an application mechanism, the application mechanism including a power supply disposed outside the vacuum chamber and applying a predetermined bias voltage from the power supply to the object to be processed via the rotary table, the application mechanism having: a holder disposed on the rotary table to hold the object to be processed, the holder including: a support member disposed on the rotary table and supporting the object to be processed rotatably; and an application member electrically connected to the rotary table and the object to be processed supported by the support member, and applying the bias voltage to the object to be processed supported by the support member.

5. The plasma processing apparatus according to claim 4, wherein A contact member is disposed inside the vacuum chamber and contacts the support member of the holder, and rotates the support member according to the rotation of the rotary table.

6. The plasma processing apparatus according to claim 4, wherein, A cooling mechanism is disposed inside the vacuum chamber, the cooling mechanism including a cooling plate disposed in a region of the shielding plate opposite to the antenna side, and cooling the object to be processed using the cooling plate.

7. The plasma processing apparatus according to claim 6, wherein, The cooling plate contacts the holder.

8. The plasma processing apparatus according to any one of claims 1 to 7, wherein, Inside the vacuum chamber, a plurality of the objects to be processed are disposed along the extending direction of the antenna.

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