Semiconductor Moire superlattice material and preparation method thereof

Abstract

The invention relates to the technical field of semiconductor nanomaterials, and particularly discloses a semiconductor Moire superlattice material and a preparation method thereof.The Moire superlattice structure of ZnIn2S4 is successfully prepared for the first time through a solvothermal method, and the formation mechanism of the Moire superlattice structure is clarified; with zinc acetate and indium chloride as precursors and thioacetamide as a solvent, synthesizing a ZnIn2S4 Moire superlattice structure in one step by controlling reaction conditions; the rotation angle of the prepared Moire superlattice is about 12 degrees and integral multiples of 12 degrees, and the controllability and reproducibility of the preparation method are good; the photoelectric property of ZnIn2S4 is expected to be further improved, and the application potential of ZnIn2S4 in the fields of photocatalysis, photoelectric detection, water photovoltaic power generation, photovoltaic power generation and the like is developed.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor nanomaterials, and more specifically, to ZnIn2S4 moiré superlattice materials and a general preparation method thereof. Background Art

[0002] In recent years, with the rapid development of "twistronics", it has inspired the exploration of the superior properties of twisted two-dimensional layered materials. The vertical stacking of two-dimensional materials with angular deviation or lattice mismatch can generate in-plane periodic structures, called moiré superlattices. The periodic moiré superlattices can optimize the energy band structure, thus generating many phenomena, including moiré phonons, moiré excitons, magnetism, topological edge states, unconventional superconductivity, and Mott insulating properties, etc. Moiré superlattice materials have broad application prospects in the fields of electronics, optoelectronics, valleytronics, photonics, spintronics, and electrocatalysis.

[0003] Some typical two-dimensional moiré superlattice materials have been widely reported, such as graphene, transition metal dichalcogenides, hexagonal boron nitride, graphitic carbon nitride, and bismuth oxychloride, etc. However, most two-dimensional moiré superlattice materials of two-dimensional materials have not been discovered yet. Zinc indium sulfide (ZnIn2S4) is a two-dimensional semiconductor material with a layered structure and a narrow band gap, which has visible light response near 570 nm, and has low toxicity, stable chemical properties, and rich sources, and has been widely reported in the fields of photocatalysis, photoelectric detection, etc. However, the insufficient separation efficiency of its intrinsic carriers restricts the breakthrough improvement of photoelectric performance. It is expected to further improve the photoelectric performance of ZnIn2S4 by constructing a moiré superlattice structure. Unfortunately, the ZnIn2S4 moiré superlattice structure has not been discovered yet. Therefore, it is urgent to explore the synthesis method of ZnIn2S4 moiré superlattice materials, so as to break through and improve its photoelectric performance and further explore its application potential in the optoelectronic field.

[0004] Currently, the synthesis methods of moiré superlattice materials mainly rely on mechanical exfoliation method and epitaxial growth technology. The stacking method of the moiré superlattice materials prepared by the mechanical exfoliation method is uncontrollable, the uniformity and size of the samples are limited, and there is a risk of interface contamination. Although the epitaxial growth technology can better solve these problems, its high preparation cost limits the large-scale preparation of moiré superlattice materials. The present invention discloses a simple, homogeneous and reproducible solvothermal method, and successfully synthesizes ZnIn2S4 moiré superlattice materials. Summary of the Invention

[0005] To solve the problems raised in the above-mentioned background art, the present invention provides a method for preparing a ZnIn2S4 moiré superlattice material (ZnIn2S4-MSL) by a low-temperature and convenient solvothermal synthesis method, clarifies the formation mechanism of the ZnIn2S4 moiré superlattice material, and fills the gap of the ZnIn2S4 moiré superlattice material. The ZnIn2S4 moiré superlattice material synthesized by this method has a regular moiré rotation angle, good uniformity and reproducibility, and has application potential in the fields of photocatalysis, photoelectric detection, hydrovoltaic power generation, photovoltaic power generation, etc.

[0006] To achieve the above object, the present invention provides the following technical solutions:

[0007] The present invention provides a method for preparing a semiconductor moiré superlattice material, comprising the following steps:

[0008] Step 1: Synthesize bulk ZnIn2S4 by a low-temperature reflux method;

[0009] Step 2: Redisperse the bulk ZnIn2S4 in deionized water, and ultrasonically treat it with an ultrasonic disperser for 3 - 4 h to obtain a monolayer ZnIn2S4 nanosheet dispersion;

[0010] Step 3: The specific steps for obtaining the ZnIn2S4 moiré superlattice material by an orientation freezing technique are as follows: Pour the dispersion into a petri dish and place it in a refrigerator at -20°C for pre-freezing for 3 h, and then freeze-dry it for 36 - 48 h to obtain an orange-yellow powder of the ZnIn2S4 moiré superlattice material.

[0011] Further, in Step 1, the specific steps for synthesizing bulk ZnIn2S4 by a low-temperature reflux method are as follows:

[0012] Step 1-1: Add deionized water to Zn(CH3COO)2·2H2O and InCl3·4H2O, and stir to dissolve; then, add thioacetamide (TAA) and stir until completely dissolved;

[0013] Step 1-2: Slowly heat the solution obtained in Step 1-1 by an oil bath, continuously react, continuously stir magnetically during the reaction, and use a straight condenser for condensation reflux until the solution turns orange-yellow, stop heating, and wait for the solution to cool to room temperature in a three-necked flask;

[0014] Step 1-3: After cooling, wash the solution with deionized water 3 - 5 times, pour out the supernatant after the product has settled, and then separate the product by suction filtration. The obtained product is bulk ZnIn2S4.

[0015] Further, in Step 2, the molar ratio of bulk ZnIn2S4 to deionized water is 1:2000 - 1:3000.

[0016] Further, in Step 2, the ultrasonic power of the ultrasonic disperser is 500 - 700 W. After the ultrasonic treatment, a monolayer ZnIn2S4 nanosheet dispersion with an obvious Tyndall effect is obtained.

[0017] Further, in Step 3, the temperature range for freeze-drying is -60 to -50 °C.

[0018] Further, in Step 3, the formation mechanism of the ZnIn2S4 moiré superlattice material obtained by the oriented freezing technique is as follows: In the ultrasonic step, the monolayer ZnIn2S4 nanosheets generate random rotation angles, and then during freeze-drying, due to the combined action of the decrease in degrees of freedom and spontaneous curvature, they rotate by the minimum angle to reach the lowest energy state nearby.

[0019] Further, in Step 1-1, the molar ratio of Zn(CH3COO)2·2H2O, InCl3·4H2O, and thioacetamide is 3:6:16, and the molar ratio of Zn(CH3COO)2·2H2O to deionized water is 3:400 - 600 mmol / mL.

[0020] Further, in Step 1-2, the reaction temperature is 90 - 105 °C. The two side openings of the three-necked flask are sealed with rubber stoppers, and the middle opening is connected to a spherical condenser for reflux condensation.

[0021] Further, in Step 1-3, the obtained bulk ZnIn2S4 is composed of 3 - 6 layers of stacked monolayer ZnIn2S4 nanosheets.

[0022] The present invention also provides a semiconductor moiré superlattice material prepared by the preparation method described above.

[0023] Further, the prepared semiconductor moiré superlattice material has an obvious spontaneous curvature, and the lateral size is about 400 - 600 nm.

[0024] Further, the prepared semiconductor moiré superlattice material has bilayer moiré superlattices with specific rotation angles of 12° (±2°) and 24° (±2°), and trilayer moiré superlattices with a rotation angle of 12° (±2°) between each adjacent two layers, and the moiré superlattice material has good uniformity.

[0025] The present invention also provides the application of the semiconductor moiré superlattice material described above in photocatalytic materials, photoelectric detection, water voltaic power generation, or photovoltaic power generation materials.

[0026] Compared with the prior art, the beneficial effects of the present invention are:

[0027] The preparation method of the present invention is simple to operate and has good reproducibility, and the ZnIn2S4 moiré superlattice material is successfully synthesized. Compared with the traditional mechanical exfoliation method and epitaxial growth technology, the present invention effectively solves the problems of limited stacking methods, easy interface contamination, and high preparation costs, and has good industrial application potential. Description of the Drawings

[0028] Figure 1 It is the preparation flow chart of the moiré superlattice in Example 1;

[0029] Figure 2 It is the field emission scanning electron microscope (FESEM) image of the bulk ZnIn2S4 sample prepared in Example 1;

[0030] Figure 3 It is the theoretical thickness of the multi-layer ZnIn2S4 material; a-f are the theoretical thicknesses of the multi-layer bulk ZnIn2S4 materials stacked by single-layer, double-layer, triple-layer, quadruple-layer, quintuple-layer, and sextuple-layer nanosheets respectively;

[0031] Figure 4 It is the statistical law of the number of layers of the bulk ZnIn2S4 sample prepared in Example 1;

[0032] Figure 5 It is the TEM image and the corresponding Fourier transform (FFT) image of the single-layer ZnIn2S4 sample prepared in Example 1;

[0033] Figure 6 It is the TEM image of the ZnIn2S4-MSL sample;

[0034] Figure 7 It is the series of characterizations of the bilayer moiré superlattice region with a rotation angle of about 12° in the ZnIn2S4-MSL sample prepared in Example 1; a, the HRTEM image of the ZnIn2S4-MSL material with a rotation angle of about 12°; b, the model diagram of the ZnIn2S4-MSL material with a rotation angle of about 12°; c, the FFT image corresponding to Figure a; d, e, the inverse Fourier transform (IFFT) images corresponding to the FFT image in Figure c; f, the filtered FFT image corresponding to Figure c; g, h, the e xy Directional stress distribution image;

[0035] Figure 8Series characterization of the bilayer Moiré superlattice region with a rotation angle of approximately 24° in the ZnIn2S4-MSL sample prepared in Example 1; a, HRTEM image of the ZnIn2S4-MSL material with a rotation angle of approximately 24°; b, model diagram of the ZnIn2S4-MSL material with a rotation angle of approximately 24°; c, FFT image corresponding to Figure a; d, e, inverse Fourier transform (IFFT) images corresponding to the FFT image in Figure c; f, filtered FFT image corresponding to Figure c; g, h, e xy Directional stress distribution image;

[0036] Figure 9 Series characterization of the trilayer Moiré superlattice region with a rotation angle of approximately 12° between adjacent layers in the ZnIn2S4-MSL sample prepared in Example 1; a, HRTEM image of the ZnIn2S4-MSL material with a rotation angle of approximately 12° between adjacent layers; b, FFT image corresponding to Figure a; c, filtered FFT image corresponding to Figure b; d, model diagram of the ZnIn2S4-MSL material with a rotation angle of approximately 12° between adjacent layers; e-g, FFT and IFFT images corresponding to the lattice points in Figure b;

[0037] Figure 10 HRTEM images of 12 randomly selected regions in the ZnIn2S4-MSL sample prepared in Example 1. Detailed implementation manners

[0038] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0039] Example 1

[0040] Raw materials: zinc acetate dihydrate (Zn(CH3COO)2·2H2O), indium(III) chloride tetrahydrate (InCl3·4H2O), deionized water, thioacetamide (TAA).

[0041] Step 1, the specific steps for synthesizing bulk ZnIn2S4 by the low-temperature reflux method are as follows:

[0042] Step 1-1: Add 3 mmol of Zn(CH3COO)2·2H2O and 6 mmol of InCl3·4H2O into a three-necked flask, and then add 500 mL of deionized water. Stir magnetically at a constant temperature until the drugs are completely dissolved. Subsequently, continue to add 16 mmol of thioacetamide (TAA), and stir magnetically at a constant temperature until the drugs are completely dissolved.

[0043] Step 1-2: Slowly heat the solution to 94 - 96 °C by oil bath heating. Stir magnetically continuously at this temperature, and use a straight condenser for condensation reflux until the solution turns orange-yellow. Then stop heating and wait for the solution to cool to room temperature in the three-necked flask.

[0044] Step 1-3: After cooling, pour the solution into a beaker, wash it 3 - 5 times with deionized water. Wait for the product to settle and then pour out the supernatant. Subsequently, separate the product by suction filtration. The obtained product is bulk ZnIn2S4.

[0045] Step 2: Redisperse the bulk ZnIn2S4 in deionized water at a molar ratio of 1:2000, and ultrasonically treat it for 3 h at 550 W to obtain a monolayer ZnIn2S4 nanosheet dispersion with an obvious Tyndall effect.

[0046] Step 3: Pour the dispersion into a petri dish and place it in a -20 °C refrigerator for pre-freezing for 3 h. Subsequently, freeze-dry it at -60 °C for 48 h. The obtained orange-yellow powder is the ZnIn2S4 moiré superlattice material.

[0047] The attached figure shows the series of characterization results of the ZnIn2S4-MSL sample obtained in Example 1, the bulk ZnIn2S4 sample, and the monolayer ZnIn2S4 sample obtained during the process, and elaborates on the formation mechanism of the ZnIn2S4 moiré superlattice structure. To prove that the technical solution of the present invention can be implemented, the present invention will be further described below in conjunction with the attached figure.

[0048] Figure 1 It is a flow chart for preparing the ZnIn2S4 moiré superlattice (ZnIn2S4-MSL) material. During the preparation process, a bulk ZnIn2S4 sample, a monolayer ZnIn2S4 sample, and a ZnIn2S4-MSL sample are obtained in sequence. First, the bulk ZnIn2S4 sample is obtained through Step 3 in Example 1. Figure 2 It is the SEM image of the bulk ZnIn2S4 sample, which proves that the bulk ZnIn2S4 is stacked by ZnIn2S4 nanosheets. Figure 3 It is the theoretical thickness of ZnIn2S4 with different numbers of layers, from which the theoretical stacking number of the bulk ZnIn2S4 can be calculated. According to Figure 3 the provided theoretical thickness, Figure 4Statistical analysis of the number of layers of bulk ZnIn2S4 samples found that the stacking number of bulk ZnIn2S4 was 3 - 6 layers. Figure 5 The TEM image of monolayer ZnIn2S4 sample in [reference] proved that ultrasonic treatment successfully dispersed bulk ZnIn2S4 into monolayers.

[0049] The ZnIn2S4-MSL sample was obtained by implementing step 3 in Case 1. Figure 6 The TEM image of the ZnIn2S4-MSL sample shows that the size of the ZnIn2S4-MSL sample is 400 - 600 nm. Figure 7 The series of characterizations of the bilayer Moiré superlattice region with a rotation angle of about 12° in the prepared ZnIn2S4-MSL sample. Figure 7 a is the HRTEM image of this bilayer Moiré superlattice region, and the honeycomb Moiré pattern can be clearly observed. Figure 7 b is the atomic structure model of ZnIn2S4 with a 12° rotation angle introduced, and the resulting Moiré pattern is highly consistent with the HRTEM image. Figure 7 c is the FFT image corresponding to the HRTEM image of the bilayer Moiré superlattice region, which contains 12 {102} points, forming two hexagons (two sets of six-fold symmetric diffraction points). Figure 7 d and e are the images obtained by performing IFFT transformation on the two hexagons numbered 1 and 2 respectively. It can be seen that there is an obvious angle between the lattice fringes of the two sets of spots. Figure 7 f is the rotation angle measured based on the two sets of separated spots in the FFT image, which is 12.15°. Figure 7 g and h are Figure 7 the geometric phase analysis results of c and d respectively, and it can be seen that there is an obvious stress distribution in the xy direction of this bilayer Moiré superlattice region. Figure 8 The series of characterizations of the bilayer Moiré superlattice region with a rotation angle of about 24° in the prepared ZnIn2S4-MSL sample, and the results are Figure 7 similar, indicating that bilayer ZnIn2S4-MSL samples with a rotation angle of about 24° can also be synthesized by this method. Figure 9 The series of characterizations of the trilayer Moiré superlattice region with a rotation angle of about 12° between adjacent layers in the prepared ZnIn2S4-MSL sample. It shows that trilayer ZnIn2S4-MSL samples with a rotation angle of about 12° between adjacent two layers can also be synthesized by this method. Figure 10 The HRTEM images of 12 randomly selected regions in the prepared ZnIn2S4-MSL sample show that the rotation angles of the Moiré superlattice in the prepared ZnIn2S4-MSL samples are all about 12° or 24°, with good uniformity and reproducibility.

[0050] Formation mechanism of the Moiré superlattice in the ZnIn2S4-MSL sample: During the pre-freezing process, due to the concentration effect and the interfacial effect, ZnIn2S4 nanoparticles gradually assemble and agglomerate to form a macroscopic self-assembled body, which is uniformly distributed in the ice. Due to the action of stress and torque during the phase transition from the aqueous phase to the ice phase, an angle is generated between the single-layer ZnIn2S4 nanosheets, and the degree of freedom in the ice is low, making it difficult to transform into a perfectly stacked bilayer morphology. It can only reach the lowest energy state in the form of a certain twist angle to achieve stability. This angle persists during freeze-drying, so the ZnIn2S4 Moiré superlattice material is formed.

[0051] Example 2

[0052] Raw materials: Zinc acetate dihydrate (Zn(CH3COO)2·2H2O), Indium(III) chloride tetrahydrate (InCl3·4H2O), Deionized water, Thioacetamide (TAA).

[0053] Step 1, the specific steps for synthesizing bulk ZnIn2S4 by low-temperature reflux method are as follows:

[0054] Step 1-1, add 3 mmol of Zn(CH3COO)2·2H2O and 6 mmol of InCl3·4H2O to a three-necked flask, and add 500 mL of deionized water. Stir magnetically at a constant temperature until the drugs are completely dissolved; then, continue to add 16 mmol of thioacetamide (TAA), and stir magnetically at a constant temperature until the drugs are completely dissolved.

[0055] Step 1-2, slowly heat the solution to 94 - 96 °C by oil bath heating. Continuously stir magnetically at this temperature, and use a straight condenser for condensation reflux until the solution turns orange-yellow. Stop heating and wait for the solution to cool to room temperature in the three-necked flask.

[0056] Step 1-3, after cooling, pour the solution into a beaker, wash it 3 - 5 times with deionized water. Wait for the product to settle and then pour out the supernatant. Subsequently, separate the product by suction filtration. The obtained product is bulk ZnIn2S4.

[0057] Step 2: Redisperse the bulk ZnIn2S4 in deionized water at a molar ratio of 1:3000, and ultrasonically treat it for 3 h at 550 W to obtain a dispersion of single-layer ZnIn2S4 nanosheets with an obvious Tyndall effect.

[0058] Step 3: Pour the dispersion into a petri dish and place it in a -20 °C refrigerator for pre-freezing for 3 h, and then freeze-dry it at -60 °C for 48 h. The obtained orange-yellow powder is the ZnIn2S4 Moiré superlattice material.

[0059] The ZnIn2S4 Moiré superlattice material obtained in Example 2 has the same result as that in Example 1.

[0060] Example 3

[0061] Raw materials: zinc acetate dihydrate (Zn(CH3COO)2·2H2O), indium(III) chloride tetrahydrate (InCl3·4H2O), deionized water, thioacetamide (TAA).

[0062] Step 1, the specific steps for synthesizing bulk ZnIn2S4 by low-temperature reflux method are as follows:

[0063] Step 1-1, add 3 mmol of Zn(CH3COO)2·2H2O and 6 mmol of InCl3·4H2O into a three-necked flask, and add 500 mL of deionized water. Stir magnetically at a constant temperature until the drugs are completely dissolved; then, continue to add 16 mmol of thioacetamide (TAA), and stir magnetically at a constant temperature until the drugs are completely dissolved.

[0064] Step 1-2, slowly heat the solution to 94 - 96 °C by oil bath heating, continuously stir magnetically at this temperature, and use a straight condenser for condensation reflux until the solution turns orange-yellow, then stop heating and wait for the solution to cool to room temperature in the three-necked flask.

[0065] Step 1-3, after cooling, pour the solution into a beaker, wash it 3 - 5 times with deionized water. After the product settles, pour out the supernatant, and then separate the product by suction filtration. The obtained product is bulk ZnIn2S4.

[0066] Step 2: Redisperse the bulk ZnIn2S4 in deionized water at a molar ratio of 1:2000, and ultrasonically treat it for 3 h at 650 W to obtain a monolayer ZnIn2S4 nanosheet dispersion with an obvious Tyndall effect.

[0067] Step 3: Pour the dispersion into a petri dish and pre-freeze it in a -20 °C refrigerator for 3 h, and then freeze-dry it at -60 °C for 48 h. The obtained orange-yellow powder is the ZnIn2S4 moiré superlattice material. The ZnIn2S4 moiré superlattice material obtained in Example 3 has the same result as that in Example 1.

[0068] Example 4

[0069] Raw materials: zinc acetate dihydrate (Zn(CH3COO)2·2H2O), indium(III) chloride tetrahydrate (InCl3·4H2O), deionized water, thioacetamide (TAA).

[0070] Step 1, the specific steps for synthesizing bulk ZnIn2S4 by low-temperature reflux method are as follows:

[0071] Step 1-1: Add 3 mmol of Zn(CH3COO)2·2H2O and 6 mmol of InCl3·4H2O into a three-necked flask, and then add 500 mL of deionized water. Stir magnetically at a constant temperature until the drugs are completely dissolved. Subsequently, continue to add 16 mmol of thioacetamide (TAA), and stir magnetically at a constant temperature until the drugs are completely dissolved.

[0072] Step 1-2: Slowly heat the solution to 98 - 102 °C by oil bath heating. Continuously stir magnetically at this temperature, and use a straight condenser for condensation reflux until the solution turns orange-yellow. Then stop heating and wait for the solution to cool to room temperature in the three-necked flask.

[0073] Step 1-3: After cooling, pour the solution into a beaker, wash it 3 - 5 times with deionized water. Wait for the product to settle and then pour out the supernatant. Subsequently, separate the product by suction filtration. The obtained product is blocky ZnIn2S4.

[0074] Step 2: Redisperse the blocky ZnIn2S4 in deionized water at a molar ratio of 1:2000, and ultrasonically treat it for 3 h at 550 W to obtain a monolayer ZnIn2S4 nanosheet dispersion with an obvious Tyndall effect.

[0075] Step 3: Pour the dispersion into a petri dish and place it in a -20 °C refrigerator for pre-freezing for 3 h. Subsequently, freeze-dry it at -60 °C for 48 h. The obtained orange-yellow powder is the ZnIn2S4 moiré superlattice material.

[0076] The ZnIn2S4 moiré superlattice material obtained in Example 4 has the same result as that in Example 1.

[0077] The attached drawings prove that the ZnIn2S4 moiré superlattice material is successfully synthesized by this method. Moreover, the preparation method of the present invention is simple in operation, has good reproducibility, effectively solves the problems of limited stacking methods, easy interface pollution and high preparation costs in traditional technologies, and has good industrial application potential. And the ZnIn2S4 moiré superlattice material synthesized by this method has a regular moiré rotation angle and has good application potential in the fields of photocatalysis, photoelectric detection, water voltaic power generation materials, etc.

[0078] It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements not only includes those elements, but also includes other elements not expressly listed, or further includes elements inherent to such process, method, article or device.

[0079] It should be noted that the above content only illustrates the technical idea of the present invention, and the protection scope of the present invention cannot be limited thereby. For those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and refinements can still be made, and these improvements and refinements all fall within the protection scope of the claims of the present invention.

Claims

1. A preparation method of a semiconductor Moiré superlattice material, characterized in that, It includes the following steps: Step 1: Synthesize bulk ZnIn2S4 by the low-temperature reflux method; Step 2: Redisperse the bulk ZnIn2S4 in deionized water and ultrasonically treat it with an ultrasonic disperser for 3 - 4 h to obtain a monolayer ZnIn2S4 nanosheet dispersion; Step 3: Pour the dispersion into a petri dish and pre-freeze it in a refrigerator at -20 °C for 3 h, and then freeze-dry it for 36 - 48 h to obtain an orange powder of ZnIn2S4 moiré superlattice material.

2. The preparation method of a semiconductor moiré superlattice material according to claim 1, wherein in Step 1, the specific steps for synthesizing bulk ZnIn2S4 by the low-temperature reflux method are: Step 1-1: Add deionized water to Zn(CH3COO)2·2H2O and InCl3·4H2O, stir to dissolve; then, add thioacetamide and stir until completely dissolved; Step 1-2: Slowly heat the solution obtained in Step 1-1 to 90 - 105 °C by an oil bath and continuously react; during the reaction, continuously stir magnetically and use a straight condenser for condensation reflux until the solution turns orange-yellow, stop heating, and wait for the solution to cool to room temperature in a three-necked flask; Step 1-3: After cooling, wash the solution with deionized water 3 - 5 times, pour out the supernatant after the product has settled, and then separate the product by suction filtration. The obtained product is bulk ZnIn2S4.

3. The preparation method of a semiconductor Moiré superlattice material according to claim 1, characterized in that, In Step 2, the molar ratio of bulk ZnIn2S4 to deionized water is 1:2000 - 1:3000.

4. The preparation method of a semiconductor Moiré superlattice material according to claim 1, characterized in that In Step 2, the ultrasonic power of the ultrasonic disperser is 500 - 700 W.

5. The preparation method of a semiconductor Moiré superlattice material according to claim 1, characterized in that, In Step 3, the temperature range of freeze-drying is -60 - -50 °C.

6. The preparation method of a semiconductor Moiré superlattice material according to claim 1, characterized in that, In Step 1-1, the molar ratio of Zn(CH3COO)2·2H2O, InCl3·4H2O, and thioacetamide is 3:6:16, and the molar ratio of Zn(CH3COO)2·2H2O to deionized water is 3:400 - 600 mmol / mL.

7. A semiconductor moiré superlattice material prepared by the preparation method according to any one of claims 1 - 5.

8. A semiconductor Moiré superlattice material according to claim 6, characterized in that, The prepared semiconductor moiré superlattice material has an obvious spontaneous curvature, and the lateral size is about 400 - 600 nm.

9. A semiconductor Moiré superlattice material according to claim 6, wherein The prepared semiconductor moiré superlattice material has a bilayer moiré superlattice with specific rotation angles of 12° (±2°) and 24° (±2°), and a trilayer moiré superlattice with a rotation angle of 12° (±2°) between every two adjacent layers.

10. An application of the semiconductor moiré superlattice material according to claim 7 in photocatalytic materials, photoelectric detection, water voltaic power generation, or photovoltaic power generation materials.

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