Film forming apparatus and method for manufacturing member having silicon-containing film

Abstract

The invention provides a film forming apparatus and a method of manufacturing a member having a silicon-containing film. A film is formed while suppressing oxidation. The exhaust section depressurizes the inside of the chamber to a predetermined degree of vacuum. The holding unit is disposed in the chamber and holds a film-forming target member. The supply unit supplies a film-forming material containing silicon to the surface of a film-forming target member. The heat source is capable of heating at a predetermined degree of vacuum to melt the supplied film-forming material.

Description

[0001] This application is a divisional application of the application with the filing date of August 18, 2021, application number 202110949168.7, and invention title "Film-forming apparatus and manufacturing method of member having silicon-containing film". Technical Field

[0002] The present disclosure relates to a film-forming apparatus and a manufacturing method of a member having a silicon-containing film. Background Art

[0003] Patent Document 1 discloses a method of manufacturing a silicon film by spraying a slurry containing silicon particles using a high-velocity flame spraying method.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2018-48378 Summary of the Invention

[0007] Problems to be Solved by the Invention

[0008] The present disclosure provides a technique for forming a film while suppressing oxidation.

[0009] Solutions to the Problems

[0010] A film-forming apparatus according to one aspect of the present disclosure includes a chamber, an exhaust unit, a holding unit, a supply unit, and a heat source. The exhaust unit reduces the pressure in the chamber to a predetermined vacuum degree. The holding unit is disposed in the chamber and holds a film-forming target member. The supply unit supplies a film-forming material containing silicon to the surface of the film-forming target member. The heat source can be heated in a predetermined vacuum degree and melts the supplied film-forming material.

[0011] Effects of the Invention

[0012] According to the present disclosure, it is possible to form a film while suppressing oxidation. Description of the Drawings

[0013] Figure 1 It is a diagram showing an example of the schematic structure of the film-forming apparatus according to the first embodiment.

[0014] Figure 2 It is a diagram for explaining an outline of film formation of the film-forming apparatus according to the first embodiment.

[0015] Figure 3 It is a diagram showing an example of the film formation result of the silicon film according to the embodiment.

[0016] Figure 4 It is a diagram showing an example of the schematic structure of the film-forming apparatus according to the second embodiment.

[0017] Figure 5 This is a diagram showing an overview of film formation by the film forming apparatus according to the second embodiment.

[0018] Figure 6 This is a diagram showing an example of the schematic structure of the film forming apparatus according to the third embodiment.

[0019] Figure 7 This is a diagram showing an overview of film formation by the film forming apparatus according to the third embodiment.

[0020] Figure 8 This is a diagram showing an example of the schematic structure of the film forming apparatus according to the fourth embodiment.

[0021] Figure 9 This is a diagram showing an overview of film formation by the film forming apparatus according to the fourth embodiment.

[0022] Figure 10 This is a diagram showing another example of the schematic structure of the film forming apparatus according to the first embodiment.

[0023] Figure 11 This is a diagram showing another example of the schematic structure of the film forming apparatus according to the second embodiment.

[0024] Figure 12 This is a diagram showing another example of the schematic structure of the film forming apparatus according to the third embodiment.

[0025] Figure 13 This is a diagram showing another example of the schematic structure of the film forming apparatus according to the fourth embodiment. Detailed Embodiments

[0026] Hereinafter, embodiments of the film forming apparatus and the method for manufacturing a component having a silicon-containing film disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, the disclosed film forming apparatus and the method for manufacturing a component having a silicon-containing film are not limited to the present embodiment.

[0027] In addition, silicon (Si) is used as a material for coating the surface of components in a chamber in a semiconductor manufacturing apparatus. When the silicon film is formed in a non-vacuum state, during the film formation process, the surface of the silicon particles is oxidized, and an oxidized portion with a weak adhesion force is formed in the silicon film. Due to this oxidized portion, the silicon particles are easily peeled off from the silicon film, and the peeled silicon particles become fine particles, resulting in contamination, which may cause damage to the functions of the manufactured semiconductor.

[0028] Therefore, a new technology for suppressing oxidation during film formation is expected.

[0029] [First Embodiment]

[0030] [Device Structure]

[0031] The first embodiment will be described.Figure 1 This is a diagram showing an example of the schematic structure of the film forming apparatus 1 according to the first embodiment. The film forming apparatus 1 according to the first embodiment includes a chamber 10, a mounting table 20, a supply unit 30, a heat source 40, an exhaust unit 50. In addition, the film forming apparatus 1 further includes a control unit 51.

[0032] The chamber 10 is hermetically constructed and can be depressurized inside. For example, the chamber 10 is made of a material such as aluminum and is formed in a rectangular box shape.

[0033] The mounting table 20 is disposed in the lower region inside the chamber 10. The mounting table 20 is provided with a holding unit 21 for holding the film forming object member. Hereinafter, in the embodiment, the case where the film forming object member is a plate-like member P and film formation is performed on the surface of the member P will be described. The holding unit 21 is configured to be able to fix the member P. For example, the holding unit 21 is provided with a engaging portion 22 outside the side surface of the member P, and the engaging portion 22 clamps the side surface of the member P from the outside, thereby fixing and holding the position of the member P.

[0034] The mounting table 20 is provided with a driving unit 23 for driving the holding unit 21. The driving unit 23 is configured to be able to move the holding unit 21 within the upper surface of the mounting table 20. For example, on the upper surface of the mounting table 20, a ball screw 27a and a pair of guide rails 24a are provided in parallel with a horizontal one direction (a direction perpendicular to the Figure 1 plane of the paper). A moving base 26 is provided on the guide rail 24a. A nut 26a engaged with the ball screw 27a is fixed to the moving base 26. A driving mechanism such as a motor and a gear for rotating the ball screw 27a is provided at the end of the ball screw 27a. By rotating the ball screw 27a by the driving force of the motor, the moving base 26 can move along the guide rail 24a. On the moving base 26, a ball screw (not shown) and a pair of guide rails 24b are similarly provided in parallel with a crossing direction ( Figure 1 the left-right direction) crossing the one direction. The holding unit 21 is provided on the guide rail 24b. A nut engaged with the ball screw is fixed to the holding unit 21. A driving mechanism such as a motor and a gear for rotating the ball screw is provided at the end of the ball screw. By rotating the ball screw by the driving force of the motor, the holding unit 21 can move in the horizontal crossing direction along the guide rail 24b. Thus, the moving base 26 on which the holding unit 21 is mounted moves in one direction, and the holding unit 21 moves in the crossing direction, so that the holding unit 21 can move in two directions within the upper surface of the mounting table 20. In addition, the structure of the driving unit 23 is not limited thereto. The driving unit 23 only needs to be able to move the holding unit 21 within the upper surface of the mounting table 20, and any structure may be used.

[0035] Above the mounting table 20, a supply unit 30 is arranged. The supply unit 30 is airtightly provided on the ceiling of the chamber 10. The supply unit 30 is provided with a storage unit 31 for storing the film-forming material. Hereinafter, in the embodiment, the case where the film-forming material is silicon and a silicon film is formed on the member P will be described. Powdery silicon is stored as the film-forming material in the storage unit 31. A cylinder 32 is connected to the lower part of the storage unit 31. The cylinder 32 communicates with the storage unit 31, and the lower end of the cylinder 32 is provided as a supply port 32a. The powdery silicon stored in the storage unit 31 is supplied into the chamber 10 through the cylinder 32 and falls onto the member P from the supply port 32a.

[0036] Inside the chamber 10, a heat source 40 for heating and melting the film-forming material is arranged. The heat source 40 can heat the film-forming material even in a vacuum. As the heat source that can heat the film-forming material in a vacuum, an electron beam and a laser beam can be cited. The heat source 40 emits an electron beam or a laser beam. Hereinafter, in the embodiment, it is assumed that the heat source 40 emits an electron beam 40a, but it can also be assumed that the heat source 40 emits a laser beam. The heat source 40 is arranged so that the emitted electron beam 40a irradiates the portion of the surface of the member P where the film-forming material is supplied from the supply unit 30. That is, in the first embodiment, the heat source 40 is arranged so that the electron beam 40a irradiates the position on the surface of the member P that is below the supply port 32a. In addition, Figure 1 in, the heat source 40 is arranged inside the chamber 10, but it is not limited to such a structure. The heat source that outputs an electron beam or a laser beam can also be arranged outside the chamber 10, and the electron beam or laser beam output from the heat source can be guided into the chamber 10 by light guiding members such as mirrors, lenses, transmission windows, and optical fibers and irradiated onto the member P.

[0037] The exhaust unit 50 can be connected to, for example, an exhaust port 10e provided at the bottom of the chamber 10. The exhaust unit 50 may include a pressure valve and a vacuum pump. The vacuum pump may include a turbomolecular pump, a rough vacuum pump, or a combination thereof.

[0038] An opening 10a for feeding in or out the member P is provided on the side wall of the chamber 10. The opening 10a can be opened and closed by a gate valve 10b.

[0039] The control unit 51 processes computer-executable commands for causing the film-forming apparatus 1 to perform various processes described in the present disclosure. The control unit 51 can be configured to control each element of the film-forming apparatus 1 so that it performs various processes described herein. The control unit 51 is configured to include a computer, for example.

[0040] In addition, as described above, silicon is used as a material for coating the surface of components inside a chamber in semiconductor manufacturing equipment. However, when a material such as silicon that is prone to oxidation is formed into a film through a non-vacuum process such as spraying, it is difficult to prevent oxidation of the surface of silicon particles when the silicon is melted, resulting in the formation of an oxidized portion with weak adhesion in the formed silicon film. This oxidized portion peels off, and the peeled silicon particles become fine particles, causing contamination and potentially impairing the functions of the manufactured semiconductor.

[0041] In the past, in spraying, measures such as reducing pressure and replacing with an inert gas were also taken to prevent oxidation, but it was impossible to reduce the oxygen concentration in the atmosphere to a value at which silicon does not oxidize, and there still remains a technical problem of forming a film while suppressing oxidation.

[0042] Therefore, the film forming apparatus 1 forms a silicon film using the film forming method described below.

[0043] The member P to be formed into a film is transported into the chamber 10 from the opening 10a and placed on the holding portion 21. The film forming apparatus 1 holds the placed member P using the holding portion 21. The film forming apparatus 1 closes the gate valve 10b and drives the exhaust portion 50 to reduce the pressure inside the chamber 10 to a predetermined vacuum level. For example, the film forming apparatus 1 reduces the pressure inside the chamber 10 to 10 －6 Torr or more and less than 10 －2 Torr, and more preferably reduces the pressure to 10 －5 Torr or more and less than 10 －3 Torr. In addition, if it is possible to introduce a reducing gas or the like into the chamber 10 after or while reducing the pressure inside the chamber 10 and form a film in a reducing gas atmosphere to prevent oxidation, the pressure inside the chamber 10 can also be reduced to 10 －3 Torr or more. Figure 10 It is a diagram showing another example of the schematic structure of the film forming apparatus 1 according to the first embodiment. Figure 10 The shown film forming apparatus 1 shows in Figure 1The case where the film forming apparatus 1 shown is provided with a gas supply system 90 for supplying a reducing gas and a diluting gas. The gas supply system 90 has a reducing gas supply source 91 and a diluting gas supply source 92 for supplying a diluting gas. The chamber 10 is provided with gas inlets 10c, 10d. The reducing gas supply source 91 is configured to supply the reducing gas to the gas inlet 10c via a flow controller 93 and introduce the reducing gas into the chamber 10 from the gas inlet 10c. The diluting gas supply source 92 is configured to supply the diluting gas to the gas inlet 10d via a flow controller 94 and introduce the diluting gas into the chamber 10 from the gas inlet 10d. The film forming apparatus 1 may also supply at least the reducing gas from the reducing gas supply source 91 and introduce it into the chamber 10 after or while reducing the pressure in the chamber 10, and perform the following film formation in a reducing gas atmosphere. The reducing gas is, for example, a gas containing at least one gas selected from CO gas, H2 gas, CH4 gas, C3H8 gas, C4H 10 gas, etc. In addition, a rare gas such as Ar gas as a diluting gas may be supplied from the diluting gas supply source 92 to the reducing gas, introduced into the chamber 10, and a gas formed by combining the reducing gas and the rare gas may be introduced into the chamber 10 to perform the following film formation.

[0044] The film forming apparatus 1 supplies a film forming material from the supply unit 30 to the surface of the member P, and melts the supplied film forming material using the heat source 40 to form a film. Figure 2 It is a diagram showing an outline of the film formation of the film forming apparatus 1 of the first embodiment. Figure 2 The housing portion 31 and the cylinder 32 constituting the supply unit 30 are shown. The internal space of the housing portion 31 that houses the powder silicon S1 is formed in a conical shape that gradually narrows downward in width, and the housing portion 31 houses the powder silicon S1. A cylinder 32 communicating with the internal space is connected to the lower portion of the housing portion 31. A throttle mechanism 33 capable of changing the size of the opening is provided at the connecting portion between the housing portion 31 and the cylinder 32. By changing the size of the opening using the throttle mechanism 33, the supply unit 30 can adjust the supply amount of the powder flowing from the housing portion 31 to the cylinder 32. In addition, the housing portion 31 may be configured to be decompressed so that the supply amount of the powder is not affected by the pressure.

[0045] The silicon S1 flowing into the cylinder 32 is supplied to the surface of the member P in a free-falling manner from the supply port 32a. The heat source 40 irradiates an electron beam 40a to a position below the supply port 32a on the surface of the member P. As a result, the silicon S1 falling from the supply port 32a is heated and melted by the electron beam 40a emitted from the heat source 40 to form a silicon film.

[0046] The member P is configured to be movable within the upper surface of the mounting table 20 by the drive unit 23. The film forming apparatus 1 moves the holding unit 21 that holds the member P by the drive unit 23, so that the portion where the silicon film is to be formed on the member P moves, and a silicon film is formed on the surface of the member P.

[0047] Thus, the film forming apparatus 1 of the first embodiment can form a silicon film while suppressing the oxidation of silicon by forming the silicon film in the depressurized chamber 10. Thereby, the film forming apparatus 1 can manufacture a component having a silicon-containing film while suppressing the oxidation of silicon.

[0048] Figure 3 It is a diagram showing an example of the film forming result of the silicon film of the embodiment. In Figure 3 , the silicon film formed by depressurizing the inside of the chamber 10 to 10 －4 Torr by the film forming apparatus 1 is indicated as "high vacuum state". In addition, in Figure 3 , as a reference example, the silicon film formed by replacing with an inert gas is indicated as "inert gas replacement". In Figure 3 , the oxidized portion formed by the oxidation of the silicon film is shown in black. The oxidized portion of the silicon film is inspected by mapping oxygen atoms using energy dispersive X-ray analysis (EDX analysis). As Figure 3 shows, compared with the silicon film of "inert gas replacement", the black oxidized portion of the silicon film in the "high vacuum state" is less. Thus, the film forming apparatus 1 can form a silicon film while suppressing oxidation. Thereby, for example, by applying a silicon film to the surface of a component in the chamber of a semiconductor manufacturing apparatus using the film forming apparatus 1, contamination in the semiconductor manufacturing apparatus can be suppressed.

[0049] Here, as a method of forming a silicon film in the depressurized chamber 10, there are physical vapor deposition (PVD) and chemical vapor deposition (CVD). Since PVD and CVD are vacuum processes, they are useful as methods of forming a film while preventing oxidation. However, it is difficult to form a film of 10 μm or more by PVD and CVD, and it is difficult to form a thick film that is required for coating as a consumable component.

[0050] In addition, the film forming apparatus 1 can form a film of several hundred μm or more without oxidizing a material such as silicon that is easily oxidized by itself. The member P that is the member to be formed into a film is, for example, a consumable component such as a component in the chamber of a semiconductor manufacturing apparatus. Examples of such consumable components include an edge ring, an upper electrode, an exhaust ring, and a deposit shield. Thereby, the film forming apparatus 1 of the embodiment can form a thick silicon film on consumable components such as components in the chamber of a semiconductor manufacturing apparatus.

[0051] As described above, the film forming apparatus 1 of the first embodiment includes a chamber 10, an exhaust section 50, a holding section 21, a supply section 30, and a heat source 40. The exhaust section 50 reduces the pressure inside the chamber 10 to a predetermined degree of vacuum. The holding section 21 is disposed inside the chamber 10 and holds the film forming target member (member P). The supply section 30 supplies a silicon-containing film forming material (silicon S1) to the surface of the film forming target member. The heat source 40 can be heated in a predetermined degree of vacuum to melt the supplied film forming material. Thus, the film forming apparatus 1 can form a film while suppressing oxidation. In addition, the film forming apparatus 1 can form a relatively thick film of the film forming material.

[0052] In addition, the film forming apparatus 1 of the first embodiment further includes a drive section 23. The heat source 40 heats the portion where the film forming material is supplied from the supply section 30 to the surface of the film forming target member. The drive section 23 drives the holding section 21 so that the portion where the film forming material is supplied moves on the surface of the film forming target member. Thus, the film forming apparatus 1 can form a film while suppressing oxidation on the surface of the film forming target member.

[0053] In addition, the exhaust section 50 reduces the pressure inside the chamber 10 to 10 －6 Torr or more and less than 10 －2 Torr, and more preferably reduces the pressure to 10 －5 Torr or more and less than 10 －3 Torr. Thus, the film forming apparatus 1 can form a film while suppressing oxidation. In addition, after or while reducing the pressure inside the chamber 10, a reducing gas or the like is introduced into the chamber 10 from the gas introduction ports 10c and 10d, and the film forming material is melted and a film is formed in an atmosphere of the reducing gas, so that a silicon film can be formed while suppressing oxidation of silicon.

[0054] In addition, the heat source 40 outputs an electron beam or a laser to melt the film forming material. Thus, even when the pressure inside the chamber 10 is 10 － 6 Torr or more and less than 10 －2 Torr in a vacuum state, the film forming apparatus 1 can melt the film forming material and can form the film forming material on the film forming target member.

[0055] In addition, the film forming material is silicon. Thus, the film forming apparatus 1 can form a silicon film having a relatively high resistance to plasma on the surface of the film forming target member.

[0056] In addition, the supply unit 30 supplies a film-forming material that is in powder form. The supply unit 30 is disposed above the holding unit 21. The powder film-forming material is accommodated in an accommodation unit 31 formed in a manner such that the width gradually narrows downward, and the film-forming material is supplied from a supply port 32a provided below the accommodation unit 31 and communicating with the accommodation unit 31. Thus, even when using a film-forming material that is in powder form, the film-forming apparatus 1 can form the film-forming material on the surface of the film-forming target member while suppressing oxidation.

[0057] [Second Embodiment]

[0058] Next, the second embodiment will be described. Figure 4 FIG. is an example showing a schematic configuration of the film-forming apparatus 1 according to the second embodiment. The film-forming apparatus 1 according to the second embodiment has a structure partially the same as that of the film-forming apparatus 1 according to the Figure 1 first embodiment shown. Therefore, the same reference numerals are given to the same parts and the description thereof is omitted, and mainly different parts will be described. The film-forming apparatus 1 according to the second embodiment has a supply unit 60 for supplying a film-forming material.

[0059] The film-forming apparatus 1 according to the second embodiment has a plurality of robotic arms as the supply unit 60. In the Figure 4 example, as the supply unit 60, two robotic arms 61a and 61b are provided in the chamber 10. In the present embodiment, the film-forming material is formed in a rod shape. The supply unit 60 supplies the rod-shaped film-forming material. For example, the robotic arms 61a and 61b hold the rod-shaped silicon and bring the rod-shaped silicon into contact with the surface of the member P.

[0060] The heat source 40 is arranged such that the emitted electron beam 40a irradiates the portion of the surface of the member P where the rod-shaped film-forming material is supplied from the supply unit 60. For example, the heat source 40 is arranged such that the electron beam 40a irradiates the contact portion where the rod-shaped silicon contacts the surface of the member P, and the electron beam 40a is irradiated to the contact portion.

[0061] In addition, the supply unit 60 can either bring the rod-shaped silicon into contact with the surface of the member P or supply the rod-shaped silicon in a manner such that the silicon is located near the surface of the member P without contacting the surface of the member P. In the case of not contacting the surface of the member P, the electron beam 40a can also be irradiated to the tip of the rod-shaped silicon to cause the melted silicon to fall on the member P for film formation.

[0062] When forming a silicon film on the member P as the film-forming target using the film-forming apparatus 1 according to the second embodiment, the member P is transported into the chamber 10 from the opening 10a and placed on the holding unit 21. The film-forming apparatus 1 holds the placed member P using the holding unit 21. The film-forming apparatus 1 closes the gate valve 10b and drives the exhaust unit 50 to reduce the pressure in the chamber 10 to a predetermined vacuum level. For example, the film-forming apparatus 1 reduces the pressure in the chamber 10 to 10－6 above Torr and less than 10 －2 Torr, and more preferably, reduced pressure to 10 －5 above Torr and less than 10 －3 Torr. In addition, if it is possible to introduce a reducing gas or the like into the chamber 10 after or while reducing the pressure in the chamber 10, and perform film formation in a reducing gas atmosphere to prevent oxidation, the pressure in the chamber 10 can also be reduced to 10 －3 above Torr. Figure 11 It is a diagram showing another example of the schematic structure of the film forming apparatus 1 of the second embodiment. Figure 11 The shown film forming apparatus 1 represents the case where Figure 4 the shown film forming apparatus 1 is provided with a gas supply system 90 having the same structure as Figure 10 . The reducing gas supply source 91 is configured to be able to supply a reducing gas to the gas introduction port 10c through the flow controller 93 and introduce the reducing gas into the chamber 10 from the gas introduction port 10c. The dilution gas supply source 92 is configured to be able to supply a dilution gas to the gas introduction port 10d through the flow controller 94 and introduce the dilution gas into the chamber 10 from the gas introduction port 10d. The film forming apparatus 1 can also supply at least a reducing gas from the reducing gas supply source 91 after or while reducing the pressure in the chamber 10 and introduce it into the chamber 10, and perform the following film formation in a reducing gas atmosphere. The reducing gas is, for example, a gas containing at least one gas selected from CO gas, H2 gas, CH4 gas, C3H8 gas, C4H 10 gas, etc. In addition, it is also possible to supply a rare gas such as Ar gas as a dilution gas to the reducing gas from the dilution gas supply source 92 and introduce it into the chamber 10, and introduce a gas obtained by combining a reducing gas and a rare gas into the chamber 10 and perform the following film formation.

[0063] The film forming apparatus 1 supplies a film forming material to the surface of the member P from the supply unit 60, and melts the supplied film forming material using the heat source 40 to perform film formation. Figure 5 It is a diagram explaining the outline of the film formation of the film forming apparatus 1 of the second embodiment. Figure 5Two robotic arms 61a and 61b that make up the supply unit 60 are shown. The robotic arms 61a and 61b hold the silicon rod S2 formed in a rod shape and bring the silicon rod S2 into contact with the surface of the member P. The robotic arms 61a and 61b alternately bring the silicon rod S2 into contact with the surface of the member P in such a manner that the supply of silicon is not interrupted. For example, one of the robotic arms 61a and 61b brings the silicon rod S2 into contact with the surface of the member P to supply silicon. Then, when the length of the silicon rod S2 supplied by one robotic arm becomes equal to or less than a specified length, the other robotic arm brings the silicon rod S2 into contact with the surface of the member P to supply silicon. One robotic arm replaces the silicon rod S2 that has become equal to or less than the specified length with a new silicon rod S2. The length of the silicon rod S2 is detected, for example, based on the position of the tip of the robotic arm that holds the silicon rod S2. In the film forming apparatus 1 of the second embodiment, a plurality of silicon rods S2 are pre-arranged in the chamber 10 for replacement.

[0064] The silicon rod S2 is supplied to the surface of the member P using the robotic arms 61a and 61b. The heat source 40 irradiates the electron beam 40a at the position where the silicon rod S2 contacts the surface of the member P. As a result, the silicon rod S2 is heated and melted by the electron beam 40a emitted from the heat source 40, and a silicon film is formed.

[0065] The member P is configured to be movable within the upper surface of the mounting table 20 using the drive unit 23. The film forming apparatus 1 moves the holding unit 21 that holds the member P using the drive unit 23, so that the portion where the silicon film is formed on the member P is moved, and a silicon film is formed on the surface of the member P.

[0066] As described above, the film forming apparatus 1 of the second embodiment forms a silicon film in the chamber 10 that has been decompressed, thereby enabling the formation of a silicon film while suppressing the oxidation of silicon. In addition, after the chamber 10 has been decompressed or while decompression is being performed, a reducing gas or the like is introduced into the chamber 10 from the gas inlets 10c and 10d, and the film forming material is melted and film formed in an atmosphere of the reducing gas, thereby enabling the formation of a silicon film while suppressing the oxidation of silicon.

[0067] As described above, the supply unit 60 supplies the film forming material (silicon rod S2) configured in a rod shape. The supply unit 60 supplies the film forming material from one or more directions. The supply unit 60 holds and supplies the rod-shaped film forming material using a plurality of robotic arms 61a and 61b. Thus, even when using a rod-shaped film forming material, the film forming apparatus 1 can form the film forming material on the surface of the film forming target member while suppressing oxidation.

[0068] [Third Embodiment]

[0069] Next, the third embodiment will be described. Figure 6 is a diagram showing an example of the schematic structure of the film forming apparatus 1 of the third embodiment. The film forming apparatus 1 of the third embodiment is the same as Figure 1The first embodiment shown, Figure 4 The film forming apparatus 1 of the second embodiment shown has a structure that is partly the same, so the same reference numerals are given to the same parts and the description thereof is omitted, and mainly different parts will be described. The film forming apparatus 1 of the second embodiment has a supply unit 70 for supplying a film forming material.

[0070] The supply unit 70 is provided with a cassette 71 that houses a plurality of rod-shaped film forming materials. A linear tube 72 is connected to the cassette 71. The tube 72 is formed of quartz, for example. The tube 72 communicates with the cassette 71, and the lower end of the tube 72 is provided as a supply port 72a. Rod-shaped silicon is housed in the cassette 71. The rod-shaped silicon housed in the cassette 71 is sequentially supplied to the tube 72.

[0071] The heat source 40 is arranged so that the electron beam 40a emitted is irradiated onto the part of the surface of the member P where the rod-shaped film forming material is supplied from the supply unit 70.

[0072] When forming a silicon film on the member P as the film forming object using the film forming apparatus 1 of the third embodiment, the member P is transported into the chamber 10 from the opening 10a and placed on the holding unit 21. The film forming apparatus 1 holds the placed member P using the holding unit 21. The film forming apparatus 1 closes the gate valve 10b and drives the exhaust unit 50 to decompress the inside of the chamber 10 to a predetermined vacuum degree. For example, the film forming apparatus 1 decompresses the inside of the chamber 10 to 10 －6 Torr or more and less than 10 －2 Torr, and more preferably decompresses it to 10 －5 Torr or more and less than 10 －3 Torr. In addition, if it is possible to introduce a reducing gas or the like into the chamber 10 after or while decompressing the inside of the chamber 10 and perform film formation in a reducing gas atmosphere to prevent oxidation, the inside of the chamber 10 can also be decompressed to 10 －3 Torr or more. Figure 12 It is a diagram showing another example of the schematic structure of the film forming apparatus 1 of the third embodiment. Figure 12 The film forming apparatus 1 shown indicates that in Figure 6 The film forming apparatus 1 shown is provided with a connection with Figure 10The case of the gas supply system 90 having the same structure. The reducing gas supply source 91 is configured to supply a reducing gas to the gas introduction port 10c via the flow controller 93, and introduce the reducing gas into the chamber 10 from the gas introduction port 10c. The dilution gas supply source 92 is configured to supply a dilution gas to the gas introduction port 10d via the flow controller 94, and introduce the dilution gas into the chamber 10 from the gas introduction port 10d. The film forming apparatus 1 may also supply at least a reducing gas from the reducing gas supply source 91 and introduce it into the chamber 10 after or while reducing the pressure in the chamber 10, and perform the following film formation in a reducing gas atmosphere. The reducing gas is, for example, a gas containing at least one gas selected from CO gas, H2 gas, CH4 gas, C3H8 gas, C4H 10 gas, etc. In addition, a rare gas such as Ar gas, which is a dilution gas, may be supplied from the dilution gas supply source 92 to the reducing gas, and introduced into the chamber 10, and a gas obtained by combining the reducing gas and the rare gas may be introduced into the chamber 10 to perform the following film formation.

[0073] The film forming apparatus 1 supplies a film forming material from the supply unit 70 to the surface of the member P, and melts the supplied film forming material using the heat source 40 to form a film. Figure 7 It is a diagram showing an outline of film formation by the film forming apparatus 1 of the third embodiment. Figure 7 The cassette 71 constituting the supply unit 70 is shown. A plurality of rod-shaped silicon rods S2 are accommodated in the cassette 71. A linear tube 72 is connected to the cassette 71. The silicon rods S2 are continuously supplied from the cassette 71 to the tube 72 in sequence. A coil 73 is disposed on the outer periphery of an intermediate portion in the middle of the tube 72 before reaching the supply port 72a. When the end of the silicon rod S2 passes through the position of the coil 73, high-frequency power is supplied from a high-frequency power source (not shown) to the coil 73. The ends of the continuously supplied silicon rods S2 are heated and melted by the high-frequency induction generated by the high-frequency power flowing through the coil 73, and the ends of the adjacent silicon rods S2 are joined to each other. That is, each silicon rod S2 is in a continuous state in the tube 72. The joined silicon rods S2 are output from the supply port 72a. The supply unit 70 is provided with a pair of conveying rollers 74 at the tip of the supply port 72a. The pair of conveying rollers 74 sandwich the silicon rod S2 therebetween, and the pair of conveying rollers 74 can be controlled to rotate by a motor (not shown). The supply unit 70 can adjust the supply amount of the silicon rod S2 by changing the rotation speed of the conveying rollers 74.

[0074] The silicon rod S2 sent out by the conveying rollers 74 is supplied to the surface of the member P. The heat source 40 irradiates an electron beam 40a to the position where the silicon rod S2 contacts the surface of the member P. As a result, the silicon rod S2 is heated and melted by the electron beam 40a emitted from the heat source 40 to form a silicon film.

[0075] The member P is configured to be movable within the upper surface of the mounting table 20 by the drive unit 23. The film forming apparatus 1 moves the holding unit 21 that holds the member P by the drive unit 23, so that the portion where the silicon film is to be formed on the member P is moved, and a silicon film is formed on the surface of the member P.

[0076] Thus, the film forming apparatus 1 of the third embodiment forms a silicon film in the chamber 10 that has been decompressed, so that a silicon film can be formed while suppressing the oxidation of silicon. Further, after the inside of the chamber 10 has been decompressed or while decompression is being performed, a reducing gas or the like is introduced into the chamber 10 from the gas inlets 10c and 10d, and the film forming material is melted and film formed in the atmosphere of the reducing gas, so that a silicon film can be formed while suppressing the oxidation of silicon.

[0077] As described above, the supply unit 70 supplies the film forming material (silicon rod S2) provided in a rod shape. The supply unit 70 supplies the film forming material from one or more directions. The supply unit 70 supplies the film forming material using rollers (transport rollers 74). Thereby, even when using a film forming material provided in a rod shape, the film forming apparatus 1 can film the film forming material on the surface of the film forming target member while suppressing oxidation.

[0078] Further, the supply unit 70 sequentially supplies a plurality of rod-shaped film forming materials to the tube 72, and heats the ends of the respective film forming materials using the heating mechanism provided in the tube 72, and supplies them in such a manner that the ends of the respective film forming materials are joined. Thereby, even when the film forming material is provided in a rod shape and supplied, the film forming apparatus 1 can stably supply the film forming material without interruption.

[0079] [Fourth Embodiment]

[0080] Next, the fourth embodiment will be described. Figure 8 FIG. is an example showing a schematic configuration of the film forming apparatus 1 of the fourth embodiment. The film forming apparatus 1 of the fourth embodiment has a structure partially the same as that of the film forming apparatus 1 of the first embodiment shown in Figure 1 , the second embodiment shown in Figure 4 , and the third embodiment shown in Figure 6 . Therefore, the same reference numerals are given to the same parts and the description thereof is omitted, and mainly different parts will be described. The film forming apparatus 1 of the fourth embodiment has a supply unit 80 that supplies a film forming material.

[0081] The supply unit 80 is arranged above the mounting table 20. The supply unit 80 is airtightly arranged at the top of the chamber 10. The supply unit 80 is provided with a heating container 81 for containing a film-forming material. The heating container 81 contains silicon in a liquid state as a film-forming material by heating. A linear nozzle 82 is connected to the lower part of the heating container 81. The nozzle 82 is formed of quartz, for example. The nozzle 82 is connected to the heating container 81, and the lower end of the nozzle 82 is set as a supply port 82a. The liquid silicon contained in the heating container 81 is cooled and solidified into a rod shape at the nozzle 82, and is supplied into the chamber 10 by the nozzle 82.

[0082] The heat source 40 is disposed so that the emitted electron beam 40 a is irradiated onto a portion of the surface of the member P to which the rod-shaped film-forming material is supplied from the supply portion 80 .

[0083] When a silicon film is formed on a member P to be film-formed using the film-forming apparatus 1 of the fourth embodiment, the member P is transported from the opening 10a into the chamber 10 and placed on the holding portion 21. The film-forming apparatus 1 holds the placed member P using the holding portion 21. The film-forming apparatus 1 closes the gate valve 10b and drives the exhaust portion 50 to reduce the pressure in the chamber 10 to a predetermined vacuum level. For example, the film-forming apparatus 1 reduces the pressure in the chamber 10 to 10 －6 Torr or more and less than 10 －2 Torr, preferably reduced to 10 －5 Torr or more and less than 10 －3 In addition, if it is possible to introduce a reducing gas into the chamber 10 after or while the chamber 10 is depressurized, and film formation is performed in a reducing gas atmosphere to prevent oxidation, the chamber 10 may be depressurized to 10 －3 Torr and above. Figure 13 It is a diagram showing another example of the schematic structure of the film forming apparatus 1 according to the fourth embodiment. Figure 13 The film forming device 1 shown in FIG. Figure 8 The film forming device 1 shown is provided with Figure 10 The case of the gas supply system 90 of the same structure. The reducing gas supply source 91 is configured to supply the reducing gas to the gas inlet port 10c by means of the flow controller 93, and introduce the reducing gas into the chamber 10 from the gas inlet port 10c. The dilution gas supply source 92 is configured to supply the dilution gas to the gas inlet port 10d by means of the flow controller 94, and introduce the dilution gas into the chamber 10 from the gas inlet port 10d. The film forming apparatus 1 may also supply the reducing gas from at least the reducing gas supply source 91 and introduce it into the chamber 10 after or while the pressure in the chamber 10 is reduced, and perform the following film formation in the reducing gas atmosphere. The reducing gas is, for example, a gas selected from CO gas, H2 gas, CH4 gas, C3H8 gas, C4H10 a gas of at least one gas selected from gases such as. Further, a rare gas such as Ar gas as a dilution gas may be supplied from the dilution gas supply source 92 to the reducing gas, introduced into the chamber 10, and a gas formed by combining the reducing gas and the rare gas may be introduced into the chamber 10 to perform the following film formation.

[0084] The film forming apparatus 1 supplies a film forming material from the supply unit 80 to the surface of the member P, and melts the supplied film forming material using the heat source 40 to form a film. Figure 9 It is a diagram showing an outline of film formation of the film forming apparatus 1 of the fourth embodiment. Figure 9 The heating container 81 and the nozzle 82 constituting the supply unit 80 are shown. The heating container 81 stores silicon S3 in the container, and a coil 83 is provided along the circumferential surface of the container. High-frequency power is supplied from a high-frequency power supply (not shown) to the coil 83. The heating container 81 heats silicon S3 under the action of high-frequency induction generated by the high-frequency power flowing through the coil 83, and accommodates silicon S3 in a liquid state.

[0085] The nozzle 82 is connected to the heating container 81. The nozzle 82 is provided with a water-cooled cooling pipe 84, for example, on the outer periphery of the middle part in the middle of reaching the supply port 82a, and cools the middle part. The liquid silicon S3 flowing into the nozzle 82 is cooled into a solid in the middle part and is output in a rod shape from the supply port 82a. The supply unit 80 is provided with a pair of conveying rollers 85 at the tip of the supply port 82a. The pair of conveying rollers 85 sandwich the rod-shaped silicon S3 therebetween, and the pair of conveying rollers 85 can be controlled to rotate by a motor (not shown). The supply unit 80 can adjust the supply amount of silicon S3 by changing the rotation speed of the conveying rollers 85.

[0086] The silicon S3 sent out by the conveying rollers 85 is supplied to the surface of the member P. The heat source 40 irradiates an electron beam 40a to the position where the silicon S3 contacts the surface of the member P. As a result, the silicon S3 is heated and melted by the electron beam 40a emitted from the heat source 40 to form a silicon film.

[0087] The member P is configured to be movable within the upper surface of the mounting table 20 by the driving unit 23. The film forming apparatus 1 moves the holding unit 21 holding the member P by the driving unit 23, so that the portion where the silicon film is formed on the member P moves, and a silicon film is formed on the surface of the member P.

[0088] Thus, the film forming apparatus 1 of the fourth embodiment can form a silicon film while suppressing the oxidation of silicon by forming a silicon film in the decompressed chamber 10. Further, after the inside of the chamber 10 is decompressed or while decompression is being performed, a reducing gas or the like is introduced into the chamber 10 from the gas inlets 10c and 10d, and the film forming material is melted and film formation is performed in an atmosphere of the reducing gas, so that a silicon film can be formed while suppressing the oxidation of silicon.

[0089] As described above, the supply unit 80 melts the film-forming material in the heating container 81 and causes the melted film-forming material to flow toward the nozzle 82 and be supplied in a rod shape. Thereby, the film-forming apparatus 1 can stably supply the film-forming material without interruption.

[0090] The embodiments have been described above, but it should be considered that the embodiments disclosed this time are illustrative in all respects and not restrictive. In fact, the above-described embodiments can be specifically implemented in various forms. In addition, the above-described embodiments can also be omitted, replaced, and changed in various forms without departing from the scope of the claims and their gist.

[0091] For example, in each of the above embodiments, the case where the holding unit 21 is driven within the upper surface of the mounting table 20 by the drive unit 23 to perform film formation has been described as an example. However, the disclosed technology is not limited to this. The film-forming apparatus 1 can also perform film formation while causing the drive unit 23 to drive the supply units 30, 60, 70, 80 and the heat source 40 to move relative to the mounting table 20.

[0092] In addition, in the second embodiment, the case where the rod-shaped film-forming material is held and supplied by the two robotic arms 61a and 61b has been described as an example. However, the disclosed technology is not limited to this. The film-forming apparatus 1 can also hold and supply the rod-shaped film-forming material by using three robotic arms.

[0093] In addition, in the film-forming apparatus 1 of the above embodiment, it may be possible to sufficiently preheat and also control the temperature drop after film formation. For example, the film-forming apparatus 1 can also provide a heater in the region of the contact member P of the holding unit 21 and control the temperature drop after film formation by using the heater. For example, the temperature drop is controlled as follows: the temperature drop rate at which no cracks occur in the formed silicon film is obtained by experiments or the like, and the temperature is dropped at the obtained temperature drop rate. Thereby, it is possible to prevent cracks from occurring in the formed silicon film.

[0094] In addition, it should be considered that the embodiments disclosed this time are illustrative in all respects and not restrictive. In fact, the above-described embodiments can be specifically implemented in various forms. In addition, the above-described embodiments can also be omitted, replaced, and changed in various forms without departing from the scope of the appended claims and their gist.

Claims

1. A film forming apparatus, wherein, the film forming apparatus includes: a chamber; an exhaust unit that decompresses the inside of the chamber to a predetermined vacuum degree; a holding unit that is disposed inside the chamber and holds a film forming target member; a supply unit that supplies a silicon-containing film forming material to the surface of the film forming target member; and a heat source that can be heated in the predetermined vacuum degree to melt the supplied film forming material.

2. The film forming apparatus according to claim 1, wherein, the heat source heats a portion where the film forming material is supplied from the supply unit to the surface of the film forming target member, and the film forming apparatus further includes a driving unit that drives the holding unit or drives the supply unit and the heat source to move the portion on the surface of the film forming target member.

3. The film forming apparatus according to claim 1 or 2, wherein, The exhaust section reduces the pressure in the chamber to 10 －6 Torr or more and less than 10 －2 Torr.

4. The film forming apparatus according to claim 3, wherein, The exhaust section reduces the pressure in the chamber to 10 －5 Torr or more and less than 10 －3 Torr.

5. The film forming apparatus according to any one of claims 1 to 4, wherein, the heat source melts the film forming material by outputting an electron beam or a laser.

6. The film forming apparatus according to any one of claims 1 to 5, wherein, the supply unit supplies the film forming material that is set as powder.

7. The film forming apparatus according to claim 6, wherein, the supply unit is disposed above the holding unit, the powder film forming material is accommodated in a housing portion formed in a manner that the width gradually narrows downward, and the film forming material is supplied from a supply port provided below the housing portion and communicating with the housing portion.

8. The film forming apparatus according to any one of claims 1 to 5, wherein, the supply unit supplies the film forming material that is set as a rod.

9. The film forming apparatus according to claim 8, wherein, the supply unit supplies the film forming material from one or more directions.

10. The film forming apparatus according to claim 8 or 9, wherein, the supply unit respectively holds and supplies the rod-shaped film forming material by using a plurality of robotic arms.

11. The film forming apparatus according to claim 8 or 9, wherein, the supply unit supplies the film forming material by using a roller.

12. The film forming apparatus according to any one of claims 8, 9, and 11, wherein, the supply unit sequentially supplies a plurality of rod-shaped film forming materials to a tube, heats the ends of the respective film forming materials by a heating mechanism provided in the tube, and supplies the ends of the respective film forming materials in a joined manner.

13. The film forming apparatus according to any one of claims 8, 9, and 11, wherein, the supply unit melts the film forming material in a heating container, and supplies the melted film forming material to a nozzle to be formed into a rod shape.

14. The film forming apparatus according to any one of claims 1 to 13, wherein, the film forming apparatus has a gas inlet for introducing a reducing gas into the chamber.

15. A method for manufacturing a component having a silicon-containing film, wherein, the method for manufacturing the component having a silicon-containing film includes the following steps: holding a film forming target member on a holding unit disposed in a chamber; decompressing the inside of the chamber to a predetermined vacuum degree; Supply a silicon-containing film-forming material from the supply unit to the surface of the film-forming object member; and Melt the supplied film-forming material using a heat source capable of heating in the predetermined degree of vacuum.

16. The method for manufacturing a component having a silicon-containing film according to claim 15, wherein In the melting step, the heat source heats the portion where the film-forming material is supplied to the surface of the film-forming object member, The method for manufacturing a component having a silicon-containing film further includes the following steps: Drive the holding unit or drive the supply unit and the heat source so that the portion moves on the surface of the film-forming object member.

17. The method for manufacturing a component having a silicon-containing film according to claim 15 or 16, wherein The step of reducing pressure reduces the pressure in the chamber to above 10 -6 Torr and less than 10 -2 Torr.

18. The method for manufacturing a component having a silicon-containing film according to claim 17, wherein The pressure reduction process reduces the pressure in the chamber to above 10 -5 Torr and less than 10 -3 Torr.

19. The method for manufacturing a component having a silicon-containing film according to any one of claims 15 to 18, wherein The heat source melts the film-forming material by outputting an electron beam or a laser.

20. The method for manufacturing a component having a silicon-containing film according to any one of claims 15 to 19, wherein The method for manufacturing a component having a silicon-containing film further includes the following steps: After evacuating the chamber or while evacuating, introduce a reducing gas into the chamber from the gas inlet, In the melting step, the supplied film-forming material is melted in a reducing gas atmosphere.

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