Corrosion device for crystal treatment

Abstract

The embodiment of the invention provides a corrosion device for crystal treatment. The corrosion device comprises a corrosion crucible and a lifting structure arranged on the corrosion crucible, the corrosion crucible is used for filling corrosive liquid, the corrosive liquid is used for leveling crystal morphology and / or corroding target substances, and the target substances comprise volatile matters and / or cosolvents at the bonding positions of the crystals and the crystal tray; the lifting structure is used for placing a crystal, a protrusion is arranged at the bottom of the lifting structure and used for making contact with the surface of the crystal, and the contact area of contact is smaller than a first preset threshold value.

Description

Technical Field

[0001] This specification relates to the field of semiconductor technology, and particularly to an etching device for crystal processing. Background Art

[0002] The seed crystal method is a common method for growing crystals. In this method, the seed crystal is fixed on a crystal tray, so that atoms and molecules in the gas phase / liquid phase aggregate and arrange on the surface of the seed crystal to form a crystal structure and grow the crystal. When separating the crystal subsequently, the main method is cutting separation. The vibration generated by cutting separation easily causes the crystal to crack, damage the crystal tray, and increase cost losses.

[0003] CN116065231A provides a graphite crucible, a silicon carbide solution growth device and a growth method. The graphite crucible includes an outer crucible and an inner crucible. The inner crucible is accommodated in the inner cavity of the outer crucible, and there is a gap between the inner side wall of the outer crucible and the outer side wall of the inner crucible. After the growth of the silicon carbide crystal is completed, the first part and the second part of the inner crucible can be cut and separated. Among them, the part in direct contact with the silicon carbide reaction raw material is for one-time use, while the other part can be reused. Just polish its inner surface clean with sandpaper, but it does not involve the etching and dissolution separation between the graphite tray and the crystal.

[0004] Therefore, it is desirable to provide an etching device for crystal processing to perform crystal processing. Summary of the Invention

[0005] One or more embodiments of this specification provide an etching device for crystal processing. The etching device for crystal processing includes an etching crucible and a lifting structure arranged on the etching crucible. The etching crucible is used to fill the etching solution, and the etching solution is used to flatten the crystal morphology and / or etch the target substance. The target substance includes volatiles and / or cosolvents at the bonding place between the crystal and the crystal tray. The lifting structure is used to place the crystal, and a protrusion is arranged at the bottom of the lifting structure. The protrusion is used to contact the surface of the crystal, and the contact area of the contact is less than a first preset threshold. Brief Description of the Drawings

[0006] This specification will be further described in the form of exemplary embodiments, and these exemplary embodiments will be described in detail through the drawings. These embodiments are not restrictive. In these embodiments, the same numbers represent the same structures, where:

[0007] Figure 1 is a schematic structural diagram of an etching device for crystal processing shown in some embodiments of this specification;

[0008] Figure 2A is a top view of the structure of the etching crucible shown in some embodiments of this specification;

[0009] Figure 2B is a structural sectional view of an etching crucible shown in some embodiments of this specification;

[0010] Figure 3A is a top view of a lifting structure shown in some embodiments of this specification;

[0011] Figure 3B is a structural sectional view of a lifting structure shown in some embodiments of this specification;

[0012] Figure 4 is an exemplary flowchart of an etching method shown in some embodiments of this specification. Detailed implementation manners

[0013] To more clearly illustrate the technical solutions of the embodiments of this specification, the accompanying drawings required for the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some examples or embodiments of this specification. For those of ordinary skill in the art, without creative efforts, this specification can also be applied to other similar scenarios based on these drawings. Unless obvious from the language context or otherwise stated, the same reference numerals in the figures represent the same structure or operation.

[0014] It should be understood that the "system", "device", "unit" and / or "module" used herein is a method for distinguishing different components, elements, parts, portions or assemblies at different levels. However, if other words can achieve the same purpose, the said words can be replaced by other expressions.

[0015] As shown in this specification and the claims, unless the context clearly indicates an exception, words such as "a", "an", "one" and / or "the" are not specifically singular and may also include the plural. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of the clearly identified steps and elements, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0016] Flowcharts are used in this specification to illustrate the operations performed by the systems according to the embodiments of this specification. It should be understood that the operations before or after may not necessarily be executed precisely in sequence. On the contrary, they can be executed in reverse order or simultaneously. At the same time, other operations can also be added to these processes, or one or several operations can be removed from these processes.

[0017] Figure 1 is a structural schematic diagram of an etching device for crystal processing shown in some embodiments of this specification.

[0018] Crystal processing refers to the specific ways of processing crystals. For example, crystal processing may include crystal cutting, crystal polishing, crystal etching, etc.

[0019] The etching device 100 refers to a device capable of performing crystal etching. In some embodiments, the etching device 100 can be used for crystal processing to facilitate the cutting and separation of the processed crystal from the crystal tray 101.

[0020] In some embodiments, referring to Figure 1 , the etching device 100 for crystal processing may include an etching crucible 110 and a lifting structure 120 disposed on the etching crucible 110.

[0021] The etching crucible 110 refers to the crucible component for performing crystal etching. In some embodiments, the etching crucible 110 can be used for filling the etching solution and providing a place for crystal etching.

[0022] The etching solution refers to a liquid with an etching function. For example, strong acid solutions (such as sulfuric acid solution, nitric acid solution, etc.), strong base solutions (such as sodium hydroxide solution, etc.), or solutions including one or a combination of the above solutions.

[0023] In some embodiments, the etching solution is used to flatten the crystal morphology and / or etch the target substance.

[0024] The target substance refers to the substance that needs to be etched. For example, the target substance may include volatiles and / or the solvent 102 at the bonding location between the crystal 103 and the crystal tray 101, which adhere to the outer surface between the crystal and the crystal tray during the crystal growth process and affect the segmentation of the crystal.

[0025] The crystal tray 101 refers to the component for providing a crystal growth place. In some embodiments, the crystal tray 101 may include a graphite tray, a diamond tray, etc.

[0026] It can be understood that when crystal growth is carried out by the top-seeded method, generally the seed crystal is fixed on the crystal tray 101 to facilitate the aggregation and arrangement of atoms and molecules in the gas phase / liquid phase on the surface of the seed crystal to form a crystal structure and carry out crystal growth. The commonly used fixing method is the bonding method. For example, bonding is carried out through glue, etc. This makes it such that when separating the crystal 103 and the crystal tray 101 subsequently, there are substances such as volatiles, solvents, and adhesives at the bonding location between the crystal 103 and the crystal tray 101, which affect the segmentation.

[0027] In some embodiments, the etching solution can be used to be injected into the etching device 100 for etching.

[0028] In some embodiments, the etching solution may be a mixed solution of hydrofluoric acid, nitric acid, and deionized water. In some embodiments, the volume ratio of the aforementioned hydrofluoric acid, nitric acid, and deionized water in the etching solution is 0.8 - 1.2:0.8 - 1.2:1. Preferably, the volume ratio of hydrofluoric acid, nitric acid, and deionized water in the etching solution is 1:1:1.

[0029] In some embodiments, at normal temperature and pressure, the measured nitric acid can be added to the measured deionized water according to the above volume ratio and mixed evenly, and then the measured hydrofluoric acid can be added and mixed evenly to form the etching solution.

[0030] It can be understood that generally, it is considered that when the proportion of the acidic solution in the etching solution is relatively large, the etching effect will be better. In some embodiments, through experimental detection of etching solutions 1 (volume ratio of hydrofluoric acid, nitric acid, and deionized water is 0.5:1:0.5), 2 (volume ratio of hydrofluoric acid, nitric acid, and deionized water is 0.5:1:1), 3 (volume ratio of hydrofluoric acid, nitric acid, and deionized water is 2:1:1), and 4 (volume ratio of hydrofluoric acid, nitric acid, and deionized water is 1:1:1), it is determined that the etching effect of etching solution 4 is the best and it does not react with the crystal and the crystal tray. Therefore, the preferred volume ratio of hydrofluoric acid, nitric acid, and deionized water in the etching solution is 1:1:1.

[0031] By setting the etching solution as a mixed solution of hydrofluoric acid, nitric acid, and deionized water with a volume ratio of 1:1:1, a good etching effect on the target substance can be achieved, and the etching solution does not react with crystal 103 and crystal tray 101.

[0032] In some embodiments, the etching crucible 110 can be made of different materials. For example, metal materials (such as stainless steel, etc.), non-metal materials (such as polypropylene, acrylonitrile-butadiene-styrene copolymer, polytetrafluoroethylene, etc.). In some embodiments, the etching crucible 110 can be made of a material that does not react with the etching solution. For example, polytetrafluoroethylene, etc.

[0033] In some embodiments, the etching crucible 110 can have different shapes. For example, cylindrical, conical, rectangular, etc. In some embodiments, as Figure 2A , Figure 2B shown, the etching crucible 110 can be a hollow cylinder with an open top.

[0034] In some embodiments, the size of the etching crucible 110 can be adaptively designed according to the size of the crystal.

[0035] In some embodiments, a boss 111 can be provided at the bottom of the etching crucible 110.

[0036] The boss 111 can refer to a protruding boss-like structure. In some embodiments, the boss 111 can be used to reduce the volume of the etching crucible 110 and ensure the stability of the etching crucible 110.

[0037] In some embodiments, the boss 111 can be disposed at the bottom of the etching crucible. The protruding direction of the boss can be from the bottom of the etching crucible towards the top of the etching crucible.

[0038] In some embodiments, the boss 111 can be made of different materials. For example, metallic materials (such as stainless steel, etc.), non-metallic materials (such as polypropylene, acrylonitrile-butadiene-styrene copolymer, polytetrafluoroethylene, etc.). In some embodiments, the boss 111 can be made of a material that does not react with the etching solution. For example, polytetrafluoroethylene, etc. In some embodiments, the material of the boss 111 can be the same as or different from the material of the etching crucible 110.

[0039] In some embodiments, the boss 111 can have different shapes. For example, cylindrical, prismatic, irregular shapes, etc.

[0040] In some embodiments, the volume ratio of the boss 111 to the etching crucible 110 is greater than a second preset threshold. In some embodiments, the second preset threshold can be one-half, one-third, etc. That is, the ratio of the volume of the boss 111 to the volume of the etching crucible 110 can be greater than one-half, one-third, etc. The second preset threshold can be determined based on the material of the etching pot. While ensuring the stability of the etching pot, the volume of the boss can be appropriately increased. While ensuring the etching effect, the amount of etching solution used can be reduced. This specification does not limit this.

[0041] By providing a boss at the bottom of the etching crucible and the volume ratio of the boss to the etching crucible being greater than the second preset threshold, the volume inside the etching crucible can be reduced, the consumption of the etching solution can be lowered, and costs can be saved; in addition, the center of gravity of the etching crucible can be lowered to ensure the stability of the crucible.

[0042] In some embodiments, as Figure 2A shown, a first handrail structure 113 can be provided at the top of the etching crucible 110. The first handrail structure 113 refers to a member on the etching crucible 110 for a person to hold. In some embodiments, the first handrail structure 113 can be used for a user to move the etching crucible 110 during an experiment.

[0043] In some embodiments, the first handrail structure 113 can be made of different materials. For example, metallic materials (such as stainless steel, etc.), non-metallic materials (such as polypropylene, acrylonitrile-butadiene-styrene copolymer, polytetrafluoroethylene, etc.). In some embodiments, the material of the first handrail structure 113 can be the same as or different from the material of the etching crucible 110.

[0044] In some embodiments, the first armrest structure 113 may have different shapes. For example, annular groove shape, semi-circular ring shape, irregular shape, etc.

[0045] In some embodiments, as Figure 2A shown, a non-through hole 112 may be provided at the top of the etching crucible 110. The non-through hole 112 may refer to a local depression or opening formed on an object, but not penetrating through the entire thickness of the object. In some embodiments, the non-through hole 112 may include a non-through end and a through end. The non-through end refers to the end that does not penetrate through the top of the etching crucible 110, and the through end refers to the end that penetrates through the top of the etching crucible 110. In some embodiments, the bottom of the aforementioned non-through hole 112 is the non-through end, and the top of the non-through hole 112 is the through end. In some embodiments, the height of the non-through hole 112 is less than the thickness of the top of the etching crucible 110.

[0046] In some embodiments, the non-through hole 112 may be one or more. For example, the number of non-through holes may be four. In some embodiments, multiple non-through holes 112 may be symmetrically arranged at equal intervals on the first armrest structure 113. For example, four non-through holes may be symmetrically arranged in pairs on the left and right sides of the top of the first armrest structure 113.

[0047] In some embodiments, the non-through hole 112 may be used to assist the height adjustment device 125 for fixing.

[0048] The lifting structure 120 refers to a component with placement and lifting functions. In some embodiments, the lifting structure 120 may be used to place the crystal 103.

[0049] In some embodiments, the lifting structure 120 may have different materials. For example, metal materials (such as stainless steel, etc.), non-metal materials (such as polypropylene, acrylonitrile-butadiene-styrene copolymer, polytetrafluoroethylene, etc.), etc. In some embodiments, the lifting structure 120 may be made of a material that does not react with the etching solution. For example, polytetrafluoroethylene, etc. In some embodiments, the material of the lifting structure 120 may be the same as or different from the material of the etching crucible 110.

[0050] In some embodiments, the lifting structure 120 may have different shapes. For example, cylindrical, conical, rectangular, irregular shape, etc. In some embodiments, as Figure 3A , Figure 3B shown, the lifting structure 120 may be a hollow cylinder with opening structures on both sides and a hollow structure at the bottom.

[0051] In some embodiments, as Figure 3AAs shown, the side of the lifting structure 120 may include an opening 121. An opening refers to an open structure that can communicate with the outside. In some embodiments, the opening 121 is used to allow the etching solution to flow between the lifting structure 120 and the etching crucible 110.

[0052] In some embodiments, the openings 121 may be symmetrically arranged on both sides of the lifting structure 120.

[0053] In some embodiments, the opening 121 may have different shapes. For example, rectangular, trapezoidal, irregular shapes, etc.

[0054] By arranging the side of the lifting structure to include an opening, it is convenient to normally pick up the crystal and allow the etching solution to flow between the entire etching device, ensuring the normal progress of the etching process.

[0055] In some embodiments, the bottom of the lifting structure 120 is a hollow structure 122. In some embodiments, the hollow structure 122 can be used for the etching solution to penetrate from the etching crucible 110 into the bottom of the lifting structure 120 and contact the target substance.

[0056] In some embodiments, the hollow structure 122 can be of various shapes. For example, circular, rectangular, polygonal, etc. In some embodiments, the area of the hollow structure 122 can be smaller than the area of the bottom end face of the lifting structure 120.

[0057] In some embodiments, the position of the hollow structure 122 corresponds to the position of the boss 111. For example, in the vertical direction, the projection of the position of the hollow structure 122 may coincide with the projection of the position of the boss 111.

[0058] In some embodiments, the height difference between the boss 111 and the bottom of the lifting structure 120 is less than a third preset threshold. In some embodiments, the third preset threshold can be less than 5% of the boss height, that is, the height difference between the boss 111 and the bottom of the lifting structure 120 can be less than 5% of the boss height, etc. In some embodiments, the third preset threshold can be 0, that is, the height of the boss 111 can be the same as the height of the bottom of the lifting structure 120. The third preset threshold can be set based on experience or requirements, and this specification does not limit this.

[0059] By setting the bottom of the pulling structure to be a hollow structure, it can be ensured that when the crystal is placed in the pulling structure, the corrosive liquid can penetrate into the bottom of the pulling structure from the corrosion crucible and contact the bonding surface of the crystal and the crystal tray, thereby ensuring that the target substance can contact the corrosive liquid and be corroded; the hollow structure is set to correspond to the position of the boss, and the height difference between the boss and the bottom of the pulling structure is less than the third preset threshold value, so that when the pulling structure and the corrosion crucible are assembled, the hollow structure and the boss can be matched, thereby ensuring that the corrosive liquid can penetrate, and avoiding the corrosive liquid being difficult to flow in and unable to corrode the center of the crystal due to the excessive height difference between the boss and the bottom of the pulling structure.

[0060] In some embodiments, a protrusion 123 may be provided at the bottom of the lifting structure 120. The protrusion 123 refers to a structure protruding from the plane. In some embodiments, the protrusion 123 may be used to contact the surface of the crystal 103. In some embodiments, the contact area of ​​the contact may be less than a first preset threshold. In some embodiments, the first preset threshold may be 5% of the bottom area of ​​the lifting structure, that is, the contact area between the protrusion 123 and the crystal 103 may be less than 5% of the bottom area of ​​the lifting structure, etc. The first preset threshold may be set based on experience or demand, and this specification does not limit this.

[0061] In some embodiments, the protrusion 123 may have different shapes, such as cylindrical, annular, rectangular, irregular, etc.

[0062] In some embodiments, the protrusion 123 may be a ring-shaped structure. In some embodiments, the inner diameter and outer diameter of the ring-shaped structure may be adaptively designed according to the size of the crystal.

[0063] By setting the protrusion to a ring-shaped structure, the crystal can be placed and the contact area between the bottom of the lifting structure and the crystal can be ensured to be small.

[0064] In some embodiments, the height of the etching solution may be higher than the height of the protrusion 123 .

[0065] In some embodiments, the height difference between the height of the etching liquid and the height of the protrusion 123 can meet a preset condition. The preset condition refers to a pre-set condition for limiting the height difference between the height of the etching liquid and the height of the protrusion 123. In some embodiments, the preset condition can be set based on experience or demand. For example, the preset condition can be that the height difference between the height of the etching liquid and the height of the protrusion 123 needs to be less than a preset height difference threshold, and the preset height difference threshold can be set based on experience or demand. The preset condition can also be any condition that can be thought of by a person skilled in the art, and this specification does not limit this.

[0066] By setting the height of the etching liquid higher than the height of the protrusion, it can be ensured that when the crystal is placed in the pulling structure, its bonding surface with the crystal tray can be immersed in the etching liquid, thereby ensuring a good etching separation effect. In addition, the height difference between the height of the etching liquid and the height of the protrusion is set to meet the preset conditions, which can prevent the waste of resources caused by excessive etching liquid in the etching device while ensuring the corrosion effect.

[0067] In some embodiments, Figure 3A As shown, a second handrail structure 126 may be provided on the top of the lifting structure 120. The second handrail structure 126 refers to a member on the lifting structure for people to hold on. In some embodiments, the second handrail structure 126 may be used for users to move the lifting structure during experiments.

[0068] In some embodiments, the second handrail structure 126 can be made of different materials, such as metal materials (such as stainless steel), non-metal materials (such as polypropylene, acrylonitrile-butadiene-styrene copolymer, polytetrafluoroethylene, etc.). In some embodiments, the material of the second handrail structure 126 can be the same as or different from the material of the lifting structure 120.

[0069] In some embodiments, the second handrail structure 126 may have different shapes, such as an annular groove, a semicircular ring, an irregular shape, etc.

[0070] In some embodiments, Figure 3A As shown, the sidewall and / or top of the lifting structure 120 may be provided with a through hole 124. The through hole 124 may refer to a local depression or opening formed on an object, which passes through the thickness of the entire object.

[0071] In some embodiments, the through holes 124 may be one or more, for example, the number of through holes 124 may be two, four or six. In some embodiments, the plurality of through holes 124 may be symmetrically arranged on the lifting structure 120 at equal intervals. For example, four through holes may be symmetrically arranged in pairs on the left and right sides of the second handrail structure 126 on the side wall and / or top of the lifting structure. In some embodiments, the plurality of through holes 124 may correspond one to one with the aforementioned plurality of non-through holes 112. For example, the projection of the four through holes in the vertical direction may overlap with the projection of the aforementioned four non-through holes in the vertical direction.

[0072] In some embodiments, the through hole 124 can be used to assist in fixing the height adjustment device 125 .

[0073] In some embodiments, the through hole 124 can make the permeability of the corrosive liquid greater than the fourth preset threshold. The permeability can refer to the volume of the corrosive liquid entering the lifting structure from the through hole per unit time. For example, the volume of the corrosive liquid entering the lifting structure from the through hole in Amin is Bmm 3, the penetration rate of the etching solution is

[0074] In some embodiments, the fourth preset threshold may be 15 mm 3 / min, that is, the penetration rate of the etching solution may be greater than 15 mm 3 / min. The fourth preset threshold can be set based on experience or requirements, and this specification does not limit it.

[0075] By setting the side wall and / or the top of the lifting structure to have through holes, and the through holes making the penetration rate of the etching solution greater than the fourth preset threshold, it can be ensured that when the crystal is placed in the lifting structure, the etching solution can penetrate from the etching crucible into the interior of the lifting structure, and penetrate a sufficient volume within a certain period of time, avoiding insufficient etching solution caused by too small a penetration rate of the etching solution, resulting in a decrease in the etching efficiency.

[0076] In some embodiments, the lifting structure 120 may include a height adjustment device 125. The height adjustment device 125 may refer to a component capable of adjusting the height. In some embodiments, the height adjustment device 125 may be used to adjust the immersion height of the crystal 103. The immersion height refers to the relevant height information of the crystal 103 immersed in the etching solution. For example, the immersion height of the crystal 103 may be C mm.

[0077] In some embodiments, the height adjustment device 125 may include a nut and a screw. The screw may be used to connect the non-through hole 112 and the through hole 124, and the nut may be sleeved on the screw and used to fix the screw. In some embodiments, the nut may include a first nut and a second nut. The first nut may be sleeved on the part of the screw above the through hole 124, and the second nut may be sleeved on the part of the screw below the through hole 124.

[0078] In some embodiments, a thread structure may be provided inside the through hole 124. The thread structure is the same as the thread on the nut, and both can match the thread on the screw. For example, the thread structure inside the through hole 124 and the thread inside the nut may be internal threads, and the thread on the screw may be an external thread.

[0079] In some embodiments, the immersion height of the crystal 103 can be adjusted by rotating the position of the nut in the height adjustment device 125. By way of example only, the user can connect the through hole 124 on the screw connection lifting structure 120 and the non-through hole 112 on the etching crucible 110. If the user wants to increase the immersion height of the crystal 103, the lifting structure 120 is moved downward in the vertical direction (i.e., making the through hole 124 closer to the non-through hole 112), and the first nut and the second nut are rotated for fixation; if the user wants to decrease the immersion height of the crystal 103, the lifting structure 120 is moved upward in the vertical direction (i.e., making the through hole 124 farther from the non-through hole 112), and the first nut and the second nut are rotated for fixation. In some embodiments, those skilled in the art can also adjust the height adjustment device 125 in other ways to achieve the adjustment of the immersion height of the crystal 103, and this specification does not limit this.

[0080] In some embodiments, in response to the height difference not meeting the preset condition, the user can perform height adjustment through the height adjustment device 125 so that the preset condition is met. For more information about the height difference, the preset condition, and the specific adjustment method, reference can be made to the foregoing relevant content of this specification, which will not be elaborated here.

[0081] By setting the lifting structure to include a height adjustment device, in response to the height difference not meeting the preset condition, height adjustment is performed through the height adjustment device so that the preset condition is met. Based on the actual situation, the immersion height of the crystal in the etching solution can be adjusted in a timely and effective manner, preventing adverse effects such as a decrease in etching efficiency and a deterioration in etching effect caused by too high or too low immersion height.

[0082] By setting the etching device for crystal processing to include an etching crucible and a lifting structure provided on the etching crucible, the etching crucible is used to fill the etching solution, the lifting structure is used to place the crystal, and a protrusion is provided at the bottom of the lifting structure. The protrusion is used to contact the surface of the crystal, and the contact area of the contact is less than the first preset threshold, which can make the contact area between the etching solution and the crystal smaller, and fully contact the volatiles and / or cosolvents at the bonding place between the crystal and the crystal tray and perform etching, flatten the crystal morphology, make the crystal after etching treatment easy to be cut and separated from the crystal tray, avoid crystal cracking and tray damage caused by direct cutting and separation, improve the cutting efficiency, reduce the cutting difficulty, and save the crystal processing cost.

[0083] Figure 4 is an exemplary flowchart of an etching method shown in some embodiments of this specification. In some embodiments, as Figure 4 shown, the etching device 100 is configured to implement the etching method, and the process 400 of the etching method includes the following steps.

[0084] Step 410, filling the etching crucible with the etching solution.

[0085] In some embodiments, a corrosion crucible may be filled with a preset volume of corrosion liquid. The preset volume may be set based on experience or requirements. In some embodiments, the height of the corrosion liquid in the corrosion crucible may be higher than the height of the protrusion of the lifting structure.

[0086] For more information about the corrosion crucible and the corrosion liquid, reference may be made to Figure 1 and its related description.

[0087] Step 420: Place the crystal on the protrusion of the lifting structure.

[0088] In some embodiments, the crystal adhered to the crystal tray may be moved to the lifting structure, and it is ensured that the crystal is located on the protrusion of the lifting structure.

[0089] In some implementations, it may be checked whether the corrosion liquid can penetrate into the space above the lifting structure through the gap between the protrusion of the lifting structure and the boss of the corrosion crucible, so as to ensure that the corrosion liquid fully contacts the target substance; if not, the relative position of the crystal and the protrusion is further adjusted until the corrosion liquid can penetrate into the space above the lifting structure.

[0090] For more information about the protrusion of the lifting structure and the target substance, reference may be made to Figure 1 and its related description.

[0091] Step 430: Perform height adjustment through the height adjustment device so that the height difference between the height of the corrosion liquid and the height of the protrusion meets the preset conditions.

[0092] In some embodiments, a measuring tool or the like may be used to measure the height difference between the height of the corrosion liquid and the height of the protrusion, and the aforementioned height difference is compared with the preset conditions. If the preset conditions are met, no height adjustment is performed; if the preset conditions are not met, height adjustment is performed through the height adjustment device. The measuring tool may include but is not limited to vernier calipers, laser length gauges, etc. For more information about the height adjustment device, the corrosion liquid, the protrusion, the height difference, and the preset conditions, reference may be made to Figure 1 and its related description.

[0093] Merely by way of example, the preset condition is that the height difference between the height of the corrosion liquid and the height of the protrusion needs to be less than the preset height difference threshold Dmm. Using a scale to measure the height difference between the height of the corrosion liquid and the height of the protrusion is D + 5mm, then it is determined that the height difference does not meet the preset conditions. The user can lower the immersion height of the crystal in the corrosion liquid through the height adjustment device, loosen the first nut and the second nut of the height adjustment device, move the lifting structure up 5mm along the screw connection, and then tighten the first nut and the second nut for fixation to complete the height adjustment.

[0094] In some embodiments, when the etching solution contacts the crystal tray above the crystal, the immersion height of the crystal in the etching solution can be reduced by the height adjustment device to prevent the etching solution from contacting the crystal tray.

[0095] Step 440, perform etching based on the etching time.

[0096] The etching time can refer to the time-related data during which the etching is carried out. For example, the etching time can be 12 hours.

[0097] In some embodiments, etching can be performed based on the etching time. For example, based on the etching time of 12 hours, the etching reaction is controlled to proceed for 12 hours. It can be understood that as the etching reaction progresses, the target substance gradually dissolves and flakes off, and the crystal may gradually move downwards. At this time, it is necessary to constantly pay attention to whether the height difference between the height of the etching solution and the height of the protrusion meets the preset conditions. If not, the height is adjusted in a timely manner through the height adjustment device to prevent the etching solution from contacting the crystal tray, etc., and to avoid affecting the smooth progress of the etching process.

[0098] Step 450, cut the crystal and the crystal tray to complete the crystal processing.

[0099] In some embodiments, the etched crystal and the crystal tray can be cut by a crystal cutting device such as a crystal cutter to complete the crystal processing.

[0100] By setting the etching method as filling the etching crucible with the etching solution; placing the crystal on the protrusion of the lifting structure; performing height adjustment through the height adjustment device; performing etching based on the etching time; cutting the crystal and the crystal tray to complete the crystal processing, the volatiles and / or cosolvents at the bonding position between the crystal and the crystal tray can be etched, facilitating the separation of the crystal tray, and avoiding situations such as crystal cracking and tray damage caused by direct cutting, thus realizing the reuse of the crystal tray.

[0101] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only an example and does not constitute a limitation to this specification. Although not explicitly stated here, those skilled in the art may make various modifications, improvements, and corrections to this specification. Such modifications, improvements, and corrections are proposed in this specification, so such modifications, improvements, and corrections still fall within the spirit and scope of the exemplary embodiments of this specification.

[0102] In the meantime, this specification uses specific terms to describe the embodiments of this specification. For example, "an embodiment", "one embodiment", and / or "some embodiments" mean a certain feature, structure, or characteristic related to at least one embodiment of this specification. Therefore, it should be emphasized and noted that the "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more at different positions in this specification does not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of this specification can be appropriately combined.

[0103] In addition, unless clearly stated in the claims, the order of the processing elements and sequences, the use of numerical and alphabetical characters, or the use of other names in this specification are not used to limit the order of the processes and methods in this specification. Although some currently useful invention embodiments are discussed through various examples in the above disclosure, it should be understood that such details only serve the purpose of illustration. The appended claims are not limited to the disclosed embodiments. On the contrary, the claims are intended to cover all modifications and equivalent combinations that conform to the essence and scope of the embodiments of this specification. For example, although the system components described above can be implemented by hardware devices, they can also be implemented only through software solutions, such as installing the described system on existing servers or mobile devices.

[0104] Similarly, it should be noted that, in order to simplify the expression of the disclosure in this specification and thus help the understanding of one or more invention embodiments, in the previous description of the embodiments of this specification, sometimes multiple features are grouped into one embodiment, drawing, or description thereof. However, this disclosure method does not mean that the features required by the subject matter of this specification are more than those mentioned in the claims. In fact, the features of the embodiments are fewer than all the features of the individual embodiments disclosed above.

[0105] In some embodiments, numbers are used to describe the components and the quantity of attributes. It should be understood that such numbers used for the description of embodiments are, in some examples, modified by the modifiers "about", "approximately", or "substantially". Unless otherwise stated, "about", "approximately", or "substantially" indicate that the said numbers allow a variation of ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, and these approximate values can change according to the characteristics required by individual embodiments. In some embodiments, the numerical parameters should consider the specified significant digits and adopt the method of retaining the general number of digits. Although the numerical ranges and parameters used in some embodiments of this specification to confirm the breadth of their ranges are approximate values, in specific embodiments, such numerical settings are as precise as possible within the feasible range.

[0106] For each patent, patent application, patent application publication, and other materials cited in this specification, such as articles, books, specifications, publications, documents, etc., their entire contents are hereby incorporated by reference into this specification. This excludes the application history files that are inconsistent with or conflict with the content of this specification, as well as the files that limit the broadest scope of the claims of this specification (currently or subsequently appended to this specification). It should be noted that if there are any inconsistencies or conflicts between the descriptions, definitions, and / or uses of terms in the supplementary materials of this specification and the content described in this specification, the descriptions, definitions, and / or uses of terms in this specification shall prevail.

[0107] Finally, it should be understood that the embodiments described in this specification are only used to illustrate the principles of the embodiments of this specification. Other variations may also fall within the scope of this specification. Therefore, by way of example and not limitation, alternative configurations of the embodiments of this specification may be considered consistent with the teachings of this specification. Accordingly, the embodiments of this specification are not limited to the embodiments explicitly introduced and described in this specification.

Claims

1. An etching device for crystal processing, characterized in that, The etching device for crystal processing includes an etching crucible and a lifting structure disposed on the etching crucible; The etching crucible is used for filling an etching solution, and the etching solution is used for flattening the crystal morphology and / or etching a target substance, and the target substance includes volatiles and / or a cosolvent at the bonding position between the crystal and the crystal tray; The lifting structure is used for placing the crystal, and a protrusion is provided at the bottom of the lifting structure, and the protrusion is used for contacting the surface of the crystal, and the contact area of the contact is less than a first preset threshold.

2. The etching device according to claim 1, wherein, The height of the etching solution is higher than the height of the protrusion, and the height difference between the height of the etching solution and the height of the protrusion satisfies a preset condition.

3. The etching device according to claim 2, characterized in that, The lifting structure includes a height adjusting device, and in response to the height difference not satisfying the preset condition, height adjustment is performed through the height adjusting device so that the preset condition is satisfied.

4. The etching device according to claim 1, characterized in that The protrusion is a ring structure.

5. The etching device according to claim 1, characterized in that, A boss is provided at the bottom of the etching crucible, and the volume ratio of the boss to the etching crucible is greater than a second preset threshold.

6. The etching device according to claim 5, characterized in that, The bottom of the lifting structure is a hollow structure, and the hollow structure corresponds to the position of the boss, and the height difference between the boss and the bottom is less than a third preset threshold.

7. The etching apparatus according to claim 1, wherein Through holes are provided on the side wall and / or the top of the lifting structure, and the permeability of the etching solution through the through holes is greater than a fourth preset threshold.

8. The etching device according to claim 7, wherein An opening is included on the side of the lifting structure.

9. The etching device according to claim 1, wherein The etching solution is used for injecting into the etching device for etching, and the etching solution is a mixed solution of hydrofluoric acid, nitric acid, and deionized water, and the volume ratio of the hydrofluoric acid, the nitric acid, and the deionized water is 1:1:

1.

10. The etching apparatus according to claim 1, wherein The etching device is configured to implement an etching method, and the etching method includes: Filling an etching solution in the etching crucible; Placing the crystal on the protrusion of the lifting structure; Performing height adjustment through the height adjusting device so that the height difference between the height of the etching solution and the height of the protrusion satisfies a preset condition; Performing the etching based on the etching time; Cutting the crystal and the crystal tray to complete the crystal processing.

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