High-temperature thermal field direct measurement sensor array

Abstract

The invention belongs to the technical field of thermal field measurement in a high-temperature environment, and particularly relates to a high-temperature thermal field direct measurement sensor array. During use, thermal radiation irradiates on a heat absorption layer, and the heat absorption layer absorbs the thermal radiation and transmits the heat to a high-conductivity micro-region, so that transverse thermoelectric voltage is generated between a first electrode and a second electrode; calculating the heat flux density at the high-conductivity micro-region according to the transverse thermoelectric voltage; the temperature of the high-conductivity micro-regions is calculated according to the resistance between the third electrode and the fourth electrode, the heat flux density of the high-conductivity micro-regions is calibrated through the temperature of the high-conductivity micro-regions, and the heat flux and the temperature of the high-conductivity micro-regions are integrated to invert the spatial distribution characteristics of the heat flux. The high-temperature thermal field direct measurement sensor array can output spatial distribution of two modes of heat flux density and temperature, and high-precision spatial distribution measurement of a thermal field is realized.

Description

Technical Field

[0001] The present invention belongs to the technical field of thermal field measurement in high-temperature environments, and particularly relates to a high-temperature thermal field direct measurement sensor array. Background Art

[0002] In fields such as nuclear energy, aerospace, and chemical reaction furnaces, the accurate measurement of local positions of high-temperature thermal fields is of crucial significance for the safe operation of equipment, process optimization, and stable control of product quality.

[0003] Traditional thermal field measurement methods often have many limitations. For example, traditional thermal field measurement mainly uses a single temperature sensor, whose response speed is relatively slow. Traditional single-point temperature measurement technology is difficult to comprehensively reflect the distribution characteristics of the thermal field, and is easily affected by high-temperature environments, resulting in a decrease in measurement accuracy. Moreover, a single temperature sensor cannot distinguish between endothermic / exothermic reactions.

[0004] Another physical quantity characterizing the thermal field is heat flux density. There are certain differences between heat flux density and temperature. Temperature is a scalar, which reflects the result of the action of energy and is difficult to directly reflect the energy transfer process.

[0005] Therefore, a high-temperature thermal field direct measurement sensor array is proposed. Summary of the Invention

[0006] The purpose of the present invention is to provide a high-temperature thermal field direct measurement sensor array to solve the above problems.

[0007] To achieve the above purpose, the present invention provides the following solutions:

[0008] A high-temperature thermal field direct measurement sensor array includes:

[0009] A substrate;

[0010] A plurality of highly conductive micro-regions located inside the substrate and close to the top surface of the substrate. The plurality of highly conductive micro-regions are arranged in an array. First electrodes and second electrodes are respectively provided on opposite sides of each highly conductive micro-region, and both the first electrodes and the second electrodes are located on the top surface of the substrate;

[0011] An endothermic layer laid on the top surface of the substrate. The endothermic layer is located above the highly conductive micro-regions and between the first electrodes and the second electrodes. The endothermic layer is used to absorb thermal radiation. Among them, the absorption of thermal radiation by the endothermic layer causes a thermoelectric effect to occur in the highly conductive micro-regions, the first electrodes, and the second electrodes;

[0012] A plurality of temperature sensor units are arranged on the top surface of the substrate and distributed in an array. The plurality of temperature sensor units are arranged in one-to-one correspondence with the plurality of highly conductive micro-regions. Third electrodes and fourth electrodes are respectively arranged at both ends of the temperature sensor unit, and the temperature sensor unit is used to obtain the temperature at the highly conductive micro-region.

[0013] Preferably, the material of the substrate is a weakly conductive single crystal material.

[0014] Preferably, the thickness of the substrate is 0.1 mm - 10 mm.

[0015] Preferably, the thickness of the highly conductive micro-region ≤ 1000 nm.

[0016] Preferably, the materials of the first electrode and the second electrode are Ni / Pt / Au thin films.

[0017] Preferably, the material of the heat absorption layer is a C composite material.

[0018] Preferably, the material of the temperature sensor unit is a Pt / Ti double-layer thin film.

[0019] Preferably, the materials of the third electrode and the fourth electrode are both Au thin films.

[0020] A measurement method for a high-temperature thermal field direct measurement sensor array, which is used for the high-temperature thermal field direct measurement sensor array, includes the following steps:

[0021] Thermal radiation irradiates on the heat absorption layer. The heat absorption layer absorbs the thermal radiation and transfers the heat to the highly conductive micro-region, causing a transverse thermoelectric voltage to be generated between the first electrode and the second electrode. The heat flux density at the highly conductive micro-region is calculated according to the transverse thermoelectric voltage;

[0022] The temperature at the highly conductive micro-region is calculated according to the resistance between the third electrode and the fourth electrode. The heat flux density at the highly conductive micro-region is calibrated by the temperature at the highly conductive micro-region, and the spatial distribution characteristics of the heat flux are inversely calculated by integrating the heat flux and temperature at multiple highly conductive micro-regions.

[0023] Compared with the prior art, the present invention has the following advantages and technical effects:

[0024] When the present invention is in use, thermal radiation irradiates on the heat absorption layer. The heat absorption layer absorbs the thermal radiation and transfers the heat to the highly conductive micro-region, so as to generate a transverse thermoelectric voltage between the first electrode and the second electrode. The heat flux density at the highly conductive micro-region is calculated according to the transverse thermoelectric voltage; the temperature at the highly conductive micro-region is calculated according to the resistance between the third electrode and the fourth electrode. The heat flux density at the highly conductive micro-region is calibrated by the temperature at the highly conductive micro-region, and the spatial distribution characteristics of the heat flux are inversely deduced by integrating the heat flux and temperature at multiple highly conductive micro-regions.

[0025] The high-temperature thermal field direct measurement sensor array of the present invention can output the spatial distributions of two modes of heat flux density and temperature, and realize the high-precision spatial distribution measurement of the thermal field. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required to be used in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings:

[0027] Figure 1 It is a top view of the present invention;

[0028] Figure 2 is Figure 1 a partial enlarged view of part A in

[0029] Figure 3 It is a cross-sectional view of the highly conductive micro-region in the present invention;

[0030] Figure 4 It is the distribution result of the heat flux density measured by the present invention within a 5x5 mm space range;

[0031] Figure 5 It is the distribution result of the temperature measured by the present invention within a 5x5 mm space range;

[0032] Wherein, 1, substrate; 2, highly conductive micro-region; 3, temperature sensor unit; 4, heat absorption layer; 2a, first electrode; 2b, second electrode; 3a, third electrode; 3b, fourth electrode. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0034] To make the above - mentioned objects, features, and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0035] Refer to Figures 1 to 3 , the present invention discloses a high - temperature thermal field direct - measurement sensor array, including:

[0036] Substrate 1;

[0037] A plurality of highly conductive micro - regions 2, located inside the substrate 1 and close to the top surface of the substrate 1. The plurality of highly conductive micro - regions 2 are arranged in an array. First electrodes 2a and second electrodes 2b are respectively arranged on two opposite sides of the highly conductive micro - region 2. Both the first electrode 2a and the second electrode 2b are located on the top surface of the substrate 1;

[0038] An endothermic layer 4, laid on the top surface of the substrate 1. The endothermic layer 4 is located above the highly conductive micro - region 2 and between the first electrode 2a and the second electrode 2b. The endothermic layer 4 is used to absorb thermal radiation. Among them, the absorption of thermal radiation by the endothermic layer 4 causes a thermoelectric effect in the highly conductive micro - region 2, the first electrode 2a, and the second electrode 2b;

[0039] A plurality of temperature sensor units 3, arranged on the top surface of the substrate 1 and in an array. The plurality of temperature sensor units 3 are arranged in one - to - one correspondence with the plurality of highly conductive micro - regions 2. Third electrodes 3a and fourth electrodes 3b are respectively arranged at both ends of the temperature sensor unit 3. The temperature sensor unit 3 is used to obtain the temperature at the highly conductive micro - region 2.

[0040] In a further optimized solution, the material of the substrate 1 is a weakly conductive single - crystal material.

[0041] Specifically, the material of the substrate 1 is one of 4H - SiC single crystal, 6H - SiC single crystal, and GaN single crystal. The top surface of the substrate 1 is an atom - level polished surface, and the room - temperature resistivity of the substrate 1 is greater than or equal to 1 ohm - centimeter.

[0042] In a further optimized solution, the thickness of the substrate 1 is 0.1 mm - 10 mm.

[0043] In a further optimized solution, the thickness of the highly conductive micro - region 2 is ≤1000 nm.

[0044] A plurality of highly conductive micro - regions 2 are formed by ion implantation combined with a post - annealing process.

[0045] The highly conductive micro - region 2 is set to be rectangular.

[0046] In a further optimized solution, the materials of the first electrode 2a and the second electrode 2b are Ni / Pt / Au thin films.

[0047] For a further optimized solution, the material of the heat absorption layer 4 is a C composite material.

[0048] The thickness of the heat absorption layer 4 is 100 nanometers to 5000 nanometers.

[0049] For a further optimized solution, the material of the temperature sensor unit 3 is a Pt / Ti double-layer thin film.

[0050] The temperature sensor unit 3 is set to be rectangular.

[0051] For a further optimized solution, the materials of the third electrode 3a and the fourth electrode 3b are both Au thin films.

[0052] The thicknesses of the third electrode 3a and the fourth electrode 3b are approximately 200 nanometers.

[0053] A measurement method for a high-temperature thermal field direct measurement sensor array, which is used for the high-temperature thermal field direct measurement sensor array, includes the following steps:

[0054] Thermal radiation irradiates on the heat absorption layer 4, and the heat absorption layer 4 absorbs the thermal radiation and transfers the heat to the high-conductivity micro-region 2, so that a transverse thermoelectric voltage is generated between the first electrode 2a and the second electrode 2b, and the heat flux density at the high-conductivity micro-region 2 is calculated according to the transverse thermoelectric voltage;

[0055] The temperature at the high-conductivity micro-region 2 is calculated according to the resistance between the third electrode 3a and the fourth electrode 3b, and the heat flux density at the high-conductivity micro-region 2 is calibrated through the temperature at the high-conductivity micro-region 2, and the spatial distribution characteristics of the heat flux are inversely calculated by integrating the heat flux and temperature at multiple high-conductivity micro-regions 2.

[0056] Specific working process:

[0057] Thermal radiation irradiates on the heat absorption layer 4, and the heat absorption layer 4 absorbs the thermal radiation and transfers the heat to the high-conductivity micro-region 2, so that a transverse thermoelectric voltage is generated between the first electrode 2a and the second electrode 2b, and the temperature gradient of the high-conductivity micro-region 2 along the thickness direction is calculated according to the transverse thermoelectric voltage. Its calculation formula is:

[0058] U1 = l*(S ab -S c )*▽T*sin(2α) / 2 = l*(S ab -S c )*sin(2α)*ΔT / 2d;

[0059] Wherein, U1 is the transverse thermoelectric voltage, l is the distance between the first electrode 2a and the second electrode 2b, S ab is the Seebeck coefficient in the ab plane of the material in the high-conductivity micro-region 2, S cS is the Seebeck coefficient of the material in the high-conductivity micro-region 2 along the c-axis direction, ▽T is the temperature gradient of the high-conductivity micro-region 2 along the thickness direction, d is the thickness of the single-crystal material of the high-conductivity micro-region 2, f is the thickness of the substrate 1, α is the angle between the c-axis of the substrate 1 and the normal, 0.1° < α < 90°, and ΔT is the temperature difference in the thickness direction of the high-conductivity micro-region 2;

[0060] The heat flux density is calculated according to the temperature gradient of the high-conductivity micro-region 2 along the thickness direction, and its calculation formula is:

[0061] q = -k * ▽T = -k * 2U1 / (l * (S ab -S c ) * sin(2α));

[0062] Among them, q is the heat flux density, k is the thermal conductivity of the material in the high-conductivity micro-region 2, and the heat flux density q is proportional to U1;

[0063] According to the resistance between the third electrode 3a and the fourth electrode 3b, the temperature T corresponding to the temperature sensor unit 3 can be calculated. According to the measured temperatures T, the spatial distribution characteristics of the temperature can be directly measured. At the same time, because the sensitivity P (P = U1 / q) of the high-conductivity micro-region 2 heat flux sensor is closely related to the temperature T, because the increase in temperature will cause changes in the thermal conductivity k, S ab , S c changes occur, and there is a corresponding functional relationship between the sensitivity P and the temperature T. Through the temperature T, the heat flux density of the high-conductivity micro-region 2 corresponding to the temperature sensor unit 3 can also be calibrated, and the heat flux density q at the high-conductivity micro-region 2 can be obtained more accurately.

[0064] A high-temperature thermal field direct measurement device, the high-temperature thermal field direct measurement device includes a high-temperature thermal field direct measurement sensor array, and the high-temperature thermal field direct measurement device further includes: a signal conditioning module, which is signal-connected to the high-temperature thermal field direct measurement sensor array; a data acquisition module, which is signal-connected to the signal conditioning module; a data processing and control module, which is signal-connected to the data acquisition module; a display module, which is signal-connected to the data processing and control module; a storage module, which is signal-connected to the data processing and control module.

[0065] The working principle of the high-temperature thermal field direct measurement device:

[0066] The heat field information is obtained by directly measuring the sensor array through a high - temperature thermal field. Among them, the heat - absorbing layer 4 absorbs thermal radiation and transfers the heat to the high - conductivity micro - region 2, causing a transverse thermoelectric voltage U1 to be generated between the first electrode 2a and the second electrode 2b, and a resistance R1 between the third electrode 3a and the fourth electrode 3b. Then, the transverse thermoelectric voltage U1 and the resistance R1 are transmitted to the signal conditioning module. The signal conditioning module amplifies, filters, linearizes, etc. the signals output by the high - temperature thermal field direct - measurement sensor array to improve the signal quality, and then transmits the signals to the data acquisition module. The data acquisition module converts the analog signals after signal conditioning into digital signals, and performs acquisition and temporary storage. The data processing and control module receives the digital signals acquired by the data acquisition module, analyzes, calculates, and processes the digital signals. According to the preset algorithms and models, the spatial distribution results of the heat flux density and the temperature are obtained, and are stored through the storage module. The spatial distribution results of the heat flux density and the temperature of the heat field are displayed through the display module.

[0067] Refer to Figures 4 to 5 , which are the spatial distribution results of two modes, namely the heat flux density and the temperature, measured by the high - temperature thermal field direct - measurement sensor array of the present invention;

[0068] The high - temperature thermal field direct - measurement sensor array of the present invention can achieve high - precision spatial distribution measurement of the heat field, can simultaneously output the spatial distributions of two modes, namely the heat flux density and the temperature. The size of each unit can be minimized to hundreds of micrometers at least, so as to realize the spatial - resolution heat - field measurement at the micrometer level. It uses high - conductivity materials, and the thicknesses of the high - conductivity micro - region 2 and the temperature - sensor unit 3 are only hundreds of nanometers, with a small heat capacity, so that the device has a fast response, which is conducive to realizing the spatial - resolution measurement of the transient heat field; the size of each unit is relatively small and much smaller than the size of the substrate 1, so that the heat - dissipation effects of the high - conductivity micro - region 2 and the temperature - sensor unit 3 are relatively good, and the spatial - resolution measurement of the steady - state heat field can be realized even without water cooling.

[0069] In the description of the present invention, it should be understood that the orientation or positional relationships indicated by the terms "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationships shown in the drawings, and are only for the convenience of describing the present invention, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be construed as a limitation to the present invention.

[0070] The above - described embodiments are only descriptions of the preferred embodiments of the present invention, and do not limit the scope of the present invention. Without departing from the design spirit of the present invention, various deformations and improvements made by those of ordinary skill in the art to the technical solutions of the present invention should fall within the protection scope determined by the claims of the present invention.

Claims

1. A high-temperature thermal field direct measurement sensor array, characterized in that, Including: Substrate (1); A plurality of highly conductive micro-regions (2), located within the substrate (1) and near the top surface of the substrate (1), the plurality of highly conductive micro-regions (2) being arranged in an array, and a first electrode (2a) and a second electrode (2b) are respectively provided on two opposite sides of the highly conductive micro-region (2), and both the first electrode (2a) and the second electrode (2b) are located on the top surface of the substrate (1); Heat absorption layer (4), laid on the top surface of the substrate (1), the heat absorption layer (4) being located above the highly conductive micro-region (2) and between the first electrode (2a) and the second electrode (2b), the heat absorption layer (4) being used for absorbing thermal radiation, wherein the highly conductive micro-region (2), the first electrode (2a), and the second electrode (2b) generate a thermoelectric effect by absorbing thermal radiation through the heat absorption layer (4); A plurality of temperature sensor units (3), arranged on the top surface of the substrate (1) in an array, the plurality of temperature sensor units (3) being provided in one-to-one correspondence with the plurality of highly conductive micro-regions (2), and a third electrode (3a) and a fourth electrode (3b) are respectively provided at two ends of the temperature sensor unit (3), and the temperature sensor unit (3) is used for obtaining the temperature at the highly conductive micro-region (2).

2. The direct measurement sensor array for high-temperature thermal field according to claim 1, wherein: The material of the substrate (1) is a weakly conductive single crystal material.

3. The direct measurement sensor array for high-temperature thermal field according to claim 1, wherein: The thickness of the substrate (1) is 0.1 mm - 10 mm.

4. A direct measurement sensor array for high-temperature thermal field according to claim 1, characterized in that: The thickness of the highly conductive micro-region (2) ≤ 1000 nm.

5. The direct measurement sensor array for high-temperature thermal field according to claim 1, wherein: The materials of the first electrode (2a) and the second electrode (2b) are Ni / Pt / Au thin films.

6. The direct measurement sensor array for high-temperature thermal field according to claim 1, characterized in that: The material of the heat absorption layer (4) is a C composite material.

7. The direct measurement sensor array for high-temperature thermal field according to claim 1, wherein: The material of the temperature sensor unit (3) is a Pt / Ti double-layer thin film.

8. The direct measurement sensor array for high-temperature thermal field according to claim 1, characterized in that: The materials of the third electrode (3a) and the fourth electrode (3b) are both Au thin films.

9. A measurement method for a high-temperature thermal field direct measurement sensor array, which is used for the high-temperature thermal field direct measurement sensor array according to any one of claims 1-8, characterized in that, Including the following steps: Thermal radiation irradiates on the heat absorption layer (4), the heat absorption layer (4) absorbs the thermal radiation and transfers the heat to the highly conductive micro-region (2), so that a transverse thermoelectric voltage is generated between the first electrode (2a) and the second electrode (2b), and the heat flux density at the highly conductive micro-region (2) is calculated according to the transverse thermoelectric voltage; The temperature at the highly conductive micro-region (2) is calculated according to the resistance between the third electrode (3a) and the fourth electrode (3b), the heat flux density at the highly conductive micro-region (2) is calibrated by the temperature at the highly conductive micro-region (2), and the spatial distribution characteristics of the heat flux are inversely deduced by integrating the heat flux and temperature at the plurality of highly conductive micro-regions (2).

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