Reinput method and system, electronic equipment and computer readable storage medium

Abstract

The invention provides a re-feeding method and system, electronic equipment and a computer readable storage medium, a plurality of single crystal furnaces are communicated with centralized control equipment, the centralized control equipment receives re-feeding information of each single crystal furnace, and when any single crystal furnace needs to be re-fed, the re-feeding method comprises the following steps: acquiring a solid-liquid area ratio of a silicon material to a silicon melt in the single crystal furnace; crystal pulling key parameters are adjusted according to the solid-liquid area ratio; judging whether a re-throwing condition is met or not, and if yes, transmitting a re-throwing picture of the single crystal furnace table needing to be re-thrown to the centralized control equipment; the centralized control equipment displays a re-casting picture of the single crystal furnace table needing re-casting and controls the single crystal furnace table needing re-casting to carry out re-casting; the steps are repeated, the single crystal furnace table needing to be re-put is re-put for multiple times, centralized control personnel can control automatic re-putting of all the single crystal furnace tables in a centralized mode, automation and intelligence of re-putting are achieved, the functions of automatically detecting the melt state, automatically controlling parameters such as the position of an isolating valve and the position of a crucible, achieving multi-picture and intelligent sequencing and the like are achieved, and one person can control multiple single crystal furnaces. The production efficiency is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of single crystal silicon, and in particular relates to a recharging method and system, an electronic device, and a computer-readable storage medium. Background Art

[0002] With the rapid development of the photovoltaic industry, the photovoltaic manufacturing industry has simultaneously promoted the production concepts of automation, intelligence, and high efficiency, continuously reshaping the new scene of photovoltaic factories, and pioneering the layout of the world's leading industrial 4.0 intelligent factories, improving the man-machine ratio through a centralized control system and enhancing production efficiency.

[0003] Currently, it has been realized that a single person can operate more than 200 single crystal furnaces. The main process flow of single crystal pulling includes: initialization, evacuation, leak detection, pressurization, melting of materials, recharging, slag sticking / volatilization, welding, seeding, shoulder release, shoulder turning, equal diameter, tailing, section taking, cyclic recharging ···, furnace shutdown. The existing centralized control mode has reached the operation limit of personnel. To further improve the man-machine ratio through centralized control, it is necessary to further upgrade and optimize the process, develop a new centralized control mode, and break through the existing operation limit.

[0004] In the existing process, the recharging process takes a long time for the operation of the centralized control personnel. Currently, the single furnace operation takes about 400 - 500h, among which the number of recharges reaches 5 - 6 times, the number of recharging cylinders per single recharge is about 6 cylinders, and more than 30 cylinders need to be recharged for a single furnace. The centralized control personnel need to judge whether to perform the next cylinder recharge by observing the melting situation of each cylinder after recharging. When a single person operates 192 devices, during the concentrated recharging period, working hours will be wasted due to untimely manual observation. Summary of the Invention

[0005] In view of the above problems, the present invention provides a recharging method and system, an electronic device, and a computer-readable storage medium to solve the above or other previous problems existing in the prior art.

[0006] To solve the above technical problems, the technical solution adopted by the present invention is: A recharging method, in which multiple single crystal furnace platforms communicate with a centralized control device, and the centralized control device receives the recharging information of each single crystal furnace platform. When any single crystal furnace platform needs to be recharged, it includes:

[0007] Obtain the solid-liquid area ratio of the silicon material and silicon melt in the single crystal furnace;

[0008] Adjust the key crystal pulling parameters according to the solid-liquid area ratio;

[0009] Judge whether the recharging condition is met. If so, transmit the recharging screen of the single crystal furnace platform that needs to be recharged to the centralized control device;

[0010] The centralized control device displays the recharging screen of the single crystal furnace platform that needs to be recharged and controls the single crystal furnace platform that needs to be recharged to perform recharging;

[0011] Repeat the above steps and need to re-feed the single crystal furnace platform for multiple re-feedings.

[0012] Furthermore, determining whether the re-feeding condition is met includes:

[0013] Determine whether the solid-liquid area ratio of the silicon material and the silicon melt in the single crystal furnace reaches the preset area ratio. If so, determine whether the key crystal pulling parameters reach the preset parameters. If so, perform re-feeding information transmission.

[0014] Furthermore, the key crystal pulling parameters include crucible rotation, crucible position, furnace pressure, inert gas flow rate, main heater power, bottom heater power, and deflector height.

[0015] Furthermore, the centralized control device receives the re-feeding pictures of multiple single crystal furnace platforms, sorts the re-feeding pictures of each single crystal furnace platform, and conducts centralized collection and management of the re-feeding of each single crystal furnace platform.

[0016] Furthermore, when sorting the re-feeding pictures of each single crystal furnace platform, the sorting order is as follows: the picture of the re-feeding cylinder being open and in the state of feeding, the picture of the re-feeding cylinder being in the state of ready to open, the picture of the re-feeding cylinder being in the state of unable to open, and the picture of the re-feeding cylinder being in the state of completing re-feeding.

[0017] Furthermore, if the single crystal furnace platform that needs to be re-fed does not meet the re-feeding condition, an alarm is given and abnormal signal processing is performed.

[0018] Furthermore, before obtaining the solid-liquid area ratio of the silicon material and the silicon melt in the single crystal furnace, it also includes:

[0019] Suspend the re-feeding cylinder and determine whether the secondary chamber rotates back. If so, perform secondary chamber purification.

[0020] Furthermore, when the centralized control device controls the single crystal furnace platform that needs to be re-fed to perform the re-feeding steps, the single crystal furnace platform that needs to be re-fed executes an automatic re-feeding process.

[0021] A re-feeding system includes a centralized control device and multiple single crystal furnace platforms. The multiple single crystal furnace platforms are all connected to the centralized control device for re-feeding signal transmission. The centralized control device is configured to:

[0022] Receive the re-feeding signals of each single crystal furnace platform;

[0023] Determine whether each single crystal furnace platform meets the re-feeding condition;

[0024] Receive the re-feeding pictures of each single crystal furnace platform and sort the re-feeding pictures of each single crystal furnace platform;

[0025] Control each single crystal furnace platform to perform re-feeding.

[0026] Furthermore, the single crystal furnace platform is configured to: when re-feeding is required, obtain the solid-liquid area ratio of the silicon material and the silicon melt in the single crystal furnace;

[0027] Adjust the key parameters of crystal pulling according to the solid-liquid area ratio;

[0028] Transmit the recharging signal to the centralized control device;

[0029] Receive the recharging information from the centralized control device;

[0030] Perform automatic recharging.

[0031] An electronic device includes a memory, a processor, and a computer program stored on the memory and executable on the processor. When the processor executes the program, the above method is implemented.

[0032] A computer-readable storage medium stores a computer program, and when the program is executed by a processor, the above method is implemented.

[0033] Due to the above technical solution, multiple single crystal furnace platforms are respectively connected to the centralized control device. Any single crystal furnace platform performs the crystal pulling process to draw single crystals. When any single crystal furnace platform needs to be recharged, the solid-liquid area ratio of the silicon material and the silicon melt in the quartz crucible is obtained, and the key parameters of crystal pulling are adjusted according to the solid-liquid area ratio, and the obtained recharging information is transmitted to the centralized control device. The centralized control device judges whether the recharging condition is satisfied. If so, the centralized control device automatically jumps to the page to display the recharging screen of the single crystal furnace platform that needs to be recharged, and the centralized control device controls the single crystal furnace platform that needs to be recharged to perform automatic recharging. The centralized control device receives the recharging screens of each single crystal furnace platform and performs intelligent sorting and centralized collection management, realizing that the centralized control personnel centrally control the automatic recharging of each single crystal furnace platform, significantly improving the efficiency, realizing the automation and intelligence of recharging, realizing the automatic detection of the molten material state, automatically controlling parameters such as the isolation valve and the crucible position, the centralized control device realizes functions such as multiple screens and intelligent sorting, realizing one person controlling multiple single crystal furnaces, effectively improving the man-machine ratio, and improving the production efficiency. Brief Description of the Drawings

[0034] Figure 1 It is a schematic structural diagram of the recharging system according to an embodiment of the present invention;

[0035] Figure 2 It is a logical flowchart of the recharging method according to an embodiment of the present invention.

[0036] In the figure:

[0037] 1. Single crystal furnace platform 2. Centralized control device Detailed Embodiments

[0038] The present invention will be further described below with reference to the drawings and specific embodiments.

[0039] Figure 1The structural schematic diagram of an embodiment of the present invention is shown. This embodiment relates to a recharging method and system, an electronic device, and a computer-readable storage medium. Multiple single crystal furnaces are all connected to a centralized control device and perform recharging information transmission. When any single crystal furnace meets the recharging conditions, the centralized control device displays the recharging screen of that single crystal furnace and controls the single crystal furnace to be recharged to perform recharging. The centralized control device sorts the recharging screens of multiple single crystal furnaces, realizes functions such as automatically detecting the state of the molten material, automatically controlling parameters such as the isolation chamber and the crucible position, and realizes functions such as multiple screens and intelligent sorting, enabling one person to control multiple single crystal furnaces and improving production efficiency.

[0040] A recharging method, as Figure 1 and 2 shown, is applied to the single crystal pulling process of multiple single crystal furnace platforms. The centralized control device controls each single crystal furnace platform to perform automatic recharging. In a single crystal production workshop, multiple single crystal furnace platforms simultaneously perform single crystal pulling (the number of single crystal furnace platforms can be greater than 600). To understand the working conditions of each single crystal furnace platform, a centralized control device is set up, such as a centralized control center. Each single crystal furnace platform is connected to the centralized control device, and each single crystal furnace platform transmits information to the centralized control device. The centralized control device receives the information sent by each single crystal furnace platform and real-time displays the real-time status of each single crystal furnace platform, such as: the state of the silicon material in the quartz crucible, the state of the silicon melt, the single crystal pulling state, etc., enabling an operator to simultaneously monitor the working states of multiple single crystal furnaces and make timely feedback when abnormalities occur during the single crystal pulling process. During the single crystal pulling process, when performing recharging, it is necessary to observe the melting situation after recharging and judge whether to perform the next barrel of recharging. Therefore, it is necessary to combine each single crystal furnace platform with the centralized control device. The centralized control device receives the recharging screen of any single crystal furnace platform to be recharged and controls the single crystal furnace platform to be recharged to perform automatic recharging, enabling the operator to observe and monitor the recharging situation of each single crystal furnace platform at the centralized control device, improving the recharging efficiency and production efficiency.

[0041] Specifically, a recharging method, as Figure 1 and 2 shown, multiple single crystal furnace platforms 1 communicate with a centralized control device 2. The centralized control device 2 receives the recharging information of each single crystal furnace platform 1. When any single crystal furnace platform 1 needs to be recharged, it includes:

[0042] Obtaining the solid-liquid area ratio of the silicon material and the silicon melt in the single crystal furnace. This step includes:

[0043] Obtain the area of the silicon material block and the area of the silicon melt in the single crystal furnace: In each single crystal furnace crystal pulling system, a CCD camera is provided. The CCD camera takes pictures of the silicon material block and the silicon melt in the quartz crucible to obtain pictures of the silicon material block and the silicon melt in the quartz crucible. Each single crystal furnace platform 1 is equipped with a control device. The control device receives the picture, performs image processing on the picture, and calculates the solid area of the silicon material block and the liquid area of the silicon melt in the quartz crucible;

[0044] Calculate the solid-liquid area ratio of the silicon material area and the silicon melt area in the single crystal furnace: According to the area of the silicon material and the area of the silicon melt obtained in the above steps, calculate the solid-liquid area ratio. The solid-liquid area ratio = silicon material area ratio / silicon melt area ratio. According to the actually obtained area of the silicon material and the area of the silicon melt in the quartz crucible, the actual solid-liquid area ratio of the silicon material area and the silicon melt area in the single crystal furnace can be obtained.

[0045] Adjust the key crystal pulling parameters according to the solid-liquid area ratio: In this step, the control device of each single crystal furnace platform 1 detects the key crystal pulling parameters in real time. The control device in each single crystal furnace platform 1 is configured as follows: There are multiple solid-liquid area ratios set, and each solid-liquid area ratio corresponds to a set of key crystal pulling parameters. Therefore, according to the actually calculated solid-liquid area ratio, adjust the key crystal pulling parameters, and adjust a set of key crystal pulling parameters to the value of the key crystal pulling parameters corresponding to this actual solid-liquid area ratio.

[0046] The above key crystal pulling parameters include crucible rotation, crucible position, furnace pressure, inert gas flow rate, main heater power, bottom heater power, and deflector height.

[0047] After the adjustment of the key crystal pulling parameters is completed, the single crystal furnace platform 1 to be recharged transmits a recharge signal to the centralized control device. The centralized control device analyzes the recharge signal to determine whether the recharge condition is met. If so, transmits the recharge screen of the single crystal furnace platform 1 to be recharged to the centralized control device 2 and displays it: This step includes:

[0048] Judge whether the solid-liquid area ratio of the silicon material and the silicon melt in the single crystal furnace reaches the preset area ratio value. If so, judge whether the key crystal pulling parameters reach the preset parameter value. If so, perform the recharge information transmission; if the solid-liquid area ratio of the silicon material block and the silicon melt in the single crystal furnace does not reach the preset area ratio value, repeat the above steps to continue obtaining the solid-liquid area ratio of the silicon material block and the silicon melt in the single crystal furnace until the solid-liquid area ratio of the silicon material block and the silicon melt in the single crystal furnace reaches the preset area ratio value, and then perform the next judgment on whether the key crystal pulling parameters reach the preset parameter value; if the key crystal pulling parameters do not reach the preset parameter value, the control device controls the single crystal furnace system to act, adjusts the key crystal pulling parameters, adjusts the key crystal pulling parameters to the preset parameter value, and then performs the recharge information transmission.

[0049] Specifically, the crystal pulling system of the single crystal furnace automatically detects the actual crucible rotation parameter value. When the detected actual crucible rotation parameter value does not reach the preset value of the crucible rotation parameter, it automatically adjusts the crucible rotation parameter. The control device controls the rotation speed of the quartz crucible so that the crucible rotation parameter reaches the preset value of the crucible rotation parameter;

[0050] The crystal pulling system of the single crystal furnace automatically detects the actual crucible position parameter value. When the detected actual crucible position parameter value does not reach the preset value of the crucible position parameter, it automatically adjusts the crucible position parameter. The control device controls the distance between the upper edge of the quartz crucible and the lower edge of the guide cylinder so that the crucible position parameter reaches the preset value of the crucible position parameter;

[0051] The crystal pulling system of the single crystal furnace automatically detects the actual furnace pressure parameter value of the single crystal furnace. When the detected actual furnace pressure parameter value does not reach the preset value of the furnace pressure parameter, it automatically adjusts the furnace pressure parameter. The control device controls the flow rate of the inert gas entering the single crystal furnace and controls the change of the furnace pressure of the single crystal furnace so that the furnace pressure parameter reaches the preset value of the furnace pressure parameter;

[0052] The crystal pulling system of the single crystal furnace automatically detects the actual inert gas flow rate parameter value. When the detected actual inert gas flow rate parameter value does not reach the preset value of the inert gas flow rate parameter, it automatically adjusts the inert gas flow rate parameter. The control device controls the opening degree of the valve on the inert gas inlet pipe so that the inert gas flow rate parameter reaches the preset value of the inert gas flow rate parameter;

[0053] The crystal pulling system of the single crystal furnace automatically detects the actual main heater power parameter value. When the detected actual main heater power parameter value does not reach the preset value of the main heater power parameter, it automatically adjusts the main heater power parameter. The control device controls the voltage and / or current of the main heater so that the main heater power parameter reaches the preset value of the main heater power parameter;

[0054] The crystal pulling system of the single crystal furnace automatically detects the actual bottom heater power parameter value. When the detected actual bottom heater power parameter value does not reach the preset value of the bottom heater power parameter, it automatically adjusts the bottom heater power parameter. The control device controls the voltage and / or current of the bottom heater so that the bottom heater power parameter reaches the preset value of the bottom heater power parameter;

[0055] The crystal pulling system of the single crystal furnace automatically detects the actual descending height parameter value of the guide cylinder. When the detected actual descending height parameter value of the guide cylinder does not reach the preset value of the descending height parameter of the guide cylinder, it automatically adjusts the descending height of the guide cylinder. The control device controls the lifting device of the guide cylinder to act so that the descending height of the guide cylinder reaches the preset value of the descending height parameter of the guide cylinder.

[0056] After the key parameters for crystal pulling are adjusted, the single crystal furnace platform 1 transmits the recharging signal to the centralized control device 2. The centralized control device 2 receives the recharging signal, determines that the single crystal furnace platform to be recharged meets the recharging conditions based on the recharging signal, and automatically jumps to the page to display the real-time recharging screen of the single crystal furnace platform 1. The recharging screen includes the screen inside the quartz crucible and the screen of the recharging cylinder, displays the states of the silicon material and the silicon melt inside the quartz crucible, and simultaneously displays the situation inside the recharging cylinder.

[0057] In the above step of determining whether the solid-liquid area ratio of the silicon material blocks and the silicon melt in the single crystal furnace reaches the preset area value, it includes:

[0058] Compare the solid-liquid area ratio with the preset area ratio value to determine whether the solid-liquid area ratio of the silicon material blocks and the silicon melt in the single crystal furnace reaches the preset area value.

[0059] If the single crystal furnace platform 1 to be recharged does not meet the recharging conditions, an alarm is issued and abnormal signal processing is performed. Here, the abnormal signal processing includes the adjustment processing when the area ratio of the silicon material and the silicon melt in the above quartz crucible does not reach the preset area value and the adjustment processing when one or more crystal pulling parameters in a set of key crystal pulling parameters do not reach the preset parameter values. The operator makes manual or automatic adjustments.

[0060] The centralized control device 2 displays the recharging screen inside the single crystal furnace platform 1 to be recharged and controls the single crystal furnace platform 1 to be recharged to perform recharging. Among them, the centralized control device 2 simultaneously receives the recharging screens of multiple single crystal furnace platforms 1, sorts the recharging screens of each single crystal furnace platform 1, and centrally manages and collects the rechargings of each single crystal furnace platform 1. When any single crystal furnace platform 1 meets the recharging conditions, the single crystal furnace platform 1 transmits the signal to the centralized control device 2. The centralized control device 2 receives the signal and displays the real-time recharging screen of the single crystal furnace platform 1.

[0061] The centralized control device 2 receives the images of all single crystal furnace platforms 1, sorts the recharging images of each single crystal furnace platform 1. When sorting, the sorting order is as follows: the image of the recharging cylinder in the open state and in the process of feeding material, the image of the recharging cylinder in the ready-to-open state, the image of the recharging cylinder in the non-openable state, and the image of the recharging cylinder in the state of completing recharging. The basis for this sorting is the importance degree of the recharging situation of the furnace platform. The operator pays priority attention to the image of the recharging cylinder in the open state and in the process of feeding material, so that the operator can understand and monitor the recharging situation of the single crystal furnace platform 1 in real time. The operator secondly pays attention to the image of the recharging cylinder in the ready-to-open state, so that the operator can understand and monitor the opening state of the recharging cylinder of the single crystal furnace platform 1 in real time. Furthermore, the operator pays attention to the image of the recharging cylinder in the non-openable state, so that the operator can understand and monitor the state when the recharging cylinder enters the main chamber of the single crystal furnace in real time. Finally, the operator pays attention to the image of the recharging cylinder in the state of completing recharging, so that the operator can understand and monitor the recharging process of the single crystal furnace platform 1 in real time and understand and monitor whether the recharging is completed.

[0062] When multiple single crystal furnace platforms 1 are in the same state image, they are arranged according to the single crystal furnace platforms 1. For example, when seven single crystal furnace platforms 1 are all in the image of the recharging cylinder in the open state and in the process of feeding material, the seven single crystal furnace platforms include: No. 1 single crystal furnace platform, No. 3 single crystal furnace platform, No. 5 single crystal furnace platform, No. 6 single crystal furnace platform, No. 8 single crystal furnace platform, No. 9 single crystal furnace platform, and No. 10 single crystal furnace platform. Then, the recharging images of these seven single crystal furnace platforms are displayed at the centralized control device 2 in the order of No. 1 single crystal furnace platform, No. 3 single crystal furnace platform, No. 5 single crystal furnace platform, No. 6 single crystal furnace platform, No. 8 single crystal furnace platform, No. 9 single crystal furnace platform, and No. 10 single crystal furnace platform in sequence.

[0063] In the process of the centralized control device 2 controlling the single crystal furnace platform 1 to be recharged to perform the recharging steps, the single crystal furnace platform 1 to be recharged executes the automatic recharging process. The centralized control device 2 sends an automatic recharging signal to the single crystal furnace platform 1 to be recharged. An automatic recharging process is preset in the control device of each single crystal furnace platform 1, and the single crystal furnace platform 1 to be recharged executes the automatic recharging process according to the received recharging signal.

[0064] The automatic recharging process includes the following steps:

[0065] Lower the recharging cylinder. The recharging cylinder descends to the first position. The first position is at a first preset distance from the zero position of the deflector cylinder. The specific value of the first preset distance is selected and set according to the actual crystal pulling process requirements; the above-mentioned first position is selected according to the diameter size of the deflector cylinder, and different sizes of deflector cylinders correspond to different first positions. The zero position of the deflector cylinder is set according to the process requirements in the actual crystal pulling process of the single crystal furnace.

[0066] The weight unloading of the recharging cylinder: In the weight unloading step of the recharging cylinder, it is judged whether the recharging cylinder is in contact with the isolation chamber. If so, the weight unloading of the recharging cylinder is completed; otherwise, the recharging cylinder continues to descend until it is in contact with the isolation chamber, and the weight unloading of the recharging cylinder is completed. Judging whether the recharging cylinder is in contact with the isolation chamber is based on whether the pressure detection device on the isolation chamber detects a pressure change. When the pressure detection device on the isolation chamber detects a pressure change, the recharging cylinder is in contact with the isolation chamber. This pressure detection device is a pressure sensor, and this pressure detection device is installed on the isolation chamber. When the recharging cylinder is in contact with the isolation chamber, the pressure sensor can detect the pressure of the recharging cylinder on the isolation chamber. When the pressure detection device detects a pressure change, it means that the recharging cylinder has been placed on the isolation chamber and the recharging cylinder is supported by the isolation chamber, thereby completing the automatic weight unloading of the recharging cylinder.

[0067] The recharging cylinder for feeding: When the recharging cylinder is for feeding, multiple stage feedings are carried out in sequence until the recharging of the silicon material in the recharging cylinder is completed; after the automatic weight unloading of the recharging cylinder, the quartz umbrella on the recharging cylinder descends for automatic feeding. During the descent of the quartz umbrella, the quartz umbrella descends step by step in stages, and the recharging of the silicon material is carried out step by step in stages to avoid damage to the quartz crucible due to excessive feeding of the silicon material and too little silicon melt in the quartz crucible; among them, in each stage of feeding, the quartz umbrella of the recharging cylinder descends a first height, and the feeding time is the first time. That is, in each stage of the descent of the quartz umbrella, the quartz umbrella descends a first height and descends for the first time. Here, the first height is 10 - 40 mm, and the first time is 1 - 3 min. The first height and the first time are selected according to the size of the recharging cylinder, and no specific requirements are made here. During the process of the quartz umbrella descending in multiple stages, the total descent time does not exceed 10 min.

[0068] Lift the recharging cylinder and take it out: After the automatic feeding is completed, lift the recharging cylinder. The recharging cylinder is lifted to the position before descent, close the isolation chamber, unscrew the auxiliary chamber, and take out the recharging cylinder.

[0069] Before obtaining the solid - liquid area ratio of the silicon material block and the silicon melt in the single - crystal furnace, it also includes:

[0070] Suspend the recharging cylinder and judge whether the auxiliary chamber rotates back. If so, perform purification of the auxiliary chamber.

[0071] When the single - crystal furnace platform 1 needs recharging, first suspend the recharging cylinder. The recharging cylinder is filled with silicon material. The recharging cylinder is suspended in the auxiliary chamber of the single - crystal furnace through a suspension device in the auxiliary chamber. This suspension device can be a steel wire rope. The suspension of the recharging cylinder can be carried out manually or the recharging cylinder is automatically suspended through corresponding equipment, and it is selected according to the actual structure of the single - crystal furnace platform 1, and no specific requirements are made here.

[0072] After the refeeding cylinder filled with silicon material is suspended behind the secondary chamber of the single crystal furnace, the secondary chamber needs to rotate. A weight detection device is provided on the secondary chamber. The weight detection device detects whether there is a change in weight of the suspension device. If there is, the secondary chamber operates, rotates, and closes. Otherwise, the secondary chamber does not operate and does not rotate, realizing the automatic rotation of the secondary chamber. The weight detection device is a weight sensor.

[0073] During the rotation of the secondary chamber, it is judged whether the secondary chamber rotates, including: judging whether the single crystal furnace platform 1 to be refed has received the position information of the secondary chamber. If so, the secondary chamber has rotated. Otherwise, the secondary chamber has not rotated. The position information of the secondary chamber is detected by a position detection device, and the position detection device is a position sensor or a limit sensor.

[0074] Before the secondary chamber rotates, the refeeding cylinder is lifted to the second position inside the secondary chamber so that the secondary chamber can rotate smoothly. The second position is at a second preset distance from the zero position of the guide cylinder. The specific value of the second preset distance is selected and set according to the actual crystal pulling process requirements; the above-mentioned second position is selected according to the diameter size of the guide cylinder, and different sizes of the guide cylinder correspond to different second positions. The zero position of the guide cylinder is set according to the process requirements during the actual crystal pulling process of the single crystal furnace.

[0075] After the secondary chamber rotates, the secondary chamber is purified. An inert gas is introduced into the single crystal furnace, and it is judged whether the pressure difference between the pressure of the secondary chamber and the pressure of the main chamber reaches the preset pressure difference value. If so, the purification of the secondary chamber is completed. After the secondary chamber rotates, the isolation chamber is opened, and an inert gas is introduced for purification of the secondary chamber to discharge the air and other impurities in the secondary chamber and the single crystal furnace, ensuring the purification space in the single crystal furnace to ensure the crystal pulling quality of the single crystal. The inert gas can be argon. Control the flow rate of the inert gas introduced. During the introduction of the inert gas, the pressure of the secondary chamber of the single crystal furnace and the pressure of the main chamber of the single crystal furnace are detected in real time, calculate the pressure difference between the pressure in the main chamber of the single crystal furnace and the pressure in the secondary chamber, and judge whether the pressure difference between the pressure in the main chamber of the single crystal furnace and the pressure in the secondary chamber reaches the preset pressure difference value. If so, the purification of the secondary chamber is completed. Otherwise, continue to introduce the inert gas and continuously purify the secondary chamber until the pressure difference between the pressure in the main chamber of the single crystal furnace and the pressure in the secondary chamber reaches the preset pressure difference value, completing the purification of the secondary chamber. The preset pressure difference value is 3 - 8 torr, which is selected according to actual needs and no specific requirements are made here.

[0076] Repeat the above steps. The single crystal furnace platform 1 to be refed performs multiple refeedings to perform the refeeding of multiple cylinders of silicon material. After the refeeding is completed, it enters the next program.

[0077] A refeeding system includes a centralized control device 2 and multiple single crystal furnace platforms 1. Multiple single crystal furnace platforms 1 are all connected to the centralized control device 2 for refeeding signal transmission. The connection method can be wired connection through cables, etc., or wireless connection;

[0078] The centralized control device 2 is configured to:

[0079] Receive the re-injection signals of each single crystal furnace platform 1, and determine whether each single crystal furnace platform meets the re-injection conditions;

[0080] Receive the re-injection screens of each single crystal furnace platform 1 that meets the re-injection conditions, display the re-injection screens of each single crystal furnace platform 1, and sort the re-injection screens of each single crystal furnace platform 1;

[0081] Control each single crystal furnace platform 1 to perform re-injection.

[0082] Any one of the single crystal furnace platforms 1 is configured to: When any one of the single crystal furnace platforms 1 needs to be re-injected, perform the following steps:

[0083] Obtain the solid-liquid area ratio of the silicon material blocks and the silicon melt in the single crystal furnace;

[0084] Adjust the key crystal pulling parameters according to the solid-liquid area ratio;

[0085] Transmit the re-injection signal to the centralized control device 2;

[0086] Receive the re-injection information sent by the centralized control device 2 and perform automatic re-injection.

[0087] An electronic device includes a memory, a processor, and a computer program stored on the memory and executable on the processor. When the processor executes the program, the above method is implemented, and it can be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented using a software program, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer execution instructions. When the computer execution instructions are loaded and executed on a computer, the processes or functions according to the above method are generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer execution instructions can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer execution instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center in a wired manner (such as coaxial cable, optical fiber, digital subscriber line (DSL)) or a wireless manner (such as infrared, wireless, microwave, etc.).

[0088] A computer-readable storage medium stores a computer program thereon, and when the program is executed by a processor, the above-mentioned method is implemented. The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server or a data center that includes one or more media that can be integrated. The available medium can be a magnetic medium (e.g., a floppy disk, a hard disk, a magnetic tape), an optical medium (e.g., a DVD), or a semiconductor medium (e.g., a solid state disk (SSD)), etc.

[0089] Due to the adoption of the above technical solution, multiple single crystal furnace platforms are respectively connected to the centralized control device. Any single crystal furnace platform performs the crystal pulling process to pull a single crystal. When any single crystal furnace platform needs to be recharged, the solid-liquid area ratio of the silicon material and the silicon melt in the quartz crucible is obtained, and the key crystal pulling parameters are adjusted according to the solid-liquid area ratio, and the obtained recharging information is transmitted to the centralized control device. The centralized control device judges whether the recharging condition is met. If it is met, the centralized control device automatically jumps to the page to display the recharging screen of the single crystal furnace platform that needs to be recharged, and the centralized control device controls the single crystal furnace platform that needs to be recharged to perform automatic recharging. The centralized control device receives the recharging screens of each single crystal furnace platform, performs intelligent sorting, and centrally collects and manages them, realizing that the centralized control personnel centrally control the automatic recharging of each single crystal furnace platform, significantly improving the efficiency, realizing the automation and intelligence of recharging, realizing the automatic detection of the molten material state, and automatically controlling parameters such as the isolation valve and the crucible position. The centralized control device realizes functions such as multiple screens and intelligent sorting, realizing one person controlling multiple furnaces, effectively improving the man-machine ratio, and improving the production efficiency.

[0090] The above has described the embodiments of the present invention in detail, but the content described is only the preferred embodiments of the present invention and cannot be considered as limiting the scope of implementation of the present invention. All equivalent changes and improvements made according to the scope of the application of the present invention shall still fall within the scope covered by the patent of the present invention.

Claims

1. A method for re-investment, characterized in that: Multiple single crystal furnace platforms are all in communication with the centralized control device. The centralized control device receives the recharging information of each single crystal furnace platform. When any single crystal furnace platform needs to be recharged, it includes: Obtain the solid-liquid area ratio of the silicon material and the silicon melt in the single crystal furnace; Adjust the key crystal pulling parameters according to the solid-liquid area ratio; Judge whether the recharging condition is met. If so, transmit the recharging screen of the single crystal furnace platform that needs to be recharged to the centralized control device; The centralized control device displays the recharging screen of the single crystal furnace platform that needs to be recharged and controls the single crystal furnace platform that needs to be recharged to perform recharging; Repeat the above steps, and the single crystal furnace platform that needs to be recharged performs multiple recharges.

2. The reinvestment method according to claim 1, wherein: The judgment of whether the recharging condition is met includes: Judge whether the solid-liquid area ratio of the silicon material and the silicon melt in the single crystal furnace reaches the preset area ratio value. If so, judge whether the key crystal pulling parameters reach the preset parameter value. If so, then perform the transmission of recharging information.

3. The re-investment method according to claim 2, characterized in that: The key crystal pulling parameters include crucible rotation, crucible position, furnace pressure, inert gas flow rate, main heater power, bottom heater power, and deflector tube height.

4. The re-investment method according to any one of claims 1-3, characterized in that: The centralized control device receives the recharging screens of multiple single crystal furnace platforms, sorts the recharging screens of each single crystal furnace platform, and centrally manages the recharges of each single crystal furnace platform.

5. The re-investment method according to claim 4, wherein: When sorting the recharging screens of each single crystal furnace platform, the sorting order is as follows: the screen of the recharging cylinder in the open state and in the process of feeding materials, the screen of the recharging cylinder in the ready-to-open state, the screen of the recharging cylinder in the non-openable state, and the screen of the recharging cylinder in the completed recharging state.

6. The reinvestment method according to claim 1, characterized in that: If the single crystal furnace platform that needs to be recharged does not meet the recharging condition, an alarm is given and abnormal signal processing is performed.

7. The re-investment method according to any one of claims 1-3 and 5-6, characterized in that: Before obtaining the solid-liquid area ratio of the silicon material and the silicon melt in the single crystal furnace, it further includes: Suspend the recharging cylinder and judge whether the secondary chamber rotates back. If so, perform secondary chamber purification.

8. The method of recycling according to any one of claims 1-3 and 5-6, characterized in that: In the step where the centralized control device controls the single crystal furnace platform that needs to be recharged to perform recharging, the single crystal furnace platform that needs to be recharged executes an automatic recharging process.

9. A re-investment system, characterized in that: It includes a centralized control device and multiple single crystal furnace platforms. Multiple said single crystal furnace platforms are all connected to the centralized control device for transmitting recharging signals. The centralized control device is configured to: Receive the recharging signals of each single crystal furnace platform; Judge whether each single crystal furnace platform meets the recharging condition; Receive the recharging screens of each single crystal furnace platform and sort the recharging screens of each single crystal furnace platform; Control each single crystal furnace platform to perform recharging.

10. The re-investment system according to claim 9, characterized in that: The single crystal furnace platform is configured to: when recharging is needed, obtain the solid-liquid area ratio of the silicon material and the silicon melt in the single crystal furnace; Adjust the key crystal pulling parameters according to the solid-liquid area ratio; Transmit the recharging signal to the centralized control device; Receive the recharging information of the centralized control device; Perform automatic recharging.

11. An electronic device, characterized in that: It includes a memory, a processor, and a computer program stored on the memory and executable on the processor. When the processor executes the program, it implements the method described in any one of claims 1-8.

12. A computer-readable storage medium, characterized in that: A computer program is stored thereon. When the program is executed by the processor, it implements the method described in any one of claims 1-8.

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