Flexible transparent antenna and low-temperature preparation method thereof

Abstract

The invention discloses a flexible transparent antenna and a low-temperature preparation method thereof, and relates to the technical field of antennas. According to the technical key points, the transparent antenna provided by the invention is a planar monopole antenna, adopts coplanar waveguide feed and comprises an upper layer and a lower layer, and the lower layer is made of a transparent dielectric material; the radiation patch and the grounding plate are located on the upper layer, the patch of the layer adopts a partially oxidized or partially halogenated copper-based chalcogenide transparent conductive film, and the film is prepared by magnetron sputtering coating and chemical post-processing methods and is arranged into an antenna shape by pasting a mask plate. According to the transparent antenna provided by the invention, the light transmittance and the electric conductivity of the transparent antenna can be balanced by adjusting the components of the copper-based compound of the radiation patch, and meanwhile, the transparent antenna shows excellent bending resistance.

Description

Technical Field

[0001] The present invention relates to the technical field of antennas, and particularly relates to a flexible transparent antenna and a low-temperature preparation method thereof. Background Art

[0002] With the evolution of wireless communication technology towards high-frequency, miniaturization, and environmental integration, transparent antennas, as the core components for realizing device invisibility and space integration, have become key requirements for 5G mobile terminals, intelligent vehicle windows, wearable electronics, and satellite communication systems. Traditional metal antennas are difficult to meet the stringent requirements of modern electronic devices for visual concealment and space integration due to their opacity, while existing transparent conductive material systems have significant performance bottlenecks in terms of conductivity, light transmittance, mechanical flexibility, and manufacturing cost, severely restricting the practical application process of transparent antennas.

[0003] Currently, existing transparent antennas use indium tin oxide (ITO) as the radiation material, but its inherent brittleness results in insufficient device flexibility and is extremely prone to fracture failure after repeated bending. In addition, the film-forming process of oxides such as ITO is usually higher than 300°C, making it difficult to coat on heat-intolerant flexible polymer substrates, which is not conducive to its application in flexible antennas. Nano-metal thin films and AgHT multi-layer films have not yet formed large-scale applications due to problems such as unbalanced light-transmitting and conductive performance and poor environmental stability. Therefore, the key materials and preparation technologies for flexible transparent antennas are extremely scarce. Summary of the Invention

[0004] The purpose of the present invention is to solve the above problems and provide a flexible transparent antenna and a low-temperature preparation method thereof.

[0005] To achieve the above purpose, the technical solution of the present invention is as follows: A flexible transparent antenna and a low-temperature preparation method thereof, including:

[0006] The flexible transparent antenna structure is a planar monopole antenna, fed by a coplanar waveguide, and is divided into upper and lower layers in total. The dielectric material of the lower layer uses a transparent dielectric; the radiation patch and the ground plane are both located in the upper layer. The patch of this layer uses a partially oxidized or partially halogenated copper-based chalcogenide transparent conductive thin film, and the thin film is prepared by magnetron sputtering and chemical post-treatment methods. The shape of the thin film is set into the antenna shape by pasting a mask plate.

[0007] A low-temperature processing technology for a flexible transparent antenna, the specific steps are as follows:

[0008] Step 1, provide a clean transparent dielectric layer and cover a mask plate with an antenna shape;

[0009] Step 2: Using the magnetron sputtering method, a copper-based chalcogenide ceramic (including at least one of CuS, Cu2S, CuSe, Cu2Se, CuTe, Cu2Te) is used as the sputtering target, and a copper-based chalcogenide is deposited on a transparent dielectric substrate covered with a mask plate as the main material of the radiation patch layer;

[0010] Step 3: The film obtained by the above magnetron sputtering is placed in an oxygen-containing or halogen-containing gas / solution environment and reacted at 50 - 150 °C for 10 - 60 minutes for partial oxidation or partial halogenation to improve its transparency. It is naturally cooled to room temperature, and an antenna device is formed through a radio frequency connector and a radio frequency cable.

[0011] The transparent dielectric in Step 1 is one or more of polyvinyl alcohol (PVA), polyethylene terephthalate (PET), polyimide (PI), and polyethylene naphthalate (PEN).

[0012] The antenna shape in Step 1 adopts a planar monopole antenna design.

[0013] The antenna dimensions in Step 1 are as follows: the thickness h of the radiation patch and the ground plane patch is 0 - 0.1 mm, the thickness h of the dielectric substrate sub is 0.1 - 1 mm, the width G of the gap between the middle strip and the ground plane is 0.1 - 10 mm, the length and width (L, W) of the dielectric substrate, the length and width (L m 、W m ) of the rectangular radiation patch, the length and width (X g 、Y g ) of the ground plane, the width W of the middle strip x 、the distance W from the top of the middle strip to the bottom of the groove y , the distance W from the patch to the bottom of the groove g , the distance L from the left side to the right side of the groove g are all 1 - 100 mm.

[0014] The chemical reaction temperature in Step 2 is from room temperature to 150 °C, and the film thickness is 50 - 200 nm.

[0015] The radiation patch of the flexible transparent antenna provided in the present invention uses a partially oxidized or partially halogenated copper-based chalcogenide transparent conductive film. By controlling the reaction time to adjust the chalcogen element content (80 - 100%) in the radiation patch, the conductivity (3000 - 5000 S / cm) and visible light transmittance (60 - 80%) of the radiation patch can be regulated, which provides a solution for the balance of the conductivity and light transmittance of the transparent antenna. And after 5000 bends, the conductivity of the radiation patch remains above 95%, endowing the transparent antenna with excellent flexibility and providing a key material basis for the application of flexible transparent antennas. Description of the Drawings

[0016] Figure 1 is a schematic top - down view of the flexible transparent antenna in an embodiment of the present invention;

[0017] Figure 2 is the S11 diagram of the flexible transparent antenna in an embodiment of the present invention;

[0018] Figure 3 are the radiation patterns of the E - plane and H - plane of the flexible transparent antenna in an embodiment of the present invention;

[0019] Figure 4 is the visible light transmittance diagram of the flexible transparent antenna in an embodiment of the present invention.

[0020] Figure 5 is the bending resistance test diagram of the flexible transparent antenna in an embodiment of the present invention. Detailed Description of the Embodiment

[0021] In order to enable those skilled in the art to better understand the solution of the present invention, the technical solution of the present invention will be further described in detail below in conjunction with the embodiments and drawings of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0022] It should be noted that, without conflict, the embodiments and features in the embodiments of the present invention can be combined with each other. The present invention will be described in detail below in conjunction with the embodiments.

[0023] Embodiment 1: (Verify the function of the antenna device)

[0024] Step 1: Clean the transparent medium, and cover the surface with a mask plate having an antenna pattern. The antenna dimensions are shown in Table 1. The antenna pattern is as Figure 1 shown. The present invention embodiment gives the specific dimensions of each structural parameter of a group of transparent antennas, as shown in Table 1.

[0025] Table 1 Specific dimensions of the antenna (unit: mm)

[0026]

[0027] Step 2: Place the transparent dielectric substrate covered with the mask plate in the magnetron sputtering deposition chamber. Wait until the vacuum degree is pumped to 1×10 -4After reaching 1 Pa, argon is introduced to stabilize the pressure in the deposition chamber at 1 Pa. Subsequently, radio frequency sputtering is carried out using a CuS target with a power of 70 W and a sputtering time of 30 min to obtain CuS with a thickness of about 100 nm on the transparent medium as the main material of the radiation patch.

[0028] Step 3: Take out the CuS patch sample prepared by the above magnetron sputtering and fix it face down in a petri dish. Place 10 g of iodine powder with a purity of 99.5% in a quartz glass bottle with a height of 5 cm and a diameter of 3 cm, and invert the petri dish with the fixed CuS patch sample over the mouth of the quartz glass bottle. Heat from the bottom of the quartz glass bottle to 100 °C and keep it for 2 min and then cool it to obtain a partially iodized flexible transparent Cu - S - I radiation patch, and connect a radio frequency connector or radio frequency cable.

[0029] In the Cu - S - I radiation patch prepared by the above method, the S content is about 90 at%, the conductivity is 5000 S / cm, and the visible light transmittance is 57%. As Figure 2 shown, in the frequency range of 1.2 - 4.8 GHz, the S11 of this transparent antenna is less than - 10 dB. At 2.4 GHz, the S11 of the antenna reaches - 16.2 dB, achieving good matching. As Figure 3 shown, the two - dimensional radiation pattern of the antenna is the pattern of a classic monopole antenna, with its E - plane presenting an 8 - shape and the H - plane being an omnidirectional radiation plane.

[0030] Example 2: (Verifying the light transmittance and flexibility of the antenna material)

[0031] In step 1, no mask template is used, and the iodization holding times in step 3 are 2, 5, 10, 15, and 20 minutes respectively, and other implementation processes are the same as those in Example 2.

[0032] As Figure 4 shown, due to the different iodization durations, the sulfur content in this antenna material varies in the range of 0 - 90.4 at%, and the maximum transmittance of all samples reaches more than 60%. As Figure 5 shown, after the antenna undergoes 5000 bending cycles with a bending radius of 8 mm, the resistance change rate is less than 5%.

[0033] The above specific embodiments are only explanations of the present invention, and they are not limitations on the present invention. Those skilled in the art can make modifications without creative contributions to the present embodiment according to needs after reading this specification, but as long as they are within the scope of the claims of the present invention, they are protected by the patent law.

Claims

1. A flexible transparent antenna and its low-temperature preparation method, characterized in that: It includes a transparent dielectric layer and a radiation patch layer above the transparent dielectric layer. The material of the radiation patch layer is a partially oxidized or partially halogenated copper-based chalcogenide (including at least one of CuS, Cu2S, CuSe, Cu2Se, CuTe, Cu2Te).

2. The flexible transparent antenna according to claim 1, characterized in that: The thickness of the radiation patch is 100 - 500 nm, the conductivity is continuously adjustable within the range of 3000 - 5000 S / cm, and the visible light transmittance is not less than 60%.

3. The flexible transparent antenna according to claim 1, characterized in that: The transparent dielectric layer is one or more of polyvinyl alcohol (PVA), polyethylene terephthalate (PET), polyimide (PI), polyethylene naphthalate (PEN).

4. The low-temperature preparation method of the flexible transparent antenna according to claim 1, characterized in that: It includes the following steps: Step 1: Provide a clean transparent dielectric layer and cover it with a mask plate having an antenna shape. Step 2: Use the magnetron sputtering method to prepare a copper-based chalcogenide thin film on the transparent dielectric substrate covered with the mask plate at a process temperature below 150 °C as the main material of the radiation patch layer. Step 3: Place the thin film obtained by the above magnetron sputtering in a gas / solution environment containing oxygen or halogen, react at 50 - 150 °C for 1 - 20 minutes for partial oxidation or partial halogenation to improve its transparency, and form an antenna device through a radio frequency connector and a radio frequency cable.

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