Power semiconductor module and power conversion device

Abstract

This power semiconductor module is provided with: a power semiconductor element for switching between conduction and non-conduction between a first electrode and a second electrode in accordance with a control signal supplied to a control electrode; a heat dissipation plate capable of dissipating heat of the power semiconductor element; a first power line section and a second power line section that transmit power between the first electrode and the second electrode; a first control line section that supplies a control signal to the control electrode; and a second control line section providing a reference potential of the control signal. The heat dissipation plate includes a shielding layer formed of a material having at least one of electrical conductivity and magnetism. The heat dissipation plate has at least one through hole penetrating between the front surface and the back surface. In the first power line portion, the second power line portion, the first control line portion, and the second control line portion, only the first control line portion and the second control line portion are led out to a region on the back surface of the heat dissipation plate through the through hole.

Description

Technical Field

[0001] The present disclosure relates to a power semiconductor module and a power conversion device. Background Art

[0002] Patent Documents 1 to 8 disclose technologies related to power semiconductor modules for power conversion devices and the like. For example, Patent Document 1 discloses a module element constituting an inverter bridge. In this module element, a transistor pellet is accommodated inside a container composed of a copper base and a lid. The transistor pellet is placed on the copper base via an insulating layer ceramic and a copper material. The collector terminal, emitter terminal, and gate terminal are electrically connected to the collector, emitter electrode, and gate electrode of the transistor pellet via wire bonding or the like, respectively. These terminals are all led out from the upper lid to the outside of the container.

[0003] Patent Document 1: Japanese Patent Laid-Open No. 3-214657

[0004] Patent Document 2: Japanese Patent Laid-Open No. 2004-039749

[0005] Patent Document 3: Japanese Patent Laid-Open No. 2009-105178

[0006] Patent Document 4: Japanese Patent Laid-Open No. 2005-183776

[0007] Patent Document 5: Japanese Patent No. 2001-185679

[0008] Patent Document 6: Japanese Patent Laid-Open No. 2006-191765

[0009] Patent Document 7: Japanese Patent Laid-Open No. 2007-335808

[0010] Patent Document 8: Japanese Patent Laid-Open No. 2021-150451

[0011] The output voltage required for the power conversion device as described above is increasing. As the output voltage increases, the voltage applied to the collector and source electrodes of the module element also increases. As a result, the radiation noise (electromagnetic noise) radiated from the wire or the like connected to the collector and source electrodes also increases. On the other hand, the gate voltage input to the gate electrode is extremely low compared to the high voltage applied to the collector and source electrodes. Therefore, if large radiation noise from the wire or the like of the collector and source electrodes propagates to the gate electrode, the gate voltage may fluctuate significantly due to the influence of the radiation noise. Such fluctuations in the gate voltage may cause malfunction such as a malfunction of the module element. Summary of the Invention

[0012] The present disclosure describes a power semiconductor module and a power conversion device capable of suppressing the occurrence of malfunction caused by radiated noise.

[0013] A power semiconductor module according to one aspect of the present disclosure includes: a power semiconductor element having a first electrode, a second electrode, and a control electrode, which alternately switches conduction and non-conduction between the first electrode and the second electrode according to a control signal supplied to the control electrode; a heat sink having a surface on which the power semiconductor element is disposed and a back surface opposite to the surface, and capable of dissipating heat from the power semiconductor element; a first power line portion and a second power line portion electrically connected to the first electrode and the second electrode respectively, for transmitting power between the first electrode and the second electrode; a first control line portion electrically connected to the control electrode for supplying the control signal to the control electrode; and a second control line portion electrically connected to the second electrode for providing a reference potential of the control signal. The heat sink includes a shielding layer made of a material having at least one of electrical conductivity and magnetism. The heat sink has at least one through hole penetrating between the surface and the back surface. Among the first power line portion, the second power line portion, the first control line portion, and the second control line portion, only the first control line portion and the second control line portion are led out to a region on the back surface of the heat sink through the through hole.

[0014] According to the present disclosure, there is provided a power semiconductor module and a power conversion device capable of suppressing the occurrence of malfunction caused by radiated noise. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 is a circuit diagram of a power conversion device including a power conversion device having one embodiment.

[0016] Figure 2 is a representation of Figure 1 a cross-sectional view of the power semiconductor module of the power conversion device.

[0017] Figure 3 is a top view of the power semiconductor element of the power semiconductor module viewed from above Figure 2 thereof.

[0018] Figure 4 is a simplified cross-sectional view of a power semiconductor module of a comparative example.

[0019] Figure 5 is a simplified representation of Figure 2 a cross-sectional view of the power semiconductor module thereof.

[0020] Figure 6 is a cross-sectional view of a power semiconductor module showing Modification 1.

[0021] Figure 7 is a simplified cross-sectional view of a power semiconductor module showing Modification 2.

[0022] Figure 8 is a top view of the power semiconductor device observed from above Figure 7 of the power semiconductor device.

[0023] Figure 9 is a cross-sectional view schematically showing the power semiconductor module of Modification 3.

[0024] Figure 10 is a cross-sectional view schematically showing the power semiconductor module of Modification 4.

[0025] Figure 11 is a cross-sectional view schematically showing the power semiconductor module of Modification 5.

[0026] Figure 12 is a cross-sectional view schematically showing the power semiconductor module of Modification 6. DETAILED DESCRIPTION

[0027] A power semiconductor module according to an aspect of the present disclosure includes: a power semiconductor device having a first electrode, a second electrode, and a control electrode, and alternately switching conduction and non-conduction between the first electrode and the second electrode according to a control signal supplied to the control electrode; a heat sink having a surface on which the power semiconductor device is disposed and a back surface opposite to the surface, and capable of dissipating heat from the power semiconductor device; a first power line portion and a second power line portion respectively electrically connected to the first electrode and the second electrode and transmitting power between the first electrode and the second electrode; a first control line portion electrically connected to the control electrode and supplying the control signal to the control electrode; and a second control line portion electrically connected to the second electrode and supplying a reference potential of the control signal. The heat sink includes a shielding layer made of a material having at least one of electrical conductivity and magnetism. The heat sink has at least one through hole penetrating between the surface and the back surface. Among the first power line portion, the second power line portion, the first control line portion, and the second control line portion, only the first control line portion and the second control line portion are led out to a region on the back surface of the heat sink through the through hole.

[0028] In the above-mentioned power semiconductor module, conduction and non-conduction between the first electrode and the second electrode are alternately switched according to a control signal input to the control electrode. A large amount of power is applied to the first electrode and the second electrode in the conduction state. Along with this, a large amount of radiation noise is radiated from the first electrode and the second electrode. In the above-mentioned power semiconductor module, among the first power line portion, the second power line portion, the first control line portion, and the second control line portion, only the first control line portion and the second control line portion are led out to the area on the back surface of the heat sink through at least one through-hole of the heat sink. In addition, the heat sink includes a shielding layer made of a material having at least one of electrical conductivity and magnetism. Therefore, the radiation noise radiated from the first power line portion and the second power line portion can be shielded by the heat sink. Therefore, in the above-mentioned power semiconductor module, the first power line portion and the second power line portion in the area on the surface of the heat sink and the first control line portion and the second control line portion in the area on the back surface of the heat sink are separated by the heat sink. Therefore, it is possible to suppress the propagation of radiation noise from the first power line portion and the second power line portion to the first control line portion and the second control line portion through the heat sink. In this way, by using the heat sink as a shielding plate for shielding radiation noise, it is possible to suppress the propagation of a large amount of radiation noise from the first power line portion and the second power line portion to the first control line portion and the second control line portion. As a result, it is possible to suppress a large change in the control signal due to the influence of radiation noise. As a result, it is possible to suppress the occurrence of malfunction such as a malfunction of the power semiconductor element caused by the change in the control signal.

[0029] In some embodiments, the first control line portion may also have a first monotonically increasing region that extends from the cross-section of the through-hole and monotonically increases the distance between the first power line portion and the second power line portion in the direction from the control electrode toward the through-hole. The second control line portion may also have a second monotonically increasing region that extends from the cross-section of the through-hole and monotonically increases the distance between the first power line portion and the second power line portion in the direction from the second electrode toward the through-hole.

[0030] In some embodiments, the power semiconductor module may also include a cover covering the surface of the heat sink on which the power semiconductor element is mounted. The first power line portion and the second power line portion may extend from the first electrode and the second electrode toward the cover or may be led out to the outside of the area covered by the cover via the cover. The cover may also have a side wall portion and a top plate opposed to the surface across the side wall portion. The first power line portion and the second power line portion may extend from the first electrode and the second electrode toward the top plate or may be led out to the outside of the area covered by the cover via the top plate. In such a structure, since the first control line portion and the second control line portion can be led out to the side opposite to the first power line portion and the second power line portion, it is possible to more effectively suppress the propagation of radiation noise from the first power line portion and the second power line portion to the first control line portion and the second control line portion.

[0031] In some ways, the first electrode can also be configured to face the surface. The second electrode and the control electrode can also be disposed on the side opposite to the surface with the first electrode therebetween. At least one through hole can also be formed at a position that does not overlap with the second electrode and the control electrode when the heat sink is viewed from above. In this case, a structure in which the first control line portion and the second control line portion are led out to the area on the back surface of the heat sink through the through hole can be easily achieved.

[0032] In some ways, the second electrode and the control electrode can also be configured to face the surface. The first electrode can also be disposed on the side opposite to the surface with the second electrode and the control electrode therebetween. At least one through hole can also be formed at a position that overlaps with the second electrode and the control electrode when the heat sink is viewed from above. In this case, since the distance from the gate electrode and the source electrode to the through hole can be shortened as much as possible, the portions of the first control line portion and the second control line portion that are exposed inside the housing and through which radiation noise can propagate can be reduced as much as possible. Thereby, the risk of radiation noise propagating to the first control line portion and the second control line portion inside the housing can be reduced.

[0033] In some ways, the heat sink can also have one through hole. The first control line portion and the second control line portion can also be led out to the area on the back surface through one through hole. Thus, when the first control line portion and the second control line portion pass through one through hole together, the distance between the first control line portion and the second control line portion becomes closer, and accordingly, the area of the loop formed by the first control line portion and the second control line portion becomes smaller. In this way, if the area of the loop becomes smaller, the electromotive force generated when an electromagnetic wave (radiation noise) links with the loop can be reduced. Thereby, the risk of generating large conduction noise in the first control line portion and the second control line portion can be reduced.

[0034] In some ways, the first control line portion and the second control line portion can also be led out to the area on the back surface through one through hole in a state of being twisted with each other. In this case, it functions in such a way that even if radiation noise from the first power line portion and the second power line portion is propagated to the first control line portion and the second control line portion, the conduction noise generated in the first control line portion and the second control line portion and the conduction noise generated in the twisted portion in front thereof cancel each other out. Therefore, the risk of generating large conduction noise in the first control line portion and the second control line portion can be reduced.

[0035] In some ways, the power semiconductor module may also include a cylindrical electromagnetic shielding member that is disposed between the second electrode and the control electrode and the opening of a through hole on the surface so as to surround the first control line portion and the second control line portion, and includes a shielding layer made of a material having at least one of electrical conductivity and magnetism. In this case, since the electromagnetic shielding member can shield the radiation noise from the first power line portion and the second power line portion, the propagation of the radiation noise to the first control line portion and the second control line portion inside the electromagnetic shielding member can be suppressed.

[0036] In some ways, the first control line portion and the second control line portion may also include a common mode filter or a transformer that can remove the common mode component of the conducted noise conducted in the first control line portion and the second control line portion. The common mode filter or the transformer may also be disposed inside a through hole. In this case, since the common mode component of the conducted noise that may be generated in the first control line portion and the second control line portion can be removed, the occurrence of fluctuations in the control signal caused by the common mode component can be suppressed. In addition, by disposing the common mode filter or the transformer inside the through hole of the heat sink, the propagation of the radiation noise from the first power line portion and the second power line portion to the first control line portion and the second control line portion via the common mode filter or the transformer can be suppressed.

[0037] In some ways, the heat sink may also have a first through hole and a second through hole formed at different positions on the surface as the through holes. The first control line portion may be led out to a region on the back surface through the first through hole. The second control line portion may be led out to a region on the back surface through the second through hole. In this case, the first control line portion and the second control line portion can reach the first through hole and the second through hole respectively at the shortest distance. As a result, the portions of the first control line portion and the second control line portion exposed inside the housing that can propagate the radiation noise can be minimized as much as possible, and thus the risk of the radiation noise propagating to the first control line portion and the second control line portion inside the housing can be reduced.

[0038] The power conversion device according to one aspect of the present disclosure includes: a power conversion unit having any one of the above-described power semiconductor modules, which converts the form of the first power supplied from a power source into the form of the second power required by a load device; and a control unit that sends a control signal to the power semiconductor module. Since the power conversion device included in the power conversion device has any one of the above-described power semiconductor modules, as described above, the occurrence of malfunction such as a malfunction of the power semiconductor element caused by fluctuations in the control signal can be suppressed.

[0039] Hereinafter, the semiconductor unit and the power conversion device of the present disclosure will be described in detail with reference to the drawings. In the description of the drawings, the same reference numerals are assigned to the same devices, and redundant descriptions are omitted.

[0040] Figure 1 The power conversion device 1 shown converts the power received from the power source B into the power required by the load device M. The power source B outputs DC power, for example. The power source B has a power positive terminal B1 and a power negative terminal B2. The load device M is, for example, a three-phase AC motor. The three-phase AC motor can be used as a power source for rotating an impeller. The power conversion device 1 can also be adopted as an electrical component such as an electric compressor or an electric blower. The electric compressor can also be mounted on a moving body such as a vehicle, for example.

[0041] The power conversion device 1 of the present embodiment converts DC power into AC power. That is, in the present embodiment, as the form of the first power, DC power is exemplified, and as the form of the second power, AC power is exemplified. The power conversion device 1 can be an inverter in a narrow sense. The power conversion device 1 can also convert AC power into DC power. That is, the power conversion device 1 can also be a converter. The power conversion device 1 can also convert the DC power of the first form into the DC power of the second form.

[0042] The power conversion device 1 has a positive terminal A1 and a negative terminal A2 as input terminals. The positive terminal A1 is connected to the power positive terminal B1. The negative terminal A2 is connected to the power negative terminal B2. The power conversion device 1 has output terminals D1, D2, and D3 as output terminals. These output terminals D1, D2, and D3 are connected to the load device M. For example, the output terminals D1, D2, and D3 correspond to the U phase, V phase, and W phase of the three-phase AC motor, respectively.

[0043] The power conversion device 1 has a capacitor C and a switch circuit 2 (power conversion unit) as electrical components. The capacitor C is connected between the power source B and the load device M. The capacitor C is, for example, a DC capacitor. The positive terminal C1 of the capacitor C is connected to the power positive terminal B1. The negative terminal C2 of the capacitor C is connected to the power negative terminal B2. The switch circuit 2 is connected between the capacitor C and the load device M. The switch circuit 2 converts DC power into pseudo-AC power. The switch circuit 2 includes power semiconductor elements 10A to 10F as switches and connection points P1 to P9.

[0044] The connection points P1, P4, and P7 are connected to the positive terminal C1 of the capacitor C. The connection points P3, P6, and P9 are connected to the negative terminal C2 of the capacitor C. The connection points P2, P5, and P8 are respectively connected to the output terminals D1, D2, and D3. The power semiconductor element 10A is connected to the connection points P1 and P2. The power semiconductor element 10B is connected to the connection points P2 and P3. The connection points P1, P2, P3 and the power semiconductor elements 10A, 10B form a first branch. Similarly, the connection points P4, P5, P6 and the power semiconductor elements 10C, 10D form a second branch. The connection points P7, P8, P9 and the power semiconductor elements 10E, 10F form a third branch.

[0045] The power semiconductor elements 10A to 10F are, for example, semiconductor switches such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) or IGBTs (Insulated Gate Bipolar Transistors). The power semiconductor elements 10A to 10F are electrically connected to the control substrate 3 (control unit). The power semiconductor elements 10A to 10F are switched on or off according to the control signal E1 output from the control substrate 3. The control substrate 3 is constituted by, for example, a computer including a CPU, a ROM, and a RAM. Hereinafter, when not separately distinguishing the power semiconductor elements 10A to 10F, each of the power semiconductor elements 10A to 10F will be simply referred to as "power semiconductor element 10" for explanation.

[0046] As Figure 2 shown, the power semiconductor element 10 is housed inside the housing 20. The power semiconductor element 10 and the housing 20 constitute the power semiconductor module 5. In the present embodiment, an example is shown in which all six power semiconductor elements 10A to 10F are housed in one housing 20. However, for example, it may also be a mode in which each of the six housings houses one power semiconductor element (that is, a mode in which one housing houses one power semiconductor element). It may also be a mode in which each of the three housings houses two power semiconductor elements (that is, a mode in which one housing houses two power semiconductor elements), or other modes. As Figure 2As shown, the housing 20 has a heat sink 21 for disposing the power semiconductor element 10 and a cover 22 covering the power semiconductor element 10. The heat sink 21 is, for example, a plate-like member configured to include a material having thermal conductivity capable of dissipating heat from the power semiconductor element 10. The material having thermal conductivity capable of dissipating heat from the power semiconductor element 10 can be, for example, a material having a low thermal resistance to the extent that it can transfer the heat of the power semiconductor element 10 to other constituent devices. The heat sink 21 is, for example, a metal plate made of a metal material such as copper.

[0047] Such a metal material has electrical conductivity (i.e., electric conductivity) capable of shielding radiation noise. Therefore, the heat sink 21 also has a function as a shielding plate for shielding radiation noise. Radiation noise is electromagnetic noise in which an electric field and a magnetic field are alternately wound and propagated in space. Radiation noise is generated, for example, along with the switching operation of the power semiconductor element 10. That the heat sink 21 can shield radiation noise means that the heat sink 21 has a function of preventing or suppressing the passage of radiation noise through the heat sink 21. Thus, the heat sink 21 has thermal conductivity capable of dissipating heat from the power semiconductor element 10 and electrical conductivity capable of shielding radiation noise. Thus, the heat sink 21 is configured such that its entirety can shield radiation noise as a shielding layer. However, it is not necessary for the entire heat sink 21 to be composed of a shielding layer. The heat sink 21 may also be a structure including a shielding layer in a part thereof. The shielding layer may also be constituted by a thin plate, a mesh, or other known shielding structures made of a material that shields radiation noise. For example, the heat sink 21 may also have a structure in which a metal layer (i.e., a shielding layer) is laminated (e.g., plated) on an insulating layer having electrical insulation. That is, the heat sink 21 may have an insulating layer and a metal layer (i.e., a shielding layer) laminated on the insulating layer. As materials capable of shielding radiation noise, in addition to materials having electrical conductivity, materials having magnetism can also be cited. Therefore, the heat sink 21 may be made of a material having magnetism instead of electrical conductivity, or may be made of a material including both electrical conductivity and magnetism. Even with such a structure, the heat sink 21 can shield radiation noise.

[0048] The heat dissipation plate 21 includes a surface 21a on which the power semiconductor element 10 is disposed, a back surface 21b on the side opposite to the surface 21a, and a through hole 21c that penetrates from the surface 21a to the back surface 21b. The surface 21a and the back surface 21b may be, for example, parallel planes. For the power semiconductor element 10 being disposed on the surface 21a, in addition to the case where the power semiconductor element 10 is directly fixed to the surface 21a, it also includes the case where the power semiconductor element 10 is indirectly fixed to the surface 21a via other components. In the present embodiment, the power semiconductor element 10 is indirectly fixed to the surface 21a via the insulating layer 31 and the conductive layer 32. Hereinafter, the direction from the surface 21a toward the back surface 21b is referred to as "down", and the direction from the back surface 21b toward the surface 21a is referred to as "up". The surface 21a of the heat dissipation plate 21 observed from above is referred to as "plan view".

[0049] The insulating layer 31 is, for example, a flat ceramic layer with high thermal conductivity. The insulating layer 31 includes a back surface 31b opposite to the surface 21a and a surface 31a facing the side opposite to the surface 21a. The conductive layer 32 is, for example, a flat copper plate and is disposed on the surface 31a of the insulating layer 31. The conductive layers 33 and 34 are disposed on both sides of the surface 31a with the conductive layer 32 therebetween. The conductive layers 33 and 34 may be, for example, flat copper plates respectively. The conductive layers 33 and 34 are separated from the conductive layer 32 and are electrically insulated from the conductive layer 32. The conductive layer 34 may not be separated from the conductive layer 32 and may be integrated with the conductive layer 32. In this case, the wire 41a for connecting the conductive layer 32 and the conductive layer 34 can be omitted.

[0050] The through holes 21c and 31c are respectively formed in the heat dissipation plate 21 and the insulating layer 31. The through hole 31c penetrates the insulating layer 31 from the surface 31a exposed between the conductive layer 32 and the conductive layer 33 to the back surface 31b, for example. The through hole 21c penetrates the heat dissipation plate 21 from the surface 21a to the back surface 21b at a position vertically communicating with the through hole 31c. The through holes 21c and 31c have a size that can allow the first control line portion 43 and the second control line portion 44 described later to be inserted therethrough together. In the present embodiment, the inner diameter of the through holes 21c and 31c has a size of about 1.5 times to 30 times the total cross-sectional area of the first control line portion 43 and the second control line portion 44, for example. In the present disclosure, since the through holes 21c and 31c constitute a single through hole communicating with each other, the through holes 21c and 31c are sometimes collectively referred to as "through hole H10".

[0051] The power semiconductor element 10 has a drain electrode 11 (first electrode), a source electrode 12 (second electrode), and a gate electrode 13 (control electrode) that are electrically insulated from each other. The source electrode 12 and the gate electrode 13 are located, for example, on the side opposite to the drain electrode 11 in the power semiconductor element 10. The positional relationship among the source electrode 12, the gate electrode 13, and the drain electrode 11 is not limited to such a structure and can be changed appropriately. In the present embodiment, the power semiconductor element 10 is disposed on the conductive layer 32 such that the drain electrode 11 faces the surface 21a. For the drain electrode 11 to face the surface 21a, in addition to the case where the drain electrode 11 directly faces the surface 21a, it also includes the case where the drain electrode 11 faces the surface 21a with other components therebetween. In the present embodiment, the drain electrode 11 faces the surface 21a with the conductive layer 32 and the insulating layer 31 therebetween.

[0052] The gate electrode 13 and the source electrode 12 are located on the side opposite to the surface 21a with the drain electrode 11 therebetween. Therefore, in the present embodiment, the power semiconductor element 10 is disposed on the conductive layer 32 such that the gate electrode 13 and the source electrode 12 face upward. The gate electrode 13 and the source electrode 12 are electrically connected to the control substrate 3. A control signal E1 output from the control substrate 3 is input to the gate electrode 13 and the source electrode 12. The control signal E1 is a signal representing a gate voltage (or gate current) for controlling the switching between conduction and insulation between the drain electrode 11 and the source electrode 12. The gate voltage represents the potential difference of the gate electrode 13 with respect to the potential of the source electrode 12.

[0053] The cover 22 is disposed on the surface 21a of the heat sink 21 so as to cover the power semiconductor element 10. The cover 22 is used, for example, to protect the power semiconductor element 10 from external moisture, dirt, and the like. The cover 22 is made of, for example, a resin material having electrical insulation properties. The cover 22 has a top plate 22a and side plates 22b. The top plate 22a is a plate member that faces the surface 21a of the heat sink 21 with the power semiconductor element 10 therebetween in the vertical direction. The side plates 22b (side wall portions) are frame-shaped plate members that connect the top plate 22a and the surface 21a in the vertical direction and surround the power semiconductor element 10. The cover 22 is mounted on the surface 21a of the heat sink 21 so as to cover the power semiconductor element 10.

[0054] The power semiconductor module 5 further includes: a first power line portion 41 electrically connected to the drain electrode 11; a second power line portion 42 electrically connected to the source electrode 12; a first control line portion 43 electrically connected to the gate electrode 13; and a second control line portion 44 electrically connected to the source electrode 12. In this specification, that a certain device is "electrically connected" to another device means that the two devices are connected in a state where signals can be transmitted and power can be supplied between the two devices. Therefore, "electrically connected" includes both the case where the two devices are directly connected to each other through wiring and the case where the two devices are indirectly connected via other electrical components.

[0055] The first power line portion 41 and the second power line portion 42 constitute a main circuit for supplying power from the drain electrode 11 to the source electrode 12. The first power line portion 41 and the second power line portion 42 are each composed of one or more electrical conductors capable of transmitting power from the drain electrode 11 to the source electrode 12. The electrical conductors constituting the first power line portion 41 and the second power line portion 42 can be, for example, conductors such as wiring, leads, wires, cables, or lead terminals. The first power line portion 41 and the second power line portion 42 extend upward from the drain electrode 11 and the source electrode 12 toward the top plate 22a, pass through the top plate 22a, and are led out from the area covered by the cover 22 in the area R1 to the area outside this area. That is, the first power line portion 41 and the second power line portion 42 are led out from the inside of the housing 20 to the outside via the upper top plate 22a. More specifically, the first power line portion 41 and the second power line portion 42 are respectively led out above the top plate 22a through through-holes H1, H2 formed in the top plate 22a.

[0056] The first power line portion 41 includes, for example, a wire 41a and a lead terminal 41b. The wire 41a connects the drain electrode 11 and the conductive layer 34. The base end of the lead terminal 41b is connected to the conductive layer 34. The front end of the lead terminal 41b is led out to the outside of the cover 22 through the through-hole H1 of the top plate 22a. The lead terminal 41b is electrically connected to the drain electrode 11 via the conductive layer 34 and the wire 41a. Therefore, the power applied to the lead terminal 41b is input to the drain electrode 11 via the conductive layer 34 and the wire 41a.

[0057] The second power line portion 42 includes, for example, a wire 42a and a lead terminal 42b. The wire 42a connects the source electrode 12 and the conductive layer 33. The base end of the lead terminal 42b is connected to the conductive layer 33. The front end of the lead terminal 42b is led out to the outside of the cover 22 through the through-hole H2 of the top plate 22a. The lead terminal 42b is electrically connected to the source electrode 12 via the conductive layer 33 and the wire 42a. Therefore, the power output from the source electrode 12 is transmitted to the lead terminal 42b via the wire 42a and the conductive layer 33.

[0058] The first control line portion 43 and the second control line portion 44 constitute a control circuit for supplying a control signal E1 to the gate electrode 13. The first control line portion 43 and the second control line portion 44 are each constituted by one or more electrical conductors capable of transmitting the gate voltage represented by the control signal E1 to the gate electrode 13. The electrical conductors constituting the first control line portion 43 and the second control line portion 44 can be, for example, conductors such as wirings, leads, electric wires, cables, or lead terminals. The first control line portion 43 and the second control line portion 44 are led out from the inside of the housing 20 to the outside of the housing 20 through the through-hole H10 of the lower heat dissipation plate 21.

[0059] In the present embodiment, the first power line portion 41 and the second power line portion 42 are led out to the outside of the housing 20 through the upper cover 22. On the other hand, the first control line portion 43 and the second control line portion 44 are led out to the outside of the housing 20 through the lower heat dissipation plate 21. In other words, among the first power line portion 41, the second power line portion 42, the first control line portion 43, and the second control line portion 44, only the first control line portion 43 and the second control line portion 44 are led out through the through-hole H10 to the region R2 on the back surface 21b of the heat dissipation plate 21. As a result, the region R1 where the first power line portion 41 and the second power line portion 42 are led out is separated from the region R2 where the first control line portion 43 and the second control line portion 44 are led out by the heat dissipation plate 21. The region R1 may also be a region opposite to the front surface 21a among a pair of regions separated by the heat dissipation plate 21. The region R2 may also be a region opposite to the back surface 21b among the pair of regions.

[0060] Therefore, the first control line portion 43 and the second control line portion 44 are led out to the side opposite to the first power line portion 41 and the second power line portion 42 across the heat dissipation plate 21. As a result, at least portions including the front ends of the first control line portion 43 and the second control line portion 44 are arranged in the region R2 on the back surface 21b, and at least portions including the front ends of the first power line portion 41 and the second power line portion 42 are arranged in the region R1. The front end of the first power line portion 41 refers to one end opposite to the base end of the first power line portion 41 connected to the drain electrode 11. The front end of the second power line portion 42 refers to one end opposite to the base end of the second power line portion 42 connected to the source electrode 12. The front end of the first control line portion 43 refers to one end opposite to the base end of the first control line portion 43 connected to the gate electrode 13. The front end of the second control line portion 44 refers to one end opposite to the base end of the second control line portion 44 connected to the source electrode 12.

[0061] As Figure 2 and Figure 3As shown, a through hole H10 for the first control line portion 43 and the second control line portion 44 to pass through is formed at a position that does not overlap with the gate electrode 13 and the source electrode 12 in a plan view. More specifically, it is formed at a position far from the gate electrode 13 and the source electrode 12. For example, as Figure 3 shown, the through hole H10 is formed at a position far from the gate electrode 13 and the source electrode 12, and at a position where the total length of the line connecting the connection portion 43p of the first control line portion 43 to the gate electrode 13 and the center of the through hole H10, and the line connecting the connection portion 44p of the second control line portion 44 to the source electrode 12 and the center of the through hole H10 is the shortest. However, the through hole H10 does not necessarily have to be formed at the position where the above total length is the shortest (i.e., the ideal position). For example, when the through hole H10 cannot be formed at such an ideal position due to design or manufacturing reasons, the through hole H10 can also be formed at a position deviated from the ideal position.

[0062] As Figure 2 shown, the first control line portion 43 includes, for example, a wire material 43a and a connection terminal 43b. The wire material 43a is connected to the gate electrode 13. The wire material 43a extends downward from the gate electrode 13, passes through the through hole H10, and is led out to a region R2 on the back surface 21b of the heat sink 21. That is, the wire material 43a is led out from the inside of the housing 20 through the heat sink 21 to the outside of the housing 20. The wire material 43a led out below the heat sink 21 is connected to the control substrate 3 via the connection terminal 43b.

[0063] The second control line portion 44 includes, for example, a wire material 44a and a connection terminal 44b. The wire material 44a is connected to the source electrode 12 at a position different from the connection portion of the wire material 42a to the source electrode 12 (refer to Figure 3 ). The wire material 44a extends downward from the source electrode 12, and together with the wire material 43a of the first control line portion 43, passes through the through hole H10 and is led out to a region R2 on the back surface 21b of the heat sink 21. That is, the wire material 44a and the wire material 43a are led out from the inside of the housing 20 to the outside of the housing 20 via the heat sink 21 together. The wire material 44a led out below the heat sink 21 is connected to the control substrate 3 via the connection terminal 44b. A reference potential of the control signal E1 is given to the second control line portion 44. The reference potential refers to an arbitrarily specified reference potential and is not limited to zero V. The gate voltage represented by the control signal E1 is expressed as the difference between the potential of the first control line portion 43 and the reference potential of the second control line portion 44.

[0064] When a control signal E1 is input to the gate electrode 13 through the first control line portion 43 and the second control line portion 44, the timing of turning on or off the power semiconductor element 10 is controlled. When the gate voltage represented by the control signal E1 is equal to or higher than a threshold voltage (e.g., 5V), the power semiconductor element 10 turns on, and a conductive state is established between the drain electrode 11 and the source electrode 12. At this time, a large amount of power, such as several thousand A or several thousand V, is applied to the drain electrode 11 and the source electrode 12 via the first power line portion 41 and the second power line portion 42. On the other hand, when the gate voltage is less than the threshold voltage, the power semiconductor element 10 turns off, and an insulating state is established between the drain electrode 11 and the source electrode 12. In this way, the conduction and insulation between the drain electrode 11 and the source electrode 12 are switched according to the control signal E1, thereby switching the form of power using the power conversion device 1.

[0065] Hereinafter, the effects of the power semiconductor module 5 and the power conversion device 1 of the present embodiment will be described together with the problems of the comparative example.

[0066] Figure 4 It is a cross-sectional view simply showing the power semiconductor module 105 of the comparative example. In Figure 4 it, the power semiconductor element 110 is simply represented as a circuit diagram. The power semiconductor module 105 includes: a housing 120 having a heat sink 121 and a cover 122; a power semiconductor element 110 disposed on the surface 121a of the heat sink 121; a first power line portion 141 connected to the drain electrode 111; a second power line portion 142 connected to the source electrode 112; a first control line portion 143 connected to the gate electrode 113; and a second control line portion 144 connected to the source electrode 112. In the power semiconductor module 105, the control signal E1 is input to the gate electrode 113 through the first control line portion 143 and the second control line portion 144. According to the control signal E1, the conduction and insulation between the drain electrode 111 and the source electrode 112 are alternately switched. The first power line portion 141, the second power line portion 142, the first control line portion 143, and the second control line portion 144 are all led out to the outside of the housing 120 through the upper cover 122.

[0067] A reference potential of the control signal E1 is given to the second control line portion 144. Both the second power line portion 142 and the second control line portion 144 are connected to the source electrode 112. Different from the second power line portion 142 to which a large power E2 is given, a small potential such as zero V or several V is given to the second control line portion 144. The potential of the second power line portion 142 to which the large power E2 is applied is likely to vary greatly according to the change in the current flowing through the second power line portion 142. On the other hand, since no current flows through the second control line portion 144, the potential of the second control line portion 144 is stable. Therefore, assuming that the gate voltage is set based on the potential of the second power line portion 142 without providing the second control line portion 144, the control signal E1 is disturbed according to the change in the potential of the second power line portion 142. On the other hand, in the case where the second control line portion 144 is provided, the disturbance of the control signal E1 can be suppressed by using a stable potential as a reference.

[0068] However, as in the case of the power semiconductor module 105, when the first power line portion 141, the second power line portion 142, the first control line portion 143, and the second control line portion 144 are all led out in the same direction, the large radiation noise N radiated from the first power line portion 141 and the second power line portion 142 to which the large power E2 is applied is likely to be easily propagated to the first control line portion 143 and the second control line portion 144. Since the radiation noise N is an electromagnetic wave, it has the property of traveling straight. Therefore, the radiation noise N radiated from the first power line portion 141 and the second power line portion 142 is easily propagated to the first control line portion 143 and the second control line portion 144 that are led out upward together with the first power line portion 141 and the second power line portion 142.

[0069] For example, the radiation noise N radiated from the first power line portion 141 and the second power line portion 142 inside the housing 120 is propagated to the first control line portion 143 and the second control line portion 144 through the first path P10. The radiation noise N radiated from the first power line portion 141 and the second power line portion 142 outside the housing 120 is propagated to the first control line portion 143 and the second control line portion 144 through the second path P20. In this way, the radiation noise N generated inside and outside the housing 120 is easily propagated to the first control line portion 143 and the second control line portion 144. The radiation noise N propagated to the first control line portion 143 and the second control line portion 144 becomes a factor that causes the control signal E1 input to the gate electrode 113 to vary.

[0070] The radiated noise N radiated from the first power line portion 141 and the second power line portion 142 increases according to the power E2 applied to the first power line portion 141 and the second power line portion 142. In addition, the closer to the generation source of the radiated noise N, the greater the radiated noise N. Therefore, the radiated noise N is particularly likely to increase in the power semiconductor module 105, which is the generation source of the radiated noise N, and in its vicinity. A large power E2 such as several thousand volts or several thousand amperes is applied to the first power line portion 141 and the second power line portion 142. Therefore, there is a tendency for a large radiated noise N to be radiated from the first power line portion 141 and the second power line portion 142. On the other hand, only a small power such as several tens of volts or several tens of amperes is applied to the maximum of the first control line portion 143 and the second control line portion 144 to which the control signal E1 is input. Therefore, if the large radiated noise N from the first power line portion 141 and the second power line portion 142 propagates to the first control line portion 143 and the second control line portion 144, the potential of the first control line portion 143 and the second control line portion 144 fluctuates greatly due to the influence of the radiated noise N. Correspondingly, the control signal E1 input to the gate electrode 113 is greatly disturbed.

[0071] For example, when the threshold voltage of the power semiconductor element 110 is 5V, in order to control the power semiconductor element 110 to the on state, a gate voltage of 5V or more needs to be applied to the gate electrode 113. For example, when a potential of 5V is applied to the first control line portion 143 and a potential of zero V is applied to the second control line portion 144, the potential difference between the first control line portion 143 and the second control line portion 144, that is, 5V, is input to the gate electrode 113, thereby controlling the state between the drain electrode 111 and the source electrode 112 to be conductive. However, if the potential of one or both of the first control line portion 143 and the second control line portion 144 fluctuates greatly due to the influence of the radiated noise N, the voltage input to the gate electrode 113 fluctuates greatly.

[0072] For example, in a state where 5V is applied to the first control line portion 143, if the potential of the second control line portion 144 to which 0V potential is applied changes to 2V due to the influence of the radiation noise N, the potential difference between the first control line portion 143 and the second control line portion 144 becomes 3V, which is lower than the threshold voltage of 5V. In this case, an erroneous operation occurs in which the state between the drain electrode 111 and the source electrode 112 is controlled to be in an insulating state, and the power semiconductor element 110 is accidentally controlled to be in an off state. Similarly, an erroneous operation occurs in the power semiconductor element 110 when the potential of the first control line portion 143 to which 5V is applied changes and decreases. On the contrary, there is also a case where, although potentials for turning off the power semiconductor element 110 are applied to the first control line portion 143 and the second control line portion 144, an erroneous operation occurs in which the power semiconductor element 110 is accidentally controlled to be in an on state due to the influence of the radiation noise N. In addition, depending on the magnitude of the radiation noise N, it is also possible to input a voltage higher than the breakdown voltage of the power semiconductor element 110 to the gate voltage.

[0073] On the other hand, in the power semiconductor module 5 according to the present embodiment, as Figure 5 shown, the first control line portion 43 and the second control line portion 44 are led out downward, opposite to the first power line portion 41 and the second power line portion 42. Figure 5 FIG. is a cross-sectional view schematically showing the power semiconductor module 5 according to the present embodiment, and the power semiconductor element 10 is schematically shown as a circuit diagram. As Figure 5 shown, the first control line portion 43 and the second control line portion 44 are led out to a region R2 on the side opposite to the region R1 where the first power line portion 41 and the second power line portion 42 are led out, with the heat sink 21, which is a shielding plate for shielding the radiation noise N, interposed therebetween. Therefore, the large radiation noise N radiated from the first power wiring portion and the second power wiring portion is shielded by the heat sink 21 and does not propagate to the first control line portion 43 and the second control line portion 44.

[0074] The radiation noise N radiated from the first power line portion 41 and the second power line portion 42 inside the housing 20 is blocked by the heat dissipation plate 21, and thus does not propagate to the first control line portion 43 and the second control line portion 44 on the back surface 21b of the heat dissipation plate 21. Since the first control line portion 43 and the second control line portion 44 are not arranged in the direction in which the radiation noise N radiated from the first power line portion 41 and the second power line portion 42 outside the housing 20 propagates, such radiation noise N does not propagate to the first control line portion 43 and the second control line portion 44 either. In this way, the first control line portion 43 and the second control line portion 44 are led out to the side opposite to the first power line portion 41 and the second power line portion 42 via the heat dissipation plate 21, and the heat dissipation plate 21 is used as a shielding plate, whereby it is possible to suppress the large radiation noise N from the first power line portion 41 and the second power line portion 42 from propagating to the first control line portion 43 and the second control line portion 44. As a result, it is possible to suppress the control signal E1 based on the potentials of the first control line portion 43 and the second control line portion 44 from fluctuating significantly due to the influence of the radiation noise N. As a result, it is possible to suppress the occurrence of malfunction such as a malfunction of the power semiconductor element 10 caused by the fluctuation of the control signal E1.

[0075] As Figure 5 shown, the first control line portion 43 includes a first extension portion 43P that extends from the opening H10a along the extension direction d1 of the through hole H10 in the path of the first control line portion 43 between the opening H10a of the through hole H10 on the surface 21a and the gate electrode 13. Similarly, the second control line portion 44 includes a second extension portion 44P that extends from the opening H10a along the extension direction d1 in parallel with the first control line portion 43 in the path of the second control line portion 44 between the opening H10a and the source electrode 12. The extension direction d1 may be a direction that intersects (orthogonal in one example) the surface 21a. The first power line portion 41 includes a portion 41P that extends from the drain electrode 11 along a direction d2 that intersects the extension direction d1 inside the housing 20. Similarly, the second power line portion 42 includes a portion 42P that extends from the source electrode 12 along the direction d2 inside the housing 20.

[0076] The portion 42P of the second power line portion 42 is an opposed portion that opposes the first extension portion 43P and the second extension portion 44P in the direction d2. The first extension portion 43P and the second extension portion 44P extend along the direction d2 in such a manner as to approach the opening H10a from the portion 42P of the second power line portion 42. In other words, the first extension portion 43P and the second extension portion 44P extend along the direction d2 in such a manner that the distance from the portion 42P of the second power line portion 42 in the direction d2 monotonically increases. Therefore, the first extension portion 43P and the second extension portion 44P can be said to be monotonic increase regions where the distance from the portion 42P of the second power line portion 42 in the direction d2 monotonically increases. The portion 41P of the first power line portion 41 can also be an opposed portion that opposes the first extension portion 43P and the second extension portion 44P in the direction d2.

[0077] As in the present embodiment, the first power line portion 41 and the second power line portion 42 can also be led out to the outside of the housing 20 via the top plate 22a. In this case, since the first control line portion 43 and the second control line portion 44 are led out from the side opposite to the first power line portion 41 and the second power line portion 42, it is possible to more effectively suppress the propagation of the radiation noise N from the first power line portion 41 and the second power line portion 42 to the first control line portion 43 and the second control line portion 44.

[0078] As in the present embodiment, the drain electrode 11 can also be arranged to face the surface 21a, the source electrode 12 and the gate electrode 13 can be arranged on the side opposite to the surface 21a with the drain electrode 11 interposed therebetween, and the through hole H10 can be formed at a position that does not overlap the source electrode 12 and the gate electrode 13 in a top view. In this case, it is possible to easily realize a structure in which the first control line portion 43 and the second control line portion 44 are led out to the region R2 on the back surface 21b of the heat sink 21 through the through hole H10.

[0079] As in the present embodiment, the first control line portion 43 and the second control line portion 44 can also be led out to the region R2 on the back surface 21b through the through hole H10. In this way, when the first control line portion 43 and the second control line portion 44 pass through the through hole H10 together, the distance between the first control line portion 43 and the second control line portion 44 becomes closer, and correspondingly, the area of the loop formed by the first control line portion 43 and the second control line portion 44 becomes smaller. In this way, if the area of the loop becomes smaller, the electromotive force generated when the electromagnetic wave (radiation noise N) links with the loop can be reduced. Thereby, the risk of generating a large conduction noise in the first control line portion 43 and the second control line portion 44 can be reduced.

[0080] The above has described one embodiment of the present disclosure, but the present disclosure is not limited to the above embodiment.

[0081] <Modification Example 1>

[0082] Figure 6 This is a cross-sectional view showing the power semiconductor module 5A of Modification 1. In the above-described embodiment, the power semiconductor element 10 is disposed on the surface 21a of the heat sink 21 with the gate electrode 13 facing upward. In contrast, in Modification 1, the power semiconductor element 10 is disposed on the surface 21a of the heat sink 21 with the gate electrode 13 facing downward. Thus, in the power semiconductor module 5A, the power semiconductor element 10 is disposed on the heat sink 21 in a state of being turned upside down. As a result, the source electrode 12 and the gate electrode 13 are arranged to face the surface 21a. The drain electrode 11 is disposed on the side opposite to the surface 21a with the source electrode 12 and the gate electrode 13 interposed therebetween.

[0083] In this structure, the through holes H10 formed in the insulating layer 31 and the heat sink 21 are disposed at positions that overlap the gate electrode 13 and the source electrode 12 in a plan view. The gate electrode 13 and the source electrode 12 are respectively connected to the conductive layers 32A and 32B that are electrically insulated from each other. Similar to the above-described embodiment, the conductive layer 34 may be integrated with the conductive layer 32A without being separated from the conductive layer 32A. In this case, the wire 41a for connecting the conductive layer 34 and the conductive layer 32A can be omitted. The first control line portion 43 and the second control line portion 44 respectively connected to the gate electrode 13 and the source electrode 12 are led out to the region R2 on the back surface 21b of the heat sink 21 through the lower through holes H10. Thus, if a structure in which the first control line portion 43 and the second control line portion 44 are directly led out from the lower through holes H10 is adopted, the distance from the gate electrode 13 and the source electrode 12 to the through holes H10 can be shortened as much as possible, and thus the portion of the first control line portion 43 and the second control line portion 44 that is exposed inside the housing 20 and through which the radiation noise N can propagate can be reduced as much as possible. Thereby, the risk of the radiation noise N propagating to the first control line portion 43 and the second control line portion 44 inside the housing 20 can be reduced.

[0084] <Modification 2>

[0085] Figure 7 This is a simplified cross-sectional view showing the power semiconductor module 5B of Modification 2. Figure 8 This is a plan view of the power semiconductor element 10 included in the power semiconductor module 5B as viewed from above. In the above-described embodiment, one through hole H10 is formed in the heat sink 21. In contrast, in Modification 2, a first through hole H11 and a second through hole H12 are formed in the heat sink 21A. As Figure 7 and Figure 8As shown, the first through hole H11 and the second through hole H12 are formed at different positions of the heat dissipation plate 21A in a plan view. The first control line portion 43 is led out to the region R2 on the back surface 21b through the first through hole H11. The second control line portion 44 is led out to the region R2 on the back surface 21b through the second through hole H12.

[0086] As Figure 8 shown, the first through hole H11 is formed at a position closer to the connection portion 43p of the first control line portion 43 to the gate electrode 13 than the connection portion 44p of the second control line portion 44 to the source electrode 12 in a plan view. For example, the first through hole H11 is formed at a position adjacent to the gate electrode 13 at the shortest distance in a plan view. The first control line portion 43 reaches the first through hole H11 from the connection portion 43p of the first control line portion 43 to the gate electrode 13 at the shortest distance. The second through hole H12 is formed at a position closer to the connection portion 44p of the second control line portion 44 to the source electrode 12 than the connection portion 43p of the first control line portion 43 to the gate electrode 13 in a plan view. The second through hole H12 is formed at a position adjacent to the source electrode 12 at the shortest distance in a plan view. The second control line portion 44 reaches the second through hole H12 from the connection portion 44p of the second control line portion 44 to the source electrode 12 at the shortest distance.

[0087] In this way, in the power semiconductor module 5B, the first control line portion 43 and the second control line portion 44 can reach the first through hole H11 and the second through hole H12 respectively at the shortest distance. Thereby, the portions of the first control line portion 43 and the second control line portion 44 exposed inside the housing 20A that can transmit the radiation noise N can be reduced as much as possible, and thus the risk of the radiation noise N being transmitted to the first control line portion 43 and the second control line portion 44 inside the housing 20A can be reduced.

[0088] <Modified Example 3>

[0089] Figure 9 is a cross-sectional view schematically showing the power semiconductor module 5C of Modified Example 3. As Figure 9 shown, in the power semiconductor module 5C, the first control line portion 43 and the second control line portion 44 respectively connected to the gate electrode 13 and the source electrode 12 of the power semiconductor element 10 are twisted together. The first control line portion 43 and the second control line portion 44 are led out to the lower side of the heat dissipation plate 21 through the through hole H10 in a twisted state from inside the housing 20.

[0090] Thus, when the first control line portion 43 and the second control line portion 44 are twisted, it functions in such a way that even if the radiation noise N from the first power line portion 41 and the second power line portion 42 is propagated to the first control line portion 43 and the second control line portion 44, the conducted noise generated in the first control line portion 43 and the second control line portion 44 cancels out the conducted noise generated in the twisted portion in front of them. Therefore, the risk of generating a large amount of conducted noise in the first control line portion 43 and the second control line portion 44 can be reduced.

[0091] <Modified Example 4>

[0092] Figure 10 is a cross-sectional view schematically showing the power semiconductor module 5D of Modified Example 4. As Figure 10 shown, the power semiconductor module 5D includes an electromagnetic shielding member 50 that surrounds the first control line portion 43 and the second control line portion 44 inside the housing 20. The electromagnetic shielding member 50 is a cylindrical member that extends between the gate electrode 13 and the source electrode 12 and the opening of the through-hole H10 on the surface 21a. The electromagnetic shielding member 50 is arranged to surround the first control line portion 43 and the second control line portion 44 inside the housing 20. The first control line portion 43 and the second control line portion 44 are led out from the through-hole H10 to below the heat sink 21 through the inside of the electromagnetic shielding member 50.

[0093] The electromagnetic shielding member 50 is configured to include a shielding layer capable of shielding the radiation noise N from the first power line portion 41 and the second power line portion 42. The electromagnetic shielding member 50 may be entirely composed of the shielding layer, or may be configured to include the shielding layer in a part thereof. As the shielding layer capable of shielding the radiation noise N, in addition to materials having conductivity, materials having magnetism can also be cited. Therefore, the shielding layer constituting the electromagnetic shielding member 50 may be composed of a material having magnetism instead of conductivity, or may be composed of a material containing both conductivity and magnetism. The electromagnetic shielding member 50 may be, for example, a conductive tube made of aluminum or copper. The electromagnetic shielding member 50 may be composed of a conductive thin film such as an aluminum foil or a copper foil, or may be a conductive cylindrical net woven with aluminum wires or copper wires. According to such a structure, the radiation noise N from the first power line portion 41 and the second power line portion 42 is shielded by the electromagnetic shielding member 50, so that the propagation of the radiation noise N to the first control line portion 43 and the second control line portion 44 inside the electromagnetic shielding member 50 can be suppressed.

[0094] <Modified Example 5>

[0095] Figure 11 is a cross-sectional view showing the power semiconductor module 5E of Modified Example 5. As Figure 11As shown, in the power semiconductor module 5E, the first control line portion 43 and the second control line portion 44 include a common-mode filter 60 capable of removing the common-mode component of the conducted noise conducted in the first control line portion 43 and the second control line portion 44. Conducted noise is electromagnetic noise transmitted in the conductors used for power input and output, and is generated by the switching operation of the power semiconductor element 10.

[0096] The common-mode filter 60 is disposed, for example, inside the through-hole H10 of the heat sink 21. That is, the common-mode filter 60 is disposed between the front surface 21a and the back surface 21b and is buried inside the heat sink 21. The first control line portion 43 includes a line L1 connecting the gate electrode 13 and the common-mode filter 60 inside the housing 20, the common-mode filter 60 inside the heat sink 21, and a line L2 connecting the common-mode filter 60 and the connection terminal 43b (see Figure 2 ) outside the housing 20. The second control line portion 44 includes a line L3 connecting the source electrode 12 and the common-mode filter 60 inside the housing 20, the common-mode filter 60 inside the heat sink 21, and a line L4 connecting the common-mode filter 60 and the connection terminal 44b (see Figure 2 ) outside the housing 20.

[0097] In the power semiconductor module 5E, since the common-mode component of the conducted noise that may be generated in the first control line portion 43 and the second control line portion 44 can be removed, the variation of the control signal E1 caused by the common-mode component can be suppressed. In addition, by disposing the common-mode filter 60 inside the through-hole H10, the radiation noise N can be suppressed from propagating from the first power line portion 41 and the second power line portion 42 to the first control line portion 43 and the second control line portion 44 via the common-mode filter 60.

[0098] The common-mode filter 60 does not need to be disposed inside the through-hole H10. For example, the common-mode filter 60 can be disposed on the front surface 21a or on the back surface 21b. When the common-mode filter 60 is disposed on the front surface 21a, the first control line portion 43 and the second control line portion 44 between the gate electrode 13 and the source electrode 12 and the common-mode filter 60 may also be twisted with each other. When the common-mode filter 60 is disposed on the front surface 21a, the first control line portion 43 and the second control line portion 44 between the gate electrode 13 and the source electrode 12 and the common-mode filter 60 on the front surface 21a may also be surrounded by an electromagnetic shielding member. The power semiconductor module 5E may also include a ferrite core instead of the common-mode filter 60. In this case, the first control line portion 43 and the second control line portion 44 may also penetrate straight through the annular ferrite core. Alternatively, the first control line portion 43 and the second control line portion 44 may be wound around the annular ferrite core or may form a common-mode choke coil.

[0099] <Modified Example 6>

[0100] Figure 12 A cross-sectional view showing the power semiconductor module 5F of Modified Example 6. As Figure 12 shown, in the power semiconductor module 5F, a transformer 70 capable of removing the common-mode component of the conducted noise conducted in the first control line portion 43 and the second control line portion 44 is connected to the first control line portion 43 and the second control line portion 44. The transformer 70 is disposed, for example, inside the through-hole H10 of the heat sink 21. That is, the transformer 70 is disposed between the front surface 21a and the back surface 21b and is buried inside the heat sink 21. The first control line portion 43 includes a wire L1 connecting the gate electrode 13 and the transformer 70 inside the housing 20, the transformer 70 inside the heat sink 21, and a wire L2 connecting the transformer 70 and the connection terminal 43b (see Figure 2 ) outside the housing 20. The second control line portion 44 includes a wire L3 connecting the source electrode 12 and the transformer 70 inside the housing 20, the transformer 70 inside the heat sink 21, and a wire L4 connecting the transformer 70 and the connection terminal 44b (see Figure 2 ) outside the housing 20.

[0101] In the power semiconductor module 5F, since the common-mode component of the conducted noise that may be generated in the first control line portion 43 and the second control line portion 44 can be removed, fluctuations in the control signal E1 caused by the common-mode component can be suppressed. In addition, since the transformer 70 is disposed inside the through-hole H10, the radiation noise N can be suppressed from propagating to the first control line portion 43 and the second control line portion 44 via the transformer 70. Further, if the transformer 70 is disposed inside the heat sink 21, the function of electrically insulating the inside and outside of the housing 20 can also be achieved.

[0102] The transformer 70 does not need to be disposed inside the through-hole H10. For example, the transformer 70 can be disposed on the front surface 21a or on the back surface 21b. When the transformer 70 is disposed on the front surface 21a, the first control line portion 43 and the second control line portion 44 between the gate electrode 13 and the source electrode 12 and the transformer 70 may also be twisted together. When the transformer 70 is disposed on the front surface 21a, the first control line portion 43 and the second control line portion 44 between the gate electrode 13 and the source electrode 12 and the transformer 70, and the transformer 70 on the front surface 21a may also be surrounded by an electromagnetic shielding member.

[0103] The present disclosure is not limited to the above examples and can be variously modified. In the above-described embodiments and various modifications, the case where the first power line portion and the second power line portion are led out from the upper top plate to the outside of the housing is illustrated. However, the first power line portion and the second power line portion may also be led out from the side side plate to the outside of the housing. In the above-described embodiments and various modifications, the case where the shape of the heat dissipation plate on which the semiconductor element is disposed is a flat plate shape is illustrated. However, the shape of the heat dissipation plate is not limited to the flat plate shape and may be other shapes (for example, U-shaped). The heat dissipation plate may also have cooling holes for allowing a refrigerant to pass through, which are separate from the through holes. In this case, the cooling holes may also be made of an insulating material such as resin. Heat dissipation fins for heat exchange with the refrigerant may also be formed on the heat dissipation plate. In this case, the heat dissipation fins may also be made of a material having a high thermal conductivity and a low conductivity (for example, graphite). The cover is not limited to a resin material and may be made of a conductive material such as a metal material.

[0104] Hereinafter, the gist of the present disclosure will be shown.

[0105] 〔1〕A power semiconductor module, wherein,

[0106] The above power semiconductor module includes:

[0107] A power semiconductor element having a first electrode, a second electrode, and a control electrode, and alternately switching conduction and non-conduction between the first electrode and the second electrode according to a control signal supplied to the control electrode;

[0108] A heat dissipation plate having a surface on which the power semiconductor element is disposed and a back surface opposite to the surface, and capable of dissipating heat from the power semiconductor element;

[0109] A first power line portion and a second power line portion, which are electrically connected to the first electrode and the second electrode, respectively, and transmit electric power between the first electrode and the second electrode;

[0110] A first control line portion, which is electrically connected to the control electrode and supplies the control signal to the control electrode; and

[0111] A second control line portion, which is electrically connected to the second electrode and provides a reference potential of the control signal,

[0112] The heat dissipation plate includes a shielding layer made of a material having at least one of electrical conductivity and magnetism,

[0113] The heat dissipation plate has at least one through hole penetrating between the surface and the back surface,

[0114] Having at least one through hole penetrating between the surface and the back surface,

[0115] Among the above-described first power line portion, the second power line portion, the first control line portion, and the second control line portion, only the first control line portion and the second control line portion are led out to the area on the back surface of the heat sink through the through hole.

[0116] 〔2〕The power semiconductor module according to 〔1〕, wherein

[0117] The first control line portion has a first monotonically increasing region that extends from the cross-section of the through hole and monotonically increases the distance between the first power line portion and the second power line portion in the direction from the control electrode toward the through hole.

[0118] The second control line portion has a second monotonically increasing region that extends from the cross-section of the through hole and monotonically increases the distance between the first power line portion and the second power line portion in the direction from the second electrode toward the through hole.

[0119] 〔3〕The power semiconductor module according to 〔1〕 or 〔2〕, wherein

[0120] A cover is provided, which covers the surface of the heat sink on which the power semiconductor element is placed.

[0121] The first power line portion and the second power line portion extend from the first electrode and the second electrode toward the cover and are led out to the outside of the area covered by the cover through the cover.

[0122] 〔4〕The power semiconductor module according to 〔3〕, wherein

[0123] The cover has a side wall portion and a top plate that faces the surface across the side wall portion.

[0124] The first power line portion and the second power line portion extend from the first electrode and the second electrode toward the top plate and are led out to the outside of the area covered by the cover through the top plate.

[0125] 〔5〕The power semiconductor module according to any one of 〔1〕 to 〔4〕, wherein

[0126] The first electrode is arranged to face the surface.

[0127] The second electrode and the control electrode are arranged on the side opposite to the surface with the first electrode therebetween.

[0128] At least one of the through holes is formed at a position that does not overlap with the second electrode and the control electrode when the heat sink is viewed from above.

[0129] 〔6〕The power semiconductor module according to any one of 〔1〕 to 〔4〕, wherein,

[0130] The second electrode and the control electrode are arranged to face the surface,

[0131] The first electrode is arranged on the side opposite to the surface with the second electrode and the control electrode therebetween.

[0132] At least one of the through holes is formed at a position overlapping the second electrode and the control electrode when the heat sink is viewed from above.

[0133] 〔7〕The power semiconductor module according to any one of 〔1〕 to 〔6〕, wherein,

[0134] The heat sink has one of the through holes,

[0135] The first control line portion and the second control line portion are led out to the region on the back surface through one of the through holes.

[0136] 〔8〕The power semiconductor module according to 〔7〕, wherein,

[0137] The first control line portion and the second control line portion are led out to the region on the back surface through one of the through holes in a state of being twisted together.

[0138] 〔9〕The power semiconductor module according to 〔7〕, wherein,

[0139] A cylindrical electromagnetic shielding member is further provided, and the cylindrical electromagnetic shielding member is arranged between the second electrode and the control electrode and the opening of one of the through holes on the surface so as to surround the first control line portion and the second control line portion, and includes a shielding layer made of a material having at least one of electrical conductivity and magnetism.

[0140] 〔10〕The power semiconductor module according to 〔7〕, wherein,

[0141] The first control line portion and the second control line portion include a common mode filter or a transformer capable of removing the common mode component of the conducted noise conducted in the first control line portion and the second control line portion,

[0142] The common mode filter or the transformer is arranged inside one of the through holes.

[0143] 〔11〕The power semiconductor module according to any one of 〔1〕 to 〔6〕, wherein,

[0144] The above heat dissipation plate has a first through hole and a second through hole formed at different positions on the above surface as the through holes.

[0145] The above first control line part is led out to the above area on the above back surface through the above first through hole.

[0146] The above second control line part is led out to the above area on the above back surface through the above second through hole.

[0147] 〔12〕A power conversion device, wherein,

[0148] The above power conversion device includes:

[0149] A power conversion part, having the power semiconductor module described in any one of 〔1〕~〔11〕, which converts the form of the first power provided by the power supply into the form of the second power required by the load device; and

[0150] A control part, which sends the above control signal to the above power semiconductor module.

[0151] Explanation of reference numerals

[0152] 1…Power conversion device; 2…Switching circuit (power conversion part); 3…Control substrate (control part); 5, 5A, 5B, 5C, 5D, 5E, 5F…Power semiconductor module; 10, 10A, 10B, 10C, 10D, 10E, 10F…Power semiconductor element; 11…Drain electrode (first electrode); 12…Source electrode (second electrode); 13…Gate electrode (control electrode); 20, 20A…Housing; 21, 21A…Heat dissipation plate; 21a…Surface; 21b…Back surface; 21c, H10…Through hole; 22…Cover; 22a…Top plate; 22b…Side plate (side wall part); 41…First power line part; 41P…Part; 42…Second power line part; 42P…Part (opposing part); 43…First control line part; 43P…First extension part; 44…Second control line part; 44P…Second extension part; 50…Electromagnetic shielding part; 60…Common mode filter; 70…Transformer; B…Power supply; E1…Control signal; E2…Power; H11…First through hole; H12…Second through hole; M…Load device; N…Radiated noise; R1, R2…Area; d1…Extension direction; d2…Direction.

Claims

1. A power semiconductor module, wherein, the power semiconductor module includes: a power semiconductor element having a first electrode, a second electrode, and a control electrode, and alternately switching conduction and non-conduction between the first electrode and the second electrode according to a control signal supplied to the control electrode; a heat sink having a surface on which the power semiconductor element is disposed and a back surface opposite to the surface, and capable of dissipating heat from the power semiconductor element; a first power line portion and a second power line portion respectively electrically connected to the first electrode and the second electrode, and transmitting power between the first electrode and the second electrode; a first control line portion electrically connected to the control electrode and supplying the control signal to the control electrode; and a second control line portion electrically connected to the second electrode and providing a reference potential of the control signal, the heat sink includes a shielding layer made of a material having at least one of electrical conductivity and magnetism, the heat sink has at least one through hole penetrating between the surface and the back surface, among the first power line portion, the second power line portion, the first control line portion, and the second control line portion, only the first control line portion and the second control line portion are led out to a region on the back surface of the heat sink through the through hole.

2. The power semiconductor module according to claim 1, wherein, the first control line portion has a first monotonically increasing region that extends from a cross section of the through hole and monotonically increases the distance between the first power line portion and the second power line portion in a direction from the control electrode toward the through hole, the second control line portion has a second monotonically increasing region that extends from a cross section of the through hole and monotonically increases the distance between the first power line portion and the second power line portion in a direction from the second electrode toward the through hole.

3. The power semiconductor module according to claim 1, wherein, a cover is provided that covers the surface of the heat sink on which the power semiconductor element is placed, the first power line portion and the second power line portion extend from the first electrode and the second electrode toward the cover and are led out to the outside of the region covered by the cover via the cover.

4. The power semiconductor module according to claim 3, wherein, the cover has a side wall portion and a top plate facing the surface across the side wall portion, the first power line portion and the second power line portion extend from the first electrode and the second electrode toward the top plate and are led out to the outside of the region covered by the cover via the top plate.

5. The power semiconductor module according to claim 1, wherein, the first electrode is arranged to face the surface, the second electrode and the control electrode are arranged on the side opposite to the surface with the first electrode therebetween, at least one of the through holes is formed at a position that does not overlap with the second electrode and the control electrode when the heat sink is viewed from above.

6. The power semiconductor module according to claim 1, wherein, The second electrode and the control electrode are arranged to face the surface, The first electrode is arranged on the side opposite to the surface with the second electrode and the control electrode therebetween, At least one of the through holes is formed at a position overlapping with the second electrode and the control electrode when the heat sink is viewed from above.

7. The power semiconductor module according to claim 1, wherein, The heat sink has one of the through holes, The first control line portion and the second control line portion are led out to the area on the back surface through one of the through holes.

8. The power semiconductor module according to claim 7, wherein, The first control line portion and the second control line portion are led out to the area on the back surface through one of the through holes in a state of being twisted with each other.

9. The power semiconductor module according to claim 7, wherein, A cylindrical electromagnetic shielding member is further provided, and the cylindrical electromagnetic shielding member is arranged to surround the first control line portion and the second control line portion between the second electrode and the control electrode and an opening of one of the through holes on the surface, and includes a shielding layer made of a material having at least one of electrical conductivity and magnetism.

10. The power semiconductor module according to claim 7, wherein, The first control line portion and the second control line portion include a common mode filter or a transformer capable of removing a common mode component of conduction noise conducted in the first control line portion and the second control line portion, The common mode filter or the transformer is arranged inside one of the through holes.

11. The power semiconductor module according to claim 1, wherein, The heat sink has a first through hole and a second through hole formed at different positions on the surface as the through holes, The first control line portion is led out to the area on the back surface through the first through hole, The second control line portion is led out to the area on the back surface through the second through hole.

12. A power conversion device, wherein, The power conversion device includes: A power conversion unit having the power semiconductor module according to any one of claims 1 to 11, which converts the form of the first power supplied from a power source into the form of the second power required by a load device; and A control unit that sends the control signal to the power semiconductor module.

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