Positive photoresist as well as preparation method and application thereof

Abstract

The invention relates to a positive photoresist as well as a preparation method and application thereof. The positive photoresist comprises phenolic resin, a photosensitizer and a modified coupling agent; the modified coupling agent comprises an amino silane coupling agent modified by an isocyanate modifier. According to the positive photoresist, the specific modified coupling agent is adopted, so that the positive photoresist has excellent acid resistance and storage stability on the basis of good adhesive force, and textures with high etching depth and obvious visual effect can be formed on a glass plate.

Description

Technical Field

[0001] The present invention relates to the technical field of photoresists, and in particular, to a positive photoresist, a preparation method thereof, and an application thereof. Background Art

[0002] A photoresist, also known as a photo-resist, is a light-sensitive liquid mixture composed of a photosensitive resin, a photosensitizer, a solvent, etc. After being irradiated with light, a photochemical reaction can quickly occur in the exposed area, causing obvious changes in the physical properties of this material, especially solubility, affinity, etc. After appropriate solvent treatment, the soluble part is dissolved away to obtain the required image. With the increasing requirements for high density and high precision in the microfabrication technology in the electronic information industry, photoresists based on pattern formation and pattern protection are receiving more and more attention. During the preparation of electronic components, the photoresist must be developable to form a pattern and have good adhesion to the glass, ITO or metal surface to avoid peeling problems.

[0003] In the prior art, epoxy coupling agents are often used in photoresists to increase adhesion, but the obtained photoresist has poor acid resistance, and the photoresist is likely to fall off from the glass surface in an acidic etching solution and cannot continue to play a protective role; at the same time, the etching depth range cannot be increased, so that textures with large depth and obvious visual effects cannot be formed on the glass surface. There are also photoresists that use amino-silane or ureido-silane coupling agents to improve adhesion, but the reactions of these two coupling agents are strong and the storage stability is poor.

[0004] Therefore, how to provide a positive photoresist that can meet the requirements of good acid resistance and storage stability has become an urgent problem to be solved at present. Summary of the Invention

[0005] To solve the above technical problems, the present invention provides a positive photoresist, a preparation method thereof, and an application thereof. The positive photoresist uses a specific modified coupling agent, which can enable the positive photoresist to have excellent acid resistance and storage stability on the basis of good adhesion, and further is beneficial to forming textures with high etching depth and obvious visual effects on the glass plate.

[0006] To achieve this purpose, the present invention adopts the following technical solutions:

[0007] In a first aspect, the present invention provides a positive photoresist, which includes a phenolic resin, a photosensitizer, and a modified coupling agent;

[0008] The modified coupling agent includes an amino-silane coupling agent modified by an isocyanate-based modifier.

[0009] By compounding an amino-silane coupling agent modified with an isocyanate modifier, a phenolic resin, and a photosensitizer, the resulting positive photoresist of the present invention not only has good adhesion, but also has good development effect, excellent acid resistance, and storage stability. It can be well used for glass etching. During the etching of glass with an acidic etching solution, no additional protection of the etched surface of the glass is required. At the same time, it can also be stably immersed in the acidic etching solution for a long time, which is beneficial to enhancing the etching depth on the glass surface, making the glass etching effect more obvious, and further facilitating the formation of textures with high etching depth and obvious visual effects on the glass plate.

[0010] Preferably, the isocyanate modifier includes ethyl isocyanate acrylate.

[0011] Preferably, the molar ratio of -NCO in the isocyanate modifier to the nitrogen atom in the amino-silane coupling agent is 1:1.

[0012] Preferably, the modification of the amino-silane coupling agent is carried out in a solvent carrier.

[0013] Preferably, the solvent carrier includes any one or a combination of at least two of toluene, xylene, mesitylene, ethyl acetate, or butyl acetate.

[0014] Preferably, the specific preparation method of the modified coupling agent of the present invention includes the following steps:

[0015] In a solvent carrier, an isocyanate modifier and an amino-silane coupling agent are added so that the molar ratio of -NCO in the isocyanate modifier to the nitrogen atom in the amino-silane coupling agent is 1:1 to obtain the modified coupling agent.

[0016] Preferably, the amino-silane coupling agent can be any one or a combination of at least two of KH-540, Evonik 1122, Shin-Etsu KBM-603, diethylenetriaminepropyltrimethoxysilane, or 3-(phenylamino)propyltrimethoxysilane.

[0017] Preferably, by weight, the positive photoresist includes the following components:

[0018] Phenolic resin 6-15 parts by weight;

[0019] Photosensitizer 1-3 parts by weight;

[0020] Modified coupling agent 0.5-3 parts by weight.

[0021] In the positive photoresist provided by the present invention, the content of phenolic resin can be 6 parts by weight, 7 parts by weight, 8 parts by weight, 9 parts by weight, 10 parts by weight, 11 parts by weight, 12 parts by weight, 13 parts by weight, 14 parts by weight or 15 parts by weight, as well as specific point values between the above point values. Due to space limitations and for the sake of simplicity, the present invention does not exhaustively list the specific point values included in the above range.

[0022] The content of photosensitizer can be 1 part by weight, 1.2 parts by weight, 1.5 parts by weight, 1.8 parts by weight, 2 parts by weight, 2.2 parts by weight, 2.5 parts by weight, 2.8 parts by weight or 3 parts by weight, as well as specific point values between the above point values. Due to space limitations and for the sake of simplicity, the present invention does not exhaustively list the specific point values included in the above range.

[0023] The content of modified coupling agent can be 0.5 part by weight, 0.8 part by weight, 1 part by weight, 1.2 parts by weight, 1.5 parts by weight, 1.8 parts by weight, 2 parts by weight, 2.2 parts by weight, 2.5 parts by weight, 2.8 parts by weight or 3 parts by weight, as well as specific point values between the above point values. Due to space limitations and for the sake of simplicity, the present invention does not exhaustively list the specific point values included in the above range.

[0024] In the present invention, the content of the modified coupling agent is further preferably 1-2 parts by weight. At this time, the obtained positive photoresist has more excellent acid resistance, which can reach 9 min. In the actual production process, when the content of the modified coupling agent is higher than 3 parts by weight, its acid resistance does not increase significantly.

[0025] Preferably, the phenolic resin includes low molecular weight phenolic resin and / or high molecular weight phenolic resin.

[0026] Preferably, the phenolic resin is a combination of low molecular weight phenolic resin and high molecular weight phenolic resin.

[0027] When the phenolic resin in the present invention is preferably a combination of low molecular weight phenolic resin and high molecular weight phenolic resin, the two can play a synergistic role, enabling the obtained positive photoresist to have excellent acid resistance (higher than 5 min) and produce a suitable alkaline dissolution rate (ADR) to effectively improve its development ability.

[0028] Preferably, the weight average molecular weight of the low molecular weight phenolic resin is 2000-5000. For example, it can be 2000, 2500, 3000, 3500, 4000, 4500 or 5000, as well as specific point values between the above point values. Due to space limitations and for the sake of simplicity, the present invention does not exhaustively list the specific point values included in the above range.

[0029] Preferably, the content of the low molecular weight phenolic resin is 1-5 parts by weight, for example, it can be 1 part by weight, 1.5 parts by weight, 2 parts by weight, 2.5 parts by weight, 3 parts by weight, 3.5 parts by weight, 4 parts by weight, 4.5 parts by weight or 5 parts by weight, as well as the specific point values between the above point values. Due to space limitations and for the sake of simplicity, the present invention does not exhaustively list the specific point values included in the above range.

[0030] In the present invention, when the content of the low molecular weight phenolic resin is too low, the acid resistance of the resulting positive photoresist will slightly decrease; when its content is too high, overdevelopment is likely to occur, and the acid resistance of the resulting positive photoresist will significantly decrease.

[0031] Preferably, the weight average molecular weight of the high molecular weight phenolic resin is 15,000-20,000, for example, it can be 15,000, 15,500, 16,000, 16,500, 17,000, 17,500, 18,000, 18,500, 19,000, 19,500 or 20,000, as well as the specific point values between the above point values. Due to space limitations and for the sake of simplicity, the present invention does not exhaustively list the specific point values included in the above range.

[0032] Preferably, the content of the high molecular weight phenolic resin is 5-10 parts by weight, for example, it can be 5 parts by weight, 5.5 parts by weight, 6 parts by weight, 6.5 parts by weight, 7 parts by weight, 7.5 parts by weight, 8 parts by weight, 8.5 parts by weight, 9 parts by weight, 9.5 parts by weight or 10 parts by weight, as well as the specific point values between the above point values. Due to space limitations and for the sake of simplicity, the present invention does not exhaustively list the specific point values included in the above range.

[0033] In the present invention, when the total weight of the phenolic resin remains unchanged, the mass ratio of the low molecular weight phenolic resin to the high molecular weight phenolic resin it contains is further preferably (0.4-1):1. At this time, the acid resistance of the resulting positive photoresist is better. When the mass ratio of the two is lower than 0.4:1 or higher than 1:1, although the ADR can be in the appropriate range of 100-500 Å / sec, its acid resistance will significantly decrease.

[0034] Preferably, the photosensitizer includes diazonaphthoquinone compounds.

[0035] Preferably, the diazonaphthoquinone compounds include any one or a combination of at least two of 2-diazo-1-naphthoquinone-5-sulfonyl chloride, 2,3,4,4'-tetrahydroxybenzophenone-2,1,5-diazonaphthoquinone sulfonate (PAC-435) or 2,3,4-trihydroxybenzophenone-2,1,5-diazonaphthoquinone sulfonate.

[0036] Preferably, the content of the photosensitizer is 15-30% of the mass of the phenolic resin. For example, it can be 15%, 16%, 17%, 18%, 19%, 20%, 22%, 25%, 28% or 30%, as well as the specific point values between the above point values. Due to space limitations and for the sake of simplicity, the present invention does not exhaustively list the specific point values included in the scope.

[0037] In the present invention, the addition of a specific content of the photosensitizer can make the performance of the positive photoresist better. When the content of the photosensitizer is less than 15% of the mass of the phenolic resin, the dissolution rate during development is low; when the content of the photosensitizer is higher than 30% of the mass of the phenolic resin, the photosensitizer cannot be dissolved.

[0038] Preferably, the positive photoresist further includes an organic solvent.

[0039] Preferably, the organic solvent includes any one or a combination of at least two of propylene glycol monomethyl ether acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether, triethylene glycol dimethyl ether, chloroform, xylene, ethyl lactate, benzyl alcohol or ethyl acetate.

[0040] Preferably, the content of the organic solvent is 35-65 parts by weight. For example, it can be 35 parts by weight, 40 parts by weight, 45 parts by weight, 50 parts by weight, 55 parts by weight, 60 parts by weight or 65 parts by weight, as well as the specific point values between the above point values. Due to space limitations and for the sake of simplicity, the present invention does not exhaustively list the specific point values included in the scope.

[0041] Preferably, the positive photoresist further includes other additives.

[0042] Preferably, the other additives include any one or a combination of at least two of a leveling agent, an antifoaming agent, an ultraviolet absorber or a crosslinking agent.

[0043] Preferably, the leveling agent includes any one or a combination of at least two of an acrylic leveling agent, a silicone leveling agent or a fluorine-containing leveling agent.

[0044] Preferably, the acrylic leveling agent includes any one or a combination of at least two of acrylic acid, methacrylic acid, an acrylic ester leveling agent or a modified acrylic leveling agent.

[0045] Preferably, the silicone leveling agent includes any one or a combination of at least two of polydimethylsiloxane, an alkyl-modified silicone or an alkyl-modified siloxane.

[0046] Preferably, the fluorine-containing leveling agent includes any one or a combination of at least two of an aqueous fluorine-containing leveling agent, a polyacrylic acid fluorine ester leveling agent or a fluorine-containing acrylic ester leveling agent.

[0047] Preferably, the defoamer includes any one or a combination of at least two of silicone defoamers, polyether defoamers, or polyether-modified polysiloxane defoamers.

[0048] Preferably, the ultraviolet absorber includes any one or a combination of at least two of 2-(2'-hydroxy-5'-methylphenyl) benzotriazole, phenyl salicylate, or 2,4-dihydroxybenzophenone.

[0049] Preferably, the crosslinking agent includes Cymel-300 and / or Cymel-303.

[0050] During the production application process, the specific types of other additives can be reasonably selected to meet the requirements of actual production applications.

[0051] Preferably, the content of the other additives is 0.01-0.05 parts by weight, such as 0.01 part by weight, 0.015 part by weight, 0.02 part by weight, 0.025 part by weight, 0.03 part by weight, 0.035 part by weight, 0.04 part by weight, 0.045 part by weight, or 0.05 part by weight, as well as the specific point values between the above point values. For the sake of brevity and limited space, the specific point values included in the scope of the present invention are not exhaustively listed herein.

[0052] In a second aspect, the present invention provides a method for preparing a positive photoresist as described in the first aspect, and the preparation method includes the following steps:

[0053] Mix components including phenolic resin, photosensitizer, and modified coupling agent, and optionally organic solvent and other additives to obtain the positive photoresist.

[0054] In a third aspect, the present invention provides a glass part with texture, and the glass part includes the positive photoresist as described in the first aspect.

[0055] Preferably, coat the positive photoresist on the surface of the glass plate, first perform pre-baking, then expose it, wash it after development, and then perform hard baking to obtain the glass part with texture.

[0056] Preferably, the coating method includes spraying and / or scraping.

[0057] Preferably, the temperature in the pre-baking is 80-100 °C (such as 80 °C, 82 °C, 84 °C, 86 °C, 88 °C, 90 °C, 92 °C, 94 °C, 96 °C, 98 °C, or 100 °C, etc.), and the time is 5-10 min (5 min, 6 min, 7 min, 8 min, 9 min, or 10 min, etc.).

[0058] Preferably, the temperature in the hard bake is 150 - 180 °C (such as 150 °C, 155 °C, 160 °C, 165 °C, 170 °C, 175 °C or 180 °C, etc.), and the time is 30 min.

[0059] The preparation method of the positive photoresist provided by the present invention is simple, easy to operate, highly practical, and conducive to industrial production.

[0060] Fourthly, the present invention provides an application of a glass piece with texture as described in the third aspect in electronic products.

[0061] Compared with the prior art, the present invention has at least the following beneficial effects:

[0062] (1) By compounding an amino-silane coupling agent modified with an isocyanate modifier with phenolic resin and a photosensitizer, the positive photoresist obtained by the present invention can not only have good adhesion, but also have good development effect, more excellent acid resistance and storage stability on the basis of ensuring good adhesion. It can be well applied to glass etching, and during the process of etching glass with an acidic etching solution, there is no need for additional protection of the etched surface of the glass, and at the same time, it can also be stably in the acidic etching solution for a long time. At the same time, the preparation method of the positive photoresist of the present invention is simple, easy to operate, highly practical, and conducive to industrial production.

[0063] (2) Further, by optimizing the types and contents of phenolic resin and modified coupling agent, the present invention can significantly improve the development quality (no overdevelopment), acid resistance (higher than 5 min) and storage stability (no precipitation) of the obtained positive photoresist. Detailed Embodiments

[0064] To facilitate the understanding of the present invention, the following examples are listed. Those skilled in the art should understand that the examples are only for helping to understand the present invention and should not be regarded as specific limitations on the present invention.

[0065] Unless otherwise specified, the raw materials and reagents used in the following examples, comparative examples and application examples are all commercially available. Some raw material information is as follows:

[0066] High molecular weight phenolic resin: NT31B15G purchased from Asahi Organic Materials Co., Ltd., Japan;

[0067] Low molecular weight phenolic resin: NT4080G purchased from Asahi Organic Materials Co., Ltd., Japan;

[0068] Leveling agent: BYK-361N purchased from BYK, Germany;

[0069] Amino-silane coupling agent is KH-540;

[0070] Epoxy coupling agent: Purchased from Shin-Etsu KBM-403, Japan.

[0071] Example 1

[0072] This example provides a positive photoresist, and its specific preparation method includes the following steps:

[0073] Mix 40 parts by weight of propylene glycol monomethyl ether acetate, 7 parts by weight of NT31B15G, 3 parts by weight of NT4080G, 2 parts by weight of PAC-435, 1 part by weight of modified coupling agent, and 0.02 part by weight of BYK-361N to obtain the positive photoresist.

[0074] The preparation method of the modified coupling agent includes the following steps:

[0075] In 310 mL of xylene, add 140 g of isocyanate acrylate ethyl ester, and slowly add amino silane coupling agent (KH-540) so that the molar ratio of -NCO in isocyanate acrylate ethyl ester to the nitrogen atom in KH-540 is 1:1 to obtain the modified coupling agent.

[0076] Example 2

[0077] This example provides a positive photoresist, and its specific preparation method includes the following steps:

[0078] Mix 65 parts by weight of ethylene glycol monomethyl ether acetate, 5 parts by weight of NT31B15G, 5 parts by weight of NT4080G, 1.5 parts by weight of 2-diazo-1-naphthoquinone-5-sulfonyl chloride, 1 part by weight of modified coupling agent, and 0.01 part by weight of BYK-361N to obtain the positive photoresist.

[0079] The preparation method of the modified coupling agent includes the following steps:

[0080] In 310 mL of mesitylene, add 140 g of isocyanate acrylate ethyl ester, and slowly add amino silane coupling agent (Evonik 1122) so that the molar ratio of -NCO in isocyanate acrylate ethyl ester to the nitrogen atom in Evonik 1122 is 1:1 to obtain the modified coupling agent.

[0081] Example 3

[0082] This example provides a positive photoresist, and its specific preparation method includes the following steps:

[0083] Mix 35 parts by weight of triethylene glycol dimethyl ether, 10 parts by weight of NT31B15G, 1 part by weight of NT4080G, 3 parts by weight of 2,3,4-trihydroxybenzophenone-2,1,5-diazo naphthoquinone sulfonate, 3 parts by weight of modified coupling agent, and 0.05 part by weight of BYK-361N to obtain the positive photoresist.

[0084] The preparation method of the modified coupling agent comprises the following steps:

[0085] In 310 mL of ethyl acetate, 140 g of ethyl isocyanate acrylate is added, and the amino silane coupling agent (KH-540) is slowly added so that the molar ratio of -NCO in ethyl isocyanate acrylate to the nitrogen atom in KH-540 is 1:1, thereby obtaining the modified coupling agent.

[0086] Example 4

[0087] This example provides a positive photoresist, the difference from Example 1 being only that the content of the modified coupling agent is adjusted from 1 part by weight to 2 parts by weight, and the other components, contents and preparation methods are the same as those in Example 1.

[0088] Example 5

[0089] This example provides a positive photoresist, the difference from Example 1 being only that the content of the modified coupling agent is adjusted from 1 part by weight to 3 parts by weight, and the other components, contents and preparation methods are the same as those in Example 1.

[0090] Example 6

[0091] This example provides a positive photoresist, the difference from Example 1 being only that the content of the modified coupling agent is adjusted from 1 part by weight to 0.5 part by weight, and the other components, contents and preparation methods are the same as those in Example 1.

[0092] Example 7

[0093] This example provides a positive photoresist, the difference from Example 1 being only that NT4080G is not added, and the content of NT31B15G is adjusted from 7 parts by weight to 10 parts by weight, and the other components, contents and preparation methods are the same as those in Example 1.

[0094] Example 8

[0095] This example provides a positive photoresist, the difference from Example 1 being only that NT31B15G is not added, and the content of NT4080G is adjusted from 3 parts by weight to 10 parts by weight, and the other components, contents and preparation methods are the same as those in Example 1.

[0096] Example 9

[0097] This example provides a positive photoresist, the difference from Example 1 being that the content of NT31B15G is adjusted from 7 parts by weight to 9.5 parts by weight, and the content of NT4080G is adjusted from 3 parts by weight to 0.5 part by weight, and the other components, contents and preparation methods are the same as those in Example 1.

[0098] Example 10

[0099] This example provides a positive photoresist, which is different from Example 1 in that the content of NT31B15G is adjusted from 7 parts by weight to 4 parts by weight, and the content of NT4080G is adjusted from 3 parts by weight to 6 parts by weight. The other components, contents, and preparation methods are the same as those in Example 1.

[0100] Comparative Example 1

[0101] This comparative example provides a positive photoresist, which is different from Example 1 only in that the modified coupling agent is not added. The other components, contents, and preparation methods are the same as those in Example 1.

[0102] Comparative Example 2

[0103] This comparative example provides a positive photoresist, which is different from Example 1 only in that the modified coupling agent is replaced with an equal mass of epoxy coupling agent (KBM-403). The other components, contents, and preparation methods are the same as those in Example 1.

[0104] Comparative Example 3

[0105] This comparative example provides a positive photoresist, which is different from Example 1 only in that the modified coupling agent is replaced with an equal mass of silane coupling agent (KH-540). The other components, contents, and preparation methods are the same as those in Example 1.

[0106] Application Examples 1-10 and Comparative Application Examples 1-3

[0107] The positive photoresists obtained in Examples 1-10 and Comparative Examples 1-3 were coated on the surface of a glass plate by spraying. First, pre-baking was carried out (pre-baking at 100 °C for 5 min), then it was exposed, developed and washed, and then hard-baked (hard-baked at 160 °C for 30 min) to obtain the corresponding glass parts with textures.

[0108] The positive photoresists obtained in the above Examples 1-10 and Comparative Examples 1-3 were subjected to performance tests. The test methods / standards are as follows:

[0109] (1) Acid resistance test: The glass parts with textures obtained in Application Examples 1-10 and Comparative Application Examples 1-3 were immersed in an acid solution at 25 °C, and the time for the texture pattern to fall off the glass was observed. The acid solution was 5% HF;

[0110] (2) Storage stability test: The positive photoresist was placed at 25 °C for 24 h and then observed whether precipitation occurred.

[0111] The test results are shown in Table 1.

[0112] Table 1

[0113] Developing quality Acid resistance (min) Storage stability Example 1 OK 6 Stable Example 2 OK 8 Stable Example 3 OK 9 Stable Example 4 OK 9 Stable Example 5 OK 9 Stable Example 6 OK 4 Stable Example 7 OK 5 Stable Example 8 Overdevelopment 4 Stable Example 9 OK 5.5 Stable Example 10 Overdevelopment 4 Stable Comparative Example 1 OK 3 Stable Comparative Example 2 OK 4 Stable Comparative Example 3 Unable to develop / Precipitation occurs

[0114] It can be seen from the test results that:

[0115] (1) By comparing Example 1 with Examples 4 - 6, it can be seen that by further optimizing the content of the modified coupling agent, the positive photoresist obtained by the present invention has more excellent acid resistance, which can reach 9 min.

[0116] (2) By comparing Example 1 with Examples 7 and 8, it can be seen that when the phenolic resin is further optimized to a combination of low - molecular - weight phenolic resin and high - molecular - weight phenolic resin in the present invention, the two can play a synergistic role to obtain a positive photoresist with better acid resistance. When either one is missing, the acid resistance of the obtained positive photoresist will be reduced.

[0117] (3) By comparing Example 1 with Examples 9 and 10, it can be seen that when the content of the phenolic resin is fixed, when the content of the low - molecular - weight phenolic resin is too low, the acid resistance of the obtained positive photoresist will decrease slightly; while when its content is too high, there will be an over - development phenomenon, and the acid resistance of the obtained positive photoresist is significantly reduced, indicating that by further optimizing the mass ratio of the low - molecular - weight phenolic resin and the high - molecular - weight phenolic resin, a positive photoresist with better acid resistance can be obtained.

[0118] (4) By comparing Example 1 with Comparative Example 1, it can be seen that the addition of the modified coupling agent in the present invention can significantly improve the acid resistance of the obtained positive photoresist.

[0119] (5) By comparing Example 1 with Comparative Examples 2 and 3, it can be seen that the addition of the amino - silane coupling agent modified by the specific isocyanate - type modifier in the present invention can significantly improve the acid resistance of the obtained positive photoresist on the basis of ensuring good development effect and stable performance.

[0120] In summary, the positive photoresist provided by the present invention not only has a good development effect, but also has more excellent acid resistance and storage stability on the basis of ensuring good adhesion. Further, by optimizing the types and contents of the phenolic resin and the modified coupling agent, the development quality (without over - development), acid resistance (higher than 5 min, up to 9 min at most) and storage stability (no precipitation) of the obtained positive photoresist can be significantly improved.

[0121] The applicant declares that the above description is only a specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by any person skilled in the art within the technical scope disclosed by the present invention fall within the protection scope and the disclosure scope of the present invention.

Claims

1. A positive photoresist, characterized in that, The positive photoresist comprises a phenolic resin, a photosensitizer and a modified coupling agent; The modified coupling agent comprises an amino-silane coupling agent modified by an isocyanate modifier.

2. The positive photoresist according to claim 1, characterized in that, The isocyanate modifier comprises ethyl isocyanate acrylate; Preferably, the molar ratio of -NCO in the isocyanate modifier to the nitrogen atom in the amino-silane coupling agent is 1:1; Preferably, the modification of the amino-silane coupling agent is carried out in a solvent carrier; Preferably, the solvent carrier comprises any one or a combination of at least two of toluene, xylene, mesitylene, ethyl acetate or butyl acetate.

3. The positive photoresist according to claim 1 or 2, characterized in that, By weight, the positive photoresist comprises the following components: 6-15 parts by weight of phenolic resin; 1-3 parts by weight of photosensitizer; 0.5-3 parts by weight of modified coupling agent.

4. The positive photoresist according to any one of claims 1-3, characterized in that, The phenolic resin comprises a low molecular weight phenolic resin and / or a high molecular weight phenolic resin; Preferably, the phenolic resin is a combination of a low molecular weight phenolic resin and a high molecular weight phenolic resin; Preferably, the weight average molecular weight of the low molecular weight phenolic resin is 2000-5000; Preferably, the content of the low molecular weight phenolic resin is 1-5 parts by weight; Preferably, the weight average molecular weight of the high molecular weight phenolic resin is 15000-20000; Preferably, the content of the high molecular weight phenolic resin is 5-10 parts by weight.

5. The positive photoresist according to any one of claims 1-4, characterized in that, The photosensitizer comprises a diazonaphthoquinone compound; Preferably, the diazonaphthoquinone compound comprises any one or a combination of at least two of 2-diazo-1-naphthoquinone-5-sulfonyl chloride, 2,3,4,4'-tetrahydroxybenzophenone-2,1,5-diazonaphthoquinone sulfonate or 2,3,4-trihydroxybenzophenone-2,1,5-diazonaphthoquinone sulfonate; Preferably, the content of the photosensitizer is 15-30% of the mass of the phenolic resin.

6. The positive photoresist according to any one of claims 1-5, characterized in that, The positive photoresist further comprises an organic solvent; Preferably, the organic solvent comprises any one or a combination of at least two of propylene glycol monomethyl ether acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether, triethylene glycol dimethyl ether, chloroform, xylene, ethyl lactate, benzyl alcohol or ethyl acetate; Preferably, the content of the organic solvent is 35-65 parts by weight.

7. The positive photoresist according to any one of claims 1-6, characterized in that, The positive photoresist further comprises other additives; Preferably, the other additives comprise any one or a combination of at least two of a leveling agent, an antifoaming agent, an ultraviolet absorber or a crosslinking agent; Preferably, the leveling agent comprises any one or a combination of at least two of an acrylic leveling agent, a silicone leveling agent or a fluorine-containing leveling agent; Preferably, the content of the other additives is 0.01-0.05 parts by weight.

8. A method for preparing a positive photoresist according to any one of claims 1-7, characterized in that, The preparation method comprises the following steps: Mix the components including the phenolic resin, the photosensitizer and the modified coupling agent, and optionally the organic solvent and other additives, to obtain the positive photoresist.

9. A textured glass piece, characterized in that, The glass part comprises the positive photoresist according to any one of claims 1-7.

10. Use of a glass part with texture as described in claim 9 in an electronic product.