Heat dissipation and electromagnetic shielding packaging structure and manufacturing method thereof

Abstract

The invention provides a heat dissipation and electromagnetic shielding packaging structure and a manufacturing method thereof, the heat dissipation and electromagnetic shielding packaging structure comprises a substrate, chips, a plastic package body, a high thermal conductivity interface layer and a metal shielding layer, the plurality of chips are inversely arranged on the upper surface of the substrate, the plastic package body covers the substrate and wraps all the chips, the high thermal conductivity interface layer wraps the top surface and the side surface of the plastic package body, and the metal shielding layer covers the top surface and the side surface of the plastic package body. The metal shielding layer covers the outer surface of the high-thermal-conductivity interface layer, and the thermal conductivity of the high-thermal-conductivity interface layer is larger than that of the plastic package body. The high-thermal-conductivity interface layer with the thermal conductivity between the metal shielding layer and the plastic package body is arranged between the metal shielding layer and the plastic package body, so that the high-thermal-conductivity interface layer is used as a thermal bridge to quickly diffuse heat generated by the chip to the metal shielding layer, and the thermal resistance between the plastic package body and the shielding layer is remarkably reduced; the interface stress under thermal circulation can be reduced, layering and microcracks of the metal shielding layer are avoided, and therefore the electromagnetic shielding effectiveness and the mechanical reliability are guaranteed.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor packaging, and particularly to a packaging structure for heat dissipation and electromagnetic shielding and a manufacturing method thereof. Background Art

[0002] As electronic products have more and more functions and become more and more complex, the problem of electromagnetic interference between different modules becomes more prominent. Therefore, electronic devices must have good anti-electromagnetic interference ability and heat dissipation ability.

[0003] In the prior art, electromagnetic shielding and heat dissipation of chips are often achieved by arranging a metal shell on the outer periphery of the chip packaging structure, or forming a metal film on the upper surface of the chip packaging structure by vacuum sputtering. However, both of these methods have great defects: the method of installing a metal shell increases the volume of the chip packaging structure, is difficult to install for a smaller volume packaging structure, and will increase the volume of the package, which cannot meet the requirements of the refined development of electronic products. The method of sputtering a metal film on the surface of the packaging structure can meet the electromagnetic shielding requirements of many products, but the thermal conductivity of the plastic package on the outer layer of the packaging structure is usually very low (0.2 - 2.5 W / mK), while the thermal conductivity of the metal film is extremely high (copper is about 400 W / mK, silver is about 429 W / mK). The direct contact between the two will generate an interfacial thermal resistance, which not only reduces the heat dissipation performance of the metal film, but also causes delamination or microcracks between the two during the thermal cycle, directly affecting the electromagnetic shielding effect. Summary of the Invention

[0004] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide a packaging structure for heat dissipation and electromagnetic shielding, which is used to solve the problem that the contact thermal resistance between the sputtered metal film and the plastic package still exists in the prior art, which is likely to reduce the heat dissipation and electromagnetic shielding effects. At the same time, the present invention will also provide a manufacturing method for the packaging structure for heat dissipation and electromagnetic shielding.

[0005] To achieve the above purpose and other related purposes, the present invention provides the following technical solutions: In the first aspect of the present invention, a packaging structure for heat dissipation and electromagnetic shielding is provided, including a substrate, chips, a plastic package, a high thermal conductivity interface layer, and a metal shielding layer. A plurality of chips are flip-chip mounted on the upper surface of the substrate, the plastic package covers the substrate and encapsulates all the chips, the high thermal conductivity interface layer covers the top surface and the side surface of the plastic package, the metal shielding layer covers the outer surface of the high thermal conductivity interface layer, and the thermal conductivity of the high thermal conductivity interface layer is greater than that of the plastic package.

[0006] The thermal conductivity of the plastic package is very low. By setting a high thermal conductivity interface layer with a thermal conductivity between that of the metal shielding layer and the plastic package between them, it serves as a heat bridge to quickly spread the heat generated by the chip to the metal shielding layer, and then dissipate it into the environment through the metal shielding layer. Moreover, the difference in the coefficient of thermal expansion between the metal shielding layer and the plastic package is large. The high thermal conductivity interface layer, as a buffer layer, can reduce the interface stress under thermal cycling, ensure the adhesion strength of the metal shielding layer, and thus enhance the electromagnetic shielding reliability. At the same time, in the present invention, the high thermal conductivity interface layer and the metal shielding layer are encapsulated on five surfaces of the plastic package, which can achieve the maximum heat dissipation and electromagnetic shielding effects.

[0007] Further, the high thermal conductivity interface layer has a grid structure, that is, a plurality of grooves are evenly distributed on the surface of the high thermal conductivity interface layer.

[0008] The high thermal conductivity interface layer can reduce the thermal resistance between the plastic package and the metal shielding layer, and its grid structure can optimize the heat dissipation path, increase the heat dissipation surface area, thereby improving the thermal conductivity efficiency and heat dissipation performance, and effectively reducing the chip operating temperature. Moreover, the grid grooves of the high thermal conductivity interface layer provide three-dimensional anchor points for the metal shielding layer during sputtering or electroplating. After metal sputtering, it is embedded in the grid grooves, reducing the risk of interface delamination and increasing the contact area, so that the peel strength between the high thermal conductivity interface layer and the metal shielding layer is greatly improved. In addition, in the prior art, when the metal directly covers the plastic package, microcracks are likely to appear, affecting the shielding efficiency; while in the present invention, the metal shielding layer can completely fill the grooves and comprehensively cover the high thermal conductivity interface layer, avoiding the discontinuity of the metal shielding layer caused by insufficient surface roughness of the plastic package.

[0009] Further, the width of the groove is between 10 and 30 μm, the depth of the groove is between 10 and 20 μm, and the spacing between the grooves is between 20 and 50 μm.

[0010] The higher the aspect ratio of the groove, the more difficult it is for the sputtered metal to uniformly cover the bottom and side walls of the groove. Controlling the aspect ratio of the groove ≤ 1:1 can avoid the situation where the overly deep groove causes the metal to accumulate at the opening.

[0011] Furthermore, the side wall inclination angle of the groove (i.e., the angle between the side wall and the top surface) is 60 - 90°. The side wall angle of the groove is controlled by the etching process to reduce the sputtering shadow effect and ensure the complete coverage of the sputtered metal. However, reducing the inclination angle will increase the cost and difficulty of etching. Therefore, the side wall inclination angle of the groove is controlled between 80 - 90°.

[0012] Further, the groove is triangular, rectangular, or hexagonal honeycomb-shaped.

[0013] Further, the high - thermal - conductivity interface layer is made of a high - thermal - conductivity interface material, which includes a matrix, fillers, and other additives. The fillers include high - thermal - conductivity and conductive fillers and / or high - thermal - conductivity and non - conductive fillers.

[0014] When only high - thermal - conductivity and conductive fillers are selected as the fillers, the interface layer can be made conductive, effectively reducing the thermal interface impedance while maintaining electromagnetic shielding continuity and improving the electromagnetic shielding effect. When only high - thermal - conductivity and non - conductive fillers are selected as the fillers, the insulating property of the interface layer can be ensured, effectively reducing the thermal resistance while ensuring electrical isolation. When a combination of high - thermal - conductivity and conductive fillers and high - thermal - conductivity and non - conductive fillers is selected as the fillers, conductivity can be provided while further reducing the thermal resistance.

[0015] Among them, the matrix is selected from epoxy resin, silicone resin, or polyimide; the high - thermal - conductivity and conductive fillers are selected from at least one of silver powder, copper powder, graphene, carbon nanotubes, and silicon carbide; the high - thermal - conductivity and non - conductive fillers are selected from at least one of aluminum nitride, boron nitride, diamond, and bismuth telluride.

[0016] The present invention selects a plastic package body with a relatively high thermal conductivity. The thermal conductivity of the plastic package body is about 2.5 W / mK. The thermal conductivity of the high - thermal - conductivity interface layer of the formula of the present invention is ≥3 W / mK, and further by adjusting the selection and ratio of the high - thermal - conductivity interface material, the thermal conductivity of the high - thermal - conductivity interface layer is ≥5 W / mK.

[0017] Further, the addition amount of the fillers is 30 - 70 wt%.

[0018] Further, solder balls are provided on the lower surface of the substrate through a redistribution layer, and underfill is filled between the chip and the substrate.

[0019] In the second aspect of the present invention, a method for manufacturing a heat - dissipation and electromagnetic - shielding package structure is provided, including the following steps: (1) Provide a substrate with through - silicon vias, connect several chips to the upper surface of the substrate through micro - pads, and perform underfilling between the substrate and the chips; (2) Encapsulate the chips on the substrate so that the formed plastic package body covers all the chips, and grind and thin the plastic package body; (3) Grind out pads on the lower surface of the substrate, and prepare a redistribution layer and solder balls on its lower surface; (4) Mount the substrate on a carrier coated with a release layer, and then cut it into individual package structures; (5) Coat the top surface and side surface of the plastic package body of the individual package structure with a high - thermal - conductivity interface material. After it is cured and formed into a high - thermal - conductivity interface layer, use a laser etching process to etch grooves on the surface of the high - thermal - conductivity interface layer, thereby forming a high - thermal - conductivity interface layer with a grid structure; (6) Perform plasma cleaning on the high thermal conductivity interface layer of the grid structure, and then sputter and / or electroplate on the surface of the high thermal conductivity interface layer to form a metal shielding layer.

[0020] Preferably, in step (4), the single encapsulation structure is cut into a trapezoidal columnar structure or a conical columnar structure. Compared with the rectangular columnar structure, the trapezoidal columnar structure or the conical columnar structure has a larger surface area, better heat dissipation and electromagnetic shielding effects; and under the condition of the same bottom area, the four sides of the trapezoidal columnar structure or the conical columnar structure are thinned, which can improve the heat dissipation effect; at the same time, the trapezoidal columnar structure or the conical columnar structure has a smaller volume and weight, meeting the requirements of lightweight.

[0021] Preferably, in step (5), the thickness of the high thermal conductivity interface layer is between 20 and 100 μm, and the groove depth ≤ 1 / 2 of the thickness of the high thermal conductivity interface layer, so as to avoid weakening the support strength, adhesion and thermal conductivity efficiency of the interface layer due to too deep grooves.

[0022] Preferably, in step (6), a stepped metal deposition process is used to deposit a metal shielding layer on the high thermal conductivity interface layer of the grid structure. It specifically includes the following steps: first sputter a high adhesion thin layer on the surface of the high thermal conductivity interface layer to ensure full coverage of the grooves, and then thick layer sputter or electroplate for thickening to ensure uniform coverage of the metal shielding layer and guarantee high thermal conductivity and shielding effects.

[0023] Further, the high adhesion thin layer is selected from titanium, chromium or nickel, and the thickness of the high adhesion thin layer is 10 - 50 nm; thick layer sputtering or electroplating is selected from copper or silver, and the thickness of the metal shielding layer is 5 - 30 μm.

[0024] Further, a layer of ultra-thin inert protective film is sputtered or coated outside the metal shielding layer to extend the service life and improve the weather resistance. The ultra-thin inert protective film is selected from silicon nitride, aluminum oxide, aluminum nitride or polymer coating.

[0025] As described above, the heat dissipation and electromagnetic shielding encapsulation structure and its manufacturing method of the present invention have the following beneficial effects: 1. By setting a high thermal conductivity interface layer with a thermal conductivity between that of the metal shielding layer and the plastic package between the metal shielding layer and the plastic package, the present invention uses it as a heat bridge to quickly spread the heat generated by the chip to the metal shielding layer, significantly reducing the thermal resistance between the plastic package and the shielding layer. At the same time, the high thermal conductivity interface layer serves as a buffer layer, which can reduce the interface stress under thermal cycling and avoid delamination and microcracks of the metal shielding layer, thereby ensuring electromagnetic shielding effectiveness and mechanical reliability.

[0026] 2. The high thermal conductivity interface layer with a grid structure can increase the heat dissipation area, optimize the heat dissipation path, and thus improve the thermal conductivity and heat dissipation performance. Moreover, the grid grooves provide three-dimensional anchor points for the metal shielding layer during sputtering or electroplating formation, and increase the contact area. After metal sputtering, it is embedded in the grid grooves, reducing the risk of interface delamination and avoiding the discontinuity of the metal layer caused by insufficient surface roughness of the plastic package.

[0027] 3. The present invention formulates the material of the high thermal conductivity interface layer, controlling the thermal conductivity ≥ 5 W / mK. It can not only have high thermal conductivity and electrical conductivity, effectively reduce the thermal interface impedance while maintaining electromagnetic shielding continuity, and improve the electromagnetic shielding effect, but also have excellent insulation characteristics, effectively reduce the thermal resistance while ensuring electrical isolation. Therefore, the formula can be adjusted to make the high thermal conductivity interface layer flexibly adapt to different packaging requirements. Brief Description of the Drawings

[0028] Figure 1 It is a schematic structural diagram of the heat dissipation and electromagnetic shielding packaging structure disclosed in Embodiment 1 of the present invention.

[0029] Figure 2 It is a schematic structural diagram of the heat dissipation and electromagnetic shielding packaging structure disclosed in Embodiment 2 of the present invention.

[0030] Figure 3 It is a schematic diagram of the preparation process of the heat dissipation and electromagnetic shielding packaging structure disclosed in Embodiment 2 of the present invention Figure 1 。

[0031] Figure 4 It is a schematic diagram of the preparation process of the heat dissipation and electromagnetic shielding packaging structure disclosed in Embodiment 2 of the present invention Figure 2 。

[0032] Figure 5 It is a schematic diagram of the preparation process of the heat dissipation and electromagnetic shielding packaging structure disclosed in Embodiment 2 of the present invention Figure 3 。

[0033] Figure 6 It is a schematic diagram of the preparation process of the heat dissipation and electromagnetic shielding packaging structure disclosed in Embodiment 2 of the present invention Figure 4 。

[0034] Figure 7 It is a schematic diagram of the preparation process of the heat dissipation and electromagnetic shielding packaging structure disclosed in Embodiment 2 of the present invention Figure 5 。

[0035] Figure 8 It is a schematic diagram of the preparation process of the heat dissipation and electromagnetic shielding packaging structure disclosed in Embodiment 2 of the present invention Figure 6 。

[0036] Figure 9Schematic of the preparation process of the packaging structure for heat dissipation and electromagnetic shielding disclosed in Embodiment 2 of the present invention Figure 7 。

[0037] Figure 10 Schematic diagram of the structure of the high - thermal - conductivity interface layer disclosed in Embodiment 2 of the present invention.

[0038] Figure 11 Schematic diagram of the structure of the high - thermal - conductivity interface layer disclosed in Embodiment 3 of the present invention.

[0039] Description of component labels 100, substrate; 200, chip; 300, plastic package; 400, high - thermal - conductivity interface layer; 410, groove; 500, metal shielding layer; 600, redistribution layer; 700, solder ball; 800, carrier. Detailed implementation manners

[0040] The following specific embodiments illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

[0041] Embodiment 1 This embodiment provides a packaging structure for heat dissipation and electromagnetic shielding. As Figure 1 shown, it includes a substrate 100, a chip 200, solder balls 700, a plastic package 300, a high - thermal - conductivity interface layer 400, and a metal shielding layer 500. Multiple chips are flip - chip mounted on the upper surface of the substrate. The solder balls are connected through a redistribution layer 600 on the lower surface of the substrate. Underfill is filled between the chip and the substrate. The plastic package covers the substrate and encapsulates all the chips. The plastic package has a rectangular columnar structure. The high - thermal - conductivity interface layer is coated on the top surface and the side surface of the plastic package. The metal shielding layer is covered on the outer surface of the high - thermal - conductivity interface layer, that is, the high - thermal - conductivity interface layer is located between the plastic package and the metal shielding layer. The thermal conductivity of the high - thermal - conductivity interface layer is greater than that of the plastic package, thereby acting as a heat bridge to reduce the thermal resistance between the plastic package and the metal shielding layer.

[0042] The high - thermal - conductivity interface layer is a planar structure with a uniform thickness. The high - thermal - conductivity interface layer is made of a high - thermal - conductivity interface material, and the high - thermal - conductivity interface material includes 50wt% epoxy resin and 50wt% aluminum nitride particles.

[0043] Embodiment 2 This embodiment provides a packaging structure for heat dissipation and electromagnetic shielding. As Figure 2As shown in the figure, it includes a substrate 100, chips 200, solder balls 700, a plastic package 300, a high thermal conductivity interface layer 400, and a metal shielding layer 500. Multiple chips are flip-chip mounted on the upper surface of the substrate, and the solder balls are connected to the lower surface of the substrate through a redistribution layer. Underfill is filled between the chips and the substrate. The plastic package covers the substrate and encapsulates all the chips. The plastic package has a trapezoidal columnar structure. The high thermal conductivity interface layer is coated on the top surface and four side surfaces of the plastic package. The metal shielding layer is covered on the outer surface of the high thermal conductivity interface layer, that is, the high thermal conductivity interface layer is located between the plastic package and the metal shielding layer. The thermal conductivity of the high thermal conductivity interface layer is greater than that of the plastic package, thereby serving as a thermal bridge to reduce the thermal resistance between the plastic package and the metal shielding layer.

[0044] Among them, as Figure 10 shown, the high thermal conductivity interface layer has a grid structure. Multiple rectangular grooves 410 are evenly distributed on the surface of the high thermal conductivity interface layer. The included angle between the side wall and the top surface of the rectangular groove is 90°. The thickness of the high thermal conductivity interface layer is 50 μm, the depth of the rectangular groove is 20 μm, the width is 25 μm, and the spacing is 30 μm. The high thermal conductivity interface layer is made of a high thermal conductivity interface material, and the high thermal conductivity interface material includes 25 wt% epoxy resin, 40 wt% graphene nanosheets, 20 wt% silver nanowires, 10 wt% silicon carbide micropowder, and 5 wt% curing agent.

[0045] This embodiment also provides a manufacturing method for the heat dissipation and electromagnetic shielding package structure, including the following steps: Referring to Figure 3 , a substrate 100 is provided, and through-silicon vias are prepared in the substrate; Referring to Figure 4 , multiple chips 200 are connected to the upper surface of the substrate through micro pads, and underfill is performed between the substrate and the chips; Referring to Figure 5 , the chips on the substrate are encapsulated with plastic to form a plastic package 300 that encapsulates all the chips, and the plastic package is ground and thinned, and then the surface of the plastic package is subjected to plasma treatment; Referring to Figure 6 , pads are ground on the lower surface of the substrate, and a redistribution layer 600 and solder balls 700 are prepared on its lower surface; Referring to Figure 7 , the substrate is mounted on a carrier 800 coated with a release layer, and then it is cut into individual package structures, and the individual package structures are trapezoidal columns; Referring to Figure 8, a high - thermal - conductivity interface material is coated on the top surface and four side surfaces of a single encapsulated structure (i.e., its plastic package) after cutting. After it is cured and formed, a high - thermal - conductivity interface layer 400 is formed. The thickness of the shown high - thermal - conductivity interface layer is 50μm. Then, a laser etching process is used to etch rectangular grooves 410 on the surface (top surface and four side surfaces) of the high - thermal - conductivity interface layer, thereby forming a high - thermal - conductivity interface layer with a grid structure; Reference Figure 9 , the high - thermal - conductivity interface layer with a grid structure is subjected to plasma cleaning. Then, titanium is first selected to be sputtered on the surface of the high - thermal - conductivity interface layer to form a high - adhesion thin layer. The thickness of the high - adhesion thin layer is 50nm to ensure full coverage of the grooves. Then, thick - layer electroplating of copper is carried out for thickening to ensure uniform coverage of the metal shielding layer 500. The thickness of the metal shielding layer 500 is 20μm.

[0046] Example 3 This example provides a heat - dissipating and electromagnetic - shielding encapsulated structure. Compared with Example 2, the only difference is that: as Figure 11 shown, the high - thermal - conductivity interface layer has a grid structure, and the surface of the high - thermal - conductivity interface layer is evenly distributed with a plurality of rectangular grooves. The top and bottom surfaces of the rectangular grooves are both rectangles, and the four side walls are inclined. The included angle between the side wall of the rectangular groove and its top surface is 80°.

[0047] Example 4 This example provides a heat - dissipating and electromagnetic - shielding encapsulated structure. Compared with Example 2, the only difference is that: the high - thermal - conductivity interface layer has a grid structure, and the surface of the high - thermal - conductivity interface layer is evenly distributed with a plurality of hexagonal honeycomb - shaped grooves. The included angle between the side wall of the hexagonal honeycomb - shaped groove and its top surface is 90°.

[0048] Example 5 This example provides a heat - dissipating and electromagnetic - shielding encapsulated structure. Compared with Example 2, the only difference is that: the high - thermal - conductivity interface layer is made of a high - thermal - conductivity interface material, and the high - thermal - conductivity interface material includes 35wt% silicone resin, 55wt% boron nitride particles, 5wt% diamond micro - powder, and 5wt% silane coupling agent.

[0049] Example 6 This example provides a heat - dissipating and electromagnetic - shielding encapsulated structure. Compared with Example 2, the only difference is that: the high - thermal - conductivity interface layer is made of a high - thermal - conductivity interface material, and the high - thermal - conductivity interface material includes 40wt% epoxy resin, 40wt% boron nitride particles, and 20wt% graphene nanosheets.

[0050] Example 7 This example provides a heat - dissipating and electromagnetic - shielding encapsulated structure. Compared with Example 2, the only difference is that: An ultra-thin inert protective film is sputtered on the outer surface of the metal shielding layer to extend the service life, and the ultra-thin inert protective film is selected from aluminum oxide.

[0051] In summary, the present invention sets a high-thermal-conductivity interface layer with a thermal conductivity between that of the metal shielding layer and the plastic package between them, making it act as a heat bridge to quickly spread the heat generated by the chip to the metal shielding layer, significantly reducing the thermal resistance between the plastic package and the shielding layer. At the same time, the high-thermal-conductivity interface layer acts as a buffer layer, which can reduce the interface stress under thermal cycling, avoid delamination and microcracks of the metal shielding layer, thereby ensuring the electromagnetic shielding effectiveness and mechanical reliability. The high-thermal-conductivity interface layer with a grid structure can increase the heat dissipation area and optimize the heat dissipation path, thereby improving the thermal conductivity and heat dissipation performance; and the grid grooves provide three-dimensional anchor points for the metal shielding layer during sputtering or electroplating formation, and increase the contact area. After metal sputtering, it is embedded in the grid grooves, reducing the risk of interface delamination, and at the same time avoiding the discontinuity of the metal layer caused by insufficient surface roughness of the plastic package. Therefore, the present invention effectively overcomes various disadvantages in the prior art and has high industrial utilization value.

[0052] The above embodiments are only illustrative of the principles and effects of the present invention, and are not used to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A packaging structure for heat dissipation and electromagnetic shielding, characterized in that, It includes a substrate, chips, a plastic package, a high thermal conductivity interface layer, and a metal shielding layer. A plurality of chips are flip-chip mounted on the upper surface of the substrate. The plastic package covers the substrate and encapsulates all the chips. The high thermal conductivity interface layer covers the top surface and the side surface of the plastic package. The metal shielding layer covers the outer surface of the high thermal conductivity interface layer. The thermal conductivity of the high thermal conductivity interface layer is greater than that of the plastic package.

2. The heat dissipation and electromagnetic shielding package structure according to claim 1, characterized in that, The high thermal conductivity interface layer is made of a high thermal conductivity interface material, which includes a matrix, fillers, and other additives. The fillers include high thermal conductivity conductive fillers and / or high thermal conductivity non-conductive fillers.

3. The heat dissipation and electromagnetic shielding package structure according to claim 2, wherein, The matrix is selected from epoxy resin, silicone resin, or polyimide. The high thermal conductivity conductive fillers are selected from at least one of silver powder, copper powder, graphene, carbon nanotubes, and silicon carbide. The high thermal conductivity non-conductive fillers are selected from at least one of aluminum nitride, boron nitride, diamond, and bismuth telluride.

4. The heat dissipation and electromagnetic shielding package structure according to any one of claims 1 to 3, characterized in that, The high thermal conductivity interface layer has a grid structure, that is, a plurality of grooves are evenly distributed on the surface of the high thermal conductivity interface layer.

5. The heat dissipation and electromagnetic shielding package structure according to claim 4, wherein The width of the grooves is between 10 and 30 μm, the depth of the grooves is between 10 and 20 μm, and the spacing between the grooves is between 20 and 50 μm.

6. The heat dissipation and electromagnetic shielding package structure according to claim 4, wherein The depth-to-width ratio of the grooves ≤ 1:

1.

7. The encapsulation structure for heat dissipation and electromagnetic shielding according to claim 4, wherein The inclination angle of the side wall of the grooves is 60 to 90°.

8. A manufacturing method of the encapsulation structure for heat dissipation and electromagnetic shielding according to any one of claims 1-7, characterized in that, It includes the following steps: (1) Provide a substrate with through-silicon vias, connect a plurality of chips to the upper surface of the substrate through micro-bumps, and perform underfill between the substrate and the chips. (2) Encapsulate the chips on the substrate to form a plastic package that encapsulates all the chips, and grind and thin the plastic package. (3) Grind the lower surface of the substrate to expose pads, and prepare a redistribution layer and solder balls on its lower surface. (4) Mount the substrate on a carrier coated with a release layer, and then cut it into individual package structures. (5) Coat the top surface and the side surface of the plastic package of the individual package structure with a high thermal conductivity interface material. After it is cured and formed into a high thermal conductivity interface layer, use a laser etching process to etch grooves on the surface of the high thermal conductivity interface layer, thereby forming a high thermal conductivity interface layer with a grid structure. (6) Perform plasma cleaning on the high thermal conductivity interface layer with a grid structure, and then sputter and / or electroplate on the surface of the high thermal conductivity interface layer to form a metal shielding layer.

9. The manufacturing method according to claim 8, wherein In step (4), cut the individual package structure into a trapezoidal columnar structure or a conical columnar structure.

10. The manufacturing method according to claim 8, characterized in that, In step (6), use a stepped metal deposition process to deposit a metal shielding layer on the high thermal conductivity interface layer with a grid structure, which specifically includes the following steps: first sputter a high adhesion thin layer on the surface of the high thermal conductivity interface layer to ensure complete coverage of the grooves, and then perform thick-layer sputtering or electroplating for thickening.

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