VCSEL driver integrated circuit

Abstract

The invention discloses a VCSEL (Vertical Cavity Surface Emitting Laser) driving integrated circuit which is characterized by comprising a VCSEL circuit, a charge pump circuit, a grid control circuit, a power switch and a logic control circuit, the VCSEL circuit comprises a VCSEL component and an MOS (Metal Oxide Semiconductor) switch; when the VCSEL driving integrated circuit is operated in a ToF ranging mode, the charge pump circuit is turned on, the power switch is turned off, the charge pump circuit supplies power to the VCSEL assembly, the gate control circuit controls the MOS switch to be turned on so as to enable the VCSEL assembly to emit light, and the gate control circuit adjusts the MOS switch so as to control the peak current of the VCSEL assembly. When the VCSEL driving integrated circuit is operated in an infrared remote control mode, the charge pump circuit is turned off, the power switch is turned on, the VCSEL assembly is powered by the power switch, the gate control circuit controls the MOS switch to be turned on so that the VCSEL assembly can emit light, and the gate voltage of the power switch can be programmably controlled so that the driving current of the VCSEL assembly can be programmed.

Description

Technical Field

[0001] The present invention belongs to a VCSEL driving integrated circuit, and particularly refers to a VCSEL driving integrated circuit with ToF ranging and infrared remote control functions. Background Art

[0002] With the continuous development of consumer electronic products, the integrated circuit (or chip) with multi-functional integration has become a development trend. The integrated circuit of the currently disclosed VCSEL (VCSEL, Vertical Cavity Surface Emitting Laser) technology is usually only applied to the ToF (Time of Flight) ranging function, and drives the VCSEL component to emit light by controlling the open-drain transistor of the pull-down NMOS through a narrow pulse. However, the single-functional VCSEL driving integrated circuit can no longer meet the application requirements of VCSEL. Summary of the Invention

[0003] Herein, the present invention will propose a multi-functional VCSEL driving integrated circuit. In addition to providing the ToF ranging function, the VCSEL driving integrated circuit also has an infrared remote control function. Then, through the multi-functional circuit design, the VCSEL driving integrated circuit of the present invention can meet the development requirements of current consumer electronic products.

[0004] To achieve the above object, the present invention provides a VCSEL driving integrated circuit, which is characterized in that it includes: a charge pump circuit that provides a power supply for the VCSEL component in the ToF ranging mode; a programmable adjustable power switch that provides a power supply for the VCSEL component in the infrared remote control mode; a logic control circuit that switches the working mode of the VCSEL (such as the TOF ranging mode or the infrared remote control mode); wherein, when the VCSEL driving integrated circuit operates in the ToF ranging mode, the charge pump circuit is turned on, the power switch is turned off, the VCSEL component is powered by the charge pump circuit, and the power supply of the charge pump circuit is provided to the VCSEL component; the high level of the pulse output by the gate control circuit controls the VCSEL component to emit light, and the gate control circuit can control the gate voltage of the open-drain MOS transistor to control the peak current of the VCSEL component; wherein, when the VCSEL driving integrated circuit operates in the infrared remote control mode, the charge pump circuit is turned off, the power switch is turned on, the VCSEL component is powered by the power switch; the gate of the power switch receives a programmable signal, and the gate voltage of the power switch is controlled through the programmable signal so that the driving current of the VCSEL component is controlled to meet the current magnitude required in the infrared remote control mode.

[0005] Preferably, the VCSEL driving circuit proposed by the present invention can achieve programmable adjustment of the driving current in both working modes, so as to achieve programmable adjustment of the optical power.

[0006] Preferably, the VCSEL driving integrated circuit is fabricated on a single chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 FIG. is the architecture diagram of the VCSEL driving integrated circuit of the present invention.

[0008] Figure 2 FIG. is the implementation of the power switch in the infrared remote control mode of the present invention.

[0009] Figure 3 FIG. Figure 2 is the structural diagram of the power switch in

[0010] DESCRIPTION OF THE REFERENCE NUMERALS

[0011] 100: VCSEL driving integrated circuit

[0012] 10: VCSEL circuit

[0013] 11: VCSEL component

[0014] 12: MOS switch

[0015] 20: Charge pump circuit

[0016] 30: Gate control circuit

[0017] 40: Power switch

[0018] 41: Programmable signal

[0019] 45: Power switch circuit

[0020] 50: Logic control circuit

[0021] C1: First control signal

[0022] C2: Second control signal DETAILED DESCRIPTION OF THE EMBODIMENTS

[0023] In order to make the objectives, features, and advantages of the present invention more obvious and understandable, the present application will be further described in detail below with reference to the drawings and specific embodiments.

[0024] Please refer to Figure 1 , which are respectively the architecture diagrams of the VCSEL driving integrated circuit of the present invention. As shown in Figure 1As shown, the VCSEL driver integrated circuit 100 of the present invention is an integrated circuit that can operate in the ToF ranging mode or the infrared remote control mode. Its main circuit architecture includes a VCSEL circuit 10, a charge pump circuit 20, a gate control circuit 30, a power switch 40, and a logic control circuit 50.

[0025] The VCSEL circuit 10 includes a VCSEL component 11 and a MOS switch 12. The anode of the VCSEL component 11 is connected to the charge pump circuit 20 and the power switch 40, while the cathode is connected to the drain of the MOS switch 12. The drain of the MOS switch 12 is connected to the VCSEL component 11, the gate is connected to the gate control circuit 30, and the source is grounded.

[0026] The charge pump circuit 20 is the power supply circuit of the VCSEL driver integrated circuit 100, connected between the power supply voltage (VDD) and the anode of the VCSEL component 11 of the VCSEL circuit 10, for supplying power to the VCSEL circuit 10.

[0027] Figure 2 The power switch 40 shown is a programmable power switch. As another power supply circuit of the VCSEL driver integrated circuit 100, it is connected between the power supply voltage (VDD) and the anode of the VCSEL component 11 of the VCSEL circuit 10, for supplying power to the VCSEL circuit 10.

[0028] The logic control circuit 50 is connected to the charge pump circuit 20, and outputs a first control signal C1 to the charge pump circuit 20 to control the turn-on or turn-off of the charge pump circuit 20 through the first control signal C1. The logic control circuit 50 is also connected to the power switch 40, and outputs a second control signal C2 to the power switch 40 to control the turn-on or turn-off of the power switch 40 through the second control signal C2.

[0029] As Figure 1As shown, when the VCSEL driving integrated circuit 100 operates in the ToF ranging mode, the logic control circuit 50 selects to turn on the charge pump circuit 20 and turn off the power switch 40, and the VCSEL component 11 is powered by the charge pump circuit 20. The power supply generated by the charge pump circuit 20 is provided to the VCSEL component 41, and the anode voltage of the VCSEL component 11 is higher than the power supply voltage (VDD). The anode voltage of the VCSEL component 11 is adjusted by the power supply of the charge pump circuit 20 to control the peak current of the VCSEL component 11. In addition, when the VCSEL driving integrated circuit 100 operates in the ToF ranging function mode, the high level of the pulse output by the gate control circuit 30 controls the MOS switch 12 to conduct and makes the VCSEL component 11 emit light, and the pulse width can be programmed and adjusted (for example, the programmed pulse width range is 0.5 ns to 3 ns) to adjust the gate voltage (Vgate) of the MOS switch 12 and control the peak current of the VCSEL component 11.

[0030] As Figure 1 and Figure 2 shown, when the VCSEL driving integrated circuit 100 operates in the infrared remote control mode, the logic control circuit 50 selects to turn off the charge pump circuit 20 and turn on the power switch 40, and the VCSEL component 11 is powered by the power switch 40. The high level of the pulse output by the gate control circuit 30 controls the MOS switch 12 to conduct and makes the VCSEL component 11 emit light. The gate of the power switch 40 receives the programmable signal (3bit-Bin2them) 41, and the gate voltage of the power switch 40 is controlled by the programmable signal (3bit-Bin2them) 41 to further adjust the on-resistance of the power switch 40, so that the drive current (I_VCSEL) of the VCSEL component 11 is programmed to meet the current required for infrared remote control.

[0031] Figure 3This is a specific implementation of the programmable power switch 40. The power switch (P_sw) 40 is a PMOS transistor. The power switch (P_sw) 40 and a plurality of transistors M1 to M10 form a power switch circuit 45. When the VCSEL driving integrated circuit operates in the TOF ranging mode, by controlling the conduction or cutoff of the transistors M1 to M10, the substrate (base) of the power switch (P_sw) 40 is connected to a high voltage to prevent the power switch (P_sw) 40 from conducting in the reverse direction. For example, when En = 0, M1 is cutoff, M2 is conducting, M3 is cutoff, M4 is conducting, the drain voltage of M5 is Vout, the gate voltage of M9 is ground, and M9 is in the conducting state. Therefore, the drain of M9 is connected to Vout through M2 and M5. Then, the voltage of the substrate of the power switch (P_sw) 40 is Vout. In summary, there is no reverse conduction state in the power switch (P_sw) 40. When the VCSEL operates in the TOF ranging mode, the substrate (base) of the power switch (P_sw) 40 is connected to a high voltage (Vout voltage). If the Vout voltage is designed to be higher than Vin, it can effectively prevent the power switch (P_sw) 40 from conducting in the reverse direction.

[0032] Specifically, when the driving integrated circuit of the present invention ( Figure 1 ) is actually fabricated, it will be implemented in the form of a chip. Herein, a single chip can simultaneously have the functions of TOF ranging and infrared remote control, which not only effectively reduces the chip area but also can effectively reduce the chip circuit design cost to meet the development requirements of current consumer electronic products.

[0033] As described above, the above are only the preferred specific embodiments of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present application, according to the technical solution and the application concept of the present application, makes equivalent replacements or changes, and all should be covered within the protection scope of the present application.

Claims

1. A VCSEL driving integrated circuit, characterized in that Comprising: A VCSEL circuit, including a VCSEL component and a MOS switch, the MOS switch is connected to the VCSEL component, and when the MOS switch is turned on, the VCSEL component emits light; A charge pump circuit, connected to the VCSEL component of the VCSEL circuit, for supplying power to the VCSEL component; A power switch, connected to the VCSEL component of the VCSEL circuit, for supplying power to the VCSEL component; And A gate control circuit, connected to the MOS switch of the VCSEL circuit, for controlling the on or off of the MOS switch; Wherein, when the VCSEL driver integrated circuit operates in the ToF ranging mode, the charge pump circuit is turned on, the power switch is turned off, the VCSEL component is powered by the charge pump circuit, and the power supply of the charge pump circuit is provided to the VCSEL component; the high level of the pulse output by the gate control circuit controls the MOS switch to turn on and makes the VCSEL component emit light, and the gate control circuit is also used to adjust the gate voltage of the MOS switch so as to control the peak current of the VCSEL component; Wherein, when the VCSEL driver integrated circuit operates in the infrared remote control mode, the charge pump circuit is turned off, the power switch is turned on, and the VCSEL component is powered by the power switch; the high level of the pulse output by the gate control circuit controls the MOS switch to turn on and makes the VCSEL component emit light; the gate of the power switch receives a programmable signal, and the gate voltage of the power switch is controlled through the programmable signal so that the drive current of the VCSEL component is programmed to conform to the current magnitude required in the infrared remote control mode.

2. The VCSEL driving integrated circuit according to claim 1, wherein Further comprising a logic control circuit, the logic control circuit is connected to the charge pump circuit and the power switch, when the VCSEL driver integrated circuit operates in the ToF ranging mode, the logic control circuit selects to turn on the charge pump circuit and turn off the power switch; when the VCSEL driver integrated circuit operates in the infrared remote control mode, the logic control circuit selects to turn off the charge pump circuit and turn on the power switch.

3. The VCSEL driving integrated circuit according to claim 2, wherein When the VCSEL driver integrated circuit operates in the ToF ranging mode, the charge pump circuit supplies power to the VCSEL component, and the anode voltage of the VCSEL component is higher than the power supply voltage.

4. The VCSEL driving integrated circuit according to claim 1, wherein, The power switch is a PMOS transistor, when the VCSEL driver integrated circuit operates in the ToF ranging mode, the substrate of the power switch is controlled to be connected to a high voltage to prevent the power switch from conducting in the reverse direction.

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