Fast recovery diode and manufacturing method thereof

Abstract

The invention relates to a fast recovery diode and a manufacturing method thereof. The fast recovery diode comprises a substrate; the first epitaxial layer is located on one side of the substrate, at least one floating region is formed in the first epitaxial layer, the doping type of the first epitaxial layer is the same as that of the substrate, and the doping type of the floating region is different from that of the first epitaxial layer; the active layer is located on the side, away from the substrate, of the first epitaxial layer, the active layer comprises an anode region and a terminal region, the anode region and the terminal region are both in contact with the first epitaxial layer, the terminal region is arranged around the anode region, and the doping types of the anode region and the floating region are the same; the isolation layer is located on the side, away from the substrate, of the active layer, the isolation layer comprises a contact hole, and the contact hole exposes part of the anode region; the first metal layer is located on the side, away from the substrate, of the isolation layer, and the first metal layer makes contact with the anode region through the contact hole; therefore, the reverse recovery speed of the fast recovery diode with the positive temperature coefficient is improved.

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