A semiconductor device integrating a temperature measurement module and a HEMT and a preparation method thereof

Abstract

The present application discloses a semiconductor device and a manufacturing method that integrates a temperature measurement module and a HEMT, and relates to the field of semiconductor technology. In the temperature measurement module, the source pad is electrically connected to the source of the HEMT device, the gate pad is electrically connected to the gate, and the drain pad is electrically connected to the drain. The source wiring, gate wiring, and drain wiring are thereby configured as external pins of the HEMT device, and electrically connected to external circuits to enable normal operation of the HEMT device. The Schottky diode of the temperature measurement module is configured to correspond to the heating zone of the HEMT, and the junction temperature of the HEMT device can be measured based on the temperature-dependent forward voltage variation of the Schottky diode. Electrical isolation between the Schottky diode and the HEMT device is achieved through the first passivation layer in the HEMT device, eliminating the need to switch between the operating state and the test state of the semiconductor device, thereby achieving real-time and accurate monitoring of the junction temperature of the HEMT device.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and more specifically, to a semiconductor device and a manufacturing method of an integrated temperature measurement module and a HEMT (High Electron Mobility Transistor). Background Art

[0002] HEMT devices offer exceptional high power, high frequency, and low noise characteristics. Compared to silicon-based devices, HEMTs offer faster switching speeds and higher operating frequencies, enabling higher output power, higher power density, smaller size, and manageable costs. They are widely used in 5G communications, satellites, and power electronics.

[0003] With ever-increasing performance demands, HEMT devices typically operate at high frequencies and high powers. Furthermore, increasing system integration demands further miniaturization of devices, which inevitably leads to greater power dissipation. Due to thermal conductivity limitations, the heat generated by current flowing through the device cannot be dissipated promptly, causing internal device temperatures to rise. This phenomenon is known as "self-heating." Self-heating reduces the device's carrier mobility and saturation velocity, as the excitation of hot electrons and the scattering of phonons increase with increasing temperature. Furthermore, self-heating can cause the HEMT device's threshold voltage to shift, reducing transconductance and thus affecting its switching characteristics and amplification performance. Furthermore, self-heating can lead to the generation of localized hot spots, which can become the starting point of device failure. Long-term operation at high temperatures accelerates the aging process of device materials and shortens their service life. In extreme cases, excessive temperatures can even cause device burnout. Therefore, to mitigate the adverse effects of self-heating, it is necessary to monitor the junction temperature of HEMT devices so that appropriate measures can be implemented promptly based on the monitoring results. Summary of the Invention

[0004] In view of this, the present application provides a semiconductor device and a preparation method of an integrated temperature measurement module and HEMT, which effectively solves the existing technical problems and achieves the purpose of real-time and accurate monitoring of the junction temperature of the HEMT device.

[0005] To achieve the above objectives, the technical solutions provided by this application are as follows:

[0006] A semiconductor device integrating a temperature measurement module and a HEMT, comprising:

[0007] Relatively bonded temperature measurement module and HEMT device;

[0008] The HEMT device includes: a first epitaxial structure layer, and a source electrode, a gate electrode, a drain electrode, and a first passivation layer located on a surface of the first epitaxial structure layer facing the temperature measurement module; the gate electrode is located between the source electrode and the drain electrode; a heating area of ​​the HEMT device is located between the gate electrode and the drain electrode, and the heating area is close to the gate electrode; wherein the first passivation layer is at least provided corresponding to the heating area;

[0009] The temperature measurement module includes: a substrate layer, a second epitaxial structure layer located on a surface of the substrate layer facing the HEMT device, an anode and a cathode located on a surface of the second epitaxial structure layer facing the HEMT device, a second passivation layer covering an exposed surface of the substrate layer facing the HEMT device and an exposed surface of the second epitaxial structure layer, and a source pad, a gate pad, a drain pad, a source wiring, a gate wiring, a drain wiring, a cathode wiring, and an anode wiring located on a side of the second passivation layer facing the HEMT device; the second epitaxial structure layer, the anode, and the cathode forming a Schottky diode; the source pad is electrically connected to the source wiring, the gate pad is electrically connected to the gate wiring, the drain pad is electrically connected to the drain wiring, the anode is electrically connected to the anode wiring, and the cathode is electrically connected to the cathode wiring.

[0010] The orthographic projection of the Schottky diode on the first passivation layer at least partially overlaps with the heating area, the source pad is electrically connected to the source, the gate pad is electrically connected to the gate, and the drain pad is electrically connected to the drain.

[0011] Optionally, the first passivation layer covers an exposed surface of the first epitaxial structure layer facing the temperature measurement module;

[0012] The thickness of the first passivation layer is in the range of 50-400 nm.

[0013] Optionally, at the heat generating area, the anode is in heat transfer contact with the first passivation layer through the anode wiring, and the cathode is in heat transfer contact with the first passivation layer through the cathode wiring.

[0014] Optionally, the source pad is electrically connected to the source electrode by hybrid bonding, the gate pad is electrically connected to the gate electrode by hybrid bonding, and the drain pad is electrically connected to the drain electrode by hybrid bonding;

[0015] At the heat generating area, the anode wiring is in direct contact with the first passivation layer, and the cathode wiring is in direct contact with the first passivation layer.

[0016] Optionally, the source pad is electrically connected to the source electrode via a solder bump, the gate pad is electrically connected to the gate electrode via a solder bump, and the drain pad is electrically connected to the drain electrode via a solder bump;

[0017] At the heat generating area, the anode wiring is in contact with the first passivation layer via a solder bump, and the cathode wiring is in contact with the first passivation layer via a solder bump.

[0018] Optionally, the material of the solder bump includes at least one of Au, Sn and In.

[0019] Optionally, the material of the substrate layer is silicon, silicon carbide, gallium oxide, diamond or gallium nitride;

[0020] The material of the second epitaxial structure layer is silicon, silicon carbide, gallium oxide, diamond or gallium nitride;

[0021] The material of the cathode includes at least one of Ti / Al / Ni / Au, Ti / Al and Ti / Au;

[0022] The material of the anode is at least one of Au, Ag, Al, Pt, Ni, and Mo;

[0023] The material of the first passivation layer and the second passivation layer is at least one of SiN, Si3N4 and SiO2.

[0024] Based on the same inventive concept, the present application also provides a method for preparing a semiconductor device having an integrated temperature measurement module and a HEMT, which is used to prepare the above-mentioned semiconductor device having an integrated temperature measurement module and a HEMT, and the preparation method includes:

[0025] A temperature measurement module and a HEMT device are prepared separately, wherein the HEMT device comprises: a first epitaxial structure layer, and a source, a gate, a drain, and a first passivation layer located on the same side surface of the first epitaxial structure layer; the gate is located between the source and the drain, and a heating area of ​​the HEMT device is located between the gate and the drain, and the heating area is close to one side of the gate, wherein the first passivation layer is at least corresponding to the heating area; and the temperature measurement module comprises: a substrate layer, a second epitaxial structure layer located on one side surface of the substrate layer, and a second epitaxial structure layer located on the side of the second epitaxial structure layer away from the substrate layer. an anode and a cathode on the surface thereof, a second passivation layer covering the exposed surface of the substrate layer and the second epitaxial structure layer on the anode side, a source pad, a gate pad, a drain pad, a source wiring, a gate wiring, a drain wiring, a cathode wiring and an anode wiring located on the side of the second passivation layer facing away from the substrate layer; the second epitaxial structure layer, the anode and the cathode forming a Schottky diode, the source pad being electrically connected to the source wiring, the gate pad being electrically connected to the gate wiring, the drain pad being electrically connected to the drain wiring, the anode being electrically connected to the anode wiring, and the cathode being electrically connected to the cathode wiring;

[0026] The temperature measurement module and the HEMT device are bonded relative to each other, wherein the orthographic projection of the Schottky diode on the first passivation layer at least partially overlaps with the heating area, the source pad is electrically connected to the source, the gate pad is electrically connected to the gate, and the drain pad is electrically connected to the drain.

[0027] Optionally, bonding the temperature measurement module and the HEMT device relative to each other includes:

[0028] Grinding the surface of the temperature measurement module on the side having the gate pad and the surface of the HEMT device on the side having the gate;

[0029] Adjusting the relative alignment between the temperature measurement module and the HEMT device, wherein the source is aligned with the source pad, the gate is aligned with the gate pad, the drain is aligned with the drain pad, and the anode wiring and the cathode wiring are aligned with the heating area;

[0030] The temperature measurement module and the HEMT device are bonded using a hybrid bonding process.

[0031] Optionally, bonding the temperature measurement module and the HEMT device relative to each other includes:

[0032] growing solder bumps on the source pad, the gate pad, the drain pad, the cathode wiring, and the anode wiring, respectively;

[0033] Adjusting the relative alignment between the temperature measurement module and the HEMT device, wherein the source electrode is aligned with the solder bump of the source pad, the gate electrode is aligned with the solder bump of the gate pad, the drain electrode is aligned with the solder bump of the drain pad, and the solder bump of the anode wiring and the solder bump of the cathode wiring are aligned with the heat generating area;

[0034] The temperature measurement module and the HEMT device are bonded.

[0035] Compared with the existing technology, the technical solution provided by this application has at least the following advantages:

[0036] The present application provides a semiconductor device and a manufacturing method integrating a temperature measurement module and a HEMT. The semiconductor device includes a temperature measurement module and a HEMT device bonded to each other. A source pad in the temperature measurement module is electrically connected to the source of the HEMT device, a gate pad in the temperature measurement module is electrically connected to the gate of the HEMT device, and a drain pad in the temperature measurement module is electrically connected to the drain of the HEMT device. The source, gate, and drain wiring are configured as external pins of the HEMT device and electrically connected to external circuits to ensure normal operation of the HEMT device. Furthermore, a Schottky diode in the temperature measurement module is positioned corresponding to the heating zone of the HEMT. Based on the temperature-dependent forward voltage variation of the Schottky diode, the junction temperature of the HEMT device can be measured. Furthermore, the Schottky diode provided in the present application is integrated into the temperature measurement module and electrically isolated from the HEMT device by a first passivation layer in the HEMT device. Therefore, switching between the operating and testing states of the semiconductor device is unnecessary, thereby achieving real-time and accurate monitoring of the junction temperature of the HEMT device. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are merely embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without any creative work.

[0038] Figure 1 A schematic structural diagram of a semiconductor device integrating a temperature measurement module and a HEMT provided in an embodiment of the present application;

[0039] Figure 2 A schematic diagram of the structure of a temperature measurement module provided in an embodiment of the present application;

[0040] Figure 3 A schematic structural diagram of a Schottky diode provided in an embodiment of the present application;

[0041] Figure 4 A schematic structural diagram of another semiconductor device integrating a temperature measurement module and a HEMT provided in an embodiment of the present application;

[0042] Figure 5 A flow chart of a method for preparing a semiconductor device with an integrated temperature measurement module and HEMT provided in an embodiment of the present application.

[0043] Reference numerals:

[0044] 100-temperature measurement module; 200-HEMT device; 210-first epitaxial structure layer; 221-source; 222-gate; 223-drain; 224-first passivation layer; S1-heating area; 110-substrate layer; 120-second epitaxial structure layer; 131-anode; 132-cathode; 140-second passivation layer; 151-source pad; 152-gate pad; 153-drain pad; 161-source wiring; 162-gate wiring; 163-drain wiring; 171-anode wiring; 172-cathode wiring; 300-solder bump. DETAILED DESCRIPTION

[0045] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0046] As described in the background, HEMT devices offer exceptional characteristics such as high power, high frequency, and low noise. Compared to silicon-based devices, HEMTs offer faster switching speeds and higher operating frequencies, enabling higher output power, higher power density, smaller size, and manageable costs. They are widely used in fields such as 5G communications, satellites, and power electronics.

[0047] With ever-increasing performance demands, HEMT devices typically operate at high frequencies and high powers. Furthermore, increasing system integration demands further miniaturization of devices, which inevitably leads to greater power dissipation. Due to thermal conductivity limitations, the heat generated by current flowing through the device cannot be dissipated promptly, causing internal device temperatures to rise. This phenomenon is known as "self-heating." Self-heating reduces the device's carrier mobility and saturation velocity, as the excitation of hot electrons and the scattering of phonons increase with increasing temperature. Furthermore, self-heating can cause the HEMT device's threshold voltage to shift, reducing transconductance and thus affecting its switching characteristics and amplification performance. Furthermore, self-heating can lead to the generation of localized hot spots, which can become the starting point of device failure. Long-term operation at high temperatures accelerates the aging process of device materials and shortens their service life. In extreme cases, excessive temperatures can even cause device burnout. Therefore, to mitigate the adverse effects of self-heating, it is necessary to monitor the junction temperature of HEMT devices so that appropriate measures can be implemented promptly based on the monitoring results.

[0048] In recent years, the most widely used methods for monitoring the junction temperature of HEMT devices are optical methods and temperature-sensitive electrical parameter methods. Optical temperature measurement requires destroying the device package to allow incident light to contact the device and receive reflected light. The temperature-sensitive electrical parameter method, on the other hand, exploits the relationship between the electrical parameters of the HEMT device and temperature. Many electrical parameters of HEMT devices are temperature-dependent, such as the forward voltage of the HEMT gate-source Schottky diode, the on-resistance of the HEMT channel, and the gate resistance of the HEMT. Changes in device temperature can be reflected in changes in these electrical parameters. The temperature-sensitive electrical parameter method uses the HEMT device itself as a temperature sensor. Most temperature-sensitive electrical parameter temperature measurement methods involve two steps: calibration and temperature measurement. The temperature-dependent relationship between the electrical parameters is determined in the calibration step. The temperature measurement step then converts these changes in the electrical parameters into temperature changes to extract the device junction temperature. The temperature-sensitive electrical parameter method offers the advantages of fast response, no need to destroy the device package, and the ability to monitor the device junction temperature online. Furthermore, it requires only selecting appropriate temperature-sensitive parameters based on the device structure and principle, eliminating complex operations. Therefore, it is the primary method for device junction temperature monitoring.

[0049] However, the temperature-sensitive electrical parameter method uses changes in temperature-sensitive parameters to reflect device temperature changes. The accuracy of this temperature measurement method depends on the accuracy of the temperature-sensitive electrical parameter measurements. If the temperature-sensitive electrical parameter measurements and calculations are inaccurate, the resulting junction temperature will also be inaccurate. Furthermore, the inventors have found that the hottest region of a HEMT device is a small area near the gate, facing the drain. The junction temperature measured using the temperature-sensitive electrical parameter method is the average temperature of the entire device, which can underestimate the peak temperature of the HEMT. Furthermore, this method presents the following challenges: Because the temperature-sensitive electrical parameter method uses the HEMT device itself as a temperature sensor, online, real-time measurement of the junction temperature of a working HEMT device requires switching the HEMT from operating to testing mode and then quickly switching back to operating mode after testing. This places extremely high demands on the test instrument's fast switching capabilities. Furthermore, some heat dissipation during the switching process is inevitable, resulting in the measured junction temperature being slightly lower than the actual peak junction temperature.

[0050] Based on this, the embodiments of the present application provide a semiconductor device and a manufacturing method of an integrated temperature measurement module and HEMT, which effectively solve the existing technical problems and achieve the purpose of real-time and accurate measurement of the junction temperature of the HEMT device.

[0051] To achieve the above purpose, the technical solutions provided in the embodiments of the present application are as follows, specifically combined with Figures 1 to 5 The technical solutions provided in the embodiments of the present application are described in detail.

[0052] Combine Figures 1 to 3 As shown, Figure 1 This is a schematic structural diagram of a semiconductor device integrating a temperature measurement module and a HEMT provided in an embodiment of the present application. Figure 2 This is a schematic diagram of the structure of a temperature measurement module provided in an embodiment of the present application. Figure 3 This is a schematic diagram of the structure of a Schottky diode provided in an embodiment of the present application. The semiconductor device of the integrated temperature measurement module and HEMT provided in an embodiment of the present application includes:

[0053] The temperature measurement module 100 and the HEMT device 200 are bonded to each other. The HEMT device 200 includes a first epitaxial structure layer 210, and a source 221, a gate 222, a drain 223, and a first passivation layer 224 located on the surface of the first epitaxial structure layer 210 facing the temperature measurement module 100. The gate 222 is located between the source 221 and the drain 223. The heating zone S1 of the HEMT device 200 is located between the gate 222 and the drain 223, and is close to one side of the gate 222. The first passivation layer 224 is at least provided corresponding to the heating zone S1. The heating zone S1 is the region of the HEMT device 200 where the peak junction temperature occurs. It is located midway between the gate 222 and the drain 223, close to the gate 222. The heating zone S1 is closer to the gate 222 than to the drain 223. The specific location of the region needs to be analyzed based on actual applications.

[0054] The temperature measurement module 100 includes: a substrate layer 110; a second epitaxial structure layer 120 located on the surface of the substrate layer 110 facing the HEMT device 200; an anode 131 and a cathode 132 located on the surface of the second epitaxial structure layer 120 facing the HEMT device 200, with a gap between the anode 131 and the cathode 132; a second passivation layer 140 covering the exposed surface of the substrate layer 110 facing the HEMT device 200 and the exposed surface of the second epitaxial structure layer 120; a source pad 151, a gate pad 152, a drain pad 153, a source wiring 161, a gate wiring 162, a drain wiring 163, a cathode wiring 172, and an anode wiring 171 located on the side of the second passivation layer 140 facing the HEMT device 200. The second epitaxial structure layer 120, the anode 131, and the cathode 132 form a Schottky diode. The source pad 151 is electrically connected to the source wiring 161, the gate pad 152 is electrically connected to the gate wiring 162, the drain pad 153 is electrically connected to the drain wiring 163, the anode 131 is electrically connected to the anode wiring 171, and the cathode 132 is electrically connected to the cathode wiring 172. The orthographic projection of the Schottky diode on the first passivation layer 224 at least partially overlaps with the heating area S1. The source pad 151 is electrically connected to the source 221, the gate pad 152 is electrically connected to the gate 222, and the drain pad 153 is electrically connected to the drain 223.

[0055] Optionally, the second passivation layer 140 provided in the embodiment of the present application has corresponding groove structures on the side facing away from the substrate layer 110, such as a source groove, a gate groove, a drain groove, an anode groove, and a cathode groove. The source groove is provided with a source pad 151 and a source wiring 161, the gate groove is provided with a gate pad 152 and a gate wiring 162, and the drain groove is provided with a drain pad 153 and a drain wiring 163. The anode groove exposes the anode 131, and the anode wiring 171 is provided in the anode groove, and the anode wiring 171 is in contact and electrically connected to the anode 131; similarly, the cathode groove exposes the cathode 132, and the cathode wiring 172 is provided in the cathode groove, and the cathode wiring 172 is in contact and electrically connected to the cathode 132. In addition, in the direction perpendicular to the plane of the substrate layer 110, the surface of the source pad 151, the gate pad 152, the drain pad 153, the source wiring 161, the gate wiring 162, the drain wiring 163, the cathode wiring 172 and the anode wiring 171 facing away from the substrate layer 110 can be flush with the surface of the second passivation layer 140 facing away from the substrate layer 110, or higher than the surface of the second passivation layer 140 facing away from the substrate layer 110, and this application does not impose any specific restrictions on this.

[0056] As can be seen from the above description, the semiconductor device includes a temperature measurement module 100 and a HEMT device 200 bonded to each other. The source pad 151 of the temperature measurement module 100 is electrically connected to the source 221 of the HEMT device 200, the gate pad 152 of the temperature measurement module 100 is electrically connected to the gate 222 of the HEMT device 200, and the drain pad 153 of the temperature measurement module 100 is electrically connected to the drain 223 of the HEMT device 200. Thus, the source wiring 161, gate wiring 162, and drain wiring 163 are configured as external pins of the HEMT device 200 and electrically connected to external circuits to ensure normal operation of the HEMT device 200. Furthermore, the Schottky diode of the temperature measurement module 100 is positioned corresponding to the heat generation area S1 of the HEMT device 200. Heat generated by the operation of the HEMT device 200 is transferred to the Schottky diode through heat transfer. Based on the temperature-dependent forward voltage variation of the Schottky diode, the junction temperature of the HEMT device 200 can be measured. Furthermore, the Schottky diode provided in the embodiment of the present application is integrated into the temperature measurement module 100 and electrically isolated from the HEMT device 200 by the first passivation layer 224 in the HEMT device 200. Therefore, there is no need to switch between the operating and testing states of the semiconductor device, thereby achieving real-time and accurate monitoring of the junction temperature of the HEMT device 200. Based on the aforementioned temperature measurement principles, the semiconductor device provided in the embodiment of the present application also does not require damage to the packaging structure of the HEMT device 200. Optionally, the Schottky diode is aligned with the heat generation area S1 in a direction perpendicular to the plane of the substrate layer 110, further improving the accuracy of monitoring the junction temperature of the HEMT device 200.

[0057] In some embodiments, the first passivation layer 224 provided in the embodiments of the present application covers the exposed surface of the first epitaxial structure layer 210 facing the temperature measurement module 100. The first passivation layer 224 covers the surface of the first epitaxial structure layer 210 facing the temperature measurement module 100, and the first passivation layer 224 includes a source electrode hollowing, a gate electrode hollowing, and a drain electrode hollowing. The source electrode hollowing is filled with a source electrode 221, the gate electrode hollowing is filled with a gate electrode 222, and the drain electrode hollowing is filled with a drain electrode 223. Increasing the coverage area of ​​the first passivation layer 224 can prevent short circuits between the circuits in the temperature measurement module 100 and the first epitaxial structure layer 210 when the temperature measurement module 100 and the HEMT device 200 are bonded, thereby improving the reliability of the semiconductor device. Optionally, the thickness of the first passivation layer 224 provided in the embodiments of the present application ranges from 50 to 400 nm.

[0058] Continue as Figure 1 As shown, at the heating area S1, the anode 131 is in heat transfer contact with the first passivation layer 224 through the anode wiring 171, and the cathode 132 is in heat transfer contact with the first passivation layer 224 through the cathode wiring 172. When the temperature measurement module 100 and the HEMT device 200 are bonded, the anode wiring 171 and the cathode wiring 172 are in contact with the first passivation layer 224 at the heating area S1, thereby achieving the purpose of heat transfer contact between the HEMT device 200 and the anode 131 and the cathode 132. And as shown Figure 2 As shown, the anode wiring 171 provided in the embodiment of the present application can be provided with a pad structure that is in contact with the anode 131, and the cathode wiring 172 can be provided with a pad structure that is in contact with the cathode 132, wherein the pad structure is located correspondingly in the heating area S1, thereby increasing the contact area between the anode wiring 171 and the cathode wiring 172 and the first passivation layer 224 in the heating area S1, thereby achieving a better heat transfer effect between the Schottky diode and the HEMT device 200, and improving the junction temperature measurement accuracy of the HEMT device 200.

[0059] In some embodiments, the temperature measurement module 100 and the HEMT device 200 provided in the embodiments of the present application can be electrically connected by direct contact bonding. In this case, the anode wiring 171 and the cathode wiring 172 are in direct contact with the first passivation layer 224, thereby achieving a heat transfer effect. Figure 1As shown, the source pad 151 is electrically connected to the source electrode 221 by hybrid bonding, the gate pad 152 is electrically connected to the gate electrode 222 by hybrid bonding, and the drain pad 153 is electrically connected to the drain electrode 223 by hybrid bonding, so that the source pad 151 is directly bonded to the source electrode 221, the gate pad 152 is directly bonded to the gate electrode 222, and the drain pad 153 is directly bonded to the drain electrode 223. In the heating area S1, the anode wiring 171 is in direct contact with the first passivation layer 224 to achieve heat transfer, and the cathode wiring 172 is in direct contact with the first passivation layer 224 to achieve heat transfer.

[0060] Alternatively, in some other embodiments, the circuits between the temperature measurement module 100 and the HEMT device 200 provided in the embodiment of the present application can also be electrically connected by solder bonding. In this case, the anode wiring 171 and the cathode wiring 172 also need to be indirectly in contact with the first passivation layer 224 through solder to achieve a heat transfer effect. Figure 4, which is a schematic structural diagram of another semiconductor device integrating a temperature measurement module and a HEMT according to an embodiment of the present application, wherein the source pad 151 is electrically connected to the source 221 via a solder bump 300, the gate pad 152 is electrically connected to the gate 222 via a solder bump 300, and the drain pad 153 is electrically connected to the drain 223 via a solder bump 300, so that the source pad 151 is indirectly bonded to the source 221, the gate pad 152 is indirectly bonded to the gate 222, and the drain pad 153 is indirectly bonded to the drain 223. Furthermore, at the heating zone S1, the anode wiring 171 and the first passivation layer 224 are in contact via the solder bump 300, and the cathode wiring 172 and the first passivation layer 224 are in contact via the solder bump 300, thereby achieving indirect contact between the anode wiring 171 and the cathode wiring 172 and the first passivation layer 224, thereby achieving a heat transfer effect. Optionally, in the HEMT device 200 provided in the embodiment of the present application, the source 221, the gate 222, and the drain 223 may protrude beyond the first passivation layer 224; that is, in a direction perpendicular to the plane of the substrate layer 110, the thickness of the source 221, the gate 222, and the drain 223 is greater than the thickness of the first passivation layer 224, so that the surface of the source 221, the gate 222, and the drain 223 facing the temperature measurement module 100 is higher than the surface of the first passivation layer 224 facing the temperature measurement module 100, thereby facilitating alignment and bonding of the solder bump 300. At this time, the solder bumps 300 corresponding to the anode wiring 171 and the cathode wiring 172 provided in the embodiment of the present application are higher than the solder bumps 300 on the source pad 151, the gate pad 152 and the drain pad 153 in the direction perpendicular to the plane of the substrate layer 110, so as to ensure that the solder bumps 300 corresponding to the anode wiring 171 and the cathode wiring 172 can be in contact and connected with the first passivation layer 224, thereby achieving a contact heat conduction effect.

[0061] In some embodiments, the material of the solder bump 300 provided in the embodiments of the present application includes at least one of Au, Sn, and In. When the material of the solder bump 300 is In, due to its softness, its use as a solder material does not damage the HEMT device 200, thereby improving the bonding performance between the temperature measurement module 100 and the HEMT device 200. Optionally, the material of the substrate layer 110 provided in the embodiments of the present application is silicon, silicon carbide, gallium oxide, diamond, or gallium nitride. The material of the second epitaxial structure layer 120 is silicon, silicon carbide, gallium oxide, diamond, or gallium nitride. The source pad 151, gate pad 152, drain pad 153, source wiring 161, gate wiring 162, drain wiring 163, anode wiring 171, and cathode wiring 172 may all be made of metal. Furthermore, the cathode 132 provided in the embodiment of the present application may be made of at least one of Ti / Al / Ni / Au, Ti / Al, and Ti / Au, or may be a metal material that forms an ohmic contact with the second epitaxial structure layer 120. The anode 131 may be made of at least one of Au, Ag, Al, Pt, Ni, and Mo, or may be a metal material that forms a Schottky contact with the second epitaxial structure layer 120. The first passivation layer 224 and the second passivation layer 140 may be made of at least one of SiN, Si3N4, and SiO2, which is not specifically limited in this application.

[0062] Based on the same inventive concept, the embodiment of the present application also provides a method for preparing a semiconductor device with an integrated temperature measurement module and HEMT, which is used to prepare the semiconductor device with an integrated temperature measurement module and HEMT provided in any of the above embodiments. Figure 5 FIG. 1 is a flow chart of a method for manufacturing a semiconductor device including an integrated temperature measurement module and a HEMT according to an embodiment of the present application, wherein the manufacturing method includes:

[0063] Step S1′: Prepare the temperature measurement module 100 and the HEMT device 200, respectively. The HEMT device 200 includes a first epitaxial structure layer 210, and a source 221, a gate 222, a drain 223, and a first passivation layer 224 located on the same side surface of the first epitaxial structure layer 210. The gate 222 is located between the source 221 and the drain 223. A heating area S1 of the HEMT device 200 is located between the gate 222 and the drain 223, and the heating area S1 is close to one side of the gate 222. The first passivation layer 224 is at least provided corresponding to the heating area S1. In addition, the temperature measurement module 100 includes: a substrate layer 110, a second epitaxial structure layer 120 located on a surface of one side of the substrate layer 110, an anode 131 and a cathode 132 located on a surface of the second epitaxial structure layer 120 facing away from the substrate layer 110, a second passivation layer 140 covering the exposed surface of the substrate layer 110 and the second epitaxial structure layer 120 on the anode 131 side, a source pad 151, a gate pad 152, a drain pad 153, and a second passivation layer 140 located on a side of the second passivation layer 140 facing away from the substrate layer 110. The source wiring 161, the gate wiring 162, the drain wiring 163, the cathode wiring 172 and the anode wiring 171; the second epitaxial structure layer 120, the anode 131 and the cathode 132 constitute a Schottky diode, the source pad 151 is electrically connected to the source wiring 161, the gate pad 152 is electrically connected to the gate wiring 162, the drain pad 153 is electrically connected to the drain wiring 163, the anode 131 is electrically connected to the anode wiring 171, and the cathode 132 is electrically connected to the cathode wiring 172.

[0064] Step S2′: bonding the temperature measurement module 100 and the HEMT device 200 relative to each other, wherein the orthographic projection of the Schottky diode on the first passivation layer 224 at least partially overlaps with the heating area S1, the source pad 151 is electrically connected to the source 221, the gate pad 152 is electrically connected to the gate 222, and the drain pad 153 is electrically connected to the drain 223. That is, the side of the temperature measurement module 100 having the source pad 151, the gate pad 152, the drain pad 153, the source wiring 161, the gate wiring 162, the drain wiring 163, the cathode wiring 172, and the anode wiring 171 is aligned with the side of the HEMT device 200 having the source 221, the gate 222, the drain 223, and the first passivation layer 224. Specifically, the source pad 151 and the source 221 are aligned, the gate pad 152 and the gate 222 are aligned, the drain pad 153 and the drain 223 are aligned, and the anode wiring 171 and the cathode wiring 172 are aligned with the heating area S1. Then, bonding is performed to form a semiconductor device.

[0065] Regarding the temperature measurement module 100 and the HEMT device 200, the integrated temperature measurement module and HEMT semiconductor device provided in the embodiments of the present application does not require destroying the packaging structure of the HEMT device 200. Therefore, the HEMT device 200 can be manufactured using existing manufacturing methods, which will not be described in detail in this application. The manufacturing process of the temperature measurement module 100 includes:

[0066] Step S11 : growing an initial second epitaxial structure layer on the substrate layer 110 using a CVD (Chemical Vapor Deposition) process.

[0067] Step S12 : etching the initial second epitaxial structure layer through photolithography and ICP (Inductively Coupled Plasma) etching processes to form a second epitaxial structure layer 120 .

[0068] Step S13: Using a lift-off process (metal stripping process), an anode 131 and a cathode 132 are formed on the second epitaxial structure layer 120. The anode 131 and the cathode 132 can be prepared simultaneously or in steps, and this application does not impose any specific restrictions on this.

[0069] Step S14: Using a CVD process, the exposed surfaces of the substrate layer 110 and the second epitaxial structure layer 120 on the side having the anode 131 are covered with a second passivation layer 140 , and a CMP (Chemical Mechanical Polishing) process is used to smooth the surface of the second passivation layer 140 .

[0070] Step S15: Through processes such as photolithography, etching, evaporation or sputtering, a groove is formed on the surface of the second passivation layer 140 facing away from the substrate layer 110, and metal is grown to prepare a source pad 151, a gate pad 152, a drain pad 153, a source wiring 161, a gate wiring 162, a drain wiring 163, a cathode wiring 172 and an anode wiring 171, thereby obtaining a temperature measurement module 100.

[0071] After the temperature measurement module 100 and the HEMT device 200 are fabricated, they need to be aligned and bonded together. In some embodiments, the wiring between the temperature measurement module 100 and the HEMT device 200 provided in the embodiments of the present application can be directly bonded to achieve electrical connection. In this case, the anode wiring 171 and the cathode wiring 172 are in direct contact with the first passivation layer 224, thereby achieving heat transfer. In other words, bonding the temperature measurement module 100 to the HEMT device 200 includes: smoothing the surface of the temperature measurement module 100 on the side with the gate pad 152 and the surface of the HEMT device 200 on the side with the gate 222; then adjusting the relative alignment of the temperature measurement module 100 and the HEMT device 200, wherein the source 221 is aligned with the source pad 151, the gate 222 is aligned with the gate pad 152, the drain 223 is aligned with the drain pad 153, and the anode wiring 171 and the cathode wiring 172 are aligned with the heat generation area S1. Finally, a flip-chip bonder is used to bond the temperature measurement module 100 to the HEMT device 200 using a hybrid bonding process by applying pressure and temperature.

[0072] Alternatively, in some other embodiments, the circuits between the temperature measurement module 100 and the HEMT device 200 provided in the embodiments of the present application can also be electrically connected via solder bonding. In this case, the anode wiring 171 and the cathode wiring 172 also need to be indirectly in contact with the first passivation layer 224 via solder to achieve a heat transfer effect. In other words, bonding the temperature measurement module 100 and the HEMT device 200 relative to each other includes: growing solder bumps 300 on the source pad 151, the gate pad 152, the drain pad 153, the cathode wiring 172, and the anode wiring 171. The relative alignment between the temperature measurement module 100 and the HEMT device 200 is then adjusted, with the source electrode 221 aligned with the solder bump 300 of the source pad 151, the gate electrode 222 aligned with the solder bump 300 of the gate pad 152, the drain electrode 223 aligned with the solder bump 300 of the drain pad 153, and the solder bump 300 of the anode wiring 171 and the solder bump 300 of the cathode wiring 172 aligned with the heat generating area S1. Finally, a flip-chip bonder is used to bond the temperature measurement module 100 and the HEMT device 200 by applying pressure and temperature.

[0073] In summary, embodiments of the present application provide a semiconductor device and a manufacturing method integrating a temperature measurement module and a HEMT. The semiconductor device includes a temperature measurement module and a HEMT device bonded to each other. A source pad in the temperature measurement module is electrically connected to the source of the HEMT device, a gate pad in the temperature measurement module is electrically connected to the gate of the HEMT device, and a drain pad in the temperature measurement module is electrically connected to the drain of the HEMT device. The source, gate, and drain wiring are configured as external pins of the HEMT device and electrically connected to external circuits to ensure normal operation of the HEMT device. Furthermore, a Schottky diode in the temperature measurement module is positioned corresponding to the heating zone of the HEMT. Based on the temperature-dependent forward voltage variation of the Schottky diode, the junction temperature of the HEMT device can be measured. Furthermore, the Schottky diode provided in embodiments of the present application is integrated into the temperature measurement module and electrically isolated from the HEMT device by a first passivation layer in the HEMT device. Therefore, switching between operating and testing states of the semiconductor device is unnecessary, thereby achieving real-time and accurate monitoring of the junction temperature of the HEMT device.

[0074] In the description of the embodiments of the present application, it should be understood that the orientation or position relationship indicated by terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", and "circumferential" are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0075] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of the embodiments of the present application, the meaning of "plurality" is at least two, for example, two, three, etc., unless otherwise clearly specified.

[0076] In the embodiments of this application, unless otherwise specified or limited, terms such as "installed," "connected," "connected," and "fixed" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integration; mechanical connections, electrical connections, or communication between them; direct connections, indirect connections through an intermediate medium, and internal connections between two components or interactions between two components, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in this application based on specific circumstances.

[0077] In the embodiments of the present application, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Furthermore, a first feature being "above," "above," and "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0078] In the embodiments of the present application, the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples without contradiction.

[0079] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.

Claims

1. A semiconductor device integrating a temperature measurement module and a HEMT, characterized in that: include: Relatively bonded temperature measurement module and HEMT device; The HEMT device includes: a first epitaxial structure layer, and a source electrode, a gate electrode, a drain electrode, and a first passivation layer located on a surface of the first epitaxial structure layer facing the temperature measurement module; the gate electrode is located between the source electrode and the drain electrode; a heating area of ​​the HEMT device is located between the gate electrode and the drain electrode, and the heating area is close to the gate electrode; wherein the first passivation layer is at least provided corresponding to the heating area; The temperature measurement module includes: a substrate layer, a second epitaxial structure layer located on a surface of the substrate layer facing the HEMT device, an anode and a cathode located on a surface of the second epitaxial structure layer facing the HEMT device, a second passivation layer covering an exposed surface of the substrate layer facing the HEMT device and an exposed surface of the second epitaxial structure layer, and a source pad, a gate pad, a drain pad, a source wiring, a gate wiring, a drain wiring, a cathode wiring, and an anode wiring located on a side of the second passivation layer facing the HEMT device; the second epitaxial structure layer, the anode, and the cathode forming a Schottky diode; the source pad is electrically connected to the source wiring, the gate pad is electrically connected to the gate wiring, the drain pad is electrically connected to the drain wiring, the anode is electrically connected to the anode wiring, and the cathode is electrically connected to the cathode wiring. The orthographic projection of the Schottky diode on the first passivation layer at least partially overlaps with the heating area, the source pad is electrically connected to the source, the gate pad is electrically connected to the gate, and the drain pad is electrically connected to the drain.

2. The semiconductor device of the integrated temperature measurement module and HEMT according to claim 1, characterized in that: The first passivation layer covers the exposed surface of the first epitaxial structure layer facing the temperature measurement module; The thickness of the first passivation layer is in the range of 50-400 nm.

3. The semiconductor device of the integrated temperature measurement module and HEMT according to claim 1, characterized in that: At the heat generating area, the anode is in heat transfer contact with the first passivation layer through the anode wiring, and the cathode is in heat transfer contact with the first passivation layer through the cathode wiring.

4. The semiconductor device of the integrated temperature measurement module and HEMT according to claim 3, characterized in that: The source pad is electrically connected to the source electrode by hybrid bonding, the gate pad is electrically connected to the gate electrode by hybrid bonding, and the drain pad is electrically connected to the drain electrode by hybrid bonding; At the heat generating area, the anode wiring is in direct contact with the first passivation layer, and the cathode wiring is in direct contact with the first passivation layer.

5. The semiconductor device integrating a temperature measurement module and a HEMT according to claim 3, wherein: The source pad is electrically connected to the source electrode via a solder bump, the gate pad is electrically connected to the gate electrode via a solder bump, and the drain pad is electrically connected to the drain electrode via a solder bump; At the heat generating area, the anode wiring is in contact with the first passivation layer via a solder bump, and the cathode wiring is in contact with the first passivation layer via a solder bump.

6. The semiconductor device integrating a temperature measurement module and a HEMT according to claim 5, wherein: The material of the solder bump includes at least one of Au, Sn, and In.

7. The semiconductor device integrating a temperature measurement module and a HEMT according to claim 1, wherein: The material of the substrate layer is silicon, silicon carbide, gallium oxide, diamond or gallium nitride; The material of the second epitaxial structure layer is silicon, silicon carbide, gallium oxide, diamond or gallium nitride; The material of the cathode includes at least one of Ti / Al / Ni / Au, Ti / Al and Ti / Au; The material of the anode is at least one of Au, Ag, Al, Pt, Ni, and Mo; The material of the first passivation layer and the second passivation layer is at least one of SiN, Si3N4 and SiO2.

8. A method for preparing a semiconductor device integrating a temperature measurement module and a HEMT, characterized in that: A semiconductor device for preparing the integrated temperature measurement module and HEMT according to any one of claims 1 to 7, the preparation method comprising: A temperature measurement module and a HEMT device are prepared separately, wherein the HEMT device comprises: a first epitaxial structure layer, and a source, a gate, a drain, and a first passivation layer located on the same side surface of the first epitaxial structure layer; the gate is located between the source and the drain, and a heating area of ​​the HEMT device is located between the gate and the drain, and the heating area is close to one side of the gate, wherein the first passivation layer is at least corresponding to the heating area; and the temperature measurement module comprises: a substrate layer, a second epitaxial structure layer located on one side surface of the substrate layer, and a second epitaxial structure layer located on the side of the second epitaxial structure layer away from the substrate layer. an anode and a cathode on the surface thereof, a second passivation layer covering the exposed surface of the substrate layer and the second epitaxial structure layer on the anode side, a source pad, a gate pad, a drain pad, a source wiring, a gate wiring, a drain wiring, a cathode wiring and an anode wiring located on the side of the second passivation layer facing away from the substrate layer; the second epitaxial structure layer, the anode and the cathode forming a Schottky diode, the source pad being electrically connected to the source wiring, the gate pad being electrically connected to the gate wiring, the drain pad being electrically connected to the drain wiring, the anode being electrically connected to the anode wiring, and the cathode being electrically connected to the cathode wiring; The temperature measurement module and the HEMT device are bonded relative to each other, wherein the orthographic projection of the Schottky diode on the first passivation layer at least partially overlaps with the heating area, the source pad is electrically connected to the source, the gate pad is electrically connected to the gate, and the drain pad is electrically connected to the drain.

9. The method for preparing a semiconductor device comprising an integrated temperature measurement module and a HEMT according to claim 8, wherein: Bonding the temperature measurement module and the HEMT device relative to each other includes: Grinding the surface of the temperature measurement module on the side having the gate pad and the surface of the HEMT device on the side having the gate; Adjusting the relative alignment between the temperature measurement module and the HEMT device, wherein the source is aligned with the source pad, the gate is aligned with the gate pad, the drain is aligned with the drain pad, and the anode wiring and the cathode wiring are aligned with the heating area; The temperature measurement module and the HEMT device are bonded using a hybrid bonding process.

10. The method for preparing a semiconductor device of an integrated temperature measurement module and HEMT according to claim 8, wherein: Bonding the temperature measurement module and the HEMT device relative to each other includes: growing solder bumps on the source pad, the gate pad, the drain pad, the cathode wiring, and the anode wiring, respectively; Adjusting the relative alignment between the temperature measurement module and the HEMT device, wherein the source electrode is aligned with the solder bump of the source pad, the gate electrode is aligned with the solder bump of the gate pad, the drain electrode is aligned with the solder bump of the drain pad, and the solder bump of the anode wiring and the solder bump of the cathode wiring are aligned with the heat generating area; The temperature measurement module and the HEMT device are bonded.

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