Atomic layer deposition apparatus

Abstract

The present invention relates to a batch-type atomic layer deposition apparatus for performing an atomic layer deposition process by generating a remote plasma between a shower head and a cartridge to bring a process gas into a radical or ionic state, the batch-type atomic layer deposition apparatus comprising: a reaction chamber, a predetermined reaction space isolated from the outside is formed in the reaction chamber; the gas supply mechanism is arranged on one side of the reaction chamber and supplies process gas towards one direction in the reaction chamber; the gas discharging mechanism is arranged on the other side, opposite to the gas supply mechanism, in the reaction chamber, and is used for sucking the gas supplied by the gas supply mechanism and the gas in the reaction chamber and discharging the gas; a cartridge which is disposed between the gas supply mechanism and the gas discharge mechanism in the reaction chamber, and on which a plurality of substrates are mounted side by side in a state of being spaced apart from each other by a predetermined interval; and a plasma generation unit that is provided between the gas supply mechanism and the front end of the cartridge, and that generates plasma in a space in front of the cartridge.

Description

Technical Field

[0001] The present invention relates to a batch type atomic layer deposition apparatus, and more particularly, to a batch type atomic layer deposition apparatus for generating remote plasma between a shower head and a cassette to convert a process gas into a radical or ionic state and performing an atomic layer deposition process. Background Art

[0002] The atomic layer deposition method utilizes chemical reactions between gas molecules and is similar to the ordinary chemical vapor deposition method in this regard. However, the ordinary chemical vapor deposition method deposits reaction products generated by injecting a large number of gas molecules into a chamber simultaneously onto a substrate. In contrast, the atomic layer deposition method (ALD) injects a gas containing one source material into the chamber, allowing it to chemically adsorb onto a heated substrate, and then injects a gas containing another source material into the chamber. As a result, products generated by chemical reactions between the source materials are deposited on the substrate surface, and this is the difference between the two methods.

[0003] This atomic layer deposition method (ALD) has the advantages of excellent step coverage characteristics and the ability to deposit a pure thin film with a low impurity content, and is thus widely used now.

[0004] On the other hand, in an atomic layer deposition apparatus, a batch type atomic layer deposition apparatus that simultaneously performs a deposition process on multiple substrates to improve throughput loads multiple substrates into a reaction chamber while being spaced apart at a predetermined interval in a cassette, and in this state, repeatedly performs a cycle consisting of steps of supplying a source gas, purging, supplying a reaction gas, and purging multiple times.

[0005] However, as substrates become larger and have a larger area, the sizes of the processing chambers and shower heads of existing plasma devices are also increasing. Therefore, as the substrates become larger, problems such as differences in gas injection amounts and uneven plasma generation densities due to relative distance differences from the gas supply source are serious, and thus there is a problem of low quality of the thin film deposited on the substrate. Summary of the Invention

[0006] Technical Problem

[0007] The technical problem to be solved by the present invention is to provide a batch type atomic layer deposition apparatus for generating remote plasma between a shower head and a cassette to convert a process gas into a radical or ionic state and performing an atomic layer deposition process.

[0008] Technical Solution

[0009] The batch-type atomic layer deposition apparatus of the present invention aimed at solving the foregoing technical problems includes: a reaction chamber that forms a predetermined reaction space isolated from the outside inside; a gas supply mechanism that is disposed on one side of the reaction chamber and supplies process gas in one direction inside the reaction chamber; a gas discharge mechanism that is disposed on the other side of the reaction chamber opposite to the gas supply mechanism, sucks the gas supplied by the gas supply mechanism and the gas in the reaction chamber, and discharges it; a cassette that is disposed between the gas supply mechanism and the gas discharge mechanism inside the reaction chamber and mounts a plurality of substrates side by side at a predetermined interval; and a plasma generation unit that is disposed between the gas supply mechanism and the front end of the cassette and generates plasma in the space in front of the cassette.

[0010] Moreover, in the present invention, it is preferable that the plasma generation unit includes: a gas distribution electrode that is disposed between the gas supply mechanism and the front end of the cassette, transmits the gas supplied by the gas supply mechanism toward the cassette, and is connected to a plasma generation power source or grounded; and a power supply mechanism that grounds the gas supply mechanism when connecting the plasma generation power source to the gas distribution electrode, and grounds the gas distribution electrode when connecting the plasma generation power source to the gas supply mechanism.

[0011] In addition, in the present invention, it is preferable that a plurality of rows of gas injection holes or gas injection slits are formed on the gas distribution electrode in a manner matching the positions of the plurality of substrates mounted in the cassette.

[0012] In addition, in the present invention, it is preferable that the structure of the gas injection hole is: a large-diameter gas through-hole is formed by penetrating the gas distribution electrode in the direction of the gas supply mechanism, and a small-diameter gas through-hole with a diameter smaller than that of the large-diameter gas through-hole is formed by penetrating the gas distribution electrode in the direction of the cassette.

[0013] In addition, in the present invention, it is preferable that the structure of the gas injection slit is: gas passing slits with a predetermined interval are formed on the gas distribution electrode in the direction of the gas supply mechanism, and a row of small-diameter gas through-holes with a diameter smaller than the interval of the gas passing slits are formed along the gas passing slits in the direction of the cassette.

[0014] In addition, in the present invention, it is preferable that the power supply mechanism applies a plasma generation power source to the gas supply mechanism and grounds the gas distribution electrode.

[0015] In addition, in the present invention, it is preferable that the plasma generation unit includes a gas injection hole, which forms a large-diameter gas through-hole by penetrating the showerhead panel of the gas supply mechanism in the direction of the gas distribution electrode, and forms a small-diameter gas through-hole with a diameter smaller than that of the large-diameter gas through-hole by penetrating the showerhead panel of the gas supply mechanism in the direction opposite to the gas distribution electrode.

[0016] In addition, in the present invention, it is preferable that the plasma generation unit includes a gas injection slit, which forms a gas passage slit with a predetermined interval by penetrating the showerhead panel of the gas supply mechanism in the direction of the gas distribution electrode, and forms a small-diameter gas through-hole with a diameter smaller than the interval of the gas passage slit by penetrating the showerhead panel of the gas supply mechanism in the direction opposite to the gas distribution electrode.

[0017] In addition, in the present invention, it is preferable that the plasma generation unit includes: a power supply electrode, which is disposed at one end of the space between the gas supply mechanism and the cassette for accessing the plasma generation power supply; a ground electrode, which is disposed at a position facing the power supply electrode and grounded; and a power supply unit, which applies the plasma generation power supply to the power supply electrode.

[0018] In addition, in the present invention, it is preferable that the plasma generation unit includes: a power supply electrode, which is disposed at a predetermined interval in the space between the gas supply mechanism and the cassette in a direction consistent with the direction of the substrate mounted in the cassette, and for accessing the plasma generation power supply; a ground electrode, which is disposed at a plurality of positions separated from the power supply electrode between each of the plurality of power supply electrodes and grounded; and a power supply unit, which applies the plasma generation power supply to the power supply electrode.

[0019] In addition, in the batch-type atomic layer deposition apparatus of the present invention, it is preferable that the power supply electrode and the ground electrode are disposed at positions consistent with the substrate mounting slit of the cassette.

[0020] In addition, in the present invention, it is preferable that the power supply electrode includes: electrode plates, which are disposed at a predetermined interval in a plurality; and a connection portion, which connects the ends of the plurality of electrode plates and connects the plurality of electrode plates to the power supply unit.

[0021] In addition, in the present invention, it is preferable that the ground electrode includes: ground plates, which are disposed at a predetermined interval in a plurality; and a ground connection portion, which connects the ends of the plurality of ground plates and connects the plurality of ground electrodes to the power supply unit.

[0022] In addition, in the batch type atomic layer deposition apparatus of the present invention, it is preferable that the power electrode and the ground electrode are plate-shaped as a whole, and the space between the gas supply mechanism and the cassette is divided into a gas supply space that is the same as the substrate mounting space in the cassette.

[0023] In addition, in the present invention, it is preferable that the plasma is RF plasma, CCP plasma, ICP plasma, ECR plasma, or Pulse DC plasma. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A cross-sectional view schematically showing the structure of a batch type atomic layer deposition apparatus according to an embodiment of the present invention.

[0025] Figure 2 A view showing the structure of a gas distribution plate and gas injection holes according to an embodiment of the present invention.

[0026] Figure 3 A view showing the structure of a gas distribution plate and gas injection slits according to another embodiment of the present invention.

[0027] Figure 4 A cross-sectional view and a top view showing the structure of a gas distribution plate and gas injection holes according to still another embodiment of the present invention.

[0028] Figure 5 A cross-sectional view and a top view showing the structure of a gas distribution plate and gas injection slits according to still another embodiment of the present invention.

[0029] Figure 6 A cross-sectional view and a top view showing the structure of a gas supply mechanism and gas injection holes according to still another embodiment of the present invention.

[0030] Figure 7 A cross-sectional view and a top view showing the structure of a gas supply mechanism and gas injection slits according to still another embodiment of the present invention.

[0031] Figure 8 A cross-sectional view schematically showing the structure of a batch type atomic layer deposition apparatus according to another embodiment of the present invention.

[0032] Figure 9 A cross-sectional view schematically showing the structure of a batch type atomic layer deposition apparatus according to still another embodiment of the present invention.

[0033] Figure 10 A cross-sectional view schematically showing the structure of a power electrode and a ground electrode according to still another embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0034] BEST MODE FOR CARRYING OUT THE INVENTION

[0035] Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0036] The batch type atomic layer deposition apparatus 100 of the present embodiment is as Figure 1 shown, and may include a reaction chamber 110, a gas supply mechanism 120, a gas discharge mechanism 130, a cassette 140, and a plasma generation unit 150.

[0037] First, the reaction chamber 110 is a component that forms a predetermined reaction space isolated from the outside inside. In particular, in the present embodiment, the reaction chamber 110 has a structure that can isolate the reaction space from the outside space to form a vacuum state with a very low pressure. In order to ensure stable process conditions for the reaction chamber 110, an external chamber 160 may also be provided outside it as Figure 1 shown.

[0038] Then, the gas supply mechanism 120 is as Figure 1 shown, and is a component provided on one side of the reaction chamber 110 and supplying process gas in one direction inside the reaction chamber 110. That is, the gas supply mechanism 120 supplies process gas and purge gas in the direction of the cassette 140 in order to perform an atomic layer deposition process on a plurality of substrates loaded inside the reaction chamber 110.

[0039] Therefore, in the present embodiment, the gas supply mechanism 120 may have, for example, a showerhead panel structure formed with a plurality of gas injection holes to supply gas uniformly.

[0040] Then, the gas discharge mechanism 130 is as Figure 1 shown, and is a component provided on the other side of the reaction chamber 110 opposite to the gas supply mechanism 120, sucking in the gas supplied by the gas supply mechanism 120 and the gas inside the reaction chamber 110 and discharging it to the outside. That is, the gas discharge mechanism 130 strongly sucks in gas opposite to the gas supply mechanism 120, so as to form a uniform air flow in the reaction space inside the reaction chamber 110, sucking in the gas passing through the loading space of the cassette and discharging it to the outside.

[0041] Then, the cassette 140 is as Figure 1 shown, and is a component disposed between the gas supply mechanism 120 and the gas discharge mechanism 130 inside the reaction chamber 110, and arranging a plurality of substrates S side by side in a state of being separated by a predetermined interval. Therefore, in the cassette 140, a plurality of substrates S are arranged side by side in a parallel state with each other, and the interval between each substrate is maintained at an interval suitable for performing an atomic layer deposition process.

[0042] Then, the plasma generation unit 150 is as Figure 1As shown, it is a component that is disposed between the gas supply mechanism 120 and the front end of the cassette 140 and generates plasma in the space in front of the cassette 140. That is, the plasma generation unit 150 generates remote plasma in the space between the gas supply mechanism 120 and the front end of the cassette 140, and converts the process gas supplied from the gas supply mechanism 120 toward the cassette 140 into a radical or ionic state, so as to perform an atomic layer deposition process on the substrate S.

[0043] For this purpose, in the present embodiment, specifically as Figure 1 shown, the plasma generation unit 150 may be composed of a gas distribution electrode 152 and a power supply mechanism (not shown). First, the gas distribution electrode 152 is disposed between the gas supply mechanism 120 and the front end of the cassette 140, transmits the gas supplied from the gas supply mechanism 120 toward the cassette, and is a component connected to a high-frequency power source for generating plasma.

[0044] Therefore, on the gas distribution electrode 152, as Figure 2 shown, a gas distribution plate 154 is provided. The gas distribution plate 154 is formed with multiple rows of gas injection holes 156, so that the gas ejected from the gas supply mechanism 120 moves uniformly toward the cassette 140. At this time, it is preferable that the gas injection holes 156, as Figure 2 shown, have an arrangement that matches the positions of the multiple substrates S loaded in the cassette 140.

[0045] On the other hand, on the gas distribution plate 154a, as Figure 3 shown, multiple rows of gas injection slits 156a may also be formed. The gas injection slits 156a are formed as long slits, and it is preferable that the multiple gas injection slits 156a also have an arrangement that matches the positions of the multiple substrates S loaded in the cassette 140.

[0046] Moreover, the power supply mechanism (not shown) is a component that applies a plasma generation power supply to the gas distribution electrode 152 and grounds the gas supply mechanism 120. That is, the power supply mechanism is disposed outside the reaction chamber 110, applies a high-frequency power source for generating plasma to the gas distribution electrode 152, and grounds the gas supply mechanism 120 to create a plasma generation environment.

[0047] On the other hand, in the present embodiment, the power supply mechanism may also create a plasma generation environment by applying a plasma generation power supply to the gas supply mechanism 120 and grounding the gas distribution electrode 152.

[0048] <Embodiment 2>

[0049] The batch atomic layer deposition apparatus of this embodiment is similar to that of Embodiment 1 and may also include a reaction chamber, a gas supply mechanism, a gas discharge mechanism, a cassette, and a plasma generation unit. The reaction chamber, gas supply mechanism, gas discharge mechanism, and cassette are substantially the same as those of Embodiment 1, so they will not be repeated here.

[0050] However, in the batch atomic layer deposition apparatus of this embodiment, the structure of the plasma generation unit is different from that of Embodiment 1, especially the structure of the gas injection holes 256. Therefore, a detailed description is given here. Specifically, in this embodiment, the gas injection holes 256 are as Figure 4 shown and are realized by the following structure. That is, in the direction of the gas supply mechanism, a large-diameter gas through-hole 256a is formed through the gas distribution plate 254, and in the direction of the cassette, a small-diameter gas through-hole 256b with a diameter smaller than that of the large-diameter gas through-hole 256a is formed through the gas distribution plate 254.

[0051] According to the gas injection holes 256 having such a structure, there is an advantage of forming a higher density of plasma through each gas injection hole.

[0052] <Embodiment 3>

[0053] The batch atomic layer deposition apparatus of this embodiment is similar to that of Embodiment 1 and may also include a reaction chamber, a gas supply mechanism, a gas discharge mechanism, a cassette, and a plasma generation unit. The reaction chamber, gas supply mechanism, gas discharge mechanism, and cassette are substantially the same as those of Embodiment 1, so they will not be repeated here.

[0054] However, in the batch atomic layer deposition apparatus of this embodiment, the structure of the plasma generation unit is different from that of Embodiment 1, especially the structure of the gas injection slit 356. Specifically, in this embodiment, the gas injection slit 356 is as Figure 5 shown and is realized by the following structure. That is, on the gas distribution plate 354, in the direction of the gas supply mechanism, gas through-slits 356a with a predetermined interval are formed, and in the direction of the cassette, a row of small-diameter gas through-holes 356b with a diameter smaller than that of the gas through-slits 356a are formed along the gas through-slits 356a.

[0055] Similar to the gas injection holes 256 of Embodiment 2, the gas injection slit 356 having such a structure also has the advantage of forming a higher density of plasma by means of each gas injection slit 356a and gas through-hole 356b.

[0056] <Embodiment 4>

[0057] The batch atomic layer deposition apparatus of this embodiment is similar to that of Embodiment 1 and may also include a reaction chamber, a gas supply mechanism, a gas discharge mechanism, a cassette, and a plasma generation unit. The reaction chamber, the gas discharge mechanism, and the cassette are substantially the same as those of Embodiment 1, and thus will not be repeated.

[0058] However, in the batch atomic layer deposition apparatus of this embodiment, the structures of the gas supply mechanism and the plasma generation unit are different from those of Embodiment 1, especially the structure of the gas injection hole 456. Specifically, in this embodiment, the gas injection hole 456 is as Figure 6 shown and is implemented with the following structure, that is, in the direction of the gas distribution electrode, a large-diameter gas through-hole 456a is formed by penetrating the showerhead panel 422 of the gas supply mechanism, and in the direction opposite to the gas distribution electrode, a small-diameter gas through-hole 456b with a diameter smaller than that of the large-diameter gas through-hole 456a is formed by penetrating the showerhead panel 422 of the gas supply mechanism, and the small-diameter gas through-hole 456b communicates with the large-diameter gas through-hole 456a.

[0059] The gas injection hole 456 having such a structure, like the gas injection hole 256 of Embodiment 2, also has the advantage of forming a higher density of plasma through each gas injection hole.

[0060] <Embodiment 5>

[0061] The batch atomic layer deposition apparatus of this embodiment is similar to that of Embodiment 1 and may also include a reaction chamber, a gas supply mechanism, a gas discharge mechanism, a cassette, and a plasma generation unit. The reaction chamber, the gas discharge mechanism, and the cassette are substantially the same as those of Embodiment 1, and thus will not be repeated.

[0062] However, in the batch atomic layer deposition apparatus of this embodiment, the structures of the gas supply mechanism and the plasma generation unit are different from those of Embodiment 1, especially the structure of the gas injection slit 556. Specifically, in this embodiment, the gas injection slit 556 is as Figure 7 shown and is implemented with the following structure, that is, in the direction of the gas distribution electrode, the showerhead panel 522 of the gas supply mechanism is etched to form gas passage slits 556a with a predetermined interval, and in the direction opposite to the gas distribution electrode, a row of small-diameter gas through-holes 556b with a diameter smaller than the interval of the gas passage slits is formed along the gas passage slits.

[0063] The gas injection slit 556 having such a structure, like the gas injection hole 256 of Embodiment 2, also has the advantage of forming a higher density of plasma through each gas injection slit and gas through-hole.

[0064] <Embodiment 6>

[0065] The batch atomic layer deposition apparatus of this embodiment is similar to that of Embodiment 1 and may also include a reaction chamber, a gas supply mechanism, a gas discharge mechanism, a cassette, and a plasma generation unit. The reaction chamber, the gas supply mechanism, the gas discharge mechanism, and the cassette are substantially the same as those of Embodiment 1, and thus will not be repeated.

[0066] However, in the batch atomic layer deposition apparatus of this embodiment, the structure of the plasma generation unit is different from that of Embodiment 1, specifically as Figure 8 shown, and may include a power electrode 652, a ground electrode 654, and a power supply unit (not shown).

[0067] First, the power electrode 652 is a component element provided at one end in the space between the gas supply mechanism 620 and the cassette 640 and connected to a high-frequency power supply for generating plasma. Moreover, as Figure 8 shown, the ground electrode 654 is a component element provided at a position facing the power electrode 652 and grounded. Finally, the power supply unit applies a high-frequency power supply for generating plasma to the power electrode 652, thereby generating plasma in the space between the power electrode 652 and the ground electrode 654.

[0068] Specific implementation manners of the present invention

[0069] <Embodiment 7>

[0070] The batch atomic layer deposition apparatus of this embodiment, like that of Embodiment 1, may also include a reaction chamber, a gas supply mechanism, a gas discharge mechanism, a cassette, and a plasma generation unit. The reaction chamber, the gas supply mechanism, the gas discharge mechanism, and the cassette are substantially the same as those of Embodiment 1, and thus will not be repeated.

[0071] However, in the batch atomic layer deposition apparatus of this embodiment, the structure of the plasma generation unit is different from that of Embodiment 1, specifically as Figure 9 shown, and may include a power electrode 752, a ground electrode 754, and a power supply unit (not shown).

[0072] First, the power electrode 752 is a component element provided with a plurality of power electrodes spaced apart at a predetermined interval in the space between the gas supply mechanism 720 and the cassette 740 along a direction consistent with the direction of the substrate S mounted in the cassette 740 and connected to a plasma generation power supply.

[0073] Among them, the power electrode 752 is specifically as Figure 10As shown, it is composed of a plurality of electrode plates 752a and connecting portions 752b. The electrode plates 752a are composed of a plurality of conductive plates arranged in parallel with a predetermined interval therebetween, and the connecting portion 752b is a component that connects the ends of the plurality of electrode plates 752a and connects the plurality of electrode plates 752a to the power supply unit.

[0074] Then, as Figure 10 shown, the ground electrode 754 is a component that is provided between each of the plurality of power supply electrodes 752 and is provided in plurality and grounded at a distance from the power supply electrode 752. Specifically, the ground electrode 754 is composed of a plurality of ground plates 754b and a ground connection portion 754b. Of course, the ground electrode 754 and the power supply electrode 752 are arranged in an insulated state from each other.

[0075] First, as Figure 10 shown, a plurality of the ground plates 754a are arranged at a predetermined interval, and the interval between the ground plates 754a is set to be the same as the interval between the electrode plates 752a, and each ground plate 754a is disposed at the center of the adjacent electrode plates 752a. Moreover, the ground connection portion 754b is a component that connects the ends of the plurality of ground plates 754a and connects the plurality of ground plates 754a to the power supply unit.

[0076] Therefore, the interval between the plurality of ground plates 754a and the electrode plates 752a can be maintained at a predetermined value, and the plurality of ground plates 754a and the electrode plates 752a divide the space between the gas supply mechanism 720 and the cassette 740 into a gas supply space that is the same as the substrate mounting space in the cassette 740.

[0077] Then, the power supply unit is a component that applies a plasma generation power supply to the power supply electrode 752 and grounds the ground electrode 754.

[0078]

Industrial Applicability

[0079] According to the present invention, in the manufacturing processes of semiconductors, solar cells, display panels, etc., uniform atomic layer deposition processes can be performed on multiple large-area substrates. In particular, during the deposition operation, the film characteristics are improved, so it can be used in the semiconductor, solar cell, and display device industries.

Claims

1. A batch atomic layer deposition apparatus, comprising: A reaction chamber that forms a defined reaction space inside, isolated from the outside; A cassette disposed on one inner side of the reaction chamber and loaded with a plurality of substrates side by side at a defined interval; A gas supply mechanism disposed on the other side of the reaction chamber, supplying source gas toward the cassette; A plasma generation unit disposed between the gas supply mechanism and the front end of the cassette, generating plasma in the space in front of the cassette; A precursor supply mechanism disposed on the side wall of the reaction chamber, supplying precursor gas to the space between the plasma generation unit and the cassette; and A gas discharge mechanism disposed on the other side of the reaction chamber opposite to the gas supply mechanism, inhaling the gas supplied by the gas supply mechanism and the precursor supply mechanism and the gas in the reaction chamber and discharging it.

2. The batch atomic layer deposition apparatus according to claim 1, wherein The plasma generation unit includes: A gas distribution electrode disposed between the gas supply mechanism and the front end of the cassette, transferring the source gas supplied by the gas supply mechanism toward the cassette, and being connected to a plasma generation power source or grounded; and A power supply mechanism that grounds the gas supply mechanism when applying a plasma generation power source to the gas distribution electrode, and grounds the gas distribution electrode when applying a plasma generation power source to the gas supply mechanism.

3. The batch atomic layer deposition apparatus according to claim 2, wherein On the gas distribution electrode, multiple rows of gas injection holes or gas injection slits are formed in a manner matching the positions of the plurality of substrates loaded in the cassette.

4. The batch atomic layer deposition apparatus according to claim 3, wherein The structure of the gas injection hole is: In the direction of the gas supply mechanism, a large-diameter gas through-hole is formed through the gas distribution electrode, and in the direction of the cassette, a small-diameter gas through-hole with a diameter smaller than the large-diameter gas through-hole is formed through the gas distribution electrode.

5. The batch atomic layer deposition apparatus according to claim 3, wherein The structure of the gas injection slit is: In the direction of the gas supply mechanism, gas passing slits with a defined interval are formed, and in the direction of the cassette, a row of small-diameter gas through-holes with a diameter smaller than the interval of the gas passing slits are formed along the gas passing slits.

6. The batch atomic layer deposition apparatus according to claim 1, wherein The plasma generation unit includes: A power electrode disposed at one end of the space between the gas supply mechanism and the cassette, connected to a plasma generation power source; A ground electrode disposed at a position opposite to the power electrode and grounded; and A power supply unit that applies a plasma generation power source to the power electrode.

7. The batch atomic layer deposition apparatus according to claim 1, wherein: The plasma generating section includes: Power supply electrodes, which are arranged in a space between the gas supply mechanism and the cassette at a predetermined interval in a direction consistent with the direction of the substrate mounted in the cassette, and a plurality of them are provided for access to a plasma generating power supply; Ground electrodes, which are arranged between each of the plurality of power supply electrodes at a distance from the power supply electrodes and are grounded; and A power supply section, which applies a plasma generating power supply to the power supply electrodes.

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