Atomic deposition spraying cavity and atomic deposition equipment

Abstract

The invention relates to the technical field of atomic layer deposition technology, in particular to an atomic deposition spraying cavity and atomic deposition equipment, which comprises an upper cavity cover, a spraying head, a gas homogenizing assembly, a substrate and a lower cavity, the upper cavity cover and the lower cavity can define a spraying cavity, the substrate is arranged on the lower cavity and used for bearing a substrate, and the spraying head is arranged on the upper cavity cover; the gas uniformizing assembly is arranged between the spraying head and the substrate and is provided with a gas dispersing plate, a buffer layer and a uniformizing plate; a plurality of air dispersing holes are uniformly formed in the air dispersing plate in a penetrating manner, and a plurality of turbulent flow bulge structures are uniformly arranged at intervals; the gas dispersing plate, the buffer layer and the uniform plate are laminated from top to bottom to form a three-stage flow field regulation and control system, so that the gas flow uniformity and stability are remarkably improved, and the technical problems that in the prior art, the gas homogenizing effect of a single-layer gas homogenizing plate in a spraying cavity is limited, spraying is often uneven, and a compact film cannot be formed are solved; the thickness uniformity of the prepared film is ensured, and the film preparation quality is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of atomic layer deposition, and particularly relates to an atomic deposition spray chamber and an atomic deposition device. Background Art

[0002] Atomic layer deposition technology (ALD) is a thin film deposition technology based on chemical vapor deposition (CVD). Each precursor is saturated and adsorbed on the surface to form a densely covered thin film. It generally has four steps, namely, pulsing the first precursor, purging with an inert carrier gas, pulsing the second precursor, and purging with the inert carrier gas again.

[0003] Existing atomic layer deposition devices generally have a sealed deposition chamber, in which a spray chamber and a deposition table are provided. The substrate to be deposited is arranged on the deposition table, and process gas is ejected through a spray component and sprayed onto the substrate. Thus, the gas outlet uniformity of the spray chamber has a decisive influence on the deposition quality. Therefore, the spray chamber is generally provided with a gas distribution plate with uniform mesh holes to ensure the uniformity of the spray chamber.

[0004] However, the gas distribution effect of a single-layer gas distribution plate is limited, often resulting in problems such as uneven spraying and inability to form a dense thin film in the spray chamber when a relatively thick thin film needs to be prepared. Summary of the Invention

[0005] The purpose of the present invention is to provide an atomic deposition spray chamber and an atomic deposition device to solve the technical problem that the gas distribution effect of the single-layer gas distribution plate in the existing spray chamber is limited, often resulting in uneven spraying and inability to form a dense thin film in the spray chamber when a relatively thick thin film needs to be prepared.

[0006] In a first aspect, an atomic deposition spray chamber provided by the present invention includes an upper chamber cover, a spray head, a gas distribution assembly, a substrate, and a lower chamber; The upper chamber cover and the lower chamber can be detachably connected to enclose a sealed spray chamber. The substrate is arranged on the lower chamber and is used to carry a substrate. The spray head is arranged on the upper chamber cover and is oriented towards the lower chamber; The gas distribution assembly is arranged between the spray head and the substrate. The gas distribution assembly has a gas dispersion plate, a buffer layer, and a uniform plate. The gas dispersion plate, the buffer layer, and the uniform plate are stacked from top to bottom. The gas dispersion plate, the buffer layer, and the uniform plate cooperate to form a three-stage flow field regulation system to enable the sprayed air flow to achieve a flow state transformation from laminar flow to turbulent flow and from turbulent flow to quasi-laminar flow; The gas dispersion plate is evenly provided with a number of gas dispersion holes, the gas dispersion holes penetrate the gas dispersion plate, and a plurality of flow disturbance convex structures are evenly spaced on the gas dispersion plate.

[0007] Further, a plurality of the spoiler bump structures are arranged in a matrix on the air-diffusing plate. The height of the spoiler bump structure is 0.2 to 0.5 times the distance between the spray head and the air-diffusing plate.

[0008] Further, a gradually expanding flow channel is provided at the bottom end of the air-diffusion hole, and the cross-sectional area of the gradually expanding flow channel increases along the gas flow direction.

[0009] Further, the buffer layer includes a plurality of buffer plates arranged in parallel, and the buffer layer can absorb and resolve the unstable energy in the airflow.

[0010] Further, the uniform plate has a plurality of diversion micro-channels, and the plurality of diversion micro-channels communicate to form a micro-channel network.

[0011] Further, the atomic deposition spray cavity further includes an electric field emission component; The electric field emission component is disposed in the lower cavity, and the electric field emission component faces the substrate to construct an electrostatic field environment on the surface of the substrate.

[0012] Further, the atomic deposition spray cavity further includes an air extraction passage; The air extraction passage is disposed in the lower cavity. One end of the air extraction passage is respectively communicated with a plurality of air extraction ports, and the plurality of air extraction ports are uniformly disposed on the periphery of the substrate. The other end of the air extraction passage is disposed at the bottom of the lower cavity and is connected to an external air extraction component.

[0013] Further, the spray head has a main pipeline and a plurality of branch nozzles. The plurality of branch nozzles are respectively connected to one end of the main pipeline. The other end of the main pipeline is used to be connected to an external process gas source. The plurality of branch nozzles are uniformly arranged on the upper cavity cover, and the branch nozzles face the air-diffusing plate.

[0014] Further, the distance between adjacent spoiler bump structures is set in proportion to the distribution density of the branch nozzles.

[0015] In a second aspect, the present invention further provides an atomic deposition apparatus, including the above-mentioned atomic deposition spray cavity.

[0016] Compared with the prior art, an atomic deposition spray cavity provided by the present invention includes an upper cavity cover, a spray head, a gas equalizing assembly, a substrate, and a lower cavity; the upper cavity cover and the lower cavity can be detachably connected to enclose a sealed spray cavity, the substrate is arranged on the lower cavity, the substrate is used to carry a substrate, the spray head is arranged on the upper cavity cover and faces the lower cavity; the gas equalizing assembly is arranged between the spray head and the substrate, the gas equalizing assembly has a gas diffusing plate, a buffer layer, and a uniform plate, the gas diffusing plate, the buffer layer, and the uniform plate are stacked from top to bottom, and the gas diffusing plate, the buffer layer, and the uniform plate cooperate to form a three-stage flow field regulation system, so that the sprayed air flow realizes the flow state transformation from laminar flow to turbulent flow and from turbulent flow to quasi-laminar flow; a plurality of air diffusing holes are uniformly arranged on the gas diffusing plate, the air diffusing holes penetrate through the gas diffusing plate, and a plurality of flow disturbing convex structures are uniformly arranged at intervals on the gas diffusing plate; by arranging a gas equalizing assembly composed of a gas diffusing plate, a buffer layer, and a uniform plate between the spray head and the substrate, and a plurality of flow disturbing convex structures are uniformly arranged at intervals on the gas diffusing plate, the air flow can be redirected and decelerated, a separation zone can be formed, and the concentrated air flow can be decomposed into tiny branches, realizing the preliminary fine dispersion of the air flow, and the gas diffusing plate, the buffer layer, and the uniform plate are stacked from top to bottom to form a three-stage flow field regulation system, thereby sequentially converting the sprayed air flow into laminar flow, turbulent flow, and quasi-laminar flow, and further significantly improving the uniformity and stability of the air flow, solving the technical problems that the gas equalizing effect of the single-layer gas equalizing plate in the existing spray cavity is limited, and when a relatively thick film needs to be prepared in the spray cavity, the spraying is often uneven and a dense film cannot be formed, ensuring the thickness uniformity of the film preparation and improving the film preparation quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings required to be used in the description of the specific embodiments or the prior art. Obviously, the following drawings are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0018] Figure 1 It is a schematic diagram of the overall structure of the atomic deposition spray cavity provided by the embodiment of the present invention; Figure 2 It is an exploded view of the structure of the gas equalizing assembly in the atomic deposition spray cavity provided by the embodiment of the present invention; Figure 3 It is a schematic diagram of the structure of the gas diffusing plate in the atomic deposition spray cavity provided by the embodiment of the present invention; Figure 4 It is a schematic diagram of the structure of the air diffusing holes in the gas diffusing plate of the atomic deposition spray cavity provided by the embodiment of the present invention; Figure 5 It is a schematic diagram of the structure of the buffer layer in the atomic deposition spray cavity provided by the embodiment of the present invention.

[0019] Reference numerals: 100, upper cavity cover; 200, spray head; 210, main pipeline; 220, branch nozzles; 300, gas equalizing component; 310, air diffusing plate; 311, air diffusing holes; 3111, gradually expanding channel; 312, flow disturbing convex structure; 320, buffer layer; 321, buffer plate; 3211, buffer holes; 330, uniform plate; 331, diversion microchannels; 340, spacer block; 400, substrate; 500, lower cavity; 600, air extraction passage. Specific embodiments

[0020] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. Generally, the components of the embodiments of the present invention described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.

[0021] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed present invention, but merely represents selected embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.

[0022] It should be noted that: similar reference numerals and letters denote similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0023] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of this application is usually placed during use. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. In addition, the terms "first", "second", "third", etc. are only used for descriptive distinction and cannot be construed as indicating or implying relative importance.

[0024] In addition, terms such as "horizontal", "vertical", "hanging", etc. do not mean that the components are required to be absolutely horizontal or hanging, but can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0025] In the description of the present invention, it should also be noted that, unless otherwise clearly specified and limited, the terms "set", "installed", "connected", and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0026] The following will describe in detail some embodiments of the present invention with reference to the accompanying drawings. Without conflict, the following embodiments and the features in the embodiments can be combined with each other.

[0027] Embodiment 1 As Figures 1 to 3 shown, the embodiment of the present invention provides an atomic deposition spray chamber, which includes an upper chamber cover 100, a spray head 200, a gas equalizing component 300, a substrate 400, and a lower chamber 500; the upper chamber cover 100 and the lower chamber 500 can be detachably connected to enclose a closed spray chamber, the substrate 400 is arranged on the lower chamber 500, the substrate 400 is used to carry a substrate, the spray head 200 is arranged on the upper chamber cover 100 and faces the lower chamber 500; the gas equalizing component 300 is arranged between the spray head 200 and the substrate 400, the gas equalizing component 300 has a diffuser plate 310, a buffer layer 320, and a uniform plate 330, the diffuser plate 310, the buffer layer 320, and the uniform plate 330 are stacked from top to bottom, and the diffuser plate 310, the buffer layer 320, and the uniform plate 330 cooperate to form a three-stage flow field regulation system to enable the sprayed gas flow to achieve a flow state transition from laminar flow to turbulent flow and from turbulent flow to quasi-laminar flow; a plurality of air dispersion holes 311 are uniformly arranged on the diffuser plate 310, the air dispersion holes 311 penetrate through the diffuser plate 310, and a plurality of flow disturbance convex structures 312 are uniformly arranged at intervals on the diffuser plate 310.

[0028] That is, an atomic deposition spray cavity provided by an embodiment of the present invention is provided. By arranging a gas uniforming assembly 300 composed of a gas diffusing plate 310, a buffer layer 320, and a uniform plate 330 between a spray head 200 and a substrate 400, the gas diffusing plate 310 is uniformly and spacedly provided with a flow disturbing convex structure 312, which can deflect and decelerate the air flow, form a separation zone, and decompose the concentrated air flow into tiny branches, realizing the preliminary fine dispersion of the air flow. The gas diffusing plate 310, the buffer layer 320, and the uniform plate 330 are stacked from top to bottom to form a three-stage flow field regulation system, thereby successively converting the sprayed air flow into laminar flow, turbulent flow, and quasi-laminar flow, and then significantly improving the uniformity and stability of the air flow, solving the technical problems in the prior art that the gas uniforming effect of a single-layer gas uniforming plate in a spray cavity is limited, often resulting in uneven spraying and inability to form a dense film when a relatively thick film needs to be prepared in the spray cavity, ensuring the thickness uniformity of the film preparation, and improving the film preparation quality.

[0029] Specifically, in this embodiment, the upper cavity cover 100 is integrally in a cuboid shape, with a hollow cavity inside and an opening at the bottom. The lower cavity 500 has the same shape as the upper cavity cover 100 and is symmetrically arranged. The two can be connected by bolts to form a closed spray cavity. A sealing gasket can be arranged at the docking position of the upper cavity cover 100 and the lower cavity 500 to ensure the sealing effect of the spray cavity. A horizontal support platform is arranged in the cavity of the lower cavity 500, and the substrate 400 is fixed on the support platform. In this embodiment, the substrate 400 is set as a flat glass, so as to be convenient for presenting on the substrate. A spray head 200 is arranged at the top of the upper cavity cover 100. The spray head 200 extends into the cavity inside the upper cavity cover 100 through a through hole on the upper cavity cover 100 and sprays gas downward. The gas uniforming assembly 300 is arranged in the cavity inside the upper cavity cover 100, and the sprayed gas passes through the gas uniforming assembly 300 from top to bottom, and thus is uniformly sprayed on the substrate on the substrate 400.

[0030] The air equalizing component 300 is formed by laminating a diffuser plate 310, a buffer layer 320, and a uniform plate 330. The sprayed air flow is converted into a laminar flow state via the diffuser plate 310, then into a turbulent flow state via the buffer layer 320, and finally into a quasi-laminar flow state via the uniform plate 330. Among the three-layer structure of the air equalizing component 300, the diffuser plate 310 is generally flat, and a plurality of spoiler protrusion structures 312 are arranged on the diffuser plate 310. The spoiler protrusion structures 312 are approximately conical and are evenly distributed on the diffuser plate 310. The air diffusing holes 311 are arranged in a matrix and penetrate the diffuser plate 310 in the vertical direction. In other embodiments of the present application, the air diffusing holes 311 may penetrate the diffuser plate 310 at an inclined angle. When the sprayed gas impacts the diffuser plate 310, through fluid mechanics phenomena such as boundary layer separation and vortex generation by the conical structure, the air flow is redirected and decelerated, forming a separation zone and vortices, decomposing the concentrated air flow into tiny branches, realizing the preliminary refined dispersion of the air flow, significantly improving the uniformity and stability of the air flow. Through three-stage flow field regulation, the gas Reynolds number can be reduced from 2000 - 5000 to 50 - 200, and the gas flow velocity non-uniformity in the simulation data is less than 5%.

[0031] Preferably, a plurality of spoiler protrusion structures 312 are arranged in a matrix on the diffuser plate 310.

[0032] Specifically, in this embodiment, the spoiler protrusion structures 312 are arranged in a matrix on the diffuser plate 310. Thus, the spacing between the spoiler protrusion structures 312 is uniformly fixed and can be optimized through a CFD model, thereby adjusting the spacing between the spoiler protrusion structures 312 and further optimizing the dispersion effect of the air flow.

[0033] Furthermore, the height (h) of the spoiler protrusion structures 312 is 0.2 to 0.5 times the spacing (d) between the spray head 200 and the diffuser plate 310.

[0034] Specifically, according to the Idelchik formula, the relationship between the local resistance coefficient ζ of the protrusion structure and the geometric parameters is as follows:

[0035] Among them, K = 0.8 - 1.2 (empirical coefficient). To achieve the balance between energy consumption and performance, ζ = 0.2 - 0.8, and the calculation results in 0.2 ≤ h / d ≤ 0.5.

[0036] With the cavity structure, size, and the type and quantity of the source remaining unchanged, the height of the flow disturbance protrusion structure 312 is changed to a ratio of the distance between the shower head 200 and the gas diffusing plate 310, and an atomic deposition experiment is carried out. Nine points at the same position on the substrate 400 are selected for data statistics, and the experimental results are shown in Table 1. The deposition rate refers to the thickness of each deposition (unit: Å), representing the speed of deposition. The non-uniformity is calculated by the formula (Max - Min) / (2 * Ave) * 100%, where Max, Min, and Ave represent the maximum value, minimum value, and average value of the deposition thickness of the substrate 400. The smaller the value of the non-uniformity, the more uniform the deposition effect.

[0037] Table 1 Deposition conditions corresponding to different ratios

[0038] The data shows that in the range of h / d = 0.2 - 0.5, the process stability is enhanced, and the comprehensive performance reaches the optimal balance point.

[0039] Specifically, in this embodiment, the distance between the shower head 200 and the gas diffusing plate 310 is the vertical distance from the bottom of the shower head 200 to the horizontal plate surface of the gas diffusing plate 310. The height of the flow disturbance protrusion structure 312 is 0.3 times the distance between the shower head 200 and the gas diffusing plate 310.

[0040] Preferably, the distance (s) between adjacent flow disturbance protrusion structures 312 and the distribution density (d) of the branch nozzles 220 are set in proportion.

[0041] Specifically, in this embodiment, the ratio of the distance (s) between adjacent flow disturbance protrusion structures 312 to the distribution density (d) of the branch nozzles 220 is set to s / d = 0.3 - 0.6. With the cavity structure and size remaining unchanged, the ratio of the distance between adjacent flow disturbance protrusion structures 312 to the distribution density of the branch nozzles 220 is changed, and a flow field simulation is carried out using software. The flow velocities at fifty positioning points on the surface of the substrate 400 are selected, and the non-uniformity of the flow velocity is calculated by the formula (Max - Min) / (Max + Min) * 100%, where Max and Min represent the maximum value and minimum value of the flow velocities among the fifty points. The smaller the non-uniformity number, the more uniform the flow field. The simulation calculation results are shown in Table 2.

[0042] Table 2 Flow field conditions corresponding to different ratios

[0043] Specifically, in this embodiment, the ratio of the distance between adjacent flow disturbance protrusion structures 312 to the distribution density of the branch nozzles 220 is set to 0.4.

[0044] Such as Figure 4As shown, further, a gradually expanding flow channel is provided at the bottom end of the air dispersion holes 311, and the cross-sectional area of the gradually expanding flow channel increases along the gas flow direction.

[0045] Specifically, the lower end of the air dispersion holes 311 is in the shape of a tapered cylinder, and its diameter gradually increases from top to bottom, thereby forming a gradually expanding flow channel with a gradually increasing cross-sectional area. Thus, the air flow is dispersed again through the gradually expanding flow channel.

[0046] As Figure 5 shown, further, the buffer layer 320 includes a plurality of buffer plates 321 arranged in parallel, and the buffer layer 320 is configured to absorb and resolve the unstable energy in the air flow.

[0047] Specifically, the buffer layer 320 is specifically made of multiple layers of buffer plates 321. All the buffer plates 321 are horizontally arranged and stacked from top to bottom. The buffer plates 321 are made of materials with strong corrosion resistance, high temperature resistance, and high strength. They are closely attached to each other and maintain a stable connection relationship. Buffer holes 3211 are provided through the buffer plates 321, and the buffer holes 3211 on each buffer plate 321 are connected from top to bottom. When the air flow passes through the buffer layer 320, it flows through the buffer holes 3211. Through the momentum exchange principle of viscous fluids and Bernoulli's principle, the unstable energy in the air flow is absorbed and resolved, further smoothing the fluctuations of the air flow and making it more stable.

[0048] Preferably, the air equalizing assembly 300 further includes spacer blocks 340. A plurality of spacer blocks 340 are arranged between the buffer plates 321 and the uniform plate 330. The top of the spacer blocks 340 abuts against the buffer plates 321, and the bottom of the spacer blocks 340 abuts against the uniform plate 330.

[0049] Specifically, the spacer blocks 340 are fixed around the buffer layer 320 and are arranged between the buffer plates 321 and the uniform plate 330, thereby providing support for the buffer layer 320. In this embodiment, the spacer blocks 340 are made of ceramic materials with high strength and low friction coefficients, which can not only provide stable support for the buffer layer 320 to prevent it from shifting or deforming under the impact of the air flow, but also reduce the friction and vibration between the buffer layer 320 and other components of the cavity, further ensuring the smooth transmission of the air flow in the cavity.

[0050] Further, the uniform plate 330 has a plurality of flow guiding micro-channels 331, and the plurality of flow guiding micro-channels 331 communicate to form a micro-channel network.

[0051] Specifically, the uniform plate 330 is made of a porous metal material with a uniform pore distribution. Due to the relatively uniform internal pore structure of the porous metal material, a network of linear diversion microchannels 331 is formed. Such a shaped passage has a relatively low flow resistance in the microchannel, and the fluid can flow at a relatively stable speed therein. Under the action of the pressure difference, the air flow flows according to the law described by Darcy's law. When the air flow flows out of the buffer layer 320 and enters the uniform plate 330, it will be finely adjusted for the last time under the guidance of these pores and channels, so that when the air flow leaves the uniform plate 330 and enters the cavity, it can reach a highly dispersed and stable laminar flow state.

[0052] Furthermore, the atomic deposition spray cavity further includes an electric field emission component; the electric field emission component is arranged in the lower cavity 500 and is oriented towards the substrate 400 to construct an electrostatic field environment on the surface of the substrate 400.

[0053] Specifically, the electric field emission component includes an electric field emission source and a power supply component. The electric field emission source is used to emit an electric field and is fixed in the cavity inside the lower cavity 500. The electric field emission component is oriented towards the substrate 400, thereby constructing an electrostatic field environment on the surface of the substrate 400. Under the action of the electrostatic field, the source material is affected by electrostatic induction, its charge distribution changes, and then it migrates towards the glass substrate 400 under the drive of the electric field force and finally deposits on the surface of the glass substrate 400 through electrostatic adsorption, thus effectively ensuring the deposition effect of the source.

[0054] Furthermore, the atomic deposition spray cavity further includes an air extraction passage 600; the air extraction passage 600 is arranged in the lower cavity 500. One end of the air extraction passage 600 is respectively connected to a plurality of air extraction ports, and the plurality of air extraction ports are evenly arranged on the periphery of the substrate 400. The other end of the air extraction passage 600 is arranged at the bottom of the lower cavity 500 and is connected to an external air extraction component.

[0055] Specifically, a plurality of air extraction ports are evenly arranged on the periphery of the substrate 400, and each air extraction port is connected to an air extraction passage 600. The multiple air extraction passages 600 converge into a total air extraction passage 600 and extend to the bottom of the lower cavity 500 and are connected to an external air extraction component. When the air extraction operation is performed, the gas flows along a preset path, skillfully bypasses the substrate 400, and is stably extracted from the lower cavity 500, effectively avoiding the direct impact and interference of the air flow on the surface of the substrate 400, thereby creating a stable and uniform physical environment for the deposition process of the source on the surface of the substrate 400.

[0056] Preferably, the spray head 200 has a main pipeline 210 and a plurality of spray nozzles 220. The plurality of spray nozzles 220 are respectively connected to one end of the main pipeline 210, and the other end of the main pipeline 210 is used to be connected to an external process gas source. The plurality of spray nozzles 220 are evenly arranged on the upper cavity cover 100, and the spray nozzles 220 are arranged facing the air diffusing plate 310.

[0057] Specifically, one end of the main pipeline 210 is used to be connected to an external process gas source, and the other end is connected to the spray nozzles 220 through respective branch pipelines. The plurality of spray nozzles 220 are evenly arranged in a matrix on the upper cavity cover 100, so as to uniformly spray air flow onto the air diffusing plate 310.

[0058] The present invention also provides an atomic deposition device, including all the structures of the above-mentioned atomic deposition spray cavity, and naturally can achieve all the effects of the above-mentioned atomic deposition spray cavity, which will not be elaborated here.

[0059] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An atomic deposition spray chamber, characterized in that, It includes an upper cavity cover (100), a spray head (200), a gas equalizing component (300), a substrate (400) and a lower cavity (500); The upper cavity cover (100) and the lower cavity (500) can be detachably connected to enclose a sealed spray cavity. The substrate (400) is arranged on the lower cavity (500), and the substrate (400) is used to carry a substrate. The spray head (200) is arranged on the upper cavity cover (100) and is oriented towards the lower cavity (500); The gas equalizing component (300) is arranged between the spray head (200) and the substrate (400). The gas equalizing component (300) has a gas diffusing plate (310), a buffer layer (320) and a uniform plate (330). The gas diffusing plate (310), the buffer layer (320) and the uniform plate (330) are stacked from top to bottom. The gas diffusing plate (310), the buffer layer (320) and the uniform plate (330) cooperate to form a three-stage flow field regulation system to enable the sprayed air flow to achieve a flow state transformation from laminar flow to turbulent flow and from turbulent flow to quasi-laminar flow; The gas diffusing plate (310) is evenly provided with a number of gas diffusion holes (311). The gas diffusion holes (311) penetrate through the gas diffusing plate (310), and a plurality of flow disturbance convex structures (312) are evenly spaced on the gas diffusing plate (310).

2. The atomic deposition spray chamber according to claim 1, wherein A plurality of the flow disturbance convex structures (312) are arranged in a matrix on the gas diffusing plate (310), and the height of the flow disturbance convex structures (312) is 0.2 to 0.5 times the distance between the spray head (200) and the gas diffusing plate (310).

3. The atomic deposition spray chamber according to claim 1, characterized in that, The bottom end of the gas diffusion hole (311) is provided with an expanding flow channel, and the cross-sectional area of the expanding flow channel increases along the gas flow direction.

4. The atomic deposition spray chamber according to claim 2, wherein The buffer layer (320) includes a number of buffer plates (321) arranged in parallel. The buffer layer (320) is configured to absorb and resolve the unstable energy in the air flow.

5. The atomic deposition spray chamber according to claim 2, characterized in that, The uniform plate (330) has a number of guiding micro-channels (331), and a number of the guiding micro-channels (331) communicate to form a micro-channel network.

6. The atomic deposition spray chamber according to any one of claims 1-5, characterized in that, The atomic deposition spray cavity further includes an electric field emission component; The electric field emission component is arranged on the lower cavity (500), and the electric field emission component is oriented towards the substrate (400) to construct an electrostatic field environment on the surface of the substrate (400).

7. The atomic deposition spray chamber according to any one of claims 1-5, characterized in that, The atomic deposition spray cavity further includes an air extraction passage (600); The air extraction passage (600) is arranged in the lower cavity (500). One end of the air extraction passage (600) is respectively communicated with a number of air extraction ports. A number of the air extraction ports are evenly arranged on the periphery of the substrate (400). The other end of the air extraction passage (600) is arranged at the bottom of the lower cavity (500) and is connected to an external air extraction component.

8. The atomic deposition spray chamber according to any one of claims 2-5, characterized in that, The spray head (200) has a main pipeline (210) and a plurality of spray nozzles (220). The plurality of spray nozzles (220) are respectively connected to one end of the main pipeline (210), and the other end of the main pipeline (210) is used to be connected to an external process gas source. The plurality of spray nozzles (220) are evenly arranged on the upper cavity cover (100), and the spray nozzles (220) are arranged towards the air dispersion plate (310).

9. The atomic deposition spray chamber according to claim 8, wherein, The distance between adjacent flow disturbance convex structures (312) is set in proportion to the distribution density of the spray nozzles (220).

10. An atomic deposition device, characterized in that, It includes the atomic deposition spray cavity according to any one of claims 1-9.

Images