Area array spectral domain interference semiconductor multilayer film measuring device of ultra-wideband synthetic light source and implementation method of area array spectral domain interference semiconductor multilayer film measuring device

Abstract

The invention discloses an area array spectral domain interference semiconductor multilayer film measuring device of an ultra-wideband synthetic light source and an implementation method, and belongs to the technical field of precision optical measurement. The area array spectral domain interference detection device comprises an ultra-wideband synthesis light source, an interference system, an area array spectrometer, a semiconductor multilayer film detected piece and the like. According to the measuring method, an ultra-wide-band synthetic light source with good interference is used for exciting the layered contour of the multilayer film and cross-scale thickness distribution full-field information, a carrier multi-parameter interference signal is formed by an interference system, interference information is recorded by an area array spectrometer, and finally, through array spectrum analysis, the thickness of the multilayer film is measured. And synchronously obtaining layered contour and thickness distribution information of the multilayer film.

Description

Technical Field

[0001] The present invention belongs to the technical field of precision optical measurement, and specifically relates to an interference measurement device and implementation method based on an ultra-wideband synthetic light source and a planar array spectrometer, which is used for high-precision non-destructive detection of the three-dimensional profile and thickness distribution of multi-layer films in semiconductor manufacturing. Background Art

[0002] With the development of the structure of semiconductor devices towards micro-nano integration, traditional single-layer films can no longer meet the requirements. The development of semiconductor multi-layer films with higher performance, lower power consumption, and higher integration has greatly improved the performance, power consumption, and integration of transistors. Existing research mostly focuses on specific material systems and detection methods, and there are still technical bottlenecks in key links such as real-time dynamic monitoring and cross-scale correlation analysis.

[0003] Therefore, the present invention proposes a measurement device and method for a planar array spectral domain interference of an ultra-wideband synthetic light source for semiconductor multi-layer films, which is a non-destructive measurement method without sample preparation, ensuring the integrity and non-damage of the multi-layer film. Dynamic measurement is achieved through multi-information synchronous carrier, that is, only one planar array spectral domain interference image is required to achieve the carrier and tomographic reconstruction of the full-field information of the layered profile and thickness distribution. Summary of the Invention

[0004] The object of the present invention is to provide a measurement device and implementation method integrating an ultra-wideband synthetic light source and planar array detection, aiming at the limitation of the existing semiconductor multi-layer film measurement technology mainly based on single-point scanning measurement, so as to achieve precise measurement of the layered profile and thickness distribution of semiconductor multi-layer films with high efficiency, high precision, and good stability.

[0005] The present invention is realized through the following technical solutions: A measurement device for planar array spectral domain interference of an ultra-wideband synthetic light source for semiconductor multi-layer films includes an ultra-wideband synthetic light source, an interference system, a planar array spectrometer, a semiconductor multi-layer film to be measured, and a computer processing unit; the ultra-wideband synthetic light source is a continuous spectrum generated by coupling multiple tunable lasers through a nonlinear optical fiber. During the nonlinear optical fiber coupling process, a nonlinear effect is generated, and the nonlinear effect includes self-phase modulation (SPM) or four-wave mixing (FWM); the interference system includes a spatial filter, a collimating lens, a beam splitter, a reference mirror, an objective lens, and an imaging lens.

[0006] As a preferred embodiment, the continuous spectrum generated by the ultra-wideband synthetic light source passes through a spatial filter, a collimating lens, a beam splitter, and a reference mirror, and reaches the semiconductor multilayer film under test. The light reflected back from the surface of the semiconductor multilayer film under test and the light reflected back from the surface of the reference mirror interfere with each other, and the interference signal is transmitted to the computer processing unit through the area array spectrometer.

[0007] A method for realizing an area array spectral domain interference semiconductor multilayer film measuring device of an ultra-wideband synthetic light source includes the following steps: Step S1: System calibration: including cavity length calibration and reference mirror error calibration; Step S2: Focusing and positioning: Ensure that the interference objective lens and the surface of the device under test are in the best imaging plane to maximize the interference fringe contrast; Step S3: Area array spectral data acquisition: The ultra-wideband synthetic light source excites the multilayer film reflection signal, and the area array spectrometer obtains the interference signal by single exposure , where represents the spatial coordinates of the sample, represents the wavelength;

[0008] Step S4: Data recombination: Extract the signal data from the spectral domain interference signal collected by the obtained area array spectrometer , where i = 1, 2... n, j = 1, 2... p, and n and p are the pixel points in the horizontal and vertical directions of the area array spectrometer respectively; k = 1, 2... N, is the wavelength tuning range, extract the light intensity signal data for recombination; the recombined signal data forms a light intensity array , where represents the k-th wavelength channel, establish a quantitative model of the phase difference versus the light intensity I from the recombined signal data, and represent the spatial coordinates of the sample in the k-th wavelength channel k array data at the position; ; Step S5: Information separation: Design the sampling weight function and use the weighted multi-step algorithm to separate the multi-surface information of the device under test; Step S6: Stratified thickness estimation: Based on the optical path difference, initially estimate the thickness of each layer, carry out threshold detection, and thus locate the position of the reflection peak , and perform the initial thickness calculation: , where is the position of the optical path difference peak of the k-th layer, is the reference refractive index of the material; Step S7: Thickness and three-dimensional contour calculation: According to the light intensity array data, based on the initial thickness of step S6 As the starting point of iterative optimization, thickness calculation is performed based on the initial thickness in step S6. Provide the spatial distribution of the thickness of each layer, perform three-dimensional profile reconstruction, and output the thickness distribution and the three-dimensional profile ; Step S8: Interlayer coupling compensation and optimization: Based on the thickness and refractive index output in step S7, construct a transfer matrix T , calculate the theoretical interference signal , and based on the theoretical interference signal and the measured interference data correct the coupling error caused by multiple reflections between layers, and improve the inversion accuracy, including transfer matrix inversion and genetic algorithm optimization.

[0009] As a preferred embodiment, the method includes a reference mirror error compensation and a thickness optimization feedback mechanism. The reference mirror error compensation feedback mechanism is that the reference mirror error compensation matrix is transmitted to the thickness and three-dimensional profile calculation to eliminate the influence of system wavefront distortion on the topography. The thickness optimization feedback mechanism is that the thickness after the interlayer coupling compensation and optimization is fed back to the hierarchical thickness estimation module to dynamically correct the initial estimated hierarchical thickness.

[0010] As a preferred embodiment, in step S1, the cavity length is calibrated by measuring the maximum value of the reflected light intensity using a standard quartz cavity to determine the optimal working distance , , where z is the axial position of the sample, is the reflected light intensity received by the detector. The reference mirror error is calibrated by using a high-precision flat mirror to calibrate the wavefront distortion of the reference mirror, and a compensation matrix is generated by fitting the distorted phase with Zernike polynomials.

[0011] As a preferred embodiment, in step S4, the quantitative model of the phase difference with respect to the light intensity I is: , where is the background light intensity at position and wavelength , is the wavelength-dependent refractive index of the k-th layer, is the sample thickness.

[0012] As a preferred embodiment, in step S5, the weighted multi-step algorithm is expressed as: , ; where is the initial phase, is the contrast of each layer of sub-signals; and are the sampling weight functions of the cosine term and the sine term respectively, which can be designed based on the principle of inverse discrete Fourier transform, and their forms are: , , is the sampling weight function of the cosine term of the k-th layer, is the sampling weight function of the sine term of the k-th layer, is the general form of the window function, is the harmonic phase shift value in the case of multi-surface interference.

[0013] As a preferred embodiment, the thickness calculation in step S7 is as follows: taking the initial thickness output by step S6 as the starting point for the iterative algorithm, and using the non-linear least squares iterative algorithm to solve the exact thickness: , where is the measured data at the position point of the k-th layer, is the wavelength-dependent refractive index of the k-th layer, is the thickness of the k-th layer, starting the iteration with as the initial value, the initial thickness output by step S6 provides the theoretical thickness distribution of each layer, and step S7 restricts the phase-height mapping to the correct interval through the layer interface position, and the three-dimensional contour reconstruction is: , where is the three-dimensional contour map, is the change of the unwrapped phase of the k -th layer relative to the reference plane, is the experimental calibration coefficient, , is the refractive index of air, is the compensation matrix generated by fitting the distorted phase using Zernike polynomials.

[0014] As a preferred embodiment, the transmission matrix in step S8, where is the interface matrix of the k-th interface, is the Fresnel amplitude reflection coefficient, is the propagation matrix of the k-th layer, is the phase delay of the forward wave, is the phase delay of the backward wave, is the wavelength-dependent refractive index of the k-th layer, is the thickness of the k-th layer, is the total number of layers of the multi-layer film.

[0015] Extract the complex amplitude reflection coefficient of the sample from the described transfer matrix , , , where , and are the elements of the transfer matrix , represents the forward transfer coefficient represents the backward transfer coefficient

[0016] Calculate the theoretical interference signal from the described complex amplitude reflection coefficient , , where is the spectral density of the ultra-wideband light source is the amplitude reflection coefficient of the reference arm is the phase term of the reference arm, where is the physical path length of the reference arm is the phase delay is the complex amplitude reflection coefficient of the described sample is the phase term of the sample arm, where is the equivalent path length of the sample arm is the phase delay

[0017] As a preferred embodiment, the genetic algorithm is optimized to construct an objective function , and parameter updates are performed, iterating the thickness and the refractive index , where is the measured interference data is the theoretical interference signal

[0018] The measurement device and method of the present invention have the following beneficial effects Aiming at the limitation of the existing semiconductor multi-layer film measurement technology mainly based on single-point scanning measurement, the present invention provides a measurement device and method integrating an ultra-wideband synthetic light source and a planar array detection, aiming to achieve precise measurement of the hierarchical profile and thickness distribution of nano-scale semiconductor multi-layer films with high efficiency, high precision, and good stability BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The present invention will be further described in detail below in conjunction with the drawings and specific embodiments Att Figure 1 is a schematic diagram of the principle of the device system of the present invention

[0020] Att Figure 2 is a schematic diagram of the synthesis principle of the ultra-wideband synthetic light source of the present invention

[0021] Att Figure 3Schematic diagram of data recombination for the present invention.

[0022] Appendix Figure 4 Flow chart of the measurement method for the present invention.

[0023] Appendix Figure 1 In the figure: 1. Ultra-wideband synthetic light source; 2. Spatial filter; 3. Collimating lens; 4. Beam splitter; 5. Reference mirror; 6. Semiconductor multi-layer film under test; 7. Objective lens; 8. Imaging lens; 9. Area array spectrometer; 10. Computer processing unit. Specific implementation mode

[0024] The following will describe in detail the embodiments of the present invention with reference to the accompanying drawings: These embodiments are implemented on the premise of the technical solution of the present invention, and detailed implementation methods and specific operation processes are given, but the protection scope of the present invention is not limited to the following embodiments.

[0025] As Figure 1 , 2 shown, a measurement device for area array spectral domain interference of a semiconductor multi-layer film with an ultra-wideband synthetic light source includes an ultra-wideband synthetic light source 1, an interference system, an area array spectrometer 9, a semiconductor multi-layer film under test 6, a computer processing unit 10, etc.; the ultra-wideband synthetic light source 1 is a continuous spectrum generated by coupling multiple tunable lasers through a nonlinear optical fiber; the interference system includes a spatial filter 2, a collimating lens 3, a beam splitter 4, a reference mirror 5, an objective lens 7, an imaging lens 8, etc. The continuous spectrum generated by the ultra-wideband synthetic light source 1 passes through the spatial filter 2, the collimating lens 3, the beam splitter 4, and the reference mirror 5, and reaches the semiconductor multi-layer film under test 6. The light reflected back from the surface of the semiconductor multi-layer film under test 6 and the light reflected back from the surface of the reference mirror 5 form interference, and the interference signal is transmitted to the computer processing unit 10 through the area array spectrometer. Nonlinear effects are generated during the nonlinear optical fiber coupling process, and the nonlinear effects include self-phase modulation (SPM) or four-wave mixing (FWM).

[0026] As Figures 2 - 4 shown, a method for implementing a measurement device for area array spectral domain interference of a semiconductor multi-layer film with an ultra-wideband synthetic light source includes the following steps: Step S1: System calibration: including cavity length calibration and reference mirror error calibration; Step S2: Focusing and positioning: Ensure that the interference objective lens and the surface of the component under test are in the optimal imaging plane to maximize the interference fringe contrast; Step S3: Acquisition of area array spectral data: The ultra-wideband synthetic light source excites the multi-layer film reflection signal, and the area array spectrometer obtains the interference signal by single exposure , where Indicates the spatial coordinates of the sample, Indicates the wavelength;

[0027] Step S4: Data recombination: Extract signal data from the spectral domain interference signals collected by the obtained area array spectrometer where i = 1, 2...n, j = 1, 2...p, n and p are the pixel points in the horizontal and vertical directions of the area array spectrometer respectively; k = 1, 2...N, is the wavelength tuning range, extract the optical intensity signal data and perform recombination; the recombined signal data forms an optical intensity array where represents the k-th wavelength channel, establish a quantitative model of the phase difference versus the optical intensity I from the recombined signal data, and represent the spatial coordinates of the sample in the k-th wavelength channel k position array data; Step S5: Information separation: Design a sampling weight function and use a weighted multi-step algorithm to separate the multi-surface information of the measured part; Step S6: Layer thickness estimation: Based on the optical path difference, initially estimate the thickness of each layer, conduct threshold detection to locate the position of the reflection peak and perform initial thickness calculation: where is the position of the optical path difference peak of the k-th layer, is the reference refractive index of the material; Step S7: Thickness and three-dimensional contour calculation: Based on the optical intensity array data, using the initial thickness in Step S6 as the starting point for iterative optimization, perform thickness calculation. Based on the initial thickness in Step S6, provide the spatial distribution of the thickness of each layer, perform three-dimensional contour reconstruction, and output the thickness distribution and three-dimensional contour ; Step S8: Inter-layer coupling compensation and optimization: Based on the thickness and refractive index output in Step S7, construct a transfer matrix calculate the theoretical interference signal T , and based on the theoretical interference signal and the measured interference data correct the coupling error caused by multiple reflections between layers to improve the inversion accuracy, including transfer matrix inversion and genetic algorithm optimization. The method includes reference mirror error compensation and a thickness optimization feedback mechanism. The reference mirror error compensation feedback mechanism is the reference mirror error compensation matrix

[0028] ​Transferred to thickness and three-dimensional contour calculation to eliminate the influence of system wavefront distortion on topography. The thickness optimization feedback mechanism feeds back the interlayer coupling compensation and the optimized thickness to the layer thickness estimation module to dynamically correct the initial estimated layer thickness.

[0029] In step S1, the cavity length is calibrated by measuring the maximum reflected light intensity using a standard quartz cavity to determine the optimal working distance. , , where, z is the axial position of the sample, is the reflected light intensity received by the detector. The reference mirror error is calibrated by using a high-precision flat mirror to calibrate the wavefront distortion of the reference mirror, and a compensation matrix is generated by fitting the distorted phase with Zernike polynomials. .

[0030] In step S4, the quantitative model of the phase difference with respect to the light intensity I is: , where, is the position at the wavelength of the background light intensity, is the wavelength-dependent refractive index of the k-th layer, is the sample thickness.

[0031] In step S5, the weighted multi-step algorithm is expressed as: , ; where, is the initial phase, is the contrast of each layer sub-signal; and are the sampling weight functions of the cosine term and the sine term respectively, which can be designed based on the principle of inverse discrete Fourier transform, and their forms are: , , is the sampling weight function of the cosine term of the k-th layer, is the sampling weight function of the sine term of the k-th layer, is the general form of the window function, is the harmonic phase shift value in the case of multi-surface interference.

[0032] The thickness calculation in step S7 is: taking the initial thickness output in step S6 as the starting point for the iterative algorithm, and using the non-linear least squares iterative algorithm to solve the exact thickness: , where, is the measured data at the k-th layer position point , is the wavelength-dependent refractive index of the k-th layer, is the thickness of the k-th layer, starting iteration with as the initial value. The initial thickness output by step S6 provides the theoretical thickness distribution of each layer. Step S7 restricts the phase-height mapping to the correct interval through the layer interface position constraint. The three-dimensional profile reconstruction is as follows: , where is the three-dimensional profile map, is the k change in the unwrapped phase of the k-th layer relative to the reference plane, is the experimentally calibrated coefficient, , is the refractive index of air, is the compensation matrix generated by fitting the distorted phase using Zernike polynomials.

[0033] The transfer matrix in step S8, where is the interface matrix of the k-th interface, is the Fresnel amplitude reflection coefficient, is the propagation matrix of the k-th layer, is the phase delay of the forward wave, is the phase delay of the backward wave, is the wavelength-dependent refractive index of the k-th layer, is the thickness of the k-th layer, is the total number of layers of the multilayer film.

[0034] Extract the complex amplitude reflection coefficient of the sample from the transfer matrix , , where , and are the elements of the transfer matrix , represents the forward transmission coefficient, represents the backward transmission coefficient.

[0035] Calculate the theoretical interference signal from the complex amplitude reflection coefficient , , where is the spectral density of the ultra-wideband light source, is the amplitude reflection coefficient of the reference arm, phase term of the reference arm, where is the physical path length of the reference arm, is the phase delay, is the complex amplitude reflection coefficient of the sample, phase term of the sample arm, where is the equivalent path length of the sample arm, is the phase delay.

[0036] The genetic algorithm is optimized to construct an objective function: , and perform parameter updates, iterating the thickness and the refractive index , where, is the measured interference data, is the theoretical interference signal.

[0037] The foregoing has shown and described the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited by the above embodiments, and what is described in the above embodiments and the specification is only to illustrate the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention will also have various changes and improvements, and these changes and improvements fall within the scope of the present invention claimed. The scope of the present invention claimed is defined by the appended claims and their equivalents.

Claims

1. A planar array spectral domain interference semiconductor multilayer film measuring device for an ultra-wideband synthetic light source, characterized in that, It includes an ultra-wideband synthetic light source, an interference system, a planar array spectrometer, a semiconductor multilayer film under test, and a computer processing unit; the ultra-wideband synthetic light source is a continuous spectrum generated by coupling multiple tunable lasers through a nonlinear optical fiber. During the nonlinear optical fiber coupling process, a nonlinear effect is generated, and the nonlinear effect includes self-phase modulation or four-wave mixing; the interference system includes a spatial filter, a collimating lens, a beam splitter, a reference mirror, an objective lens, and an imaging lens.

2. The planar array spectral domain interference semiconductor multilayer film measuring device for an ultra-wideband synthetic light source according to claim 1, wherein The continuous spectrum generated by the ultra-wideband synthetic light source passes through the spatial filter, the collimating lens, the beam splitter, and the reference mirror, and reaches the semiconductor multilayer film under test. The light reflected back from the surface of the semiconductor multilayer film under test and the light reflected back from the surface of the reference mirror form interference. The interference signal is transmitted to the computer processing unit through the planar array spectrometer.

3. A method for implementing a planar array spectral domain interference semiconductor multilayer film measuring device for an ultra-wideband synthetic light source as described in claim 1, characterized in that, It includes the following steps: Step S1: System calibration: including cavity length calibration and reference mirror error calibration; Step S2: Focusing and positioning: Ensure that the interference objective lens and the surface of the component under test are in the optimal imaging plane to maximize the interference fringe contrast; Step S3: Area array spectral data acquisition: The multi-layer film reflection signal is excited by an ultra-wideband synthetic light source, and the interferometric signal is obtained by a single exposure of the area array spectrometer , where represents the spatial coordinates of the sample, represents the wavelength; Step S4: Data Reorganization: Extract signal data from the spectral domain interference signals collected by the obtained area array spectrometer where i = 1, 2... n, j = 1, 2... p, and n and p are the pixel points in the horizontal and vertical directions of the area array spectrometer respectively; k = 1, 2... N, is the wavelength tuning range, and extract the optical intensity signal data for reorganization; the reorganized signal data forms an optical intensity array where represents the k-th wavelength channel, and a quantitative model of the phase difference versus the optical intensity I is established from the reorganized signal data, representing the spatial coordinates of the samples in the k-th wavelength channel k position array data; ​ Step S5: Information separation: Design the sampling weight function and use the weighted multi-step algorithm to separate the multi-surface information of the component under test; Step S6: Estimation of layer thickness: Based on the optical path difference, initially estimate the thickness of each layer, and conduct threshold detection to locate the position of the reflection peak , and perform initial thickness calculation: , where is the peak position of the optical path difference of the k-th layer, is the reference refractive index of the material; Step S7: Thickness and 3D contour calculation: Based on the light intensity array data, starting from the initial thickness in step S6 as the starting point for iterative optimization, perform thickness calculation. Based on the initial thickness in step S6, provide the spatial distribution of the thickness of each layer, perform 3D contour reconstruction, and output the thickness distribution and the 3D contour ; Step S8: Interlayer coupling compensation and optimization: Based on the thickness output in Step S7 and refractive index Construct a transfer matrix T and calculate the theoretical interference signal Based on the theoretical interference signal and the measured interference data Correct the coupling error caused by multiple reflections between layers, improve the inversion accuracy, including transfer matrix inversion and genetic algorithm optimization.

4. The implementation method of a planar array spectral domain interference semiconductor multilayer film measuring device for an ultra-wideband synthetic light source according to claim 3, characterized in that, The method includes reference mirror error compensation and a thickness optimization feedback mechanism. The reference mirror error compensation feedback mechanism is a reference mirror error compensation matrix transmitted to thickness and three-dimensional profile calculation to eliminate the influence of system wavefront distortion on topography. The thickness optimization feedback mechanism is that the interlayer coupling compensation and the optimized thickness are transmitted back to the layer thickness estimation module to dynamically correct the initially estimated layer thickness.

5. The implementation method of a planar array spectral domain interference semiconductor multilayer film measuring device for an ultra-wideband synthetic light source according to claim 3, characterized in that, In the step S1, the cavity length is calibrated by measuring the maximum value of the reflected light intensity using a standard quartz cavity to determine the optimal working distance. , , where z is the axial position of the sample, is the intensity of the reflected light received by the detector. The reference mirror error is calibrated by calibrating the wavefront distortion of the reference mirror using a high-precision flat mirror, and a compensation matrix is generated by fitting the distorted phase using Zernike polynomials. .

6. The implementation method of a planar array spectral domain interference semiconductor multilayer film measuring device for an ultra-wideband synthetic light source according to claim 3, characterized in that The quantitative model of the phase difference with respect to the light intensity I established in step S4 is as follows: , where is the position at which, and the wavelength is the background light intensity at the wavelength, is the wavelength-dependent refractive index of the k-th layer, is the sample thickness.

7. The implementation method of a planar array spectral domain interference semiconductor multilayer film measuring device for an ultra-wideband synthetic light source according to claim 3, characterized in that, The weighted multi-step algorithm used in the step S5 is expressed as: ， ； Among them, is the initial phase, is the contrast of each layer of sub-signals; and are the sampling weight functions of the cosine term and the sine term respectively, which can be designed based on the principle of inverse discrete Fourier transform, and their forms are: , , is the sampling weight function of the cosine term of the k-th layer, is the sampling weight function of the sine term of the k-th layer, is the general form of the window function, is the harmonic phase shift value in the case of multi-surface interference.

8. The implementation method of a planar array spectral domain interference semiconductor multilayer film measuring device for an ultra-wideband synthetic light source according to claim 5, characterized in that, The thickness calculation in step S7 is as follows: taking the initial thickness output in step S6 as the starting point for the iterative algorithm, and using the non - linear least - squares iterative algorithm to solve for the accurate thickness: , where is the measured data at the position point of the k - th layer , is the wavelength - dependent refractive index of the k - th layer, is the thickness of the k - th layer. Starting the iteration with as the initial value, the initial thickness output in step S6 provides the theoretical thickness distribution of each layer. In step S7, through the layer - interface position constraint, the phase - height mapping is limited to the correct interval. The three - dimensional profile reconstruction is: , where is the three - dimensional profile map, is the change in the unwrapped phase of the k -th layer relative to the reference plane, is the experimental calibration coefficient, , is the refractive index of air, is the compensation matrix generated by fitting the distorted phase using Zernike polynomials.

9. The implementation method of a planar array spectral domain interference semiconductor multilayer film measuring device for an ultra-wideband synthetic light source according to claim 3, characterized in that, The transfer matrix in the step S8 , where is the interface matrix of the k-th interface, is the Fresnel amplitude reflection coefficient, is the propagation matrix of the k-th layer, is the phase delay of the forward wave, is the phase delay of the backward wave, is the wavelength-dependent refractive index of the k-th layer, is the thickness of the k-th layer, is the total number of layers of the multilayer film; the complex amplitude reflection coefficient of the sample is extracted from the transfer matrix , , where , and are the elements of the transfer matrix , represents the forward transfer coefficient, represents the backward transfer coefficient. From the complex amplitude reflection coefficient , the theoretical interference signal is calculated, , where is the spectral density of the ultra-wideband light source, is the amplitude reflection coefficient of the reference arm, is the phase term of the reference arm. Where is the physical path length of the reference arm, is the phase delay, is the complex amplitude reflection coefficient of the sample, is the phase term of the sample arm. Where is the equivalent path length of the sample arm, is the phase delay.​ 10. The implementation method of a planar array spectral domain interference semiconductor multilayer film measuring device for an ultra-wideband synthetic light source according to claim 3, characterized in that, The genetic algorithm is optimized to construct an objective function: , and parameter updates are performed, iterating the thickness and the refractive index , where is the measured interference data, is the theoretical interference signal.

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