Ion beam etching device and parameter analysis method

Abstract

The invention discloses an ion beam etching device and a parameter analysis method, and relates to the technical field of semiconductors, the ion beam etching device comprises a film forming vacuum chamber, an etching ion source, a sample loading device, an electric field generating device and a magnetic field generating device; the film-forming vacuum chamber provides a stable vacuum environment, the etching ion source generates a high-energy ion beam, and the sample loading device is located at the position under the emitting end of the etching ion source to guarantee vertical incidence of the ion beam; the magnetic field generating device and the electric field generating device work cooperatively, the movement track of ions is regulated and controlled by adjusting the field intensity and direction, the ion beam distribution is optimized, the ions can act on the surface of a sample more accurately, and the etching uniformity and the etching efficiency are effectively improved.

Description

Technical Field

[0001] This application relates to the field of semiconductors, and particularly to an ion beam etching device and a parameter analysis method. Background Art

[0002] Plasma etching technology is a key process in integrated circuit manufacturing, directly affecting product quality and the advancement of production technology. Ion beam etching has the characteristics of high precision, high directionality, and wide material adaptability. Related technologies, such as using focused ion beam etching technology to repair surface defects such as etching pits generated by inductively coupled plasma surface micromachining, have problems of uneven beam current of the ion beam itself and damage to surface uniformity caused by scattering of impurity gas molecules.

[0003] In related technologies, ion beam etching is based on a physical bombardment process, making it difficult to achieve deep etching of wafers. When the process parameters are not well controlled, over-etching is likely to occur. At the same time, the energy distribution of the ion beam is uneven, and the focusing and collimation effects are poor, resulting in difficulty in precisely controlling the planar uniformity. Summary of the Invention

[0004] This application provides an ion beam etching device and a parameter analysis method to at least solve the problems of low etching efficiency and poor uniformity in related technologies.

[0005] This application provides an ion beam etching device, including:

[0006] A film-forming vacuum chamber, an etching ion source, a specimen carrier device, an electric field generating device, and a magnetic field generating device;

[0007] The etching ion source is fixedly arranged inside the film-forming vacuum chamber, and the etching ion source is used to generate an etching ion beam under vacuum conditions;

[0008] The specimen carrier device is fixedly arranged inside the film-forming vacuum chamber, at a position directly below the emission end of the etching ion source;

[0009] The electric field generating device is fixed to the bottom of the specimen carrier device, and the electric field generating device is used to generate an electric field to apply an electric force to the ion beam to change the ion movement direction;

[0010] The magnetic field generating device is sleeved outside the film-forming vacuum chamber, and the magnetic field generating device is used to cooperate with the electric field generating device to change the movement direction and trajectory of the ions; the central height of the magnetic field generating device is at the same horizontal height as the specimen carrier device or lower than the horizontal height of the specimen carrier device.

[0011] This application also provides an ion beam etching parameter analysis method for parameter adjustment of the above ion beam etching device, including:

[0012] Obtain environmental parameters and physical parameters. The environmental parameters include vacuum chamber parameters, background gas parameters, and sample parameters; the physical parameters include electric field parameters, magnetic field parameters, and current form.

[0013] Analyze the environmental parameters and physical parameters to obtain the physical field distribution.

[0014] Based on the physical field distribution and background gas parameters, perform ion motion simulation to obtain the spatial motion trajectory of ions.

[0015] Analyze the spatial potential difference and the spatial current formed by ions per unit area per unit time through the spatial motion trajectory and sample parameters.

[0016] Compare the spatial current and the spatial potential difference with their corresponding preset current thresholds and preset potential difference thresholds respectively. When the spatial current is less than the preset current threshold and / or the spatial potential difference is greater than the preset potential difference threshold, adjust the physical parameters and return to the step of analyzing the environmental parameters and physical parameters to obtain the physical field distribution until the spatial current is greater than or equal to the preset current threshold and the spatial potential difference is less than the preset potential difference threshold, and obtain the target physical parameters.

[0017] This application also provides an ion beam etching parameter analysis device, including:

[0018] An acquisition module for obtaining environmental parameters and physical parameters. The environmental parameters include vacuum chamber parameters, background gas parameters, and sample parameters; the physical parameters include electric field parameters, magnetic field parameters, and current form.

[0019] A physical field analysis module for analyzing the environmental parameters and physical parameters to obtain the physical field distribution.

[0020] A simulation module for performing ion motion simulation based on the physical field distribution and background gas parameters to obtain the spatial motion trajectory of ions.

[0021] A sample analysis module for analyzing the spatial potential difference and the spatial current formed by ions per unit area per unit time through the spatial motion trajectory and sample parameters.

[0022] An adjustment module for comparing the spatial current and the spatial potential difference with their corresponding preset current thresholds and preset potential difference thresholds respectively. When the spatial current is less than the preset current threshold and / or the spatial potential difference is greater than the preset potential difference threshold, adjust the physical parameters and return to the step of analyzing the environmental parameters and physical parameters to obtain the physical field distribution until the spatial current is greater than or equal to the preset current threshold and the spatial potential difference is less than the preset potential difference threshold, and obtain the target physical parameters.

[0023] The present application also provides an electronic device, including: a memory for storing a computer program; and a processor for implementing the steps of any of the above ion beam etching parameter analysis methods when executing the computer program.

[0024] The present application also provides a computer-readable storage medium storing a computer program, wherein the computer program implements the steps of any of the above ion beam etching parameter analysis methods when executed by a processor.

[0025] The present application also provides a computer program product including a computer program, which implements the steps of any of the above ion beam etching parameter analysis methods when executed by a processor.

[0026] Through the present application, since the electric field generated by the electric field generating device can apply an electric field force to the ion beam, directly changing the ion movement direction and enabling the ions to act on the sample surface more precisely; at the same time, the magnetic field generating device works in cooperation with the electric field generating device to further regulate the ion movement trajectory and optimize the distribution of the ion beam on the sample surface. In addition, the ion beam etching parameter analysis method analyzes the physical field distribution by obtaining environmental parameters and physical parameters, simulates the ion movement based on this, and dynamically adjusts physical parameters such as the electric field and magnetic field according to the spatial potential difference and the spatial current formed by ions per unit area per unit time, ensuring the efficiency of the ion beam acting on the sample. Therefore, the technical problems of low ion beam etching efficiency and poor uniformity can be solved, achieving the technical effects of improving the etching efficiency, controlling the etching uniformity within a higher precision range, and increasing the etching rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] To more clearly illustrate the embodiments of the present application, the following will briefly introduce the drawings required in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application, and those of ordinary skill in the art can obtain other drawings based on these drawings without creative efforts.

[0028] Figure 1 It is a schematic structural diagram of the ion beam etching device provided by the embodiment of the present application;

[0029] Figure 2 It is a schematic structural diagram of the insulation protection structure provided by the embodiment of the present application;

[0030] Figure 3 It is a schematic flowchart of the ion beam etching parameter analysis method provided by the embodiment of the present application;

[0031] Figure 4 It is a schematic structural diagram of the ion beam etching parameter analysis device theme provided by the embodiment of the present application;

[0032] Figure 5 The structural schematic diagram of the electronic device provided by the embodiment of the present application.

[0033] Among them, the above-mentioned drawings include the following reference numerals:

[0034] 101 - Film-forming vacuum chamber; 102 - Etching ion source; 103 - Specimen loading device; 104 - Electric field generating device; 105 - Magnetic field generating device; 106 - Insulation protection structure;

[0035] 1031 - Central axis;

[0036] 1051 - Electromagnetic coil; 1052 - Support cylinder; 1053 - Fixed seat;

[0037] 1061 - Insulating gasket; 1062 - Insulating housing. Detailed implementation manners

[0038] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without making creative efforts belong to the protection scope of the present application.

[0039] It should be noted that in the description of the present application, the terms "include", "comprise" or any other variant thereof are intended to cover a non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or further includes elements inherent to such process, method, article or device. The terms "first", "second", etc. in the present application are used to distinguish similar objects, rather than to describe a specific order or sequence.

[0040] The terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. They are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present application. The terms "mounted", "connected", "connected to" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements. The terms "parallel", "perpendicular", "equal" include the described situations and situations similar to the described situations, and the range of the similar situations is within the acceptable deviation range, where the acceptable deviation range is determined by those of ordinary skill in the art considering the measurements being discussed and the errors associated with the measurements of specific quantities (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallel and approximate parallel, and the acceptable deviation range of approximate parallel can be, for example, within 5° deviation; "perpendicular" includes absolute perpendicular and approximate perpendicular, and the acceptable deviation range of approximate perpendicular can also be, for example, within 5° deviation. "Equal" includes absolute equality and approximate equality, and the acceptable deviation range of approximate equality can be, for example, that the difference between the two equal ones is less than or equal to 5% of any one of them. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific situations.

[0041] The object of the present application is to solve the technical problems of low ion beam etching efficiency and poor uniformity, and a kind of ion beam etching device and parameter analysis method are proposed. The ion beam etching device provides an etching environment through a film-forming vacuum chamber, an etching ion source generates an ion beam, an electric field generating device and a sample loading device are combined to change the ion movement direction, and a magnetic field generating device is sleeved outside the vacuum chamber and cooperates with the electric field to further regulate the ion movement trajectory, improving the etching uniformity and etching efficiency. The ion beam etching parameter analysis method obtains environmental and physical parameters, calculates the physical field distribution through analysis, then simulates the ion movement trajectory, and finally analyzes the space current and potential difference based on the trajectory and sample parameters, and compares them with the preset threshold values to dynamically adjust the physical parameters, ultimately achieving the improvement of the ion beam etching efficiency and uniformity.

[0042] In order to enable those skilled in the art of the present technology to better understand the solution of the present application, the present application will be further described in detail below with reference to the drawings and specific embodiments.

[0043] Figure 1 Schematic cross-sectional structure diagram of the ion beam etching device provided by the embodiment of the present application; as Figure 1 shown, the present embodiment provides an ion beam etching device, including: a film-forming vacuum chamber 101, an etching ion source 102, a specimen loading device 103, an electric field generating device 104, and a magnetic field generating device 105;

[0044] The etching ion source 102 is fixedly arranged inside the film-forming vacuum chamber 101, and the etching ion source 102 is used to generate an etching ion beam under vacuum conditions;

[0045] The specimen loading device 103 is fixedly arranged inside the film-forming vacuum chamber 101, at a position directly below the emission end of the etching ion source 102;

[0046] The electric field generating device 104 is fixed to the bottom of the specimen loading device 103, and the electric field generating device 104 is used to generate an electric field to apply an electric field force to the ion beam to change the ion movement direction;

[0047] The magnetic field generating device 105 is sleeved outside the film-forming vacuum chamber 101, and the magnetic field generating device 105 is used to cooperate with the electric field generating device 104 to change the ion movement direction and trajectory; the center height of the magnetic field generating device 105 is at the same horizontal height as the specimen loading device 103 or lower than the horizontal height of the specimen loading device 103.

[0048] Specifically, the film-forming vacuum chamber 101 is used to provide a high-vacuum environment (such as 0.01 Pa), reduce the collision probability of ions with gas molecules through the vacuum environment, reduce the scattering of gas molecules to the ion beam, improve the ion beam energy utilization rate and etching directionality, and ensure the accuracy of the etching process.

[0049] The etching ion source 102 can generate a high-energy ion beam (such as Ar+), which is used to bombard the sample surface to achieve material removal. The higher the acceleration voltage, the greater the kinetic energy obtained by the ions, and the corresponding etching rate is increased. The etching ion source 102 can be fixed to the top plate of the film-forming vacuum chamber 101 through an existing hoisting structure, and its ion emission end faces the specimen loading device 103 below. It can also be fixed to the side plate of the film-forming vacuum chamber 101 through existing forms such as brackets, which are not specifically limited here and can be adjusted according to actual needs.

[0050] The specimen loading device 103 is used to carry the sample to be etched.

[0051] The electric field generating device 104 can generate a direct current or pulsed electric field, and change the ion movement trajectory through the electric field force. The pulsed electric field can be adjusted by the duty cycle and frequency to achieve dynamic ion trajectory control.

[0052] The magnetic field generating device 105 controls the ion movement through the cooperation of generating a controllable magnetic field and the electric field.

[0053] The ion source emits an ion beam vertically downward, and the sample carrier device 103 is located directly below to ensure that the ion beam is incident vertically; the electric field device is integrated with the sample carrier device 103, and the magnetic field device surrounds the vacuum chamber to form an orthogonal electromagnetic field configuration; the electric field can accelerate the ion energy, and the magnetic field can increase the plasma density, effectively improving the etching power; moreover, the electric field can correct the ion angle, and the magnetic field can constrain the spiral trajectory, and the combined action of the electric field and the magnetic field improves the etching uniformity.

[0054] The central height of the magnetic field generating device 105 being at the same horizontal height as the sample carrier device 103 or lower than the horizontal height of the sample carrier device 103 can effectively avoid the magnetic field interference problem that may occur when the magnetic field generating device 105 is higher than the sample carrier device 103, prevent the ion beam from being disordered before reaching the sample due to uneven magnetic field line distribution, reduce phenomena such as ion beam deviation and divergence, ensure that the ion beam can act on the sample surface along the expected path, and improve the etching accuracy.

[0055] An ion beam etching device provided by an embodiment of the present application provides a stable vacuum environment through the film-forming vacuum chamber 101, the etching ion source 102 generates a high-energy ion beam, and the sample carrier device 103 ensures that the ion beam is incident vertically; the electric field generating device 104 and the magnetic field generating device 105 work together to optimize the ion beam distribution by adjusting the field strength and direction, effectively improving the etching efficiency and etching uniformity.

[0056] In some alternative embodiments, the sample carrier device 103 is disc-shaped, a central shaft 1031 is fixed at the bottom of the film-forming vacuum chamber 101, and the sample carrier device 103 is rotationally connected to the film-forming vacuum chamber 101 through the central shaft 1031.

[0057] Specifically, during the etching process, the central shaft 1031 can be rotated by a driving component such as a motor, so that the disc-shaped sample carrier device 103 performs a circular motion around the central shaft 1031. The ion beam is incident vertically downward. As the sample carrier device 103 rotates, each point on the sample surface sequentially passes through the ion beam bombardment area, and uniform coverage of the ion beam on the sample surface is achieved by using the principle of relative motion.

[0058] The rotatable sample carrier device 103 can enable the sample surface to receive more uniform bombardment during the ion beam etching process, avoiding problems such as local over-etching or under-etching caused by uneven distribution of the ion beam itself; the etching depth can be flexibly controlled by controlling the rotation speed and adjusting the action time of the ion beam on the sample surface; the disc-shaped structure can make full use of the internal space of the vacuum chamber, adapt to circular samples of different sizes, and ensure the stability and balance of the sample during rotation.

[0059] The sample carrier device 103 is rotatably connected to the film-forming vacuum chamber 101 through the central axis 1031. Compared with the traditional fixed loading method, it can significantly improve the etching uniformity and achieve higher etching accuracy; by adjusting the rotation speed, precise control of the etching process can be realized, the controllability of the etching process can be improved, and various etching requirements can be met; the disc shape can adapt to various circular samples, expanding the application range of the device. At the same time, the stable rotational connection reduces the etching error caused by sample shaking, effectively improving the etching yield and etching uniformity.

[0060] In some alternative embodiments, as Figure 2 shown, it further includes an insulation protection structure 106. The insulation protection structure 106 includes an insulation gasket 1061 and an insulation housing 1062. The insulation gasket 1061 is arranged between the electric field generating device 104 and the sample carrier device 103; the insulation housing 1062 is U-shaped, and the electric field generating device 104 is arranged in the U-shaped groove of the insulation housing 1062. The top end of the insulation housing 1062 is hermetically fixed to the insulation gasket 1061 to form a wrapping structure.

[0061] Specifically, the insulation gasket 1061 is arranged between the electric field generating device 104 and the sample carrier device 103 to form a planar insulation isolation layer; the insulation gasket 1061 can be made of, for example, polytetrafluoroethylene (PTFE), mica sheet or ceramic gasket according to actual needs, and no specific limitation is made here. The insulation gasket 1061 can be fixed to the electric field generating device 104 and the sample carrier device 103 through insulation bolts or bonding.

[0062] The insulation housing 1062 is in the shape of a U-shaped groove with an upward opening, wrapping the side and bottom of the electric field generating device 104, and the top end is hermetically connected to the insulation gasket 1061. The top end of the insulation housing 1062 and the insulation gasket 1061 can be vacuum-sealed through a fluororubber sealing ring or a metal vacuum seal weld (such as electron beam welding). The insulation housing 1062 can be made of, for example, engineering plastics (such as PEEK, Polyetheretherketone) or epoxy resin composite materials according to actual needs.

[0063] The insulation protection structure 106 isolates the electric field generating device 104 from the sample carrier device 103, preventing the leakage of high-voltage electric fields to the loading platform and avoiding equipment short-circuit faults. It can also block the secondary electron generated during the ion beam etching process from flowing back to the electric field power supply, protecting the power supply from transient current impact. The low dielectric constant of the insulating material (for example, the dielectric constant ε of PTFE is approximately 2.1) reduces the electric field distortion, ensures that the electric field force acts uniformly on the ion beam, and avoids the deviation of the ion trajectory caused by electric field leakage, improving the etching uniformity.

[0064] In some alternative embodiments, the magnetic field generating device 105 includes: an electromagnetic coil 1051, a support cylinder 1052, and a fixing base 1053;

[0065] The support cylinder 1052 has a hollow structure and is sleeved outside the film-forming vacuum chamber 101; the electromagnetic coil 1051 is a hollow circular coil wound in parallel and is arranged outside the support cylinder 1052; a fixing base 1053 is arranged below the support cylinder 1052, and the electromagnetic coil 1051 is fixedly arranged outside the vacuum chamber through the support cylinder 1052 and the fixing base 1053.

[0066] Specifically, when an electric current passes through the circular electromagnetic coil 1051 wound in parallel, a magnetic field will be generated in the surrounding space; by adjusting the coil current, the magnetic field strength can be changed, and further the magnitude of the Lorentz force exerted on the ion beam in the magnetic field can be regulated to realize the control of the ion movement trajectory.

[0067] The film-forming vacuum chamber 101 has a cylindrical structure. The diameter of the support cylinder 1052 is larger than the diameter of the film-forming vacuum chamber 101, and it is concentrically arranged with the film-forming vacuum chamber 101 and sleeved outside the film-forming vacuum chamber 101, which is used to fix the position of the electromagnetic coil 1051 and ensure that the electromagnetic coil 1051 will not be deformed or displaced due to the electromagnetic force under a high magnetic field strength; at the same time, the hollow support cylinder 1052 helps the electromagnetic coil 1051 to dissipate heat, extends the service life of the electromagnetic coil 1051, and ensures the stable operation of the magnetic field generating device 105.

[0068] The support cylinder 1052 and the fixing base 1053 can be fixed by bolts, or can be fixed by welding or other means. The fixing base 1053 ensures that the support cylinder 1052 and the electromagnetic coil 1051 are firmly installed outside the vacuum chamber, ensuring that the magnetic field generating device 105 will not be displaced due to factors such as vibration during operation, and ensuring the stability and consistency of the magnetic field distribution. The height of the fixing base 1053 can be adjusted according to requirements.

[0069] In some alternative embodiments, the wire diameter of the electromagnetic coil 1051 is 0.5 mm to 2 mm, the winding density is 10 to 50 turns / cm; the height of the support cylinder 1052 is 50 mm to 100 mm, and the current range of the electromagnetic coil 1051 is 0 to 20 A.

[0070] Specifically, the wire diameter can affect the current-carrying capacity and heat generation efficiency. The thicker the wire diameter, the smaller the resistance, and a larger current (matching the range of 0 - 20A) can be passed through to avoid overheating due to overload. A relatively thick wire diameter (such as 2mm) is suitable for high-current (20A) working conditions, reducing the temperature rise of the coil and ensuring stable operation for a long time; a relatively thin wire diameter (such as 0.5mm) can increase the winding density and generate sufficient magnetic field strength even under small currents, taking into account flexibility. By limiting the wire diameter range, the magnetic field strength and heat dissipation requirements can be effectively balanced, avoiding excessive resistance and serious heating caused by too thin a wire diameter, or insufficient winding density and limited magnetic field strength caused by too thick a wire diameter.

[0071] The magnetic field strength is proportional to the number of coil turns. The higher the winding density, the more turns per unit length, and the stronger the magnetic field strength. High winding density combined with high current can generate a strong magnetic field; low winding density combined with small current is suitable for low-intensity magnetic field requirements, reducing energy loss. The wide range of winding density enables the magnetic field strength to be adjusted within a large range to meet the needs of different etching materials and processes. For example, when etching silicon wafers and metal films, different ion beam control precisions can be achieved by adjusting the winding density and current.

[0072] By adjusting the current, the magnetic field strength can be dynamically controlled to achieve precise regulation of the ion beam trajectory. When the current is 0A, there is no magnetic field, which is suitable for etching processes that do not require magnetic field assistance; when the current is 20A, a strong magnetic field can be generated, effectively controlling the deflection angle of the ion beam and improving the etching line width accuracy. The wide current adjustment range enables the device to have flexible adaptation capabilities and be compatible with etching scenarios with different precision requirements. For example, high-precision etching requires a 20A strong magnetic field to ensure the uniformity of nanoscale lines, while conventional micro-structure etching can meet the etching requirements with 5 - 10A.

[0073] The diameter of the support cylinder 1052 is larger than the diameter of the film-forming vacuum chamber 101, and it is coaxially sleeved outside the film-forming vacuum with the same center as the film-forming vacuum chamber 101. The height of the support cylinder 1052 directly determines the axial winding length of the electromagnetic coil 1051: the higher the height, the wider the magnetic field action range. In the entire path of the ion beam emitted from the etching ion source 102 to the specimen loading device 103, the ion beam will be affected by the magnetic field earlier and over a larger area, facilitating the adjustment of the deflection angle and focusing effect of the ion beam in a larger space. A lower height will make the magnetic field action range more concentrated, and the ion beam will be significantly affected by the magnetic field only when approaching the specimen, which is suitable for scenarios where local strong magnetic field is required to control the ion beam trajectory. The height can be adjusted according to specific requirements.

[0074] In some alternative embodiments, the electric field generating device 104 is a regulated power supply, and the current form is direct current or pulsed current.

[0075] Specifically, a regulated power supply converts the input power supply (such as alternating current) into direct current with a constant voltage through filtering and feedback control (such as PID regulation). The electric field generated by the direct current is a static electric field. During the film formation or etching process, the constant electric field exerts a continuous force on the charged ions, causing them to move along a fixed trajectory (such as perpendicular incidence onto the specimen surface), ensuring the directionality of deposition / etching; eliminating the static charges accumulated on the specimen surface and avoiding uneven film deposition caused by charge repulsion. The static electric field has high stability and can operate continuously for a long time.

[0076] The regulated power supply generates a periodic pulsed current through pulse width modulation. The pulsed current generates an alternating electric field, and the electric field intensity changes periodically with time; the ions are instantaneously accelerated / decelerated by the pulsed electric field, and the pulsed deposition can be achieved by controlling the time interval for the ions to reach the specimen surface; the intermittent working mode of the pulsed electric field (such as a duty cycle of 50%) can reduce the temperature rise on the specimen surface and avoid material phase transformation caused by high temperature.

[0077] In some alternative embodiments, when the current form is direct current, the DC voltage amplitude is 0 to -50V, when the current form is pulsed current, the pulsed voltage amplitude is 0 to -200V, the voltage duty cycle is 0 to 60%, and the frequency is 0 to 30000Hz.

[0078] Specifically, the DC voltage generates a constant electric field through the regulated power supply. The electric field intensity is proportional to the voltage amplitude. When the voltage is negative (the specimen end is grounded), the electric field direction is from the specimen to the electric field generating device 104, forming an accelerating electric field pointing to the specimen. The voltage polarity (negative) determines the electric field direction. The negative voltage accelerates the positively charged ions (such as Ar⁺) towards the specimen, and the negatively charged particles (such as electrons) are repelled, realizing ion beam screening.

[0079] The instantaneous electric field intensity of the pulsed current can reach 4 times that of the DC mode. For example, when the plate distance is 10mm, the electric field intensity is 0 to 20V / mm, but the average electric field intensity is modulated by the duty cycle: Eavg = Emax × duty cycle; the duty cycle controls the duration of the high voltage action per unit time. For example, a 60% duty cycle (10kHz frequency) means that -200V is applied for 60μs and 0V for 40μs in every 100μs. The frequency determines the pulse period (33μs to ∞), affecting the ion beam pulse interval.

[0080] By the coordinated adjustment of the voltage amplitude, duty cycle, and frequency, the control accuracy of the interaction between ions and materials can be effectively improved, and the damage deposition can be reduced.

[0081] Figure 3 This is a schematic flow diagram of the ion beam etching parameter analysis method provided by the embodiments of this application, such as Figure 3As shown in the figure, an embodiment of the present application provides an ion beam etching parameter analysis method for adjusting the parameters of the above-mentioned ion beam etching device. The method is described in detail as follows:

[0082] S301: Obtain environmental parameters and physical parameters. The environmental parameters include vacuum chamber parameters, background gas parameters, and sample parameters; the physical parameters include electric field parameters, magnetic field parameters, and current form.

[0083] Specifically, a vacuum gauge (such as a Pirani gauge), a gas mass flow meter, a spectroscopic ellipsometer and other devices are used to collect the vacuum degree (at the level of 0.01 Pa), the background gas composition (such as the Ar gas flow rate), and the sample material parameters (such as resistivity) in real time, and at the same time, physical parameters such as the voltage and current of the electric field / magnetic field power supply are read. This provides a data basis for subsequent analysis.

[0084] S302: Analyze the environmental parameters and physical parameters to obtain the physical field distribution.

[0085] Specifically, the finite element method is used to generate electromagnetic field distribution training data, and the residual connection neural network is used to learn the normalized parameters to establish a non-linear mapping model from parameters to field distribution, so as to achieve rapid prediction. By quantifying the field strength change on the ion beam path, the ion trajectory accuracy is guaranteed, and the physical field calculation efficiency and accuracy are improved.

[0086] S303: Based on the physical field distribution and the background gas parameters, perform ion motion simulation to obtain the spatial motion trajectory of the ions.

[0087] Specifically, the trajectory change law of the ion beam during transmission is obtained through simulation analysis, and while ensuring physical authenticity, the calculation complexity is significantly reduced, and high-precision trajectory prediction is achieved, providing a basis for the analysis of etching uniformity.

[0088] S304: Analyze the spatial potential difference and the spatial current formed by ions per unit area per unit time through the spatial motion trajectory and the sample parameters.

[0089] Specifically, by calculating the spatial potential difference on the sample surface and the current density distribution per unit area per unit time, the etching rate and the charge accumulation effect are quantified, and the etching uniformity and etching efficiency are reflected.

[0090] S305: Compare the spatial current and the spatial potential difference with their corresponding preset current thresholds and preset potential difference thresholds respectively. When the spatial current is less than the preset current threshold and / or the spatial potential difference is greater than the preset potential difference threshold, adjust the physical parameters and return to the step of analyzing the environmental parameters and physical parameters to obtain the physical field distribution until the spatial current is greater than or equal to the preset current threshold and the spatial potential difference is less than the preset potential difference threshold, and the target physical parameters are obtained.

[0091] Specifically, by setting a threshold value to continuously iterate and optimize the parameters, dynamically adjust the physical parameters, and repeat the simulation process, it quickly converges to the optimal parameter combination to ensure that the obtained target physical parameters meet the requirements of etching efficiency and uniformity.

[0092] Definition of the above residual connection neural network: The residual connection neural network is a deep neural network architecture that solves the problem of gradient vanishing / explosion in the training of traditional deep networks by introducing residual blocks, enabling the network to be trained deeper, thereby enhancing the model's expressive ability.

[0093] The ion beam etching parameter analysis method provided in this embodiment ensures the comprehensiveness and accuracy of the analysis through the processes of parameter acquisition, physical field modeling, trajectory simulation, index quantification, and optimization, effectively improving the etching uniformity and etching efficiency, reducing the dependence on manual experience, and lowering the trial-and-error cost.

[0094] This embodiment details the process of analyzing the environmental parameters and physical parameters in the above embodiment to obtain the physical field distribution. The specific implementation of this process includes the following steps:

[0095] Step a1: Normalize the physical parameters to obtain standard parameter data.

[0096] Specifically, through normalization, the weights of each parameter are balanced during the subsequent neural network training, improving the model's convergence speed and stability.

[0097] Step a2: Obtain the target mesh division model from the preset mesh division model database according to the environmental parameters.

[0098] Specifically, according to the shape, size of the vacuum chamber, and the range of the etching area, select a suitable mesh division model from the preset mesh division model database. For example, for a vacuum chamber with a regular shape, a Cartesian grid can be preferentially selected, and for a complex shape, an unstructured grid can be used.

[0099] Step a3: Discretize the vacuum space into grids based on the preset mesh division model and vacuum chamber parameters to obtain a plurality of grid cells.

[0100] Specifically, the continuous vacuum space is divided into discrete grids by the finite element method. The grid density is determined by the vacuum chamber parameters. The higher the vacuum degree, the longer the ion mean free path, and the grid size can be appropriately increased. By dividing regular or irregular grid cells and ensuring that the grid division density in the target area of ion beam etching, such as near the sample carrier device, is higher than other areas, the calculation accuracy can be guaranteed.

[0101] Step a4: Set the grid node coordinates for each grid cell to obtain a spatial framework;

[0102] Specifically, by converting the complex three-dimensional space into discrete nodes that can be processed by a computer, it is convenient to numerically calculate the intensity and direction of the electromagnetic field at all nodes. Through adaptive mesh refinement, the spatial resolution is effectively improved, and the accuracy of the subsequent physical field distribution is enhanced.

[0103] Step a5: Analyze the boundary range of the electric and magnetic fields in the vacuum space based on the physical parameters, and obtain the boundary values of the physical fields at the boundaries of the spatial framework.

[0104] Specifically, based on the installation positions, shapes, and parameter settings of the electric field generating device and the magnetic field generating device, determine the boundary range of the electric and magnetic fields in the vacuum space, and clarify the value conditions of the physical fields at the boundaries of the vacuum chamber. For example, the normal component of the electric field strength at the insulating boundary is 0, etc.

[0105] Step a6: Perform a spatial mapping of the boundary range and boundary values of the spatial framework to obtain the constraint range of the physical fields.

[0106] Specifically, based on the positions and parameters of the electric field generating device and the magnetic field generating device, combined with the boundary conditions of the vacuum chamber, combine the distribution range of the physical fields with the actual vacuum space structure to obtain the actual constraint range of the physical fields in the vacuum space, and determine the effective action region of the physical fields.

[0107] Step a7: Input the standard parameter data and the constraint range into a preset residual connection neural network model to obtain the physical field distribution.

[0108] Specifically, the residual connection neural network solves the problem of gradient degradation in deep networks through the residual block structure. Taking the normalized parameters and boundary conditions as inputs, it learns the distribution law of the electromagnetic field through multiple layers of convolution and activation functions, and outputs the electric field strength E(x, y, z) and magnetic field strength B(x, y, z) at each grid node, achieving fast prediction of the electromagnetic field distribution. Before performing model calculations, it also includes checking the parameter settings of the preset residual connection neural network model, including the number of network layers, the number of neurons, the type of activation function, etc. According to the specific parameters and calculation requirements of the current etching, fine-tune and optimize the model parameters to ensure that the model can accurately calculate the physical field distribution. After performing model calculations, it also includes a preliminary verification of the physical field distribution data output by the residual connection neural network model. By comparing and analyzing with known calculation results or historical experimental data, check the rationality and accuracy of the calculation results. If there are large deviations, re-check the parameter input and model configuration, and perform corrections and then recalculate.

[0109] In this embodiment, the parameter weights are balanced through normalization processing, providing a data basis for neural network training to ensure stable and rapid convergence of the model; adaptive mesh division is performed based on the vacuum chamber parameters, converting the complex space into computable discrete nodes, effectively improving the calculation efficiency and spatial resolution, and enhancing the calculation accuracy of the physical field; the constraint range of the physical field is determined through spatial mapping, excluding invalid calculation regions, reducing the calculation amount while enhancing the reliability of the results; the residual connection neural network is used to learn the complex electromagnetic field distribution law, and the electromagnetic field distribution is predicted. Through the above process, the efficiency of physical field analysis is effectively improved, and at the same time, the accuracy and stability of the calculation results are ensured.

[0110] This embodiment details the process of performing ion motion simulation based on the physical field distribution and background gas parameters in the above embodiment to obtain the spatial motion trajectory of ions. The specific implementation manner of this process includes the following steps:

[0111] Step b1: Discretize the ions into macro-particles containing multiple ions.

[0112] Specifically, aggregating actual ions into macro-particles can reduce the calculation amount, lower the calculation complexity, and improve the calculation efficiency while retaining the characteristics of the ion population.

[0113] Step b2: Allocate coordinates to the macro-particles according to the physical field distribution to obtain a macro-particle data set with position labels.

[0114] Specifically, by establishing the spatial correspondence relationship between the macro-particles and the physical field, the initial coordinate allocation error is reduced, providing an accurate starting point for subsequent trajectory calculation.

[0115] Step b3: Analyze the velocities and positions of the macro-particles within multiple preset time steps based on the electromagnetic field intensities at each point in the physical field distribution to obtain the initial motion trajectory.

[0116] Specifically, within each time step, the acceleration is calculated according to the Lorentz force formula, and the velocity and position are updated through a numerical integration algorithm, where the electromagnetic field intensity is taken from the data of the physical field distribution. By simulating the motion trajectory of the macro-particles in the electromagnetic field, the trajectory offset of the ion beam is predicted, and the position deviation of the ions reaching the specimen surface is accurately predicted, providing reliable data for the analysis of etching uniformity.

[0117] Lorentz force formula:

[0118] F = q(E + v × B)

[0119] Among them, F is the Lorentz force, q is the electric charge of the charged particle, E is the electric field strength vector, v is the velocity vector of the charged particle, and B is the magnetic induction intensity vector.

[0120] Step b4: Input the initial motion trajectory and background gas parameters into a preset collision model, and correct the initial motion trajectory according to the collision probability and cross-section parameters to obtain the spatial motion trajectory.

[0121] Specifically, based on the Monte Carlo collision model, analyze the collision probability between macro-particles and background gas molecules, and correct the velocity direction and energy according to the law of conservation of momentum after the collision to improve the accuracy of the actual motion of ions, making the corrected trajectory more accurate.

[0122] In this embodiment, the ion trajectory simulation efficiency is improved by mapping the macro-particle discretization and the physical field coordinates; at the same time, the Monte Carlo collision model is introduced to quantify the action of background gas molecules, dynamically correct the velocity and energy distribution, and restore the electromagnetic-collision coupling dynamics to improve the accuracy of trajectory prediction.

[0123] This embodiment details the process of analyzing the spatial potential difference and the spatial current formed by ions per unit area per unit time through the spatial motion trajectory and sample parameters. The specific implementation of this process includes the following steps:

[0124] Step c1: Analyze the number of ions passing through a unit area of the sample surface per unit time according to the spatial motion trajectory to obtain the spatial current formed by ions per unit area per unit time.

[0125] Specifically, by analyzing the number of ions passing through a unit area of the sample per unit time and combining the charge of a single ion, the spatial current density formed by ions can be calculated, and the ion motion trajectory can be converted into a quantifiable current parameter.

[0126] Step c2: Obtain the distribution information of ions on the sample surface based on the spatial motion trajectory and sample parameters.

[0127] Specifically, calculate the impact density of ions on the sample surface through a spatial distribution algorithm to obtain the distribution characteristics of ions on the sample surface.

[0128] Step c3: Calculate the potential information generated by the interaction between ions and the sample surface at different positions of the sample according to the distribution information and the material electrical properties in the sample parameters.

[0129] Specifically, the sample parameters include material electrical properties, sample material composition and structure, and geometric parameters; the potential change caused by the surface charge accumulation of the sample can be solved through the Poisson equation to quantify the potential change of the sample surface caused by ion bombardment.

[0130] Step c4: Calculate the spatial potential difference on the sample surface according to the potential information.

[0131] Specifically, the difference between the maximum and minimum potential values or the root mean square error is calculated by extracting the potential values at each point of the grid nodes on the sample surface, and the spatial potential difference on the sample surface is obtained. The spatial potential difference is used as a quantitative evaluation index for etching uniformity to reflect the consistency of the ion bombardment energy on the sample surface.

[0132] In this embodiment, through multi-parameter collaborative analysis, the etching rate is quantified to obtain the influence of the surface potential distribution on the etching uniformity, providing data support for optimizing the physical parameters of ion beam etching, which helps to improve the accuracy and reliability of parameter control.

[0133] Through the description of the above embodiments, those skilled in the art can clearly understand that the method according to the above embodiments can be implemented by means of software plus a necessary general hardware platform. Of course, it can also be implemented by hardware, but in many cases, the former is a better implementation method.

[0134] Figure 4 It is a schematic structural diagram of the ion beam etching parameter analysis device provided by the embodiment of the present application. As Figure 4 shown, the embodiment of the present application also provides an ion beam etching parameter analysis device. The ion beam etching parameter analysis device 40 includes: an acquisition module 401, a physical field analysis module 402, a simulation module 403, a sample analysis module 404, and an adjustment module 405. Among them, The acquisition module 401 is used to acquire environmental parameters and physical parameters. The environmental parameters include vacuum chamber parameters, background gas parameters, and sample parameters; the physical parameters include electric field parameters, magnetic field parameters, and current forms;

[0135] The physical field analysis module 402 is used to analyze the environmental parameters and physical parameters to obtain the physical field distribution;

[0136] The simulation module 403 is used to perform motion simulation on ions based on the physical field distribution and background gas parameters to obtain the spatial motion trajectory of the ions;

[0137] The sample analysis module 404 is used to analyze the spatial potential difference and the spatial current formed by ions per unit area per unit time through the spatial motion trajectory and sample parameters;

[0138] The adjustment module 405 is used to compare the spatial current and the spatial potential difference with their corresponding preset current thresholds and preset potential difference thresholds respectively. When the spatial current is less than the preset current threshold and / or the spatial potential difference is greater than the preset potential difference threshold, the physical parameters are adjusted and the step of analyzing the environmental parameters and physical parameters to obtain the physical field distribution is returned until the spatial current is greater than or equal to the preset current threshold and the spatial potential difference is less than the preset potential difference threshold to obtain the target physical parameters.

[0139] In a possible design, the physical field analysis module 402 is specifically configured to:

[0140] Normalize the physical parameters to obtain standard parameter data;

[0141] Discretize the vacuum space into grids based on a preset grid division model and vacuum chamber parameters, and construct a space framework by setting the grid node coordinates;

[0142] Perform spatial mapping of the boundary range of the space framework with the electric field and magnetic field respectively to obtain the constraint range of the physical field;

[0143] Input the standard parameter data and the constraint range into a preset residual connection neural network model to obtain the physical field distribution.

[0144] In a possible design, the simulation module 403 is further configured to:

[0145] Discretize the ions into macro-particles containing multiple ions;

[0146] Allocate coordinates to the macro-particles according to the physical field distribution to obtain a dataset of macro-particles with position labels;

[0147] Analyze the velocities and positions of the macro-particles within multiple preset time steps based on the electromagnetic field intensities at each point in space in the physical field distribution to obtain the initial motion trajectory;

[0148] Input the initial motion trajectory and background gas parameters into a preset collision model, and correct the initial motion trajectory according to the collision probability and cross-section parameters to obtain the spatial motion trajectory.

[0149] In a possible design, the sample analysis module 404 is specifically configured to:

[0150] Analyze the number of ions passing through a unit area of the sample surface per unit time according to the spatial motion trajectory to obtain the spatial current formed by ions per unit area per unit time.

[0151] Obtain the distribution information of ions on the sample surface based on the spatial motion trajectory and sample parameters.

[0152] Calculate the potential information generated by the interaction between ions and the sample surface at different positions of the sample according to the distribution information and the material electrical properties in the sample parameters.

[0153] Calculate the spatial potential difference on the sample surface according to the potential information.

[0154] For the description of the features in the corresponding embodiments of the ion beam etching parameter analysis device, reference can be made to the relevant descriptions in the corresponding embodiments of the ion beam etching parameter analysis method, which will not be elaborated here one by one.

[0155] Figure 5 This is a schematic structural diagram of the electronic device provided by the embodiment of the present application. As Figure 5 shown, the electronic device 50 provided in this embodiment includes: at least one processor 501 and a memory 502. Optionally, the electronic device 50 further includes a communication component 503. Among them, the processor 501, the memory 502, and the communication component 503 are connected through a bus.

[0156] In the specific implementation process, at least one processor 501 executes the computer-executable instructions stored in the memory 502, so that at least one processor 501 executes the above-mentioned ion beam etching parameter analysis method embodiment.

[0157] For the specific implementation process of the processor 501, reference can be made to the above method embodiment, and its implementation principle and technical effect are similar, which will not be elaborated here in this embodiment.

[0158] In the above embodiment, it should be understood that the processor may be a central processing unit (Central Processing Unit, abbreviated as: CPU), or other general-purpose processors, digital signal processors (Digital Signal Processor, abbreviated as: DSP), application specific integrated circuits (Application Specific Integrated Circuit, abbreviated as: ASIC), etc. The general-purpose processor may be a microprocessor or the processor may also be any conventional processor, etc. The steps of the method disclosed in combination with the application can be directly embodied as being executed by a hardware processor, or executed by a combination of hardware and software modules in the processor.

[0159] The memory may include a high-speed memory (Random Access Memory, RAM), and may also include a non-volatile memory (Non-volatile Memory, NVM), such as at least one disk memory.

[0160] The bus may be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus, etc. The bus can be divided into an address bus, a data bus, a control bus, etc. For the convenience of representation, the bus in the drawings of the present application is not limited to only one bus or one type of bus.

[0161] Embodiments of the present application also provide a computer-readable storage medium storing a computer program, where the computer program is configured to execute the steps in any of the above-described embodiments of the ion beam etching parameter analysis method when running.

[0162] In an exemplary embodiment, the above computer-readable storage medium may include, but is not limited to: various media such as USB flash drives, read-only memories (ROMs), random access memories (RAMs), external hard drives, magnetic disks, or optical discs that can store computer programs.

[0163] Embodiments of the present application also provide a computer program product, where the computer program product includes a computer program that, when executed by a processor, implements the steps in any of the above-described embodiments of the ion beam etching parameter analysis method.

[0164] Embodiments of the present application also provide another computer program product, including a non-volatile computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps in any of the above-described embodiments of the ion beam etching parameter analysis method.

[0165] Those skilled in the art can further realize that the units and algorithm steps of each example described in combination with the embodiments disclosed herein can be implemented by electronic hardware, computer software, or a combination of the two. To clearly illustrate the interchangeability of hardware and software, the components and steps of each example have been generally described according to their functions in the above description. Whether these functions are executed in a hardware or software manner depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods for each specific application to implement the described functions, but such implementation should not be considered to exceed the scope of the present application.

[0166] The above has introduced in detail an ion beam etching device and a parameter analysis method provided by the present application. Specific examples are used herein to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application. It should be noted that for those of ordinary skill in the art in the technical field, without departing from the principle of the present application, several improvements and modifications can be made to the present application, and these improvements and modifications also fall within the protection scope of the claims of the present application.

Claims

1. An ion beam etching device, characterized in that, Including: A film-forming vacuum chamber (101), an etching ion source (102), a specimen carrier device (103), an electric field generating device (104), and a magnetic field generating device (105); The etching ion source (102) is fixedly arranged inside the film-forming vacuum chamber (101), and the etching ion source (102) is used to generate an etching ion beam under vacuum conditions; The specimen carrier device (103) is fixedly arranged inside the film-forming vacuum chamber (101), at a position directly below the emission end of the etching ion source (102); The electric field generating device (104) is fixed to the bottom of the specimen carrier device (103), and the electric field generating device (104) is used to generate an electric field to apply an electric force to the ion beam to change the ion movement direction; The magnetic field generating device (105) is sleeved outside the film-forming vacuum chamber (101), and the magnetic field generating device (105) is used to cooperate with the electric field generating device (104) to change the movement direction and trajectory of the ions; the central height of the magnetic field generating device (105) is at the same horizontal height as the specimen carrier device (103) or lower than the horizontal height of the specimen carrier device (103).

2. The ion beam etching apparatus according to claim 1, characterized in that, The specimen carrier device (103) is disc-shaped, a central shaft (1031) is fixed to the bottom of the film-forming vacuum chamber (101), and the specimen carrier device (103) is rotationally connected to the film-forming vacuum chamber (101) through the central shaft (1031).

3. The ion beam etching device according to claim 1, characterized in that, It further includes an insulation protection structure (106), the insulation protection structure (106) includes an insulation gasket (1061) and an insulation outer shell (1062), the insulation gasket (1061) is arranged between the electric field generating device (104) and the specimen carrier device (103); the insulation outer shell (1062) is U-shaped, the electric field generating device (104) is arranged in the U-shaped groove of the insulation outer shell (1062), and the top end of the insulation outer shell (1062) is hermetically fixed to the insulation gasket (1061) to form a wrapping structure.

4. The ion beam etching device according to claim 1, characterized in that, The magnetic field generating device (105) includes: an electromagnetic coil (1051), a support cylinder (1052), and a fixing seat (1053); The support cylinder (1052) is a hollow structure, sleeved outside the film-forming vacuum chamber (101); the electromagnetic coil (1051) is a hollow circular coil wound in parallel, arranged outside the support cylinder (1052); a fixing seat (1053) is arranged below the support cylinder (1052), and the electromagnetic coil (1051) is fixedly arranged on the periphery of the vacuum chamber through the support cylinder (1052) and the fixing seat (1053).

5. The ion beam etching device according to claim 4, characterized in that The wire diameter of the electromagnetic coil (1051) is 0.5 mm to 2 mm, and the winding density is 10 to 50 turns / cm; the height of the support cylinder (1052) is 50 mm to 100 mm, and the current range of the electromagnetic coil (1051) is 0 to 20 A.

6. The ion beam etching apparatus according to claim 1, wherein, The electric field generating device (104) is a regulated power supply, and the current form is direct current or pulsed current.

7. The ion beam etching apparatus according to claim 6, characterized in that, When the current form is direct current, the DC voltage amplitude is 0 to -50V; when the current form is pulsed current, the pulsed voltage amplitude is 0 to -200V, the voltage duty cycle is 0 to 60%, and the frequency is 0 to 30000Hz.

8. A method for analyzing ion beam etching parameters, which is used to adjust the parameters of the ion beam etching device according to any one of claims 1-7, characterized in that, It includes: Obtaining environmental parameters and physical parameters, where the environmental parameters include vacuum chamber parameters, background gas parameters, and sample parameters; the physical parameters include electric field parameters, magnetic field parameters, and current form; Analyzing the environmental parameters and the physical parameters to obtain the physical field distribution; Based on the physical field distribution and the background gas parameters, performing ion motion simulation to obtain the spatial motion trajectory of ions; Analyzing the spatial potential difference and the spatial current formed by ions per unit area per unit time through the spatial motion trajectory and the sample parameters; Comparing the spatial current and the spatial potential difference with their corresponding preset current thresholds and preset potential difference thresholds respectively. When the spatial current is less than the preset current threshold and / or the spatial potential difference is greater than the preset potential difference threshold, adjusting the physical parameters and returning to the step of analyzing the environmental parameters and the physical parameters to obtain the physical field distribution until the spatial current is greater than or equal to the preset current threshold and the spatial potential difference is less than the preset potential difference threshold, so as to obtain the target physical parameters.

9. The method for analyzing ion beam etching parameters according to claim 8, wherein The step of analyzing the environmental parameters and the physical parameters to obtain the physical field distribution includes: Performing normalization processing on the physical parameters to obtain standard parameter data; Obtaining a target grid division model from a preset grid division model database according to the environmental parameters; Discretizing the vacuum space into grids based on the target grid division model and the vacuum chamber parameters to obtain a plurality of grid units; Setting grid node coordinates for each grid unit to obtain a spatial framework; Analyzing the boundary ranges of the electric field and the magnetic field in the vacuum space according to the physical parameters, and obtaining the boundary values of the physical field at the boundaries of the spatial framework; Performing spatial mapping on the boundary range of the spatial framework and the boundary values to obtain the constraint range of the physical field; Inputting the standard parameter data and the constraint range into a preset residual connection neural network model to obtain the physical field distribution.

10. The method for analyzing ion beam etching parameters according to claim 8, characterized in that, The step of performing ion motion simulation based on the physical field distribution and the background gas parameters to obtain the spatial motion trajectory of ions includes: Discretizing ions into macro-particles containing multiple ions; Performing coordinate assignment on the macro-particles according to the physical field distribution to obtain a macro-particle data set with position labels; Analyzing the velocities and positions of the macro-particles within multiple preset time steps based on the electromagnetic field intensities at each point in space in the physical field distribution to obtain an initial motion trajectory; Inputting the initial motion trajectory and the background gas parameters into a preset collision model, and correcting the initial motion trajectory according to the collision probability and cross-section parameters to obtain the spatial motion trajectory.

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