Perovskite photovoltaic cell with transparent cooling electrode and preparation method
By introducing a transparent cooling electrode structure into perovskite photovoltaic cells, reflecting near-infrared photons and enhancing mid-infrared radiation heat exchange, the stability and efficiency problems caused by heat accumulation of perovskite batteries are solved, and temperature reduction and efficiency improvement are achieved.
Patent Information
- Application Number
- CN202510530610.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-25
- Publication Date
- 2025-07-22
AI Technical Summary
In practical applications, perovskite solar cells have low efficiency in infrared and ultraviolet light, which leads to heat accumulation and increased working temperature, which affects stability and efficiency.
It adopts a transparent cooling electrode structure, including a front transparent packaging substrate, an upper transparent conductive layer, an ultra-thin metal functional layer and a lower transparent conductive layer, which reduces the battery temperature by reflecting near-infrared photons and enhancing mid-infrared radiation heat exchange.
Effectively reduce the operating temperature of perovskite photovoltaic cells, improve photoelectric efficiency, extend service life, improve thermal management, and avoid local overheating.
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Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of energy utilization, specifically relates to spectral design and perovskite solar photoelectric utilization technology, and particularly relates to a transparent conductive electrode for reducing the operating temperature of a perovskite photovoltaic device by reflecting near-infrared sunlight (0.8 - 2.5 μm) and enhancing mid-infrared radiation heat transfer (5 - 20 μm), while improving the service life and photoelectric efficiency of the perovskite photovoltaic device. Background Art
[0002] Perovskite solar cells have attracted much attention due to their high efficiency and low cost. However, the stability problem in practical applications has always been one of the core challenges hindering the commercialization of perovskite solar cells. The perovskite cells do not fully utilize the solar spectrum. Usually, they can only effectively absorb the visible light part, and the utilization efficiency of infrared and ultraviolet light is relatively low. This causes the sunlight energy not effectively absorbed to be converted into heat, thereby triggering a series of problems.
[0003] Firstly, excessive heat will cause the operating temperature of the photovoltaic cell to rise significantly. Research shows that the actual operating temperature of perovskite photovoltaic cells often exceeds 60°C. In a high-temperature environment, the thermal stability of perovskite materials significantly decreases and is prone to decomposition. For example, methylammonium iodide-based perovskite (MAPbI3) thin films will show obvious morphological changes in an 85°C environment, resulting in the attenuation of battery performance and even accelerating decomposition under the combined action of oxygen and moisture. Secondly, high temperature not only reduces the efficiency of perovskite photovoltaic cells but also may lead to the structural collapse of perovskite materials. The organic components contained in perovskite materials are volatile at high temperatures, resulting in a significant decrease in the photoelectric conversion efficiency of perovskite photovoltaic cells. Research shows that as the temperature rises, the photoelectric conversion efficiency of perovskite photovoltaic cells will decrease linearly, and under high-temperature conditions, the decomposition process of perovskite materials will accelerate, ultimately leading to battery failure. Summary of the Invention
[0004] In order to reduce the operating temperature of perovskite solar cells and improve the efficiency and stability of perovskite photovoltaic cells at the same time, the present invention provides a perovskite photovoltaic cell with a transparent cooling electrode and a preparation method thereof.
[0005] A perovskite photovoltaic cell with a transparent cooling electrode includes an upper electrode structure, a perovskite photovoltaic cell body, and a back electrode structure; the perovskite photovoltaic cell body is composed of an electron transport layer 5, a perovskite absorption layer 6, and a hole transport layer 7 connected in sequence from top to bottom, and the back electrode structure is composed of a metal back electrode 8, an insulating connection layer 9, and a back encapsulation layer 10 connected in sequence from top to bottom; under vacuum conditions, the metal back electrode 8 is thermally evaporated on the hole transport layer 7 to realize the fixed connection between the perovskite photovoltaic cell body and the back electrode structure; The upper electrode structure is composed of a front transparent encapsulation substrate 1, an upper transparent conductive layer 2, an ultra-thin metal functional layer 3, and a lower transparent conductive layer 4 from top to bottom; the material of the upper transparent conductive layer 2 is zinc oxide, or aluminum-doped zinc oxide, or indium tin oxide, or titanium dioxide; The material of the lower transparent conductive layer 4 is zinc oxide, or aluminum-doped zinc oxide, or indium tin oxide; The lower transparent conductive layer 4 of the electrode structure is grown on the electron transport layer 5 of the battery body structure by magnetron sputtering to form a perovskite photovoltaic cell; The weighted absorption rate of the perovskite photovoltaic cell in the visible light band of 0.3 - 0.8 μm is greater than 0.90, the weighted reflectance in the near-infrared band of 0.8 - 2.5 μm is greater than 0.46, and the emissivity in the mid-infrared band of 5 - 20 μm is greater than 0.88; under the standard photovoltaic test conditions, the working temperature is 59 °C.
[0006] In the aluminum-doped zinc oxide, the doping ratios of zinc oxide and aluminum are both 97:3.
[0007] The material of the metal back electrode 8 is gold or silver.
[0008] The preparation operation steps of the perovskite photovoltaic cell with a transparent cooling electrode are as follows: (1) Put the quartz glass substrate into an ultrasonic cleaner, add isopropyl alcohol, and ultrasonically clean for 15 min; clean with deionized water and dry with nitrogen blowing to obtain the front transparent encapsulation substrate 1; (2) Use magnetron sputtering to sputter a 50-nm seed layer on the front transparent encapsulation substrate 1 as the upper transparent conductive layer 2 of the transparent cooling electrode; (3) Use magnetron sputtering to sputter 8-nm-thick silver on the upper transparent conductive layer 2 to obtain the ultra-thin metal functional layer 3; (4) Sputter a 50-nm transparent conductive layer on the ultra-thin metal silver layer 3 as the lower transparent conductive layer 4 to obtain the upper electrode structure; (5) Prepare the battery body and the back electrode structure on the lower transparent conductive layer 4 of the upper electrode structure according to the manufacturing method of the perovskite photovoltaic cell, and finally obtain the perovskite photovoltaic cell with a transparent cooling electrode.
[0009] The beneficial technical effects of the present invention are reflected in the following aspects: Photovoltaic conversion is the most important way of solar energy utilization, and the popularization of photovoltaic technology is extremely promising for achieving the "dual carbon" goal. Perovskite solar cells have advantages such as higher theoretical efficiency, adjustable bandgap, thin and flexible, and lower processing costs compared with crystalline silicon solar cells, which has attracted more and more attention. However, the perovskite solar cells do not fully utilize the spectrum and generate heat during operation. The increase in temperature will lead to an increase in internal thermal loss of the battery and reduce the photovoltaic conversion efficiency. At the same time, high temperature will accelerate the thermal degradation process of perovskite materials, resulting in the attenuation of battery performance. In addition, the hysteresis phenomenon of perovskite solar cells will also be aggravated at high temperature, affecting the stability and reliability of the battery.
[0010] Conventional perovskite photovoltaic cells can only utilize solar photons above the bandgap. Photons below the bandgap are absorbed by the perovskite photovoltaic cells and converted into heat, which accumulates inside the battery, resulting in an increase in the temperature of the perovskite photovoltaic cell. Since the power temperature coefficient of the perovskite photovoltaic cell is negative, the increase in temperature causes the electrical efficiency of the perovskite photovoltaic cell to decrease. Therefore, on the premise of ensuring high absorption of photons above the bandgap, the present invention fundamentally solves the problem of overheating of perovskite photovoltaic cells by reflecting photons below the bandgap of perovskite photovoltaic cells. See Figure 2 , the transparent electrode proposed in the present invention adopts a dielectric-metal-dielectric structure, which enhances the coupling effect between the ultra-thin metal functional layer 3 and photons above the bandgap, reduces optical losses, and the ultra-thin metal functional layer 3 selects silver with strong conductivity as its material. Due to the large number of free electrons inside, when photons below the bandgap reach the silver surface, the free electrons will be driven by the incident optical field to oscillate. The oscillating electrons interact with the incident light, causing the photons to be reflected back, thus achieving the purpose of reflecting photons below the bandgap of perovskite photovoltaic cells. According to classical electromagnetic theory, the free electrons in silver can be regarded as a plasma. When the frequency of the incident photon is lower than the metal plasma frequency, the metal exhibits high reflectivity to light. For silver material, its plasma frequency is located in the ultraviolet band, and the frequency of photons below the bandgap of perovskite photovoltaic cells is lower than the plasma frequency. Therefore, silver has a high reflectivity to photons below the bandgap of perovskite photovoltaic cells. At the same time, see Figure 1, the selected front transparent encapsulation substrate 1 is quartz glass with high mid-infrared emissivity, which further improves the mid-infrared radiation emissivity of the perovskite photovoltaic cell, enhances the radiative heat transfer between the perovskite photovoltaic cell and the sky, and further reduces the temperature of the perovskite photovoltaic cell. Cooling the perovskite photovoltaic cell can increase the open-circuit voltage during the operation of the perovskite photovoltaic cell, thereby improving the photoelectric efficiency of the perovskite photovoltaic cell. The perovskite photovoltaic cell proposed by the present invention can reflect 46% of the unused energy in the near-infrared band (0.8 - 2.5 μm), thereby reducing the operating temperature of the perovskite photovoltaic cell and improving its photoelectric efficiency during operation. An absorption rate of 0.9 in the photoelectric utilization band (0.3 - 0.8 μm) ensures the basic efficiency of the perovskite photovoltaic cell, while maintaining an emissivity of 0.88 in the mid-infrared band (5 - 25 μm), improving the radiative heat dissipation ability of the perovskite photovoltaic cell and further enhancing the cooling ability. Under standard test conditions, the working temperature of the transparent and coolable perovskite cell is 59°C, and the photoelectric efficiency is 17.66%, while the operating temperature of the traditional perovskite photovoltaic cell is 65°C, and the photoelectric efficiency is 16.83%. Compared with the traditional perovskite photovoltaic cell, the temperature drop of the present invention reaches 6°C, and the photoelectric efficiency during operation is relatively increased by 5%. See Figure 3 , for the perovskite photovoltaic cell with an ideal cooling electrode under standard test conditions, the operating temperature is 47°C, the temperature drop reaches 18°C, and the electrical efficiency is 18.27%, which is 9% higher than that of traditional devices. For detailed data, see Figure 6 . Therefore, the proposed perovskite photovoltaic cell with a cooling electrode can significantly reduce the working temperature of the perovskite photovoltaic device, improve the photoelectric conversion efficiency, delay the decomposition of the perovskite absorption layer, and thus extend the service life of the perovskite device.
[0011] Compared with traditional cooling methods such as water cooling, the present invention can achieve efficient thermal management without increasing the system complexity. The cooling measures can improve the thermal management of the battery, enable heat to be conducted out of the battery more effectively, and avoid local overheating.
[0012] In summary, the cooling of perovskite cells has significant benefits in terms of improving efficiency, extending lifespan, enhancing stability and reliability, etc., and is of great significance for promoting the practical application of perovskite solar cells. The present invention can be directly applied to the field of perovskite photovoltaics, realizing efficient perovskite devices and effectively extending their service life. It has great development potential in the field of solar energy utilization, with high industrial feasibility, good market application and prospects, and practical application value. Brief Description of the Drawings
[0013] Figure 1 It is a schematic diagram of a device with a transparent and coolable electrode suitable for perovskite photovoltaic cells.
[0014] Figure 2It is a schematic diagram of an electrode of a transparent and temperature-lowering electrode applicable to a perovskite photovoltaic cell.
[0015] Figure 3 It is a schematic diagram of the device spectrum of a transparent and temperature-lowering electrode applicable to a perovskite photovoltaic cell.
[0016] Figure 4 It is a measured reflection spectrum diagram in the solar band (0.3 - 2.5 μm) of Examples 1, 2, 3, and 4.
[0017] Figure 5 It is a measured reflection spectrum diagram in the mid-infrared band (5 - 20 μm) of Examples 1, 2, 3, and 4.
[0018] Figure 6 It is the stagnation temperature diagram of Examples 1, 2, 3, and 4 at an ambient temperature of 25 °C and a solar irradiance of 1000 W / m 2 under the working condition. Detailed implementation manners
[0019] To make the objectives, technical solutions, and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below. Apparently, the described examples are a part of the examples of the present invention, rather than all the embodiments. All other example cases obtained by those of ordinary skill in the art without creative efforts based on the embodiments in the present invention belong to the scope protected by the present invention. The following embodiments are used to illustrate the present invention, but cannot be used to limit the scope of the present invention.
[0020] The difference between the present invention and traditional perovskite photovoltaic cells lies in the different top transparent temperature-lowering electrode 12. Therefore, in different embodiments, except for the differences in the preparation of the temperature-lowering electrode 12, the preparation processes of the electron transport layer 5, absorption layer 6, hole transport layer 7, metal back electrode 8, insulating connection layer 9, and back encapsulation layer 10 of the perovskite cell are the same as those of traditional perovskite device manufacturing processes. Example 1
[0021] Refer to Figure 1 , and the preparation operation steps of the perovskite photovoltaic cell with a transparent temperature-lowering electrode are as follows: Step (1): Place the quartz glass substrate in an ultrasonic cleaner, add isopropanol, and ultrasonically clean for 15 minutes. After cleaning, take out the glass substrate and clean it with plasma water. Finally, use nitrogen gas to blow-dry the glass substrate to obtain the front transparent encapsulation substrate 1.
[0022] Step 2: Sputter 50 nm of zinc oxide (ZnO) on the front transparent encapsulation substrate 1 by magnetron sputtering as an ultra-thin metal seed layer, that is, as the upper transparent conductive layer 2 of the transparent temperature-lowering electrode.
[0023] Step 3: Sputter 8 nm of silver (Ag) onto the upper transparent conductive layer 2 by magnetron sputtering to serve as the ultra-thin metal functional layer 3.
[0024] Step 4: Sputter 50 nm of zinc oxide (ZnO) onto the ultra-thin metal functional layer 3 to serve as the lower transparent conductive layer 4, obtaining the upper electrode structure. See Figure 2 .
[0025] Step 5: Place the upper electrode structure into an ultrasonic cleaner, pour in the isopropyl alcohol cleaning solution, and ultrasonically clean for 15 minutes to remove dust and organic substances on the surface. Take out the cleaned upper electrode structure, rinse it thoroughly with deionized water to remove the residual cleaning solution. Use nitrogen to blow dry the moisture on the substrate surface to obtain the upper electrode substrate.
[0026] Step 6: Place the upper electrode substrate into an ultraviolet ozone cleaning device and perform ultraviolet ozone treatment for 15 minutes to further clean the surface and increase the surface energy, enhancing the adhesion of the subsequent film, obtaining a cleaned upper electrode substrate.
[0027] Step 7: Mix tin oxide (SnO2) and ammonia water (NH3·H2O) in a volume ratio of 1:9 to obtain a tin oxide (SnO2) colloidal solution. Under the condition of a rotation speed of 6000 rpm / min, spin-coat the prepared tin oxide colloidal solution onto the lower transparent conductive layer 4 of the cleaned upper electrode substrate for 30 s; finally, anneal at 150 °C for 30 min to obtain the tin oxide (SnO2) electron transport layer 5.
[0028] Step 8: Mix formamidinium hydroiodide (FAI), cesium iodide (CsI), lead iodide (PbI2), 800 μl of dimethylformamide, and 200 μl of dimethyl sulfoxide (DMSO) evenly to obtain a 1.4 mol / L perovskite precursor solution (FA 0.94 Cs 0.06 PbI3). Then add 4.8 g of cesium chloride (CsCl) to improve the crystallinity, obtaining a spin-coating solution. Next, spin-coat 25 μl of the spin-coating solution onto the electron transport layer 5 at a rotation speed of 5000 rpm / min for 35 s. When spinning for 20 s, drop 140 μl of ethyl acetate onto the spin-coated film, and then anneal at 150 °C for 20 min to obtain the perovskite absorption layer 6.
[0029] Step 9: Mix 72.3 mg of 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), 17.5 μl of lithium bis(trifluoromethanesulfonyl)imide with a mass volume concentration of 520 mg / ml, 29 μl of tributyl phosphate (tBP), and 1 ml of chlorobenzene uniformly to obtain a hole transport material solution; spin-coat it on the perovskite absorption layer 6 for 30 s at a rotation speed of 4000 rpm / min to obtain a hole transport layer 7.
[0030] Step 10: Under a vacuum condition of 2 × 10 −6 Pa, thermally evaporate an 80-nm gold (Au) back electrode 8 at a rate of 0.05 nm / s to obtain a perovskite photovoltaic cell.
[0031] Step 11: Use a polyolefin elastomer (POE) as a binder for the insulating connection layer, connect the perovskite photovoltaic cell and the back encapsulation layer 10 (glass) together by hot pressing, and finally apply butyl rubber to the edge of the cell to complete the encapsulation of the cell, see Figure 1 .
[0032] For the perovskite photovoltaic cell with a transparent cooling electrode prepared in this Example 1, the weighted absorption rate in the visible light band (0.3 - 0.8 μm) is 0.93, the weighted reflectance in the near-infrared (0.8 - 2.5 μm) is 0.46, see Figure 4 , and the weighted emissivity in the mid-infrared band (5 - 20 μm) is 0.88, see Figure 5 . At an ambient temperature of 25°C and under illumination of 1000 W / m 2 ², the operating temperature of the perovskite photovoltaic cell is 59°C, and the efficiency is 17.61%, see Figure 6 .
[0033] In this Example 1, steps (5) - (11) are the manufacturing methods of traditional perovskite photovoltaic cells. Example 2
[0034] The preparation operation steps of the perovskite photovoltaic cell with a transparent cooling electrode are as follows: Step 1: Place the quartz glass substrate in an ultrasonic cleaner, add isopropyl alcohol, and ultrasonically clean for 15 min. After cleaning, take out the glass substrate and clean it with plasma water. Finally, dry the glass substrate by blowing with nitrogen to obtain a front transparent encapsulation substrate 1.
[0035] Step 2: Use magnetron sputtering to sputter 50 nm of aluminum-doped zinc oxide (the doping ratio of zinc oxide and aluminum is 97:3) on the cleaned glass substrate as an ultrathin metal seed layer and at the same time as the upper transparent conductive layer 2 of the transparent cooling electrode.
[0036] Step 3: Sputter 8 nm of silver (Ag) on the upper transparent conductive layer 2 by magnetron sputtering to serve as the ultra-thin metal functional layer 3.
[0037] Step 4: Finally, sputter 50 nm of aluminum-doped zinc oxide (the doping ratio of zinc oxide and aluminum is 97:3) on the ultra-thin metal functional layer 3 to obtain the lower transparent conductive layer 4. See Figure 2 , and the fabrication of the upper electrode structure is completed, i.e., the transparent cooling electrode.
[0038] Steps (5)-(9), step (11) are the same as in Example 1, except for step (10). Under a vacuum condition of 2 × 10 −6 Pa, thermally evaporate 80 nm of silver (Ag) back electrode 8 at a rate of 0.08 nm / s.
[0039] For the perovskite photovoltaic cell with a transparent cooling electrode prepared in this Example 2, the weighted absorption rate in visible light (0.3 - 0.8 μm) is 0.90, the weighted reflectance in the near-infrared region (0.8 - 2.5 μm) is 0.46. See Figure 4 , and the weighted emissivity in the mid-infrared region (5 - 20 μm) is 0.88. See Figure 5 . At an ambient temperature of 25°C and under illumination of 1000 W / m 2 ², the operating temperature of Example 2 is 59°C and the efficiency is 17.66%. See Figure 6 . Example 3
[0040] The preparation operation steps of the perovskite photovoltaic cell with a transparent cooling electrode are as follows: Step 1: Place the quartz glass substrate in an ultrasonic cleaner, add isopropanol, and ultrasonically clean for 15 min. After cleaning, take out the glass substrate and clean it with deionized water. Finally, use nitrogen gas to blow dry the glass substrate to obtain the front transparent encapsulation substrate 1.
[0041] Step 2: Sputter 50 nm of indium tin oxide (ITO) on the front transparent encapsulation substrate 1 by magnetron sputtering to serve as the ultra-thin metal seed layer, i.e., the upper transparent conductive layer 2 of the transparent cooling electrode.
[0042] Step 3: Sputter 8 nm of silver (Ag) on the upper transparent conductive layer 2 of indium tin oxide by magnetron sputtering to serve as the ultra-thin metal functional layer 3.
[0043] Step 4: Finally, sputter 50 nm of indium tin oxide (ITO) on the ultra-thin metal functional layer 3 to serve as the lower transparent conductive layer 4. The fabrication of the upper electrode structure is completed.
[0044] Steps (5)-(9), step (11) are the same as in Example 1, except for step (10). Under a vacuum condition of 2 × 10−6 Under a vacuum condition of Pa, at a rate of 0.08 nm / s, thermally evaporate an 80-nm silver (Ag) back electrode 8.
[0045] For the perovskite photovoltaic cell with a transparent cooling electrode prepared in this Example 3, the weighted absorption rate in visible light (0.3 - 0.8 μm) is 0.88, and the weighted reflectivity in the near-infrared (0.8 - 2.5 μm) is 0.50. See Figure 4 , and the weighted emissivity in the mid-infrared (5 - 20 μm) is 0.88. See Figure 5 . Under the condition of an environmental temperature of 25°C and light intensity of 1000 W / m 2 , the operating temperature of Example 3 is 56°C, and the efficiency is 16.68%. See Figure 6 . Example 4
[0046] The preparation operation steps of the perovskite photovoltaic cell with a transparent cooling electrode are as follows: Step 1: Place the quartz glass substrate into an ultrasonic cleaner, add isopropanol, and ultrasonically clean for 15 minutes. After cleaning, take out the glass substrate and clean it with deionized water. Finally, dry it with nitrogen to obtain the front transparent encapsulation substrate 1.
[0047] Step 2: Use magnetron sputtering to sputter 25 nm of titanium dioxide (TiO2) on the front transparent encapsulation substrate 1 as an ultrathin metal seed layer, that is, as the upper transparent conductive layer 2 of the transparent cooling electrode.
[0048] Step 3: Use magnetron sputtering to sputter 8 nm of silver (Ag) on the upper transparent conductive layer 2 as an ultrathin metal functional layer 3.
[0049] Step 4: Finally, sputter 45 nm of indium tin oxide (ITO) on the surface of the ultrathin metal functional layer 3 as the lower transparent conductive layer 4. Complete the fabrication of the upper electrode structure.
[0050] Steps (5) - (11) are the same as those in Example 1.
[0051] For the perovskite photovoltaic cell with a transparent cooling electrode prepared in this Example 4, the weighted absorption rate in visible light (0.3 - 0.8 μm) is 0.9, and the weighted reflectivity in the near-infrared (0.8 - 2.5 μm) is 0.40. See Figure 4 , and the weighted emissivity in the mid-infrared (5 - 20 μm) is 0.88. See Figure 5 . Under the condition of an environmental temperature of 25°C and light intensity of 1000 W / m 2 , the operating temperature of Example 4 is 60°C, and the efficiency is 13.58%. See Figure 6 .
[0052] Those skilled in the art can easily understand that the above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.
Claims
1. A perovskite photovoltaic cell with a transparent cooling electrode, comprising an upper electrode structure, a perovskite photovoltaic cell body, and a back electrode structure; the perovskite photovoltaic cell body is composed of an electron transport layer (5), a perovskite absorption layer (6), and a hole transport layer (7) connected in sequence from top to bottom, and the back electrode structure is composed of a metal back electrode (8), an insulating connection layer (9), and a back encapsulation layer (10) connected in sequence from top to bottom; under vacuum conditions, the metal back electrode (8) is thermally evaporated on the hole transport layer (7) to achieve a fixed connection between the perovskite photovoltaic cell body and the back electrode structure, characterized in that: The upper electrode structure is composed of a front transparent encapsulation substrate (1), an upper transparent conductive layer (2), an ultra-thin metal functional layer (3), and a lower transparent conductive layer (4) from top to bottom; The material of the upper transparent conductive layer (2) is zinc oxide, or aluminum-doped zinc oxide, or indium tin oxide, or titanium dioxide; The material of the lower transparent conductive layer (4) is zinc oxide, or aluminum-doped zinc oxide, or indium tin oxide; The lower transparent conductive layer (4) of the electrode structure is grown on the electron transport layer (5) of the battery body structure by magnetron sputtering to form a perovskite photovoltaic cell; The perovskite photovoltaic cell has a weighted absorption rate greater than 0.90 in the visible light band of 0.3 - 0.8 μm, a weighted reflectance greater than 0.46 in the near-infrared band of 0.8 - 2.5 μm, and an emissivity greater than 0.88 in the mid-infrared band of 5 - 20 μm; under standard photovoltaic test conditions, the working temperature is 59 °C.
2. The perovskite photovoltaic cell with a transparent cooling electrode according to claim 1, characterized in that: In the aluminum-doped zinc oxide, the doping ratios of zinc oxide and aluminum are both 97:
3.
3. The preparation method of the perovskite photovoltaic cell with a transparent cooling electrode according to claim 1, characterized in that, The operation steps are as follows: (1) Put the quartz glass substrate into an ultrasonic cleaner, add isopropanol, and ultrasonically clean for 15 min; clean with deionized water and dry with nitrogen blowing to obtain the front transparent encapsulation substrate (1); (2) Use magnetron sputtering to sputter a 50 nm seed layer on the front transparent encapsulation substrate (1) as the upper transparent conductive layer (2) of the transparent cooling electrode; (3) Use magnetron sputtering to sputter silver with a thickness of 8 nm on the upper transparent conductive layer (2) to obtain the ultra-thin metal functional layer (3); (4) Sputter a 50 nm transparent conductive layer on the ultra-thin metal silver layer (3) as the lower transparent conductive layer (4) to obtain the upper electrode structure; (5) Prepare the battery body and the back electrode structure on the lower transparent conductive layer (4) of the upper electrode structure according to the manufacturing method of the perovskite photovoltaic cell, and finally obtain a perovskite photovoltaic cell with a transparent cooling electrode.