Asymmetric electrode spin probability bit device and control method thereof

Abstract

The invention provides an asymmetric electrode spin probability bit device and a control method thereof, and relates to the technical field of spin probability bits. The asymmetric electrode spin probability bit device comprises a spin conversion layer which is set to be an asymmetric electrode structure and is configured to convert injected pulses into in-plane spin gradient flows under the action of an asymmetric electric field formed by the asymmetric electrode structure; the magnetic free layer is arranged on the surface of the spin conversion layer; wherein the in-plane spin gradient flow is regulated and controlled based on the size and the pulse direction of the injected pulse so as to control the size and the direction of the out-of-plane effective field borne by the magnetic free layer; according to the out-of-plane effective field, the magnetization state of the magnetic free layer is switched between a first magnetization state and a second magnetization state under the condition of any initial magnetization state, and the probability of switching to any magnetization state between the first magnetization state and the second magnetization state is regulated and controlled, the magnetization directions of the first magnetization state and the second magnetization state are opposite.

Description

Technical Field

[0001] The present disclosure relates to the technical field of spin probability qubits, and more particularly, to an asymmetric electrode spin probability qubit device and a control method thereof. Background Art

[0002] Traditional computers are difficult to effectively solve problems such as optimization, sampling, and inverse calculation. Although quantum computers can efficiently process such problems, they need to operate in a low-temperature environment. The probabilistic qubit circuit inspired by quantum computing can solve these problems using randomness at room temperature. Among them, the low-barrier probabilistic qubit device based on Spin-Transfer Torque (STT) is difficult to achieve large-scale homogeneous integration due to poor thermal stability. In contrast, the Spin-Orbit Torque (SOT) device with perpendicular magnetic anisotropy has the advantages of high thermal stability, non-volatility, and process compatibility, and is more suitable for constructing a uniform and stable large-scale circuit. However, the existing fully electric-controlled vertical SOT probabilistic qubit scheme has deficiencies: it relies on a synchronous / asynchronous dual-pulse or multi-pulse control mechanism, significantly increasing the complexity of circuit design and timing control. Summary of the Invention

[0003] In view of this, the present disclosure provides an asymmetric electrode spin probability qubit device and a control method thereof to at least partially solve the above technical problems. On the one hand, the present disclosure provides an asymmetric electrode spin probability qubit device, including: a spin conversion layer, configured as an asymmetric electrode structure, and configured to convert the injected pulse into an in-plane spin gradient flow under the action of an asymmetric electric field formed by the asymmetric electrode structure; and a magnetic free layer, disposed on the surface of the spin conversion layer; wherein, the in-plane spin gradient flow is regulated based on the size and direction of the injected pulse to control the size and direction of the out-of-plane effective field received by the magnetic free layer; according to the out-of-plane effective field, the magnetic free layer can be switched between a first magnetization state and a second magnetization state in any initial magnetization state, and the probability of switching to any one of the magnetization states between the first magnetization state and the second magnetization state is regulated, and the magnetization directions of the first magnetization state and the second magnetization state are opposite.

[0004] According to an embodiment of the present disclosure, the magnetic free layer is configured to: generate an out-of-plane effective field acting on the magnetic free layer according to the in-plane spin gradient flow.

[0005] According to an embodiment of the present disclosure, it further includes: a magnetic reference layer, disposed on the surface of the magnetic free layer away from the spin conversion layer; wherein, in the case of no injected pulse, under the action of the dipole field of the magnetic reference layer, the bias field of the magnetic free layer biases towards the first direction.

[0006] According to an embodiment of the present disclosure, the magnetic free layer is further configured to: when injecting a pulse into the spin conversion layer, control the direction and magnitude of the pulse to regulate the out-of-plane effective field; under the action of the out-of-plane effective field and the dipole field, regulate the bias field to bias towards the first direction or the second direction, where the first direction and the second direction are opposite.

[0007] According to an embodiment of the present disclosure, it further includes: an orbital Hall layer, disposed on the first surface or the second surface of the spin conversion layer, for converting the injected pulse into an orbital current, and the orbital current is converted into a spin current through atoms in the spin conversion layer and / or atoms in the magnetic free layer; where the first surface is opposite to the second surface, and the magnetic free layer is disposed on the first surface.

[0008] According to an embodiment of the present disclosure, the material of the orbital Hall layer includes at least one of Ir, Mo, W, Cu, Cr, Ti, V, Mn.

[0009] According to an embodiment of the present disclosure, the material of the spin conversion layer includes at least one of transition metals, rare earth elements, alloys of transition metals and rare earth elements, half-metals, topological insulators, binary transition metal compounds.

[0010] The second aspect of the present disclosure provides a control method for an asymmetric electrode spin probability qubit, including: based on the asymmetric electric field formed by the asymmetric electrodes of the spin conversion layer, regulating the magnitude and direction of the pulse injected into the spin conversion layer to control the generated in-plane spin gradient current; regulating the magnitude and direction of the out-of-plane effective field received by the magnetic free layer in the spin probability qubit according to the in-plane spin gradient current, so that the magnetization state of the magnetic free layer switches between the first magnetization state and the second magnetization state, and regulating the probability of switching to any one of the magnetization states between the first magnetization state and the second magnetization state, where the magnetization directions of the first magnetization state and the second magnetization state are opposite.

[0011] According to an embodiment of the present disclosure, when the pulse is the first pulse, the magnetic free layer is switched from any initial magnetization state to the first magnetization state; when the pulse is the second pulse, the magnetic free layer is switched from any initial magnetization state to the second magnetization state; when the pulse is the third pulse, regulate the magnitude of the third pulse to regulate the probability that the magnetic free layer is switched from any initial magnetization state to any one of the magnetization states between the first magnetization state and the second magnetization state; where the amplitude of the first pulse is less than the amplitude of the third pulse, and the amplitude of the third pulse is less than the amplitude of the second pulse.

[0012] According to an embodiment of the present disclosure, it further includes: injecting a fourth pulse into the spin-orbit torque probabilistic bit, and reading the magnetoresistance of the spin-orbit torque probabilistic bit by measuring the magnetoresistance state of the tunnel junction; wherein, the magnetoresistance state includes: a first resistance state, which is used to characterize that the magnetization states of the magnetic free layer and the magnetic reference layer are arranged in parallel; a second resistance state, which is used to characterize that the magnetization states of the magnetic free layer and the magnetic reference layer are arranged in antiparallel.

[0013] The asymmetric electrode spin probabilistic bit provided according to an embodiment of the present disclosure has at least the following beneficial effects:

[0014] By setting the spin conversion layer with an asymmetric electrode structure, the injected pulsed current can be converted into an in-plane spin gradient current. This spin gradient current can generate an out-of-plane effective field on the magnetic free layer, thereby controlling the magnetization state of the magnetic free layer. Different from the traditional double-pulse or multi-pulse control schemes, in the present disclosure, under the condition of the existence of the dipole field, the magnetization state switching of the magnetic free layer can be achieved by regulating a single pulse, significantly simplifying the circuit design and timing control. At the same time, due to the adoption of the single-pulse control mechanism, the circuit design is more simplified, making the spin probabilistic bit device more suitable for large-scale integration and improving the integration density of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Through the following description of the embodiments of the present disclosure with reference to the drawings, the above and other objects, features, and advantages of the present disclosure will become clearer. In the drawings:

[0016] Figure 1 Schematically shows the structural diagram of an asymmetric electrode spin probabilistic bit device according to an embodiment of the present disclosure;

[0017] Figure 2 Schematically shows the top view of the spin conversion layer according to an embodiment of the present disclosure;

[0018] Figure 3 Schematically shows the schematic diagram of the hysteresis loop of the magnetic free layer in the case of no injected pulse according to an embodiment of the present disclosure;

[0019] Figure 4 Schematically shows the schematic diagram of the hysteresis loop of the magnetic free layer when the pulse is the first pulse according to an embodiment of the present disclosure.

[0020] Figure 5 Schematically shows the schematic diagram of the hysteresis loop of the magnetic free layer when the pulse is the second pulse according to an embodiment of the present disclosure;

[0021] Figure 6 Schematically shows the schematic diagram of the relationship between the switching probability and the pulse magnitude according to an embodiment of the present disclosure;

[0022] Figure 7Schematically shows a schematic diagram of the flow directions of a first pulse, a second pulse, and a third pulse according to an embodiment of the present disclosure;

[0023] Figure 8 Schematically shows a schematic diagram of the flow direction of a fourth pulse according to an embodiment of the present disclosure. Detailed implementation manners

[0024] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. In the following detailed description, for the sake of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, obviously, one or more embodiments can also be implemented without these specific details. In addition, in the following description, descriptions of well-known systems and technologies are omitted to avoid unnecessarily confusing the concepts of the present disclosure.

[0025] The terms used herein are merely for describing specific embodiments and are not intended to limit the present disclosure. The terms "including", "comprising", etc. used herein indicate the presence of features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0026] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0027] In the case of using expressions such as "at least one of A, B, and C, etc.", generally, it should be interpreted according to the meaning commonly understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include, but is not limited to, a system having only A, only B, only C, having A and B, having A and C, having B and C, and / or having A, B, and C, etc.).

[0028] Figure 1 Schematically shows a structural diagram of an asymmetric electrode spin probability qubit device according to an embodiment of the present disclosure.

[0029] As Figure 1 shown, this embodiment provides that the asymmetric electrode spin probability qubit device includes: a spin conversion layer 10 and a magnetic free layer 20.

[0030] The spin conversion layer 10 is arranged as an asymmetric electrode structure, that is, an asymmetric bottom electrode layer, and is configured to convert the injected pulse into an in-plane spin gradient flow under the action of the asymmetric electric field formed by the asymmetric electrode structure.

[0031] The magnetic free layer 20 is disposed on the surface of the spin conversion layer 10.

[0032] Wherein, based on the magnitude and direction of the pulse injected into the spin conversion layer 10, the in-plane spin gradient flow generated is regulated.

[0033] According to the in-plane spin gradient flow, the magnitude and direction of the out-of-plane effective field acting on the magnetic free layer 20 are regulated.

[0034] Based on the relative magnitudes of the out-of-plane effective field and the dipole field, the magnetization state of the magnetic free layer 20 is switched between a first magnetization state and a second magnetization state. And the probability of switching to any one of the magnetization states between the first magnetization state and the second magnetization state is regulated, and the magnetization directions of the first magnetization state and the second magnetization state are opposite.

[0035] In an embodiment of the present disclosure, the spin conversion layer is designed as an asymmetric electrode structure, that is, its geometric shape is asymmetric in the plane, and the injected pulse can be converted into an in-plane spin gradient flow. Specifically, when a current passes through the spin conversion layer 10, due to the spin-orbit coupling effect and the action of the asymmetric electric field of the asymmetric electrode structure, the current will be converted into an in-plane spin gradient flow, that is, a spin current with non-uniform spatial distribution. The spin gradient flow will generate an out-of-plane effective field on the magnetic free layer 20. At this time, the generated out-of-plane effective field will interact with the magnetic moment of the magnetic free layer 20. By controlling the magnitude and direction of the injected pulse, the magnitude and direction of the out-of-plane effective field can be precisely controlled. Furthermore, based on the relative magnitudes and directions of the out-of-plane effective field acting on the magnetic free layer and the dipole field generated by the magnetic reference layer, the magnetization state of the magnetic free layer 20 is regulated, so that the magnetic free layer can be switched between a first magnetization state and a second magnetization state from any initial magnetization state, and the probability of switching to any one of the magnetization states between the first magnetization state and the second magnetization state is regulated.

[0036] According to an embodiment of the present disclosure, the present disclosure realizes continuous regulation of the magnetization state switching probability from 0 to 100% by introducing an asymmetric electrode shape and adjusting the magnitude and direction of a single-pulse current. Compared with the patterned electrode that requires synchronous double pulses or multi-pulses to achieve a switching probability of 0 to 100%, this embodiment simplifies the circuit design and timing control and has a high integration degree.

[0037] Figure 2 A top view of the spin conversion layer according to an embodiment of the present disclosure is schematically shown.

[0038] As Figure 2As shown, the asymmetric electrode structure may include a to h, but is not limited thereto, and can be selected as needed. Due to the edge effect and geometric shape of the asymmetric-shaped electrode, the electric field will not be evenly distributed, resulting in different current densities at different positions depending on the electrode shape. By designing the shape of the asymmetric electrode and controlling the magnitude and direction of the injected pulse, the magnitude and direction of the out-of-plane effective field acting on the magnetic free layer can be regulated. Among them, when the pulse passes through the asymmetric electrode, an in-plane current gradient will be generated near the magnetic tunneling junction MTJ, and an in-plane spin gradient flow will be generated through the conversion of the spin conversion layer 10, thereby generating an out-of-plane effective field acting on the magnetic free layer 20.

[0039] Based on the above embodiments, the magnetic free layer is configured to generate an out-of-plane effective field acting on the magnetic free layer according to the in-plane spin gradient flow. By controlling the in-plane spin gradient flow, the magnitude and direction of the out-of-plane effective field of the magnetic free layer can be regulated.

[0040] In the embodiments of the present disclosure, based on the spin Hall effect of the bottom electrode material itself, the injected pulse is converted into in-plane spin polarization through the spin conversion layer 10, which is used to drive the efficient and rapid switching of the magnetization state of the magnetic free layer 20, and at the same time provides the possibility for the random switching of the magnetization state. Among them, when the in-plane spin polarization diffuses to the magnetic free layer 20, through the spin-orbit coupling effect, an in-plane spin-orbit torque is generated on the magnetic moment of the magnetic free layer 20, which is equivalent to generating an in-plane torque on the magnetic moment, causing the magnetic moment to deflect in the in-plane direction. Since the magnetic moment of the magnetic free layer 20 is subject to perpendicular (out-of-plane) magnetic anisotropy, and the energies of the first magnetization state and the second magnetization state (magnetic moment upward and magnetic moment downward) are degenerate, the in-plane spin-orbit torque itself cannot break this energy degenerate state. Therefore, when the vector sum of the out-of-plane effective field and the dipole field is zero or relatively small, the magnetic moment of the magnetic free layer 20 shows random switching after the application of the current pulse.

[0041] Furthermore, by adjusting the electrode shape and current direction, the distribution of the spin gradient flow can be controlled. Since the spin gradient flow results in non-uniform spatial distribution of the spin-orbit torque, breaking the energy degenerate state of the perpendicular magnetic moment, it is equivalent to generating an additional out-of-plane effective field in the magnetic free layer 20.

[0042] Figure 3 Schematically shows a schematic diagram of the magnetic hysteresis loop of the magnetic free layer in the case of no injected pulse according to the embodiments of the present disclosure.

[0043] As Figure 3 and Figure 1 shown, this embodiment further includes: a magnetic reference layer 40, disposed on the surface of the magnetic free layer 20 away from the spin conversion layer 10;

[0044] Among them, in the case of no injected pulse, under the action of the dipole field of the magnetic reference layer 40, the bias field of the magnetic free layer 20 biases towards the first direction.

[0045] In an embodiment of the present disclosure, when no current flows through the asymmetric bottom electrode layer 10, due to the dipole field H of the upper magnetic reference layer 40 dipole acting, there is a bias field H for the magnetic free layer 20 biasing towards the first direction offset (i.e., the center position of the hysteresis loop is not equal to zero). Since the bias field H offset is less than the coercive field H of the magnetic free layer 20 c , in the case of an external magnetic field being zero, both magnetization states are allowed (310).

[0046] Figure 4 Schematically shows a schematic diagram of the hysteresis loop of the magnetic free layer when the pulse is the first pulse according to an embodiment of the present disclosure.

[0047] Figure 5 Schematically shows a schematic diagram of the hysteresis loop of the magnetic free layer when the pulse is the second pulse according to an embodiment of the present disclosure.

[0048] Based on the above embodiments, the magnetic free layer 20 is configured to: in the case of injecting a pulse into the spin conversion layer, control the direction and magnitude of the pulse to regulate the out-of-plane effective field.

[0049] Under the action of the out-of-plane effective field and the dipole field, regulate the bias field to bias towards the first direction or the second direction, where the first direction and the second direction are opposite.

[0050] In an embodiment of the present disclosure, as Figure 4 shown, in the case of the pulse being the first pulse, when a current flows through the asymmetric bottom electrode layer 10, the spin current gradient generates an out-of-plane effective field H for the magnetic free layer 20 eff . By setting the current direction and the bottom electrode shape, the direction of the out-of-plane effective field H generated by the spin current gradient eff can be made opposite to the direction of the dipole field H dipole . Since the out-of-plane effective field H eff has a relationship of first increasing and then decreasing with the current magnitude, when the current reaches a certain magnitude (the first pulse interval), the out-of-plane effective field H eff can overcome the action of the dipole field H dipole , and the bias field H offset will be biased towards the second direction opposite to the first direction. At the same time, due to the Joule heat generated by the pulse making the coercive force H of the magnetic free layer 20 cIt decreases. At this time, when the external magnetic field is zero, only the first magnetization state is allowed (410). Therefore, the first pulse can switch the magnetic free layer to the first magnetization state under any initial magnetization state. Here, the abscissa is the intensity of the external magnetic field applied in the vertical direction, and the ordinate is the magnetization intensity of the magnetic free layer.

[0051] As Figure 5 shown, when the pulse is the second pulse, when the current flowing through the bottom electrode layer 10 further increases, due to the influence of Joule heat J increasing with the square of the current, the device temperature rises, causing the coercive field H of the magnetic free layer 20 to c decrease sharply. At the same time, as the local temperature rises, the saturation magnetization M of the magnetic free layer 20 S decreases, corresponding to the effective field H generated by the current eff decreasing instead. At this time, the influence of Joule heat on the magnetic free layer 20 dominates. Its hysteresis loop is re-biased in the first direction under the action of the bias field H offset . At this time, when the external magnetic field is zero, only the second magnetization state is allowed (510). Therefore, the second pulse can switch the magnetic free layer 20 to the second magnetization state under any initial magnetization state.

[0052] Furthermore, when the pulse is the third pulse, the magnetic free layer 20 is simultaneously affected by the dipole field H dipole , the effective field H generated by the spin gradient flow eff , and Joule heat J. The relative magnitudes of the latter two are controlled by the magnitude of the third pulse. Therefore, by changing the magnitude of the third pulse, under the random fluctuations of the environmental thermal perturbation field H thermal , the regulation of the magnetization switching probability from 0 to 100% can be achieved.

[0053] Among them, the first pulse is smaller than the third pulse, and the second pulse is larger than the third pulse. Figure 6 Schematically shows a schematic diagram of the relationship between the switching probability and the pulse magnitude according to an embodiment of the present disclosure.

[0054] As Figure 6 shown, it is the switching probability P AP of the high-resistance state (AP state). The first pulse in the 610 interval can switch the magnetic free layer to the first magnetization state under any initial magnetization state.

[0055] The second pulse in the 620 interval can switch the magnetic free layer to the second magnetization state under any initial magnetization state.

[0056] The third pulse in the 630 interval can switch the magnetic free layer to a certain specific magnetization state with a preset probability (between 0 and 100%) under any initial magnetization state. Among them, the switching probability of the low-resistance state (P state) can be obtained by calculating.

[0057] Figure 7 Schematically shows a schematic diagram of the flow directions of the first pulse, second pulse, and third pulse according to an embodiment of the present disclosure.

[0058] As Figure 7 shown, the third pulse current flows through the bottom electrode layer 10. Under the condition that the initial magnetization direction is arbitrary, by changing the magnitude of the third pulse, the probability of the magnetic free layer 20 switching to any one of the first magnetization state and the second magnetization state is regulated.

[0059] Furthermore, the asymmetric electrode spin probability bit further includes: an orbital Hall layer for enhancing the spin conversion efficiency.

[0060] The orbital Hall layer is disposed on the first surface or the second surface of the spin conversion layer 10 and is used to convert the injected pulse into an orbital current, and the orbital current is converted into a spin current through the atoms in the spin conversion layer 10 and / or the atoms in the magnetic free layer 20 to enhance the spin conversion efficiency.

[0061] Wherein, the first surface is opposite to the second surface, and the magnetic free layer 20 is disposed on the first surface.

[0062] According to an embodiment of the present disclosure, the material of the orbital Hall layer includes at least one of Ir, Mo, W, Cu, Cr, Ti, V, Mn.

[0063] According to an embodiment of the present disclosure, the material of the spin conversion layer 10 includes at least one of transition metals, rare earth elements, alloys of transition metals and rare earth elements, half-metals, topological insulators, binary transition metal compounds (TMX2).

[0064] Furthermore, the material of the spin conversion layer 10 includes transition metals and rare earth elements (transition metal elements Pt, Ir, W, Ta, Hf, Zr, Mo, Ru, Rh, Pd, Cd, Ti, V, Cr, Mn, Zn, rare earth elements La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu) and their alloys, half-metals (Mn3Pt, Mn3Pd, Mn3Sn, Mn3Ge, FeGe, FeSn, Fe3Sn2, Co3Sn2S2, TbMn6Sn6), topological insulators (BiSb, BiSe, BiSbTe), TMX2 materials (TM = Ti, V, Cr, Mn, Cu, Zn, Zr, Nb, Mo, Ru, Rh, Pd, Cd, Hf, Ta, W, Re, Os, Ir, Pt; X = O, S, Se, Te) and materials with similar structures (TaIrTe4, NbIrTe4), etc., or alloys or multi-layer heterostructures composed of the above materials.

[0065] The material of the magnetic free layer 20 includes: at least one layer of magnetic material, which can be a ferromagnetic material (such as Fe, Co, Ni, CoFe, CoFeB, Co3Sn2S2, Fe3Sn2, two-dimensional FeGeTe, two-dimensional FeGaTe, etc.), a ferrimagnetic material (such as CoGd, CoTb, CoDy, CoHo, GdFeCo, FeTb, TbMn6Sn6, etc.), an antiferromagnetic material (such as IrMn3, PtMn, Mn3Pt, Mn3Pd, Mn3Sn, Mn3Ge, FeGe, FeSn, RuO2, two-dimensional TaCoTe2, etc.), or an alloy of the above magnetic materials and 4f rare earth elements, other transition metal elements, etc., and has perpendicular magnetic anisotropy.

[0066] The material of the magnetic reference layer 40 includes: at least one layer of magnetic material, which can be a ferromagnetic material (such as Fe, Co, Ni, CoFe, CoFeB, Fe3Sn2, two-dimensional FeGeTe, two-dimensional FeGaTe, etc.), a ferrimagnetic material (such as CoGd, CoTb, CoDy, CoHo, GdFeCo, FeTb, TbMn6Sn6, etc.), an antiferromagnetic material (such as IrMn3, PtMn, Mn3Pt, Mn3Pd, Mn3Sn, Mn3Ge, FeGe, FeSn, RuO2, two-dimensional TaCoTe2, etc.), and has perpendicular magnetic anisotropy.

[0067] The material of the magnetic reference layer 40 can also include at least one layer of antiferromagnetic layer (such as IrMn3, PtMn, Mn3Pt, Mn3Pd, Mn3Sn, Mn3Ge, FeGe, FeSn, RuO2, two-dimensional TaCoTe2, etc.) or artificial antiferromagnetic layer (such as Co / metal spacer / Co and other artificial antiferromagnetic multi-layer film structures) for pinning the magnetization direction of the magnetic material in the above magnetic reference layer.

[0068] Furthermore, the asymmetric electrode spin probability bit device further includes:

[0069] A spacer layer 30, disposed between the spin conversion layer 10 and the magnetic free layer 20.

[0070] A top electrode layer 50, disposed on the surface of the magnetic reference layer 40 away from the spacer layer 30 and used as an electrode.

[0071] Among them, the material of the spacer layer 30 includes: a non-magnetic material having a semiconductor or insulator band gap, including at least one of materials such as AlO x 、MgO、TiO2、BN、GaSe、InSe、WSe2、WS2、MoTe2、MoSe2, etc.

[0072] The material of the top electrode layer 50 includes a metal with good conductivity, such as one of Al, Cu, Ag, Au, Pt, and Ti.

[0073] Further, it also includes generating a non-zero out-of-plane dipole field H for the magnetic free layer 20 by adjusting the thicknesses of the spacer layer 30 and the magnetic reference layer 40 dipole , which is manifested as a non-zero bias field H of the magnetic hysteresis loop of the magnetic free layer under zero current. offset Not zero.

[0074] Further, the present disclosure provides a control method for an asymmetric electrode spin probability bit device, including:

[0075] Based on the asymmetric electric field formed by the asymmetric electrodes of the spin conversion layer, regulating the pulse magnitude and pulse direction injected into the spin conversion layer to control the generated in-plane spin gradient flow.

[0076] According to the in-plane spin gradient flow, regulating the magnitude and direction of the out-of-plane effective field received by the magnetic free layer in the spin probability bit, so that the magnetization state of the magnetic free layer can be switched between a first magnetization state and a second magnetization state, and regulating the probability of switching to any magnetization state between the first magnetization state and the second magnetization state, where the magnetization directions of the first magnetization state and the second magnetization state are opposite.

[0077] In the embodiments of the present disclosure, this method can effectively improve the integration density of the SOT probability bit circuit; it does not require synchronous / asynchronous double pulses or multi-pulses for control, reducing the complexity in circuit and timing control, simplifying the control circuit, and being more friendly to circuit design. The principle of this control method is the same as that of the above-mentioned asymmetric electrode spin probability bit, and will not be elaborated here.

[0078] According to the embodiments of the present disclosure, when the pulse is the first pulse, the magnetic free layer is switched from an arbitrary initial magnetization state to the first magnetization state.

[0079] When the pulse is the second pulse, the magnetic free layer is switched from an arbitrary initial magnetization state to the second magnetization state.

[0080] When the pulse is the third pulse, by regulating the magnitude of the third pulse, the probability that the magnetic free layer is switched from an arbitrary initial magnetization state to any magnetization state between the first magnetization state and the second magnetization state is regulated.

[0081] Among them, the amplitude of the first pulse is less than the amplitude of the third pulse, and the amplitude of the third pulse is less than the amplitude of the second pulse.

[0082] Figure 8 Schematically shows a schematic diagram of the fourth pulse flow direction according to the embodiments of the present disclosure.

[0083] AsFigure 8 As shown, the reading method includes: injecting a fourth pulse into the top electrode layer 50 of the spin-orbit torque probabilistic bit, and reading the magnetoresistance of the spin-orbit torque probabilistic bit by measuring the magnetoresistance state of the tunnel junction.

[0084] Among them, the magnetoresistance state includes:

[0085] The first resistance state, i.e., the low-resistance state R P , is used to characterize that the magnetization states of the magnetic free layer and the magnetic reference layer are arranged in parallel (P).

[0086] The second resistance state, i.e., the high-resistance state R AP , is used to characterize that the magnetization states of the magnetic free layer and the magnetic reference layer are arranged in anti-parallel (AP).

[0087] Furthermore, the embodiments of the present disclosure provide a current pulse application module for providing current pulses, where this module can be a transistor.

[0088] Those skilled in the art can understand that the features described in the various embodiments and / or claims of the present disclosure can be combined and / or combined in various ways, even if such combinations or combinations are not explicitly described in the present disclosure. In particular, without departing from the spirit and teachings of the present disclosure, the features described in the various embodiments and / or claims of the present disclosure can be combined and / or combined in various ways. All such combinations and / or combinations fall within the scope of the present disclosure.

[0089] The above describes the embodiments of the present disclosure. However, these embodiments are only for illustrative purposes and not for limiting the scope of the present disclosure. Although the embodiments are described separately above, this does not mean that the measures in each embodiment cannot be used advantageously in combination. The scope of the present disclosure is defined by the appended claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art can make various substitutions and modifications, and all these substitutions and modifications should fall within the scope of the present disclosure.

Claims

1. An asymmetric electrode spin probability qubit device, characterized in that Comprising: A spin conversion layer, which is set as an asymmetric electrode structure and is configured to convert the injected pulse into an in-plane spin gradient flow under the action of the asymmetric electric field formed by the asymmetric electrode structure; And A magnetic free layer, which is disposed on the surface of the spin conversion layer; Wherein, the in-plane spin gradient flow is regulated based on the magnitude and direction of the injected pulse to control the magnitude and direction of the out-of-plane effective field received by the magnetic free layer; according to the out-of-plane effective field, the magnetization state of the magnetic free layer is switched between a first magnetization state and a second magnetization state in any initial magnetization state, and the probability of switching to any one of the magnetization states between the first magnetization state and the second magnetization state is regulated, and the magnetization directions of the first magnetization state and the second magnetization state are opposite.

2. The asymmetric electrode spin probability qubit device according to claim 1, wherein The magnetic free layer is configured to: generate an out-of-plane effective field acting on the magnetic free layer according to the in-plane spin gradient flow.

3. The asymmetric electrode spin probability qubit device according to claim 1, characterized in that Further comprising: A magnetic reference layer, which is disposed on the surface of the magnetic free layer away from the spin conversion layer; Wherein, in the case where the pulse is not injected, under the action of the dipole field of the magnetic reference layer, the bias field of the magnetic free layer biases towards a first direction.

4. The asymmetric electrode spin probability qubit device according to claim 3, characterized in that The magnetic free layer is further configured to: In the case of injecting the pulse into the spin conversion layer, regulate the out-of-plane effective field by controlling the direction and magnitude of the pulse; Under the action of the out-of-plane effective field and the dipole field, regulate the bias field to bias towards a first direction or a second direction, wherein the first direction and the second direction are opposite.

5. The asymmetric electrode spin probability qubit device according to claim 1, characterized in that Further comprising: An orbital Hall layer, which is disposed on the first surface or the second surface of the spin conversion layer and is used to convert the injected pulse into an orbital current, and the orbital current is converted into a spin current through the atoms in the spin conversion layer and / or the atoms in the magnetic free layer; Wherein, the first surface is opposite to the second surface, and the magnetic free layer is disposed on the first surface.

6. The asymmetric electrode spin probability qubit device according to claim 5, characterized in that The material of the orbital Hall layer includes at least one of Ir, Mo, W, Cu, Cr, Ti, V, and Mn.

7. The asymmetric electrode spin probability qubit device according to claim 1, characterized in that, The material of the spin conversion layer includes at least one of transition metals, rare earth elements, alloys of transition metals and rare earth elements, half-metals, topological insulators, and binary transition metal compounds.

8. A control method for an asymmetric electrode spin probability qubit device, characterized in that, Comprising: Based on the asymmetric electric field formed by the asymmetric electrode of the spin conversion layer, regulating the magnitude and direction of the pulse injected into the spin conversion layer to control the generated in-plane spin gradient flow; According to the in-plane spin gradient flow, regulating the magnitude and direction of the out-of-plane effective field received by the magnetic free layer in the spin probability qubit, so that the magnetization state of the magnetic free layer is switched between a first magnetization state and a second magnetization state, and regulating the probability of switching to any one of the magnetization states between the first magnetization state and the second magnetization state, and the magnetization directions of the first magnetization state and the second magnetization state are opposite.

9. The method according to claim 8, characterized in that, In the case where the pulse is a first pulse, switching the magnetic free layer from any initial magnetization state to the first magnetization state; In the case where the pulse is a second pulse, switching the magnetic free layer from any initial magnetization state to the second magnetization state; When the pulse is the third pulse, the probability that the magnetic free layer is switched from any initial magnetization state to any magnetization state between the first magnetization state and the second magnetization state is regulated by regulating the magnitude of the third pulse; Among them, the amplitude of the first pulse is less than the amplitude of the third pulse, and the amplitude of the third pulse is less than the amplitude of the second pulse.

10. The method according to claim 8, characterized in that It also includes: Injecting a fourth pulse into the spin-orbit torque probability bit, and reading the magnetoresistance of the spin-orbit torque probability bit by measuring the magnetoresistance state of the tunnel junction; Among them, the magnetoresistance state includes: The first resistance state, which is used to characterize that the magnetization states of the magnetic free layer and the magnetic reference layer are arranged in parallel; The second resistance state, which is used to characterize that the magnetization states of the magnetic free layer and the magnetic reference layer are arranged in antiparallel.

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