A WS-Ti-O lubricating film and its preparation method and application

Abstract

The present invention provides a W-S-Ti-O lubricating film and its preparation method and application, which belongs to the field of space lubrication technology. The present invention provides a W-S-Ti-O lubricating film, which has a dense amorphous structure and is composed of WS2 phase, WS x O y The present invention introduces Ti and O elements into the WS2-based film to inhibit the growth of WS2 crystals, thereby forming a W-S-Ti-O lubricating film with an amorphous dense structure, which has good vacuum tribological properties and resistance to space radiation, especially atomic oxygen corrosion. The results of the embodiment show that the W-S-Ti-O lubricating film prepared by the present invention exhibits good resistance to atomic oxygen radiation after being exposed to the environment of the windward surface outside the space station for 6 months. The vacuum friction coefficient of the film after irradiation is 0.03, and the lubrication life is higher than 4.0×10 5 r.

Description

Technical Field

[0001] The present invention relates to the technical field of space lubrication, and in particular to a WS-Ti-O lubricating film and a preparation method and application thereof. Background Art

[0002] In spacecraft used in space science and applications, lubricants are one of the core building blocks for ensuring the long life and highly reliable operation of mechanical moving parts. Due to the unique characteristics of the space environment (such as high vacuum, extreme temperature fluctuations, and strong radiation), traditional liquid lubricants are prone to volatility or failure. Therefore, solid lubricant films with low friction coefficients and high chemical stability have become a key technology in the field of space lubrication. Among them, transition metal dichalcogenides (TMDs, such as MoS2 and WS2), due to their layered structure and excellent vacuum lubrication properties, are widely used for surface lubrication and protection of key components such as satellite bearings and solar wing deployment mechanisms.

[0003] However, the performance degradation of lubricating films on spacecraft under space radiation environment (especially atomic oxygen erosion) is becoming increasingly prominent. In low Earth orbit (LEO, altitude 200-700 km), the flux of high-energy atomic oxygen (formed by the decomposition of oxygen molecules by solar ultraviolet radiation) is as high as 10 14 ~10 15 atoms / (cm²·s). Its strong oxidizing properties react with TMDs films, leading to oxidation and loss of surface sulfur and destruction of the layered structure, significantly reducing the film's lubricity and wear life. Studies have shown that exposure to atomic oxygen can cause the friction coefficient of MoS2 films to rise sharply from an initial value of 0.02-0.05 to over 0.2, significantly shortening their wear life.

[0004] Although attempts have been made to enhance the radiation resistance of TMDs films through metal doping (such as titanium and gold) and multilayer structural design, their resistance to atomic oxygen remains significantly insufficient. For example, while doping can partially inhibit oxidation reactions, it can compromise the film's intrinsic lubricity. Therefore, developing TMDs-based space lubricating films that combine excellent lubricity with high resistance to atomic oxygen corrosion has become a crucial requirement for overcoming the technical bottleneck of long-life aerospace equipment and ensuring the reliability of space missions in challenging space environments. Summary of the Invention

[0005] In view of this, the object of the present invention is to provide a WS-Ti-O lubricating film and its preparation method and application. The WS-Ti-O lubricating film of the present invention has good vacuum tribological properties and resistance to space radiation, especially atomic oxygen corrosion.

[0006] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

[0007] The present invention provides a WS-Ti-O lubricating film, wherein the WS-Ti-O lubricating film has a dense amorphous structure and is composed of WS2 phase, WS x O y Phase and TiO2 phase, 0<x<2, 0<y<3, x is WS x O y The atomic content ratio of S to W in the phase, y is WS x O y The atomic content ratio of O to W in the phase, the content of O element in the WS-Ti-O lubricating film is 25-50 at.%, the content of Ti element is 2-8 at.%, and the atomic content ratio of S element to W element is 1.3-1.6:1.

[0008] Preferably, the content of O element in the WS-Ti-O lubricating film is 30.2-45 at.%, the content of Ti element is 3-7 at.%, and the atomic content ratio of S element to W element is 1.33-1.5:1.

[0009] Preferably, the thickness of the WS-Ti-O lubricating film is 1-3 μm.

[0010] The present invention also provides a method for preparing the WS-Ti-O lubricating film described in the above technical solution, comprising the following steps:

[0011] performing ion bombardment on the substrate to obtain a pretreated substrate;

[0012] The WS2 target material and the Ti-containing target material are used, and a mixed gas of Ar and O2 is used as the working gas. The pretreated substrate is deposited and coated by a magnetron sputtering method to obtain the WS-Ti-O lubricating film.

[0013] Preferably, during the deposition coating process, the WS2 target and the Ti-containing target are co-sputtered, and the number of WS2 targets used in the co-sputtering is 2 pieces, and the number of the Ti-containing target is 1 piece.

[0014] Preferably, the co-sputtering conditions include: the vertical distance between the WS2 target and the Ti-containing target and the surface of the pretreated substrate is independently 100-200 mm, the pressure of the working gas is 1.0-2.0 Pa, the flow ratio of O2 to Ar is (0.02-0.08):1, and the sputtering power density of the WS2 target is 2-4 W / cm 2 The sputtering power density of Ti-containing targets is 0.5~1.2W / cm 2 , bias voltage is -10~-60V, and deposition time is 60~120min.

[0015] Preferably, the Ti-containing target is a Ti target or a TiO2 target.

[0016] Preferably, the working gas for the ion bombardment is argon, the pressure of the working gas is 1.0-3.0 Pa, the voltage is -500-800 V, and the time is 15-30 min.

[0017] Preferably, the substrate is made of stainless steel or titanium alloy.

[0018] The present invention also provides the use of the WS-Ti-O lubricating film described in the above technical solution or the WS-Ti-O lubricating film prepared by the preparation method described in the above technical solution in the field of space atomic oxygen irradiation resistance lubrication.

[0019] The present invention provides a WS-Ti-O lubricating film, wherein the WS-Ti-O lubricating film has a dense amorphous structure and is composed of WS2 phase, WS x O y Phase and TiO2 phase, 0<x<2, 0<y<3, x is WS x O y The atomic content ratio of S to W in the phase, y is WS x O y The atomic content ratio of O to W in the phase, the content of O element in the WS-Ti-O lubricating film is 25-50 at.%, the content of Ti element is 2-8 at.%, and the atomic content ratio of S element to W element is 1.3-1.6:1.

[0020] Compared with the prior art, the present invention has the following beneficial effects:

[0021] The present invention introduces Ti and O elements into the WS2-based film to inhibit the growth of WS2 crystals, thereby forming a WS-Ti-O lubricating film with an amorphous and dense structure. This film exhibits excellent vacuum tribological properties and resistance to space radiation, especially atomic oxygen corrosion. The results of the examples show that after six months of exposure to the windward surface of the space station, the WS-Ti-O lubricating film prepared by the present invention exhibits excellent resistance to atomic oxygen radiation. The vacuum friction coefficient of the film after irradiation is 0.03, and the lubrication life is greater than 4.0×10 5 r.

[0022] The present invention also provides a method for preparing the WS-Ti-O lubricating film described in the above technical solution. The present invention adopts WS2 target material and Ti-containing target material, uses a mixed gas of Ar and O2 as the working gas, and introduces Ti and O elements into the WS2-based film by magnetron sputtering to inhibit the growth of WS2 crystals, thereby forming a WS-Ti-O lubricating film with an amorphous dense structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a field emission scanning electron microscope image of the cross section of the WS-Ti-O lubricating film prepared in Example 1;

[0024] Figure 2 This is the XPS spectrum of the W element in the WS-Ti-O lubricating film prepared in Example 1. Figure 2 The circles in the figure represent the measured values, and the curve is fitted based on the measured values;

[0025] Figure 3 This is the XPS spectrum of the Ti element in the WS-Ti-O lubricating film prepared in Example 1. Figure 3 The circles in the figure represent the measured values, and the curve is fitted based on the measured values;

[0026] Figure 4 This is a comparison chart of the vacuum tribological properties of the WS-Ti-O lubricating film prepared in Example 1 and the pure WS2 lubricating film prepared in Comparative Example 1;

[0027] Figure 5 This is the SEM morphology of the WS-Ti-O lubricating film prepared in Example 2;

[0028] Figure 6 This is the EDS spectrum of the WS-Ti-O lubricating film prepared in Example 2;

[0029] Figure 7 This is the vacuum friction test curve of the WS-Ti-O lubricating film prepared in Example 2;

[0030] Figure 8 This is the vacuum friction test curve of the WS-Ti-O lubricating film prepared in Example 1 after being exposed to the windward surface outside the space station cabin for 6 months. DETAILED DESCRIPTION

[0031] The present invention provides a WS-Ti-O lubricating film, wherein the WS-Ti-O lubricating film has a dense amorphous structure and is composed of WS2 phase, WS x O y Phase and TiO2 phase, 0<x<2, 0<y<3, x is WS x O y The atomic content ratio of S to W in the phase, y is WS x O y The atomic content ratio of O to W in the phase, the content of O element in the WS-Ti-O lubricating film is 25-50 at.%, the content of Ti element is 2-8 at.%, and the atomic content ratio of S element to W element is 1.3-1.6:1.

[0032] In the present invention, the content of O element in the WS-Ti-O lubricating film is 25~50at.%, specifically 25at.%, 30.2at.%, 35at.%, 40at.%, 45at.% or 50at.%, the content of Ti element is 2~8at.%, specifically 2at.%, 3at.%, 4at.%, 5.1at.%, 6at.%, 7at.% or 8at.%, and the atomic content ratio of S element to W element is 1.3~1.6:1, specifically 1.3:1, 1.33:1, 1.4:1, 1.5:1 or 1.6:1. The present invention introduces Ti and O elements into the WS2-based film to inhibit the growth of WS2 crystals, thereby forming a WS-Ti-O lubricating film with an amorphous dense structure, which has good vacuum tribological properties and resistance to space radiation, especially atomic oxygen corrosion.

[0033] In the present invention, the thickness of the WS-Ti-O lubricating film is preferably 1-3 μm, specifically 1, 1.2, 1.34, 1.8, 2, 2.5 or 3 μm.

[0034] The vacuum friction coefficient of the WS-Ti-O lubricating film of the present invention is as low as 0.02, and the wear life is greater than 5.0×10 5 After six months of exposure to environmental radiation on the windward side of the space station, the vacuum friction coefficient was as low as 0.03, and the lubrication life was higher than 4.0×10 5 r.

[0035] The present invention also provides a method for preparing the WS-Ti-O lubricating film described in the above technical solution, comprising the following steps:

[0036] performing ion bombardment on the substrate to obtain a pretreated substrate;

[0037] The WS2 target material and the Ti-containing target material are used, and a mixed gas of Ar and O2 is used as the working gas. The pretreated substrate is deposited and coated by a magnetron sputtering method to obtain the WS-Ti-O lubricating film.

[0038] In the present invention, unless otherwise specified, the raw materials used are commercially available products in the art.

[0039] The present invention performs ion bombardment on a substrate to obtain a pretreated substrate.

[0040] In the present invention, the working gas for the ion bombardment is preferably argon, the gas pressure of the working gas is preferably 1.0~3.0Pa, specifically 1.0, 1.5, 2.0, 2.5 or 3.0Pa, the voltage is preferably -500~-800V, specifically -500, -600, -700 or -800V, the time is preferably 15~30min, specifically 15, 18, 20, 25 or 30min, and controlling the parameters of the ion bombardment within the above range can effectively remove the adsorbed pollutants on the surface of the substrate.

[0041] In the present invention, the ion bombardment process preferably includes: placing the substrate on a workpiece holder in a vacuum chamber, adjusting the distance between the substrate and the sputtering target, and evacuating the chamber to a background vacuum of ≤1.0×10 -3 Pa, then fill with argon, start the workpiece holder to rotate, and perform Ar ion bombardment treatment. In the present invention, the rotation speed of the workpiece holder in the vacuum chamber is preferably 1.0-2.0 r / min.

[0042] In the present invention, the material of the substrate is preferably stainless steel or titanium alloy. The present invention has no particular limitation on the specific composition of the stainless steel or titanium alloy, and any stainless steel or titanium alloy composition well known to those skilled in the art can be used. In a specific embodiment of the present invention, the material of the substrate is 9Cr18 steel.

[0043] In the present invention, before the substrate is subjected to ion bombardment, the substrate is preferably cleaned and dried in sequence; the cleaning is preferably performed by placing the substrate in acetone and anhydrous ethanol in sequence for ultrasonic cleaning, and the ultrasonic cleaning time in the acetone and anhydrous ethanol is preferably 15 minutes; the acetone is preferably analytical grade acetone; the present invention does not have any special restrictions on the frequency of the ultrasonic cleaning, and the frequency familiar to those skilled in the art can be used. In the present invention, the drying method is preferably baking, and the present invention does not have any special restrictions on the drying process, and the process familiar to those skilled in the art can be used. In an embodiment of the present invention, the drying is specifically performed in an infrared oven.

[0044] After obtaining the pretreated substrate, the present invention adopts WS2 target material and Ti-containing target material, uses a mixed gas of Ar and O2 as working gas, and deposits and coats the pretreated substrate by magnetron sputtering to obtain the WS-Ti-O lubricating film.

[0045] In the present invention, during the deposition process, the WS2 target and the Ti-containing target are preferably co-sputtered (i.e., the WS2 target and the Ti-containing target are sputtered simultaneously). The number of WS2 targets used in the co-sputtering is preferably two, and the number of the Ti-containing target is preferably one, which can effectively control the content of Ti and O elements in the WS-Ti-O lubricating film. In a specific embodiment of the present invention, the WS-Ti-O lubricating film is prepared by simultaneously sputtering the two WS2 targets and the one Ti-containing target using an RF power supply connected to two WS2 targets and a DC pulse power supply connected to one Ti target, or using an RF power supply connected to a TiO2 target. The WS2 target and the Ti-containing target are preferably both rectangular targets measuring 400 mm x 100 mm, and the thickness of each rectangular target is preferably 4 to 8 mm.

[0046] In the present invention, the co-sputtering conditions preferably include: the vertical distances between the WS2 target and the Ti-containing target and the surface of the pretreated substrate are independently 100-200 mm, specifically 100, 110, 160 or 200 mm, the working gas pressure is 1.0-2.0 Pa, specifically 1.0, 1.2, 1.8 or 2.0 Pa, the flow ratio of O2 to Ar is (0.02-0.08):1, specifically 0.02:1, 0.03:1, 0.06:1 or 0.08:1, and the sputtering power density of the WS2 target is 2-4 W / cm 2 , specifically 2, 2.4, 2.5, 3, 3.2 or 4 W / cm 2 The sputtering power density of Ti-containing targets is 0.5~1.2W / cm 2 , specifically 0.5, 0.6, 0.75, 0.9 or 1.2 W / cm 2 , the bias voltage is -10~-60V, specifically -10, -20, -30, -40, -50 or -60V, the deposition time is 60~120min, specifically 60, 70, 80, 100 or 120min. By controlling the co-sputtering conditions within the above range, a lubricating film with controllable thickness suitable for use in precision moving parts in space can be obtained.

[0047] In the present invention, the Ti-containing target is preferably a Ti target or a TiO2 target.

[0048] The present invention also provides the use of the WS-Ti-O lubricating film described in the above technical solution or the WS-Ti-O lubricating film prepared by the preparation method described in the above technical solution in the field of space atomic oxygen irradiation resistance lubrication.

[0049] The present invention does not have any special limitation on the application method, and the application can be carried out using methods well known to those skilled in the art.

[0050] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions of the present invention. Obviously, the embodiments described are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0051] Example 1

[0052] 9Cr18 steel was ultrasonically cleaned in analytical grade acetone and anhydrous ethanol for 15 min each, dried in an infrared oven, and then placed on a vacuum chamber workpiece holder. The vertical distance between the substrate and the sputtering target surface was adjusted to 150 mm. The vacuum chamber was evacuated. When the background vacuum was better than 1.0×10 -3 After 0.04 Pa, argon was filled into the vacuum chamber with a pressure of 2.0 Pa, the workpiece holder was turned on to rotate at a speed of 1.5 r / min, the bias voltage was -600 V, and Ar ions were bombarded for 20 min.

[0053] Two WS2 targets and one Ti target were used for sputtering. Both targets were rectangular targets with a size of 400 mm × 100 mm and a thickness of 6.0 mm. The Ar and O2 flow rates were adjusted, the pressure was adjusted to 1.5 Pa, the oxygen to argon flow ratio was 0.08:1, the bias voltage was increased to -30 V, the RF sputtering power was turned on, and the sputtering power of the two WS2 targets was set to 1 kW (2.5 W / cm 2 ), turn on the DC pulse power supply, set the sputtering power of the Ti target to 200W (0.5W / cm 2 ), after 90 minutes of film deposition, sputtering was stopped to obtain a WS-Ti-O lubricating film (with a thickness of 1.8 μm, an O element content of 45 at.%, a Ti element content of 2.5 at.%, and an atomic content ratio of S element to W element of 1.4:1).

[0054] Example 2

[0055] 9Cr18 steel was ultrasonically cleaned in analytical grade acetone and anhydrous ethanol for 15 min each, dried in an infrared oven, and then placed on a vacuum chamber workpiece holder. The vertical distance between the substrate and the sputtering target surface was adjusted to 150 mm. The vacuum chamber was evacuated. When the background vacuum was better than 1.0×10 -3 After 1.0 Pa, argon was filled into the vacuum chamber with a pressure of 2.0 Pa, the workpiece holder was turned on to rotate at a speed of 2.0 r / min, the bias voltage was -600 V, and Ar ions were bombarded for 20 min.

[0056] Two WS2 targets and one TiO2 target were used for sputtering. Both targets were rectangular targets with a size of 400 mm × 100 mm and a thickness of 6.0 mm. The Ar and O2 flow rates were adjusted, the pressure was adjusted to 1.5 Pa, the flow ratio of oxygen to argon was 0.02:1, the bias voltage was increased to -30 V, the RF sputtering power was turned on, and the sputtering power of the two WS2 targets was set to 1 kW (2.5 W / cm 2 ), turn on the DC pulse power supply, and set the sputtering power of the Ti target to 300W (0.75W / cm 2 ), after 65 minutes of film deposition, sputtering was stopped to obtain a WS-Ti-O lubricating film (with a thickness of 1.34 μm, an O element content of 30.2 at.%, a Ti element content of 5.1 at.%, and an atomic content ratio of S element to W element of 1.33:1).

[0057] Comparative Example 1 Pure WS2 lubricating film

[0058] 9Cr18 steel was ultrasonically cleaned in analytical grade acetone and anhydrous ethanol for 15 min each, dried in an infrared oven, and then placed on a vacuum chamber workpiece holder. The vertical distance between the substrate and the sputtering target surface was adjusted to 150 mm. The vacuum chamber was evacuated. When the background vacuum was better than 1.0×10 -3 After Pa, argon was filled into the vacuum chamber with a pressure of 0.8 Pa, the workpiece holder was turned on to rotate at a speed of 1.5 r / min, the bias voltage was -600 V, and Ar ions were bombarded for 20 min.

[0059] The target materials used in sputtering are two WS2 targets, which are rectangular targets with a size of 400 mm × 100 mm and a thickness of 6.0 mm. The Ar gas flow rate is adjusted, the gas pressure is adjusted to 1.5 Pa, the bias voltage is increased to -30 V, the RF sputtering power is turned on, and the sputtering power of the two WS2 targets is set to 1 kW (2.5 W / cm 2 ), after 120 min of film deposition, sputtering was stopped to obtain a pure WS2 lubricating film (thickness of 1.5 μm).

[0060] Test Case

[0061] The WS-Ti-O lubricating film prepared in Example 1 and the pure WS2 lubricating film prepared in Comparative Example 1 were subjected to morphology, composition and tribological performance tests. The structure and performance of the film after the extravehicular irradiation test of Example 1 were also tested. The friction test was carried out in accordance with the GJB3032-97 standard, that is, the friction coefficient and wear life of the film were evaluated using a ball-disc friction test apparatus. The test conditions were: room temperature, a normal load of 5.00 N, a sample rotation speed of (1000 ± 2) r / min, and a 9Cr18 steel ball with a diameter of 8 mm. The test environment was vacuum (the vacuum degree was better than 1.0×10 -3Pa).

[0062] Test results

[0063] Figure 1 This is a field emission scanning electron microscope image of the cross section of the WS-Ti-O lubricating film prepared in Example 1. Figure 2 This is the XPS spectrum of the W element in the WS-Ti-O lubricating film prepared in Example 1. Figure 3 The XPS spectrum of Ti element in the WS-Ti-O lubricating film prepared in Example 1; Figures 1-3 It can be seen that the WS-Ti-O lubricating film prepared in Example 1 is a dense amorphous structure, and the film is mainly composed of WS2, WS x O y and TiO2 phase.

[0064] Figure 4 The vacuum tribological performance comparison chart of the WS-Ti-O lubricating film prepared in Example 1 and the pure WS2 lubricating film prepared in Comparative Example 1 shows that the vacuum average friction coefficient of the WS-Ti-O lubricating film prepared in Example 1 is 0.02, and the lubrication life is 8.0×10 5 r, friction coefficient and lubrication life are significantly higher than those of comparative example 1.

[0065] Figure 5 This is the SEM morphology of the WS-Ti-O lubricating film prepared in Example 2. Figure 6 This is the EDS spectrum of the WS-Ti-O lubricating film prepared in Example 2. Figure 7 The vacuum friction test curve of the WS-Ti-O lubricating film prepared in Example 2 shows that the WS-Ti-O lubricating film prepared in Example 2 has a dense amorphous structure, a thickness of 1.34 μm, an O element content of 30.2 at.%, and a Ti element content of 5.1 at.%. The average vacuum friction coefficient is less than 0.03, and the lubrication life is 8.0×10 5 r.

[0066] Figure 8 The vacuum friction test curve of the WS-Ti-O lubricating film prepared in Example 1 after being exposed to the windward surface of the space station for 6 months shows that the average friction coefficient of the WS-Ti-O lubricating film obtained in Example 1 after space atomic oxygen irradiation is 0.03, and the lubrication life is higher than 4.0×10 5 r.

[0067] The average friction coefficient of the WS-Ti-O lubricating film obtained in Example 2 after simulated space atomic oxygen irradiation is 0.03, and the lubrication life is higher than 4.0×10 5 r.

[0068] The above description is merely a preferred embodiment of the present invention and does not constitute any limitation thereto. It should be noted that those skilled in the art may make various improvements and modifications without departing from the principles of the present invention, and such improvements and modifications shall also be considered within the scope of protection of the present invention.

Claims

1. A WS-Ti-O lubricating film, characterized in that: The WS-Ti-O lubricating film has a dense amorphous structure consisting of WS2 phase, WS x O y Phase and TiO2 phase, 0<x<2, 0<y<3, x is WS x O y The atomic content ratio of S to W in the phase, y is WS x O y The atomic content ratio of O to W in the phase, the content of O element in the WS-Ti-O lubricating film is 25-50 at.%, the content of Ti element is 2-8 at.%, and the atomic content ratio of S element to W element is 1.3-1.6:

1.

2. The WS-Ti-O lubricating film according to claim 1, characterized in that The content of the O element in the WS-Ti-O lubricating film is 30.2-45 at.%, the content of the Ti element is 3-7 at.%, and the atomic content ratio of the S element to the W element is 1.33-1.5:

1.

3. The WS-Ti-O lubricating film according to claim 1, characterized in that The thickness of the WS-Ti-O lubricating film is 1-3 μm.

4. The method for preparing the WS-Ti-O lubricating film according to any one of claims 1 to 3, characterized in that: The following steps are involved: performing ion bombardment on the substrate to obtain a pretreated substrate; The WS2 target material and the Ti-containing target material are used, and a mixed gas of Ar and O2 is used as the working gas. The pretreated substrate is deposited and coated by a magnetron sputtering method to obtain the WS-Ti-O lubricating film.

5. The preparation method according to claim 4, characterized in that During the deposition coating process, the WS2 target and the Ti-containing target are co-sputtered. The number of WS2 targets used in the co-sputtering is 2, and the number of the Ti-containing target is 1.

6. The preparation method according to claim 5, characterized in that The co-sputtering conditions include: the vertical distance between the WS2 target and the Ti-containing target and the surface of the pretreated substrate is independently 100-200 mm, the pressure of the working gas is 1.0-2.0 Pa, the flow ratio of O2 to Ar is (0.02-0.08):1, and the sputtering power density of the WS2 target is 2-4 W / cm 2 The sputtering power density of Ti-containing targets is 0.5~1.2W / cm 2 , bias voltage is -10~-60V, and deposition time is 60~120min.

7. The preparation method according to claim 4 or 5, characterized in that The Ti-containing target is a Ti target or a TiO2 target.

8. The preparation method according to claim 4, characterized in that The working gas for the ion bombardment is argon, the pressure of the working gas is 1.0-3.0 Pa, the voltage is -500-800 V, and the time is 15-30 min.

9. The preparation method according to claim 4 or 8, characterized in that The material of the substrate is stainless steel or titanium alloy.

10. Use of the WS-Ti-O lubricating film according to any one of claims 1 to 3 or the WS-Ti-O lubricating film prepared by the preparation method according to any one of claims 4 to 9 in the field of space atomic oxygen irradiation-resistant lubrication.

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