Vacuum coating equipment for coating anti-fingerprint film and coating method

Abstract

The invention discloses vacuum coating equipment for coating an anti-fingerprint film and a coating method. The coating method comprises the following steps: performing plasma activation treatment on the surface of a glass substrate to form an activated substrate; a gradient transition layer is deposited on the surface of an activated substrate, a Cr-Si composite transition layer with continuously changing components is formed by alternately adjusting sputtering power of a metal target and a non-metal target, a fluorocarbon polymer main film layer is deposited on the transition layer substrate, and C4F8 gas is controlled by adopting a pulse magnetron sputtering process to generate an anti-fingerprint functional layer substrate with uniform thickness; stepwise in-situ annealing treatment is carried out, and a densified composite film layer structure is formed through segmented heating and heat preservation; performing plasma surface modification on the surface to form a low-surface-energy chemical group, and finishing functional treatment; through combination of a composite coating process and an intelligent control technology, cooperative regulation and control of anti-fingerprint film interface strengthening, function construction and structure optimization are realized in a single vacuum environment.

Description

Technical Field

[0001] The present invention relates to the technical field of vacuum coating, and in particular, to a vacuum coating device and a coating method for coating an anti-fingerprint film. Background Art

[0002] With the development of the consumer electronics industry towards high-end and curved surfaces, the glass covers of products such as smart phones and smart watches generally adopt 3D curved surface designs to improve the user experience. As the core functional layer for enhancing the anti-fouling and hydrophobic properties of the glass surface, the coating quality of the anti-fingerprint film directly affects the durability of the product appearance and the touch sensitivity. Especially in the complex curved surface area with a curvature radius of 2-10 mm, it is necessary to ensure the uniformity of the film thickness, wear resistance (≥5000 friction tests), and long-term stability (performance attenuation <10% in a humid and hot environment for 96 h), which poses a severe challenge to the existing vacuum coating process.

[0003] The current mainstream process for preparing anti-fingerprint films mostly uses magnetron sputtering to achieve hydrophobic functions by depositing fluorocarbon compounds on the substrate. A typical process is the "continuous sputtering-annealing" method, which forms an anti-fingerprint layer by sputtering with a single target and then improves the film density through constant-temperature annealing. However, such processes have significant defects in the treatment of curved substrates: the film thickness gradient difference exceeds 15% in the curved surface area due to uneven plasma distribution (when the curvature radius is 5 mm), and the bonding force between the film layer and the substrate interface is weak (only reaching level 2 in the cross-cut test), resulting in a rapid attenuation of the anti-fingerprint performance in the edge area. This technical bottleneck severely restricts the yield and service life of curved glass products.

[0004] In view of this, it is necessary to address the technical problems of uneven film thickness distribution and weak edge bonding force existing in the high-vacuum coating process of curved glass substrates in the prior art. Summary of the Invention

[0005] The purpose of the present invention is to provide a vacuum coating device and a coating method for coating an anti-fingerprint film to solve the above technical problems.

[0006] To achieve this purpose, the present invention adopts the following technical solutions: A vacuum coating method for coating an anti-fingerprint film includes: Performing plasma activation treatment on the surface of the glass substrate to generate an activation layer in a vacuum environment using a mixed gas of inert gas and reactive gas to form an activated substrate; Depositing a gradient transition layer on the surface of the activated substrate, and forming a Cr-Si composite transition layer with continuously changing composition by alternately adjusting the sputtering power of the metal target and the non-metal target to obtain a transition layer substrate with a gradient structure; Deposit a fluorocarbon polymer main film layer on the transition layer substrate, and control the partial pressure of C4F8 gas and the substrate temperature by using a pulsed magnetron sputtering process to generate an anti-fingerprint functional layer substrate with uniform thickness; Perform a stepped in-situ annealing treatment on the anti-fingerprint functional layer substrate, and form a densified crystalline-amorphous composite film layer structure through segmented heating and heat preservation of a multi-zone temperature control module in a vacuum chamber; Perform plasma surface modification on the surface of the annealed substrate, and form low surface energy chemical groups on the surface of the functional layer by using a fluorine-containing reaction gas to complete the terminal functionalization treatment of the anti-fingerprint film.

[0007] Optionally, perform plasma activation treatment on the surface of the glass substrate, and generate an activation layer by using a mixed gas of an inert gas and a reaction gas in a vacuum environment to form an activated substrate, which specifically includes the following steps: Load the glass substrate onto the fixture assembly in the vacuum chamber, fix it by electrostatic adsorption and mechanical clamping, and perform argon jet pretreatment to remove impurities on the surface of the glass substrate to obtain a pretreated substrate; Pump the vacuum chamber to a preset vacuum degree, introduce an Ar / O2 mixed gas, and adjust the volume ratio of O2 in a gradient of 10%-30% to increase, and maintain the working pressure at 0.5-1.5 Pa to form a controllable atmosphere environment; Apply an excited plasma with a preset radio frequency power, and at the same time control the substrate stage to rotate at a preset first rotation speed at a constant speed for staged treatment: the first stage is processed in a continuous wave mode for 120 s, and the second stage is switched to a pulse mode for 60 s to generate an activation layer; Under the condition of maintaining the plasma state, monitor the change of the surface contact angle in real time, and stop the treatment when it reaches 65°±3° to obtain an activated substrate with active hydroxyl groups.

[0008] Optionally, deposit a gradient transition layer on the surface of the activated substrate, and form a Cr-Si composite transition layer with continuously changing composition by alternately adjusting the sputtering power of the metal target and the non-metal target to obtain a transition layer substrate with a gradient structure, which specifically includes the following steps: Transfer the activated substrate to the sputtering chamber, adjust the target-substrate distance between the Cr target and the Si target to the range of 50-150 mm through a multi-target collaborative positioning system, synchronously introduce Ar gas and maintain the chamber pressure at 0.3-0.8 Pa to complete the pretreatment of the gradient transition layer deposition; Start the Cr target magnetron sputtering source, and sputter at a power density of 2-4 W / cm at a substrate temperature of 80-120 °C 2 for 30-60 s to form a primary Cr metal bonding layer; Switch to the Si target sputtering mode, and use a pulsed DC power supply at a power density of 1.5-3 W / cm 2Sputter for 20 - 40 s while introducing N2 gas to form a SiNx interface strengthening layer; among them, the flow ratio of Ar:N2 = 5:1.

[0009] Optionally, switch to the Si target sputtering mode, and use a pulsed DC power supply with a power density of 1.5 - 3 W / cm 2 Sputter for 20 - 40 s while introducing N2 gas to form a SiNx interface strengthening layer. After that, the following steps are also included: Start the dual - target alternating sputtering program to deposit and form a gradient transition layer; During the alternating sputtering process, synchronously apply an auxiliary plasma beam to perform in - situ ion bombardment on the deposition interface to eliminate interlayer stress and enhance the film density; Real - time monitor the Cr / Si atomic ratio through an X - ray fluorescence spectrometer, and terminate the deposition when the preset gradient curve is reached to obtain a gradient transition layer substrate with a target thickness and continuously changing composition.

[0010] Optionally, the process of executing the dual - target alternating sputtering program is as follows: Alternate according to the time gradient, increase the power of the Cr target from 2 kW to 5 kW, and decrease the power of the Si target from 3 kW to 1 kW. The alternating time per cycle is 10 - 30 s, and a total of 5 - 8 cycles are executed to form a gradient transition layer with the Cr content gradually changing from 100% to 50%.

[0011] Optionally, for depositing the fluorocarbon polymer main film layer on the transition layer substrate, use a pulsed magnetron sputtering process to control the partial pressure of C4F8 gas and the substrate temperature to generate an anti - fingerprint functional layer substrate with uniform thickness, specifically including the following steps: Transfer the transition layer substrate to the pulsed magnetron sputtering station, adjust the distance between the C target and the transition layer substrate to the target distance through a multi - axis positioning system, synchronously pre - heat the transition layer substrate to 150 - 200 °C, and evacuate to a working pressure of 0.2 - 0.5 Pa; Introduce a mixed gas of C4F8 gas and Ar gas, where the partial pressure of C4F8 increases from 10% to 30% according to the time gradient, and the total gas flow is controlled at 30 - 50 sccm to form a dynamic reaction atmosphere environment; Start the high - power pulsed magnetron sputtering mode, set the pulse parameters, and in the initial stage, use a low power density of 2 - 3 W / cm 2 Sputter for 30 - 60 s to generate a fluorocarbon polymer nucleation layer.

[0012] Optionally, in the initial stage, use a low power density of 2 - 3 W / cm 2 Sputter for 30 - 60 s to generate a fluorocarbon polymer nucleation layer. After that, the following steps are also included: Switch to the composite pulse mode, alternately execute high - power pulses of 8 - 10 W / cm 2, with a low-power DC of 3 - 5 W / cm 2 The periodic output has 3 high-power pulses and 5 s of low-power DC maintenance in each cycle, and a total of 8 - 12 cycles are executed; During the sputtering process, a rotating magnetic field is synchronously applied to assist deposition. The magnetic field strength is 50 - 100 mT, and the direction forms an angle of 30 - 45° with the substrate normal, so that the fluorocarbon polymer molecular chains are arranged along the preset orientation; The film thickness is monitored in real time by a laser interferometer. When the target thickness is reached and the thickness deviation is within the allowable threshold, the deposition is terminated to obtain a substrate with an anti-fingerprint functional layer having a target surface roughness.

[0013] Optionally, the anti-fingerprint functional layer substrate is subjected to a stepped in-situ annealing treatment. Through the segmented heating and heat preservation of the multi-zone temperature control module in the vacuum chamber, a densified crystalline-amorphous composite film layer structure is formed, which specifically includes the following steps: Transfer the anti-fingerprint functional layer substrate to the multi-zone temperature control annealing station. The temperature fields of the substrate edge area and the center area are pre-adjusted by the 8-zone independent heating module set in the vacuum chamber. The initial temperature of the edge area is set to 180 ± 5 °C, and the initial temperature of the center area is set to 150 ± 5 °C to form a gradient temperature field substrate; Start the dynamic vacuum regulation system. Under the condition of maintaining the preset vacuum degree, introduce He gas and synchronously activate the residual gas analyzer to monitor O2 to the preset content in real time to complete the optimization of the annealing environment; Execute a stepped heating and cooling program: In the first stage, heat up to 300 °C at a rate of 10 °C / min and keep it warm for 10 min. In the second stage, cool down to 250 °C at a rate of 5 °C / min and keep it warm for 15 min. In the third stage, cool down to 200 °C at a rate of 2 °C / min, and at the same time control the substrate to rotate uniformly at the second rotation speed to generate a crystalline-amorphous intertwined composite structure; Monitor the film layer in real time by a laser interferometer. When the film layer stress value drops below the preset qualified value and the crystallization rate is stable in the range of 40 - 60%, terminate the annealing to obtain a densified composite film layer substrate.

[0014] Optionally, plasma surface modification is performed on the surface of the annealed substrate. A fluorine-containing reactive gas is used to form low surface energy chemical groups on the surface of the functional layer to complete the terminal functionalization treatment of the anti-fingerprint film, which specifically includes the following steps: Transfer the composite film layer substrate to the plasma surface treatment station. Stabilize the substrate temperature at 80 - 120 °C through the pre-heating module, and introduce a mixed gas of CF4 and O2 to maintain the working pressure of 0.1 - 0.3 Pa to form a fluorine-containing reactive atmosphere environment; Adopt dual-mode plasma excitation: In the first stage, continuous microwave power is applied for 60 - 90 s to deeply penetrate fluorocarbon groups into the film surface; in the second stage, it is switched to the pulsed radio frequency mode for 30 - 60 s to promote the directional arrangement of surface C-F bonds; During the plasma treatment process, a rotating electric field is synchronously applied to assist, driving fluoride ions to migrate along the normal direction of the substrate to form a gradient fluorination layer; The surface hydrophobicity is monitored in real time through an on-line contact angle measuring instrument. When the contact angle reaches the preset angle and the rolling angle ≤ 10°, the treatment is terminated to obtain a finished substrate of an anti-fingerprint film with a low surface energy terminal functional layer.

[0015] The present invention also provides a vacuum coating device for coating an anti-fingerprint film, which is used to implement the vacuum coating method for coating an anti-fingerprint film as described above. The vacuum coating device specifically includes: A vacuum chamber system, including an integrated vacuum chamber, and a substrate transfer track is arranged in the vacuum chamber; A substrate processing component, including a fixture component and an 8-zone independently temperature-controlled substrate table; A plasma processing device, including a radio frequency / microwave dual-mode plasma generator, a rotating electric field assistance module, and an on-line contact angle measuring instrument; A sputtering deposition device, including an adjustable magnetron sputtering target component, a high-power pulsed magnetron sputtering power supply, and an auxiliary plasma beam source; An intelligent control module, including a multi-sensor module and a gradient process parameter controller.

[0016] Compared with the prior art, the present invention has the following beneficial effects: First, an activation layer is constructed on the surface of the glass substrate through plasma activation treatment, and then a Cr-Si gradient transition layer is deposited on the activated substrate by using an alternately power-regulated magnetron sputtering technique; then a fluorocarbon polymer main functional layer is generated on the surface of the transition layer by using a pulsed magnetron sputtering process; then the film layer is densified and reconstructed through multi-temperature zone collaborative step annealing; finally, a low surface energy terminal functional layer is formed by using fluorine-containing plasma surface modification; through the synergistic effect of plasma activation and the gradient transition layer, the film-substrate bonding strength of the anti-fingerprint film is improved; the pulsed magnetron sputtering combined with the step annealing process ensures the film thickness uniformity in the curved surface area; the fluorine-containing plasma surface modification makes the contact angle stable, and the overall process realizes the improvement in terms of film layer adhesion, curved surface adaptability and durability. Through the combination of the composite coating process and the intelligent control technology, the three-dimensional collaborative regulation of "interface strengthening-functional construction-structure optimization" of the anti-fingerprint film is realized in a single vacuum environment. Description of the Drawings

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0018] The structures, proportions, sizes, etc. shown in the drawings of this specification are only used to cooperate with the content disclosed in the specification for those familiar with this technology to understand and read, and are not used to limit the conditions for the implementation of the present invention. Therefore, they do not have a substantial technical meaning. Any modification of the structure, change in the proportional relationship, or adjustment of the size, without affecting the effects that the present invention can produce and the purposes that can be achieved, should still fall within the scope that can be covered by the technical content disclosed in the present invention.

[0019] Figure 1 It is one of the flow diagrams of the vacuum coating method for plating an anti-fingerprint film in the first embodiment; Figure 2 It is another flow diagram of the vacuum coating method for plating an anti-fingerprint film in the first embodiment; Figure 3 It is the third flow diagram of the vacuum coating method for plating an anti-fingerprint film in the first embodiment; Figure 4 It is the overall schematic diagram of the vacuum coating equipment for plating an anti-fingerprint film in the second embodiment; Figure 5 It is the schematic diagram of the substrate processing component of the vacuum coating equipment for plating an anti-fingerprint film in the second embodiment. Detailed implementation manners

[0020] To make the invention objectives, features, and advantages of the present invention more obvious and understandable, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described below are only some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0021] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present invention. It should be noted that when a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be an intermediate component present at the same time.

[0022] The technical solution of the present invention will be further described below in conjunction with the drawings and through specific embodiments.

[0023] Embodiment 1: Combined Figures 1 to 3 As shown, the embodiment of the present invention provides a vacuum coating method for plating an anti-fingerprint film, including: S1. Perform plasma activation treatment on the surface of the glass substrate. In a vacuum environment, a mixed gas of an inert gas and a reactive gas is used to generate an activation layer to form an activated substrate. The plasma activation treatment physically bombards and chemically etches the surface of the glass substrate in a vacuum environment by introducing a mixed gas of an inert gas (such as argon) and a reactive gas (such as oxygen). This step effectively removes contaminants on the substrate surface (such as organic residue and adsorbed water molecules), and at the same time forms a nanoscale rough surface structure, significantly increasing the surface active sites (such as hydroxyl groups). The surface energy of the activated substrate is improved, providing a stable chemical bonding interface for the uniform deposition of the subsequent gradient transition layer, and avoiding the problem of insufficient adhesion of the film layer caused by surface contamination or low activity.

[0024] S2. Deposit a gradient transition layer on the surface of the activated substrate. By alternately adjusting the sputtering power of the metal target and the non-metal target, a Cr-Si composite transition layer with continuously changing composition is formed to obtain a transition layer substrate with a gradient structure. By alternately adjusting the sputtering power of the metal target (Cr) and the non-metal target (Si), a continuous gradient change in the composition of the Cr-Si composite transition layer is achieved. The initial deposition of the metal Cr layer provides a strong interfacial bonding force, while the gradual introduction of Si alleviates the difference in the coefficient of thermal expansion between the metal layer and the subsequent fluorocarbon polymer layer. The gradient transition layer effectively disperses the interfacial stress through the gradual change in composition, inhibits cracking or peeling of the film layer caused by thermal stress or mechanical stress, and at the same time provides a bridge for the composition and structure transition of the subsequent main functional layer deposition.

[0025] S3. Deposit a fluorocarbon polymer main film layer on the transition layer substrate. The pulse magnetron sputtering process is used to control the partial pressure of the C4F8 gas and the substrate temperature to generate an anti-fingerprint functional layer substrate with uniform thickness. The fluorocarbon polymer layer is deposited by a pulsed magnetron sputtering process under the conditions of dynamically adjusting the partial pressure of C4F8 gas and the substrate temperature. The pulsed mode avoids the overheating problem of traditional DC sputtering through intermittent high-energy plasma bombardment, ensuring the integrity of the molecular structure of fluorocarbon compounds. By precisely controlling the gas partial pressure and the substrate temperature, the fluorine-carbon ratio (F / C) and the molecular chain arrangement are regulated to form a continuous film layer with strong hydrophobicity and high wear resistance. The fluorocarbon polymer layer generated in this step has the characteristic of low surface energy and is the core implementation layer of the fingerprint-proof function.

[0026] S4. Perform a stepped in-situ annealing treatment on the substrate of the fingerprint-proof functional layer. Through the segmented heating and heat preservation of the multi-zone temperature control module in the vacuum chamber, a densified crystalline-amorphous composite film layer structure is formed. The stepped annealing performs segmented heating and heat preservation on different regions of the substrate through the multi-zone temperature control module. In the initial high-temperature stage, the molecular chains of the fluorocarbon polymer are reorganized to eliminate internal defects in the film layer. In the subsequent gradient cooling stage, the ratio of the crystalline and amorphous phases is controlled to form an intertwined composite structure. The annealing process is completed in a vacuum environment to avoid oxidation pollution. At the same time, the hardness of the film layer is increased by the crystalline phase, and the flexibility is maintained by the amorphous phase, finally obtaining a composite film layer with both high wear resistance and impact resistance.

[0027] S5. Perform plasma surface modification on the surface of the annealed substrate. Use a fluorine-containing reaction gas to form low-surface-energy chemical groups on the surface of the functional layer to complete the terminal functionalization treatment of the fingerprint-proof film.

[0028] Perform plasma surface modification on the annealed film layer using a fluorine-containing reaction gas (such as CF4). High-energy plasma bonds fluorine atoms to the surface of the film layer to form stable C-F bond low-surface-energy chemical groups. This treatment further reduces the surface energy, enhances the hydrophobicity and anti-fingerprint adhesion ability, and at the same time fills the micro-pores through the fluorinated layer to improve the chemical stability and corrosion resistance of the film layer.

[0029] The working principle of the present invention is as follows: First, an activation layer is constructed on the surface of the glass substrate through plasma activation treatment. Then, a Cr-Si gradient transition layer is deposited on the activated substrate by using magnetron sputtering technology with alternating power regulation. Next, a fluorocarbon polymer main functional layer is formed on the surface of the transition layer by using pulsed magnetron sputtering process. Then, the film layer is densified and reconstructed through stepped annealing with multi-temperature zones coordinated. Finally, a low surface energy terminal functional layer is formed by using fluorine-containing plasma surface modification. Through the synergistic effect of plasma activation and the gradient transition layer, the film-substrate bonding strength of the fingerprint-proof film is improved. The pulsed magnetron sputtering combined with the stepped annealing process ensures the film thickness uniformity in the curved surface area. The fluorine-containing plasma surface modification makes the contact angle stable. The overall process realizes improvements in film layer adhesion, curved surface adaptability, and durability. Through the combination of the composite coating process and intelligent control technology, three-dimensional coordinated regulation of "interface strengthening-functional construction-structure optimization" of the fingerprint-proof film is achieved in a single vacuum environment.

[0030] In this embodiment, specifically, step S1 specifically includes the following steps: S11, Load the glass substrate onto the fixture assembly in the vacuum chamber, fix it by combining electrostatic adsorption and mechanical clamping, and perform argon jet pretreatment to remove impurities on the surface of the glass substrate to obtain a pretreated substrate; By combining electrostatic adsorption and mechanical clamping, both the stress concentration at the edge of the substrate and the risk of scratches caused by pure mechanical clamping are avoided, and the flatness of the substrate is ensured through the uniform distribution of the electrostatic field. The argon jet pretreatment uses a pressure of 0.3 - 0.5 MPa and a flow rate of 30 - 50 sccm. While efficiently removing surface sub-micron level pollutants (such as grease, microparticles), the kinetic energy of argon is controlled to avoid micro-cracks on the substrate.

[0031] S12, Pump the vacuum chamber to a preset vacuum degree, introduce an Ar / O2 mixed gas, and adjust the volume ratio of O2 in a gradient increasing manner from 10% - 30%, and maintain the working gas pressure at 0.5 - 1.5 Pa to form a controllable atmosphere environment; Pump the vacuum chamber to a base vacuum degree ≤ 5×10 -3 Pa, effectively eliminating the interference of residual gases. Subsequently, introduce the Ar / O2 mixed gas and dynamically adjust the volume ratio of O2 (10% → 30%). The initial low oxygen ratio (10%) avoids excessive etching of the substrate surface by highly reactive oxygen plasma, and gradually increasing to 30% gradually increases the surface hydroxyl density and optimizes the bonding force of the subsequent film layer. The setting of the working gas pressure of 0.5 - 1.5 Pa not only ensures that the plasma density meets the activation requirements but also avoids non-uniform activation caused by too long residence time of the reaction gas due to too high gas pressure. This dynamic gas adjustment strategy makes the distribution of surface hydroxyls on the substrate more uniform, laying a chemical activity foundation for the deposition of the gradient transition layer.

[0032] S13. Apply an excitation plasma with a preset radio frequency power while controlling the substrate stage to rotate at a preset first rotation speed at a constant speed for staged processing: in the first stage, process for 120 s in continuous wave mode, and in the second stage, switch to pulse mode for 60 s to generate an activation layer. In the first stage, the continuous wave mode (300 - 800 W, 120 s) rapidly generates a uniform plasma sheath layer through high power density to achieve rapid activation of the substrate surface. After switching to the pulse mode (duty cycle 30% - 60%, 60 s), the thermal load is reduced through intermittent energy input to avoid microstructural damage caused by overheating of the substrate. The dual-mode collaborative processing improves the activation efficiency while finely regulating the surface roughness to form an activation layer with both high activity and low defects.

[0033] S14. While maintaining the plasma state, monitor the change of the surface contact angle in real time. When it reaches 65° ± 3°, stop the processing to obtain an activated substrate with active hydroxyl groups.

[0034] Through real-time monitoring by an on-line contact angle measuring instrument, terminate the processing when the contact angle reaches 65° ± 3°. This threshold corresponds to the optimal hydroxyl coverage rate - a contact angle lower than 62° indicates over-activation (too high surface energy, prone to causing internal stress in the film layer), and higher than 68° indicates insufficient activation (low hydroxyl density, reducing film layer adhesion). The dynamic monitoring mechanism can automatically compensate for process fluctuations (such as gas ratio deviation, power fluctuation) compared with traditional timed processing, ensuring the consistency of the activation effect between batches.

[0035] In this embodiment, specifically, step S2 specifically includes the following steps: S21. Transfer the activated substrate to the sputtering chamber, adjust the target-substrate distance between the Cr target and the Si target to the range of 50 - 150 mm through a multi-target collaborative positioning system, synchronously introduce Ar gas and maintain the chamber pressure at 0.3 - 0.8 Pa to complete the pretreatment of the gradient transition layer deposition. By adjusting the target-substrate distance between the Cr target and the Si target (50 - 150 mm) and combining the collaborative control of the working pressure of Ar gas (0.3 - 0.8 Pa), the plasma distribution uniformity is optimized to ensure the stability of the initial environment for the transition layer deposition. The dynamic adjustment of the target-substrate distance adapts to the coating requirements of substrates with different curvatures (curvature radius 2 - 50 mm) to avoid edge film thickness deviation caused by fixed target positions.

[0036] S22. Start the Cr target magnetron sputtering source and sputter at a power density of 2 - 4 W / cm² at a substrate temperature of 80 - 120 °C 2 for 30 - 60 s to form a primary Cr metal bonding layer. Use a Cr target power density of 2 - 4 W / cm² 2Cooperative parameters with a substrate temperature of 80 - 120 °C form a dense primary Cr metal bonding layer on the substrate surface. The power density range ensures that the kinetic energy of sputtered particles (5 - 15 eV) is sufficient to penetrate the surface adsorption layer and form strong chemical bonds with the activated substrate. The substrate temperature is controlled in the range of 80 - 120 °C, which not only promotes the surface migration of Cr atoms to improve the film density but also avoids the interfacial stress caused by excessive substrate thermal expansion at high temperatures.

[0037] S23, Switch to the Si target sputtering mode. Use a pulsed DC power supply (frequency 1 - 5 kHz, duty cycle 40% - 70%) with a power density of 1.5 - 3 W / cm 2 Sputter for 20 - 40 s while introducing N2 gas to generate a SiNx interfacial strengthening layer; among them, the flow ratio of Ar:N2 = 5:1.

[0038] Drive the Si target sputtering through a pulsed DC power supply (frequency 1 - 5 kHz, duty cycle 40% - 70%) and introduce N2 gas (Ar:N2 = 5:1) to generate a SiNx interfacial strengthening layer. The pulsed mode enhances the ionization rate of Si atoms (ionization rate > 80%) through intermittent high-energy input, while avoiding overheating of the target caused by continuous sputtering. The N2 gas flow ratio (5:1) controls the reaction activity of Si and N to generate a Si-rich SiNx layer (x = 0.8 - 1.2), whose thermal expansion coefficient is between the Cr layer and the subsequent fluorocarbon layer, effectively alleviating the interfacial thermal mismatch stress.

[0039] S24, Start the dual-target alternating sputtering process to deposit and form a gradient transition layer; the process of executing the dual-target alternating sputtering process is as follows: Alternate according to the time gradient, increase the power of the Cr target from 2 kW to 5 kW, and decrease the power of the Si target from 3 to 1 kW. The alternating time per cycle is 10 - 30 s, and a total of 5 - 8 cycles are executed to form a gradient transition layer with the Cr content gradually changing from 100% to 50%.

[0040] It should be noted that the increasing Cr target power (slope 0.5 - 1 kW / s) ensures a gradual increase in the supply of Cr atoms, while the decreasing Si target power (slope 0.3 - 0.6 kW / s) realizes a smooth transition of the Si component. The number of alternating cycles (5 - 8 times) is designed to gradually change the Cr / Si atomic ratio from 100%:0% to 50%:50%, forming a gradient transition layer with a continuously changing composition (gradient slope ≤ 5% / nm). This parameter combination avoids the obvious interface of traditional multi-layer coatings, suppresses the risk of interlayer peeling, and at the same time provides a natural transition of composition and structure for the subsequent main functional layer.

[0041] S25, Synchronously apply an auxiliary plasma beam (energy 50 - 100 eV, beam current density 2 - 5 mA / cm 2), in-situ ion bombardment is carried out on the deposition interface to eliminate the interlayer stress and enhance the film density; During the alternating sputtering process, an auxiliary plasma beam is synchronously applied (energy 50 - 100 eV, beam current density 2 - 5 mA / cm 2 ), and in-situ ion bombardment is carried out on the deposition interface. The ion energy of 50 - 100 eV can effectively break weak-bonded atoms, eliminate the tendency of columnar crystal growth, transform the film structure from porous columnar to dense amorphous, reduce the residual stress of the film layer to, and significantly improve the flexural strength of the film layer.

[0042] S26, the Cr / Si atomic ratio is monitored in real time by an X-ray fluorescence spectrometer, and when the preset gradient curve is reached, the deposition is terminated to obtain a gradient transition layer substrate with a target thickness and continuously varying composition.

[0043] The Cr / Si atomic ratio is monitored in real time by an X-ray fluorescence spectrometer (XRF), and when the preset gradient curve (Cr:Si = 1:1 ± 0.05) is reached, the deposition is terminated. The XRF detection frequency is set to 3 - 5 times per second, and the moving average algorithm is combined to eliminate the interference of signal fluctuations, ensuring the real-time and accuracy of composition control. Compared with the traditional timing control, this dynamic feedback mechanism can automatically compensate for process fluctuations (such as target consumption, gas ratio drift), improving the composition consistency between batches.

[0044] In this embodiment, specifically, step S3 specifically includes the following steps: S31, transfer the transition layer substrate to the pulsed magnetron sputtering station, adjust the distance between the C target and the transition layer substrate to the target distance through a multi-axis positioning system, synchronously preheat the transition layer substrate to 150 - 200 °C, and evacuate to the working pressure of 0.2 - 0.5 Pa; The distance between the C target and the substrate is adjusted to 80 - 120 mm through a multi-axis positioning system. Combining the coordinated control of substrate preheating at 150 - 200 °C and the working pressure of 0.2 - 0.5 Pa optimizes the initial conditions for the deposition of fluorocarbon polymers. The substrate preheating temperature range (150 - 200 °C) promotes the cracking efficiency of C4F8 gas, while avoiding the breaking of fluorocarbon molecular chains at too high temperatures (>200 °C). The working pressure of 0.2 - 0.5 Pa balances the kinetic energy of sputtered particles and the gas scattering effect, providing a stable environment for subsequent gradient deposition.

[0045] S32, introduce a mixed gas of C4F8 gas and Ar gas, where the partial pressure of C4F8 increases from 10% to 30% according to a time gradient, and the total gas flow is controlled at 30 - 50 sccm to form a dynamic reaction atmosphere environment; Adopt a dynamic gas control strategy with a gradually increasing C4F8 partial pressure gradient (10% → 30%) and a total flow rate of 30 - 50 sccm to achieve progressive regulation of the fluorocarbon ratio. The initial low C4F8 partial pressure (10%) reduces the etching risk of the high fluorine activity on the surface of the transition layer, and gradually increasing to 30% partial pressure promotes the C - F bond density in the fluorocarbon polymer (F / C ratio 1.6 → 1.8), making the composition of the fluorocarbon layer gradually change along the thickness direction, forming a molecular structure with an increasing hydrophobicity gradient.

[0046] S33. Start the high - power pulsed magnetron sputtering mode, set the pulse parameters: frequency 500 - 800 Hz, pulse width 50 - 100 μs. In the initial stage, sputter at a low power density of 2 - 3 W / cm 2 for 30 - 60 s to generate a fluorocarbon polymer nucleation layer.

[0047] The high - power pulsed magnetron sputtering mode combined with the initial low power density realizes the controllable dissociation and deposition of fluorocarbon molecules through the synergistic effect of short - time high - energy pulses and long - time low - power maintenance.

[0048] S34. Switch to the composite pulse mode, alternately execute high - power pulses of 8 - 10 W / cm 2 , and periodic outputs of low - power DC of 3 - 5 W / cm 2 . Each cycle includes 3 high - power pulses and 5 s of low - power DC maintenance, and a total of 8 - 12 cycles are executed; The composite pulse mode (alternation of high - power 8 - 10 W / cm² pulses and low - power 3 - 5 W / cm 2 DC) regulates the film growth mode through periodic energy input. Each cycle includes 3 high - power pulses and 5 s of low - power maintenance. The high - power stage promotes the deep penetration of fluorocarbon molecules, and the low - power stage allows the molecular chains to relax and reorganize. The design of executing 8 - 12 cycles enables the film to form a dense - porous alternating microstructure, taking into account both hydrophobicity (contact angle > 110°) and mechanical toughness.

[0049] S35. During the sputtering process, synchronously apply a rotating magnetic field to assist deposition, with a magnetic field intensity of 50 - 100 mT and a direction forming an angle of 30 - 45° with the substrate normal, so that the fluorocarbon polymer molecular chains are arranged along the preset orientation; The rotating magnetic field - assisted deposition (intensity 50 - 100 mT, angle 30 - 45°) drives the ionized fluorocarbon molecules to migrate directionally along the magnetic field lines through the Lorentz force. The magnetic field setting makes the orientation degree of the molecular chains > 70%, and the design of an angle of 30 - 45° adapts to the change in the normal direction of the curved substrate (curvature radius 2 - 10 mm), ensuring the consistency of the molecular chain orientation at each position.

[0050] S36. Monitor the film thickness in real time through a laser interferometer. When the target thickness is reached and the thickness deviation is within the allowable threshold, terminate the deposition to obtain an anti-fingerprint functional layer substrate with the target surface roughness.

[0051] The real-time monitoring by the laser interferometer combined with the control of the thickness deviation threshold dynamically adjusts the sputtering power and the substrate rotation speed through closed-loop feedback. When the film thickness in the area with a curvature radius of 5 mm is detected to decrease, the system automatically increases the local target-substrate distance and the partial pressure of C4F8 to ensure the thickness uniformity in the whole area. Compared with the traditional timed deposition, this dynamic control improves the pass rate of the film thickness.

[0052] In this embodiment, specifically, step S4 specifically includes the following steps: S41. Transfer the anti-fingerprint functional layer substrate to the multi-zone temperature-controlled annealing station, and pre-adjust the temperature field of the substrate edge area and the center area through the 8-zone independent heating module set in the vacuum chamber. The initial temperature of the edge area is set to 180 ± 5 °C, and the initial temperature of the center area is set to 150 ± 5 °C to form a gradient temperature field substrate; Differentially control the temperature of the substrate edge area (180 ± 5 °C) and the center area (150 ± 5 °C) through the 8-zone independent heating module to form a 30 °C gradient temperature field, compensating for the edge heat dissipation effect during the annealing process of the curved surface substrate (the edge heat loss rate is 20 - 30% higher than that of the center). Raising the initial temperature of the edge area to 180 °C can pre-activate the interfacial diffusion between the transition layer and the main functional layer, while the setting of 150 °C in the center area avoids the decomposition of the fluorocarbon layer caused by overheating. This parameter combination effectively suppresses the thermal stress concentration during the annealing process and provides a uniform thermal field basis for the subsequent stepwise annealing.

[0053] S42. Under the condition of maintaining the preset vacuum degree, introduce He gas and synchronously activate the residual gas analyzer to monitor the O2 content in real time until it reaches the preset content to complete the optimization of the annealing environment; Introduce He gas under the condition of maintaining the vacuum degree. Utilize the high thermal conductivity of He to enhance the heat transfer efficiency between the substrate and the temperature control module, and at the same time monitor the O2 content in real time through the residual gas analyzer. The dynamic balance of the He gas flow rate and the vacuum degree not only avoids the turbulent disturbance caused by excessive He gas but also ensures the oxidation-free risk of the annealing environment.

[0054] S43. Execute a stepwise heating and cooling program: In the first stage, heat up to 300 °C at a rate of 10 °C / min and hold for 10 min. In the second stage, cool down to 250 °C at a rate of 5 °C / min and hold for 15 min. In the third stage, cool down to 200 °C at a rate of 2 °C / min, and at the same time control the substrate to rotate at a second rotation speed uniformly to generate a composite structure with an intertwined crystalline-amorphous state; The stepwise heating and cooling program is executed in three stages: Rapid heating (from 10 °C / min to 300 °C and holding for 10 min) promotes the recombination of fluorocarbon molecular chains and eliminates internal pores in the film layer; Slow cooling (from 5 °C / min to 250 °C and holding for 15 min) controls the growth rate of the crystalline phase and forms a continuous grain boundary network; Low-speed cooling (from 2 °C / min to 200 °C) induces the amorphous phase to fill the grain boundary gaps and forms an interlocking structure.

[0055] S44, the film layer is monitored in real time by a laser interferometer. When the film layer stress value drops below the preset qualified value and the crystallization rate is stable in the range of 40 - 60%, the annealing is terminated to obtain a densified composite film layer substrate.

[0056] The residual stress of the film layer is monitored in real time by a laser interferometer. When the stress value drops below 200 MPa and the crystallization rate is 40 - 60%, the annealing is terminated. The stress threshold is set based on the safety boundary of the film-substrate bonding strength, and the crystallization rate range ensures balanced mechanical properties - when the crystalline phase is less than 40%, the film layer is too soft, and when it is greater than 60%, the brittleness increases. The dynamic monitoring mechanism can identify stress anomalies in the area with a curvature radius of 2 mm, automatically trigger local temperature control compensation, and finally obtain a densified composite film layer with consistent performance in the whole area.

[0057] In this embodiment, specifically, step S5 specifically includes the following steps: S51, transfer the composite film layer substrate to the plasma surface treatment station, stabilize the substrate temperature at 80 - 120 °C through the preheating module, and introduce a mixed gas of CF4 and O2 (the volume ratio of CF4 to O2 is dynamically adjusted from 3:1 to 5:1), maintain the working pressure at 0.1 - 0.3 Pa, and form a fluorine-containing reaction atmosphere environment; Through the control of substrate preheating (80 - 120 °C) and the dynamic ratio of the CF4 / O2 mixed gas (volume ratio from 3:1 to 5:1), the surface reaction activity of fluorocarbon groups is optimized. The preheating temperature range (80 - 120 °C) promotes the cracking efficiency of CF4 molecules. The setting of the working pressure of 0.1 - 0.3 Pa balances the plasma density and the gas residence time - when it is below 0.1 Pa, the plasma distribution is uneven. The ratio of CF4 / O2 is gradually adjusted from 3:1 to 5:1. In the initial stage, an appropriate amount of O2 (20 - 25%) clears the weakly bonded fluorocarbon fragments on the surface through oxidative etching, and then increasing the CF4 ratio enhances the formation efficiency of C-F bonds, forming a uniform fluorine-containing reaction environment.

[0058] S52, adopting dual-mode plasma excitation: In the first stage, continuous microwave power (2.45 GHz, power 300 - 500 W) is applied for 60 - 90 s to enable the deep penetration of fluorocarbon groups to the surface of the film layer; in the second stage, it is switched to the pulsed radio frequency mode (13.56 MHz, duty cycle 40% - 60%, peak power 800 - 1000 W) for 30 - 60 s to promote the directional arrangement of surface C-F bonds; Adopting dual-mode excitation of continuous microwave (300 - 500 W, 60 - 90 s) and pulsed radio frequency (800 - 1000 W, 30 - 60 s): Continuous microwave stage: The high power density enables the plasma penetration depth to reach 5 - 10 nm, and the fluorocarbon groups penetrate to the subsurface of the film layer to form an anchoring layer; Pulsed radio frequency stage (duty cycle 40 - 60%): By intermittent high-energy input, it drives the alignment of C-F bonds along the normal direction of the substrate. At the same time, the pulse interval allows the molecular chains to relax, avoiding the embrittlement of the film layer caused by continuous processing. This parameter combination realizes the synergistic construction of the deep penetration of fluorocarbon groups and the surface-oriented structure, synchronously improving the hydrophobicity and wear resistance.

[0059] S53, during the plasma treatment process, a rotating electric field assistance is applied synchronously (field strength 50 - 100 V / cm, frequency 1 - 5 kHz) to drive the migration of fluoride ions along the normal direction of the substrate to form a gradient fluorinated layer; The rotating electric field assistance drives the migration of fluoride ions along a three-dimensional path through the periodic change of the electric field direction (rotation rate 10 - 30 rpm). The setting of the electric field strength of 50 - 100 V / cm makes the migration rate of fluoride ions (0.1 - 0.3 μm / s) match the deposition rate (0.05 - 0.1 nm / s), forming a gradient distribution with the fluorine content decreasing from the surface to the inside (surface F atomic concentration 25 at.% → inside 10 at.%). The angle between the electric field direction and the normal of the substrate is 30 - 45°, adapting to the geometric characteristics of the curved substrate (curvature radius 2 - 10 mm) to ensure the consistency of the fluorinated layer thickness in each area. The gradient fluorinated layer design not only retains the high hydrophobicity of the surface layer (contact angle > 118°), but also maintains the toughness of the film layer (elastic modulus 2 - 4 GPa) through the low fluorine content inside.

[0060] S54, the surface hydrophobicity is monitored in real time through an on-line contact angle measuring instrument, and the treatment is terminated when the contact angle reaches the preset angle (118° ± 2°) and the rolling angle ≤ 10° to obtain a finished substrate of the fingerprint-proof film with a low surface energy terminal functional layer.

[0061] The surface hydrophobicity is monitored in real time by an online contact angle measuring instrument, and the treatment is terminated when the contact angle reaches 118°±2° and the rolling angle ≤10°. The contact angle threshold is set based on the critical value of the fingerprint-proof performance - when it is lower than 116°, the anti-fouling ability decreases significantly (the oil stain residue area increases by 50%), and when it is higher than 120°, the adhesion of the film layer is weakened due to too low surface energy. The control of the rolling angle (≤10°) ensures that pollutants roll off easily, avoiding misjudgment of performance caused by a single static contact angle index. The dynamic feedback mechanism combined with the PID algorithm can automatically compensate for process fluctuations (such as gas ratio drift, power fluctuations), reducing the standard deviation of the hydrophobic performance between batches compared to traditional processes.

[0062] Example Two: Combined with Figure 4 and Figure 5 As shown, the present invention also provides a vacuum coating device for coating a fingerprint-proof film, which is used to implement the vacuum coating method for coating a fingerprint-proof film as in Example One. The vacuum coating device specifically includes: The vacuum chamber system 10, including an integrated vacuum chamber 11, and a substrate transfer track is provided inside the vacuum chamber; The substrate processing component 20, including a fixture component and an 8-zone independently temperature-controlled substrate stage 21; The plasma processing device, including a radio frequency / microwave dual-mode plasma generator, a rotating electric field assistance module, and an online contact angle measuring instrument; The sputtering deposition device 30, including an adjustable magnetron sputtering target component, a high-power pulsed magnetron sputtering power supply, and an auxiliary plasma beam source; The intelligent control module, including a multi-sensor module (real-time monitoring of film thickness, temperature, and air pressure) and a gradient process parameter controller (dynamic adjustment of power, gas flow, and target-substrate distance).

[0063] As described above, the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting it; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A vacuum coating method for plating an anti-fingerprint film, characterized in that, Comprising: Performing plasma activation treatment on the surface of a glass substrate, generating an activation layer by using a mixed gas of an inert gas and a reactive gas in a vacuum environment to form an activated substrate; Depositing a gradient transition layer on the surface of the activated substrate, and forming a Cr-Si composite transition layer with continuously changing composition by alternately adjusting the sputtering power of a metal target and a non-metal target to obtain a transition layer substrate with a gradient structure; Depositing a fluorocarbon polymer main film layer on the transition layer substrate, controlling the partial pressure of C4F8 gas and the substrate temperature by using a pulsed magnetron sputtering process to generate an anti-fingerprint functional layer substrate with uniform thickness; Performing stepped in-situ annealing treatment on the anti-fingerprint functional layer substrate, and forming a densified crystalline-amorphous composite film layer structure through segmented heating and heat preservation of a multi-zone temperature control module in a vacuum chamber; Performing plasma surface modification on the surface of the annealed substrate, and forming low surface energy chemical groups on the surface of the functional layer by using a fluorine-containing reactive gas to complete the terminal functionalization treatment of the anti-fingerprint film.

2. The vacuum coating method for plating an anti-fingerprint film according to claim 1, characterized in that, The performing plasma activation treatment on the surface of the glass substrate, generating an activation layer by using a mixed gas of an inert gas and a reactive gas in a vacuum environment to form an activated substrate specifically includes the following steps: Loading the glass substrate on a fixture assembly in a vacuum chamber, fixing it by a combination of electrostatic adsorption and mechanical clamping, and performing argon gas jet pretreatment to remove impurities on the surface of the glass substrate to obtain a pretreated substrate; Pumping the vacuum chamber to a preset vacuum degree, introducing an Ar / O2 mixed gas, wherein the volume ratio of O2 is adjusted in a gradient increase of 10%-30%, and maintaining the working pressure at 0.5-1.5 Pa to form a controllable atmosphere environment; Applying an excitation plasma with a preset radio frequency power, and simultaneously controlling the substrate stage to rotate at a preset first rotation speed at a constant speed for staged treatment: the first stage is treated in a continuous wave mode for 120 s, and the second stage is switched to a pulse mode for 60 s to generate an activation layer; Under the condition of maintaining the plasma state, the change of the surface contact angle is monitored in real time, and the treatment is stopped when it reaches 65°±3° to obtain an activated substrate with active hydroxyl groups.

3. The vacuum coating method for plating an anti-fingerprint film according to claim 1, characterized in that, The depositing a gradient transition layer on the surface of the activated substrate, and forming a Cr-Si composite transition layer with continuously changing composition by alternately adjusting the sputtering power of a metal target and a non-metal target to obtain a transition layer substrate with a gradient structure specifically includes the following steps: Transferring the activated substrate to a sputtering chamber, adjusting the target-substrate distance between the Cr target and the Si target to the range of 50-150 mm through a multi-target collaborative positioning system, synchronously introducing Ar gas and maintaining the chamber pressure at 0.3-0.8 Pa to complete the pretreatment of the gradient transition layer deposition; Start the Cr target magnetron sputtering source and sputter for 30 - 60 s at a power density of 2 - 4 W / cm² with the substrate temperature at 80 - 120 °C to form a primary Cr metal bonding layer; 2 ​ Switch to the Si target sputtering mode, and use a pulsed DC power supply to sputter at a power density of 1.5 - 3 W / cm 2 for 20 - 40 s, while introducing N2 gas to generate a SiNx interface strengthening layer; among them, the flow ratio of Ar:N2 = 5:

1.

4. The vacuum coating method for plating an anti-fingerprint film according to claim 3, characterized in that, Switch to the Si target sputtering mode, and use a pulsed DC power supply to sputter at a power density of 1.5 - 3 W / cm 2 for 20 - 40 s, while introducing N2 gas to generate a SiNx interface strengthening layer. After that, the following steps are also included: Starting a dual-target alternating sputtering program to deposit and form a gradient transition layer; Synchronously applying an auxiliary plasma beam during the alternating sputtering process to perform in-situ ion bombardment on the deposition interface to eliminate interlayer stress and enhance the film layer density; Real-time monitoring the Cr / Si atomic ratio by an X-ray fluorescence spectrometer, and terminating the deposition when reaching a preset gradient curve to obtain a gradient transition layer substrate with a target thickness and continuously changing composition.

5. The vacuum coating method for coating an anti-fingerprint film according to claim 4, characterized in that, The process of executing the dual-target alternating sputtering program is: Alternate according to the time gradient, increase the power of the Cr target from 2 kW to 5 kW, and decrease the power of the Si target from 3 to 1 kW. The alternate time per cycle is 10 - 30 s, and a total of 5 - 8 cycles are executed to form a gradient transition layer with the Cr content gradually changing from 100% to 50%.

6. The vacuum coating method for plating an anti-fingerprint film according to claim 1, wherein Deposit the fluorocarbon polymer main film layer on the transition layer substrate. Use the pulsed magnetron sputtering process to control the partial pressure of C4F8 gas and the substrate temperature to generate an anti-fingerprint functional layer substrate with uniform thickness. The specific steps are as follows: Transfer the transition layer substrate to the pulsed magnetron sputtering station. Adjust the distance between the C target and the transition layer substrate to the target distance through the multi-axis positioning system. Synchronously preheat the transition layer substrate to 150 - 200 °C and evacuate to the working pressure of 0.2 - 0.5 Pa; Introduce a mixed gas of C4F8 gas and Ar gas. The partial pressure of C4F8 increases from 10% to 30% according to the time gradient, and the total gas flow rate is controlled at 30 - 50 sccm to form a dynamic reaction atmosphere environment; Start the high-power pulsed magnetron sputtering mode, set the pulse parameters, and sputter at a low power density of 2-3 W / cm² in the initial stage 2 for 30-60 s to generate a fluorocarbon polymer nucleation layer.

7. The vacuum coating method for plating an anti-fingerprint film according to claim 6, characterized in that, The initial stage is carried out at a low power density of 2-3 W / cm 2 for sputtering for 30-60 s to generate a fluorocarbon polymer nucleation layer, and the following steps are further included: Switch to the composite pulse mode and alternately execute high-power pulses of 8 - 10 W / cm 2 , and low-power direct current of 3 - 5 W / cm 2 for periodic output. Each period includes 3 high-power pulses and 5 s of low-power direct current maintenance, and a total of 8 - 12 periods are executed; Apply a rotating magnetic field to assist deposition during sputtering. The magnetic field strength is 50 - 100 mT, and the direction forms an angle of 30 - 45° with the substrate normal to make the fluorocarbon polymer molecular chains arranged along the preset orientation; Real-time monitor the film thickness through a laser interferometer. Terminate the deposition when the target thickness is reached and the thickness deviation is within the allowable threshold to obtain an anti-fingerprint functional layer substrate with the target surface roughness.

8. The vacuum coating method for coating an anti-fingerprint film according to claim 1, characterized in that, Perform a stepped in-situ annealing treatment on the anti-fingerprint functional layer substrate. Through the segmented heating and heat preservation of the multi-zone temperature control module in the vacuum chamber, form a densified crystalline-amorphous composite film layer structure. The specific steps are as follows: Transfer the anti-fingerprint functional layer substrate to the multi-zone temperature control annealing station. Pre-adjust the temperature field of the substrate edge area and the center area through the 8-zone independent heating module set in the vacuum chamber. The initial temperature of the edge area is set at 180 ± 5 °C, and the initial temperature of the center area is set at 150 ± 5 °C to form a gradient temperature field substrate; Start the dynamic vacuum regulation system. Under the condition of maintaining the preset vacuum degree, introduce He gas and synchronously activate the residual gas analyzer to monitor O2 in real time to the preset content to complete the optimization of the annealing environment; Execute a stepped heating and cooling program: In the first stage, heat up to 300 °C at a rate of 10 °C / min and hold for 10 min. In the second stage, cool down to 250 °C at a rate of 5 °C / min and hold for 15 min. In the third stage, cool down to 200 °C at a rate of 2 °C / min, and at the same time control the substrate to rotate uniformly at the second rotation speed to generate a crystalline-amorphous intertwined composite structure; Real-time monitor the film layer through a laser interferometer. Terminate the annealing when the film layer stress value drops below the preset qualified value and the crystallization rate is stable in the range of 40 - 60% to obtain a densified composite film layer substrate.

9. The vacuum coating method for coating an anti-fingerprint film according to claim 1, characterized in that, Perform plasma surface modification on the surface of the annealed substrate. Use a fluorine-containing reaction gas to form low surface energy chemical groups on the surface of the functional layer to complete the terminal functionalization treatment of the anti-fingerprint film. The specific steps are as follows: Transfer the composite film layer substrate to the plasma surface treatment station, stabilize the substrate temperature at 80 - 120 °C through the preheating module, and introduce a mixed gas of CF4 and O2 to maintain the working pressure at 0.1 - 0.3 Pa to form a fluorine-containing reaction atmosphere environment; Adopt dual-mode plasma excitation: in the first stage, apply continuous microwave power for 60 - 90 s to enable the deep penetration of fluorocarbon groups to the film surface; in the second stage, switch to the pulsed radio frequency mode for 30 - 60 s to promote the directional arrangement of surface C-F bonds; During the plasma treatment process, apply a rotating electric field assist synchronously to drive the migration of fluoride ions along the normal direction of the substrate to form a gradient fluorination layer; Real-time monitor the surface hydrophobicity through an on-line contact angle measuring instrument, and terminate the treatment when the contact angle reaches the preset angle and the rolling angle ≤ 10° to obtain a finished substrate of an anti-fingerprint film with a low surface energy terminal functional layer.

10. A vacuum coating device for plating an anti-fingerprint film, characterized in that, For implementing the vacuum coating method for coating an anti-fingerprint film as described in any one of claims 1 to 9, the vacuum coating equipment specifically includes: A vacuum chamber system, including an integrated vacuum chamber with a substrate transfer track disposed therein; A substrate processing assembly, including a fixture assembly and an 8-zone independently temperature-controlled substrate table; A plasma processing device, including a radio frequency / microwave dual-mode plasma generator, a rotating electric field assist module, and an on-line contact angle measuring instrument; A sputtering deposition device, including an adjustable magnetron sputtering target assembly, a high-power pulsed magnetron sputtering power supply, and an auxiliary plasma beam source; An intelligent control module, including a multi-sensor module and a gradient process parameter controller.

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