Glass through hole side wall metallization device and method

Abstract

The invention relates to a device and a method for metalizing a side wall of a glass through hole. The device comprises a CVD (Chemical Vapor Deposition) reaction chamber, a copper precursor gas prefabricating chamber communicated with the CVD reaction chamber, a light source system for providing a light source for the CVD reaction chamber, and a temperature control system, a gas conveying system, a control system and an in-situ optical monitoring system which are positioned in the CVD reaction chamber. The method comprises the following steps: sequentially carrying out ultrasonic cleaning and drying on a glass substrate with a TGV through hole; copper precursor gas, carrier gas and diluent gas are introduced into the CVD reaction chamber; adjusting temperature and light source parameters; the control system controls and adjusts related parameters to enable the copper film to reach the preset thickness; and sequentially closing the light source system, the temperature control system and the gas conveying system. Light irradiation with specific wavelength and intensity is introduced, copper precursor molecules in CVD reaction are excited, the activity and diffusivity of the copper precursor molecules are improved, the precursor is assisted to more efficiently and uniformly fill a TGV through hole with a high aspect ratio, and the problem of non-uniform filling of a copper film is solved.

Description

Technical Field

[0001] The present invention generally relates to the field of semiconductor packaging technology. The present invention relates to a device and method for metallizing the sidewalls of glass through-holes, and the present invention relates to a device and method for achieving high aspect ratio metallization of the sidewalls of glass through-holes based on photo-assisted CVD. Background Art

[0002] In today's semiconductor packaging field, the TGV (Through Glass Via) technology plays a crucial role in realizing three-dimensional integration and high-frequency and high-speed signal transmission. With the continuous development of electronic devices towards miniaturization and high performance, the requirements for the aspect ratio of TGV through-holes are becoming increasingly strict. However, traditional chemical vapor deposition (CVD) methods face a series of challenges when filling high aspect ratio TGV through-holes. The precursor gas diffusion is hindered in high aspect ratio holes, making it difficult to uniformly reach the bottom of the holes, resulting in incomplete filling and easy generation of voids. At the same time, the film growth rate is relatively low, unable to meet the high-efficiency requirements of industrial large-scale production. In addition, the quality of the copper thin film obtained by traditional CVD processes is unstable and the electrical properties are poor, which severely limits the further application of TGV technology in fields such as high-end chip packaging. Summary of the Invention

[0003] To at least partially solve the above problems in the prior art, the present invention provides a device and method for metallizing the sidewalls of TGV through-holes. Specifically, the present invention provides a device and method for achieving high aspect ratio metallization of the sidewalls of TGV through-holes based on photo-assisted CVD to fill a copper thin film with uniform thickness on the sidewalls of high aspect ratio TGV through-holes.

[0004] In a first aspect of the present invention, a device for metallizing the sidewalls of glass through-holes is provided, including:

[0005] A CVD reaction chamber for placing a glass substrate having TGV through-holes. The CVD reaction chamber is provided with an air inlet, and the CVD reaction chamber is the reaction site for metallizing the sidewalls of TGV through-holes;

[0006] A copper precursor gas prefabrication chamber for providing copper precursor gas to the CVD reaction chamber. The copper precursor gas prefabrication chamber is communicated with the CVD reaction chamber;

[0007] A light source system for providing a light source to the CVD reaction chamber, including a laser generator;

[0008] A temperature control system for heating the CVD reaction chamber. The temperature control system is located inside the CVD reaction chamber;

[0009] A gas delivery system, which is used to control the reaction atmosphere in the CVD reaction chamber and control the supply of the copper precursor gas, and the gas delivery system is arranged at the inlet;

[0010] A control system, including a controller, and the light source system, temperature control system and gas delivery system are electrically connected to the controller;

[0011] An in-situ optical monitoring system, which is used to collect the growth data of the copper thin film on the side wall of the TGV through-hole in real time, and the in-situ optical monitoring system is electrically connected to the control system.

[0012] Further, the controller is a PCL controller.

[0013] Further, the copper precursor gas includes countless copper precursor molecules.

[0014] Further, the CVD reaction chamber is also provided with an outlet for discharging waste gas; the inlet is used for introducing reaction gas.

[0015] Further, an optical window is provided on the CVD reaction chamber. The light source is introduced into the interior of the CVD reaction chamber through the optical window and irradiates on the TGV through-hole to provide energy for the copper precursor molecules.

[0016] Further, the optical window is made of a material with good optical properties, high temperature resistance and corrosion resistance, such as quartz glass.

[0017] Further, the light source system further includes a laser intensity adjustment device. The laser intensity adjustment device and the laser generator are electrically connected to the controller and are used to adjust the intensity and radiation wavelength of the light source.

[0018] Further, the laser generator is an ultraviolet laser or an excimer laser. More preferably, the laser generator is a solid-state ultraviolet laser or an excimer laser; the solid-state ultraviolet laser converts infrared laser into ultraviolet light through nonlinear optical frequency conversion technology; the excimer laser generates ultraviolet light pulses with a specific wavelength (300 - 500 nm) through stimulated emission of electron transitions.

[0019] Further, the laser intensity adjustment device is an acousto-optic modulator (AOM) or an electro-optic modulator (EOM). The AOM uses the acousto-optic effect to control the intensity of the light source by changing the frequency and amplitude of the driving signal; the EOM uses the electro-optic effect to change the optical properties of the crystal by applying an electric field, thereby adjusting the intensity of the light source.

[0020] Further, the gas delivery system includes components such as a gas storage tank, a gas flow meter, and valves. The gas delivery system is connected to the inlet of the CVD reaction chamber through a pipeline. The gas flow meter and the valves are electrically connected to the controller so that the controller can precisely control the gas flow rate and pressure to ensure the stable progress of the reaction in the CVD reaction chamber.

[0021] The gas delivery system is connected to the inlet of the CVD reaction chamber through a pipeline to precisely deliver the reaction gas into the reaction chamber. The pressure and gas flow rate in the reaction chamber are controlled by the valves and flow meters in the gas delivery system to ensure that the reaction proceeds under suitable atmosphere and conditions.

[0022] Further, the in-situ optical monitoring system includes a spectrometer and a microscope; the spectrometer includes a spectrometer probe which is electrically connected to the controller so that the spectrometer probe is close to the optical window of the CVD reaction chamber to collect the optical signals emitted during the growth of the thin film and to monitor the growth of the copper thin film in the CVD reaction chamber in real time. The microscope uses an objective lens to image the inside of the TGV vias through the optical window for observing the TGV vias and the growth of the copper thin film in the CVD reaction chamber. Specifically, the in-situ optical monitoring system transmits the growth data to the control system, and then the control system adjusts the light source system, the temperature control system, and the gas delivery system, that is, it adjusts parameters such as the radiation wavelength of the light source, the intensity of the light source, and the gas flow rate in real time to maintain a stable deposition process. For example, at the initial stage of copper thin film deposition, a lower light source intensity may be required. As the deposition progresses, according to the feedback of the in-situ optical monitoring system, the controller controls the gradual increase of the light source intensity to ensure the uniform growth of the copper thin film.

[0023] During the operation of the control system, the controller receives the information fed back by the in-situ optical monitoring system. After analysis and processing, the controller sends a control signal to the laser generator to adjust the parameters of the light source; the controller sends an instruction to the laser intensity adjustment device to change the intensity of the light source; the controller sends a control signal to the gas flow meter and valves of the gas delivery system to adjust the gas flow rate and pressure, thereby achieving precise control of the entire deposition process.

[0024] Further, the inner wall of the CVD reaction chamber is made of quartz, ceramic or metal materials; and / or

[0025] The radiation wavelength of the light source is 300 - 500 nm, the intensity of the light source is 50 - 150 mW / cm 2 ², and the irradiation angle of the light source is 0 - 90 °C; and / or

[0026] Between the light source system and the CVD reaction chamber, a shutter, a mirror group, and a focusing lens are sequentially provided along the light source incident direction; a filter mesh is also provided in the CVD reaction chamber along the light source incident direction; and / or

[0027] The temperature control system includes a temperature sensor, which is electrically connected to the in-situ optical monitoring system, and the temperature control accuracy of the temperature sensor is ±1°C.

[0028] The CVD reaction chamber is a place where chemical reactions occur and needs to be able to withstand high temperatures of 200 - 300°C. The shutter is connected to the laser generator, and the shutter controls the on and off of the light source; the mirror group is used to change the propagation direction of the light source so that the light source can accurately irradiate the focusing lens; the focusing lens focuses the light source to enhance the energy density of the light source on the glass substrate; the filter mesh filters out unnecessary stray light in the light source to ensure that the light source irradiating on the glass substrate has a specific wavelength and purity.

[0029] Furthermore, the quartz, ceramic, or metal material is heat-resistant, corrosion-resistant, and has stable chemical properties; the temperature tolerance of the quartz, ceramic, or metal material reaches above 500°C.

[0030] Furthermore, the mirror group includes an adjustment bracket and a mirror body provided on the adjustment bracket. The adjustment bracket can be adjusted electrically or manually to achieve precise adjustment of the angle of the mirror group. This method can flexibly adjust the irradiation angle of the light source without moving the light source itself, and is suitable for occasions with high requirements for the fixed position of the light source.

[0031] Furthermore, when adjusted electrically, the adjustment bracket is electrically connected to the controller.

[0032] Furthermore, the temperature control system further includes a heating device and a cooling device. The heating device and the cooling device are electrically connected to the controller.

[0033] Furthermore, it further includes:

[0034] A heating device, which is used to heat the copper precursor and is provided in the copper precursor gas prefabrication chamber;

[0035] A sample stage, which is used to place the glass substrate, and the sample stage is provided in the CVD reaction chamber;

[0036] A moving fixture, which is used to move the sample stage in three-dimensional directions. The moving fixture is provided on one side of the sample stage, and the moving fixture is electrically connected to the control system;

[0037] A pressure sensor, which is provided in the CVD reaction chamber and is electrically connected to the in-situ optical monitoring system;

[0038] A vacuum pump is disposed inside the CVD reaction chamber.

[0039] The heating device heats the copper precursor compound to obtain the copper precursor gas, and the vacuum pump is used to pump the copper precursor gas into the TGV through-hole, so that the copper precursor gas fills the entire TGV through-hole.

[0040] Further, the moving fixture is a Cartesian robot type moving fixture.

[0041] Further, the pressure control accuracy of the pressure sensor is ±1 Pa; and / or

[0042] The positioning accuracy of the moving fixture is ±0.01 mm, the gas flow control accuracy of the gas delivery system is ±0.1 sccm, and the monitoring accuracy of the in-situ optical monitoring system is ±0.1 nm.

[0043] Further, the positioning accuracy of the moving fixture, the gas flow control accuracy of the gas delivery system, the monitoring accuracy of the in-situ optical monitoring system, the temperature control accuracy and the pressure control accuracy of the pressure sensor are determined by the control system and the types of components included in each module and the cooperation between the components. The components are components on the market that can realize the functions of each module.

[0044] Further, the in-situ optical monitoring system tracks the growth status of the copper thin film in the through-hole in real time at a frequency of 1 - 5 times per second.

[0045] The second aspect of the present invention provides a method for metallizing the sidewall of a glass through-hole, the method comprising the following steps:

[0046] S1: Place the glass substrate with TGV through-holes in the CVD reaction chamber;

[0047] S2: Turn on the gas delivery system and introduce the copper precursor gas into the CVD reaction chamber;

[0048] S3: Start the light source system, irradiate the TGV through-holes, and deposit a copper thin film on the inner wall of the TGV through-holes.

[0049] Further, in step S1, it further includes: first, ultrasonically clean and dry the glass substrate with TGV through-holes. In the ultrasonic cleaning, the ultrasonic solvents are acetone, ethanol, and water in sequence, the ultrasonic frequency is 40 - 60 kHz, and the ultrasonic time in each ultrasonic solvent is 10 - 15 min; the drying is vacuum drying, the drying temperature is 60 - 80 °C, the drying time is 1 - 2 h, and the vacuum degree is 10 -2 -10 -3 Pa;

[0050] Set a preset growth curve for the copper thin film, and set the initial values of relevant parameters in the light source system, temperature control system, and gas delivery system according to the preset growth curve of the copper thin film.

[0051] Further, it further includes: S4: The control system controls and adjusts the relevant parameters based on the monitoring data of the in-situ optical monitoring system and compares with the preset growth curve of the copper thin film, so that the copper thin film on the inner wall of the TGV via hole reaches a predetermined thickness, and a filled glass substrate is obtained;

[0052] S5: Turn off the light source system, temperature control system, and gas delivery system in sequence. After the CVD reaction chamber cools to room temperature, take out the filled glass substrate to realize metallization of the side wall of the TGV via hole.

[0053] Further, the TGV via hole is a TGV via hole with a high aspect ratio, and its aspect ratio is (50:1).

[0054] Further, in step S1, the relevant parameters and their initial values are: the radiation wavelength of the light source is 300 - 500 nm, the intensity of the light source is 50 - 150 mW / cm 2 , the irradiation angle of the light source is 0 - 90 °C, the reaction temperature of the CVD reaction chamber is 200 - 300 °C, the pressure of the CVD reaction chamber is 20 - 40 Pa, the flow rate of the copper precursor gas is 8 - 15 sccm, the flow rate of the carrier gas is 70 - 90 sccm, and the flow rate of the dilution gas is 20 - 40 sccm.

[0055] Further preferably, in step S1, the relevant parameters and their initial values are: the radiation wavelength of the light source is 400 nm, the intensity of the light source is 100 mW / cm 2 , the irradiation angle of the light source is 45 °C, the reaction temperature of the CVD reaction chamber is 250 °C, the pressure of the CVD reaction chamber is 30 Pa, the flow rate of the copper precursor gas is 10 sccm, the flow rate of the carrier gas is 80 sccm, and the flow rate of the dilution gas is 30 sccm.

[0056] Further, in step S2, the copper precursor gas, carrier gas, and dilution gas are introduced into the CVD reaction chamber according to the initial values set in step S1. The copper precursor gas is copper hexafluoroacetylacetonate (Cu(hfac)2); the carrier gas is argon (Ar), and the dilution gas is nitrogen (N2). Argon is used as the carrier gas, mainly responsible for carrying Cu(hfac)2 into the CVD reaction chamber.

[0057] Further, the copper precursor gas includes countless copper precursor molecules.

[0058] Further, in step S3, start the temperature control system and adjust the reaction temperature of the CVD reaction chamber according to the initial value set in step S1. In the reaction temperature, the heating rate is 4 - 6 °C / min; and / or

[0059] In step S4, if the growth rate deviation of the copper film exceeds ±5% or the thickness uniformity deviation exceeds ±0.1 nm, the control system starts to adjust the gas delivery system, the light source system or the temperature and pressure control system to ensure uniform growth of the copper film; the predetermined thickness is 5 - 10 μm. The growth rate of the copper film is obtained from the actual growth curve of the copper film.

[0060] Further, the predetermined thickness is determined according to actual packaging requirements.

[0061] More preferably, in step S3, in the reaction temperature, the heating rate is 5 °C / min.

[0062] Further, in step S3, during the deposition process, the in-situ optical monitoring system tracks the growth status of the copper film in the through-hole in real time at a frequency of 1 - 5 times per second; more preferably, during the deposition process, the in-situ optical monitoring system collects the thin film growth data in the through-hole at a frequency of 3 times per second and transmits it to the control system.

[0063] Further, in step S4, if the growth rate is too slow, increase the flow rate of the copper precursor gas by 0.5 - 1 sccm; if the thickness uniformity is poor, fine-tune the illumination angle by ±5°.

[0064] Further, in step S5, during the cooling, the cooling rate is 5 °C / min.

[0065] The working principle of the method for metallizing the sidewall of the glass through-hole in the present invention is as follows:

[0066] In the photo-assisted CVD process, light with a specific wavelength (300 - 500 nm) emitted by the light source irradiates the inside of the TGV through-hole. Copper precursor molecules (such as Cu(hfac)2) absorb light energy and jump from the ground state to the excited state, and the molecular activity is greatly enhanced. The precursor molecules in the excited state move more violently, and the diffusion speed is accelerated, making it easier to penetrate to the bottom of the through-hole with a high aspect ratio. At the same time, in a high-temperature CVD reaction environment of 200 - 300 °C, the active copper precursor molecules collide with other reaction gases, decompose and undergo chemical reactions, and gradually deposit on the inner wall of the TGV through-hole to form a copper film. The in-situ optical monitoring system is like an "eye", feeding back the growth information in real time, and the control system adjusts the parameters in time like a "brain" to maintain a stable deposition process.

[0067] The present invention has at least the following beneficial effects: 1) The present invention introduces light irradiation with a specific wavelength and intensity to excite the copper precursor molecules in the CVD reaction, improve their activity and diffusion ability, and help the precursor to more efficiently and uniformly fill the high aspect ratio TGV vias, solving the problem of uneven copper thin film filling; 2) The present invention precisely regulates the coordinated operation of multiple parameters such as light radiation parameters, CVD reaction temperature, pressure, and gas flow rate to achieve high-quality and high-speed deposition of copper thin films, overcoming the drawback of slow growth rate in traditional processes; 3) The present invention is equipped with an in-situ optical monitoring system to continuously track the growth of copper thin films in TGV vias and adjust parameters in a timely manner according to the feedback to ensure the stable quality of the copper thin film layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0068] To further clarify the advantages and features of the embodiments of the present invention, a more specific description of the embodiments of the present invention will be presented with reference to the accompanying drawings. It can be understood that these drawings only depict typical embodiments of the present invention and will not be considered as a limitation of its scope. In the drawings, for clarity, the same or corresponding components will be denoted by the same or similar reference numerals.

[0069] Figure 1 Fig. shows an overall schematic diagram of the device for metallizing the sidewalls of TGV vias in an embodiment of the present invention;

[0070] Figure 2 Fig. shows a top view of a TGV via in an embodiment of the present invention;

[0071] Figure 3 Fig. shows a side view of a TGV via in an embodiment of the present invention;

[0072] Figure 4 Fig. shows a schematic diagram of the formation of a copper thin film filled on the sidewalls of a TGV via in an embodiment of the present invention.

[0073] Figure 5 Fig. shows the principle reaction formula of Cu(hfac)2 under light radiation in an embodiment of the present invention;

[0074] Figure 6 Fig. shows a side view of a TGV via after filling a copper thin film on its sidewalls in an embodiment of the present invention;

[0075] Reference Numerals:

[0076] 1 - CVD reaction chamber, 2 - copper precursor gas prefabrication chamber, 3 - light source system, 4 - control system, 5 - in-situ optical monitoring system, 6 - shutter, 7 - mirror group, 8 - focusing mirror, 9 - filter mesh, 10 - heating device, 11 - temperature control system, 12 - gas delivery system, 13 - inlet of the CVD reaction chamber, 14 - sample stage, 15 - glass substrate, 16 - moving fixture, 17 - pressure sensor, 18 - vacuum pump, 19 - TGV via hole, 20 - copper thin film. Detailed implementation manners

[0077] It should be noted that the components in the respective drawings may be exaggeratedly shown for illustrative purposes and are not necessarily to scale correctly. In the respective drawings, the same or functionally identical components are provided with the same reference numerals.

[0078] In the present invention, unless otherwise specified, "arranged on...", "arranged above...", and "arranged over..." do not exclude the situation where there are intermediate objects between the two. In addition, "arranged on or above..." only represents the relative positional relationship between two components, and in certain situations, such as after reversing the product direction, it can also be converted to "arranged under or below...", and vice versa.

[0079] In the present invention, each embodiment is only intended to illustrate the solution of the present invention and should not be construed as restrictive.

[0080] In the present invention, unless otherwise specified, the quantifiers "a" and "one" do not exclude the scenario of multiple elements.

[0081] It should also be noted here that in the embodiments of the present invention, for the sake of clarity and simplicity, only a part of the components or assemblies may be shown, but those of ordinary skill in the art can understand that, under the teaching of the present invention, the required components or assemblies can be added according to the specific scenario requirements. Additionally, unless otherwise stated, the features in different embodiments of the present invention can be combined with each other. For example, a certain feature in the second embodiment can be used to replace the corresponding or functionally identical or similar feature in the first embodiment, and the resulting embodiment also falls within the scope of the disclosure or the scope of the record of the present application.

[0082] It should also be noted here that within the scope of the present invention, the terms "identical", "equal", "equivalent", etc. do not mean that the two numerical values are absolutely equal, but allow for a certain reasonable error, that is, the said terms also cover "substantially identical", "substantially equal", "substantially equivalent". By analogy, in the present invention, the directional terms "perpendicular to", "parallel to", etc. also cover the meanings of "substantially perpendicular to" and "substantially parallel to".

[0083] In addition, the numbering of the steps of each method of the present invention does not limit the execution order of the method steps. Unless otherwise specified, the method steps can be executed in different orders.

[0084] In the following embodiments, the inner wall of the CVD reaction chamber is made of quartz material with high temperature resistance, corrosion resistance and stable chemical properties, and the quartz material can withstand temperatures above 500°C; the moving fixture is a Cartesian robot type moving fixture; the copper precursor gas is Cu(hfac)2; the carrier gas is argon, and argon as the carrier gas is mainly responsible for carrying Cu(hfac)2 into the CVD reaction chamber; the dilution gas is nitrogen, and nitrogen as the dilution gas can adjust the concentration of the mixed gas to ensure that the reaction proceeds under appropriate kinetic conditions; the laser generator is an excimer laser; the laser intensity adjustment device is an AOM or an EOM; the controller is a PCL controller.

[0085] The present invention will be further described below in conjunction with specific embodiments with reference to the accompanying drawings.

[0086] Figure 1 Fig. shows an overall schematic diagram of the device for metallizing the sidewall of the TGV via 19 in an embodiment of the present invention. It can be seen that the device includes: a CVD reaction chamber 1 for placing a glass substrate 15 with a TGV via 19, a copper precursor gas prefabrication chamber 2 communicated with the CVD reaction chamber 1, a light source system 3 for providing a light source for the CVD reaction chamber 1, a temperature control system 11 control system 4 located inside the CVD reaction chamber 1, a gas delivery system 12 provided at the gas inlet of the CVD reaction chamber 1, a control system 4, and an in-situ optical monitoring system 5. The CVD reaction chamber 1 is the reaction site for metallizing the sidewall of the TGV via 19. The CVD reaction chamber is provided with a gas inlet and a gas outlet. The gas inlet is used to introduce reaction gases, and the gas outlet is used to discharge waste gases. The CVD reaction chamber is provided with an optical window, and the light source is introduced into the interior of the CVD reaction chamber through the optical window and irradiates on the TGV via to provide energy for copper precursor molecules; the copper precursor gas prefabrication chamber 2 provides copper precursor gas for the CVD reaction chamber 1, the temperature control system 11 control system 4 is used to heat the CVD reaction chamber 1, the gas delivery system 12 is used to control the reaction atmosphere of the CVD reaction chamber 1 and control the supply of copper precursor gas, the in-situ optical monitoring system 5 collects the growth data of the copper thin film 20 on the sidewall of the TGV via 19 in real time at a frequency of 3 times per second, the control system 4 includes a controller electrically connected to the light source system 3, the temperature control system 11, the gas delivery system 12, and the in-situ optical monitoring system 5. The in-situ optical monitoring system 5 transmits the growth data of the copper thin film 20 to the control system 4, and then the control system 4 adjusts the light source system 3, the temperature control system 11 control system 4, and the gas delivery system 12.

[0087] The light source system 3 includes a laser generator and a laser intensity adjustment device. The laser intensity adjustment device and the laser generator are electrically connected to a controller, and are used to adjust the intensity and radiation wavelength of the light source. The temperature control system 11 includes a temperature sensor, a heating device, and a cooling device. The temperature sensor is electrically connected to the in-situ optical monitoring system, and the heating device and the cooling device are electrically connected to the controller. The temperature control accuracy of the temperature sensor is ±1°C. The gas delivery system 12 includes components such as a gas storage tank, a gas flow meter, and valves. The gas delivery system 12 is connected to the inlet of the CVD reaction chamber 1 through a pipeline. The gas flow meter and the valves are electrically connected to the controller, so that the controller can accurately control the flow rate and pressure of the gas to ensure the stable progress of the reaction in the CVD reaction chamber 1. The in-situ optical monitoring system 5 includes a spectrometer and a microscope. The spectrometer includes a spectrometer probe, and the spectrometer probe is electrically connected to the controller, so that the spectrometer probe is close to the optical window of the CVD reaction chamber 1 to collect the optical signals emitted during the growth of the thin film, and to monitor the growth of the copper thin film 20 in the reaction chamber in real time. The microscope uses an objective lens to image the inside of the TGV via hole 19 through the optical window, so as to observe the growth of the TGV via hole and the copper thin film 20 in the CVD reaction chamber 1.

[0088] In the light source system 3, the radiation wavelength of the light source is 300 - 500 nm, the intensity of the light source is 50 - 150 mW / cm 2 , and the irradiation angle of the light source is 0 - 90°C. In addition, between the light source system 3 and the CVD reaction chamber 1, a shutter 6, a mirror group 7, and a focusing lens 8 are sequentially provided along the incident direction of the light source; inside the CVD reaction chamber 1, a filter mesh 9 is also provided along the incident direction of the light source. The shutter 6 is connected to the laser generator and is used to control the on / off of the light source. The mirror group 7 is used to change the propagation direction of the light source so that the light source can accurately irradiate the focusing lens 8; the focusing lens 8 focuses the light source to enhance the energy density of the light source on the glass substrate 15; the filter mesh 9 filters out the unnecessary stray light in the light source to ensure the wavelength and purity of the light source irradiated on the glass substrate 15. The mirror group 7 includes an adjustment bracket and a mirror body provided on the adjustment bracket, and is used to change the propagation direction of the light source so that the light source can accurately irradiate the focusing lens 8, and manual adjustment can be used to achieve precise adjustment of the angle of the mirror group. The focusing lens 8 focuses the light source to enhance the energy density of the light source on the glass substrate 15; the filter mesh 9 filters out the unnecessary stray light in the light source to ensure that the light source irradiated on the glass substrate 15 has a specific wavelength and purity.

[0089] The device for metallizing the sidewalls of the TGV vias 19 further includes: a heating device 10 disposed in the copper precursor gas prefabrication chamber 2, a sample stage 14 disposed in the CVD reaction chamber 1, a moving fixture 16 disposed on one side of the sample stage 14, a pressure sensor 17 disposed in the CVD reaction chamber 1, and a vacuum pump 18. The heating device 10 is used to heat the copper precursor, the sample stage 14 is used to place the glass substrate 15, the moving fixture 16 is electrically connected to the control system 4 and is used to move the sample stage 14 in three-dimensional directions, and the pressure sensor 17 is electrically connected to the in-situ optical monitoring system 5. The heating device 10 heats the copper precursor compound to obtain the copper precursor gas, and the vacuum pump 18 is used to pump the copper precursor gas into the TGV vias so that the copper precursor gas fills the entire TGV vias. The pressure control accuracy of the pressure sensor 17 is ±1 Pa, the positioning accuracy of the moving fixture 16 is ±0.01 mm, the gas flow control accuracy of the gas delivery system 12 is ±0.1 sccm, and the monitoring accuracy of the in-situ optical monitoring system 5 is ±0.1 nm. In some embodiments, the method for metallizing the sidewalls of the TGV vias 19 includes the following steps:

[0090] 1. Preparation stage:

[0091] The glass substrate 15 with the high aspect ratio (50:1) TGV vias 19 is successively ultrasonically cleaned in acetone, ethanol, and deionized water. The ultrasonic frequency is 40 - 60 kHz, and each cleaning is for 10 - 15 min to remove surface impurities and ensure the surface is clean. Subsequently, the glass substrate 15 is placed in a vacuum drying oven and dried at 60 - 80 °C and a vacuum degree of 10 -2 -10 -3 Pa for 1 - 2 h. After drying, it is placed on the sample stage 14 in the CVD reaction chamber 1.

[0092] Check and calibrate the light source system 3, the temperature control system 11, the control system 4, and the gas delivery system 12. Set the initial light radiation wavelength to 400 nm, the intensity to 100 mW / cm 2 ², the light irradiation angle to 45°, the reaction temperature to 250 °C, the pressure to 30 Pa, the copper precursor gas flow rate to 10 sccm, the carrier gas flow rate to 80 sccm, and the dilution gas flow rate to 30 sccm.

[0093] 2. Deposition stage:

[0094] Turn on the gas delivery system 12 and introduce the copper precursor gas, the carrier gas, and the dilution gas in a predetermined ratio (the set initial value) to make the pressure in the CVD reaction chamber 1 reach the set pressure of 30 Pa to create a reaction atmosphere.

[0095] Start the temperature control system 11 to control system 4, and increase the temperature of the CVD reaction chamber 1 at a heating rate of 5 °C / min to the target temperature of 250 °C. After stabilizing for 15 - 20 min, turn on the light source system 3 and irradiate the TGV vias 19 being deposited with a preset light intensity of 100 mW / cm 2 and a wavelength of 400 nm.

[0096] During the deposition process, the in-situ optical monitoring system 5 collects the thin film growth data inside the vias in real-time at a frequency of 3 times per second and transmits it to the control system 4.

[0097] 3. Regulation and Completion Stage:

[0098] Based on the monitoring data, the control system 4 compares with the preset growth curve. When the deviation of the thin film growth rate exceeds ±5% or the deviation of the thickness uniformity exceeds ±0.1 nm, adjust parameters such as gas flow rate and light intensity in a timely manner to ensure the uniform growth of the copper thin film 20. For example, if the growth rate is too slow, appropriately increase the copper precursor gas flow rate by 0.5 - 1 sccm; if the thickness uniformity is not good, finely adjust the light angle by ±5°.

[0099] When it is monitored that the copper thin film 20 in the TGV via 19 reaches the predetermined thickness (5 - 10 μm, determined according to the actual packaging requirements), turn off the light source, the temperature control system 11 to control system 4 and the gas delivery system 12 in sequence. After the CVD reaction chamber 1 cools to room temperature at a cooling rate of 5 °C / min, take out the filled glass substrate 15 to realize the metallization of the sidewalls of the TGV via 19. Figure 4 Shows a schematic diagram of the formation of the copper thin film 20 filled on the sidewalls of the TGV via 19 in an embodiment of the present invention. It can be seen that the sidewalls of the TGV via 19 are uniformly and highly quality filled with the excellent performance copper thin film 20.

[0100] Figure 2 Shows a top view of the TGV via 19, Figure 3 Shows a side view of the TGV via 19, Figure 6 Shows a side view of the TGV via 19 after the sidewalls are filled with the copper thin film 20 (shaded area). It can be seen that after using the method for metallizing the sidewalls of the TGV via 19 in the present invention, the copper thin film 20 is uniformly distributed on the sidewalls of the TGV via 19. In addition, compared with the traditional chemical vapor deposition method, after using the method for metallizing the sidewalls of the TGV via 19 in the present invention, the void filling rate of the copper thin film 20 is reduced by 50% compared with the traditional chemical vapor deposition method (5% - 20%), the product yield is increased from the chemical vapor deposition method (70%) to 90%, the deviation of the thickness uniformity of the copper thin film 20 can be controlled within ±0.μm, and the electrical performance stability is improved by 30%.

[0101] Figure 5The principle reaction formula of the photo-radiation of Cu(hfac)2 in an embodiment of the present invention is shown. During the photo-assisted CVD process, light with a specific wavelength (400 nm) emitted by the light source irradiates the inside of the TGV via hole 19. Cu(hfac)2 absorbs the light energy and jumps from the ground state to the excited state, and the molecular activity is greatly enhanced. The precursor molecules in the excited state move more intensively and the diffusion rate is accelerated, making it easier to penetrate to the bottom of the via hole with a high aspect ratio. At the same time, in the high-temperature CVD reaction environment at 250 °C, the copper precursor molecules with enhanced activity collide with other reaction gases, undergo decomposition and chemical reactions, and gradually deposit on the inner wall of the TGV via hole 19 to form a copper thin film 20. The in-situ optical monitoring system 5 is like an "eye" that provides real-time feedback on the growth information, and the control system 4 adjusts the parameters in a timely manner like a "brain" to maintain a stable deposition process.

[0102] In the above embodiment, light-assisted CVD is used to achieve the process of filling the copper film 20 on the side wall of the TGV through hole 19, Cu(hfac)2 is used as a copper precursor compound, argon is used as a carrier gas, and nitrogen is used as a diluent gas. First, the pre-treated glass substrate 15 with the TGV through hole 19 is placed in the CVD reaction chamber 1. In the reaction preparation stage, argon is used as a carrier gas and nitrogen is used as a diluent gas, which are continuously introduced into the CVD reaction chamber 1 to replace and discharge impurity gases such as air in the CVD reaction chamber 1, creating a pure and stable reaction atmosphere. When a stable gas environment is reached, the temperature control system 4 is started to gradually increase the temperature of the CVD reaction chamber 1 to 250°C. In this high temperature environment, Cu(hfac)2 is vaporized, and the vaporized copper precursor molecules are mixed into the airflow of the carrier gas and the diluent gas, diffuse in the reaction chamber with the airflow, and are transmitted to the inside of the TGV through hole 19. Next, the light source system 3 is turned on to emit a light source with a wavelength of 400nm. Light is precisely irradiated into the interior of the TGV through-hole 19 through the optical window. At this time, the excited Cu(hfac)2 absorbs light energy and transitions from the ground state to the excited state, and the molecular activity is greatly improved. The motion of the excited precursor molecules intensifies, and their diffusion speed is significantly accelerated, which enables them to penetrate into the bottom of the high aspect ratio TGV through-hole 19 more efficiently. Under the dual effects of the high-temperature CVD reaction environment and light excitation, the activity-enhanced Cu(hfac)2 frequently collides with other reaction gases (such as trace impurities in the carrier gas argon and the dilution gas nitrogen). During the collision process, the copper precursor molecules decompose and chemically react, and gradually deposit on the inner wall surface of the TGV through-hole 19 to form copper atoms. As the reaction continues, copper atoms continue to accumulate, gradually forming a continuous and dense copper film 20. During the entire deposition process, the in-situ optical monitoring system 5 plays a role in real time. For example, the spectrometer collects the optical signal in the reaction chamber in real time and analyzes the composition changes, deposition rate and other information during the growth of the copper film 20; the microscope directly observes the growth state of the copper film 20 inside the TGV through hole 19 through the optical window, such as the uniformity of the film and whether there are defects. These monitoring data are fed back to the control system 4 in real time. The control system 4 is like the "brain" of the entire device. After receiving the growth information from the in-situ optical monitoring system 5, it quickly analyzes and processes it. According to the analysis results, the control system 4 promptly adjusts the parameters of the light source system 3, the gas delivery system and the temperature control system 4.For example, if the in-situ optical monitoring system 5 feeds back that the growth rate of the copper thin film 20 is too fast or too slow in certain areas, the control system 4 will adjust the intensity of the light source or the irradiation angle of the light source to optimize the excitation efficiency of the copper precursor molecules; if a deviation in the reaction gas concentration is detected, the control system 4 will adjust the flow rates of the carrier gas and the dilution gas in the gas delivery system to ensure that the reaction is always in the best state, thereby maintaining a stable copper thin film 20 deposition process until the sidewalls of the TGV vias 19 are uniformly and highly quality filled with the excellent performance copper thin film 20.

[0103] In the above embodiments, the optical assistance means breaks through the limitations of traditional CVD precursor diffusion. Experimental data shows that the filling integrity of the high aspect ratio TGV vias has been greatly improved compared to traditional CVD, effectively solving the void problem and significantly improving the product yield. The combination of multi-parameter collaborative optimization and the in-situ monitoring feedback mechanism not only increases the growth rate of the copper thin film but also controls the deviation of the film thickness uniformity within an extremely small range, ensuring stable electrical performance and meeting the stringent requirements of high-end packaging. Compared with similar technologies that add additional complex physical assistance means, the present invention relies only on optical assistance, has a low equipment complexity, controllable costs, and greater potential for industrial promotion. After cost accounting, the equipment cost of this technology is reduced by 30%-50% compared to similar complex assistance technologies and has a wide range of application prospects.

[0104] Although the embodiments of the present invention have been described above, it should be understood that they are presented only as examples and not as limitations. It will be apparent to those skilled in the relevant art that various combinations, variations, and changes can be made without departing from the spirit and scope of the present invention. Therefore, the width and scope of the present invention disclosed herein should not be limited by the exemplary embodiments disclosed above, but should be defined only by the appended claims and their equivalents.

Claims

1. An apparatus for metallizing the sidewalls of glass vias, characterized in that, Including: A CVD reaction chamber for placing a glass substrate with TGV vias, the CVD reaction chamber being provided with an inlet and an outlet; A copper precursor gas prefabrication chamber for providing copper precursor gas to the CVD reaction chamber, the copper precursor gas prefabrication chamber being connected to the CVD reaction chamber; A light source system for providing a light source to the CVD reaction chamber, including a laser generator; A temperature control system for heating the CVD reaction chamber, the temperature control system being located inside the CVD reaction chamber; A gas delivery system for controlling the reaction atmosphere in the CVD reaction chamber and controlling the supply of the copper precursor gas, the gas delivery system being provided at the inlet; A control system including a controller, the light source system, the temperature control system, and the gas delivery system being electrically connected to the controller; An in-situ optical monitoring system for real-time collecting copper thin film growth data on the sidewalls of the TGV vias, the in-situ optical monitoring system being electrically connected to the control system.

2. The device for metallizing the sidewall of the glass through-hole according to claim 1, characterized in that The inner wall of the CVD reaction chamber is made of quartz, ceramic, or metal materials; and / or The radiation wavelength of the light source is 300 - 500 nm, and the intensity of the light source is 50 - 150 mW / cm 2 , and the irradiation angle of the light source is 0 - 90 °C; and / or Between the light source system and the CVD reaction chamber, a shutter, a mirror group, and a focusing lens are sequentially provided along the light incident direction; inside the CVD reaction chamber, a filter screen is also provided along the light incident direction; and / or The temperature control system includes a temperature sensor, the temperature sensor being electrically connected to the in-situ optical monitoring system, and the temperature control accuracy of the temperature sensor being ±1°C.

3. The device for metallizing the side wall of the glass through hole according to claim 1, wherein Also included: A heating device for heating the copper precursor, provided inside the copper precursor gas prefabrication chamber; A sample stage for placing the glass substrate, the sample stage being provided inside the CVD reaction chamber; A moving fixture for moving the sample stage in three-dimensional directions, the moving fixture being provided on one side of the sample stage, the moving fixture being electrically connected to the control system; A pressure sensor provided inside the CVD reaction chamber, electrically connected to the in-situ optical monitoring system; A vacuum pump provided inside the CVD reaction chamber.

4. The device for metallizing the side wall of the glass through hole according to claim 3, wherein, The pressure control accuracy of the pressure sensor is ±1 Pa; and / or The positioning accuracy of the moving fixture is ±0.01 mm, the gas flow control accuracy of the gas delivery system is ±0.1 sccm, and the monitoring accuracy of the in-situ optical monitoring system is ±0.1 nm.

5. A method for metallizing the sidewall of a glass through-hole, characterized in that, This method includes the following steps: S1: Place the glass substrate with TGV vias inside the CVD reaction chamber; S2: Turn on the gas delivery system and introduce copper precursor gas into the CVD reaction chamber; S3: Start the light source system to irradiate the TGV vias and deposit a copper thin film on the inner walls of the TGV vias.

6. The method for metallizing side walls of glass through holes according to claim 5, characterized in that, Step S1 further includes: first, ultrasonically cleaning and drying the glass substrate with TGV vias. In the ultrasonic cleaning, the ultrasonic solvents are acetone, ethanol, and water in sequence, the ultrasonic frequency is 40 - 60 kHz, and the ultrasonic time in each ultrasonic solvent is 10 - 15 min; the drying is vacuum drying, the drying temperature is 60 - 80 °C, the drying time is 1 - 2 h, and the vacuum degree is 10 -2 -10 -3 Pa; Set a preset growth curve for the copper thin film and set initial values of relevant parameters in the light source system, the temperature control system, and the gas delivery system according to the preset growth curve of the copper thin film.

7. The method for metallizing the sidewall of the glass through hole according to claim 6, characterized in that, Also included: S4: The control system controls and adjusts the relevant parameters based on the monitoring data of the in-situ optical monitoring system and compares with the preset growth curve of the copper thin film, so that the copper thin film on the inner walls of the TGV vias reaches a predetermined thickness, and a filled glass substrate is obtained; S5: shutting down the light source system, the temperature control system and the gas delivery system in sequence, and taking out the filled glass substrate after the CVD reaction chamber is cooled to room temperature, so as to achieve metallization of the side wall of the TGV through hole.

8. The method for metallizing the sidewall of a glass through hole according to claim 7, wherein In step S1, the relevant parameters and their initial values are as follows: the radiation wavelength of the light source is 300 - 500 nm, the intensity of the light source is 50 - 150 mW / cm 2 , the irradiation angle of the light source is 0 - 90 °C, the reaction temperature of the CVD reaction chamber is 200 - 300 °C, the pressure of the CVD reaction chamber is 20 - 40 Pa, the flow rate of the copper precursor gas is 8 - 15 sccm, the flow rate of the carrier gas is 70 - 90 sccm, and the flow rate of the dilution gas is 20 - 40 sccm.

9. The method for metallizing the sidewall of a glass through hole according to claim 5, wherein In step S2, copper precursor gas, carrier gas and dilution gas are introduced into the CVD reaction chamber according to the initial values set in step S1, the copper precursor gas is Cu(hfac)2; the carrier gas is argon, and the dilution gas is nitrogen.

10. The method for metallizing the sidewall of a glass through hole according to claim 5, wherein, In step S3, the temperature control system is started to adjust the reaction temperature of the CVD reaction chamber according to the initial value set in step S1, wherein the reaction temperature has a heating rate of 4-6°C / min; and / or In step S4, if the growth rate deviation of the copper film exceeds ±5% or the thickness uniformity deviation exceeds ±0.1nm, the control system begins to adjust the gas delivery system, light source system or temperature and pressure control system to ensure uniform growth of the copper film; the predetermined thickness is 5-10μm.

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