Gallium nitride ultraviolet partial discharge sensor system, control method thereof, medium and equipment

Abstract

The invention discloses a gallium nitride ultraviolet partial discharge sensor system, a control method thereof, a medium and equipment, and relates to the technical field of gallium nitride ultraviolet partial discharge sensors. The gallium nitride ultraviolet partial discharge sensor system comprises a gallium nitride ultraviolet partial discharge sensor and a rear-end calculation circuit. The method comprises the following steps: acquiring an output voltage of the gallium nitride ultraviolet partial discharge sensor; the output voltage is compared with a preset voltage threshold value, the preset voltage threshold value is a threshold value obtained according to a baseline voltage, and the baseline voltage is a voltage output by the gallium nitride ultraviolet partial discharge sensor when no input signal exists; and when the output voltage is smaller than or equal to the preset voltage threshold value and the rear-end calculation circuit has no calculation task, controlling the rear-end calculation circuit to enter a low-power-consumption sleep mode. Therefore, the power consumption of the gallium nitride ultraviolet partial discharge sensor system can be reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of gallium nitride ultraviolet partial discharge sensors, and particularly to a gallium nitride ultraviolet partial discharge sensor system, its control method, medium, and device. Background Art

[0002] Partial discharge refers to the local charge discharge phenomenon in high-voltage electrical equipment due to excessive electric field intensity or internal defects. It can change the structure of insulating materials, reduce the insulation performance of materials, thereby affecting the normal operation of equipment and even causing safety accidents. Therefore, it is of great significance to detect partial discharge using a gallium nitride ultraviolet partial discharge sensor.

[0003] However, the related gallium nitride ultraviolet partial discharge sensor system based on gallium nitride includes a gallium nitride ultraviolet partial discharge sensor unit and a backend computing circuit, and usually adopts a continuous working mode. The gallium nitride ultraviolet partial discharge sensor unit includes a gallium nitride ultraviolet partial discharge sensor, and the backend computing circuit includes a signal amplification module, an ADC (Analog-to-Digital Converter), a DSP (Digital Signal Processor) / FPGA (Field Programmable Gate Array), etc. To ensure the detection ability of the gallium nitride ultraviolet partial discharge sensor system, the gallium nitride ultraviolet partial discharge sensor unit and the backend computing circuit are always in a full-time working state, and the power consumption of the backend computing circuit is as high as 200 mW, resulting in excessive power consumption of the gallium nitride ultraviolet partial discharge sensor system. This limits the application of the gallium nitride ultraviolet partial discharge sensor system in remote monitoring or battery-powered scenarios. Summary of the Invention

[0004] The present invention aims to at least solve one of the technical problems in the related art to some extent. For this purpose, the first object of the present invention is to propose a control method for a gallium nitride ultraviolet partial discharge sensor system to reduce the power consumption of the gallium nitride ultraviolet partial discharge sensor system.

[0005] The second object of the present invention is to propose a computer-readable storage medium.

[0006] The third object of the present invention is to propose an electronic device.

[0007] The fourth object of the present invention is to propose a gallium nitride ultraviolet partial discharge sensor system.

[0008] To achieve the above object, an embodiment of the first aspect of the present invention provides a control method for a gallium nitride ultraviolet partial discharge sensor system. The gallium nitride ultraviolet partial discharge sensor system includes a gallium nitride ultraviolet partial discharge sensor and a backend computing circuit. The method includes: obtaining the output voltage of the gallium nitride ultraviolet partial discharge sensor; comparing the output voltage with a preset voltage threshold, where the preset voltage threshold is a threshold obtained based on a baseline voltage, and the baseline voltage is the voltage output by the gallium nitride ultraviolet partial discharge sensor when there is no input signal; when the output voltage is less than or equal to the preset voltage threshold and the backend computing circuit has no computing task, controlling the backend computing circuit to enter a low-power sleep mode.

[0009] In addition, the control method for the gallium nitride ultraviolet partial discharge sensor system according to the embodiment of the present invention may further have the following additional technical features: According to an embodiment of the present invention, the method further includes: when the output voltage is greater than the preset voltage threshold and the backend computing circuit is in the low-power sleep mode, controlling the backend computing circuit to exit the low-power sleep mode.

[0010] According to an embodiment of the present invention, when the backend computing circuit is in the low-power sleep mode, the method further includes: controlling the backend computing circuit to exit the low-power sleep mode every preset time so that the backend computing circuit can perform performance detection on the gallium nitride ultraviolet partial discharge sensor.

[0011] According to an embodiment of the present invention, performing performance detection on the gallium nitride ultraviolet partial discharge sensor includes performing time drift calculation and temperature drift calculation on the gallium nitride ultraviolet partial discharge sensor.

[0012] According to an embodiment of the present invention, the preset voltage threshold is obtained according to the following formula: Vth = Vb + k × σnoise, where Vth is the preset voltage threshold, Vb is the baseline voltage, k is a preset coefficient, and σnoise is the noise voltage, and the noise voltage is the voltage output by the gallium nitride ultraviolet partial discharge sensor in response to the environmental noise in the environment where the gallium nitride ultraviolet partial discharge sensor is located.

[0013] According to an embodiment of the present invention, the method for determining the preset time includes: obtaining the historical occurrence frequency of partial discharge events in the monitoring area of the gallium nitride ultraviolet partial discharge sensor; determining the preset time according to the historical occurrence frequency.

[0014] According to an embodiment of the present invention, the method for determining the preset time includes: predicting the occurrence probability of a partial discharge event in the monitoring area of the gallium nitride ultraviolet partial discharge sensor; and determining the preset time according to the occurrence probability.

[0015] To achieve the above object, an embodiment of the second aspect of the present invention provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the above-mentioned control method for the gallium nitride ultraviolet partial discharge sensor system is implemented.

[0016] To achieve the above object, an embodiment of the third aspect of the present invention provides an electronic device, including a memory, a processor, and a computer program stored on the memory and running on the processor. When the computer program is executed by the processor, the above-mentioned control method for the gallium nitride ultraviolet partial discharge sensor system is implemented.

[0017] To achieve the above object, an embodiment of the fourth aspect of the present invention provides a gallium nitride ultraviolet partial discharge sensor system, including the above-mentioned electronic device.

[0018] According to the gallium nitride ultraviolet partial discharge sensor system and its control method, storage medium, and electronic device according to the embodiments of the present invention, the output voltage of the gallium nitride ultraviolet partial discharge sensor is obtained; the output voltage is compared with a preset voltage threshold, where the preset voltage threshold is a threshold obtained according to the baseline voltage; when the output voltage is less than or equal to the preset voltage threshold and the backend calculation circuit has no calculation task, the backend calculation circuit is controlled to enter the low-power sleep mode. Thus, by controlling the backend calculation circuit to enter the low-power sleep mode when there is no input signal, the power consumption of the gallium nitride ultraviolet partial discharge sensor system is reduced.

[0019] Additional aspects and advantages of the present invention will be given in part in the following description, become apparent in part from the following description, or be learned through the practice of the present invention. Description of the Drawings

[0020] Figure 1 is a flowchart of the control method for the gallium nitride ultraviolet partial discharge sensor system according to the embodiment of the present invention; Figure 2 is a schematic flowchart of the control method for the gallium nitride ultraviolet partial discharge sensor system according to an example of the present invention; Figure 3 is a schematic flowchart of the control method for the gallium nitride ultraviolet partial discharge sensor system according to another example of the present invention; Figure 4 is a block diagram of the structure of the electronic device according to the embodiment of the present invention; Figure 5 is a block diagram of the structure of the gallium nitride ultraviolet partial discharge sensor system according to the embodiment of the present invention. Detailed Embodiments

[0021] The following describes the gallium nitride ultraviolet partial discharge sensor system and its control method, medium, and device according to the embodiments of the present invention with reference to the accompanying drawings, where the same or similar reference numerals represent the same or similar elements or elements with the same or similar functions throughout. The embodiments described with reference to the accompanying drawings are exemplary and should not be construed as limiting the present invention.

[0022] Figure 1 It is a flowchart of the control method for the gallium nitride ultraviolet partial discharge sensor system according to the embodiments of the present invention.

[0023] In the embodiments of the present invention, the gallium nitride ultraviolet partial discharge sensor system includes a gallium nitride ultraviolet partial discharge sensor and a backend computing circuit.

[0024] As Figure 1 shown, the control method for the gallium nitride ultraviolet partial discharge sensor system includes: S11, obtaining the output voltage of the gallium nitride ultraviolet partial discharge sensor.

[0025] Specifically, the above-mentioned gallium nitride ultraviolet partial discharge sensor system includes a gallium nitride ultraviolet partial discharge sensor and a backend computing circuit. The gallium nitride ultraviolet partial discharge sensor is used for detection and outputs a voltage. The backend computing circuit includes a signal amplification module, an ADC, a DSP / FPGA, etc., and is used to calculate the output voltage of the gallium nitride ultraviolet partial discharge sensor to obtain a detection result. Therefore, the output voltage of the gallium nitride ultraviolet partial discharge sensor can be directly obtained, and the acquisition of the output voltage of the gallium nitride ultraviolet partial discharge sensor can be obtained in real time or at preset time intervals.

[0026] S12, comparing the output voltage with a preset voltage threshold, where the preset voltage threshold is a threshold obtained based on the baseline voltage, and the baseline voltage is the voltage output by the gallium nitride ultraviolet partial discharge sensor when there is no input signal.

[0027] Specifically, in order to make a judgment based on the output voltage, it is necessary to first obtain the baseline voltage of the gallium nitride ultraviolet partial discharge sensor. The above-mentioned baseline voltage refers to the output voltage of the gallium nitride ultraviolet partial discharge sensor without an input signal. For example, assuming the above-mentioned gallium nitride ultraviolet partial discharge sensor is a gallium nitride ultraviolet partial discharge sensor, then the input signal of this gallium nitride ultraviolet partial discharge sensor is ultraviolet light irradiation. That is to say, the baseline voltage of this gallium nitride ultraviolet partial discharge sensor refers to the output voltage of this gallium nitride ultraviolet partial discharge sensor without ultraviolet light irradiation.

[0028] Since the baseline voltage refers to the output voltage of the gallium nitride ultraviolet partial discharge sensor when there is no input signal, and if the gallium nitride ultraviolet partial discharge sensor receives an input signal, the output voltage of the gallium nitride ultraviolet partial discharge sensor will increase. At the same time, due to the fact that the output voltage of the gallium nitride ultraviolet partial discharge sensor will fluctuate, that is, the output voltage of the gallium nitride ultraviolet partial discharge sensor without an input signal in real time is not absolutely fixed, and the baseline voltage obtained at a certain moment is not always consistent with the output voltage of the gallium nitride ultraviolet partial discharge sensor without an input signal. Therefore, a preset voltage threshold is set based on the baseline voltage to exclude the influence of the output voltage fluctuation of the gallium nitride ultraviolet partial discharge sensor on subsequent judgments.

[0029] After obtaining the preset voltage threshold and acquiring the output voltage of the gallium nitride ultraviolet partial discharge sensor, the output voltage of the gallium nitride ultraviolet partial discharge sensor can be compared with the preset voltage threshold, and the current state of the gallium nitride ultraviolet partial discharge sensor can be judged according to the comparison result.

[0030] S13, when the output voltage is less than or equal to the preset voltage threshold and the backend computing circuit has no computing task, control the backend computing circuit to enter the low-power sleep mode.

[0031] Specifically, if the output voltage is less than or equal to the preset voltage threshold, it means that there is no input signal input to the gallium nitride ultraviolet partial discharge sensor at present. If the above gallium nitride ultraviolet partial discharge sensor is the gallium nitride ultraviolet partial discharge sensor, it means that there is no ultraviolet light irradiating the gallium nitride ultraviolet partial discharge sensor at present, that is, there is no suspected partial discharge situation in the detection area of the gallium nitride ultraviolet partial discharge sensor. At this time, if the backend computing circuit has no computing task, the backend computing circuit can be made to enter the low-power sleep mode, and only the gallium nitride ultraviolet partial discharge sensor is kept working to reduce power consumption.

[0032] Therefore, set to obtain the output voltage of the gallium nitride ultraviolet partial discharge sensor; compare the output voltage with the preset voltage threshold, where the preset voltage threshold is the threshold obtained based on the baseline voltage; when the output voltage is less than or equal to the preset voltage threshold and the backend computing circuit has no computing task, control the backend computing circuit to enter the low-power sleep mode. By this method, the power consumption of the gallium nitride ultraviolet partial discharge sensor system is reduced.

[0033] In some embodiments of the present invention, the control method of the gallium nitride ultraviolet partial discharge sensor system further includes: when the output voltage is greater than the preset voltage threshold and the backend computing circuit is in the low-power sleep mode, control the backend computing circuit to exit the low-power sleep mode.

[0034] Specifically, when the backend computing circuit is in the low-power sleep mode, if the output voltage of the gallium nitride ultraviolet partial discharge sensor is greater than the preset voltage threshold, it can be considered that there is an input signal entering the gallium nitride ultraviolet partial discharge sensor at present. If the gallium nitride ultraviolet partial discharge sensor is a gallium nitride ultraviolet partial discharge sensor, it means that ultraviolet light irradiates the gallium nitride ultraviolet partial discharge sensor, that is, local discharge is suspected to occur in the detection area of the gallium nitride ultraviolet partial discharge sensor. The backend computing circuit exits the low-power sleep mode and performs calculations to determine whether local discharge actually occurs.

[0035] It can be seen that by setting only the backend computing circuit in the gallium nitride ultraviolet partial discharge sensor system to sleep and the gallium nitride ultraviolet partial discharge sensor in the gallium nitride ultraviolet partial discharge sensor system not to sleep, it is possible to reduce the power consumption of the gallium nitride ultraviolet partial discharge sensor system while preventing an impact on detection.

[0036] In some embodiments of the present invention, when the backend computing circuit is in the low-power sleep mode, the control method of the gallium nitride ultraviolet partial discharge sensor system further includes: at every preset time, controlling the backend computing circuit to exit the low-power sleep mode so that the backend computing circuit performs performance detection on the gallium nitride ultraviolet partial discharge sensor.

[0037] Specifically, in order to prevent the error accumulation during the operation of the gallium nitride ultraviolet partial discharge sensor or the aging of the gallium nitride ultraviolet partial discharge sensor from affecting the detection, it is necessary to control the backend computing circuit to perform performance detection on the gallium nitride ultraviolet partial discharge sensor at every preset time to offset the influence of the error accumulation or the aging of the gallium nitride ultraviolet partial discharge sensor on the gallium nitride ultraviolet partial discharge sensor.

[0038] The following is described in conjunction with Figure 2 the specific embodiments shown. In this specific embodiment, the above-mentioned gallium nitride ultraviolet partial discharge sensor is a gallium nitride ultraviolet partial discharge sensor, and in this specific embodiment, in order to simulate the ultraviolet light generated by local discharge, an ultraviolet light source with a frequency of 10 kHz and a power of 8 μW is set, and this ultraviolet light source will irradiate the gallium nitride ultraviolet partial discharge sensor at a preset moment.

[0039] Specifically, baseline detection is continuously performed, and the detected output is compared with the dynamic threshold. This baseline detection refers to detection using the above-mentioned baseline voltage, this output refers to the above-mentioned output voltage, and this dynamic threshold refers to the above-mentioned preset voltage threshold.

[0040] When at a certain moment, the output voltage is greater than the preset voltage threshold, it indicates that the above-mentioned ultraviolet light source irradiates the gallium nitride ultraviolet partial discharge sensor. The backend computing circuit exits the low-power sleep mode, and the computing module in the backend computing circuit calculates the output voltage of the gallium nitride ultraviolet partial discharge sensor and performs data processing according to the calculation result.

[0041] After data processing, a sleep decision can be made to determine whether to control the backend computing circuit to enter the low-power sleep mode.

[0042] After determining that the backend computing circuit enters the low-power sleep mode, the backend computing circuit enters the sleep period.

[0043] Moreover, a trigger period is also set for the backend computing circuit. If the backend computing circuit is in the sleep period and enters the trigger period, the backend computing circuit is controlled to exit the low-power sleep mode so that the backend computing circuit can perform performance detection on the gallium nitride ultraviolet partial discharge sensor.

[0044] In some embodiments of the present invention, performing performance detection on the gallium nitride ultraviolet partial discharge sensor includes performing time drift calculation and temperature drift calculation on the gallium nitride ultraviolet partial discharge sensor.

[0045] In some embodiments of the present invention, the preset voltage threshold is obtained according to the following formula: Vth = Vb + k × σnoise, where Vth is the preset voltage threshold, Vb is the baseline voltage, k is the preset coefficient, and σnoise is the noise voltage. The noise voltage is the voltage output by the gallium nitride ultraviolet partial discharge sensor in response to the environmental noise of the environment where the gallium nitride ultraviolet partial discharge sensor is located.

[0046] That is to say, due to the existence of environmental noise in the environment where the gallium nitride ultraviolet partial discharge sensor is located. For example, if the above gallium nitride ultraviolet partial discharge sensor is a gallium nitride ultraviolet partial discharge sensor, the ultraviolet light emitted by the sun can be regarded as the environmental noise of the environment where the gallium nitride ultraviolet partial discharge sensor is located. This environmental noise is an interference signal and will also be input into the gallium nitride ultraviolet partial discharge sensor, causing the gallium nitride ultraviolet partial discharge sensor to output a voltage. The voltage output by the gallium nitride ultraviolet partial discharge sensor after the interference signal is input is the above noise voltage.

[0047] Through the above method, the confirmation of the dynamic preset voltage threshold can be realized.

[0048] In some embodiments of the present invention, the method for determining the preset time includes: obtaining the historical occurrence frequency of partial discharge events in the monitoring area of the gallium nitride ultraviolet partial discharge sensor; determining the preset time according to the historical occurrence frequency.

[0049] Specifically, it is necessary to obtain the historical occurrence frequency of partial discharge events in the monitoring area of the gallium nitride ultraviolet partial discharge sensor in history. For example, according to the saved records, obtain the occurrence frequency of partial discharge events in the past 10 days at the moment of determining the preset time to obtain the historical occurrence frequency.

[0050] After obtaining the historical occurrence frequency, the preset time can be determined based on the historical occurrence frequency. For example, a standard time can be set in advance. If the historical occurrence frequency is high, the standard time can be appropriately shortened and the shortened standard time is used as the preset time. If the historical occurrence frequency is low, the standard time can be appropriately extended and the extended standard time is used as the preset time.

[0051] In some embodiments of the present invention, the method for determining the preset time includes: predicting the occurrence probability of partial discharge events in the monitoring area of the gallium nitride ultraviolet partial discharge sensor; determining the preset time according to the occurrence probability.

[0052] Specifically, in order to determine the preset time, a neural network can be trained in advance. For example, a LSTM (Long Short-Term Memory) neural network can be trained using the historical occurrence records of partial discharge events in the monitoring area of the gallium nitride ultraviolet partial discharge sensor.

[0053] After training the neural network, the neural network is used to predict the occurrence probability of partial discharge events. For example, it can be predicted that within the next 1 hour at the moment when the preset time is determined, the occurrence probability of partial discharge events in the monitoring area of the gallium nitride ultraviolet partial discharge sensor.

[0054] After predicting the occurrence probability, the preset time can be determined according to the occurrence probability. For example, a standard time can be set in advance. If the occurrence probability is high, the standard time can be appropriately shortened and the shortened standard time is used as the preset time. If the occurrence probability is low, the standard time can be appropriately extended and the extended standard time is used as the preset time.

[0055] The time determination based on the historical occurrence frequency needs to break through the double constraints of data reliability and timeliness. Partial discharge events have the characteristics of occasionality and non-periodicity. The acquisition of historical data depends on a monitoring system that operates stably for a long time - it is necessary to avoid sample loss caused by gallium nitride ultraviolet partial discharge sensor failures or data storage losses, and overcome the interference of different environments (such as temperature, humidity, and equipment aging degree) on the stability and sensitivity of the gallium nitride ultraviolet partial discharge sensor. Using gallium nitride, a wide-bandgap third-generation semiconductor material technology, to make an ultraviolet detector chip can give full play to the advantages brought by the wide-bandgap characteristics of gallium nitride.

[0056] Gallium nitride materials have high electron mobility and low on-resistance, which enables gallium nitride-based ultraviolet detectors to work at low voltages, effectively reducing power consumption. At the same time, the wide bandgap characteristics of gallium nitride make it highly sensitive to ultraviolet light, and can accurately detect ultraviolet signals generated by partial discharge events under low light intensity conditions. Gallium nitride has a high thermal conductivity (about 1.3 W / cm·K) and better heat dissipation performance, which can effectively reduce temperature fluctuations when the chip is working and avoid performance degradation or failure problems caused by high temperature. The wide bandgap characteristics make the leakage current of gallium nitride materials lower, reduce static power consumption and abnormal current interference with the circuit, and ensure the signal stability of the chip during long-term operation. Therefore, the use of gallium nitride ultraviolet sensor detection chips can significantly reduce the impact of temperature, aging and other factors on gallium nitride ultraviolet partial discharge sensors, and provide stable and sensitive monitoring of partial discharge of monitored equipment, significantly improving the performance and reliability of the partial discharge monitoring system. Such long-term stable and sensitive monitoring, with extremely low false alarm rate, can solve the problems of low frequency, high sporadicity and non-periodicity of partial discharge history from the underlying data level. After the GaN ultraviolet partial discharge sensor obtains accurate partial discharge data, it can more accurately predict the probability of occurrence of partial discharge events in the monitoring area of the GaN ultraviolet partial discharge sensor, and then determine the preset time based on the probability of occurrence.

[0057] In the dynamic collaborative process of determining the preset time, the problem of balancing power consumption and performance must be overcome. The traditional fixed wake-up cycle solution has limitations, either causing a lag in performance detection due to a long cycle (the drift anomaly of the GaN UV PD sensor may not be discovered in time), or causing unnecessary power consumption due to a short cycle. The present invention adopts a two-dimensional strategy of "historical frequency calibration + probability prediction correction" to achieve adaptive dynamic adjustment of the wake-up cycle - for example, when the historical frequency shows that recent discharge events are frequent, the system automatically shortens the preset time to increase the detection density, and predicts possible event peaks in advance through probability prediction to further optimize the wake-up timing. Compared with traditional methods, this "data-driven + intelligent prediction" dual-coupling control logic has formed technical advantages in reducing power consumption (measured average power consumption ≤ 8mW) and improving detection reliability (false alarm rate <0.1%).

[0058] Combine the following Figure 3 The specific embodiment shown is described below.

[0059] Specifically, the GaN ultraviolet detector chip is a chip of the GaN ultraviolet partial discharge sensor, and a temperature sensor is attached to the surface of the GaN ultraviolet detector chip, so that the temperature sensor can detect the temperature of the GaN ultraviolet detector chip in real time for temperature detection. Moreover, the GaN ultraviolet detector chip can also obtain the temperature information collected by the temperature sensor to make a preliminary correction to its own output voltage.

[0060] Moreover, a dynamic control system is set up. This dynamic control system needs to perform dynamic threshold calculation to obtain the above-mentioned preset voltage threshold. Then, the low-power consumption detection unit compares the above output voltage with the preset voltage threshold, and the event trigger circuit triggers events according to the comparison result to determine whether to control the backend computing circuit to enter the low-power consumption sleep mode or exit the low-power consumption sleep mode. Moreover, if the triggered event is to exit the low-power consumption sleep mode, the module that realizes fast wake-up power management wakes up the backend computing circuit.

[0061] Among them, the above low-power consumption detection unit can adopt an ultra-low-power comparator (such as TI TLV3691 model, with a power consumption of 0.9 μA) to monitor the output voltage of the gallium nitride ultraviolet partial discharge sensor in real time.

[0062] The above event trigger circuit can adopt a high-speed comparator (such as MAX9995 model, with a propagation delay of 2 ns).

[0063] To achieve the above fast wake-up power management, a pre-charge power supply can be set up. That is, when the backend computing circuit is in the low-power consumption sleep mode, the devices that need to be charged and woken up in the backend computing circuit are pre-charged with a lower voltage or current first to shorten the startup time. Moreover, the reference voltage and clock cache required by the backend computing circuit can also be maintained in the low-power consumption sleep mode. That is to say, the backend computing circuit is divided into three modules: reference voltage, clock cache, and DSP power supply. When the backend computing circuit enters the low-power consumption sleep mode, only the DSP power supply is turned off, thereby further shortening the startup time.

[0064] Moreover, an adaptive calibration is also set up. This adaptive calibration includes temperature compensation and clock calibration. That is to say, a time-temperature dual calibration system is set up, and this time-temperature dual calibration system can perform both clock calibration and temperature compensation.

[0065] Among them, in order to perform clock calibration, a clock self-correction module, a TCXO, and a satellite signal receiving module are set up. The TCXO is a temperature-compensated crystal oscillator, which can adopt the SiT1569 model with an accuracy of ±0.1 ppm and is used to provide the main clock. The satellite signal receiving module is used as a disciplined clock and can adopt the UBLOX M10 model to receive the clock signal sent by the satellite. The clock self-correction module adopts the Kalman filter fusion algorithm and the clock error model. The inputs are the output of the TCXO and the clock signal output by the satellite signal receiving module, and the outputs are the optimally estimated clock error and the dynamically adjusted output of the TCXO.

[0066] In order to perform temperature compensation, a temperature compensation unit is set up, which adopts a temperature sensor. The temperature sensor can adopt the PT1000 model with an accuracy of ±0.1 °C, and the temperature sensor is mounted on the surface of the gallium nitride ultraviolet detector chip.Figure 3 The temperature compensation in it is a temperature compensation module, which is used to preliminarily process the received temperature information and send the processing result to the temperature compensation unit. The temperature compensation unit realizes the drift compensation of the baseline voltage output by the gallium nitride ultraviolet partial discharge sensor through the compensation of dark current.

[0067] Figure 3 The dynamic voltage regulation in it is a dynamic voltage regulation module, which is used to dynamically regulate the output voltage of the gallium nitride ultraviolet detector chip according to the adaptive calibration result and send the regulation result to the hierarchical calculation circuit, so that the hierarchical calculation circuit can obtain the calculation result, such as whether partial discharge occurs.

[0068] It can be seen that in the above low-power control method, it is set to compare the output voltage with a preset voltage threshold, trigger different controls according to the comparison result, and flexibly set the above preset time. After actual measurement, the average power consumption of the gallium nitride ultraviolet partial discharge sensor system can be ≤8mW, and the battery life can be ≥5 years. Moreover, by setting the above clock calibration, after actual measurement, the time cumulative error can be compressed from ±876 hours / year to <±10 seconds / year. Moreover, by setting the above dynamic preset voltage threshold and its confirmation method, after actual measurement, the false alarm rate can be <0.1% in the range of -40°C to 85°C. Moreover, by setting the above temperature compensation, after actual measurement, the baseline drift suppression rate can be >95% in the range of -40°C to 85°C. Moreover, by setting the above method of shortening the startup time, after actual measurement, the wake-up time of the backend calculation circuit can be shortened from 50ms to ≤5ms.

[0069] In summary, for the control method of the gallium nitride ultraviolet partial discharge sensor system in the embodiment of the present invention, it is set to obtain the output voltage of the gallium nitride ultraviolet partial discharge sensor; compare the output voltage with a preset voltage threshold, where the preset voltage threshold is a threshold obtained according to the baseline voltage; when the output voltage is less than or equal to the preset voltage threshold and the backend calculation circuit has no calculation task, control the backend calculation circuit to enter the low-power sleep mode. Thus, by controlling the backend calculation circuit to enter the low-power sleep mode when there is no input signal, the power consumption of the gallium nitride ultraviolet partial discharge sensor system is reduced. And because it is set to exit the low-power sleep mode when the output voltage is greater than the preset voltage threshold and the gallium nitride ultraviolet partial discharge sensor does not sleep, the detection ability of the gallium nitride ultraviolet partial discharge sensor system can be guaranteed while reducing the power consumption. Moreover, by setting to control the backend calculation circuit to exit the low-power sleep mode at intervals of a preset time, the backend calculation circuit performs performance detection on the gallium nitride ultraviolet partial discharge sensor, so as to realize the guarantee of the performance of the gallium nitride ultraviolet partial discharge sensor with low power consumption by means of interval performance detection of the gallium nitride ultraviolet partial discharge sensor.

[0070] Furthermore, the present invention proposes a computer-readable storage medium.

[0071] In an embodiment of the present invention, a computer-readable storage medium stores a computer program thereon. When the computer program is executed by a processor, the above-mentioned control method for a gallium nitride ultraviolet partial discharge sensor system is implemented.

[0072] The computer-readable storage medium of the embodiment of the present invention implements the above-mentioned control method for a gallium nitride ultraviolet partial discharge sensor system, and reduces the power consumption of the gallium nitride ultraviolet partial discharge sensor system by controlling the backend computing circuit to enter a low-power sleep mode when there is no input signal.

[0073] Furthermore, the present invention proposes an electronic device.

[0074] Figure 4 is a structural block diagram of the electronic device according to the embodiment of the present invention.

[0075] As Figure 4 shown, the electronic device 500 includes a processor 501 and a memory 503. Among them, the processor 501 and the memory 503 are connected, such as being connected through a bus 502. Optionally, the electronic device 500 may further include a transceiver 504. It should be noted that the structure of the electronic device 500 in practical applications does not constitute a limitation on the embodiment of the present invention.

[0076] The processor 501 may be a CPU (Central Processing Unit, central processor), a general-purpose processor, a DSP, an ASIC (Application Specific Integrated Circuit, application-specific integrated circuit), an FPGA or other programmable logic devices, transistor logic devices, hardware components or any combination thereof. It can implement or execute various exemplary logic blocks, modules and circuits described in connection with the disclosure of the present invention. The processor 501 may also be a combination that implements a computing function, such as a combination including one or more microprocessors, a combination of a DSP and a microprocessor, etc.

[0077] The bus 502 may include a path for transmitting information between the above components. The bus 502 may be a PCI (Peripheral Component Interconnect, peripheral component interconnect standard) bus or an EISA (Extended Industry Standard Architecture, extended industry standard architecture) bus, etc. The bus 502 may be divided into an address bus, a data bus, a control bus, etc. For the sake of representation, Figure 4 only a thick line is used to represent it in, but it does not mean that there is only one bus or one type of bus.

[0078] The memory 503 is used to store a computer program corresponding to the control method of the gallium nitride ultraviolet partial discharge sensor system in the above embodiments of the present invention, and the computer program is controlled and executed by the processor 501. The processor 501 is used to execute the computer program stored in the memory 503 to implement the content shown in the foregoing method embodiments.

[0079] Among them, Figure 4 The illustrated electronic device 500 is merely an example and should not impose any limitations on the functions and usage scope of the embodiments of the present invention.

[0080] The electronic device in the embodiments of the present invention implements the above control method of the gallium nitride ultraviolet partial discharge sensor system. By controlling the backend computing circuit to enter the low-power sleep mode when there is no input signal, the power consumption of the gallium nitride ultraviolet partial discharge sensor system is reduced.

[0081] Furthermore, the present invention proposes a gallium nitride ultraviolet partial discharge sensor system.

[0082] Figure 5 It is a structural block diagram of the gallium nitride ultraviolet partial discharge sensor system in the embodiments of the present invention.

[0083] As Figure 5 shown, the gallium nitride ultraviolet partial discharge sensor system 100 includes the above-mentioned electronic device 500.

[0084] The gallium nitride ultraviolet partial discharge sensor system in the embodiments of the present invention adopts the electronic device in the above embodiments. By controlling the backend computing circuit to enter the low-power sleep mode when there is no input signal, the power consumption of the gallium nitride ultraviolet partial discharge sensor system is reduced.

[0085] It should be noted that the logic and / or steps represented in the flowchart or otherwise described herein can be considered as a definite sequence list of executable instructions for implementing logical functions, which can be specifically implemented in any computer-readable medium for use by an instruction execution system, apparatus or device (such as a computer-based system, a system including a processor, or other systems that can fetch instructions from the instruction execution system, apparatus or device and execute the instructions), or used in combination with these instruction execution systems, apparatuses or devices. For the purposes of this specification, a "computer-readable medium" can be any device that can contain, store, communicate, propagate or transmit a program for use by or in combination with an instruction execution system, apparatus or device. More specific examples (non-exhaustive list) of computer-readable media include the following: an electrical connection portion with one or more wirings (electronic device), a portable computer diskette (magnetic device), a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). Additionally, the computer-readable medium can even be paper or other suitable media on which the program can be printed, because the program can be obtained electronically, for example, by optically scanning the paper or other media, followed by editing, interpretation or other suitable processing as necessary, and then stored in a computer memory.

[0086] It should be understood that the various parts of the present invention can be implemented by hardware, software, firmware or a combination thereof. In the above-described embodiments, multiple steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. If implemented by hardware, as in another embodiment, any one or a combination of the following techniques well known in the art can be used: discrete logic circuits having logic gate circuits for implementing logical functions on data signals, application specific integrated circuits having appropriate combinational logic gate circuits, programmable gate arrays (PGAs), field programmable gate arrays (FPGAs), etc.

[0087] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0088] In the description of this specification, the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and should not be construed as a limitation on the present invention.

[0089] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one of these features. In the description of the present invention, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically defined.

[0090] In the description of this specification, unless otherwise specified, the terms "mounted", "connected", "connected to", "fixed", etc. should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements or the interaction relationship between two elements, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0091] In the present invention, unless otherwise clearly specified and limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "beneath" and "underneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0092] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as a limitation on the present invention. Those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present invention.

Claims

1. A control method for a gallium nitride ultraviolet partial discharge sensor system, characterized in that, The gallium nitride ultraviolet partial discharge sensor system includes a gallium nitride ultraviolet partial discharge sensor and a backend computing circuit, and the method includes: Obtain the output voltage of the gallium nitride ultraviolet partial discharge sensor; Compare the output voltage with a preset voltage threshold, where the preset voltage threshold is a threshold obtained based on a baseline voltage, and the baseline voltage is the voltage output by the gallium nitride ultraviolet partial discharge sensor when there is no input signal; When the output voltage is less than or equal to the preset voltage threshold and the backend computing circuit has no computing task, control the backend computing circuit to enter a low-power sleep mode.

2. The control method of the gallium nitride ultraviolet partial discharge sensor system according to claim 1, wherein, The method further includes: When the output voltage is greater than the preset voltage threshold and the backend computing circuit is in the low-power sleep mode, control the backend computing circuit to exit the low-power sleep mode.

3. The control method of the gallium nitride ultraviolet partial discharge sensor system according to claim 1, wherein When the backend computing circuit is in the low-power sleep mode, the method further includes: At every preset time, control the backend computing circuit to exit the low-power sleep mode so that the backend computing circuit can perform performance detection on the gallium nitride ultraviolet partial discharge sensor.

4. The control method of the gallium nitride ultraviolet partial discharge sensor system according to claim 3, wherein, Performing performance detection on the gallium nitride ultraviolet partial discharge sensor includes performing time drift calculation and temperature drift calculation on the gallium nitride ultraviolet partial discharge sensor.

5. The control method of the gallium nitride ultraviolet partial discharge sensor system according to claim 1, characterized in that, The preset voltage threshold is obtained according to the following formula: Vth = Vb + k × σnoise, where Vth is the preset voltage threshold, Vb is the baseline voltage, k is a preset coefficient, and σnoise is the noise voltage, and the noise voltage is the voltage output by the gallium nitride ultraviolet partial discharge sensor in response to the environmental noise of the environment where the gallium nitride ultraviolet partial discharge sensor is located.

6. The control method of the gallium nitride ultraviolet partial discharge sensor system according to claim 3, wherein, The method for determining the preset time includes: Obtain the historical occurrence frequency of partial discharge events in the monitoring area of the gallium nitride ultraviolet partial discharge sensor; Determine the preset time according to the historical occurrence frequency.

7. The control method of the gallium nitride ultraviolet partial discharge sensor system according to claim 3, characterized in that The method for determining the preset time includes: Predict the occurrence probability of partial discharge events in the monitoring area of the gallium nitride ultraviolet partial discharge sensor; Determine the preset time according to the occurrence probability.

8. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the method for controlling a gallium nitride ultraviolet partial discharge sensor system according to any one of claims 1-7.

9. An electronic device, characterized in that, It includes a memory, a processor, and a computer program stored on the memory and running on the processor. When the computer program is executed by the processor, it implements the method for controlling a gallium nitride ultraviolet partial discharge sensor system according to any one of claims 1-7.

10. A gallium nitride ultraviolet partial discharge sensor system, characterized in that, It includes an electronic device according to claim 9.

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