Equivalent activation energy acquisition method and device, computer equipment, readable storage medium and program product

Abstract

The invention relates to an equivalent activation energy obtaining method and device, computer equipment, a readable storage medium and a program product. The method comprises the following steps: carrying out stress profile analysis on the electronic device to obtain a target environment parameter corresponding to the electronic device, constructing a target storage environment according to the target environment parameter, carrying out long-term storage failure analysis on the electronic device in the target storage environment to obtain sensitive stress corresponding to the target storage environment, and carrying out storage failure analysis on the electronic device in the target storage environment to obtain the sensitive stress corresponding to the target storage environment. Carrying out an accelerated storage test on the electronic device based on the sensitive stress, obtaining a single activation energy parameter corresponding to the electronic device, obtaining a failure acceleration coefficient and a stress weight corresponding to the target storage environment, and obtaining the failure acceleration coefficient and the stress weight corresponding to all the target storage environments according to the single activation energy parameter and the failure acceleration coefficients and the stress weights corresponding to all the target storage environments. And obtaining the equivalent activation energy of the electronic device. The method can accurately evaluate the service life of the electronic device.

Description

Technical Field

[0001] The present application relates to the technical field of reliability evaluation, and particularly to a method, device, computer device, readable storage medium and program product for obtaining an equivalent activation energy. Background Art

[0002] As a core component of electronic equipment, the performance of core electronic devices directly determines the overall functional characteristics of the equipment. In practical applications, electronic equipment often needs to undergo long-term storage to ensure that it can respond quickly and perform its expected functions at critical moments. However, long-term storage often has an adverse impact on the performance of core electronic devices, causing them to gradually degrade and even lose their serviceability. Therefore, how to ensure that core electronic devices still have reliable serviceability after long-term storage and accurately evaluate their future expected life indicators has become an urgent problem to be solved.

[0003] In traditional methods, accelerated storage tests are mainly used to evaluate the reliability of electronic devices. By strengthening stress conditions, such as increasing temperature, etc., the performance degradation process of the devices is accelerated, so as to evaluate the life indicators of the devices in a shorter time.

[0004] However, during the storage period, the environmental stresses faced by core electronic devices are not only temperature, but also include various working conditions such as temperature cycling and damp heat. These environmental stresses will also accelerate the degradation process of the devices. Therefore, calculating the life indicators of core electronic devices through the high-temperature activation energy often cannot accurately evaluate the reliability of the products, resulting in the obtained life indicators deviating from the actual situation. Summary of the Invention

[0005] Based on this, in view of the above technical problems, it is necessary to provide a method, device, computer device, readable storage medium and program product for obtaining an equivalent activation energy that can accurately evaluate the life of electronic devices.

[0006] In a first aspect, the present application provides a method for obtaining an equivalent activation energy, including:

[0007] Conduct a stress profile analysis on the electronic device to obtain the target environmental parameters corresponding to the electronic device, and construct a target storage environment according to the target environmental parameters;

[0008] Conduct a long-term storage failure analysis on the electronic device in the target storage environment to obtain the sensitive stress corresponding to the target storage environment;

[0009] Conduct an accelerated storage test on the electronic device based on the sensitive stress in the target storage environment to obtain a single activation energy parameter corresponding to the electronic device;

[0010] Obtain the failure acceleration coefficient and stress weight corresponding to the target storage environment, and obtain the equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients and stress weights corresponding to all target storage environments.

[0011] In one embodiment, the step of performing a stress profile analysis on the electronic device to obtain the target environmental parameters corresponding to the electronic device includes:

[0012] During the storage life cycle of the electronic device, perform a stress analysis of typical events on the electronic device to obtain the event environmental parameters corresponding to the typical events, and construct an event environment based on the event environmental parameters;

[0013] Under the event environment, perform an environmental stress impact analysis on the electronic device to obtain the environmental impact parameters corresponding to the event environment;

[0014] According to the environmental stress data and environmental impact parameters corresponding to all event environments, obtain a storage stress spectrum, and obtain the target environmental parameters corresponding to the electronic device according to the storage stress spectrum.

[0015] In one embodiment, the step of performing a long-term storage failure analysis on the electronic device to obtain the sensitive stress corresponding to the target storage environment includes:

[0016] Perform a storage failure mode and failure mechanism analysis on the electronic device to obtain the correspondence between the target failure mechanism of the electronic device and the environmental stress;

[0017] Obtain the sensitive stress corresponding to the target storage environment according to the correspondence.

[0018] In one embodiment, the step of performing an accelerated storage test on the electronic device based on the sensitive stress to obtain the single activation energy parameter corresponding to the electronic device includes:

[0019] Under the stress conditions corresponding to the sensitive stress, perform an accelerated storage test on the electronic device, and determine the performance sensitive parameters corresponding to the electronic device according to the test results;

[0020] Obtain the performance degradation model of the electronic device according to the performance sensitive parameters, perform a failure analysis on the performance degradation model, and obtain the single activation energy parameter corresponding to the electronic device.

[0021] In one embodiment, the step of obtaining the failure acceleration coefficient and stress weight corresponding to the target storage environment includes:

[0022] Obtain the failure acceleration coefficient corresponding to the target storage environment according to the device characteristics and performance sensitive parameters of the electronic device;

[0023] Obtain the stress weight corresponding to the target storage environment according to the storage stress spectrum.

[0024] In one embodiment, the steps of obtaining the equivalent activation energy of an electronic device according to a single activation energy parameter, the failure acceleration coefficients corresponding to all target storage environments, and the stress weights include:

[0025] Obtaining the weighted acceleration coefficient of the electronic device according to the failure acceleration coefficients corresponding to all target storage environments and the stress weights;

[0026] Obtaining the equivalent activation energy of the electronic device according to the single activation energy parameter and the weighted acceleration coefficient.

[0027] In a second aspect, the present application also provides an equivalent activation energy obtaining device, including:

[0028] A stress analysis module, configured to perform a stress profile analysis on the electronic device to obtain the target environmental parameters corresponding to the electronic device, and construct a target storage environment according to the target environmental parameters;

[0029] A failure analysis module, configured to perform a long-term storage failure analysis on the electronic device in the target storage environment to obtain the sensitive stress corresponding to the target storage environment;

[0030] A storage test module, configured to perform an accelerated storage test on the electronic device based on the sensitive stress in the target storage environment to obtain the single activation energy parameter corresponding to the electronic device;

[0031] An activation energy obtaining module, configured to obtain the failure acceleration coefficients and stress weights corresponding to the target storage environment, and obtain the equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients corresponding to all target storage environments, and the stress weights.

[0032] In a third aspect, the present application also provides a computer device, including a memory and a processor, where the memory stores a computer program, and when the processor executes the computer program, the method steps of any item in the first aspect are implemented.

[0033] In a fourth aspect, the present application also provides a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the method steps of any item in the first aspect are implemented.

[0034] In a fifth aspect, the present application also provides a computer program product, including a computer program, and when the computer program is executed by a processor, the method steps of any item in the first aspect are implemented.

[0035] The above equivalent activation energy acquisition method, device, computer device, readable storage medium, and program product can determine the target environmental parameters that affect the life of the electronic device by performing stress profile analysis on the electronic device. By performing failure analysis on the electronic device in the target storage environment constructed according to the target environmental parameters to obtain the sensitive stress that causes the failure of the electronic device, and then based on the sensitive stress, an accelerated storage test is carried out, which can effectively simulate the failure process of the electronic device, accurately obtain a single activation energy parameter, and then accurately obtain the equivalent activation energy of the electronic device, thereby improving the accuracy of the electronic device life assessment. Description of the Drawings

[0036] To more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following will briefly introduce the drawings required for use in the description of the embodiments of the present application or related technologies. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.

[0037] Figure 1 It is a schematic flowchart of the equivalent activation energy acquisition method in an embodiment;

[0038] Figure 2 It is a schematic flowchart of the stress profile analysis step in an embodiment;

[0039] Figure 3 It is a schematic flowchart of the long-term storage failure analysis step in an embodiment;

[0040] Figure 4 It is a schematic flowchart of the single activation energy parameter acquisition step in an embodiment;

[0041] Figure 5 It is a schematic flowchart of the equivalent activation energy acquisition step in an embodiment;

[0042] Figure 6 It is a schematic flowchart of the equivalent activation energy acquisition method in another embodiment;

[0043] Figure 7 It is a structural block diagram of the equivalent activation energy acquisition device in an embodiment;

[0044] Figure 8 It is an internal structure diagram of a computer device in an embodiment. Detailed Embodiments

[0045] In order to make the objectives, technical solutions, and advantages of the present application clearer, the following further details the present application in conjunction with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0046] In an exemplary embodiment, as Figure 1 shown, an equivalent activation energy acquisition method is provided. Taking the application of this method to core electronic devices as an example, it includes the following steps 102 to 108. Among them:

[0047] S102: Conduct a stress profile analysis on the electronic device to obtain the target environmental parameters corresponding to the electronic device, and construct a target storage environment based on the target environmental parameters.

[0048] Optionally, in actual use, the electronic device is subjected to various stresses, such as temperature, humidity, vibration, electrical stress, etc. Stress profile analysis refers to the detailed measurement, recording, and analysis of the stresses endured by the electronic device under various possible working and storage conditions, determining the variation laws and characteristics of these stresses. Through stress profile analysis, the key stress factors that have a greater impact on the performance and lifespan of the electronic device can be determined. Among them, the target environmental parameters refer to the specific storage conditions of the electronic appliance. Based on the obtained target environmental parameters, an environment similar to these storage conditions can be simulated in a specific test environment for subsequent testing and analysis of the electronic device.

[0049] S104: Conduct a long-term storage failure analysis on the electronic device in the target storage environment to obtain the sensitive stress corresponding to the target storage environment.

[0050] Optionally, in the target storage environment, by conducting a storage failure mode and failure mechanism analysis on the electronic device, the failure mechanism of the electronic device can be obtained. Then, through a sensitive stress analysis of the failure mechanism, the mapping relationship between the failure mechanism and the sensitive stress can be determined, thereby obtaining the stress factors that have a greater impact on the failure of the electronic device, that is, the sensitive stress.

[0051] S106: Conduct an accelerated storage test on the electronic device based on the sensitive stress in the target storage environment to obtain the single activation energy parameter corresponding to the electronic device.

[0052] Optionally, in the target storage environment, with the sensitive stress as the main control factor, by accelerating the failure process of the electronic device, the failure data that would occur to the electronic device after a long time under normal use conditions can be obtained. During the accelerated storage test process, by analyzing and processing the failure data of the electronic device and using relevant physical models and mathematical methods, the single activation energy parameter of the electronic device under specific sensitive stress can be calculated. Among them, the activation energy reflects the difficulty of changes in the internal microstructure of the electronic device or the progress of chemical reactions, and is closely related to the lifespan of the electronic device.

[0053] S108: Obtain the failure acceleration factor and stress weight corresponding to the target storage environment. Based on the single activation energy parameter, the failure acceleration factors and stress weights corresponding to all target storage environments, obtain the equivalent activation energy of the electronic device.

[0054] Optionally, according to the characteristics of the target storage environment and the results of the accelerated storage test, determine the failure acceleration factor corresponding to each target storage environment, where the failure acceleration factor represents the acceleration multiple of the failure speed of the electronic device in this environment relative to normal use conditions. At the same time, according to the influence degree of the sensitive stress on the failure of the electronic device, determine the weight of each stress.

[0055] Furthermore, by integrating the single activation energy parameter, the failure acceleration factors and stress weights corresponding to all target storage environments, and using specific calculation formulas and models, calculate the equivalent activation energy of the electronic device. Among them, the equivalent activation energy comprehensively considers the influence of various stress factors and different storage environments on the life of the electronic device, and more comprehensively reflects the life characteristics of the electronic device in actual use.

[0056] In the above method for obtaining the equivalent activation energy, by performing stress profile analysis on the electronic device, the target environmental parameters that affect the life of the electronic device can be determined. By performing failure analysis on the electronic device in the target storage environment constructed according to the target environmental parameters to obtain the sensitive stress that causes the failure of the electronic device, and then based on the sensitive stress to conduct an accelerated storage test, the failure process of the electronic device can be effectively simulated, the single activation energy parameter can be accurately obtained, and then the equivalent activation energy of the electronic device can be accurately obtained, thereby improving the accuracy of the life assessment of the electronic device.

[0057] In an exemplary embodiment, the step of performing stress profile analysis on the electronic device to obtain the target environmental parameters corresponding to the electronic device includes: during the storage life cycle of the electronic device, perform stress analysis on the typical events of the electronic device to obtain the event environmental parameters corresponding to the typical events, and construct an event environment according to the event environmental parameters; in the event environment, perform environmental stress influence analysis on the electronic device to obtain the environmental influence parameters corresponding to the event environment; according to the environmental stress data and environmental influence parameters corresponding to all event environments, obtain the storage stress spectrum, and obtain the target environmental parameters corresponding to the electronic device according to the storage stress spectrum.

[0058] Optionally, an electronic device may experience various typical events during its storage life cycle, such as depot storage, life extension refurbishment, mission launch, etc. By performing stress analysis on these typical events, the various stresses suffered by the electronic device in each typical event can be determined, such as environmental stresses like temperature, humidity, temperature change, etc., so as to obtain the event environmental parameters corresponding to each typical event. Based on the obtained event environmental parameters, the environmental conditions corresponding to the typical events can be simulated to further analyze and test the electronic device under controllable conditions.

[0059] Exemplarily, as Figure 2 shown, by conducting typical event and stress analysis during the storage life cycle, the typical events and environment of storage and use are clarified. During the stress analysis process, through the influence analysis of storage environmental stress, driven by typical tasks such as depot storage, life extension refurbishment, mission launch, etc., the comprehensive influence of natural environmental stresses such as temperature, humidity, temperature change, etc. is extracted, combined with the measured data of storage and use environmental stress, and the storage environmental stress is quantitatively processed, so as to comprehensively achieve the analysis of the storage environmental stress profile of the core electronic device, and finally determine the typical storage environment of the electronic device, such as high-temperature storage environment, temperature cycle storage environment, and damp heat storage environment, etc.

[0060] In this embodiment, by performing stress analysis on various typical events during the storage life cycle of the electronic device, various situations that the electronic device may encounter during actual use can be covered, which is closer to the real use environment, thereby improving the reliability and practicality of the evaluation results.

[0061] In an exemplary embodiment, the steps of performing long-term storage failure analysis on the electronic device to obtain the sensitive stress corresponding to the target storage environment include: performing storage failure mode and failure mechanism analysis on the electronic device to obtain the correspondence between the target failure mechanism of the electronic device and the environmental stress; obtaining the sensitive stress corresponding to the target storage environment according to the correspondence.

[0062] Optionally, during the long-term storage process of the electronic device, various failure manifestations may occur. By performing storage failure mode and failure mechanism analysis on the electronic device, the failure mode of the electronic device in the storage state can be obtained. After determining the failure mode, the failure mechanism of the failure mode is obtained, and a mapping relationship between the failure mechanism and the environmental stress is established. According to the mapping relationship, the environmental stress factors that play a key role in the initiation and development of the target failure mechanism are obtained, that is, the sensitive stress corresponding to the target storage environment.

[0063] Exemplarily, as Figure 3As shown, by analyzing product characteristics and selecting device models, and combining with the component list of existing equipment, typical products are comprehensively selected as the research objects from dimensions such as package form, package material, and manufacturer, so as to improve the coverage of research conclusions. For the selected typical products, through the analysis of storage failure modes and failure mechanisms, for example, the possible failure modes of operational amplifiers include seal failure, bonding degradation, package corrosion, and micro-corrosion defects of chips, etc.; the possible failure modes of memories include seal failure, wire bonding failure, and data loss, etc.; the possible failure modes of microwave devices include seal failure, chip bonding failure, and package corrosion failure, etc. Finally, through the analysis of failure-sensitive stresses, the mapping relationships between the main failure mechanisms and temperature-sensitive stresses, temperature-change-sensitive stresses, and humidity-heat-sensitive stresses are clarified.

[0064] In this embodiment, by analyzing failure modes and mechanisms, the sensitive stresses that play a key role in the failure of electronic devices can be accurately found, so as to accurately evaluate the lifespan of electronic devices according to the influence degree of the sensitive stresses on the lifespan of electronic devices.

[0065] In an exemplary embodiment, the steps of obtaining the single activation energy parameter corresponding to the electronic device based on the sensitive stress through an accelerated storage test on the electronic device include: under the stress conditions corresponding to the sensitive stress, performing an accelerated storage test on the electronic device, and determining the performance-sensitive parameter corresponding to the electronic device according to the test results; obtaining the performance degradation model of the electronic device according to the performance-sensitive parameter, and performing failure analysis on the performance degradation model to obtain the single activation energy parameter corresponding to the electronic device.

[0066] Optionally, under the specific stress conditions corresponding to these sensitive stresses, an accelerated storage test is carried out on the electronic device to accelerate the physical or chemical change process inside the electronic device, so as to simulate the state after long-term storage or use in a short time. During the accelerated storage test, various performance indicators of the electronic device are monitored and recorded in real time, and by analyzing the test results, the parameter that is most sensitive to the performance change of the electronic device, that is, the performance-sensitive parameter, is determined.

[0067] Furthermore, according to the determined performance-sensitive parameter, a performance degradation model of the electronic device is established, where the performance degradation model describes the law of change of the performance-sensitive parameter with time or test conditions. By deeply analyzing the established performance degradation model, the critical value of the performance-sensitive parameter when the electronic device reaches the failure state is determined. Combining relevant physical theories and chemical reaction kinetics knowledge, through the analysis of the performance degradation process, the single activation energy parameter corresponding to the electronic device is calculated. Among them, the activation energy reflects the energy barrier that needs to be overcome for a certain change to occur inside the electronic device, and the single activation energy parameter is a quantitative description of this energy barrier under specific sensitive stress conditions.

[0068] Exemplarily, as Figure 4 shown, by conducting a single failure mechanism accelerated storage test design, the determination of the device's ultimate stress conditions is completed, the number of test samples, test groups, and stress levels are clarified, the requirements for test equipment and test conditions are determined, and the requirements for parameter monitoring and failure criteria are proposed, providing clear inputs for the activation energy acquisition test. During the implementation of the accelerated storage test, the installation of the device under test and the preheating of the equipment are completed, and the initial state of the device before the test is confirmed to ensure compliance with the test requirements. During the test, the test data is accurately and completely recorded. Finally, based on the recorded data, a test data model is established. By sorting out the original test records, the performance-sensitive parameters of the accelerated test are determined, a performance degradation model under different stress conditions is constructed, and the activation energy parameters are extracted based on the physics-of-failure model.

[0069] In this embodiment, by conducting an accelerated storage test on the electronic device, the performance changes of the electronic device during long-term normal use or storage can be simulated in a relatively short time, thereby improving the efficiency of the life assessment of the electronic device.

[0070] In an exemplary embodiment, the steps of obtaining the failure acceleration coefficient and stress weight corresponding to the target storage environment include: obtaining the failure acceleration coefficient corresponding to the target storage environment according to the device characteristics and performance-sensitive parameters of the electronic device; obtaining the stress weight corresponding to the target storage environment according to the storage stress spectrum.

[0071] Optionally, the characteristics of the electronic device will affect its reliability and failure behavior in different environments. The performance-sensitive parameters refer to the key parameters determined in the accelerated storage test that can reflect the performance changes of the electronic device. These parameters are closely related to the device's failure process. By analyzing the changes in the performance-sensitive parameters under different stress conditions, the failure rate of the device can be understood. Combining the device characteristics and performance-sensitive parameters of the electronic device, the failure acceleration coefficient corresponding to the target storage environment can be calculated, where the failure acceleration coefficient represents the acceleration multiple of the failure speed of the electronic device in the target storage environment relative to the normal or standard environment.

[0072] Optionally, the storage stress spectrum is a comprehensive description of the various stresses faced by the electronic device during its storage life cycle. By analyzing the storage stress spectrum, the frequency, intensity, and potential impact degree of different stress factors on the failure of the electronic device in the target storage environment can be determined. Based on the information obtained from the analysis of the storage stress spectrum, a weight value is assigned to each stress factor, and the stress weight reflects the relative importance of the stress factor in the target storage environment for the failure of the electronic device.

[0073] In this embodiment, by obtaining the failure acceleration coefficient and stress weight of the target storage environment, the influence of different target storage environments on the failure speed of electronic devices can be quantified, highlighting the relative importance of different stress factors in the failure process, thereby improving the accuracy of life assessment.

[0074] In an exemplary embodiment, the steps of obtaining the equivalent activation energy of an electronic device according to a single activation energy parameter, the failure acceleration coefficients and stress weights corresponding to all target storage environments include: obtaining the weighted acceleration coefficient of the electronic device according to the failure acceleration coefficients and stress weights corresponding to all target storage environments; obtaining the equivalent activation energy of the electronic device according to the single activation energy parameter and the weighted acceleration coefficient.

[0075] Optionally, different target storage environments have different degrees of influence on the failure speed of electronic devices. The failure acceleration coefficient reflects the acceleration multiple of the failure speed of the electronic device compared to the normal environment under a specific target storage environment, while the stress weight reflects the relative importance of the stress factors in each target storage environment to the failure of the electronic device. By comprehensively considering the failure acceleration coefficients and stress weights corresponding to all target storage environments, the weighted acceleration coefficient of the electronic device is calculated by means of weighted average.

[0076] Optionally, the single activation energy parameter is a quantification of the energy barrier that needs to be overcome for internal changes to occur in the electronic device under specific sensitive stress conditions, and the weighted acceleration coefficient reflects the comprehensive failure acceleration situation of the electronic device under all target storage environments. By combining the single activation energy parameter and the weighted acceleration coefficient to calculate the equivalent activation energy of the electronic device, the equivalent activation energy comprehensively considers various factors such as different target storage environments and sensitive stress, and is a parameter that more comprehensively reflects the energy characteristics of internal microscopic changes of the electronic device under the actual complex storage environment.

[0077] Exemplarily, as Figure 5 shown, by analyzing the contribution rate of the environmental stress acceleration coefficient during the storage period of the electronic device, integrating the intrinsic characteristics such as the device material process structure and the storage sensitive characteristics, determining the contribution rate distribution method to clarify the contribution rate situation of different environmental stress acceleration coefficients. Through the analysis of the stress weight of the storage profile, extracting the typical storage environment stress spectrum, carrying out the analysis of the influence of storage events, establishing the stress weight distribution method to determine the weights of different stress factors. Finally, constructing the equivalent activation energy of the electronic device, by sorting out the multi-stress single storage activation energy, constructing the equivalent activation energy model of the known storage profile, and establishing a method for obtaining the equivalent activation energy of the electronic device based on the accelerated storage test, the equivalent activation energy of the electronic device is obtained.

[0078] Exemplarily, assume that the storage stress weight of the high-temperature storage environment is , and the acceleration coefficient is ; The storage stress weight in the temperature cycle storage environment is , and the acceleration factor is ; The storage stress weight in the damp heat storage environment is , and the acceleration factor is .

[0079] Then, the weighted acceleration factor is:

[0080]

[0081] Furthermore, the equivalent activation energy is:

[0082]

[0083] wherein, T0 is the reference temperature in the target storage environment, and T1 is the absolute temperature set in the accelerated test.

[0084] In this embodiment, by comprehensively calculating the failure acceleration factors and stress weights corresponding to all target storage environments, the life-related characteristics of electronic devices in various possible storage environments can be more comprehensively reflected, making the evaluation results closer to the actual usage situation and improving the comprehensiveness and authenticity of the life evaluation of electronic devices.

[0085] In an exemplary embodiment, as Figure 6 shown, an equivalent activation energy acquisition method is provided, and this method includes the following steps:

[0086] S602: During the storage life cycle of the electronic device, conduct stress analysis on typical events of the electronic device to obtain the event environment parameters corresponding to the typical events, and construct an event environment based on the event environment parameters; under the event environment, conduct environmental stress impact analysis on the electronic device to obtain the environmental impact parameters corresponding to the event environment; according to the environmental stress data and environmental impact parameters corresponding to all event environments, obtain the storage stress spectrum, obtain the target environment parameters corresponding to the electronic device according to the storage stress spectrum, and construct a target storage environment according to the target environment parameters.

[0087] S604: In the target storage environment, conduct storage failure mode and failure mechanism analysis on the electronic device to obtain the correspondence between the target failure mechanism of the electronic device and the environmental stress; obtain the sensitive stress corresponding to the target storage environment according to the correspondence.

[0088] S606: In the target storage environment, under the stress conditions corresponding to the sensitive stress, conduct an accelerated storage test on the electronic device, and determine the performance sensitive parameters corresponding to the electronic device according to the test results; obtain the performance degradation model of the electronic device according to the performance sensitive parameters, conduct failure analysis on the performance degradation model, and obtain the single activation energy parameter corresponding to the electronic device.

[0089] S608: Obtain the failure acceleration coefficient corresponding to the target storage environment according to the device characteristics and performance sensitive parameters of the electronic device; obtain the stress weight corresponding to the target storage environment according to the storage stress spectrum.

[0090] S610: Obtain the weighted acceleration coefficient of the electronic device according to the failure acceleration coefficients and stress weights corresponding to all target storage environments; obtain the equivalent activation energy of the electronic device according to the single activation energy parameter and the weighted acceleration coefficient.

[0091] In this embodiment, by performing stress profile analysis on the electronic device, the target environmental parameters that affect the life of the electronic device can be determined. By performing failure analysis on the electronic device in the target storage environment constructed according to the target environmental parameters to obtain the sensitive stress that causes the failure of the electronic device, and then performing an accelerated storage test based on the sensitive stress, the failure process of the electronic device can be effectively simulated, the single activation energy parameter can be accurately obtained, and then the equivalent activation energy of the electronic device can be accurately obtained, thereby improving the accuracy of the life assessment of the electronic device.

[0092] It should be understood that although the steps in the flowcharts involved in the above embodiments are shown in sequence according to the arrows, these steps do not necessarily need to be executed in the order indicated by the arrows. Unless there is a clear indication in this article, the execution of these steps does not have a strict order limit, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above embodiments may include multiple steps or multiple stages. These steps or stages do not necessarily need to be executed at the same time, but can be executed at different times. The execution order of these steps or stages does not necessarily need to be sequential, but can be executed alternately or alternately with at least a part of other steps or steps or stages in other steps.

[0093] Based on the same inventive concept, the embodiment of the present application also provides an equivalent activation energy acquisition device for implementing the equivalent activation energy acquisition method involved above. The solution provided by this device to solve the problem is similar to the solution described in the above method. Therefore, the specific limitations in one or more embodiments of the equivalent activation energy acquisition device provided below can refer to the limitations on the equivalent activation energy acquisition method in the above text, and will not be repeated here.

[0094] In an exemplary embodiment, as Figure 7 shown, an equivalent activation energy acquisition device is provided, including: a stress analysis module 10, a failure analysis module 20, a storage test module 30, and an activation energy acquisition module 40, where:

[0095] A stress analysis module 10 is used to perform a stress profile analysis on an electronic device, obtain target environmental parameters corresponding to the electronic device, and construct a target storage environment based on the target environmental parameters.

[0096] A failure analysis module 20 is used to perform a long-term storage failure analysis on the electronic device in the target storage environment and obtain sensitive stresses corresponding to the target storage environment.

[0097] A storage test module 30 is used to perform an accelerated storage test on the electronic device based on the sensitive stress in the target storage environment and obtain a single activation energy parameter corresponding to the electronic device.

[0098] An activation energy acquisition module 40 is used to obtain a failure acceleration coefficient and a stress weight corresponding to the target storage environment, and obtain the equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients corresponding to all target storage environments, and the stress weights.

[0099] In an exemplary embodiment, the stress analysis module 10 is further used to perform a stress analysis of typical events on the electronic device during the storage life cycle of the electronic device, obtain event environmental parameters corresponding to the typical events, and construct an event environment based on the event environmental parameters; perform an environmental stress impact analysis on the electronic device in the event environment to obtain environmental impact parameters corresponding to the event environment; obtain a storage stress spectrum according to the environmental stress data and environmental impact parameters corresponding to all event environments, and obtain target environmental parameters corresponding to the electronic device according to the storage stress spectrum.

[0100] In an exemplary embodiment, the failure analysis module 20 is further used to perform a storage failure mode and failure mechanism analysis on the electronic device to obtain the corresponding relationship between the target failure mechanism of the electronic device and the environmental stress; obtain the sensitive stress corresponding to the target storage environment according to the corresponding relationship.

[0101] In an exemplary embodiment, the storage test module 30 is further used to perform an accelerated storage test on the electronic device under the stress conditions corresponding to the sensitive stress, and determine a performance sensitive parameter corresponding to the electronic device according to the test result; obtain a performance degradation model of the electronic device according to the performance sensitive parameter, and perform a failure analysis on the performance degradation model to obtain a single activation energy parameter corresponding to the electronic device.

[0102] In an exemplary embodiment, the activation energy acquisition module 40 is further used to obtain a failure acceleration coefficient corresponding to the target storage environment according to the device characteristics and performance sensitive parameters of the electronic device; obtain a stress weight corresponding to the target storage environment according to the storage stress spectrum.

[0103] In an exemplary embodiment, the activation energy acquisition module 40 is further configured to obtain a weighted acceleration factor of the electronic device according to the failure acceleration factors and stress weights corresponding to all target storage environments; and obtain the equivalent activation energy of the electronic device according to a single activation energy parameter and the weighted acceleration factor.

[0104] Each module in the above equivalent activation energy acquisition device can be implemented in whole or in part by software, hardware, and their combination. Each of the above modules can be embedded in or independent of a processor in a computer device in the form of hardware, or stored in a memory in the computer device in the form of software, so that the processor can call and execute the operations corresponding to each of the above modules.

[0105] In an exemplary embodiment, a computer device is provided. The computer device may be a terminal, and its internal structure diagram may be as Figure 8 shown. The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit, and an input device. Among them, the processor, the memory, and the input / output interface are connected through a system bus, and the communication interface, the display unit, and the input device are connected to the system bus through the input / output interface. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The input / output interface of the computer device is used to exchange information between the processor and external devices. The communication interface of the computer device is used to communicate with an external terminal in a wired or wireless manner. The wireless manner can be implemented through WIFI, a mobile cellular network, near field communication (NFC), or other technologies. The computer program, when executed by the processor, implements an equivalent activation energy acquisition method. The display unit of the computer device is used to form a visually visible picture, which can be a display screen, a projection device, or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen. The input device of the computer device can be a touch layer covered on the display screen, or a button, a trackball, or a touchpad provided on the outer shell of the computer device, or an external keyboard, touchpad, or mouse, etc.

[0106] Those skilled in the art can understand that Figure 8 the structure shown in

[0107] In an exemplary embodiment, a computer device is provided, including a memory and a processor. A computer program is stored in the memory. When the processor executes the computer program, the following steps are implemented: performing a stress profile analysis on an electronic device to obtain target environmental parameters corresponding to the electronic device, and constructing a target storage environment according to the target environmental parameters; performing a long-term storage failure analysis on the electronic device in the target storage environment to obtain sensitive stresses corresponding to the target storage environment; performing an accelerated storage test on the electronic device based on the sensitive stresses in the target storage environment to obtain a single activation energy parameter corresponding to the electronic device; obtaining a failure acceleration coefficient and a stress weight corresponding to the target storage environment, and obtaining an equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients corresponding to all target storage environments, and the stress weights.

[0108] In one embodiment, the stress profile analysis on the electronic device to obtain the target environmental parameters corresponding to the electronic device, which the processor executes when running the computer program, includes: performing a stress analysis of typical events on the electronic device during the storage life cycle of the electronic device to obtain event environmental parameters corresponding to the typical events, and constructing an event environment according to the event environmental parameters; performing an environmental stress impact analysis on the electronic device in the event environment to obtain environmental impact parameters corresponding to the event environment; obtaining a storage stress spectrum according to the environmental stress data and the environmental impact parameters corresponding to all event environments, and obtaining the target environmental parameters corresponding to the electronic device according to the storage stress spectrum.

[0109] In one embodiment, the long-term storage failure analysis on the electronic device to obtain the sensitive stresses corresponding to the target storage environment, which the processor executes when running the computer program, includes: performing a storage failure mode and failure mechanism analysis on the electronic device to obtain the corresponding relationship between the target failure mechanism of the electronic device and the environmental stresses; obtaining the sensitive stresses corresponding to the target storage environment according to the corresponding relationship.

[0110] In one embodiment, the accelerated storage test on the electronic device based on the sensitive stresses to obtain the single activation energy parameter corresponding to the electronic device, which the processor executes when running the computer program, includes: performing an accelerated storage test on the electronic device under the stress conditions corresponding to the sensitive stresses, and determining the performance sensitive parameters corresponding to the electronic device according to the test results; obtaining a performance degradation model of the electronic device according to the performance sensitive parameters, and performing a failure analysis on the performance degradation model to obtain the single activation energy parameter corresponding to the electronic device.

[0111] In one embodiment, obtaining the failure acceleration coefficient and the stress weight corresponding to the target storage environment, which the processor executes when running the computer program, includes: obtaining the failure acceleration coefficient corresponding to the target storage environment according to the device characteristics and the performance sensitive parameters of the electronic device; obtaining the stress weight corresponding to the target storage environment according to the storage stress spectrum.

[0112] In one embodiment, when the processor executes a computer program, obtaining the equivalent activation energy of an electronic device according to a single activation energy parameter, the failure acceleration coefficients corresponding to all target storage environments, and the stress weights includes: obtaining the weighted acceleration coefficient of the electronic device according to the failure acceleration coefficients corresponding to all target storage environments and the stress weights; and obtaining the equivalent activation energy of the electronic device according to the single activation energy parameter and the weighted acceleration coefficient.

[0113] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the following steps are implemented: performing a stress profile analysis on an electronic device to obtain the target environmental parameters corresponding to the electronic device, and constructing a target storage environment according to the target environmental parameters; performing a long-term storage failure analysis on the electronic device in the target storage environment to obtain the sensitive stress corresponding to the target storage environment; performing an accelerated storage test on the electronic device based on the sensitive stress in the target storage environment to obtain the single activation energy parameter corresponding to the electronic device; obtaining the failure acceleration coefficients and stress weights corresponding to the target storage environment, and obtaining the equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients corresponding to all target storage environments, and the stress weights.

[0114] In one embodiment, when the computer program is executed by a processor, performing a stress profile analysis on an electronic device to obtain the target environmental parameters corresponding to the electronic device includes: performing a stress analysis of typical events on the electronic device during the storage life cycle of the electronic device to obtain the event environmental parameters corresponding to the typical events, and constructing an event environment according to the event environmental parameters; performing an environmental stress impact analysis on the electronic device in the event environment to obtain the environmental impact parameters corresponding to the event environment; obtaining a storage stress spectrum according to the environmental stress data and environmental impact parameters corresponding to all event environments, and obtaining the target environmental parameters corresponding to the electronic device according to the storage stress spectrum.

[0115] In one embodiment, when the computer program is executed by a processor, performing a long-term storage failure analysis on an electronic device to obtain the sensitive stress corresponding to the target storage environment includes: performing a storage failure mode and failure mechanism analysis on the electronic device to obtain the correspondence between the target failure mechanism of the electronic device and the environmental stress; and obtaining the sensitive stress corresponding to the target storage environment according to the correspondence.

[0116] In one embodiment, when the computer program is executed by a processor, the accelerated storage test of an electronic device based on sensitive stress is involved, and a single activation energy parameter corresponding to the electronic device is obtained, including: under the stress condition corresponding to the sensitive stress, performing an accelerated storage test on the electronic device, and determining the performance sensitive parameter corresponding to the electronic device according to the test result; obtaining the performance degradation model of the electronic device according to the performance sensitive parameter, performing failure analysis on the performance degradation model, and obtaining the single activation energy parameter corresponding to the electronic device.

[0117] In one embodiment, when the computer program is executed by a processor, obtaining the failure acceleration coefficient and stress weight corresponding to the target storage environment includes: obtaining the failure acceleration coefficient corresponding to the target storage environment according to the device characteristics and performance sensitive parameters of the electronic device; obtaining the stress weight corresponding to the target storage environment according to the storage stress spectrum.

[0118] In one embodiment, when the computer program is executed by a processor, obtaining the equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients and stress weights corresponding to all target storage environments includes: obtaining the weighted acceleration coefficient of the electronic device according to the failure acceleration coefficients and stress weights corresponding to all target storage environments; obtaining the equivalent activation energy of the electronic device according to the single activation energy parameter and the weighted acceleration coefficient.

[0119] In one embodiment, a computer program product is provided, including a computer program, which when executed by a processor implements the following steps: performing stress profile analysis on the electronic device to obtain the target environment parameter corresponding to the electronic device, and constructing the target storage environment according to the target environment parameter; in the target storage environment, performing long-term storage failure analysis on the electronic device to obtain the sensitive stress corresponding to the target storage environment; in the target storage environment, performing an accelerated storage test on the electronic device based on the sensitive stress to obtain the single activation energy parameter corresponding to the electronic device; obtaining the failure acceleration coefficient and stress weight corresponding to the target storage environment, and obtaining the equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients and stress weights corresponding to all target storage environments.

[0120] In one embodiment, when the computer program is executed by a processor, performing stress profile analysis on the electronic device to obtain the target environment parameter corresponding to the electronic device includes: during the storage life cycle of the electronic device, performing stress analysis of typical events on the electronic device to obtain the event environment parameter corresponding to the typical event, and constructing the event environment according to the event environment parameter; in the event environment, performing environmental stress impact analysis on the electronic device to obtain the environmental impact parameter corresponding to the event environment; obtaining the storage stress spectrum according to the environmental stress data and environmental impact parameters corresponding to all event environments, and obtaining the target environment parameter corresponding to the electronic device according to the storage stress spectrum.

[0121] In one embodiment, when the computer program is executed by a processor, the long-term storage failure analysis of electronic devices is involved, and the sensitive stress corresponding to the target storage environment is obtained, including: analyzing the storage failure modes and failure mechanisms of the electronic devices to obtain the corresponding relationship between the target failure mechanism of the electronic devices and the environmental stress; obtaining the sensitive stress corresponding to the target storage environment according to the corresponding relationship.

[0122] In one embodiment, when the computer program is executed by a processor, the accelerated storage test of electronic devices based on the sensitive stress is involved, and the single activation energy parameter corresponding to the electronic devices is obtained, including: performing an accelerated storage test on the electronic devices under the stress conditions corresponding to the sensitive stress, and determining the performance sensitive parameter corresponding to the electronic devices according to the test results; obtaining the performance degradation model of the electronic devices according to the performance sensitive parameter, and performing failure analysis on the performance degradation model to obtain the single activation energy parameter corresponding to the electronic devices.

[0123] In one embodiment, when the computer program is executed by a processor, obtaining the failure acceleration coefficient and stress weight corresponding to the target storage environment includes: obtaining the failure acceleration coefficient corresponding to the target storage environment according to the device characteristics and performance sensitive parameters of the electronic devices; obtaining the stress weight corresponding to the target storage environment according to the storage stress spectrum.

[0124] In one embodiment, when the computer program is executed by a processor, obtaining the equivalent activation energy of the electronic devices according to the single activation energy parameter, the failure acceleration coefficients and stress weights corresponding to all target storage environments includes: obtaining the weighted acceleration coefficient of the electronic devices according to the failure acceleration coefficients and stress weights corresponding to all target storage environments; obtaining the equivalent activation energy of the electronic devices according to the single activation energy parameter and the weighted acceleration coefficient.

[0125] Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above methods. Among them, any reference to a memory, database, or other medium used in the embodiments provided in this application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The databases involved in the embodiments provided in this application can include at least one of relational databases and non-relational databases. Non-relational databases can include distributed databases based on blockchain, etc., without limitation. The processors involved in the embodiments provided in this application can be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, data processing logics based on quantum computing, artificial intelligence (AI) processors, etc., without limitation.

[0126] The technical features of the above embodiments can be combined arbitrarily. For the sake of concise description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered to be within the scope recorded in this application.

[0127] The above-described embodiments merely represent several implementation manners of the present application. The description thereof is relatively specific and detailed, but it should not be construed as a limitation on the patent scope of the present application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all fall within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the appended claims.

Claims

1. A method for obtaining an equivalent activation energy, characterized in that The method includes: Performing a stress profile analysis on the electronic device to obtain target environmental parameters corresponding to the electronic device, and constructing a target storage environment according to the target environmental parameters; Performing a long-term storage failure analysis on the electronic device in the target storage environment to obtain sensitive stresses corresponding to the target storage environment; Performing an accelerated storage test on the electronic device based on the sensitive stresses in the target storage environment to obtain a single activation energy parameter corresponding to the electronic device; Obtaining a failure acceleration coefficient and a stress weight corresponding to the target storage environment, and obtaining an equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients corresponding to all target storage environments, and the stress weights; 2. The method according to claim 1, characterized in that, The performing a stress profile analysis on the electronic device to obtain target environmental parameters corresponding to the electronic device includes: Performing a stress analysis of typical events on the electronic device during the storage life cycle of the electronic device to obtain event environmental parameters corresponding to the typical events, and constructing an event environment according to the event environmental parameters; Performing an environmental stress impact analysis on the electronic device in the event environment to obtain environmental impact parameters corresponding to the event environment; Obtaining a storage stress spectrum according to the environmental stress data and environmental impact parameters corresponding to all event environments, and obtaining target environmental parameters corresponding to the electronic device according to the storage stress spectrum; 3. The method according to claim 1, characterized in that, The performing a long-term storage failure analysis on the electronic device to obtain sensitive stresses corresponding to the target storage environment includes: Performing a storage failure mode and failure mechanism analysis on the electronic device to obtain the corresponding relationship between the target failure mechanism of the electronic device and the environmental stress; Obtaining sensitive stresses corresponding to the target storage environment according to the corresponding relationship; 4. The method according to claim 1, characterized in that, The performing an accelerated storage test on the electronic device based on the sensitive stresses to obtain a single activation energy parameter corresponding to the electronic device includes: Performing an accelerated storage test on the electronic device under the stress conditions corresponding to the sensitive stresses, and determining a performance sensitive parameter corresponding to the electronic device according to the test results; Obtaining a performance degradation model of the electronic device according to the performance sensitive parameter, and performing a failure analysis on the performance degradation model to obtain a single activation energy parameter corresponding to the electronic device; 5. The method according to claim 2, wherein The obtaining a failure acceleration coefficient and a stress weight corresponding to the target storage environment includes: Obtaining a failure acceleration coefficient corresponding to the target storage environment according to the device characteristics and performance sensitive parameters of the electronic device; Obtaining a stress weight corresponding to the target storage environment according to the storage stress spectrum; 6. The method according to claim 1, wherein The obtaining an equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients corresponding to all target storage environments, and the stress weights includes: Obtaining a weighted acceleration coefficient of the electronic device according to the failure acceleration coefficients and stress weights corresponding to all target storage environments; Obtaining an equivalent activation energy of the electronic device according to the single activation energy parameter and the weighted acceleration coefficient; 7. An equivalent activation energy acquisition device, characterized in that, The device includes: A stress analysis module, which is used to perform a stress profile analysis on an electronic device, obtain target environmental parameters corresponding to the electronic device, and construct a target storage environment according to the target environmental parameters; A failure analysis module, which is used to perform a long-term storage failure analysis on the electronic device in the target storage environment and obtain sensitive stresses corresponding to the target storage environment; A storage test module, which is used to perform an accelerated storage test on the electronic device based on the sensitive stresses in the target storage environment and obtain a single activation energy parameter corresponding to the electronic device; An activation energy acquisition module, which is used to acquire a failure acceleration coefficient and a stress weight corresponding to the target storage environment, and acquire an equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients and the stress weights corresponding to all target storage environments.

8. A computer device, comprising a memory and a processor, the memory storing a computer program, characterized in that, When the processor executes the computer program, the steps of the method according to any one of claims 1 to 6 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, the steps of the method according to any one of claims 1 to 6 are implemented.

10. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by the processor, the steps of the method according to any one of claims 1 to 6 are implemented.

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