Semiconductor manufacturing apparatus and method for manufacturing semiconductor device

Abstract

The invention provides a semiconductor manufacturing apparatus capable of easily separating a semiconductor wafer from a stage. The semiconductor manufacturing apparatus includes: a stage on which a semiconductor wafer is placed so as to be in contact with a protection portion, the stage including a vacuum suction region having the protection portion and fixing the semiconductor wafer irradiated with laser light, and a hard non-adhesive material; the hard non-adhesive material is provided on the side of the semiconductor wafer that is in contact with the protective portion, and the thickness of the hard non-adhesive material is less than the thickness of the semiconductor wafer when the radius of the semiconductor wafer is dmm, the width of a foamed region, which is a region in which the protective portion is foamed, is bmm, and the width of a degraded region, which is a region in which the hard non-adhesive material is degraded, is cmm. The vacuum suction region has a radius {d-(b + c)} / d times the radius of the semiconductor wafer, and is housed in the same circle as the center of the semiconductor wafer. As a result, the semiconductor wafer can be easily separated from the stage.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor manufacturing apparatus for performing heat treatment and a method for manufacturing a semiconductor device. Background Art

[0002] In the prior art, a stage is disclosed which has a plurality of suction ports opened on the upper surface and lift pins respectively accommodated in a plurality of through holes reaching from the upper surface to the lower surface (for example, Patent Document 1). Prior Art Documents Patent Documents

[0003] Patent Document 1: Japanese Patent Application Laid-Open No. 2023-034622 Summary of the Invention Technical Problem to be Solved by the Invention

[0004] However, when a semiconductor wafer is placed on the stage for heat treatment, there is a problem that the protective portion in contact with the stage foams and adheres to the stage, and it is difficult to separate the semiconductor wafer from the stage after heat treatment.

[0005] The present disclosure is proposed to solve the above problems, and an object thereof is to provide a semiconductor manufacturing apparatus capable of easily separating a semiconductor wafer from a stage. Technical Means for Solving the Technical Problem

[0006] The semiconductor manufacturing apparatus according to the present disclosure includes a stage having a vacuum adsorption region and a hard non-adhesive material, on which a semiconductor wafer is placed in contact with a protective portion. The vacuum adsorption region has a protective portion for fixing a semiconductor wafer irradiated with laser light. The hard non-adhesive material is provided on a side of the semiconductor wafer in contact with the protective portion. When the radius of the semiconductor wafer is d mm, the width of the foaming region, i.e., the region where the protective portion foams, is b mm, and the width of the deterioration region, i.e., the region where the hard non-adhesive material deteriorates, is c mm, the vacuum adsorption region has a radius that is {d - (b + c)} / d times the radius of the semiconductor wafer and is included in a circle centered on the same center as the semiconductor wafer.

[0007] In addition, the method for manufacturing a semiconductor device according to the present disclosure includes: a protection part forming step of forming a protection part on a semiconductor wafer; a placing step of placing the semiconductor wafer on a platform having a hard non-adhesive material and a vacuum adsorption area in such a manner that the protection part contacts the hard non-adhesive material. When the radius of the semiconductor wafer is d mm, the width of the foaming area where the protection part foams is b mm, and the width of the deteriorated area where the hard non-adhesive material deteriorates is c mm, the vacuum adsorption area has a radius that is {d - (b + c)} / d times the radius of the semiconductor wafer and is accommodated within a circle centered on the same center as the semiconductor wafer; a heat treatment step of performing heat treatment by irradiating laser light from the side opposite to the side of the semiconductor wafer that contacts the platform; and a lifting step of moving a lifting pin provided on the platform to separate the semiconductor wafer from the platform. Advantages of the Invention

[0008] According to the semiconductor manufacturing apparatus related to the present disclosure, it is possible to easily separate the semiconductor wafer from the platform. In addition, according to the method for manufacturing a semiconductor device related to the present disclosure, it is possible to easily separate the semiconductor wafer from the platform. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 is a top view of a semiconductor manufacturing apparatus according to Embodiment 1 of the present disclosure. Figure 2 is a cross-sectional view of a semiconductor manufacturing apparatus and a semiconductor wafer according to Embodiment 1 of the present disclosure. Figure 3 is a cross-sectional view of a semiconductor manufacturing apparatus and a semiconductor wafer according to Embodiment 1 of the present disclosure. Figure 4 is a cross-sectional view of a semiconductor manufacturing apparatus and a semiconductor wafer according to Embodiment 1 of the present disclosure. Figure 5 is a diagram illustrating the vacuum adsorption area of the semiconductor manufacturing apparatus according to Embodiment 1 of the present disclosure. Figure 6 is a diagram illustrating the vacuum adsorption area of the semiconductor manufacturing apparatus according to Embodiment 1 of the present disclosure. Figure 7 is a structural diagram of a semiconductor manufacturing apparatus according to Embodiment 1 of the present disclosure. Figure 8 is a diagram showing the method for manufacturing a semiconductor device according to Embodiment 1 of the present disclosure. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0010] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. The drawings are schematically shown, and the mutual relationships of dimensions and positions respectively shown in different drawings are not necessarily limited to the described contents and may be appropriately changed. In addition, in the following description, the same reference numerals are assigned to the same structural elements for illustration, and their names and functions are also set to be the same or equivalent. Thus, the detailed description thereof may sometimes be omitted.

[0011] Embodiment 1 Use Figures 1 to 7 The semiconductor manufacturing apparatus 101 in Embodiment 1 will be described. Figure 1 It is a top view of the semiconductor manufacturing apparatus 101 according to Embodiment 1.

[0012] As Figure 1 shown, the semiconductor manufacturing apparatus 101 according to the present embodiment includes a platform 1 and lift pins 2. A semiconductor wafer described later is placed on the upper surface of the platform 1. Taking the platform 1 as a reference, the side where the semiconductor wafer is set is taken as the upper surface. In Figure 1 this, the front side of the paper surface is the upper surface. The surface different from the upper surface, that is, the opposite side of the upper surface, is taken as the lower surface. In addition, the direction passing through the upper surface and the lower surface is taken as the thickness direction. In addition, the surfaces other than the upper surface and the lower surface are taken as side surfaces. The same applies in the following description.

[0013] The platform 1 includes suction holes 3, through holes 4, and an end portion 5. A semiconductor wafer described later is placed on the platform 1. The platform 1 is, for example, circular. The platform 1 may not be circular, for example, it may be quadrilateral, or a polygon other than quadrilateral. In addition, the platform 1 may be oval, or may be a shape combining multiple curves and straight lines. The platform 1 is formed of quartz, for example. The platform 1 may also be formed of glass.

[0014] The platform 1 includes suction holes 3. The suction holes 3 are provided, for example, in the central portion of the platform 1. The suction holes 3 are holes opened on the upper surface of the platform 1. For example, a plurality of suction holes 3 are provided. The plurality of suction holes 3 are arranged on the circumference, for example. The circumference where the plurality of suction holes 3 are provided has the center of the platform 1 as the center of the circle. The suction holes 3 are arranged on the circumferences of a plurality of concentric circles, for example. The suction holes 3 may not be arranged on the circumference.

[0015] The semiconductor wafer 6 is adsorbed on the platform 1, and the fixed area is taken as the vacuum adsorption area. Inside the vacuum adsorption area, suction holes 3 for fixing the semiconductor wafer 6 to the platform 1 are provided. The vacuum adsorption area is, for example, the inside of a circle having the same center as the center of the platform 1. In Figure 1 this, the vacuum adsorption area is shown as the inside of circle A. The vacuum adsorption area may not be circular.

[0016] The platform 1 includes a through-hole 4. The through-hole 4 is provided, for example, at the central portion of the platform 1. For example, a plurality of through-holes 4 are provided. For example, 4 through-holes 4 are provided. The plurality of suction holes 4 are arranged, for example, on the circumference. The through-hole 4 is provided, for example, closer to the end portion 5 of the platform 1 than the suction hole 3 at the center among the plurality of suction holes 3 provided on the platform 1.

[0017] The semiconductor manufacturing apparatus 101 includes lift pins 2. The lift pins 2 are provided, for example, at the central portion of the platform 1. For example, a plurality of lift pins 2 are provided. For example, 4 lift pins 2 are provided. The lift pins 2 are respectively received in the through-holes 4. The lift pins 2 move up and down in the through-holes 4. That is, the lift pins 2 move in the thickness direction in the through-holes 4. The lift pins 2 are connected to a drive device (not shown) and move up and down in the through-holes 4, for example.

[0018] Figure 2 It is a cross-sectional view of the semiconductor manufacturing apparatus 101 and the semiconductor wafer 6 according to Embodiment 1. As Figure 2 shown, the semiconductor wafer 6 is provided on the upper surface of the platform 1. In Figure 2 , the upper side of the paper surface is the upper surface, and the lower side of the paper surface is the lower surface.

[0019] The semiconductor wafer 6 includes a protection portion 7. The protection portion 7 is provided on the lower surface side of the semiconductor wafer 6. The semiconductor wafer 6 is placed on the upper surface of the platform 1 with the protection portion 7 provided on the lower surface side. The protection portion 7 is in contact with the platform 1. The semiconductor wafer 6 is placed on the platform 1 in such a manner that the protection portion 7 is in contact with the platform 1.

[0020] The protection portion 7 protects the semiconductor wafer 6. In addition, the protection portion 7 insulates the semiconductor wafer 6 from the platform 1. The protection portion 7 is formed of resin, for example. The protection portion 7 may be formed of other materials as long as it has insulating properties. For example, the protection portion 7 may also be a heat-resistant tape having insulating properties.

[0021] As Figure 2 shown, the platform 1 includes a hard non-adhesive material 8. The hard non-adhesive material 8 is provided on the upper surface of the platform 1. The hard non-adhesive material 8 is provided on the side in contact with the protection portion 7 of the semiconductor wafer 6. The hard non-adhesive material 8 is provided on the entire upper surface of the platform 1. The hard non-adhesive material 8 may also be provided only on the upper surface of the platform 1, particularly on the side closer to the end portion 5 of the platform 1 than the vacuum suction area.

[0022] The hard non-adhesive material 8 is provided by coating on the platform 1, for example. The hard non-adhesive material 8 uses a material containing silicon and oxygen, for example. The hard non-adhesive material 8 mainly consists of silicon and oxygen, for example. The hard non-adhesive material 8 may contain materials other than silicon and oxygen.

[0023] The adsorption holes 3 include, for example, an opening 31 and another opening 32. One opening 31 is provided on the upper surface of the platform 1. The other opening 32 is provided on the lower surface of the platform 1. As Figure 2 shown, the adsorption holes 3 are provided, for example, in a manner that penetrates from the upper surface to the lower surface of the platform 1. The adsorption holes 3 can also be provided inside the platform 1 in a manner that connects to other adsorption holes 3. That is, multiple openings 31 can also be provided, and the number of the other opening 32 is set to be less than that of the one opening. In addition, the other opening 32 can be provided on the side surface of the platform 1 or in the area of the upper surface of the platform 1 where the semiconductor wafer 6 is not placed.

[0024] One opening 31 of the adsorption hole 3 is provided in contact with the protection part 7 of the semiconductor wafer 6. The other opening 32 of the adsorption hole 3 is connected to a vacuum pump (not shown), for example. By driving the vacuum pump, air is discharged from the adsorption hole 3, and the semiconductor wafer 6 is adsorbed on the platform 1. That is, by providing the adsorption hole 3 and discharging the air inside the adsorption hole 3, the platform 1 can hold the semiconductor wafer 6. That is, since the semiconductor manufacturing apparatus 101 has a vacuum adsorption area, the semiconductor wafer 6 can be fixed on the platform 1.

[0025] The through hole 4 is a hole that penetrates from the upper surface to the lower surface of the platform 1. The lifting pin 2 is accommodated in the through hole 4. The lifting pin 2 is provided to penetrate from the upper surface to the lower surface of the platform 1. The lifting pin 2 is accommodated and provided in the through hole 4. The lifting pin 2 is connected to a drive device (not shown) on the lower surface side, for example. The lifting pin 2 can move up and down by the drive device.

[0026] Figure 3 is a side view of the semiconductor manufacturing apparatus 101 and the semiconductor wafer 6 according to Embodiment 1. Figure 3 shows a case where the lifting pin 2 is moved upward with respect to the Figure 2 state shown.

[0027] By moving the lifting pin 2 upward, the semiconductor manufacturing apparatus 101 can lift the semiconductor wafer 6 upward. That is, by moving the lifting pin 2 upward, the semiconductor manufacturing apparatus 101 can separate the semiconductor wafer 6 from the platform 1. That is, the lifting pin 2 moves the semiconductor wafer 6 in a direction away from the platform 1.

[0028] Figure 4 is a cross-sectional view of the semiconductor manufacturing apparatus 101 and the semiconductor wafer 6 according to Embodiment 1. Figure 4 shows a part of the platform 1 and the semiconductor wafer 6. Figure 4 O shown is the center of the semiconductor wafer 6. Figure 4 is a view showing a cross-section including the center O of the semiconductor wafer 6.Figure 4 Reference numeral 5 denotes the distance from the center to the end of the stage 1. The area on the stage 1 where the semiconductor wafer 6 is sucked is a vacuum suction area. Preferably, the center of the stage 1 coincides with the center of the semiconductor wafer 6.

[0029] Figure 4 The arrow shown schematically indicates the direction in which the laser beam emitted from a laser device described later is irradiated. The laser is irradiated from the upper surface of the semiconductor wafer 6. That is, the laser is irradiated from the side opposite to the side where the semiconductor wafer 6 and the stage 1 are in contact. In addition, the laser is irradiated from the side of the semiconductor wafer 6 opposite to the side where the protection part 7 is provided. The laser is irradiated from the entire upper surface of the semiconductor wafer 6. The semiconductor wafer 6 is heat-treated by irradiating the laser. That is, the semiconductor wafer 6 is subjected to laser annealing treatment.

[0030] The foaming area B is an area where the protection part 7 of the semiconductor wafer 6 is likely to foam. When the laser annealing treatment is performed, the temperature of the semiconductor wafer 6 is about 1200°C. Since the temperature of the semiconductor wafer 6 is about 1200°C, the protection part 7 may foam. In addition, when the temperature of the semiconductor wafer 6 is higher than about 1200°C, the possibility of the protection part 7 foaming is further increased.

[0031] In addition, even when the temperature of the semiconductor wafer 6 is less than about 1200°C, if the size of the semiconductor wafer 6 in the thickness direction is small, heat is likely to be transferred to the protection part 7, and the possibility of the protection part 7 foaming is high. The smaller the size of the semiconductor wafer 6 in the thickness direction, the more likely the protection part 7 is to foam. For example, when the size of the semiconductor wafer 6 in the thickness direction is 60 μm or less, the protection part 7 is more likely to foam.

[0032] In addition, when the intensity of the laser is such that the temperature of the semiconductor wafer 6 is about 1200°C, the protection part 7 may foam. In addition, since the temperature of the semiconductor wafer 6 during the laser annealing treatment tends to increase when the intensity of the laser is high, when the intensity of the laser is greater than the intensity at which the temperature of the semiconductor wafer 6 is about 1200°C, the possibility of the protection part 7 foaming is further increased.

[0033] In the vacuum suction area, the stage 1 and the semiconductor wafer 6 are in close contact. In addition, on the lower surface side of the stage 1, for example, a cooling device (not shown) is provided. Therefore, in the vacuum suction area, since the stage 1 and the semiconductor wafer 6 are in close contact, it is easy to cool the semiconductor wafer 6.

[0034] On the other hand, since the platform 1 and the semiconductor wafer 6 are not in close contact with the periphery of the vacuum adsorption area, it is difficult to cool the semiconductor wafer 6. In addition, in the periphery of the vacuum adsorption area, the distance between the platform 1 and the semiconductor wafer 6 is close, and heat is likely to remain between the platform 1 and the semiconductor wafer 6. Therefore, foaming of the protective part 7 is particularly likely to occur in the periphery of the vacuum adsorption area. The area that is particularly likely to cause foaming of the protective part 7 is the foaming area B.

[0035] When the protective part 7 foams, the protective part 7 is likely to stick to the platform 1. If the foamed protective part 7 sticks to the platform 1, it is difficult to separate the semiconductor wafer 6 from the platform 1. In the past, when a semiconductor wafer was adhered to a platform and the semiconductor wafer was separated from the platform after heat treatment, side floating occurred where the semiconductor wafer did not leave the platform or only a part of the semiconductor wafer left the platform, and the semiconductor wafer might be damaged.

[0036] In addition, when a semiconductor wafer is adhered to a platform and the semiconductor wafer is separated from the platform after heat treatment, side floating occurs where the semiconductor wafer does not leave the platform or only a part of the semiconductor wafer left the platform. Since it cannot be correctly delivered to the transfer device for transferring the semiconductor wafer, the transfer device may stop.

[0037] The hard non-adhesive material 8 can reduce the possibility of the semiconductor wafer 6 sticking to the platform 1 when the protective part 7 foams. That is, by including the hard non-adhesive material 8, the semiconductor manufacturing apparatus 101 can reduce the situation where the semiconductor wafer 6 sticks to the platform 1, and can reduce the possibility of the semiconductor wafer 6 being damaged and the possibility of the transfer device stopping. In particular, the semiconductor manufacturing apparatus 101 includes the hard non-adhesive material 8 in the periphery of the vacuum adsorption area where the protective part 7 is likely to foam. Thus, when the protective part 7 foams, the possibility of the semiconductor wafer 6 sticking to the platform 1 can be further reduced.

[0038] The deterioration area C is an area where the hard non-adhesive material 8 provided on the platform 1 is likely to deteriorate. Since the hard non-adhesive material 8 is not heat-resistant, it may deteriorate through heat treatment. That is, there is a possibility that the non-adhesiveness decreases. In particular, since the portion near the end 5 of the platform 1 is easily irradiated with laser light, the hard non-adhesive material 8 is likely to deteriorate.

[0039] When the hard non-adhesive material 8 deteriorates, when the protective part 7 foams, the effect of reducing the situation where the semiconductor wafer 6 adheres to the platform 1 becomes smaller, and the possibility of the semiconductor wafer 6 adhering to the platform 1 becomes larger.

[0040] As Figure 4As shown, the foaming region B of the semiconductor manufacturing apparatus 101 of the present embodiment is provided in a region that does not overlap with the deterioration region C. By having the foaming region B not overlap with the deterioration region C, foaming of the protection portion 7 does not occur in the deterioration region C, and the possibility of the semiconductor wafer 6 sticking to the stage 1 can be reduced. That is, the semiconductor wafer 6 can be easily separated from the stage 1. Therefore, the possibility of breakage of the semiconductor wafer 6 and the possibility of stoppage of the transfer device can be reduced.

[0041] Figure 5 It is a diagram for explaining the vacuum adsorption region of the semiconductor manufacturing apparatus 101 according to Embodiment 1. Figure 5 Schematically shows the surface of the stage 1 in contact with the semiconductor wafer 6. In Figure 5 , the circles A, D, E, and F are concentric circles with the center O. In addition, let the radius of circle A be a, the radius of circle D be d, the radius of circle E be e, and the radius of circle F be f. The vacuum adsorption region is set to the inside of circle A. In addition, the direction toward the center O is set as the inner side, and the direction away from the center O is set as the outer side.

[0042] The foaming region B is generated around the vacuum adsorption region. The foaming region B is generated in a portion around the vacuum adsorption region of about 20 mm. Let the width of the foaming region B where the protection portion 7 generates foaming be b. In Figure 5 , since the vacuum adsorption region is the inside of circle A, the foaming region B becomes a region surrounded by a line representing the circumference of a circle (circle E) whose radius is larger than that of circle A by b and a line representing the circumference of circle A. The foaming region B is, for example, an annular region generated outside the vacuum adsorption region.

[0043] The deterioration region C is generated in a portion about 20 mm from the outer periphery of the semiconductor wafer 6 toward the inside. Let the width of the deterioration region C where the hard non-adhesive material 8 deteriorates be c. If the semiconductor wafer 6 is a circle with a radius d that overlaps with circle D, then in Figure 5 , the deterioration region C becomes a region surrounded by a line representing the circumference of a circle (circle F) whose radius is smaller than that of circle D by c and a line representing the circumference of circle D. The deterioration region C is, for example, an annular region generated inside the outer periphery of the semiconductor wafer 6.

[0044] Since foaming of the protection portion 7 easily occurs around the vacuum adsorption region, the foaming region B is determined by the vacuum adsorption region. That is, when the position of the vacuum adsorption region changes, the position of the foaming region B also changes. That is, by adjusting the position of the vacuum adsorption region, the position of the foaming region B can be adjusted. In the case where the vacuum adsorption region is a small region with respect to the semiconductor wafer 6, as in Figure 5As shown, since the foaming region B and the deterioration region C do not overlap, foaming of the protection part 7 will not occur in the deterioration region C, and the possibility of the semiconductor wafer 6 adhering to the platform 1 can be reduced. That is, the semiconductor wafer 6 can be easily separated from the platform 1. Therefore, the possibility of breakage of the semiconductor wafer 6 and the possibility of the transfer device stopping can be reduced.

[0045] Figure 6 It is a diagram showing the vacuum adsorption region of the semiconductor manufacturing apparatus 101 according to Embodiment 1. Figure 6 Schematically shows the surface where the platform 1 contacts the semiconductor wafer 6. In Figure 6 it, the circles D, F, and G are concentric circles with the center O. In addition, let the radius of the circle D be d, the radius of the circle F be f, and the radius of the circle G be g.

[0046] The hard non-adhesive material 8 deteriorates in the deterioration region C with a width c from the outer periphery of the semiconductor wafer 6 toward the inside. That is, the deterioration region C becomes a region surrounded by a line representing the circumference of the circle F whose radius is smaller than the circle D by c and a line representing the circumference of the circle D.

[0047] The protection part 7 foams in the foaming region B with a width b from the outer periphery of the vacuum adsorption region toward the outside. If the foaming region B is generated directly inside the deterioration region C, the foaming region B becomes a region surrounded by a line representing the circumference of the circle G whose radius is smaller than the circle F by b and a line representing the circumference of the circle F.

[0048] In order not to overlap the foaming region B and the deterioration region C, it is only necessary to accommodate the vacuum adsorption region inside the circle G with a radius g = {d - (b + c)}. That is, it is only necessary to accommodate the vacuum adsorption region inside a circle having a radius that is {d - (b + c)} / d times the radius of the semiconductor wafer 6 and having the same center as the semiconductor wafer 6. The vacuum adsorption region only needs to have a sufficient area for fixing the semiconductor wafer 6 to the platform 1. That is, the vacuum adsorption region has a radius of {d - (b + c)} / d times and has an area sufficient to fix the semiconductor wafer 6 to the platform 1.

[0049] In this embodiment, semiconductor wafers of any size can be used. For example, in the case of using a 12-inch semiconductor wafer, if it is considered that d = 150 mm, b = 20 mm, and c = 20 mm, it is only necessary to accommodate the vacuum adsorption region inside a circle having a radius that is 11 / 15 times the radius of the semiconductor wafer and having the same center as the semiconductor wafer.

[0050] In addition, in the case of using an 8-inch semiconductor wafer, if it is considered that d = 100 mm, b = 20 mm, and c = 20 mm, it is sufficient to accommodate the vacuum adsorption region inside a circle having a radius 3 / 5 times the radius of the semiconductor wafer and centered at the same center as the semiconductor wafer.

[0051] In addition, in the case of using a 6-inch semiconductor wafer, if it is considered that d = 75 mm, b = 20 mm, and c = 20 mm, it is sufficient to accommodate the vacuum adsorption region inside a circle having a radius 7 / 15 times the radius of the semiconductor wafer and centered at the same center as the semiconductor wafer.

[0052] By accommodating the vacuum adsorption region inside a circle having a radius of {d - (b + c)} / d times the radius of semiconductor wafer 6 and centered at the same center as semiconductor wafer 6, the foaming region B can be made closer to the center of the stage 1, and thus the foaming region B and the deterioration region C can be prevented from overlapping. That is, foaming of the protection part 7 in the deterioration region C can be prevented. Thereby, the possibility of the semiconductor wafer 6 adhering to the stage 1 can be reduced, and the semiconductor wafer 6 can be easily separated from the stage 1. Therefore, the possibility of breakage of the semiconductor wafer 6 and the possibility of the transfer device stopping can be reduced.

[0053] In addition, by accommodating the vacuum adsorption region inside a circle having a radius of {d - (b + c)} / d times the radius of semiconductor wafer 6 and centered at the same center as semiconductor wafer 6, the foaming region B can be made closer to the center of the stage 1. Therefore, even if the semiconductor wafer 6 adheres to the stage 1 in the foaming region B, the foaming region B can be generated near the lifting pin 2 provided at the central portion of the stage 1, and thus the semiconductor wafer 6 can be easily separated from the stage 1.

[0054] Figure 7 It is a structural diagram of a semiconductor manufacturing apparatus 101 according to Embodiment 1. The semiconductor manufacturing apparatus 101 includes a stage 1 and a laser device. The laser device includes a first laser oscillator 51, a second laser oscillator 52, a separator 53, a first measurement member 54, a chamber 55, a profiler 56, a plotter 57, a mirror 61, a mirror 62, a mirror 63, a mirror 64, a mirror 65, and a mirror 66.

[0055] The first laser oscillator 51 and the second laser oscillator 52 output laser light. The laser light output from the first laser oscillator 51 is reflected by the mirrors 61 and 62 and reaches the separator 53. The laser light output from the second laser oscillator 52 is reflected by the mirrors 63 and 64 and reaches the separator 53. The separator 53 overlaps the laser light output from the first laser oscillator 51 with the laser light output from the second laser oscillator 52. In addition, the separator 53 separates the overlapping laser light in two directions.

[0056] The laser light overlapped by the separator 53 is separated by the separator 53 in two directions. One of the separated laser lights reaches the first measurement member 54. The other of the separated laser lights reaches the mirror 65 and is further separated in two directions.

[0057] One of the laser lights separated in two directions by the mirror 65 reaches the chamber 55. A stage 1 is provided inside the chamber 55. A semiconductor wafer 6 is placed on the upper surface of the stage 1. The laser light reaching the chamber 55 is irradiated onto the semiconductor wafer 6 provided on the upper surface of the stage 1.

[0058] The other of the laser lights separated in two directions by the mirror 65 is further separated in two directions by the mirror 66. One of the laser lights separated in two directions by the mirror 66 reaches the second measurement member, i.e., the profiler 56. The other of the laser lights separated in two directions by the mirror 66 reaches the chamber 57.

[0059] The first laser oscillator 51 and the second laser oscillator 52 output pulsed laser beams with a time difference. The first laser oscillator 51 and the second laser oscillator 52 output pulsed laser beams having a wavelength of, for example, 300 to 600 nm. The pulsed laser beams output from the first laser oscillator 51 and the second laser oscillator 52 are, for example, the second harmonic of a Nd:YLF laser having a wavelength of 572 nm. The number of laser oscillators may not be two. Only one laser oscillator may be provided, or three or more laser oscillators may be provided.

[0060] Next, a method for manufacturing a semiconductor device will be described. Figure 8 It is a flowchart showing a method for manufacturing a semiconductor device according to Embodiment 1. First, a semiconductor element forming step (ST1) of forming a semiconductor element on the semiconductor wafer 6 is performed. In the semiconductor element forming step, an ion implantation step of implanting impurity ions from a surface that becomes the upper surface or the lower surface of the semiconductor wafer 6 is performed, etc. The semiconductor element formed on the semiconductor wafer 6 is a power semiconductor. The power semiconductor is, for example, a diode element, a switching element, or the like.

[0061] The semiconductor wafer 6 can be formed using, for example, silicon. In addition, in the formation of the semiconductor wafer 6, for example, a wide bandgap semiconductor having a larger bandgap than silicon, such as silicon carbide, a material containing gallium nitride, a material containing gallium oxide, and diamond, can also be used.

[0062] Next, in order to protect the surface of the semiconductor wafer 6, a protection part forming step (ST2) of forming a protection part 7 on the surface of the semiconductor wafer 6 is performed. The protection part 7 is formed of, for example, resin. The protection part 7 only needs to have insulation properties and may be formed of other materials than resin.

[0063] Next, a mounting process (ST3) is performed to mount the semiconductor wafer 6 on the upper surface of the stage 1 of the semiconductor manufacturing apparatus 101. When mounting the semiconductor wafer 6 on the upper surface of the stage 1, the semiconductor wafer 6 is mounted on the stage 1 such that the protection portion 7 of the semiconductor wafer 6 is on the side of the stage 1.

[0064] Next, a heat treatment process (ST4) is performed to irradiate the semiconductor wafer 6 with laser light output from the laser device of the semiconductor manufacturing apparatus 101. The heat treatment performed in ST4 is particularly a laser annealing treatment. In the heat treatment process, the impurity ions implanted into the semiconductor wafer 6 are activated.

[0065] The heat treatment process needs to be performed at high power. The so-called high power is, for example, 1 W or more. By performing the heat treatment at high power, the possibility of foaming in the protection portion 7 increases, but by using the semiconductor manufacturing apparatus 101 according to the present embodiment, the situation where the semiconductor wafer 6 adheres to the stage 1 can be suppressed. By suppressing the adhesion of the semiconductor wafer 6 to the stage 1, it is easy to separate the semiconductor wafer 6 from the stage 1, thereby improving the productivity of the semiconductor device.

[0066] In addition, when heat-treating a semiconductor wafer 6 formed of a wide-bandgap semiconductor such as SiC, since the laser annealing treatment is performed at a temperature higher than that of silicon, the temperature of the semiconductor wafer 6 is about 1200 °C. By setting the temperature of the semiconductor wafer 6 to about 1200 °C, there is a possibility that the protection portion 7 foams, but by using the semiconductor manufacturing apparatus 101 according to the present embodiment, the situation where the semiconductor wafer 6 adheres to the stage 1 can be suppressed. By suppressing the adhesion of the semiconductor wafer 6 to the stage 1, it is easy to separate the semiconductor wafer 6 from the stage 1, thereby improving the productivity of the semiconductor device.

[0067] In the heat treatment process (ST4), the semiconductor wafer 6 can be irradiated with laser light at an angle less than 90°. By irradiating the semiconductor wafer 6 with laser light at an angle less than 90°, the situation where the laser device is damaged due to the laser light reflected by the semiconductor wafer 6 can be suppressed. The so-called irradiation of the semiconductor wafer 6 at an angle less than 90° means, for example, irradiating the semiconductor wafer 6 with laser light at an angle of about 80 to 89°. That is, the laser light is irradiated onto the semiconductor wafer 6 in a state where it is inclined by about 1 to 10°.

[0068] In addition, in the heat treatment process (ST4), the semiconductor wafer 6 can also be irradiated with a laser vertically. By irradiating the semiconductor wafer 6 with a laser vertically, the situation where the laser directly irradiates the hard non - adhesive material 8 on the stage 1 can be suppressed. Thereby, the deterioration of the hard non - adhesive material 8 can be suppressed. Therefore, the situation where the semiconductor wafer 6 adheres to the stage 1 can be suppressed, and it is easy to separate the semiconductor wafer 6 from the stage 1. The so - called vertical irradiation of the semiconductor wafer 6 means that even if the angle with respect to the semiconductor wafer 6 is not exactly 90°, as long as it is an angle that can suppress the deterioration of the hard non - adhesive material 8.

[0069] The surface of the stage 1 that contacts the semiconductor wafer 6 can also be smaller than the surface of the semiconductor wafer 6 that contacts the stage 1. The surface of the stage 1 that contacts the semiconductor wafer 6 is smaller than the surface of the semiconductor wafer 6 that contacts the stage 1, thereby suppressing the situation where the laser directly irradiates the hard non - adhesive material 8. Thereby, the deterioration of the hard non - adhesive material 8 can be suppressed. Therefore, the situation where the semiconductor wafer 6 adheres to the stage 1 can be suppressed, and it is easy to separate the semiconductor wafer 6 from the stage 1.

[0070] Next, the lift pins 2 are raised from the lower surface side to the upper surface side of the stage 1 to perform a lifting process (ST5) for separating the semiconductor wafer 6 from the stage 1. In the lifting process (ST5), the semiconductor manufacturing apparatus 101 can lift the semiconductor wafer 6 all at once.

[0071] In addition, in the lifting process (ST5), the semiconductor manufacturing apparatus 101 can raise the lift pins 2 in multiple stages step - by - step. For example, the semiconductor manufacturing apparatus 101 can raise the lift pins 2 by 0.5 mm, then stop rising for 5 seconds, and after stopping rising for 5 seconds, raise the lift pins 2 by 0.5 mm again. The rising and stopping of the lift pins 2 can be repeated any number of times. By being able to raise the lift pins 2 in multiple stages step - by - step, even when the semiconductor wafer 6 is adhered to the stage 1, the semiconductor wafer 6 can be gradually separated from the stage 1. Thereby, the breakage of the semiconductor wafer 6 can be suppressed.

[0072] In addition, the semiconductor manufacturing apparatus 101 can raise the lift pins 2 at a slower speed than before. By raising the lift pins 2 at a slower speed than before, even when the semiconductor wafer 6 is adhered to the stage 1, the semiconductor wafer 6 can be gradually separated from the stage 1. Thereby, the breakage of the semiconductor wafer 6 can be suppressed.

[0073] The semiconductor manufacturing apparatus 101 according to this embodiment includes a stage 1 having a vacuum adsorption region and a hard non-adhesive material 8, and mounts a semiconductor wafer 6 in contact with a protection part 7. The vacuum adsorption region has the protection part 7 for fixing the semiconductor wafer 6 irradiated with laser light. The hard non-adhesive material 8 is provided on the side of the semiconductor wafer 6 in contact with the protection part 7. When the radius of the semiconductor wafer 6 is d mm, the width of the foaming region B where the protection part 7 foams is b mm, and the width of the deterioration region C where the hard non-adhesive material 8 deteriorates is c mm, the vacuum adsorption region has a radius that is {d-(b + c)} / d times the radius of the semiconductor wafer 6 and is accommodated in a circle centered on the same center as the semiconductor wafer 6, so that the semiconductor wafer 6 can be easily separated from the stage 1.

[0074] In addition, the method for manufacturing a semiconductor device according to this embodiment includes: a protection part forming step of forming a protection part 7 on the semiconductor wafer 6; a mounting step of mounting the semiconductor wafer 6 on a stage having a hard non-adhesive material 8 and a vacuum adsorption region in such a manner that the protection part 7 is in contact with the hard non-adhesive material 8. When the radius of the semiconductor wafer 6 is d mm, the width of the foaming region B where the protection part 7 foams is b mm, and the width of the deterioration region C where the hard non-adhesive material 8 deteriorates is c mm, the vacuum adsorption region has a radius that is {d-(b + c)} / d times the radius of the semiconductor wafer 6 and is accommodated in a circle centered on the same center as the semiconductor wafer 6; a heat treatment step of performing heat treatment by irradiating laser light from the side opposite to the side of the semiconductor wafer 6 in contact with the stage 1; and a lifting step of moving a lift pin 2 provided on the stage 1 to separate the semiconductor wafer 6 from the stage 1, so that the semiconductor wafer 6 can be easily separated from the stage 1.

[0075] In the above-described embodiments described in this specification, the material, material, size, shape, relative arrangement relationship, or implementation conditions of each structural element may sometimes be described, but they are all examples in all respects and are not limited to the described embodiments. Therefore, it can be considered that countless deformation examples not illustrated are also included in the scope of each embodiment. For example, it includes cases where any structural element is deformed, added, or omitted, and cases where at least one structural element in at least one embodiment is extracted and combined with the structural elements of other embodiments.

[0076] As described above, the preferred embodiments and the like have been described in detail, but are not limited by the above-described embodiments and the like, and various deformations and substitutions can be made to the above-described embodiments and the like without departing from the scope described in the claims.

[0077] Hereinafter, each aspect of the present disclosure will be summarized and described as an appended note.

[0078] (Appended Note 1) A semiconductor manufacturing apparatus, including a stage that has a vacuum adsorption area and a hard non-adhesive material, and mounts a semiconductor wafer in contact with a protection part. The vacuum adsorption area has the protection part and fixes the semiconductor wafer irradiated with laser. The hard non-adhesive material is provided on a side of the semiconductor wafer in contact with the protection part. When the radius of the semiconductor wafer is d mm, the width of the foaming area where the protection part foams is b mm, and the width of the deteriorated area where the hard non-adhesive material deteriorates is c mm, the vacuum adsorption area has a radius that is {d - (b + c)} / d times the radius of the semiconductor wafer and is accommodated within a circle centered on the center of the semiconductor wafer. (Appended Note 2) The semiconductor manufacturing apparatus according to Appended Note 1, when the semiconductor wafer is 12 inches, the vacuum adsorption area is accommodated within a circle that has a radius that is 11 / 15 times the radius of the semiconductor wafer and is centered on the center of the semiconductor wafer. (Appended Note 3) The semiconductor manufacturing apparatus according to Appended Note 1, when the semiconductor wafer is 8 inches, the vacuum adsorption area is accommodated within a circle that has a radius that is 3 / 5 times the radius of the semiconductor wafer and is centered on the center of the semiconductor wafer. (Appended Note 4) The semiconductor manufacturing apparatus according to Appended Note 1, when the semiconductor wafer is 6 inches, the vacuum adsorption area is accommodated within a circle that has a radius that is 7 / 15 times the radius of the semiconductor wafer and is centered on the center of the semiconductor wafer. (Appended Note 5) The semiconductor manufacturing apparatus according to any one of Appended Notes 1 to 4, the stage has adsorption holes for adsorbing the semiconductor wafer. (Appended Note 6) The semiconductor manufacturing apparatus according to any one of Appended Notes 1 to 5, a surface of the stage in contact with the semiconductor wafer is smaller than a surface of the semiconductor wafer in contact with the stage. (Appended Note 7) The semiconductor manufacturing apparatus according to any one of Appended Notes 1 to 6, the stage has lift pins within the vacuum adsorption area, and the lift pins move the semiconductor wafer in a direction to separate the semiconductor wafer from the stage. (Appended Note 8) The semiconductor manufacturing apparatus according to any one of Appended Notes 1 to 7, the hard non-adhesive material contains a material containing silicon and oxygen. (Supplementary Note 9) The semiconductor manufacturing apparatus according to any one of Supplementary Notes 1 to 8, further includes a laser device that irradiates the semiconductor wafer with the laser. (Supplementary Note 10) A method for manufacturing a semiconductor device, comprising: a protective portion forming step of forming a protective portion on a semiconductor wafer; a placing step of placing the semiconductor wafer on a stage having a hard non-adhesive material and a vacuum adsorption region such that the protective portion contacts the hard non-adhesive material. When the radius of the semiconductor wafer is d mm, the width of the foaming region where the protective portion foams is b mm, and the width of the deterioration region where the hard non-adhesive material deteriorates is c mm, the vacuum adsorption region has a radius that is {d-(b + c)} / d times the radius of the semiconductor wafer and is accommodated within a circle having the same center as the center of the semiconductor wafer; a heat treatment step of performing heat treatment by irradiating the laser from the side opposite to the side of the semiconductor wafer that contacts the stage; and a lifting step of moving a lift pin provided on the stage to separate the semiconductor wafer from the stage. (Supplementary Note 11) The method for manufacturing a semiconductor device according to Supplementary Note 10, the stage has adsorption holes for adsorbing the semiconductor wafer. (Supplementary Note 12) The method for manufacturing a semiconductor device according to Supplementary Note 10 or 11, in the lifting step, the lift pin is raised in multiple steps. (Supplementary Note 13) The method for manufacturing a semiconductor device according to any one of Supplementary Notes 10 to 12, in the heat treatment step, the laser is irradiated perpendicularly to the semiconductor wafer. Reference Numeral Explanation

[0079] 1 Stage, 2 Lift pin, 3 Adsorption hole, 4 Through hole, 5 End portion, 6 Semiconductor wafer, 7 Protective portion, 8 Hard non-adhesive material, 101 Semiconductor manufacturing apparatus.

Claims

1. A semiconductor manufacturing apparatus, characterized in that, it includes a platform which has a vacuum adsorption area and a hard non-adhesive material, and places a semiconductor wafer in contact with a protection part. The vacuum adsorption area has the protection part and fixes the semiconductor wafer irradiated with laser. The hard non-adhesive material is arranged on the side of the semiconductor wafer in contact with the protection part. When the radius of the semiconductor wafer is d mm, the width of the foaming area where the protection part foams is b mm, and the width of the deteriorated area where the hard non-adhesive material deteriorates is c mm, the vacuum adsorption area has a radius of {d - (b + c)} / d times the radius of the semiconductor wafer and is accommodated in a circle with the same center as the semiconductor wafer.

2. The semiconductor manufacturing apparatus according to claim 1, characterized in that, when the semiconductor wafer is 12 inches, the vacuum adsorption area is accommodated in a circle with a radius of 11 / 15 times the radius of the semiconductor wafer and having the same center as the semiconductor wafer.

3. The semiconductor manufacturing apparatus according to claim 1, characterized in that, when the semiconductor wafer is 8 inches, the vacuum adsorption area is accommodated in a circle with a radius of 3 / 5 times the radius of the semiconductor wafer and having the same center as the semiconductor wafer.

4. The semiconductor manufacturing apparatus according to claim 1, characterized in that, when the semiconductor wafer is 6 inches, the vacuum adsorption area is accommodated in a circle with a radius of 7 / 15 times the radius of the semiconductor wafer and having the same center as the semiconductor wafer.

5. The semiconductor manufacturing apparatus according to any one of claims 1 to 4, characterized in that, the platform has adsorption holes for adsorbing the semiconductor wafer.

6. The semiconductor manufacturing apparatus according to any one of claims 1 to 5, characterized in that, the surface of the platform in contact with the semiconductor wafer is smaller than the surface of the semiconductor wafer in contact with the platform.

7. The semiconductor manufacturing apparatus according to any one of claims 1 to 6, characterized in that, the platform has lifting pins in the vacuum adsorption area, and the lifting pins move the semiconductor wafer in a direction to separate the semiconductor wafer from the platform.

8. The semiconductor manufacturing apparatus according to any one of claims 1 to 7, characterized in that, the hard non-adhesive material contains a material containing silicon and oxygen.

9. The semiconductor manufacturing apparatus according to any one of claims 1 to 8, characterized in that, it further includes a laser device for irradiating the semiconductor wafer with the laser.

10. A method for manufacturing a semiconductor device, characterized in that, Comprising: a protection part forming process, which forms a protection part on the semiconductor wafer; Placement step, in which the semiconductor wafer is placed on a stage having a hard non-adhesive material and a vacuum adsorption area in such a manner that the protection part contacts the hard non-adhesive material. When the radius of the semiconductor wafer is d mm, the width of the foaming area, i.e., the area where the protection part foams, is b mm, and the width of the deterioration area, i.e., the area where the hard non-adhesive material deteriorates, is c mm, the vacuum adsorption area has a radius that is {d - (b + c)} / d times the radius of the semiconductor wafer and is enclosed within a circle centered on the same center as the semiconductor wafer; Heat treatment step, in which heat treatment is performed by irradiating laser light from the side opposite to the side of the semiconductor wafer that contacts the stage; and Lifting step, in which a lift pin provided on the stage is moved to separate the semiconductor wafer from the stage.

11. The method of manufacturing a semiconductor device according to claim 10, wherein the stage has adsorption holes for adsorbing the semiconductor wafer.

12. The method of manufacturing a semiconductor device according to claim 10 or 11, wherein in the lifting step, the lift pin is raised in multiple steps.

13. The method of manufacturing a semiconductor device according to any one of claims 10 to 12, wherein in the heat treatment step, the laser light is irradiated perpendicularly to the semiconductor wafer.

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