Manufacturing method of semiconductor device and semiconductor device

Abstract

The invention relates to a manufacturing method of a semiconductor device and the semiconductor device. The semiconductor device includes a wafer having a front surface and a back surface disposed opposite to each other, the wafer including a plurality of dies disposed on the front surface. The manufacturing method of the semiconductor device comprises the following steps: forming a protective film layer covering a plurality of tube cores on the front surface of a wafer; carrying out thinning processing on the back surface of the wafer; removing the protective film layer; if the preset size of the tube core is greater than the preset value, cleaning the front surface of the wafer to remove the first protective film layer residue left on the tube core; if the preset size of the tube core is smaller than or equal to the preset value, not cleaning the front surface of the wafer; wherein the preset size of the tube core refers to the size of the tube core in the direction parallel to the front face. According to the manufacturing method of the semiconductor device, the fragmentation risk of the wafer can be reduced, and the yield of the semiconductor device can be improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and particularly to a manufacturing method of a semiconductor device and a semiconductor device. Background Art

[0002] The wafer thinning process is a key process in the manufacturing of semiconductor devices. The purpose is to remove the excess material on the back of the wafer to effectively reduce the packaging volume of the wafer, lower the thermal resistance, and improve the heat dissipation performance of the semiconductor device. However, in the traditional manufacturing process of semiconductor devices, there is a problem of a relatively high risk of wafer fragmentation after thinning. Summary of the Invention

[0003] Based on this, it is necessary to provide a manufacturing method of a semiconductor device and a semiconductor device for the problem of a relatively high risk of wafer fragmentation after thinning in the traditional manufacturing process of semiconductor devices.

[0004] According to a first aspect of the present application, there is provided a manufacturing method of a semiconductor device. The semiconductor device includes a wafer having a front side and a back side disposed opposite to each other. The wafer includes a plurality of die disposed on the front side. The manufacturing method of the semiconductor device includes:

[0005] Forming a protective film layer covering the plurality of die on the front side of the wafer;

[0006] Performing a thinning process on the back side of the wafer;

[0007] Removing the protective film layer;

[0008] If a preset size of the die is greater than a preset value, cleaning the front side of the wafer to remove the residual first protective film layer residues on the die; if the preset size of the die is less than or equal to the preset value, not cleaning the front side of the wafer; wherein the preset size of the die refers to the size of the die in a direction parallel to the front side.

[0009] In some embodiments, before the step of if the preset size of the die is greater than a preset value, cleaning the front side of the wafer to remove the residual first protective film layer residues on the die; if the preset size of the die is less than or equal to the preset value, not cleaning the front side of the wafer, the manufacturing method of the semiconductor device further includes:

[0010] Determining whether the preset size of the die is greater than the preset value.

[0011] In some of these embodiments, the preset size of the die includes the size of the die along a first direction and the size of the die along a second direction, where the first direction and the second direction are perpendicular to each other and both are parallel to the front side;

[0012] Determining whether the preset size of the die is greater than a preset value includes:

[0013] Determining whether the size of the die along the first direction is greater than the preset value, and / or determining whether the size of the die along the second direction is greater than the preset value.

[0014] In some of these embodiments, the preset value is 3400 μm - 3600 μm.

[0015] In some of these embodiments, cleaning the front side of the wafer to remove the residue of the first protective film layer on the die includes: cleaning the front side of the wafer with a degumming solution for a first preset duration;

[0016] Wherein, the degumming solution is used to remove the residue of the first protective film layer;

[0017] The first preset duration is t1, and 100 seconds ≤ t1 ≤ 500 seconds.

[0018] In some of these embodiments, the degumming solution includes ethylene glycol and an etchant;

[0019] The mass ratio of the ethylene glycol to the etchant is greater than 4.

[0020] In some of these embodiments, after cleaning the front side of the wafer with the degumming solution for the first preset duration, cleaning the front side of the wafer to remove the residue of the first protective film layer on the die further includes:

[0021] Cleaning the front side of the wafer with deionized water for a second preset duration;

[0022] Wherein, the second preset duration is t2, and 600 seconds ≤ t2 ≤ 1200 seconds.

[0023] In some of these embodiments, the method for manufacturing a semiconductor device further includes:

[0024] Sending a first instruction to a size comparison system, where the first instruction includes product information of the semiconductor device;

[0025] Receiving a second instruction determined by the size comparison system based on the first instruction, where the second instruction is used to indicate whether to clean the front side of the wafer.

[0026] In some of these embodiments, the method for manufacturing a semiconductor device further includes:

[0027] Obtain a preset size of the die.

[0028] In some embodiments, the method for manufacturing the semiconductor device further includes:

[0029] Perform a defect scan on the front side of the wafer. If there is a residue of the second protective film layer on the die, clean the front side of the wafer to remove the residue of the second protective film layer.

[0030] According to a second aspect of the present application, there is provided a semiconductor device manufactured by using the method for manufacturing the semiconductor device according to any one of the above embodiments.

[0031] In the technical solution of the present application, after removing the protective film layer, if the preset size of the die is greater than a preset value, it indicates that there is a high possibility that there is a residue of the protective film layer on the die, and it is necessary to clean the front side of the wafer to remove the residue of the first protective film layer on the die; if the preset size of the die is less than or equal to the preset value, it indicates that there is a low possibility that there is a residue of the protective film layer on the die, and the step of cleaning the front side of the wafer to remove the residue of the first protective film layer on the die may not be performed. In this way, when the preset size of the die is less than or equal to the preset value, the step of cleaning the front side of the wafer can be omitted, thereby reducing the probability of the thinned wafer being fragmented during the cleaning process. Moreover, according to a large number of studies, if the preset size of the die is less than or equal to the preset value, the probability of the residue of the protective film layer remaining on the die can be reduced. Therefore, by using the method for manufacturing the semiconductor device of the present application, it is beneficial to reduce the risk of wafer fragmentation and improve the yield of the semiconductor device at the same time. Description of the Drawings

[0032] Figure 1 Shows a flowchart of a method for manufacturing a semiconductor device according to an embodiment of the present application.

[0033] Figure 2 Shows a distribution diagram of dies of different sizes in a wafer of the same specification.

[0034] Figure 3 Shows a functional relationship diagram between the number of dies and the number of residues in a wafer of the same specification.

[0035] Figure 4 Shows a relationship diagram between the size of the die, abnormal dies, and normal dies before using the method for manufacturing the semiconductor device of the present application.

[0036] Figure 5 Shows a relationship diagram between the size of the die, abnormal dies, and normal dies after using the method for manufacturing the semiconductor device of the present application.

[0037] Figure 6 Shows a partial flowchart of a method for manufacturing a semiconductor device according to another embodiment of the present application.

[0038] Figure 7 Shows another partial flowchart of a method for manufacturing a semiconductor device according to another embodiment of the present application.

[0039] Figure 8 Shows a trend chart of the fragmentation rate of a wafer before and after using the method for manufacturing a semiconductor device of the present application.

[0040] Reference numerals:

[0041] 10. Wafer; 11. Front side; 12. Die; 20. Residue. Detailed implementation manners

[0042] For ease of understanding of the present invention, the present invention will be described more comprehensively below with reference to the relevant drawings. Preferred embodiments of the present invention are shown in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided so that the disclosure of the present invention is thorough and complete.

[0043] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which the present invention belongs. The terms used herein in the description of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0044] It should be understood that when an element or layer is referred to as being "on", "adjacent to", "connected to" or "coupled to" another element or layer, it can be directly on, adjacent to, connected or coupled to the other element or layer, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on", "directly adjacent to", "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Thus, without departing from the teachings of the present invention, the first element, component, region, layer or part discussed below may be denoted as the second element, component, region, layer or part.

[0045] Spatial relationship terms such as "under", "below", "lower", "beneath", "above", "upper", etc. may be used herein for convenience of description to describe the relationship of one element or feature shown in the figures with other elements or features. It should be understood that, in addition to the orientation shown in the figures, spatial relationship terms are also intended to include different orientations of the device in use and operation. For example, if the device in the figures is flipped, then an element or feature described as "under other elements" or "beneath them" or "underneath them" will be oriented "on" the other elements or features. Thus, the exemplary terms "under" and "beneath" can include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial descriptors used herein are to be interpreted accordingly.

[0046] The purpose of the terms used herein is only to describe specific embodiments and not to limit the present invention. As used herein, the singular forms "a", "an" and "the" are also intended to include the plural forms unless the context clearly dictates otherwise. It should also be understood that the terms "comprising" and / or "including", when used in this specification, specify the presence of the stated features, integers, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups. As used herein, the term "and / or" includes any and all combinations of the associated listed items.

[0047] Embodiments of the invention are described herein with reference to cross-sectional views that are schematic illustrations of ideal embodiments (and intermediate structures) of the invention. As such, variations from the shapes as shown, for example due to manufacturing techniques and / or tolerances, are to be expected. Accordingly, embodiments of the invention should not be limited to the particular shapes of regions shown herein but include shape deviations due to, for example, manufacturing. For example, an implanted region shown as rectangular will typically have rounded or curved features at its edges and / or an implantation concentration gradient rather than a binary change from the implanted region to the non-implanted region. Similarly, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation takes place. Thus, the regions shown in the figures are substantially schematic in nature, and their shapes are not intended to show the actual shape of the regions of the device and are not intended to limit the scope of the present invention.

[0048] Through research, it is found that in the manufacturing process of traditional semiconductor devices, after the wafer is thinned, it is necessary to remove the protective film layer on the front side of the wafer and perform residue glue removal treatment on the front sides of all batches of wafers. Due to the residue glue removal treatment, the risk of wafer fragmentation is relatively high, and thus the fragmentation rate of the wafer is relatively high.

[0049] Based on this, the present application designs a manufacturing method for semiconductor devices, aiming to solve the problem of high risk of wafer breakage after thinning in the traditional manufacturing process of semiconductor devices.

[0050] Figure 1 The flowchart of the manufacturing method for semiconductor devices according to an embodiment of the present application is shown.

[0051] Please refer to Figure 1 , for the manufacturing method of semiconductor devices provided by an embodiment of the present application, the semiconductor device includes a wafer 10, the wafer 10 has a front surface 11 and a back surface disposed opposite to each other, and the wafer 10 includes a plurality of die 12 disposed on the front surface 11.

[0052] The front surface 11 of the wafer 10 refers to one side surface of the wafer 10 for forming a plurality of die 12.

[0053] The back surface of the wafer 10 refers to one side surface of the wafer 10 disposed opposite to the front surface 11.

[0054] The die 12 can be a chip formed on the front surface 11 of the wafer by using a lithography process. According to the design process of the die 12, the sizes of the die 12 of different batches of wafers 10 are different.

[0055] The manufacturing method of the semiconductor device includes the following steps:

[0056] S110, form a protective film layer (not shown in the figure) covering a plurality of die 12 on the front surface 11 of the wafer 10.

[0057] The protective film layer refers to a film layer that can be used to protect the front surface 11 of the wafer 10 and a plurality of die 12 disposed on the front surface 11 during the thinning process of the back surface of the wafer 10.

[0058] The protective film layer has certain acid corrosion resistance and includes an adhesive layer adhered to the front surface 11 of the wafer 10.

[0059] S120, perform a thinning process on the back surface of the wafer 10.

[0060] S130, remove the protective film layer.

[0061] Since the protective film layer includes an adhesive layer adhered to the front surface 11 of the wafer 10, therefore, after removing the protective film layer, residues 20 of the protective film layer may remain on the die 12.

[0062] Through research, it is found that in wafers 10 with the same structure, the larger the size of the die 12, the smaller the number of die 12 on the wafer 10, and the more the number of residues 20 on the die 12. Figure 2 Figures (a) and (b) ofFigure 2 and Figure 3 it can be seen from Figure 2 in the (a) figure of that the size of the die 12 is larger, the number of dies 12 on the wafer 10 is smaller, and the number of residues 20 on the die 12 is larger; while Figure 2 in the (b) figure of the size of the die 12 is smaller, the number of dies 12 on the wafer 10 is larger, but the number of residues 20 on the die 12 is smaller. Therefore, the larger the size of the die 12, the smaller the number of dies 12 on the wafer 10, and the more the number of residues 20 on the die 12.

[0063] Optionally, the manufacturing method of the semiconductor device may further include: S140, determining whether the preset size of the die 12 is greater than a preset value, so as to perform the following step S150.

[0064] Optionally, the manufacturing method of the semiconductor device may further include: obtaining the preset size of the die 12. In this way, the size relationship between the preset size of the die 12 and the preset value can be compared. Specifically, a captured image of the front surface 11 of the wafer 10 can be obtained by a camera, and then the preset size of the die 12 can be obtained according to the captured image. Of course, the present application is not limited thereto, and other methods may also be used to obtain the preset size of the die 12.

[0065] S150, if the preset size of the die 12 is greater than the preset value, then clean the front surface 11 of the wafer 10 to remove the residue of the first protective film layer remaining on the die 12. If the preset size of the die 12 is less than or equal to the preset value, then do not clean the front surface 11 of the wafer 10, that is, do not perform the step of cleaning the front surface 11 of the wafer 10 to remove the residue of the first protective film layer remaining on the die 12.

[0066] The residue of the first protective film layer refers to the residue 20 of the protective film layer. In order to distinguish it from the residue of the second protective film layer described below, it is named the residue of the first protective film layer here.

[0067] Wherein, the preset size of the die 12 refers to the size of the die 12 in the direction parallel to the front surface 11.

[0068] Thus, after removing the protective film layer, if the preset size of the die 12 is greater than the preset value, it indicates that there is a high probability that the residue 20 of the protective film layer remains on the die 12, and it is necessary to clean the front side 11 of the wafer 10 to remove the residue of the first protective film layer remaining on the die 12; if the preset size of the die 12 is less than or equal to the preset value, it indicates that the possibility of the residue 20 of the protective film layer remaining on the die 12 is small, and the step of cleaning the front side 11 of the wafer 10 to remove the residue of the first protective film layer remaining on the die 12 may not be performed. Thus, when the preset size of the die 12 is less than or equal to the preset value, the step of cleaning the front side 11 of the wafer 10 can be omitted, thereby reducing the probability of the thinned wafer 10 being fragmented during the cleaning process. Moreover, according to a large number of studies, if the preset size of the die 12 is less than or equal to the preset value, the probability of the residue 20 of the protective film layer remaining on the die 12 can be reduced. Therefore, using the manufacturing method of the semiconductor device of the present application is beneficial to reducing the fragmentation risk of the wafer 10 while also improving the yield of the semiconductor device.

[0069] In some embodiments, the preset size of the die 12 includes the size of the die 12 along the first direction F1 and the size of the die along the second direction F2. Among them, the first direction F1 and the second direction F2 are perpendicular to each other and both are parallel to the front side 11.

[0070] The size of the die 12 along the first direction F1 is the length of the die 12, the length of the die 12 is X, the size of the die 12 along the second direction F2 is the width of the die 12, and the width of the die 12 is Y. Figure 2 Taking the cross-section of the die 12 being rectangular as an example for illustration, the present application is not limited thereto. If the cross-section 12 of the die 12 is circular, the preset size of the die 12 includes the diameter of the die 12. By analogy, the preset size of the die 12 can be determined according to the shape of the cross-section 12 of the die 12. In most cases, the preset size of the die 12 is the radial size of the die 12.

[0071] It can be that determining whether the preset size of the die 12 is greater than the preset value includes: determining whether the size of the die 12 along the first direction F1 is greater than the preset value.

[0072] It can also be that determining whether the preset size of the die 12 is greater than the preset value includes: determining whether the size of the die 12 along the second direction F2 is greater than the preset value.

[0073] Of course, it can also be that determining whether the preset size of the die 12 is greater than the preset value includes: determining whether the size of the die 12 along the first direction F1 is greater than the preset value and determining whether the size of the die 12 along the second direction F2 is greater than the preset value.

[0074] In this way, it is possible to better determine whether to clean the front surface 11 of the wafer 10 based on the size of the die 12 along the first direction F1 and the preset value, and / or the size of the die 12 along the second direction F2 and the preset value.

[0075] In some embodiments, the preset value is 3400μm - 3600μm.

[0076] The preset value can be 3400μm, 3500μm or 3600μm.

[0077] Through a large amount of research, the present application further determines the relationship between the size of the die 12 and the quantity of the residue 20. If the preset value is within the range of 3400μm - 3600μm, and the preset size of the die 12 is less than or equal to the preset value, the probability that there is a residue 20 of the protective film layer on the die 12 is small and can be almost ignored. Utilizing this research result and the manufacturing method of the semiconductor device of the present application, while reducing the risk of wafer 10 fragmentation, the yield of the semiconductor device can be better improved.

[0078] Figure 4 and Figure 5 shows a relationship diagram of the size of the die 12, abnormal dies and normal dies before and after using the manufacturing method of the semiconductor device of the present application when the preset value is 3500μm. Among them, an abnormal die refers to a die 12 with the quantity of the residue 20 on the die 12 greater than the threshold, and a normal die refers to a die 12 with the quantity of the residue 20 on the die 12 less than or equal to the threshold. The above-mentioned threshold is set by those skilled in the art according to actual production needs. For example, when the quantity of the residue 20 on the die 12 is less than or equal to the threshold, the die 12 can work normally.

[0079] From Figure 4 and Figure 5It can be seen that when the preset size of the die 12 is less than or equal to the preset value (3500 μm), the probability of residue 20 remaining on the die 12 is significantly less than when the preset size of the die 12 is greater than the preset value (3500 μm). After using the manufacturing method of the semiconductor device of the present application, when the preset size of the die 12 is less than or equal to the preset value (3500 μm), the step of cleaning the front side 11 of the wafer 10 to remove the residue of the first protective film layer remaining on the die 12 is not performed, and when the preset size of the die 12 is greater than the preset value (3500 μm), the step of cleaning the front side 11 of the wafer 10 to remove the residue of the first protective film layer remaining on the die 12 is performed. In this way, the probability of the thinned wafer 10 being fragmented during the cleaning process can be reduced, and the probability of the residue 20 of the protective film layer remaining on the die 12 can be reduced. To a certain extent, the manufacturing method of the semiconductor device of the present application optimizes the attachment relationship between the size of the die 12 and the quantity of the residue 20, which is beneficial to improving the yield rate of the manufacturing method of the semiconductor device.

[0080] In some embodiments, the step S150 of cleaning the front side 11 of the wafer 10 to remove the residue of the first protective film layer remaining on the die 12 specifically includes:

[0081] S151. Cleaning the front side 11 of the wafer 10 with a degumming solution for a first preset duration, where the degumming solution is used to remove the residue of the first protective film layer, and the first preset duration is t1, 100 seconds ≤ t1 ≤ 500 seconds.

[0082] If the cleaning duration is too short, the removal effect of the residue of the first protective film layer will be affected; if the cleaning duration is too long, the structure of the die 12 may be affected. Therefore, it is necessary to clean the front side 11 of the wafer 10 with a degumming solution for an appropriate duration, such as setting the first preset duration to 100 seconds ≤ t1 ≤ 500 seconds. In this way, the residue of the first protective film layer can be well removed without affecting the structure of the die 12.

[0083] In some embodiments, the degumming solution includes ethylene glycol and an etchant, and the mass ratio of ethylene glycol to the etchant is greater than 4.

[0084] The ethylene glycol can be an ethylene glycol solution with a concentration greater than 99%.

[0085] The etchant can be a buffered oxide etch (BOE), and of course, other substances that can chemically react with the glue layer can also be used.

[0086] Since the mass proportion of the etchant is relatively small, the etching of the die 12 by the stripping solution can be reduced, and while reducing the influence of the stripping solution on the structure of the die 12, the residue of the first protective film layer can be well removed.

[0087] In some embodiments, the mass ratio of ethylene glycol to the etchant is greater than 10.

[0088] Optionally, the mass ratio of ethylene glycol to the etchant is greater than 10 and less than 20. For example, the mass ratio of ethylene glycol to the etchant is 11, 12, 13, 14, 15, 16, 17, 18, or 19.

[0089] In this way, while further reducing the influence of the stripping solution on the structure of the die 12, the residue of the first protective film layer can be well removed.

[0090] In some embodiments, after the step S151 of cleaning the front surface 11 of the wafer 10 with the stripping solution for a first preset duration, the step S160 of cleaning the front surface 11 of the wafer 10 to remove the residue of the first protective film layer remaining on the die 12 further includes:

[0091] S152. Cleaning the front surface 11 of the wafer 10 with deionized water for a second preset duration, where the second preset duration is t2 and 600 seconds ≤ t2 ≤ 1200 seconds.

[0092] If the cleaning duration of the front surface 11 of the wafer 10 with deionized water is too short, excessive residue of the stripping solution will be caused; if the cleaning duration of the front surface 11 of the wafer 10 with deionized water is too long, the manufacturing efficiency of the manufacturing method of the semiconductor device will be affected. Therefore, the second preset duration needs to be set within an appropriate range, such as 600 seconds ≤ t2 ≤ 1200 seconds, which can not only well remove the stripping solution and thus clean the front surface 11 of the wafer 10, but also reduce the influence on the manufacturing efficiency of the manufacturing method of the semiconductor device.

[0093] Please refer to again Figure 1 , the manufacturing method of the semiconductor device further includes:

[0094] S160. Performing a defect scan on the front surface 11 of the wafer 10.

[0095] Optionally, performing a defect scan on the front surface 11 of the wafer 10 specifically includes: before forming a protective film layer covering a plurality of dies 12 on the front surface 11 of the wafer 10, obtaining a first picture of the front surface 11 of the wafer 10; after removing the protective film layer, obtaining a second picture of the front surface 11 of the wafer 10.

[0096] S170. Determining whether there is a residue of the second protective film layer on the die 12. Optionally, it can be determined whether there is a residue of the second protective film layer on the die 12 by comparing the first picture and the second picture.

[0097] The second protective film layer residue refers to the residue 20 on the protective film layer that is different from the first protective film layer residue. In order to distinguish it from the above-mentioned first protective film layer residue, it is named the second protective film layer residue here. The second protective film layer residue can be the residue 20 of the protective film layer existing on the die 12 with a preset size less than or equal to a preset value.

[0098] For the convenience of description, if the preset size of the die 12 is greater than the preset value, the die 12 is defined as a large-sized die 12; if the preset size of the die 12 is less than or equal to the preset value, the die 12 is defined as a small-sized die 12.

[0099] S180. If there is a second protective film layer residue on the die 12, clean the front surface 11 of the wafer 10 to remove the second protective film layer residue.

[0100] Among them, the step of cleaning the front surface 11 of the wafer 10 to remove the second protective film layer residue can refer to the step of cleaning the front surface 11 of the wafer 10 to remove the first protective film layer residue above. Here, it will not be elaborated anymore.

[0101] The probability of the residue 20 remaining on the small-sized die 12 is relatively small. By performing steps such as defect scanning on the front surface 11 of the wafer 10, the probability of the residue 20 remaining on the die 12 can be further reduced, and the yield of semiconductor devices can be improved.

[0102] In some other embodiments, please refer to Figure 6 and Figure 7 , the manufacturing method of the semiconductor device includes:

[0103] S210. Form a protective film layer (not shown in the figure) covering multiple dies 12 on the front surface 11 of the wafer 10.

[0104] S220. Thinning the back surface of the wafer 10.

[0105] S230. Remove the protective film layer.

[0106] S210 - S230 can refer to the above-mentioned steps S110 - S130, and will not be elaborated here.

[0107] S241. Send a first instruction to the size comparison system. The first instruction includes the process progress of the production system and the product information of the semiconductor device. Among them, the process progress of the production system includes the completion progress of removing the protective film layer, and the product information of the semiconductor device refers to the specification information of the die 12, etc. The specification information of the die 12 can include the model of the die 12.

[0108] S242. Receive a second instruction determined by the size comparison system based on the first instruction, where the second instruction is used to indicate whether to clean the front side 11 of the wafer 10.

[0109] The production system is used to execute the above steps S210 - S230. After the production system completes step S230 (removing the protective film layer), it sends a first instruction to the size comparison system. After receiving the first instruction, the size comparison system compares the preset size of the die 12 with a preset value according to the first instruction and outputs a second instruction. Specifically, the size comparison system can search according to the product information of the semiconductor device in the first instruction, determine the preset size of the die 12, and then compare the size relationship between the preset size of the die 12 and the preset value, and issue a second instruction on whether to clean the front side 11 of the wafer 10, so that the production system can execute the following step S250 according to the second instruction.

[0110] Among them, the production system is the system used in the production process of semiconductor devices, and the size comparison system is the system for comparing the size of the die 12.

[0111] In a possible implementation, the size comparison system and the production system can be integrated into one system; or, the size comparison system and the production system can be different systems, and the size comparison system can be a big data system or a server.

[0112] Optionally, the production system may include multiple machines, and the process flows implemented by different machines may be different. For example, the above steps S210 - S230 can be executed by different machines for the corresponding process flows, which are not limited in the embodiments of the present application. Of course, in a possible implementation, the production system may only include one machine, and the above steps S210 - S230 can be executed by this machine, and this machine can implement the different process flows corresponding to the above steps S210 - S230.

[0113] S250. If the preset size of the die 12 is greater than the preset value, clean the front side 11 of the wafer 10 to remove the residue of the first protective film layer on the die 12. If the preset size of the die 12 is less than or equal to the preset value, do not clean the front side 11 of the wafer 10.

[0114] S260. Perform a defect scan on the front side 11 of the wafer 10.

[0115] S270. Determine whether there is a residue of the second protective film layer on the die 12.

[0116] S280. If there is a residue of the second protective film layer on the die 12, clean the front side 11 of the wafer 10 to remove the residue of the second protective film layer.

[0117] S260 - S280 can refer to the above - mentioned steps S160 - S180 and will not be elaborated here.

[0118] Figure 8 The graph shows the trend of the fragmentation rate of the wafer 10 before and after using the manufacturing method of the semiconductor device of the present application. Figure 8 The left - hand area of... shows the trend graph of the fragmentation rate of the wafer 10 before using the manufacturing method of the semiconductor device of the present application. Figure 8 The right - hand area of... shows the trend graph of the fragmentation rate of the wafer 10 after using the manufacturing method of the semiconductor device of the present application. It can be seen from... Figure 8 When the preset value is set to 3500μm and the proportion of the large - sized die 12 is 30 - 70%, after using the manufacturing method of the semiconductor device of the present application, the fragmentation rate of the wafer 10 drops from 6% to 2% or even less.

[0119] Therefore, by using the manufacturing method of the semiconductor device of the present application, the risk of wafer 10 fragmentation can be well reduced, and at the same time, the yield of the semiconductor device can be improved.

[0120] An embodiment of the present application provides a semiconductor device manufactured by using the manufacturing method of the semiconductor device in any of the above - mentioned embodiments.

[0121] The technical features of the above - mentioned embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above - mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.

[0122] The above - mentioned embodiments only represent several implementation manners of the present application. Their descriptions are relatively specific and detailed, but they should not be construed as limitations on the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. A method for manufacturing a semiconductor device, characterized in that, The semiconductor device includes a wafer having a front side and a back side disposed opposite to each other. The wafer includes a plurality of die disposed on the front side. The manufacturing method of the semiconductor device includes: Forming a protective film layer covering the plurality of die on the front side of the wafer; Thinning the back side of the wafer; Removing the protective film layer; If a preset dimension of the die is greater than a preset value, cleaning the front side of the wafer to remove residual first protective film layer residues on the die; if the preset dimension of the die is less than or equal to the preset value, not cleaning the front side of the wafer; wherein, the preset dimension of the die refers to the dimension of the die in a direction parallel to the front side.

2. The manufacturing method of the semiconductor device according to claim 1, characterized in that, If the preset dimension of the die is greater than the preset value, cleaning the front side of the wafer to remove residual first protective film layer residues on the die; Before not cleaning the front side of the wafer if the preset dimension of the die is less than or equal to the preset value, the manufacturing method of the semiconductor device further includes: Determining whether the preset dimension of the die is greater than the preset value.

3. The manufacturing method of the semiconductor device according to claim 2, characterized in that, The preset dimension of the die includes the dimension of the die along a first direction and the dimension of the die along a second direction, wherein the first direction and the second direction are perpendicular to each other and both are parallel to the front side; The determining whether the preset dimension of the die is greater than the preset value includes: Determining whether the dimension of the die along the first direction is greater than the preset value, and / or determining whether the dimension of the die along the second direction is greater than the preset value.

4. The manufacturing method of the semiconductor device according to any one of claims 1-3, characterized in that, The preset value is 3400μm - 3600μm.

5. The manufacturing method of the semiconductor device according to any one of claims 1 to 3, characterized in that, The cleaning the front side of the wafer to remove residual first protective film layer residues on the die includes: cleaning the front side of the wafer with a degumming solution for a first preset duration; wherein, the degumming solution is used to remove the first protective film layer residues; The first preset duration is t1, and 100 seconds ≤ t1 ≤ 500 seconds.

6. The manufacturing method of the semiconductor device according to claim 5, characterized in that, The degumming solution includes ethylene glycol and an etchant; The mass ratio of the ethylene glycol to the etchant is greater than 4.

7. The manufacturing method of the semiconductor device according to claim 5, characterized in that After cleaning the front side of the wafer with the degumming solution for the first preset duration, the cleaning the front side of the wafer to remove residual first protective film layer residues on the die further includes: Cleaning the front side of the wafer with deionized water for a second preset duration; wherein, the second preset duration is t2, and 600 seconds ≤ t2 ≤ 1200 seconds.

8. The manufacturing method of the semiconductor device according to any one of claims 1-3, characterized in that, The manufacturing method of the semiconductor device further includes: Sending a first instruction to a dimension comparison system, the first instruction including product information of the semiconductor device; Receiving a second instruction determined by the dimension comparison system based on the first instruction, the second instruction being used to indicate whether to clean the front side of the wafer.

9. The manufacturing method of the semiconductor device according to any one of claims 1-3, characterized in that, The manufacturing method of the semiconductor device further includes: Performing a defect scan on the front side of the wafer, and if there are second protective film layer residues on the die, cleaning the front side of the wafer to remove the second protective film layer residues.

10. A semiconductor device, characterized in that, Manufactured by using the manufacturing method of the semiconductor device according to any one of claims 1 - 9.

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