Millimeter wave radio frequency power amplifier and millimeter wave radio frequency transceiver

Abstract

The invention provides a millimeter wave radio frequency power amplifier and a millimeter wave radio frequency transceiver, in the amplifier, an input differential signal is connected to grid electrodes of an amplification tube pair transistor and an auxiliary tube pair transistor through an auxiliary tube pair transistor blocking capacitor and an amplification tube pair transistor blocking capacitor; source electrodes of the auxiliary tube pair tube and the amplifier tube pair tube are grounded. The first amplifier tube is connected with the drain electrode of the first common-gate tube and the source electrode of the first auxiliary tube; the second amplifier tube is connected with the drain electrode of the second common-gate tube and the source electrode of the second auxiliary tube; grid electrodes of the common-gate pair transistors are connected; common-gate tube grid bias voltage is connected to grids of the common-gate tube geminate transistors through the bias resistor, and the other end of the grounding capacitor is connected to the grids of the common-gate tube geminate transistors; the drain electrode of the common-gate pair transistor is connected to the shunt capacitor and the main coil inductor of the output balun, and the secondary coil inductor of the output balun is connected with a single-ended output signal. According to the radio frequency power amplifier, OP1dB of the radio frequency power amplifier can be improved under the condition that the working voltage of the power amplifier is not increased.

Description

Technical Field

[0001] This application relates to the field of integrated circuit technologies, and in particular, to a millimeter-wave radio frequency power amplifier and a millimeter-wave radio frequency transceiver. Background Art

[0002] With the rapid development of the fifth-generation wireless communication technology, millimeter-wave band communication applications are becoming more and more widespread. As an important module in a millimeter-wave transceiver, the requirements for the working performance of a millimeter-wave radio frequency power amplifier are also getting higher and higher. Linearity, as the core index of a millimeter-wave power amplifier, is an important research direction in millimeter-wave communication on how to improve the linearity of a millimeter-wave radio frequency power amplifier under the conditions of low voltage and low power consumption.

[0003] Since the power amplifier operates in the millimeter-wave band, the channel length of its CMOS transistor is relatively narrow, and the normal operating voltage domain is relatively low. The voltage domain in which the CMOS transistor operates directly determines the maximum swing voltage between the source and drain of the transistor, thereby determining the maximum output power and OP1dB that the CMOS transistor can provide. OP1dB, as the core index of the power amplifier, is used to measure the nonlinear characteristics of the amplifier, and it determines the performance of the power amplifier. Therefore, designing a CMOS millimeter-wave power amplifier with a high OP1dB in a low voltage domain has always been an important research direction.

[0004] In a general structure of a cascode differential amplifier, the impedance matching problem between the drain of the amplifying transistor and the source of the cascode transistor will reduce the linearity of the amplifier, thereby affecting the OP1dB index of the amplifier. Therefore, improving the OP1dB of the cascode amplifier under a low supply voltage has become a design difficulty. Summary of the Invention

[0005] The purpose of this application is to provide a millimeter-wave radio frequency power amplifier and a millimeter-wave radio frequency transceiver, which can improve the OP1dB of the radio frequency power amplifier without increasing the working voltage of the power amplifier.

[0006] In a first aspect, the present application provides a millimeter-wave radio frequency power amplifier, which includes: a pair of amplifying tubes, a pair of cascode tubes, a DC-blocking capacitor for the pair of amplifying tubes, a bias resistor, a grounding capacitor, a shunt capacitor, an output balun, and a pair of auxiliary tubes, a DC-blocking capacitor for the pair of auxiliary tubes; an input differential signal is connected to the gates of the pair of amplifying tubes and the pair of auxiliary tubes through the DC-blocking capacitor for the pair of auxiliary tubes and the DC-blocking capacitor for the pair of amplifying tubes; the sources of the pair of auxiliary tubes and the pair of amplifying tubes are both grounded; the drains of the first amplifying tube, the drain of the first cascode tube, and the source of the first auxiliary tube are all connected; the drains of the second amplifying tube, the drain of the second cascode tube, and the source of the second auxiliary tube are all connected; the gates of the pair of cascode tubes are connected; the gate bias voltage of the cascode tube is connected to the gates of the pair of cascode tubes through the bias resistor, and the other end of the grounding capacitor is connected to the gates of the pair of cascode tubes; the drains of the pair of cascode tubes are connected to the shunt capacitor and the primary coil inductance of the output balun, one end of the secondary coil inductance of the output balun is grounded, and the other end is connected to the single-ended output signal.

[0007] Further, the above-mentioned DC-blocking capacitor for the pair of auxiliary tubes includes: a capacitor array structure with adjustable capacitance.

[0008] Further, the capacitance value of the above-mentioned DC-blocking capacitor for the pair of auxiliary tubes is 3 to 7 times the capacitance value of the DC-blocking capacitor for the pair of amplifying tubes.

[0009] Further, the gate bias voltage of the above-mentioned pair of auxiliary tubes is 100 - 200 millivolts lower than the gate bias voltage of the pair of amplifying tubes.

[0010] Further, the above-mentioned pair of auxiliary tubes is implemented by multiple sub-tubes, and the switching of the multiple sub-tubes is controlled by a digital enable signal.

[0011] Further, the requirement for setting the gate bias voltage of the above-mentioned pair of auxiliary tubes is to make the pair of auxiliary tubes operate in deep class AB.

[0012] In a second aspect, the present application further provides a millimeter-wave radio frequency transceiver, which includes the millimeter-wave radio frequency power amplifier as described in the first aspect.

[0013] In a third aspect, the present application further provides a millimeter-wave beam former, which includes the millimeter-wave radio frequency power amplifier as described in the first aspect.

[0014] In a fourth aspect, the present application further provides a 5G millimeter-wave base station, which includes the millimeter-wave radio frequency transceiver as described in the second aspect and the millimeter-wave beam former as described in the third aspect.

[0015] In a fifth aspect, the present application further provides a satellite interconnection system, which includes the millimeter-wave radio frequency transceiver described in the second aspect and the millimeter-wave beam former described in the third aspect.

[0016] In the millimeter-wave radio frequency power amplifier and the millimeter-wave radio frequency transceiver provided by the present application, the millimeter-wave radio frequency power amplifier includes: a pair of amplifier tubes, a pair of cascode tubes, a direct-current blocking capacitor for the pair of amplifier tubes, a bias resistor, a grounding capacitor, a parallel capacitor, an output balun, and a pair of auxiliary tubes and a direct-current blocking capacitor for the pair of auxiliary tubes; an input differential signal is connected to the gates of the pair of amplifier tubes and the pair of auxiliary tubes through the direct-current blocking capacitor for the pair of auxiliary tubes and the direct-current blocking capacitor for the pair of amplifier tubes; the sources of the pair of auxiliary tubes and the pair of amplifier tubes are both grounded; the drains of the first amplifier tube, the drain of the first cascode tube, and the source of the first auxiliary tube are all connected; the drains of the second amplifier tube, the drain of the second cascode tube, and the source of the second auxiliary tube are all connected; the gates of the pair of cascode tubes are connected; the gate bias voltage of the cascode tube is connected to the gates of the pair of cascode tubes through the bias resistor, and the other end of the grounding capacitor is connected to the gates of the pair of cascode tubes; the drains of the pair of cascode tubes are connected to the parallel capacitor and the main coil inductance of the output balun, one end of the secondary coil inductance of the output balun is grounded, and the other end is connected to a single-ended output signal. The present application can improve the OP1dB of the radio frequency power amplifier without increasing the operating voltage of the power amplifier. Description of the Drawings

[0017] In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings required for use in the description of the specific embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0018] Figure 1 It is a schematic structural diagram of a cascode differential amplifier in the prior art;

[0019] Figure 2 It is a schematic structural diagram of a millimeter-wave radio frequency power amplifier provided by an embodiment of the present application;

[0020] Figure 3 It is a schematic structural diagram of another millimeter-wave radio frequency power amplifier provided by an embodiment of the present application;

[0021] Figure 4 It is a simulation result diagram corresponding to a cascode differential amplifier provided by an embodiment of the present application;

[0022] Figure 5This is a simulation result diagram corresponding to a millimeter-wave radio frequency power amplifier provided by an embodiment of the present application. Detailed implementation manners

[0023] The technical solutions of the present application will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are some, but not all, of the embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present application without creative efforts shall fall within the protection scope of the present application.

[0024] The circuit structure of the existing cascode differential amplifier is as Figure 1 shown. The CMOS transistors include amplification transistor pairs M1, M2 and cascode transistors (common-gate transistors) M3, M4. The differential input signals VIP / VIN are amplified by the cascode differential amplifier through the DC-blocking capacitors C1, C2, and the amplified differential signals are converted into a single-ended output signal VOUT through the output balun. Since the normal operating voltage between the source and drain of the M1 and M2 transistors is relatively low, the cascode transistors M3 and M4 are added to bear part of the power supply voltage. However, the impedance matching problem between the drain of the amplification transistor and the source of the cascode transistor will reduce the linearity of the amplifier, thereby affecting the OP1dB index of the amplifier. Therefore, improving the OP1dB of the cascode amplifier under low power supply voltage has become a design difficulty.

[0025] Based on this, the embodiments of the present application provide a millimeter-wave radio frequency power amplifier and a millimeter-wave radio frequency transceiver, which can improve the OP1dB of the radio frequency power amplifier without increasing the operating voltage of the power amplifier.

[0026] For the convenience of understanding this embodiment, a millimeter-wave radio frequency power amplifier disclosed in the embodiments of the present application will be introduced in detail first.

[0027] An embodiment of the present application provides a millimeter-wave radio frequency power amplifier, which includes: a pair of amplifier tubes, a pair of cascode tubes, a direct-current blocking capacitor for the pair of amplifier tubes, a bias resistor, a grounding capacitor, a parallel capacitor, an output balun, and a pair of auxiliary tubes, a direct-current blocking capacitor for the pair of auxiliary tubes; an input differential signal is connected to the gates of the pair of amplifier tubes and the pair of auxiliary tubes through the direct-current blocking capacitor for the pair of auxiliary tubes and the direct-current blocking capacitor for the pair of amplifier tubes; the sources of the pair of auxiliary tubes and the pair of amplifier tubes are both grounded; the drains of the first amplifier tube, the first cascode tube, and the source of the first auxiliary tube are all connected; the drains of the second amplifier tube, the second cascode tube, and the source of the second auxiliary tube are all connected; the gates of the pair of cascode tubes are connected; the cascode tube gate bias voltage is connected to the gates of the pair of cascode tubes through the bias resistor, and the other end of the grounding capacitor is connected to the gates of the pair of cascode tubes; the drains of the pair of cascode tubes are connected to the parallel capacitor and the primary coil inductance of the output balun, one end of the secondary coil inductance of the output balun is grounded, and the other end is connected to a single-ended output signal.

[0028] See Figure 2 As shown in the structural schematic diagram of a millimeter-wave radio frequency power amplifier, the millimeter-wave radio frequency power amplifier includes: a pair of amplifier tubes M1, M2, a pair of auxiliary tubes M3, M4, a pair of cascode tubes M5, M6, direct-current blocking capacitors C1, C2 for the pair of amplifier tubes, direct-current blocking capacitors C3, C4 for the pair of auxiliary tubes, a cascode tube gate bias resistor R1, a capacitor C5 from the cascode tube gate to ground (i.e., the aforementioned grounding capacitor), a cascode tube output parallel capacitor C6, and output baluns L1, L2.

[0029] The input differential signal VIP / VIN is connected to the gates of the transistors M1, M2, M3, M4 through the direct-current blocking capacitors C1, C2, C3, C4. The sources of the transistors M1, M2, M3, M4 are connected together and grounded. The drains of the transistors M1 and M3 are connected and connected to the source of the transistor M5. The drains of the transistors M2 and M4 are connected and connected to the source of the transistor M6. The gates of the transistors M5 and M6 are connected. The cascode tube gate bias voltage Vb_cas is connected to the gates of the transistors M5 and M6 through the bias resistor R1. One end of the capacitor C5 is grounded, and the other end is connected to the gates of the transistors M5 and M6. The drains of the transistors M5 and M6 are connected to the cascode tube output parallel capacitor C6 and the primary coil inductance L1 of the output balun. One end of the secondary coil inductance of the output balun is grounded, and the other end is connected to the single-ended output signal VOUT.

[0030] In this embodiment, compared with the structure of a conventional cascode amplifier, auxiliary transistor pair M3 and M4 and their corresponding DC-blocking capacitors C3 and C4 are added. The sizes of the DC-blocking capacitors C3 and C4 of the auxiliary transistor pair M3 and M4 cannot be the same as those of the DC-blocking capacitors C1 and C2 of the amplifying transistor pair M1 and M2. The values of the DC-blocking capacitors C3 and C4 of the auxiliary transistor pair M3 and M4 should be much larger than those of the DC-blocking capacitors C1 and C2 of the amplifying transistor pair M1 and M2. For example, the capacitance value of the DC-blocking capacitor of the auxiliary transistor pair is 3 to 7 times that of the DC-blocking capacitor of the amplifying transistor pair; the gate bias voltage of the auxiliary transistor pair M3 and M4 should be lower than that of the amplifying transistor pair M1 and M2. For example, the gate bias voltage of the auxiliary transistor pair is 100 - 200 mV lower than that of the amplifying transistor pair. In this way, under the action of the auxiliary transistor pair M3 and M4 and their corresponding DC-blocking capacitors C3 and C4, the power amplifier in this embodiment can provide a higher OP1dB than the conventional cascode amplifier structure.

[0031] In a preferred implementation manner, the above-mentioned DC-blocking capacitors of the auxiliary transistor pair may include: a capacitor array structure with adjustable capacitance. That is, the DC-blocking capacitors C3 and C4 of the above-mentioned auxiliary transistor pair M3 and M4 can be designed as a capacitor array structure with adjustable capacitance, as Figure 3 shown, by adjusting the sizes of the DC-blocking capacitors C3 and C4 to dynamically adjust the OP1dB of the power amplifier.

[0032] In a preferred implementation manner, the above-mentioned auxiliary transistor pair is implemented by multiple sub-transistors, and the switching of the multiple sub-transistors is controlled by a digital enable signal to achieve flexible control.

[0033] The formula for the output power of the power amplifier is as follows:

[0034] P = V 2 / R = I 2 R;

[0035] When the power amplifier operates at a lower power supply voltage, the output voltage swing of the power amplifier is limited by the low power supply voltage, and its maximum output voltage swing is small and cannot be increased, resulting in a low output power of the power amplifier. According to the above output power formula, to increase the output power of the power amplifier, the maximum output current of the power amplifier can be increased.

[0036] Specific measures are as Figure 2As shown, the requirement for setting the gate bias voltage of the auxiliary transistor pair is to make the auxiliary transistor pair operate in deep AB class. Specifically, since the bias voltage of the auxiliary transistor pair M3 and M4 is set relatively low, it operates in deep AB class (the AB class power amplifier circuit is a combination of class A and class B. During the operation of the transistor, there are both conduction states and cutoff states. The advantage of this circuit is less distortion and higher efficiency). When the differential input signal gradually increases, the operating region of the amplifier transistor pair M1 and M2 changes from the linear region to the saturation region, and the drain output current no longer increases. At this time, the operating region of the auxiliary transistor pair M3 and M4 changes from deep AB class to shallow AB class, and their drain output current continuously increases. The differential input signals VIN / VIP reach the amplifier transistor pair M1 and M2 through the DC blocking capacitors C1 and C2, and reach the auxiliary transistor pair M3 and M4 through the DC blocking capacitors C3 and C4. The values of C3 and C4 are much larger than those of C1 and C2. Due to the voltage division effect of the equivalent resistance of the DC blocking capacitor, the signal amplitude reaching the gate of the amplifier transistor is smaller than that reaching the gate of the auxiliary transistor. As a result, the time for the amplifier transistor pair M1 and M2 to enter the saturation region becomes longer, and during this period, the drain output current of the auxiliary transistor pair M3 and M4 will also become larger.

[0037] Since the drain of amplifier transistor M1 is connected to the drain of auxiliary transistor M3, and the drain of amplifier transistor M2 is connected to the drain of auxiliary transistor M4, the total maximum output current of the amplifier will also increase, and the output power of the amplifier will also increase, thereby improving the OP1dB of the power amplifier at low supply voltages. If the DC blocking capacitors C3 and C4 are designed as a capacitor array structure with tunable capacitance size, such as Figure 3 shown, the drain output current of the auxiliary transistor pair M3 and M4 can also be tuned accordingly, thereby tuning the OP1dB of the power amplifier.

[0038] Assume a low supply voltage of 1.2V, Figure 1 the simulated OP1dB value of the common-source common-gate differential amplifier with a common structure at the 29.5GHz frequency point in the millimeter-wave band is 13.4dBm, as shown in Figure 4 shown. Using the technology in this embodiment, Figure 2 the simulated OP1dB value of the power amplifier with the circuit structure in Figure 5 at the 29.5GHz frequency point in the millimeter-wave band is 15.7dBm, as shown in Figure 2 shown. It can be seen by comparison that

[0039] Based on the above millimeter-wave radio frequency power amplifier embodiment, the embodiment of the present application also provides a millimeter-wave radio frequency transceiver, which includes the millimeter-wave radio frequency power amplifier as described above.

[0040] The millimeter-wave radio frequency transceiver provided by the embodiments of the present application has the same implementation principle and technical effects as those of the foregoing amplifier embodiments. For the sake of brief description, for the parts not mentioned in the embodiments of the millimeter-wave radio frequency transceiver, reference may be made to the corresponding content in the foregoing amplifier embodiments.

[0041] Based on the foregoing embodiments of the millimeter-wave radio frequency power amplifier, the embodiments of the present application further provide a millimeter-wave beam former, which includes the foregoing millimeter-wave radio frequency power amplifier.

[0042] The millimeter-wave beam former provided by the embodiments of the present application has the same implementation principle and technical effects as those of the foregoing amplifier embodiments. For the sake of brief description, for the parts not mentioned in the embodiments of the millimeter-wave beam former, reference may be made to the corresponding content in the foregoing amplifier embodiments.

[0043] Based on the foregoing embodiments of the millimeter-wave radio frequency transceiver and the millimeter-wave beam former, the embodiments of the present application further provide a 5G millimeter-wave base station, which includes the foregoing millimeter-wave radio frequency transceiver and the foregoing millimeter-wave beam former.

[0044] The 5G millimeter-wave base station provided by the embodiments of the present application has the same implementation principle and technical effects as those of the foregoing amplifier embodiments. For the sake of brief description, for the parts not mentioned in the embodiments of the 5G millimeter-wave base station, reference may be made to the corresponding content in the foregoing amplifier embodiments.

[0045] Based on the foregoing embodiments of the millimeter-wave radio frequency transceiver and the millimeter-wave beam former, the present application further provides a satellite interconnection system, which includes the foregoing millimeter-wave radio frequency transceiver and the foregoing millimeter-wave beam former.

[0046] The satellite interconnection system provided by the embodiments of the present application has the same implementation principle and technical effects as those of the foregoing amplifier embodiments. For the sake of brief description, for the parts not mentioned in the embodiments of the satellite interconnection system, reference may be made to the corresponding content in the foregoing amplifier embodiments.

[0047] In the description of the present application, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application. In addition, the terms "first", "second", and "third" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance.

[0048] Finally, it should be noted that the above-described embodiments are only specific embodiments of the present application, which are used to illustrate the technical solutions of the present application, rather than to limit it. The protection scope of the present application is not limited thereto. Although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that any person skilled in the art within the technical scope disclosed by the present application can still modify the technical solutions described in the foregoing embodiments, or can easily think of changes, or perform equivalent replacements on some of the technical features; and these modifications, changes or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be covered by the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A millimeter-wave radio frequency power amplifier, characterized in that, The millimeter-wave radio frequency power amplifier includes: a pair of amplification tubes, a pair of cascode tubes, a DC-blocking capacitor for the pair of amplification tubes, a bias resistor, a grounding capacitor, a shunt capacitor, an output balun, and a pair of auxiliary tubes, a DC-blocking capacitor for the pair of auxiliary tubes; The input differential signal is connected to the gates of the pair of amplification tubes and the pair of auxiliary tubes through the DC-blocking capacitor for the pair of auxiliary tubes and the DC-blocking capacitor for the pair of amplification tubes; the sources of the pair of auxiliary tubes and the pair of amplification tubes are both grounded; the drains of the first amplification tube, the drain of the first cascode tube, and the source of the first auxiliary tube are all connected; the drains of the second amplification tube, the drain of the second cascode tube, and the source of the second auxiliary tube are all connected; the gates of the pair of cascode tubes are connected; the gate bias voltage of the cascode tube is connected to the gates of the pair of cascode tubes through the bias resistor, and the other end of the grounding capacitor is connected to the gates of the pair of cascode tubes; the drains of the pair of cascode tubes are connected to the shunt capacitor and the main coil inductance of the output balun, one end of the secondary coil inductance of the output balun is grounded, and the other end is connected to the single-ended output signal.

2. The millimeter-wave radio frequency power amplifier according to claim 1, wherein The DC-blocking capacitor for the pair of auxiliary tubes includes: a capacitor array structure with adjustable capacitance.

3. The millimeter-wave radio frequency power amplifier according to claim 1, wherein The capacitance value of the DC-blocking capacitor for the pair of auxiliary tubes is 3 to 7 times the capacitance value of the DC-blocking capacitor for the pair of amplification tubes.

4. The millimeter-wave radio frequency power amplifier according to claim 1, wherein The gate bias voltage of the pair of auxiliary tubes is 100 - 200 mV lower than the gate bias voltage of the pair of amplification tubes.

5. The millimeter-wave radio frequency power amplifier according to claim 1, characterized in that, The pair of auxiliary tubes is implemented by multiple sub-tubes, and the switching of the multiple sub-tubes is controlled by a digital enable signal.

6. The millimeter-wave radio frequency power amplifier according to claim 1, wherein The requirement for setting the gate bias voltage of the pair of auxiliary tubes is to make the pair of auxiliary tubes operate in deep class AB.

7. A millimeter-wave radio frequency transceiver, characterized in that, The millimeter-wave radio frequency transceiver includes the millimeter-wave radio frequency power amplifier according to any one of claims 1 - 6.

8. A millimeter wave beamformer, characterized in that, The millimeter-wave beam former includes the millimeter-wave radio frequency power amplifier according to any one of claims 1 - 6.

9. A 5G millimeter-wave base station, characterized in that, The 5G millimeter-wave base station includes the millimeter-wave radio frequency transceiver according to claim 7 and the millimeter-wave beam former according to claim 8.

10. A satellite interconnection system, characterized in that, The system includes the millimeter-wave radio frequency transceiver according to claim 7 and the millimeter-wave beam former according to claim 8.

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