Stacked modulation power supply module based on metal ceramic packaging

Abstract

The invention discloses a stacked modulation power supply module based on metal ceramic packaging. The stacked modulation power supply module comprises a lower-layer high-power circuit, an upper-layer control circuit, a plurality of metal cylinders, a metal ceramic tube shell and a metal cover plate, the lower-layer high-power circuit and the upper-layer control circuit are vertically connected through a plurality of metal cylinders to form a stacked structure; the stacked structure is integrated in a metal ceramic tube shell, and a metal cover plate is packaged on the top of the metal ceramic tube shell. According to the modulation power supply module, various power supply circuits are integrated into the same metal ceramic tube shell under the condition that the area of the module does not need to be greatly increased, the size of the modulation power supply module is reduced, the reliability of the power supply module in a complex environment is improved, and the modulation power supply module is widely applied to the field of modulation power supplies of radio frequency front ends of transmitting and receiving assemblies.

Description

Technical Field

[0001] The present invention belongs to the field of modulation power supplies, and particularly relates to a stacked modulation power supply module based on a cermet package. Background Art

[0002] With the development of science and technology, the miniaturization and integration of electronic systems are the current mainstream technical directions. Therefore, the modulation power supply module applied to the radio frequency front-end of transceiver components also has technical requirements for miniaturization and high integration.

[0003] However, traditional power supply modules are generally assembled from discrete devices on a printed circuit board. On the one hand, this type of power supply module is limited by the packaging of discrete devices and occupies a large volume in the transceiver front-end components with high integration requirements, seriously affecting the volume size and cost of the components. On the other hand, since the components are all installed in the form of bare cores or plastic packages, there are also relatively large risks in the overall reliability of the power supply module when working in a harsh environment. Summary of the Invention

[0004] Object of the Invention: The object of the present invention is to provide a stacked modulation power supply module based on a cermet package, which integrates all circuit units in the same cermet case, can significantly reduce the volume of the modulation power supply module, and improve the reliability of the power supply module at the same time.

[0005] Technical Solution: A stacked modulation power supply module based on a cermet package of the present invention includes a lower-layer high-power circuit, an upper-layer control circuit, a plurality of metal columns, a cermet case, and a metal cover plate;

[0006] The lower-layer high-power circuit and the upper-layer control circuit are vertically connected through a plurality of metal columns to form a stacked structure; the stacked structure is integrated in the cermet case, and the top of the cermet case is encapsulated with a metal cover plate.

[0007] Further, the metal cover plate is encapsulated on the top of the cermet case by a parallel seam welding process.

[0008] Further, the upper-layer control circuit is installed above a plurality of metal columns by a cryogenic electrical installation process.

[0009] Further, the plurality of metal columns are large metal cylinders with a length of 0.75 mm - 1.5 mm and a diameter of 0.5 mm - 0.6 mm, or small metal cylinders with a length of 0.3 mm - 0.5 mm and a diameter of 0.3 mm - 0.4 mm.

[0010] Further, a metal heat sink structure is embedded at the bottom inside the cermet case, the lower-layer high-power circuit is placed above the metal heat sink structure, and the metal heat sink structure is used to enhance the heat dissipation of the lower-layer high-power circuit.

[0011] Further, one end of the plurality of metal columns is connected to the control port of the lower-layer high-power circuit, and the other end is connected to the upper-layer control circuit.

[0012] Further, both the lower-layer high-power circuit and the upper-layer control circuit are assembled by micro-assembly process, and all the internal drive chips are bare chips.

[0013] Further, the lower-layer high-power circuit includes high-power MOSFET devices and drive resistors connected to the gates of the high-power MOSFET devices.

[0014] Further, the upper-layer control circuit includes a MOSFET device drive circuit, a positive-negative voltage conversion circuit, a negative voltage regulation circuit, and a timing management circuit; one output end of the positive-negative voltage conversion circuit is connected to the negative voltage regulation circuit, and the other output end is connected to the input end of the MOSFET device drive circuit through the timing management circuit.

[0015] Further, the MOSFET device drive circuit receives an external input signal, drives and amplifies the input signal, and provides a drive signal for the lower-layer high-power circuit.

[0016] Beneficial effects: Compared with the prior art, the remarkable technical effects of the present invention are as follows:

[0017] Through the design of the up-and-down stacked structure, circuit units such as high-power circuits, drive circuits, and auxiliary power supply circuits can be integrated in the same metal-ceramic package, which can effectively reduce the volume of the power module, and the size only accounts for about 50% of the traditional technology;

[0018] The combination of the metal-ceramic package and the metal cover can achieve airtightness, have good heat dissipation, and can also achieve electromagnetic signal shielding, effectively isolating the interference of high-power microwave signals. Therefore, it can well protect the internal circuit in harsh environments and complex electromagnetic environments, and thus significantly improve the reliability of the modulation power module.

[0019] The discrete devices are directly designed in the form of bare chips and assembled through the micro-assembly process. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is an exploded view of the components of the present invention;

[0021] Figure 2 is the working principle diagram of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0022] The technical solutions of the present invention will be introduced in detail below in combination with the specific embodiments and the drawings in the specification.

[0023] As Figure 1As shown in the figure, a stacked modulation power supply module based on cermet packaging according to the present invention includes a lower-layer high-power circuit 1, an upper-layer control circuit 2, a plurality of metal columns 3, a cermet package 4, and a metal cover plate 5. The lower-layer high-power circuit 1 and the upper-layer control circuit 2 are vertically connected through a plurality of metal columns 3 to form a stacked structure, which can not only achieve mechanical connection between the two-layer structure, but also ensure electrical connection between the upper and lower circuits. The stacked structure design can effectively reduce the volume of the power supply module, and the size only accounts for about 50% of the traditional technology. The stacked structure is integrated in the cermet package 4, and the metal cover plate 5 is packaged on the top of the cermet package 4. In this embodiment, one end of a plurality of metal columns 3 is connected to the control port of the lower-layer high-power circuit 1, and the other end is connected to the upper-layer control circuit 2. In this embodiment, the metal cover plate 5 is packaged on the top of the cermet package 4 by parallel seam welding process to achieve high-density packaging of the modulation power supply module.

[0024] Both the lower-layer high-power circuit 1 and the upper-layer control circuit 2 are assembled by micro-assembly process, and all the internal driver chips are bare chips. Based on the micro-assembly process, the present invention divides the power supply module circuit into upper and lower part circuits. By using the stacked structure and realizing mechanical connection and electrical connection between the upper and lower layer circuits through metal columns, the space utilization rate of the power supply module is improved, and high integration and miniaturization design of the power supply module are achieved.

[0025] A plurality of metal columns 3 are large metal cylinders with a length of 0.75 mm - 1.5 mm and a diameter of 0.5 mm - 0.6 mm, or small metal cylinders with a length of 0.3 mm - 0.5 mm and a diameter of 0.3 mm - 0.4 mm.

[0026] A metal heat sink structure is embedded at the bottom inside the cermet package 4, and the lower-layer high-power circuit 1 is placed above the metal heat sink structure. The metal heat sink structure is used to strengthen the heat dissipation of the lower-layer high-power circuit 1. Since the current of the lower-layer high-power circuit 1 is large and the heat dissipation is large, the heat dissipation is strengthened by embedding the metal heat sink structure at the bottom of the cermet package 4.

[0027] During installation, the wiring of the lower-layer high-power circuit 1 is integrated inside the cermet package 4. A plurality of metal columns 3 are installed inside the cermet package 4 by high-temperature brazing process during the manufacturing process of the cermet package 4, so that the metal columns 3 are connected to the interface of the lower-layer high-power circuit module 1. Then, the upper-layer control circuit 2 is installed above a plurality of metal columns 3 by low-temperature electrical installation process, and it is slightly higher than the lower-layer high-power circuit module 1 as a whole to ensure reliable mechanical connection and electrical connection between the lower-layer high-power circuit 1 and the upper-layer control circuit 2. Finally, the metal cover plate 5 is installed on the cermet package 4 by parallel seam welding process to achieve high-density packaging of the modulation power supply module. The final size of the module is 10 mm * 10 mm * 4 mm.

[0028] As Figure 2 shown, the lower-layer high-power circuit 1 includes high-power MOSFET devices and driving resistors. The driving resistors are connected to the gates of the high-power MOSFET devices. This part of the circuit, as the main power circuit of the modulation power supply, has a relatively large heat dissipation. Heat dissipation can be enhanced by adding structures such as metal heat sinks at the bottom of the package.

[0029] The upper-layer control circuit 2 includes a MOSFET driving circuit, a positive-negative voltage conversion circuit, a negative voltage regulation circuit, a timing management circuit, etc. One output terminal of the positive-negative voltage conversion circuit is connected to the negative voltage regulation circuit, and the other output terminal is connected to the input terminal of the MOSFET driving circuit through the timing management circuit. The output terminal of the MOSFET driving circuit is connected to the driving resistor in the lower-layer high-power circuit 1.

[0030] Among them, the MOSFET driving circuit is composed of a driving chip, resistors, and capacitors. It receives external input signals, amplifies the signals through driving, and then outputs them to the lower-layer driving resistors to control the turn-on and turn-off of the lower-layer high-power MOSFET devices with these signals. The positive-negative voltage conversion circuit is composed of a charge pump chip and capacitors. It converts the received external auxiliary power supply into a negative voltage, and outputs it to the negative voltage regulation circuit and the timing management circuit respectively, and outputs a stable negative voltage externally. The timing management circuit is composed of capacitors and resistors. It processes the received negative voltage signals and then outputs them to the MOSFET driving circuit. The negative voltage regulation circuit is composed of a gate voltage regulation chip, resistors, capacitors, etc. It converts the received negative voltage into a reliable gate voltage and outputs it.

[0031] The present invention adopts a stacked structure design, which can effectively improve the space utilization rate of the modulation power supply module and realize the miniaturization design of the modulation power supply module. Integrating multiple modulation power supply circuits into the same metal-ceramic package 4 realizes the high integration of the modulation power supply module. Using the metal-ceramic package 4 and the metal cover plate 5 to achieve high-density packaging also improves the reliability of the modulation power supply module in harsh environments and complex electromagnetic environments. Due to the high integration and small size of the modulation power supply module of the present invention, it can be widely applied to the modulation power supply field of the radio frequency front end of the transceiver module to supply power to the radio frequency power amplifier.

[0032] The present invention integrates multiple power supply circuits into the same metal-ceramic package without significantly increasing the module area, which not only reduces the volume of the modulation power supply module but also improves the reliability of the power supply module in complex environments, and has a wide application in the modulation power supply field of the radio frequency front end of the transceiver module.

Claims

1. A stacked modulation power supply module based on cermet packaging, characterized in that: It includes a lower-layer high-power circuit (1), an upper-layer control circuit (2), several metal cylinders (3), a metal-ceramic package (4), and a metal cover plate (5); The lower-layer high-power circuit (1) and the upper-layer control circuit (2) are vertically connected by several metal cylinders (3) to form a stacked structure; the stacked structure is integrated in the metal-ceramic package (4), and the top of the metal-ceramic package (4) is encapsulated with a metal cover plate (5).

2. The stacked modulation power supply module based on cermet packaging according to claim 1, wherein: The metal cover plate (5) is encapsulated on the top of the metal-ceramic package (4) by using the parallel seam welding process.

3. The stacked modulation power supply module based on cermet packaging according to claim 1, characterized in that: The upper-layer control circuit (2) is installed above several metal cylinders (3) by using the cryogenic electrical installation process.

4. The stacked modulation power supply module based on cermet packaging according to claim 1, characterized in that: The several metal cylinders (3) are large metal cylinders with a length of 0.75 mm - 1.5 mm and a diameter of 0.5 mm - 0.6 mm, or small metal cylinders with a length of 0.3 mm - 0.5 mm and a diameter of 0.3 mm - 0.4 mm.

5. The stacked modulation power supply module based on cermet packaging according to claim 1, wherein: A metal heat sink structure is embedded at the inner bottom of the metal-ceramic package (4), and the lower-layer high-power circuit (1) is placed above the metal heat sink structure, and the metal heat sink structure is used to enhance the heat dissipation of the lower-layer high-power circuit (1).

6. The stacked modulation power supply module based on cermet packaging according to claim 1, characterized in that: One end of the several metal cylinders (3) is connected to the control port of the lower-layer high-power circuit (1), and the other end is connected to the upper-layer control circuit (2).

7. The stacked modulation power supply module based on cermet packaging according to claim 1, wherein: Both the lower-layer high-power circuit (1) and the upper-layer control circuit (2) are assembled by using the micro-assembly process, and all the internal drive chips use bare chips.

8. The stacked modulation power supply module based on cermet packaging according to claim 1, characterized in that: The lower-layer high-power circuit (1) includes high-power MOSFET devices and drive resistors connected to the gates of the high-power MOSFET devices.

9. The stacked modulation power supply module based on cermet packaging according to claim 1, wherein: The upper-layer control circuit (2) includes a MOSFET drive circuit, a positive-negative voltage conversion circuit, a negative voltage regulation circuit, and a timing management circuit; One output end of the positive-negative voltage conversion circuit is connected to the negative voltage regulation circuit, and the other output end is connected to the input end of the MOSFET device drive circuit through the timing management circuit.

10. The stacked modulation power supply module based on cermet packaging according to claim 1, characterized in that: The MOSFET device drive circuit receives an external input signal, and after driving and amplifying the input signal, provides a drive signal for the lower-layer high-power circuit (1).

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