Image sensor having patterned Anti-reflection layer and electronic device including the same

Abstract

There is provided an image sensor including: a sensor substrate including a plurality of pixels configured to sense light, the plurality of pixels being two-dimensionally disposed; the nanometer photon lens array comprises a plurality of meta-glume areas which respectively correspond to the plurality of pixels; and an anti-reflection layer on the light incident surface of the nanophotonic lens array, the anti-reflection layer configured to reduce reflection loss and including a plurality of nanopatterns disposed periodically and two-dimensionally, in which the plurality of meta-regions include a plurality of nanostructures, the plurality of nano-structures including a plurality of metasurfaces, the plurality of metasurfaces including a plurality of metasurfaces, and the plurality of metasurfaces including a plurality of metasurfaces. The plurality of nanostructures is configured to color separate light incident on the nanophoton lens array and focus the light onto each of the plurality of pixels.

Description

Cross - reference to Related Applications

[0001] This application claims priority to Korean Patent Application Nos. 10 - 2024 - 0010995, filed on January 24, 2024, and 10 - 2024 - 0119570, filed on September 3, 2024, with the Korean Intellectual Property Office, the entire disclosures of which are incorporated herein by reference. Technical Field

[0002] Embodiments of the present disclosure relate to an image sensor having a patterned antireflection layer and an electronic device including the image sensor. Background Art

[0003] An image sensor may sense the color of incident light by using color filters. However, since the color filters absorb light of colors other than the intended color, the color filters may have a relatively low light utilization efficiency. For example, in the case of using a red - green - blue (RGB) color filter, only 1 / 3 of the incident light is transmitted therethrough, and the remaining part of the incident light (i.e., 2 / 3 of the incident light) is absorbed. Thus, the light utilization efficiency is only about 33%. Therefore, in a color display device or a color image sensor, most of the light loss occurs in the color filters. In addition, an image sensor includes a plurality of layers having different refractive indices from each other, and thus incident light may be reflected by the interface layers. To improve the light utilization efficiency of the image sensor, the image sensor needs to have a low reflectivity with respect to incident light. Summary of the Invention

[0004] One or more embodiments provide an image sensor having a patterned antireflection layer and an electronic device including the image sensor.

[0005] Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of one or more embodiments.

[0006] According to one aspect of one or more embodiments, an image sensor is provided. The image sensor includes: a sensor substrate including a plurality of pixels configured to sense light, the plurality of pixels being two-dimensionally arranged; a nanophotonic lens array including a plurality of metasurfaces respectively corresponding to the plurality of pixels; and an antireflection layer on a light incident surface of the nanophotonic lens array, the antireflection layer being configured to reduce reflection loss and including a plurality of nanopatterns periodically and two-dimensionally arranged. Wherein, the plurality of metasurfaces include a plurality of nanostructures configured to perform color separation on light incident on the nanophotonic lens array and focus the light onto each of the plurality of pixels. And wherein, when the distance between a first nanostructure among the plurality of nanostructures and a first nanopattern among the plurality of nanopatterns closest to the first nanostructure is g1 and the distance between a second nanostructure different from the first nanostructure among the plurality of nanostructures and a second nanopattern among the plurality of nanopatterns closest to the second nanostructure is g2, |g1 - g2| = Δg satisfies the condition Δg ≤ T / 4, where T represents the arrangement period of the plurality of nanopatterns.

[0007] At a central portion of the nanophotonic lens array, g1 can be 0.

[0008] At a central portion of the nanophotonic lens array, the first nanostructure and the first nanopattern closest to the first nanostructure can be arranged such that the first nanostructure and the first nanopattern do not overlap with each other.

[0009] The first nanostructure can be at a central portion of the nanophotonic lens array, and g1 is T / 2.

[0010] Δg can be 0 with respect to the entire region of the nanophotonic lens array.

[0011] The first nanostructure can be at a central portion where the incident light of the nanophotonic lens array is perpendicularly incident, the second nanostructure can be at a peripheral portion where the incident light of the nanophotonic lens array is obliquely incident, and wherein, g1 can be different from g2.

[0012] At a central portion where the incident light of the nanophotonic lens array is perpendicularly incident, the plurality of pixels and the plurality of metasurfaces corresponding to each other can be matched, and at a peripheral portion where the incident light of the nanophotonic lens array is obliquely incident, the plurality of metasurfaces can be offset toward the central portion of the nanophotonic lens array with respect to the corresponding pixels among the plurality of pixels.

[0013] At the peripheral portion of the nano-photonic lens array, the plurality of nano-patterns of the anti-reflection layer may be offset toward the central portion of the nano-photonic lens array, and the deviation between the offset distances of the plurality of meta-regions and the offset distances of the plurality of nano-patterns may be within ±1 / 4 of the arrangement period of the plurality of nano-patterns.

[0014] Throughout the entire region of the nano-photonic lens array, the offset distances of the plurality of meta-regions and the offset distances of the plurality of nano-patterns may be equal to each other.

[0015] The pitch between the plurality of nanostructures may be equal to the pitch between the plurality of nano-patterns.

[0016] The image sensor may further include a color filter layer located between the sensor substrate and the nano-photonic lens array and a planarization layer located between the color filter layer and the nano-photonic lens array.

[0017] The color filter layer may include: a first color filter configured to transmit light of a first wavelength; a second color filter configured to transmit light of a second wavelength different from the first wavelength; a third color filter configured to transmit light of a third wavelength different from the first wavelength and the second wavelength; and a fourth color filter configured to transmit light of the first wavelength. The plurality of pixels may include a first pixel corresponding to the first color filter, a second pixel corresponding to the second color filter, a third pixel corresponding to the third color filter, and a fourth pixel corresponding to the fourth color filter, and the plurality of meta-regions may include a first meta-region corresponding to the first pixel, a second meta-region corresponding to the second pixel, a third meta-region corresponding to the third pixel, and a fourth meta-region corresponding to the fourth pixel.

[0018] At the central portion where the incident light of the nano - photonic lens array is incident vertically, the boundaries of the corresponding first pixels, the boundaries of the first color filters, and the boundaries of the first metasurfaces can match each other; the boundaries of the corresponding second pixels, the boundaries of the second color filters, and the boundaries of the second metasurfaces can match each other; the boundaries of the corresponding third pixels, the boundaries of the third color filters, and the boundaries of the third metasurfaces can match each other; and the boundaries of the corresponding fourth pixels, the boundaries of the fourth color filters, and the boundaries of the fourth metasurfaces can match each other. And at the peripheral portion where the incident light of the nano - photonic lens array is incident obliquely, the first color filter, the second color filter, the third color filter, and the fourth color filter can be respectively offset by a first distance toward the central portion of the nano - photonic lens array with respect to the first pixel, the second pixel, the third pixel, and the fourth pixel corresponding to the first color filter, the second color filter, the third color filter, and the fourth color filter, and the first metasurface, the second metasurface, the third metasurface, and the fourth metasurface can be respectively offset by a second distance greater than the first distance toward the central portion of the nano - photonic lens array with respect to the first pixel, the second pixel, the third pixel, and the fourth pixel corresponding to the first metasurface, the second metasurface, the third metasurface, and the fourth metasurface.

[0019] At the peripheral portion of the nano - photonic lens array, the plurality of nano - patterns can be offset by a third distance toward the central portion of the nano - photonic lens array, and in the entire region of the nano - photonic lens array, the condition d2 - T / 4 ≤ d3 ≤ d2 + T / 4 can be satisfied, where d2 represents the second distance and d3 represents the third distance.

[0020] Each of the plurality of nano - structures can include a first nano - structure layer and a second nano - structure layer on the first nano - structure layer, and g1 corresponds to the distance between the second nano - structure layer of the first nano - structure and the first nano - pattern, and g2 corresponds to the distance between the second nano - structure layer of the second nano - structure and the second nano - pattern.

[0021] At the peripheral portion where the incident light of the nano - photonic lens array is incident obliquely, the second nano - structure layer can be offset toward the central portion of the nano - photonic lens array.

[0022] The antireflection layer can include a first antireflection layer and a second antireflection layer on the first antireflection layer. The first antireflection layer can be a film structure and is on the nano - photonic lens array, and the second antireflection layer can include the plurality of nano - patterns.

[0023] The antireflection layer may further include a dielectric layer that is transparent to visible light, and the plurality of nanopatterns may include holes formed through the dielectric layer.

[0024] The arrangement period of the plurality of nanopatterns may be from 150 nm to 300 nm, and the width or diameter of each of the plurality of nanopatterns may be 60% to 90% of the arrangement period of the plurality of nanopatterns.

[0025] According to another aspect of one or more embodiments, an electronic device is provided, the electronic device including: a lens assembly configured to form an optical image of an object; an image sensor configured to convert the optical image formed by the lens assembly into an electrical signal; and at least one processor configured to process the electrical signal generated by the image sensor, wherein the image sensor includes: a sensor substrate including a plurality of pixels configured to sense light, the plurality of pixels being two-dimensionally arranged; a nanophotonic lens array including a plurality of metasurfaces respectively corresponding to the plurality of pixels; and an antireflection layer on a light incident surface of the nanophotonic lens array, the antireflection layer being configured to reduce reflection loss and including a plurality of nanopatterns periodically and two-dimensionally arranged, wherein the plurality of metasurfaces include a plurality of nanostructures configured to perform color separation on light incident on the nanophotonic lens array and focus the light onto each of the plurality of pixels, and wherein when the distance between a first nanostructure among the plurality of nanostructures and a first nanopattern among the plurality of nanopatterns closest to the first nanostructure is g1 and the distance between a second nanostructure different from the first nanostructure among the plurality of nanostructures and a second nanopattern among the plurality of nanopatterns closest to the second nanostructure is g2, |g1 - g2| = Δg satisfies the condition Δg ≤ T / 4, where T represents the arrangement period of the plurality of nanopatterns.

[0026] According to another aspect of one or more embodiments, an image sensor is provided, the image sensor including: a sensor substrate including a plurality of pixels configured to sense light, the plurality of pixels being two-dimensionally arranged; a nanophotonic lens array including a plurality of metasurfaces respectively corresponding to the plurality of pixels; and an antireflection layer on a light incident surface of the nanophotonic lens array, the antireflection layer being configured to reduce reflection loss and including a plurality of nanopatterns periodically and two-dimensionally arranged, wherein the plurality of metasurfaces include a plurality of nanostructures configured to perform color separation on light incident on the nanophotonic lens array and focus the light onto each of the plurality of pixels, wherein when a distance between a first nanostructure among the plurality of nanostructures and a first nanopattern among the plurality of nanopatterns closest to the first nanostructure is g1 and a distance between a second nanostructure different from the first nanostructure among the plurality of nanostructures and a second nanopattern among the plurality of nanopatterns closest to the second nanostructure is g2, |g1 - g2| = Δg satisfies the condition Δg ≤ T / 4, where T represents an arrangement period of the plurality of nanopatterns, and wherein at a peripheral portion of the nanophotonic lens array where incident light is obliquely incident, the plurality of metasurfaces and the plurality of nanopatterns of the antireflection layer are offset with respect to corresponding pixels among the plurality of pixels toward a central portion of the nanophotonic lens array. Description of the Drawings

[0027] The above and other aspects, features, and advantages of one or more embodiments will become more apparent from the following description in conjunction with the accompanying drawings, in which:

[0028] Figure 1 is a block diagram of an image sensor according to one or more embodiments;

[0029] Figure 2A 、 Figure 2B and Figure 2C are diagrams showing examples of various pixel arrangements in a pixel array of the image sensor;

[0030] Figure 3 is a perspective view schematically showing a structure of a pixel array in an image sensor according to one or more embodiments;

[0031] Figure 4 is schematically showing Figure 3 a plan view of a structure of a sensor substrate in a pixel array of;

[0032] Figure 5 is schematically showing Figure 3 a plan view of a structure of a color filter layer of;

[0033] Figure 6 is a plan view showing an example of a nanophotonic lens array; Figure 3

[0034] Figure 7 is a diagram showing an example of the phase distributions of green light and blue light after passing through the nanophotonic lens array;

[0035] Figure 8 is a diagram showing an example of the phase distributions of red light and green light after passing through the nanophotonic lens array;

[0036] Figure 9 is a plan view showing an example of an antireflection layer; Figure 3

[0037] Figure 10 is a diagram showing an example of the positions of the central part and the peripheral part of a pixel array having different chief ray angles (CRA) of incident light;

[0038] Figure 11 is a cross-sectional view schematically showing the cross-sectional structure of a pixel array at the central part of the pixel array according to one or more embodiments;

[0039] Figure 12 is a diagram showing an example of the relative positions between the nanostructures in the nanophotonic lens array and the nanopatterns of the antireflection layer in the central part of the pixel array according to one or more embodiments;

[0040] Figure 13 is a cross-sectional view schematically showing the cross-sectional structure of a pixel array at the peripheral part of the pixel array according to one or more embodiments;

[0041] Figure 14 is a diagram showing an example of the relative positions between the nanostructures in the nanophotonic lens array and the nanopatterns of the antireflection layer at a first position in the peripheral part of the pixel array according to one or more embodiments;

[0042] Figure 15 is a diagram showing an example of the relative positions between the nanostructures in the nanophotonic lens array and the nanopatterns of the antireflection layer at a second position in the peripheral part of the pixel array according to one or more embodiments;

[0043] Figure 16 is a diagram showing an example of the relative positions between the nanostructures in the nanophotonic lens array and the nanopatterns of the antireflection layer in the central part of the pixel array according to one or more other embodiments;

[0044] Figure 17 ​​is a diagram showing an example of the relative positions of nanostructures in a nanophotonic lens array and a nanopattern of an antireflection layer at a first position in a peripheral portion of a pixel array according to one or more other embodiments;

[0045] Figure 18 is a diagram showing an example of the relative positions of nanostructures in a nanophotonic lens array and a nanopattern of an antireflection layer at a second position in a peripheral portion of a pixel array according to one or more other embodiments;

[0046] Figure 19 is a cross-sectional view schematically showing a cross-sectional structure of a pixel array at a central portion of the pixel array according to one or more other embodiments;

[0047] Figure 20 is a cross-sectional view schematically showing a cross-sectional structure of a pixel array at a peripheral portion of the pixel array according to one or more other embodiments;

[0048] Figure 21 is a cross-sectional view schematically showing a cross-sectional structure of a pixel array at a central portion of the pixel array according to one or more other embodiments;

[0049] Figure 22 is a block diagram of an electronic device including an image sensor according to one or more embodiments;

[0050] Figure 23 is Figure 22 a block diagram of the camera module in;

[0051] Figure 24 is a block diagram of an electronic device including a multi-camera module; and

[0052] Figure 25 is Figure 24 a detailed block diagram of the multi-camera module in the electronic device of. Detailed Description

[0053] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the embodiments presented may have different forms and should not be construed as limited to the description set forth herein. Accordingly, the embodiments are described below only by reference to the drawings to explain the various aspects. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Expressions such as "at least one of... " modify the entire list of elements when following the list of elements, rather than modifying individual elements in the list. For example, the expression "at least one of a, b, and c" should be understood to include only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c.

[0054] Hereinafter, an image sensor including a patterned antireflection layer and an electronic device including the image sensor will be described in detail with reference to the drawings. Embodiments of the present disclosure can be variously modified and can be embodied in many different forms. In the drawings, like reference numerals denote like components, and for convenience of explanation, the sizes of components in the drawings may be exaggerated.

[0055] When a layer, film, region, or panel is referred to as being "on" another element, it can be directly on / under / left / right of another layer or substrate, or an intermediate layer may also be present.

[0056] It will be understood that although the terms "first", "second", etc. may be used herein to describe various components, these components should not be limited by these terms. These terms are only used to distinguish one component from another. These terms do not limit the materials or structures of the components from being different from each other.

[0057] Singular forms of expressions encompass plural forms unless the context clearly dictates otherwise. It will also be understood that when a part is referred to as "including" another component, the part may not exclude the other component, but may also include the other component, unless the context otherwise indicates.

[0058] In addition, terms such as "... unit", "module", etc. provided herein indicate units that perform functions or operations, and can be implemented by hardware, software, or a combination of hardware and software.

[0059] The use of terms such as "above" and similar indicative terms can correspond to both singular and plural forms.

[0060] In addition, the steps of all the methods described herein can be executed in any appropriate order, unless otherwise indicated herein or the context clearly indicates the contrary. Further, the use of all exemplary terms (e.g., etc.) is only for describing the technical spirit in detail, and the scope of the rights is not limited by these terms, unless the context is limited by the claims.

[0061] Figure 1 is a schematic block diagram of an image sensor 1000 according to one or more embodiments. Referring to Figure 1 , the image sensor 1000 may include a pixel array 1100, a timing controller (T / C) 1010, a row decoder 1020, and an output circuit 1030. The image sensor 1000 may be a charge-coupled device (CCD) image sensor or a complementary metal oxide semiconductor (CMOS) image sensor.

[0062] The pixel array 1100 includes pixels two-dimensionally arranged in a plurality of rows and columns. The row decoder 1020 selects one of the rows in the pixel array 1100 in response to a row address signal output from the timing controller 1010. The output circuit 1030 outputs a photosensitive signal from a plurality of pixels arranged in the selected row in units of columns. To this end, the output circuit 1030 may include a column decoder and an analog-to-digital converter (ADC). For example, the output circuit 1030 may include a plurality of ADCs respectively arranged in columns between the column decoder and the pixel array 1100, or include one ADC arranged at the output terminal of the column decoder. The timing controller 1010, the row decoder 1020, and the output circuit 1030 may be implemented as one chip or separate chips. A processor for processing the image signal output from the output circuit 1030 may be implemented as one chip together with the timing controller 1010, the row decoder 1020, and the output circuit 1030.

[0063] The pixel array 1100 may include a plurality of pixels that sense light of different wavelengths. The pixel arrangement can be implemented in various ways. For example, Figures 2A to 2C shows various pixel arrangements in the pixel array 1100 of the image sensor 1000.

[0064] Figure 2A shows the Bayer pattern commonly used in the image sensor 1000. Referring to Figure 2A, a unit pattern includes four quadrant regions. Among them, the first quadrant to the fourth quadrant can be a blue pixel B, a green pixel G, a red pixel R, and a green pixel G respectively. The unit pattern can be arranged two-dimensionally and repetitively along a first direction (X direction) and a second direction (Y direction). For example, in a 2×2 array of unit patterns, two green pixels G are arranged along one diagonal direction, and one blue pixel B and one red pixel R are arranged along the other diagonal direction. In the entire arrangement of pixels, a first row in which multiple green pixels G and multiple blue pixels B are alternately arranged along the first direction and a second row in which multiple red pixels R and multiple green pixels G are alternately arranged along the first direction are arranged repetitively along the second direction.

[0065] The pixel array 1100 can have various arrangement patterns other than the Bayer pattern. For example, referring to Figure 2B , a CYGM arrangement in which a unit pattern is configured with a magenta pixel M, a cyan pixel C, a yellow pixel Y, and a green pixel G can be used. In addition, referring to Figure 2C , an RGBW arrangement in which a unit pattern is configured with a green pixel G, a red pixel R, a blue pixel B, and a white pixel W can be used. The unit pattern can have a 3×2 array form. In addition to the above examples, the pixels in the pixel array 1100 can be arranged in various ways according to the color characteristics of the image sensor 1000. Hereinafter, it will be described that the pixel array 1100 of the image sensor 1000 has a Bayer pattern, but the operating principle can be applied to other pixel arrangement patterns other than the Bayer pattern.

[0066] Hereinafter, for ease of description, an example in which the pixel array 1100 has a Bayer pattern structure will be described as an example.

[0067] Figure 3 is a perspective view schematically showing the structure of the pixel array 1100 in an image sensor according to one or more embodiments. Referring to Figure 3 , the pixel array 1100 can include a sensor substrate 110, a color filter layer 120 provided on the sensor substrate 110, a planarization layer 130 provided on the color filter layer 120, a nanophotonic lens array 140 provided on the planarization layer 130, and an antireflection layer 150 provided on the nanophotonic lens array 140. The color filter layer 120 can be provided between the sensor substrate 110 and the nanophotonic lens array 140, and the planarization layer 130 can be provided between the color filter layer 120 and the nanophotonic lens array 140.

[0068] Figure 4 is a schematic illustration of Figure 3 the structure of the sensor substrate 110 in the pixel array 1100. Referring to Figure 4, the sensor substrate 110 may include a plurality of pixels that sense incident light. For example, the sensor substrate 110 may include a first pixel 111, a second pixel 112, a third pixel 113, and a fourth pixel 114 that convert incident light into an electrical signal and generate an image signal. The first pixel 111, the second pixel 112, the third pixel 113, and the fourth pixel 114 may form a unit pixel pattern. The unit pixel pattern may include, for example, a Bayer pattern. For example, the first pixel 111 and the fourth pixel 114 may be green pixels that sense green light, the second pixel 112 may be a blue pixel that senses blue light, and the third pixel 113 may be a red pixel that senses red light.

[0069] Figure 3 and Figure 4 Only one unit pixel pattern including four pixels is shown as an example, but the pixel array 1100 may include a plurality of pixel patterns arranged two-dimensionally. For example, a plurality of first pixels 111 and a plurality of second pixels 112 may be alternately arranged in a first direction (X direction), and a plurality of third pixels 113 and a plurality of fourth pixels 114 may be alternately arranged in the first direction (X direction) at cross-sections at different positions in a second direction (Y direction) perpendicular to the first direction (X direction). Therefore, a plurality of first pixels 111, a plurality of second pixels 112, a plurality of third pixels 113, and a plurality of fourth pixels 114 may be arranged two-dimensionally in the first direction and the second direction.

[0070] Each of the first to fourth pixels 111, 112, 113, and 114 may include a plurality of photosensitive units that independently sense incident light. For example, each pixel of the first to fourth pixels 111, 112, 113, and 114 may include first to fourth photosensitive units C1, C2, C3, and C4. The first to fourth photosensitive units C1, C2, C3, and C4 may be arranged two-dimensionally in a first direction (X direction) and a second direction (Y direction). For example, in each of the first to fourth pixels 111, 112, 113, and 114, the first to fourth photosensitive units C1, C2, C3, and C4 may be arranged in a 2×2 array.

[0071] Figure 4 An example in which each of the first to fourth pixels 111, 112, 113, and 114 includes four photosensitive units is shown, but four or more independent photosensitive units may be grouped and arranged two-dimensionally. For example, each pixel of the first to fourth pixels 111, 112, 113, and 114 may include a plurality of independent photosensitive units that are grouped and arranged in a 3×3 array or a 4×4 array. Hereinafter, for ease of description, an example in which each of the first to fourth pixels 111, 112, 113, and 114 includes photosensitive units arranged in a 2×2 array will be described.

[0072] According to one or more embodiments, an autofocus signal can be obtained from a difference between output signals of adjacent photosensitive units. For example, an autofocus signal in a first direction (X direction) can be generated from a difference between output signals from a first photosensitive unit C1 and a second photosensitive unit C2, a difference between output signals from a third photosensitive unit C3 and a fourth photosensitive unit C4, or a difference between a sum of output signals from the first photosensitive unit C1 and the third photosensitive unit C3 and a sum of output signals from the second photosensitive unit C2 and the fourth photosensitive unit C4. In addition, an autofocus signal in a second direction (Y direction) can be generated from a difference between output signals from the first photosensitive unit C1 and the third photosensitive unit C3, a difference between output signals from the second photosensitive unit C2 and the fourth photosensitive unit C4, or a difference between a sum of output signals from the first photosensitive unit C1 and the second photosensitive unit C2 and a sum of output signals from the third photosensitive unit C3 and the fourth photosensitive unit C4.

[0073] In addition, a general image signal can be obtained by summing output signals from the first to fourth photosensitive units C1, C2, C3, and C4. For example, a first green image signal can be generated by summing output signals from the first to fourth photosensitive units C1, C2, C3, and C4 of a first pixel 111, a blue image signal can be generated by summing output signals from the first to fourth photosensitive units C1, C2, C3, and C4 of a second pixel 112, a red image signal can be generated by summing output signals from the first to fourth photosensitive units C1, C2, C3, and C4 of a third pixel 113, and a second green image signal can be generated by summing output signals from the first to fourth photosensitive units C1, C2, C3, and C4 of a fourth pixel 114.

[0074] In addition, each of the first to fourth pixels 111, 112, 113, and 114 may include an isolation member DTI that electrically isolates a plurality of photosensitive units from each other. The isolation member DTI may have, for example, a deep trench isolation structure. The deep trench may be filled with air or an electrically insulating material. The isolation member DTI may extend in a first direction (X direction) and a second direction (Y direction) to divide each of the first to fourth pixels 111, 112, 113, and 114 into four. The first to fourth photosensitive units C1, C2, C3, and C4 in each of the first to fourth pixels 111, 112, 113, and 114 may be isolated from each other by the isolation member DTI. The isolation member DTI extending in the first direction (X direction) and the isolation member DTI extending in the second direction (Y direction) may cross each other at the center of each of the first to fourth pixels 111, 112, 113, and 114.

[0075] In addition, the isolation member DTI may be disposed between adjacent pixels among the first to fourth pixels 111, 112, 113, and 114 in the first direction (X direction) and the second direction (Y direction). Accordingly, the first to fourth pixels 111, 112, 113, and 114 may be isolated from each other due to the isolation member DTI. The isolation member DTI extending in the first direction (X direction) and the isolation member DTI extending in the second direction (Y direction) may cross each other at the center of a unit pixel pattern including the first to fourth pixels 111, 112, 113, and 114.

[0076] Figure 5 schematically shows Figure 3 a plan view of the structure of the color filter layer 120. Referring Figure 5 , the color filter layer 120 may include a plurality of color filters, each of which transmits light of a specific wavelength and absorbs light of wavelengths other than the specific wavelength. For example, the color filter layer 120 may include: a first color filter 121 that transmits light in a first wavelength band and absorbs light of wavelength bands other than the first wavelength; a second color filter 122 that transmits light in a second wavelength band different from the first wavelength band and absorbs light of wavelength bands other than the second wavelength; a third color filter 123 that transmits light in a third wavelength band different from the first and second wavelength bands and absorbs light of wavelength bands other than the third wavelength; and a fourth color filter 124 that transmits light in the first wavelength band and absorbs light of wavelength bands other than the first wavelength. Figure 5 Only one unit color pattern is shown, but a plurality of first color filters 121 and a plurality of second color filters 122 may be alternately arranged in the first direction (X direction), and a plurality of third color filters 123 and a plurality of fourth color filters 124 may be alternately arranged in a section at different positions in a second direction (Y direction) perpendicular to the first direction (X direction).

[0077] The first color filter 121 may be arranged to face the corresponding first pixel 111 in the third direction (Z direction), the second color filter 122 may be arranged to face the corresponding second pixel 112 in the third direction (Z direction), the third color filter 123 may be arranged to face the corresponding third pixel 113 in the third direction (Z direction), and the fourth color filter 124 may be arranged to face the corresponding fourth pixel 114 in the third direction (Z direction). Accordingly, the first pixel 111 and the fourth pixel 114 may sense light in a first wavelength band that passes through the first color filter 121 and the fourth color filter 124 corresponding to the first pixel 111 and the fourth pixel 114, respectively. In addition, the second pixel 112 may sense light in a second wavelength band that passes through the second color filter 122 corresponding to the second pixel 112. The third pixel 113 may sense light in a third wavelength that passes through the third color filter 123 corresponding to the third pixel 113. For example, the first color filter 121 and the fourth color filter 124 may be green color filters that transmit green light, the second color filter 122 may be a blue color filter that transmits blue light, and the third color filter 123 may be a red color filter that transmits red light.

[0078] Figure 5 The dotted lines shown indicate the spacers between the photosensitive units in the first to fourth pixels 111, 112, 113, and 114. As Figure 5 shown, the first to fourth color filters 121, 122, 123, and 124 may be arranged to face all of the photosensitive units in the first to fourth pixels 111, 112, 113, and 114 corresponding to the first to fourth color filters 121, 122, 123, and 124, respectively, in the third direction (Z direction). For example, the first color filter 121 covers and corresponds to all of the photosensitive units in the first pixel 111, the second color filter 122 covers and corresponds to all of the photosensitive units in the second pixel 112, the third color filter 123 covers and corresponds to all of the photosensitive units in the third pixel 113, and the fourth color filter 124 covers and corresponds to all of the photosensitive units in the fourth pixel 114.

[0079] Figure 6 is a plan view showing an example of the Figure 3 nanophotonic lens array 140. Refer to Figure 6, the nanophotonic lens array 140 may include a first metasurface region 141 corresponding to the first pixel 111, a second metasurface region 142 corresponding to the second pixel 112, a third metasurface region 143 corresponding to the third pixel 113, and a fourth metasurface region 144 corresponding to the fourth pixel 114. For example, the first metasurface region 141 may be arranged to face the first pixel 111 in the third direction (Z direction), the second metasurface region 142 may be arranged to face the second pixel 112 in the third direction (Z direction), the third metasurface region 143 may be arranged to face the third pixel 113 in the third direction (Z direction), and the fourth metasurface region 144 may be arranged to face the fourth pixel 114 in the third direction (Z direction). Figure 6 Only one unit superpattern is shown, but a plurality of first metasurface regions 141 and a plurality of second metasurface regions 142 may be alternately arranged along the first direction (X direction), and a plurality of third metasurface regions 143 and a plurality of fourth metasurface regions 144 may be alternately arranged at different positions in a cross-section in the second direction (Y direction) perpendicular to the first direction (X direction).

[0080] The first to fourth metasurface regions 141, 142, 143, and 144 of the nanophotonic lens array 140 may include a plurality of nanostructures NP, which are arranged to focus incident light onto the first to fourth pixels 111, 112, 113, and 114, respectively. The plurality of nanostructures NP may be arranged such that the phase of the light transmitted through the nanophotonic lens array 140 changes according to the position of the plurality of nanostructures NP on the nanophotonic lens array 140. The phase distribution of the transmitted light achieved by the nanophotonic lens array 140 may be determined according to the width (or diameter) and height of each nanostructure NP, as well as the arrangement period (or pitch) and arrangement type of the plurality of nanostructures NP. In addition, the behavior of the light passing through the nanophotonic lens array 140 may be determined according to the phase distribution of the transmitted light. For example, the plurality of nanostructures NP may be arranged to form a phase distribution to focus the light transmitted through the nanophotonic lens array 140.

[0081] The nanostructured NPs can each have a size smaller than the wavelength of visible light. The nanostructured NPs can have a size smaller than, for example, the wavelength of blue light. According to one or more embodiments, the ratio of the cross-sectional width (or diameter) of the nanostructured NPs to the arrangement period of the plurality of nanostructured NPs can be about 90% or less. Further, the ratio of the cross-sectional width (or diameter) of the nanostructured NPs to the arrangement period of the plurality of nanostructured NPs can be from about 60% to about 90%. For example, the cross-sectional width (or diameter) of the nanostructured NPs can be less than 400 nm, 300 nm, or 200 nm. For example, the cross-sectional width (or diameter) of the nanostructured NPs can be from about 80 nm to about 200 nm. The height of the nanostructured NPs can be from 500 nm to 1500 nm, and its height can be greater than its cross-sectional width. The nanostructured NPs can each have a structure including two or more layers stacked along a third direction (Z direction).

[0082] The nanostructured NPs can include materials having a relatively high refractive index compared to the peripheral material of the periphery of the nanostructured NPs and having a relatively low absorption rate in the visible light band. For example, the nanostructured NPs can include c-Si, p-Si, a-Si, and group III-V compound semiconductors (gallium phosphide (GaP), gallium nitride (GaN), gallium arsenide (GaAs), etc.), silicon carbide (SiC), titanium oxide (TiO2), silicon nitride (SiN3), zinc sulfide (ZnS), zinc selenide (ZnSe), silicon nitride (Si3N4), and / or combinations thereof. The periphery of the nanostructured NPs can be filled with a dielectric material having a relatively low refractive index compared to the nanostructured NPs and having a relatively low absorption rate in the visible light band. For example, the periphery of the nanostructured NPs can be filled with siloxane-based spin-on glass (SOG), silicon oxide (SiO2), Si3N4, aluminum oxide (Al2O3), air, etc.

[0083] The refractive index of the nanostructured NPs with respect to light having a wavelength of about 630 nm can be about 2.0 or greater, and the refractive index of the peripheral material with respect to light having a wavelength of about 630 nm can be from about 1.0 to about 2.0 or less. Further, the difference between the refractive index of the nanostructured NPs and the refractive index of the peripheral material can be about 0.5 or greater. The nanostructured NPs having a refractive index difference from the refractive index of the peripheral material can change the phase of the light passing through the nanostructured NPs. This is caused by the phase delay occurring due to the sub-wavelength shape size of the nanostructured NPs, and the degree to which the phase is delayed can be determined by the specific shape size and arrangement shape of the nanostructured NPs.

[0084] In the example, the nanophotonic lens array 140 may focus light in a first wavelength band of incident light onto the first pixel 111 and the fourth pixel 114, focus light in a second wavelength band onto the second pixel 112, and focus light in a third wavelength band onto the third pixel 113. Then, the incident light is separated by the nanophotonic lens array 140 according to wavelength and subsequently focused onto the first to fourth pixels 111, 112, 113, and 114. To this end, the plurality of nanostructures NP in the first to fourth metasurface regions 141, 142, 143, and 144 of the nanophotonic lens array 140 may be different types of nanostructures. Figure 6 It is shown that the nanostructures NP have the same diameter, but the embodiment is not limited thereto. For example, the diameters of the nanostructures NP may be different from each other. In addition, the nanostructures NP may be arranged in various arrangements. In addition, when the incident light is sufficiently color-separated by the nanophotonic lens array 140, the color filter layer 120 may be omitted.

[0085] Figure 7 is a diagram showing an example of the phase distribution of green light and blue light at the lower surface of the nanophotonic lens array after passing through the nanophotonic lens array. Refer to Figure 7 , the green light after passing through the nanophotonic lens array 140 may have a first green light phase distribution PPG1 that is maximum at the center of the first metasurface region 141 and decreases as it moves away from the center of the first metasurface region 141. For example, at a position immediately after passing through the nanophotonic lens array 140 (e.g., on the lower surface of the nanophotonic lens array 140 or the upper surface of the planarization layer 130), the phase of the green light is maximum at the center of the first metasurface region 141 and may decrease in concentric circles as it moves away from the center of the first metasurface region 141. When the phase of the green light emitted from the center of the first metasurface region 141 is set to 2π, light with a phase of 0.9π to 1.1π may be emitted from the centers of the second metasurface region 142 and the third metasurface region 143, light with a phase of 2π may be emitted from the center of the fourth metasurface region 144, and light with a phase of 1.1π to 1.5π may be emitted from the contact point between the first metasurface region 141 and the fourth metasurface region 144. Therefore, the difference between the phase of the green light that has passed through the center of the first metasurface region 141 and the phase of the green light that has passed through the centers of the second metasurface region 142 and the third metasurface region 143 may be about 0.9π to about 1.1π.

[0086] In addition, the first green light phase distribution PPG1 does not indicate that the phase delay amount of the light passing through the center of the first metasurface region 141 is the largest. Instead, when the phase of the light passing through the first metasurface region 141 is set to 2π and the phase delay amount of the light passing through another point is larger and has a phase value of 2π or more, the first green light phase distribution PPG1 can represent the remaining value after subtracting 2nπ, that is, the wrapped phase distribution. For example, when the phase of the light passing through the first metasurface region 141 is 2π and the phase of the light passing through the center of the second metasurface region 142 is 3π, the phase in the second metasurface region 142 can be π remaining after subtracting 2π (n = 1) from 3π.

[0087] In addition, the blue light passing through the nanophotonic lens array 140 can have a blue light phase distribution PPB, which is the largest at the center of the second metasurface region 142 and decreases as it moves away from the center of the second metasurface region 142. For example, at the position immediately after passing through the nanophotonic lens array 140, the phase of the blue light can be the largest at the center of the second metasurface region 142 and can decrease along concentric circles as it moves away from the center of the second metasurface region 142. For example, when the phase of the blue light at the center of the second metasurface region 142 is 2π, the phase at the centers of the first metasurface region 141 and the fourth metasurface region 144 can be about 0.9π to about 1.1π, and the phase at the center of the third metasurface region 143 can be less than the phases at the centers of the first metasurface region 141 and the fourth metasurface region 144, for example, about 0.5π to about 0.9π.

[0088] Then, among the incident light incident on the first metasurface region 141 and the incident light incident on a part of the second metasurface region 142 and a part of the third metasurface region 143 surrounding the first metasurface region 141, the green light can be focused on the first pixel 111 by the nanophotonic lens array 140. For example, according to the phase distribution of the green light described above with reference to Figure 7 The green light passing through the first green light convergence region is focused on the first pixel 111, and the first green light convergence region is obtained by connecting the centers of two second metasurface regions 142 and two third metasurface regions 143 that are adjacent to the first metasurface region 141 and contact one side thereof.

[0089] In addition, among the incident light incident on the second metasurface region 142 and the incident light incident on a part of the first metasurface region 141, a part of the third metasurface region 143, and a part of the fourth metasurface region 144 surrounding the second metasurface region 142, the blue light is focused on the second pixel 112 by the nanophotonic lens array 140. For example, according to the reference Figure 7Regarding the phase distribution of the described blue light, the blue light that has passed through the blue light convergence region is focused onto the second pixel 112, and the blue light convergence region is obtained by connecting the centers of four third metasurface regions 143 that are adjacent to the second metasurface region 142 and touch its vertices simultaneously.

[0090] Figure 8 is a diagram showing an example of the phase distributions of red light and green light after passing through the nanophotonic lens array 140. Refer to Figure 8 , the red light after passing through the nanophotonic lens array 140 can have a red light phase distribution PPR, which is maximum at the center of the third metasurface region 143 and decreases as it moves away from the center of the third metasurface region 143. For example, at the position immediately after passing through the nanophotonic lens array 140, on the lower surface of the nanophotonic lens array 140, the phase of the red light can be maximum at the center of the third metasurface region 143 and can decrease along concentric circles as it moves away from the center of the third metasurface region 143. When the phase of the red light at the center of the third metasurface region 143 is 2π, the phases at the centers of the first metasurface region 141 and the fourth metasurface region 144 can be approximately 0.9π to approximately 1.1π, and the phase at the center of the second metasurface region 142 can be less than the phases at the centers of the first metasurface region 141 and the fourth metasurface region 144, for example, approximately 0.5π to approximately 0.9π.

[0091] In addition, the green light that has passed through the nanophotonic lens array 140 can have a second green light phase distribution PPG2, which is maximum at the center of the fourth metasurface region 144 and decreases as it moves away from the center of the fourth metasurface region 144. Except that the second green light phase distribution PPG2 has the maximum phase at the center of the fourth metasurface region 144, the description regarding the first green light phase distribution PPG1 can also be applied to the second green light phase distribution PPG2.

[0092] Then, among the incident light incident on the third metasurface region 143 and the incident light incident on a part of the first metasurface region 141, a part of the second metasurface region 142, and a part of the fourth metasurface region 144 around the third metasurface region 143, the red light is focused onto the third pixel 113 by the nanophotonic lens array 140. For example, according to the reference Figure 8 Regarding the phase distribution of the described red light, the red light that has passed through the red light convergence region can be focused onto the third pixel 113, and the red light convergence region is obtained by connecting the centers of four second metasurface regions 142 that are adjacent to the third metasurface region 143 and touch its vertices simultaneously.

[0093] In addition, among the incident light incident on the fourth metasurface region 144 and the incident light incident on a part of the second metasurface region 142 and a part of the third metasurface region 143 surrounding the fourth metasurface region 144, green light can be focused onto the fourth pixel 114 by the nanophotonic lens array 140. For example, according to the phase distribution of the green light described above with reference to Figure 8 the green light that has passed through the second green light converging region can be focused onto the fourth pixel 114, and the second green light converging region is obtained by connecting the centers of two second metasurface regions 142 and two third metasurface regions 143 that are adjacent to the fourth metasurface region 144 and contact one side thereof.

[0094] Figure 9 shows Figure 3 a plan view of an example of the antireflection layer 150. Referring to Figure 9 , the antireflection layer 150 may have a structure patterned to have a plurality of nanopatterns arranged periodically and two-dimensionally. For example, the antireflection layer 150 may include a dielectric layer 151 that is transparent to visible light and a plurality of nanopatterns 151h disposed through the dielectric layer 151 in a third direction (Z direction). The dielectric layer 151 may include, for example, at least one of aluminum oxide (AlO), hafnium oxide (HfO), silicon nitride (SiN), SiO2, aluminum oxynitride (AlOC), aluminum oxynitride (AlON), and AlOCN or a combination thereof. According to one or more other embodiments, in addition to the above materials, the dielectric layer 151 may further include another inorganic material having a refractive index of 1 to 3. Each of the plurality of nanopatterns 151h may include a dielectric material having a refractive index different from that of the dielectric layer 151. For example, each of the plurality of nanopatterns 151h may include air. In this case, each of the plurality of nanopatterns 151h may include a hole formed in the dielectric layer 151. According to one or more other embodiments, in addition to air, each of the plurality of nanopatterns 151h may include a dielectric material filled in the holes of the dielectric layer 151. In Figure 9 it is shown that the hole has a circular shape, but the hole is not limited to a circular shape, and the hole may have various other shapes, such as an oval, a square, etc. In addition, in Figure 9 it is shown that the plurality of nanopatterns 151h are arranged in a square lattice, but the arrangement of the plurality of nanopatterns 151h is not limited thereto. For example, the plurality of nanopatterns 151h may be arranged in various other lattice shapes, such as a triangle, a hexagon, etc.

[0095] The antireflection layer 150 disposed on the light incident surface of the nanophotonic lens array 140 reduces the light reflection loss that occurs when the incident light is reflected by the nanophotonic lens array 140 below the antireflection layer 150. To this end, the effective refractive index (or average refractive index) of the antireflection layer 150 can be greater than the refractive index of air and can be less than the effective refractive index (or average refractive index) of the nanophotonic lens array 140. For example, when the refractive index range between the refractive index of air and the effective refractive index of the nanophotonic lens array 140 is divided into three ranges, the effective refractive index of the antireflection layer 150 can be in the middle range of the three divided refractive index ranges. For example, the effective refractive index of the antireflection layer 150 can be about 1.1 to about 1.3. The effective refractive index of the antireflection layer 150 can be determined by the refractive index and volume of the dielectric layer 151 and the refractive index and volume of the plurality of nanopatterns 151h. The effective refractive index of the nanophotonic lens array 140 can be determined by the refractive index and volume of the nanostructure NP and the refractive index and volume of the peripheral material. The arrangement period T of the plurality of nanopatterns 151h and the width or diameter W1 of each of the plurality of nanopatterns 151h can be determined such that the effective refractive index of the antireflection layer 150 satisfies the above conditions. Here, the arrangement period T of the plurality of nanopatterns 151h can be equal to the distance between the centers of two adjacent nanopatterns 151h in the first direction or the second direction.

[0096] Each of the plurality of nanopatterns 151h can have a size smaller than the wavelength of visible light. For example, the arrangement period T of the plurality of nanopatterns 151h can be about 300 nm or less, which is less than the wavelength of blue light. For example, the arrangement period T of the plurality of nanopatterns 151h can be about 150 nm to about 300 nm, or about 200 nm to about 280 nm. The width or diameter W1 of each of the plurality of nanopatterns 151h can be selected such that the effective refractive index of the antireflection layer 150 is greater than the refractive index of air and less than the effective refractive index of the nanophotonic lens array 140. For example, the width or diameter W1 of each of the plurality of nanopatterns 151h can be determined such that the effective refractive index of the antireflection layer 150 is about 1.1 to about 1.3. To this end, according to one or more embodiments, the ratio (W1 / T) of the width or diameter W1 of each of the plurality of nanopatterns 151h to the arrangement period T of the plurality of nanopatterns 151h can be about 60% or more. According to one or more other embodiments, the ratio (W1 / T) of the width or diameter W1 of each of the plurality of nanopatterns 151h to the arrangement period T of the plurality of nanopatterns 151h can be about 60% to about 90%. For example, the width or diameter W1 of each of the plurality of nanopatterns 151h can be about 90 nm to about 270 nm, about 120 nm to about 250 nm, or about 150 nm to about 220 nm.

[0097] In the example, the arrangement period T of the plurality of nano-patterns 151h may be the same over the entire area of the anti-reflection layer 150. In addition, the width or diameter W1 of each of the plurality of nano-patterns 151h may be the same over the entire area of the anti-reflection layer 150, and the shape of each of the plurality of nano-patterns 151h may be the same over the entire area of the anti-reflection layer 150. The widths of the plurality of pixels 111, 112, 113, and 114 in the sensor substrate 110 may be an integer multiple of the arrangement period T of the plurality of nano-patterns 151h. Then, the same number of nano-patterns 151h may be arranged in the regions of the anti-reflection layer 150 that face the plurality of pixels 111, 112, 113, and 114 in the third direction (Z direction), respectively.

[0098] In addition, the chief ray angle (CRA) of the light incident on the pixel array 1100 of the image sensor 1000 may vary depending on the position on the pixel array 1100. For example, when the incident angle of the light vertically incident on the light incident surface of the pixel array 1100 is 0°, the CRA of the light incident on the central portion of the pixel array 1100 may be 0° and increase as it moves away from the central portion of the pixel array.

[0099] For example, Figure 10 is a diagram showing an example of the positions of the central portion and the peripheral portion of the pixel array 1100 having different CRAs of incident light. In Figure 10 , the point indicated by "O" represents the center of the pixel array 1100. The CRA of the light incident on the center of the pixel array 1100 is 0°. Thus, the region on the pixel array 1100 where the CRA of the incident light is 0° may be the central portion of the pixel array 1100. According to one or more other embodiments, considering the convenience of the manufacturing process, even if the CRA of the incident light is not exactly 0°, the region around the center of the pixel array 1100 may be the central portion. For example, the region on the pixel array 1100 where the CRA of the incident light is less than 10° may be the central portion of the pixel array 1100. The peripheral portion of the pixel array 1100 may be the region where the CRA of the incident light is greater than 0°, or may be the region where the CRA of the incident light is greater than 10°.

[0100] At first position P1 and second position P2 in the peripheral portion of pixel array 1100, the CRA of incident light can be greater than 0° or greater than 10°. For example, the CRA can vary depending on the distance from the center O of pixel array 1100. Even if two positions on pixel array 1100 are different, when the distances from the center O of pixel array 1100 to these two positions are the same, the CRA at these two positions on pixel array 1100 can be the same. In addition, at first position P1 and second position P2 that are different from each other in the azimuthal direction, the directions of the principal rays of the incident light can be different from each other. For example, the azimuth at first position P1 can be 0°, and the azimuth at second position P2 can be about 45°, that is, between 0° and 90°. The azimuth can be the angle in the counterclockwise direction from a reference line parallel to the first direction (X direction) passing through the center O of pixel array 1100. At first position P1, the direction of the principal ray of the incident light is parallel to the first direction (X direction), and at second position P2, the direction of the principal ray of the incident light is the diagonal direction between the first direction (X direction) and the second direction (Y direction).

[0101] As described above, in the peripheral portion of pixel array 1100, the CRA and the principal ray direction can vary depending on the position. Therefore, in order to make optical quantities such as sensitivity, color separation efficiency, and light utilization efficiency relatively uniform over the entire area of pixel array 1100, the positions of the first color filter to the fourth color filters 121, 122, 123, and 124 of color filter layer 120 and the first metasurface region to the fourth metasurface regions 141, 142, 143, and 144 of nanophotonic lens array 140 can be adjusted considering the CRA and the principal ray direction.

[0102] Figure 11 is a cross-sectional view schematically showing a cross-sectional structure of pixel array 1100 at the central portion of pixel array 1100 according to one or more embodiments. Refer to Figure 11 , in the central portion of pixel array 1100 where the incident light is perpendicularly incident, when viewed in the third direction (Z direction), the boundaries of the corresponding pixels, color filters, and metasurface regions among the plurality of pixels, plurality of color filters, and plurality of metasurface regions can match. For example, in the central portion of pixel array 1100, when viewed from the third direction (Z direction), the boundaries of the corresponding first pixel 111, first color filter 121, and first metasurface region 141 can match. In addition, when viewed from the third direction (Z direction), the boundaries of the corresponding second pixel 112, second color filter 122, and second metasurface region 142 can match.

[0103] When viewed from a third direction (Z direction), the boundaries of the corresponding third pixels 113, third color filters 123, and third metasurfaces 143 can match each other, and the boundaries of the corresponding fourth pixels 114, fourth color filters 124, and fourth metasurfaces 144 can match each other. In Figure 11 "DL" represents the peripheral material layer filled between the nanostructures NP of the nanophotonic lens array 140.

[0104] Figure 12 An example of the relative position between the nanostructures NP of the nanophotonic lens array 140 and the nanopatterns 151h of the antireflection layer 150 in the central portion of the pixel array 1100 according to one or more embodiments is shown. Referring to Figure 12 , in the example, the nanostructures NP of the nanophotonic lens array 140 can be arranged to face and correspond to the nanopatterns 151h of the antireflection layer 150 in the third direction (Z direction). For example, in the central portion of the pixel array 1100 or the central portion of the nanophotonic lens array 140, among the multiple nanostructures NP of the nanophotonic lens array 140 and the multiple nanopatterns 151h of the antireflection layer 150, the corresponding nanostructures and nanopatterns can be aligned with each other in the third direction (Z direction) to match. In this case, the pitch between the nanostructures NP of the nanophotonic lens array 140 can be equal to the pitch between the nanopatterns 151h of the antireflection layer 150. The pitch between the nanostructures NP represents the distance between the centers of two adjacent nanostructures NP, and the pitch between the nanopatterns 151h can represent the distance between the centers of two adjacent nanopatterns 151h. Figure 12 The relative position between the nanostructures NP and the nanopatterns 151h shown is an example, and in another example, the relative position between the nanostructures NP and the nanopatterns 151h can be different from that in Figure 12 , and the pitch between the nanostructures NP and the pitch between the nanopatterns 151h can be different from each other.

[0105] Figure 13 is a cross-sectional view schematically showing the cross-sectional structure of the pixel array 1100 at the peripheral portion of the pixel array 1100 according to one or more embodiments. Referring to Figure 13, in the peripheral portion of the pixel array 1100 where incident light is obliquely incident, the first to fourth color filters 121, 122, 123, and 124 of the color filter layer 120 and the first to fourth metasurface regions 141, 142, 143, and 144 of the nanophotonic lens array 140 may be offset in the light incident direction relative to the corresponding first to fourth pixels 111, 112, 113, and 114. For example, the first to fourth color filters 121, 122, 123, and 124 of the color filter layer 120 and the first to fourth metasurface regions 141, 142, 143, and 144 of the nanophotonic lens array 140 may be offset toward the central portion of the pixel array 1100 relative to the corresponding first to fourth pixels 111, 112, 113, and 114. For example, the first to fourth color filters 121, 122, 123, and 124 of the color filter layer 120 may be offset by a first distance d1 toward the central portion of the pixel array 1100 relative to the corresponding first to fourth pixels 111, 112, 113, and 114, and the first to fourth metasurface regions 141, 142, 143, and 144 of the nanophotonic lens array 140 may be offset by a second distance d2 toward the central portion of the pixel array 1100 relative to the corresponding first to fourth pixels 111, 112, 113, and 114. The second distance d2 (i.e., the offset distance of the first to fourth metasurface regions 141, 142, 143, and 144) may be greater than the first distance d1 (i.e., the offset distance of the first to fourth color filters 121, 122, 123, and 124). Therefore, in the peripheral portion of the pixel array 1100, the boundaries of the corresponding pixels, color filters, and metasurface regions may not match in the third direction (Z direction). The offset distances of the first to fourth color filters 121, 122, 123, and 124 and the first to fourth metasurface regions 141, 142, 143, and 144 may increase as they are farther away from the center of the pixel array 1100.

[0106] The nano-patterns 151h of the anti-reflection layer 150 may also be offset with respect to the first to fourth pixels 111, 112, 113, and 114 in the light incident direction. For example, the plurality of nano-patterns 151h of the anti-reflection layer 150 may be offset toward the central portion of the pixel array 1100 with respect to the first to fourth pixels 111, 112, 113, and 114. The nano-patterns 151h of the anti-reflection layer 150 may be offset by a distance that is almost the same as the offset distance of the first to fourth metasurface regions 141, 142, 143, and 144. For example, the nano-patterns 151h may be offset toward the central portion of the pixel array 1100 by a second distance d2 or a distance that is almost the same as the second distance d2. When the nano-patterns 151h of the anti-reflection layer 150 are not offset, the relative position between the nano-patterns 151h of the anti-reflection layer 150 and the nanostructures NP of the nanophotonic lens array 140 may vary depending on the position on the pixel array 1100.

[0107] Near-field interference may occur between the nano-patterns 151h of the anti-reflection layer 150 and the nanostructures NP of the nanophotonic lens array 140, and the degree of interference may vary depending on the relative position between the nano-patterns 151h of the anti-reflection layer 150 and the nanostructures NP of the nanophotonic lens array 140. Therefore, when the relative position between the nano-patterns 151h of the anti-reflection layer 150 and the nanostructures NP of the nanophotonic lens array 140 varies depending on the position on the pixel array 1100, the degree of interference between the nano-patterns 151h and the nanostructures NP varies depending on the position of the pixel array 1100. Thus, the optical characteristics of the image sensor 1000 may vary depending on the position on the pixel array 1100. Therefore, in the entire region of the pixel array 1100, the entire region of the nanophotonic lens array 140, or the entire region of the anti-reflection layer 150, the relative position between the nano-patterns 151h and the nanostructures NP may be kept constant within a certain range so that the interference between the nano-patterns 151h and the nanostructures NP may be relatively uniform in the entire region of the pixel array 1100, the entire region of the nanophotonic lens array 140, or the entire region of the anti-reflection layer 150.

[0108] Figure 14 An example of the relative position between the nanostructures NP of the nanophotonic lens array 140 and the nano-patterns 151h of the anti-reflection layer 150 at a first position P1 in the peripheral portion of the pixel array 1100 according to one or more embodiments is shown. Refer to Figure 14, the first to fourth color filters 121, 122, 123, and 124 of the color filter layer 120 may be offset by a first distance d1 in a first direction toward the central portion of the pixel array 1100. The first to fourth metasurfaces 141, 142, 143, and 144 of the nanophotonic lens array 140 may be offset by a second distance d2 in the first direction toward the central portion of the pixel array 1100, where the second distance d2 is greater than the first distance d1. In addition, the nanopattern 151h of the antireflection layer 150 may be offset by a third distance d3 in the first direction toward the central portion of the pixel array 1100.

[0109] Figure 14 An example is shown in which the third distance d3 (i.e., the offset distance of the nanopattern 151h) is greater than the second distance d2 (i.e., the offset distances of the first to fourth metasurfaces 141, 142, 143, and 144 of the nanophotonic lens array 140), but the embodiments are not limited thereto. As described above, the relative positions between the nanopattern 151h and the nanostructure NP may be uniform throughout the region of the pixel array 1100, such that the interference between the nanopattern 151h and the nanostructure NP may be uniform throughout the region of the pixel array 1100. To this end, the third distance d3 and the second distance d2 may be equal to each other. In addition, considering the alignment error during the manufacturing process, the third distance d3 and the second distance d2 do not need to be exactly the same as each other, and the third distance d3 may be slightly greater than or less than the second distance d2. For example, Figure 14 it is shown in that the third distance d3 is greater than the second distance d2, but the third distance d3 may be less than the second distance d2. For example, there may be a deviation within a certain range between the third distance d3 and the second distance d2 throughout the region of the pixel array 1100. For example, at a first position P1 with an azimuth angle of 0°, the deviation between the third distance d3 and the second distance d2 in the first direction (X direction) may be within the range of ±1 / 4 of the arrangement period T of the nanopattern 151h. When expressed in a mathematical formula, at the first position P1 with an azimuth angle of 0° on the pixel array 1100, the condition d2 - T / 4 ≤ d3 ≤ d2 + T / 4 in the first direction (X direction) may be satisfied.

[0110] When the second distance d2 and the third distance d3 are equal to each other in the first direction (X direction), in the entire region of the pixel array 1100 or the nanophotonic lens array 140, among the plurality of nanostructures NP of the nanophotonic lens array 140 and the plurality of nanopatterns 151h of the antireflection layer 150, the corresponding nanostructures and nanopatterns can be aligned with each other in the first direction (X direction) to match. For example, in the entire region of the pixel array 1100 or the nanophotonic lens array 140, the distance between the corresponding plurality of nanostructures NP and the plurality of nanopatterns 151h can be 0 (zero) in the first direction (X direction). Here, the distance g between a nanostructure NP and the nanopattern 151h corresponding to or closest to the nanostructure NP can be the interval between the cross-sectional center of the nanostructure NP and the cross-sectional center of the nanopattern 151h on a plane (XY plane) perpendicular to the third direction (Z direction) or on a surface parallel to the upper surface or the lower surface of the nanophotonic lens array 140.

[0111] When the second distance d2 and the third distance d3 have a deviation within the above range, the distance between the corresponding plurality of nanostructures NP and the plurality of nanopatterns 151h can have a deviation within a certain range over the entire region of the pixel array 1100 or the nanophotonic lens array 140. For example, when a nanostructure arranged at a position on the nanophotonic lens array 140 among the plurality of nanostructures NP is referred to as the first nanostructure, and when the nanopattern corresponding to or closest to the first nanostructure among the plurality of nanopatterns 151h is referred to as the first nanopattern, the distance between the first nanostructure and the first nanopattern in the first direction (X direction) can be set to g1. In addition, when a nanostructure different from the first nanostructure among the plurality of nanostructures NP is referred to as the second nanostructure, and when the nanopattern corresponding to or closest to the second nanostructure among the plurality of nanopatterns 151h is referred to as the second nanopattern, the distance between the second nanostructure and the second nanopattern in the first direction (X direction) can be set to g2. Here, since g1 and g2 indicate distances, g1 and g2 can always have values equal to or greater than 0.

[0112] The plurality of nanostructures NP can be included in a repeated metasurface region. For example, corresponding to Figure 2A the unit pixel pattern shown, Figure 6The unit superpattern including the first metasurface region 141, the second metasurface region 142, the third metasurface region 143, and the fourth metasurface region 144 as shown can be arranged repetitively. Accordingly, the nanostructures disposed in the first metasurface region 141, the second metasurface region 142, the third metasurface region 143, and the fourth metasurface region 144 can also be repetitive, and the first nanostructure and the second nanostructure can have a repetitive nanostructure relationship with each other. For example, two nanostructures at relatively the same positions within two metasurface regions of the same type in different regions in the image sensor 1000 among the first metasurface region 141, the second metasurface region 142, the third metasurface region 143, and the fourth metasurface region 144 can be selected as the first nanostructure and the second nanostructure. Hereinafter, the relationship between two nanostructures at relatively the same positions within two metasurface regions of the same type is defined as the repetitive nanostructure relationship. For example, the nanostructure included in the second metasurface region 142 corresponding to the second pixel 112 (e.g., blue pixel) in the unit pixel pattern located at the central portion of the image sensor 1000 can be the first nanostructure, and the nanostructure included in the second metasurface region 142 corresponding to the second pixel 112 (e.g., blue pixel) in the unit pixel pattern located at the peripheral portion of the image sensor 1000 can be the second nanostructure.

[0113] Then, the absolute value of the difference between g1 and g2 (i.e., |g1 - g2| = Δg) can satisfy the condition Δg ≤ T / 4. The deviation Δg can be applied to the entire region on the pixel array 1100 or the nanophotonic lens array 140. For example, for any one of the first nanostructure and the second nanostructure selected from arbitrary different positions of the pixel array 1100 or the nanophotonic lens array 140, the condition Δg ≤ T / 4 can be satisfied. For example, the absolute value Δg of the difference between the distance g1 and the distance g2 can have a value of T / 4 or less, where the distance g1 is the distance between the first nanostructure and the first nanopattern closest to the first nanostructure within any one of the first metasurface region 141, the second metasurface region 142, the third metasurface region 143, and the fourth metasurface region at the left edge portion of the image sensor 1000, the pixel array 1100, or the nanophotonic lens array 140, and the distance g2 is the distance between the second nanostructure and the second nanopattern closest to the second nanostructure within the metasurface region of the same type as the metasurface region to which the first nanostructure belongs at the right edge portion of the image sensor 1000, the pixel array 1100, or the nanophotonic lens array 140.

[0114] When the first nanostructure is disposed in the central portion of the nanophotonic lens array 140, the first nanostructure and the first nanopattern can be aligned with each other to match as shown in Figure 12 (i.e., g1 = 0). In addition, when the second nanostructure is disposed in the peripheral portion of the nanophotonic lens array 140, the second nanostructure can be aligned with the second nanopattern to match, or as shown in Figure 14 they can be offset from each other. When the second nanostructure and the second nanopattern are offset from each other, the distance g2 between the second nanostructure and the second nanopattern in the first direction (X direction) can be up to T / 4 (i.e., 0 ≤ g2 ≤ T / 4).

[0115] When the second distance d2 and the third distance d3 are equal to each other throughout the entire region of the pixel array 1100 or the nanophotonic lens array 140, there can be no deviation in the distance between the plurality of nanostructures NP and the plurality of nanopatterns 151h corresponding to each other. In this case, throughout the entire region of the pixel array 1100 or the nanophotonic lens array 140, Δg can be 0. In the peripheral portion of the nanophotonic lens array 140, the second distance d2 and the third distance d3 can have a deviation within the above range. In this case, when the first nanostructure is disposed in the central portion of the nanophotonic lens array 140 and the second nanostructure is disposed in the peripheral portion of the nanophotonic lens array 140, g1 and g2 can have different values within the above range (i.e., 0 ≤ g1 ≤ T / 4, 0 ≤ g2 ≤ T / 4).

[0116] In Figure 14 a first position P1 with an azimuth angle of 0° in the peripheral portion of the pixel array 1100 is described, but this description can also be applied to a position with an azimuth angle of 90° in the peripheral portion of the pixel array 1100, and only the directions are different. For example, at a point with an azimuth angle of 90° in the peripheral portion of the pixel array 1100, the deviation between the third distance d3 and the second distance d2 can be determined based on the second direction (Y direction). For example, at a point with an azimuth angle of 90° in the pixel array 1100, the deviation between the third distance d3 and the second distance d2 in the second direction (Y direction) can be within ±1 / 4 of the arrangement period T of the nanopattern 151h. For example, at a point with an azimuth angle of 90° in the peripheral portion of the pixel array 1100, the condition d2 - T / 4 ≤ d3 ≤ d2 + T / 4 in the second direction can be satisfied. Similarly, at a point with an azimuth angle of 90° in the pixel array 1100, the condition Δg ≤ T / 4 in the second direction (Y direction) can be satisfied.

[0117] Figure 15Shows an example of the relative position between the nanostructure NP of the nanophotonic lens array 140 and the nanopattern 151h of the antireflection layer 150 at the second position P2 in the peripheral portion of the pixel array 1100 according to one or more embodiments. Refer to Figure 15 , at the second position P2 in the peripheral portion of the pixel array 1100, the first color filter to the fourth color filter 121, 122, 123, and 124 of the color filter layer 120 are offset by a first distance d1 in the diagonal direction toward the central portion of the pixel array 1100, and the first metasurface region to the fourth metasurface region 141, 142, 143, and 144 of the nanophotonic lens array 140 may be offset by a second distance d2 in the diagonal direction toward the central portion of the pixel array 1100. In addition, the nanopattern 151h of the antireflection layer 150 may be offset by a third distance d3 in the diagonal direction toward the central portion of the pixel array 1100.

[0118] Except that the offset direction at the second position P2 different from the first position P1 in the peripheral portion of the pixel array 1100 is the diagonal direction, the description of the offset distance provided above with reference to Figure 14 can be equally applied to the second position P2. For example, at the second position P2 where the azimuth angle is greater than 0° and less than 90°, the deviation between the offset distance of the nanopattern 151h and the offset distances of the first metasurface region to the fourth metasurface region 141, 142, 143, and 144 of the nanophotonic lens array 140, and the deviation Δg regarding the relative position between the nanopattern 151h and the nanostructure NP can be determined in the diagonal direction toward the central portion of the pixel array 1100. For example, in the diagonal direction toward the central portion of the pixel array 1100, the condition d2 - T / 4 ≤ d3 ≤ d2 + T / 4 can be satisfied. In addition, in the diagonal direction toward the central portion of the pixel array 1100, the condition Δg ≤ T / 4 can be satisfied.

[0119] When the first metasurface region to the fourth metasurface region 141, 142, 143, and 144 of the nanophotonic lens array 140 and the nanopattern 151h of the antireflection layer 150 are offset in the diagonal direction toward the central portion of the pixel array 1100, aspects of the first direction (X direction) and the second direction (Y direction) can be considered. For example, the first metasurface region to the fourth metasurface region 141, 142, 143, and 144 of the nanophotonic lens array 140 may be offset by a second x distance d2 in the first direction x and by a second y distance d2 in the second direction y . The nanopattern 151h of the antireflection layer 150 may be offset by a third x distance d3 in the first direction x and by a third y distance d3 in the second direction y. In this case, the second distance d2 in the diagonal direction can be the square root of the sum of the square of the second x-distance d2 x and the square of the second y-distance d2 y . And the third distance d3 in the diagonal direction can be the square root of the sum of the square of the third x-distance d3 x and the square of the third y-distance d3 y . The second x-distance d2 x and the third x-distance d3 x in the first direction, as well as the second y-distance d2 y and the third y-distance d3 y in the second direction can be within the range that satisfies the condition d2 - T / 4 ≤ d3 ≤ d2 + T / 4 in the diagonal direction.

[0120] In addition, the distance g between a nanostructure NP and the nanopattern 151h corresponding to or closest to the nanostructure in the diagonal direction can be the square root of the sum of the square of the distance g x in the first direction and the square of the distance g y in the second direction. The deviation Δg x of the relative position between the nanopattern 151h and the nanostructure NP in the first direction, as well as the deviation Δg y of the relative position between the nanopattern 151h and the nanostructure NP in the second direction can be within the range that satisfies the condition Δg ≤ T / 4 in the diagonal direction.

[0121] In the entire region of the pixel array 1100, the deviation between the third distance d3 and the second distance d2 in the direction towards the central portion of the pixel array 1100 can be within ±1 / 4 of the arrangement period T of the nanopattern 151h in the first to fourth metasurface regions 141, 142, 143, and 144 of the nanophotonic lens array 140 and in the direction in which the nanopattern 151h of the antireflection layer 150 is shifted. According to one or more other embodiments, in the entire region of the pixel array 1100, in the direction in which the nanopattern 151h of the antireflection layer 150 is shifted in the first to fourth metasurface regions 141, 142, 143, and 144 of the nanophotonic lens array 140 or in the direction towards the central portion of the pixel array 1100, the condition d2 - T / 4 ≤ d3 ≤ d2 + T / 4 can be satisfied. In addition, in the entire region of the pixel array 1100, in the direction in which the nanopattern 151h of the antireflection layer 150 is shifted in the first to fourth metasurface regions 141, 142, 143, and 144 of the nanophotonic lens array 140 or in the direction towards the center of the pixel array 1100, the condition Δg ≤ T / 4 can be satisfied.

[0122] Based on the central portion and the peripheral portion of the pixel array 1100, the positions of the first color filter to the fourth color filter 121, 122, 123, and 124 of the color filter layer 120, the positions of the first metasurface region to the fourth metasurface region 141, 142, 143, and 144 of the nanophotonic lens array 140, and the position of the nanopattern 151h of the antireflection layer 150 are described. The central portion of the pixel array 1100 may be matched with the central portion of the color filter layer 120, the central portion of the nanophotonic lens array 140, and the central portion of the antireflection layer 150 in the third direction (Z direction). Therefore, the same description can also be applied to the central portion and the peripheral portion of the color filter layer 120, the central portion and the peripheral portion of the nanophotonic lens array 140, and the central portion and the peripheral portion of the antireflection layer 150. For example, the above description of the positions of the first color filter to the fourth color filter 121, 122, 123, and 124 of the color filter layer 120, the positions of the first metasurface region to the fourth metasurface region 141, 142, 143, and 144 of the nanophotonic lens array 140, and the nanopattern 151h of the antireflection layer 150 in the central portion of the pixel array 1100 can be equally applied to the central portion of the color filter layer 120, the central portion of the nanophotonic lens array 140, and the central portion of the antireflection layer 150. In addition, the above description of the positions of the first color filter to the fourth color filter 121, 122, 123, and 124 of the color filter layer 120, the positions of the first metasurface region to the fourth metasurface region 141, 142, 143, and 144 of the nanophotonic lens array 140, and the nanopattern 151h of the antireflection layer 150 in the peripheral portion of the pixel array 1100 can be equally applied to the peripheral portion of the color filter layer 120, the peripheral portion of the nanophotonic lens array 140, and the peripheral portion of the antireflection layer 150. Similarly, the description of the relative position between the nanostructure NP of the nanophotonic lens array 140 and the nanopattern 151h of the antireflection layer 150 in the entire region of the pixel array 1100 can be equally applied to the entire region of the nanophotonic lens array 140 and the entire region of the antireflection layer 150.

[0123] Figure 16 An example of the relative position between the nanostructure NP of the nanophotonic lens array 140 and the nanopattern 151h of the antireflection layer 150 in the central portion of the pixel array 1100 according to one or more other embodiments is shown. Figures 12 to 15 An example in which the nanostructure NP of the nanophotonic lens array 140 and the nanopattern 151h of the antireflection layer 150 face each other in the third direction (Z direction) is shown. However, the relative position between the nanostructure NP of the nanophotonic lens array 140 and the nanopattern 151h of the antireflection layer 150 is not limited to the above example. Refer to Figure 16, when viewed along the third direction (Z direction), a plurality of nano-patterns 151h may be arranged between the plurality of nano-structures NP. For example, when viewed along the third direction (Z direction), the plurality of nano-structures NP may be arranged between the plurality of nano-patterns 151h. For example, when viewed along the third direction (Z direction), the plurality of nano-patterns 151h and the plurality of nano-structures NP may be alternately arranged such that the plurality of nano-patterns 151h and the plurality of nano-structures NP do not overlap with each other. For example, each of the plurality of nano-patterns 151h arranged in the central portion of the pixel array 1100 or the central portion of the nano-photonic lens array 140 may be located at the same distance from the four adjacent nano-structures NP. In this case, in the central portion of the pixel array 1100 or the central portion of the nano-photonic lens array 140, the distance g1 in the first direction or the second direction between each nano-pattern of the plurality of nano-patterns 151h and the nano-structure NP closest to the nano-pattern may be g1 = T / 2.

[0124] Figure 17 An example of the relative position between the nano-structure NP of the nano-photonic lens array 140 and the nano-pattern 151h of the anti-reflection layer 150 at the first position P1 in the peripheral portion of the pixel array 1100 according to one or more other embodiments is shown, and Figure 18 An example of the relative position between the nano-structure NP of the nano-photonic lens array 140 and the nano-pattern 151h of the anti-reflection layer 150 at the second position P2 in the peripheral portion of the pixel array 1100 according to one or more other embodiments is shown. Refer to Figure 17 and Figure 18 , at the first position P1 and the second position P2 in the peripheral portion of the pixel array 1100, the first color filter to the fourth color filters 121, 122, 123, and 124 of the color filter layer 120, the first metasurface region to the fourth metasurface regions 141, 142, 143, and 144 of the nano-photonic lens array 140, and the nano-patterns 151h of the anti-reflection layer 150 may be offset toward the central portion of the pixel array 1100. As referred to above with reference to Figure 14 and Figure 15 described, the offset distance of the nano-patterns 151h of the anti-reflection layer 150 may be the same as the offset distance of the first metasurface region to the fourth metasurface regions 141, 142, 143, and 144 of the nano-photonic lens array 140 in the offset direction, or may be different within ±1 / 4 of the arrangement period T of the nano-patterns 151h in the offset direction.

[0125] Based on the fact that the relative positions between the nano-patterns 151h and the nanostructures NP remain almost the same within a certain range in the entire region including the central part and the peripheral part of the pixel array 1100, the arrangement types of the plurality of nano-patterns 151h and the arrangement types of the plurality of nanostructures NP can be configured independently of each other. For example, regardless of the arrangement types of the plurality of nano-patterns 151h and the plurality of nanostructures NP, the deviation Δg of the relative position between the nano-patterns 151h and the nanostructures NP in the peripheral part of the pixel array 1100 with respect to the relative position between the nano-patterns 151h and the nanostructures NP in the central part of the pixel array 1100 can satisfy the condition Δg ≤ T / 4.

[0126] Figure 19 is a cross-sectional view schematically showing a cross-sectional structure of a pixel array in a central part of a pixel array according to one or more other embodiments. Refer to Figure 19 , a pixel array 1100a according to one or more other embodiments may include a sensor substrate 110, a color filter layer 120, a planarization layer 130, a nano-photonic lens array 140', and an anti-reflection layer 150. The nano-photonic lens array 140' may include nanostructures of a bilayer structure. For example, each of the plurality of nanostructures of the nano-photonic lens array 140' may include a first nanostructure layer NP1 and a second nanostructure layer NP2 provided on the first nanostructure layer NP1. The plurality of first nanostructure layers NP1 and the plurality of second nanostructure layers NP2 may have the same arrangement, but may also have different arrangements in consideration of the color separation efficiency and sensitivity according to the CRA. Figure 19 Other structures in the pixel array 1100a shown may be the same as the other structures of the above pixel array 1100.

[0127] According to one or more embodiments, when the nano-photonic lens array 140' includes two or more layers of nanostructures, based on the nanostructures directly under the nano-patterns 151h provided in the anti-reflection layer 150, the relative positions between the nano-patterns 151h and the nanostructures can remain constant over the entire region of the pixel array 1100a. For example, when the nanostructures are arranged in a bilayer structure, the relative position between the nano-patterns 151h and the second nanostructure layer NP2 can remain constant within a certain range over the entire region of the pixel array 1100a. In addition, when the nanostructures are arranged in a three-layer structure including a third nanostructure layer provided on the second nanostructure layer NP2, the relative position between the nanostructures NP and the third nanostructure layer can remain constant within a certain range over the entire region of the pixel array 1100a.

[0128] Figure 20is a cross-sectional view schematically showing a cross-sectional structure of the pixel array 1100a in a peripheral portion of the pixel array 1100a according to one or more other embodiments. Refer to Figure 20 , the offset distances of the first color filter to the fourth color filter 121, 122, 123, and 124 of the color filter layer 120 are the same as the above description. The offset distance of the nanostructure layer NP1 may be the same as the offset distances of the first metasurface region to the fourth metasurface region 141, 142, 143, and 144 described above. Compared with the first nanostructure layer NP1, the second nanostructure layer NP2 may be further offset by a fourth distance d4 toward the central portion of the pixel array 1100a. The deviation Δg of the relative position between the nanopattern 151h and the second nanostructure layer NP2 in the peripheral portion of the pixel array 1100a with respect to the relative position between the nanopattern 151h and the second nanostructure layer NP2 in the central portion of the pixel array 1100a may be within the range of ±1 / 4 of the arrangement period T of the nanopattern 151h. For example, the deviation Δg of the relative position between the nanopattern 151h and the second nanostructure layer NP2 in the peripheral portion of the pixel array 1100a with respect to the relative position between the nanopattern 151h and the second nanostructure layer NP2 in the central portion of the pixel array 1100a may satisfy the condition Δg≤T / 4.

[0129] In the entire region of the pixel array 1100a or the entire region of the nanophotonic lens array 140, the deviation Δg may satisfy the condition Δg≤T / 4. For example, when a nanostructure arranged at a position in the nanophotonic lens array 140 among the plurality of nanostructures NP is referred to as a first nanostructure, and when a nanopattern among the plurality of nanopatterns 151h corresponding to or closest to the first nanostructure is referred to as a first nanopattern, the distance between the second nanostructure layer NP2 of the first nanostructure and the first nanopattern may be set to g1. In addition, when a nanostructure different from the first nanostructure among the plurality of nanostructures NP is referred to as a second nanostructure, and when a nanopattern among the plurality of nanopatterns 151h corresponding to or closest to the second nanostructure is referred to as a second nanopattern, the distance between the second nanostructure layer NP2 of the second nanostructure and the second nanopattern may be set to g2. Then, in the entire region of the pixel array 1100a or the entire region of the nanophotonic lens array 140, the absolute value of the difference between g1 and g2 (i.e., |g1 - g2| = Δg) may satisfy the condition Δg≤T / 4.

[0130] Figure 21 is a cross-sectional view schematically showing a cross-sectional structure of the pixel array 1100b in a central portion of the pixel array according to one or more other embodiments. Refer to Figure 21, according to one or more other embodiments, the pixel array 1100b may include a sensor substrate 110, a color filter layer 120, a planarization layer 130, a nanophotonic lens array 140, and an antireflection layer 150'. In Figure 21 the pixel array 1100b, the other structures except the antireflection layer 150' may be the same as the other structures of the above pixel array 1100.

[0131] The antireflection layer 150' may include a first antireflection layer 150a and a second antireflection layer 150b disposed on the first antireflection layer 150a. The first antireflection layer 150a may have a thin film structure that is continuously disposed to a constant thickness in a third direction (Z direction) on the upper surface of the nanophotonic lens array 140. For example, the first antireflection layer 150a may have an unpatterned thin film structure. Similar to the above antireflection layer 150, the second antireflection layer 150b may include a dielectric layer 151 and a plurality of patterned nanopatterns 151h.

[0132] The first antireflection layer 150a may include a transparent dielectric material having a higher refractive index than the second antireflection layer 150b. For example, the first antireflection layer 150a includes at least one dielectric material of AlO, SiN, and HfO, and the dielectric layer 151 of the second antireflection layer 150b may include SiO2 or AlON. The first antireflection layer 150a may have a thickness of about 5 nm to about 50 nm. According to one or more embodiments, the effective refractive index of the nanophotonic lens array 140, the effective refractive index of the first antireflection layer 150a, and the effective refractive index of the second antireflection layer 150b may decrease in sequence. For example, among the nanophotonic lens array 140, the first antireflection layer 150a, and the second antireflection layer 150b, the effective refractive index of the nanophotonic lens array 140 is the largest, and the effective refractive index of the second antireflection layer 150b may be the smallest. In addition, during the etching process of the plurality of nanopatterns 151h for forming the second antireflection layer 150b, the first antireflection layer 150a may act as an etch stop layer to protect the nanophotonic lens array 140 from being etched.

[0133] In the antireflection layer 150' having a bilayer structure including the first antireflection layer 150a and the second antireflection layer 150b, the relative position between the nanopatterns 151h of the second antireflection layer 150b and the nanostructures NP of the nanophotonic lens array 140 may be kept constant within a certain range over the entire region of the pixel array 1100b.

[0134] In an image sensor 1000 according to one or more embodiments, the nanophotonic lens array 140 can perform color separation on incident light without absorbing or reflecting the incident light, and then focus the color-separated light onto each of a plurality of pixels. Therefore, the light utilization efficiency can be improved, and a decrease in resolution can be reduced. In addition, by reducing the reflection loss of light due to the antireflection layers 150 and 150', the light utilization efficiency of the image sensor 1000 can be further improved, and the optical characteristics can be kept consistent over the entire area of the image sensor 1000 or over the entire area of the pixel arrays 1100, 1100a, or 1100b. Therefore, the size of one pixel of the image sensor 1000 or the size of the independent photosensitive units in the pixel can be reduced, and thus an image sensor 1000 with a higher resolution can be provided. The image sensor 1000 according to one or more embodiments can form a camera module together with module lenses having various functions, and can be used in various electronic devices.

[0135] Figure 22 is a block diagram showing an example of an electronic device ED01 including the image sensor 1000. Refer to Figure 22 , in a network environment ED00, the electronic device ED01 can communicate with another electronic device ED02 via a first network ED98 (such as a short-range wireless communication network), or can communicate with another electronic device ED04 and / or a server ED08 via a second network ED99 (such as a long-range wireless communication network). The electronic device ED01 can communicate with the electronic device ED04 via the server ED08. The electronic device ED01 can include a processor ED20, a memory ED30, an input device ED50, a sound output device ED55, a display device ED60, an audio module ED70, a sensor module ED76, an interface ED77, a haptic module ED79, a camera module ED80, a power management module ED88, a battery ED89, a communication module ED90, a subscriber identification module ED96, and / or an antenna module ED97. In the electronic device ED01, some of the elements (such as the display device ED60, etc.) can be omitted, or another element can be added. Some elements can be configured as an integrated circuit. For example, the sensor module ED76 (fingerprint sensor, iris sensor, illuminance sensor, etc.) can be embedded and implemented in the display device ED60 (display, etc.).

[0136] The processor ED20 can control one or more components (hardware, software components, etc.) of the electronic device ED01 connected to the processor ED20 by executing software (such as program ED40), and can perform various data processing or operations. As part of the data processing or operations, the processor ED20 can load commands and / or data received from another component (such as the sensor module ED76, communication module ED90) into the volatile memory ED32, process the commands and / or data stored in the volatile memory ED32, and store the result data in the non-volatile memory ED34. The non-volatile memory ED34 can include an internal memory ED36 and an external memory ED38. The processor ED20 can include a main processor ED21 (central processing unit, application processor, etc.) and a co-processor ED23 (graphics processing unit, image signal processor, sensor hub processor, communication processor, etc.), and the co-processor ED23 can operate independently of the main processor ED21 or operate together with the main processor ED21. The co-processor ED23 can use less power than the main processor ED21 and can perform specified functions.

[0137] The co-processor ED23 can control functions and / or states related to some components (such as the display device ED60, sensor module ED76, communication module ED90) in the electronic device ED01 on behalf of the main processor ED21 when the main processor ED21 is in an inactive state (sleep state) or together with the main processor ED21 when the main processor ED21 is in an active state (application execution state). The co-processor ED23 (such as an image signal processor, communication processor) can be implemented as part of another component (such as the camera module ED80, communication module ED90) related to it functionally.

[0138] The memory ED30 can store various data required by components (such as the processor ED20, sensor module ED76) of the electronic device ED01. This data can include, for example, input data and / or output data regarding software (such as program ED40) and commands related to the software. The memory ED30 can include a volatile memory ED32 and / or a non-volatile memory ED34.

[0139] The program ED40 can be stored in the memory ED30 as software and can include an operating system ED42, middleware ED44, and / or an application ED46.

[0140] The input device ED50 can receive commands and / or data to be used in components (such as the processor ED20) of the electronic device ED01 from outside the electronic device ED01 (such as a user). The input device ED50 can include a microphone, a mouse, a keyboard, and / or a digital pen (stylus).

[0141] The sound output device ED55 can output a sound signal to the outside of the electronic device ED01. The sound output device ED55 can include a speaker and / or a receiver. The speaker can be used for general purposes such as multimedia reproduction or recording playback, and the receiver can be used to receive incoming calls. The receiver can be coupled as part of the speaker or can be implemented as an independent device.

[0142] The display device ED60 can provide visual information to the outside of the electronic device ED01. The display device ED60 can include a display, a holographic device, or a projector, and a control circuit for controlling the corresponding device. The display device ED60 can include a touch circuit set to sense a touch and / or a sensor circuit (such as a pressure sensor) set to measure the intensity of the force generated by the touch.

[0143] The audio module ED70 can convert sound into an electrical signal and vice versa. The audio module ED70 can obtain sound through the input device ED50, or can output sound via the sound output device ED55 and / or the speaker and / or headphones of another electronic device (such as the electronic device ED02) directly or wirelessly connected to the electronic device ED01.

[0144] The sensor module ED76 can sense the operating state (power, temperature, etc.) of the electronic device ED01 or the external environmental state (user state, etc.), and can generate an electrical signal and / or a data value corresponding to the sensed state. The sensor module ED76 can include a gesture sensor, a gyro sensor, a pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an infrared (IR) ray sensor, a biometric sensor, a temperature sensor, a humidity sensor, and / or an illuminance sensor.

[0145] The interface ED77 can support one or more specified protocols, which can be used to directly or wirelessly connect the electronic device ED01 to another electronic device (such as the electronic device ED02). The interface ED77 can include a high-definition multimedia interface (HDMI), a universal serial bus (USB) interface, an SD card interface, and / or an audio interface.

[0146] The connection terminal ED78 can include a connector through which the electronic device ED01 can be physically connected to another electronic device (such as the electronic device ED02). The connection terminal ED78 can include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (such as a headphone connector).

[0147] The tactile module ED79 can convert an electrical signal into a mechanical stimulus (vibration, movement, etc.) or an electrical stimulus that a user can sense through touch or kinesthesia. The tactile module ED79 can include an electric motor, a piezoelectric device, and / or an electrical stimulation device.

[0148] The camera module ED80 can capture still images and videos. The camera module ED80 can include a lens assembly having one or more lenses, Figure 1 an image sensor 1000, an image signal processor, and / or a flash. The lens assembly included in the camera module ED80 can collect light emitted from an object that is an object to be captured.

[0149] The power management module ED88 can manage the power supplied to the electronic device ED01. The power management module ED88 can be implemented as part of a power management integrated circuit (PMIC).

[0150] The battery ED89 can supply power to the components of the electronic device ED01. The battery ED89 can include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell unit.

[0151] The communication module ED90 can support establishing a direct (wired) communication channel and / or a wireless communication channel between the electronic device ED01 and another electronic device (electronic device ED02, electronic device ED04, server ED08, etc.) and performing communication through the established communication channel. The communication module ED90 can operate independently of the processor ED20 (application processor, etc.) and can include one or more communication processors that support direct communication and / or wireless communication. The communication module ED90 can include a wireless communication module ED92 (cellular communication module, short-range wireless communication module, global navigation satellite system (GNSS) communication module) and / or a wired communication module ED94 (local area network (LAN) communication module, power line communication module, etc.). Among these communication modules, the corresponding communication module can communicate with another electronic device via a first network ED98 (a short-range communication network such as Bluetooth, WiFi Direct, or Infrared Data Association (IrDA)) or a second network ED99 (a long-range communication network such as a cellular network, the Internet, or a computer network (LAN, WAN, etc.)). Such various communication modules described above can be integrated into one element (a single chip, etc.) or can be implemented as multiple separate elements (multiple chips). The wireless communication module ED92 can identify and authenticate the electronic device ED01 in a communication network such as the first network ED98 and / or the second network ED99 by using the subscriber information (international mobile subscriber identifier (IMSI), etc.) stored in the subscriber identification module ED96.

[0152] The antenna module ED97 can transmit signals and / or power to the outside (another electronic device, etc.) or receive signals and / or power from the outside (another electronic device, etc.). The antenna can include a radiator formed as a conductive pattern formed on a substrate (such as a PCB). The antenna module ED97 can include one or more antennas. When the antenna module ED97 includes multiple antennas, among these multiple antennas, the communication module ED90 can select an antenna suitable for the communication type used in a communication network such as the first network ED98 and / or the second network ED99. Signals and / or power can be transmitted between the communication module ED90 and another electronic device via the selected antenna. Another component (such as an RFIC) other than the antenna can be included as part of the antenna module ED97.

[0153] Some components can be connected to each other via a communication method between peripheral devices (such as a bus, general-purpose input and output (GPIO), serial peripheral interface (SPI), mobile industry processor interface (MIPI), etc.) and can exchange signals (commands, data, etc.).

[0154] Commands or data can be sent or received between the electronic device ED01 and an external electronic device ED04 via a server ED08 connected to the second network ED99. The other electronic devices ED02 and ED04 can be devices of the same or different types as the electronic device ED01. All or some of the operations performed in the electronic device ED01 can be performed in one or more of the other electronic devices ED02, ED04, and ED08. For example, when the electronic device ED01 has to perform a specific function or service, the electronic device ED01 can request one or more other electronic devices to perform all or some of the function or service instead of performing the function or service by itself. The one or more electronic devices that receive the request perform additional functions or services related to the request and can transmit the execution results to the electronic device ED01. For this purpose, for example, cloud computing, distributed computing, or client-server computing technologies can be used.

[0155] Figure 23 is a block diagram showing an example of the camera module ED80 included in the Figure 22 electronic device ED01. Refer to Figure 23, the camera module ED80 may include a lens assembly 1110, a flash 1120, an image sensor 1000, an image stabilizer 1140, a memory 1150 (such as a buffer memory), and / or an image signal processor 1160. The lens assembly 1110 may collect light emitted from an object to be captured. The camera module ED80 may include a plurality of lens assemblies 1110, and in this case, the camera module ED80 may include a dual camera module, a 360-degree camera, or a spherical camera. Some of the plurality of lens assemblies 1110 may have the same lens properties (angle of view, focal length, autofocus, F-number, optical zoom, etc.) or different lens properties. The lens assembly 1110 may include a wide-angle lens or a telephoto lens.

[0156] The flash 1120 may emit light for enhancing the light emitted or reflected from the object. The flash 1120 may emit visible light or infrared light. The flash 1120 may include one or more light-emitting diodes (red-green-blue (RGB) LEDs, white LEDs, infrared LEDs, ultraviolet LEDs, etc.) and / or a xenon lamp. The image sensor 1000 may be the image sensor described above with reference to Figure 1 and convert the light emitted or reflected from the object and transmitted through the lens assembly 1110 into an electrical signal to obtain an image corresponding to the object.

[0157] In response to the movement of the camera module ED80 or the electronic device ED01 including the camera module ED80, the image stabilizer 1140 moves one or more lenses included in the lens assembly 1110 or the image sensor 1000 in a specific direction, or controls the operating characteristics (such as adjusting the readout timing) of the image sensor 1000 to compensate for the negative impact of the movement. The image stabilizer 1140 may sense the movement of the camera module ED80 or the electronic device ED01 by using a gyro sensor (not shown) or an acceleration sensor (not shown) provided inside or outside the camera module ED80. The image stabilizer 1140 may be implemented as an optical type.

[0158] The memory 1150 may store some or all of the data of the image obtained by the image sensor 1000 for subsequent image processing operations. For example, when a plurality of images are obtained at high speed, the obtained raw data (Bayer pattern data, high-resolution data, etc.) is stored in the memory 1150, and only a low-resolution image is displayed. Then, the raw data of the selected image (such as user selection) may be transmitted to the image signal processor 1160. The memory 1150 may be integrated with the memory ED30 of the electronic device ED01, or may include an additional memory that operates independently.

[0159] The image signal processor 1160 may perform image processing on an image obtained through the image sensor 1000 or image data stored in the memory 1150. The image processing may include depth map generation, three-dimensional modeling, panoramic generation, feature extraction, image combination, and / or image compensation (noise reduction, resolution adjustment, brightness adjustment, blurring, sharpening, softening, etc.). The image signal processor 1160 may control elements (such as the image sensor 1000) included in the camera module ED80 (exposure time control, readout timing control, etc.).

[0160] The image processed by the image signal processor 1160 may be stored again in the memory 1150 for additional processing, or may be provided to external elements of the camera module ED80 (e.g., the memory ED30, the display device ED60, the electronic device ED02, the electronic device ED04, the server ED08, etc.). The image signal processor 1160 may be integrated with the processor ED20, or may be configured as an additional processor that operates independently of the processor ED20. When the image signal processor 1160 is configured as an additional processor separate from the processor ED20, the image processed by the image signal processor 1160 undergoes additional image processing via the processor ED20 and may then be displayed on the display device ED60.

[0161] In addition, the image signal processor 1160 may independently receive two output signals from adjacent photosensitive units in each pixel or sub-pixel of the image sensor 1000, and may generate an autofocus signal based on the difference between the two output signals. The image signal processor 1160 may control the lens assembly 1110 such that the focus of the lens assembly 1110 can be accurately formed on the surface of the image sensor 1000 based on the autofocus signal.

[0162] The electronic device ED01 may also include one or more camera modules having different properties or functions. The camera module may include elements similar to the camera module ED80 of Figure 23 and the image sensor included in the camera module may be implemented as a CCD sensor and / or a CMOS sensor, and may include one or more sensors selected from image sensors having different properties, such as an RGB sensor, a black and white (BW) sensor, an IR sensor, or a UV sensor. In this case, one of the multiple camera modules ED80 may include a wide-angle camera, and another camera module ED80 may include a telephoto camera. Similarly, one of the multiple camera modules ED80 may include a front camera, and another camera module ED80 may include a rear camera.

[0163] Figure 24 is a block diagram of the electronic device 1200 including multiple camera modules, and Figure 25 isFigure 24 A detailed block diagram of a camera module in the shown electronic device.

[0164] Reference Figure 24 , the electronic device 1200 may include a camera module group 1300, an application processor 1400, a power management integrated circuit (PMIC) 1500, an external memory 1600, and an image generator 1700.

[0165] The camera module group 1300 may include multiple camera modules 1300a, 1300b, and 1300c. Although the drawings show an example of arranging three camera modules 1300a, 1300b, and 1300c, one or more embodiments are not limited thereto. In some embodiments, the camera module group 1300 may be modified to include only two camera modules. In addition, in some embodiments, the camera module group 1300 may be modified to include n (n is a natural number of 4 or greater) camera modules.

[0166] Hereinafter, a detailed configuration of one camera module 1300b will be described in detail with reference to Figure 25 , but according to one or more embodiments, the description provided below may also be applied to other camera modules 1300a and 1300c.

[0167] Reference Figure 25 , the camera module 1300b may include a prism 1305, an optical path folding element (OPFE) 1310, an actuator 1330, an image sensing device 1340, and a storage unit 1350.

[0168] The prism 1305 may include a reflecting surface 1307 having a light reflecting material, and may deform the path of light L incident from the outside.

[0169] In some embodiments, the prism 1305 may change the path of light L incident in a first direction (X direction) to a second direction (Y direction) perpendicular to the first direction (X direction). In addition, the prism 1305 may rotate the reflecting surface 1307 having a light reflecting material about a central axis 1306 in direction A or in direction B about the central axis 1306, so that the path of light L incident in the first direction (X direction) can be changed to a second direction (Y direction) perpendicular to the first direction (X direction). Here, the OPFE 1310 may also move in a third direction (Z direction) perpendicular to the first direction (X direction) and the second direction (Y direction).

[0170] In some embodiments, as shown in the drawings, the maximum rotation angle of the prism 1305 in direction A is 15° or less in the positive A direction, and greater than 15° in the negative A direction, but one or more embodiments are not limited thereto.

[0171] In some embodiments, the prism 1305 may be moved by about 20° in the positive B direction or the negative B direction, or at an angle between 10° and 20° or between 15° and 20°. Here, the moving angle is the same in the positive B direction or the negative B direction, or may be similar within a range of about 1°.

[0172] In some embodiments, the prism 1305 may move the reflecting surface 1307 having a light reflecting material in a third direction (e.g., the Z direction) parallel to the direction in which the central axis 1306 extends.

[0173] The OPFE 1310 may include, for example, optical lenses formed into m groups (where m is a natural number). Here, the m lenses move in the second direction (Y direction), and the optical zoom ratio of the camera module 1300b may be changed. For example, when the basic optical zoom ratio of the camera module 1300b is Z and the m optical lenses included in the OPFE 1310 move, the optical zoom ratio of the camera module 1300b may be changed to 3Z, 5Z, or 10Z or greater.

[0174] The actuator 1330 may move the OPFE 1310 or the optical lens (hereinafter referred to as the optical lens) to a specific position. For example, the actuator 1330 may adjust the position of the optical lens so that the image sensor 1342 may be located at the focal length of the optical lens for an accurate sensing operation.

[0175] The image sensing device 1340 may include an image sensor 1342, control logic 1344, and a memory 1346. The image sensor 1342 may sense an image of a sensing target by using the light L provided via the optical lens. The control logic 1344 may control the overall operation of the camera module 1300b. For example, the control logic 1344 may control the operation of the camera module 1300b according to a control signal provided through the control signal line CSLb.

[0176] For example, the image sensor 1342 may include the above-described nanophotonic lens array or color separation lens array. By using the nanostructure-based color separation lens array, the image sensor 1342 may receive more signals separated according to wavelengths in each pixel. Due to the above effects, the light intensity required to generate a high-quality image with high resolution under low illumination can be ensured.

[0177] The memory 1346 may store information required for the operation of the camera module 1300b, such as calibration data 1347. The calibration data 1347 may include information required to generate image data by using the light L provided from the outside via the camera module 1300b. The calibration data 1347 may include, for example, information about the above-mentioned degree of rotation, information about the focal length, information about the optical axis, and the like. When the camera module 1300b is implemented in the form of a multi-state camera (whose focal length changes according to the position of the optical lens), the calibration data 1347 may include information related to the focal length value of the optical lens and autofocus according to each position (or state).

[0178] The storage unit 1350 may store the image data sensed by the image sensor 1342. The storage unit 1350 may be disposed outside the image sensing device 1340 and may be stacked with the sensor chip included in the image sensing device 1340. In some embodiments, the storage unit 1350 may be implemented as an electrically erasable programmable read-only memory (EEPROM), but one or more embodiments are not limited thereto.

[0179] Reference Figure 24 and Figure 25 In some embodiments, each of the plurality of camera modules 1300a, 1300b, and 1300c may include an actuator 1330. Accordingly, each of the plurality of camera modules 1300a, 1300b, and 1300c may include calibration data 1347 that is the same as or different from each other depending on the operation of the actuator 1330 included therein.

[0180] In some embodiments, one of the plurality of camera modules 1300a, 1300b, and 1300c (e.g., 1300b) may be a folded lens type camera module including the above-mentioned prism 1305 and OPFE 1310, and the other camera modules (e.g., 1300a and 1300c) may be vertical type camera modules that do not include the prism 1305 and OPFE 1310. However, the present disclosure is not limited thereto.

[0181] In some embodiments, one of the plurality of camera modules 1300a, 1300b, and 1300c (e.g., 1300c) may be a vertical type depth camera that extracts depth information by using infrared rays (IR).

[0182] In some embodiments, at least two of the plurality of camera modules 1300a, 1300b, and 1300c (e.g., 1300a and 1300b) may have different fields of view. In this case, for example, the optical lenses of at least two of the plurality of camera modules 1300a, 1300b, and 1300c (e.g., 1300a and 1300b) may be different from each other, but one or more embodiments are not limited thereto.

[0183] In addition, in some embodiments, the plurality of camera modules 1300a, 1300b, and 1300c may have different fields of view from each other. In this case, the optical lenses respectively included in the plurality of camera modules 1300a, 1300b, and 1300c may be different from each other, but the inventive concept is not limited thereto.

[0184] In some embodiments, the plurality of camera modules 1300a, 1300b, and 1300c may be physically isolated from each other. That is, the sensing area of one image sensor 1342 may not be divided and used by the plurality of camera modules 1300a, 1300b, and 1300c, but rather the plurality of camera modules 1300a, 1300b, and 1300c may each have an independent image sensor 1342 disposed therein.

[0185] Return reference Figure 24 , the application processor 1400 may include an image processing device 1410, a memory controller 1420, and an internal memory 1430. The application processor 1400 may be implemented separately from the plurality of camera modules 1300a, 1300b, and 1300c. For example, the application processor 1400 and the plurality of camera modules 1300a, 1300b, and 1300c may be implemented separately as separate semiconductor chips.

[0186] The image processing device 1410 may include a plurality of image processors 1411, 1412, and 1413 and a camera module controller 1414.

[0187] The image data generated by each of the camera modules 1300a, 1300b, and 1300c may be provided to the image processing device 1410 via separate image signal lines ISLa, ISLb, and ISLc, respectively. For example, image data transmission may be performed by using a camera serial interface (CSI) based on the Mobile Industry Processor Interface (MIPI), but is not limited thereto.

[0188] The image data transmitted to the image processing device 1410 can be stored in the external memory 1600 before being transmitted to the image processors 1411 and 1412. The image data stored in the external memory 1600 can be provided to the image processor 1411 and / or the image processor 1412. The image processor 1411 can correct the image data to generate a video. The image processor 1412 can correct the image data to generate a still image. For example, the image processors 1411 and 1412 can perform preprocessing operations such as color calibration and gamma calibration on the image data.

[0189] The image processor 1411 can include sub-processors. When the number of sub-processors is equal to the number of camera modules 1300a, 1300b, and 1300c, each sub-processor can process the image data provided from one camera module. When the number of sub-processors is less than the number of camera modules 1300a, 1300b, and 1300c, at least one sub-processor can process the image data provided from multiple camera modules by using time-sharing processing. The image data processed by the image processor 1411 and / or the image processor 1412 can be stored in the external memory 1600 before being transmitted to the image processor 1413. The image data stored in the external memory 1600 can be transmitted to the image processor 1413. The image processor 1413 can perform post-processing operations such as noise calibration and sharpening calibration on the image data.

[0190] The image data processed in the image processor 1413 can be provided to the image generator 1700. The image generator 1700 can generate a final image by using the image data provided from the image processor 1413 according to the image generation information or the mode signal.

[0191] Specifically, the image generator 1700 can generate an output image by merging at least a part of the image data generated by the camera modules 1300a, 1300b, and 1300c having different fields of view according to the image generation information or the mode signal. In addition, the image generator 1700 can generate an output image by selecting one of the multiple image data generated by the camera modules 1300a, 1300b, and 1300c having different fields of view according to the image generation information or the mode signal.

[0192] In some embodiments, the image generation information can include a scaling signal or a scaling factor. In addition, in some embodiments, the mode signal can be a signal based on, for example, the mode selected by the user.

[0193] When the image generation information is a zoom signal (zoom factor) and the camera modules 1300a, 1300b, and 1300c have different fields of view (viewing angles) from each other, the image generator 1700 may perform different operations according to the type of the zoom signal. For example, when the zoom signal is a first signal, the image data output from the camera module 1300a is merged with the image data output from the camera module 1300c, and then, an output image may be generated by using the merged image signal and the image data output from the camera module 1300b that is not used for merging. When the zoom signal is a second signal different from the first signal, the image generator 1700 may not perform image data merging, and then, an output image may be generated by selecting one of the multiple image data output from the camera modules 1300a, 1300b, and 1300c, respectively. However, one or more embodiments are not limited thereto, and the method of processing image data may be modified as needed.

[0194] The camera module controller 1414 may provide control signals to each of the camera modules 1300a, 1300b, and 1300c. The control signals generated by the camera module controller 1414 may be provided to the corresponding camera modules 1300a, 1300b, and 1300c via separate control signal lines CSLa, CSLb, and CSLc.

[0195] In some embodiments, the control signals provided from the camera module controller 1414 to the multiple camera modules 1300a, 1300b, and 1300c may include mode information according to a mode signal. The multiple camera modules 1300a, 1300b, and 1300c may operate in a first operation mode and a second operation mode related to a sensing speed based on the mode information.

[0196] In the first operation mode, the multiple camera modules 1300a, 1300b, and 1300c may generate image signals at a first speed (e.g., generate image signals at a first frame rate), encode the image signals at a second speed faster than the first speed (e.g., encode image signals at a second frame rate greater than the first frame rate), and transmit the encoded image signals to the application processor 1400. Here, the second speed may be 30 times faster than the first speed or less.

[0197] The application processor 1400 may store the received image signal (i.e., the encoded image signal) in the internal memory 1430 provided therein or in the external memory 1600 outside the application processor 1400, and then, read the encoded signal from the internal memory 1430 or the external memory 1600 and decode it, and may display the image data generated based on the decoded image signal. For example, the image processors 1411 and 1412 in the image processing device 1410 may perform decoding, and may perform image processing on the decoded image signal.

[0198] In the second operation mode, the plurality of camera modules 1300a, 1300b, and 1300c generate image signals at a third speed slower than the first speed (e.g., generate image signals at a third frame rate lower than the first frame rate), and may transmit the image signals to the application processor 1400. The image signals provided to the application processor 1400 may be unencoded signals. The application processor 1400 may perform image processing on the received image signals, or store the image signals in the internal memory 1430 or the external memory 1600.

[0199] The PMIC 1500 may supply power, such as a power supply voltage, to each of the plurality of camera modules 1300a, 1300b, and 1300c. For example, under the control of the application processor 1400, the PMIC 1500 may supply a first power to the camera module 1300a via the power signal line PSLa, a second power to the camera module 1300b via the power signal line PSLb, and a third power to the camera module 1300c via the power signal line PSLc.

[0200] The PMIC 1500 may generate power corresponding to each of the plurality of camera modules 1300a, 1300b, and 1300c, and in response to the power control signal PCON from the application processor 1400, may adjust the power level. The power control signal PCON may include power adjustment signals for each operation mode of the plurality of camera modules 1300a, 1300b, and 1300c. For example, the operation mode may include a low power mode, and the power control signal PCON may include information about the operation of the camera module in the low power mode and the set power level. The levels of the power supplied to the plurality of camera modules 1300a, 1300b, and 1300c may be equal to each other or different from each other. In addition, the power level may be dynamically changed.

[0201] It should be understood that the embodiments described herein should be considered only in a descriptive sense and not for purposes of limitation. The description of a feature or aspect in each embodiment is generally to be considered as available for other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those of ordinary skill in the art will understand that various changes in form and detail may be made without departing from the spirit and scope defined by the appended claims.

Claims

1. An image sensor, comprising: A sensor substrate, including a plurality of pixels configured to sense light, and the plurality of pixels are two-dimensionally arranged; A nano-photonic lens array, including a plurality of meta-regions respectively corresponding to the plurality of pixels; And An anti-reflection layer on the light incident surface of the nano-photonic lens array, the anti-reflection layer being configured to reduce reflection loss and including a plurality of nano-patterns periodically and two-dimensionally arranged, Wherein, the plurality of meta-regions include a plurality of nano-structures, the plurality of nano-structures being configured to perform color separation on light incident on the nano-photonic lens array and focus the light onto each of the plurality of pixels, and Wherein, when the distance between a first nano-structure among the plurality of nano-structures and a first nano-pattern among the plurality of nano-patterns closest to the first nano-structure is g1 and the distance between a second nano-structure different from the first nano-structure among the plurality of nano-structures and a second nano-pattern among the plurality of nano-patterns closest to the second nano-structure is g2, |g1 - g2| = Δg satisfies the condition Δg ≤ T / 4, where T represents the arrangement period of the plurality of nano-patterns.

2. The image sensor according to claim 1, wherein, At the central portion of the nano-photonic lens array, g1 is 0.

3. The image sensor according to claim 1, wherein, At the central portion of the nano-photonic lens array, the first nano-structure and the first nano-pattern closest to the first nano-structure are arranged such that the first nano-structure and the first nano-pattern do not overlap with each other.

4. The image sensor according to claim 3, wherein, The first nano-structure is at the central portion of the nano-photonic lens array, and g1 is T / 2.

5. The image sensor according to claim 1, wherein, Δg is 0 with respect to the entire region of the nano-photonic lens array.

6. The image sensor according to claim 1, wherein, The first nano-structure is at the central portion where the incident light of the nano-photonic lens array is perpendicularly incident, the second nano-structure is at the peripheral portion where the incident light of the nano-photonic lens array is obliquely incident, and Wherein, g1 is different from g2.

7. The image sensor according to claim 1, wherein, At the central portion where the incident light of the nano-photonic lens array is perpendicularly incident, the plurality of pixels and the plurality of meta-regions corresponding to each other are matched, and Wherein, at the peripheral portion where the incident light of the nano-photonic lens array is obliquely incident, the plurality of meta-regions are offset toward the central portion of the nano-photonic lens array with respect to the corresponding pixels among the plurality of pixels.

8. The image sensor according to claim 7, wherein, At the peripheral portion of the nano-photonic lens array, the plurality of nano-patterns of the anti-reflection layer are offset toward the central portion of the nano-photonic lens array, and Wherein, the deviation between the offset distance of the plurality of meta-regions and the offset distance of the plurality of nano-patterns is within ±1 / 4 of the arrangement period of the plurality of nano-patterns.

9. The image sensor according to claim 8, wherein, In the entire region of the nano-photonic lens array, the offset distance of the plurality of meta-regions and the offset distance of the plurality of nano-patterns are equal to each other.

10. The image sensor according to claim 1, wherein, The pitch between the plurality of nano-structures is equal to the pitch between the plurality of nano-patterns.

11. The image sensor according to claim 1, further comprising: A color filter layer, between the sensor substrate and the nanophotonic lens array; And A planarization layer, between the color filter layer and the nanophotonic lens array.

12. The image sensor according to claim 11, wherein, The color filter layer includes: a first color filter configured to transmit light of a first wavelength; a second color filter configured to transmit light of a second wavelength different from the first wavelength; a third color filter configured to transmit light of a third wavelength different from the first wavelength and the second wavelength; and a fourth color filter configured to transmit light of the first wavelength, Wherein, the plurality of pixels include a first pixel corresponding to the first color filter, a second pixel corresponding to the second color filter, a third pixel corresponding to the third color filter, and a fourth pixel corresponding to the fourth color filter, and Wherein, the plurality of metasurfaces include a first metasurface corresponding to the first pixel, a second metasurface corresponding to the second pixel, a third metasurface corresponding to the third pixel, and a fourth metasurface corresponding to the fourth pixel.

13. The image sensor according to claim 12, wherein, At a central portion where incident light of the nanophotonic lens array is incident perpendicularly, the boundaries of the first pixel, the boundary of the first color filter, and the boundary of the first metasurface corresponding to each other match, the boundaries of the second pixel, the boundary of the second color filter, and the boundary of the second metasurface corresponding to each other match, the boundaries of the third pixel, the boundary of the third color filter, and the boundary of the third metasurface corresponding to each other match, and the boundaries of the fourth pixel, the boundary of the fourth color filter, and the boundary of the fourth metasurface corresponding to each other match, and Wherein, at a peripheral portion where incident light of the nanophotonic lens array is incident obliquely, the first color filter, the second color filter, the third color filter, and the fourth color filter are respectively offset by a first distance toward the central portion of the nanophotonic lens array with respect to the first pixel, the second pixel, the third pixel, and the fourth pixel corresponding to the first color filter, the second color filter, the third color filter, and the fourth color filter, and the first metasurface, the second metasurface, the third metasurface, and the fourth metasurface are respectively offset by a second distance greater than the first distance toward the central portion of the nanophotonic lens array with respect to the first pixel, the second pixel, the third pixel, and the fourth pixel corresponding to the first metasurface, the second metasurface, the third metasurface, and the fourth metasurface.

14. The image sensor according to claim 13, wherein, At the peripheral portion of the nanophotonic lens array, the plurality of nanoscale patterns are offset by a third distance toward the central portion of the nanophotonic lens array, and Wherein, in the entire region of the nanophotonic lens array, the condition d2 - T / 4 ≤ d3 ≤ d2 + T / 4 is satisfied, where d2 represents the second distance and d3 represents the third distance.

15. The image sensor according to claim 1, wherein, Each of the plurality of nanostructures includes a first nanostructure layer and a second nanostructure layer on the first nanostructure layer, and wherein, g1 corresponds to the distance between the second nanostructure layer of the first nanostructure and the first nanopattern, and g2 corresponds to the distance between the second nanostructure layer of the second nanostructure and the second nanopattern.

16. The image sensor according to claim 15, wherein, At a peripheral portion where incident light of the nanophotonic lens array is incident obliquely, the second nanostructure layer is offset toward a central portion of the nanophotonic lens array.

17. The image sensor according to claim 1, wherein, The antireflection layer includes a first antireflection layer and a second antireflection layer on the first antireflection layer, wherein, the first antireflection layer is a film structure and is on the nanophotonic lens array, and wherein, the second antireflection layer includes the plurality of nanopatterns.

18. The image sensor according to claim 1, wherein, The antireflection layer further includes a dielectric layer transparent to visible light, and the plurality of nanopatterns include holes formed through the dielectric layer.

19. The image sensor according to claim 1, wherein, The arrangement period of the plurality of nanopatterns is 150 nm to 300 nm, and the width or diameter of each of the plurality of nanopatterns is 60% to 90% of the arrangement period of the plurality of nanopatterns.

20. An electronic device, comprising: a lens assembly configured to form an optical image of an object; an image sensor configured to convert the optical image formed by the lens assembly into an electrical signal; and at least one processor configured to process the electrical signal generated by the image sensor, wherein, the image sensor includes: a sensor substrate including a plurality of pixels configured to sense light, the plurality of pixels being two-dimensionally arranged; a nanophotonic lens array including a plurality of metasurfaces respectively corresponding to the plurality of pixels; and an antireflection layer on a light incident surface of the nanophotonic lens array, the antireflection layer being configured to reduce reflection loss and including a plurality of nanopatterns arranged periodically and two-dimensionally, wherein, the plurality of metasurfaces include a plurality of nanostructures configured to perform color separation on light incident on the nanophotonic lens array and focus the light onto each of the plurality of pixels, and wherein, when the distance between a first nanostructure among the plurality of nanostructures and a first nanopattern among the plurality of nanopatterns closest to the first nanostructure is g1 and the distance between a second nanostructure different from the first nanostructure among the plurality of nanostructures and a second nanopattern among the plurality of nanopatterns closest to the second nanostructure is g2, |g1 - g2| = Δg satisfies the condition Δg ≤ T / 4, where T represents the arrangement period of the plurality of nanopatterns.

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