Display panel, preparation method thereof and display device

Abstract

The invention relates to the technical field of display, and particularly provides a display panel and a preparation method thereof and a display device.The display panel comprises a substrate and an isolation structure, the isolation structure is located on one side of the substrate, and a plurality of isolation openings are defined by the isolation structure; a first film layer is arranged on one side, facing the isolation opening, of the isolation structure, and a rough surface is arranged on the surface of one side, facing the isolation opening, of the first film layer; wherein the material of the first film layer is different from that of the isolation structure. The application is used for improving the use performance of the display panel to a certain extent.

Description

Technical Field

[0001] This application belongs to the field of display technology. More specifically, it relates to a display panel, a preparation method thereof, and a display device. Background Art

[0002] Organic Light Emitting Diode (OLED) display technology is regarded as the most potential new display technology for the next generation. Compared with liquid crystal display technology, OLED display technology has the advantages of low energy consumption, low cost, self-luminescence, wide viewing angle, and fast response speed.

[0003] In the preparation process of traditional OLED display panels, the light-emitting pixel patterning is usually achieved through a Fine Metal Mask (FMM). The FMM technology is mature and has rich mass production experience. However, the FMM technology also has problems such as limited precision and high development costs. The maskless fine metal technology eliminates the limitations of traditional OLED processes on display screen size, resolution, and other screen body performances, and has the advantages of high performance, full-domain size, and agile delivery. Patents CN118251982A, CN116648095A, CN117062489A, CN118742138A, CN118678783A, CN118660598A, CN118675450A, CN118824188A, CN118781966A record the relevant content of the maskless fine metal technology for reference.

[0004] However, the performance of current OLED display products needs to be improved. Summary of the Invention

[0005] This application provides a display panel, a preparation method thereof, and a display device to at least improve the performance of the display panel to a certain extent.

[0006] To achieve the above object, the technical solution adopted in this application is: In the first aspect, this application provides a display panel, including a substrate and an isolation structure. The isolation structure is located on one side of the substrate. The isolation structure encloses to form a plurality of isolation openings. A first film layer is provided on the side of the isolation structure facing the isolation openings. The surface of the first film layer facing the isolation openings has a rough surface; wherein, the material of the first film layer is different from the material of the isolation structure.

[0007] In the display panel provided in the embodiment of the present application, a portion of the sidewall of the isolation structure facing the isolation opening includes a first film layer having a different material, and the first film layer has a rough surface. The uneven rough surface can effectively increase the surface area of the sidewall of the isolation structure facing the isolation opening, thereby improving the connection strength between the isolation structure and other film layers subsequently prepared thereon. For example, the connection strength between the isolation structure and the first encapsulation layer can be enhanced, thereby improving the reliability of the display panel, reducing the possibility of water vapor intruding into the display panel from there, and improving the yield of the display panel.

[0008] Optionally, the isolation structure comprises a first isolation portion and a second isolation portion arranged in a stacked manner, the second isolation portion is located on a side of the first isolation portion facing away from the substrate, and the first isolation portion and the second isolation portion enclose the isolation opening;

[0009] wherein the orthographic projection of the first isolation portion on the substrate is located within the orthographic projection of the second isolation portion on the substrate;

[0010] The first isolation portion includes a first isolation sub-portion and a second isolation sub-portion, wherein the second isolation sub-portion is located on a side of the first isolation sub-portion facing away from the substrate;

[0011] The orthographic projection of the second isolation sub-portion on the substrate is located within the orthographic projection of the first isolation sub-portion on the substrate.

[0012] Optionally, an orthographic projection of one end of the second isolating sub-portion close to the second isolating sub-portion on the substrate is located within an orthographic projection of one end of the second isolating sub-portion close to the first isolating sub-portion on the substrate.

[0013] Optionally, a material of the second isolation sub-portion is different from a material of the first film layer.

[0014] Optionally, the material of the first isolating sub-portion includes molybdenum.

[0015] Optionally, the material of the second insulating sub-part includes aluminum.

[0016] Optionally, the material of the second isolation portion includes titanium.

[0017] Optionally, the first film layer is provided on at least a portion of a side of the first isolation portion facing the isolation opening.

[0018] Optionally, the first film layer is arranged on a side of at least a portion of the second isolation sub-portion facing the isolation opening.

[0019] Optionally, the first film layer includes aluminum oxide and / or aluminum nitride.

[0020] Optionally, a second film layer is disposed on one side of the isolation structure facing the isolation opening, and the second film layer is located on the side of the first film layer close to the substrate;

[0021] Wherein, in a direction perpendicular to the plane of the substrate, the orthographic projection of the first film layer on the substrate is farther from the center of the isolation opening than the orthographic projection of the second film layer on the substrate.

[0022] Optionally, the roughness of the first film layer is greater than the roughness of the second film layer.

[0023] Optionally, the second film layer is disposed on at least a part of the first isolation portion facing the isolation opening.

[0024] Optionally, the second film layer is disposed on at least a part of the first isolation sub-portion facing the isolation opening.

[0025] Optionally, the second film layer includes at least one of molybdenum nitride and molybdenum oxide.

[0026] Optionally, the rough surface has a concavo-convex structure.

[0027] Optionally, the concavo-convex structure includes at least one of pits and grooves.

[0028] Optionally, the concavo-convex structure includes a plurality of recesses and protrusions arranged at intervals, and in a direction perpendicular to the rough surface, the minimum distance between the recesses and the protrusions is greater than or equal to 3 nm.

[0029] Optionally, the display panel further includes a first encapsulation layer, the first encapsulation layer includes an encapsulation unit corresponding to the isolation opening, and the encapsulation unit is partially located in the isolation opening and covers the rough surface.

[0030] Optionally, the relationship between the thermal expansion coefficient of the first film layer and the thermal expansion coefficient of the first encapsulation layer satisfies:

[0031] [a - b] ≤ C * 10%;

[0032] Wherein, a is the thermal expansion coefficient of the first film layer, b is the thermal expansion coefficient of the first encapsulation layer, and C is less than or equal to the larger value of a and b.

[0033] Optionally, C is the larger value of a and b, or C is the smaller value of a and b; or C is less than the smaller value of a and b.

[0034] Optionally, the display panel further includes a display module, the display module is located on the side of the substrate facing the isolation structure and includes a plurality of light-emitting elements, and the light-emitting elements are located in the corresponding isolation openings.

[0035] Optionally, the light-emitting element includes a first electrode, a light-emitting functional layer, and a second electrode that are stacked.

[0036] Optionally, the second electrode overlaps with a side wall of the isolation structure on a side facing the isolation opening.

[0037] Optionally, the light-emitting element has a first element, a second element, and a third element with different emission colors. The isolation opening includes a first opening, a second opening, and a third opening. The first opening is for accommodating the first element, the second opening is for accommodating the second element, and the third opening is for accommodating the third element. The first film layer is disposed on a side of the isolation structure facing at least one of the first opening, the second opening, and the third opening.

[0038] Optionally, the first film layer is disposed on a side of the isolation structure facing at least one of the second opening and the third opening.

[0039] Optionally, the display panel further includes a pixel definition layer located between the substrate and the isolation structure. The pixel definition layer is provided with a plurality of pixel openings that expose the first electrode of the light-emitting element.

[0040] Wherein, the pixel opening and the isolation opening are correspondingly arranged and communicated, and a positive projection of the pixel opening on the substrate is located within a positive projection of the isolation opening on the substrate.

[0041] Optionally, the first electrode is located between the substrate and the pixel definition layer. At least a part of a surface of the first electrode facing away from the substrate is exposed through the pixel opening. The light-emitting functional layer covers the pixel opening and contacts the first electrode, and the second electrode covers a surface of the light-emitting functional layer facing away from the substrate.

[0042] Optionally, the encapsulation unit includes:

[0043] A first encapsulation part located on a side of the light-emitting element facing away from the substrate;

[0044] A second encapsulation part located on a side of the isolation structure facing away from the substrate;

[0045] A third encapsulation part covering a side wall of the isolation structure on a side facing the isolation opening and connecting the first encapsulation part and the second encapsulation part;

[0046] Wherein, the third encapsulation part covers the rough surface.

[0047] Optionally, in a direction perpendicular to the plane of the substrate, there is a gap between the second encapsulation portion and the side surface of the isolation structure facing away from the substrate.

[0048] Optionally, the material of the first encapsulation layer includes an inorganic material.

[0049] In a second aspect, the present application also provides a method for manufacturing a display panel, including:

[0050] Preparing an isolation structure on one side of a substrate, the isolation structure enclosing to form a plurality of isolation openings;

[0051] Cleaning the side walls of the isolation structure facing the isolation openings;

[0052] Performing plasma treatment on at least part of the side walls after the cleaning treatment to form a first film layer with a rough surface.

[0053] In the method for manufacturing a display panel provided in the embodiments of the present application, by performing plasma treatment on at least part of the side walls of the isolation structure after cleaning treatment, a first film layer with a rough surface can be formed on the side walls, so as to achieve the effect of increasing the roughness of the surface of the isolation structure facing the isolation openings, thereby improving the bonding firmness between the isolation structure and other film layers prepared thereon subsequently, and ultimately achieving the purpose of improving the reliability of the display panel and the yield of the display panel.

[0054] Optionally, the step of performing plasma treatment on at least part of the side walls after the cleaning treatment to form a first film layer with a rough surface includes:

[0055] Performing plasma treatment on at least part of the side walls after the cleaning treatment with a reaction gas to form the first film layer on the side of the isolation structure facing the isolation openings;

[0056] Wherein, the reaction gas includes at least one of a nitrogen-oxygen mixture and a nitrogen-hydrogen mixture.

[0057] Optionally, the first film layer includes aluminum oxide and / or aluminum nitride.

[0058] Optionally, the step of cleaning the side walls of the isolation structure facing the isolation openings includes:

[0059] Cleaning the side walls of the isolation structure facing the isolation openings with an alkaline cleaning solution;

[0060] Wherein, the alkaline cleaning solution includes tetramethylammonium hydroxide.

[0061] Optionally, the display panel further includes a display module, the display module is located on a side of the substrate facing the isolation structure and includes a plurality of light-emitting elements, and the light-emitting elements are located in corresponding isolation openings;

[0062] The isolation openings include a first opening, a second opening, and a third opening, the light-emitting elements include a first element, a second element, and a third element with different emission colors, and the step of preparing an isolation structure on one side of the substrate, the isolation structure enclosing a plurality of isolation openings, includes:

[0063] Form an isolation material layer on one side of the substrate;

[0064] Perform a first patterning process on the isolation material layer to obtain the isolation structure having the first opening;

[0065] Prepare a first element in the first opening;

[0066] Prepare a first encapsulation material layer on a side of the first element facing away from the substrate;

[0067] Perform a patterning process on the first encapsulation material layer to form a first encapsulation layer covering the first element;

[0068] Perform a second patterning process on the isolation structure to obtain the isolation structure having the second opening.

[0069] Optionally, the step of preparing an isolation structure on one side of the substrate, the isolation structure enclosing a plurality of isolation openings, further includes:

[0070] Prepare the second element in the second opening;

[0071] Prepare a first encapsulation material layer on a side of the second element facing away from the substrate;

[0072] Perform a patterning process on the first encapsulation material layer to form a first encapsulation layer covering the second element;

[0073] Perform a third patterning process on the isolation structure to obtain the isolation structure having the third opening.

[0074] Optionally, the display panel further includes a display module, the display module is located on a side of the substrate facing the isolation structure and includes a plurality of light-emitting elements, and the light-emitting elements are located in corresponding isolation openings;

[0075] The isolation openings include a first opening, a second opening, and a third opening. The light-emitting elements include a first element, a second element, and a third element with different emission colors. The step of cleaning the side wall of the isolation structure on the side facing the isolation openings includes:

[0076] Fabricate the first element within the first opening;

[0077] Fabricate a first encapsulation material layer on the side of the first element facing away from the substrate;

[0078] Perform patterning on the first encapsulation material layer to form a first encapsulation layer covering the first element;

[0079] Form the second opening in the isolation structure;

[0080] Clean the side wall of the isolation structure on the side facing the second opening.

[0081] Optionally, the step of cleaning the side wall of the isolation structure on the side facing the isolation openings further includes:

[0082] Perform plasma treatment on the side wall of the second opening after the cleaning treatment to form a first film layer with a rough surface;

[0083] Fabricate the second element within the second opening;

[0084] Fabricate a first encapsulation material layer on the side of the second element facing away from the substrate;

[0085] Perform patterning on the first encapsulation material layer to form a first encapsulation layer covering the second element;

[0086] Form the third opening in the isolation structure;

[0087] Clean the side wall of the isolation structure on the side facing the third opening.

[0088] Optionally, the step of performing plasma treatment on at least a part of the side wall after the cleaning treatment to form a first film layer with a rough surface includes:

[0089] Perform plasma treatment on the side wall of the third opening after the cleaning treatment to form a first film layer with a rough surface.

[0090] Optionally, the manufacturing method further includes:

[0091] Fabricate the third element within the third opening;

[0092] A first encapsulation material layer is prepared on a side of the third element facing away from the substrate;

[0093] The first encapsulation material layer is patterned to form a first encapsulation layer covering the third element.

[0094] Optionally, before the step of preparing the first element in the first opening, it includes:

[0095] The side wall of the isolation structure facing the first opening is cleaned;

[0096] The side wall of the first opening after the cleaning treatment is subjected to plasma treatment to form a first film layer with a rough surface.

[0097] In a third aspect, the present application further provides a display device, including the display panel described in any one of the above, or including the display panel prepared by the preparation method described in any one of the above.

[0098] The display device provided by the embodiments of the present application includes the above display panel and / or the preparation method of the display panel. Therefore, the display device at least includes the beneficial effects of any one or several of the above display panels. For specific effects, refer to the above description and will not be elaborated here.

[0099] The beneficial effects of the display panel and the display device provided by the present application are as follows: Compared with the related art, the display panel provided by the present application can improve the adhesion and bonding strength between the isolation structure and the first encapsulation layer through at least part of the side wall with a rough surface of the isolation structure facing the isolation opening, so as to prevent water vapor in the environment from invading through the gap formed between the isolation structure and the first encapsulation layer, so that the first encapsulation layer can better encapsulate and protect the light-emitting element located in the isolation opening, reduce the display dark spot problem caused by the failure of the display panel due to water vapor invasion, and improve the reliability and yield of the display panel; In addition, the isolation structure after plasma treatment also has a higher surface energy and forms aluminum nitride, thereby enhancing the conductivity of part of the surface of the isolation structure, helping to further optimize the display effect of the display panel, and improving the use performance of the display panel to a certain extent. BRIEF DESCRIPTION OF THE DRAWINGS

[0100] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0101] Figure 1Schematic plan view of the display panel provided by the embodiment of the present application;

[0102] Figure 2 is Figure 1 Enlarged view of the structure of the S area in the shown display panel;

[0103] Figure 3 is Figure 2 Partial cross-sectional structure schematic view of the A-A direction of the shown display panel;

[0104] Figure 4 is Figure 3 Enlarged view of the structure of the B area in;

[0105] Figure 5 is Figure 4 Enlarged view of the structure of the C area in;

[0106] Figure 6 is Figure 4 Another enlarged view of the structure of the C area in;

[0107] Figure 7 Flow chart of the manufacturing method of the display panel provided by the embodiment of the present application;

[0108] Figures 8A - 8G Schematic view of the manufacturing process of the display panel provided by the embodiment of the present application;

[0109] Figure 9 Schematic view of the structure of the display device provided by the embodiment of the present application.

[0110] Among them, each reference numeral in the figure:

[0111] 100, display device; 10, display panel;

[0112] 1, substrate; 2, isolation structure; 201, isolation opening; 201a, first opening; 201b, second opening; 201c, third opening; 2011, first film layer; 2012, second film layer; 21, first isolation part; 211, first sub-isolation part; 212, second sub-isolation part; 22, second isolation part; 3, first encapsulation layer; 31, first encapsulation part; 32, second encapsulation part; 33, third encapsulation part; 4, light-emitting element; 41, first electrode; 42, light-emitting functional layer; 43, second electrode; B, first element; G, second element; R, third element; 5, pixel definition layer; 501, pixel opening. Detailed implementation manners

[0113] In order to make the technical problems, technical solutions and beneficial effects to be solved by this application clearer and more understandable, the following further details this application in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not used to limit this application.

[0114] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0115] In the description of this application, it should be understood that the orientation or positional relationship indicated by terms such as "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to this application.

[0116] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of this application, "a plurality" means two or more, unless otherwise specifically defined.

[0117] In this application, unless otherwise clearly defined and limited, terms such as "installation", "connection", "connection", "fixation", etc. should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection, an electrical connection or can communicate with each other; it can be directly connected, or indirectly connected through an intermediate medium, and can be the connection inside two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0118] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0119] In the present application, the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the described specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0120] The term "layer" used in the text may refer to a partial material layer corresponding to a material having a certain thickness. A layer may extend along a complete underlying structure or an overlying structure, or may have a range smaller than the range of the underlying or overlying structure. In addition, a layer may be a region of a homogeneous or inhomogeneous continuous structure, the thickness of which is less than the thickness of the continuous structure. For example, a layer may be located between the top surface and the bottom surface of the continuous structure or between any pairs of lateral planes at the top surface and the bottom surface. A layer may extend laterally, vertically and / or along a tapered surface. A substrate may be a layer, may include one or more layers therein, and / or may have one or more layers located thereon, above it and / or below it. A layer may include multiple layers. For example, an interconnect layer may include one or more conductors and contact layers (in which contacts, interconnect lines and / or vias are formed) and one or more dielectric layers.

[0121] In the related art, an isolation structure 2 is provided in the display panel 10, and the isolation structure 2 can be used to isolate some functional film layers in adjacent light-emitting elements 4 (also referred to as light-emitting devices), ensuring that adjacent light-emitting elements 4 do not interfere with each other, which helps to improve the display effect of the display panel 10. However, it is found in the related art that some light-emitting elements 4 have failure failures, which in turn causes the display panel 10 to have a dark spot problem, which affects the display effect of the display panel 10 to a certain extent, and ultimately affects its performance.

[0122] Based on this, embodiments of the present application provide a display panel 10, a manufacturing method thereof, and a display device 100, so as to alleviate or improve the above technical problems to at least a certain extent.

[0123] Please refer to Figures 1 - 3 , embodiments of the present application provide a display panel 10, including a substrate 1 and an isolation structure 2 located on one side of the substrate 1. The isolation structure 2 encloses a plurality of isolation openings 201, and a first film layer 2011 is provided on the side of the isolation structure 2 facing the isolation openings 201. The surface of the first film layer 2011 facing the isolation openings 201 has a rough surface; wherein, the material of the first film layer 2011 is different from that of the isolation structure 2.

[0124] It should be noted that the rough surface refers to a surface with unevenness, undulation, sharp protrusions or obvious depression structures on the surface, etc. The convex and concave parts formed on the rough surface are arranged alternately and present a relatively complex and changeable shape. In addition, this rough surface is a structure visible in a microscopic environment.

[0125] In the display panel 10 provided by the embodiments of the present application, by setting that part of the side wall of the isolation structure 2 facing the isolation openings 201 includes a first film layer 2011 with a different material, and the first film layer 2011 has a rough surface, the surface area of the side wall of the isolation structure 2 facing the isolation openings 201 can be effectively increased through the uneven rough surface, thereby improving the connection firmness between the isolation structure 2 and other film layers prepared thereon subsequently.

[0126] Taking the first encapsulation layer 3 used for encapsulating the isolation openings 201 as an example, the above rough surface can enhance the connection firmness between the isolation structure 2 and the first encapsulation layer 3. At this time, the first encapsulation layer 3 can firmly adhere to the side wall surface of the isolation structure 2 facing the isolation openings 201 through the rough surface, thereby reducing the possibility that the isolation structure 2 and the first encapsulation layer 3 are separated from each other and gaps appear, and can further improve the encapsulation reliability of the first encapsulation layer 3 for the isolation openings 201, and reduce the possibility of water vapor invading the display panel 10 from this place, especially the light-emitting element 4 located in the isolation openings 201, which helps to better protect the light-emitting element 4 located in the isolation openings 201 and improve the yield and service performance of the display panel 10.

[0127] Of course, when the display panel 10 is subjected to bending deformation or other external forces, the above-mentioned rough surface can enable the first encapsulation layer 3 to always firmly adhere to the side wall of the isolation opening 201, reducing the possibility of relative displacement of the first encapsulation layer 3 relative to the isolation opening 201 due to external forces, further improving the encapsulation reliability of the first encapsulation layer 3 for the isolation opening 201, preventing the light-emitting element 4 located in the isolation opening 201 from failing due to the displacement of the first encapsulation layer 3, and improving the reliability of the display panel 10.

[0128] When the display panel 10 is a flexible panel, the above structure can further improve the reliability and durability of the display panel 10.

[0129] In some embodiments, referring to Figure 3 , the display panel 10 further includes a display module, a pixel definition layer 5, and a first encapsulation layer 3. The display module is located on the side of the substrate 1 facing the isolation structure 2 and includes a plurality of light-emitting elements 4. The light-emitting elements 4 are arranged in corresponding isolation openings 201. The first encapsulation layer 3 includes a plurality of encapsulation units corresponding to the isolation openings 201. The encapsulation units are partially located in the isolation openings 201, for encapsulating the light-emitting elements 4 and covering the rough surface formed around the isolation openings 201.

[0130] Referring to Figure 3 , in the direction perpendicular to the plane of the substrate 1, the overall cross-sectional shape of the isolation structure 2 formed between two adjacent isolation openings 201 is similar to a rectangular or trapezoidal structure, or its cross-sectional shape can also present a "wide at the top and narrow at the bottom" shape, that is, an inverted trapezoid.

[0131] The isolation structure 2 can be a single-layer structure or a multi-layer structure.

[0132] In some embodiments, the isolation structure 2 is a stacked structure, including a first isolation portion 21 and a second isolation portion 22 arranged in a stacked manner. The second isolation portion 22 is located on the side of the first isolation portion 21 facing away from the substrate 1. The first isolation portion 21 and the second isolation portion 22 enclose to form the isolation opening 201.

[0133] Referring to Figure 3 , the orthographic projection of the first isolation portion 21 on the substrate 1 is located within the orthographic projection of the second isolation portion 22 on the substrate 1.

[0134] Specifically, the first isolation portion 21 can be a single-layer structure or a multi-layer structure. When the first isolation portion 21 is a multi-layer structure, it includes a first isolation sub-portion 211 and a second isolation sub-portion 212 arranged in a stacked manner. The second isolation sub-portion 212 is located on the side of the first isolation sub-portion 211 facing away from the substrate 1; among them, the orthographic projection of the second isolation sub-portion 212 on the substrate 1 is located within the orthographic projection of the first isolation sub-portion 211 on the substrate 1.

[0135] At this time, the isolation structure 2 can form an undercut structure in which the part closer to the substrate 1 shrinks towards the middle compared to the part farther from the substrate 1. This undercut structure can cause the film layers constituting the light-emitting element 4 to break at this location during the preparation of the display panel 10, so that the film layers located in two adjacent isolation openings 201 form independent film layers, enabling each different light-emitting element 4 to be independently controlled. At the same time, the isolation structure 2 can also eliminate the need for a mask plate when preparing the film layers for constituting the light-emitting element 4 in the display panel 10, thereby helping to reduce the processing cost.

[0136] In some embodiments, the second isolation sub-portion 212 located between the first isolation sub-portion 211 and the second isolation portion 22 has a rectangular or trapezoid-like structure.

[0137] Specifically, the second isolation sub-portion 212 has a trapezoidal structure. The orthographic projection of the end of the second isolation sub-portion 212 closer to the second isolation portion 22 on the substrate 1 is located within the orthographic projection of the end of the second isolation sub-portion 212 closer to the first isolation sub-portion 211 on the substrate 1.

[0138] The side wall of the second isolation sub-portion 212 closer to the isolation opening 201 is offset in a direction away from the middle of the isolation opening 201 relative to the side walls of the second isolation portion 22 and the first isolation sub-portion 211 closer to the isolation opening 201, so as to further form an undercut structure between the second isolation sub-portion 212 and the second isolation portion 22.

[0139] Of course, in other similar embodiments, the shape of the isolation structure 2 can also be adaptively adjusted according to processing needs.

[0140] It should be noted that the material of the above isolation structure 2 includes a conductive material, so that the light-emitting elements 4 in adjacent isolation openings 201 can be electrically connected through the isolation structure 2, facilitating independent control of different light-emitting elements 4 in the display panel 10.

[0141] Specifically, the material of the second isolation portion 22 includes titanium and is a titanium metal layer; the material of the second isolation sub-portion 212 includes aluminum and is an aluminum metal layer; the material of the first isolation sub-portion 211 includes molybdenum and is a molybdenum metal layer. It should be noted that the material of the second isolation sub-portion 212 is different from the material of the first film layer 2011.

[0142] Please refer to Figure 3 , the light-emitting element 4 corresponding to the isolation opening 201 is a stacked structure, including a first electrode 41, a light-emitting functional layer 42, and a second electrode 43 stacked. The second electrode 43 is lapped with the side wall of the isolation structure 2 facing the isolation opening 201, that is, lapped with the first isolation portion 21 of the isolation structure 2.

[0143] Specifically, during actual processing, the second electrode 43 overlaps with the first isolation sub - part 211 of the first isolation part 21. Of course, at least part of the second electrode 43 may also overlap with the second isolation sub - part 212 of the first isolation part 21.

[0144] Among them, the light - emitting functional layer 42 can be made of organic small - molecule light - emitting materials, complex light - emitting materials, and polymer polymers, etc. Different light - emitting functional layers 42 can be used to emit light of different colors. Generally speaking, the number of the above - mentioned light - emitting functional layers 42 is three and they are respectively used to emit red, green, and blue light.

[0145] Specifically, the light - emitting element 4 can be set to have a first element B, a second element G, and a third element R with different light - emitting colors.

[0146] In some embodiments, the light - emitting wavelength of the first element B is less than that of the second element G, and the light - emitting wavelength of the second element G is less than that of the third element R. At this time, the light - emitting color of the first element B is blue, the light - emitting color of the second element G is green, and the light - emitting color of the third element R is red.

[0147] In different isolation openings 201, one or more of the above - mentioned three different light - emitting elements 4 can be arranged respectively according to design requirements. In the direction parallel to the plane where the substrate 1 is located, the light - emitting wavelengths of at least two adjacent light - emitting elements 4 are different.

[0148] Please refer to Figure 3 , one of the first electrode 41 and the second electrode 43 is an anode, and the other is a cathode.

[0149] In some embodiments, the first electrode 41 is an anode and the second electrode 43 is a cathode; of course, the first electrode 41 can also be adjusted to be a cathode and the second electrode 43 to be an anode according to needs.

[0150] The display panel 10 further includes a pixel definition layer 5. Please refer to Figure 3 , the pixel definition layer 5 is located between the substrate 1 and the isolation structure 2.

[0151] The pixel definition layer 5 is provided with a plurality of pixel openings 501. The pixel openings 501 expose the first electrodes 41 of some light - emitting elements 4, and can be used to define the pixel range to ensure that each light - emitting element 4 located in different isolation openings 201 can be kept independent of each other. Among them, the pixel openings 501 are correspondingly arranged and communicated with the isolation openings 201, and the orthographic projection of the pixel openings 501 on the substrate 1 is located within the orthographic projection of the isolation openings 201 on the substrate 1.

[0152] Specifically, the first electrode 41 in the light-emitting element 4 is located between the substrate 1 and the pixel defining layer 5. At least a part of the surface of the first electrode 41 on the side facing away from the substrate 1 is exposed through the pixel opening 501. The light-emitting functional layer 42 covers the pixel opening 501 and is in contact with the first electrode 41. The second electrode 43 covers the surface of the light-emitting functional layer 42 on the side facing away from the substrate 1 and is overlapped with the side wall of the isolation structure 2 facing the isolation opening 201 to achieve electrical connection.

[0153] Specifically, the pixel defining layer 5 is made of an inorganic material, which can prevent the water vapor formed in the film layers such as the substrate 1 from eroding the light-emitting device on the side of the pixel defining layer 5 facing away from the substrate 1, and helps to improve the reliability of the display panel 10.

[0154] When the light-emitting element 4 located in the corresponding isolation opening 201 is encapsulated by the encapsulation unit, please refer to Figure 3 , the encapsulation unit includes a first encapsulation part 31, a second encapsulation part 32 and a third encapsulation part 33. The first encapsulation part 31 is located on the side of the light-emitting element 4 facing away from the substrate 1. The second encapsulation part 32 is located on the side of the isolation structure 2 facing away from the substrate 1. The third encapsulation part 33 covers the side wall of the isolation structure 2 facing the isolation opening 201 and includes a rough surface. At the same time, both ends of the third encapsulation part 33 in the direction perpendicular to the plane where the substrate 1 is located are respectively connected to the first encapsulation part 31 and the second encapsulation part 32 to form an integrated encapsulation unit.

[0155] In the direction perpendicular to the plane where the substrate 1 is located, there is a gap between the second encapsulation part 32 and the surface of the isolation structure 2 on the side facing away from the substrate 1.

[0156] Please refer to Figure 4 , in the embodiment of the present application, by processing the isolation structure 2, the side wall surface of the isolation structure 2 facing the isolation opening 201 is a rough surface, thereby improving the firmness of the connection between the third encapsulation part 33 in the first encapsulation layer 3 and the side wall of the isolation structure 2.

[0157] It can be understood that since the isolation structure 2 is arranged around the isolation opening 201, the rough surface formed on the side wall of the isolation structure 2 can also be arranged around the isolation opening 201. Thus, when the encapsulation unit encapsulates the isolation opening 201, a firm structure in the circumferential direction between the encapsulation unit and the isolation opening 201 can be achieved through the rough surface, so as to reduce the possibility of a gap appearing at a certain joint part in the circumferential direction between the encapsulation unit and the isolation opening 201.

[0158] In some embodiments, the above-mentioned first film layer 2011 with a rough surface is formed on the side of the first isolation part 21 of the isolation structure 2 facing the isolation opening 201.

[0159] At least a part of the first isolation part 21 is provided with a first film layer 2011 on the side facing the isolation opening 201. Please refer to Figure 4 .

[0160] Since the surface of the first film layer 2011 facing the isolation opening 201 is a rough surface, when the third encapsulation layer is connected to the isolation structure 2 through the rough surface of the first film layer 2011 and encapsulates the isolation structure 2, it can be firmly combined with the isolation structure 2.

[0161] The above rough surface has various different structural forms. For example, the rough surface has a concavo-convex structure, and the concavo-convex structure includes at least one of pits and grooves.

[0162] Pits, grooves, etc. can effectively increase the surface area of the rough surface, thereby helping to increase the contact area between the rough surface and the first encapsulation layer 3.

[0163] Taking the pit as an example, at this time, the concavo-convex structure includes a plurality of recesses and protrusions arranged at intervals. Please refer to Figure 5 , and the shapes and arrangement manners of the recesses and protrusions have no special rules. In the direction perpendicular to the plane where the rough surface is located, the minimum distance between the above-mentioned recesses and protrusions is greater than or equal to 3 nm.

[0164] It should be noted that "in the direction perpendicular to the plane where the rough surface is located" means that taking one end of the rough surface close to the substrate 1 as the first end and the end far from the substrate 1 as the second end, the plane formed by connecting the first end and the second end of the rough surface is the plane where the rough surface is located. The direction perpendicular to the plane where the rough surface is located is the direction perpendicular to the plane formed by the first end and the second end. In this direction, the recess is recessed toward the side away from the isolation opening 201 with respect to the plane where the rough surface is located, and the protrusion protrudes toward the side away from the isolation opening 201 with respect to the plane where the rough surface is located. The distance between the protrusion and the depression is the distance between the recess and the protrusion.

[0165] In this embodiment, the minimum distance between the recess and the protrusion is greater than or equal to 3 nm, and this distance can effectively increase the overall surface area of the rough surface and the complexity of the microscopic rough structure of the rough surface, thereby effectively improving the adhesion between the rough surface and the encapsulation unit.

[0166] Specifically, the above minimum distance can be any value among the values such as 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, etc.

[0167] In the embodiments of the present application, the rough surface may also be other relatively rougher structures. At this time, the rough surface is equivalent to having a plurality of interlaced protrusions and depressions, so that the surface roughness of the rough surface is greater than the roughness of other surfaces of the isolation structure 2. For example, the roughness of the rough surface is greater than the roughness of the surface of the isolation structure 2 on the side facing away from the substrate 1.

[0168] In some embodiments, it is also possible to set the rough surface of the first film layer 2011 to present a serrated or serrated-like morphology. Please refer to Figure 6 , and the first encapsulation layer 3 can be firmly structured with the irregularly arranged serrated structures by physical interlocking.

[0169] Specifically, the serrations forming the rough surface are not completely consistent in size and shape and are irregularly arranged. Among them, the length of the serrations with relatively larger shapes (the distance from the protruding tooth tip to the root formed on the surface) is approximately two to three times that of the serrations with relatively smaller shapes and there is no obvious pattern; the spacing between the serrations is uneven, and the widest spacing is approximately three times the narrowest spacing and there is no obvious pattern; the shapes of the serrations are also irregular. Some serrations are approximately triangular, some are more like trapezoids, and the apex angles of the triangular serrations are also different. The directions of the serrations are irregularly arranged in the direction of the extension of the rough surface as a whole, and the tooth tips of different serrations face randomly and there is no obvious pattern.

[0170] In the embodiments of the present application, the first film layer 2011 with the rough surface described above can be obtained by plasma treating the side wall of the isolation structure 2 facing the isolation opening 201.

[0171] Specifically, at least one of a nitrogen-oxygen mixture and a nitrogen-hydrogen mixture can be used as the plasma to perform plasma treatment on the isolation structure 2 to obtain the first film layer 2011 with a rough surface.

[0172] The plasma ratio can act on the isolation structure 2 by means of ion bombardment, which can roughen some surfaces of the isolation structure 2 on the side facing the isolation opening 201 at the nano-scale or micro-nano scale to obtain a more complex and rough surface morphology, achieving the effect of increasing the side wall surface area of the isolation structure 2; at the same time, the active substances in the plasma (such as nitrogen radicals, hydrogen radicals, etc.) can react with the surface of the isolation structure 2 and form substances with a higher surface energy to further improve the bonding force between the side wall of the isolation structure 2 and the encapsulation unit, and the oxygen radicals can react with the surface of the isolation structure 2 to generate metal oxides, and the surface of the isolation structure 2 on the side facing the isolation opening 201 can be made rougher by using the morphological changes after metal oxidation.

[0173] Specifically, please refer to Figure 4 and Figure 5, a first film layer 2011 with a rough surface is disposed on at least a side of the second isolation sub - portion 212 facing the isolation opening 201. The second isolation sub - portion 212 includes aluminum, so after plasma treatment, the first film layer 2011 includes at least one of aluminum nitride (Al2O3) and aluminum nitride (AlN).

[0174] Aluminum nitride not only has a relatively high surface energy but also has a thermal expansion coefficient substantially consistent with that of the first encapsulation layer 3 constituting the encapsulation unit. At this time, when the temperature changes, the first film layer 2011 and the first encapsulation layer 3 can maintain synchronous contraction and synchronous expansion, thereby reducing the mechanical stress at the connection between the two, and further reducing the possibility of cracks appearing at the connection between the rough surface of the first film layer 2011 and the first encapsulation layer 3 due to stress, making the connection interface between the two more stable, which can further improve the encapsulation tightness and reliability, so as to achieve the effect of extending the service life of the display panel 10.

[0175] Specifically, the material of the first encapsulation layer 3 includes inorganic materials.

[0176] In this embodiment, defining the thermal expansion coefficient of the first film layer 2011 as a and the thermal expansion coefficient of the first encapsulation layer 3 as b, the relationship between the thermal expansion coefficient of the first film layer 2011 and the thermal expansion coefficient of the first encapsulation layer 3 satisfies the following formula:

[0177] [a - b]≤C * 10%;

[0178] Wherein, C is less than or equal to the larger value of a and b.

[0179] Specifically, C can be set as the larger value of a and b, or C can be set as the smaller value of a and b; or C can be set to be less than the smaller value of a and b.

[0180] When the thermal expansion coefficients of the first film layer 2011 and the first encapsulation layer 3 meet the above conditions, the adhesion between the rough surface of the first film layer 2011 and the first encapsulation layer 3 can be effectively improved.

[0181] It should be noted that aluminum nitride also has a certain electrical conductivity. When manufacturing the light - emitting element 4, the second electrode 43 can achieve circuit conduction by overlapping with the first film layer 2011.

[0182] In some embodiments, a second film layer 2012 is disposed on a side of the isolation structure 2 facing the isolation opening 201, and the second film layer 2012 is located on a side of the first film layer 2011 close to the substrate 1; wherein, in a direction perpendicular to the plane where the substrate 1 is located, the positive projection of the first film layer 2011 on the substrate 1 is farther from the center of the isolation opening 201 than the positive projection of the second film layer 2012 on the substrate 1.

[0183] In this embodiment, the second film layer 2012 is disposed on at least a part of the side of the first isolation portion 21 facing the isolation opening 201. Please refer to Figure 4 .

[0184] The first isolation portion 21 of the isolation structure 2 has a first isolation sub-portion 211 and a second isolation sub-portion 212 arranged in a stacked manner. The first film layer 2011 is disposed on at least a part of the side of the second isolation sub-portion 212 facing the isolation opening 201, and the second film layer 2012 is located on the side of the first film layer 2011 close to the substrate 1. Therefore, the second film layer 2012 is disposed on at least a part of the side of the first isolation sub-portion 211 facing the isolation opening 201.

[0185] That is to say, the above-mentioned second film layer 2012 is disposed on at least a part of the side of the first isolation sub-portion 211 facing the isolation opening 201.

[0186] The second film layer 2012 disposed on the side of the first isolation sub-portion 211 facing the isolation opening 201 can be obtained by performing an isotropic treatment on the first isolation sub-portion 211. The first isolation sub-portion 211 includes molybdenum, so the material of the second film layer 2012 includes at least one of molybdenum nitride and molybdenum oxide.

[0187] In this embodiment, the material of the second film layer 2012 includes molybdenum nitride (Mo X N X ) and molybdenum oxide (Mo X O X ).

[0188] Both molybdenum nitride (Mo2N3) and molybdenum oxide (MoO2) have certain electrical conductivity. Therefore, the second electrode 43 in the light-emitting element 4 can achieve circuit conduction by overlapping with the second film layer 2012.

[0189] Since the material of the first isolation sub-portion 211 is different from that of the second isolation sub-portion 212, the surface roughness of the first film layer 2011 obtained after being processed by the same plasma treatment step is different from that of the second film layer 2012.

[0190] In the embodiment of the present application, the roughness of the first film layer 2011 is greater than that of the second film layer 2012.

[0191] In some cases, the second isolation portion 22 located on the side of the isolation structure 2 away from the substrate 1 can form a third connection layer during plasma treatment.

[0192] Specifically, a partial sidewall of the isolation structure 2 facing the isolation opening 201 includes a third connection layer, and the third connection layer is located on a side of the first film layer 2011 facing away from the substrate 1. Among them, in a direction perpendicular to the plane of the substrate 1, the orthographic projection of the first film layer 2011 on the substrate 1 is farther from the center of the isolation opening 201 than the orthographic projection of the third connection layer on the substrate 1.

[0193] Specifically, the third connection layer is disposed on a side of a partial second isolation portion 22 facing the isolation opening 201, and the roughness of the first film layer 2011 is greater than the roughness of the third connection layer.

[0194] It should be noted that, in order to prevent the second isolation portion 22 (including the first isolation sub-portion 211) of the isolation structure 2 from being affected during the plasma treatment process, in this embodiment, by adjusting the materials used for the second isolation portion 22 (including the first isolation sub-portion 211) and the first isolation portion 21 to be different, it is ensured that when a specific plasma is applied to treat the isolation structure 2, the second isolation portion 22 is less affected by the plasma treatment, so as to achieve the effect of specifically treating the second isolation sub-portion 212 of the isolation structure 2 to form the first film layer 2011 with a rough surface.

[0195] The light-emitting element 4 has a first element B, a second element G, and a third element R with different light-emitting colors, and the corresponding isolation openings 201 for accommodating the above-mentioned first element B, second element G, and third element R are prepared in sequence. The isolation opening 201 for accommodating the first element B is defined as the first opening 201a, the isolation opening 201 for accommodating the second element G is defined as the second opening 201b, and the isolation opening 201 for accommodating the third element R is defined as the third opening 201c. Then, the first film layer 2011 can be formed in at least one of the first opening 201a, the second opening 201b, and the third opening 201c.

[0196] Specifically, the first film layer 2011 can be formed in at least one of the second opening 201b and the third opening 201c.

[0197] When the above-mentioned plasma treatment acts on the first opening 201a, the first film layer 2011 can be formed in the first opening 201a. At this time, the first film layer 2011 is disposed on a side of the isolation structure 2 facing the first opening 201a; when the above-mentioned plasma treatment acts on the second opening 201b, the first film layer 2011 can be formed in the second opening 201b. At this time, the first film layer 2011 is disposed on a side of the isolation structure 2 facing the second opening 201b; when the above-mentioned plasma treatment acts on the third opening 201c, the first film layer 2011 can be formed in the third opening 201c. At this time, the first film layer 2011 is disposed on a side of the isolation structure 2 facing the third opening 201c.

[0198] After encapsulating the light-emitting element 4 with the first encapsulation layer 3, it is also necessary to sequentially prepare film layers such as a second encapsulation layer and a third encapsulation layer on the surface of the first encapsulation layer 3 facing away from the substrate 1.

[0199] Specifically, part of the second encapsulation layer is located on the side of the first encapsulation layer 3 facing away from the substrate 1. At least part of the second encapsulation layer is located within the isolation opening 201 to fill the isolation opening 201, and the surface of the second encapsulation layer facing away from the substrate 1 is a flat surface.

[0200] Meanwhile, part of the second encapsulation layer is located between the second encapsulation portion 32 and the isolation opening 201 to fill the gap formed therebetween.

[0201] Specifically, the material of the second encapsulation layer includes organic polymers (such as polyimide, acrylic resin, etc.).

[0202] The second encapsulation layer made of an organic material can be prepared by technologies such as IJP (Ink Jet Printing). Part of the second encapsulation layer can flow into the above-mentioned isolation opening 201, and by filling the isolation opening 201, the flatness of the display panel 10 can be improved, and at the same time, certain protection can be provided for the related film layers located below it.

[0203] The third encapsulation layer is located on the side of the second encapsulation layer facing away from the substrate 1.

[0204] Specifically, the material of the third encapsulation layer can be the same as that of the first encapsulation layer 3, for example, it can be prepared by using an inorganic material.

[0205] It can be understood that the display panel 10 provided by the embodiments of the present application can significantly improve the adhesion and bonding strength with the first encapsulation layer 3 through the first film layer 2011 with a rough surface, so that the encapsulation of the isolation opening 201 by the first encapsulation layer 3 is more firm, preventing moisture in the environment from invading through the gap formed between the isolation structure 2 and the first encapsulation layer 3. Thus, the first encapsulation layer 3 can better encapsulate and protect the light-emitting element 4 located within the isolation opening 201, reducing the problem of display dark spots caused by the failure of the display panel 10 due to moisture invasion, and improving the reliability and yield of the display panel 10; in addition, the isolation structure 2 after plasma treatment also has a higher surface energy and forms aluminum nitride, thereby enhancing the conductive performance of part of the surface of the isolation structure 2, which helps to further optimize the display effect of the display panel 10 and improve the use performance of the display panel 10 to a certain extent.

[0206] Based on the same inventive concept, in the second aspect, the embodiments of the present application also provide a method for manufacturing a display panel 10. Please refer to Figure 7 .

[0207] The preparation method includes:

[0208] Step S1: Prepare an isolation structure 2 on one side of a substrate 1, and the isolation structure 2 encloses to form a plurality of isolation openings 201;

[0209] Step S2: Clean the side wall of the isolation structure 2 facing the isolation opening 201;

[0210] Step S3: Perform plasma treatment on at least part of the side walls after the cleaning treatment to form a first film layer 2011 with a rough surface.

[0211] In the preparation method of the display panel 10 provided in the embodiments of the present application, by performing plasma treatment on at least part of the side walls of the isolation structure 2 after the cleaning treatment, a first film layer 2011 with a rough surface can be formed on the side of the isolation structure 2 facing the isolation opening 201, so as to achieve the effect of increasing the roughness of the surface of the side of the isolation structure 2 facing the isolation opening 201, thereby improving the bonding firmness between the isolation structure 2 and other film layers prepared thereon subsequently, ultimately achieving the purpose of improving the reliability of the display panel 10 and the yield of the display panel 10, and enabling the display panel 10 to have better use performance.

[0212] In some embodiments, in the above step S2, cleaning the side wall of the isolation structure 2 facing the isolation opening 201 includes: cleaning the side wall of the isolation structure 2 facing the isolation opening 201 with an alkaline cleaning solution.

[0213] In step S2, the alkaline cleaning solution used includes tetramethylammonium hydroxide.

[0214] For the actual composition of the isolation structure 2, please refer to the foregoing. Step S2 can be used to remove the etching by-products adhering to the surface of the isolation structure 2 formed in step S1. At the same time, by interacting with the second isolation part 212, the aluminum oxide film on the surface of the second isolation part 212 formed in the isolation structure 2 can be removed, and at the same time, appropriate wet etching is performed on the second isolation part 212, so that the side wall of the second isolation part 212 facing the isolation opening 201 can retreat inward relative to the first isolation part 211 in the direction away from the isolation opening 201, so that part of the surface of the first isolation part 211 on the side facing away from the substrate 1 can be exposed relative to the second isolation part 212, enabling the subsequently prepared light-emitting element 4 to better overlap with the first isolation part 211.

[0215] In some embodiments, in the above step S3, performing plasma treatment on at least part of the side walls after the cleaning treatment to form a first film layer 2011 with a rough surface includes:

[0216] The sidewalls of at least a part after the cleaning treatment are subjected to plasma treatment using a reactive gas, so as to form a first film layer 2011 on the side of the isolation structure 2 facing the isolation opening 201.

[0217] Plasma treatment is a technology for modifying the surface of materials using plasma (i.e., the state in which matter is partially or completely ionized under the action of high temperature, strong electric field or laser). This treatment can generate plasma from inert gas or oxygen-containing gas through methods such as discharge, high-frequency electromagnetic oscillation, shock wave and high-energy radiation, so as to treat the surface to be treated and change its surface properties. In this embodiment, applying plasma treatment to the sidewalls of the isolation structure 2 can roughen the surface of the side of the isolation structure 2 facing the isolation opening 201 by physical bombardment, and at the same time increase the surface energy of the rough surface by chemical reaction, so as to better adhere firmly to the first encapsulation layer 3 prepared by subsequent processes.

[0218] The reactive gas used in step S3 includes at least one of a nitrogen-oxygen mixture and a nitrogen-hydrogen mixture.

[0219] Specifically, the first film layer 2011 includes at least one of aluminum oxide and aluminum nitride.

[0220] In the embodiment of the present application, the preparation method further includes the following preparation steps:

[0221] A light-emitting element 4 is prepared in the isolation opening 201;

[0222] A first encapsulation material layer is prepared on the side of the light-emitting element 4 facing away from the substrate 1;

[0223] The first encapsulation material layer is patterned to form a first encapsulation layer 3 covering the light-emitting element 4.

[0224] Therefore, in the preparation method of the display panel 10 provided by the embodiment of the present application, the prepared display panel 10 further includes a display module. The display module is located on the side of the substrate 1 facing the isolation structure 2 and includes a plurality of light-emitting elements 4. The light-emitting elements 4 are located in the corresponding isolation openings 201. For the convenience of explaining the isolation opening 201 and the light-emitting element 4, it is defined that the isolation opening 201 includes a first opening 201a, a second opening 201b and a third opening 201c, and the light-emitting element 4 includes a first element B, a second element G and a third element R with different emission colors. The first element B is located in the first opening 201a, the second element G is located in the second opening 201b, and the third element R is located in the third opening 201c.

[0225] In the embodiment of the present application, in step S1, an isolation structure 2 is prepared on one side of the substrate 1. The isolation structure 2 encloses a plurality of isolation openings 201, including:

[0226] Step S101: Form an isolation material layer on one side of the substrate 1;

[0227] Step S102: Perform a first patterning process on the isolation material layer to obtain an isolation structure 2 with a first opening 201a;

[0228] Step S103: Fabricate a first element B within the first opening 201a;

[0229] Step S104: Prepare a first encapsulation material layer on the side of the first element B facing away from the substrate 1;

[0230] Step S105: Perform a patterning process on the first encapsulation material layer to form a first encapsulation layer 3 covering the first element B;

[0231] Step S106: Perform a second patterning process on the isolation structure 2 to obtain an isolation structure 2 with a second opening 201b.

[0232] At this time, step S2 includes cleaning the sidewall of the isolation structure 2 facing the second opening 201b.

[0233] Similarly, step S3 includes performing a plasma process on at least a part of the sidewall surrounding the second opening 201b after cleaning to form a first film layer 2011 with a rough surface.

[0234] In this embodiment, after step S106 is completed, steps S2 and S3 can be directly executed in sequence to achieve cleaning and plasma treatment of the surface of the sidewall of the isolation structure 2 facing the second opening 201b, thereby obtaining a rough surface surrounding the second opening 201b. Finally, a second element G can be fabricated within the second opening 201b, and a first encapsulation material layer can be prepared on the side of the second element G facing away from the substrate 1. The first encapsulation layer 3 covering the second element G can be obtained by performing a patterning process on the first encapsulation material layer (using a photoresist pattern as a mask).

[0235] The above preparation process will be described below with reference to the accompanying drawings:

[0236] After obtaining the isolation structure 2 with the first opening 201a, steps S103, S104, and S105 can be executed in sequence to obtain a structure having the first element B and the first encapsulation layer 3 covering the first element B. Please refer to Figure 8A ; Subsequently, step S106 is executed, and a second patterning process is performed on the isolation structure 2 using a photoresist pattern as a mask to obtain the second opening 201b. Please refer to Figure 8B ; Subsequently, steps S2 and S3 are executed in sequence to achieve roughening treatment of the sidewall surrounding the second opening 201b. Please refer toFigure 8C ; Finally, a second component G is prepared within the second opening 201b, and a first encapsulation material layer is formed on the side of the second component G facing away from the substrate 1. The first encapsulation material layer is patterned to obtain a first encapsulation layer 3 covering the second component G. Please refer to Figure 8D .

[0237] In other similar embodiments, the above step S1 includes the following steps:

[0238] Step S101: Form an isolation material layer on one side of the substrate 1;

[0239] Step S102: Perform a first patterning process on the isolation material layer to obtain an isolation structure 2 having a first opening 201a;

[0240] Step S103: Prepare a first component B within the first opening 201a;

[0241] Step S104: Prepare a first encapsulation material layer on the side of the first component B facing away from the substrate 1;

[0242] Step S105: Pattern the first encapsulation material layer to form a first encapsulation layer 3 covering the first component B;

[0243] Step S106: Perform a second patterning process on the isolation structure 2 to obtain an isolation structure 2 having a second opening 201b;

[0244] Step S107: Prepare a second component G within the second opening 201b;

[0245] Step S108: Prepare a first encapsulation material layer on the side of the second component G facing away from the substrate 1;

[0246] Step S109: Pattern the first encapsulation material layer to form a first encapsulation layer 3 covering the second component G;

[0247] Step S110: Perform a third patterning process on the isolation structure 2 to obtain an isolation structure 2 having a third opening 201c.

[0248] At this time, step S2 includes cleaning the side walls of the isolation structure 2 facing the third opening 201c.

[0249] Similarly, step S3 includes plasma-treating at least part of the side walls surrounding the third opening 201c after cleaning to form a first film layer 2011 having a rough surface.

[0250] In this embodiment, after step S110 is completed, steps S2 and S3 can be directly executed to clean and perform plasma treatment on the sidewall surface of the isolation structure 2 facing the third opening 201c, so as to obtain a rough surface surrounding the third opening 201c. Finally, a third element R is fabricated in the third opening 201c, and a first encapsulation material layer is formed on the side of the third element R facing away from the substrate 1. By patterning the first encapsulation material layer (using a photoresist pattern as a mask), a first encapsulation layer 3 covering the third element R is obtained.

[0251] The above fabrication process will be described below with reference to the accompanying drawings:

[0252] After obtaining the isolation structure 2 with the first opening 201a, steps S103, S104, and S105 can be sequentially executed to obtain a structure having the first element B and the first encapsulation layer 3 covering the first element B. Please refer to Figure 8A ; Subsequently, step S106 is executed to perform a second patterning process on the isolation structure 2 using the photoresist pattern as a mask to obtain the second opening 201b. Please refer to Figure 8B , and then steps S107, S108, and S109 are sequentially executed. A second element G is fabricated in the second opening 201b, and a first encapsulation material layer is formed on the side of the second element G facing away from the substrate 1. The first encapsulation material layer is patterned to obtain the first encapsulation layer 3 covering the second element G; then step S110 is executed to perform a third patterning process on the isolation structure 2 using the photoresist pattern as a mask to obtain the third opening 201c; subsequently, steps S2 and S3 are sequentially executed to roughen the sidewall surrounding the third opening 201c; finally, a third element R is fabricated in the third opening 201c, and a first encapsulation material layer is formed on the side of the third element R facing away from the substrate 1. The first encapsulation material layer is patterned to obtain the first encapsulation layer 3 covering the third element R.

[0253] Considering that the sidewall of the second opening 201b for limiting the second element G can also be roughened, in this embodiment, between the above steps S106 and S107, the following steps are further included: The sidewall of the isolation structure 2 facing the second opening 201b is sequentially subjected to a cleaning process and a plasma treatment, and the treatment process is as described above.

[0254] At this time, the above fabrication process is as follows:

[0255] After obtaining the structure as shown in Figure 8B , the sidewall of the isolation structure 2 facing the second opening 201b is subjected to a cleaning process and a plasma treatment to roughen the sidewall surrounding the second opening 201b. Please refer to Figure 8C; Subsequently, steps S107, S108, and S109 are sequentially executed to fabricate a second component G within the second opening 201b, form a first encapsulation material layer on the side of the second component G facing away from the substrate 1, and perform patterning on the first encapsulation material layer to obtain a first encapsulation layer 3 covering the second component G. Please refer to Figure 8D ; Then, step S110 is executed to perform a third patterning process on the isolation structure 2 using the photoresist pattern as a mask to obtain a third opening 201c. Please refer to Figure 8E ; Subsequently, steps S2 and S3 are sequentially executed to roughen the sidewalls surrounding the third opening 201c. Please refer to Figure 8F ; Finally, a third component R is fabricated within the third opening 201c, a first encapsulation material layer is formed on the side of the third component R facing away from the substrate 1, and patterning is performed on the first encapsulation material layer to obtain a first encapsulation layer 3 covering the third component R. Please refer to Figure 8G .

[0256] In some embodiments, before step S103, step S1 further includes the following steps:

[0257] S1021: Clean the sidewalls of the isolation structure 2 facing the first opening 201a;

[0258] S1022: Perform plasma treatment on the sidewalls of the first opening 201a after the cleaning process to form a first film layer 2011 with a rough surface.

[0259] For the actual processing methods of the above steps S1021 and S1022, please refer to the previous text for roughening the circumferential sidewalls of the first opening 201a that limits the first component B.

[0260] In this embodiment, the above steps S1021 and S1022 need to be sequentially executed after step S102, and step S103 is executed after step S1022 is completed.

[0261] In other similar embodiments, step S2 provided in the present application for cleaning the sidewalls of the isolation structure 2 facing the isolation opening 201 includes:

[0262] Step S201: Fabricate a first component B within the first opening 201a;

[0263] Step S202: Prepare a first encapsulation material layer on the side of the first component B facing away from the substrate 1;

[0264] Step S203: Perform patterning on the first encapsulation material layer to form a first encapsulation layer 3 covering the first component B;

[0265] Step S204: Open a second opening 201b in the isolation structure 2;

[0266] Step S205: Clean the side wall of the isolation structure 2 on the side facing the second opening 201b.

[0267] At this time, step S1 includes:

[0268] Step S11: Form an isolation material layer on one side of the substrate 1;

[0269] Step S12: Perform a first patterning process on the isolation material layer to obtain the isolation structure 2 with a first opening 201a.

[0270] Step S2 can be used to clean the first opening 201a and the second opening 201b prepared in sequence respectively.

[0271] Step S3: Perform plasma treatment on at least part of the side walls after the cleaning process to form a first film layer 2011 with a rough surface, including performing plasma treatment on at least part of the side walls around the second opening 201b after cleaning to form a first film layer 2011 with a rough surface.

[0272] In this embodiment, after step S205 is completed, step S3 can be directly executed to implement plasma treatment on the side wall surface of the isolation structure 2 on the side facing the second opening 201b, so as to obtain a rough surface disposed around the second opening 201b. A second element G can be prepared in the second opening 201b, and a first encapsulation material layer can be prepared on the side of the second element G facing away from the substrate 1. The first encapsulation layer 3 covering the second element G can be obtained by patterning the first encapsulation material layer (using a photoresist pattern as a mask).

[0273] The above preparation process will be described below with reference to the drawings:

[0274] After obtaining the isolation structure 2 with the first opening 201a, steps S201, S202, and S203 can be sequentially executed to obtain a structure with a first element B and a first encapsulation layer 3 covering the first element B. Please refer to Figure 8A ; Subsequently, execute step S204, and use the photoresist pattern as a mask to perform a second patterning process on the isolation structure 2 to obtain the second opening 201b. Please refer to Figure 8B ; Subsequently, sequentially execute steps S205 and S3 to achieve roughening treatment of the side walls around the second opening 201b. Please refer to Figure 8C; Finally, a second component G is fabricated within the second opening 201b, and a first encapsulation material layer is formed on the side of the second component G facing away from the substrate 1. The first encapsulation material layer is patterned to obtain a first encapsulation layer 3 covering the second component G. Please refer to Figure 8D 。

[0275] In other similar embodiments, step S2 includes the following steps:

[0276] Step S201: Fabricate a first component B within the first opening 201a;

[0277] Step S202: Prepare a first encapsulation material layer on the side of the first component B facing away from the substrate 1;

[0278] Step S203: Pattern the first encapsulation material layer to form a first encapsulation layer 3 covering the first component B;

[0279] Step S204: Open a second opening 201b in the isolation structure 2;

[0280] Step S207: Fabricate a second component G within the second opening 201b;

[0281] Step S208: Prepare a first encapsulation material layer on the side of the second component G facing away from the substrate 1;

[0282] Step S209: Pattern the first encapsulation material layer to form a first encapsulation layer 3 covering the second component G;

[0283] Step S210: Open a third opening 201c in the isolation structure 2;

[0284] Step S211: Clean the sidewall of the isolation structure 2 facing the third opening 201c.

[0285] At this time, step S1 includes:

[0286] Step S11: Form an isolation material layer on one side of the substrate 1;

[0287] Step S12: Perform a first patterning process on the isolation material layer to obtain an isolation structure 2 with a first opening 201a.

[0288] Step S2 can be used to clean the first opening 201a, the second opening 201b, and the third opening 201c prepared in sequence.

[0289] Step S3: Perform plasma treatment on at least part of the sidewalls after the cleaning process to form a first film layer 2011 with a rough surface, including performing plasma treatment on at least part of the sidewalls surrounding the third opening 201c after cleaning to form a first film layer 2011 with a rough surface.

[0290] In this embodiment, the method for manufacturing the display panel 10 further includes:

[0291] Step S4: Fabricate a third element R within the third opening 201c;

[0292] Step S5: Fabricate a first encapsulation material layer on the side of the third element R facing away from the substrate 1;

[0293] Step S6: Perform patterning on the first encapsulation material layer to form a first encapsulation layer 3 covering the third element R.

[0294] In this embodiment, after step S211 is completed, step S3 can be directly executed to achieve the cleaning and plasma treatment of the sidewall surface of the isolation structure 2 facing the third opening 201c, thereby obtaining a rough surface disposed around the third opening 201c. Finally, steps S4, S5, and S6 are sequentially executed to fabricate a third element R within the third opening 201c and fabricate a first encapsulation material layer on the side of the third element R facing away from the substrate 1, and a first encapsulation layer 3 covering the third element R is obtained by patterning the first encapsulation material layer (using a photoresist pattern as a mask).

[0295] The above manufacturing process will be described below with reference to the accompanying drawings:

[0296] After obtaining the isolation structure 2 with the first opening 201a, steps S201, S202, and S203 can be sequentially executed to obtain a structure having a first element B and a first encapsulation layer 3 covering the first element B. Please refer to Figure 8A ; Subsequently, step S204 is executed to perform a second patterning process on the isolation structure 2 using a photoresist pattern as a mask to obtain a second opening 201b. Please refer to Figure 8B, then steps S207, S208, and S209 are sequentially executed to fabricate a second component G within the second opening 201b, and a first encapsulation material layer is formed on the side of the second component G facing away from the substrate 1. The first encapsulation material layer is patterned to obtain a first encapsulation layer 3 covering the second component G. Then, step S210 is executed to perform a third patterning process on the isolation structure 2 using the photoresist pattern as a mask to obtain a third opening 201c. Subsequently, steps S211 and S3 are sequentially executed to roughen the sidewalls surrounding the third opening 201c. Finally, a third component R is fabricated within the third opening 201c, and a first encapsulation material layer is formed on the side of the third component R facing away from the substrate 1. The first encapsulation material layer is patterned to obtain a first encapsulation layer 3 covering the third component R.

[0297] Considering that the sidewalls of the second opening 201b for limiting the second component G can also be roughened, in this embodiment, between the above steps S204 and S207, the following steps are further included:

[0298] Step S205: Clean the sidewalls of the isolation structure 2 facing the second opening 201b.

[0299] Step S206: Perform plasma treatment on the sidewalls of the second opening 201b after the cleaning treatment to form a first film layer 2011 with a rough surface.

[0300] Steps S205 and S206 are used to sequentially perform a cleaning treatment and a plasma treatment on the sidewalls of the isolation structure 2 facing the second opening 201b. For the treatment process, please refer to the previous text.

[0301] At this time, the above fabrication process is as follows:

[0302] After obtaining the structure as shown in Figure 8B , steps S205 and S206 are applied to perform a cleaning treatment and a plasma treatment on the sidewalls of the isolation structure 2 facing the second opening 201b to roughen the sidewalls surrounding the second opening 201b. Please refer to Figure 8C ; Subsequently, steps S207, S208, and S209 are sequentially executed to fabricate a second component G within the second opening 201b, and a first encapsulation material layer is formed on the side of the second component G facing away from the substrate 1. The first encapsulation material layer is patterned to obtain a first encapsulation layer 3 covering the second component G. Please refer to Figure 8D ; Then step S210 is executed to perform a third patterning process on the isolation structure 2 using the photoresist pattern as a mask to obtain a third opening 201c. Please refer to Figure 8E; Subsequently, steps S211 and S3 are sequentially executed to achieve roughening treatment of the sidewall around the third opening 201c. Please refer to Figure 8F ; Finally, a third element R is prepared in the third opening 201c, and a first encapsulation material layer is formed on the side of the third element R facing away from the substrate 1. The first encapsulation material layer is patterned to obtain a first encapsulation layer 3 covering the third element R. Please refer to Figure 8G .

[0303] In this embodiment, before step S201, step S2 further includes the following steps:

[0304] S2001. Clean the sidewall of the isolation structure 2 facing the first opening 201a;

[0305] S2002. Perform plasma treatment on the sidewall of the first opening 201a after the cleaning treatment to form a first film layer 2011 with a rough surface.

[0306] For the actual processing methods of the above steps S2001 and S2002, please refer to the foregoing for roughening treatment of the circumferential sidewall of the first opening 201a that limits the first element B.

[0307] In this embodiment, after step S1 is completed, the above steps S2001 and S2002 need to be sequentially executed, and after step S2002 is executed, step S201 is executed.

[0308] It can be understood that the manufacturing method of the display panel 10 provided by the embodiments of the present application can manufacture a display panel 10 with better use performance. The display panel 10 can significantly improve the adhesion and bonding strength with the first encapsulation layer 3 through the first film layer 2011 with a rough surface, so that the encapsulation of the first encapsulation layer 3 for the isolation opening 201 is more firm, preventing moisture in the environment from invading through the gap formed between the isolation structure 2 and the first encapsulation layer 3, so that the first encapsulation layer 3 can better encapsulate and protect the light-emitting element 4 located in the isolation opening 201, reducing the display dark spot problem caused by the failure of the display panel 10 due to moisture invasion, and improving the reliability and yield of the display panel 10; in addition, the isolation structure 2 after plasma treatment also has a higher surface energy and forms aluminum nitride, thereby enhancing the electrical conductivity of part of the surface of the isolation structure 2, which helps to further optimize the display effect of the display panel 10 and improve the use performance of the display panel 10 to a certain extent.

[0309] Based on the same inventive concept, in a third aspect, the embodiments of the present application also provide a display device 100. Please refer to Figure 9The display device 100 includes the display panel 10 described in any one of the above, or includes the display panel 10 prepared by the preparation method described in any one of the above.

[0310] The display device 100 provided in this embodiment may be a mobile phone, a notebook, a tablet computer, a smart watch, a smart bracelet, a navigator, a display, a personal digital assistant (PDA for short), or other products or components with a display function. Since the display panel 10 in the display device 100 has the beneficial effects of any one or several of the above display panels 10, for the specific effects, refer to the specific descriptions in the foregoing embodiments and will not be elaborated herein.

[0311] The foregoing is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included within the protection scope of the present application.

Claims

1. A display panel, characterized in that, Comprising: A substrate (1); An isolation structure (2), located on one side of the substrate (1), the isolation structure (2) enclosing to form a plurality of isolation openings (201), a first film layer (2011) being provided on a side of the isolation structure (2) facing the isolation openings (201), and a surface of the first film layer (2011) facing the isolation openings (201) having a rough surface; Wherein, the material of the first film layer (2011) is different from the material of the isolation structure (2).

2. The display panel according to claim 1, wherein The isolation structure (2) includes a first isolation portion (21) and a second isolation portion (22) arranged in a stacked manner, the second isolation portion (22) being located on a side of the first isolation portion (21) facing away from the substrate (1), and the first isolation portion (21) and the second isolation portion (22) enclosing to form the isolation openings (201); Wherein, a positive projection of the first isolation portion (21) on the substrate (1) is located within a positive projection of the second isolation portion (22) on the substrate (1); The first isolation portion (21) includes a first isolation sub-portion (211) and a second isolation sub-portion (212), the second isolation sub-portion (212) being located on a side of the first isolation sub-portion (211) facing away from the substrate (1); Wherein, a positive projection of the second isolation sub-portion (212) on the substrate (1) is located within a positive projection of the first isolation sub-portion (211) on the substrate (1); Preferably, a positive projection of an end of the second isolation sub-portion (212) close to the second isolation portion (22) on the substrate (1) is located within a positive projection of an end of the second isolation sub-portion (212) close to the first isolation sub-portion (211) on the substrate (1); Preferably, the material of the second isolation sub-portion (212) is different from the material of the first film layer (2011); Preferably, the material of the first isolation sub-portion (211) includes molybdenum; Preferably, the material of the second isolation sub-portion (212) includes aluminum; Preferably, the material of the second isolation portion (22) includes titanium.

3. The display panel according to claim 2, wherein At least a part of the first isolation portion (21) is provided with the first film layer (2011) on a side facing the isolation openings (201); Preferably, the first film layer (2011) is provided on at least a part of the second isolation sub-portion (212) on a side facing the isolation openings (201); Preferably, the first film layer (2011) includes alumina and / or aluminum nitride.

4. The display panel according to claim 2, characterized in that, A second film layer (2012) is provided on a side of the isolation structure (2) facing the isolation openings (201), the second film layer (2012) being located on a side of the first film layer (2011) close to the substrate (1); Wherein, in a direction perpendicular to a plane where the substrate (1) is located, a positive projection of the first film layer (2011) on the substrate (1) is farther from a center of the isolation openings (201) than a positive projection of the second film layer (2012) on the substrate (1). Preferably, the roughness of the first film layer (2011) is greater than the roughness of the second film layer (2012).

5. The display panel according to claim 4, wherein The second film layer (2012) is disposed on at least a part of the side of the first isolation portion (21) facing the isolation opening (201); Preferably, the second film layer (2012) is disposed on at least a part of the side of the first isolation sub-portion (211) facing the isolation opening (201); Preferably, the second film layer (2012) includes at least one of molybdenum nitride and molybdenum oxide.

6. The display panel according to any one of claims 1-5, characterized in that, The rough surface has a concavo-convex structure; Preferably, the concavo-convex structure includes at least one of pits and grooves; Preferably, the concavo-convex structure includes a plurality of recesses and protrusions arranged at intervals, and in a direction perpendicular to the rough surface, the minimum distance between the recess and the protrusion is greater than or equal to 3 nm.

7. The display panel according to any one of claims 1-5, characterized in that, The display panel (10) further includes a first encapsulation layer (3), the first encapsulation layer (3) includes an encapsulation unit corresponding to the isolation opening (201), and the encapsulation unit is partially located in the isolation opening (201) and covers the rough surface.

8. The display panel according to claim 7, characterized in that, The relationship between the coefficient of thermal expansion of the first film layer (2011) and the coefficient of thermal expansion of the first encapsulation layer (3) satisfies: [a - b] ≤ C * 10%; wherein, a is the coefficient of thermal expansion of the first film layer (2011), b is the coefficient of thermal expansion of the first encapsulation layer (3), and C is less than or equal to the larger value of a and b; Preferably, C is the larger value of a and b, or C is the smaller value of a and b; or C is less than the smaller value of a and b.

9. The display panel according to claim 7, wherein The display panel (10) further includes a display module, the display module is located on the side of the substrate (1) facing the isolation structure (2) and includes a plurality of light-emitting elements (4), and the light-emitting elements (4) are located in the corresponding isolation openings (201); Preferably, the light-emitting element (4) includes a first electrode (41), a light-emitting functional layer (42), and a second electrode (43) stacked; Preferably, the second electrode (43) is overlapped with the side wall of the isolation structure (2) on the side facing the isolation opening (201); Preferably, the light-emitting element (4) has a first element, a second element, and a third element with different light-emitting colors, the isolation opening (201) includes a first opening (201a), a second opening (201b), and a third opening (201c), the first opening (201a) is used to accommodate the first element, the second opening (201b) is used to accommodate the second element, and the third opening (201c) is used to accommodate the third element; the first film layer (2011) is disposed on at least one side of the isolation structure (2) facing the first opening (201a), the second opening (201b), and the third opening (201c); Preferably, the first film layer (2011) is disposed on at least one side of the isolation structure (2) facing the second opening (201b) and the third opening (201c); Preferably, the display panel (10) further includes a pixel definition layer (5), the pixel definition layer (5) is located between the substrate (1) and the isolation structure (2), the pixel definition layer (5) is provided with a plurality of pixel openings (501), and the pixel openings (501) expose the first electrode (41) of the light-emitting element (4); Wherein, the pixel opening (501) is correspondingly arranged and communicated with the isolation opening (201), and the orthographic projection of the pixel opening (501) on the substrate (1) is located within the orthographic projection of the isolation opening (201) on the substrate (1); Preferably, the first electrode (41) is located between the substrate (1) and the pixel definition layer (5), at least part of the surface of the first electrode (41) on the side facing away from the substrate (1) is exposed through the pixel opening (501), the light-emitting functional layer (42) covers the pixel opening (501) and is in contact with the first electrode (41), and the second electrode (43) covers the surface of the light-emitting functional layer (42) on the side facing away from the substrate (1).

10. The display panel according to claim 9, wherein The encapsulation unit includes: A first encapsulation part (31), located on the side of the light-emitting element (4) facing away from the substrate (1); A second encapsulation part (32), located on the side of the isolation structure (2) facing away from the substrate (1); A third encapsulation part (33), covering the side wall of the isolation structure (2) on the side facing the isolation opening (201), and connecting the first encapsulation part (31) and the second encapsulation part (32); Wherein, the third encapsulation part (33) covers the rough surface; Preferably, along the direction perpendicular to the plane where the substrate (1) is located, there is a gap between the second encapsulation part (32) and the side surface of the isolation structure (2) facing away from the substrate (1); Preferably, the material of the first encapsulation layer (3) includes an inorganic material.

11. A method for preparing a display panel, characterized in that, Including: Preparing an isolation structure (2) on one side of the substrate (1), and the isolation structure (2) encloses a plurality of isolation openings (201); Cleaning the side wall of the isolation structure (2) on the side facing the isolation opening (201); Performing plasma treatment on at least part of the side wall after the cleaning treatment to form a first film layer (2011) with a rough surface.

12. The manufacturing method of the display panel according to claim 11, characterized in that, The step of performing plasma treatment on at least part of the side wall after the cleaning treatment to form a first film layer (2011) with a rough surface includes: Performing plasma treatment on at least part of the side wall after the cleaning treatment with a reaction gas to form the first film layer (2011) on the side of the isolation structure (2) facing the isolation opening (201); Wherein, the reaction gas includes at least one of a nitrogen-oxygen mixture and a nitrogen-hydrogen mixture; Preferably, the first film layer (2011) includes aluminum oxide and / or aluminum nitride.

13. The manufacturing method of the display panel according to claim 11, characterized in that, The step of cleaning the side wall of the isolation structure (2) on the side facing the isolation opening (201) includes: Clean the side wall of the isolation structure (2) facing the isolation opening (201) with an alkaline cleaning solution; Among them, the alkaline cleaning solution includes tetramethylammonium hydroxide.

14. The manufacturing method of the display panel according to claim 11, wherein, The display panel (10) further includes a display module, the display module is located on the side of the substrate (1) facing the isolation structure (2) and includes a plurality of light-emitting elements (4), and the light-emitting elements (4) are located in the corresponding isolation openings (201); The isolation opening (201) includes a first opening (201a), a second opening (201b) and a third opening (201c), the light-emitting elements (4) include a first element, a second element and a third element with different emission colors, and the step of preparing the isolation structure (2) on one side of the substrate (1), the isolation structure (2) enclosing a plurality of isolation openings (201), includes: Form an isolation material layer on one side of the substrate (1); Perform a first patterning process on the isolation material layer to obtain the isolation structure (2) provided with the first opening (201a); Prepare a first element in the first opening (201a); Prepare a first encapsulation material layer on the side of the first element facing away from the substrate (1); Perform a patterning process on the first encapsulation material layer to form a first encapsulation layer (3) covering the first element; Perform a second patterning process on the isolation structure (2) to obtain the isolation structure (2) provided with the second opening (201b).

15. The method for manufacturing a display panel according to claim 14, wherein The step of preparing the isolation structure (2) on one side of the substrate (1), the isolation structure (2) enclosing a plurality of isolation openings (201), further includes: Prepare the second element in the second opening (201b); Prepare a first encapsulation material layer on the side of the second element facing away from the substrate (1); Perform a patterning process on the first encapsulation material layer to form a first encapsulation layer (3) covering the second element; Perform a third patterning process on the isolation structure (2) to obtain the isolation structure (2) provided with the third opening (201c).

16. The method for manufacturing a display panel according to claim 11, wherein, The display panel (10) further includes a display module, the display module is located on the side of the substrate (1) facing the isolation structure (2) and includes a plurality of light-emitting elements (4), and the light-emitting elements (4) are located in the corresponding isolation openings (201); The isolation opening (201) includes a first opening (201a), a second opening (201b) and a third opening (201c), the light-emitting elements (4) include a first element, a second element and a third element with different emission colors, and the step of cleaning the side wall of the isolation structure (2) facing the isolation opening (201) includes: Prepare the first element in the first opening (201a); Prepare a first encapsulation material layer on the side of the first element facing away from the substrate (1); Perform a patterning process on the first encapsulation material layer to form a first encapsulation layer (3) covering the first element; Form the second opening (201b) in the isolation structure (2); Clean the side wall of the isolation structure (2) on the side facing the second opening (201b).

17. The method for manufacturing a display panel according to claim 16, wherein The step of cleaning the side wall of the isolation structure (2) on the side facing the isolation opening (201) further includes: Perform plasma treatment on the side wall of the second opening (201b) after the cleaning treatment to form a first film layer (2011) with a rough surface; Fabricate the second component in the second opening (201b); Fabricate a first encapsulation material layer on the side of the second component facing away from the substrate (1); Perform patterning on the first encapsulation material layer to form a first encapsulation layer (3) covering the second component; Form the third opening (201c) in the isolation structure (2); Clean the side wall of the isolation structure (2) on the side facing the third opening (201c).

18. The manufacturing method of the display panel according to claim 17, wherein, The step of performing plasma treatment on at least part of the side wall after the cleaning treatment to form a first film layer (2011) with a rough surface includes: Perform plasma treatment on the side wall of the third opening (201c) after the cleaning treatment to form a first film layer (2011) with a rough surface; Preferably, the manufacturing method further includes: Fabricate the third component in the third opening (201c); Fabricate a first encapsulation material layer on the side of the third component facing away from the substrate (1); Perform patterning on the first encapsulation material layer to form a first encapsulation layer (3) covering the third component.

19. The manufacturing method of the display panel according to any one of claims 14-18, characterized in that, Before the step of fabricating the first component in the first opening (201a), it includes: Clean the side wall of the isolation structure (2) on the side facing the first opening (201a); Perform plasma treatment on the side wall of the first opening (201a) after the cleaning treatment to form a first film layer (2011) with a rough surface.

20. A display device, characterized in that, Include the display panel (10) according to any one of claims 1-11, or, include the display panel (10) prepared by the manufacturing method according to any one of claims 12-19.

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