Semiconductor chip laser bonding device
By designing laser oscillating and non-oscillating regions in the laser bonding device and combining the reciprocating movement of the horizontal transfer module, the substrate warping problem is solved, and the stable bonding between the semiconductor chip and the printed circuit board is achieved.
Patent Information
- Application Number
- CN202380087030.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2022-12-30
- Filing Date
- 2023-12-29
- Publication Date
- 2025-07-25
AI Technical Summary
When the existing laser bonding method bonds semiconductor chips to printed circuit board substrates, it is easy to cause substrate warping and thermal stress problems, especially in the case of miniaturized chips and thin substrates, the warping phenomenon is more significant.
The laser irradiation module is designed, including a laser oscillation area and a non-oscillation area. The horizontal transfer module is used to move the laser irradiation module back and forth along the substrate surface, and combined with the grid-like arrangement of the vertical cavity surface emitting laser devices to achieve uniform laser irradiation and temperature control.
It effectively prevents the substrate from warping, achieves uniform laser bonding, reduces temperature deviation, and ensures stable bonding between the semiconductor chip and the substrate.
Smart Images
Figure CN120380592A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a semiconductor chip laser bonding device for laser bonding a semiconductor chip to a bonding substrate. Background Art
[0002] Methods for bonding a semiconductor chip (or die chip) to a substrate include a wire bonding method using wires and a reflow method using solder bumps. In recent years, with the trend of miniaturization of semiconductor chips, the reflow method using solder bumps has been widely used. The reflow method includes a heat reflow method and a laser bonding method. The heat reflow method heats at a high temperature in a state where the solder bumps and the semiconductor chip are disposed on the substrate, and the laser bonding method irradiates a laser beam onto the upper part of the semiconductor chip in a state where the solder bumps and the semiconductor chip are disposed on the substrate. The substrate may use a wafer or a printed circuit board (PCB) substrate.
[0003] In recent years, with the development of semiconductor production technology, the demand for high-performance semiconductor chips has been increasing. Also, as the number of input / output (I / O) terminals of high-performance semiconductor chips increases, the bump pitch tends to decrease. As the bump pitch decreases, warpage and thermal stress in the reflow step are becoming major problems, and the laser bonding method has been proposed as a method for solving warpage.
[0004] A laser bonding device for the laser bonding method generally uses an optical system to irradiate a laser beam. Therefore, the irradiation range of the laser beam is limited to 80 mm × 80 mm. A printed circuit board substrate applied to the laser bonding method is generally rectangular with a size of 300 mm × 150 mm, and the laser beam needs to be irradiated approximately 6 times in the laser bonding step. Therefore, due to the non-continuous irradiation of the laser beam, the possibility of warpage of the printed circuit board substrate will increase. Also, since the thicknesses of the semiconductor chip and the printed circuit board substrate tend to become thinner, there is a possibility of deformation of the semiconductor chip and the printed circuit board substrate in the laser bonding step. Summary of the Invention
[0005] Technical Problem
[0006] An object of the present invention is to provide a semiconductor chip laser bonding device that can prevent warpage of a printed circuit board substrate in a laser bonding step of a semiconductor chip.
[0007] Technical Solution
[0008] The semiconductor chip laser bonding device of the present invention is characterized in that it includes: a laser irradiation module having a laser oscillation region and a laser non-oscillation region, the laser oscillation region extending along a first direction and spaced apart along a second direction for oscillating a laser beam, and the laser non-oscillation region being located between the laser oscillation regions and not oscillating the laser beam; and a horizontal transfer module for moving the laser irradiation module along the second direction. When the laser irradiation module irradiates a laser beam on the upper surface of a bonding substrate on which a semiconductor chip is placed, the horizontal transfer module reciprocates the laser irradiation module along the second direction.
[0009] Furthermore, the semiconductor chip laser bonding device may further include a bonding cavity, which includes: a cavity housing in a box shape that houses the bonding substrate therein, having a laser through-hole formed in the upper plate of the cavity housing above the bonding substrate; a substrate support table for supporting the bonding substrate inside the cavity housing; and a laser transmissive plate combined with the laser through-hole.
[0010] Furthermore, the cavity housing may further include: a substrate inlet for allowing the bonding substrate to enter from one side wall; a substrate outlet for allowing the bonding substrate to exit from the other side wall; a gas inlet hole for allowing a transfer gas to flow into the interior; and a gas outlet hole for discharging the transfer gas from the interior.
[0011] Furthermore, the laser irradiation module may be formed by arranging vertical cavity surface emitting laser (VCSEL) devices in a grid pattern on the lower surface of a device arrangement plate. The vertical cavity surface emitting laser device includes a device region and a terminal region. A laser emitting unit for oscillating the laser beam is installed in the device region, and a terminal for supplying power to the laser emitting unit is installed in the terminal region. The device region forms the laser oscillation region, and the terminal region forms the laser non-oscillation region.
[0012] Furthermore, the width of the laser oscillation region may be greater than the width of the laser non-oscillation region, and the horizontal transfer module reciprocates the laser irradiation module at a distance greater than the width of the laser non-oscillation region.
[0013] Furthermore, the horizontal transfer module may include: a horizontal transfer support plate located at the rear side of the laser irradiation module; two horizontal transfer guide rails fixed to the front surface of the horizontal transfer support plate at intervals in the vertical direction so as to extend in the horizontal direction; a horizontal transfer block combined with the horizontal transfer guide rails and the laser irradiation module; a horizontal transfer mechanism for reciprocating the horizontal transfer block; and a horizontal transfer support column located at the rear side of the horizontal transfer support plate and combined with the horizontal transfer support plate.
[0014] Furthermore, the horizontal transfer mechanism may include: a horizontal ball screw, combined with the horizontal transfer block, for moving the horizontal transfer block; and a horizontal servo motor, combined with the horizontal ball screw.
[0015] Furthermore, the semiconductor chip laser bonding device may further include a vertical transfer module, combined with the horizontal transfer module, for moving the horizontal transfer module up and down.
[0016] Effects of the Invention
[0017] Even when applying a large-area laser irradiation module for arranging vertical cavity surface emitting laser devices, the semiconductor chip laser bonding device of the present invention can prevent warping of the printed circuit board substrate in the step of bonding the semiconductor chip to the printed circuit board substrate.
[0018] Furthermore, the semiconductor chip laser bonding device of the present invention can reduce the temperature deviation of the printed circuit board substrate caused by the terminal region and the resulting warping generated in the step of arranging the vertical cavity surface emitting laser devices by reciprocating the laser irradiation module along a single direction.
[0019] Furthermore, even when the bump pitch of the bonding substrate is small, the semiconductor chip bonding device can irradiate the laser beam uniformly as a whole, thereby bonding the semiconductor chip to the bonding substrate with uniform characteristics. Brief Description of the Drawings
[0020] Figure 1 It is a front view of a semiconductor chip laser bonding device according to an embodiment of the present invention.
[0021] Figure 2 Based on Figure 1 It is a vertical cross-sectional view taken along line A-A in
[0022] Figure 3 Based on Figure 2 It is a vertical cross-sectional view taken along line B-B in
[0023] Figure 4 It is Figure 3 a bottom view of the laser irradiation module in
[0024] Figure 5 It is Figure 4 a partial perspective view of the vertical cavity surface emitting laser device in
[0025] Figure 6 Based on Figure 5 It is a vertical cross-sectional view taken along line C-C in
[0026] Figure 7 It is Figure 2 a partial enlarged view of part "D" in Detailed Implementation Manner
[0027] Hereinafter, the semiconductor chip laser bonding device of the present invention will be described in more detail with reference to embodiments and the accompanying drawings.
[0028] First, a semiconductor chip laser bonding device according to an embodiment of the present invention will be described.
[0029] Figure 1 is a front view of a semiconductor chip laser bonding device according to an embodiment of the present invention. Figure 2 is based on Figure 1 a vertical cross-sectional view taken along line A-A in Figure 3 is based on Figure 2 a vertical cross-sectional view taken along line B-B in Figure 4 is Figure 3 a bottom view of the laser irradiation module in Figure 5 is Figure 4 a partial perspective view of the vertical cavity surface emitting laser device in Figure 6 is based on Figure 5 a vertical cross-sectional view taken along line C-C in Figure 7 is Figure 2 a partially enlarged view of part "D" in
[0030] Referring to Figures 1 to 7 , a semiconductor chip laser bonding device 10 according to an embodiment of the present invention may include a bonding cavity 100, a laser irradiation module 200, and a horizontal transfer module 300. The semiconductor chip laser bonding device 10 may further include a vertical transfer module 400. And, although not specifically shown in the drawings, the semiconductor chip laser bonding device 10 may include: a substrate supply module for transferring a bonding substrate a to be laser-bonded into the interior of the bonding cavity 100; and a substrate recovery module for transferring the bonded bonding substrate a out of the bonding cavity 100.
[0031] In the semiconductor chip laser bonding device 10, the laser irradiation module 200 may irradiate a laser beam onto the upper part of the bonding substrate a transferred to a bonding position set inside the bonding cavity 100. And, during the bonding step, the semiconductor chip laser bonding device 10 may cause the horizontal transfer module 300 to reciprocally move the laser irradiation module 200 in the horizontal direction. The bonding substrate a may be a rectangular printed circuit board substrate having a width and a length. And, the bonding substrate a may be a rectangular glass substrate having a width and a length or a circular semiconductor wafer having a diameter. The bonding substrate a forms a pattern of various conductive pads on its upper surface, and solder bumps may be placed on the conductive pads. And, a semiconductor chip may be located above the bonding substrate a, and the semiconductor chip has die pads electrically connected to the conductive pads and the solder bumps.
[0032] The semiconductor chip laser bonding device 10 can irradiate a laser beam uniformly onto the bonding substrate a, thereby preventing warping caused by non-uniform heating of the bonding substrate a. Moreover, even when the bump pitch of the bonding substrate a is minute, the semiconductor chip laser bonding device can irradiate the laser beam uniformly as a whole. Therefore, the semiconductor chip laser beam bonding device can bond a semiconductor chip to the bonding substrate a with uniform characteristics. The semiconductor chip laser bonding device 10 can heat the bonding substrate a at a rate of 100 °C / s by the laser beam irradiated from the laser irradiation module 200 onto the bonding substrate a.
[0033] In the semiconductor chip laser bonding device 10, the laser irradiation module 200 can irradiate a laser beam simultaneously onto an irradiation area of 300 mm × 300 mm, and thus, the bonding process can be effectively carried out. Moreover, the semiconductor chip laser bonding device 10 does not use a separate optical system, and thus, the structure of the device can be simpler. Also, the semiconductor chip laser bonding device 10 irradiates the laser beam simultaneously onto the irradiation area of the laser beam to carry out the bonding process, and thus, the bonding substrate a can be heated more uniformly.
[0034] Moreover, in the semiconductor chip bonding device, the laser bonding space where laser bonding is performed is separated from the space where the laser irradiation module 200 is located. Also, the semiconductor chip bonding device can supply and discharge transfer gas to the inside of the bonding cavity 100. Therefore, the semiconductor chip bonding device can prevent the bonding fumes generated in the laser bonding step from contaminating the inside of the laser irradiation module 200 and the bonding cavity 100.
[0035] The bonding cavity 100 can include a cavity housing 110, a substrate support table 120, and a laser transmissive plate 130. The bonding cavity 100 can provide a space for placing the bonding substrate a and performing the laser bonding step.
[0036] The cavity housing 110 can include a substrate inlet 111, a substrate outlet 112, and a laser through hole 113. Also, the cavity housing 110 can further include a gas inlet hole 114 and a gas outlet hole 115.
[0037] The cavity housing 110 can be in a box shape with a bonding space formed inside. For example, the cavity housing 110 can be in a hexahedron shape including a side wall 110a and another side wall 110b, a front side wall 110c and a rear side wall 110d, and an upper plate 110e and a lower plate 110f. The cavity housing 110 can provide a space inside for accommodating the substrate support table 120 for supporting the bonding substrate a.
[0038] The substrate inlet 111 may be formed through one side wall of the cavity housing 110. The shape of the substrate inlet 111 may correspond to the shape of the vertical cross-section of the bonding substrate a. The area of the substrate inlet 111 may be at least larger than the area of the vertical cross-section of the bonding substrate a. For example, the substrate inlet 111 may have a height greater than the thickness of the bonding substrate a and a width greater than the width of the bonding substrate a. The substrate inlet 111 may be formed at a position on one side wall of the cavity housing 110 where the height is the same as the height of the substrate support table 120. The substrate inlet 111 may provide a path for the bonding substrate a to enter and be placed on the upper surface of the substrate support table 120.
[0039] The substrate outlet 112 may be formed through the other side wall of the cavity housing 110. The substrate outlet 112 may face the substrate inlet 111 and have the same or similar shape. The shape of the substrate outlet 112 may correspond to the shape of the vertical cross-section of the bonding substrate a. The area of the substrate outlet 112 may be at least larger than the area of the vertical cross-section of the bonding substrate a. For example, the substrate outlet 112 may have a height greater than the thickness of the bonding substrate a and a width greater than the width of the bonding substrate a. The substrate outlet 112 may be formed at a position on one side wall of the cavity housing 110 where the height is the same as the height of the substrate support table 120. The substrate outlet 112 may provide a path for the bonding substrate a bonded with semiconductor chips to exit.
[0040] The laser through-hole 113 may be formed through the upper plate of the cavity housing 110. The shape of the laser through-hole 113 may correspond to the shape of the bonding substrate a or the substrate support table 120. And, the area of the laser through-hole 113 may be larger than the planar area of the bonding substrate a. And, the area of the laser through-hole 113 may be the same as the area of the substrate support table 120. The laser through-hole 113 may be located above the bonding substrate a. The laser through-hole 113 may provide a path for the laser beam oscillated by the laser irradiation module 200 located above the cavity housing 110 to irradiate the upper surface of the bonding substrate a.
[0041] The gas inlet hole 114 may be formed through any one side wall of the cavity housing 110. Preferably, the gas inlet hole 114 may be formed at a position on the side wall where the substrate outlet 112 is formed and at a height the same as or higher than the substrate outlet 112. The gas inlet hole 114 may provide a channel for the transfer gas for transferring the bonding fumes generated in the laser bonding step to flow in. The transfer gas may be an inert gas such as nitrogen or argon.
[0042] The gas discharge hole 115 may be formed in a side wall of the cavity housing 110 corresponding to the side wall where the gas inlet hole 114 is formed. For example, the gas discharge hole 115 may be formed in one side wall of the cavity housing 110. Also, the gas discharge hole 115 may be formed in the lower part of the side wall of the cavity housing 110. The gas discharge hole 115 may provide a passage for discharging the transfer gas mixed with bonding fumes to the outside of the cavity housing 110.
[0043] The substrate support table 120 may include a support table body 121. Also, the substrate support table 120 may further include a body support rod 122. The substrate support table 120 may support the bonding substrate a by being located inside the cavity housing 110. The height of the upper surface of the substrate support table 120 may be the same as the height of the substrate inlet 111. Thus, the substrate support table 120 may stably support the bonding substrate a entering through the substrate inlet 111. Also, the substrate support table 120 may heat the bonding substrate a to a predetermined bonding temperature. The bonding temperature may be 150°C to 350°C.
[0044] Although not specifically shown in the drawings, the substrate support table 120 may further include a thimble for transferring the bonding substrate a placed on the upper surface of the support table body 121 upward. The thimble may be a conventional thimble for a pedestal in a semiconductor manufacturing apparatus.
[0045] The support table body 121 may be a disk-shaped or rectangular plate-shaped block. The support table body 121 may place and support the bonding substrate a on its upper surface. Thus, the support table body 121 may have a thickness required to stably support the bonding substrate a. Also, the inside of the support table body 121 may include a heating wire or a heating mechanism. Thus, the support table body 121 may heat the bonding substrate a to a predetermined bonding temperature. Also, the inside of the support table body 121 may further include an electrostatic electrode for generating an electrostatic force. Thus, the support table body 121 may stably support the bonding substrate a by the electrostatic force.
[0046] The body support rod 122 may be formed in a rod shape extending vertically. The upper end of the body support rod 122 may be coupled to the lower surface of the support table body 121. The lower end of the body support rod 122 may be coupled to the lower plate of the cavity housing 110. The body support rod 122 may support the support table body 121 so that the height of the upper surface of the support table body 121 is the same as the height of the substrate inlet 111. Also, the body support rod 122 may be moved up and down by being coupled to a separate transfer mechanism, rather than the lower plate of the cavity housing 110.
[0047] The shape of the laser transmission plate 130 may be the same as the planar shape of the laser through-hole 113. The laser transmission plate 130 may be made of a transparent material such as quartz. The laser transmission plate 130 may be combined with the laser through-hole 113 to shield the laser through-hole 113. The laser transmission plate 130 may allow the laser beam oscillated from the laser irradiation module 200 located above the cavity housing 110 to pass through and irradiate the upper surface of the bonding substrate a.
[0048] The laser irradiation module 200 may include a device arrangement plate 210, a vertical cavity surface emitting laser device 220, and a laser support housing 230. The laser irradiation module 200 may be located above the bonding cavity 100 to irradiate a laser beam onto the upper surface of the bonding substrate a. That is, the laser irradiation module 200 may irradiate the laser beam in the downward direction. The laser irradiation module 200 may use various devices for oscillating the laser beam. For example, the laser irradiation module 200 may use the vertical cavity surface emitting laser device 220. The laser irradiation module 200 can be combined with the device arrangement plate 210 in such a way that the vertical cavity surface emitting laser device 220 faces downward. The laser irradiation module 200 may be located above the laser transmission plate 130 outside the cavity housing 110. As described above, in addition to the vertical cavity surface emitting laser device 220, the laser irradiation module 200 may also use other various devices for oscillating the laser beam.
[0049] The laser irradiation module 200 may include a laser oscillation region 200a and a laser non-oscillation region 200b. The laser oscillation region 200a is configured to cause a laser beam to oscillate in the vertical cavity surface emitting laser device 220, while the laser non-oscillation region 200b does not cause the laser beam to oscillate. That is, the laser irradiation module 200 may include the laser oscillation region 200a and the laser non-oscillation region 200b. The laser oscillation region 200a extends along a first direction and is spaced apart along a second direction, and is configured to cause the laser beam to oscillate. The laser non-oscillation region 200b is located between the laser oscillation regions 200a and does not cause the laser beam to oscillate. The laser oscillation region 200a may extend along the first direction (y direction) and be spaced apart along the second direction (x direction) in the laser irradiation module 200. The laser non-oscillation region 200b may be located between the laser oscillation regions 200a, extend along the first direction, and be spaced apart along the second direction. The width of the laser oscillation region 200a may be greater than the width of the laser non-oscillation region 200b. Moreover, the width of the laser non-oscillation region 200b may be greater than the bump pitch of the bonding substrate a. The width of the laser non-oscillation region 200b may be approximately 5 mm to 10 mm. Also, the laser non-oscillation region 200b may be formed continuously or discontinuously. In the case where the laser non-oscillation region 200b is formed discontinuously, it may mean that the laser oscillation region 200a is formed discontinuously in the middle.
[0050] Wherein, the first direction and the second direction may represent directions that are perpendicular to each other. Moreover, the first direction and the second direction may not only be directions that extend perpendicular to each other, but also directions that extend at an obtuse angle or an acute angle to each other. However, hereinafter, the description will be based on the relationship where the first direction and the second direction are perpendicular. That is, the description will be based on the relationship where the first direction is the y direction and the second direction is the x direction.
[0051] In the laser irradiation module 200, a plurality of vertical cavity surface emitting laser devices 220 can be arranged in a grid pattern on the upper surface of the device arrangement plate 210. Refer to Figure 4 and Figure 5 , the vertical cavity surface emitting laser devices 220 can be arranged in a grid pattern along the first direction and the second direction on the upper surface of the device arrangement plate 210.
[0052] The laser irradiation module 200 can reciprocate in a direction perpendicular to the direction in which the laser oscillation region 200a extends. Therefore, the y-direction is the direction in which the laser oscillation region 200a extends, and the x-direction is the direction in which the laser irradiation module 200 reciprocates. Also, when the laser oscillation region 200a extends in the x-direction, the laser irradiation module 200 can reciprocate in the y-direction. Thus, regardless of the extension direction of the laser oscillation region 200a and the laser non-oscillation region 200b, the laser irradiation module 200 can uniformly irradiate the bonding substrate a with a laser beam. If the laser beam is irradiated onto the bonding substrate a with the laser irradiation module 200 fixed, the solder bumps on the bonding substrate a located below the laser non-oscillation region 200b may not be properly bonded due to insufficient heating.
[0053] The device arrangement board 210 can be plate-shaped with a predetermined area and thickness. Preferably, the diameter of the device arrangement board 210 can be larger than the length of the bonding substrate a. The device arrangement board 210 can be made of a ceramic material or a metal material having thermal conductivity. The device arrangement board 210 can function to dissipate the heat generated from the vertical cavity surface emitting laser device 220.
[0054] The vertical cavity surface emitting laser device 220 can include a device substrate 221, a laser emitting unit 222, electrode terminals 223, and a cooling block 224. A plurality of the vertical cavity surface emitting laser devices 220 can be arranged along a grid direction on the device arrangement board 210. The vertical cavity surface emitting laser devices 220 can be arranged in a region on the surface of the device arrangement board 210 required for irradiating the bonding substrate a with a laser beam. The device substrate 221 can be bonded to the cooling block 224 through a separate adhesive layer 226.
[0055] Supply current can be supplied to the plurality of vertical cavity surface emitting laser devices 220 such that the optical power tends to be uniform. That is, the supply current supplied to the vertical cavity surface emitting laser devices 220 respectively can be independently controlled so that the overall optical power tends to be uniform. Herein, the optical power can represent the radiant energy or power of the laser beam irradiated from the vertical cavity surface emitting laser device 220. The optical power can be measured by a measuring mechanism such as a pyrometer or a laser power meter. Also, the vertical cavity surface emitting laser devices 220 can be supplied with supply current separately and differently according to the relationship between the supply current and the optical power calibrated in advance. Thus, the vertical cavity surface emitting laser devices 220 can uniformly control the optical power as a whole, thereby reducing the temperature deviation of the bonding substrate a.
[0056] The laser emission unit 222 that constitutes the vertical cavity surface emitting laser device 220 has an inherent optical efficiency. Therefore, even when the same current is supplied, the output optical power may vary. Thus, the vertical cavity surface emitting laser device 220 can pre-measure the power generated by each device according to the supplied current, separately determine the supply current for the required power, and supply it.
[0057] The vertical cavity surface emitting laser device 220 can be formed by arranging a plurality of laser emission units 222 along the x-axis direction and the y-axis direction. Although the vertical cavity surface emitting laser device 220 is not specifically shown in the drawings, the vertical cavity surface emitting laser device 220 can include a light emitting frame (not shown) for fixing the laser emission unit 222 and a power line (not shown) for supplying power to the laser emission unit 222. The vertical cavity surface emitting laser device 220 can apply the same current to the entire laser emission unit 222. Also, the vertical cavity surface emitting laser device 220 can apply different powers to the respective laser emission units 222.
[0058] The device substrate 221 can be constituted by a conventional substrate for mounting electronic devices. The device substrate 221 can be divided into a device area 221a for mounting the laser emission unit 222 and a terminal area 221b for mounting terminals for supplying power to the laser emission unit 222. A plurality of laser emission units 222 arranged in a grid pattern can be mounted in the device area 221a. The terminal area 221b is in contact with the device area 221a and has a plurality of terminals mounted thereon. The device area 221a can form a laser oscillation area 200a in the laser irradiation module 200, and the terminal area 221b can form a laser non-oscillation area 200b.
[0059] The laser emission unit 222 can be constituted by a variety of light emitting devices for irradiating laser beams. Preferably, the laser emission unit 222 can be constituted by a vertical cavity surface emitting laser unit. The laser emission unit 222 can irradiate a laser beam with a single wavelength of 940 nm. The laser emission unit 222 can be quadrilateral, and preferably, it can be square or a rectangle with a ratio of width to length not exceeding 1:2. The vertical cavity surface emitting laser unit can be made of a hexahedron-shaped chip and emits a high-power laser beam from one surface. Since the laser emission unit 222 emits a high-power laser beam, compared with existing halogen lamps, the heating rate of the bonding substrate a can be increased and the lifespan is relatively long.
[0060] A plurality of the laser light emitting units 222 may be arranged along the x-direction and the y-direction on the upper surface of the device substrate 221, and arranged in a grid pattern in the device region 221a. The laser light emitting units 222 may form an appropriate number and an appropriate pitch according to the area of the device region 221a and the energy of the laser beam irradiated onto the bonding substrate a. Also, the laser light emitting units 222 may maintain a specific pitch to ensure that the laser beam emitted therefrom can uniformly irradiate energy when overlapping with the laser beams of adjacent laser light emitting units 222. In this case, the sides of the laser light emitting units 222 may be in contact with adjacent laser light emitting devices 222, so that there is no separation distance.
[0061] A plurality of the electrode terminals 223 may be formed in the terminal region 221b of the device substrate 221. The electrode terminals 223 may include a + terminal and a - terminal for electrically connecting to the laser light emitting units 222. Although not shown in the drawings, the electrode terminals 223 can be electrically connected to the laser light emitting units 222 in various ways. The electrode terminals 223 may supply the current required to drive the laser light emitting units 222.
[0062] The cooling block 224 may be formed in a planar shape corresponding to the planar shape of the device substrate 221 and a predetermined height. The cooling block 224 may be made of a ceramic material or a metal material having heat conductivity. The cooling block 224 may be bonded to the lower surface of the device substrate 221 through a separate adhesive layer. The cooling block 224 may release the heat generated by the laser light emitting units 222 mounted on the surface of the device substrate 221 to the lower part. Accordingly, the cooling block 224 may cool the device substrate 221 and the laser light emitting units 222.
[0063] The cooling block 224 may form a cooling flow path 224a through which cooling water flows inside. The inlet and outlet of the cooling flow path 224a are formed on the lower surface, and the flow path may be formed in various forms inside the cooling block 224.
[0064] The laser support housing 230 may be a box type with a hollow interior. The horizontal area of the laser support housing 230 may be larger than the area of the device arrangement board 210. The lower plate of the laser support housing 230 may be combined with the device arrangement board 210. The laser support housing 230 may support the device arrangement board 210 and accommodate therein electrical terminals and wires (not shown) connected to the vertical cavity surface emitting laser device 220, cooling water terminals and cooling water pipes (not shown), etc. The laser support housing 230 may reciprocally move along the y-direction together with the device arrangement board 210.
[0065] The horizontal transfer module 300 may include a horizontal transfer support plate 310, horizontal transfer guide rails 320, horizontal transfer blocks 330, and a horizontal transfer mechanism 340. Further, the horizontal transfer module 300 may also include horizontal transfer support columns 350.
[0066] The horizontal transfer module 300 may be combined with the laser irradiation module 200, and may be combined with the rear side or the upper side of the laser irradiation module 200. The horizontal transfer module 300 may reciprocally move the laser irradiation module 200 in a direction perpendicular to the extending direction of the laser oscillation region 200a. The horizontal transfer module 300 may cause the laser irradiation module 200 to reciprocally move with a width greater than the width of the laser non-oscillation region 200b.
[0067] The horizontal transfer support plate 310 may be plate-shaped with a predetermined thickness and area. The horizontal transfer support plate 310 may form an area required for fixing two horizontal transfer guide rails. The horizontal transfer support plate 310 may be spaced apart from the laser irradiation module 200. More specifically, the horizontal transfer support plate 310 may be disposed spaced apart from the rear side or the upper side of the device arrangement plate 210 or the laser support housing 230 of the laser irradiation module 200.
[0068] The horizontal transfer guide rails 320 may be composed of conventional linear guide rails. The horizontal transfer guide rails 320 may be combined with the front surface of the horizontal transfer support plate 310.
[0069] The two horizontal transfer guide rails 320 may be fixedly spaced apart in the vertical direction along the horizontal direction on the front surface of the horizontal transfer support plate 310. The length of the horizontal transfer guide rails 320 may be greater than the distance that the laser irradiation module 200 moves in the horizontal direction.
[0070] The horizontal transfer blocks 330 may be conventional linear motion blocks. The two horizontal transfer blocks 330 may be respectively combined with the horizontal transfer guide rails 320. Further, the horizontal transfer blocks 330 may be combined with the laser irradiation module 200. For example, the horizontal transfer blocks 330 may be combined with the device arrangement plate 210 or the laser support housing 230 of the laser irradiation module 200. The horizontal transfer blocks 330 may reciprocally move along the horizontal transfer guide rails 320. Therefore, the horizontal transfer blocks 330 may cause the laser irradiation module 200 to reciprocally move in the horizontal direction.
[0071] The horizontal transfer mechanism 340 may be composed of a mechanism for reciprocating the horizontal transfer block 330. For example, the horizontal transfer mechanism 340 may include a horizontal ball screw 341 and a horizontal servo motor 344. The horizontal ball screw 341 may include a horizontal screw shaft 342 and a horizontal nut 343. The horizontal ball screw 341 may move the horizontal transfer block 330 by being coupled to the horizontal transfer block 330. More specifically, the horizontal screw shaft 342 may be disposed on the horizontal transfer support plate 310 along a direction parallel to the horizontal transfer guide 320. And, the horizontal nut 343 may be inserted by the horizontal screw shaft 342 and coupled to the horizontal transfer block 330. And, the horizontal servo motor 344 may be coupled to the horizontal screw shaft 342 to rotate the horizontal screw shaft 342. The horizontal nut 343 may move back and forth along the axial direction of the horizontal screw shaft 342 as the horizontal screw shaft 342 rotates, thereby moving the horizontal transfer block 330 back and forth. The horizontal transfer mechanism 340 may reciprocate the horizontal transfer block 330 in the horizontal direction.
[0072] The horizontal transfer support column 350 may be formed in a box shape or column shape extending in the vertical direction. The horizontal transfer support column 350 may be formed with a hollow interior. The horizontal transfer support column 350 may be located at the rear side of the horizontal transfer support plate 310 and may support the horizontal transfer support plate 310 by being coupled to the horizontal transfer support plate 310.
[0073] The vertical transfer module 400 may include a vertical ball screw 410, a vertical fixing block 420, and a vertical rotation mechanism 430. The vertical transfer module 400 may be coupled to the horizontal transfer module 300 to move the horizontal transfer module 300 in the vertical direction. More specifically, the vertical transfer module 400 may be coupled to the horizontal transfer support plate 310 to move the horizontal transfer support plate 310 up and down.
[0074] The vertical ball screw 410 may include a vertical screw shaft 411 and a vertical nut 412. The vertical ball screw 410 may be in the shape of a conventional ball screw. The vertical ball screw 410 may extend in the vertical direction at the rear side of the horizontal transfer module 300. The vertical ball screw 410 may be coupled to the horizontal transfer support column 350.
[0075] The vertical screw shaft 411 may extend in the vertical direction. The vertical screw shaft 411 may be rotatably coupled to the horizontal transfer support column 350.
[0076] The vertical nut 412 can be coupled to the vertical lead screw shaft 411 in a vertically movable manner. The vertical nut 412 can move up and down along the vertical lead screw shaft 411 as the vertical lead screw shaft 411 rotates. The vertical nut 412 can be directly coupled to the horizontal transfer support plate 310.
[0077] The vertical fixing block 420 can be in the shape of a block such as a column. The vertical fixing block 420 can be coupled to the vertical nut 412. Also, the vertical fixing block 420 can be coupled to the rear surface of the horizontal transfer support plate 310. On the other hand, the vertical fixing block 420 can be integrally formed with the vertical nut 412. The vertical fixing block 420 can support the horizontal transfer support plate 310 and move up and down together with the vertical nut 412. Accordingly, the vertical fixing block 420 can transfer the horizontal transfer support plate 310 up and down.
[0078] The vertical rotation mechanism 430 can be composed of a rotation handle. Also, the vertical rotation mechanism 430 can be composed of a drive motor or a servo motor. The vertical rotation mechanism 430 can be coupled to the vertical ball screw 410 to rotate the vertical ball screw 410. More specifically, the vertical rotation mechanism 430 can be coupled to the vertical lead screw shaft 411 to rotate the vertical lead screw shaft 411.
[0079] The embodiments disclosed in this specification merely disclose the most preferred embodiments selected from various possible embodiments to assist those of ordinary skill in the art in understanding. The technical idea of the present invention is not necessarily limited to or restricted by these embodiments. Various modifications, additions, and changes can be made without departing from the technical idea of the present invention. Of course, other equivalent embodiments can also be implemented.
Claims
1. A semiconductor chip laser bonding device, characterized in that, It includes: A laser irradiation module, having a laser oscillation region and a laser non-oscillation region, the laser oscillation region extends along a first direction and is spaced apart along a second direction, for oscillating a laser beam, and the laser non-oscillation region is located between the laser oscillation regions and does not oscillate the laser beam; and A horizontal transfer module, for moving the laser irradiation module along the second direction, When the laser irradiation module irradiates a laser beam on the upper surface of a bonding substrate on which a semiconductor chip is placed, the horizontal transfer module reciprocates the laser irradiation module along the second direction.
2. The semiconductor chip laser bonding device according to claim 1, characterized in that The semiconductor chip laser bonding device further includes a bonding cavity, and the bonding cavity includes: A cavity housing, in a box shape, which houses the bonding substrate therein, having a laser through hole formed in the upper plate of the cavity housing above the bonding substrate, A substrate support table, for supporting the bonding substrate inside the cavity housing; and A laser transmissive plate, combined with the laser through hole.
3. The semiconductor chip laser bonding device according to claim 2, characterized in that, The cavity housing further includes: A substrate inlet, for allowing the bonding substrate to enter from one side wall; A substrate outlet, for allowing the bonding substrate to exit from the other side wall; A gas inlet hole, for allowing a transfer gas to flow into the interior; and A gas discharge hole, for discharging the transfer gas from the interior.
4. The semiconductor chip laser bonding device according to claim 1, characterized in that, The laser irradiation module is formed by arranging vertical cavity surface emitting laser devices in a grid pattern on the lower surface of a device arrangement plate, The vertical cavity surface emitting laser device includes a device region and a terminal region, a laser emitting unit for oscillating the laser beam is installed in the device region, and a terminal for supplying power to the laser emitting unit is installed in the terminal region, The device region forms the laser oscillation region, and the terminal region forms the laser non-oscillation region.
5. The semiconductor chip laser bonding device according to claim 4, characterized in that, The width of the laser oscillation region is greater than the width of the laser non-oscillation region, The horizontal transfer module reciprocates the laser irradiation module at a distance greater than the width of the laser non-oscillation region.
6. The semiconductor chip laser bonding device according to claim 1, wherein The horizontal transfer module includes: A horizontal transfer support plate, located at the rear side of the laser irradiation module; Two horizontal transfer guide rails, fixed to the front surface of the horizontal transfer support plate at intervals in the vertical direction in a horizontally extending manner; A horizontal transfer block, combined with the horizontal transfer guide rails and the laser irradiation module; A horizontal transfer mechanism, for reciprocating the horizontal transfer block; and A horizontal transfer support column, located at the rear side of the horizontal transfer support plate, combined with the horizontal transfer support plate.
7. The semiconductor chip laser bonding device according to claim 6, wherein, The horizontal transfer mechanism includes: A horizontal ball screw, combined with the horizontal transfer block, for moving the horizontal transfer block; and A horizontal servo motor, combined with the horizontal ball screw.
8. The semiconductor chip laser bonding device according to claim 6, wherein, The semiconductor chip laser bonding device further includes a vertical transfer module, which is combined with the horizontal transfer module and is used for moving the horizontal transfer module up and down.