Laminated substrate, connection substrate, and semiconductor device

Abstract

The laminated substrate has a frame-shaped first member containing an organic resin and a frame-shaped second member containing a ceramic. In the laminated substrate, a first member and a second member are laminated with each other, and an inner frame portion of the first member and an inner frame portion of the second member are connected.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a laminated substrate, a connection substrate, and a semiconductor device. Background Art

[0002] Conventionally, as a substrate for a semiconductor device, a substrate made of an organic resin formed in a frame shape (for example, see Patent Document 1) has been used.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2003-303922. Summary of the Invention

[0006] The laminated substrate of the present disclosure has a frame-shaped first member containing an organic resin and a frame-shaped second member containing ceramics. In the laminated substrate, the first member and the second member are laminated on each other, and the inner frame portion of the first member is connected to the inner frame portion of the second member. Brief Description of the Drawings

[0007] Figure 1 It is a perspective view showing an example of the structure of the laminated substrate according to the embodiment.

[0008] Figure 2 Is Figure 1 A sectional view taken along the line A-A shown.

[0009] Figure 3 It is an enlarged sectional view showing the structure of the interface between the first member and the second member according to the embodiment.

[0010] Figure 4 It is an enlarged sectional view showing the structure of the inner wall of the first member according to the embodiment.

[0011] Figure 5 It is a perspective view showing an example of the structure of the connection substrate according to the embodiment.

[0012] Figure 6 It is a perspective view showing another example of the structure of the laminated substrate according to the embodiment.

[0013] Figure 7 It is a sectional view showing an example of the structure of the semiconductor device according to the embodiment.

[0014] Figure 8 It is a sectional view showing an example of the structure of the laminated substrate according to another Embodiment 1.

[0015] Figure 9This is a cross-sectional view showing an example of the structure of a laminated substrate according to another Embodiment 2.

[0016] Figure 10 This is a cross-sectional view showing an example of the structure of a laminated substrate according to another Embodiment 3.

[0017] Figure 11 This is a cross-sectional view showing an example of the structure of a laminated substrate according to another Embodiment 4.

[0018] Figure 12 This is a cross-sectional view showing an example of the structure of a laminated substrate according to another Embodiment 5.

[0019] Figure 13 This is a cross-sectional view showing an example of the structure of a laminated substrate according to another Embodiment 6.

[0020] Figure 14 This is a cross-sectional view showing an example of the structure of a laminated substrate according to another Embodiment 7. Detailed Embodiments

[0021] Conventionally, as a substrate for a semiconductor device, a substrate containing an organic resin formed in a frame shape has been used. On the other hand, in the above-mentioned prior art, since the rigidity of the substrate is low, there is a problem that the substrate is easily bent. As a result, the reliability of the semiconductor device may be reduced.

[0022] Therefore, a technique capable of overcoming the above problems and improving the bending strength of the laminated substrate is expected.

[0023] Hereinafter, with reference to the drawings, embodiments of the laminated substrate, the connection substrate, and the semiconductor device disclosed in the present application will be described. In addition, the present disclosure is not limited to the embodiments shown below. In addition, each embodiment can be appropriately combined within a range where the processing contents do not conflict. In addition, in the following embodiments, the same reference numerals are assigned to the same parts, and repeated descriptions are omitted.

[0024] In addition, in the embodiments shown below, there are cases where expressions such as "along", "perpendicular", or "parallel" are used, but these expressions do not need to be strictly "along", "perpendicular", or "parallel". That is, the above expressions allow for deviations such as manufacturing accuracy and setting accuracy.

[0025] <Embodiment>

[0026] First, with reference to Figures 1 - 4 the structure of the laminated substrate 1 according to the embodiment will be described. Figure 1 This is a perspective view showing an example of the structure of the laminated substrate 1 according to the embodiment, Figure 2 is Figure 1A front view cross-sectional view taken along line A-A as shown.

[0027] As Figure 1 shown, etc., the laminated substrate 1 according to the embodiment has a first member 2 and a second member 3. The first member 2 has a frame shape (quadrilateral frame shape) and contains an organic resin. The second member 3 has a frame shape (quadrilateral frame shape) and contains a ceramic.

[0028] The organic resin constituting the first member 2 is, for example, one selected from the group consisting of epoxy resin, polyimide resin, cyclic olefin resin, and polyphenylene ether resin. The ceramic constituting the second member 3 is, for example, one selected from the group consisting of alumina, alumina-zirconia composite, mullite, aluminum nitride, silicon nitride, and silicon carbide.

[0029] Among them, for example, regarding alumina, it includes not only the metal oxide of a single component of alumina (Al2O3), but also the so-called alumina-based ceramics containing a sintering aid in alumina. The same applies to the alumina-zirconia composite, mullite, aluminum nitride, silicon nitride, and silicon carbide, and ceramics containing a sintering aid are selected as preferred materials.

[0030] Moreover, in the laminated substrate 1 according to the embodiment, as Figure 2 shown, the first member 2 and the second member 3 are laminated with each other. In addition, in the embodiment, the inner frame portion 2a of the first member 2 is connected to the inner frame portion 3a of the second member 3. Thus, the inner frame portion 1a including the inner frame portion 2a and the inner frame portion 3a is located inside the laminated substrate 1.

[0031] Among them, in the embodiment, the frame-shaped laminated substrate 1 includes the first member 2 containing an organic resin and the second member 3 containing a ceramic. Thus, compared with a frame-shaped substrate composed only of an organic resin, the rigidity can be improved. Therefore, according to the embodiment, the bending strength of the frame-shaped substrate can be improved.

[0032] In addition, in the embodiment, since the frame-shaped laminated substrate 1 includes the first member 2 containing an organic resin and the second member 3 containing a ceramic, compared with the case of a substrate composed only of an organic resin, even if the substrate is thinned, the rigidity can be ensured without additionally adding a reinforcing member.

[0033] Thus, compared with the inner frame portion 1a used to ensure the accommodation space for the semiconductor element 21 (refer to Figure 7 ) only by using an organic resin, the semiconductor device 20 (refer to Figure 7 ) can be thinned.

[0034] In addition, in the embodiment, by forming the second member 3 containing a ceramic into a frame shape, the volume of the second member 3 can be reduced by the amount of the inner frame portion 3a. Therefore, according to the embodiment, the laminated substrate 1 can be made lighter.

[0035] In addition, in the embodiment, as Figure 2 shown, the inner wall 2b of the first member 2 and the inner wall 3b of the second member 3 can both be parallel to the stacking direction D. Thus, for example, when the semiconductor element 21 is a light-emitting element, when the light emitted from the semiconductor element 21 is reflected by the inner wall 2b or the inner wall 3b, it is easy to control the reflection direction.

[0036] In addition, in the embodiment, the inner wall 2b of the first member 2 and the inner wall 3b of the second member 3 can be flush with each other. Thus, the inner wall 2b and the inner wall 3b form an integral plane, and therefore, for example, when the semiconductor element 21 is a light-emitting element, it is easy to control the reflection direction of the light emitted from the semiconductor element 21.

[0037] Herein, the connection between the inner frame portion 2a of the first member 2 and the inner frame portion 3a of the second member 3 means that the space (first space) provided inside the first member 2 and the space (second space) provided inside the second member 3 form a continuous single space.

[0038] In addition, in this stacked substrate 1, the volume of the space (first space) provided inside the first member 2 is the same as the volume of the space (second space) provided inside the second member 3.

[0039] Figure 3 is an enlarged cross-sectional view showing the structure of the interface between the first member 2 and the second member 3 according to the embodiment. As Figure 3 shown, in the embodiment, the first member 2 and the second member 3 can also be bonded via the carbon particles 4. That is, in the embodiment, the carbon particles 4 (boundary-type carbon particles 4) can be arranged to contact both the first joint surface 2d of the first member 2 and the second joint surface 3d of the second member 3.

[0040] In this way, by having the carbon particles 4 with a lower Young's modulus than ceramic particles and metal particles in the joint region between the first member 2 and the second member 3, the situation where the joint region becomes a high Young's modulus can be reduced.

[0041] In addition, in the stacked substrate 1 according to the embodiment, the carbon particles 4 with a small specific gravity can be sparsely located between the first member 2 and the second member 3. Moreover, in the portion where the carbon particles 4 do not exist, the organic resin component of the first member 2 can be directly bonded to the second joint surface 3d of the second member 3.

[0042] In addition, in the embodiment, the carbon particles 4 may have portions that enter the first recess 2d1 located on the first joint surface 2d of the first member 2 and the second recess 3d1 located on the second joint surface 3d of the second member 3. For example, in the embodiment, at the interface between the first member 2 and the second member 3, most of the carbon particles 4 may enter the first recess 2d1 and the second recess 3d1.

[0043] As a result, the carbon particles 4 are in a state of being constrained with respect to the first member 2 and the second member 3. Therefore, even when the entire laminated substrate 1 is deformed, it is difficult for the carbon particles 4 to fall off from the laminated substrate 1.

[0044] In addition, in the embodiment, compared with the second member 3 containing ceramics, the carbon particles 4 may enter the first member 2 containing an organic resin to a greater extent. In other words, the boundary-existing type of carbon particles 4 located at the boundary between the first member 2 and the second member 3 has a first portion 4a that enters the first recess 2d1 and a second portion 4b that enters the second recess 3d1. In the case of such boundary-existing type of carbon particles 4, it is preferable that the first portion 4a on the first member 2 side is larger than the second portion 4b on the second member 3 side.

[0045] As a result, the carbon particles 4 are in a state of being more greatly constrained with respect to the first member 2. Therefore, even when the entire laminated substrate 1 is deformed, it is difficult for the carbon particles 4 to fall off from the first member 2.

[0046] Figure 4 is an enlarged cross-sectional view showing the structure of the inner wall 2b of the first member 2 according to the embodiment. As Figure 4 shown, the first member 2 according to the embodiment contains a plurality of inorganic fillers F. The inorganic filler F contains the above-mentioned carbon particles 4 (refer to Figure 3 ) and particles composed of an inorganic component (such as silica, etc.) different from the carbon particles 4.

[0047] Moreover, in the embodiment, a resin layer 2b1 in which the inorganic filler F is less than the inside of the first member 2 (that is, the organic resin component is more than the inside of the first member 2) may also be located on the surface of the inner wall 2b.

[0048] The thickness of the resin layer 2b1 is, for example, 0.1 μm or more and 5 μm or less. That is, in the present disclosure, the "inside of the first member 2" refers to a position deeper than 0.1 μm from the surface of the inner wall 2b.

[0049] For example, in the embodiment, a resin layer 2b1 formed integrally of an organic resin component (that is, composed only of an organic resin component) may be located on the inner wall 2b of the first member 2. Moreover, in the embodiment, the surface of the resin layer 2b1 may also have gloss.

[0050] Thus, for example, when the semiconductor element 21 (see Figure 7 ) is an imaging element, the occurrence of diffuse reflection of light incident on the semiconductor element 21 on the inner wall 2b can be reduced. Therefore, according to the embodiment, an image with high resolution can be obtained.

[0051] In addition, the inorganic filler F can be exposed from the outer edge portion 2c of the first member 2 (see Figure 2 ). That is, a resin layer in which the inorganic filler F is less than the inside of the first member 2 may not be formed on the outer edge portion 2c of the first member 2.

[0052] Figure 5 FIG. is a perspective view showing an example of the structure of the connection substrate 10 according to the embodiment. As Figure 5 shown, the connection substrate 10 according to the embodiment arranges and connects a plurality of the laminated substrates 1 described so far along a plane perpendicular to the lamination direction D (see Figure 2 ). For example, the connection substrate 10 arranges and configures a plurality of laminated substrates 1 in a matrix.

[0053] Moreover, in this connection substrate 10, a cut line (not shown) may be located between adjacent second members 3. This cut line is located, for example, on the surface of a ceramic member formed by connecting a plurality of second members 3.

[0054] Thus, the connection substrate 10 can be cut starting from this cut line, so that a plurality of laminated substrates 1 can be easily manufactured.

[0055] In addition, in the embodiment, the cut line may be located between adjacent first members 2, or may not be located between adjacent first members 2. By making the cut line located on the surface of an organic resin member formed by connecting a plurality of first members 2, a plurality of laminated substrates 1 can be manufactured more easily.

[0056] When no cut line is formed on the surface of the first member 2, the first member 2 preferably has transparency (light transmittance) such that the cut line provided on the second member 3 can be confirmed from the upper surface side of the first member 2. In other words, this connection substrate 10 has a structure in which the first member 2 without a cut line is laminated on the second member 3 having a cut line.

[0057] When the cut line is, for example, in a groove shape, there is a case where the portion where the groove-shaped cut line exists becomes a source of breakage of the connection substrate 10. However, since the first member 2 does not have a groove-shaped cut line, the connection substrate 10 can be prevented from breaking or being damaged by pasting the first member 2 to the second member 3.

[0058] In addition, when the groove-shaped cutting line is provided between the first member 2 and the second member 3, it is possible to prevent dust and the like from adhering to the groove in the process from the stage of manufacturing the connection substrate to cutting it to obtain the laminated substrate 1.

[0059] In addition, when the first member 2 has transparency (light transmissibility), image recognition of the cutting line can be performed, and thus the connection substrate 10 can also be automatically cut based on image recognition.

[0060] In addition, even if the cutting line is not on the surface of the ceramic member to which a plurality of first members 2 are connected, the organic resin member is easily broken, so that a plurality of laminated substrates 1 can be manufactured without particular problems.

[0061] Figure 6 It is a perspective view showing another example of the structure of the laminated substrate 1 according to the embodiment. In Figure 6 this example, the wiring layer 5 is located on the laminated substrate 1, which is different from the example of Figure 1 . This wiring layer 5 is located, for example, on the surface 2e of the first member 2. In addition, via hole wirings, internal wiring layers, etc. (not shown) may be electrically connected to the wiring layer 5.

[0062] In this way, by arranging the wiring layer 5 on the laminated substrate 1, the function as a wiring substrate is improved.

[0063] Figure 7 It is a cross-sectional view showing an example of the structure of the semiconductor device 20 according to the embodiment. As Figure 7 shown, the semiconductor device 20 according to the embodiment includes a laminated substrate 1, a semiconductor element 21, a support plate 22, and bonding wires 23. In addition, Figure 7 the laminated substrate 1 shown includes the above-mentioned wiring layer 5.

[0064] The semiconductor element 21 is, for example, an LSI (Large Scale Integration), an imaging element, a light-emitting element, a quantum element, or an elastic wave element, etc. The support plate 22 is, for example, a metal plate or the like and supports the semiconductor element 21. The support plate 22 is provided, for example, so as to block the bottom of the inner frame portion 1a, and the semiconductor element 21 is located at the bottom of the inner frame portion 1a.

[0065] The bonding wires 23 electrically connect the wiring layer 5 located on the laminated substrate 1 and the semiconductor element 21. In addition, the member for electrically connecting the wiring layer 5 and the semiconductor element 21 is not limited to the bonding wires 23, and may be, for example, a lead frame or the like.

[0066] In this way, by manufacturing the semiconductor device 20 using the laminated substrate 1 according to the embodiment, a semiconductor device 20 with improved bending strength can be realized.

[0067] In addition, in Figure 7 the example of Figure 7 , an example is shown in which the semiconductor element 21 in the semiconductor device 20 is supported by the support plate 22 disposed so as to block the bottom of the inner frame portion 1a. However, the present disclosure is not limited to this example, and the semiconductor element 21 may be supported in any form.

[0068] <Other Embodiments>

[0069] For bonding, refer to Figures 8 - 14 descriptions of various other embodiments. Figure 8 FIG. is a cross-sectional view showing an example of the structure of the laminated substrate 1 according to another Embodiment 1. As Figure 8 shown, in the laminated substrate 1 according to another Embodiment 1, the structure of the inner wall 2b is different from that of the above-described embodiment.

[0070] Specifically, in another Embodiment 1, a part of the inner wall 2b of the first member 2 may also cover the inner wall 3b of the second member 3. In other words, in another Embodiment 1, it may also be that the covering portion 2b2 is located on the second member 3 side of the inner wall 2b of the first member 2, and the covering portion 2b2 covers a part of the portion on the first member 2 side of the inner wall 3b of the second member 3.

[0071] Thereby, the adhesiveness at the interface between the first member 2 and the second member 3 can be improved. In addition, the mutual restraint force increases when the first member 2 and the second member 3 thermally expand.

[0072] Figure 8 The structure shown, for example, can be formed by the following method: When an uncured state organic resin sheet that will become the first member 2 is laminated on the second member 3 containing ceramics formed by sintering and is pressure-heated, the uncured state organic resin sheet is plastically deformed. In this case, the uncured state organic resin sheet may also overlap in a state having an inner frame portion (a state having a through hole).

[0073] Figure 9 FIG. is a cross-sectional view showing an example of the structure of the laminated substrate 1 according to another Embodiment 2. As Figure 9 shown, in the laminated substrate 1 according to another Embodiment 2, the positions of the inner wall 2b and the inner wall 3b are different from those of the above-described embodiment.

[0074] Specifically, in another Embodiment 2, in a plan view, the area of the inner frame portion 2a of the first member 2 may be larger than the area of the inner frame portion 3a of the second member 3. For example, in another Embodiment 2, the inner wall 2b of the first member 2 may be located at a position more outward than the inner wall 3b of the second member 3.

[0075] As a result, the volume ratio of the first member 2 with respect to the entire stacked substrate 1 becomes smaller, and thus the Young's modulus of the entire stacked substrate 1 depends greatly on the second member 3 containing ceramics. Therefore, according to another embodiment 2, the rigidity per unit volume can be increased.

[0076] In addition, in another embodiment 2, by increasing the area of the inner frame portion 2a of the first member 2, for example, when the semiconductor element 21 (refer to Figure 7 ) is an imaging element, a wider range of light is acquired by the semiconductor element 21. Therefore, according to another embodiment 2, an image with high resolution can be acquired.

[0077] Figure 10 FIG. is a cross-sectional view showing an example of the structure of the stacked substrate 1 according to another embodiment 3. As Figure 10 shown, in the stacked substrate 1 according to another embodiment 3, the structure of the first member 2 is different from that of the above-described another embodiment 2.

[0078] Specifically, in another embodiment 3, a part of the first member 2 may be formed in a shape that gradually expands toward the stepped portion 3b1 (the horizontal portion connected to the inner wall 3b) of the second member 3. In other words, in another embodiment 3, the covering portion 2b3 may also be located on the side of the inner wall 2b of the first member 2 that faces the second member 3, and the covering portion 2b3 covers a part of the stepped portion 3b1 connected to the inner wall 3b of the second member 3.

[0079] As a result, the adhesiveness at the interface between the first member 2 and the second member 3 can be improved. In addition, the adhesion area of the first member 2 to the second member 3 becomes larger, and accordingly, the mutual binding force between the first member 2 and the second member 3 during thermal expansion is increased.

[0080] Figure 10 The structure shown, for example, can be formed by the following method: when an uncured state organic resin sheet that will become the first member 2 is laminated on the ceramic-containing second member 3 formed by firing and then pressure-heated, the uncured state organic resin sheet is plastically deformed. In this case, the uncured state organic resin sheet may also be overlapped in a state having an inner frame portion (a state having a through hole).

[0081] Figure 11 FIG. is a cross-sectional view showing an example of the structure of the stacked substrate 1 according to another embodiment 4. As Figure 11 shown, in the stacked substrate 1 according to another embodiment 4, the positions of the outer edge portion 2c and the outer edge portion 3c are different from those in the above-described embodiments.

[0082] Specifically, in another embodiment 4, in a plan view, the outer edge portion 2c of the first member 2 may also be located at a position more outward than the outer edge portion 3c of the second member 3. Thus, by disposing the first member 2 containing the organic resin to protrude outward from the second member 3 containing the ceramic, even when the semiconductor device 20 (see Figure 7 ) is subjected to mechanical shocks such as dropping, the laminated substrate 1 is less likely to break.

[0083] Therefore, according to another embodiment 4, the reliability of the semiconductor device 20 can be improved.

[0084] Figure 12 FIG. is a cross-sectional view showing an example of the structure of the laminated substrate 1 according to another embodiment 5. As Figure 12 shown, in the laminated substrate 1 according to another embodiment 5, in a plan view, the area of the inner frame portion 2a of the first member 2 may also be larger than the area of the inner frame portion 3a of the second member 3.

[0085] Thus, for example, when the semiconductor element 21 (see Figure 7 ) is an imaging element, a wider range of light is obtained by the semiconductor element 21. Therefore, according to another embodiment 5, an image with high resolution can be obtained.

[0086] In addition, in another embodiment 5, in a plan view, the outer edge portion 2c of the first member 2 may also be located at a position more outward than the outer edge portion 3c of the second member 3. Thus, even when the semiconductor device 20 (see Figure 7 ) is subjected to mechanical shocks such as dropping, the laminated substrate 1 is less likely to break.

[0087] Therefore, according to another embodiment 5, the reliability of the semiconductor device 20 can be improved.

[0088] Figure 13 FIG. is a cross-sectional view showing an example of the structure of the laminated substrate 1 according to another embodiment 6. As Figure 13 shown, in the laminated substrate 1 according to another embodiment 6, the orientation of the inner wall 2b is different from that of the above-described embodiment.

[0089] Specifically, in another embodiment 6, the inner frame portion 2a of the first member 2 may also become smaller as it approaches the second member 3. That is, in another embodiment 6, the inner wall 2b of the first member 2 may be inclined so as to face inward as it approaches the second member 3.

[0090] Thus, for example, when the semiconductor element 21 is a light-emitting element, it is easy to control the orientation of the reflection when the light emitted from the semiconductor element 21 is reflected by the inner wall 2b.

[0091] In addition, inFigure 13 In the example, an example is shown in which the inner wall 2b of the first member 2 is inclined so as to face inward as it approaches the second member 3, but the present disclosure is not limited to this example. For example, the inner wall 2b of the first member 2 may also be inclined so as to face outward as it approaches the second member 3.

[0092] In addition, the central portion of the inner wall 2b of the first member 2 in the stacking direction D may also be located more outward than the both end portions in the stacking direction D. That is, the inner wall 2b of the first member 2 may also be bent into a concave shape in a cross section.

[0093] In addition, the central portion of the inner wall 2b of the first member 2 in the stacking direction D may also be located more inward than the both end portions in the stacking direction D. That is, the inner wall 2b of the first member 2 may also be bent into a convex shape in a cross section.

[0094] In addition, as Figure 14 shown, the surface 2e of the first member 2 may also be inclined such that the thickness of the first member 2 on the inner wall 2b side is smaller than the thickness of the first member 2 on the outer edge portion 2c side. Figure 14 is a cross-sectional view showing an example of the structure of the stacked substrate 1 according to another embodiment 7.

[0095] In addition, the surface 2e of the first member 2 may also be inclined such that the thickness of the first member 2 on the inner wall 2b side is larger than the thickness of the first member 2 on the outer edge portion 2c side.

[0096] As described above, the embodiments of the present disclosure have been described, but the present disclosure is not limited to the above embodiments, and various changes can be made as long as the gist thereof is not deviated from.

[0097] Further effects and other modes can be easily derived by those skilled in the art. Therefore, the broader modes of the present disclosure are not limited to the specific details and representative embodiments shown and described as above. Therefore, various changes can be made without departing from the spirit or scope of the general inventive concept defined by the appended claims and their equivalents.

[0098] In addition, the present technology may also adopt the following structure. (1)

[0100] A stacked substrate, comprising:

[0101] A frame-shaped first member containing an organic resin; and

[0102] A frame-shaped second member containing a ceramic,

[0103] The first member and the second member are stacked on each other,

[0104] The inner frame portion of the first member is connected to the inner frame portion of the second member. (2)

[0106] The laminated substrate according to (1) above, wherein

[0107] When viewed from above, the area of the inner frame portion of the first member is larger than the area of the inner frame portion of the second member. (3)

[0109] The laminated substrate according to (1) or (2) above, wherein

[0110] When viewed from above, the outer edge portion of the first member is located at a position more outside than the outer edge portion of the second member. (4)

[0112] The laminated substrate according to any one of (1) to (3) above, wherein

[0113] The first member and the second member are joined via a plurality of carbon particles. (5)

[0115] The laminated substrate according to (4) above, wherein

[0116] The first member has a first joint surface joined to the second member and a first recess provided on the first joint surface,

[0117] The second member has a second joint surface bonded to the first joint surface and a second recess provided on the second joint surface,

[0118] The plurality of carbon particles include boundary - existing carbon particles that enter the boundary between the first recess and the second recess. (6)

[0120] The laminated substrate according to (5) above, wherein

[0121] The boundary - existing carbon particles have a first part that enters the first recess and a second part that enters the second recess,

[0122] The first part is larger than the second part. (7)

[0124] The laminated substrate according to any one of (1) to (6) above, wherein

[0125] The first member has an inorganic filler,

[0126] A resin layer that is less than the inside of the first member is located on the surface of the inner wall of the first member. (8)

[0128] The stacked substrate according to any one of (1) to (7) above, wherein,

[0129] The inner frame portion of the first member becomes smaller as it approaches the second member. (9)

[0131] A connection substrate, wherein,

[0132] A plurality of the stacked substrates according to any one of (1) to (8) above are arranged and connected along a plane perpendicular to the stacking direction,

[0133] The cutting line is located between the adjacent second members. (10)

[0135] A semiconductor device, having:

[0136] The stacked substrate according to any one of (1) to (8) above;

[0137] A wiring layer located on the stacked substrate; and

[0138] A semiconductor element electrically connected to the wiring layer.

[0139] Explanation of reference numerals

[0140] 1 Stacked substrate

[0141] 2 First member

[0142] 2a Inner frame portion

[0143] 2b Inner wall

[0144] 2b1 Resin layer

[0145] 2c Outer edge portion

[0146] 2d First joint surface

[0147] 2d1 First recess

[0148] 3 Second member

[0149] 3a Inner frame portion

[0150] 3b Inner wall

[0151] 3c Outer edge portion

[0152] 3d Second joint surface

[0153] 3d1 Second recess

[0154] 4 Carbon particles

[0155] 4a First part

[0156] 4b Second part

[0157] 5 Wiring layer

[0158] 10 Connection substrate

[0159] 20 Semiconductor device

[0160] 21 Semiconductor element

[0161] D Lamination direction

[0162] F Inorganic filler

Claims

1. A stacked substrate, wherein, comprising: a box-shaped first member containing an organic resin; and a box-shaped second member containing a ceramic, wherein the first member and the second member are stacked on each other, and an inner frame portion of the first member is connected to an inner frame portion of the second member.

2. The stacked substrate according to claim 1, wherein in a plan view, an area of the inner frame portion of the first member is larger than an area of the inner frame portion of the second member.

3. The stacked substrate according to claim 1 or 2, wherein in a plan view, an outer edge portion of the first member is located at a position more outward than an outer edge portion of the second member.

4. The stacked substrate according to any one of claims 1 to 3, wherein the first member and the second member are joined via a plurality of carbon particles.

5. The stacked substrate according to claim 4, wherein the first member has a first joint surface joined to the second member and a first recess provided in the first joint surface, the second member has a second joint surface adhered to the first joint surface and a second recess provided in the second joint surface, and the plurality of carbon particles include boundary-existing carbon particles that enter a boundary between the first recess and the second recess.

6. The stacked substrate according to claim 5, wherein the boundary-existing carbon particles have a first portion that enters the first recess and a second portion that enters the second recess, and the first portion is larger than the second portion.

7. The stacked substrate according to any one of claims 1 to 6, wherein the first member has an inorganic filler, and a resin layer that is less than the inside of the first member is located on a surface of an inner wall of the first member.

8. The stacked substrate according to any one of claims 1 to 7, wherein the inner frame portion of the first member becomes smaller as it approaches the second member.

9. A connection substrate, wherein a plurality of the stacked substrates according to any one of claims 1 to 8 are arranged and connected along a plane perpendicular to a stacking direction, and a cutting line is located between the second members adjacent to each other.

10. A semiconductor device, wherein, comprising: the stacked substrate according to any one of claims 1 to 8; a wiring layer located on the stacked substrate; and a semiconductor element electrically connected to the wiring layer.

Images