Charged particle beam device and preparation method thereof

Abstract

The embodiment of the invention provides a charged particle beam device and a preparation method thereof, and relates to the technical field of charged particle beams. A charged particle beam apparatus includes a charged particle source, a via array, and a deflector. The charged particle source is configured to emit a charged particle beam. The through hole array is located on the emission side of the charged particle source. The through-hole array includes a plurality of first through-holes, and the charged particle beam passes through at least two of the first through-holes. The deflector is located on the side of the through hole array away from the charged particle source. The deflector comprises a metal interconnection layer and a plurality of deflection electrodes arranged at intervals, and the deflection electrodes are electrically connected with the metal interconnection layer. Wherein the at least two deflection electrodes define a deflection via hole, and the charged particle beam passes through the deflection via hole. In the embodiment of the invention, a metal wire in the metal interconnection layer does not need to be used as a deflection electrode, so that the limitation of the metal interconnection layer on the height of the deflection electrode is reduced, and the control capability of the deflection electrode on the charged particle beam is improved.

Description

Technical Field

[0001] Embodiments of the present application relate to the technical field of charged particle beams, and in particular, to a charged particle beam device and a preparation method thereof. Background Art

[0002] A charged particle beam device generally includes a charged particle source and a deflector. The charged particle source is used to emit a charged particle beam, and the deflector is located on the emission side of the charged particle source. The deflector includes metal traces that enclose a deflection through-hole. An active driving circuit is electrically connected to the metal traces, so that a deflection electric field can be formed between different metal traces, that is, a deflection electric field can be formed within the deflection through-hole. The deflection electric field can change the deflection direction of the charged particle beam passing through the deflection through-hole.

[0003] However, the control ability of the metal traces for the charged particle beam is limited, which affects the performance of the charged particle beam device. Summary of the Invention

[0004] Embodiments of the present invention provide a charged particle beam device and a preparation method thereof, which are used to improve the control ability of the deflector for the charged particle beam, thereby improving the performance of the charged particle beam device.

[0005] On the one hand, embodiments of the present application provide a charged particle beam device. The charged particle beam device includes a charged particle source, a through-hole array, and a deflector. The charged particle source is configured to emit a charged particle beam. The through-hole array is located on the emission side of the charged particle source. The through-hole array includes a plurality of first through-holes, and the charged particle beam passes through at least two first through-holes. The deflector is located on the side of the through-hole array away from the charged particle source. The deflector includes a metal interconnection layer and a plurality of deflection electrodes arranged at intervals, and the plurality of deflection electrodes are electrically connected to the metal interconnection layer respectively. Among them, at least two deflection electrodes enclose a deflection through-hole, and the charged particle beam passes through the deflection through-hole.

[0006] In the embodiments of the present application, the deflection electrodes are electrically connected to the metal interconnection layer, so that an external active driving circuit can supply power to the deflection electrodes through the metal interconnection layer, so that a deflection electric field can be formed within the deflection through-hole enclosed by at least two deflection electrodes, so as to control the deflection direction of the charged particle beam passing through the deflection through-hole in the XY plane and can perform astigmatism correction on the charged particle beam passing through the deflection through-hole.

[0007] That is, in the embodiments of the present application, it is not necessary to use the metal traces in the metal interconnection layer as the deflection electrodes, reducing the limitation of the metal interconnection layer on the height of the deflection electrodes in the third direction (the direction from the charged particle source to the via array). In this way, it is possible to increase the height of the deflection electrodes in the third direction as needed, that is, it is possible to increase the depth of the deflection vias as needed, improving the control ability of the deflection electrodes for the charged particle beam. For example, the ability of the deflection electrodes to control the deflection of the charged particle beam in the XY plane and the ability of the deflection electrodes to perform astigmatism correction on the charged particle beam are improved, and the performance of the charged particle beam device is improved. Moreover, by adopting the above method, it is not necessary to increase the driving voltage, reducing the power consumption and heat generation of the deflector, reducing the risk of the deflector being unable to work properly due to excessive temperature, and improving the reliability of the deflector.

[0008] In some possible implementation manners, the metal interconnection layer is provided with a second via hole, and the second via hole penetrates through the metal interconnection layer along the thickness direction of the metal interconnection layer. The second via hole is communicated with the deflection via hole. Such a setting enables the charged particle beam to pass through the second via hole and the deflection via hole, avoiding the blockage of the charged particle beam by the metal interconnection layer.

[0009] In some possible implementation manners, the deflector further includes a first substrate, and the first substrate is located on a side of the metal interconnection layer away from the plurality of deflection electrodes. The first substrate is provided with a through window, and the through window penetrates through the first substrate along the thickness direction of the first substrate, and the through window is communicated with the second via hole. Such a setting enables the first substrate to play a role of supporting the metal interconnection layer, reducing the risk of damage to the metal interconnection layer. Moreover, the through window, the second via hole, and the deflection via hole can be communicated with each other, so that the charged particle beam can pass through the through window, the second via hole, and the deflection via hole, avoiding the blockage of the charged particle beam by the first substrate.

[0010] In some possible implementation manners, the closed figure surrounded by the orthographic projection of the edge of the second via hole on the first substrate is located within the closed figure surrounded by the edge of the through window. Such a setting enables the opening area of the through window to be larger than the opening area of the second via hole, reducing the number of charged particles hitting the side wall of the through window when the charged particle beam passes through the through window, improving the charging effect, and improving the performance of the charged particle beam device.

[0011] In some possible implementation manners, the plurality of deflection electrodes are hybrid bonded to the metal interconnection layer. Such a setting can improve the convenience and reliability of the electrical connection between the plurality of deflection electrodes and the metal interconnection layer.

[0012] In some possible implementation manners, the deflector further includes a second substrate, which is located between the plurality of deflection electrodes and the metal interconnection layer. The second substrate is provided with a third through hole, and the third through hole penetrates through the second substrate along the thickness direction of the second substrate. The third through hole communicates with the second through hole and the deflection through hole. With such a setting, the second substrate can play a role in carrying and supporting the metal interconnection layer, reducing the risk of damage to the metal interconnection layer. And by setting the third through hole to communicate with the second through hole and the deflection through hole, the charged particle beam can pass through the deflection through hole, the third through hole, and the second through hole, avoiding the second substrate from blocking the charged particle beam.

[0013] In some possible implementation manners, the second substrate is provided with through-silicon vias, and the through-silicon vias penetrate through the second substrate and are electrically connected to the plurality of deflection electrodes and the metal interconnection layer. With such a setting, the plurality of deflection electrodes and the plurality of metal traces of the metal interconnection layer can be electrically connected through the through-silicon vias, improving the convenience of the electrical connection between the two.

[0014] In some possible implementation manners, the plurality of deflection electrodes are closer to the via array relative to the metal interconnection layer. With such a setting, the charged particle beam can first pass through the deflection through hole and then pass through the second through hole, reducing the number of charged particles hitting the side wall of the second through hole, improving the charging effect, and improving the performance of the charged particle beam device.

[0015] In some possible implementation manners, the metal interconnection layer includes an interlayer dielectric layer and a plurality of metal traces. The plurality of metal traces are embedded in the interlayer dielectric layer. The plurality of metal traces are electrically connected to the plurality of deflection electrodes one by one. With such a setting, the active driving circuit can provide driving voltages for the deflection electrodes respectively through the plurality of metal traces, reducing the mutual influence between the plurality of deflection electrodes.

[0016] In some possible implementation manners, along the direction from the charged particle source to the via array, the height of the deflection electrode ranges from 100 μm (unit: micrometer) to 500 μm. With such a setting, it can be avoided that the height of the deflection electrode in the third direction is too large (for example, greater than 500 μm), resulting in an overly large volume of the deflector, and it can also be avoided that the height of the deflection electrode in the third direction is too small (for example, less than 100 μm), affecting the control effect of the deflection electrode on the charged particle beam.

[0017] In some possible implementation manners, the ratio of the height of the deflection electrode in the direction from the charged particle source to the through-hole array to the aperture of the deflection through-hole ranges from 10 to 20. With such a setting, it is possible to avoid the height of the deflection electrode being too high (for example, greater than 20) due to too large a ratio of the height of the deflection electrode to the aperture of the deflection through-hole, which affects the volume of the deflector; and it is also possible to avoid too small a ratio of the height of the deflection electrode to the aperture of the deflection through-hole (for example, less than 10), which affects the control effect of the deflection electrode on the charged particle beam. That is to say, the embodiments of the present application can increase the ratio of the depth to the width (i.e., aperture) of the deflection through-hole, consider the control ability of the deflection electrode on the charged particle beam from both the depth of the deflection through-hole and the aperture of the deflection through-hole, and on the basis of improving the control ability of the deflection electrode on the charged particle beam, reduce the volume of the deflector, which is beneficial to the miniaturization of the deflector.

[0018] In some possible implementation manners, the shape of the deflection through-hole is a prism, a cylinder, or a cuboid. The number of deflection through-holes is multiple, and the shapes of the multiple deflection through-holes are the same. With such a setting, the flexibility of the shape of the deflection through-hole can be improved to meet different requirements.

[0019] In some possible implementation manners, the material of the deflection electrode includes silicon with a doping concentration greater than or equal to 10E19 / cm 3 . With such a setting, the resistance of the deflection electrode can be reduced, and the control ability of the deflection electrode on the charged particle beam passing through the deflection through-hole can be improved.

[0020] On the other hand, the embodiments of the present application provide a method for manufacturing a charged particle beam device. The method for manufacturing a charged particle beam device includes: providing a charged particle source configured to emit a charged particle beam; providing a through-hole array located on the emission side of the charged particle source, where the through-hole array includes a plurality of first through-holes, and the charged particle beam passes through at least two first through-holes; forming a deflector located on the side of the through-hole array away from the charged particle source, where the deflector includes a metal interconnection layer and a plurality of deflection electrodes arranged at intervals, and the plurality of deflection electrodes are respectively electrically connected to the metal interconnection layer. Among them, at least two deflection electrodes enclose a deflection through-hole, and the charged particle beam passes through the deflection through-hole.

[0021] In the embodiments of the present application, the deflection electrode is electrically connected to the metal interconnection layer, so that an external active drive circuit can supply power to the deflection electrode through the metal interconnection layer, so that a deflection electric field can be formed in the deflection through-hole enclosed by at least two deflection electrodes, so as to control the deflection direction of the charged particle beam passing through the deflection through-hole in the XY plane and can perform astigmatism correction on the charged particle beam passing through the deflection through-hole.

[0022] That is, in the embodiments of the present application, there is no need to use the metal traces in the metal interconnection layer as the deflection electrodes, reducing the limitation of the metal interconnection layer on the height of the deflection electrodes in the third direction (the direction from the charged particle source to the via array). In this way, the height of the deflection electrodes in the third direction can be increased as needed, that is, the depth of the deflection vias can be increased as needed, improving the control ability of the deflection electrodes for the charged particle beam. For example, the ability of the deflection electrodes to control the deflection of the charged particle beam in the XY plane and the ability of the deflection electrodes to perform astigmatism correction on the charged particle beam are improved, enhancing the performance of the charged particle beam device. Moreover, by adopting the above method, there is no need to increase the driving voltage, reducing the power consumption and heat generation of the deflector, lowering the risk of the deflector malfunctioning due to excessive temperature, and improving the reliability of the deflector.

[0023] In some possible implementation manners, forming a deflector includes: forming a metal interconnection layer and a plurality of deflection electrodes respectively. Hybrid bonding the plurality of deflection electrodes and the metal interconnection layer. Understandably, forming the metal interconnection layer and the plurality of deflection electrodes respectively can reduce the mutual influence between the metal interconnection layer and the plurality of deflection electrodes during the preparation process. Hybrid bonding the plurality of deflection electrodes and the metal interconnection layer can improve the reliability and convenience of the electrical connection between the two.

[0024] In some possible implementation manners, forming a metal interconnection layer includes: providing a first substrate. Forming a metal interconnection layer on one side of the first substrate. Opening a second via in the metal interconnection layer. The second via penetrates the metal interconnection layer along the thickness direction of the metal interconnection layer. The second via communicates with the deflection via. After forming the metal interconnection layer, the method for manufacturing a charged particle beam device further includes: opening a through window on the first substrate. The through window penetrates the first substrate along the thickness direction of the first substrate, and the through window communicates with the second via. The closed figure surrounded by the positive projection of the edge of the second via on the first substrate is located within the closed figure surrounded by the edge of the through window. Understandably, the first substrate can support the metal interconnection layer, reducing the risk of damage to the metal interconnection layer. The closed figure surrounded by the positive projection of the edge of the second via on the first substrate is located within the closed figure surrounded by the edge of the through window, that is, the opening area of the through window is larger than the opening area of the second via, reducing the number of charged particles hitting the sidewall of the through window when the charged particle beam passes through the through window, improving the charging effect, and enhancing the performance of the charged particle beam device.

[0025] In some possible implementations, forming multiple deflection electrodes includes: providing a third substrate. An electrode layer is formed in a stacked manner on one side of the third substrate. The electrode layer is etched to form multiple deflection electrodes arranged at intervals. Hybrid bonding the multiple deflection electrodes and the metal interconnection layer includes: hybrid bonding the side of the multiple deflection electrodes away from the third substrate to the metal interconnection layer. The third substrate is removed. Understandably, the third substrate can support and protect the electrode layer, reducing the risk of damage to the electrode layer. After hybrid bonding the multiple deflection electrodes to the metal interconnection layer, removing the third substrate on the side of the deflection electrodes away from the metal interconnection layer can prevent the third substrate from blocking the movement of the charged particle beam.

[0026] In some possible implementations, forming a deflector includes: providing a second initial substrate. Doping the second initial substrate on one side to form a stacked electrode layer and a second substrate. The electrode layer is etched to form multiple deflection electrodes arranged at intervals. A metal interconnection layer is formed on the side of the second substrate away from the multiple deflection electrodes. A second through hole is formed in the metal interconnection layer, and a third through hole is formed in the second substrate. The second through hole penetrates the metal interconnection layer along the thickness direction of the metal interconnection layer, and the third through hole penetrates the second substrate along the thickness direction of the second substrate. The third through hole communicates the second through hole and the deflection through hole. The metal interconnection layer is electrically connected to the multiple deflection electrodes. Understandably, the second substrate is located between the multiple deflection electrodes and the metal interconnection layer, enabling the second substrate to support and carry the metal interconnection layer, reducing the risk of damage to the metal interconnection layer. The third through hole communicates the second through hole and the deflection through hole, allowing the charged particle beam to pass through the deflection through hole, the third through hole, and the second through hole, avoiding the second substrate from blocking the charged particle beam. Description of the Drawings

[0027] Figure 1 Schematic diagram of the positional relationship between the charged particle beam device and the semiconductor structure provided in some embodiments of the present application;

[0028] Figure 2 Schematic diagram of the structure of the through hole array provided in some embodiments of the present application;

[0029] Figure 3 Schematic diagram of the positional relationship between the charged particle beam device and the semiconductor structure provided in some embodiments of the present application;

[0030] Figure 4 Schematic diagram of the structure of the deflector provided in some embodiments of the present application;

[0031] Figure 5 Schematic diagram of the structure of the deflection through hole provided in some embodiments of the present application;

[0032] Figure 6Schematic structural diagram of a deflected via hole provided in some other embodiments of the present application;

[0033] Figure 7 Schematic structural diagram of a deflector provided in some other embodiments of the present application;

[0034] Figure 8 Flowchart of steps of a method for manufacturing a charged particle beam device provided in some embodiments of the present application;

[0035] Figure 9 Flowchart of steps of a method for manufacturing a charged particle beam device provided in some other embodiments of the present application;

[0036] Figure 10 Flowchart of steps of a method for manufacturing a charged particle beam device provided in some other embodiments of the present application;

[0037] Figure 11 Schematic structural diagram of a first substrate and an interlayer dielectric layer provided in some embodiments of the present application;

[0038] Figure 12 Schematic structural diagram of a first substrate and a metal interconnect layer provided in some other embodiments of the present application;

[0039] Figure 13 Schematic structural diagram of a first substrate and a metal interconnect layer provided in some embodiments of the present application;

[0040] Figure 14 Flowchart of steps of a method for manufacturing a charged particle beam device provided in some other embodiments of the present application;

[0041] Figure 15 Schematic structural diagram of a third substrate, an etch stop layer, and an electrode layer provided in some embodiments of the present application;

[0042] Figure 16 Schematic structural diagram of a third substrate, an etch stop layer, and a deflection electrode provided in some embodiments of the present application;

[0043] Figure 17 Flowchart of steps of a method for manufacturing a charged particle beam device provided in some other embodiments of the present application;

[0044] Figure 18 Schematic diagram of the positional relationship between a third substrate, an etch stop layer, a deflection electrode, a metal interconnect layer, and a first substrate provided in some embodiments of the present application;

[0045] Figure 19 Flowchart of steps of a method for manufacturing a charged particle beam device provided in some other embodiments of the present application;

[0046] Figure 20Schematic diagram of the second substrate and the electrode layer provided by some embodiments of the present application;

[0047] Figure 21 Schematic diagram of the deflection electrode, the second substrate and the metal interconnection layer provided by some embodiments of the present application. Detailed implementation manners

[0048] The following will clearly and completely describe the technical solutions in some embodiments of the present disclosure with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by those of ordinary skill in the art belong to the scope of protection of the present disclosure.

[0049] Unless otherwise required by the context, throughout the specification and claims, the term "comprising" is interpreted in an open, inclusive sense, i.e., "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "examples" or "some examples", etc., are intended to indicate that the specific features, structures, materials or characteristics related to the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representations of the above terms are not necessarily directed to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any suitable manner.

[0050] Hereinafter, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the embodiments of the present disclosure, unless otherwise stated, the meaning of "a plurality" is two or more.

[0051] "At least one of A, B, and C" has the same meaning as "at least one of A, B, or C", and all include the following combinations of A, B, and C: only A, only B, only C, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

[0052] "A and / or B" includes the following three combinations: only A, only B, and the combination of A and B.

[0053] As used herein, "parallel", "perpendicular", and "equal" include the stated cases and cases similar to the stated cases, where the range of the similar cases is within an acceptable deviation range, and the acceptable deviation range is determined by a person of ordinary skill in the art considering the measurement under discussion and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, where the acceptable deviation range for approximate parallelism can be, for example, within a deviation of 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, where the acceptable deviation range for approximate perpendicularity can also be, for example, within a deviation of 5°. "Equal" includes absolute equality and approximate equality, where the acceptable deviation range for approximate equality can be, for example, that the difference between the two equal ones is less than or equal to 5% of either one.

[0054] Figure 1 Schematic diagram of the positional relationship between the charged particle beam device and the semiconductor structure provided for some embodiments of the present application. Figure 2 Schematic diagram of the structure of the via array provided for some embodiments of the present application.

[0055] As Figure 1 shown, an embodiment of the present application provides a charged particle beam device 100, and the charged particle beam device 100 is widely used in the semiconductor field. By way of example, the charged particle beam device 100 can perform operations such as electron beam lithography (English full name: electron beam lithography, English abbreviation: EBL), electron beam defect inspection (English full name: electrons beam inspection, English abbreviation: EBI), and critical dimension measurement on the semiconductor structure 300, and belongs to an essential machine tool in the semiconductor manufacturing process.

[0056] The charged particle beam device 100 can emit charged particles. As Figure 1 shown, the semiconductor structure 300 is located on one side of the charged particle beam device 100 along the third direction Z, and the charged particle beam N emitted by the charged particle beam device 100 can move along the third direction Z and act on the semiconductor structure 300. It can be understood that the charged particle beam N can be deflected in the XY plane to achieve functions such as lithography, detection, and measurement of the semiconductor structure 300. The third direction Z is perpendicular to the XY plane.

[0057] Taking the critical dimension measurement of the semiconductor structure 300 by the charged particle beam device 100 as an example, the charged particle beam device 100 can be a critical dimension scanning electron microscope (full English name: critical dimension scanning electron microscopy, English abbreviation: CD-SEM) at this time. Exemplarily, after measuring the critical dimension, the semiconductor structure 300 can be adjusted according to requirements so that the critical dimension of the semiconductor structure 300 can meet the requirements (English: inline).

[0058] The embodiments of the present application do not further limit the functions that the charged particle beam device 100 can achieve and the specific form of the charged particle beam device 100, etc. The structure of the charged particle beam device 100 will be exemplified below.

[0059] In some examples, such as Figure 1 shown, the charged particle beam device 100 includes a charged particle source 110, and the charged particle source 110 is configured to emit a charged particle beam N.

[0060] Exemplarily, the charged particle beam device 100 may include one charged particle source 110, or the charged particle beam device 100 may also include multiple charged particle sources 110. One charged particle source 110 can emit one charged particle beam N. The semiconductor structure 300 is located on the emission side of the charged particle source 110 so that the charged particle beam N emitted by the charged particle source 110 can act on the semiconductor structure 300.

[0061] It can be understood that the charged particle beam N emitted by the charged particle source 110 is divergent. Exemplarily, such as Figure 1 shown, the charged particle beam device 100 further includes a collimating lens 141. The collimating lens 141 is located on the emission side of the charged particle source 110 and is used to collimate the charged particle beam N emitted by the charged particle source 110. Exemplarily, the collimating lens 141 can be a magnetic lens and has a collimating magnetic field. The charged particle beam N emitted by the charged particle source 110 can pass through the collimating magnetic field and be collimated under the magnetic force of the collimating magnetic field.

[0062] In some examples, such as Figure 1 shown, the charged particle beam device 100 further includes a through-hole array 120, and the through-hole array 120 is located on the emission side of the charged particle source 110. Exemplarily, the through-hole array 120 is located on the side of the collimating lens 141 away from the charged particle source 110 along the third direction Z. Such as Figure 2 shown, the through-hole array 120 includes a plurality of first through-holes M1, and the charged particle beam N passes through at least two first through-holes M1.

[0063] Such as Figure 2As shown, the through-hole array 120 includes a body 121, and the first through-hole M1 penetrates the body 121 along the thickness direction of the body 121. By way of example, a plurality of first through-holes M1 may be arranged in an array. The shape of the first through-hole M1 may be cylindrical, prismatic, cuboid, or other irregular shapes. The shapes of the plurality of first through-holes M1 are the same. Embodiments of the present application do not further limit the shape and arrangement manner of the first through-hole M1, etc.

[0064] It can be understood that the through-hole array 120 is located on the emission side of the charged particle source 110, such that the charged particle beam N emitted by the charged particle source 110 can pass through at least two first through-holes M1. By way of example, the charged particle beam N emitted by the charged particle source 110 may pass through a part (two, three, or more) of the plurality of first through-holes M1, or the charged particle beam N emitted by the charged particle source 110 may also pass through each of the plurality of first through-holes M1.

[0065] As Figure 1 shown, after the charged particle beam N passes through at least two first through-holes M1, it can be divided into at least two charged particle beams N. For example, when the charged particle beam N emitted by the charged particle source 110 passes through two first through-holes M1, it can be divided into two charged particle beams N; when the charged particle beam N emitted by the charged particle source 110 passes through three first through-holes M1, it can be divided into three charged particle beams N; when the charged particle beam N emitted by the charged particle source 110 passes through four first through-holes M1, it can be divided into four charged particle beams N; and so on. Embodiments of the present application do not further limit the number of first through-holes M1 through which the charged particle beam N passes.

[0066] It can be understood that the through-hole array 120 is arranged on the emission side of the charged particle source 110, such that the through-hole array 120 can divide one charged particle beam N emitted by the charged particle source 110 into at least two charged particle beams N, that is, such that the charged particle beam device 100 can be a multi-beam electron optical system (full English name: multi beam electron opticssystem, English abbreviation: MBEOS). Compared with a single-particle beam optical system, the multi-beam electron optical system has higher resolution and efficiency, improving the performance of the charged particle beam device 100.

[0067] In some examples, as Figure 1 shown, the charged particle beam device 100 further includes a deflector 130, and the deflector 130 is located on the side of the through-hole array 120 away from the charged particle source 110. It can be understood that the deflector 130 and the through-hole array 120 are spaced apart along the third direction Z.

[0068] The deflector 130 has a deflection through-hole Q. The deflector 130 is disposed on the side of the through-hole array 120 away from the charged particle source 110, such that the charged particle beam N passing through the through-hole array 120 can pass through the deflection through-hole Q. Understandably, the deflector 130 can control the deflection direction of the charged particle beam N passing through the deflection through-hole Q in the XY plane, and the deflector 130 can also perform astigmatism correction on the charged particle beam N passing through the deflection through-hole Q. That is to say, the deflector 130 can also be an astigmatism corrector (English: stigmator).

[0069] In some examples, as Figure 1 shown, the charged particle beam device 100 further includes a focusing lens 142 and a projection lens 143. The focusing lens 142 is located on the side of the deflector 130 away from the through-hole array 120, and the projection lens 143 is located on the side of the focusing lens 142 away from the deflector 130.

[0070] Understandably, after passing through the deflector 130, the charged particle beam N can pass through the focusing lens 142, and the focusing lens 142 serves to converge the charged particles in the charged particle beam N. For example, the focusing lens 142 can be a magnetic lens and has a focusing magnetic field. The charged particle beam N passes through the focusing magnetic field and is converged under the magnetic force of the focusing magnetic field. For example, the focusing lens 142 can include a plurality of sub-lenses, and the plurality of sub-lenses are stacked.

[0071] As Figure 1 shown, after passing through the focusing lens 142, the charged particle beam N can pass through the projection lens 143, and the projection lens 143 projects the charged particle beam N onto the semiconductor structure 300 according to a set pattern. For example, the projection lens 143 can be a magnetic lens and has a projection magnetic field. The charged particle beam N can pass through the projection magnetic field and is projected onto the semiconductor structure 300 under the magnetic force of the projection magnetic field. For example, the projection lens 143 can include a plurality of sub-lenses, and the plurality of sub-lenses are stacked.

[0072] Understandably, Figure 1 only a part of the components included in the charged particle beam device 100 is shown, and the charged particle beam device 100 can include other components in addition to Figure 1 the components shown. Of course, Figure 1 the number and arrangement positions of these components shown can also vary.

[0073] In some examples, the charged particle beam device 100 may include a plurality of deflectors 130. One deflector 130 is located on the side of the through-hole array 120 away from the charged particle source 110, and the other deflector 130 is located on the side of the projection lens 143 away from the charged particle source 110. In some examples, the charged particle beam device 100 may include a plurality of through-hole arrays 120, and the number and setting positions of the first through-holes M1 included in different through-hole arrays 120 are different.

[0074] In the embodiments of the present application, the components included in the charged particle beam device 100, as well as the setting positions of each component, etc. are not limited to Figure 1 the situation shown. The embodiments of the present application do not further limit the components included in the charged particle beam device 100, as well as the setting positions of each component, etc. Hereinafter, the structure of the deflector 130 in some cases will be exemplified.

[0075] For a single electron beam optical system, a magnetic lens is usually used as the deflector 130 to control the deflection of the charged particle beam N in the XY plane or perform astigmatism correction on the charged particle beam N by applying an external deflection magnetic field. Alternatively, a metal structure can also be used as an electrode, and a voltage is applied to the metal structure so that a deflection electric field can be formed between different metal structures, and the deflection of the charged particle beam N in the XY plane or the astigmatism correction of the charged particle beam N is controlled by applying an external deflection electric field.

[0076] With the continuous development of semiconductor processes, the requirements for the measurement efficiency and resolution of semiconductor structures are getting higher and higher. In the production and preparation process of semiconductor structures, a multi-particle beam optical system is usually required. The multi-particle beam optical system has higher requirements for the consistency of the morphology between different deflected through-holes Q. Especially when the number of deflected through-holes Q is large, it is necessary to control the morphology of each deflected through-hole Q and improve the morphology consistency of multiple deflected through-holes Q, so as to improve the consistency of the physical behaviors (such as the deflection direction in the XY plane) between different charged particle beams N.

[0077] Exemplarily, the deflector 130 can be processed by a micro-electro-mechanical systems (MEMS) process (also known as micro-nano processing, full English name: micro-electro-mechanical systems, English abbreviation: MEMS) to improve the morphology consistency between different deflected through-holes Q.

[0078] In some examples, as Figure 1 shown, the deflector 130 may include a metal interconnection layer 131, and the metal interconnection layer 131 includes an interlayer dielectric layer 1312 and a plurality of metal traces 1313, and the plurality of metal traces 1313 are embedded in the interlayer dielectric layer 1312.

[0079] Exemplarily, the interlayer dielectric layer 1312 can be an insulating material to play a role in electrical isolation. The material of the interlayer dielectric layer 1312 can include silicon nitride, silicon oxynitride, doped silicon oxide, organosilicate glass, dielectric metal oxides (such as aluminum oxide, hafnium dioxide, etc.) and their silicic acids. The material of the metal trace 1313 can be copper to improve the electrical conductivity of the metal trace 1313. Alternatively, the material of the metal trace 1313 can also be other metals, such as gold, silver, aluminum, etc.

[0080] As Figure 1 shown, the metal interconnect layer 131 can also include multiple electronic devices 1311. The multiple electronic devices 1311 are embedded in the interlayer dielectric layer 1312, and the multiple electronic devices 1311 are electrically connected to the multiple metal traces 1313. Exemplarily, the electronic device 1311 can include a switching element (such as a complementary metal oxide semiconductor transistor, complementary metal oxide semiconductor, abbreviated in English: CMOS) and a capacitor, etc. The types of the multiple electronic devices 1311 can be the same or different.

[0081] In some examples, the multiple electronic devices 1311 can include multiple switching elements, and the multiple switching elements and the multiple metal traces 1313 can be electrically connected in a one-to-one correspondence. In other examples, other electronic devices 1311 except the switching elements can also be electrically connected to the metal traces 1313. The embodiments of the present application do not further limit the number and types of the electronic devices 1311 electrically connected to the metal traces 1313.

[0082] In some examples, the metal interconnect layer 131 is generally processed by the MEMS method. The manufacturing process of the metal interconnect layer 131 includes a front-end process (full English name: front end of line, abbreviated in English: FEOL) and a back-end process (full English name: back end of line, abbreviated in English: BEOL). The FEOL manufactures the electronic devices 1311 (such as CMOS transistors), and the BEOL manufactures the metal traces 1313.

[0083] In some possible cases, the metal trace 1313 of the BEOL can be used as a deflection electrode to control the movement trajectory of the charged particle beam N.As Figure 1As shown, at least two metal traces 1313 can enclose a deflection via Q. The deflector 130 further includes an active driving circuit (not shown in the figure). The active driving circuit supplies power to the metal traces 1313 through electronic devices 1311, so that a deflection electric field can be formed between at least two metal traces 1313 enclosing the deflection via Q, that is, a deflection electric field can be formed inside the deflection via Q, thereby enabling control of the deflection of the charged particle beam N passing through the deflection via Q in the XY plane or performing astigmatism correction on the charged particle beam N passing through the deflection via Q.

[0084] However, the thickness of the metal interconnect layer 131 is usually relatively thin, generally below 10 μm (unit: micrometer), and limited by the BEOL process, the thickness of the metal interconnect layer 131 usually cannot be increased continuously. This will result in a limited height of the deflection electrode 132 along the third direction Z, that is, a limited depth of the deflection via Q along the third direction Z, affecting the control ability of the deflection electrode 132 for the charged particle beam N.

[0085] In some possible cases, it is necessary to design the active driving circuit according to the requirements of the specific charged particle beam device 100, so that the active driving circuit can provide a relatively large driving voltage for the metal traces 1313, thereby increasing the intensity of the deflection electric field and improving the control ability of the deflector 130 for the charged particle beam N.

[0086] However, this will lead to an increase in the power consumption and heat generation of the deflector 130, affecting the reliability of the deflector 130. Moreover, one charged particle beam N passes through one deflection via Q. The more the number of charged particle beams N, the more the number of deflection vias Q and the greater the power consumption of the deflector 130. When the power consumption remains unchanged, it is necessary to reduce the number of charged particle beams N, limiting the efficiency and resolution of the charged particle beam device 100.

[0087] That is, for a multi-electron beam optical system, if the metal traces 1313 are used as the deflection electrodes, it will affect the control ability of the deflector 130 for the charged particle beam N and lead to an increase in power consumption, affecting the reliability of the deflector 130.

[0088] Figure 3 Schematic diagram of the positional relationship between the charged particle beam device and the semiconductor structure provided by some embodiments of the present application. Figure 4 Schematic diagram of the structure of the deflector provided by some embodiments of the present application. Figure 5 Schematic diagram of the structure of the deflection via provided by some embodiments of the present application. Figure 6 Schematic diagram of the structure of the deflection via provided by other embodiments of the present application. Figure 7 Schematic diagram of the structure of the deflector provided by other embodiments of the present application.

[0089] Based on this, as Figure 3 shown, an embodiment of the present application provides a charged particle beam device 100. The charged particle beam device 100 includes a charged particle source 110, a through-hole array 120, and a deflector 130. The charged particle source 110 is configured to emit a charged particle beam N. The through-hole array 120 is located on the emission side of the charged particle source 110. The through-hole array 120 includes a plurality of first through-holes M1, and the charged particle beam N passes through at least two first through-holes M1. The deflector 130 is located on the side of the through-hole array 120 away from the charged particle source 110.

[0090] It can be understood that the above embodiments of the present application have illustrated the charged particle source 110, the through-hole array 120, and other components of the charged particle beam device 100, etc., and will not be elaborated here. The deflector 130 will be illustrated below.

[0091] In some examples, as Figure 3 and Figure 4 shown, the deflector 130 includes a metal interconnection layer 131 and a plurality of deflection electrodes 132 arranged at intervals, and the plurality of deflection electrodes 132 are respectively electrically connected to the metal interconnection layer 131. Among them, at least two deflection electrodes 132 enclose a deflection through-hole Q, and the charged particle beam N passes through the deflection through-hole Q.

[0092] Exemplarily, the shape of the deflection electrode 132 can be a cuboid, or a cube or other shapes. The shapes of the plurality of deflection electrodes 132 can be the same or different. It can be understood that the number of deflection through-holes Q is multiple, that is, the plurality of deflection electrodes 132 can enclose a plurality of deflection through-holes Q. Exemplarily, the number of deflection through-holes Q is the same as the number of charged particle beams N, and one charged particle beam N passes through one deflection through-hole Q. The deflection through-hole Q can control the deflection direction of the charged particle beam N in the XY plane, and the deflection through-hole Q can perform an astigmatism correction function on the charged particle beam N passing through the deflection through-hole Q.

[0093] In some examples, the shape of the deflection through-hole Q is a prism, a cylinder or a cuboid, and the shapes of the plurality of deflection through-holes Q are the same.

[0094] When the shape of the deflection through-hole Q is a prism, as Figure 5 shown, the opening shape of the deflection through-hole Q (i.e., the bottom shape of the prism) can be an octagon, and at this time eight deflection electrodes 132 enclose the deflection through-hole Q. Or, when the shape of the deflection through-hole Q is a prism, the opening shape of the deflection through-hole Q can also be a hexagon, and at this time six deflection electrodes 132 enclose the deflection through-hole Q. When the shape of the deflection through-hole Q is a cylinder, the opening shape of the deflection through-hole Q can be a circle. At this time, at least two fan-shaped deflection electrodes enclose the deflection through-hole Q.

[0095] When the shape of the deflected via hole Q is a prism or a cylinder, multiple deflected via holes Q can be arranged along the first direction X and the second direction Y (see Figure 5 ). Understandably, in the first direction X, multiple deflected via holes Q can be arranged in a row, or multiple deflected via holes Q can also be arranged staggeredly. In the second direction Y, multiple deflected via holes Q can be arranged in a column, or multiple deflected via holes Q can also be arranged staggeredly. The first direction X is perpendicular to the second direction Y.

[0096] When the shape of the deflected via hole Q is a cuboid, as shown in Figure 6 , the opening shape of the deflected via hole Q is a rectangle or a square, and two deflection electrodes 132 enclose the deflected via hole Q. Multiple deflected via holes Q can be arranged along the first direction X. Exemplarily, in the second direction Y, the two deflection electrodes 132 enclosing the deflected via hole Q can be partially arranged staggeredly. At this time, the length of the deflected via hole Q in the second direction Y is the length of the relative arrangement of the two deflection electrodes 132 enclosing the deflected via hole Q in the second direction Y. Or, in the second direction Y, the two deflection electrodes 132 enclosing the deflected via hole Q can also be arranged in alignment.

[0097] Understandably, the embodiments of the present application do not further limit the arrangement manner of multiple deflected via holes Q, the setting positions of multiple deflection electrodes 132, etc.

[0098] Setting the shape of the deflected via hole Q as a prism, a cylinder or a cuboid can improve the flexibility of the shape of the deflected via hole Q and meet different requirements. Setting the number of deflected via holes Q as multiple enables the deflection electric field in one deflected via hole Q to control the deflection direction of a charged particle beam N in the XY plane and play an astigmatism correction role for the charged particle beam N, so that the deflector 130 can realize the individual control (English full name: individual beam control, English abbreviation: IBC) of each charged particle beam N. Setting the shapes of multiple deflected via holes Q to be consistent can improve the consistency of the physical behaviors between multiple charged particle beams N.

[0099] In the embodiments of the present application, the deflection electrode 132 is electrically connected to the metal interconnection layer 131, so that an external active drive circuit can supply power to the deflection electrode 132 through the metal interconnection layer 131, so that a deflection electric field can be formed in the deflected via hole Q enclosed by at least two deflection electrodes 132 to control the deflection direction of the charged particle beam N passing through the deflected via hole Q in the XY plane and can perform astigmatism correction on the charged particle beam N passing through the deflected via hole Q.

[0100] That is, in the embodiments of the present application, it is not necessary to use the metal traces 1313 in the metal interconnect layer 131 as the deflection electrodes, reducing the limitation of the metal interconnect layer 131 on the height of the deflection electrode 132 in the third direction Z (the direction from the charged particle source 110 to the via array 120). In this way, the height of the deflection electrode 132 in the third direction Z can be increased as needed, that is, the depth of the deflection via Q can be increased as needed, improving the control ability of the deflection electrode 132 for the charged particle beam N. For example, the deflection ability of the deflection electrode 132 to control the charged particle beam N in the XY plane and the ability of the deflection electrode 132 to perform astigmatism correction on the charged particle beam N. Moreover, by adopting the above method, it is not necessary to increase the driving voltage, reducing the power consumption and heat generation of the deflector 130, reducing the risk that the deflector 130 cannot work properly due to excessive temperature, and improving the reliability of the deflector 130.

[0101] It can be understood that the deflection electrode 132 is electrically connected to the metal interconnect layer 131 to reduce the influence of the metal interconnect layer 131 on the height of the deflection electrode 132 in the third direction Z, improve the control ability of the deflection electrode 132 for the charged particle beam N, and be applicable to deflection electrodes 132 of different shapes (such as long strip or fan-shaped ring), so as to be applicable to deflected vias Q of different shapes and meet different requirements.

[0102] In some examples, multiple metal traces 1313 are electrically connected to multiple deflection electrodes 132 in a one-to-one correspondence.

[0103] With such a setting, the active driving circuit can provide driving voltages for the multiple deflection electrodes 132 respectively through the multiple metal traces 1313, reducing the mutual influence between the multiple deflection electrodes 132.

[0104] In some examples, along the direction from the charged particle source 110 to the via array 120 (i.e., the third direction Z), the height of the deflection electrode 132 ranges from 100 μm (unit: micrometer) to 500 μm.

[0105] Exemplarily, along the direction from the charged particle source 110 to the via array 120 (i.e., the third direction Z), the height of the deflection electrode 132 can range from 150 μm to 450 μm, 200 μm to 400 μm, or 250 μm to 350 μm, etc. Along the direction from the charged particle source 110 to the via array 120 (i.e., the third direction Z), the height of the deflection electrode 132 can be 180 μm, 220 μm, 280 μm, 320 μm, 430 μm, etc. The embodiments of the present application do not further limit the value of the height of the deflection electrode 132 in the third direction Z.

[0106] Understandably, setting the height range of the deflection electrode 132 in the third direction Z to be 100 μm to 500 μm can prevent the volume of the deflector 130 from being too large due to the excessive height of the deflection electrode 132 in the third direction Z (for example, greater than 500 μm), and can also prevent the control effect of the deflection electrode 132 on the charged particle beam N from being affected due to the too small height of the deflection electrode 132 in the third direction Z (for example, less than 100 μm).

[0107] In some examples, the value range of the ratio of the height of the deflection electrode 132 in the direction from the charged particle source 110 to the through-hole array 120 (i.e., the third direction Z) to the aperture diameter of the deflection through-hole Q is 10 to 20.

[0108] Understandably, the length of the deflection electrode 132 in the third direction Z affects the depth of the deflection through-hole Q. The greater the length of the deflection electrode 132 in the third direction Z, the greater the depth of the deflection through-hole Q, and the stronger the control ability of the deflection electrode 132 for electrons. The smaller the length of the deflection electrode 132 in the third direction Z, the smaller the depth of the deflection through-hole Q, and the weaker the control ability of the deflection electrode 132 for electrons.

[0109] For example, when the opening of the deflection through-hole Q is octagonal, hexagonal or circular, the aperture diameter of the deflection through-hole Q is the diameter of the above shape. When the opening shape of the deflection through-hole Q is rectangular, the aperture diameter of the deflection through-hole Q is the distance between the two deflection electrodes 132 enclosing the deflection through-hole Q.

[0110] Setting the value range of the ratio of the height of the deflection electrode 132 to the aperture diameter of the deflection through-hole Q to be 10 to 20 can prevent the ratio of the height of the deflection electrode 132 to the aperture diameter of the deflection through-hole Q from being too large (for example, greater than 20), which may cause the deflection electrode 132 to be too high and affect the volume of the deflector 130. Moreover, it can also prevent the ratio of the height of the deflection electrode 132 to the aperture diameter of the deflection through-hole Q from being too small (for example, less than 10), which may affect the control effect of the deflection electrode 132 on the charged particle beam N.

[0111] That is to say, setting the value range of the ratio of the height of the deflection electrode 132 to the aperture diameter of the deflection through-hole Q to be 10 to 20 can increase the ratio of the depth to the width (i.e., the aperture diameter) of the deflection through-hole Q. Considering the control ability of the deflection electrode 132 for the charged particle beam N from both the depth of the deflection through-hole Q and the aperture diameter of the deflection through-hole Q, it can reduce the volume of the deflector 130 on the basis of improving the control ability of the deflection electrode 132 for the charged particle beam N, which is beneficial to the miniaturization of the deflector 130.

[0112] Exemplarily, the value of the ratio of the height of the deflection electrode 132 to the aperture diameter of the deflection via Q can be 13, 15, 18, etc. The embodiments of the present application do not further limit the value of the ratio of the height of the deflection electrode 132 to the aperture diameter of the deflection via Q, nor the value of the aperture diameter of the deflection via Q.

[0113] In some examples, the material of the deflection electrode 132 includes silicon with a doping concentration greater than or equal to 10E19 / cm 3 .

[0114] With such a setting, the resistance of the deflection electrode 132 can be reduced, and the control ability of the deflection electrode 132 for the charged particle beam N passing through the deflection via Q can be improved. Exemplarily, the resistivity of the deflection electrode 132 is less than or equal to 0.001 Ω·cm (unit: ohm value per centimeter).

[0115] In some other examples, the deflection electrode 132 may also include other semiconductor materials.

[0116] In some examples, as Figure 4 shown, the metal interconnect layer 131 is provided with a second through hole M2, and the second through hole M2 penetrates the metal interconnect layer 131 along the thickness direction of the metal interconnect layer 131. The second through hole M2 communicates with the deflection via Q. It can be understood that the second through hole M2 is provided on the interlayer dielectric layer 1312 and penetrates the interlayer dielectric layer 1312 along the thickness direction of the interlayer dielectric layer 1312, and the second through hole M2 can avoid the metal traces 1313 and the electronic devices 1311 embedded in the interlayer dielectric layer 1312.

[0117] Exemplarily, the number of the second through holes M2 is the same as the number of the deflection vias Q, and the arrangement positions of the second through holes M2 correspond to the arrangement positions of the deflection vias Q, so that the second through holes M2 and the deflection vias Q can be connected in a one-to-one correspondence. It can be understood that setting the second through hole M2 to communicate with the deflection via Q enables the charged particle beam N to pass through the second through hole M2 and the deflection via Q, avoiding the metal interconnect layer 131 from blocking the charged particle beam N.

[0118] It can be understood that when the deflection electrode 132 is closer to the charged particle source 110 relative to the metal interconnect layer 131, the charged particle beam N sequentially passes through the deflection via Q and the second through hole M2 along the third direction Z. On the contrary, when the deflection electrode 132 is farther from the charged particle source 110 relative to the metal interconnect layer 131, the charged particle beam N sequentially passes through the second through hole M2 and the deflection via Q along the third direction Z.

[0119] In some examples, as Figure 4 shown, the deflector 130 further includes a first substrate 133, and the first substrate 133 is located on the side of the metal interconnect layer 131 away from the plurality of deflection electrodes 132.

[0120] Exemplarily, the material of the first substrate 133 includes at least one of single-crystalline silicon, polycrystalline silicon, single-crystalline germanium, III-V compound semiconductor materials, II-VI compound semiconductor materials, or other semiconductor materials known in the art. In some examples, the first substrate 133 may be a silicon-on-insulator wafer (SOI wafer). The first substrate 133 may be a single-layer structure, or the first substrate 133 may also be a multi-layer composite structure.

[0121] It can be understood that the first substrate 133 can play a role in supporting the metal interconnection layer 131 and reduce the risk of damage to the metal interconnection layer 131. Exemplarily, the thickness of the first substrate 133 is greater than the thickness of the metal interconnection layer 131.

[0122] In some examples, as Figure 4 shown, the first substrate 133 is provided with a through window P, and the through window P penetrates the first substrate 133 along the thickness direction of the first substrate 133, and the through window P is communicated with the second through hole M2.

[0123] It can be understood that the number of the through windows P is the same as the number of the second through holes M2, and the setting positions of the through windows P correspond to the setting positions of the second through holes M2, so that the through windows P and the second through holes M2 can be communicated in one-to-one correspondence. The second through hole M2 is communicated with the deflected through hole Q, and the through window P is communicated with the second through hole M2, so that the through window P, the second through hole M2, and the deflected through hole Q can be communicated, so that the charged particle beam N can pass through the through window P, the second through hole M2, and the deflected through hole Q, avoiding the first substrate 133 from blocking the charged particle beam N.

[0124] In some examples, the closed figure enclosed by the positive projection of the edge of the second through hole M2 on the first substrate 133 is located within the closed figure enclosed by the edge of the through window P.

[0125] It can be understood that when the number of charged particles hitting the side wall of the through window P is large, an electric field will be formed in the through window P. The electric field affects the deflection direction of the charged particle beam N passing through the through window P in the XY plane, thereby affecting the performance of the charged particle beam device 100. Exemplarily, the above phenomenon can be referred to as the charging effect.

[0126] Therefore, the closed figure surrounded by the orthographic projection of the edge of the second through hole M2 on the first substrate 133 is located within the closed figure surrounded by the edge of the through window P, that is, the opening area of the through window P is larger than the opening area of the second through hole M2, reducing the number of charged particles that the charged particle beam N hits on the side wall of the through window P when passing through the through window P, improving the charging effect, and enhancing the performance of the charged particle beam device 100.

[0127] Exemplarily, after forming the interlayer dielectric layer 1312 and the multiple metal traces 1313 embedded in the interlayer dielectric layer 1312, the interlayer dielectric layer 1312 and the first substrate 133 can be subjected to secondary MEMS processing to form the second through hole M2 penetrating the interlayer dielectric layer 1312 and the through window P penetrating the first substrate 133.

[0128] In some examples, the multiple deflection electrodes 132, the metal interconnection layer 131, and the first substrate 133 can be encapsulated together to form a deflection chip (or an astigmatism correction chip). It can be understood that the deflection chip is a passive electrode chip. The active drive circuit can be encapsulated as an active drive chip, and the active drive chip is electrically connected to the passive electrode chip to form an active electrode chip.

[0129] In some examples, the multiple deflection electrodes 132 are hybrid bonded (English: hybrid bonding) to the metal interconnection layer 131.

[0130] Exemplarily, as Figure 4 shown, the deflection electrode 132 can be connected to the first bonding metal (English: bonding pad) 138. The metal interconnection layer 131 can include a second bonding metal 1314, and the second bonding metal 1314 is electrically connected to the metal trace 1313. The first bonding metal 138 and the second bonding metal 1314 are hybrid bonded, enabling the deflection electrode 132 to be hybrid bonded to the metal interconnection layer 131, forming a path between the deflection electrode 132 and the metal trace 1313, so that the active drive circuit can supply power to the deflection electrode 132 through the metal trace 1313.

[0131] Setting the multiple deflection electrodes 132 to be electrically connected to the metal interconnection layer 131 by hybrid bonding can improve the convenience and reliability of the electrical connection between the two.

[0132] In some examples, the metal interconnection layer 131 further includes a third bonding metal 1315, and the third bonding metal 1315 is electrically connected to the metal trace 1313. The active drive chip is hybrid bonded to the third bonding metal 1315, enabling the active drive circuit to be electrically connected to the deflection electrode 132 through the metal trace 1313.

[0133] Understandably, the embodiments of the present application do not further limit the setting positions of the first bonding metal 138, the second bonding metal 1314, and the third bonding metal 1315.

[0134] In some other examples, the active driving chip and the metal trace 1313 can also be electrically connected through a trace structure. The embodiments of the present application do not further limit the manner of electrical connection between the active driving chip and the metal trace 1313.

[0135] In some other examples, as Figure 7 shown, the deflector 130 further includes a second substrate 134, and the second substrate 134 is located between the plurality of deflection electrodes 132 and the metal interconnection layer 131. The second substrate 134 is provided with a third through hole M3, and the third through hole M3 penetrates the second substrate 134 along the thickness direction of the second substrate 134. The third through hole M3 communicates with the second through hole M2 and the deflection through hole Q.

[0136] Exemplarily, the material of the second substrate 134 includes at least one of single crystal silicon, polycrystalline silicon, single crystal germanium, III-V compound semiconductor materials, II-VI compound semiconductor materials, or other semiconductor materials known in the art. The materials of the second substrate 134 and the first substrate 133 may be the same or different. The second substrate 134 may be a single-layer structure, or the second substrate 134 may also be a multi-layer composite structure.

[0137] Exemplarily, a plurality of deflection electrodes 132 may be formed on one side of the second substrate 134, a metal interconnection layer 131 may be formed on the other side of the second substrate 134, and a third through hole M3 may be opened on the second substrate 134, so that the third through hole M3 can communicate with the second through hole M2 and the deflection through hole Q. The number of the third through holes M3, the second through holes M2, and the deflection through holes Q is the same, and the plurality of third through holes M3 can communicate the plurality of second through holes M2 and the plurality of deflection through holes Q in a one-to-one correspondence.

[0138] Understandably, setting the second substrate 134 between the plurality of deflection electrodes 132 and the metal interconnection layer 131 enables the second substrate 134 to play a role of supporting and carrying the metal interconnection layer 131, reducing the risk of damage to the metal interconnection layer 131. Setting the third through hole M3 to communicate with the second through hole M2 and the deflection through hole Q enables the charged particle beam N to pass through the deflection through hole Q, the third through hole M3, and the second through hole M2, avoiding the second substrate 134 from blocking the charged particle beam N.

[0139] In some examples, as Figure 7 shown, the second substrate 134 is provided with a through-silicon via T, and the through-silicon via T penetrates the second substrate 134 and is electrically connected to the plurality of deflection electrodes 132 and the metal interconnection layer 131.

[0140] Such a setting enables electrical connection between the multiple deflection electrodes 132 and the multiple metal traces 1313 of the metal interconnection layer 131 through the through-silicon vias T, improving the convenience of electrical connection between the two. Exemplarily, the number of through-silicon vias T, deflection electrodes 132, and metal traces 1313 is the same, and the multiple through-silicon vias T can electrically connect the multiple deflection electrodes 132 and the multiple metal traces 1313 in a one-to-one correspondence.

[0141] Exemplarily, the third bonding metal 1315 can be electrically connected to the metal trace 1313 through the through-silicon via T.

[0142] It can be understood that the electrical connection between the deflection electrode 132 and the metal trace 1313 is achieved by hybrid bonding, or the electrical connection between the deflection electrode 132 and the metal trace 1313 is achieved through the through-silicon via T, improving the flexibility of electrical connection between the two.

[0143] In some examples, as Figure 3 shown, the multiple deflection electrodes 132 are closer to the via array 120 relative to the metal interconnection layer 131.

[0144] It can be understood that when the deflector 130 includes the first substrate 133, the multiple deflection electrodes 132 are closer to the via array 120 relative to the metal interconnection layer 131, enabling the charged particle beam N to sequentially pass through the deflected via Q, the second via M2, and the transmission window P. When the deflector 130 includes the second substrate 134, the multiple deflection electrodes 132 are closer to the via array 120 relative to the metal interconnection layer 131, enabling the charged particle beam N to sequentially pass through the deflected via Q, the third via M3, and the second via M2.

[0145] That is, setting the multiple deflection electrodes 132 closer to the via array 120 relative to the metal interconnection layer 131 enables the charged particle beam N to first pass through the deflected via Q and then through the second via M2, reducing the number of charged particles hitting the sidewall of the second via M2, improving the charging effect, and enhancing the performance of the charged particle beam device 100.

[0146] Figure 8 This is a flowchart of the steps of a method for manufacturing a charged particle beam device provided by some embodiments of the present application.

[0147] On the other hand, embodiments of the present application provide a method for manufacturing a charged particle beam device. Exemplarily, the method for manufacturing a charged particle beam device can be used to manufacture the charged particle beam device as described above.

[0148] As Figure 8 shown, the method for manufacturing a charged particle beam device includes:

[0149] Step S1, providing a charged particle source configured to emit a charged particle beam.

[0150] Step S2: Provide a via hole array on the emission side of the charged particle source. The via hole array includes a plurality of first via holes, and the charged particle beam passes through at least two first via holes.

[0151] Step S3: Form a deflector on the side of the via hole array away from the charged particle source. The deflector includes a metal interconnection layer and a plurality of deflection electrodes arranged at intervals, and the plurality of deflection electrodes are electrically connected to the metal interconnection layer respectively. Among them, at least two deflection electrodes enclose a deflection via hole, and the charged particle beam passes through the deflection via hole.

[0152] It can be understood that the above embodiments of the present application have illustrated the structures of the charged particle source 110, the via hole array 120, and the deflector 130, etc., and will not be elaborated here.

[0153] In the embodiment of the present application, the deflection electrode 132 is electrically connected to the metal interconnection layer 131, so that the external active drive circuit can supply power to the deflection electrode 132 through the metal interconnection layer 131, so that a deflection electric field can be formed in the deflection via hole Q enclosed by at least two deflection electrodes 132, so as to control the deflection direction of the charged particle beam N passing through the deflection via hole Q in the XY plane and can perform astigmatism correction on the charged particle beam N passing through the deflection via hole Q.

[0154] That is to say, in the embodiment of the present application, there is no need to use the metal trace 1313 in the metal interconnection layer 131 as the deflection electrode, which reduces the limitation of the metal interconnection layer 131 on the height of the deflection electrode 132 in the third direction Z (the direction from the charged particle source 110 to the via hole array 120). In this way, the height of the deflection electrode 132 in the third direction Z can be increased as needed, that is, the depth of the deflection via hole Q can be increased as needed, improving the control ability of the deflection electrode 132 on the charged particle beam N, such as the deflection ability of the deflection electrode 132 to control the charged particle beam N in the XY plane and the astigmatism correction ability of the deflection electrode 132 on the charged particle beam N. And, adopting the above method does not require increasing the driving voltage, reducing the power consumption and heat generation of the deflector 130, reducing the risk that the deflector 130 cannot work properly due to excessive temperature, and improving the reliability of the deflector 130.

[0155] Figure 9 It is a step flow chart of a preparation method of a charged particle beam device provided in some other embodiments of the present application. Figure 10 It is a step flow chart of a preparation method of a charged particle beam device provided in some other embodiments of the present application. Figure 11 It is a schematic structural diagram of a first substrate and an interlayer dielectric layer provided in some embodiments of the present application. Figure 12Schematic diagram of the first substrate and the metal interconnect layer provided by some embodiments of the present application. Figure 13 Schematic diagram of the first substrate and the metal interconnect layer provided by other embodiments of the present application.

[0156] In some examples, as Figure 9 shown, forming the deflector (i.e., step S3) includes:

[0157] Step S31a, forming the metal interconnect layer and a plurality of deflection electrodes respectively.

[0158] Step S32a, hybrid bonding the plurality of deflection electrodes and the metal interconnect layer.

[0159] It can be understood that forming the metal interconnect layer 131 and the plurality of deflection electrodes 132 respectively can reduce the mutual influence between the metal interconnect layer 131 and the plurality of deflection electrodes 132 during the preparation process. Hybrid bonding the plurality of deflection electrodes 132 and the metal interconnect layer 131 can improve the reliability and convenience of the electrical connection between the two.

[0160] In some examples, as Figure 10 shown, forming the metal interconnect layer (i.e., step S31a) includes:

[0161] Step S311a, providing a first substrate.

[0162] Step S312a, forming a metal interconnect layer on one side of the first substrate.

[0163] Exemplarily, as Figure 11 shown, an interlayer dielectric layer 1312 can be formed on one side of the first substrate 133. In some examples, any one of the thin film deposition processes such as chemical vapor deposition (full English name: chemical vapor deposition, English abbreviation: CVD), physical vapor deposition (full English name: physical vapor deposition, English abbreviation: PVD), and atomic layer deposition (full English name: atomic layer deposition, English abbreviation: ALD) can be used to form the interlayer dielectric layer 1312.

[0164] After forming the interlayer dielectric layer 1312, as Figure 12 shown, a plurality of electrically connected metal traces 1313 and a plurality of electronic devices 1311 can be formed in the interlayer dielectric layer 1312. Exemplarily, a second bonding metal 1314 and a third bonding metal 1315 electrically connected to the plurality of metal traces 1313 can also be formed. It can be understood that the metal interconnect layer 131 is located on one side of the first substrate 133. That is, the first substrate 133 and the metal interconnect layer 131 are stacked.

[0165] Understandably, the first substrate 133 can support the metal interconnect layer 131, reducing the risk of damage to the metal interconnect layer 131.

[0166] Step S313a: Open a second through-hole in the metal interconnect layer. The second through-hole penetrates the metal interconnect layer along the thickness direction of the metal interconnect layer. The second through-hole communicates with the deflected through-hole.

[0167] Exemplarily, as Figure 13 shown, a dry etching process or a wet etching process can be used to open a second through-hole M2 in the interlayer dielectric layer 1312. The second through-hole M2 penetrates the interlayer dielectric layer 1312 along the thickness direction of the interlayer dielectric layer 1312, and avoids the metal traces 1313 and the electronic devices 1311. The number of the second through-holes M2 is the same as the number of the deflected through-holes Q, and the setting positions correspond to each other, so that the multiple second through-holes M2 can communicate with the multiple deflected through-holes Q in a one-to-one correspondence.

[0168] Exemplarily, after the second through-hole M2 is opened, the sidewall of the second through-hole M2 can be cleaned to reduce the influence of the impurities remaining on the sidewall of the second through-hole M2 on the charged particle beam N.

[0169] Understandably, opening the second through-hole M2 in the interlayer dielectric layer 1312 of the metal interconnect layer 131 can prevent the metal interconnect layer 131 from blocking the charged particle beam N.

[0170] After forming the metal interconnect layer, the method for preparing the charged particle beam device further includes:

[0171] Open a through-window in the first substrate. The through-window penetrates the first substrate along the thickness direction of the first substrate, and the through-window communicates with the second through-hole. The closed figure surrounded by the positive projection of the edge of the second through-hole on the first substrate is located within the closed figure surrounded by the edge of the through-window.

[0172] Exemplarily, as Figure 13 shown, a dry etching process or a wet etching process can be used to open a through-window P in the first substrate 133. In some examples, the second through-hole M2 can be opened in the interlayer dielectric layer 1312 first, and then the through-window P can be opened in the first substrate 133. In other examples, the through-window P can be opened in the first substrate 133 first, and then the second through-hole M2 can be opened in the interlayer dielectric layer 1312. In still other examples, the second through-hole M2 can also be opened in the interlayer dielectric layer 1312 and the through-window P can be opened in the first substrate 133 simultaneously. Understandably, in the embodiments of the present application, "simultaneously" means in the same process step, not limited to the same moment.

[0173] In some examples, after forming the transmission window P on the first substrate 133, the sidewalls of the transmission window P and the interlayer dielectric layer 1312 exposed through the transmission window P can be cleaned to reduce the influence of impurities on the charged particle beam N.

[0174] It can be understood that the closed figure enclosed by the positive projection of the edge of the second through-hole M2 on the first substrate 133 is located within the closed figure enclosed by the edge of the transmission window P, that is, the opening area of the transmission window P is larger than the opening area of the second through-hole M2, which can reduce the number of charged particles hitting the sidewalls of the transmission window P when the charged particle beam N passes through the transmission window P, improve the charging effect, and improve the performance of the charged particle beam device 100.

[0175] Figure 14 It is a step flow chart of a method for manufacturing a charged particle beam device provided in some other embodiments of the present application. Figure 15 It is a schematic structural diagram of a third substrate, an etch stop layer, and an electrode layer provided in some embodiments of the present application. Figure 16 It is a schematic structural diagram of a third substrate, an etch stop layer, and a deflection electrode provided in some embodiments of the present application.

[0176] In some examples, as Figure 14 shown, forming a plurality of deflection electrodes (i.e., step S31a) includes:

[0177] Step S311b, providing a third substrate.

[0178] Exemplarily, the material of the third substrate 137 includes at least one of single-crystalline silicon, polycrystalline silicon, single-crystalline germanium, III-V compound semiconductor materials, II-VI compound semiconductor materials, or other semiconductor materials known in the art. The materials of the first substrate 133, the second substrate 134, and the third substrate 137 may be the same or different. The third substrate 137 may be a single-layer structure, or the third substrate 137 may also be a multi-layer composite structure.

[0179] Step S312b, forming an electrode layer on one side of the third substrate.

[0180] In some examples, any one of thin film deposition processes such as chemical vapor deposition (full English name: chemical vapor deposition, English abbreviation: CVD), physical vapor deposition (full English name: physical vapor deposition, English abbreviation: PVD), and atomic layer deposition (full English name: atomic layer deposition, English abbreviation: ALD) can be used to form the electrode layer 136 on one side of the third substrate 137 (see Figure 15)。For example, the material of the electrode layer 136 includes silicon with a doping concentration greater than or equal to 10E 19 / cm 3 .

[0181] Understandably, the second substrate 134 can support and protect the electrode layer 136, reducing the risk of damage to the electrode layer 136.

[0182] For example, after forming the electrode layer 136, a first bonding metal 138 can be formed on the side of the electrode layer 136 away from the third substrate 137, and the first bonding metal 138 is electrically connected to the electrode layer 136.

[0183] Step S313b, etching the electrode layer to form a plurality of deflection electrodes arranged at intervals.

[0184] For example, before forming the electrode layer 136, an etch stop layer 135 can be formed on one side of the third substrate 137, and the electrode layer 136 is located on the side of the etch stop layer 135 away from the third substrate 137.

[0185] The material of the etch stop layer 135 can be an oxide (abbreviation in English: OX), or the etch stop layer 135 can also be other materials. In some examples, the thickness of the etch stop layer 135 is less than or equal to 5 μm. For example, the thickness of the etch stop layer 135 can be 2 μm, 3 μm, or 4 μm, etc. The embodiments of the present application do not further limit the value of the thickness of the etch stop layer 135.

[0186] For example, a dry etching or wet etching process can be used to etch the electrode layer 136 with the etch stop layer 135 as a stop layer (English: stop layer), as Figure 16 shown, to form a plurality of deflection electrodes 132 arranged at intervals.

[0187] Figure 17 It is a flowchart of the steps of the preparation method of the charged particle beam device provided by some other embodiments of the present application. Figure 18 It is a schematic diagram of the positional relationship of the third substrate, the etch stop layer, the deflection electrode, the metal interconnection layer, and the first substrate provided by some embodiments of the present application.

[0188] In some examples, as Figure 17 shown, hybrid bonding of a plurality of deflection electrodes and a metal interconnection layer (i.e., step S32a) includes:

[0189] Step S32a1, hybrid bonding the side of the plurality of deflection electrodes away from the third substrate to the metal interconnection layer.

[0190] As Figure 18As shown, the first bonding metal 138 can be mixed and bonded with the second bonding metal 1314, so that the side of the plurality of deflection electrodes 132 away from the third substrate 137 can be mixed and bonded with the metal interconnection layer 131.

[0191] Step S32a2, removing the third substrate.

[0192] In some examples, the third substrate 137 can be removed by a dry etching process or a wet etching process to prevent the third substrate 137 from blocking the movement of the charged particle beam N. When removing the third substrate 137, the etch stop layer 135 can be removed by a dry etching process or a wet etching process to prevent the etch stop layer 135 from blocking the movement of the charged particle beam N. It can be understood that since the thickness of the etch stop layer 135 is relatively thin (less than or equal to 5 μm), the convenience of removing the etch stop layer 135 is improved.

[0193] Exemplarily, after removing the etch stop layer 135 and the third substrate 137, the side of the deflection electrode 132 away from the metal interconnection layer 131 can be cleaned to reduce the influence of impurities on the deflection electrode 132.

[0194] Figure 19 It is a step flow chart of a preparation method of a charged particle beam device provided by some other embodiments of the present application. Figure 20 It is a schematic structural diagram of a second substrate and an electrode layer provided by some embodiments of the present application. Figure 21 It is a schematic structural diagram of a deflection electrode, a second substrate and a metal interconnection layer provided by some embodiments of the present application.

[0195] In some other examples, as Figure 19 shown, forming a deflector (i.e., step S3), including:

[0196] Step S31b, providing a second initial substrate.

[0197] Step S32b, doping the second initial substrate on one side of the second initial substrate to form a stacked electrode layer and a second substrate.

[0198] Exemplarily, the one side of the second initial substrate can be heavily doped by a high-energy particle implantation method to form the electrode layer 136. It can be understood that as Figure 20 shown, the remaining part of the second initial substrate is the second substrate 134, and the second substrate 134 and the electrode layer 136 are stacked.

[0199] Exemplarily, the doping concentration of the electrode layer 136 can be greater than or equal to 10E19 / cm 3, the resistivity of the electrode layer 136 is less than or equal to 0.001 Ω·cm. The resistivity of the second substrate 134 is approximately 1 Ω·cm to 100 Ω·cm. The embodiments of the present application do not further limit the resistivity values of the electrode layer 136 and the second substrate 134.

[0200] Step S33b, etching the electrode layer to form a plurality of deflection electrodes arranged at intervals.

[0201] Exemplarily, the electrode layer 136 can be etched by dry etching or wet etching to form a plurality of deflection electrodes 132 arranged at intervals.

[0202] Step S34b, forming a metal interconnection layer on the side of the second substrate away from the plurality of deflection electrodes.

[0203] Exemplarily, an interlayer dielectric layer 1312 can be formed on the side of the second substrate 134 away from the deflection electrodes 132, and a plurality of metal traces 1313 and a plurality of electronic devices 1311 are formed in the interlayer dielectric layer 1312 by FEOL and BEOL to form a metal interconnection layer 131 on the side of the second substrate 134 away from the plurality of deflection electrodes 132.

[0204] With such a setting, the second substrate 134 can be located between the plurality of deflection electrodes 132 and the metal interconnection layer 131, enabling the second substrate 134 to support the metal interconnection layer 131 and reducing the risk of damage to the metal interconnection layer 131.

[0205] In some examples, after forming the metal interconnection layer 131 on the side of the second substrate 134 away from the electrode layer 136, the electrode layer 135 can also be etched to form a plurality of deflection electrodes 132 arranged at intervals.

[0206] Step S35b, opening a second through hole in the metal interconnection layer and a third through hole in the second substrate. The second through hole penetrates the metal interconnection layer along the thickness direction of the metal interconnection layer, and the third through hole penetrates the second substrate along the thickness direction of the second substrate. The third through hole communicates with the second through hole and the deflection through hole.

[0207] It can be understood that, as Figure 21 shown, setting the third through hole M3 to communicate with the second through hole M2 and the deflection through hole Q enables the charged particle beam N to pass through the deflection through hole Q, the third through hole M3, and the second through hole M2, avoiding the second substrate 134 from blocking the charged particle beam N.

[0208] Step S36b, electrically connecting the metal interconnection layer to the plurality of deflection electrodes.

[0209] Exemplarily, a through-silicon via T can be opened in the second substrate 134 (see Figure 7) The through-silicon via T penetrates through the second substrate 134 and is electrically connected to the plurality of deflection electrodes 132 and the metal interconnection layer 131. That is, the plurality of metal traces 1313 of the plurality of deflection electrodes 132 and the metal interconnection layer 131 can be electrically connected through the through-silicon via T, improving the convenience of the electrical connection between the two.

[0210] Exemplarily, the number of the through-silicon via T, the deflection electrodes 132, and the metal traces 1313 is the same, so that the through-silicon via T can electrically connect the deflection electrodes 132 and the metal traces 1313 in a one-to-one correspondence.

[0211] In summary, the embodiments of the present application have at least the following beneficial effects:

[0212] In the embodiments of the present application, the deflection electrodes 132 are electrically connected to the metal interconnection layer 131, so that an external active driving circuit can supply power to the deflection electrodes 132 through the metal interconnection layer 131. As a result, a deflection electric field can be formed within the deflection via Q surrounded by at least two deflection electrodes 132 to control the deflection direction of the charged particle beam N passing through the deflection via Q in the XY plane and can perform astigmatism correction on the charged particle beam N passing through the deflection via Q.

[0213] That is, in the embodiments of the present application, there is no need to use the metal traces 1313 in the metal interconnection layer 131 as the deflection electrodes, reducing the limitation of the height of the metal interconnection layer 131 on the deflection electrodes 132 along the third direction Z (the direction from the charged particle source 110 to the via array 120). In this way, the height of the deflection electrodes 132 along the third direction Z can be increased as needed, that is, the depth of the deflection via Q can be increased as needed, improving the control ability of the deflection electrodes 132 on the charged particle beam N. For example, the deflection ability of the deflection electrodes 132 to control the charged particle beam N in the XY plane and the astigmatism correction ability of the deflection electrodes 132 on the charged particle beam N. Moreover, by adopting the above method, there is no need to increase the driving voltage, reducing the power consumption and heat generation of the deflector 130, reducing the risk that the deflector 130 cannot work properly due to excessive temperature, and improving the reliability of the deflector 130.

[0214] The above is only the specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present application, thinking of changes or substitutions, should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A charged particle beam device, characterized in that, Comprising: A charged particle source configured to emit a charged particle beam; A through-hole array located on the emission side of the charged particle source; the through-hole array includes a plurality of first through-holes, and the charged particle beam passes through at least two of the first through-holes; and, A deflector located on the side of the through-hole array away from the charged particle source; the deflector includes a metal interconnection layer and a plurality of deflection electrodes arranged at intervals, and the plurality of deflection electrodes are respectively electrically connected to the metal interconnection layer; wherein, at least two deflection electrodes enclose a deflection through-hole, and the charged particle beam passes through the deflection through-hole.

2. The charged particle beam device according to claim 1, wherein The metal interconnection layer is provided with a second through-hole that penetrates the metal interconnection layer along the thickness direction of the metal interconnection layer; the second through-hole communicates with the deflection through-hole.

3. The charged particle beam device according to claim 2, characterized in that, The deflector further includes a first substrate located on the side of the metal interconnection layer away from the plurality of deflection electrodes; the first substrate is provided with a through window that penetrates the first substrate along the thickness direction of the first substrate, and the through window communicates with the second through-hole.

4. The charged particle beam device according to claim 3, characterized in that, The closed figure enclosed by the orthographic projection of the edge of the second through-hole on the first substrate is located within the closed figure enclosed by the edge of the through window.

5. The charged particle beam apparatus according to any one of claims 1 to 4, characterized in that, The plurality of deflection electrodes are hybrid bonded to the metal interconnection layer.

6. The charged particle beam device according to claim 2, wherein, The deflector further includes: A second substrate located between the plurality of deflection electrodes and the metal interconnection layer; the second substrate is provided with a third through-hole that penetrates the second substrate along the thickness direction of the second substrate; the third through-hole communicates the second through-hole and the deflection through-hole.

7. The charged particle beam device according to claim 6, characterized in that, The second substrate is provided with silicon through-holes that penetrate the second substrate and electrically connect the plurality of deflection electrodes and the metal interconnection layer.

8. The charged particle beam apparatus according to any one of claims 1 to 7, characterized in that, The plurality of deflection electrodes are closer to the through-hole array than the metal interconnection layer.

9. The charged particle beam device according to any one of claims 1 to 8, characterized in that, Along the direction from the charged particle source to the through-hole array, the height of the deflection electrode ranges from 100 μm to 500 μm.

10. The charged particle beam apparatus according to claim 9, wherein, The ratio of the height of the deflection electrode along the direction from the charged particle source to the through-hole array to the aperture of the deflection through-hole ranges from 10 to 20.

11. The charged particle beam device according to any one of claims 1 to 10, characterized in that, The shape of the deflection through-hole is a prism, a cylinder or a cuboid; the number of the deflection through-holes is plural, and the shapes of the plural deflection through-holes are the same.

12. The charged particle beam apparatus according to any one of claims 1 to 11, characterized in that, The material of the deflection electrode includes silicon with a doping concentration greater than or equal to 10E19 / cm 3 .

13. A method for preparing a charged particle beam device, characterized in that, Comprising: Providing a charged particle source configured to emit a charged particle beam; Providing a through-hole array located on the emission side of the charged particle source; the through-hole array includes a plurality of first through-holes, and the charged particle beam passes through at least two of the first through-holes; Forming a deflector located on the side of the through-hole array away from the charged particle source; the deflector includes a metal interconnection layer and a plurality of deflection electrodes arranged at intervals, and the plurality of deflection electrodes are respectively electrically connected to the metal interconnection layer; wherein, at least two deflection electrodes enclose a deflection through-hole, and the charged particle beam passes through the deflection through-hole.

14. The manufacturing method of the charged particle beam device according to claim 13, characterized in that, The forming the deflector includes: Form the metal interconnection layer and the plurality of deflection electrodes respectively; Hybrid bond the plurality of deflection electrodes and the metal interconnection layer.

15. The manufacturing method of the charged particle beam device according to claim 14, characterized in that, The forming of the metal interconnection layer includes: Provide a first substrate; Form a metal interconnection layer on one side of the first substrate; Open a second through hole in the metal interconnection layer; the second through hole penetrates the metal interconnection layer along the thickness direction of the metal interconnection layer; the second through hole communicates with the deflection through hole; After the forming of the metal interconnection layer, the manufacturing method of the charged particle beam device further includes: Open a through window on the first substrate; the through window penetrates the first substrate along the thickness direction of the first substrate, and the through window communicates with the second through hole; the closed figure enclosed by the positive projection of the edge of the second through hole on the first substrate is located within the closed figure enclosed by the edge of the through window.

16. The manufacturing method of the charged particle beam device according to claim 14 or 15, characterized in that, The forming of the plurality of deflection electrodes includes: Provide a third substrate; Form an electrode layer on one side of the third substrate; Etch the electrode layer to form a plurality of deflection electrodes arranged at intervals; The hybrid bonding of the plurality of deflection electrodes and the metal interconnection layer includes: Hybrid bond the side of the plurality of deflection electrodes away from the third substrate and the metal interconnection layer; Remove the third substrate.

17. The manufacturing method of the charged particle beam device according to claim 13, characterized in that, The forming of the deflector includes: Provide a second initial substrate; Dope the second initial substrate on one side to form a stacked electrode layer and a second substrate; Etch the electrode layer to form a plurality of deflection electrodes arranged at intervals; Form a metal interconnection layer on the side of the second substrate away from the plurality of deflection electrodes; Open a second through hole in the metal interconnection layer and a third through hole in the second substrate; the second through hole penetrates the metal interconnection layer along the thickness direction of the metal interconnection layer, and the third through hole penetrates the second substrate along the thickness direction of the second substrate; the third through hole communicates the second through hole and the deflection through hole; Electrically connect the metal interconnection layer and the plurality of deflection electrodes.

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