Tandem cells and photovoltaic modules

Abstract

This application relates to the field of photovoltaic cells, providing a tandem cell and a photovoltaic module. The tandem cell includes: a base cell, a first conductive connection layer, and a perovskite cell; the first conductive connection layer is located on the surface of the base cell; the first conductive connection layer includes a first conductive portion and a second conductive portion, the second conductive portion being embedded in the first conductive portion; the perovskite cell is located on the surface of the first conductive connection layer opposite to the base cell; wherein, the lateral conductivity of the material of the second conductive portion is less than the lateral conductivity of the material of the first conductive portion. This application embodiment can at least improve the photoelectric conversion efficiency of the tandem cell.

Description

Technical Field

[0001] This application relates to the field of photovoltaic cells, and in particular to a tandem cell and a photovoltaic module. Background Technology

[0002] To improve the efficiency of photovoltaic cells, one approach is to stack two photovoltaic cells with different band gaps to form a tandem photovoltaic cell, where each photovoltaic cell will convert a different part of the solar spectrum of the incident light.

[0003] Perovskite solar cells, with their outstanding advantages such as wide bandgap, high absorption coefficient, and high short-wavelength spectral response, have become a promising candidate for the front-side cells of tandem photovoltaic (PV) cells. Tandem PV cells, consisting of a wide-bandgap perovskite absorber layer and a narrow-bandgap crystalline silicon (SHJ) solar cell, can achieve spectral distribution absorption, reduce energy loss caused by carrier relaxation, and improve the photoelectric conversion efficiency of the PV cell.

[0004] In related technologies, tandem solar cells typically use a perovskite cell as the top cell and a crystalline silicon cell as the bottom cell, with the perovskite cell and the crystalline silicon cell connected in series through a conductive intermediate layer. Summary of the Invention

[0005] This application provides a tandem battery and a photovoltaic module, which at least helps to optimize the longitudinal transport capability of charge carriers in the tandem battery and improve the performance of the tandem battery.

[0006] According to some embodiments of this application, one aspect of this application provides a stacked battery, including: a base battery; a first conductive connection layer located on the surface of the base battery; the first conductive connection layer including a first conductive portion and a second conductive portion, the second conductive portion being embedded in the first conductive portion; a perovskite battery located on the surface of the first conductive connection layer opposite to the base battery; wherein, the lateral conductivity of the material of the second conductive portion is less than the lateral conductivity of the material of the first conductive portion.

[0007] In some embodiments, in the first conductive connection layer, the ratio between the area of ​​the second conductive portion and the area of ​​the first conductive portion is 0.2 to 0.8.

[0008] In some embodiments, the stacked battery includes multiple layers of the first conductive connection layer disposed along a third direction, the third direction being the thickness direction of the base battery, and the orthographic projection of all the second conductive portions on the base battery constitutes an overlapping projection, the ratio between the area of ​​the overlapping projection and the area of ​​the first conductive connection layer being 0.3 to 0.5.

[0009] In some embodiments, the area of ​​the overlapping projection is 0.2 cm².2 ~800cm 2 The area of ​​the first conductive connection layer is 1 cm². 2 ~10 3 cm 2 .

[0010] In some embodiments, the ratio between the thickness of the second conductive portion and the thickness of the first conductive portion in the first conductive connection layer is 0.1 to 1.

[0011] In some embodiments, the second conductive portion penetrates the first conductive portion.

[0012] In some embodiments, the thickness of the second conductive portion is 1 nm to 30 nm.

[0013] In some embodiments, the lateral conductivity of the first conductive part is 10S / cm-1000S / cm, and the lateral conductivity of the second conductive part is 1S / cm-100S / cm.

[0014] In some embodiments, the longitudinal conductivity of the first conductive portion is greater than the longitudinal conductivity of the second conductive portion; the longitudinal conductivity of the first conductive portion is 1×10⁻⁶. 3 S / cm ~9×10 4 S / cm, the longitudinal conductivity of the second conductive part is 5×10 2 S / cm ~5×10 4 S / cm.

[0015] In some embodiments, the material of the first conductive portion includes at least one of indium zinc oxide, indium tin oxide, fluorine-doped selenium oxide, and aluminum-doped zinc oxide.

[0016] In some embodiments, the material of the second conductive portion includes at least one of indium zinc oxide, indium tungsten oxide, indium copper oxide, indium oxide, tin oxide, titanium oxide, aluminum oxide, N-type polycrystalline silicon, silicon nitride, silicon oxynitride, and silicon oxide.

[0017] In some embodiments, the stacked battery further includes: a second conductive connection layer, the second conductive connection layer being disposed on the side of the first conductive connection layer facing the bottom battery, and / or disposed on the side of the first conductive connection layer facing the perovskite battery; wherein the material of the second conductive connection layer is the same as the material of the first conductive portion.

[0018] In some embodiments, the stacked battery includes multiple layers of the first conductive connection layer disposed along a third direction, the third direction being the thickness direction of the bottom battery, and the second conductive connection layer is disposed between adjacent first conductive connection layers.

[0019] In some embodiments, the thickness of the second conductive connection layer is 1 nm to 30 nm.

[0020] In some embodiments, the stacked battery includes multiple layers of first conductive connection layers and multiple layers of second conductive connection layers disposed along a third direction, wherein the third direction is the thickness direction of the bottom battery, and the ratio between the total thickness of all first conductive connection layers and the total thickness of all second conductive connection layers is 0.5 to 0.8.

[0021] In some embodiments, the second conductive portion includes a plurality of second conductive blocks, which are spaced apart and embedded within the first conductive portion.

[0022] In some embodiments, the second conductive block has a surface shape including at least one of a circle, a triangle, a quadrilateral, or an ellipse.

[0023] In some embodiments, the second conductive portion is a ring-shaped structure; or, the second conductive portion includes a plurality of conductive strips spaced apart.

[0024] In some embodiments, the method of forming the second conductive portion includes at least one of laser printing, photolithography, mask evaporation, PVD sputtering, RPD sputtering, and wet chemical etching.

[0025] According to some embodiments of this application, another aspect of this application provides a photovoltaic module, including: a battery string, the battery string being composed of a plurality of stacked batteries connected together, the stacked batteries being stacked batteries as described above; solder ribbons, the solder ribbons connecting adjacent stacked batteries; an encapsulating film, the encapsulating film covering the surface of the stacked batteries; and a cover plate, the cover plate being located on the surface of the encapsulating film away from the stacked batteries.

[0026] The technical solution provided in this application has at least the following advantages: by setting a second conductive part with a lower lateral conductivity than the first conductive part in the first conductive part with the characteristic of fast carrier transport speed, the lateral transport of carriers in the first conductive part is reduced, which is more conducive to the longitudinal transport of carriers in the first conductive part, thereby improving the fill factor and photoelectric conversion efficiency of the tandem cell. Attached Figure Description

[0027] One or more embodiments are illustrated by way of example with corresponding pictures in the accompanying drawings. These illustrations do not constitute a limitation on the embodiments. Unless otherwise stated, the pictures in the accompanying drawings do not constitute a limitation on scale. In order to more clearly illustrate the technical solutions in the embodiments of this application or in the conventional technology, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 This is a cross-sectional structural diagram of a stacked battery provided in an embodiment of this application;

[0029] Figure 2 A cross-sectional detailed structural diagram of a stacked battery provided in an embodiment of this application;

[0030] Figure 3 A cross-sectional structural diagram of a first conductive connection layer and part of the bottom cell in a stacked battery provided in an embodiment of this application;

[0031] Figure 4 A top view schematic diagram of a first layout of the first conductive connection layer in a stacked battery provided in an embodiment of this application;

[0032] Figure 5 A top view schematic diagram of a second layout of the first conductive connection layer in a stacked battery provided in an embodiment of this application;

[0033] Figure 6 A top view schematic diagram of a third layout of the first conductive connection layer in a stacked battery provided in an embodiment of this application;

[0034] Figure 7 A top view schematic diagram of a fourth layout of the first conductive connection layer in a stacked battery provided in an embodiment of this application;

[0035] Figure 8 A top view schematic diagram of a fifth layout of the first conductive connection layer in a stacked battery provided in an embodiment of this application;

[0036] Figure 9 A cross-sectional structural diagram of an intermediate conductive layer and a portion of the bottom cell in a stacked battery, provided for another embodiment of this application;

[0037] Figure 10 This is a cross-sectional structural diagram of an intermediate conductive layer and a portion of the bottom cell in a stacked battery, provided as another embodiment of this application.

[0038] Explanation of reference numerals in the attached figures:

[0039] 100, Perovskite solar cell; 110, Perovskite layer; 120, Hole transport layer; 130, First passivation layer; 140, Electron transport layer; 150, Electron modification layer; 160, Transparent conductive layer; 170, Anti-reflection layer; 200, Bottom cell; 210, Silicon substrate; 220, Second passivation layer; 230, First doped layer; 250, Second doped layer; 260, Third passivation layer; 300, Intermediate conductive layer; 310, First conductive connection layer; 311, First conductive part; 312, Second conductive part; 3121, Overlapping projection; 3122, Second conductive block; 3123, Second conductive strip; 3124, Second conductive arc; 320, Second conductive connection layer; 410, First electrode; 420, Second electrode. Detailed Implementation

[0040] As the background technology shows, an intermediate conductive layer is provided between the perovskite cell (top cell) and the crystalline silicon cell (bottom cell) in a tandem solar cell. This intermediate conductive layer needs to possess characteristics such as high conductivity, high light transmittance, and high longitudinal carrier transport velocity. Therefore, improving the longitudinal carrier transport performance of the intermediate conductive layer is beneficial to improving the performance of the tandem solar cell. In related technologies, the intermediate conductive layer is usually made of TCO (Transparent Conductive Oxides). TCO materials have the characteristics of high conductivity and high carrier transport velocity. The efficient longitudinal carrier transport capability of TCO materials is beneficial to improving the performance of tandem solar cells. However, while TCO materials also have the ability to transport carriers longitudinally, the lateral transport of carriers is not conducive to obtaining a high fill factor (FF) in tandem solar cells.

[0041] This application provides a tandem battery. By providing a second conductive portion with a lower lateral conductivity than the first conductive portion in a first conductive portion that has a fast carrier transport speed, the lateral transport of carriers in the first conductive portion is reduced, thereby facilitating the longitudinal transport of carriers in the first conductive portion and improving the fill factor and performance of the tandem battery.

[0042] In the description of the embodiments of this application, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly defined. Similarly, "multiple sets" refers to two or more sets (including two sets), and "multiple pieces" refers to two or more pieces (including two pieces).

[0043] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0044] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent three cases: A exists, A and B exist simultaneously, and B exists. In addition, the character " / " in this document generally indicates that the related objects before and after it have an "or" relationship.

[0045] In the description of the embodiments of this application, the technical terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application. For example, if the device or element in the illustration is inverted, then the element described as "below," "under," "below," or "bottom" of other elements or features will be oriented "above" or "top" of said other elements or features. Therefore, the term "below" may cover both above and below orientation depending on the context in which the term is used, which will be obvious to those skilled in the art. Materials may be oriented in other ways (e.g., rotated 90 degrees, inverted, flipped), and the spatial relative descriptive terms used herein may be interpreted accordingly.

[0046] In the description of the embodiments of this application, unless otherwise expressly specified and limited, technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in the embodiments of this application can be understood according to the specific circumstances.

[0047] In the accompanying drawings corresponding to the embodiments of this application, the thickness and area of ​​the layers are enlarged for better understanding and ease of description. Furthermore, when describing a component as "generally" formed on another component, it means that the component is not formed on the entire surface (or front surface) of the other component, nor is it formed on a portion of the edge of the entire surface.

[0048] In the description of the embodiments of this application, when a component "includes" another component, other components are not excluded unless otherwise stated, and other components may be further included. The formation or provision of a second component above or on a first component, or on the surface of a first component, or on one side of a first component, may include embodiments where the first and second components are in direct contact, and may also include embodiments where an additional component may be present between the first and second components, thereby preventing direct contact between the first and second components. For simplicity and clarity, various components may be drawn at different scales. In the drawings, some layers / components may be omitted for simplicity. Unless otherwise specified, the formation or provision of a second component on the surface of a first component refers to direct contact between the first and second components. The term "component" may refer to a layer, film, region, portion, structure, etc.

[0049] The terminology used in the description of the various embodiments herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used in the description of the various embodiments and the appended claims, the term "component" is also intended to include the plural form unless the context clearly indicates otherwise. Components include layers, films, regions, or plates, etc.

[0050] The embodiments of this application will now be described in detail with reference to the accompanying drawings. However, those skilled in the art will understand that many technical details have been provided in the embodiments of this application to facilitate a better understanding of the application. However, the technical solutions claimed in this application can be implemented even without these technical details and various variations and modifications based on the following embodiments.

[0051] Figures 1 to 3 This is a schematic diagram of the structure of the stacked battery provided in an embodiment of this application.

[0052] refer to Figures 1 to 3The tandem solar cell includes a bottom cell 200, an intermediate conductive layer 300, and a top cell. The intermediate conductive layer 300 is sandwiched between the bottom cell 200 and the top cell, and electrically connects the top cell and the bottom cell 200. The intermediate conductive layer 300 includes a first conductive connection layer 310, and the top cell is a perovskite solar cell 100. The first conductive connection layer 310 is located on the surface of the bottom cell 200; the first conductive connection layer 310 includes a first conductive portion 311 and a second conductive portion 312, the second conductive portion 312 being embedded in the first conductive portion 311; the perovskite solar cell 100 is located on the surface of the first conductive connection layer 310 away from the bottom cell 200; wherein the lateral conductivity of the material of the second conductive portion 312 is less than the lateral conductivity of the material of the first conductive portion 311.

[0053] It is important to understand that conductive materials can exhibit directional differences in electron mobility due to the shape of their internal atomic arrangement (such as layered or chain-like arrangement) or the different bond lengths and bond angles between atoms in the longitudinal and transverse directions. This results in a difference between the transverse and longitudinal conductivity within the conductive material.

[0054] In this embodiment, a second conductive portion 312 with a lower lateral conductivity than the first conductive portion 311 is embedded in the first conductive portion 311. This reduces the lateral transport efficiency of the first conductive portion 311 for charge carriers and increases the longitudinal transport efficiency of the first conductive portion 311 for charge carriers. Consequently, the first conductive connection layer 310 increases the transport efficiency of charge carriers between the bottom cell 200 and the perovskite cell 100, thereby improving the fill factor and performance of the stacked cell.

[0055] It should be noted that, Figure 1 A cross-sectional structural schematic diagram of a stacked battery according to an embodiment of this application is shown. Figure 2 A detailed cross-sectional structural diagram of a stacked battery according to an embodiment of this application is shown; Figure 3 This diagram shows a cross-sectional view of a first conductive connection layer 310 and a portion of a bottom cell 200 in a stacked battery according to an embodiment of this application.

[0056] It should also be noted that the stacked battery in this embodiment is a two-end stacked structure. In the two-end stacked battery, one of the positive and negative electrodes of the perovskite cell 100 is electrically connected to the other of the positive and negative electrodes of the bottom cell 200 through an intermediate conductive layer 300 (first conductive connection layer 310), thereby realizing a series circuit between the perovskite cell 100 and the bottom cell 200. The intermediate conductive layer 300 and the perovskite cell 100 can be connected by directly depositing the perovskite cell 100 on the bottom cell 200 without additional circuit design. The two-end stacked battery has the advantages of simple structure and low production cost.

[0057] The base cell 200 in this embodiment is a crystalline silicon cell, which includes one of PERC (Passivated Emitter and Rear Cell), TOPCon (Tunnel Oxide Passivated Contact), and HJT (Heterojunction with Intrinsic Thin-layer) cells.

[0058] The embodiments of this application will be described in more detail below with reference to the accompanying drawings.

[0059] Reference Figure 1 As shown, the stacked solar cell has intersecting and perpendicular first direction X, second direction Y, and third direction Z, where the third direction Z is the thickness direction of the stacked solar cell. The stacked solar cell includes a base cell 200, an intermediate conductive layer 300, and a perovskite cell 100 stacked sequentially along the third direction Z. The intermediate conductive layer 300 includes a first conductive connection layer 310. The lateral transport direction of the intermediate conductive layer 300 or the first conductive connection layer 310 for charge carriers is the first direction X, and the longitudinal transport direction of the intermediate conductive layer 300 or the first conductive connection layer 310 for charge carriers is the third direction Z.

[0060] Reference Figure 2 and Figure 3 As shown, Figure 2 and Figure 3 An embodiment is shown where the intermediate conductive layer 300 comprises only one conductive connection layer. The first conductive connection layer 310 has a layered structure and is sandwiched between the perovskite solar cell 100 and the bottom solar cell 200. The first conductive connection layer 310 includes a first conductive portion 311 and a second conductive portion 312 embedded in the first conductive portion 311. The two opposing surfaces of the first conductive portion 311 in the third direction Z are in contact with the perovskite solar cell 100 and the bottom solar cell 200, respectively. Both the first conductive portion 311 and the second conductive portion 312 are made of conductive material, and the first conductive connection layer 310 realizes the electrical connection between the bottom solar cell 200 and the perovskite solar cell 100.

[0061] In some embodiments, the material of the first conductive portion 311 includes at least one of indium zinc oxide, indium tin oxide, fluorine-doped selenium oxide, and aluminum-doped zinc oxide. The material of the first conductive portion 311 is a transparent and conductive material to avoid affecting the absorption of sunlight by the bottom battery 200.

[0062] In some embodiments, the material of the second conductive part 312 includes at least one of indium zinc oxide, indium tungsten oxide, indium copper oxide, indium oxide, tin oxide, titanium oxide, aluminum oxide, N-type polycrystalline silicon, silicon nitride, silicon oxynitride, and silicon oxide.

[0063] In the first conductive connection layer 310, the lateral conductivity of the first conductive portion 311 is greater than that of the second conductive portion 312, and the longitudinal conductivity of the first conductive portion 311 is greater than that of the second conductive portion 312. The reuse of the first conductive portion 311 and the second conductive portion 312 in the first conductive connection layer 310, due to the difference in their lateral conductivity, will cause the interface between them to be reconstructed based on percolation theory, thereby changing the migration direction of charge carriers in the first conductive portion 311. This reduces the density of the lateral conductive pathways between the interface of the first conductive portion 311 and the second conductive portion 312, and forms a denser longitudinal conductive channel in the third direction Z, thereby enhancing the longitudinal conductivity of the first conductive portion 311 and thus improving the fill factor and photoelectric conversion efficiency of the tandem solar cell.

[0064] In some embodiments, the lateral conductivity of the first conductive portion 311 is 10 S / cm to 1000 S / cm, and the longitudinal conductivity of the first conductive portion 311 is 1×10⁻⁶ S / cm. 3 S / cm ~ 9×10 4 S / cm. Optionally, the lateral conductivity of the first conductive part 311 is 100 S / cm to 900 S / cm, and the lateral conductivity of the first conductive part 311 can be 200 S / cm, 400 S / cm, 600 S / cm, or 800 S / cm. Optionally, the lateral conductivity of the second conductive part 312 is 5 × 10⁻⁶ S / cm. 3 S / cm ~ 8×10 4 The transverse conductivity of the second conductive part 312 can be 1×10⁻⁶ S / cm. 4 S / cm, 4×10 4 S / cm, 6×10 4 S / cm or 7×10 4 S / cm.

[0065] In some embodiments, the longitudinal conductivity of the second conductive portion 312 is 1 S / cm-100 S / cm, and the longitudinal conductivity of the second conductive portion 312 is 5 × 10⁻⁶. 2 S / cm-5×10 4 S / cm. Optionally, the longitudinal conductivity of the second conductive part 312 is 10 S / cm-90 S / cm, and the longitudinal conductivity of the second conductive part 312 can be 20 S / cm, 40 S / cm, 60 S / cm or 80 S / cm. Optionally, the longitudinal conductivity of the second conductive part 312 is 1×10 S / cm. 3 S / cm-4×10 4 The longitudinal conductivity of the second conductive part 312 can be 5 × 10⁻⁶ S / cm. 3 S / cm, 8×10 3 S / cm, 1×104 S / cm or 2×10 4 S / cm.

[0066] It should be noted that in some embodiments, such as Figure 2 , Figure 3 As shown, the second conductive portion 312 completely penetrates the first conductive portion 311 in the third direction Z; in other embodiments, the second conductive portion 312 is embedded in one of the opposite side surfaces of the first conductive portion 311 in the third direction Z. The embedding structure of the second conductive portion 312 in the first conductive connection layer 310 can be flexibly set according to the performance requirements or manufacturing process requirements of the tandem battery, and is not specifically limited here.

[0067] In some embodiments, the ratio between the thickness of the second conductive portion 312 and the thickness of the first conductive portion 311 in the third direction Z is 0.1 to 1. Optionally, the ratio between the thickness of the second conductive portion 312 and the thickness of the first conductive portion 311 is 0.2 to 0.8, and the ratio can be 0.4, 0.6, 0.7, or 0.8. Ensuring that the second conductive portion 312 has a certain thickness within the first conductive portion 311 enhances its role in changing the circuit distribution position and carrier migration direction in the first conductive connection layer 310, thereby increasing the longitudinal conductivity of the first conductive portion 311 and improving the fill factor and photoelectric conversion efficiency of the tandem solar cell.

[0068] In some embodiments, the thickness of the first conductive portion 311 in the third direction Z is 5 nm to 100 nm. Optionally, the thickness of the first conductive portion 311 is 10 nm to 40 nm, and the thickness of the first conductive portion 311 can be 10 nm, 20 nm, 30 nm or 40 nm.

[0069] In some embodiments, the thickness of the second conductive portion 312 in the third direction Z is 1 nm-30 nm. Optionally, the thickness of the second conductive portion 312 is 5 nm-20 nm, and the thickness of the second conductive portion 312 can be 5 nm, 10 nm, 15 nm or 20 nm.

[0070] It should be noted that the thickness of the first conductive portion 311 is the same as the thickness of the first conductive connection layer 310. In other words, the thickness of the first conductive connection layer 310 is equal to the thickness of the first conductive portion 311.

[0071] Reference Figures 4-7 As shown, the second conductive part 312 can be a single integral structure or it can be formed by several separate structures.

[0072] like Figure 4 , Figure 5As shown, the second conductive portion 312 includes a plurality of second conductive blocks 3122, which are arranged in an array in the first conductive connection layer 310. In the third direction Z, the shape of the orthographic projection of the second conductive block 3122 onto the bottom battery 200 includes at least one of the following: circle, triangle, quadrilateral or ellipse.

[0073] like Figure 6 As shown, the second conductive portion 312 includes a plurality of second conductive strips 3123 extending along a first direction X, and the plurality of second conductive strips 3123 are arranged at intervals along a second direction Y. In some embodiments, the second conductive strips 3123 penetrate the first conductive portion 311 in the first direction X. In other embodiments, the second conductive strips 3123 partially penetrate the first conductive portion 311 in the first direction X, which is not specifically limited here.

[0074] like Figure 7 As shown, the second conductive part 312 can be an integral structure. In the third direction Z, the shape of the orthogonal projection of the second conductive part 312 onto the bottom battery 200 is a ring structure.

[0075] like Figure 8 As shown, the second conductive portion 312 includes a plurality of second conductive arcs 3124. In the third direction Z, the orthographic projection of a single second conductive arc 3124 onto the bottom battery 200 is an arc-shaped structure, and the orthographic projections of all the second conductive arcs 3124 onto the bottom battery 200 are constructed into a discontinuously connected ring structure. The aforementioned ring structure can be one of a circular ring structure, a near-circular ring structure, or a square ring structure, and is not specifically limited here.

[0076] The second conductive part 312 is arranged in a uniform and regular manner in the first conductive connection layer 310, so that the longitudinal circuit in the first conductive part 311 in the first conductive connection layer 310 is evenly distributed, and the longitudinal conductivity of the first conductive part 311 at each position can be improved. This avoids the longitudinal circuit in the first conductive part 311 being too concentrated or too scattered in some places, which would cause the longitudinal conductivity of the first conductive part 311 to fail to reach the optimal value. This ensures the longitudinal conductivity of the first conductive part 311 and the first conductive connection layer 310, and improves the fill factor and photoelectric conversion efficiency of the tandem battery.

[0077] in, Figure 4 This diagram shows a top view of a first layout of the first conductive connection layer 310 in a stacked battery according to an embodiment of this application. Figure 5 This diagram shows a top view of a second layout of the first conductive connection layer 310 in a stacked battery according to an embodiment of this application. Figure 6 This diagram shows a top view of a third layout of the first conductive connection layer 310 in a stacked battery according to an embodiment of this application. Figure 7This diagram shows a top view of a fourth layout of the first conductive connection layer 310 in a stacked battery according to an embodiment of this application.

[0078] In some embodiments, the ratio between the area of ​​the second conductive portion 312 and the area of ​​the first conductive portion 311 in the first conductive connection layer 310 is 0.2 to 0.8. Optionally, the ratio between the area of ​​the second conductive portion 312 and the area of ​​the first conductive portion 311 in the first conductive connection layer 310 is 0.3 to 0.7, and the ratio can be 0.3, 0.4, 0.5, 0.6, or 0.7. When the area of ​​the second conductive portion 312 in the first conductive connection layer 310 is less than or equal to the area of ​​the first conductive portion 311, the longitudinal conductivity of the first conductive portion 311 and the overall longitudinal conductivity of the first conductive connection layer 310 are improved, thus increasing the carrier transport efficiency of the intermediate conductive layer 300, thereby improving the fill factor and photoelectric conversion efficiency of the tandem solar cell, and avoiding a decrease in the overall conductivity of the first conductive connection layer 310 due to an excessively large area of ​​the second conductive portion 312.

[0079] It should be noted that the area of ​​the first conductive part 311 and the area of ​​the second conductive part 312 are the projected areas of the two parts along the third direction Z on the bottom battery 200.

[0080] In some embodiments, the area of ​​the first conductive portion 311 in the first conductive connection layer 310 is 1 cm². 2 ~1000cm 2 Optionally, the area of ​​the first conductive portion 311 in the first conductive connection layer 310 is 1 cm². 2 -500cm 2 The area of ​​the first conductive portion 311 in the first conductive connection layer 310 can be 1 cm². 2 10cm 2 100cm 2 Or 500cm 2 .

[0081] In some embodiments, the area of ​​the second conductive portion 312 in the first conductive connection layer 310 is 0.2 cm². 2 -800cm 2 Optionally, the area of ​​the second conductive portion 312 in the first conductive connection layer 310 is 0.5 cm². 2 -100cm 2 The area of ​​the second conductive portion 312 in the first conductive connection layer 310 can be 0.5 cm². 2 5cm 2 10cm 2 Or 100cm 2 .

[0082] Continue to refer to Figure 2 As shown, in some embodiments, the perovskite solar cell 100 includes a hole transport layer 120, a perovskite layer 110, a first passivation layer 130, an electron transport layer 140, an electron modification layer 150, a transparent conductive layer 160, and an antireflection layer 170, which are stacked sequentially along the third direction Z.

[0083] The perovskite layer 110 exhibits a photoelectric effect, enabling the conversion of light energy into electrical energy. In the later stages of receiving incident light, the internal electric field of the perovskite layer 110 can induce electrons and holes to migrate directionally to the electron transport layer 140 and the hole transport layer 120, respectively.

[0084] The perovskite layer 110 includes a perovskite structural material, the chemical formula of which can be ABX3, where A can be a monovalent cation, including but not limited to cesium ions (Cs). + ), rubidium ions (Rb + ), methylamine ion (CH3NH 3+ ,MA) and formamidine ions (CH(NH2)) 2+ B can be at least one of FA; B can be a divalent cation, and can include, but is not limited to, lead ions (Pb). 2 + ), copper ions (Cu) 2+ ), zinc ions (Zn) 2+ Gallium ions (Ga) 2+ ), tin ions (Sn) 2+ ) and calcium ions (Ca 2+ X can be at least one of the following: X can be a monovalent anion, and may include, but is not limited to, iodide ions (I2). - ), bromide ions (Br) - ), chloride ions (Cl) - ), fluoride ions (F) - ), thiocyanate ion (SCN) - ), tetrafluoroborate ion (BF) 4- ) and hexafluorophosphate ions (PF6) 6- At least one of the following: A, B, and X. By changing the ratio of elements at the A, B, and X sites, the band gap of the perovskite layer 110 can be adjusted from 1.5 eV to 2.3 eV to adapt to the spectral requirements of different bottom cells 200.

[0085] In some embodiments, the thickness of the perovskite layer 110 on the third-direction Z is 100 nm to 5000 nm. Optionally, the thickness of the perovskite layer 110 can be 100 nm, 500 nm, 1000 nm, 1500 nm, 2000 nm, 2500 nm, 3000 nm, 3500 nm, 4000 nm, 4500 nm, or 5000 nm.

[0086] A hole transport layer 120 is disposed on the side of the perovskite layer 110 facing the bottom cell 200, and the side of the hole transport layer 120 facing away from the perovskite layer 110 is in contact with the intermediate conductive layer 300. The hole transport layer 120 can transport holes, block the reverse flow of electrons, and reduce the charge recombination rate. The hole transport layer 120 can be made of a p-type material, which can be at least one selected from p-type monocrystalline silicon, p-type polycrystalline silicon, p-type amorphous silicon, and single-molecule self-assembled materials.

[0087] In some embodiments, the thickness of the hole transport layer 120 in the third direction Z is 0.5nm-200nm. Optionally, the thickness of the hole transport layer 120 can be 0.5nm, 1nm, 5nm, 10nm, 20nm, 30nm, 50nm, 100nm, 150nm, or 200nm.

[0088] The first passivation layer 130 is disposed on the side of the perovskite layer 110 facing away from the bottom cell 200 and is in contact with the perovskite layer 110. The first passivation layer 130 serves to block the migration of ions from the electron transport layer into the perovskite layer 110 and to repair surface defects of the perovskite layer 110. The material of the first passivation layer 130 includes at least one selected from phenylethylamine iodide (PEAI), ethylenediamine iodide (EDAI), lithium fluoride (LiF), and sodium fluoride (NaF).

[0089] In some embodiments, the thickness of the first passivation layer 130 on the third-direction Z is 5-15 nm. Optionally, the thickness of the first passivation layer 130 can be 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm or 14 nm.

[0090] An electron transport layer 140 is disposed on the side of the first passivation layer 130 opposite to the perovskite layer 110 and is in contact with the first passivation layer 130. The electron transport layer 140 is used to extract charge carriers from the perovskite layer 110 and transport the charge carriers to the transparent conductive layer 160, thereby realizing the transport of current in the tandem battery. The electron transport layer 140 can be an n-type material, which can be selected from n-type monocrystalline silicon, n-type polycrystalline silicon, n-type amorphous silicon, zinc oxide (ZnO), tin oxide (SnO2), or fullerene (C). 60 At least one of the following.

[0091] In some embodiments, the thickness of the electron transport layer 140 on the third-party Z direction is optionally 20~50nm, and the thickness of the electron transport layer 140 can be 22nm, 24nm, 28nm, 30nm, 32nm, 34nm, 40nm, 42nm, 48nm or 50nm.

[0092] An electron modification layer 150 is disposed on the side of the electron transport layer 140 opposite to the perovskite layer 110 and is in contact with the perovskite layer 110. The electron modification layer 150 is used to reduce surface defects of the electron transport layer 140 and improve the stability of the perovskite solar cell 100 and the tandem solar cell. The material of the electron modification layer 150 includes at least one of titanium dioxide (TiO2), tin oxide (SnO2), and zinc oxide (ZnO).

[0093] In some embodiments, the thickness of the electron transport layer 140 in the third direction Z is 5 nm to 15 nm. Optionally, the thickness of the electron transport layer 140 can be 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm or 14 nm.

[0094] A transparent conductive layer 160 is disposed on the side of the electron-modifying layer 150 facing away from the perovskite layer 110 and is in contact with the electron-modifying layer 150. The transparent conductive layer 160 has good conductivity and light transmittance, used to collect and conduct backcurrents to external circuits, and allows more light to be transmitted to the perovskite layer 110 and the bottom cell 200. The material of the transparent conductive layer 160 includes at least one of fluorine-doped tin oxide (FTO), indium-doped tin oxide (ITO), or indium zinc oxide (IZO).

[0095] In some embodiments, the thickness of the transparent conductive layer 160 on the third-direction Z is 200 nm to 500 nm. Optionally, the thickness of the transparent conductive layer 160 can be 220 nm, 240 nm, 260 nm, 280 nm, 300 nm, 350 nm, 400 nm, 420 nm, or 480 nm.

[0096] An antireflection layer 170 is disposed on the side of the transparent conductive layer 160 facing away from the perovskite layer and is in contact with the transparent conductive layer 160. The antireflection layer 170 reduces the reflection of incident light, thereby reducing incident light reflection loss and improving the light utilization efficiency of the tandem solar cell. The materials of the antireflection layer 170 include silicon dioxide (SiO2) and silicon nitride (SiN). x At least one of magnesium fluoride (MgF2) or magnesium fluoride (MgF2).

[0097] In some embodiments, the thickness of the antireflection layer 170 on the third-direction Z is 80 nm to 120 nm. Optionally, the thickness of the antireflection layer 170 can be 85 nm, 90 nm, 95 nm, 100 nm, 105 nm, 110 nm, or 115 nm.

[0098] Continue to refer to Figure 2 As shown, in some embodiments, the bottom cell 200 includes a third passivation layer 260, a second doped layer 250, a silicon substrate 210, a second passivation layer 220, and a first doped layer 230 stacked sequentially along the third direction Z.

[0099] The silicon substrate 210 is a silicon wafer exhibiting photoelectric effect. The material of the silicon substrate 210 includes at least one of monocrystalline silicon, polycrystalline silicon, amorphous silicon, or microcrystalline silicon. The silicon substrate 210 can be an N-type semiconductor substrate. The N-type semiconductor substrate is doped with an N-type dopant element, which can be any one of group V elements such as phosphorus (P), bismuth (Bi), antimony (Sb), or arsenic (As). The surface of the silicon substrate 210 facing away from the perovskite solar cell 100 has a light-trapping textured surface structure to avoid light reflection and allow more light to enter the silicon substrate 210 from this surface, thus improving the light utilization efficiency of the bottom solar cell 200.

[0100] In some embodiments, the thickness of the silicon substrate 210 on the third-party Z direction is 160 μm to 180 μm. Optionally, the thickness of the silicon substrate 210 can be 165 μm, 168 μm, 170 μm, 173 μm, 175 μm or 178 μm.

[0101] The first doped layer 230 and the second doped layer 250 are respectively disposed on the side of the silicon substrate 210 facing the perovskite solar cell 100 and the side facing away from the perovskite solar cell 100. The material of the first doped layer 230 includes doped polycrystalline silicon or doped amorphous silicon. The first doped layer 230 is doped with an N-type dopant element, which can be any one of group V elements such as phosphorus (P), bismuth (Bi), antimony (Sb), or arsenic (As). The material of the second doped layer 250 includes doped polycrystalline silicon or doped amorphous silicon. The second doped layer 250 is doped with a P-type dopant element, which can be any one of group V elements such as phosphorus (P), bismuth (Bi), antimony (Sb), or arsenic (As).

[0102] In some embodiments, the thickness of the first doped layer 230 on the third-direction Z is 50 nm to 200 nm. Optionally, the thickness of the first doped layer 230 can be 60 nm, 80 nm, 100 nm, 120 nm, 140 nm, 160 nm or 180 nm.

[0103] In some embodiments, the thickness of the second doped layer 250 on the third-direction Z is 50 nm to 200 nm. Optionally, the thickness of the second doped layer 250 can be 60 nm, 80 nm, 100 nm, 120 nm, 140 nm, 160 nm or 180 nm.

[0104] The second passivation layer 220 is disposed on the side of the silicon substrate 210 facing the perovskite cell 100 and is in contact with the perovskite cell 100. The second passivation layer 220 suppresses carrier surface recombination through the dual effects of chemical passivation and field passivation, while simultaneously adjusting the band structure to improve charge collection efficiency. The material of the second passivation layer 220 includes alumina (Al₂O₃). x ), silicon nitride ( ) or silicon dioxide (SiO) x At least one of the following.

[0105] In some embodiments, the thickness of the second passivation layer 220 in the third direction Z is 1 nm to 5 nm. Optionally, the thickness of the second passivation layer 220 can be 1.5 nm, 2 nm, 2.5 nm, 3 nm, 3.5 nm, 4 nm, or 4.5 nm.

[0106] The third passivation layer 260 is disposed on the surface of the second doped layer 250 facing away from the silicon substrate 210. The third passivation layer 260 provides protection and insulation for the second doped layer 250. The material of the third passivation layer 260 includes silicon oxide (SiO2). x ), aluminum oxide (AlO) x ), silicon nitride ( ) or silicon oxynitride (SiN) x O y At least one of the following.

[0107] In some embodiments, the thickness of the third passivation layer 260 on the third-direction Z is 5 nm to 20 nm. Optionally, the thickness of the third passivation layer 260 can be 7 nm, 9 nm, 11 nm, 13 nm, 15 nm, or 17 nm.

[0108] It should be noted that, in some embodiments, the hole transport layer in the perovskite solar cell is disposed on the side of the perovskite layer facing the bottom cell, and the electron transport layer is disposed on the side of the perovskite layer facing away from the bottom cell; correspondingly, the first doped layer of the bottom cell, doped with an N-type dopant, is disposed on the side of the silicon substrate facing the perovskite solar cell, and the second doped layer of the bottom cell, doped with a P-type dopant, is disposed on the side of the silicon substrate facing away from the perovskite solar cell. In other embodiments, the hole transport layer in the perovskite solar cell is disposed on the side of the perovskite layer facing away from the bottom cell, and the electron transport layer is disposed on the side of the perovskite layer facing the bottom cell; correspondingly, the first doped layer of the bottom cell, doped with an N-type dopant, is disposed on the side of the silicon substrate facing away from the perovskite solar cell, and the second doped layer of the bottom cell, doped with a P-type dopant, is disposed on the side of the silicon substrate facing the perovskite solar cell. That is, the polarity of the hole transport layer in the perovskite solar cell is the same as the polarity of the second doped layer in the bottom cell, and the polarity of the electron transport layer in the perovskite solar cell is the same as the polarity of the first doped layer in the bottom cell. When a perovskite solar cell is connected in series with a bottom cell, the hole transport layer and the first doped layer with different polarities are connected in series through an intermediate connecting layer, or the electron transport layer and the second doped layer with different polarities are connected in series through an intermediate connecting layer.

[0109] Furthermore, the tandem battery also includes a first electrode 410 and a second electrode 420. The first electrode 410 penetrates the antireflection layer 170 in the third direction Z and then contacts and connects with the transparent conductive layer 160. The second electrode 420 penetrates the third passivation layer 260 in the third direction Z and then contacts and connects with the doped layer.

[0110] Reference Figure 9 As shown, Figure 9 This illustration shows a cross-sectional view of an intermediate conductive layer 300 and a portion of a bottom cell 200 in a stacked battery according to another embodiment of this application. The intermediate conductive layer 300 includes multiple layers of first conductive connection layers 310 stacked sequentially along the third direction Z. The multiple layers of first conductive connection layers 310 have a certain superposition effect, further improving the longitudinal conductivity of the first conductive portion 311 in each layer of first conductive connection layer 310 and the overall longitudinal conductivity of the intermediate conductive layer 300, thereby improving the carrier transport efficiency of the intermediate conductive layer 300 and thus improving the fill factor and photoelectric conversion efficiency of the stacked battery.

[0111] It should be noted that the thickness of different first conductive connection layers 310 can be the same or different, and the layout structure of the first conductive part 311 and the second conductive part 312 in different first conductive connection portions can be the same or different. Compared with multi-layer first conductive connection portions of the same size and layout, first conductive connection portion layers of different sizes or layouts increase the interface area between all first conductive parts 311 and all second conductive parts 312, thereby further improving the overall longitudinal conductivity of the intermediate conductive layer 300, improving the carrier transport efficiency of the intermediate conductive layer 300, and thus improving the fill factor and photoelectric conversion efficiency of the tandem solar cell.

[0112] In some embodiments, on the third-party direction Z, the orthographic projections of the second conductive portions 312 in all the first conductive connection layers 310 onto the bottom battery 200 constitute an overlapping projection 3121, and the ratio between the area of ​​the overlapping projection 3121 and the area of ​​the first conductive connection layer 310 is 0.2 to 0.8. Optionally, the ratio between the area of ​​the overlapping projection 3121 and the area of ​​the first conductive connection layer 310 is 0.3 to 0.6, and the ratio can be 0.3, 0.4, 0.45, 0.5, or 0.6.

[0113] In some embodiments, the area of ​​the overlapping projection 3121 is 0.2 cm². 2 ~800cm 2 Optionally, the area of ​​the overlapping projection 3121 is 1 cm². 2 ~700cm 2 The area of ​​the overlapping projection 3121 can be 10 cm². 2 100cm 2 300cm 2 Or 500cm 2 .

[0114] It is important to understand that, in the third direction Z, the overlapping projections 3121 formed by the orthographic projections of the second conductive portions 312 in all the first conductive connection layers 310 onto the bottom battery 200, that is, the orthographic projections of some of the second conductive portions 312 in different first conductive connection layers 310 onto the bottom battery 200 overlap. When calculating the area of ​​the overlapping projections 3121 of all the second conductive portions 312 onto the bottom battery 200, the orthographic projections of the overlapping second conductive portions 312 are only calculated once, rather than merging the total area of ​​the orthographic projections of each layer of second conductive portions 312.

[0115] Correspondingly, the orthogonal projection of the intermediate connecting layer plate on the bottom cell 200, excluding the overlapping projection 3121 of the second conductive part 312 on the bottom cell 200, is the projected area of ​​the portion of the first conductive parts 311 in the intermediate connecting layer that can form a continuous conductive path in the third direction Z. This ensures that the first conductive parts 311 with a certain area or a certain ratio of area in the intermediate conductive layer 300 are continuously arranged in the third direction Z (i.e., the longitudinal direction), so that this portion of the first conductive parts 311 has a continuously conducting longitudinal circuit in the third direction Z. The longitudinal circuit formed by the influence of the second conductive part 312 will be further concentrated in this portion of the first conductive parts 311, thereby improving the longitudinal conductivity of the first conductive parts 311 and the overall longitudinal conductivity of the intermediate conductive layer 300, improving the carrier transport efficiency of the intermediate conductive layer 300, and thus improving the fill factor and photoelectric conversion efficiency of the tandem cell.

[0116] Reference Figure 10 As shown, Figure 10 This illustration shows a cross-sectional view of an intermediate conductive layer 300 and a portion of a bottom cell 200 in a stacked battery according to another embodiment of this application. The intermediate conductive layer 300 further includes a second conductive connection layer 320, which is disposed on the side of the first conductive connection layer 310 facing the bottom cell 200 and / or on the side facing the perovskite cell 100. The material of the second conductive connection is the same as the material of the first conductive portion 311 in the first conductive connection layer 310. The number and position of the second conductive connection layer 320 can be flexibly configured according to actual needs. That is, the second conductive connection layer 320 can be disposed in an intermediate connection layer with only a single first conductive connection layer 310, or it can be disposed in an intermediate connection layer with multiple first conductive connection layers 310. The specific position and number of the second conductive connection layer 320 are not limited here.

[0117] The material of the second conductive connection layer 320 is the same as that of the first conductive portion 311 in the first conductive connection layer 310, ensuring that a portion of the first conductive portion 311 in the intermediate conductive layer 300 and the second conductive connection layer 320 form a continuous vertical circuit in the third direction Z. Furthermore, the second conductive connection layer 320 is also affected by the second conductive portion 312 in the adjacent first conductive connection layer 310, which has a lower lateral conductivity, thus increasing the vertical conductivity of the second conductive connection layer 320. The provision of the second conductive connection layer 320 improves the overall vertical conductivity of the intermediate conductive layer 300, improves the carrier transport efficiency of the intermediate conductive layer 300, and thereby improves the fill factor and photoelectric conversion efficiency of the tandem solar cell.

[0118] In some embodiments, on the third-party direction Z, the ratio between the thickness of all second conductive connection layers 320 and the thickness of all first conductive connection layers 310 is 0.2 to 1. Optionally, the ratio between the thickness of all second conductive connection layers 320 and the thickness of all first conductive connection layers 310 is 0.3 to 0.6, and the ratio can be 0.3, 0.4, 0.45, 0.5, or 0.6.

[0119] In some embodiments, the thickness of the second conductive connection layer 320 is 5nm-100nm. Optionally, the thickness of the second conductive connection layer 320 is 5nm-30nm, and the thickness of the second conductive connection layer 320 can be 5nm, 10nm, 20nm or 30nm.

[0120] Furthermore, the method for forming the second conductive portion 312 includes at least one of laser printing, photolithography, mask evaporation, PVD (Physical Vapor Deposition) sputtering, RPD (Reactive Plasma Deposition) sputtering, and wet chemical etching. When there are multiple first conductive interconnect layers 310 in the intermediate conductive layer 300, the methods for forming the second conductive portion 312 in different first conductive interconnect layers 310 can be the same or different, and are not specifically limited here.

[0121] Accordingly, another embodiment of this application also provides a photovoltaic module, which includes a cell string, solder ribbon, encapsulating film, and cover plate. The cell string is formed by connecting a plurality of back-contact photovoltaic cells, which are back-contact photovoltaic cells as described in the above embodiment; the solder ribbon connects adjacent back-contact photovoltaic cells; the encapsulating film covers the surface of the back-contact photovoltaic cells; and the cover plate is located on the surface of the encapsulating film away from the back-contact photovoltaic cells. For parts that are the same as or corresponding to the previous embodiment, please refer to the corresponding descriptions of the foregoing embodiments, which will not be elaborated upon below.

[0122] The encapsulating film can be made of organic encapsulating films such as ethylene-vinyl acetate copolymer (EVA) film, polyvinyl octene coelastomer (POE) film, or polyvinyl butyral (PVB) film.

[0123] The cover plate can be a glass cover plate, a plastic cover plate, or other cover plate with light transmission function. In some embodiments, the surface of the cover plate facing the adhesive film can be an uneven surface, thereby increasing the utilization rate of incident light.

[0124] Those skilled in the art will understand that the above embodiments are specific examples of implementing this application, and in practical applications, various changes in form and detail can be made without departing from the spirit and scope of this application. Any person skilled in the art can make various alterations and modifications without departing from the spirit and scope of this application; therefore, the scope of protection of this application should be determined by the scope defined in the claims.

Claims

1. A stacked battery, characterized in that, include: Bottom battery; A first conductive connection layer is located on the surface of the bottom battery; The first conductive connection layer includes a first conductive portion and a second conductive portion, wherein the second conductive portion is embedded in the first conductive portion; A perovskite solar cell, wherein the perovskite solar cell is located on the surface of the first conductive interconnect layer opposite to the bottom cell; The first conductive connection layer is disposed in multiple layers along a third direction, which is the thickness direction of the bottom battery. The orthogonal projection of all the second conductive parts on the bottom battery is constructed as an overlapping projection. The materials of the first conductive part and the second conductive part are conductive materials, and the lateral conductivity of the material of the second conductive part is less than that of the material of the first conductive part.

2. The stacked battery according to claim 1, characterized in that, In the first conductive connection layer, the ratio between the area of ​​the second conductive portion and the area of ​​the first conductive portion is 0.2 to 0.

8.

3. The stacked battery according to claim 1, characterized in that, The ratio between the area of ​​the overlapping projection and the area of ​​the first conductive connection layer is 0.3 to 0.

5.

4. The stacked battery according to claim 3, characterized in that, The area of ​​the overlapping projection is 0.2 cm². 2 ~800cm 2 The area of ​​the first conductive connection layer is 1 cm². 2 ~1000cm 2 .

5. The stacked battery according to claim 1, characterized in that, In the first conductive connection layer, the ratio between the thickness of the second conductive portion and the thickness of the first conductive portion is 0.1 to 1.

6. The stacked battery according to claim 5, characterized in that, The second conductive part penetrates the first conductive part.

7. The stacked battery according to claim 5, characterized in that, The thickness of the second conductive part is 1nm~30nm.

8. The stacked battery according to claim 1, characterized in that, The lateral conductivity of the first conductive part is 10S / cm-1000S / cm, and the lateral conductivity of the second conductive part is 1S / cm-100S / cm.

9. The stacked battery according to claim 1, characterized in that, The longitudinal conductivity of the first conductive part is greater than that of the second conductive part. The longitudinal conductivity of the first conductive part is 1×10 3 S / cm ~ 9×10 4 S / cm, the longitudinal conductivity of the second conductive part is 5×10 2 S / cm ~5×10 4 S / cm.

10. The stacked battery according to claim 1, characterized in that, The material of the first conductive part includes at least one of indium zinc oxide, indium tin oxide, fluorine-doped selenium oxide, and aluminum-doped zinc oxide.

11. The stacked battery according to claim 1, characterized in that, The material of the second conductive part includes at least one of indium zinc oxide, indium tungsten oxide, indium copper oxide, indium oxide, tin oxide, titanium oxide, and N-type polycrystalline silicon.

12. The stacked battery according to claim 1, characterized in that, Also includes: A second conductive connection layer is disposed on the side of the first conductive connection layer facing the bottom cell, and / or disposed on the side of the first conductive connection layer facing the perovskite cell; The material of the second conductive connection layer is the same as the material of the first conductive part.

13. The stacked battery according to claim 12, characterized in that, The stacked battery includes multiple layers of first conductive connection layers disposed along a third direction, the third direction being the thickness direction of the bottom battery, and second conductive connection layers disposed between adjacent first conductive connection layers.

14. The stacked battery according to claim 12, characterized in that, The thickness of the second conductive connection layer is 1nm~30nm.

15. The stacked battery according to claim 12, characterized in that, The stacked battery includes multiple layers of first conductive connection layers and multiple layers of second conductive connection layers disposed along a third direction, wherein the third direction is the thickness direction of the bottom battery, and the ratio between the total thickness of all first conductive connection layers and the total thickness of all second conductive connection layers is 0.5 to 0.

8.

16. The stacked battery according to claim 1, characterized in that, The second conductive part includes a plurality of second conductive blocks, which are spaced apart and embedded in the first conductive part.

17. The stacked battery according to claim 16, characterized in that, The surface shape of the second conductive block includes at least one of a circle, a triangle, a quadrilateral, or an ellipse.

18. The stacked battery according to claim 1, characterized in that, The second conductive part is a ring structure; or, the second conductive part includes a plurality of conductive strips spaced apart.

19. The stacked battery according to claim 1, characterized in that, The method for forming the second conductive part includes at least one of laser printing, photolithography, mask evaporation, PVD sputtering, RPD sputtering, and wet chemical etching.

20. A photovoltaic module, characterized in that, include: A battery string, wherein the battery string is composed of a plurality of stacked batteries connected together, wherein the stacked batteries are stacked batteries as described in any one of claims 1 to 19; Solder strips, which connect adjacent stacked cells; An encapsulating film covering the surface of the stacked battery; A cover plate located on the surface of the encapsulating film away from the stacked battery.

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