Etching method, etching device and perovskite assembly

Abstract

The embodiment of the invention discloses an etching method, an etching device and a perovskite assembly. The etching method is used for etching a top electrode of a battery to be etched. The etching method comprises the following steps: shaping a Gaussian beam into a square flat-topped beam; adjusting a preset focusing position of the square flat-topped light beam; controlling the to-be-etched battery and the square flat-topped light beam to reach relative positions, and controlling the to-be-etched battery and the square flat-topped light beam to move relatively along a first direction and / or a second direction; and etching the to-be-etched cell according to the preset focusing position, so that the depth of an etching groove formed by etching is greater than or equal to the thickness of the top electrode and less than the sum of the thickness of the top electrode and the thickness of the perovskite functional layer. According to the technical scheme provided by the embodiment of the invention, the Gaussian beam is converted into the square flat-topped beam, and the focal depth lower edge of the generated square flat-topped beam only acts on the top electrode on the surface of the film layer, so that the actual use power is reduced, the influence of laser on other functional layers in the perovskite component can be avoided, and the performance of the perovskite component is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and particularly to an etching method, an etching device, and a perovskite component. Background Art

[0002] Producing perovskite solar cell components requires using three parallel laser scribing processes to divide the whole cell into several series-connected sub-cells, and also requires a final laser edge cleaning process to remove the conductive deposition film at the cell edge. The first process P1: Before depositing the transport layer, use a laser to scribe the transparent conductive bottom electrode on the glass substrate to make it into independent regions; the second process P2: Laser scribe the perovskite light-absorbing layer on the transparent conductive bottom electrode so that the transparent conductive bottom electrode is exposed without damage; the third process P3: After completing the top electrode production, use a laser to scribe all the electrode layer, transport layer, and perovskite light-absorbing layer above the transparent conductive bottom electrode to form an independent structure between the sub-cells and connected in series through the upper and lower electrode layers.

[0003] In the prior art, there are two types of scribing schemes for the third process P3. One is for a rigid transparent glass substrate, Figure 1 which is a scribing schematic diagram of the third process of the transparent substrate structure in the related art. As Figure 1 shown, it includes a bottom electrode 1, a perovskite layer 2, and a top electrode 3 stacked in sequence. Select a green picosecond laser beam 4 with a wavelength of 400 - 800 nm to enter from the substrate surface, remove the perovskite layer 2 and the top electrode 3 above the bottom electrode 1, and keep the integrity of the bottom electrode 1 film layer. The other is for a non-transparent rigid material flexible substrate, Figure 2 which is a scribing schematic diagram of the third process of the non-transparent substrate structure in the related art. As Figure 2 shown, it includes a bottom electrode 1, a perovskite layer 2, and a top electrode 3 stacked in sequence. Select a green picosecond laser beam 5 with a wavelength of 300 - 600 nm to scribe by the way of entering from the top electrode 3 on the film layer surface. The laser beam types used in both laser etching methods are Gaussian beams, and in order to meet the isolation resistance requirements between the sub-cells and avoid bad contact between the sub-cells, both laser scribing methods are to remove all the functional layers above the bottom electrode 1. Figure 3 which is a passivation structure schematic diagram of the perovskite solar structure in the related art. As Figure 3As shown, the perovskite solar cell is formed by stacking. The entire cell structure includes a glass substrate 6, a bottom electrode 1, a perovskite layer 2, a top electrode 3, and a passivation layer 7. The passivation layer 7 can be an aluminum oxide passivation layer. Preparing a dense aluminum oxide can further isolate water and oxygen, and can act as a barrier layer to prevent the top electrode 3 from contacting the perovskite layer 2, avoid ion interdiffusion and degradation reactions, and improve the stability of the perovskite component. The aluminum oxide passivation layer is prepared after the laser process and before the component encapsulation.

[0004] However, when applying the existing process for the third process P3 scribing, there will be a situation where the molten material accumulates at the edge of the wire groove. Figure 4 It is a schematic diagram of the "crater" generated by applying the existing process for the third process. As Figure 4 shown, when applying the existing process for the third process P3 scribing, there will be a situation where the molten material accumulates at the edge of the wire groove to form a higher "crater", which affects the deposition of the subsequent aluminum oxide passivation layer. Specifically, it is manifested in the following aspects: (1) The thickness of the aluminum oxide passivation layer deposited by the existing structure is only a few nanometers to dozens of nanometers, which is used to repair defects and isolate moisture and oxygen, etc. However, the edge molten accumulation (crater) formed by applying the existing process for the third process P3 etching is in the micrometer-level thickness. Therefore, a thicker molten material accumulation requires the deposition of a thicker aluminum oxide material, increasing the process cost and deposition efficiency; (2) In the subsequent lamination process, the accumulation of the molten material may pierce the prepared aluminum oxide passivation layer, and there is a certain probability of contacting the bottom electrode 1 along the side wall of the wire groove formed by the third process P3 scribing, which will cause the top electrode 3 to directly contact the bottom electrode 1 and result in leakage current. Summary of the Invention

[0005] The present invention provides an etching method, an etching device, and a perovskite component to solve the problems of high process cost and low deposition efficiency, and avoid the direct contact between the top electrode and the bottom electrode resulting in leakage current.

[0006] According to an aspect of the present invention, an etching method is provided. The etching method is used to etch the top electrode of the battery to be etched; the etching method includes:

[0007] Shaping a Gaussian beam into a square flat-top beam;

[0008] Adjusting the preset focusing position of the square flat-top beam;

[0009] Controlling the battery to be etched and the square flat-top beam to a relative position, and controlling the battery to be etched and the square flat-top beam to move relative to each other along a first direction and / or a second direction, where the first direction is different from the second direction;

[0010] Etch the cell to be etched according to the preset focusing position, so that the depth of the etched groove is greater than or equal to the thickness of the top electrode and less than the sum of the thicknesses of the top electrode and the perovskite functional layer.

[0011] Optionally, controlling the relative position of the cell to be etched and the square flat-top beam includes:

[0012] Controlling the cell to be etched to the square flat-top beam; and / or, controlling the square flat-top beam to the cell to be etched.

[0013] Optionally, adjusting the preset focusing position of the square flat-top beam includes:

[0014] Determine the preset focal position by adjusting the focal length of the optical module; wherein, the preset focal position is the preset focusing position of the square flat-top beam.

[0015] Optionally, determining the preset focal position by adjusting the focal length of the optical module includes:

[0016] Determine the adjustment range of the distance between the optical module exit and the top electrode surface according to the maximum and minimum values of the distance between the optical module exit and the top electrode surface;

[0017] Divide the adjustment range into N equal preset intervals;

[0018] Obtain the number of iterations and the initial laser power, and determine the laser power during the N scribings according to the number of iterations and the initial laser power;

[0019] Determine the power density according to the laser power and compare the power density with the ablation threshold of the top electrode;

[0020] When the power density is equal to the ablation threshold, or the difference between the power density and the ablation threshold is less than or equal to the preset difference, determine the focal length of the optical module and the preset focal position.

[0021] Optionally, after determining the power density according to the laser power and comparing the power density with the ablation threshold of the top electrode, it further includes:

[0022] When the power density is less than the ablation threshold, determine two characteristic lines among the N scribings;

[0023] Redetermine the adjustment range of the distance between the optical module exit and the top electrode surface according to the distance between the two characteristic lines, and at the same time update the number of iterations by adding 1;

[0024] Calculate the iterated power density according to the updated number of iterations and the laser power, and compare the iterated power density with the ablation threshold.

[0025] Optionally, the optical module includes a laser generation unit, an optical path correction unit, and a shaping unit; the laser generation unit, the optical path correction unit, and the shaping unit are located on the same optical path, and the optical path correction unit is located between the laser generation unit and the shaping unit;

[0026] Shaping a Gaussian beam into a square flat-top beam includes:

[0027] Generating a Gaussian beam through a laser generation unit with a preset wavelength; alternatively, generating a Gaussian beam with a preset wavelength through the laser generation unit;

[0028] Receiving the Gaussian beam through the optical path correction unit, and correcting and filtering the Gaussian beam;

[0029] Receiving the Gaussian beam corrected and filtered by the optical path correction unit through the shaping unit, and shaping the Gaussian beam into a square flat-top beam.

[0030] Optionally, the optical module further includes a reflection unit; after receiving the Gaussian beam corrected and filtered by the optical path correction unit through the shaping unit and shaping the Gaussian beam into a square flat-top beam, it further includes:

[0031] Changing the propagation direction of the square flat-top beam through the reflection unit so that the square flat-top beam is perpendicular to the Gaussian beam.

[0032] Optionally, the optical module further includes a focusing unit; by adjusting the focal length of the optical module to determine a preset focal position, it includes:

[0033] Focusing the square flat-top beam into a preset spot size through the focusing unit;

[0034] Adjusting the focal length of the focusing unit to determine a preset focal position.

[0035] Optionally, controlling the battery to be etched to a relative position with respect to the square flat-top beam, and controlling the relative movement of the battery to be etched and the square flat-top beam in the first direction and / or the second direction, includes:

[0036] Controlling the battery to be etched to the position of the square flat-top beam through a vacuum adsorption platform;

[0037] The electromagnetic motion unit moves in the first direction, and controls the focusing unit to move in the second direction on one side of the battery to be etched according to a preset step distance, dividing the battery to be etched into sub-battery units.

[0038] Optionally,

[0039] The electromagnetic motion unit moves in the first direction, and controls the focusing unit to move in the second direction on one side of the battery to be etched according to a preset step distance, dividing the battery to be etched into sub-battery units, includes:

[0040] Obtain a positioning reference line through the visual positioning unit and transmit it to the control module;

[0041] The control module controls the electromagnetic motion unit to move in the first direction;

[0042] The control module also sets a compensation amount according to the positioning reference line to control the focusing unit to move in the second direction at a preset step distance on one side of the battery to be etched, and divides the battery to be etched into sub-battery units.

[0043] Optionally, before adjusting the preset focusing position of the square flat-top beam, it further includes:

[0044] Adjust the laser frequency and the processing line speed according to the current spot size to obtain a preset spot overlap rate.

[0045] Optionally, the perovskite functional layer includes a first transport layer, a first passivation and modification layer, a perovskite absorption layer, a second transport layer, and a second passivation and modification layer that are sequentially stacked; or,

[0046] The perovskite functional layer includes a first transport layer, a perovskite absorption layer, and a second transport layer that are stacked.

[0047] Optionally, the etched groove is the third groove of the perovskite component; the perovskite component is provided with a plurality of first grooves, a plurality of second grooves, and a plurality of third grooves in the first direction; the depth of the third groove is greater than or equal to the thickness of the top electrode and less than the sum of the thicknesses of the top electrode and the perovskite functional layer.

[0048] According to another aspect of the present invention, an etching device is provided, which executes the above etching method. The etching device includes:

[0049] An optical module for shaping a Gaussian beam into a square flat-top beam;

[0050] An adjustment module for adjusting the preset focusing position of the square flat-top beam;

[0051] A motion module for controlling the battery to be etched and the square flat-top beam to a relative position, and controlling the relative movement of the battery to be etched and the square flat-top beam in the first direction and / or the second direction, where the first direction is different from the second direction;

[0052] An etching module for etching the battery to be etched according to the preset focusing position, so that the depth of the etched groove is greater than or equal to the thickness of the top electrode and less than the sum of the thicknesses of the top electrode and the perovskite functional layer.

[0053] According to another aspect of the present invention, a perovskite component is provided. The perovskite component is formed by applying the above etching method; the perovskite component includes a plurality of battery units; the battery units include a bottom electrode layer, a perovskite functional layer, and a top electrode layer that are sequentially stacked;

[0054] The perovskite component is provided with a plurality of first grooves, a plurality of second grooves, and a plurality of third grooves along a first direction; the perovskite component is divided into a plurality of battery units connected in series in sequence through the plurality of first grooves, the plurality of second grooves, and the plurality of third grooves;

[0055] The first groove penetrates through the bottom electrode layer; the second groove penetrates through the perovskite functional layer; the third groove penetrates through the top electrode layer. In the technical solution of the embodiment of the present invention, an etching method is set. By converting a Gaussian beam into a square flat-top beam, and the lower edge of the focal depth of the generated square flat-top beam only acts on the top electrode on the surface of the film layer. Compared with the existing third process P3 etching process, it selectively removes a specified thickness of the film layer, reduces the actual use power, and can avoid the influence of the laser on other functional layers in the battery to be etched. Applying a square flat-top photolithography to scribe the top electrode while retaining all or part of the perovskite functional layer, there are almost no "crater" formed by melting on both sides of the formed wire groove, avoiding short circuit of the top electrodes on both sides of the wire groove. Retaining the perovskite functional layer as an insulating barrier layer between the top electrode and the bottom electrode to avoid short circuit of the upper and lower electrodes of the wire groove. In addition, applying a square flat-top light with uniform energy distribution and using a smaller processing power of the laser to remove a thinner film layer, the edge of the formed wire groove is smoother, and the melting height of the wire groove edge is reduced, which is beneficial to the subsequent preparation of water and oxygen barrier layers such as alumina. And applying a square flat-top light for etching, a neat morphology of the wire groove edge can be achieved under a process with a low spot overlap rate, which can improve the processing efficiency and the performance of the formed perovskite component.

[0056] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0058] Figure 1 is a schematic diagram of scribing in the third process of a transparent substrate structure in the related art;

[0059] Figure 2 is a schematic diagram of scribing in the third process of a non-transparent substrate structure in the related art;

[0060] Figure 3 is a schematic diagram of a passivation structure of a perovskite solar structure in the related art;

[0061] Figure 4 It is a schematic diagram of generating a "crater" in the third process using the existing process;

[0062] Figure 5 It is a flowchart of an etching method provided according to an embodiment of the present invention;

[0063] Figure 6 It is a schematic diagram of converting a Gaussian beam into a flat-top beam provided according to an embodiment of the present invention;

[0064] Figure 7 It is a schematic diagram of the focal position provided according to an embodiment of the present invention;

[0065] Figure 8 It is a flowchart of another etching method provided according to an embodiment of the present invention;

[0066] Figure 9 It is a schematic diagram of finding the optimal focus provided according to an embodiment of the present invention;

[0067] Figure 10 It is a flowchart of finding the optimal focus provided according to an embodiment of the present invention;

[0068] Figure 11 It is a schematic diagram of applying a diaphragm to filter and correct the light spot provided according to an embodiment of the present invention;

[0069] Figure 12 It is a flowchart of yet another etching method provided according to an embodiment of the present invention;

[0070] Figure 13 It is a schematic diagram of forming the P3 wire groove in the third process by etching with a flat-top light spot provided according to an embodiment of the present invention;

[0071] Figure 14 It is a schematic diagram of the structure of an etching device provided according to an embodiment of the present invention;

[0072] Figure 15 It is a schematic diagram of the structure of a perovskite component provided according to an embodiment of the present invention;

[0073] Figure 16 It is a SEM diagram of the thickness of the perovskite layer retained at the center of the P3 wire groove formed by etching with a flat-top light spot provided according to an embodiment of the present invention;

[0074] Figure 17 It is a schematic diagram of the comparison of the photoelectric conversion efficiency of the perovskite component corresponding to selectively removing the top electrode and the functional layer above the bottom electrode provided according to an embodiment of the present invention. Detailed implementation manners

[0075] To enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the scope of protection of the present invention.

[0076] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so that the embodiments of the present invention described here can be implemented in an order other than those illustrated or described here. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units need not be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0077] The following problems will occur when the laser beam in the prior art exits from the back of the substrate for the third process P3 scribing: (1) The requirements for the cleanliness of the back of the substrate and the surface of the bottom electrode are relatively high. When there is dirt on the back of the substrate and the surface of the bottom electrode, light-shielding points will be formed, resulting in the short circuit of the top electrode of the sub-cell and serious leakage current in the sub-cell; (2) The light passes through the bottom electrode - light-absorbing layer - top electrode in sequence. The green light beam is absorbed at the light-absorbing layer and the bottom electrode, and the stress generated by the evaporation of the light-absorbing layer at the interface removes the light-absorbing layer and the top electrode together in an explosive form, easily causing interface problems; (3) The etched part of the perovskite light-absorbing layer will damage the local crystal structure of the perovskite, introducing more crystal defects, thus leading to abnormal carrier density; (4) The scribing method based on the backlight explosion mechanism will cause different degrees of lateral delamination between functional layers, affecting the migration of carriers; (5) The backlight of the substrate has relatively high requirements for the light transmittance of the transparent substrate and the bottom electrode material. Otherwise, the laser energy will be lost, resulting in excessive energy consumption.

[0078] The laser beam in the prior art emits light from the surface of the film layer for the third process P3 scribing technology, which has the following problems: (1) The energy of the traditional light spot is normally distributed. When injecting laser energy from the surface of the film layer, the laser is successively absorbed by the top electrode - absorption layer - bottom electrode. However, the top electrode has a strong ability to absorb laser energy. In this way, the top electrode preferentially absorbs most of the energy, converting it into most of the heat and the potential energy of the melt. Other thin film layers absorb less energy and release the absorbed energy in the form of heat, ultimately forming the molten accumulation and reshaping layer at the edge of the etched wire groove. After lamination and encapsulation, a short circuit between the top electrode and the bottom electrode will occur, resulting in leakage current. (2) If we want to weaken the reshaping layer of the top electrode at the groove, we need to inject a laser with greater energy. However, since the laser used belongs to the Gaussian type, if we directly evaporate the top electrode at the edge, we need greater energy. In this case, the energy in the middle region of the Gaussian light is sufficient to damage the surface structure of the bottom electrode, which is not conducive to current transmission and the aging life of the battery.

[0079] In view of the above problems, the embodiments of the present invention provide the following technical solutions: Figure 5 is a flowchart of an etching method provided according to an embodiment of the present invention. This embodiment is applicable to the third scribing process in a perovskite component. This etching method can be executed by an etching device, and the etching device can be implemented in the form of hardware and / or software. This etching method is used to etch the top electrode of the battery to be etched. As Figure 5 shown, this etching method includes:

[0080] S110. Reshape the Gaussian beam into a square flat-top beam.

[0081] Specifically, use a square flat-top beam with uniform energy distribution for etching to avoid problems caused by the non-uniform energy distribution of the Gaussian beam. And adopt the etching method from the top electrode on the surface of the film layer to avoid the disadvantages of emitting light from the back of the substrate and increase the diversity of the third process P3 etching. Figure 6 is a schematic diagram of converting a Gaussian beam into a flat-top beam provided according to an embodiment of the present invention. As Figure 6 shown, a short-wavelength picosecond laser can be applied to match the beam shaping device to realize the conversion of the circular Gaussian beam 8 into a square flat-top beam 9. The optical module can include components such as a laser, a beam shaping mirror, and a focusing mirror. The flight optical path is composed of the components of the optical module to shape the Gaussian beam emitted by the laser into a square flat-top beam for etching the top electrode of the battery to be etched. The battery to be etched is a form in the process of forming a perovskite component.

[0082] S120. Adjust the preset focusing position of the square flat-top beam.

[0083] In an alternative embodiment of the present invention, S120, adjusting the preset focusing position of the square flat-top beam, includes: determining the preset focal position by adjusting the focal length of the optical module; wherein, the preset focal position is the preset focusing position of the square flat-top beam.

[0084] Specifically, the preset focal position is the laser focal point positioning with the maximum energy density determined in advance. Forming the corresponding sub-cells by etching the top electrode requires a high-quality shaped light spot, a flat-top beam with uniform energy density distribution, and precise positioning of the laser focal point, ensuring that the lower edge of the focal depth range with the maximum energy density of the short focal point falls on the surface of the film layer to be processed. Figure 7 It is a schematic diagram of the focal position provided according to an embodiment of the present invention, as Figure 7 shown, the focal point F of the focusing mirror 11, the focal depth range DOF, control the distance between the focusing mirror 11 and the top electrode 3, so that the lower edge of the focal depth range falls on the surface of the top electrode 3. Place the lower edge of the effective focal point range of the laser beam at the center of the film layer surface. Combining with the process, selective removal of the top electrode 3 on the film layer surface can be achieved by light output, and a perovskite light-absorbing layer with a larger thickness can be retained.

[0085] The method of adjusting the focal length may include the following steps: (1) Determine the melting threshold P0 of the top electrode through the laser power gradient and the effect of spot ablation; Exemplarily, increase the laser power in sequence at preset gradient intervals, and apply each laser power to etch the top electrode in sequence. According to the effect of spot burning, determine the laser power corresponding to the ablation of the top electrode, which is the melting threshold P0 of the top electrode. (2) Discretize the laser spot, that is, set the spot overlap number to be greater than 1; (3) Set the focal length to fn, and the initial focal length to f0; (4) Set the step distance L (L can take any real number), and the focal length becomes fn = f0 + nL; Exemplarily, when performing the first scribing, the focal length is f1 = f0 + 1. Record the spot diameter Dn and the pulse energy Wn, and calculate the spot area Sn according to the spot diameter Dn; The spot area Sn = 1 / 4 * π * Dn 2 , calculate the energy density Pn = Wn / Sn according to the pulse energy Wn and the spot area Sn; (5) Compare the energy density Pn with the melting threshold P0 of the top electrode. If the energy density Pn is equal to the melting threshold P0 of the top electrode, or the difference between the melting threshold P0 of the top electrode and the ratio of the energy density Pn to the melting threshold P0 of the top electrode is less than or equal to 2%, then determine the optimal focal position; If the energy density Pn is less than the melting threshold P0 of the top electrode, repeat step (4), set n = n + 1 and continue to loop and calculate until the energy density Pn is equal to the melting threshold P0 of the top electrode, stop the loop, and determine the optimal focal position. Exemplarily, when performing the first scribing, the focal length is f1 = f0 + 1, the spot diameter D1, the pulse energy W1, and calculate the spot area S1 = 1 / 4 * π * D1 2, the energy density P1 = W1 / S1. Compare the energy density P1 with the melting threshold P0 of the top electrode. If the energy density P1 is equal to the melting threshold P0 of the top electrode, or the difference between the melting threshold P0 of the top electrode and the ratio of the energy density P1 to the melting threshold P0 of the top electrode is less than or equal to 2%, the focal length is f1; if the energy density P1 is less than the melting threshold P0 of the top electrode, adjust the focal length to f2 = f0 + L, and repeat step (4) until the optimal focal position is found and the loop ends.

[0086] S130. Control the etched cell and the square flat-top beam to a relative position, and control the relative movement of the etched cell and the square flat-top beam along the first direction and / or the second direction, where the first direction is different from the second direction.

[0087] Specifically, the etched cell can be stably adsorbed by a vacuum electromagnetic motion platform, overcoming the disadvantage of unstable grasping by traditional cylinder mechanical claws, and can adsorb and grasp the etched cell to perform smooth scribing to the greatest extent. When the vacuum electromagnetic motion platform is powered on and given a signal, the vacuum electromagnetic motion platform controls the etched cell to move along the first direction. At this time, the focusing lens continuously moves along the second direction at a set step distance on one side of the etched cell, and a grating is obtained on the etched cell, thereby dividing the etched cell into sub-cells.

[0088] It should be noted that when the etched cell is a cuboid, the first direction can represent the direction parallel to the short side of the etched cell, and the second direction can represent the direction parallel to the long side of the etched cell; or the first direction can represent the direction parallel to the long side of the etched cell, and the second direction can represent the direction parallel to the short side of the etched cell, which is not specifically limited here. The relationship between the first direction and the second direction can be perpendicular.

[0089] In an alternative embodiment of the present invention, controlling the etched cell and the square flat-top beam to a relative position includes: controlling the etched cell to the square flat-top beam; and / or, controlling the square flat-top beam to the etched cell.

[0090] Specifically, before controlling the relative movement of the etched cell and the square flat-top beam, first control the etched cell to the square flat-top beam, or control the square flat-top beam to the etched cell.

[0091] S140. Etch the etched cell according to a preset focusing position, so that the depth of the etched groove formed is greater than or equal to the thickness of the top electrode and less than the sum of the thicknesses of the top electrode and the perovskite functional layer.

[0092] Specifically, the depth of the etched groove can be represented by H, the thickness of the top electrode can be represented by H1, and the thickness of the perovskite functional layer can be represented by H2. After determining the optimal focus position according to the optimal focus position determination method, the control module controls the optical module to work, and etches the perovskite component according to the determined position, so that the depth H of the etched groove satisfies being greater than or equal to the thickness H1 of the top electrode and less than the sum H1 + H2 of the thicknesses of the top electrode and the perovskite functional layer, that is, H1 ≤ H < H1 + H2. It realizes selective removal of the top electrode of the battery to be etched on the surface of the film layer, and basically retains the perovskite light-absorbing layer in the middle of the wire groove on the premise of retaining the absolute isolation between the sub-cells. Applying a smaller processing energy to achieve a better etching morphology, effectively improving the photoelectric conversion efficiency and aging stability of the perovskite component. The perovskite layer retained in the middle of the wire groove serves as a barrier layer between the top electrode and the bottom electrode, reducing the possibility of short circuit between the top electrode and the bottom electrode along the side wall of the etched groove.

[0093] The technical solution of the embodiment of the present invention sets an etching method. By converting a Gaussian beam into a square flat-top beam, and the lower edge of the focal depth of the generated square flat-top beam only acts on the top electrode on the surface of the film layer. Compared with the existing third process P3 etching process, it selectively removes a specified thickness of the film layer, reduces the actual use power, and can avoid the influence of the laser on other functional layers in the battery to be etched. Applying a square flat-top light to scribe the top electrode while retaining all or part of the perovskite absorption layer, there are almost no "crater" formed by melting on both sides of the formed wire groove, avoiding short circuit between the top electrodes on both sides of the wire groove. Retaining the perovskite functional layer as an insulating barrier layer between the top electrode and the bottom electrode to avoid short circuit between the upper and lower electrodes of the wire groove. In addition, applying a square flat-top light with uniform energy distribution and using a smaller laser processing power to remove a thinner film layer, the edge of the formed wire groove is smoother, and the melting height at the edge of the wire groove is reduced, which is beneficial to the subsequent preparation of water and oxygen barrier layers such as alumina. And applying a square flat-top light for etching can achieve a neat morphology of the wire groove edge under the process of low spot overlap rate, which can improve the processing efficiency and the performance of the formed perovskite component.

[0094] Figure 8 It is a flowchart of another etching method provided according to an embodiment of the present invention. This embodiment is a refined description of some technical features of the above embodiment. As Figure 8 shown, this etching method includes:

[0095] S210. Reshape the Gaussian beam into a square flat-top beam.

[0096] S211. Determine the adjustment range of the distance between the optical module outlet and the top electrode surface according to the maximum and minimum values of the distance between the optical module outlet and the top electrode surface.

[0097] Specifically, a focusing lens can be used in the optical module to focus and form a light spot. The distance between the exit of the focusing lens and the surface of the top electrode can be denoted by H. The maximum value of the distance between the exit of the focusing lens and the surface of the top electrode can be denoted by Hmax, and the minimum value can be denoted by Hmin. The distance H between the exit of the focusing lens and the surface of the top electrode needs to satisfy Hmin < H < Hmax. The adjustment range of the distance between the exit of the optical module and the surface of the top electrode can be denoted by H1, and the adjustment range of the distance between the exit of the optical module and the surface of the top electrode can be expressed as the difference between the maximum value and the minimum value of the distance between the exit of the optical module and the surface of the top electrode, that is, H1 = Hmax - Hmin.

[0098] S212. Mark the adjustment range N times at equal preset intervals.

[0099] Specifically, to shorten the time to determine the optimal solution, it is stipulated that the scribing order is from the minimum value Hmin to the maximum value Hmax. The adjustment range H1 is evenly discretized and marked N times on the battery to be etched. The preset interval can be denoted by d, and d = H1 / N.

[0100] S213. Obtain the number of iterations and the initial laser power, and determine the laser power for the N scribings according to the number of iterations and the initial laser power.

[0101] Specifically, optimize with the existing Gaussian beam as the initial value. When confirming that the initial number of spot overlaps is denoted by O 初 and the initial power is denoted by W0. The pulse energy distribution of the square light spot after beam shaping is more uniform than that of the Gaussian beam pulse energy distribution. For the same spot area and the same selected single pulse energy, the energy density in the central region of the square flat-top beam is smaller than that in the central region of the Gaussian beam. In view of this situation, the single pulse energy is increased to make the single pulse energy density value of the square beam close to that of the Gaussian beam pulse energy density, so as to determine the initial value of the square beam. Select the initial number of spot overlaps O 初 , and the initial laser power W1 and the initial power W0 of the existing stable process satisfy a certain relationship, that is, W1 = 1 / 2 * W0. Set the number of iterations as n, then the laser power Wn for the N scribings is Wn = (1 / 2) n *W0.

[0102] S214. Determine the power density according to the laser power, and compare the power density with the ablation threshold of the top electrode.

[0103] Specifically, the ablation threshold of the top electrode is denoted by P 消融 and the power density is denoted by ρn. The power density ρn = 4Wn / (π * R 2), where R represents the diameter of the light spot and Wn represents the laser power. Compare the calculated power density with the ablation threshold to determine whether the distance H between the exit of the focusing lens and the surface of the top electrode is the optimal distance. If the power density is equal to the ablation threshold, it is determined that the distance H between the exit of the focusing lens and the surface of the top electrode is the optimal distance; if the power density is not equal to the ablation threshold, continue to reduce the distance between the exit of the focusing lens and the surface of the top electrode to find the optimal distance between the exit of the focusing lens and the surface of the top electrode that enables complete etching of the top electrode without affecting the perovskite absorption layer.

[0104] S215. When the power density is equal to the ablation threshold, or the difference between the power density and the ablation threshold is less than or equal to a preset difference, determine the focal length of the optical module and the preset focal point position.

[0105] S216. When the power density is less than the ablation threshold, determine two characteristic lines among the N scribing lines.

[0106] Specifically, when the power density is less than the ablation threshold, select two wire grooves with obvious characteristics (regions where the defocusing effects at both ends are similar) in the scribed grooves to divide the number axis into three regions. Exemplarily, Figure 9 is a schematic diagram of finding the optimal focal point provided by an embodiment of the present invention. As Figure 9 shown, determine two characteristic lines among the N1 wire grooves of the third process P3, including characteristic line N2 and characteristic line N22. The two characteristic lines divide the initial region into three small regions: region A, region B, and region C.

[0107] S217. Re-determine the adjustment range of the distance between the exit of the optical module and the surface of the top electrode according to the distance between the two characteristic lines, and at the same time update the iteration count by adding 1.

[0108] Specifically, re-determine the adjustment range according to the distances between the exit of the focusing lens corresponding to the two characteristic lines and the surface of the top electrode. Exemplarily, the distance corresponding to characteristic line N2 is represented by H2, and the distance corresponding to characteristic line N22 is represented by H22. Then Hmin = H2, Hmax = H22, and W2 = 1 / 2 * W1.

[0109] In an optional embodiment of the present invention, the adjustment range of the distance between the exit of the optical module and the surface of the top electrode can also be re-determined according to the distance between the two characteristic lines, and at the same time the iteration count is updated by adding 2. Or, the adjustment range of the distance between the exit of the optical module and the surface of the top electrode can also be re-determined according to the distance between the two characteristic lines, and at the same time the iteration count is first updated by adding 2. If the power density is still less than the ablation threshold, determine two characteristic lines among the N scribing lines, re-determine the adjustment range of the distance between the exit of the optical module and the surface of the top electrode according to the distance between the two characteristic lines, and at the same time update the iteration count by adding 1. The specific value of the increase in the iteration count is not specifically limited here.

[0110] S218. Calculate the power density after iteration based on the updated iteration count and laser power, and compare the power density after iteration with the ablation threshold.

[0111] Specifically, perform iterative calculations according to the method in S217 until the power density is equal to the ablation threshold of the top electrode, and then stop the iteration. Exemplarily, Figure 10 is a flowchart for finding the optimal focus provided by an embodiment of the present invention. As Figure 10 shown, S11. The iteration count n = 1, and the initial power is W0; S12. The laser power Wn = (1 / 2) n *W0; S13. Set the scribing count N; S14. Find the characteristic lines Nn and Nnn; S15. Calculate the power density ρn = 4Wn / (π * R 2 ); S16. Determine whether the power density ρn is equal to the ablation threshold of the top electrode; if so, execute S17. Determine the optimal distance between the exit of the focusing lens and the surface of the top electrode and the optimal laser power; if not, execute S18. The iteration count is n = n + 1, and return to S12 for recalculation.

[0112] S219. Control the battery to be etched and the square flat-top beam to a relative position, and control the battery to be etched and the square flat-top beam to move relative to each other in the first direction and / or the second direction, where the first direction is different from the second direction.

[0113] S220. Etch the battery to be etched according to the preset focusing position, so that the depth of the etched groove is greater than or equal to the thickness of the top electrode and less than the sum of the thicknesses of the top electrode and the perovskite functional layer.

[0114] The optical module includes a laser generation unit, an optical path correction unit, and a shaping unit; the laser generation unit, the optical path correction unit, and the shaping unit are on the same optical path, and the optical path correction unit is located between the laser generation unit and the shaping unit.

[0115] Specifically, the laser generation unit includes, but is not limited to, a laser. The selected laser type is a short-wavelength picosecond ultraviolet laser with a pulse width less than 8 picoseconds, which can obtain a high peak power during etching and has a low thermal impact; the maximum power is 30w (1000KHz), and the frequency division is directly adjusted through a separator. The stable frequencies are 50KHz - 1000KHz, and different frequencies can generate different pulse numbers per unit time; the laser emitted by the selected short-wavelength picosecond ultraviolet laser has coherence, collimation, and stability that all meet the etching requirements. The optical path correction unit includes, but is not limited to, a combination of a beam expander and a diaphragm. Figure 11 is a schematic diagram of using a diaphragm to filter and correct the light spot provided by an embodiment of the present invention. As Figure 11As shown, in order to ensure the quality of the light spot and avoid the interference of stray light, the diaphragm 10 is used to filter and correct the stray light spot 12 with an angle into a circular light spot 13. The size of the diaphragm 10 is smaller than the size of the light spot, which can effectively intercept the concentrated light spot energy range. The energy of the surrounding stray light spots is weak and can be ignored. The shaping unit includes but is not limited to a beam shaping mirror.

[0116] Figure 12 is a flowchart of another etching method provided according to an embodiment of the present invention. As Figure 12 shown, the etching method includes:

[0117] S310. Generate a Gaussian beam through a laser generation unit with a preset wavelength; or generate a Gaussian beam with a preset wavelength through a laser generation unit.

[0118] In an optional embodiment of the present invention, before scribing, it further includes: adjusting the laser frequency and the processing line speed according to the current light spot size to obtain a preset light spot overlap rate. Specifically, adjust the frequency of the laser, the single pulse energy, and the speed of the platform to determine the light spot overlap number. The light spot overlap number is represented by 0, O = 2rf / v, where r is the light spot radius, f is the laser frequency, and v is the platform speed. By adjusting the light spot radius, the laser frequency, and the platform speed, an appropriate light spot overlap number can be obtained. Exemplarily, by adjusting the light spot radius, the laser frequency, and the platform speed, the light spot overlap number is made greater than 1.

[0119] S311. Receive the Gaussian beam through an optical path correction unit, and correct and filter the Gaussian beam.

[0120] Specifically, a combination of a beam expander and a diaphragm is used to correct and filter the Gaussian beam generated by the laser, change the diameter and divergence angle of the laser beam emitted from the laser, form a standard, homogenized light spot with a certain beam diameter, eliminate the interference of stray light, and prepare for beam shaping.

[0121] S312. Receive the Gaussian beam corrected and filtered by the optical path correction unit through a shaping unit, and shape the Gaussian beam into a square flat-top beam.

[0122] Specifically, the beam shaping mirror shapes the expanded Gaussian beam into a flat-top beam, and the energy of the shaped beam is concentrated and homogeneous. Figure 13 is a schematic diagram of etching to form the third process P3 wire groove using a flat-top light spot provided according to an embodiment of the present invention. As Figure 13 shown, it includes a bottom electrode 1, a perovskite layer 2, a top electrode 3, and a flat-top light spot 14. A specially customized beam shaping mirror shapes the Gaussian beam with a normal distribution into a flat-top light spot with a uniform energy distribution for etching the third process P3 wire groove.

[0123] S313. Change the propagation direction of the square flat-top beam through the reflection unit so that the square flat-top beam is perpendicular to the Gaussian beam.

[0124] Specifically, the optical module further includes a reflection unit, and the reflection unit includes but is not limited to a mirror. The function of the mirror is to change the propagation path of the optical path. Exemplarily, it is changed from the horizontal direction to the vertical direction and the beam is introduced into the focusing mirror.

[0125] S314. Focus the square flat-top beam into a preset spot size through the focusing unit.

[0126] Specifically, the optical module further includes a focusing unit, and the focusing unit includes but is not limited to a focusing mirror. The focusing mirror converges the beam into the smallest spot size. The selected focusing mirror has a shorter focal depth than that used in conventional processes, which is more conducive to accurately acting on the film layer to be etched during processing.

[0127] S315. Determine the preset focal position by adjusting the focal length of the focusing unit.

[0128] S316. Control the battery to be etched to the square flat-top beam through the vacuum adsorption platform.

[0129] Specifically, a vacuum adsorption platform can be used to control the motion state of the battery to be etched. The vacuum adsorption platform can stably adsorb the perovskite component, overcome the disadvantage of the instability of the traditional cylinder mechanical claw, and can adsorb the perovskite component to the greatest extent for smooth scribing.

[0130] S317. The electromagnetic motion unit moves along the first direction, and controls the focusing unit to move along the second direction at a preset step distance on one side of the battery to be etched, and divides the battery to be etched into sub-battery units.

[0131] In an alternative embodiment of the present invention, the electromagnetic motion unit moves along the first direction, and controls the focusing unit to move along the second direction at a preset step distance on one side of the battery to be etched, and divides the battery to be etched into sub-battery units, including: obtaining a positioning reference line through the vision positioning unit and transmitting it to the control module; the control module controls the electromagnetic motion unit to move along the first direction; the control module also sets a compensation amount according to the positioning reference line to control the focusing unit to move along the second direction at a preset step distance on one side of the battery to be etched, and divides the battery to be etched into sub-battery units.

[0132] Specifically, a signal is transmitted to the electromagnetic motion unit, and the electromagnetic motion unit moves along the first direction. The focusing mirror is controlled to move in the second direction at a preset step distance on one side of the battery to be etched, and the battery to be etched is divided into sub-battery units. The first direction and the second direction are in the same plane and perpendicular to each other. The vision positioning unit includes, but is not limited to, a camera vision positioning system. The camera vision positioning system moves coaxially with the focusing mirror, grabs the positioning reference line and feeds it back to the control module, and modifies the set parameters in the control module to perform the corresponding third process of P3 wire groove scribing operation.

[0133] In an alternative embodiment of the present invention, the perovskite functional layer includes a first transport layer, a first passivation and modification layer, a perovskite absorption layer, a second transport layer, and a second passivation and modification layer that are sequentially stacked; alternatively, the perovskite functional layer includes a first transport layer, a perovskite absorption layer, and a second transport layer that are stacked.

[0134] In an alternative embodiment of the present invention, the etched groove is the third groove of the perovskite component; the perovskite component is provided with a plurality of first grooves, a plurality of second grooves, and a plurality of third grooves along the first direction; the depth of the third groove is greater than or equal to the thickness of the top electrode and less than the sum of the thicknesses of the top electrode and the perovskite functional layer.

[0135] In an embodiment of the present invention, the depth of the third groove in the perovskite component is greater than or equal to the thickness of the top electrode and less than the sum of the thicknesses of the top electrode and the perovskite functional layer, avoiding short-circuiting of the top electrodes on both sides of the wire groove. The perovskite functional layer is retained as an insulating barrier layer between the top electrode and the bottom electrode, avoiding short-circuiting of the upper and lower electrodes of the wire groove.

[0136] Figure 14 is a schematic structural diagram of an etching device provided according to an embodiment of the present invention. As Figure 14 shown, the etching device includes: an optical module 30 for shaping the Gaussian beam into a square flat-top beam; an adjustment module 40 for adjusting the preset focusing position of the square flat-top beam; a motion module 50 for controlling the relative position of the battery to be etched and the square flat-top beam, and controlling the relative movement of the battery to be etched and the square flat-top beam along the first direction and / or the second direction, where the first direction and the second direction are different; an etching module 60 for etching the battery to be etched according to the preset focusing position, so that the depth of the etched groove is greater than or equal to the thickness of the top electrode and less than the sum of the thicknesses of the top electrode and the perovskite functional layer.

[0137] The etching device provided by the embodiment of the present invention is used to execute the etching method of the embodiment of the present invention, and has the same technical effects, which will not be elaborated here.

[0138] Figure 15 is a schematic structural diagram of a perovskite component provided according to an embodiment of the present invention. As Figure 15As shown, the perovskite component is formed by applying the etching method of the embodiment of the present invention; the perovskite component includes a plurality of battery units 20; the battery unit 20 includes a bottom electrode layer 201, a perovskite functional layer 202, and a top electrode layer 203 that are sequentially stacked; the perovskite component is provided with a plurality of first grooves 100, a plurality of second grooves 200, and a plurality of third grooves 300 along the first direction X; the perovskite component is divided into a plurality of battery units 20 that are sequentially connected in series by the plurality of first grooves 100, the plurality of second grooves 200, and the plurality of third grooves 300; the first groove 100 penetrates the bottom electrode layer 201; the second groove 200 penetrates the perovskite functional layer 202; the third groove 300 penetrates the top electrode layer 203. In the embodiment of the present invention, the perovskite component further includes a glass substrate 400. The first electrode layer 201 is located on one side of the glass substrate 400. The perovskite functional layer 202 includes a first transport layer, a first passivation modification layer, a perovskite absorption layer, a second transport layer, and a second passivation modification layer that are sequentially stacked, and the perovskite functional layer 202 may further include an ultraviolet protection layer. The perovskite functional layer 202 is the core area for absorbing sunlight and generating electron-hole pairs. The top electrode layer 203 is located on the side of the perovskite functional layer 202 away from the bottom electrode layer 201.

[0139] The perovskite component is divided into a plurality of battery units 20 that are sequentially connected in series by the plurality of first grooves 100, the plurality of second grooves 200, and the plurality of third grooves 300. The formed grooves provide channels for connecting the positive and negative electrodes of adjacent battery units 20. The first groove 100 penetrates the first electrode layer 201, and the first groove 100 is filled with the perovskite functional layer 202, which helps to optimize the electric field distribution and carrier transport path inside the battery unit 20. When sunlight irradiates the perovskite functional layer 202, the generated electron-hole pairs can be more efficiently separated and transported under the action of the bottom electrode layer 201 and the top electrode layer 203, thereby improving the photoelectric conversion efficiency of the solar cell component.

[0140] The third groove 300 penetrates the top electrode layer 203. When performing the third process P3 etching, the top electrode is selectively removed. Figure 16 It is a transmission electron microscopy schematic diagram of the thickness of the perovskite layer retained at the center of the third process P3 wire groove formed by applying a flat-top light spot etching according to the embodiment of the present invention. As Figure 16As shown, exemplarily, the thickness of the perovskite functional layer 202 itself is set to 550.00 nm. After the third process P3 is etched to form the third groove, three thickness values of the perovskite functional layer 202 are obtained, which are D1 = 548.83 nm, D2 = 562.35 nm, and D3 = 505.57 nm respectively. Limited by the coating process, the uniformity of the perovskite functional layer 202 of the large-area perovskite component is about 3%. The self-thickness is obtained by taking the average thickness of multiple positions. Therefore, there is a situation where the measured thickness is greater than the set self-thickness. By comparing the three thickness values with the self-thickness of the perovskite functional layer 202, it can be concluded that the remaining thickness of the perovskite functional layer 202 is greater than 95%.

[0141] Figure 17 is a schematic diagram of the comparison of the photoelectric conversion efficiency of the perovskite component corresponding to selectively removing the top electrode and the functional layer above the bottom electrode according to the embodiment of the present invention. As Figure 17 shown, the photoelectric conversion efficiency of the perovskite component corresponding to selectively removing the top electrode is greater than that of the perovskite component corresponding to selectively removing the functional layer above the bottom electrode. By selectively removing the second electrode layer of the perovskite component from the light output on the film surface, while maintaining the absolute isolation between the battery units, the perovskite functional layer in the middle of the third groove is basically retained, effectively improving the photoelectric conversion efficiency of the perovskite component. The perovskite functional layer in the middle of the third groove can act as a blocking layer to reduce the possibility of short-circuiting between the first electrode layer and the second electrode layer.

[0142] It should be understood that various forms of the processes shown above can be used, reordering, adding or deleting steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in a different order, as long as the desired results of the technical solution of the present invention can be achieved, which is not limited herein.

[0143] The above specific embodiments do not constitute a limitation to the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. An etching method, characterized in that, The etching method is used to etch the top electrode of the battery to be etched; the etching method includes: Shaping a Gaussian beam into a square flat-top beam; Adjusting a preset focusing position of the square flat-top beam; Controlling the battery to be etched and the square flat-top beam to a relative position, and controlling the battery to be etched and the square flat-top beam to move relatively along a first direction and / or a second direction, where the first direction is different from the second direction; Etching the battery to be etched according to the preset focusing position, so that the depth of the etched groove is greater than or equal to the thickness of the top electrode and less than the sum of the thicknesses of the top electrode and the perovskite functional layer; The adjusting the preset focusing position of the square flat-top beam includes: Determining a preset focal point position by adjusting the focal length of an optical module; wherein, the preset focal point position is the preset focusing position of the square flat-top beam; The determining a preset focal point position by adjusting the focal length of an optical module includes: Determining an adjustment range of the distance between the outlet of the optical module and the surface of the top electrode according to the maximum value and the minimum value of the distance between the outlet of the optical module and the surface of the top electrode; Scoring the adjustment range N times at equal preset intervals; Obtaining the number of iterations and the initial laser power, and determining the laser power during the N times of scoring according to the number of iterations and the initial laser power; Determining the power density according to the laser power, and comparing the power density with the ablation threshold of the top electrode; When the power density is equal to the ablation threshold, or the difference between the power density and the ablation threshold is less than or equal to a preset difference, determining the focal length of the optical module and the preset focal point position.

2. The etching method according to claim 1, wherein The controlling the battery to be etched and the square flat-top beam to a relative position includes: Controlling the battery to be etched to the position of the square flat-top beam; and / or, controlling the square flat-top beam to the battery to be etched.

3. The etching method according to claim 1, characterized in that After the determining the power density according to the laser power and comparing the power density with the ablation threshold of the top electrode, it further includes: When the power density is less than the ablation threshold, determining two characteristic lines among the N times of scoring; Redetermining the adjustment range of the distance between the outlet of the optical module and the surface of the top electrode according to the distance between the two characteristic lines, and at the same time incrementing the number of iterations by 1 for update; Calculating the iterated power density according to the updated number of iterations and the laser power, and comparing the iterated power density with the ablation threshold.

4. The etching method according to claim 1, characterized in that The optical module includes a laser generation unit, an optical path correction unit, and a shaping unit; the laser generation unit, the optical path correction unit, and the shaping unit are located on the same optical path, and the optical path correction unit is located between the laser generation unit and the shaping unit; Shaping a Gaussian beam into a square flat-top beam includes: Generating a Gaussian beam by the laser generation unit with a preset wavelength; or, generating a Gaussian beam with a preset wavelength by the laser generation unit; Receiving the Gaussian beam by the optical path correction unit, and correcting and filtering the Gaussian beam; Receive the Gaussian beam corrected and filtered by the optical path correction unit through the shaping unit, and shape the Gaussian beam into a square flat-top beam.

5. The etching method according to claim 4, wherein The optical module further includes a reflection unit; after receiving the Gaussian beam corrected and filtered by the optical path correction unit through the shaping unit and shaping the Gaussian beam into a square flat-top beam, it further includes: Change the propagation direction of the square flat-top beam through the reflection unit so that the square flat-top beam is perpendicular to the Gaussian beam.

6. The etching method according to claim 1, wherein, The optical module further includes a focusing unit; determining the preset focal position by adjusting the focal length of the optical module includes: Focus the square flat-top beam into a preset spot size through the focusing unit; Determine the preset focal position by adjusting the focal length of the focusing unit.

7. The etching method according to claim 6, wherein Controlling the battery to be etched and the square flat-top beam to a relative position, and controlling the battery to be etched and the square flat-top beam to move relative to each other in the first direction and / or the second direction includes: Control the battery to be etched to the position of the square flat-top beam through a vacuum adsorption platform; The electromagnetic motion unit moves in the first direction, and controls the focusing unit to move in the second direction on one side of the battery to be etched according to a preset step distance, and divides the battery to be etched into sub-battery units.

8. The etching method according to claim 7, wherein The electromagnetic motion unit moves in the first direction, and controls the focusing unit to move in the second direction on one side of the battery to be etched according to a preset step distance, and divides the battery to be etched into sub-battery units, including: Obtain a positioning reference line through a vision positioning unit and transmit it to the control module; The control module controls the electromagnetic motion unit to move in the first direction; The control module also sets a compensation amount according to the positioning reference line to control the focusing unit to move in the second direction on one side of the battery to be etched according to a preset step distance, and divides the battery to be etched into sub-battery units.

9. The etching method according to claim 1, wherein Before adjusting the preset focusing position of the square flat-top beam, it further includes: Adjust the laser frequency and the processing line speed according to the current spot size to obtain a preset spot overlap rate.

10. The etching method according to claim 1, wherein The perovskite functional layer includes a first transport layer, a first passivation and modification layer, a perovskite absorption layer, a second transport layer, and a second passivation and modification layer arranged in layers; or, The perovskite functional layer includes a first transport layer, a perovskite absorption layer, and a second transport layer arranged in layers.

11. The etching method according to claim 1, characterized in that, The etched groove is the third groove of the perovskite component; the perovskite component is provided with a plurality of first grooves, a plurality of second grooves, and a plurality of third grooves along the first direction; the depth of the third groove is greater than or equal to the thickness of the top electrode and less than the thickness of the top electrode and the perovskite functional layer.

12. An etching device, characterized in that, Implement the etching method according to any one of claims 1-11, and the etching device includes: An optical module for shaping a Gaussian beam into a square flat-top beam; An adjustment module for adjusting the preset focusing position of the square flat-top beam; A motion module, configured to control the battery to be etched and the square flat-top light beam to a relative position, and control the relative movement of the battery to be etched and the square flat-top light beam in a first direction and / or a second direction, where the first direction is different from the second direction; An etching module, configured to etch the battery to be etched according to the preset focusing position, such that the depth of the etched groove is greater than or equal to the thickness of the top electrode and less than the sum of the thicknesses of the top electrode and the perovskite functional layer.

13. A perovskite component, characterized in that, Formed by using the etching method according to any one of claims 1-11; the perovskite component includes a plurality of battery units; the battery unit includes a bottom electrode layer, a perovskite functional layer, and a top electrode layer that are sequentially stacked; The perovskite component is provided with a plurality of first grooves, a plurality of second grooves, and a plurality of third grooves in a first direction; the perovskite component is divided into a plurality of the battery units that are sequentially connected in series through the plurality of first grooves, the plurality of second grooves, and the plurality of third grooves; The first groove penetrates the bottom electrode layer; the second groove penetrates the perovskite functional layer; the third groove penetrates the top electrode layer.

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